Light-emitting device

Abstract

To provide a flexible device with fewer defects caused by a crack, provide a flexible device with high productivity, and also provide a flexible device with less display failure even in a high temperature and high humidity environment.SOLUTION: A light-emitting device includes a first flexible substrate, a second flexible substrate, a buffer layer, a first crack inhibiting layer, and a light-emitting element. A first surface of the first flexible substrate faces a second surface of the second flexible substrate. The buffer layer and the first crack inhibiting layer are provided over the first surface of the first flexible substrate. The buffer layer overlaps with the first crack inhibiting layer. The light-emitting element is provided over the second surface of the second flexible substrate.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One aspect of the present invention relates to a display device, particularly a flexible display device that displays information along a curved surface. Furthermore, one embodiment of the present invention relates to a light-emitting device. The present invention relates to a light emitting device that is flexible and can emit light along a curved surface.

[0002] Note that one embodiment of the present invention is not limited to the above technical fields. The technical field of one aspect relates to an article, a method, or a manufacturing method. One aspect of the present invention is a process, machine, manufacture, or composition. Therefore, the invention disclosed herein more specifically relates to In one aspect of the technical field, the present invention relates to semiconductor devices, display devices, light-emitting devices, electronic devices, and their driving Examples of the method include a method for operating the device and a method for manufacturing the device. [Background technology]

[0003] In recent years, flexible devices have been developed in which semiconductor elements or light-emitting elements are mounted on flexible substrates. The development of flexible devices is currently underway. A typical example of a flexible device is a lighting device. Examples include image display devices and various semiconductor circuits having semiconductor elements such as transistors. It can be obtained.

[0004] A method for manufacturing a semiconductor device using a flexible substrate includes a method for manufacturing a semiconductor device using a flexible substrate such as a glass substrate or a quartz substrate. After fabricating semiconductor elements such as thin film transistors (TFTs) on a supporting substrate, A technology has been developed to transfer a semiconductor element onto a substrate having a support substrate. Therefore, a step of peeling off the layer including the semiconductor element from the substrate is required.

[0005] For example, Patent Document 1 describes the following peeling technique using laser ablation: A separation layer made of amorphous silicon or the like is provided on the substrate, and a peeled layer is provided on the separation layer. The separation layer is adhered to the transfer body by an adhesive layer. The separation layer is ablated by irradiating it with laser light. By doing so, peeling occurs in the separation layer.

[0006] Furthermore, Patent Document 2 describes the following peeling technique: A metal layer is formed, and the oxide layer and the metal layer are bonded together by taking advantage of the weak bonding at the interface between the oxide layer and the metal layer. The layer to be peeled and the substrate are separated by causing peeling at the interface with the metal layer. [Prior art documents] [Patent documents]

[0007] [Patent Document 1] Japanese Patent Application Publication No. 10-125931 [Patent Document 2] Japanese Patent Application Laid-Open No. 2003-174153 Summary of the Invention [Problem to be solved by the invention]

[0008] A release layer provided on a substrate and a layer to be released (hereinafter also referred to as a buffer layer) formed on the release layer. When peeling is performed between the layer to be peeled and the thin film transistor, the layer formed on the peeling layer is It is a thin film laminate that includes transistors, wiring, interlayer films, etc., and its thickness is only a few μm or less. In addition, when peeling between the peeling layer and the peeled layer, the base that becomes the peeling starting point may be broken. Large bending stress is applied to the edge of the plate, causing film cracks and cracks (hereafter referred to as cracks) in the peeled layer. (also known as) is likely to occur.

[0009] In addition, in order to improve the productivity of flexible light-emitting devices, it is necessary to use a large substrate to manufacture multiple devices. After simultaneously manufacturing a number of light-emitting devices, it is desirable to divide the substrate using a scriber or the like. At this time, the thin film at the edge of the substrate, especially the substrate, is broken due to the stress applied when the substrate is cut. Cracks may occur in the release layer.

[0010] Furthermore, the flexible light-emitting device manufactured through the peeling and cutting steps as described above can be highly When kept in a high temperature and humidity environment, cracks that occur at the edge of the peeled layer during the peeling and separation process As the crack progresses, the signal strength of the light-emitting element in the light-emitting device may decrease. If the crack reaches the light emitting element, some of the light emitting element may not emit light. There is a saying.

[0011] Therefore, one aspect of the present invention is to provide a flexible light-emitting device that reduces defects caused by cracks. Another object of the present invention is to provide a flexible light-emitting device that is excellent in mass productivity. Another object of the present invention is to provide a highly reliable light-emitting device. It shall be one of the following.

[0012] Another object of one embodiment of the present invention is to provide a novel light-emitting device. An object of one embodiment of the present invention is to provide a lightweight light-emitting device. An object of one embodiment of the present invention is to provide a light-emitting device that is less susceptible to damage. An object of one embodiment is to provide a thin light-emitting device.

[0013] Note that one embodiment of the present invention does not necessarily solve all of these problems. The description of these issues does not preclude the existence of other issues. The subject matter will be self-evident from the description, drawings, claims, etc. It is possible to extract other issues from the drawings, claims, etc. [Means for solving the problem]

[0014] One aspect of the present invention is a semiconductor device comprising a first flexible substrate, a second flexible substrate, a first buffer layer, and a first The first surface of the first flexible substrate and the second surface of the second flexible substrate are connected to each other. The first buffer layer and the first crack suppression layer are provided so as to face each other. The first buffer layer and the first crack suppression layer are disposed on the first surface of the flexible substrate. and the light emitting element is a light emitting device provided on the second surface of the second flexible substrate.

[0015] In the light-emitting device, the first buffer layer contains an inorganic material, and the light-emitting element is The first crack prevention layer contains a photosensitive organic compound, and the first crack prevention layer is made of either a conductive material or a resin material. When viewed from a direction perpendicular to the first surface, the light emitting element and the edge of the first flexible substrate are It is preferable that it is located between

[0016] In the light emitting device, a first adhesive is provided between the first flexible substrate and the first buffer layer. a second adhesive layer and a second buffer layer between the second flexible substrate and the light emitting element; It is preferable to have

[0017] In addition, the light emitting device has a layer on the first surface of the first flexible substrate, and the layer includes a marker. It is preferable that the first crack prevention layer has a function as a barrier and contains the same material as the first crack prevention layer.

[0018] In the light-emitting device, a light-shielding layer is provided on the first surface of the first flexible substrate, and the light-shielding layer has a function of blocking light from the light emitting element, and the first crack prevention layer is made of the same material as the light blocking layer. It is preferred that the compound contains:

[0019] In the light emitting device, a covering layer is provided on the first surface of the first flexible substrate, and the covering layer The insulating layer has a portion that covers the first crack prevention layer, and the covering layer contains a conductive material or a resin material. and positioned between the light emitting element and the end of the first flexible substrate when viewed from a direction perpendicular to the first surface. It is preferable to place

[0020] In the light emitting device, a second crack prevention layer is provided on the second surface of the second flexible substrate. The second crack prevention layer includes a conductive material or a resin material, and is perpendicular to the first surface. It is preferable that the light emitting element is located between the light emitting element and the edge of the first flexible substrate when viewed from any direction.

[0021] Another embodiment of the present invention is a light-emitting device comprising: a first flexible substrate; on a third surface that is the other side of the first surface, or on a second surface that is the other side of the second surface of the second flexible substrate The light-emitting module has a touch sensor on its surface.

[0022] Note that the light-emitting device in this specification includes a display device using a light-emitting element. The device is connected to a connector, such as anisotropic conductive film or TCP (Tape Carrier) The module has a printed wiring board at the end of the TCP. The COG (Chip On Glass) method is used for the module or light emitting element. The module on which the IC (integrated circuit) is directly mounted may have a light emitting device. , lighting fixtures, etc. may include a light-emitting device. [Effects of the Invention]

[0023] According to one aspect of the present invention, there is provided a flexible light emitting device in which defects caused by cracks are reduced. Alternatively, a flexible light-emitting device that is suitable for mass production can be provided. A highly reliable light emitting device can be provided.

[0024] According to one embodiment of the present invention, a novel light-emitting device can be provided. Alternatively, a light emitting device that is less likely to break can be provided. Alternatively, a light emitting device that is thin can be provided. It should be noted that the description of these effects does not preclude the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of these effects. Other effects will become apparent from the description, drawings, claims, etc. It is possible to extract other effects from the description, drawings, claims, etc. is. [Brief explanation of the drawings]

[0025] [Figure 1] 1 shows a configuration example of a display device according to an embodiment. [Figure 2] 1 shows a configuration example of a display device according to an embodiment. [Figure 3] 1A to 1C illustrate a method for manufacturing a display device according to an embodiment. [Figure 4] 1A to 1C illustrate a method for manufacturing a display device according to an embodiment. [Figure 5] 1A to 1C illustrate a method for manufacturing a display device according to an embodiment. [Figure 6] 1A to 1C illustrate a method for manufacturing a display device according to an embodiment. [Figure 7] 1 shows a configuration example of a display device according to an embodiment. [Figure 8]1A to 1C illustrate a method for manufacturing a display device according to an embodiment. [Figure 9] 1 shows a configuration example of a display device according to an embodiment. [Figure 10] 1 shows a configuration example of a display device according to an embodiment. [Figure 11] 1 shows a configuration example of a display device according to an embodiment. [Figure 12] 1 shows a configuration example of a display device according to an embodiment. [Figure 13] 1 shows a configuration example of a display device according to an embodiment. [Figure 14] 1 shows a configuration example of a light emitting device according to an embodiment. [Figure 15] 1 shows an example of the configuration of an electronic device according to an embodiment. [Figure 16] 1 shows an example of the configuration of an electronic device according to an embodiment. [Figure 17] 1 shows a configuration example of a lighting device according to an embodiment. [Figure 18] 1A and 1B are optical microscope photographs and cross-sectional schematic diagrams according to an embodiment. [Figure 19] 1A and 1B are optical microscope photographs and cross-sectional schematic diagrams according to an embodiment. [Figure 20] 1 is a transmission electron microscope photograph according to an example. [Figure 21] 1A to 1C illustrate a method for manufacturing a display device according to an embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0026] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiments, and various changes and modifications may be made in form and detail without departing from the spirit and scope of the present invention. Therefore, the present invention is based on the following embodiments. The present disclosure should not be construed as being limited to the contents of the preceding paragraph.

[0027] In the configuration of the invention described below, the same parts or parts having similar functions The same reference numerals are used in common between different drawings, and repeated explanations may be omitted. In addition, when referring to similar functions, the hatch pattern will be the same and no particular symbol will be attached. There is a match.

[0028] In each figure described in this specification, the size, layer thickness, or area of ​​each component is The figures may be exaggerated for clarity and are not necessarily limited to that scale. stomach.

[0029] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components. The number is not a numerical limitation.

[0030] (Embodiment 1) In this embodiment, a structural example of an image display device and its An example of a method for manufacturing the image display device will be described below with reference to the drawings. Image display devices equipped with organic EL (Electro Luminescence) elements (hereinafter referred to as Hereinafter, the display device (also referred to as a display device) will be described.

[0031] [Example of display device configuration] FIG. 1A shows the top surface of a display device 100 employing a top emission system. A schematic diagram is shown. Note that for clarity, some of the components are omitted in FIG. 1(A). do.

[0032] FIG. 1B shows a state in which a region including one of the four corners of the second substrate 101 shown in FIG. 1A is cut. The cutting line A1-B1, the cutting line C1-D1 cutting a part of the display unit 102, and the signal line The cutting line E1-F1 cutting the area including the drive circuit 103 and the external connection terminal 105 FIG.

[0033] The display device 100 includes a display unit 102 and a signal line driving circuit 103 on the upper surface of a second substrate 101. , a scanning line driver circuit 104 and an external connection terminal 105 .

[0034] In the display device 100, the crack prevention area 110 surrounds the periphery of the display unit 102. Markers 124 are provided at the four corners of the first substrate 121. do.

[0035] Here, the crack prevention region 110 is a region including one or more crack prevention layers, which will be described later. .

[0036] In the display device 100, the first substrate 121 and the second substrate 101 are formed by a sealing layer 153 and a sealing material. The first substrate 121 is opposed to the first buffer layer 154 via an adhesive layer 125. layer (also referred to as a peeled layer, hereinafter simply referred to as a buffer layer) 120, A plurality of first crack prevention layers (hereinafter simply referred to as crack prevention layers) 12 are in contact with the substrate 20. The second substrate 101 is provided with a crack prevention region 110 including an adhesive layer 12. The second buffer layer 132 is disposed on the second buffer layer 132 via the second buffer layer 31. The light emitting element 114, the display unit 102, the signal line driving circuit 103, and the scanning line driving circuit The transistors constituting the elements 104 and the like, and the external connection terminal 105 are provided.

[0037] It is preferable that the first substrate 121 and the second substrate 101 are flexible substrates.

[0038] The buffer layer 120 and the second buffer layer 132 are formed on the substrate (the first substrate 121 and the second substrate 122). Impurities that have passed through the substrate 101 and the adhesive layers (adhesive layers 125 and 131) may be absorbed by the light emitting element 1. In particular, the buffer layer on the upper surface of the light emitting element 114 has a function of suppressing diffusion to the light emitting element 114. By providing the layer 120, the display device 100 can be made highly reliable.

[0039] The buffer layer 120 functions as a barrier film to prevent impurities from diffusing into the light emitting element 114. The buffer layer 120 may be, for example, a single film or a laminated film of an inorganic material. By using such a material, the first substrate 121 can have a barrier property, especially a moisture-proof property. Even when a material with a low moisture content is used, the moisture resistance of the display device can be improved.

[0040] However, inorganic films are prone to brittle fracture, and when the display device 100 is bent, In addition, cracks may occur in the buffer layer 120. In addition, inorganic films with low moisture permeability tend to swell. Since the moisture content is low, for example, when the display device 100 is placed in a high-temperature and high-humidity environment, the buffer layer The adjacent layers of the buffer layer 120 swell more than the adjacent layers of the buffer layer 120 . Stress concentration occurs at the interface between the adjacent layer, which can cause cracks.

[0041] Therefore, a film different from the inorganic film constituting the buffer layer 120 was formed so as to be in contact with the buffer layer 120. By providing the crack prevention layer 122 made of the material, cracks occurring in the buffer layer 120 can be prevented. This can suppress the progression of cracks.

[0042] The crack prevention layer 122 is a conductive film that has higher ductility and a lower swelling rate than an inorganic film. can be suitably used.

[0043] Furthermore, the crack prevention layer 122 may be made of a resin material that has high adhesion to the inorganic film. As a result, the stress concentration occurring on the surface of the buffer layer 120 can be alleviated at the interface. preferable.

[0044] The crack prevention region 110 is composed of two crack prevention layers 122. ), one crack prevention layer 122 surrounds the display unit 102 and is closed when viewed from above. The two curves form a single line (also called a closed curve or a curve with coincident ends).

[0045] The crack prevention area 110 provided to surround the periphery of the display unit 102 in this manner In this case, a large substrate is used to simultaneously manufacture a plurality of display devices 100, and then the display devices 100 are separated into individual devices. In this case, cracks occurring at the edge of the buffer layer 120 are prevented from occurring within the crack suppression region 110. This can prevent the tumor from progressing to the side.

[0046] As will be described later, the display device 100 is fabricated by undergoing a process of peeling off the support substrate. At this time, when peeling progresses from the edge of the substrate, the buffer layer 120 This can prevent the cracks that occur from progressing to the inside of the crack prevention region 110 .

[0047] In FIG. 1A, the crack prevention area 110 is arranged to be a closed curve surrounding the display unit 102. However, the crack prevention area 110 is not necessarily arranged to form a closed curve. It may not be placed at the same position, and may be divided into multiple line segments.

[0048] In FIG. 2(A), for example, the crack prevention region 110 is composed of three crack prevention layers 122. 2(B) shows a schematic top view of the display device 100 when the crack in FIG. 1 is a schematic top view showing an enlarged portion of the inhibition region 110 (enclosed by the dashed line in the figure).

[0049] The cracks extend from the edge of the display device 100 to the inside as shown by the dashed arrows in FIG. 2(A). Therefore, as shown in FIG. 2(B), is not a closed curve, but is a divided curve of each crack prevention layer 122 as shown in FIG. By disposing the parts in a staggered manner, the rigidity of the display device 100 is not increased and cracks are prevented. In addition, the entirety of each line segment of the divided crack prevention layer 122 is For example, the crack prevention layer 122 may be formed perpendicular to the direction of crack propagation. An arrangement such as 2(D) may also be used.

[0050] In this example, the marker 124 provided in contact with the buffer layer 120 is Although it has the function of a live marker, it may also be a marker having another function.

[0051] For example, in the case of forming an EL layer or bonding support substrates together, which will be described later in the example of the manufacturing method, The markings may be alignment markers for positioning the substrate. When a plurality of display devices 100 are simultaneously manufactured using the same alignment marker, the alignment marker is It may be outside the lines that separate the devices 100 individually.

[0052] Other configurations of the display device 100 will be described below with reference to FIG. 1(B). .

[0053] The external connection terminal 105 is connected to the transistors (transistors 111, 11 2, 113) or the conductive layer constituting the light emitting element 114, the manufacturing process In this configuration example, the source electrode or the drain electrode of the transistor is 1 shows an example in which the electrode 136 and the first electrode 143 constituting the first electrode are made of the same material. The display device 100 has an external connection terminal 105 that is made of an anisotropic conductive film (ACF). Anisotropic Conductive Film (ACP) and Anisotropic Conductive Paste (ACP) Anisotropic Conductive Paste) and other materials are used to By implementing flexible printed circuits (ICs), In this configuration example, an FPC 155 is provided via a connector 156. It is being done.

[0054] FIG. 1B shows an example in which a transistor 111 is included as part of the signal line driver circuit 103. The signal line driver circuit 103 is, for example, a A circuit consisting of n-channel transistors and a combination of n-channel transistors The circuit may include a circuit including a p-channel transistor, a circuit including a p-channel transistor, or the like. The same applies to the scanning line driving circuit 104. In this configuration example, the display unit 102 is formed The signal line driving circuit 103 and the scanning line driving circuit 104 are formed on the second buffer layer 132. The driver integrated type configuration is shown. For example, the signal line driver circuit 103 and the scanning line driver circuit 104 Either one or both of them use a driver IC, and COG (Chip on Glass) The second substrate 101 is mounted by a COF (Chip on Film) method or a COF (Chip on Film) method. Alternatively, a flexible substrate (FP) on which a driver circuit IC is mounted using the COF method may be used. C) may be mounted on the second substrate 101.

[0055] FIG. 1B shows a cross-sectional structure of one pixel as an example of the display unit 102. The pixel includes a switching transistor 112, a current control transistor 113, and The current control transistor 113 is electrically connected to one of a pair of electrodes 136. The first electrode 143 is included. An insulating layer 144 is provided to cover the edge of the first electrode 143. There are.

[0056] The transistors (transistors 111, 112, and 113) included in the display device 100 are The figure shows an example of a Tom gate type transistor. Each transistor has a channel The semiconductor layer 135 includes a functional region, a gate electrode 133, and a gate insulating layer. A pair of electrodes 136 are provided so as to be in contact with the semiconductor layer 135. The insulating layer 141 and the insulating layer 142 are provided to cover the semiconductor layer 135 and the electrode 136. In the semiconductor layer 135, a region that functions as a channel is sandwiched between low-level Resistive regions may be provided.

[0057] The light-emitting element 114 includes a first electrode 143, an EL layer 151, a second electrode 152, and a The display device 100 illustrated in this configuration example has a stacked structure in which the top Since the display device is an emission type, a light-transmitting material is used for the second electrode 152 . It is also preferable to use a reflective material for the first electrode 143. Both of them contain a light-emitting organic compound. A voltage is applied between the EL layer 152 and a current flows through the EL layer 151, thereby causing the light emitting element 114 to emit light. It can be made to light up.

[0058] The first substrate 121 is provided so as to face the second substrate 101. The first substrate 121 and the sealing layer 153 and the outer periphery of the display unit 102 and the crack prevention region The sealing layer 153 is attached to the inside of the region 110 by a sealing material 154. Alternatively, the first substrate 121 may be bonded by the adhesive, and the sealant 154 may not be provided.

[0059] A backing is attached to the surface of the first substrate 121 facing the light emitting element 114 via an adhesive layer 125. A buffer layer 120 is provided on the buffer layer 120 at a position overlapping the light emitting element 114. The black matrix 126 is disposed at a position where it overlaps with the insulating layer 144. do.

[0060] A transparent conductive film is formed on the surface of the first substrate 121 that does not face the light emitting element 114. A touch sensor may be formed by the touch sensor. A flexible substrate may be attached to the substrate.

[0061] [Materials and forming method] The following describes materials and methods of forming each of the above elements.

[0062] [Flexible substrate] The flexible substrate is made of organic resin or a thin glass material that is flexible. You can be there.

[0063] For example, polyethylene terephthalate (PET), polyethylene naphthalate (PEN ) and other polyester resins, polyacrylonitrile resins, polyimide resins, polymethylmethacrylate resins Acrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin , polyamide resin, cycloolefin resin, polystyrene resin, polyamide-imide resin, Polyvinyl chloride resin, etc. are examples. In particular, it is preferable to use a material with a low thermal expansion coefficient. For example, the thermal expansion coefficient is 30 × 10 -6 / K or less polyamide-imide resin, polyimide A resin such as a mide resin or PET can be preferably used. Prepreg (also called prepreg) or a substrate with a lower thermal expansion coefficient by mixing inorganic filler into organic resin is used. It can also be used.

[0064] When the above materials contain fibrous bodies, the fibrous bodies are made of high strength organic or inorganic compounds. High strength fibers are specifically fibers with high tensile modulus or Young's modulus. Representative examples include polyvinyl alcohol fibers, polyester fibers, and polyamide fibers. Mid fiber, polyethylene fiber, aramid fiber, polyparaphenylene benzobisoxide Examples of the fiber include Sasol fiber, glass fiber, and carbon fiber. Examples of glass fibers include those made from glass, S-glass, D-glass, and Q-glass. Alternatively, the fiber is used in the form of a nonwoven fabric, and the resin is impregnated into the fiber, and the resin is hardened to form a flexible structure. As a flexible substrate, a substrate made of a fiber body and a resin may be used. The use of a structure is preferable because it improves reliability against damage due to bending or local pressure. stomach.

[0065] The flexible substrate on the side from which light from the light emitting element 114 is extracted is provided with a layer of EL layer 151. A material that is translucent to light emission is used. The material on the light exit side is However, in order to improve efficiency, it is preferable that the refractive index of the flexible and light-transmitting material is high. For example, by dispersing inorganic fillers with a high refractive index in organic resin, a composite consisting of only the organic resin can be obtained. This allows the realization of a substrate with a higher refractive index than conventional substrates. The use of a color is preferred because it does not impair optical clarity.

[0066] In addition, the substrate provided on the side opposite to the light emitting side does not need to be light-transmitting. In addition to the substrates listed above, metal substrates or alloy substrates can also be used. In order to obtain flexibility and bendability, the thickness is set to 10 μm or more and 200 μm or less, preferably 20 μm or more and 50 μm or less. The material for the substrate is not particularly limited, but examples thereof include For example, aluminum, copper, nickel, aluminum alloy, stainless steel, etc. A metal alloy or the like can be suitably used. A flexible substrate on the side from which light is not extracted. In addition, if a conductive substrate containing a metal or alloy material is used, the heat generated by the light emitting element 114 can be effectively prevented. This is preferable because it improves heat dissipation.

[0067] When a conductive substrate is used, the surface of the substrate is oxidized or insulated. It is preferable to use a substrate that has been subjected to an insulating treatment, such as by forming an insulating film. coating methods such as spin coating and dipping, printing methods such as screen printing, and vapor deposition An insulating film is formed on the surface of a conductive substrate using deposition methods such as deposition and sputtering. Alternatively, the method may be performed by leaving or heating in an oxygen atmosphere, or by anodizing. The surface of the substrate may be oxidized.

[0068] In addition, when the surface of a flexible substrate has an uneven shape, the uneven shape can be covered to form a flat surface. A planarizing layer may be provided to form a smooth insulating surface. The material can be organic or inorganic. The oxide layer can be formed by deposition methods such as sputtering, coating methods such as spin coating and dipping, or by ink jetting. Using ejection methods such as ink jet and dispense methods, and printing methods such as screen printing, It can be formed by

[0069] Furthermore, a material in which multiple layers are stacked can also be used as a flexible substrate. For example, a material in which two or more layers made of organic resin are laminated, a material made of a layer made of organic resin and an inorganic material, A material in which layers made of inorganic materials are laminated, or a material in which two or more layers made of inorganic materials are laminated, etc. By providing a layer made of organic material, the penetration of moisture etc. into the interior is suppressed, so the display device This can improve the reliability of the device.

[0070] The inorganic materials include oxide materials, nitride materials, and oxynitride materials of metals and semiconductors. For example, silicon oxide, silicon nitride, silicon oxynitride, silicon oxide, Aluminum, aluminum nitride, aluminum oxynitride, etc. may be used. In this specification, oxynitride refers to a material whose composition contains more nitrogen than oxygen. The term "oxynitride" refers to a composition in which the oxygen content is greater than the nitrogen content. The content of each element is measured using, for example, Rutherford backscattering spectroscopy (RBS). It can be determined.

[0071] For example, when a layer made of an organic resin and a layer made of an inorganic material are laminated, the layer made of the organic resin The upper or lower layer is deposited by sputtering, CVD (Chemical Vapor Deposition) A layer made of the inorganic material is formed by a deposition method, a coating method, or the like. This can be done.

[0072] Further, as the flexible substrate, a glass substrate thin enough to have flexibility may be used. In particular, a sheet in which an organic resin layer, an adhesive layer, and a glass layer are laminated from the side closest to the light emitting element 114 is used. The thickness of the glass layer is preferably 20 μm or more and 200 μm or less. The thickness is preferably 25 μm or more and 100 μm or less. A glass layer of such a thickness is resistant to water and It is possible to simultaneously achieve high oxygen barrier properties and flexibility. The thickness is 10 μm or more and 200 μm or less, preferably 20 μm or more and 50 μm or less. By providing such an organic resin layer in contact with the glass layer, breakage and cracks in the glass layer are suppressed. The composite material of such glass material and organic resin can improve the mechanical strength. By applying this to a flexible substrate, it is possible to achieve extremely reliable and flexible It is possible to provide a display device.

[0073] Note that a non-flexible substrate such as a glass substrate may also be used.

[0074] [Light-emitting element] The light emitting element can be a self-luminous element, which can be illuminated by current or voltage. This category includes devices whose brightness can be controlled, such as light-emitting diodes (LEDs) and organic electroluminescent devices. An inorganic EL element or the like can be used.

[0075] The light emitting element 114 included in the display device 100 of this embodiment has a pair of electrodes (first electrode 1 The light emitting device has a first electrode 43 and a second electrode 152, and an EL layer 151 provided between the pair of electrodes. One of the pair of electrodes functions as an anode and the other functions as a cathode.

[0076] In the light emitting element 114, the electrode provided on the light emitting side has a A light-transmitting material is used.

[0077] Examples of materials having transparency include indium oxide, indium oxide tin oxide, and indium oxide. Zinc oxide, zinc oxide, zinc oxide doped with gallium, etc. can be used. The conductive layer may be made of gold, silver, platinum, magnesium, or the like. , nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or For the material, a metal material such as titanium or an alloy containing these can be used. Nitrides of metal materials (for example, titanium nitride) may also be used. When using a nitride of the above material, it is sufficient to make it thin enough to have transparency. A laminated film can be used as the conductive layer. For example, a silver-magnesium alloy and an indium oxide It is preferable to use a laminated film of tin oxide or the like, since the conductivity can be increased.

[0078] Such electrodes are formed by vapor deposition or sputtering. It is formed using a discharge method such as the ink jet method, a printing method such as the screen printing method, or a plating method. It can be achieved.

[0079] In addition, when the above-described conductive oxide having light-transmitting properties is formed by a sputtering method, When the conductive oxide is formed in an atmosphere containing argon and oxygen, the light transmittance is improved. It is possible.

[0080] When a conductive oxide film is formed on an EL layer, the conductive oxide film contains argon with a reduced oxygen concentration. a first conductive oxide film formed in an atmosphere containing argon and oxygen; A laminated film of the second conductive oxide film is preferable because it can reduce film formation damage to the EL layer. Here, it is particularly preferable that the purity of the argon gas used when forming the first conductive oxide film is high. For example, argon gas having a dew point of -70°C or less, preferably -100°C or less is used. Use the s

[0081] The electrode provided on the opposite side to the light emitting side is made of a material having reflectivity to light emitted from the EL layer 151. It is preferable to use a material that is

[0082] Examples of materials that have light reflectivity include aluminum, gold, platinum, silver, nickel, and titanium. metals such as copper, chromium, molybdenum, iron, cobalt, copper, or palladium, or Alloys containing these metals can be used. Other additives include aluminum and titanium. Aluminum alloys such as aluminum alloys, aluminum-nickel alloys, and aluminum-neodymium alloys Alloys containing palladium (aluminum alloys), silver and copper alloys, silver, palladium and copper alloys, Alloys containing silver, such as an alloy of silver and magnesium, can also be used. Alloys containing silver and copper are Furthermore, the metal film or metal oxide film in contact with the aluminum alloy film is preferably By laminating the oxide film, oxidation of the aluminum alloy film can be suppressed. Examples of the material for the metal oxide film include titanium and titanium oxide. For example, a film made of a material having a specific conductivity and a film made of a metal material may be laminated. Indium tin oxide laminated film, silver-magnesium alloy and indium tin oxide laminated film A membrane or the like can be used.

[0083] Such electrodes are formed by vapor deposition or sputtering. It is formed using a discharge method such as the ink jet method, a printing method such as the screen printing method, or a plating method. It can be achieved.

[0084] The EL layer 151 is a layer containing at least a light-emitting organic compound (hereinafter also referred to as a light-emitting layer). It may be composed of a single layer or a plurality of layers laminated together. The structure is composed of, from the anode side, a hole injection layer, a hole transport layer, a light emitting layer, and an electron transport layer. An example of the structure is a laminate of a layer, an electron injection layer, and an electron injection layer. These layers do not necessarily have to be provided in the EL layer 151. Specifically, a plurality of light-emitting layers may be stacked in the EL layer 151. Alternatively, a hole injection layer may be provided on the electron injection layer. Other components such as an electron relay layer can be added as needed. For example, two or more light-emitting layers having complementary colors may be stacked. By laminating these, white light can be emitted.

[0085] The EL layer 151 is formed by a vacuum deposition method or a discharge method such as an ink jet method or a dispense method. The layer can be formed by using a coating method such as spin coating.

[0086] [Sealing material, sealing layer, adhesive layer] The sealing material 154 and the sealing layer 153 may be, for example, a two-component mixed resin or a thermosetting resin. For example, a curable material such as a photo-curable resin or a gel can be used. Resin, acrylic resin, silicone resin, phenolic resin, polyimide, polyvinyl chloride Polyvinyl butyral (PVB), Ethylene vinyl acetate (EVA) In particular, a material with low moisture permeability such as epoxy resin is preferable.

[0087] The sealant 154 and / or the sealing layer 153 may also contain a desiccant. For example, alkaline earth metal oxides (calcium oxide, barium oxide, etc.) Other desiccants include zeolites and other materials that adsorb moisture by sorption. Alternatively, a substance that adsorbs moisture by physical adsorption, such as silica gel or the like, may be used. By providing a granular desiccant, the light emitted from the light emitting element 114 is diffused by the desiccant. Therefore, it is possible to obtain a light emitting device with high reliability and improved viewing angle dependency (especially useful for lighting applications, etc.). The adhesive layer 125 and the adhesive layer 131 may be made of the same material as the seal material 154. Various materials can be used.

[0088] [Transistor] Transistors constituting the display section 102, the signal line driving circuit 103, and the scanning line driving circuit 104 The structure of the transistor is not particularly limited. For example, the transistor may be a staggered transistor, An inverted staggered transistor may also be used. The transistor structure may be either a channel etch type or a channel etch type. Alternatively, a channel protection type transistor may be used. Alternatively, a channel protection film may be provided only on the channel region. Only the part that comes into contact with the conductor layer is opened, and a channel protection film is also provided in the other areas. That's fine.

[0089] Examples of semiconductors that can be used in the semiconductor layer where the channel of a transistor is formed include silicon. Semiconductor materials such as silicon and germanium, compound semiconductor materials, organic semiconductor materials, or oxide Semiconductor materials may also be used.

[0090] The crystallinity of the semiconductor used in the transistor is not particularly limited. crystalline semiconductors (microcrystalline semiconductors, polycrystalline semiconductors, single-crystal semiconductors, or partially crystalline semiconductors) When a semiconductor having crystallinity is used, the This is preferable because it suppresses deterioration of the transistor characteristics.

[0091] For example, when silicon is used as the semiconductor, amorphous silicon, microcrystalline silicon, Silicon, polycrystalline silicon, single crystal silicon, or the like can be used.

[0092] When an oxide semiconductor is used as the semiconductor, indium, gallium, zinc oxide, It is preferable to use an oxide semiconductor containing at least one of the following: In-Ga -Zn-based metal oxides are examples of these. They have a wider band gap than silicon and By using an oxide semiconductor with a low back-electrode density, leakage current in the off state can be suppressed. This is preferable.

[0093] In this example, a bottom-gate transistor is used. The application of a transistor will be exemplified in a later embodiment.

[0094] [Buffer layer, insulating layer] The buffer layer 120 prevents impurities, especially moisture, from penetrating the first substrate 121 and the adhesive layer 125. The second buffer layer 132 has a function of suppressing diffusion of the second substrate 101 and the It has the function of suppressing the diffusion of impurities that have passed through the adhesive layer 131. The insulating layer 134 in contact with the semiconductor layer of the transistor and the insulating layer 141 covering the transistor are It is preferable to suppress the diffusion of impurities into these layers. Use of oxides or nitrides of conductors, or oxides or nitrides of metals such as aluminum In addition, a laminated film of such inorganic insulating material or a laminated film of inorganic insulating material and organic insulating material can be formed. A laminated film of the above may also be used.

[0095] Examples of the inorganic insulating material include aluminum nitride, aluminum oxide, and aluminum nitride oxide. Aluminum, aluminum oxide nitride, magnesium oxide, gallium oxide, silicon nitride, Silicon oxide, silicon nitride oxide, silicon oxynitride, germanium oxide, zirconium oxide A material selected from ammonium oxide, lanthanum oxide, neodymium oxide, tantalum oxide, etc. is used in a single layer or It is formed by laminating.

[0096] Furthermore, hafnium silicate (HfSiO x ), nitrogen added Hafnium silicate (HfSi x O y N z ), nitrogen-doped hafnium aluminium Laminate (HfAl x O y N z ), hafnium oxide, yttrium oxide, and other high-k Materials may also be used.

[0097] The insulating layer 142 functions as a planarization layer that covers steps caused by transistors, wiring, etc. For example, organic resins such as polyimide, acrylic, polyamide, and epoxy, and inorganic insulating materials The insulating layer 142 can be made of a photosensitive resin (acrylic, polyimide, etc.). The insulating layer 144 is preferably formed using a material similar to the insulating layer 142. It can be formed using materials.

[0098] [Crack prevention layer and marker] The crack prevention layer 122 and the marker 124 are each formed using a conductive material. In addition, the crack prevention layer 122 and the marker 124 can be formed from the same material. This is preferable because it simplifies the process.

[0099] The crack prevention layer 122 prevents cracks from progressing in the buffer layer 120 that is in contact with the crack prevention layer 122. To prevent this, a conductive material that is resistant to external stress is preferred.

[0100] The marker 124 is used when multiple display devices 100 are simultaneously manufactured using a large substrate. In the case where the display device 100 is manufactured by so-called multiple panel cutting, which is subsequently divided into individual panels, Therefore, the cutting of the substrate is performed by a cutting device. When the pattern edge is clear, the marker 124 is positioned at the reading position of the cutting device. It is preferable to form the wiring board using a conductive material, since this reduces misalignment.

[0101] The crack suppression layer 122 and the marker 124 may be made of, for example, molybdenum, titanium, Metals such as chromium, tantalum, tungsten, aluminum, copper, neodymium, and scandium The material or alloy material containing these elements can be used to form a single layer or a laminate. The crack prevention layer 122 and the marker 124 are each made of a conductive metal oxide. It may be formed using

[0102] The thickness of the crack prevention layer 122 must be selected to ensure sufficient mechanical strength. Specifically, the conductive layer is preferably formed to a thickness of 50 nm or more and 1000 nm or less. The thickness is usually between 100 nm and 500 nm.

[0103] The width of the crack prevention layer 122 must be large enough to prevent cracks from progressing. However, by increasing the width of the crack prevention layer 122, it is possible to When manufacturing 100 display devices, the number of desired display devices that can be obtained from one substrate (number of devices obtained) Specifically, the conductive layer is The thickness is preferably 50 μm or more and 500 μm or less.

[0104] [Connector] The connector 156 is a paste or sheet made of a thermosetting resin mixed with metal particles. The metal particles can be made of a material that exhibits anisotropic conductivity when bonded by thermocompression. For example, particles with layers of two or more metals, such as nickel particles coated with gold, It is preferable to use a child.

[0105] [Color filter and black matrix] The color filter 127 is provided to adjust the color of light emitted from the light emitting element 114 and to enhance color purity. For example, in the case of using a white light emitting element to form a full color display device, In this case, multiple pixels with different color filters are used. A three-color filter of green (G), blue (B), or yellow (Y) may be used. It is also possible to add four colors, R, G, B (and Y), and white (W). Pixels may be used to provide four (or five) colors.

[0106] In addition, a black matrix 126 is provided between adjacent color filters 127. The black matrix 126 blocks light from leaking from the light emitting element 114 of the adjacent pixel. The edges of the color filter 127 are then cut away by black lines to prevent color mixing between adjacent pixels. By arranging it so as to overlap with the rack matrix 126, it is possible to suppress light leakage. The black matrix 126 is made of a material that blocks light emitted from the light emitting element 114. The insulating layer 11 can be formed by using a metal material, an organic resin containing a pigment, or the like. The black matrix 126 is provided in an area other than the display area 102, such as the signal line driving circuit 103. It is okay to do so.

[0107] In addition, an overcoat is provided to cover the color filter 127 and the black matrix 126. The overcoat may be used to protect the color filter 127 and the black matrix 126. The overcoat not only protects the material but also prevents impurities contained in the material from diffusing. It is made of a material that transmits light emitted from the element 114, and an inorganic insulating film or an organic insulating film may be used. This can be done.

[0108] In this configuration example, a display device to which a top emission system is applied is exemplified. A display device using the Tom Emission method may also be used. In that case, a color filter The insulating layer 141 is disposed closer to the second substrate 101 than the light emitting element 114. A color filter may be provided on the black matrix 126. It is sufficient to set it on top of other things.

[0109] In this example, color filters are provided, but different colors such as R, G, and B may be used. Any one of the light emitting elements that emit light of the following colors is disposed in a pixel, and a color filter is provided. It may be configured without this.

[0110] This concludes the explanation of each element.

[0111] [Example of manufacturing method] An example of a method for manufacturing the display device 100 will be described below with reference to the drawings.

[0112] 3 to 6 are cross-sectional views of the display device 100 at various stages in an exemplary method for fabricating the display device 100 described below. 3(A) to 6(B) are cross-sectional views of the portions shown in FIGS. 1(A) and 1(B). Corresponds to the structure.

[0113] [Formation of release layer] First, a release layer 162 is formed on a support substrate 161 .

[0114] The support substrate 161 is a substrate that is at least heat resistant to the heat applied in the subsequent steps. The support substrate 161 may be, for example, a glass substrate, a resin substrate, a semiconductor substrate, a metal substrate, or the like. A metal substrate, a ceramic substrate, or the like can be used.

[0115] In order to improve mass productivity, a large glass substrate is used as the support substrate 161. For example, 3rd generation (550mm x 650mm), 3.5th generation (600mm ×720mm, or 620mm × 750mm), 4th generation (680mm × 880mm, or 730mm x 920mm), 5th generation (1100mm x 1300mm), 6th generation (1500mm x 1850mm), 7th generation (1870mm x 2200mm), 8th generation (2200mm×2400mm), 9th generation (2400mm×2800mm, 2450m 10th generation (2950mm x 3400mm) glass substrates, A larger glass substrate can be used.

[0116] The release layer 162 is made of a high melting point metal material such as tungsten, titanium, or molybdenum. Preferably, tungsten is used.

[0117] The peeling layer 162 can be formed by, for example, a sputtering method.

[0118] [Formation of buffer layer] Subsequently, the buffer layer 120 is formed on the release layer 162 (FIG. 3(A)).

[0119] The buffer layer 120 may be formed of silicon oxide, silicon oxynitride, silicon nitride oxide, or nitride. Inorganic insulating materials such as silicon dioxide and aluminum oxide can be used. The layer 120 may be a single layer or a multilayer containing the inorganic insulating material. Cut.

[0120] The buffer layer 120 is a barrier film that prevents impurities from penetrating from the outside of the support substrate 161. In addition, the separation layer 162 has a function of releasing hydrogen by heating, as will be described later. Therefore, the buffer layer 120 has a laminated structure of two or more layers, and At least one layer is a layer that releases hydrogen when heated, and the layer is positioned in a position that releases the hydrogen from the perspective of the peeling layer 162. It is preferable to use a layer that is impermeable to impurities such as hydrogen for the layer further away from the layer that emits the radiation. For example, a stacked structure of a layer containing silicon oxynitride and a layer containing silicon nitride from the peeling layer 162 Let's say.

[0121] The buffer layer 120 is formed by a film formation method such as a sputtering method or a plasma CVD method. In particular, it is preferable to form the film by plasma CVD using a film forming gas containing hydrogen. stomach.

[0122] Here, the surface of the separation layer 162 is oxidized during the formation of the buffer layer 120, and the separation An oxide (not shown) is formed between the release layer 162 and the buffer layer 120. The oxide is This layer contains an oxide of the metal contained in the release layer 162. Preferably, it is tungsten oxide. The layer includes:

[0123] Tungsten oxide is generally WO (3-x) It is expressed as WO3 and W2O5 , W4O 11 , WO2, and other non-stoichiometric compounds that can take on various compositions. oxide (TiO (2-x) ), and molybdenum oxide (MoO (3-x) ) is also a nonstoichiometric compound It is a thing.

[0124] At this stage, the oxide layer preferably contains a large amount of oxygen. When tungsten is used as the layer 162, the oxide layer is a tungsten layer mainly composed of WO3. Preferably, it is tin oxide.

[0125] Here, before the buffer layer 120 is formed, an oxidizing gas, preferably Alternatively, plasma treatment is performed in an atmosphere containing nitrous oxide gas, and the surface of the peeling layer 162 is pre-treated. By using this method, the thickness of the oxide layer can be adjusted to the thickness of the plate. This can be changed by changing the conditions of the plasma treatment, and when plasma treatment is not performed, The thickness of the oxide layer can be more easily controlled than in the case of the method described above.

[0126] The thickness of the oxide layer is, for example, 0.1 nm or more and 100 nm or less, preferably 0.5 nm or more. The thickness should be 20 nm or less. If the oxide layer is extremely thin, it may not be observed in the cross-sectional observation image. There may be cases where this is the case.

[0127] [Heat Treatment] Subsequently, a heat treatment is carried out to transform the oxide layer. Hydrogen is released from the silicon layer 120 and supplied to the oxide layer.

[0128] The metal oxide in the oxide layer is reduced by the hydrogen supplied to the oxide layer, and A state in which a plurality of regions with different oxygen compositions are mixed is obtained. When stainless steel is used, the WO3 in the oxide layer is reduced to a layer with a lower oxygen content. Such metals are generated in a mixed state. Oxides exhibit different crystal structures depending on the oxygen composition, so the oxide layer contains oxides with different oxygen compositions. The formation of multiple regions where the oxide layer is broken weakens the mechanical strength of the oxide layer. This creates a state where the material is easily broken down inside, improving the peelability in the subsequent peeling process. can.

[0129] The heat treatment is performed at a temperature equal to or higher than the temperature at which hydrogen is desorbed from the buffer layer 120 and the softening point of the support substrate 161. The temperature should be higher than the temperature at which the reduction reaction between the metal oxide in the oxide layer and hydrogen occurs. For example, when tungsten is used for the release layer 162, it is preferable to heat the release layer 162 at 420°C or higher. or above, 450°C or above, 600°C or above, or 650°C or above.

[0130] The higher the temperature of the heat treatment, the greater the amount of hydrogen desorbed from the buffer layer 120. However, in consideration of the heat resistance of the support substrate 161 and productivity, If it is desired to lower the heating temperature in consideration of the above, the peeling layer 162 may be preheated with plasma as described above. By forming an oxide layer through the treatment, high peelability is achieved even at low heat treatment temperatures. It can be achieved.

[0131] [Formation of crack prevention layer and marker] Subsequently, a conductive film is formed on the buffer layer 120. Then, a photolithographic process is performed on the conductive film. A resist mask is formed by a photolithography method or the like, and unnecessary portions of the conductive film are removed by etching. After that, the resist mask is removed, and the structure consisting of the plurality of crack prevention layers 122 is formed. The crack suppression region 110 and the marker 124 are formed (FIG. 3(B)).

[0132] The above-mentioned heat treatment is carried out after the crack prevention layer 122 and the marker 124 are formed. By performing such a process, after the conductive film is formed on the buffer layer 120, This can prevent the conductive film from floating up.

[0133] Furthermore, the surfaces of the crack prevention layer 122 and the markers 124 are exposed during the heat treatment. The surfaces of the crack prevention layer 122 and the markers 124 are oxidized by the heat treatment. For this reason, a part of the buffer layer 120 is replaced with a crack prevention layer 122. The buffer layer 1 in FIG. 21 may be formed on the marker 124. The films constituting the stack of the buffer layer 120a and the buffer layer 120b are the films constituting the buffer layer 120. By adopting such a configuration, the transmittance of the entire buffer layer is preferably the same as that of the buffer layer. Without modification, the surface roughness of the crack prevention layer 122 and the marker 124 due to the heat treatment is reduced. can be suppressed.

[0134] For example, the buffer layer 120a may be a silicon oxynitride film having a thickness of about 600 nm, or a silicon nitride film having a thickness of about 200 nm. nm thick silicon nitride film, approximately 200 nm thick silicon oxynitride film, and approximately 140 nm thick silicon nitride film. The buffer layer 120b is a laminated film of silicon nitride oxide films, and a silicon nitride film having a thickness of about 100 nm. For example, the buffer layer 120a is a silicon oxynitride film having a thickness of about 600 nm. A silicon nitride film with a thickness of approximately 280 nm, a silicon oxynitride film with a thickness of approximately 180 nm, A silicon nitride oxide film having a thickness of about 140 nm and a silicon oxynitride film having a thickness of about 115 nm The buffer layer 120b is a silicon oxynitride film having a thickness of about 100 nm.

[0135] [Formation of Black Matrix and Color Filter] Next, a black matrix 126 and a color filter 127 are formed on the buffer layer 120. The black matrix 126 and the color filter 127 are formed by printing (FIG. 3(C)). They are formed by a method such as a liquid crystal display (LCD) method, an ink jet method, or a photolithography method.

[0136] [Formation of gate electrode] Next, a support substrate 163 on which a release layer 164 and a second buffer layer 132 are formed is prepared. The method for forming the release layer 164 and the second buffer layer 132 is the same as the method for forming the release layer 162 and the buffer layer 132 described above. It is similar to layer 120.

[0137] Subsequently, a conductive film is formed on the second buffer layer 132. After that, a photolithography is performed on the conductive film. A resist mask is formed by using a lithography method or the like, and unnecessary portions of the conductive film are removed by etching. Then, the resist mask is removed to form the gate electrode 133. .

[0138] At this time, wiring and the like that constitute the circuit may also be formed at the same time.

[0139] The conductive film that becomes the gate electrode 133 is formed by a sputtering method, a vapor deposition method, a CVD method, or the like. To film.

[0140] [Formation of Gate Insulating Layer] Subsequently, an insulating layer 134 is formed to cover the gate electrode 133 .

[0141] The insulating layer 134 can be formed by a plasma CVD method, a sputtering method, or the like. do.

[0142] [Formation of Semiconductor Layer] Subsequently, a semiconductor film is formed on the insulating layer 134. After that, a photolithographic process is performed on the semiconductor film. A resist mask is formed by etching or the like, and unnecessary portions of the semiconductor film are removed by etching. Then, the resist mask is removed, and the semiconductor layer constituting the transistor is removed. Form 135.

[0143] The semiconductor film may be formed by a method appropriate for the material used. For example, sputtering is used. CVD method, MBE method, ALD (Atomic Layer Deposition) on) method or PLD (Pulsed Laser Deposition) method, etc. You can be there.

[0144] The semiconductor used for the semiconductor layer is preferably an oxide semiconductor. It is preferable to use an oxide semiconductor having a larger band gap than silicon. If a semiconductor material with a wide band gap and low carrier density is used, This is preferable because it can reduce the current when the capacitor is in the off state.

[0145] For example, the oxide semiconductor may contain at least indium (In) or zinc (Zn It is preferable that the oxide contains In-M-Zn (wherein M is Al, Ti, Metals such as Ga, Ge, Y, Zr, Sn, La, Ce or Hf) nothing.

[0146] In particular, the semiconductor layer has a plurality of crystal portions, and the c-axes of the crystal portions are aligned with the surface on which the semiconductor layer is formed. or oriented perpendicular to the upper surface of the semiconductor layer and having no grain boundary between adjacent crystal portions. An oxide semiconductor film is preferably used.

[0147] Such oxide semiconductors have no crystal grain boundaries, so when the display panel is bent, The occurrence of cracks in the oxide semiconductor film due to stress is suppressed. Such oxide semiconductors are suitable for use in flexible display panels that are used in a curved state. You can be there.

[0148] In addition, when polycrystalline silicon is used for the semiconductor film, amorphous silicon is formed as a film. After that, crystallization (for example, laser light irradiation or heat treatment) is performed to form a polycrystalline silicon film. A semiconductor film is formed.

[0149] [Source electrode, drain electrode] Subsequently, a conductive film is formed on the insulating layer 134 and the semiconductor layer 135. A resist mask is formed by photolithography or the like, and unnecessary portions of the conductive film are etched away. Then, the resist mask is removed to reveal the source of the transistor. An electrode 136 that functions as a drain electrode is formed (FIG. 4(A)).

[0150] At this time, wiring and the like that constitute the circuit may also be formed at the same time.

[0151] The conductive film is formed by sputtering, vapor deposition, CVD, or the like.

[0152] Also, at this point, transistors 111, 112, and 113 is formed.

[0153] [Formation of insulating layer] Next, an insulating layer 141 is formed to cover the insulating layer 134, the semiconductor layer 135, and the electrode 136. At this time, one electrode 136 of the current control transistor 113 and the external connection terminal 10 Openings are formed in the insulating layer 141 so as to reach the respective wirings that will become 5 .

[0154] The insulating layer 141 can be formed by a plasma CVD method, a sputtering method, or the like. do.

[0155] In this example of the manufacturing method, the insulating layer 141 is formed on the semiconductor layer 135. Although a single layer is laminated in the above embodiment, the present invention is not limited to this and may have a laminated structure of two or more layers.

[0156] [Formation of Planarizing Layer] Subsequently, an insulating layer 142 is formed to function as a planarizing layer. The wires reach one electrode 136 of the transistor 113 and the external connection terminal 105. An opening is formed in the insulating layer 142 to accommodate the insulating layer 142 .

[0157] The insulating layer 142 is formed by applying a photosensitive organic resin by spin coating or the like, and then selectively It is preferable to form the film by selectively exposing and developing the film. Tarring method, vapor deposition method, droplet ejection method (inkjet method), screen printing, offset Printing or the like may be used.

[0158] [Formation of the first electrode] Subsequently, a conductive film is formed on the insulating layer 142. After that, a photolithography method is performed on the conductive film. A resist mask is formed using a resist film or the like, and unnecessary portions of the conductive film are removed by etching. After that, the resist mask is removed, whereby one electrode 136 of the transistor 113 and A first electrode 143 for electrical connection is formed.

[0159] At this time, wiring and the like that constitute the circuit may also be formed at the same time. By forming the portion that will become the external connection terminal on the same conductive film as the electrode 136, Form a child 105.

[0160] The conductive film is formed by sputtering, vapor deposition, CVD, or the like.

[0161] [Formation of insulating layer] Subsequently, an insulating layer 144 is formed to cover the end of the first electrode 143. An opening reaching the wiring that will become the terminal 105 is formed in the insulating layer 144 .

[0162] The insulating layer 144 is formed by applying a photosensitive organic resin by spin coating or the like, and then selectively It is preferable to form the film by selectively exposing and developing the film. Tarring method, vapor deposition method, droplet ejection method (inkjet method), screen printing, offset Printing or the like may be used.

[0163] An insulating layer may be provided on the insulating layer 144. In FIG. By providing the insulating layer on the insulating layer 144, the insulating layer 144 is formed between the first substrate 121 and the second substrate 101. The insulating layer can be formed using the same material as the insulating layer 144. This can be done.

[0164] [Formation of Light-Emitting Element] Next, an EL layer 151 and a second electrode 152 are formed in this order on the first electrode 143. In this way, the light emitting element 114 is formed (FIG. 4(B)).

[0165] The EL layer 151 is formed by a vacuum deposition method or a discharge method such as an ink jet method or a dispense method. The second electrode 152 is formed by evaporation or spatula coating. It is formed by a tartering method or the like.

[0166] [Lamination] Next, the surface of the support substrate 161 on which the color filter 127 etc. is provided or the surface of the support substrate 16 A sealant 154 is formed on the surface on which the three light emitting elements 114 are provided so as to surround the display unit 102. do.

[0167] The sealing material 154 is applied by a discharge method such as a dispense method, or a printing method such as a screen printing method. After applying the curable resin by a method such as a coating method, the solvent contained in the resin is volatilized.

[0168] Subsequently, the sealing layer 153 is formed on the support substrate 161 or the support substrate 163. The seal material 153 can be formed in the same manner as the seal material 154 described above.

[0169] Here, the sealant 154 is provided to reinforce the sealing performance of the sealing layer 153. If the sealing performance of the stop layer 153 is sufficient, the sealant 154 may not be provided.

[0170] Next, the support substrate 161 and the support substrate 163 are bonded together, and the seal material 154 and the sealing layer By hardening 153, the support substrate 161 and the support substrate 163 are bonded together (FIG. 5( A)).

[0171] [Peeling] Next, the support substrate 161 is peeled off (FIG. 5(B)), and the exposed buffer layer 120 and the first The substrate 121 is attached via the adhesive layer 125. The support substrate 163 is peeled off and exposed. The second buffer layer 132 and the second substrate 101 are bonded together via an adhesive layer 131. In FIG. 6A, the first substrate 121 overlaps with the external connection terminal 105. However, the external connection terminal 105 and the first substrate 121 may not overlap each other.

[0172] As a method of peeling, for example, the support substrate 163 is fixed to an adsorption stage, and the peeling layer 162 is A starting point of peeling is formed between the buffer layer 120 and the surface of the substrate 100. For example, if a sharp object such as a blade is placed between the surface of the substrate 100 and the buffer layer 120, a peeling starting point is formed. The starting point of the peeling may be formed by inserting a tool with a specific shape. The peeling layer 162 is irradiated with laser light to melt, evaporate, or thermally destroy a part of the peeling layer 162, thereby achieving peeling. The starting point may be formed by adding a liquid (e.g., alcohol, water, or water containing carbon dioxide). The liquid is dropped onto the edge of the release layer 162, and the liquid is transported between the release layer 162 and the buffer layer by utilizing capillary action. The initiation point of peeling may be formed by penetrating the boundary of 120.

[0173] Next, in the area where the peeling starting point was formed, the adhesive layer was gently pulled in a direction approximately perpendicular to the adhesive surface. By applying a physical force to the buffer layer 120, the buffer layer 120 and the layers thereon are damaged. It can be peeled off without any damage.

[0174] Here, when peeling, a peeling starting point is formed at the edge of the support substrate 161, and peeling is started from there. In addition, when forming the starting point of peeling, it is preferable to form a In this case, cracks may occur in the buffer layer 120. The crack may progress from the outside to the inside of the buffer layer 120 as the peeling progresses. However, the crack prevention area 110 is provided so as to surround the display unit 102. Even if such a crack occurs, the crack will be prevented from progressing in the crack prevention area. The crack can be stopped in the area where 110 is provided, and the crack does not reach the display part 102. This can effectively suppress the above.

[0175] Next, a method for peeling off the support substrate 163 will be described. For example, first, a removable film is applied to the first substrate 121. A separate support substrate is attached via a suitable adhesive layer (for example, a water-soluble adhesive or a weakly viscous adhesive). Then, the support substrate is fixed in the same manner as above, and a layer is formed between the release layer 164 and the second buffer layer 132. Alternatively, the support substrate 163 may be fixed and the first substrate 12 may be removed. After fixing the first layer 161 with an adsorption pad or the like, a separation layer 164 is placed between the second buffer layer 132. A starting point is formed, and the suction pad is gently attached so that the substrates including the first substrate 121 do not bend. It may be peeled off by lifting it up.

[0176] Finally, the first substrate 121, the adhesive layer 125, the buffer layer 120 and the sealing layer 153 are opened. By doing so, the external connection terminals 105 are exposed (FIG. 6(B)). In the case where the external connection terminal 105 does not overlap the buffer layer 120 and the sealing layer 153, The means for forming the opening is not particularly limited, and examples thereof include laser ablation and etching. The external connection terminal 105 may be formed by a sputtering method, an ion beam sputtering method, or the like. Even if you make a cut in the upper membrane with a sharp blade or the like and peel off part of the membrane with physical force, At this time, the electrode 143 on the outermost surface of the external connection terminal 105 is in close contact with a conductive film such as an EL layer. By providing a film with low adhesiveness, the external connection terminal 105 can be opened without being damaged.

[0177] Through the above steps, the display device 100 can be manufactured.

[0178] In addition to this example of the manufacturing method, various other methods can be used as appropriate for the peeling step. For example, when a layer containing a metal oxide film is formed as a peeling layer on the side in contact with the buffer layer, The metal oxide film can be weakened by crystallization, allowing the buffer layer to be peeled off from the support substrate. In addition, a hydrogen-containing amorphous silicon layer is formed between the heat-resistant support substrate and the buffer layer as a peeling layer. If a film is formed, the amorphous silicon film is removed by irradiation with laser light or etching. The buffer layer can be peeled off from the support substrate. a layer containing a metal oxide film is formed on the side in contact with the metal oxide film, the metal oxide film is weakened by crystallization, and Then, a part of the peeling layer is etched using a solution or fluoride gas such as NF3, BrF3, or ClF3. After removal by the method described above, the weakened metal oxide film can be peeled off. The layer is a film containing nitrogen, oxygen, hydrogen, etc. (for example, an amorphous silicon film containing hydrogen, a hydrogen-containing alloy, etc.) The peeling layer is irradiated with laser light to remove the nitrogen contained in the peeling layer. A method is used in which oxygen and hydrogen are released as gases to promote peeling between the buffer layer and the support substrate. Alternatively, the support substrate on which the buffer layer is formed may be mechanically removed or the solution, NF3, B The method of removing the film by etching with a fluoride gas such as rF3 or ClF3 can be used. In this case, the release layer does not need to be provided.

[0179] Furthermore, by combining a plurality of the above peeling methods, the peeling process can be carried out more easily. In other words, laser irradiation, etching of the peeling layer with gas or solution, sharp knife or Mechanical removal is performed using a scalpel or similar to make it easier to separate the release layer and buffer layer. Alternatively, peeling can be performed by physical force (using a machine, etc.).

[0180] In addition, the buffer layer is peeled off from the support substrate by penetrating a liquid into the interface between the peeling layer and the buffer layer. Furthermore, the peeling may be performed while pouring a liquid such as water on the film.

[0181] As for other peeling methods, if the peeling layer is made of tungsten, ammonia water and The peeling layer may be etched with a mixed solution of hydrogen peroxide and water to perform the peeling.

[0182] If separation is possible at the interface between the support substrate and the buffer layer, a separation layer may not be provided. stomach.

[0183] For example, glass is used as a support substrate, and an organic resin such as polyimide is formed in contact with the glass. Then, insulating films, transistors, etc. are formed on the organic resin. In this case, the organic resin is heated. This allows separation at the interface between the support substrate and the organic resin. 1 shows a schematic cross-sectional view of a display device 100 fabricated by peeling at the interface of the resin. The adhesive layer 128 is attached to the surface of the first substrate 121 facing the light emitting element 114 via the adhesive layer 125. The organic resin layer 138 is provided on the second substrate 101 via the adhesive layer 131. In addition, the crack prevention region 110, the marker 124, and the buff are in contact with the organic resin layer 128. The organic resin layer 138 is provided with a second buffer layer 132 on the organic resin layer 138. The other configurations are the same as those in FIG. 1(B). When the support substrate and the organic resin are peeled off at the interface, cracks occur at the edge of the buffer layer 120. , the crack can be prevented from progressing to the inside of the crack prevention region 110.

[0184] In addition, a metal layer is provided between the support substrate and the organic resin, and a current is passed through the metal layer. The metal layer may be heated to separate the organic resin at the interface between the metal layer and the organic resin.

[0185] This manufacturing method shows the manufacturing process of one display device 100, but considering mass production, It is preferable to simultaneously manufacture a plurality of display devices 100 using a large substrate. For example, after the above-mentioned bonding step or peeling step, the substrate is divided along the markers 124. FIG. 8 is a schematic top view of a case where four display devices 100 are simultaneously manufactured using a large substrate. 1, and when cutting out one display device 100, it is cut along the dashed lines.

[0186] In this manner, a display device in which defects caused by cracks are reduced can be manufactured.

[0187] [Modification of display device] Below, a modification of the display device 100 will be described.

[0188] [Variation 1] FIG. 9 shows a display device 1 in which a covering layer 123 is provided so as to be in contact with a crack prevention layer 122. 00 is a cross-sectional schematic diagram.

[0189] When the marker 124 is not formed on the display device 100, the crack prevention layer 122 is black. By forming it from the same material as the matrix 126, the number of processes can be reduced. This is preferable because it allows the formation of a blocking layer 122.

[0190] In addition, in order to more effectively suppress cracks, a plurality of crack suppression layers 122 are covered. The crack prevention layer 122 of the buffer layer 120 and the covering layer 123 may be formed on the buffer layer 120. If the stress distribution is uneven in the direction of crack propagation at the interface with 123, the crack will occur. Therefore, the coating layer 123 is preferably made of a material different from that of the crack prevention layer 122. The covering layer 123 may be made of a conductive material or a resin material. .

[0191] FIG. 9 shows a case where the crack prevention layer 122 is made of the same material as the black matrix 126. In addition, the display when the covering layer 123 is formed of the same material as the color filter 127 is 1 shows the configuration of the device 100.

[0192] In FIG. 9, an insulating layer 145 is provided on the insulating layer 144 in the display unit 102. By providing the insulating layer 145, the distance between the first substrate 121 and the second substrate 101 can be adjusted. The insulating layer 145 can be formed using the same material as the insulating layer 144. .

[0193] [Variation 2] FIG. 10 shows a display device in which a second crack prevention region 115 is provided on a buffer layer 132. FIG. 1 is a cross-sectional schematic view of the device 100.

[0194] FIG. 10 shows a second crack suppression region 137 formed of a plurality of second crack suppression layers 137. 15 is provided in a position overlapping with the crack prevention area 110. The second crack prevention area 115 is formed not only in the display unit 102 but also in the signal line driving circuit. The wiring 103, the scanning line driving circuit 104, the external connection terminal 105, etc. are arranged so as to surround the , and prevents cracks generated from the end of the second buffer layer 132 from reaching these portions. This can prevent problems such as malfunction of the display device 100 from occurring.

[0195] The second crack prevention layer 137 is provided in contact with the second buffer layer 132. It is preferable that the insulating layer 122 is formed of a conductive material or a resin material, similar to the crack prevention layer 122. In FIG. 10, the second crack prevention layer 137 is preferably formed between the gate electrode 133 and the The display device 100 shown in FIG. Electrodes and wiring that constitute the transistors (111, 112, 113) and the light-emitting element 114 If the second crack prevention layer 137 is formed using the same material as the first crack prevention layer 137, it can be formed without increasing the number of steps. This is preferable because it can

[0196] [Variation 3] 11A, the crack prevention area 110 is located at the external connection terminal 105 when viewed from the display unit 102. 11(B) shows a schematic top view of the display device 100 when the display device 100 is provided further inward. 1(A) shows a schematic cross-sectional view taken along the cutting lines A2-B2, C2-D2, and E2-F2.

[0197] In the above example of the manufacturing method, the crack prevention region 110 is provided outside the external connection terminal 105. However, as shown in FIG. 11, the crack prevention area 110 is located between the external connection terminal 1 and the By providing the external connection terminal 105 inside the external connection terminal 105 in the above example of the manufacturing method, When opening the buffer layer 120 and the sealing layer 153 in the region, the opening When a crack occurs at the edge, the crack is prevented from progressing to the display part 102. can be done.

[0198] In addition, by arranging the crack prevention area 110 in this manner, the crack prevention area 110 The external dimensions of the display device 100 can be made smaller than in a configuration in which the external connection terminal 105 is provided outside the display device 100. This allows for a large number of display devices 100 to be manufactured. , the number of pieces can be increased.

[0199] Note that although a display device including a light-emitting element is described as an example in this embodiment, one embodiment of the present invention is The flexible substrate according to one embodiment of the present invention can be used in devices such as: Examples include various semiconductor devices and various display devices. For example, the following elements or device bases are available: As the plate, a flexible substrate, which is a feature of one embodiment of the present invention, can be applied. EL elements including organic and inorganic materials, organic EL elements, inorganic EL elements), LEDs (white LEDs, Red LED, green LED, blue LED, etc.), transistors (transistors that emit light according to the current Transistors), electron emission elements, liquid crystal elements, electronic ink, electrophoretic elements, grating lights Light bulb (GLV), plasma display (PDP), MEMS (micro-electromechanical systems) display element using a digital micromirror device (DM) D), DMS (Digital Micro Shutter), IMOD (Interference Modulation Modulation) modulation element, shutter-type MEMS display element, optical interference-type MEMS display display element, electrowetting element, piezoelectric ceramic display, carbon nanotube Display elements that use tubes or other devices that use electrical or magnetic effects to change contrast, brightness, and reflection. Display media that change reflectance, transmittance, etc. are also included. Field Emission Display (FED) or SED type flat panel display is an example of a device. Display (SED: Surface-conduction Electron-e In addition, there are display devices using liquid crystal elements. An example is a liquid crystal display (transmissive liquid crystal display, semi-transmissive liquid crystal display, Examples include reflective LCD displays, direct-view LCD displays, and projection LCD displays. In addition, displays using electronic ink, electronic liquid powder (registered trademark), or electrophoretic elements Examples of such devices include electronic paper. To realize a reflective LCD, some or all of the pixel electrodes must be reflective. For example, a part or the whole of the pixel electrode may be Aluminum, silver, etc. may be used. In this case, the reflective electrode may be provided with a It is also possible to provide a memory circuit such as an SRAM. This further reduces power consumption. can be reduced.

[0200] This embodiment mode may be appropriately combined with other embodiment modes and examples described in this specification. It can be implemented.

[0201] (Embodiment 2) In this embodiment, the display device illustrated in the first embodiment is provided with a function as a touch sensor. A light-emitting module equipped with a touch panel that can be used for the touch panel will be described below. Explanation of the parts that overlap with the first embodiment will be omitted.

[0202] [Example of display device configuration] FIG. 12 is a schematic cross-sectional view of the light emitting module 200. As shown in FIG.

[0203] The light emitting module 200 includes the display device 100 and a touch sensor 201. 00 has a first substrate 121, a second substrate 101, and a display unit 102. 01 is provided on the surface of the substrate 221 facing the display device 100 via a buffer layer 220. The first substrate 121, the second substrate 101, and the substrate 221 are all flexible. Preferably, the substrate is a flexible substrate.

[0204] The plurality of wirings 231 are electrically connected to the touch sensor 201. The wire 231 is routed around the outer periphery of the substrate 221, and a part of it constitutes a terminal. It is electrically connected to the FPC 256 via the connector 255 .

[0205] The touch sensor 201 also includes a plurality of clad wires 231 formed of the same material as the plurality of wirings 231. The crack prevention region 210 formed by the crack prevention layer 222 is in contact with the buffer layer 220. The crack prevention region 210 on the outer periphery of the touch sensor 201 prevents the buffer layer The cracks occurring at the end of the light emitting module 220 may occur when the light emitting module 200 is kept in a high temperature and high humidity environment. By holding the touch sensor 201, it is possible to prevent the light from entering the inside of the touch sensor 201.

[0206] As the touch sensor 201, for example, a capacitance type touch sensor can be applied. The capacitance type includes a surface capacitance type, a projected capacitance type, and the like.

[0207] The projected capacitive type is mainly divided into self-capacitance type and mutual capacitance type, which differ mainly in the driving method. The mutual capacitance method is preferable because it allows simultaneous multi-point detection.

[0208] In the following, a case where a projected capacitive touch sensor is applied will be described.

[0209] The configuration of the touch sensor is not limited to the above, and it can detect the proximity or contact of a detection object such as a finger. Various sensors capable of detecting the temperature can be applied.

[0210] The projected capacitive touch sensor 201 has an electrode 234 and an electrode 235. 234 is electrically connected to one of the plurality of wirings 231, and the electrode 235 is electrically connected to one of the plurality of wirings 231. and electrically connect to any other of the above.

[0211] The wiring 232 electrically connects two electrodes 234 that sandwich the electrode 235. It is preferable that the area of ​​the intersection between the line 232 and the electrode 235 is as small as possible. This reduces the area of ​​the region where no electrodes are provided, and reduces variations in transmittance. As a result, unevenness in brightness of light passing through the touch sensor 201 can be reduced.

[0212] The electrodes 234 and 235 may have various shapes. 34 are arranged with as little gap as possible, and the electrode 235 is connected to the electrode 23 through an insulating layer. It is also possible to provide a plurality of such electrodes spaced apart from each other so that there is an area where they do not overlap with the adjacent electrodes. If a dummy electrode electrically insulated from the two adjacent electrodes 235 is provided between them, This is preferable because the area of ​​the region with different transmittances can be reduced.

[0213] The touch sensor 201 is provided on the surface of the buffer layer 220 facing the display device 100. Wiring 232 electrically connecting electrodes 234, an insulating layer 233, and a staggered pattern on the insulating layer 233 The electrode 234 and the electrode 235 are arranged in a pattern, and an insulating layer 236 is provided.

[0214] The adhesive layer 225 is provided at a position where the touch sensor 201 overlaps the display unit 102. The insulating layer 236 is bonded to the surface of the first substrate 121 opposite to the light emitting element 114. There are.

[0215] In this example, the display device 100 is a light-emitting module that employs a top emission system. However, when the display device 100 is a bottom emission type, the adhesive layer 225 is a layer formed by bonding an insulating layer 236 to the surface of the second substrate 101 opposite to the light emitting element 114. match.

[0216] The buffer layer 220 prevents impurities, especially moisture, from diffusing through the substrate 221. The buffer layer 220 may be made of a semiconductor such as silicon, aluminum, or the like. In addition, oxides or nitrides of metals such as aluminum can be used. Alternatively, a laminated film of an inorganic insulating material and an organic insulating material may be used.

[0217] When a light-transmitting conductive material is used for the wiring 232, the aperture ratio of the light-emitting module can be increased. The conductive material having light-transmitting properties is preferably indium oxide, Indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide doped with gallium, etc. Any conductive oxide or graphene can be used.

[0218] After forming a film of a transparent conductive material on the buffer layer 220 by sputtering, By using various patterning techniques such as photolithography, unnecessary parts are removed and the arrangement is completed. The graphene can be formed by a CVD method or by dispersing graphene oxide. Alternatively, the solution may be applied and then reduced to form the film.

[0219] The insulating layer 233 may be made of a resin such as acrylic or epoxy, or a silicon dioxide. In addition to resins with SAN bonds, silicon oxide, silicon oxynitride, aluminum oxide, etc. Inorganic insulating materials can also be used.

[0220] An opening reaching the wiring 232 is provided in the insulating layer 233, and is formed in the same manner as the wiring 232. Electrodes 234 and 235 are formed by this method.

[0221] One electrode 235 extends in one direction, and multiple electrodes 235 are provided in a stripe pattern. .

[0222] The wiring 232 is provided so as to intersect with the electrodes 235 .

[0223] A pair of electrodes 234 are provided with one electrode 235 sandwiched therebetween, and wiring 232 is connected to the adjacent pair of electrodes. The poles 234 are electrically connected.

[0224] The plurality of electrodes 234 do not necessarily need to be arranged in a direction perpendicular to one electrode 235. The angle between the two electrodes may be less than 90 degrees.

[0225] One of the wirings 231 is electrically connected to the electrode 234 or the electrode 235. The wiring 231 may be made of, for example, aluminum, gold, platinum, or silver. , nickel, titanium, tungsten, chromium, molybdenum, iron, cobalt, copper, or para Metallic materials such as zinc and alloy materials containing such metallic materials can be used.

[0226] An insulating layer may be provided to protect the touch sensor 201. An insulating layer 236 is provided covering the edge layer 233, the electrode 234 and the electrode 235.

[0227] Furthermore, the connector 255 electrically connects the wiring 231 and the FPC 256 .

[0228] The connector 255 is an anisotropic conductive film (ACF). Conductive Film) and Anisotropic Conductive Paste (ACP) c Conductive Paste) can be used.

[0229] The adhesive layer 225 is transparent. For example, a thermosetting resin or an ultraviolet curing resin may be used. Specifically, the resin may have an acrylic, urethane, epoxy, or siloxane bond. Resins such as resins can be used.

[0230] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0231] (Embodiment 3) In this embodiment, a display device having a configuration different from that of the display devices exemplified in the first and second embodiments is used. In the following, explanations of parts that overlap with the first embodiment will be omitted. Abbreviated.

[0232] [Example of display device configuration] An example of the configuration of an image display device in which a liquid crystal element is used as a display element will be described below. do.

[0233] FIG. 13(A) shows a schematic top view of the display device 300. FIG. 13(B) shows a schematic top view of the display device 300. A) shows a schematic cross-sectional view of the display device taken along the lines A3-B3, C3-D3, and E3-F3. In contrast to the display device 100 exemplified in the first embodiment, the device 300 does not use a liquid crystal display (LCD) as a display element. The crystal element is used, the transistor configuration is different, and the crack prevention area is arranged differently. They differ mainly in different ways.

[0234] The display unit 102 is in IPS (In-Plane-Switching) mode. The liquid crystal element 314 has a liquid crystal element 314. The liquid crystal element 314 generates an electric field in the horizontal direction with respect to the substrate surface. The orientation of the liquid crystal is controlled by this.

[0235] The pixel includes at least one switching transistor 312 and a storage capacitor (not shown). Also, one of the source electrode and the drain electrode of the transistor 312 is electrically connected to The comb-shaped first electrode 343 and the comb-shaped second electrode 352 are connected to each other by the insulating layer 142. are provided spaced apart above.

[0236] At least one of the first electrode 343 and the second electrode 352 is made of the above-mentioned light-transmitting conductive material. If a transparent conductive material is used for both of these electrodes, the aperture ratio of the pixel can be increased. This is preferable because it can

[0237] In FIG. 13B, the first electrode 343 and the second electrode 352 are shown with different Although the hatched patterns are clearly shown, these are formed by processing the same conductive film. It is preferable.

[0238] The color filter 327 is provided so as to overlap the first electrode 343 and the second electrode 352. FIG. 13B shows a structure in which a color filter 327 is provided on an insulating layer 141. However, the arrangement of the color filters is not limited to this position.

[0239] Between the first electrode 343 and the second electrode 352 and the buffer layer 120, a liquid crystal 353 is provided. By applying a voltage between the first electrode 343 and the second electrode 352, This generates an electric field in the horizontal direction, which controls the orientation of the liquid crystal 353, and the outside of the display device The image is displayed by controlling the polarization of light from the backlight placed in each pixel. It is possible.

[0240] An alignment film for controlling the alignment of the liquid crystal 353 is provided on the surface that comes into contact with the liquid crystal 353. It is preferable that the alignment film is made of a light-transmitting material. A polarizing plate is provided on the outer surface of the first substrate 121 and the second substrate 101 when viewed from the liquid crystal element 314. do.

[0241] Liquid crystal 353 includes thermotropic liquid crystal, low molecular weight liquid crystal, high molecular weight liquid crystal, ferroelectric liquid crystal, Antiferroelectric liquid crystals can be used. In addition, when liquid crystals that exhibit a blue phase are used, the orientation This is preferable because no film is required and a wide viewing angle can be obtained.

[0242] It is preferable to use a material with high viscosity and low fluidity as the liquid crystal 353 .

[0243] In this configuration example, the liquid crystal element 314 to which the IPS mode is applied will be described. The structure of the crystal element is not limited to this, and other types include TN (Twisted Nematic) mode, FFS (Fringe Field Switching) mode, ASM (A xially Symmetric aligned Micro-cell) mode, OCB(Optically Compensated Birefringence) mode, FLC (Ferroelectric Liquid Crystal) mode , AFLC (AntiFerroelectric Liquid Crystal) model A card or the like can be used.

[0244] Transistors (transistor 311, transistor 312) provided in the display device 300 ) are top-gate transistors. Each transistor has a source region or drain region. a semiconductor layer 335 having an impurity region functioning as an in-region and a gate insulating layer functioning as a gate insulating layer; The gate electrode 333 is covered with an insulating layer 334. The insulating layer 334, the insulating layer 338, and the insulating layer 339 are stacked. The source region or drain region of the semiconductor layer 335 is connected to the semiconductor layer 339 through an opening. The sensor includes a pair of electrodes 336.

[0245] In FIG. 13, the crack prevention area 110 is located closer to the display unit 102 than the sealing material 154. In this way, the crack prevention area 110 is provided on the inside of the display unit 1. By providing the buffer layer 120 at a position sufficiently far from the edge of the buffer layer 120, cracks occurring at the edge of the buffer layer 120 can be prevented. The liquid crystal display device 314 is prevented from being damaged by the intrusion of impurities such as moisture. As in the first embodiment, the cracks can be prevented from occurring. The inhibiting region 110 may be provided outside the sealant 154 .

[0246] The top-gate transistor exemplified here may be replaced with the bottom-gate transistor exemplified in the first embodiment. Similarly, the top-gate transistor shown here can be replaced with a A gate-type transistor can also be applied to the first embodiment.

[0247] Note that one embodiment of the present invention is an active matrix type having an active element in a pixel, or A passive matrix system in which pixels do not have active elements can be used.

[0248] In the active matrix system, the active element (active element, nonlinear element) is a transistor. By using not only transistors but also various active elements (active elements, nonlinear elements), For example, MIM (Metal Insulator Metal) or T It is also possible to use FD (Thin Film Diode) and other elements. Since the number of manufacturing steps is small, it is possible to reduce manufacturing costs and improve yields. Alternatively, these elements can improve the aperture ratio due to their small size. This makes it possible to achieve low power consumption and high brightness.

[0249] Other than the active matrix type, active elements (active elements, nonlinear elements) It is also possible to use a passive matrix type that does not use active elements (active elements). Since it does not use any nonlinear elements, there are fewer manufacturing steps, which reduces manufacturing costs and improves yield. Alternatively, active elements (active elements, non-linear elements) can be used. Since the aperture ratio is not increased, it is possible to achieve low power consumption or high brightness. This can be done.

[0250] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0251] (Fourth embodiment) In this embodiment, a configuration example of a light emitting device will be described.

[0252] [Example of display device configuration] FIG. 14 shows an example of a flexible light-emitting device using organic EL elements as light-emitting elements.

[0253] FIG. 14(A) shows a schematic top view of the light emitting device 400, and FIG. 14(B) shows the top view of the light emitting device 400 shown in FIG. 14(A). The light emitting device shown in FIGS. 14(A) and 14(B) is a bottom view. It is an emission type light emitting device.

[0254] As shown in FIG. 14(B), the light emitting device 400 includes a second substrate 419, an adhesive layer 422, a first The second buffer layer 424, the conductive layer 406, the conductive layer 416, the insulating layer 405, the light emitting element 450 ( The first electrode 401, the EL layer 402, and the second electrode 403, the sealing layer 407, and the crack suppression layer The first electrode 401, the second electrode 402, the insulating layer 404, the insulating layer 406, the insulating layer 408, the insulating layer 409, the insulating layer 410, the buffer layer 420, and the first substrate 428. The buffer layer 424, the adhesive layer 422, and the second substrate 419 are transparent to visible light. The first substrate 428 and the second substrate 419 are preferably flexible substrates.

[0255] The crack prevention layer 410 is in contact with the buffer layer 420 and is set so as to surround the light emitting element 450. In this way, the crack prevention layer 410 is positioned at a position sufficiently distant from the light emitting element 450. By providing the buffer layer 420 at this position, if a crack occurs at the end of the buffer layer 420, the progress of the crack can be prevented. This can reduce the intrusion of impurities such as moisture into the light emitting element 450, The optical device 400 can be a highly reliable light emitting device.

[0256] A light emitting element is provided on the second substrate 419 via an adhesive layer 422 and a second buffer layer 424. The second substrate 419, the sealing layer 407, and the first substrate 428 form a semiconductor device. The light emitting element 450 is sealed by the first electrode 401 and the first The device has an EL layer 402 on the first electrode 401 and a second electrode 403 on the EL layer 402. The electrode 403 preferably reflects visible light.

[0257] The ends of the first electrode 401, the conductive layer 406, and the conductive layer 416 are covered with an insulating layer 405. The conductive layer 406 is electrically connected to the first electrode 401, and the conductive layer 416 is electrically connected to the second electrode 403. The conductive layer 406 covered with the insulating layer 405 via the first electrode 401 is electrically connected to , which is electrically connected to the first electrode 401, functions as an auxiliary wiring for the first electrode 401. The electrodes of the EL elements have auxiliary wiring, which suppresses the voltage drop caused by the resistance of the electrodes. The conductive layer 406 may be provided over the first electrode 401. In addition, auxiliary wiring electrically connected to the second electrode 403 may be provided on the insulating layer 405 or the like. good.

[0258] In order to improve the light extraction efficiency of the light emitting device, a light extraction port is provided on the side where light from the light emitting element 450 is extracted. In FIG. 14(B), the light from the light emitting element 450 is extracted. In this example, the second substrate 419 located on the opposite side also serves as a light extraction structure. A light extraction structure such as a sheet having a function of diffusing light is provided on the second substrate 419. A touch sensor may be provided. A polarizing plate or a retardation plate may also be provided. In C), the diffusion plate 411 and the touch sensor 413 are arranged on the second substrate 419. An example of this case is shown below.

[0259] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0260] (Embodiment 5) In this embodiment, electronic devices and display devices to which the light-emitting device or the display device of one embodiment of the present invention can be applied will be described. The lighting device will be described with reference to FIGS. 15 to 17.

[0261] The display device according to one embodiment of the present invention can have a curved display surface. For example, television equipment (also called television or television receiver), computers, Monitors, digital cameras, digital video cameras, digital photo frames, etc. , mobile phones (also called mobile phones or mobile phone devices), portable game consoles, personal digital assistants, sound Examples include sound reproduction devices and large gaming machines such as pachinko machines.

[0262] In addition, lighting and display devices can be installed on the interior or exterior walls of houses and buildings, and on the interior or exterior of automobiles. It is also possible to install it along a curved surface.

[0263] 15A shows an example of a mobile phone. The mobile phone 7100 has a housing 710 1, in addition to a display unit 7102, operation buttons 7103, an external connection port 7104, It is equipped with a speaker 7105, a microphone 7106, a camera 7107, etc. The device 7100 is manufactured using the display device of one embodiment of the present invention for the display portion 7102. do.

[0264] In the mobile phone 7100 shown in FIG. 15A, when the display portion 7102 is touched with a finger or the like, You can also make calls, enter text, and perform other functions. The operation can be performed by touching the display portion 7102 with a finger or the like. The application is started by touching the icon 7108 displayed in the part 7102. It is possible.

[0265] Also, by operating the operation button 7103, the power can be turned on and off, and the display on the display unit 7102 can be For example, you can change the type of image displayed from the email creation screen to the main menu. You can switch to the menu screen.

[0266] Here, the display device of one embodiment of the present invention is incorporated in the display portion 7102. This makes it possible to display images along the curved display surface, and provides a highly reliable mobile phone. It is possible.

[0267] FIG. 15B shows an example of a wristband-type display device. 7201, a display unit 7202, operation buttons 7203, and a transmitting / receiving device 7204. Prepare.

[0268] The portable display device 7200 can receive a video signal by a transmitting / receiving device 7204. The video signal can be displayed on the display unit 7202. In addition, the audio signal can be transmitted to other receiving devices. You can also do this.

[0269] In addition, the operation button 7203 can be used to turn the power on and off and to switch the displayed image. You can also adjust the volume of the audio.

[0270] Here, the display device of one embodiment of the present invention is incorporated in the display portion 7202. As a result, a highly reliable portable display device can be provided that has a curved display portion.

[0271] FIG. 15C shows an example of a wristwatch-type portable information terminal. The watch includes a housing 7301, a display unit 7302, a band 7303, a buckle 7304, and an operation button 7 305, input / output terminal 7306, etc.

[0272] The portable information terminal 7300 is capable of performing functions such as mobile phone calls, e-mails, document viewing and creation, music playback, internet It can run various applications such as internet communication and computer games. Cut.

[0273] The display surface of the display portion 7302 is curved, and displays information along the curved display surface. The display portion 7302 is provided with a touch sensor, and the screen can be touched with a finger or a stylus. For example, the icon 7 displayed on the display unit 7302 can be operated by touching the By touching 307, you can launch the application.

[0274] The operation button 7305 is used to set the time, turn the power on and off, and turn wireless communication on and off. It has various functions such as auto-start, silent mode activation and deactivation, power saving mode activation and deactivation, etc. For example, an operation system built into the portable information terminal 7300 can be The function of the operation button 7305 can also be freely set using the stem.

[0275] In addition, the mobile information terminal 7300 is capable of performing short-distance wireless communication according to a communication standard. For example, by communicating with a wireless headset, hands-free You can also make calls.

[0276] The portable information terminal 7300 also has an input / output terminal 7306, and a connector for connecting to other information terminals. Data can be exchanged directly through the input / output terminal 7306. The charging operation can be performed by wireless power supply without going through the input / output terminal 7306. It is also possible.

[0277] The display device of one embodiment of the present invention is applied to the display portion 7302 of the portable information terminal 7300. Therefore, it is possible to provide a highly reliable portable information terminal with a curved display. This can be done.

[0278] 16(A) to 16(C) show a foldable mobile information terminal 7410. FIG. 16(A) shows the portable information terminal 7410 in an unfolded state. This shows the mobile information terminal 7410 in the process of changing from one folded state to the other. 16(C) shows the portable information terminal 7410 in a folded state. It is highly portable when folded and has a large, seamless display area when unfolded. The display is easier to read.

[0279] The display panel 7412 is supported by three housings 7415 connected by hinges 7413. The hinge 7413 allows the two housings 7415 to bend, making it portable. The information terminal 7410 can be reversibly transformed from an unfolded state to a folded state. A display device manufactured according to one embodiment of the present invention can be used for the display panel 7412. For example, a display device that can be bent with a curvature radius of 1 mm or more and 150 mm or less is suitable. Can be used.

[0280] 16(D) and (E) show a foldable mobile information terminal 7420. ) shows the portable information terminal 7420 in a folded state with the display portion 7422 facing outward. FIG. 16E shows the portable information terminal in a folded state with the display portion 7422 facing inward. When the portable information terminal 7420 is not in use, the non-display portion 7425 is folded outward. By folding the display portion 7422, it is possible to prevent the display portion 7422 from being soiled or scratched. A display device manufactured in this manner can be used for the display portion 7422.

[0281] FIG. 16(F) is a perspective view illustrating the external shape of the portable information terminal 7430. 16(H) is a top view of the portable information terminal 7430. FIG.

[0282] The portable information terminals 7430 and 7440 are selected from, for example, telephones, notebooks, information viewing devices, etc. Specifically, it can be used as a smartphone. This can be done.

[0283] The mobile information terminals 7430 and 7440 can display text and image information on multiple surfaces. For example, three operation buttons 7439 can be displayed on one surface (see FIG. 16( F), (H). Also, the information 7437 shown in the dashed rectangle can be displayed on another surface. (Fig. 16(G), (H)). Examples of information 7437 include SNS (social networking sites) and networking service), notifications, displays to notify you of incoming e-mails and phone calls, etc. Subject of email, sender name of email, date and time, remaining battery level, antenna The strength of the signal reception, etc. Or, the information 7437 is displayed in the place where the information 7437 is displayed. Instead, operation buttons 7439, icons, etc. may be displayed. In (G), an example in which information 7437 is displayed on the upper side is shown. In one embodiment of the present invention, For example, as shown in FIG. 16(H), a mobile information terminal 7440 may be displayed on the side. It may be done.

[0284] For example, the user of the mobile information terminal 7430 may place the mobile information terminal 7430 in the breast pocket of their clothes. When the item is stored, you can check the display (information 7437 in this case).

[0285] Specifically, the telephone number or name of the caller of the incoming call is recorded on the mobile information terminal 7430. The display is positioned so that it can be seen from above. The user takes the mobile information terminal 7430 out of his pocket. You can check the display and decide whether to answer the call without having to take out your phone.

[0286] The housing 7435 of the portable information terminal 7430 and the housing 7436 of the portable information terminal 7440 are A display device manufactured according to one embodiment of the present invention can be used for the display portion 7433. Therefore, a highly reliable portable information terminal having a curved display can be provided. It is possible.

[0287] Also, like the portable information terminal 7450 shown in FIG. 16(I), information is displayed on three or more screens. Here, information 7455, information 7456, and information 7457 are displayed on different surfaces. Shown are the examples shown.

[0288] One embodiment of the present invention is applied to a display portion 7458 of a housing 7451 of a portable information terminal 7450. Therefore, a display device having a curved display portion and manufactured using the same can be used. Furthermore, the portable information terminal can be made highly reliable.

[0289] The display device of one embodiment of the present invention can be applied to the display portion of the electronic devices exemplified in this embodiment. Therefore, defects caused by cracks due to bending are reduced, and reliability is high. Furthermore, an electronic device capable of displaying images along a curved surface can be realized.

[0290] 17(A) to 17(C) show an example of a lighting device. The lighting device 8010 and the lighting device 8020 are each mounted on a base 8003 having an operation switch 8003. 001 and a light emitting part supported by a base part 8001.

[0291] The lighting device 8000 shown in FIG. 17(A) includes a light-emitting unit 8002 having a wavy light-emitting surface. This makes it a highly designed lighting device.

[0292] The light-emitting unit 8012 of the lighting device 8010 shown in FIG. 17(B) has two convexly curved Therefore, the light emitting units are arranged symmetrically. It can illuminate in all directions.

[0293] The lighting device 8020 shown in FIG. 17(C) has a light-emitting portion 8022 that is curved in a concave shape. Therefore, the light emitted from the light emitting unit 8022 is focused on the front surface of the lighting device 8020. It is suitable for brightly illuminating a range.

[0294] In addition, the light-emitting devices 8000, 8010, and 8020 Since the display unit is flexible, it is not possible to attach the display unit to a plastic member or a movable frame. The light emitting surface of the light emitting portion may be configured to be freely curved depending on the application.

[0295] Here, the light-emitting devices of one embodiment of the present invention are incorporated into the light-emitting portions 8002, 8012, and 8022. Therefore, it is possible to provide a highly reliable lighting device with a curved display section. It is possible.

[0296] This embodiment mode may be appropriately combined with other embodiment modes and examples described in this specification. It can be implemented.

[0297] It should be noted that the contents (or even a part of the contents) described in one embodiment may be used in the implementation of the embodiment. Another content (or part of the content) described in the form, and / or one or more other implementations The contents (or a part of the contents) described in the embodiments may be applied, combined, or replaced. You can do things like drawing.

[0298] The contents described in the embodiments are explained using various drawings in each embodiment. This refers to the content stated in the specification or the content stated using the text in the specification.

[0299] In addition, a drawing (or a part thereof) described in one embodiment may be replaced with another part of the drawing. , another figure (or a part thereof) described in the embodiment, and / or one or more By combining the figures (or a part thereof) described in other embodiments of the present invention, This allows for even more diagrams to be constructed.

[0300] In addition, regarding the contents not specified in the drawings or text in the specification, Alternatively, it may be possible to define an upper limit for a certain value. When a numerical range is stated, such as a lower limit and a value, the range may be arbitrarily narrowed. By excluding one point in the scope, one aspect of the invention that excludes part of the scope can be defined. By these, for example, it is possible to determine whether the prior art falls within the technical scope of one aspect of the present invention. It may be stipulated that the

[0301] As a specific example, a circuit diagram using first to fifth transistors in a circuit is shown below. In this case, the circuit does not have a sixth transistor. Or, the circuit does not have a capacitance element. Furthermore, it is possible to specify that the circuit has a specific connection structure. The invention can be stipulated as not having a sixth transistor as described above. Or, the circuit is defined as not having a capacitance element with a specific connection structure. For example, the gate of the first transistor may be connected to the gate of the second transistor. It is possible to provide the invention as not having a sixth transistor connected to it. Alternatively, for example, a capacitor element having a first electrode connected to the gate of the third transistor may be It is possible to define an invention as not having

[0302] Another example is, for a certain value, for example, "a certain voltage is between 3V and 10V." In that case, for example, if a certain voltage is -2 It is possible to specify one aspect of the invention as excluding cases where the voltage is greater than or equal to V and less than or equal to 1 V. For example, one aspect of the invention may be defined as excluding cases where the voltage is 13 V or higher. It is possible to specify the invention as a voltage between 5V and 8V. It is also possible to define the invention as having a voltage of approximately 9V. For example, the voltage is between 3V and 10V, but excluding the case where it is 9V. It is also possible to define an invention by saying that a certain value is within a certain range. "It is preferable that these conditions are met," etc. However, certain values ​​are not limited to those descriptions. However, even if the invention is described as such, it is not necessarily limited to such description.

[0303] As another specific example, regarding a certain value, for example, "a certain voltage is preferably 10V" In that case, for example, if a certain voltage is between -2V and 1V, It is possible to define one aspect of the invention as "except in the following cases." It is possible to specify one aspect of the invention as excluding cases where the voltage applied is 13 V or higher.

[0304] Another specific example is when describing the properties of a substance, for example, "a certain film is an insulating film." In this case, for example, except when the insulating film is an organic insulating film, Alternatively, for example, the insulating film may be made of an inorganic material. It is possible to define one aspect of the invention as excluding the case where the insulating film is an insulating film. It is possible to define one aspect of the invention as excluding cases where the film is a conductive film. Alternatively, for example, one aspect of the invention may be defined as excluding cases where the film is a semiconductor film. It is possible.

[0305] As another specific example, regarding a certain laminated structure, for example, "between film A and film B, there is a film In that case, for example, if the film has four or more layers, It is possible to define the invention as excluding the case of a laminated film. It is possible to define the invention as excluding cases where a conductive film is provided between the film and the conductive film. do.

[0306] It should be noted that one aspect of the invention described in this specification etc. may be practiced by various people. However, the implementation may involve multiple people. For example, in the case of a transmission and reception system, Company A manufactures and sells the transmitter, and Company B manufactures the receiver. Another example is the manufacture and sale of devices that have transistors and light-emitting elements. In the case of a light-emitting device, the semiconductor device in which the transistor is formed is manufactured and sold by Company A. Company B then purchases the semiconductor device and manufactures a light-emitting element in the semiconductor device. In some cases, the light-emitting device is completed by coating the light-emitting element with a film.

[0307] In such a case, there is no invention that can be used to assert patent infringement against either Company A or Company B. In other words, it is possible to construct an invention that can only be implemented by Company A. It is possible to construct an invention that is only implemented by Company B as a separate invention. In addition, it is possible to assert a patent infringement claim against Company A or Company B. It can be determined that one aspect of the invention that can be achieved is clear and described in the present specification, etc. For example, in the case of a transmission and reception system, it is possible to describe only the transmitter and the receiver. Even if the description of the transmitter alone is not included in this specification, the transmitter alone constitutes one aspect of the invention. The receiver alone can constitute an aspect of another invention, and the aspects of those inventions can be The manner is clear and can be judged as being described in the present specification. In the case of a light-emitting device having a transistor and a light-emitting element, The description of only a semiconductor device having a light emitting element or the description of only a light emitting device having a light emitting element are omitted. Even if not stated in the specification, a semiconductor device having a transistor formed thereon alone is an embodiment of the invention. One embodiment of the present invention can be constituted by a light-emitting device having only a light-emitting element. It can be determined that one aspect of the invention is clear and described in the present specification, etc. This can be done.

[0308] In this specification, the terms "active elements (transistors, diodes, etc.)" and "passive elements" are used interchangeably. For all terminals of elements (capacitance elements, resistance elements, etc.), the connection destination must be specified. Even if the invention is not so simple, a person skilled in the art may be able to construct one aspect of the invention. Even if the connection destination is not specified, one aspect of the invention can be said to be clear. When the content of the above is described in this specification, etc., one aspect of the invention that does not specify a connection destination is the present invention. In some cases, it may be possible to determine that the information is written in the detailed instructions, etc. In particular, if the terminals are connected to multiple If the above case is considered, there is no need to limit the connection destination of the terminal to a specific location. Therefore, active elements (transistors, diodes, etc.) and passive elements (capacitance elements, resistance elements) By specifying the connection destinations of only some of the terminals possessed by the invention, It may be possible to configure an embodiment of the present invention.

[0309] In this specification, if at least the connection destination of a certain circuit is specified, the circuit is considered to be a A person skilled in the art may be able to identify the invention. A person skilled in the art may be able to identify an invention by simply specifying its functions. In other words, if a function is specified, it can be said that one aspect of the invention is clear. It may be possible to determine that one aspect of the invention is described in this specification, etc. Therefore, even if the function of a circuit is not specified, if the connection destination is specified, it can be considered as an invention. The invention is disclosed as an embodiment and can be implemented as an embodiment of the invention. Regarding a certain circuit, even if the connection destination is not specified, specifying the function is considered as one aspect of the invention. and can constitute one aspect of the invention.

[0310] In this specification, etc., in a drawing or text described in a certain embodiment, Therefore, it is possible to extract a part of it and use it to constitute an aspect of the invention. If a drawing or text describing a certain part is included, the drawing or text of that part may be omitted. The disclosed content is also disclosed as an aspect of the invention and can constitute an aspect of the invention. And it can be said that one aspect of the invention is clear. Therefore, for example, in drawings or texts in which one or more active elements (such as transistors and diodes), wirings, passive elements (such as capacitive elements and resistive elements), conductive layers, insulating layers, semiconductor layers, organic materials, inorganic materials, components, devices, operation methods, manufacturing methods, etc. are described, it is assumed that a part thereof can be extracted to constitute an aspect of the invention. For example, from a circuit diagram composed of N (N is an integer) circuit elements (such as transistors and capacitive elements), M (M is an integer and M < N) circuit elements (such as transistors and capacitive elements) can be extracted to constitute an aspect of the invention. As another example, from a cross-sectional view composed of N (N is an integer) layers, M (M is an integer and M < N) layers can be extracted to constitute an aspect of the invention. As yet another example, from a flowchart composed of N (N is an integer) elements, M (M is an integer and M < N) elements can be extracted to constitute an aspect of the invention. As yet another example, from a text stating that "A has B, C, D, E, or F", some elements can be arbitrarily extracted to constitute an aspect of the invention such as "A has B and E", "A has E and F", "A has C, E, and F", or "A has B, C, D, and E". And it is possible. And it can be said that one aspect of the invention is clear. For this reason, for example, in drawings or texts in which one or more active elements (such as transistors and diodes), wirings, passive elements (such as capacitive elements and resistive elements), conductive layers, insulating layers, semiconductor layers, organic materials, inorganic materials, components, devices, operation methods, manufacturing methods, etc. are described, it is assumed that a part thereof can be extracted to constitute an aspect of the invention. For example, active elements (such as transistors and diodes), wirings, passive elements (such as capacitive elements and resistive elements), conductive layers, insulating layers, semiconductor layers, organic materials, inorganic materials, components, devices, operation methods, manufacturing methods, etc. Capacitive elements, resistive elements, etc.), conductive layers, insulating layers, semiconductor layers, organic materials, inorganic materials, components, devices, operation methods, manufacturing methods, etc. In drawings or texts in which one or more are described, a part thereof can be extracted to constitute an aspect of the invention. For example, From a circuit diagram composed of N (N is an integer) circuit elements (such as transistors and capacitive elements), M (M is an integer and M < N) circuit elements (such as transistors and capacitive elements) can be extracted to constitute an aspect of the invention. For example, from a circuit diagram composed of N (N is an integer) circuit elements (such as transistors and capacitive elements), M (M is an integer and M < N) circuit elements (such as transistors and capacitive elements) can be extracted to constitute an aspect of the invention. (M is an integer and M < N) circuit elements (such as transistors and capacitive elements) can be extracted to constitute an aspect of the invention. Another example is that from a cross-sectional view composed of N (N is an integer) layers, M (M is an integer and M < N) layers can be extracted to constitute an aspect of the invention. Another example is that from a cross-sectional view composed of N (N is an integer) layers, M (M is an integer and M < N) layers can be extracted to constitute an aspect of the invention. Another example is that from a flowchart composed of N (N is an integer) elements, M (M is an integer and M < N) elements can be extracted to constitute an aspect of the invention. Another example is that from a flowchart composed of N (N is an integer) elements, M (M is an integer and M < N) elements can be extracted to constitute an aspect of the invention. Another example is that from a text stating that "A has B, C, D, E, or F", some elements can be arbitrarily extracted to constitute an aspect of the invention such as "A has B and E", "A has E and F", "A has C, E, and F", or "A has B, C, D, and E". For example, from a text stating that "A has B, C, D, E, or F", some elements can be arbitrarily extracted to constitute an aspect of the invention such as "A has B and E", "A has E and F", "A has C, E, and F", or "A has B, C, D, and E". It is possible.

[0311] ​​​​​This will be easily understood by those skilled in the art. If at least one specific example is described in the drawings or text, The concept is also disclosed as an aspect of the invention and may constitute an aspect of the invention. It is possible, and one aspect of the invention can be said to be clear.

[0312] In this specification, at least the contents shown in the drawings (or even a part of the drawings) is disclosed as one aspect of the invention and can constitute one aspect of the invention. Therefore, if a certain content is shown in a diagram, it can be explained in writing. Even if there is no such content, the content is disclosed as one aspect of the invention, and one aspect of the invention Similarly, even if a part of the drawings is taken out, it is possible to construct the invention. and can constitute one embodiment of the invention. One aspect of the invention is clear. [Example]

[0313] In this example, a display device according to one embodiment of the present invention was manufactured and maintained in a high-temperature and high-humidity environment. The results of the reliability test will be explained below.

[0314] In this example, Sample a, which is a display device according to one embodiment of the present invention, and Comparative Example Comparative sample b was also prepared.

[0315] The sample fabricated in this example was fabricated according to the fabrication method example of Embodiment 1. are.

[0316] [Sample preparation] The materials used for sample a and comparative sample b will be explained with reference to FIG.

[0317] The first substrate 121 and the second substrate 101 are made of plastic film having a thickness of about 20 μm. Lum was used.

[0318] The adhesive layer 125, the adhesive layer 131, and the sealing layer 153 are made of a two-component epoxy resin. was used.

[0319] The buffer layer 120 and the second buffer layer 132 are made of an oxynitride film having a thickness of about 600 nm. Silicon film, silicon nitride film with a thickness of about 200 nm, silicon oxynitride film with a thickness of about 200 nm a silicon nitride oxide film having a thickness of about 140 nm, and a silicon oxynitride film having a thickness of about 100 nm. A laminate of films was used.

[0320] In the sample a only, the crack prevention layer 122 was a titanium film with a thickness of about 100 nm. The coating layer 123 was an acrylic resin film having a thickness of about 2.0 μm.

[0321] The insulating layer 134 is made of a silicon nitride film having a thickness of about 400 nm and an oxide film having a thickness of about 50 nm. The insulating layer 141 was a laminated film of silicon nitride films. A laminated film of a silicon nitride film and a silicon nitride film with a thickness of about 100 nm was used. The layer 142 was an acrylic resin film with a thickness of about 2.0 μm. A polyimide resin film with a thickness of approximately 1.0 μm was used as the substrate.

[0322] [Observation of cracks] Next, after conducting a reliability test on sample a and comparative sample b, In the reliability test, sample a and comparative sample b were exposed to high temperature and humidity. The samples were kept in an environment (temperature 65°C, humidity 90%).

[0323] Optical microscope photographs are shown in Fig. 18(A) and Fig. 19(A). 9(B) shows a schematic cross-sectional structure between the cutting lines X2-Y2 and X3-Y3.

[0324] FIG. 18(A) shows the optical microscope image of sample a after it had been kept in a high-temperature, high-humidity environment for approximately 600 hours. This is a microscope photograph. It can be seen that cracks have occurred from the top to the bottom of the photograph. The crack did not progress further inward (to the lower right) than the crack prevention region 110. You can see that.

[0325] FIG. 19(A) shows the optical properties of comparative sample b after it was kept in a high-temperature, high-humidity environment for approximately 600 hours. A crack has occurred on the left side of the photograph, and the crack is located in the scanning line driving circuit. It can be seen that the damage has progressed to the

[0326] In addition, the cracks in the other sample made of a material different from that of the comparative sample b except for the insulating layer 142 When the cross section of the cracked portion was observed, it was found that a crack had occurred in the buffer layer 120. This was confirmed (FIG. 20). The insulating layer 142 of the sample was made of polyimide with a thickness of about 2.0 μm. From the above results, it is possible to form the crack prevention region 110 in contact with the buffer layer 120. It is believed that by providing the buffer layer 120 in this manner, the progression of cracks occurring in the buffer layer 120 can be suppressed. can be.

[0327] From the above, it is believed that providing a crack prevention layer on the outer periphery of the display device can prevent cracks. It was confirmed that the progression of [Explanation of symbols]

[0328] 100 display device 101 Substrate 102 Display section 103 Signal line driver circuit 104 Scanning line driving circuit 105 External connection terminal 110 Crack suppression area 111 Transistor 112 transistors 113 Transistor 114 Light-emitting element 115 Crack Suppression Area 120 buffer layer 120a buffer layer 120b buffer layer 121 PCB 122 Crack prevention layer 123 Covering layer 124 markers 125 Adhesive layer 126 Black Matrix 127 Color Filter 128 Organic resin layer 131 Adhesive layer 132 buffer layer 133 gate electrode 134 Insulating Layer 135 Semiconductor layer 136 Electrode 137 Crack prevention layer 138 Organic resin layer 141 Insulating layer 142 Insulating layer 143 Electrode 144 Insulating Layer 145 Insulating Layer 151 EL layer 152 Electrode 153 Sealing layer 154 Sealing material 155 FPC 156 Connectors 161 Support substrate 162 Peeling layer 163 Support substrate 164 Peeling layer 200 Light Emitting Module 201 Touch Sensor 210 Crack Suppression Area 220 buffer layer 221 Substrate 222 Crack prevention layer 225 Adhesive layer 231 Wiring 232 Wiring 233 Insulating Layer 234 Electrode 235 Electrode 236 Insulating Layer 255 connectors 256 FPC 300 display device 311 Transistor 312 Transistor 314 Liquid crystal elements 327 Color Filter 333 Gate electrode 334 Insulating Layer 335 Semiconductor Layer 336 Electrode 338 Insulating Layer 339 Insulating Layer 343 Electrode 352 Electrode 353 LCD 400 Light-emitting device 401 Electrode 402 EL layer 403 Electrode 405 Insulation Layer 406 Conductive layer 407 Sealing Layer 410 Crack prevention layer 411 Diffuser 413 Touch Sensor 416 Conductive Layer 419 Substrate 420 buffer layer 422 Adhesive layer 424 buffer layer 428 PCB 450 light-emitting elements 7100 Mobile Phone 7101 Housing 7102 Display section 7103 Operation button 7104 External connection port 7105 Speaker 7106 Microphone 7107 Camera 7108 Icon 7200 Portable display device 7201 Case 7202 Display section 7203 Operation button 7204 Transmitting and receiving equipment 7300 Mobile Information Terminal 7301 Housing 7302 Display section 7303 Band 7304 Buckle 7305 Operation button 7306 Input / output terminal 7307 Icon 7410 Mobile Information Terminals 7412 Display Panel 7413 Hinge 7415 Housing 7420 Mobile Information Terminals 7422 Display section 7425 Hidden part 7430 Mobile Information Terminals 7433 Display section 7435 Case 7436 Case 7437 Information 7439 Operation button 7440 Mobile Information Terminals 7450 Mobile Information Terminal 7451 Housing 7455 Information 7456 Information 7457 Information 7458 Display section 8000 lighting equipment 8001 Daibu 8002 Light-emitting part 8003 Operation switch 8010 Lighting equipment 8012 Light-emitting part 8020 Lighting equipment 8022 Light-emitting part

Claims

[Claim 1] a first flexible substrate, a second flexible substrate, a first buffer layer, a first crack prevention layer, and a light emitting element; a first surface of the first flexible substrate and a second surface of the second flexible substrate are provided opposite to each other; the first buffer layer is provided on the entire first surface of the first flexible substrate; the first crack prevention layer is provided in contact with the first buffer layer and at a position not overlapping the light emitting element, the light-emitting element is provided on the second surface of the second flexible substrate at a position that overlaps the first buffer layer but does not overlap the first crack suppression layer; the first buffer layer is an inorganic film, the first crack prevention layer is a conductive film, The conductive film has higher ductility and a lower swelling rate than the inorganic film.

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