Semiconductor Devices

Abstract

This semiconductor apparatus is provided with a semiconductor element, a conducting member, and a connecting member. The semiconductor element has a back surface on which a first electrode is formed, and a major surface on which a second electrode and a third electrode are formed. The back surface and the major surface are spaced apart from each other in a z-direction. In accordance with a drive signal input to the third electrode, on-off control is performed between the first electrode and the second electrode. The conducting member has a first bonding surface and a second bonding surface, each facing the same direction as the back surface. The first bonding surface has the third electrode bonded thereto. The second bonding surface has the connecting member bonded thereto, and is disposed so as not to overlap the semiconductor element when viewed in the z-direction.

Description

[Technical Field]

[0001] The present disclosure relates to semiconductor devices. [Background technology]

[0002] Patent Document 1 discloses an example of a conventional semiconductor device. The semiconductor device described in this document includes a semiconductor element, a chip mounting portion (tab), a metal clip, a wire, and multiple leads. In this semiconductor device, the semiconductor element is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). The semiconductor element has a drain electrode, a source electrode, and a gate electrode. The drain electrode and the source electrode of the semiconductor element are turned on and off in response to a drive signal input to the gate electrode. A source electrode and a gate electrode are formed on the front surface of the semiconductor element, and a drain electrode is formed on the back surface. The drain electrode is electrically connected to the chip mounting portion when the semiconductor element is bonded to the chip mounting portion. The chip mounting portion is formed integrally with one of the multiple leads. The source electrode is electrically connected to one of the multiple leads via a metal clip. The gate electrode is electrically connected to one of the multiple leads via a wire. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2014-82384 Summary of the Invention [Problem to be solved by the invention]

[0004] When the above-described conventional semiconductor element is mounted on a support member by flip-chip bonding or the like, the surface faces downward. As a result, the gate electrode faces downward, making it difficult to directly bond a wire to the gate electrode. As such, there is still room for improvement in wiring in conventional semiconductor devices.

[0005] In view of the above circumstances, one objective of the present disclosure is to provide a semiconductor device that makes it easy to wire to an electrode (for example, an input electrode for a drive signal) even when the electrode faces downward. [Means for solving the problem]

[0006] The semiconductor device disclosed herein includes a first semiconductor element having a first electrode, a second electrode, and a third electrode, the first electrode and the second electrode being on / off controlled in response to a first drive signal input to the third electrode, a first conductive member bonded to the third electrode, and a first connecting member bonded to the first conductive member. The first semiconductor element has a first main surface and a first back surface spaced apart in a thickness direction of the first semiconductor element. The second electrode and the third electrode are formed on the first main surface, and the first electrode is formed on the first back surface. The first conductive member has a first bonding surface and a second bonding surface that are spaced apart from each other and face the same direction as the first back surface in the thickness direction, and a concave surface recessed in the thickness direction relative to the first bonding surface and the second bonding surface. The third electrode is bonded to the first bonding surface, and the first connecting member is bonded to the second bonding surface, and the second bonding surface is positioned so as not to overlap the first semiconductor element when viewed in the thickness direction. [Effects of the Invention]

[0007] According to the above-described configuration, it is possible to easily wire the drive signal that controls the on / off of the semiconductor element to the input electrode in the semiconductor device. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a perspective view showing a semiconductor device according to a first embodiment. [Figure 2] FIG. 1 is a plan view showing a semiconductor device according to a first embodiment. [Figure 3] FIG. 1 is a plan view showing a semiconductor device according to a first embodiment. [Figure 4]FIG. 1 is a plan view showing a semiconductor device according to a first embodiment. [Figure 5] FIG. 1 is a plan view showing a semiconductor device according to a first embodiment. [Figure 6] FIG. 1 is a plan view showing a semiconductor device according to a first embodiment. [Figure 7] FIG. 1 is a plan view showing a semiconductor device according to a first embodiment. [Figure 8] FIG. 1 is a left side view showing a semiconductor device according to a first embodiment. [Figure 9] FIG. 1 is a right side view showing a semiconductor device according to a first embodiment. [Figure 10] FIG. 2 is a bottom view showing the semiconductor device according to the first embodiment. [Figure 11] FIG. 1 is a cross-sectional view taken along line XI-XI in FIG. [Figure 12] FIG. 3 is a cross-sectional view taken along line XII-XII in FIG. 2. [Figure 13] FIG. 3 is a cross-sectional view taken along line XIII-XIII in FIG. 2. [Figure 14] FIG. 2 is a perspective view showing a wiring member of the semiconductor device according to the first embodiment. [Figure 15] FIG. 10 is a cross-sectional view showing a semiconductor device according to a second embodiment. [Figure 16] FIG. 10 is a cross-sectional view showing a semiconductor device according to a third embodiment. [Figure 17] FIG. 10 is a cross-sectional view showing a semiconductor device according to a fourth embodiment. [Figure 18] FIG. 10 is a plan view showing a semiconductor device according to a fifth embodiment. [Figure 19] FIG. 10 is a plan view showing a semiconductor device according to a fifth embodiment. [Figure 20] FIG. 10 is a plan view showing a semiconductor device according to a sixth embodiment. [Figure 21] FIG. 21 is a cross-sectional view taken along line XXI-XXI in FIG. 20. [Figure 22] FIG. 10 is a plan view showing a semiconductor device according to a modified example. DETAILED DESCRIPTION OF THE INVENTION

[0009] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the semiconductor device of the present disclosure will be described below with reference to the accompanying drawings. In the following, identical or similar elements will be designated by the same reference numerals, and redundant description will be omitted where appropriate.

[0010] 1 to 14 show a semiconductor device A1 according to a first embodiment. The semiconductor device A1 includes a first semiconductor element 1, a second semiconductor element 2, a plurality of leads 3, a wiring member 4, a plurality of connecting members 5, and a sealing member 6. In the semiconductor device A1, the plurality of leads 3 include a first lead 31, a second lead 32, a third lead 33, a fourth lead 34, a fifth lead 35, and a sixth lead 36, and the plurality of connecting members 5 include a first connecting member 51, a second connecting member 52, a third connecting member 53, and a fourth connecting member 54.

[0011] FIG. 1 is a perspective view showing the semiconductor device A1, with the sealing member 6 indicated by an imaginary line (two-dot chain line). FIG. 2 is a plan view showing the semiconductor device A1, with the sealing member 6 indicated by an imaginary line. FIG. 3 is a diagram showing the plan view of FIG. 2, further illustrating the second connection member 52 by an imaginary line. FIG. 4 is a diagram showing the first semiconductor element 1 by an imaginary line, with the second connection member 52 omitted from the plan view of FIG. 3. FIG. 5 is a diagram showing the first semiconductor element 1 by an imaginary line, with the wiring member 4 omitted from the plan view of FIG. 4. FIG. 6 is a diagram showing the third connection member 53 by an imaginary line, with the wiring member 4 omitted from the plan view of FIG. 5. FIG. 7 is a diagram showing the second semiconductor element 2 by an imaginary line, with the third connection member 53 omitted from the plan view of FIG. 6. FIG. 8 is a left side view showing the semiconductor device A1. FIG. 9 is a right side view showing the semiconductor device A1. FIG. 10 is a bottom view showing the semiconductor device A1. Fig. 11 is a cross-sectional view taken along line XI-XI in Fig. 2. Fig. 12 is a cross-sectional view taken along line XII-XII in Fig. 2. Fig. 13 is a cross-sectional view taken along line XIII-XIII in Fig. 2. Fig. 14 is a perspective view showing the wiring member 4, in which a part of the wiring member 4 (a resin member 43 described later) is shown by an imaginary line.

[0012] For convenience of explanation, three mutually orthogonal directions, namely, x-direction, y-direction, and z-direction, will be referred to as appropriate. The z-direction corresponds to the thickness direction of the semiconductor device A1, for example.

[0013] The first semiconductor element 1 and the second semiconductor element 2 are each, for example, a MOSFET. Alternatively, the first semiconductor element 1 and the second semiconductor element 2 may each be a field-effect transistor, such as a metal-insulator-semiconductor field-effect transistor (MISFET) or a high-electron mobility transistor (HEMT), or a bipolar transistor, such as an IGBT. The first semiconductor element 1 and the second semiconductor element 2 are each, for example, made of silicon carbide (SiC). Alternatively, the first semiconductor element 1 and the second semiconductor element 2 may each be made of silicon (Si), gallium arsenide (GaAs), or gallium nitride (GaN). The first semiconductor element 1 and the second semiconductor element 2 are, for example, rectangular when viewed in the z direction (i.e., in a plan view). As shown in FIGS. 3, 6, 12, and 13, the first semiconductor element 1 is smaller in size than the second semiconductor element 2 in a plan view. Furthermore, in a plan view, the first semiconductor element 1 entirely overlaps the second semiconductor element 2.

[0014] 12 and 13, the first semiconductor element 1 has a first main surface 101 and a first back surface 102. The first main surface 101 and the first back surface 102 are spaced apart from each other in the z direction. In the semiconductor device A1, the first semiconductor element 1 is disposed with the first main surface 101 facing the z1 direction and the first back surface 102 facing the z2 direction.

[0015] As shown in FIGS. 12 and 13 , the first semiconductor element 1 has a first electrode 11, a second electrode 12, and a third electrode 13. The first electrode 11 is formed on a first back surface 102, and the second electrode 12 and the third electrode 13 are formed on a first main surface 101. In an example in which the first semiconductor element 1 is a MOSFET, the first electrode 11 is a drain electrode, the second electrode 12 is a source electrode, and the third electrode 13 is a gate electrode. In the first semiconductor element 1, a first drive signal (e.g., a gate voltage) is input to the third electrode 13 (gate electrode), and on / off control is performed between the first electrode 11 (drain electrode) and the second electrode 12 (source electrode). That is, when a first drive signal (e.g., a gate voltage) is input to the third electrode 13 (gate electrode), the first semiconductor element 1 switches between a conductive state and a cutoff state in response to the first drive signal. This operation of switching between a conductive state and a cutoff state is called a switching operation. In the conductive state, a current flows from the first electrode 11 (drain electrode) to the second electrode 12 (source electrode), and in the cut-off state, this current does not flow.

[0016] 11 to 13, the second semiconductor element 2 has a second main surface 201 and a second back surface 202. The second main surface 201 and the second back surface 202 are spaced apart from each other in the z direction. In the semiconductor device A1, the second semiconductor element 2 is disposed with the second main surface 201 facing the z1 direction and the second back surface 202 facing the z2 direction.

[0017] As shown in FIGS. 11 to 13 , the second semiconductor element 2 has a fourth electrode 21, a fifth electrode 22, and a sixth electrode 23. The fourth electrode 21 is formed on the second back surface 202, and the fifth electrode 22 and the sixth electrode 23 are formed on the second main surface 201. In an example in which the second semiconductor element 2 is a MOSFET, the fourth electrode 21 is a drain electrode, the fifth electrode 22 is a source electrode, and the sixth electrode 23 is a gate electrode. A second drive signal (e.g., a gate voltage) is input to the sixth electrode 23 (gate electrode) of the second semiconductor element 2, and on / off control is performed between the fourth electrode 21 (drain electrode) and the fifth electrode 22 (source electrode). In other words, when a second drive signal (e.g., a gate voltage) is input to the sixth electrode 23 (gate electrode), the second semiconductor element 2 switches between a conductive state and a cut-off state in response to this second drive signal. In the conductive state, a current flows from the fourth electrode 21 (drain electrode) to the fifth electrode 22 (source electrode), and in the cut-off state, this current does not flow.

[0018] The semiconductor device A1 converts a DC voltage into, for example, an AC voltage through the switching operations of the first semiconductor element 1 and the second semiconductor element 2. In the semiconductor device A1, the DC voltage is input between the second lead 32 and the third lead 33, and the AC voltage is output from the fifth lead 35. The paths of the current generated by this DC voltage and the current generated by the AC voltage are the main current paths in the semiconductor device A1. The semiconductor device A1 is configured as, for example, a half-bridge switching circuit. In this case, the first semiconductor element 1 forms the upper arm circuit of the semiconductor device A1, and the second semiconductor element 2 forms the lower arm circuit of the semiconductor device A1. The first semiconductor element 1 and the second semiconductor element 2 are connected in series to form a bridge.

[0019] The leads 3 support the first semiconductor element 1 and the second semiconductor element 2 and are electrically connected to the first semiconductor element 1 and the second semiconductor element 2. As shown in FIGS. 11 to 13, the leads 3 are located on the opposite side of the second semiconductor element 2 from the first semiconductor element 1 in the z direction (the z1 direction side). The leads 3 are made of a conductive material and are formed, for example, using a lead frame. The leads 3 are formed, for example, by subjecting a metal plate material such as Cu or a Cu alloy to cutting processes such as punching and bending. As shown in FIGS. 8 to 10, the leads 3 are partially exposed from the sealing member 6, and these exposed portions are used as terminals of the semiconductor device A1. As described above, the leads 3 include a first lead 31, a second lead 32, a third lead 33, a fourth lead 34, a fifth lead 35, and a sixth lead 36. The first lead 31, the second lead 32, the third lead 33, the fourth lead 34, the fifth lead 35 and the sixth lead 36 are spaced apart from one another.

[0020] The first lead 31 is electrically connected to the third electrode 13 (gate electrode) of the first semiconductor element 1. As shown in Figures 8 and 10, a portion of the first lead 31 is exposed from the sealing member 6. This exposed portion is a terminal of the semiconductor device A1, and in the semiconductor device A1, the first lead 31 is an input terminal for a first drive signal.

[0021] The second lead 32 is electrically connected to the first electrode 11 (drain electrode) of the first semiconductor element 1. As shown in Figures 8 and 10, a portion of the second lead 32 is exposed from the sealing member 6. This exposed portion is a terminal of the semiconductor device A1, and in the semiconductor device A1, the second lead 32 is a positive input terminal (P terminal).

[0022] The third lead 33 is electrically connected to the fifth electrode 22 (source electrode) of the second semiconductor element 2. As shown in FIG. 10, a portion of the third lead 33 is exposed from the sealing member 6. This exposed portion is a terminal of the semiconductor device A1, and in the semiconductor device A1, the third lead 33 is a negative input terminal (N terminal). As shown in FIGS. 11 to 13, the fifth electrode 22 of the second semiconductor element 2 is joined to the third lead 33 via a conductive bonding material 922, and the second semiconductor element 2 is mounted thereon. The conductive bonding material 922 is made of, for example, solder, metal paste, or sintered metal, and is omitted as appropriate from FIGS. 1 to 7.

[0023] 7, the third lead 33 includes a pad portion 331 and a plurality of hanging portions 332. As shown in FIGS. 11 to 13, the pad portion 331 is a portion of the third lead 33 to which the fifth electrode 22 of the second semiconductor element 2 is joined by a conductive bonding material 922. The plurality of hanging portions 332 are portions that support the pad portion 331 when the plurality of leads 3 are in a lead frame state during the manufacture of the semiconductor device A1. The surface of each of the plurality of hanging portions 332 opposite to the portion connected to the pad portion 331 in the y direction is exposed from the sealing member 6.

[0024] The fourth lead 34 is electrically connected to the sixth electrode 23 (gate electrode) of the second semiconductor element 2. As shown in Figures 9 and 10, a portion of the fourth lead 34 is exposed from the sealing member 6. This exposed portion is a terminal of the semiconductor device A1, and in the semiconductor device A1, the fourth lead 34 is an input terminal for the second drive signal.

[0025] 7, the fourth lead 34 includes a pad portion 341. The pad portion 341 is a portion of the fourth lead 34 to which the sixth electrode 23 of the second semiconductor element 2 is bonded. As shown in FIG. 11, the sixth electrode 23 is bonded to the pad portion 341 by a conductive bonding material 923. The conductive bonding material 923 is made of, for example, solder, metal paste, or sintered metal.

[0026] The fifth lead 35 is electrically connected to the second electrode 12 (source electrode) of the first semiconductor element 1, and is also electrically connected to the fourth electrode 21 (drain electrode) of the second semiconductor element 2. As shown in Figures 9 and 10, a portion of the fifth lead 35 is exposed from the sealing member 6. This exposed portion is a terminal of the semiconductor device A1, and in the semiconductor device A1, the fifth lead 35 is an output terminal for AC voltage.

[0027] The sixth lead 36 is electrically connected to the fourth electrode 21 (drain electrode) of the second semiconductor element 2. As shown in Figures 8 and 10, a portion of the sixth lead 36 is exposed from the sealing member 6. This exposed portion is a terminal of the semiconductor device A1, and in the semiconductor device A1, the sixth lead 36 is a terminal for detecting the output voltage.

[0028] 7, in the semiconductor device A1, the third lead 33 is located at the center (or approximately the center) of the semiconductor device A1 in the x direction and is connected in the y direction. The first lead 31, the second lead 32, and the sixth lead 36 are located on one side of the third lead 33 in the x direction (the x1 direction side), and the fourth lead 34 and the fifth lead 35 are located on the other side of the third lead 33 in the x direction (the x2 direction side). The first lead 31, the second lead 32, and the sixth lead 36 are aligned in the y direction, and the first lead 31 is sandwiched between the second lead 32 and the sixth lead 36 in the y direction. The second lead 32 is located on one side of the first lead 31 in the y direction (the y2 direction side). The fourth lead 34 is located on the other side of the y direction (the y1 direction side) of the fifth lead 35 in the y direction. The sixth lead 36 overlaps the fourth lead 34 when viewed in the x direction, and the first lead 31 and the second lead 32 each overlap the fifth lead 35 when viewed in the x direction. The shape and arrangement of each lead 3 (the first lead 31, the second lead 32, the third lead 33, the fourth lead 34, the fifth lead 35, and the sixth lead 36) are not limited to the example shown in the figures.

[0029] 11 to 13, the wiring member 4 is located between the first semiconductor element 1 and the second semiconductor element 2 in the z direction. As shown in FIG. 4 and FIGS. 11 to 14, the wiring member 4 has a first conductive member 41, a second conductive member 42, and a resin member 43.

[0030] The first conductive member 41 is made of a conductive material, such as Cu or a Cu alloy. As shown in FIGS. 4 and 11 to 13, the first conductive member 41 has a first bonding surface 411, a second bonding surface 412, a concave surface 413, and a covered surface 414.

[0031] As shown in FIG. 13 , the first bonding surface 411 and the second bonding surface 412 face in the z2 direction. That is, the first bonding surface 411 and the second bonding surface 412 face in the same direction as the first back surface 102 and the second back surface 202 in the z direction. As shown in FIG. 4 , in a plan view, the first bonding surface 411 overlaps the first semiconductor element 1, and the second bonding surface 412 does not overlap the first semiconductor element 1. Furthermore, in a plan view, the first bonding surface 411 does not overlap the second connecting member 52. As shown in FIG. 13 , the third electrode 13 of the first semiconductor element 1 is bonded to the first bonding surface 411 by a conductive bonding material 913. The conductive bonding material 913 is made of, for example, solder, metal paste, or sintered metal. As shown in FIG. 11 , the first connecting member 51 is bonded to the second bonding surface 412. In the semiconductor device A1, the first bonding surface 411 and the second bonding surface 412 are located on the same plane perpendicular to the z direction, and are spaced apart from each other along the y direction.

[0032] 13 and 14, the concave surface 413 is sandwiched between the first bonding surface 411 and the second bonding surface 412 in a plan view, and is recessed in the z direction relative to the first bonding surface 411 and the second bonding surface 412. In the example shown in FIGS. 13 and 14, the concave surface 413 is defined by a plurality of flat surfaces (for example, a bottom surface and a pair of side surfaces), but it may also be curved as a whole (for example, one of the three surfaces may be curved, or two or three surfaces may each be curved). A resin member 43 is formed in the portion recessed by the concave surface 413.

[0033] 13, the coated surface 414 is covered with the resin member 43. The coated surface 414 faces the z1 direction. That is, the coated surface 414 faces the opposite side to the first bonding surface 411 and the second bonding surface 412 in the z direction.

[0034] The second conductive member 42 is made of a conductive material. This conductive material is, for example, Cu or a Cu alloy, similar to the first conductive member 41. The second conductive member 42 is spaced apart from the first conductive member 41 and is insulated from the first conductive member 41. The second conductive member 42 is sandwiched between the first semiconductor element 1 and the second semiconductor element 2 in the z direction.

[0035] As shown in FIGS. 12 and 13 , the second conductive member 42 has a first top surface 421 and a second top surface 422. The first top surface 421 and the second top surface 422 are spaced apart in the z direction. The first top surface 421 faces the z1 direction, and the second top surface 422 faces the z2 direction. As shown in FIGS. 12 and 13 , the first top surface 421 is bonded to the third connection member 53 by a conductive bonding material 94. The conductive bonding material 94 is made of, for example, solder, metal paste, or sintered metal. As shown in FIGS. 12 and 13 , the second top surface 422 is bonded to the second electrode 12 of the first semiconductor element 1 by a conductive bonding material 912. The conductive bonding material 912 is made of, for example, solder, metal paste, or sintered metal. In the semiconductor device A1, the second top surface 422 is located on the same plane as the first bonding surface 411 and the second bonding surface 412, which is perpendicular to the z direction.

[0036] As shown in FIGS. 11 to 14, the resin member 43 partially covers the first conductive member 41 and the second conductive member 42. In the wiring member 4, the first bonding surface 411 and the second bonding surface 412 of the first conductive member 41 and the first top surface 421 and the second top surface 422 of the second conductive member 42 are exposed from the resin member 43. The resin member 43 is made of, for example, an insulating resin material. This resin material is, for example, epoxy resin. Alternatively, the constituent material of the resin member 43 may be glass epoxy resin.

[0037] Each of the plurality of connection members 5 electrically connects two or more parts spaced apart from one another. As described above, the plurality of connection members 5 include the first connection member 51, the second connection member 52, the third connection member 53, and the fourth connection member 54.

[0038] The first connection member 51 electrically connects the first conductive member 41 of the wiring member 4 and the first lead 31. The first connection member 51 is, for example, a bonding wire. Alternatively, the first connection member 51 may be a bonding ribbon or a metal plate. The first connection member 51 is made of, for example, Au or an Au alloy, Cu or a Cu alloy, or Al or an Al alloy. As shown in FIG. 11 , one end of the first connection member 51 is joined to the second bonding surface 412 of the first conductive member 41, and the other end is joined to the upper surface of the first lead 31.

[0039] The second connection member 52 electrically connects the first electrode 11 of the first semiconductor element 1 and the second lead 32. The second connection member 52 is, for example, a metal plate (also called a metal clip). The second connection member 52 is made of, for example, Cu or a Cu alloy. The second connection member 52 serves as the main current path in the semiconductor device A1. For this reason, a metal plate is more suitable for large currents and high voltages than a bonding wire.

[0040] The second connection member 52 includes two joint portions 521 and 522 and a linking portion 523. As shown in FIG. 12, the joint portion 521 is bonded onto the first electrode 11 via a conductive bonding material 911. The conductive bonding material 911 is made of, for example, solder, metal paste, or sintered metal. As shown in FIG. 12, the joint portion 522 is bonded onto the second lead 32 via a conductive bonding material 952. The conductive bonding material 952 is made of, for example, solder, metal paste, or sintered metal. The linking portion 523 is connected to and links the two joint portions 521 and 522. The two joint portions 521 and 522 are electrically connected via the linking portion 523.

[0041] The third connection member 53 electrically connects the second conductive member 42 of the wiring member 4 and the fourth electrode 21 (drain electrode) of the second semiconductor element 2, and also electrically connects them to the fifth lead 35. The third connection member 53 is, for example, a metal plate (also referred to as a metal clip). The third connection member 53 is made of, for example, Cu or a Cu alloy. The third connection member 53 serves as the main current path in the semiconductor device A1. For this reason, a metal plate is more suitable for large currents and high voltages than a bonding wire. The third connection member 53 includes an intervening portion 531, a joint portion 532, and a linking portion 533.

[0042] As shown in FIGS. 11 to 13 , the intervening portion 531 is sandwiched between the second conductive member 42 and the fourth electrode 21 in the z direction and is electrically connected to the second conductive member 42 and the fourth electrode 21. The intervening portion 531 is bonded onto the fourth electrode 21 by a conductive bonding material 921. The conductive bonding material 921 is made of, for example, solder, metal paste, or sintered metal. The second conductive member 42 is bonded onto the intervening portion 531 by the conductive bonding material 94. For example, as shown in FIG. 1 (also see FIGS. 2 to 5 ), one end of the fourth connecting member 54 is bonded to a portion of the intervening portion 531 (part of the third connecting member 53). This bonded portion does not overlap any of the first semiconductor element 1, the wiring member 4, and the second connecting member 52 in a plan view.

[0043] 12, the joint portion 532 is joined onto the fifth lead 35 by a conductive bonding material 953. The joint portion 532 is electrically connected to the fifth lead 35 via the conductive bonding material 953. The conductive bonding material 953 is made of, for example, solder, metal paste, or sintered metal.

[0044] 5, 6, and 12, the connecting portion 533 is connected to and connects the intervening portion 531 and the joint portion 532. The intervening portion 531 and the joint portion 532 are electrically connected via the connecting portion 533.

[0045] The fourth connection member 54 electrically connects the third connection member 53 and the sixth lead 36. The fourth connection member 54 is, for example, a bonding wire. Alternatively, the fourth connection member 54 may be a bonding ribbon or a metal plate. The fourth connection member 54 is made of, for example, Au or an Au alloy, Al or an Al alloy, or Cu or a Cu alloy. One end of the fourth connection member 54 is joined to the interposed portion 531 of the third connection member 53, and the other end is joined to the upper surface of the sixth lead 36.

[0046] As shown in FIGS. 11 to 13, the sealing member 6 covers the first semiconductor element 1, the second semiconductor element 2, and portions of the leads 3, as well as the wiring member 4 and the connecting members 5. The sealing member 6 is made of, for example, an insulating resin material. The resin material may be, for example, the same epoxy resin as that used for the resin member 43. As shown in FIGS. 2 to 13, the sealing member 6 has a resin main surface 61, a resin back surface 62, and multiple resin side surfaces 631 to 634.

[0047] As shown in FIGS. 8, 9, and 11 to 13, the resin main surface 61 and the resin back surface 62 are spaced apart in the z direction. The resin main surface 61 faces the z2 direction, and the resin back surface 62 faces the z1 direction. Each of the multiple resin side surfaces 631 to 634 is sandwiched between the resin main surface 61 and the resin back surface 62 in the z direction and is connected to the resin main surface 61 and the resin back surface 62. The resin side surface 631 and the resin side surface 632 are spaced apart in the x direction. The resin side surface 631 faces the x1 direction, and the resin side surface 632 faces the x2 direction. The resin side surface 633 and the resin side surface 634 are spaced apart in the y direction. The resin side surface 633 faces the y1 direction, and the resin side surface 634 faces the y2 direction. A portion of each of the multiple leads 3 is exposed from the resin back surface 62. Furthermore, from the resin side surface 631, a portion of each of the first lead 31, the second lead 32, and the third lead 33 is exposed, and from the resin side surface 632, a portion of each of the fourth lead 34 and the fifth lead 35 is exposed.

[0048] The semiconductor device A1 has the following advantages.

[0049] The semiconductor device A1 includes a first semiconductor element 1 and a first conductive member 41. The first semiconductor element 1 has a first electrode 11, a second electrode 12, and a third electrode 13. A first drive signal input to the third electrode 13 controls the on / off state between the first electrode 11 and the second electrode 12. In other words, the third electrode 13 is an input electrode for the first drive signal. The first electrode 11 is formed on a first back surface 102 of the first semiconductor element 1, and the second electrode 12 and the third electrode 13 are formed on a first main surface 101. The first conductive member 41 has a first bonding surface 411 and a second bonding surface 412. The first bonding surface 411 and the second bonding surface 412 face the same direction on the first back surface 102. The first bonding surface 411 is bonded to the third electrode 13, and the second bonding surface 412 does not overlap the first semiconductor element 1 in a plan view. With this configuration, the second bonding surface 412 faces upward of the semiconductor device A1 and does not overlap the first semiconductor element 1, facilitating bonding of the first connection member 51 to the second bonding surface 412. Therefore, the semiconductor device A1 can easily provide wiring to the input electrode (third electrode 13) of the drive signal that controls the on / off of the first semiconductor element 1.

[0050] The semiconductor device A1 includes a first semiconductor element 1 and a second semiconductor element 2. In a plan view, the first semiconductor element 1 overlaps the second semiconductor element 2. When the first semiconductor element 1 is stacked on top of the second semiconductor element 2, the third electrode 13 faces the second semiconductor element 2, making it even more difficult to directly bond the first connection member 51 to the third electrode 13. In the semiconductor device A1, in addition to the second semiconductor element 2, the third connection member 53 and the third lead 33 are also disposed below the first semiconductor element 1 (in the z1 direction), making it even more difficult to bond the first connection member 51 to the third electrode 13. However, in the semiconductor device A1, the wiring member 4 (first conductive member 41) causes the second bonding surface 412 to face upward of the semiconductor device A1, making it easier to bond the first connection member 51. That is, the semiconductor device A1 is more effective when the first semiconductor element 1 and the second semiconductor element 2 are mounted in a stacked structure and when the first semiconductor element 1 and the second semiconductor element 2 are flip-chip mounted.

[0051] In the semiconductor device A1, the first conductive member 41 includes a concave surface 413 recessed from the first bonding surface 411 and the second bonding surface 412. With this configuration, the first conductive member 41 is simply conductively bonded to the third electrode 13 of the first semiconductor element 1 via the conductive bonding material 913 at the first bonding surface 411. Therefore, the semiconductor device A1 can prevent unintended conduction between the first conductive member 41 and the first semiconductor element 1. For example, unintended conduction between the first conductive member 41 and the first electrode 11, which is formed on the first main surface 101 like the third electrode 13, can be prevented.

[0052] In the semiconductor device A1, the second semiconductor element 2 is flip-chip mounted, and the fifth electrode 22 (source electrode) is joined to the third lead 33. This configuration makes it possible to improve the dissipation of heat generated by the switching operation of the second semiconductor element 2.

[0053] In the semiconductor device A1, the second bonding surface 412 overlaps the third connection member 53 (intervening portion 531), the second semiconductor element 2, and the third lead 33 (pad portion 331) in a plan view (see FIG. 13 ). With this configuration, when the first connection member 51 is bonded to the second bonding surface 412, a downward pressure force in the z direction is applied to the second bonding surface 412. In response to this, the wiring member 4 is supported by the third connection member 53, the second semiconductor element 2, and the third lead 33, and therefore, displacement of the wiring member 4 and poor bonding of the first connection member 51 due to the pressure force can be suppressed.

[0054] Fig. 15 shows a semiconductor device A2 according to the second embodiment. Fig. 15 is a cross-sectional view showing the semiconductor device A2, and corresponds to the cross section of Fig. 13. As shown in Fig. 15, the semiconductor device A2 differs from the semiconductor device A1 in that a portion of the first semiconductor element 1 is covered with a resin member 43.

[0055] In the semiconductor device A2, the resin member 43 covers the first semiconductor element 1 except for the first back surface 102 of the first semiconductor element 1. In other words, the first back surface 102 is exposed from the resin member 43. The first electrodes 11 of the first semiconductor element 1 are formed on the first back surface 102, and therefore the first electrodes 11 of the first semiconductor element 1 are exposed from the resin member 43.

[0056] 15 , in semiconductor device A2, second bonding surface 412 is located higher (in the z2 direction) than first bonding surface 411, and is located on the same plane as first back surface 102 of first semiconductor element 1. As a result, even when resin member 43 partially covers first semiconductor element 1, second bonding surface 412 is exposed from resin member 43.

[0057] In the semiconductor device A2, the first semiconductor element 1 is formed integrally with the wiring member 4 in advance during the manufacture of the semiconductor device A2. For example, after the first conductive member 41 is joined to the third electrode 13 of the first semiconductor element 1 and the second conductive member 42 is joined to the second electrode 12 of the first semiconductor element 1, the first semiconductor element 1, the first conductive member 41, and the second conductive member 42 are covered with the resin member 43. This forms the wiring member 4 integrated with the first semiconductor element 1. In this way, the wiring member 4 integrated with the first semiconductor element 1 is formed in advance, and the semiconductor device A2 is manufactured.

[0058] The semiconductor device A2 can also achieve the same effects as the semiconductor device A1.

[0059] Fig. 16 shows a semiconductor device A3 according to the third embodiment. Fig. 16 is a cross-sectional view showing the semiconductor device A3, corresponding to the cross-section of Fig. 13. As shown in Fig. 16, the semiconductor device A3 differs from the semiconductor device A1 in that the wiring member 4 does not include the second conductive member 42, and the intervening portion 531 of the third connection member 53 includes a first portion 531a and a second portion 531b.

[0060] 16, the first portion 531a has a larger dimension in the x direction than the second portion 531b. That is, the first portion 531a is thicker than the second portion 531b. The second electrode 12 is bonded to the upper surface of the first portion 531a via a conductive bonding material 912. The first portion 531a is disposed in the same (or substantially the same) position as the second conduction member 42 of the semiconductor device A1 in a plan view. The wiring member 4 is bonded to the upper surface of the second portion 531b via a conductive bonding material 94. The upper surfaces of the first portion 531a and the wiring member 4 are disposed in the same (or substantially the same) position in the z direction.

[0061] The semiconductor device A3 can also achieve the same effects as the semiconductor device A1.

[0062] Fig. 17 shows a semiconductor device A4 according to the fourth embodiment. Fig. 17 is a cross-sectional view showing the semiconductor device A4, corresponding to the cross-section of Fig. 13. As shown in Fig. 17, the semiconductor device A4 differs from the semiconductor device A3 in that the wiring member 4 does not include a resin member 43. Note that, as shown in Fig. 17, the intervening portion 531 of the third connecting member 53 includes a first portion 531a and a second portion 531b, similar to the intervening portion 531 of the semiconductor device A2.

[0063] In the semiconductor device A3, the wiring member 4 is composed only of a first conductive member 41. The first conductive member 41 is covered with the sealing member 6. Therefore, the covered surface 414 in the semiconductor device A3 is covered with the sealing member 6. In the semiconductor device A3, before the first semiconductor element 1 is mounted on the first portion 531a (intervening portion 531), the first conductive member 41 is joined to the third electrode 13 of the first semiconductor element 1, so that the first conductive member 41 is supported in a position spaced apart from the third connection member 53.

[0064] The semiconductor device A4 can also achieve the same effects as the semiconductor device A1.

[0065] 18 and 19 show a semiconductor device A5 according to the fifth embodiment. FIGS. 18 and 19 are plan views showing the semiconductor device A5. In FIG. 18, the sealing member 6 is shown by imaginary lines, and in FIG. 19, the second connection member 52 is omitted and the first semiconductor element 1 and the sealing member 6 are shown by imaginary lines. As shown in FIGS. 18 and 19, the semiconductor device A5 differs from the semiconductor device A1 in that the first bonding surface 411 and the second bonding surface 412 of the first conductive member 41 are spaced apart from each other along the x direction.

[0066] In semiconductor device A5, as described above, second bonding surface 412 is located on one side in the x direction (x1 direction side) of first bonding surface 411. In this way, second bonding surface 412 does not overlap first semiconductor element 1 and second connecting member 52 in a plan view.

[0067] The semiconductor device A5 can also achieve the same effects as the semiconductor device A1.

[0068] 20 and 21 show a semiconductor device A6 according to the sixth embodiment. FIG. 20 is a plan view showing the semiconductor device A6, with the second connection member 52 and the sealing member 6 indicated by imaginary lines. FIG. 21 is a cross-sectional view taken along line XXI-XXI in FIG. 20. As shown in FIGS. 20 and 21, the semiconductor device A6 differs from the semiconductor device A5 in that the planar size of the first semiconductor element 1 and the planar size of the second semiconductor element 2 are the same (or substantially the same). Note that, like the semiconductor device A5, the semiconductor device A6 uses a first conductive member 41 in which the first bonding surface 411 and the second bonding surface 412 are arranged along the y direction.

[0069] In the semiconductor device A6, as described above, the planar size of the first semiconductor element 1 and the planar size of the second semiconductor element 2 are the same (or approximately the same). In the example shown in Figures 20 and 21, the first semiconductor element 1 is positioned slightly shifted in the x2 direction from the second semiconductor element 2.

[0070] The semiconductor device A6 can also achieve the same effects as the semiconductor device A1.

[0071] In the first to fourth embodiments, the first bonding surface 411 and the second bonding surface 412 are arranged along the y direction, and in the fifth and sixth embodiments, the first bonding surface 411 and the second bonding surface 412 are arranged along the x direction. However, the arrangement of the first bonding surface 411 and the second bonding surface 412 can be changed as appropriate. FIG. 22 is a plan view showing a semiconductor device according to this modification and corresponds to FIG. 19 . The semiconductor device shown in FIG. 22 is the semiconductor device A5 with the second bonding surface 412 changed in position. For example, as shown in FIG. 22 , by bending the concave surface 413 in a plan view, the arrangement of the first bonding surface 411 and the second bonding surface 412 can be changed as appropriate depending on the shape and position of other components.

[0072] In the first to sixth embodiments, the second semiconductor element 2 is a transistor, but the present invention is not limited thereto and may be a diode, an IC, or the like. For example, in an example in which the second semiconductor element 2 is a diode, the second semiconductor element 2 has two electrodes, and these two electrodes may be provided on the second main surface 201 and the second back surface 202, one on each, or on either the second main surface 201 or the second back surface 202. Furthermore, each of the semiconductor devices A1 to A6 may include an electronic component such as a resistor or a capacitor instead of the second semiconductor element 2. Furthermore, each of the semiconductor devices A1 to A6 may not include the second semiconductor element 2. In these modified examples, the arrangement, shape, and number of the multiple leads 3 may be changed as appropriate.

[0073] In the first to sixth embodiments, each of the semiconductor devices A1 to A6 may include, instead of the leads 3, a glass epoxy substrate, a silicon substrate, a ceramic substrate, or the like on which a wiring pattern is formed.

[0074] The semiconductor device according to the present disclosure is not limited to the above-described embodiment. The specific configuration of each part of the semiconductor device according to the present disclosure can be freely modified in various ways. The present disclosure includes the embodiments described in the following appendices. Appendix 1. a first semiconductor element having a first electrode, a second electrode, and a third electrode, and in which the first electrode and the second electrode are turned on and off in response to a first drive signal input to the third electrode; a first conductive member joined to the third electrode; a first connection member joined to the first conductive member; It is equipped with the first semiconductor element has a first main surface and a first back surface spaced apart in a thickness direction of the first semiconductor element; the second electrode and the third electrode are formed on the first main surface, the first electrode is formed on the first rear surface; the first conductive member has a first bonding surface and a second bonding surface that face the same direction as the first back surface in the thickness direction and are spaced apart from each other, and a concave surface that is recessed in the thickness direction with respect to the first bonding surface and the second bonding surface; the third electrode is bonded to the first bonding surface, The second bonding surface is bonded to the first connecting member and does not overlap the first semiconductor element when viewed in the thickness direction. Appendix 2. a plurality of leads arranged in a direction in which the first main surface faces further than the first semiconductor element in the thickness direction; 2. The semiconductor device according to claim 1, wherein the plurality of leads include a first lead to which the first connection member is connected. Appendix 3. a second connection member joined to the first electrode; the plurality of leads includes a second lead to which the second connection member is joined; 3. The semiconductor device according to claim 2, wherein the first electrode and the second lead are electrically connected via the second connection member. Appendix 4. a second semiconductor element having a second main surface facing in the same direction as the first main surface in the thickness direction and a second back surface facing in the same direction as the first back surface, The semiconductor device described in Appendix 3, wherein the plurality of leads include a third lead located on the opposite side of the second semiconductor element from the first semiconductor element in the thickness direction and on which the second semiconductor element is mounted. Appendix 5. the second semiconductor element has a fourth electrode and a fifth electrode, the fourth electrode being formed on the second back surface and the fifth electrode being formed on the second main surface; 5. The semiconductor device according to claim 4, wherein the third lead is joined to the fifth electrode. Appendix 6. the first semiconductor element and the second semiconductor element overlap each other in the thickness direction, 6. The semiconductor device according to claim 5, wherein the second semiconductor element faces the first main surface. Appendix 7. 7. The semiconductor device according to claim 6, wherein the third electrode overlaps the second semiconductor element when viewed in the thickness direction. Appendix 8. The semiconductor device described in Appendix 7, wherein the second semiconductor element has a sixth electrode formed on the second main surface, and the fourth electrode and the fifth electrode are on / off controlled in response to a second drive signal input to the sixth electrode. Appendix 9. 9. The semiconductor device according to claim 8, wherein the plurality of leads includes a fourth lead to which the sixth electrode is joined. Appendix 10. a plate-shaped third connection member that is electrically connected to the second electrode and the fourth electrode; the plurality of leads includes a fifth lead joined to the third connection member; 10. The semiconductor device according to claim 9, wherein the second electrode and the fourth electrode are electrically connected to the fifth lead via the third connecting member. Appendix 11. further comprising an insulating resin member covering the first conductive member; the first conductive member has a coated surface that faces a side opposite to the first bonding surface and the second bonding surface in the thickness direction and is covered with the resin member; 11. The semiconductor device according to claim 10, wherein the second bonding surface is exposed from the resin member. Appendix 12. a second conductive member sandwiched between the first semiconductor element and the second semiconductor element in the thickness direction and insulated from the first conductive member; 12. The semiconductor device according to claim 11, wherein the second electrode and the fourth electrode are electrically connected via the second conductive member. Appendix 13. the third connection member is sandwiched between the second conductive member and the fourth electrode in the thickness direction, 13. The semiconductor device according to claim 12, wherein the second conductive member and the fourth electrode are electrically connected via the third connecting member. Appendix 14. the resin member covers the second conductive member, the second conductive member has a first top surface joined to the third connection member; 14. The semiconductor device according to claim 13, wherein the first top surface is exposed from the resin member. Appendix 15. the second conductive member has a second top surface joined to the second electrode, the second top surface is exposed from the resin member, 15. The semiconductor device according to claim 14, wherein the second top surface and the second bonding surface are located on the same plane perpendicular to the thickness direction. Appendix 16. the resin member covers the first semiconductor element, 15. The semiconductor device according to claim 14, wherein the second bonding surface and the first back surface are located on the same plane perpendicular to the thickness direction. Appendix 17. 17. The semiconductor device according to claim 12, further comprising a sealing member that covers the first semiconductor element, the second semiconductor element, the first conductive member, and the second conductive member. [Explanation of symbols]

[0075] A1 to A6: Semiconductor device 1: First semiconductor element 101: First main surface 102: First back surface 11: 1st electrode 12: 2nd electrode 13: Third electrode 2: Second semiconductor element 201: Second main surface 202: Second back surface 21: 4th electrode 22: 5th electrode 23: 6th electrode 3: Lead 31: 1st lead 32: 2nd lead 33: Third lead 331: Pad section 332: Hanging part 34: 4th lead 341: Pad section 35: 5th lead 36: 6th lead 4: Wiring material 41: First conductive member 411: First bonding surface 412: Second joint surface 413: Concave surface 414: Covering surface 42: Second conductive member 421: 1st top surface 422: 2nd top surface 43: Resin material 5: Connection material 51: First connecting member 52: Second connecting member 521: Joint 522: Joint 523: Connection portion 53: Third connection member 531: Intervening part 531a: Part 1 531b: Part 2 532: Joint part 533: Connection portion 54: Fourth connection member 6: Sealing member 61: Resin main surface 62: Resin back surface 631~634: Resin side surface 911~913,921~923,94,952,953: Conductive bonding material

Claims

1. a first semiconductor element having a first electrode, a second electrode, and a third electrode, and in which the first electrode and the second electrode are turned on and off in response to a first drive signal input to the third electrode; a first conductive member joined to the third electrode; a first connection member joined to the first conductive member; an insulating resin member covering the first conductive member; It is equipped with the first semiconductor element has a first main surface and a first back surface spaced apart in a thickness direction of the first semiconductor element; the second electrode and the third electrode are formed on the first main surface, the first electrode is formed on the first rear surface; the first conductive member has a first bonding surface and a second bonding surface that face the same direction as the first back surface in the thickness direction and are spaced apart from each other, and a concave surface that is recessed in the thickness direction with respect to the first bonding surface and the second bonding surface; the third electrode is bonded to the first bonding surface, the second bonding surface is bonded to the first connection member and does not overlap the first semiconductor element when viewed in the thickness direction; the resin member covers the first semiconductor element, The semiconductor device, wherein the second bonding surface and the first back surface are located on the same plane perpendicular to the thickness direction.

2. a plurality of leads arranged in a direction in which the first main surface faces further than the first semiconductor element in the thickness direction; The semiconductor device according to claim 1 , wherein said plurality of leads includes a first lead to which said first connection member is connected.

3. a second connection member joined to the first electrode; the plurality of leads includes a second lead to which the second connection member is joined; The semiconductor device according to claim 2 , wherein said first electrode and said second lead are electrically connected via said second connecting member.

4. a second semiconductor element having a second main surface facing in the same direction as the first main surface in the thickness direction and a second back surface facing in the same direction as the first back surface, 4. The semiconductor device according to claim 3, wherein the plurality of leads include a third lead located on the opposite side of the second semiconductor element from the first semiconductor element in the thickness direction, and on which the second semiconductor element is mounted.

5. the second semiconductor element has a fourth electrode and a fifth electrode, the fourth electrode being formed on the second back surface and the fifth electrode being formed on the second main surface; The semiconductor device according to claim 4 , wherein said third lead is joined to said fifth electrode.

6. the first semiconductor element and the second semiconductor element overlap each other when viewed in the thickness direction, The semiconductor device according to claim 5 , wherein said second semiconductor element faces said first main surface.

7. The semiconductor device according to claim 6 , wherein the third electrode overlaps the second semiconductor element when viewed in the thickness direction.

8. 8. The semiconductor device according to claim 7, wherein the second semiconductor element has a sixth electrode formed on the second main surface, and the fourth electrode and the fifth electrode are on / off controlled in response to a second drive signal input to the sixth electrode.

9. 9. The semiconductor device according to claim 8, wherein said plurality of leads includes a fourth lead to which said sixth electrode is joined.

10. a plate-shaped third connection member that is electrically connected to the second electrode and the fourth electrode; the plurality of leads includes a fifth lead joined to the third connection member, The semiconductor device according to claim 9 , wherein the second electrode and the fourth electrode are electrically connected to the fifth lead via the third connecting member.

11. The first conductive member has a coated surface facing the opposite side to the first bonding surface and the second bonding surface in the thickness direction and covered with the resin member, The semiconductor device according to claim 10 , wherein the second bonding surface is exposed from the resin member.

12. a second conductive member sandwiched between the first semiconductor element and the second semiconductor element in the thickness direction and insulated from the first conductive member; The semiconductor device according to claim 11 , wherein the second electrode and the fourth electrode are electrically connected via the second conductive member.

13. the third connection member is sandwiched between the second conductive member and the fourth electrode in the thickness direction, The semiconductor device according to claim 12 , wherein the second conductive member and the fourth electrode are electrically connected via the third connecting member.

14. the resin member covers the second conductive member, the second conductive member has a first top surface joined to the third connection member; The semiconductor device according to claim 13 , wherein the first top surface is exposed from the resin member.

15. the second conductive member has a second top surface joined to the second electrode, the second top surface is exposed from the resin member, The semiconductor device according to claim 14 , wherein the second top surface and the second bonding surface are located on the same plane perpendicular to the thickness direction.

16. 16. The semiconductor device according to claim 12, further comprising a sealing member that covers said first semiconductor element, said second semiconductor element, said first conductive member, and said second conductive member.

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