Film thickness measurement apparatus, film formation apparatus, film thickness measurement method, and electronic device manufacturing method

Abstract

To improve the accuracy of a reference measurement.SOLUTION: A film thickness measurement device is provided in a deposition chamber in which deposition is performed on a substrate or in a delivery chamber for delivering the substrate to the deposition chamber and comprises a light-receiving part that receives reflected light reflected by the substrate that is emitted from outgoing radiation that emits light to the substrate and specifying means that specifies the film thickness of the film deposited in a deposition area of the substrate based on the light-receiving result of the light-receiving part. The specifying means specifies the film thickness of the film deposited in the deposition area based on the light-receiving result from the reflected light reflected in the deposition region where deposition has been performed, and the reflected light reflected in a first reference region and a second reference region aligned in a first direction with the deposition region of the substrate.SELECTED DRAWING: Figure 11

Description

[Technical Field]

[0001] The present invention relates to a film thickness measurement apparatus, a film deposition apparatus, a film thickness measurement method, and a method for manufacturing an electronic device. [Background technology]

[0002] As a manufacturing facility for organic EL displays, etc., an apparatus for transporting a substrate to a film formation chamber and forming a film on the substrate is known. Patent Document 1 proposes a film formation apparatus equipped with a film thickness measurement unit that optically measures the film thickness of a film formed on a substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent Publication No. 2021-161490 Summary of the Invention [Problem to be solved by the invention]

[0004] Generally, when optically measuring the thickness of a film formed on a substrate, a reference measurement is performed to obtain reference data. In the reference measurement, for example, light is emitted to an area of ​​the substrate where no film is formed and reflected therefrom. To improve the accuracy of film thickness measurement, it is desirable to perform the reference measurement with high accuracy.

[0005] The present invention provides a technique for improving the accuracy of reference measurements. [Means for solving the problem]

[0006] According to the present invention, provided in a film formation chamber where a film is formed on a substrate or in a delivery chamber for delivering the substrate to the film formation chamber, a light receiving section that receives light that is emitted by an emitting section that emits light to the substrate and is reflected by the substrate; and a determination unit that determines a thickness of a film formed on the film formation region of the substrate based on a light receiving result of the light receiving unit, The identification means identifies the film thickness of the film deposited in the film deposition area based on the light reception results for reflected light reflected in the film deposition area where the film was deposited, and reflected light reflected in a first reference area and a second reference area aligned in a first direction with the film deposition area of ​​the substrate. [Effects of the Invention]

[0007] According to the present invention, the accuracy of the reference measurement can be improved. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. [Figure 2] (A) to (F) are explanatory diagrams of the structure and operation of the deposition source and the moving unit. [Figure 3] FIG. 4 is a plan view illustrating a transport unit. [Figure 4] FIG. 4 is a cross-sectional view illustrating a transport unit. [Figure 5] FIG. 1 is a diagram showing an example of the configuration of a film thickness measuring device. [Figure 6] FIG. [Figure 7] FIG. 2 is a diagram showing a measurement position of a film thickness measurement device. [Figure 8] Cross-sectional view of the film deposition device in the YZ plane. [Figure 9] FIG. 10 is a diagram showing an example of measurement results of reflectance for each film thickness. [Figure 10] 3A and 3B are diagrams showing examples of the arrangement of film formation regions and reference regions for film thickness measurement provided on a substrate; [Figure 11] FIG. 1 is an enlarged view of the film formation area and the reference area for film thickness measurement. [Figure 12] 10 is a flowchart showing an example of a film thickness measurement method. [Figure 13] 1(A) to 1(C) are explanatory diagrams illustrating the operation of the film thickness measuring device. [Figure 14] 10A and 10B are diagrams showing other examples of the arrangement of the film formation region and the periphery of the reference region for film thickness measurement. [Figure 15] FIG. 10 is a diagram showing the relationship between the position in the X direction and the intensity of received light. [Figure 16] FIG. 1 is a schematic diagram illustrating a configuration of a film forming apparatus according to an embodiment. [Figure 17] Schematic diagram showing an overview of the delivery room. [Figure 18] FIG. 4 is a plan view illustrating a substrate support portion. [Figure 19] 10A and 10B are diagrams for explaining the influence of the posture of the substrate W on the film thickness value. [Figure 20] (A) is an overall view of an organic EL display device, and (B) is a diagram showing the cross-sectional structure of one pixel. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, the embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the scope of the invention as claimed, and not all combinations of features described in the embodiments are necessarily essential to the invention. Two or more of the features described in the embodiments may be arbitrarily combined. Furthermore, the same reference numerals are used for the same or similar components, and redundant explanations will be omitted.

[0010] <1. Overview of the film deposition equipment> 1 is a layout diagram of a film forming apparatus 1. In each drawing, arrow Z indicates the vertical direction (direction of gravity), arrows X and Y indicate horizontal directions that are orthogonal to each other, and arrow θ indicates the direction of rotation around the Z axis.

[0011] The film forming apparatus 1 is an apparatus for forming a film on a substrate W. The film forming apparatus 1 can form a thin film of a vapor deposition material in a predetermined pattern on the substrate W using a mask M. The material of the substrate W can be selected appropriately from materials such as glass, resin, and metal, and typically, a substrate in which a resin layer such as polyimide is formed on glass is used. In this embodiment, the substrate W is rectangular. The vapor deposition material is an organic material or an inorganic material (metal, metal oxide, etc.). The film forming apparatus 1 can be applied to manufacturing apparatuses for manufacturing electronic devices such as display devices (such as flat panel displays), thin-film solar cells, and organic photoelectric conversion elements (organic thin-film imaging elements), as well as optical components, and is particularly applicable to manufacturing apparatuses for manufacturing organic EL panels.

[0012] The film formation apparatus 1 includes a transfer chamber 2, a terminal chamber 3, and a film formation chamber 4. Each chamber can be kept airtight by the walls that make up the chamber. That is, each chamber is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas. In this embodiment, each chamber is connected to a vacuum pump (not shown). In this specification, "vacuum" refers to a state filled with gas at a pressure lower than atmospheric pressure, in other words, a reduced pressure state.

[0013] In this example, a transfer chamber 2 and a terminal chamber 3 are arranged side by side in the X direction, and two film formation chambers 4 are arranged on both sides of the terminal chamber 3 in the Y direction. The film formation apparatus 1 is configured so that one transfer chamber 2, one terminal chamber 3, and two film formation chambers 4 form one cluster, and multiple clusters can be connected in the X direction. The number of connected clusters can be set appropriately. Alternatively, the film formation chambers 4 may be provided only on one side of the terminal chamber 3 in the Y direction.

[0014] The film forming apparatus 1 includes transport units 5A and 5B. The transport units 5A and 5B are provided between the terminal chamber 3 and the film forming chamber 4, and transport the substrate W and the mask M between the terminal chamber 3 and the film forming chamber 4.

[0015] The control system of the film forming apparatus 1 includes a host device 300 that controls the entire line as a host computer, and controllers 301-305 that control each component, and these devices can communicate with each other via a wired or wireless communication line 300a. The controller 301 controls a transfer robot 2a (described later) provided in the transfer chamber 2. The base unit 302 controls a transfer robot 3a (described later) provided in the terminal chamber 3. Each of the multiple controllers 303 controls a deposition source 8 and a moving unit 9 (described later) in the corresponding film forming chamber 4. The controllers 304 and 305 control a transfer unit 5A and a transfer unit 5B (described later), respectively. The host device 300 transmits information about the substrate W and instructions such as transfer timing to each of the controllers 301-305, and each of the controllers 301-305 controls each component based on the received instructions. The host device 300 and each of the controllers 301-305 each include a processor such as a CPU, a storage device such as a semiconductor memory or a hard disk, and an input / output interface.

[0016] The film forming apparatus 1 also includes a mask chamber 104 that is provided adjacent to the transfer chamber 2 and that accommodates a mask M.

[0017] <2. Transport Room> In the transfer chamber 2, the substrate W or the mask M is transferred to the terminal chamber 3. A transfer robot 2a is provided in the transfer chamber 2. The transfer robot 2a is a double-arm robot in which two sets of arms 21 and hands 22 are supported on a base 20. The two sets of arms 21 and hands 22 rotate in the θ direction on the base 20 and are also extendable. The transfer robot 2a transfers the mask M in addition to transferring the substrate W. The hand 22 has a fork shape, and the substrate M or mask M is placed on the hand 22 for transfer.

[0018] <3. Terminal Room> In the terminal chamber 3, the substrate W or mask M is transferred between the transfer chamber 2 and the film formation chamber 4, and the substrate W or mask M is allocated to the film formation chamber 4. A transfer robot 3a is provided in the terminal chamber 3. The transfer robot 3a is a robot having an arm 31 and a hand 32 supported on a base 30. The arm 31 and the hand 32 rotate in the θ direction on the base 30 and are also extendable. The transfer robot 3a receives the substrate W or mask M from the transfer robot 2a in the transfer chamber 2 and transfers it to the transfer unit 5 described below. The transfer robot 3a also transfers the substrate W or mask M received from the transfer unit 5 to the downstream transfer chamber 2. A camera (not shown) is provided in the terminal chamber 3 to identify the position of the substrate W or mask M when the transfer robot 3a transfers the substrate W or mask M to the transfer unit 5.

[0019] <4. Film forming chamber> In the film formation chamber 4, a film is formed on a substrate W using a mask M. As shown in FIG. 1, two mask stages 41 are arranged in each of the two film formation chambers 4. A total of four mask stages 41 define deposition positions JA to JD where deposition processes are performed. The two film formation chambers 4 have the same structure. Each film formation chamber 4 is provided with a deposition source 8 and a moving unit 9 that moves the deposition source 8. The structures and operations of the deposition source 8 and the moving unit 9 will be described with reference to FIGS. 2(A) to 2(F).

[0020] The deposition source 8 is a film-forming unit that includes a crucible that contains the raw material of the deposition material, a heater that heats the crucible, and the like, and that heats the raw material and releases the vapor of the deposition material upward from the opening 8a. The moving unit 9 includes an actuator 90, a pair of movable rails 94, and a pair of fixed rails 95. The actuator 90 includes a drive source (not shown), an arm member 91, and an arm member 92. One end of the arm member 91 is connected to a drive source (not shown) and is rotated by the drive source (not shown). The other end of the arm member 91 is rotatably connected to one end of the arm member 92, and the other end of the arm member 92 is rotatably connected to the bottom of the deposition source 8.

[0021] The pair of movable rails 94 guides the movement of the vapor deposition source 8 in the Y direction. Each movable rail 94 extends in the Y direction, and the pair of movable rails 94 are spaced apart from each other in the X direction. The pair of fixed rails 95 guides the movement of the pair of movable rails 94 in the X direction. Each fixed rail 95 is fixed so as to be immovable, and extends in the Y direction. The pair of fixed rails 95 are spaced apart from each other in the Y direction.

[0022] By driving the actuator 90, the deposition source 8 slides in the Y direction below the deposition position JA (below the mask table 41), slides from the deposition position JA side to the deposition position JB side, and further slides in the Y direction below the deposition position JB (below the mask table 41). Specifically, when the arm members 91 and 92 are rotated from the position shown in FIG. 2(A) by driving the actuator 90, the deposition source 8 passes below the deposition position JA in the Y direction, guided by a pair of movable rails 94, as shown in FIG. 2(B). When the arm members 91 and 92 are rotated in the opposite direction by driving the actuator 90 from this state, the deposition source 8 passes below the deposition position JA in the Y direction as shown in FIG. 2(C) and returns to the position shown in FIG. 2(A).

[0023] When the arm members 91 and 92 are further rotated by driving the actuator 90, the vapor deposition source 8 and the pair of movable rails 94 move in the X direction toward the vapor deposition position JB, guided by the pair of fixed rails 95. When the arm members 91 and 92 are further rotated from the position shown in Figure 2(D) by driving the actuator 90, the vapor deposition source 8 passes below the vapor deposition position JB in the Y direction, guided by the pair of movable rails 94, as shown in Figure 2(E). When the arm members 91 and 92 are rotated in the opposite direction by driving the actuator 90 from this state, the vapor deposition source 8 passes below the vapor deposition position JB in the Y direction, as shown in Figure 2(F), and returns to the position shown in Figure 2(D).

[0024] In this manner, in this embodiment, by moving one vapor deposition source 8, the vapor deposition source 8 can be shared by two vapor deposition positions, ie, the vapor deposition position JA and the vapor deposition position JB.

[0025] <5. Transport unit> 1, the film formation apparatus 1 includes two transport units 5A and 5B arranged from the terminal chamber 3 to the two film formation chambers 4. The transport unit 5A includes holding units 6A and 6C, and a moving unit 7A that moves the holding units 6A and 6C independently in parallel in a direction along the film formation surface of the substrate W (the Y direction in this embodiment). The transport unit 5B has a similar structure to the transport unit 5A, and includes holding units 6B and 6D, and a moving unit 7B that moves the holding units 6B and 6D independently in parallel in a direction along the film formation surface of the substrate W (the Y direction in this embodiment). The number and arrangement of the transport units and the holding units and moving units that make up the transport units may be changed as appropriate depending on the configuration of the terminal chamber 3 and the film formation chambers 4.

[0026] Fig. 3 shows the portions of the transport units 5A and 5B that are arranged in the terminal room 3. Fig. 4 shows a cross-sectional view of the transport unit 5A (moving unit 7A and holding unit 6A). The transport units 5A and 5B are units that move holding units 6A to 6D independently in the Y direction in a horizontal position at a position higher than the transport robot 3a, and are arranged side by side in the X direction. Note that Fig. 4 shows the structure of the transport unit 5A (moving unit 7A and holding unit 6A) as a representative, but the holding units 6A to 6D have the same structure, and the moving units 7A and 7B also have the same structure.

[0027] The moving units 7A and 7B of this embodiment are mechanisms that move the holding units 6A to 6D by magnetic force, and in particular, are mechanisms that levitate and move by magnetism. Each of the moving units 7A and 7B includes a pair of guide members 70 that define the movement trajectory of the holding units 6A to 6D in the Y direction. Each guide member 70 has a C-shaped cross section and is a rail member that extends in the Y direction. The pair of guide members 70 are spaced apart from each other in the X direction.

[0028] Each guide member 70 includes a large number of pairs of magnetic elements 71 spaced apart in the Z direction. The large number of pairs of magnetic elements 71 are arranged at equal pitches in the Y direction. At least one of the pair of magnetic elements 71 is an electromagnet, and the other is an electromagnet or a permanent magnet.

[0029] The holding units 6A to 6D are carriers for transporting substrates W and masks M. Each of the holding units 6A to 6D includes a main body member 65 that is rectangular in plan view. Each end of the main body member 65 in the X direction is inserted into a corresponding guide member 70. A permanent magnet 61 with a yoke (not shown) is fixed to the upper and lower surfaces of each end of the main body member 65 in the X direction. A plurality of upper and lower permanent magnets 61 are provided in the Y direction on the main body member 65. The permanent magnets 61 face magnetic elements 71 of the guide member 70. A levitation force can be generated in the holding units 6A to 6D by the repulsive force between the permanent magnets 61 and the magnetic elements 71. By sequentially switching the magnetic elements 71 that generate magnetic force among the many magnetic elements (electromagnets) 71 provided in the Y direction, a moving force in the Y direction can be generated in the holding units 6A to 6D by the attractive force between the permanent magnets 61 and the magnetic elements 71.

[0030] In this embodiment, the moving units 7A and 7B are magnetic levitation transport mechanisms, but they may be other transport mechanisms capable of moving the holding units 6A to 6D, such as a roller transport mechanism, a belt transport mechanism, or a rack-and-pinion mechanism.

[0031] A scale 72 extending in the Y direction is disposed on the guide member 70, and a sensor 64 that reads the scale 72 is provided on the main body member 65. The position of each of the holding units 6A to 6D in the Y direction can be identified based on the detection result of the sensor 64.

[0032] Each of the holding units 6A to 6D includes a holding portion 62 that holds the substrate W. In this embodiment, the holding portion 62 is an electrostatic chuck that attracts the substrate W by electrostatic force, and includes a plurality of electrodes 62a arranged on the lower surface of the holding units 6A to 6D. The holding portion 62 may also include an adhesive pad that holds the substrate W by adhesive force, a vacuum pad, or the like.

[0033] Each of the holding units 6A to 6D also includes a holding portion 63 that holds the mask M. The holding portion 63 is, for example, a magnetic chuck that attracts the mask M by magnetic force, and is located outside the holding portion 62 in the X direction. The holding portion 63 may also be a clamping mechanism that mechanically clamps the mask M.

[0034] The holding units 6A to 6D receive the substrates W and masks M transferred from the transfer robot 3a at predetermined positions within the terminal chamber 3. FIG. 3 shows the holding units 6A to 6D positioned at the respective receiving positions PA to PD. The receiving positions PA to PD are arranged in a matrix (2×2) on the XY plane and are set inside the terminal chamber 3, outside the film formation chamber 4. The presence of four different receiving positions PA to PD also allows these receiving positions PA to PD to be used as buffers for holding substrates W in the event of a system failure downstream.

[0035] <6. Film Thickness Measuring Device> Next, a description will be given of the film thickness measuring device 120 that measures the film thickness of a substrate on which a film has been formed. In this embodiment, the film thickness measuring device 120 uses an optical sensor to measure the film thickness based on the reflectance of light on the substrate surface.

[0036] <6.1. Example of film thickness measurement device configuration> 5 shows a configuration example of the film thickness measurement device 120. The film thickness measurement device 120 according to configuration example 1 includes a light source 2901, a vacuum flange 2902, a light projecting and receiving unit 2903, a spectroscope 2904, a PC 2905, and a moving unit 2906. The light source 2901, the vacuum flange 2902, the light projecting and receiving unit 2903, and the spectroscope 2904 are connected by optical fibers.

[0037] Light source 2901 is a light-emitting device that can switch between light output and non-output by operating shutter 29011. In one example, light source 2901 includes a deuterium (D2) halogen light source 29012 that emits continuous light of halogen and deuterium from one emission port. In another example, light source 2901 includes a laser light source.

[0038] The vacuum flange 2902 is disposed at the connection between the vacuum environment and the atmospheric environment. For example, the light source 2901, the spectroscope 2904, and the PC 2905 are disposed in a housing maintained in the atmospheric environment, and the light projecting and receiving unit 2903 is disposed in a film formation chamber outside the housing that may be kept in a vacuum state, and optical fibers connecting the light projecting and receiving unit 2903 to the light source 2901 and the spectroscope 2904 connect the inside and outside of the housing via the vacuum flange 2902. In another example, the light projecting and receiving unit 2903 may be disposed inside the film formation chamber 4 or the terminal chamber 3, and the light source 2901, the spectroscope 2904, and the PC 2905 may be disposed outside the film formation chamber 4 or the terminal chamber 3. In this case, the vacuum flange 2902 may be provided on the wall surface of the film formation chamber 4 or the terminal chamber 3.

[0039] The light projecting and receiving unit 2903 includes an emitting unit for emitting light from the light source 2901 vertically upward, and a light receiving unit for receiving reflected light and sending it to the spectroscope 2904. The spectroscope 2904 includes a light input port, and measures the light intensity for each wavelength band by splitting the input light. Then, the spectroscope 2904 transmits information about the measured light intensity to the PC 2905.

[0040] The PC 2905 calculates the measured film thickness using formulas (1) and (2) described below based on the light intensity measured by the spectrometer 2904. In one example, the PC 2905 can use the measured film thickness to adjust the time taken for the film formation process of the film formation apparatus 1, adjust the amount of deposition material released from the deposition source 8 of the film formation apparatus 1, adjust parameters of the subsequent film formation process, etc.

[0041] The moving unit 2906 moves the light projecting and receiving unit 2903. In this embodiment, the moving unit 2906 moves the light projecting and receiving unit 2903 in the X direction (the direction of the short side of the substrate W).

[0042] <6.2. Tapered Members> As shown in FIG. 8 (to be described later) and other figures, at the positions MAA to MDC where the film thickness measurement device 120 is installed, the measurement light emitted from the film thickness measurement device 120 may be reflected by the ceiling of the terminal chamber 3 or the deposition chamber 4 and be input to the light projecting / receiving unit, resulting in a decrease in measurement accuracy. For this reason, a tapered member 3101 is installed in the direction of light irradiation from the film thickness measurement device 120, i.e., the ceiling of the terminal chamber 3 in the example of FIG. 6. For example, the tapered member 3101 has a triangular prism, pyramid, or cone shape. This allows the measurement light to be reflected in a direction different from that of the film thickness measurement device 120. In one example, the tapered member 3101 is a black member with high light absorption. In another example, the surface onto which the measurement light from the film thickness measurement device 120 is irradiated is subjected to a surface treatment such as sandblasting to promote light diffusion.

[0043] By arranging the tapered member 3101 in this manner, it is possible to prevent the measurement light emitted from the film thickness measuring device 120 from being reflected at a location other than the substrate W, thereby preventing a decrease in the film thickness measurement accuracy.

[0044] <6.3. Placement of film thickness measuring device> 7 shows measurement positions MAA to MDC where the film thickness measurement device 120 can be arranged in the film formation apparatus. Measurement positions MAA, MBA, MCA, and MDA are between the receiving positions PA to PD and the deposition positions JA to JD and are positions where the film thickness of the substrate W transported by the transport units 5A and 5B is measured within the terminal chamber 3, i.e., outside the film formation chamber 4. Measurement positions MAB, MBB, MCB, and MDB are between the receiving positions PA to PD and the deposition positions JA to JD and are positions where the film thickness of the substrate transported by the transport units 5A and 5B is measured within the film formation chamber 4. Measurement positions MAC, MBC, MCC, and MDC are positions where the film thickness of the substrate located at the deposition positions JA to JD within the film formation chamber 4 is measured. Note that it is sufficient to arrange the film thickness measurement device 120 at at least one of the measurement positions MAA to MDC between the receiving positions PA to PD and the deposition positions JA to JD; it is not necessary to arrange the film thickness measurement device 120 at all measurement positions.

[0045] Fig. 8 is a cross-sectional view of the film formation apparatus in the YZ plane. As shown in Fig. 8, measurement positions MAA to MDC where film thickness measurement device 120 can be located are all located below in the vertical direction (Z direction) of substrate W. This allows the film thickness of substrate W to be measured by film thickness measurement device 120 while being transported by transport units 5A and 5B.

[0046] In this way, the film thickness of the substrate W is measured while the substrate W is held by the holding unit 6, so that the film thickness measurement can be performed without the need for additional large equipment such as a film thickness measurement chamber. Furthermore, since the film thickness measurement is performed while the substrate W is being transported, the film thickness measurement can be performed promptly after the film is formed.

[0047] <6.4. Measurement principle> The following describes the principle of film thickness measurement by the film thickness measurement device 120. The film thickness measurement device 120 of this embodiment performs background measurement, reference measurement, and sample measurement, and identifies the film thickness of the film formed on the substrate W based on these measurement results.

[0048] 6.4.1. Background Measurement The film thickness measuring device 120 emits a laser beam before the substrate W is carried into the measurement position, and measures the intensity of the reflected light. The received intensity of the laser beam here is defined as P BG The received light intensity P BG By measuring this, it is possible to identify the magnitude of noise (background noise) caused by the temperature characteristics of the light receiving sensor, and light leakage from the fiber inside the measuring instrument.

[0049] <6.4.2. Reference Measurement> The film thickness measuring device 120 emits laser light to a reference region (described later) on the substrate W, and measures the intensity of the reflected light as a reference. Here, a region on the substrate W where no film is formed (e.g., bare glass) and the like, which has a reflectance R ref The laser beam is emitted to a known area. Here, the irradiation intensity of the transmitted laser beam is P Tref The received laser light intensity is P RrefThen, the following formula (1) holds. R ref =(P Rref -P BG ) / (P Tref -P BG ) (1) As mentioned above, the reflectance R ref (known), the received light intensity P in the background measurement BG , the received light intensity P in the reference measurement Rref Therefore, based on the above formula, the irradiation intensity P of the laser light Tref This allows the correspondence between the reflectance and the intensity of received light to be determined.

[0050] <6.4.3. Sample Measurement> The film thickness measuring device 120 emits laser light to a film formation region (sample region) of the substrate W and measures the intensity of the reflected light from the film formation region (sample region). Here, the irradiation intensity P of the laser light specified in the reference measurement Tref The received laser beam intensity P R Based on this, the reflectance R of the substrate W on which the film has been formed can be determined by the following equation (2). R=(P R -P BG ) / (P Tref -P BG ) (2)

[0051] FIG. 9 shows an example of the measurement results of reflectance for each film thickness. As shown in FIG. 9, compared to the reflectance of the substrate when the film thickness is 40 angstroms (Å), when the film thickness is 1600 Å, the reflectance is higher around wavelengths of 280 and 330 to 420 nm. Therefore, by measuring the reflectance in this wavelength band, the film thickness can be estimated. Known techniques can be used to estimate the film thickness based on the reflectance. For example, the reflectance may be measured in advance for multiple film thicknesses, and the measured reflectance may be used to estimate which measurement result is closest. Note that information indicating the relationship between film thickness and reflectance may be stored in the PC 2905 or the upper device 300, etc.

[0052] Furthermore, the thickness may be estimated based on reflectance measurements at multiple frequency bands. For example, if the estimated thicknesses based on reflectance measurements at wavelengths of 280 nm and 330 nm are 1000 Å and 1200 Å, respectively, the average of the estimated thicknesses may be taken to be 1100 Å.

[0053] <6.5. Improving the accuracy of reference measurements> One example of a specific method for reference measurement is to flow a reference substrate separately from the substrate W on which a film is to be formed. This method involves flowing substrates on which no film is to be formed through the film formation apparatus 1, which may result in reduced production efficiency. Furthermore, this method may involve a risk of the measurement results being affected by differences in the posture (flexure) of the substrate W on which a film is to be formed and the reference substrate while held in the holding unit 6. Another possible method is to use a predetermined un-filmed region of the substrate W on which a film has been formed as the reference region. However, even in this case, differences in posture (flexure) between the film formation region where sample measurement is performed and the reference region may affect the measurement results. The impact of these postures (flexures) on the measurement results may be greater for larger substrates. For example, with a rectangular substrate such as a sixth-generation (G6) full-size (approximately 1500 mm × approximately 1850 mm) or half-cut size (approximately 1500 mm × approximately 925 mm), the impact of the substrate posture (flexure) on the measurement results may be a concern. Therefore, in this embodiment, the accuracy of the reference measurement is improved by the following method.

[0054] <6.5.1. Reference area placement example> Fig. 10 is a diagram showing an example of the arrangement of a film formation region (sample region) and a reference region for film thickness measurement provided on a substrate W. Fig. 11 is an enlarged view of the periphery of the film formation region (sample region) and the reference region for film thickness measurement.

[0055] In this embodiment, the substrate W is provided with an area R1 for film thickness measurement, separate from an area R2 where a film is formed to form a display element of an electronic device.

[0056] The film thickness measurement region R1 is provided with a film formation region R11 for film thickness measurement and reference regions R12a to R12d. The film formation region R11 is an area to which laser light is irradiated when the above-mentioned sample measurement is performed. The reference regions R12a to R12d are areas to which laser light is irradiated when the above-mentioned reference measurement is performed.

[0057] In the film formation region R11, a thin film for film thickness measurement (sometimes called a measurement patch) is formed. The measurement patch can be formed by forming an opening for the measurement patch in the mask M in advance.

[0058] In this embodiment, the reference regions R12a to R12d are regions where no thin film is formed. The reference regions R12a to R12d can also be said to be regions where the substrate W itself is exposed even after film formation in the film formation chamber 4.

[0059] In this embodiment, the two reference regions R12a and R12b are arranged next to the film formation region R11 in the short-side direction of the substrate W. More specifically, the two reference regions R12a and R12b are arranged such that the film formation region R11 is located between the reference regions R12a and R12b in the short-side direction of the substrate W. In addition, the two reference regions R12c and R12d are arranged next to the film formation region R11 in the long-side direction of the substrate W. More specifically, the two reference regions R12c and R12d are arranged such that the film formation region R11 is located between the reference regions R12c and R12d in the short-side direction of the substrate W. In other words, in this embodiment, the four reference regions R12a to R12d are arranged to surround the film formation region R11 on all four sides.

[0060] The four reference regions R12a to R12d may be provided so that the distances from the film formation region R11 are equal to each other. Furthermore, the four reference regions R12a to R12d may be provided so that the distances from the center of gravity of the film formation region R11 are equal to each other.

[0061] In the region R2, a film is formed through a mask M, thereby forming display elements of a plurality of electronic devices.

[0062] <6.5.2. Film Thickness Measurement Method> Fig. 12 is a flowchart showing an example of a film thickness measurement method. Here, as an example, a case will be described in which the film thickness measurement device 120 measures the film thickness of a film formed on the substrate W at the measurement position MAA. Figs. 13(A) to 13(C) are explanatory diagrams of the operation of the film thickness measurement device 120. For example, this measurement is performed when the substrate W returns from the film formation chamber 4 to the terminal chamber 3 after a film has been formed on the substrate W at the deposition position JA.

[0063] In S1, background measurement is performed (FIG. 13(A)). The background measurement is performed before the substrate W after film formation reaches the measurement position MAA. For example, under the control of the PC 2905, the light projecting and receiving unit 2903 emits laser light from the emission unit and receives the light from the light receiving unit. Then, the PC 2905 calculates the received light intensity P for each wavelength band of the light that is transmitted from the light receiving unit of the light projecting and receiving unit 2903 and dispersed by the spectroscope 2904. BG The background measurement does not have to be performed for each substrate W. The background measurement may be performed each time film formation is performed on a predetermined number of substrates W. Furthermore, the background measurement may be performed at predetermined intervals.

[0064] In S2, a reference measurement is performed (FIG. 13(B)). The reference measurement is performed after the film formation region R11 of the substrate W after film formation reaches the measurement position MAA. Under the control of the PC 2905, the light projecting and receiving unit 2903 emits laser light to the reference regions R12a to R12d using the emission unit, and receives the reflected light using the emission unit. In this embodiment, the position adjustment between the laser light emission position of the emission unit and each of the reference regions R12a to R12d is performed by the moving unit 2906. However, part of the position adjustment process may be performed by the transport unit 5A. For example, if the moving unit 2906 can move the light projecting and receiving unit 2903 only in the X direction, the position adjustment in the X direction may be performed by the moving unit 2906, and the position adjustment in the Y direction may be performed by the transport unit 5A. The PC 2905 calculates the received light intensity P for each of the reference regions R12a to R12d. Rrefa ~P Rrefd Measure.

[0065] In S3, sample measurement is performed (FIG. 13(C)). Under the control of the PC 2905, the light projecting and receiving unit 2903 emits laser light to the film formation region R11 (sample region) through the emission unit, and receives the reflected light through the light receiving unit. The PC 2905 calculates the received light intensity P of the reflected light by the light receiving unit. R Get.

[0066] In S4, the film thickness is determined. The PC2905 determines the thickness of the film formed in the film formation region R11 based on the light reception results of the light receiving section of the light projecting and receiving unit 2903 regarding the light reflected from the film formation region R11 and the light reflected from the reference regions R12a to R12d. As described above, the PC2905 can calculate the reflectance R of the film formation region R11 where the film is formed, using the measurement results of the background measurement, the reference measurement, and the background measurement. Then, the PC2905 can determine the film thickness of the film formed in the film formation region R11 based on the reflectance R calculated by the current measurement and stored information indicating the relationship between film thickness and reflectance.

[0067] In detail, in this embodiment, the PC2905 detects the received light intensity P Rrefa ~PRrefd The received light intensity P is the average value of Rrefave is used to determine the film thickness. As mentioned above, when the influence of the attitude (way of bending) of the substrate W is taken into consideration, there is a risk that the light receiving intensity at the light receiving unit will differ between the film formation region R11 and the reference regions R12a to R12d that are a predetermined distance away from the film formation region R11 due to the difference in attitude (way of bending). In this embodiment, by using , the influence of the difference in attitude of the substrate W can be reduced, and the accuracy of the reference measurement can be improved. Furthermore, the light receiving intensity P of the multiple reference regions R12a to R12d around the film formation region R11 Rrefa ~P Rrefd By taking the average value, it is possible to approach the measurement result when a reference measurement is performed on an area having the same posture (bending) as the film formation area R11. In other words, the average received light intensity P Rrefave It can also be said that this is an estimated value of the received light intensity when a reference measurement is performed by irradiating the film formation region R11 with laser light before film formation.

[0068] Here, an example has been described in which a reference measurement is performed in S2 and then a sample measurement is performed in S3. However, the reference measurement and sample measurement may be performed in parallel. For example, the light projecting and receiving unit 2903 may emit laser light and receive reflected light in the order of reference region R12a, film formation region R11, and reference region R12b. This reduces the amount of movement of the light projecting and receiving unit 2903 by the moving unit 2906 throughout the entire measurement, thereby improving the efficiency of film thickness measurement.

[0069] <6.5.3. Other examples of reference area placement> 14(A) and 14(B) are diagrams showing other examples of the arrangement of the film formation region (sample region) and the periphery of the reference region for film thickness measurement.

[0070] In this example, the two reference regions R12Ba and R12Bb are provided such that the film formation region R11B is located between the reference regions R12Ba and R12Bb in the short-side direction of the substrate W. For example, PC2905 determines the film thickness using the average value of the received light intensities in the reference regions R12Ba and R12Bb. This arrangement also improves the accuracy of the reference measurement compared to, for example, when only one reference region is provided.

[0071] 14(B), the film formation region R11C and two reference regions R12Ca and R12Cb are arranged so as to be aligned in the order of film formation region R11C, reference region R12Ca, and reference region R12Cb in the short side direction of the substrate W. For example, PC2905 is a signal that indicates the received light intensity P RrefCa and P RrefCd and the position X in the short side direction (X direction) of the substrate W R12Ca , X R12Cb In detail, as shown in FIG. RrefCa and P RrefCd and position X R12Ca , X R12Cb Then, the Y-direction position Y=Y C Received light intensity R for position X at ref Then, the relational expression 1501 is calculated. Then, the relational expression 1501 and the position X in the X direction of the film formation region R11C are calculated. R11C Therefore, the received light intensity as a result of the reference measurement is Rref Here, if the substrate W is warped, the distance between the light projecting and receiving unit 2903 and the substrate W changes depending on the position in the X direction. Therefore, as shown in FIG. 15, the intensity of received light may change depending on the position in the X direction.

[0072] 14(A) and 14(B), when the film formation region and the multiple reference regions are arranged in a line in only one direction, the reference measurement and the sample measurement can be performed while the moving unit 2906 moves in only one direction, thereby enabling efficient film thickness measurement.

[0073] Here, the relational expression 1501 was calculated based on the measurement results in two reference regions R12Ca and R12Cb. However, three or more reference regions may be provided in line with the film formation region R11 in a predetermined direction. An approximate line or approximate curve may be calculated from these measurement results. As a calculation method, a known method such as a method using the least squares method may be appropriately adopted.

[0074] Also, here, an example has been shown in which the film formation region R11C and the two reference regions R12Ca and R12Cb are aligned in the short side direction of the substrate W. However, the film formation region R11C and the two reference regions R12Ca and R12Cb may be aligned in the long side direction of the substrate W. Alternatively, they may be aligned obliquely with respect to the short side and long side directions of the substrate W.

[0075] As described above, in this embodiment, reference measurement is performed by emitting light to at least two reference regions aligned in a predetermined direction with the film formation region. This reduces the effect of the attitude of the substrate W on measurement accuracy. Therefore, the accuracy of the reference measurement can be improved.

[0076] In this embodiment, the film thickness is measured based on the results of reference measurements in reference regions R12a and R12b that are aligned with the film formation region R11 in the X direction, and in reference regions R12c and R12d that are aligned with the film formation region R11 in the Y direction that intersects with the X direction. This further improves the accuracy of the reference measurements.

[0077] Furthermore, in this embodiment, measurements are performed in the film formation region R11 and the reference region R12 while the light projecting and receiving unit 2903 is moved by the moving unit 2906. When the light projecting and receiving unit 2903 moves, the attitude of the optical fiber connected to the light projecting and receiving unit 2903 changes, which may affect the amount of emitted light. However, by performing reference measurements in the reference regions R12a to R12d, the influence of changes in light amount due to changes in the attitude of the optical fiber can be reduced.

[0078] <8. Other embodiments> <8.1. Film deposition equipment> FIG. 16 is a schematic diagram showing the configuration of a film forming apparatus 901 according to one embodiment.

[0079] In the film formation block 9301, a plurality of film formation chambers 9303a to 9303d in which film formation processing is performed on substrates W and a mask storage chamber 9305 in which masks before and after use are stored are arranged around a transfer chamber 9302 that has an octagonal shape in a plan view. A transfer robot 9302a that transfers the substrates W is arranged in the transfer chamber 9302. In the following description, when the film formation chambers 9303a to 9303d are not particularly distinguished from one another, they may be referred to as film formation chambers 9303.

[0080] A buffer chamber 9306, a swirl chamber 9307, and a delivery chamber 9308 are disposed upstream and downstream of the film formation block 9301 in the transport direction (arrow direction) of the substrate W, respectively. During the manufacturing process, each chamber is maintained in a vacuum state. Although only one film formation block 9301 is shown in FIG. 16, the film formation apparatus 901 according to this embodiment has multiple film formation blocks 9301, which are connected by a connection device made up of the buffer chamber 9306, the swirl chamber 9307, and the delivery chamber 9308.

[0081] The transport robot 9302a transports substrates W from the upstream delivery chamber 9308 to the transport chamber 9302, transports substrates W between the film forming chambers 9303, transports masks between the mask storage chamber 9305 and the film forming chamber 9303, and transports substrates W from the transport chamber 9302 to the downstream buffer chamber 9306.

[0082] The buffer chamber 9306 is a chamber for temporarily storing substrates W depending on the operating status of the film formation apparatus 901. The buffer chamber 9306 is provided with a multi-tiered substrate storage shelf (also called a cassette) capable of storing multiple substrates W while maintaining the substrates W in a horizontal position with their surfaces to be processed (surfaces to be film-formed) facing downward in the direction of gravity, and an elevator mechanism for raising and lowering the substrate storage shelf to align the stage for loading or unloading the substrates W with the transport position. This allows multiple substrates W to be temporarily stored and retained in the buffer chamber 9306.

[0083] The swirl chamber 9307 is equipped with a device for changing the orientation of the substrate W. In this embodiment, the swirl chamber 9307 rotates the orientation of the substrate W by 180 degrees using a transfer robot 9307a provided in the swirl chamber 9307. The transfer robot 9307a provided in the swirl chamber 9307 turns 180 degrees while supporting the substrate W received in the buffer chamber 9306 and delivers it to the delivery chamber 9308, thereby swapping the front end and rear end of the substrate W in the transport direction (arrow direction) between the buffer chamber 9306 and the delivery chamber 9308. As a result, the orientation of the substrate W when carried into the film formation chamber 9303 is the same in each film formation block 9301, and therefore the scanning direction of film formation on the substrate W and the orientation of the mask can be aligned in each film formation block 9301. With this configuration, the orientation of the masks placed in the mask storage chambers 9305 in each film formation block 9301 can be aligned, which simplifies mask management and improves usability.

[0084] The delivery chamber 9308 is a chamber for delivering the substrate W carried in by the transport robot 9307a in the swirl chamber 9307 to the transport robot 9302a in the downstream film formation block 9301. In this embodiment, as will be described later, the film thickness of the film formed on the substrate W is measured in the delivery chamber 9308. In other words, the delivery chamber 9308 can be said to be an inspection chamber for inspecting the film formed on the substrate W.

[0085] The control system of the film forming apparatus 901 includes a host device 9300 that controls the entire line as a host computer, and control devices 9309, 9310, 9311, 9313a to 9313d that control each component, and these can communicate via a wired or wireless communication line 9300a. The control devices 9313a to 9313d are provided corresponding to the film forming chambers 9303a to 9303d and control the film forming process in the film forming chambers. The control device 9309 controls the transfer robot 9302a. The control device 9310 controls the transfer robot provided in the swirl chamber 9307. The control device 9311 controls the equipment that performs alignment and film thickness measurement in the delivery chamber 9308. The host device 9300 transmits information about the substrate W and instructions such as transport timing to the respective control devices 9309, 9310, 9311, 9313a to 9313d, and the respective control devices 9309, 9310, 9311, 9313a to 9313d control their respective components based on the received instructions.

[0086] <8.2. Delivery Room> 17 is a schematic diagram showing an overview of the delivery chamber 9308. The delivery chamber 9308 is provided with a substrate support part 950 that supports a substrate W, and a film thickness measurement device 9120 that measures the film thickness of the substrate W supported by the substrate support part 950. Note that the elements that make up the film thickness measurement device 9120 may have the same configuration as the elements of the film thickness measurement device 120 of the above embodiment, and therefore the same reference numerals are used and description thereof will be omitted.

[0087] <8.3. Substrate support> 18 is a plan view illustrating the substrate support portion 950. The substrate support portion 950 supports a substrate W. The substrate W supported by the substrate support portion 950 has a rectangular shape including a side Wa, a side Wb opposite to the side Wa, and a side Wc connecting the sides Wa and Wb. In this embodiment, the sides Wa and Wb are long sides, and the side Wc and the side Wd opposite to the side Wc are short sides. The substrate support portion 950 includes a frame member 951 and a plurality of support members 952 (952a to 952d).

[0088] The frame member 951 is a member that supports the plurality of support members 952. The frame member 951 is supported, for example, by a wall of the delivery chamber 9308. The frame member 951 may be provided so as to be movable in a predetermined direction so that alignment of the substrate W supported by the plurality of support members 952 can be performed. The frame member 951 is also provided so as to cover the entire periphery of the substrate W in a state where it is supported by the support members 952. However, a notch or the like may be provided in part of the frame member 951 to avoid interference with the hand of the transport robot 9307a.

[0089] The multiple support members 952 are members that support the substrate W. The multiple support members 952 include a support member group 952A that is spaced apart from one another to support a portion of the peripheral edge of the substrate W that extends along the side Wa. The support member group 952A is made up of a plurality of support members 952a. The multiple support members 952 also include a support member group 952B that is spaced apart from one another to support a portion of the peripheral edge of the substrate W that extends along the side Wb. The support member group 952B is made up of a plurality of support members 952b. The multiple support members 952 also include a support member group 952C that is spaced apart from one another to support a portion of the peripheral edge of the substrate W that extends along the side Wc. The support member group 952C is made up of a plurality of support members 952c. The multiple support members 952 also include a support member group 952D that is spaced apart from one another to support a portion of the peripheral edge of the substrate W that extends along the side Wd. The support member group 952D is made up of a plurality of support members 952d. In this embodiment, the support members 952 are plate springs. However, the support members 952 may have other structures such as pins or protrusions.

[0090] In this embodiment, the substrate W is supported by a plurality of support members 952 of the substrate support unit 950, which means that the substrate W is more likely to bend than when the substrate W is supported by the electrostatic chuck or the like. However, in this embodiment, the received light intensity is measured in a plurality of reference regions aligned with the film formation regions, as described above. This makes it possible to suppress the influence of changes in the posture (how the substrate W bends) of the substrate W on the accuracy of the reference measurement.

[0091] In this embodiment, the film thickness measurement device 9120 performs measurements in a film thickness measurement region R1 near where the substrate W is supported by the support member group 952C. Therefore, if the spacing between the multiple support members 952c becomes relatively large, there is a risk that the substrate W will bend significantly near the film thickness measurement region R1. This could affect the thickness of the film deposited in the film thickness measurement region R1. Therefore, in this embodiment, the support members 952c that make up the support member group 952C are arranged at intervals such that the variation in film thickness caused by bending of the portion of the substrate W supported by the support member group 952C is equal to or less than a threshold. This will be described in detail below.

[0092] 19(A) and 19(B) are diagrams for explaining the influence of the posture of the substrate W on the film thickness value.

[0093] 19(A) shows the variation of the film thickness value with respect to the deviation of the actual height of the substrate W when the reference height of the substrate W is set to Z=0. The reference height of the substrate W can be the height of the substrate W when it is assumed that the substrate W is not bent while being supported by the support member 952, for example. In other words, the reference height of the substrate W can be the height of the support surface of the substrate W by the support member 952. Also, the reference value d r is the thickness of a film formed on the substrate W when the deposition source 8 performs a deposition process under predetermined conditions on the substrate W at a reference height. In other words, Figure 19(A) shows that when the height of the substrate W is different, the thickness of the film actually formed on the substrate W varies even if the deposition source 8 performs a deposition process under the same conditions.

[0094] For example, when the height of the film formation position on the substrate W becomes higher than the reference height (Z>0) due to bending of the substrate W, the thickness of the film formed at the film formation position on the substrate W is equal to the reference value d r On the other hand, when the height of the film formation position on the substrate W becomes lower than the reference height (Z<0) due to the bending of the substrate W, the film thickness of the film formed at the film formation position on the substrate W becomes smaller than the reference value d r becomes larger than

[0095] 19(B) shows the variation of the film thickness value with respect to the angle of the substrate W. Here, the more the film formation position of the substrate W is tilted with respect to the horizontal state (θ=0), the more the film thickness of the film formed at the film formation position of the substrate W becomes smaller than the reference value d r It has been shown to be smaller than

[0096] 19(A) and 19(B), the slope of the approximation curve 1901 is a, the slope of the approximation curve 1902 is b, and the reference value d of the film thickness is r The amount of fluctuation Δd with respect to can be estimated by the following equation (3). Δd=aZ+bθ (3)

[0097] Thus, in order to suppress fluctuations in the film thickness value of the film formed on the substrate W, it is necessary to reduce deviations in height and angle of the substrate W. When the vicinity of the film thickness measurement region R1 is supported by the support member group 952C as in this embodiment, the spacing between the support members 952c constituting the support member group 952C may be set according to the tolerance for deviations in height and angle of the substrate W.

[0098] Specifically, the larger the interval between the support members 952c, the greater the influence of deviations in height and angle due to bending of the substrate W. That is, the maximum value Z of the deviation in height from the reference of the film formation position max and the maximum angle θ of the film formation position relative to the horizontal plane max depends on the interval L between the support members 952c. Therefore, for example, the threshold value of the allowable amount of fluctuation Δd is set to Δd th In this case, the variation in film thickness can be kept within a desired range by setting the distance L so as to satisfy the following formula (4). Δd th ≧aZ max +b θmax (4)

[0099] In addition, the maximum value Z max and maximum value θ max depends on the size and rigidity of the substrate W as well as the distance L. Therefore, the distance L may be set so that the above formula (4) is satisfied, taking these conditions into consideration.

[0100] 9. Electronic Device Manufacturing Methods Next, an example of a method for manufacturing an electronic device will be described. Below, as an example of an electronic device, the configuration of an organic EL display device and a manufacturing method thereof will be illustrated. For example, one transfer chamber 2, one terminal chamber 3, and two film formation chambers 4 shown in FIG. 1 may be treated as one cluster, and three clusters may be connected to provide first to sixth film formation chambers, which will be described later.

[0101] First, the organic EL display device to be manufactured will be described. Fig. 20(A) is an overall view of an organic EL display device 50, and Fig. 20(B) is a diagram showing the cross-sectional structure of one pixel.

[0102] 20(A), a plurality of pixels 52, each including a plurality of light-emitting elements, are arranged in a matrix in a display region 51 of an organic EL display device 50. As will be described in detail later, each of the light-emitting elements has a structure including an organic layer sandwiched between a pair of electrodes.

[0103] The term "pixel" as used herein refers to the smallest unit capable of displaying a desired color in the display region 51. In the case of a color organic EL display device, a pixel 52 is configured by a combination of multiple sub-pixels, each of which is a first light-emitting element 52R, a second light-emitting element 52G, and a third light-emitting element 52B, each of which emits light differently from one another. The pixel 52 is often configured by a combination of three types of sub-pixels: a red (R) light-emitting element, a green (G) light-emitting element, and a blue (B) light-emitting element, but is not limited to this. The pixel 52 may include at least one type of sub-pixel, preferably two or more types of sub-pixels, and more preferably three or more types of sub-pixels. The sub-pixels that make up the pixel 52 may be a combination of four types of sub-pixels: a red (R) light-emitting element, a green (G) light-emitting element, a blue (B) light-emitting element, and a yellow (Y) light-emitting element, for example.

[0104] 20(B) is a partial cross-sectional schematic diagram taken along line AB in FIG. 20(A). A pixel 52 has, on a substrate 53, a plurality of subpixels each composed of an organic EL element including a first electrode (anode) 54, a hole transport layer 55, any one of a red layer 56R, a green layer 56G, and a blue layer 56B, an electron transport layer 57, and a second electrode (cathode) 58. Of these, the hole transport layer 55, the red layer 56R, the green layer 56G, the blue layer 56B, and the electron transport layer 57 correspond to organic layers. The red layer 56R, the green layer 56G, and the blue layer 56B are formed in patterns corresponding to light-emitting elements (sometimes referred to as organic EL elements) that emit red, green, and blue light, respectively.

[0105] 20B , the hole transport layer 55 may be formed as a common layer across the plurality of sub-pixel regions, and the red layer 56R, the green layer 56G, and the blue layer 56B may be formed separately for each sub-pixel region on the hole transport layer 55. The electron transport layer 57 and the second electrode 58 may be formed separately for each sub-pixel region on the hole transport layer 55. The electron transport layer 57 and the second electrode 58 may be formed as a common layer across the plurality of sub-pixel regions on the hole transport layer 55.

[0106] In order to prevent short circuits between adjacent first electrodes 54, an insulating layer 59 is provided between the first electrodes 54. Furthermore, since the organic EL layer deteriorates due to moisture and oxygen, a protective layer 60 is provided to protect the organic EL element from moisture and oxygen.

[0107] 20(B), the hole transport layer 55 and the electron transport layer 57 are shown as a single layer, but they may be formed of multiple layers including a hole blocking layer and an electron blocking layer depending on the structure of the organic EL display element. Furthermore, a hole injection layer having an energy band structure that can smoothly inject holes from the first electrode 54 to the hole transport layer 55 may be formed between the first electrode 54 and the hole transport layer 55. Similarly, an electron injection layer may be formed between the second electrode 58 and the electron transport layer 57.

[0108] Each of the red layer 56R, green layer 56G, and blue layer 56B may be formed of a single light-emitting layer or may be formed by laminating multiple layers. For example, the red layer 56R may be formed of two layers, with the upper layer being a red light-emitting layer and the lower layer being a hole-transporting layer or an electron-blocking layer. Alternatively, the lower layer may be a red light-emitting layer and the upper layer being an electron-transporting layer or a hole-blocking layer. By providing a layer below or above the light-emitting layer in this manner, the light-emitting position in the light-emitting layer can be adjusted, and the optical path length can be adjusted, thereby improving the color purity of the light-emitting element.

[0109] Although the example of the red layer 56R is shown here, a similar structure may be adopted for the green layer 56G or the blue layer 56B. The number of layers may be two or more. Furthermore, layers of different materials may be stacked, such as a light-emitting layer and an electron-blocking layer, or layers of the same material may be stacked, such as two or more light-emitting layers.

[0110] Next, an example of a method for manufacturing an organic EL display device will be specifically described. Here, it is assumed that the red layer 56R is made up of two layers, a lower layer 56R1 and an upper layer 56R2, and the green layer 56G and the blue layer 56B are made up of a single light-emitting layer.

[0111] First, a substrate 53 is prepared on which a circuit (not shown) for driving the organic EL display device and a first electrode 54 are formed. The material of the substrate 53 is not particularly limited, and it can be made of glass, plastic, metal, etc. In this embodiment, a substrate in which a polyimide film is laminated on a glass substrate is used as the substrate 53.

[0112] A resin layer such as acrylic or polyimide is coated by bar coating or spin coating on the substrate 53 on which the first electrode 54 is formed, and the resin layer is patterned by lithography so as to form an opening in the area where the first electrode 54 is formed, thereby forming an insulating layer 59. This opening corresponds to the light-emitting region where the light-emitting element actually emits light.

[0113] The substrate 53 with the patterned insulating layer 59 is carried into a first film-forming chamber, and a hole transport layer 55 is formed as a common layer on the first electrodes 54 in the display area. The hole transport layer 55 is formed using a mask in which openings are formed for each display area 51, which will ultimately become the panel portion of each organic EL display device.

[0114] Next, the substrate 53 on which the hole transport layer 55 has been formed is carried into a second film formation chamber. The substrate 53 and a mask are aligned, and the substrate is placed on the mask. A red layer 56R is then formed on the hole transport layer 55 in the portion of the substrate 53 where the red-emitting elements are to be disposed (the region where the red subpixels are to be formed). The mask used in the second film formation chamber is a high-resolution mask with openings formed only in the regions that will become the red subpixels among the regions on the substrate 53 that will become the subpixels of the organic EL display device. As a result, the red layer 56R including the red light-emitting layer is formed only in the regions that will become the red subpixels among the regions on the substrate 53 that will become the red subpixels. In other words, the red layer 56R is selectively formed in the regions that will become the red subpixels, but not in the regions that will become the blue or green subpixels among the regions on the substrate 53 that will become the subpixels.

[0115] Similar to the formation of the red layer 56R, the green layer 56G is formed in the third film formation chamber, and then the blue layer 56B is formed in the fourth film formation chamber. After the formation of the red layer 56R, green layer 56G, and blue layer 56B is completed, the electron transport layer 57 is formed over the entire display area 51 in the fifth film formation chamber. The electron transport layer 57 is formed as a layer common to the three color layers 56R, 56G, and 56B.

[0116] The substrate on which the layers up to the electron transport layer 57 have been formed is moved to a sixth film-forming chamber, where the second electrode 58 is formed. In this embodiment, each layer is formed by vacuum deposition in the first to sixth film-forming chambers. However, the present invention is not limited to this, and for example, the second electrode 58 in the sixth film-forming chamber may be formed by sputtering. Thereafter, the substrate on which the layers up to the second electrode 58 have been formed is moved to a sealing device, and the protective layer 60 is formed by plasma CVD (sealing step), thereby completing the organic EL display device 50. Note that although the protective layer 60 is formed by the CVD method here, the method is not limited thereto, and it may also be formed by the ALD method or the inkjet method.

[0117] Here, the films are formed in the first to sixth film formation chambers using masks having openings corresponding to the patterns of the respective layers to be formed. When forming the films, the relative positions of the substrate 53 and the masks are adjusted (aligned), and then the substrate 53 is placed on the mask and film formation is performed.

[0118] <10.Other> The present invention can also be realized by supplying a program that realizes one or more functions of the above-described embodiments to a system or device via a network or a storage medium, and having one or more processors in the computer of the system or device read and execute the program. It can also be realized by a circuit (e.g., ASIC) that realizes one or more functions.

[0119] The invention is not limited to the above-described embodiment, and various modifications and variations are possible within the scope of the gist of the invention. [Explanation of symbols]

[0120] 1: film forming device, 5A-5B: transport unit, 6A-6D: carrier, 7A-7B: moving unit, 63: mask holding unit

Claims

1. provided in a film formation chamber where a film is formed on a substrate or in a delivery chamber for delivering the substrate to the film formation chamber, a light receiving section that receives light that is emitted by an emitting section that emits light to the substrate and is reflected by the substrate; and a determination unit that determines a thickness of a film formed on the film formation region of the substrate based on a light receiving result of the light receiving unit, the specifying means specifies a thickness of the film formed in the film formation region based on the light reception results of the reflected light reflected in the film formation region where the film is formed, and the reflected light reflected in a first reference region and a second reference region aligned in a first direction with the film formation region of the substrate; A film thickness measuring device characterized by:

2. 2. The film thickness measurement device according to claim 1, The specifying unit specifies a thickness of the film formed in the film formation region based on the light reception results for the reflected light reflected in the film formation region provided between the first reference region and the second reference region in the first direction of the substrate, the reflected light reflected in the first reference region, and the reflected light reflected in the second reference region. A film thickness measuring device characterized by:

3. 3. The film thickness measurement device according to claim 2, the specifying means specifies the film thickness based on the light receiving results for the reflected light reflected at the film formation region provided between the first reference region and the second reference region in the first direction of the substrate, and between a third reference region of the substrate and a fourth reference region of the substrate in a second direction intersecting the first direction, the reflected light reflected at the first reference region, the reflected light reflected at the second reference region, the reflected light reflected at the third reference region, and the reflected light reflected at the fourth reference region; A film thickness measuring device characterized by:

4. 2. The film thickness measurement device according to claim 1, A light source and an optical fiber connecting the light source and the emission unit; a moving unit that moves the light emitting unit and the light receiving unit in the first direction, A film thickness measuring device characterized by:

5. 5. The film thickness measurement device according to claim 1, the specifying means specifies a thickness of the film formed in the film formation region based on the light reception result of the reflected light reflected in the film formation region, which is a region for measuring film thickness provided separately from a region where a film is formed to form a display element of an electronic device. A film thickness measuring device characterized by:

6. A film forming apparatus equipped with the film thickness measurement device according to claim 5, a substrate support unit that supports the substrate with a plurality of support members; the light receiving unit receives reflected light of emitted light reflected by the substrate in a state supported by the substrate support unit; A film forming apparatus characterized by:

7. 7. The film forming apparatus according to claim 6, the substrate has a rectangular shape including a first side and a second side opposite to the first side, The plurality of support members include: a first support member group in which each support member is spaced apart from one another so as to support a portion of the peripheral edge of the substrate along the first side; a second support member group in which each support member is provided spaced apart from one another so as to support a portion of the peripheral edge portion along the second side, a region where a film is to be deposited to form a display element of the electronic device is located between the first support member group and the second support member group while the substrate is supported by the substrate support section; A film forming apparatus characterized by:

8. The film forming apparatus according to claim 7, the substrate includes a third side connecting the first side and the second side, the deposition region is provided between an area where a film is deposited to form a display element of the electronic device and the third side; A film forming apparatus characterized by:

9. 9. The film forming apparatus according to claim 8, the third side is a short side of the substrate; A film forming apparatus characterized by:

10. 10. The film forming apparatus according to claim 9, the plurality of support members include a third support member group in which each support member is provided spaced apart from one another so as to support a portion of the peripheral edge portion along the third side; A film forming apparatus characterized by:

11. The film forming apparatus according to claim 10, the support members constituting the third support member group are provided at intervals such that a variation in film thickness caused by deflection of the portion of the substrate supported by the third support member group is equal to or less than a threshold value; A film forming apparatus characterized by:

12. A film forming apparatus equipped with the film thickness measurement device according to any one of claims 1 to 4, a substrate support unit that adsorbs and supports the substrate by electrostatic force; the light receiving unit receives reflected light of emitted light reflected by the substrate in a state supported by the substrate support unit; A film forming apparatus characterized by:

13. a light receiving step of receiving light that is emitted to the substrate and reflected by the substrate in a film formation chamber where a film is formed on the substrate or in a delivery chamber for delivering the substrate to the film formation chamber; a determination step of determining a film thickness of the film formed on the film formation region of the substrate based on a result of light reception in the light reception step, In the identifying step, a thickness of the film formed in the film formation region is identified based on the light receiving results of the reflected light reflected in the film formation region where the film is formed and the reflected light reflected in a first reference region and a second reference region aligned in a first direction with the film formation region of the substrate. A film thickness measurement method characterized by:

14. a film forming step of forming a film on a substrate; a measuring step of measuring the thickness of the film formed on the substrate in the film forming step by the film thickness measuring method according to claim 13, 1. A method for manufacturing an electronic device comprising the steps of:

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