Joining system and joining method

Abstract

To provide a bonding system and a bonding method that suppress the occurrence of bonding defects between a first object to be bonded and a second object to be bonded.SOLUTION: An activation treatment device 60 of a chip bonding system positions a sheet TE to which a chip CP is attached in an orientation in which a bonding surface CPf of the chip CP faces vertically downward, irradiates the bonding surface CPf of the chip CP with a particle beam from a particle beam source 61 arranged vertically below the chip CP, and then inverts the sheet TE to which the chip CP is attached such that the bonding surface CPf of the chip CP faces vertically upward to irradiate the bonding surface CPf of the chip CP with radicals from a radical source 67 arranged vertically above the chip CP.SELECTED DRAWING: Figure 5

Description

[Technical Field]

[0001] The present invention relates to a joining system and a joining method. [Background technology]

[0002] A method has also been proposed in which the bonding surfaces of two objects to be bonded are subjected to plasma treatment, and then the bonding surfaces of the two objects are brought into contact with each other to bond them (see, for example, Patent Document 1). Here, the plasma treatment is carried out by exposing the objects to any of oxygen, argon, NH3, and CF4RIE (Reactive Ion Etching) plasma. A method is now being provided in which the bonding surface of a chip to be bonded to a substrate is subjected to plasma treatment, and then the bonding surface of the chip is brought into contact with the substrate to bond the chip to the substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Special Publication No. 2003-523627 Summary of the Invention [Problem to be solved by the invention]

[0004] However, the method described in Patent Document 1 may result in poor bonding between the chip and the substrate.

[0005] The present invention has been made in view of the above circumstances, and has an object to provide a bonding system and a bonding method that can suppress the occurrence of poor bonding between a first object and a second object. [Means for solving the problem]

[0006] In order to achieve the above object, the joint system according to the present invention comprises: A joining system for joining a second object to a first object, a particle beam source for irradiating a bonding surface of the second object with a particle beam to activate the bonding surface of the second object; nitrogen and a radical source that activates the bonding surface of the second object to be bonded by irradiating radicals, and after performing activation processing of the bonding surface of the second object to be bonded by the particle beam irradiated from the particle beam source, nitrogen an activation treatment device that performs activation treatment on the bonding surface of the second object to be bonded by radicals; a bonding device that bonds the second object to the first object by bringing the second object, the bonding surface of which has been activated by the activation treatment device, into contact with the first object, The activation treatment device places the second object to be bonded in a position where the bonding surface of the second object faces vertically downward, irradiates the particle beam from the particle beam source placed vertically below the second object to the bonding surface of the second object to be bonded, and then turns the second object to a position where the bonding surface of the second object faces vertically upward, and then irradiates the particle beam from the radical source placed vertically above the second object to the bonding surface of the second object to be bonded. nitrogen Radicals are irradiated.

[0007] From another aspect, the bonding method according to the present invention comprises: A joining method for joining a second object to a first object, comprising: a first activation step of activating a bonding surface of the second object to be bonded by irradiating at least the bonding surface of the second object to be bonded with a particle beam; After the first activation step, the bonding surface of the second object to be bonded is nitrogen a second activation step of irradiating with radicals; a bonding step of bonding the second object to be bonded to the first object to be bonded by bringing the second object to be bonded, the bonding surface of which has been activated, into contact with the first object to be bonded, In the first activation step, the second object to be bonded is placed in a position where a bonding surface of the second object to be bonded faces vertically downward, and the particle beam is irradiated onto the bonding surface of the second object to be bonded from vertically downward; After the first activation step, the second object to be bonded is inverted so that the bonding surface of the second object to be bonded faces vertically upward, and then, in the second activation step, the bonding surface of the second object to be bonded is inverted so that the bonding surface of the second object to be bonded faces vertically upward. nitrogen Radicals are irradiated. [Effects of the Invention]

[0008] According to the present invention, the occurrence of poor bonding between the first and second objects to be bonded is suppressed. [Brief explanation of the drawings]

[0009] [Figure 1] 1 is a schematic configuration diagram of a tip joining system according to an embodiment of the present invention. [Figure 2] 1 is a schematic configuration diagram of a part of a chip joining system according to an embodiment, seen from the side; [Figure 3A] FIG. 2 is a plan view of a tip holding portion according to the embodiment. [Figure 3B] 1 is a cross-sectional view showing a part of a chip transport device according to an embodiment. [Figure 4A] 1 is a cross-sectional view showing a head of a bonding apparatus according to an embodiment. [Figure 4B] FIG. 2 is a plan view showing a head of the bonding apparatus according to the embodiment. [Figure 5] 1 is a schematic configuration diagram of an activation treatment apparatus according to an embodiment; [Figure 6] 10A and 10B are diagrams illustrating the operation of the activation processing apparatus according to the embodiment; [Figure 7] FIG. 2 is a block diagram showing a control unit according to the embodiment. [Figure 8] 1 is a flowchart showing an example of the flow of a chip bonding method according to an embodiment. [Figure 9A]1 is a schematic side view showing a state in which a particle beam is irradiated in an activation treatment apparatus according to an embodiment. [Figure 9B] 1 is a schematic plan view showing a state in which a particle beam is irradiated in an activation treatment apparatus according to an embodiment. FIG. [Figure 10A] 10 is a schematic side view showing a state in which a sheet is turned over in the activation treatment device according to the embodiment. FIG. [Figure 10B] 1 is a schematic side view showing a state in which nitrogen radicals are irradiated in an activation treatment apparatus according to an embodiment. FIG. [Figure 11A] 1 is a schematic plan view showing how chips are supplied from a chip supply unit in a chip joining system according to an embodiment. FIG. [Figure 11B] 1 is a schematic side view showing how chips are supplied from a chip supply unit in a chip joining system according to an embodiment. FIG. [Figure 12A] 10 is a schematic plan view showing how a chip is transferred from a chip transport unit to a head in the chip joining system according to the embodiment. FIG. [Figure 12B] 10 is a schematic side view showing how a chip is transferred from a chip transport unit to a head in the chip joining system according to the embodiment. FIG. [Figure 13] FIG. 10 is a schematic configuration diagram of an activation treatment apparatus according to a comparative example. [Figure 14A] FIG. 10 is a schematic view showing a state before a holding frame is moved in a support portion of a cleaning device according to a modified example. [Figure 14B] FIG. 10 is a schematic view showing a state in which a holding frame is moved in a support portion of a cleaning device according to a modified example. [Figure 14C] 10 is a schematic diagram illustrating a state in which a frame support portion and an inner support portion of a support portion of a cleaning device according to a modified example are rotated. FIG. [Figure 15A] FIG. 10 is a schematic view of a substrate to be diced according to a modified example. [Figure 15B] FIG. 10 is a schematic diagram of a chip CP according to a modified example. [Figure 16A] FIG. 10 is a schematic cross-sectional view of a tip holding portion according to a modified example. [Figure 16B]FIG. 10 is a schematic cross-sectional view of a tip holding portion according to a modified example. [Figure 17A] FIG. 10 is a schematic diagram showing a part of a bonding apparatus according to a modified example. [Figure 17B] FIG. 10 is a schematic diagram showing a part of a bonding apparatus according to a modified example. [Figure 17C] FIG. 10 is a schematic diagram showing a part of a bonding apparatus according to a modified example. DETAILED DESCRIPTION OF THE INVENTION

[0010] A chip bonding system according to an embodiment of the present invention will be described below with reference to the drawings. The chip bonding system according to this embodiment is a system for mounting a chip on a substrate. Here, the substrate corresponds to the first object to be bonded, and the chip corresponds to the second object to be bonded. Examples of the chip include semiconductor chips supplied from a diced substrate. Examples of the chip include chips with only an insulating material exposed on the bonding surface to be bonded to the substrate, or chips with both an insulating material and a conductive material exposed. Examples of the insulating material include oxides such as SiO2 and Al2O3, nitrides such as SiN and AlN, oxynitrides such as SiON, and resins. Examples of the conductive material include semiconductor materials such as Si and Ge, and metals such as Cu, Al, and solder. In other words, the chip may have multiple regions made of different materials on its bonding surface. Specifically, the chip may have an electrode and an insulating film on its bonding surface, and the insulating film may be made of an oxide such as SiO2 or Al2O3 or a nitride such as SiN or AlN. This chip bonding system activates the mounting surface of the substrate and the bonding surface of the chip, then bonds the chip to the substrate by contacting or applying pressure, and then, or simultaneously, heating the chip to firmly bond it to the substrate.

[0011] As shown in FIG. 1, the chip bonding system 1 according to this embodiment includes a chip supply device 10, a chip transport device 39, a bonding device 30, an activation processing device 60, a transport device 70, a carry-in / out unit 80, a cleaning device 85, and a control unit 90. The transport device 70 includes a transport robot 71 having an arm that holds a holding frame 112 that holds a substrate WT or a sheet TE to which chips CP are attached. Here, the sheet TE is made of, for example, resin. As indicated by arrow AR11 in FIG. 1, the transport robot 71 can move the holding frame 112 that holds the substrate WT or the sheet TE to which chips CP are attached, received from the carry-in / out unit 80, to positions where it transfers the holding frame 112 to each of the activation processing device 60, the cleaning device 85, the bonding device 30, and the chip supply device 10. Here, the holding frame 112 that holds the sheet TE to which chips CP are attached corresponds to the target object containing the chips CP.

[0012] When the transfer robot 71 receives the substrate WT from the carry-in / out unit 80, it moves to a position where it will be transferred to the activation processing device 60 while holding the received substrate WT, and transfers the substrate WT to the activation processing device 60. After the activation processing of the mounting surface WTf of the substrate WT is completed in the activation processing device 60, the transfer robot 71 receives the substrate WT from the activation processing device 60 and transfers the received substrate WT to the cleaning device 85. After the cleaning device 85 completes water cleaning of the substrate WT, the transfer robot 71 receives the substrate WT from the cleaning device 85, inverts the substrate WT while holding the received substrate WT, and then moves to a position where it will be transferred to the bonding device 30. The transfer robot 71 then transfers the substrate WT to the bonding device 30.

[0013] Furthermore, when the transfer robot 71 receives the holding frame 112 holding the sheet TE to which the chips CP are attached from the carry-in / out unit 80, it moves the received holding frame 112 while grasping it to a position where the holding frame 112 will be transferred to the activation processing device 60, and transfers the holding frame 112 to the activation processing device 60. Furthermore, after the activation processing of the bonding surfaces of the chips CP attached to the sheet TE is completed in the activation processing device 60, the transfer robot 71 receives the holding frame 112 from the activation processing device 60 and transfers the received holding frame 112 to the chip supply device 10. Furthermore, a HEPA (High Efficiency Particulate Air) filter (not shown), for example, is installed inside the transfer device 70. As a result, the inside of the transfer device 70 is maintained in an atmospheric pressure environment with extremely few particles.

[0014] The cleaning device 85 has a stage 852 that supports the substrate WT, a stage driver 853 that drives and rotates the stage 852, and a cleaning head 851 that is disposed vertically above the stage 852 and ejects water vertically downward. The cleaning device 85 rotates the stage 852 by the stage driver 853 with the substrate WT supported on the stage 852, and ejects water from the cleaning head 851 toward the substrate WT, thereby cleaning the substrate WT with water.

[0015] The chip supply device 10 is a second bonded object supply device that cuts out one chip CP from multiple chips CPs created by dicing a substrate and supplies the chip CP to the bonding device 30. Dicing refers to a process of cutting a substrate incorporating multiple electronic components into chips in the vertical and horizontal directions. The chip CP may have multiple regions made of different materials formed on its bonding surface CPf. That is, the bonding surface CPf of the chip CP may have a region made of an insulating material and a region made of metal. As shown in FIG. 2 , the chip supply device 10 includes a chip supply unit 11. The chip supply unit 11 includes a holding frame 112 that holds a sheet TE to which multiple chips CPs are attached, a frame holding unit 119 that holds the holding frame 112, a pickup mechanism 111 that picks up one chip CP from the multiple chips CPs, and a cover 114. The chip supply unit 11 also includes a holding frame driving unit 113 that drives the holding frame 112 in the XY directions or in a rotational direction around the Z axis. The frame holding unit 119 holds the holding frame 112 in an orientation in which the surface of the sheet TE to which the plurality of chips CP are attached faces vertically upward (in the +Z direction). The holding frame 112 and the frame holding unit 119 constitute a sheet holding unit that holds the sheet TE, to which the plurality of chips CP are attached on the side opposite to the bonding surface CPf, in an orientation in which the bonding surface CPf faces vertically upward.

[0016] The pickup mechanism 111 separates one of the chips CP from the sheet TE by cutting out the chip CP from the side opposite the chips CP. The pickup mechanism 111 holds a peripheral portion, which is a third portion different from a central portion, which is a first portion held by a head 33H (described later), on the side opposite the bonding surface CPf of the chip CP, to separate the chip CP. The pickup mechanism 111 has a needle 111a and is movable in the vertical direction as indicated by arrow AR14 in FIG. 2. The cover 114 is disposed so as to cover the chips CP vertically above, and has a hole 114a formed in a portion facing the pickup mechanism 111. The number of needles 111a is, for example, four. However, the number of needles 111a may be three, five, or more. The pickup mechanism 111 supplies chips CP by piercing the sheet TE with a needle 111a from vertically below (-Z direction) the sheet TE and lifting the chips CP vertically upward (+Z direction). Then, each chip CP attached to the sheet TE is pushed upward by the needle 111a through a hole 114a in the cover 114 one by one, and is delivered to the chip transport device 39. The holding frame driving unit 113 drives the holding frame 112 in the XY direction or in a direction rotating around the Z axis, thereby changing the position of the chip CP located vertically below the needle 111a.

[0017] The chip transport device (also referred to as a turret) 39 is a second object transport device that transports chips CP supplied from the chip supply unit 11 to a transfer position Pos1 where the chips CP are transferred to the head 33H of the bonding unit 33 of the bonding apparatus 30. As shown in FIG. 1 , the chip transport device 39 has two long plates 391, an arm 394, a chip holder 393 provided at the tip of the arm 394, and a plate drive unit 392 that simultaneously rotates the two plates 391. The two plates 391 are long rectangular boxes, and one end of each plate 391 rotates around the other end located between the chip supply unit 11 and the head 33H. The two plates 391 are arranged, for example, so that their longitudinal directions form a 90-degree angle with each other. The number of plates 391 is not limited to two and may be three or more.

[0018] As shown in FIG. 3A, the chip holding unit 393 is a second object-to-be-bonded holding unit provided at the tip of an arm 394 and having two legs 393a for holding the chip CP. As shown in FIG. 3B, the plate 391 can accommodate a long arm 394 inside. An arm driving unit 395 for driving the arm 394 along the longitudinal direction of the plate 391 is provided inside the plate 391. This allows the chip transport device 39 to use the arm driving unit 395 to place the tip of the arm 394 in a state where it protrudes outside the plate 391 or is retracted inside the plate 391. When rotating the plate 391, the chip transport device 39 retracts the arm 394 into the plate 391, as indicated by arrow AR25 in FIG. 3B, to store the chip holding unit 393 inside the plate 391. This suppresses particle adhesion to the chip CP during transport. The two legs 393a may be provided with suction grooves (not shown). In this case, the chip CP is sucked and held by the legs 393a, so that the chip CP can be transported without being displaced. Furthermore, a protrusion (not shown) may be provided at the tip of the legs 393a to prevent the chip CP from flying out due to centrifugal force generated when the plate 391 rotates.

[0019] 1, the pickup mechanism 111 and the head 33H are disposed in positions in the Z-axis direction that overlap with a locus OB1 drawn by the tip of the arm 394 when the plate 391 rotates. When the chip transport device 39 receives the chip CP from the pickup mechanism 111, it rotates the plate 391 around the axis AX as shown by the arrow AR1 in FIG. 1 to transport the chip CP to a transfer position Pos1 where the chip CP overlaps with the head 33H.

[0020] The bonding apparatus 30 is a chip bonding apparatus including a stage unit 31, a bonding section 33 having a head 33H, and a head driver 36 for driving the head 33H. The head 33H includes a chip tool 411, a head main body 413, a chip support 432a, and a support driver 432b, as shown in FIG. 4A. The chip tool 411 is made of, for example, silicon (Si). The head main body 413 includes a holding mechanism 440 having a suction section for suction-holding the chip CP to the chip tool 411, and a suction section (not shown) for fixing the chip tool 411 to the head main body 413 by vacuum suction. The head main body 413 also includes a ceramic heater, a coil heater, or the like. The chip tool 411 includes a through-hole 411a formed at a position corresponding to the holding mechanism 440 of the head main body 413, and a through-hole 411b into which the chip support 432a is inserted.

[0021] The chip support portion 432a is, for example, a cylindrical suction post, and is a component support portion that is provided at the tip of the head 33H and is movable in the vertical direction. The chip support portion 432a supports the center portion, which is a first portion, on the side opposite to the bonding surface CPf of the chip CP. For example, as shown in FIG. 4B, one chip support portion 432a is provided in the center portion.

[0022] The support part driving part 432b drives the chip support part 432a in the vertical direction and, with the chip CP placed on the tip of the chip support part 432a, reduces the pressure inside the chip support part 432a, thereby adsorbing the chip CP to the tip of the chip support part 432a. The support part driving part 432b positions the chip holding part 393 of the chip transport device 39, holding the chip CP, at a transfer position for the head 33H (see Pos1 in FIG. 1), and, with the tip of the chip support part 432a supporting the center of the chip CP, moves the chip support part 432a vertically upward from the chip holding part 393. As a result, the chip CP is transferred from the chip holding part 393 of the chip transport device 39 to the head 33H.

[0023] The head driver 36 moves the head 33H holding the chip CP transferred at the transfer position Pos1 (see FIG. 2 ) vertically upward (in the +Z direction) to bring the head 33H closer to the stage 315 and mount the chip CP on the mounting surface WTf of the substrate WT. More specifically, the head driver 36 moves the head 33H holding the chip CP vertically upward (in the +Z direction) to bring the head 33H closer to the stage 315 and bring the chip CP into contact with the mounting surface WTf of the substrate WT to bond it to the substrate WT. Here, the mounting surface WTf of the substrate WT and the bonding surface CPf of the chip CP to be bonded to the substrate WT have been activated by the activation processing device 60. Furthermore, after the activation processing, the mounting surface WTf of the substrate WT has been cleaned with water by the cleaning device 85. Therefore, by bringing the bonding surface CPf of the chip CP into contact with the mounting surface WTf of the substrate WT, the chip CP is hydrophilically bonded to the substrate WT via hydroxyl groups (OH groups).

[0024] The stage unit 31 has a stage 315 that holds the substrate WT in an orientation in which the mounting surface WTf of the substrate WT on which the chips CP are mounted faces vertically downward (-Z direction), and a stage driving unit 320 that drives the stage 315. The stage 315 can move in the X direction, Y direction, and rotational direction. This makes it possible to change the relative positional relationship between the bonding unit 33 and the stage 315, and to adjust the mounting position of each chip CP on the substrate WT.

[0025] The activation processing device 60 performs activation processing on the mounting surface WTf of the substrate WT or the bonding surface CPf of the chip CP. The activation processing device 60 performs activation processing on the holding frames 112 holding the sheet TE to which the substrate WT or chip CP is attached, without placing them opposite each other. That is, the activation processing device 60 does not perform activation processing on the holding frames 112 holding two substrates WT or two sheets TE to which two chips CP are attached, while placing them opposite each other. If the holding frames 112 were placed opposite each other, the material of one substrate WT or chip CP would adhere to the other chip CP or substrate WT, resulting in mixing of the materials. As shown in FIG. 5 , the activation processing device 60 includes a chamber 64, a support unit 62 supporting the holding frame 112, a particle beam source 61, a beam source transport unit 63, and a radical source 67. The chamber 64 is connected to a vacuum pump 652 via an exhaust pipe 651. When the vacuum pump 652 is operated, the gas inside the chamber 64 is exhausted to the outside of the chamber 64 through the exhaust pipe 651, and the air pressure inside the chamber 64 is reduced (decompressed).

[0026] The support unit 62 has a frame-shaped frame holding unit 621 that holds the holding frame 112 on its inside, a cover 622, and a frame holding unit drive unit 623 that supports the frame holding unit 621 and rotates the frame holding unit 621 around an axis perpendicular to its thickness direction, as indicated by arrow AR33 in FIG. 5 . The support unit 62 corresponds to an object support unit that supports the holding frame 112 that holds the sheet TE to which the target chips CP are attached. A chip holding unit that holds the chips CP is also configured. When a substrate WT is inserted, the support unit 62 supports the substrate WT by holding the periphery of the substrate WT with the frame holding unit 621. The support unit 62 supports the holding frame 112 that holds the sheet TE to which the chips CP are attached, without arranging it opposite to the holding frame 112, with the holding frame 112 set on one processing surface. The cover 622 is formed of, for example, glass, and covers the holding frame 112 and an area outside the portion of the sheet TE on one side where the chips CP are attached, when the holding frame 112, which holds the sheet TE on which the chips CP are attached, is held by the frame holding unit 621. Here, if multiple chips CP are obtained by dicing a substrate (not shown) that is circular in plan view, the chips CP are attached to the circular area of ​​the sheet TE in plan view. In this case, the cover 622 is shaped to cover the area outside the circular area of ​​the sheet TE on which the multiple chips CP are attached in plan view. This prevents the particle beam source 61 from irradiating the sheet TE with a particle beam other than the portion on which the chips CP are attached.

[0027] The particle beam source 61 is, for example, a fast atom beam (FAB) source, and includes a discharge chamber 612, an electrode 611 disposed within the discharge chamber 612, a beam source driver 613, and a gas supplier 614 for supplying nitrogen gas into the discharge chamber 612. The peripheral wall of the discharge chamber 612 is provided with a FAB outlet 612a for emitting neutral atoms. The discharge chamber 612 is made of a carbon material. The discharge chamber 612 has a long box shape, with multiple FAB outlets 612a aligned in a straight line along its longitudinal direction. The beam source driver 613 includes a plasma generator (not shown) for generating nitrogen gas plasma within the discharge chamber 612, and a DC power supply (not shown) for applying a DC voltage between the electrode 611 and the peripheral wall of the discharge chamber 612. The beam source driver 613 applies a DC voltage between the peripheral wall of the discharge chamber 612 and the electrode 611 while generating plasma of nitrogen gas in the discharge chamber 612. At this time, nitrogen ions in the plasma are attracted to the peripheral wall of the discharge chamber 612. At this time, the nitrogen ions heading toward the FAB emission port 612a receive electrons from the peripheral wall of the discharge chamber 612, which is made of a carbon material and is located on the outer periphery of the FAB emission port 612a, as they pass through the FAB emission port 612a. These nitrogen ions then become electrically neutralized nitrogen atoms and are emitted outside the discharge chamber 612. However, some of the nitrogen ions are unable to receive electrons from the peripheral wall of the discharge chamber 612 and are emitted outside the discharge chamber 612 as nitrogen ions.

[0028] Here, the particle beam source 61 is set so that the angle of incidence of the particle beam with respect to a virtual plane S1 including at least one of the bonding surfaces CPf of at least one chip CP attached to the sheet TE is 30 degrees or more and 80 degrees or less. That is, the angle (incident angle) θ1 between the irradiation axis J1 of the particle beam and the normal direction N1 of the virtual plane S1 is set so that it is 30 degrees or more and 80 degrees or less. Furthermore, as shown in FIG. 6, the incident angle θ1 of the particle beam is set so that the relational expression of the following formula (1) holds when the interval between adjacent chips CP is L1 and the thickness of the chip CP is T1.

[0029]

number

[0030] This prevents the particle beam from being directly irradiated onto the sheet TE, thereby preventing impurities from being generated from the sheet TE due to the particle beam being irradiated onto the sheet TE, which has the advantage of preventing damage to the bonding surface CPf of the chip CP caused by the impurities generated from the sheet TE.

[0031] The beam source transport unit 63 includes a long support rod 631 that is inserted into a hole 64a in the chamber 64 and supports the particle beam source 61 at one end, a support 632 that supports the support rod 631 at the other end, and a support driver 633 that drives the support 632. The beam source transport unit 63 also includes a bellows 634 that is interposed between the outer periphery of the hole 64a in the chamber 64 and the support 632 to maintain the vacuum level in the chamber 64. The support driver 633 drives the support 632 in a direction that inserts and removes the support rod 631 into and from the chamber 64, as indicated by arrow AR31 in FIG. 5, thereby changing the position of the particle beam source 61 within the chamber 64 as indicated by arrow AR32 in FIG. 5. The beam source transport unit 63 moves the particle beam source 61 in a direction perpendicular to the arrangement direction of its multiple FAB emission ports 612a.

[0032] As described above, the particle beam source 61 has a plurality of FAB emission ports 612a arranged in a straight line. The particle beam source 61 is moved in a direction perpendicular to the arrangement direction of the plurality of FAB emission ports 612a. As a result, the shape of the area irradiated with the particle beam becomes rectangular. On the other hand, if a plurality of chips CP are diced from a substrate (not shown) that is circular in plan view, they are attached to a circular area in plan view on the sheet TE. Therefore, to irradiate the entire plurality of chips CP attached to the sheet TE with the particle beam, it is necessary to set the area irradiated with the particle beam to a rectangular area including the circular area in plan view to which the plurality of chips CP are attached. In this case, without the aforementioned cover 622, the particle beam is irradiated to the area outside the plurality of chips CP on the sheet TE or the holding frame 112, which makes it easier for impurities to be generated from the sheet TE. In contrast, in this embodiment, the cover 622 covers the area outside the plurality of chips CP on the sheet TE or the holding frame 112. This blocks the particle beam from being irradiated onto the area outside the plurality of chips CP on the sheet TE or onto the holding frame 112, thereby suppressing the generation of impurities from the sheet TE or the holding frame 112.

[0033] The radical source 67 may be an ICP (Inductively Coupled Plasma) plasma source having a plasma chamber 671, a glass window 674, a trap plate 675, a waveguide 673, and a magnetron 672. The plasma chamber 671 is connected to the waveguide 673 via the glass window 674. The radical source 67 also has a gas supply unit 677 that supplies nitrogen gas into the plasma chamber 671 via a supply pipe 676. Microwaves generated by the magnetron 672 are introduced into the plasma chamber 671 through the waveguide 673. The magnetron 672 may be one that generates microwaves with a frequency of, for example, 2.45 GHz. In this case, the power supplied from the magnetron 672 to the plasma chamber 671 is set to, for example, 2.5 kW. When microwaves are introduced from the waveguide 673 while nitrogen gas is introduced into the plasma chamber 671, a plasma PLM is formed in the plasma chamber 671 by the microwaves. The trap plate 675 traps ions contained in the plasma PLM and allows only radicals to flow down into the chamber 64. In other words, plasma is generated in the plasma chamber 671, and only radicals contained in the plasma flow down below the plasma chamber 671.

[0034] The radical source 67 is not limited to a configuration including a magnetron 672 and a waveguide 673, but may also include, for example, a configuration including a plate electrode provided on a glass window 674 and a high-frequency power supply electrically connected to the plate electrode. In this case, the high-frequency power supply may be one that applies a high-frequency bias of, for example, 27 MHz. The power supplied from the high-frequency power supply to the plasma chamber 671 is set to, for example, 250 W. When irradiating the particle beam, the pressure inside the chamber 64 is evacuated to the 10-3 Pa range using, for example, a turbomolecular pump. However, during radical treatment, the pressure inside the chamber 64 is increased to approximately several tens of Pa.

[0035] The control unit 90 includes an MPU (Micro Processing Unit), a main memory, an auxiliary memory, an interface, and a bus connecting each unit. The main memory is configured as a volatile memory and is used as a work area for the MPU. The auxiliary memory is configured as a nonvolatile memory and stores programs executed by the MPU. The auxiliary memory also stores information indicating a first distance and a second distance, which will be described later. As shown in FIG. 7 , the control unit 90 is connected to the head driver 36, the stage driver 320, the plate driver 392, the arm driver 395, the pickup mechanism 111, the holder frame driver 113, the cleaning head 851, the stage driver 853, the beam source driver 613, the beam source transport unit 63, the frame holder driver 623, the magnetron 672, and the transport robot 71. The MPU then loads the program stored in the auxiliary memory into the main memory and executes it, thereby outputting control signals via the interface to the head driver 36, stage driver 320, plate driver 392, arm driver 395, pickup mechanism 111, holding frame driver 113, cleaning head 851, stage driver 853, beam source driver 613, beam source transport unit 63, frame holder driver 623, magnetron 672, and transport robot 71.

[0036] Next, the operation of the chip bonding system 1 according to this embodiment will be described with reference to FIGS. 8 to 12. It is assumed that the substrate WT and the holding frame 112 holding the sheet TE to which the chips CP are attached are loaded from the loading / unloading unit 80. First, as shown in FIG. 8, the chip bonding system 1 loads the substrate WT loaded from the loading / unloading unit 80 into the activation processing device 60, thereby executing a substrate mounting surface activation process (step S1), in which an activation process is performed on the mounting surface WTf of the substrate WT. Here, the activation processing device 60 first supports the substrate WT on the support 62 with the mounting surface WTf facing vertically downward, and then irradiates the mounting surface WTf with a particle beam containing nitrogen atoms from the particle beam source 61. At this time, the power supplied to the particle beam source 61 is set to, for example, 1 kV and 100 mA. The flow rate of nitrogen gas introduced into the discharge chamber 612 of the particle beam source 61 is set to, for example, 100 sccm. The particle beam source 61 then irradiates the mounting surface WTf of the substrate WT with a particle beam while reciprocating at a speed of 1.2 to 14.0 mm / sec. Next, the activation treatment device 60 inverts the substrate WT held by the frame holder 621 so that the mounting surface WTf of the substrate WT faces vertically upward. The activation treatment device 60 then irradiates the mounting surface WTf of the substrate WT with nitrogen radicals from the radical source 67. The power supplied from the magnetron 672 of the radical source 67 to the plasma chamber 671 is set to, for example, 2.5 kW. When the radical source 67 includes a plate electrode provided on the glass window 674 and a high-frequency power supply electrically connected to the plate electrode, the power supplied from the high-frequency power supply to the plasma chamber 671 is set to, for example, 250 W. The flow rate of nitrogen gas introduced into the plasma chamber 671 is set to, for example, 100 sccm. Furthermore, the duration of irradiation of the mounting surface WTf of the substrate WT with radicals is set to, for example, 15 seconds. For example, when metal electrodes and insulating films are provided on both the mounting surface WTf of the substrate WT and the bonding surface CPf of the chip CP, it is preferable to irradiate the mounting surface WTf of the substrate WT with a particle beam.

[0037] Next, the chip bonding system 1 loads the substrate WT that has been subjected to the activation process from the activation processing device 60 into the cleaning device 85, and executes a water cleaning step of cleaning the mounting surface WTf of the substrate WT with water (step S2). Here, the cleaning device 85 cleans the substrate WT with water by ejecting water from the cleaning head 851 toward the substrate WT while rotating the stage 852 with the substrate WT supported on the stage 852 using the stage driving unit 853. As a result, a relatively large number of hydroxyl groups (OH groups) or water molecules adhere to the mounting surface WTf of the substrate WT.

[0038] Next, the chip bonding system 1 executes a substrate preparation step in which the substrate WT is held on the stage 315 of the bonding apparatus 30 to prepare for bonding the chip CP to the substrate WT (step S3). At this time, the transfer robot 71 receives the substrate WT from the cleaning apparatus 85 with its mounting surface WTf facing vertically upward. The transfer robot 71 then inverts the received substrate WT and holds the substrate WT with its mounting surface WTf facing vertically downward. The transfer robot 71 then transfers the substrate WT to the stage 315 of the bonding apparatus 30 with its mounting surface WTf facing vertically downward.

[0039] Thereafter, the chip bonding system 1 performs a chip bonding surface activation step (step S4) by loading the holding frame 112 holding the sheet TE to which the chips CP are attached, which is loaded from the loading / unloading unit 80, into the activation processing device 60. The activation processing device 60 first causes the support unit 62 to support the holding frame 112 in a position where the side of the sheet TE to which the chips CP are attached faces the particle beam source 61, i.e., faces vertically downward. The activation processing device 60 then performs a first activation step in which the particle beam source 61 irradiates a particle beam toward the bonding surfaces CPf of each of the chips CP attached to the sheet TE. The activation processing device 60 prepares only one holding frame 112 to hold the sheet TE to which multiple chips CP are attached, and irradiates the particle beam toward the chips CP attached to the sheet TE held by the prepared holding frame 112. The activation processing device 60 moves the particle beam source 61 in the X-axis direction while irradiating the bonding surfaces CPf of the chips CP with a particle beam, as indicated by arrows AR34 in FIGS. 9A and 9B. For example, the activation processing device 60 irradiates the bonding surfaces CPf of all chips CP attached to the tape TE with a particle beam while moving the particle beam source 61 in the +X direction, and then irradiates the bonding surfaces CPf of the chips CP with a particle beam while moving the particle beam source 61 in the -X direction. The moving speed of the particle beam source 61 is set to, for example, 1.2 to 14.0 mm / sec. Furthermore, the angle (incident angle) θ1 between the irradiation axis J1 of the particle beam and the normal direction N1 of the virtual plane S1 shown in FIG. 9A is set to be 30 degrees or more and 80 degrees or less. The power supplied to the particle beam source 61 is set to, for example, 1 kV and 100 mA. The flow rate of the nitrogen gas introduced into the discharge chamber 612 of the particle beam source 61 is set to, for example, 100 sccm. At this time, the impurities CPA1 generated from the chip CP or the sheet TE are blown away from the chip CP and do not return to the bonding surface CPf side of the chip CP.

[0040] Next, as shown by arrow AR36 in Fig. 10A, the activation processing device 60 inverts the holding frame 112 held by the frame holding unit 621, so that the bonding surface CPf of the chip CP attached to the sheet TE faces vertically upward. Then, as shown by arrow AR37 in Fig. 10B, the activation processing device 60 performs a second activation step in which nitrogen radicals are irradiated onto the bonding surface CPf of the chip CP by the radical source 67. Here, the power supplied to the plasma chamber 671 in the radical source 67, the flow rate of nitrogen gas introduced into the plasma chamber 671, and the irradiation time of the nitrogen radicals are set to the same conditions as, for example, those in the substrate mounting surface activation step described above.

[0041] 8, the chip bonding system 1 then executes a chip preparation step in which the chip supply unit 11 of the chip supply device 10 holds the holding frame 112 that holds the sheet TE to which the chips CP are attached, to prepare for bonding the chips CP to the substrate WT (step S5). At this time, the transfer robot 71 receives the holding frame 112 that holds the sheet TE from the activation processing device 60 in an orientation in which the bonding surfaces CPf of the chips CP face vertically upward. Thereafter, the transfer robot 71 transfers the received holding frame 112 as is to the chip supply unit 11 of the chip supply device 10.

[0042] Next, the chip bonding system 1 performs a chip bonding process in which the chip CP, whose bonding surface CPf has been activated by the activation treatment device 60, is brought into contact with the mounting surface WTf of the substrate WT to bond it to the substrate WT (step S6). Here, the chip bonding system 1 first orients one plate 391 of the chip transport device 39 toward the chip supply unit 11. Next, the pickup mechanism 111 moves vertically upward to perform a chip supply process (second object to be bonded supply process) in which one chip CP is cut out from the side of the sheet TE opposite the side where the multiple chips CP are located, and the single chip CP is released from the sheet TE. In this state, the chip transport device 39 protrudes the arm 394 from the plate 391. At this time, the needle 111a of the pickup mechanism 111 is positioned between the two legs 393a of the chip holder 393. In this way, the chip CP is ready to be transferred to the chip holder 393, as shown in FIGS. 11A and 11B. When the pickup mechanism 111 is moved vertically downward from this state, the chip CP is transferred to the chip holder 393 .

[0043] Next, the chip bonding system 1 rotates the plate 391 in the direction of arrow AR1 in FIG. 11A. At this time, as shown in FIG. 12A, the chip holding part 393 at the tip of the arm 394 of the chip conveying device 39 is positioned at a transfer position Pos1 vertically above the head 33H of the bonding unit 33. That is, the chip conveying device 39 conveys the chip CP received from the chip supply unit 11 to the transfer position Pos1 where the chip CP is transferred to the head 33H. Then, the head driving unit 36 ​​moves the bonding unit 33 vertically upward to bring the head 33H closer to the chip holding part 393 of the chip conveying device 39. Next, the support part driving unit 432b moves the chip support part 432a vertically upward. As a result, the chip CP held by the chip holding part 393 is positioned vertically above the chip holding part 393 while being supported by the upper end of the chip support part 432a, as shown in FIG. 12B. Next, the chip transport device 39 retracts the arm 394 into the plate 391. Thereafter, the support part driving part 432b moves the chip support part 432a vertically downward, so that the chip CP is held at the tip part of the head 33H.

[0044] Thereafter, the chip bonding system 1 performs alignment to correct the relative positional deviation between the chip CP and the substrate WT by driving the stage 315 and rotating the bonding unit 33. Then, the chip bonding system 1 raises the head 33H to bond the chip CP to the substrate WT. At this point, the mounting surface WTf of the substrate WT and the bonding surface CPf of the chip CP are hydrophilically bonded via hydroxyl groups (OH groups).

[0045] After the series of steps described above is completed, the substrate WT with the chips CP mounted thereon is removed from the chip bonding system 1 and then placed in a heat treatment device (not shown) for heat treatment. The heat treatment device performs heat treatment on the substrate WT under conditions of, for example, a temperature of 350°C and one hour.

[0046] Next, we will explain the results of evaluating the bonding strength between the chip CP and the substrate WT bonded by the chip bonding system according to this embodiment. Here, we will explain the evaluation results of the bonding strength between the chip CP and the substrate WT bonded by the chip bonding method according to this embodiment, and the evaluation results of the bonding strength between the chip CP and the substrate WT bonded by the chip bonding methods according to three types of comparative examples 1, 2, and 3. First, we will explain the chip bonding methods according to comparative examples 1, 2, and 3.

[0047] The chip bonding method according to Comparative Example 1 differs from the chip bonding method according to the embodiment in that an activation processing device 9060 as shown in FIG. 13 is used in the chip bonding surface activation step described with reference to FIG. 8. This activation processing device 9060 includes a chamber 9064, a stage 9621 supporting a holding frame 112, a high-frequency power supply 9061 that applies a high-frequency bias, and a gas supply unit 677 that supplies nitrogen gas into the chamber 9064 via a supply pipe 676. Note that in FIG. 13, components similar to those in the activation processing device 60 according to the embodiment are denoted by the same reference numerals as in FIG. 5. The high-frequency power supply 9061 applies a high-frequency bias to the chip CP attached to the sheet TE held by the holding frame 112 supported by the stage 9621. The high-frequency power supply 9061 generates a high-frequency bias of, for example, 13.56 MHz. In this way, by applying a high-frequency bias to the tip CP by the high-frequency power supply 9061, a sheath region PLM9 is generated near the bonding surface CPf of the tip CP and the sheet TE, where ions having kinetic energy repeatedly collide with the tip CP and the sheet TE. The bonding surface CPf of the tip CP is then activated by the ions having kinetic energy present in this sheath region PLM9. Here, impurities CPA9 generated from the tip CP or the sheet TE that are present in the sheath region PLM9 and ionized also collide with the bonding surface CPf of the tip CP.

[0048] The chip bonding method according to Comparative Example 2 differs from the chip bonding method according to the embodiment in that the chip bonding surface activation step described with reference to Fig. 8 uses an activation treatment device in which the radical source 67 described in the embodiment is provided in the activation treatment device 9060. That is, in the chip bonding method according to Comparative Example 2, a high-frequency bias is applied to the chip CP to perform activation treatment on the bonding surface CPf of the chip CP, and then nitrogen radicals are irradiated onto the bonding surface CPf of the chip CP.

[0049] The chip bonding method according to Comparative Example 3 differs from the chip bonding direction according to the embodiment in that, in the chip bonding surface activation step described with reference to Fig. 8, the activation treatment device 60 only irradiates the bonding surface CPf of the chip CP with a particle beam, and does not irradiate the bonding surface CPf of the chip CP with nitrogen radicals. Note that, in Comparative Examples 1 to 3 and the chip bonding methods according to the embodiment, the activation treatment device used to irradiate the bonding surface CPf of the chip CP with nitrogen radicals was the activation treatment device 60 shown in Fig. 5, but with a configuration including a plate electrode provided on a glass window 674 and a high-frequency power supply electrically connected to the plate electrode, instead of the magnetron 672 and waveguide 673.

[0050] Next, we will describe the results of evaluating the bonding strength between a chip CP and a substrate WT bonded to each other using the chip bonding methods according to Comparative Examples 1 to 3 and the chip bonding method according to the embodiment. Here, a glass (SiO2) substrate was used as the substrate WT. The chips CP used included a chip with only SiON exposed on the bonding surface CPf, a chip with SiON and Cu exposed on the bonding surface CPf, a chip with resin and Cu exposed on the bonding surface CPf, a chip with SiON and an alloy mainly composed of lead and tin (hereinafter referred to as "solder") exposed on the bonding surface CPf, and a chip with resin and solder exposed on the bonding surface CPf. Specifically, the chips CP used included a chip with only a region made of SiON on the bonding surface CPf, a chip with a region made of SiON and a region made of Cu formed on the bonding surface CPf, a chip with a region made of resin and a region made of Cu formed on the bonding surface CPf, a chip with a region made of SiON and a region made of solder formed on the bonding surface CPf, and a chip with a region made of resin and a region made of solder formed on the bonding surface CPf. The evaluation of bonding strength was carried out for 40 types of samples 1 to 40, which had different combinations of the type of gas used in the activation treatment of the bonding surface CPf of the chip CP, the chip bonding method used, and the type of chip CP.

[0051] In addition, in the chip bonding surface activation process according to Comparative Examples 1 and 2, the bias power of the high-frequency bias applied to the chip CP was set to 110 W in both cases. The duration of application of the high-frequency bias to the chip CP was set to 30 seconds. In addition, the degree of vacuum in the chamber 64 in the chip bonding surface activation process according to Comparative Examples 1 and 2 was set to 50 Pa for all samples. On the other hand, the degree of vacuum in the chamber 64 during particle beam irradiation in the chip bonding surface activation process according to Comparative Example 3 and the embodiment was set to 5.0 × 10 Pa for all samples. In addition, in the chip bonding surface activation process according to Comparative Example 2 and the embodiment, the power supplied from the high-frequency power source to the plasma chamber 671 during nitrogen radical irradiation was set to 250 W in both cases.

[0052] Furthermore, for all samples after the chip CP was bonded to the substrate WT using the chip bonding methods according to Comparative Examples 1 to 3 and the embodiment, the substrate WT was heat-treated at 350°C for 1 hour in a heat treatment device. Table 1 below summarizes the materials exposed on the bonding surface CPf of the chip CP and the processing conditions for the chip bonding surface activation step for each of the 40 types of Samples 1 to 40. The column "Material Exposed on Bonding Surface" in Table 1 indicates the material exposed on the bonding surface CPf of the chip CP for each sample. The column "Chip Bonding Surface Activation Step" indicates the activation processing method used in the chip bonding surface activation step for each sample. Specifically, "Comparative Example 1" indicates the case where the chip bonding surface activation step according to Comparative Example 1 was used, "Comparative Example 2" indicates the case where the chip bonding surface activation step according to Comparative Example 2 was used, and "Comparative Example 3" indicates the case where the chip bonding surface activation step according to Comparative Example 3 was used. The column "Embodiment" indicates the case where the chip bonding surface activation step according to the embodiment described above with reference to FIG. 8 was used. For samples 1 to 20, nitrogen gas was used as the gas introduced into chamber 9064 when a high frequency bias was applied to the chip CP in the chip bonding surface activation process or as the gas introduced into discharge chamber 612 of particle beam source 61 when particle beam irradiation was performed. On the other hand, for samples 21 to 40, argon (Ar) gas was used as the gas introduced into chamber 9064 when a high frequency bias was applied to the chip CP in the chip bonding surface activation process or as the gas introduced into discharge chamber 612 of particle beam source 61 when particle beam irradiation was performed.

[0053] [Table 1]

[0054] The bond strength between the chip CP and the substrate WT for Samples 1 to 40 was evaluated by measuring the bond strength (converted to surface energy) using a crack-and-open method in which a blade is inserted. In this crack-and-open method, a blade, such as a razor blade, is inserted from the periphery of the chip CP to the bonded portion of the chip CP and the substrate WT, and the peel length of the chip CP is measured. A blade with a thickness of 100 μm is used. The blade is inserted at four points on the periphery of the chip CP bonded to the substrate WT, and the peel length from the blade contact point is measured. The strength of the bonded interface between the chip CP and the substrate WT was then calculated in terms of surface energy per unit area from the peel length for each of the four points on the periphery of the chip CP, thereby evaluating the bond strength between the chip CP and the substrate WT. The bond strength (converted to surface energy) Eb was calculated from the peel length using the following relational expression (2):

[0055]

number

[0056] Tables 2 and 3 show the average bonding strength (converted to surface energy) at four locations on the periphery of the chip CP for each of Samples 1 to 40. The "Sample Name" column in Tables 2 and 3 corresponds to Samples 1 to 40 in Table 1. The greater the calculated bonding strength (converted to surface energy) for each sample, the greater the bonding strength between the chip CP and the substrate WT. Samples that experienced bulk fracture are labeled "bulk fracture." The "Bondability" column in Tables 2 and 3 indicates that the chip CP was successfully bonded to the substrate WT with a "○" and that the chip CP was not successfully bonded to the substrate WT with a "×." The bonding strength was calculated only for samples in which the chip CP was successfully bonded to the substrate WT.

[0057] [Table 2]

[0058] [Table 3]

[0059] The evaluation results for Samples 2 to 5, 7 to 10, 22 to 25, and 27 to 30 in Tables 2 and 3 reveal that when the chip bonding surface activation processes of Comparative Examples 1 and 2 are used, the chip CP cannot be bonded to the substrate WT if Cu, resin, or solder is exposed on the bonding surface CPf of the chip CP. This suggests that when the chip bonding surface activation processes of Comparative Examples 1 and 2 are used, impurities from Cu, resin, or solder collide with the bonding surface CPf, causing damage to the bonding surface CPf to such an extent that the chip CP cannot be bonded to the substrate WT. However, the evaluation results for Samples 1, 6, 21, and 26 reveal that even when the chip bonding surface activation processes of Comparative Examples 1 and 2 are used, the chip CP can be bonded to the substrate WT if only SiON is exposed on the bonding surface CPf of the chip CP.

[0060] On the other hand, the evaluation results for Samples 11 to 20 and 31 to 40 in Tables 2 and 3 reveal that when the chip bonding surface activation process according to Comparative Example 3 and the embodiment is employed, the chip CP can be bonded to the substrate WT even when Cu, resin, or solder is exposed on the bonding surface CPf of the chip CP. This is thought to be because, when the bonding surface CPf of the chip CP is activated by irradiating the bonding surface CPf with a particle beam, no high-frequency bias is applied to the chip CP, thereby suppressing damage to the bonding surface CPf due to impurities from Cu, resin, or solder impinging on the bonding surface CPf. Therefore, when Cu, resin, or solder is exposed on the bonding surface CPf of the chip CP, it can be said that employing the method of activating the bonding surface CPf of the chip CP by irradiating it with a particle beam in the chip bonding surface activation process is important for achieving good bonding of the chip CP to the substrate WT.

[0061] Furthermore, comparing the bonding strength of Samples 21 to 30 with that of Samples 31 to 40 reveals that the bonding strength of Samples 21 to 30 is higher than that of Samples 31 to 40. This indicates that nitrogen gas, rather than Ar gas, is preferable to introduce into the discharge chamber 612 of the particle beam source 61 when irradiating the bonding surface CPf of the chip CP with a particle beam, from the perspective of improving the bonding strength between the chip CP and the substrate WT. The reason why the bonding strength between the chip CP and the substrate WT is improved when nitrogen gas is used compared to when Ar gas is used is thought to be because Ar has a larger mass than nitrogen, so even if OH groups are generated on the bonding surface CPf of the chip CP, they are blown away by the collision of Ar. Furthermore, comparing the bonding strength of Samples 21 to 25 with that of Samples 26 to 30 reveals that the bonding strength of Samples 21 to 25 is higher than that of Samples 26 to 30. From this, it is clear that it is preferable to irradiate the bonding surface CPf of the chip CP with a particle beam and then irradiate the bonding surface CPf with nitrogen radicals in terms of improving the bonding strength between the chip CP and the substrate WT.

[0062] In addition, when the oxide SiON was replaced with the oxide SiO2 and the nitride SiN in the aforementioned documents 1 to 4, 6 to 9, 11 to 14, 16 to 19, 21 to 24, 25 to 29, 31 to 34, and 35 to 39, similar evaluations were performed, and the same results were obtained. Furthermore, when oxygen gas was used instead of nitrogen gas, metals such as Cu or solder present on the bonding surface CPf of the chip CP were oxidized by the oxygen, resulting in poor connection resistance between the chip CP and the substrate WT. Similarly, when plasma treatment was performed on the bonding surface CPf of the chip CP instead of irradiating it with a particle beam using the particle beam source 61 as described above, the best results were obtained when nitrogen gas was used. In other words, it is believed that using nitrogen gas most effectively generates OH groups on the bonding surface CPf of the chip CP without oxidizing metals such as Cu or solder present on the bonding surface CPf of the chip CP.

[0063] As described above, in the chip bonding system 1 according to this embodiment, in the activation processing device 60, the support unit 62 holds the sheet TE, to which the chip CP is attached, in a position where the side to which the chip CP is attached faces the particle beam source 61. The particle beam source 61 then irradiates a particle beam toward the bonding surface CPf of the chip CP attached to the sheet TE. That is, the bonding surface CPf of the chip CP attached to the sheet TE is activated by irradiating the particle beam toward the bonding surface CPf. This prevents impurities generated from the sheet TE or the chip CP by the particle beam irradiation from colliding with the bonding surface CPf of the chip CP, thereby preventing damage to the bonding surface CPf of the chip CP due to the collision of impurities. This prevents bonding defects between the chip CP and the substrate WT.

[0064] Furthermore, in the chip bonding system 1 according to the present embodiment, the chip CP to be bonded to the substrate WT may be a chip CP having a bonding surface CPf on which a plurality of types of regions made of different materials are formed. In this case, the particle beam irradiation suppresses impurities generated from each of the plurality of types of regions on the bonding surface CPf of the chip CP from colliding with the bonding surface CPf of the chip CP, thereby suppressing damage to the bonding surface CPf of the chip CP caused by the collision of the impurities.

[0065] Furthermore, in the chip bonding system 1 according to this embodiment, the particle beam source 61 is set so that the incident angle θ1 of the particle beam with respect to the imaginary plane S1 including at least one of the bonding surfaces CPf of the plurality of chips CP attached to the sheet TE is between 30 degrees and 80 degrees. This prevents the particle beam from being irradiated onto the sheet TE through the gaps between the adjacent chips CP, thereby suppressing the generation of impurities from the sheet TE.

[0066] Furthermore, the activation processing device 60 according to this embodiment has a cover 622 that covers the portion of the sheet TE on the side on which the chips CP are attached except for the portion on which the chips CP are attached, when the holding frame 112 that holds the sheet TE on which the chips CP are attached is held by the frame holding part 621. This suppresses the generation of impurities from the sheet TE due to irradiation of the particle beam onto the portion of the sheet TE other than the portion on which the chips CP are attached.

[0067] Furthermore, in the activation processing apparatus 60 according to this embodiment, when the bonding surface CPf of the chip CP is irradiated with a particle beam, the support unit 62 supports the holding frame 112 that holds the sheet TE to which the chip CP is attached, with the bonding surface CPf of the chip CP facing vertically downward. Then, the particle beam source 61 irradiates the bonding surface CPf of the chip CP with a particle beam from vertically below the support unit 62. As a result, impurities generated by irradiating the sheet TE and the chip CP with the particle beam fall vertically downward due to gravity, thereby suppressing adhesion of the impurities to the bonding surface CPf of the chip CP.

[0068] Furthermore, the particle beam irradiated onto the bonding surface CPf of the chip CP by the particle beam source 61 according to this embodiment contains nitrogen, which can increase the bonding strength between the chip CP and the substrate WT when the chip CP is bonded to the substrate WT, compared to a configuration in which a particle beam containing Ar is irradiated, for example, in the chip bonding surface activation step described above.

[0069] The activation processing apparatus 60 according to this embodiment further includes a radical source for irradiating the bonding surface CPf of the chip CP with nitrogen radicals, which can increase the bonding strength between the chip CP and the substrate WT when the chip CP is bonded to the substrate WT, compared to a configuration in which only a particle beam containing nitrogen is irradiated, for example, in the chip bonding surface activation step described above.

[0070] However, if the particle beam source 61 is, for example, an ion gun, the particle beam may spread too much and irradiate portions of the chamber 64 other than the holding frame 112 holding the sheet TE to which the chips CP are attached. This may result in metal contamination on the inner wall of the chamber 64. In particular, when performing a hydrophilic treatment in the activation treatment device 60 as in this embodiment, the presence of metal is undesirable. In contrast, in this embodiment, a high-speed particle beam source with high directivity is used as the particle beam source 61. This prevents the particle beam from irradiating portions of the chamber 64 other than the holding frame 112 holding the sheet TE to which the chips CP are attached. Furthermore, the particle beam source 61, which is a high-speed particle beam source, is effectively moved in a scanning manner near the holding frame 112 holding the sheet TE to which the chips CP are attached, thereby shielding the outer peripheries of the multiple chips CP attached in a circular area in a plan view on the sheet TE1, thereby irradiating only the chips CP.

[0071] Incidentally, when the particle beam source 61 is a fast atom beam source and the discharge chamber 612 is made of a carbon material, carbon powder is generated from the peripheral wall of the discharge chamber 612. Furthermore, in a configuration in which the particle beam source 61 is disposed vertically above the chip CP and a particle beam is irradiated from vertically above the chip CP during the chip bonding surface activation process, the carbon powder generated from the peripheral wall of the discharge chamber 612 may fall onto and adhere to the bonding surface CPf of the chip CP. In contrast, according to this embodiment, the particle beam source 61 is disposed vertically below the multiple chips CP. This allows the carbon powder generated by the particle beam source 61 to accumulate within the discharge chamber 612 and prevent it from scattering outside the discharge chamber 612, thereby preventing it from adhering to the bonding surface CPf of the chip CP. This prevents poor bonding of the chip CP to the substrate WT.

[0072] Although the embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments. For example, the particle beam source 61 of the activation processing device 60 may be an ion beam source that accelerates and emits nitrogen ions.

[0073] In the embodiment, an example of the chip bonding system 1 for bonding a chip CP to a substrate WT has been described, but the present invention is not limited to this, and may be applied to a substrate bonding system for bonding substrates together. In this case, the activation processing device 60 may perform a process similar to the activation process described in the embodiment on the bonding surfaces of each of the substrates to be bonded. For example, when a metal electrode and an insulating film are provided on the bonding surfaces of each of the two substrates, it is preferable to perform the activation process by irradiating the bonding surfaces of the substrates with a particle beam.

[0074] In the embodiment, an example of the activation processing device 60 has been described in which the particle beam source 61 is moved relative to the holding frame 112 that holds the sheet TE to which the chips CP are attached. However, the present invention is not limited to this, and for example, the particle beam source 61 may be fixed and the holding frame 112 that holds the sheet TE to which the chips CP are attached may be moved. Alternatively, the particle beam source 61 and the holding frame 112 that holds the sheet TE to which the chips CP are attached may be moved in opposite directions.

[0075] The activation treatment device 60 according to the embodiment may be provided with a water supply unit that supplies water gas into the chamber 64. Here, the water supply unit may be one that introduces water vapor into the chamber 64, or one that introduces liquid (atomized) water into the chamber 64. Furthermore, water vapor may be generated, for example, by passing nitrogen as a carrier gas through liquid water.

[0076] In the embodiment, an example has been described in which irradiation of a particle beam onto a chip CP and radical processing of the chip CP are performed in one activation processing device 60, but this is not limited to this, and for example, the irradiation of a particle beam onto the chip CP and the radical processing of the chip CP may be performed in separate devices.

[0077] In the embodiment, an example of the chip bonding system 1 has been described in which, in the activation processing device 60, chips CP attached to a sheet TE held by a holding frame 112 are subjected to a chip bonding surface activation process, i.e., a first activation process and a second activation process, and then the holding frame 112 is directly introduced into the chip supply unit 11 of the chip supply device 10. However, the present invention is not limited to this. For example, the chip bonding system may include a cleaning device (not shown) that cleans the chips CP while they are attached to the sheet TE held by the holding frame 112, and cleans the chips CP after the chip bonding surface activation process has been performed on the chips CP. Here, the cleaning device may include, for example, a support unit (not shown) that supports the holding frame 112 that holds the sheet TE to which the chips CP are attached, and a cleaning head (not shown) that discharges water that has been subjected to ultrasonic or megasonic vibrations or a cleaning liquid that reduces the electrode surface onto the chips CP attached to the sheet TE held by the holding frame 112. Note that the liquid discharged from the cleaning head is not limited to water or the aforementioned cleaning liquid, and may be other types of liquid such as organic solvents. The cleaning device first rotates the support part that supports the chip CP while spraying ultrasonically applied water or cleaning liquid onto the chip CP attached to the sheet TE using the cleaning head, cleaning the entire bonding surface CPf of the chip CP. The cleaning device then dries the chip CP and the sheet TE by rotating the support part while stopping the spraying of water or cleaning liquid from the cleaning head. The cleaning device may also remove particles adhering to the chip CP by spraying an inert gas such as N2 onto the chip CP instead of water.

[0078] As described in the embodiment, when the particle beam source 61 is a fast atom beam source and the discharge chamber 612 is made of a carbon material, carbon powder is generated from the peripheral wall of the discharge chamber 612. Then, during the chip bonding surface activation process, there is a risk that the carbon powder generated from the peripheral wall of the discharge chamber 612 will adhere to the bonding surface CPf of the chip CP. In contrast, according to the present configuration, after the chip bonding surface activation process is performed in the activation processing device 60, the bonding surface CPf of the chip CP is cleaned in the cleaning device, thereby suppressing the occurrence of bonding defects between the chip CP and the substrate WT.

[0079] Another possible method for cleaning the bonding surfaces CPf of the chips CP is to clean the chips CP one by one before bonding the chips CP to the substrate WT using the bonding device 30. However, this method requires cleaning each chip CP separately, which increases the time required to mount multiple chips CP on the substrate WT. In contrast, this configuration allows multiple chips CP attached to the sheet TE to be cleaned at once. Therefore, the time required to mount multiple chips CP on the substrate WT can be reduced.

[0080] In the embodiment, an example has been described in which, in the chip bonding surface activation process, a particle beam is irradiated onto a plurality of chips CP and radical processing is performed on the chips CP while the plurality of chips CP are attached to a sheet TE at a distance from one another. However, this is not limiting. For example, after dicing a substrate on which the plurality of chips CP are formed, the bonding surfaces CPf of the chips CP may be cleaned in the cleaning device while the plurality of chips CP are in contact or connected with one another. Here, the chip supply device may have an expanding unit that stretches the sheet TE held by the holding frame 112 to separate the plurality of chips CP attached to the sheet TE. In this case, after the cleaning device cleans the plurality of chips CP attached to the sheet TE held by the holding frame 112, the holding frame 112 is inserted into the chip supply device, and the chip supply device stretches the sheet TE held by the holding frame 112 to separate the plurality of chips CP from one another. The chip supplying device may include a drying unit (not shown) that dries the chips CP and the sheet TE after stretching the sheet TE.

[0081] According to this configuration, for example, when a plurality of chips CP are washed with water or a washing liquid, water is prevented from pooling between the plurality of chips CP.

[0082] 14A, the cleaning device may include an inner support portion 2119a and a frame support portion 2119b. The inner support portion 2119a supports the inside of the holding frame 112 with respect to the sheet TE held by the holding frame 112. The frame support portion 2119b supports the holding frame 112 and is movable in the -Z direction relative to the inner support portion 2119a, as indicated by arrow AR10 in FIG. 14A. The cleaning device also includes a frame drive portion (not shown) that drives the frame support portion 2119b in the Z-axis direction, and a rotation drive portion (not shown) that rotates the inner support portion 2119a that supports the sheet TE and the frame support portion 2119b that supports the holding frame 112 in the thickness direction of the holding frame 112, i.e., around a rotation axis J10 that extends along the Z-axis direction. After the multiple chips CP are washed with water, the frame drive unit moves the frame support portion 2119b relative to the inner support portion 2119a, so that the first portion PA1 on the sheet TE to which the multiple chips CP are attached is spaced apart in the direction of the rotation axis J10 from the second portion PA2 fixed to the holding frame 112.

[0083] The cleaning device also includes a suction unit (not shown) that suctions the first portion PA1 of the sheet TE, to which multiple chips CP are attached, from the side opposite the chip CP. As shown in FIG. 14B , the frame drive unit positions the first portion PA1 of the sheet TE at a greater distance from the second portion PA2 in the direction of the rotation axis J10 of the sheet TE, i.e., the -Z direction. At this time, the suction unit suctions the multiple chips CP that are in contact with or connected to each other and are generated by dicing the diced substrate that forms the base of the multiple chips CP attached to the sheet TE. The frame drive unit then moves the frame support unit 2119b in the -Z direction relative to the inner support unit 2119a. This prevents the multiple chips CP attached to the sheet TE in a contacting or connected state from separating from each other, thereby preventing water from adhering between the multiple chips CP.

[0084] 14C, the cleaning device rotates the inner support part 2119a and the frame support part 2119b while discharging water or cleaning liquid from the cleaning head, thereby cleaning the chips CP. After that, the rotation drive part rotates the inner support part 2119a and the frame support part 2119b while the discharge of water or cleaning liquid from the cleaning head is stopped, thereby drying the sheet TE and the chips CP. At this time, the water or cleaning liquid adhering to the chips CP is removed by centrifugal force, as shown by arrow AR11 in FIG. 14C.

[0085] According to this configuration, the first portion PA1 on the sheet TE to which multiple chips CP are attached is positioned a distance H1 away from the second portion PA2 fixed to the holding frame 112 in the direction of the rotation axis J10, thereby preventing water or cleaning liquid adhering to the chips CP from accumulating without coming into contact with the inside of the holding frame 112 and the sheet TE when the inner support portion 2119a and the frame support portion 2119b are rotated.

[0086] The chip bonding system may also include a cleaning device (not shown) that cleans the chips CP individually one by one. In this case, the cleaning device may clean a chip CP when it is supplied from the chip supply device and is being transported to the bonding device.

[0087] Furthermore, as a method for dicing the diced substrate that will become the base for the multiple chips CP, it is preferable to adopt a stealth dicing method using laser light in order to suppress the generation of burrs on the edges of the chips CP, which makes it possible to treat the multiple chips CP that are attached to the sheet TE in a state of contact or being connected to each other in the same way as a single diced substrate before dicing.

[0088] Furthermore, a dicing device may be used to process the substrate WC so as to form grooves WCT in the areas corresponding to the stealth diced portions PAS, as shown in FIG. 15A. In this case, burrs may occur in the corners WCC, which are enclosed by dashed lines in FIG. 15A. Therefore, after the grooves WCT are formed, the burrs in the corners WCC are removed by polishing. Then, as shown in FIG. 15B, the substrate WC is divided into multiple chips CP, each having a step portion CPd. Because the chips CP have the step portion CPd, the chips CP can be transported by holding the surface Cpd1 or the first corner portion CPC1 on the −Z direction side of the step portion CPd. Therefore, the chips CP can be transported without touching the bonding surface CPf and the second corner portion CPC2 of the chips CP.

[0089] Furthermore, the chip bonding system according to the above-described modified example may further include a separation device (not shown) that performs a separation step of separating the plurality of chips CP from one another by stretching the sheet TE held by the holding frame 112 that holds the sheet TE to which the plurality of chips CP are attached. Furthermore, in this separation device, the sheet TE in the stretched state may be held again by a ring-shaped sheet holding frame (not shown), and the sheet holding frame holding the sheet TE may be supplied to a bonding device.

[0090] However, when mounting multiple types of chips CP on one substrate WT, for example, to change the chip CP to be fed into the chip supply device, it is necessary to loosen the stretched sheet TE and remove it from the chip supply device. Therefore, when loosening the stretched sheet TE, adjacent chips CP attached to the sheet TE may collide with each other and be damaged, resulting in the generation of burrs or particles.

[0091] In contrast, with this configuration, the multiple chips CP attached to the sheet TE can be maintained in a spaced-apart state. This makes it possible to store multiple types of chips CP while each is attached to the sheet TE. Therefore, for example, when mounting multiple types of chips CP on one substrate WT, the chips CP can be mounted on the substrate WT while appropriately replacing the sheet holding frame that holds the sheet TE, and the generation of burrs or particles on the chips CP is suppressed.

[0092] In an embodiment, the chip CP may have a stepped portion CPd on the periphery of the bonding surface CPf, as shown in FIG. 16A. In this case, the chip transport device 39 may have a chip holding unit 3393 with a suction portion 3393a, as shown in FIG. 16A, at the tip of the arm 394. The chip holding unit 3393 is a collet chuck that holds the chip CP by suctioning the chip CP with the suction portion 3393a while a portion of the chip CP is in contact with the corner portion CPP1, i.e., the portion of the chip CP at the stepped portion CPd opposite the bonding surface CPf. Note that the phrase "the portion of the chip CP at the stepped portion CPd opposite the bonding surface CPf" includes not only the corner portion CPP1 but also the stepped portion CPd or the outermost side surface of the chip CP. In other words, the chip holding unit 3393 holds the portion of the chip CP at the stepped portion CPd opposite the bonding surface CPf, i.e., the corner portion CPP1. The chip transport device 39 then performs a chip transport step (second object transport step) in which the chip holding portion 3393 holds a portion CPP1 of the step portion CPd of the chip CP opposite to the bonding surface CPf side and transports the chip CP from the chip supply device 10 to the bonding device 30. As shown in FIG. 16B, the chip holding portion 4393 may be a collet chuck having an inclined surface 4393b. In FIG. 16B, the same components as those shown in FIG. 16A are denoted by the same reference numerals. In this case, when the chip CP is held by the chip holding portion 4393, the first corner portion CPC1 of the chip CP is held in contact with the inclined surface 4393b, thereby correcting the position of the chip CP. This is preferable because, when the chip CP is held by the chip holding portion 4393, the chip holding portion 4393 is less likely to come into contact with the bonding surface CPf or the second corner portion CPC2 of the chip CP due to misalignment of the chip CP. The chip holding unit may be configured to clamp the second corner portion CPC2 or the outermost side surface of the chip CP for transport. Furthermore, the chip holding unit may have a so-called stepped tool that can suck and hold the chip CP in a state where it comes into contact with the step portion CPd of the chip CP but does not come into contact with the second corner portion CPC2 or the bonding surface CPf of the chip CP.

[0093] In the chip bonding system described in the embodiment, before the bonding process of bonding the chip CP to the substrate WT, the chip CP is transported one by one to the head 33 and bonded there. In this case, if a chip holder (not shown) that holds the chip CP from its bonding surface CPf is provided at the tip of the arm 394, particles or burrs may be generated if the chip holder comes into contact with the bonding surface CPf or a corner of the chip CP, which may result in voids at the interface between the chip CP and the substrate WT when the chip CP is bonded to the substrate WT. Furthermore, if the chip holder comes into contact with the bonding surface CPf of a chip CP that has been activated, the condition of the bonding surface CPf may deteriorate, resulting in poor bonding between the chip CP and the substrate WT. For example, in a method of bonding the chip CP to the substrate WT by melting solder provided on the chip CP, particles adhering to the bonding surface CPf of the chip CP are absorbed into the solder, and therefore do not significantly affect the bonding condition between the chip CP and the substrate WT. However, in a method of bonding the chip CP to the substrate WT after performing an activation process on the bonding surface CPf of the chip CP, the bonding surface CPf and the mounting surface WTf are bonded in a solid state, so particles adhering to the bonding surface CPf of the chip CP or burrs occurring at the corners of the chip CP can significantly affect the bonding condition between the chip CP and the substrate WT. In contrast, with the present configuration, the stepped portion CPd is provided on the periphery of the bonding surface CPf side of the chip CP, making it possible to transport the chip CP without touching the bonding surface CPf of the chip CP. This suppresses the generation of particles or burrs at the bonding surface CPf and corners of the chip CP and maintains the bonding surface CPf in a good condition, thereby suppressing the occurrence of poor bonding between the chip CP and the substrate WT.

[0094] Furthermore, this configuration is not limited to the case where the activation treatment method for the bonding surface CPf of the chip CP is the above-mentioned method of irradiating a particle beam, but is also effective when the activation treatment method is, for example, a method of activating the bonding surface CPf by performing plasma treatment on the bonding surface CPf of the chip CP. In a bonding method for bonding the chip CP to the substrate WT by performing activation treatment on the bonding surface CPf of the chip CP, if the chip holder comes into contact with the bonding surface CPf that has been activated, poor bonding between the chip CP and the substrate WT will occur. Therefore, as described above, it is particularly important to transport the chip CP without touching the bonding surface CPf of the chip CP in order to bond the chip CP to the substrate WT well.

[0095] In the embodiment, an example has been described in which, after the activation process is performed on the bonding surface CPf of the chip CP, a cleaning process is performed to clean the bonding surface CPf of the chip CP while the chip CP is being transported to the bonding apparatus 30. However, this is not limiting, and after the activation process is performed on the bonding surface CPf of the chip CP, the bonding surface CPf of the chip CP may be cleaned before the chip CP is transported to the bonding apparatus 30. In this case, it is preferable because particles adhering to the bonding surface CPf of the chip CP can be removed before the chip CP is transported to the bonding apparatus 30.

[0096] In the embodiment, an example has been described in which the chips CP are transported one by one to the head 33H of the bonding apparatus 30 and bonded to the substrate WT. However, this is not limiting. For example, after the aforementioned separation process, the chips CP attached to the sheet TE may be transported to the bonding apparatus 30 and directly bonded to the substrate WT. For example, as shown in FIG. 17A , the bonding apparatus may include a stage 315, which is a substrate support unit that holds the substrate WT, a frame support unit 3331 that supports a holding frame 112 that holds the sheet TE to which multiple chips CP are attached, a head 3033H that presses the chips CP toward the stage 315 from the side of the sheet TE opposite the chip CP side, a head driver 3036 that drives the head 3033H, and an elevator mechanism (not shown) that raises and lowers the frame support unit 3331 and the head driver 3036. Note that in FIG. 17A , components similar to those in the embodiment are denoted by the same reference numerals as in FIG. 2.

[0097] The bonding apparatus also includes a support driving unit (not shown) that drives the stage 315 and the frame support unit 3331, an imaging unit (not shown) that captures images of the first alignment mark and the second alignment mark from at least one of the side of the chip CP opposite the substrate WT side and the side of the substrate WT opposite the chip CP side, and a control unit (not shown) that controls the support driving unit and the imaging unit. Assume that the substrate WT is provided with a first alignment mark (not shown), and the chip CP is provided with a second alignment mark (not shown). In this case, the control unit controls the imaging unit to capture images of the first alignment mark and the second alignment mark, and calculates the amount of misalignment of the chip CP with respect to the substrate WT based on the captured image. The control unit then controls the support driving unit to move the frame support unit 331 or the stage 315 relatively in a direction that reduces the amount of misalignment of the chip CP with respect to the substrate WT. That is, this chip bonding system performs the following steps: an imaging step of capturing images of the first alignment mark and the second alignment mark using an imaging unit from at least one of the side of the substrate WT opposite the chip CP side and the side of the chip CP opposite the substrate WT side; a misalignment amount calculation step of calculating the misalignment amount of the chip CP relative to the substrate WT based on the captured image; and a moving step of moving the frame support unit 3331 or the stage 315 in a direction to reduce the misalignment amount of the chip CP relative to the substrate WT. Here, the imaging unit may be a so-called dual-view camera configured to capture images of the alignment marks on the chip CP and the substrate WT while inserted between the chip CP and the substrate WT. Alternatively, the imaging unit may be a so-called infrared camera that captures images of the alignment marks using infrared light from the side of the substrate WT opposite the mounting surface WTf or the side of the bonding surface CPf of the chip CP. Incidentally, when the imaging unit is a dual-view camera, particles may get mixed between the chip CP and the substrate WT.In contrast, if the imaging unit is configured to image the alignment mark using the aforementioned infrared light, there is no need to place the imaging unit between the chip CP and the substrate WT, which is preferable because it prevents particles from getting between the chip CP and the substrate WT and prevents particles from adhering to the chip CP or the substrate WT.

[0098] The bonding apparatus may capture images of the alignment marks while moving one imaging unit, or may use two imaging units to capture two sets of alignment marks, each consisting of an alignment mark on the substrate WT and an alignment mark on the chip CP, and calculate the positional deviation of the chip CP and the deviation in its orientation in the rotational direction. Furthermore, when the bonding apparatus pushes up the chip CP with the head 3033H, it is preferable to adsorb the chip CP from the side opposite the chip CP on the sheet TE so that the chip CP does not follow the pushing-up of the chip CP and the adjacent chip CP. Furthermore, if the sheet TE is stretched to separate the chips CP and then retracted, the adjacent chips CP may come into contact with each other, resulting in particles being generated from the chips CP or burrs at the corners of the chips CP. Therefore, after the separation process, it is preferable to bond the chips CP to the substrate WT while the sheet TE is stretched. Furthermore, when bonding the chips CP to the substrate WT, it is preferable to press the center of the chip CP toward the substrate WT so that the center of the chip CP comes into contact with the substrate WT. This allows the chip CP to be bonded to the substrate WT from the center, thereby preventing voids from being generated between the chip CP and the substrate WT due to air being trapped therebetween.

[0099] Here, the frame support part 3331 , the head 3033 H and the head drive part 3036 are disposed vertically below the stage 315 .

[0100] In this bonding apparatus, first, as shown in FIG. 17A, the holding frame 112 is positioned so that the surface of the sheet TE on the chip CP side faces vertically upward. Next, the lifting mechanism raises the frame support unit 3331 and the head driver 3036, as indicated by arrows AR302 and AR303 in FIG. 17B, to bring them closer to the stage 315 so that the distance between the sheet TE and the mounting surface WTf of the substrate WT becomes a preset reference distance. In this state, as shown in FIG. 17C, the head driver 3036 drives the head 3033H toward the stage 315 to bond the chip CP to the substrate WT. That is, the bonding apparatus bonds the chip CP to the substrate WT by moving the head 3033H toward the substrate WT while abutting the head 3033H on the side of the sheet TE opposite the side on which the chips CP are attached, on which the chips CP are attached.

[0101] The sheet TE may be coated with an adhesive whose adhesive strength decreases when irradiated with ultraviolet light on the side of the sheet TE to which the chips CP are attached. In this case, the bonding device may have an ultraviolet light irradiation unit that can locally irradiate ultraviolet light only on the portion of the sheet TE corresponding to the chips CP in contact with the substrate WT. In this case, the bonding device may have a head 3033H made of a transparent material, and the head 3033H may be abutted against the side of the sheet TE opposite the chip CP side, and moved toward the substrate WT to bring the chips CP into contact with the substrate WT. Then, the head 3033H irradiates ultraviolet light onto the sheet TE via the ultraviolet light irradiation unit. Note that the sheet TE is not limited to being coated with an adhesive whose adhesive strength decreases when irradiated with ultraviolet light. For example, the sheet TE may be coated with an adhesive whose adhesive strength decreases when heated or by other methods.

[0102] According to this configuration, the process of picking up the chips CP from the sheet TE and transferring them to the head 33H, as in the chip mounting system 1 according to the embodiment, is not required, so the number of processes required to mount the chips CP on the substrate WT can be reduced. Also, according to this configuration, the process of transporting the chips CP one by one can be omitted, so deterioration of the bonding surface CPf or generation of particles due to contact of the chip holding part with the bonding surface CPf of the chip CP when transporting the chips CP one by one, or generation of burrs due to contact of the chip holding part with the corners of the chip CP, can be suppressed, and poor bonding between the chip CP and the substrate WT can be suppressed.

[0103] Note that, after the activation treatment is performed on the bonding surface CPf of the chip CP, a bonding step of bonding the chip CP to the substrate WT may be performed directly. Alternatively, after the activation treatment is performed on the bonding surface CPf of the chip CP and before the bonding step of bonding the chip CP to the substrate WT, a cleaning step of cleaning the bonding surface CPf of the chip CP may be performed. This is preferable because particles adhering to the bonding surface CPf of the chip CP can be removed before bonding the chip CP to the substrate WT.

[0104] Incidentally, when the sheet TE is stretched and separated into multiple chips CP, particles generated from the chips CP often remain on the sheet TE. For this reason, if, for example, an attempt is made to bond the chips CP from vertically above the substrate WT, the particles on the sheet TE may rain down on the substrate WT, potentially causing poor bonding between the chips CP and the substrate WT. In contrast, with this configuration, the chips CP are bonded by approaching the substrate WT from vertically below, thereby suppressing poor bonding between the chips CP and the substrate WT caused by particles on the sheet TE.

[0105] Furthermore, this configuration is suitable for so-called hybrid bonding, in which, for example, a flat bonding surface CPf formed by CMP polishing a Cu electrode and an insulating film is activated by plasma treatment or particle beam irradiation, and then water molecules are attached to the bonding surface CPf to make it hydrophilic, before bonding the chip CP to the substrate WT.

[0106] In the embodiment, an example of a chip bonding system including the cleaning device 85 has been described, but the present invention is not limited to this, and the cleaning device 85 may not be included.

[0107] The present invention allows various embodiments and modifications without departing from the broad spirit and scope of the present invention. Furthermore, the above-described embodiments are intended to explain the present invention and do not limit the scope of the present invention. In other words, the scope of the present invention is defined by the claims, not the embodiments. Various modifications made within the scope of the claims and within the scope of the meaning of the invention equivalent thereto are considered to be within the scope of the present invention.

[0108] This application is based on Japanese Patent Application No. 2018-162738 filed on August 31, 2018, and Japanese Patent Application No. 2018-205227 filed on October 31, 2018. The entire specifications, claims, and drawings of Japanese Patent Application No. 2018-162738 and Japanese Patent Application No. 2018-205227 are incorporated herein by reference. [Industrial Applicability]

[0109] The present invention is suitable for manufacturing, for example, CMOS image sensors, memories, computing elements, and MEMS. [Explanation of symbols]

[0110] 1: chip bonding system, 10: chip supply device, 11: chip supply unit, 30: bonding device, 31: stage unit, 33: bonding unit, 33H, 3033H: head, 36, 3036: head drive unit, 39: chip transport device, 60: activation processing device, 61: particle beam source, 62: support unit, 63: beam source transport unit, 64: chamber, 64a: hole, 70: transport device, 71: transport robot, 80: loading / unloading unit, 85: cleaning device, 90: control unit, 111: pickup mechanism, 111a: needle, 112: holding frame, 113: holding frame drive unit, 114, 622: cover, 114a: through hole, 119, 621: frame holder, 315: stage, 320, 853: stage drive unit, 391: plate, 392: plate drive unit, 393: chip holder part, 394: arm, 395: arm drive part, 411: tip tool, 411a, 411b: through hole, 413: head main body part, 432a: tip support part, 432b: support part drive part, 611: electrode, 612: discharge chamber, 612a: FAB radiation port, 613: beam source drive part, 614, 677: gas supply part, 623: frame holder drive part, 631: support rod, 632: support body, 633: support Body drive unit, 634: bellows, 672: magnetron, 673: waveguide, 674: glass window, 675: plasma chamber, 676: supply pipe, 851: cleaning head, 852: stage, 2119a: inner support, 2119b: frame support, CP: chip, CPA1, CPA9: impurities, CPf: bonding surface, TE: sheet, OB1: trajectory, PLM9: sheath region, WT: substrate, WTf: mounting surface

Claims

1. A joining system for joining a second object to a first object, an activation treatment device including a particle beam source that activates the bonding surface of the second object by irradiating a particle beam onto the bonding surface of the second object, and a radical source that activates the bonding surface of the second object by irradiating nitrogen radicals onto the bonding surface of the second object, and that performs activation treatment on the bonding surface of the second object by the nitrogen radicals irradiated from the radical source after performing activation treatment on the bonding surface of the second object by the particle beam irradiated from the particle beam source; a bonding device that bonds the second object to the first object by bringing the second object, the bonding surface of which has been activated by the activation treatment device, into contact with the first object, the activation treatment device places the second object to be bonded in a position where a bonding surface of the second object faces vertically downward, irradiates the particle beam from the particle beam source arranged vertically below the second object to the bonding surface of the second object, thereafter inverts the second object to a position where the bonding surface of the second object faces vertically upward, and then irradiates the nitrogen radicals from the radical source arranged vertically above the second object to the bonding surface of the second object. Joining system.

2. the second object to be bonded has an electrode and an insulating film provided on the bonding surface, the insulating film is formed of an oxide, an oxynitride, or a nitride; The joint system of claim 1 .

3. The activation processing device comprises: a chamber maintained at a reduced pressure therein; In the chamber, the particle beam is irradiated from the particle beam source onto the bonding surface of the second object to be bonded, and thereafter, the nitrogen radicals are irradiated from the radical source onto the bonding surface of the second object to be bonded without placing the second object to be bonded outside the chamber. The joint system according to claim 1 or 2.

4. A joining system for joining a second object to a first object, an activation treatment device including a particle beam source that activates the bonding surface of the second object by irradiating a particle beam onto the bonding surface of the second object, and a radical source that activates the bonding surface of the second object by irradiating nitrogen radicals onto the bonding surface of the second object, and that performs activation treatment on the bonding surface of the second object by the nitrogen radicals irradiated from the radical source after performing activation treatment on the bonding surface of the second object by the particle beam irradiated from the particle beam source; a bonding device that bonds the second object to the first object by bringing the second object, the bonding surface of which has been activated by the activation treatment device, into contact with the first object, the activation treatment device further includes an object support unit that supports an object including at least the second object to be bonded, the particle beam source irradiates a particle beam onto a portion of the object formed of a plurality of types of materials, including the bonding surface of the second object to be bonded, thereby activating the bonding surface of the second object to be bonded; the radical source irradiates nitrogen radicals onto a portion of the target object that is made of a plurality of types of materials and that includes a bonding surface of the second object to be bonded, thereby activating the bonding surface of the second object to be bonded; the object support unit has a holding frame formed from a resin and holding a sheet to which at least one second object to be bonded is attached, and a support unit that supports the holding frame in an orientation in which one surface of the sheet to which at least one second object to be bonded is attached faces the particle beam source side, and supports the object in an orientation in which a portion of the object that is made of a plurality of types of materials and that includes the bonding surface of the second object to be bonded is exposed to the particle beam source side or the radical source side; the first object to be bonded is a substrate, the second object to be bonded is a chip, the particle beam source irradiates a particle beam toward the joining surface of each of the at least one second object to be joined that is attached to the sheet; the activation treatment device further has a cover that covers a portion of the sheet on the one surface to which at least one second object to be bonded is attached, excluding a portion to which at least one second object to be bonded is attached, when the holding frame is supported by the support portion. Joining system.

5. A bonding system for bonding a second object to a first object, the second object having a bonding surface on which a metal region and an insulator region are formed within the same surface, an activation treatment device including an object support unit for supporting an object including at least the second object to be bonded, and a particle beam source for irradiating the object with a nitrogen particle beam to activate a bonding surface of the second object to be bonded, the activation treatment being performed on the bonding surface of the second object to be bonded by the nitrogen particle beam irradiated from the particle beam source; a bonding device that hydrophilically bonds the second object to the first object by bringing the metal region and the insulator region on the bonding surface of the second object, the bonding surface of which has been activated by the activation treatment device, into surface contact with the bonding surface of the first object, the object support unit has a holding frame formed from a resin and holding a sheet to which at least one second object to be bonded is attached, and a support unit that supports the holding frame in a position where one surface of the sheet to which at least one second object to be bonded is attached faces the particle beam source, and supports the object in a position where a portion of the object made of a plurality of types of materials including the bonding surface of the second object to be bonded is exposed to the particle beam source, the first object to be bonded is a substrate, the second object to be bonded is a chip, the particle beam source irradiates a particle beam toward the joining surface of each of the at least one second object to be joined that is attached to the sheet; the activation treatment device further has a cover that covers a portion of the sheet on the one surface to which at least one second object to be bonded is attached, excluding a portion to which at least one second object to be bonded is attached, when the holding frame is supported by the support portion. Joining system.

6. The activation treatment device activates bonding surfaces of the plurality of second objects to be bonded that are in contact with or connected to each other immediately after the dicing substrate that is the basis of the plurality of second objects to be bonded is diced. The joint system according to any one of claims 1 to 5.

7. The bonding machine further includes a cleaning device that cleans at least one second object. The joint system according to any one of claims 1 to 6.

8. the cleaning device cleans at least one second object to be bonded while a sheet to which at least one second object to be bonded is attached is held by a holding frame. The joint system of claim 7 .

9. There are a plurality of second objects to be bonded, the plurality of second objects to be bonded are generated by dicing a dicing substrate that serves as a base for the plurality of second objects to be bonded, the cleaning device cleans the second objects in a state of contact with or connected to each other immediately after the dicing substrate is diced, The apparatus further includes a separation device that separates the second objects from one another by stretching the sheet held by the holding frame that holds the sheet to which the second objects are attached. The joint system of claim 8 .

10. the activation treatment device moves at least one of the particle beam source and an object including at least the second object to be bonded relatively to the other. The joint system of any one of claims 1 to 9.

11. the particle beam source is a fast atom beam source; The joint system according to any one of claims 1 to 10.

12. At least one of the second objects to be bonded is a chip having a stepped portion on a periphery on the bonding surface side, a second object supply device that supplies at least one second object to be bonded; a second object to be bonded transport device that transports at least one second object to be bonded supplied from the second object to be bonded supply device to the bonding device, the second object transporting device has a second object holding part that holds a part of the step part of at least one of the second objects on the opposite side to the joining surface side, The joint system of any one of claims 1 to 11.

13. There are a plurality of second objects to be bonded, The joining device is a substrate support part that holds the first object to be bonded; a frame support portion that supports a holding frame that holds a sheet to which a plurality of the second objects to be bonded are attached; a head that comes into contact with the sheet on a side opposite to the second objects; a head driving unit that drives the head in a direction approaching the substrate support unit to bond at least one second object to the first object, The joint system of any one of claims 1 to 12.

14. A joining method for joining a second object to a first object to be joined, a first activation step of activating a bonding surface of the second object to be bonded by irradiating at least the bonding surface of the second object to be bonded with a particle beam; a second activation step of irradiating the bonding surface of the second object with nitrogen radicals after the first activation step; a bonding step of bonding the second object to be bonded to the first object to be bonded by bringing the second object to be bonded, the bonding surface of which has been activated, into contact with the first object to be bonded, In the first activation step, the second object to be bonded is placed in a position where a bonding surface of the second object to be bonded faces vertically downward, and the particle beam is irradiated onto the bonding surface of the second object to be bonded from vertically downward; After the first activation step, the second object to be bonded is inverted so that the bonding surface of the second object to be bonded faces vertically upward, and then, in the second activation step, the nitrogen radicals are irradiated onto the bonding surface of the second object to be bonded from vertically above. Joining method.

15. the second object to be bonded has an electrode and an insulating film provided on the bonding surface, the insulating film is formed of an oxide, an oxynitride, or a nitride; The joining method according to claim 14.

16. The first activation step is carried out under reduced pressure, After the first activation step, the second activation step is performed under reduced pressure while maintaining the second object to be bonded in a state where the second object is placed under reduced pressure. The joining method according to claim 14 or 15.

17. In the first activation step, bonding surfaces of the plurality of second objects to be bonded that are in contact with or connected to each other immediately after dicing of a dicing substrate that is a base for at least one of the second objects to be bonded are activated. The joining method according to any one of claims 14 to 16.

18. The method further includes a cleaning step of cleaning the bonding surface of at least one of the second objects before the bonding step. The joining method according to any one of claims 14 to 17.

19. the first object to be bonded is a substrate, the second object to be bonded is a chip, In the cleaning step, the bonding surface of at least one second object to be bonded is cleaned in a state where the at least one second object to be bonded is attached to a sheet formed from a resin and held by a holding frame. The joining method according to claim 18.

20. There are a plurality of second objects to be bonded, the plurality of second objects to be bonded are generated by dicing a dicing substrate that serves as a base for the plurality of second objects to be bonded, In the cleaning step, the second objects to be bonded are cleaned in a state in which the second objects to be bonded are in contact with or connected to each other immediately after the dicing substrate is diced; The method further includes a separating step of, before the joining step, stretching the sheet held by the holding frame to separate the plurality of second objects from each other. The joining method according to claim 19.

21. the second objects to be bonded are chips each having a stepped portion on the periphery of the bonding surface side, a second object to be bonded supply step of supplying at least one second object to be bonded; a second object to be bonded transport step of transporting the at least one second object to be bonded that is supplied, In the second object transporting step, the second object is transported while a second object holding part holds a part of the step part of at least one second object on the opposite side to the bonding surface side. The joining method according to any one of claims 14 to 20.

22. There are a plurality of second objects to be bonded, In the joining step, the head is brought into contact with a side of the sheet to which the plurality of second objects to be joined is opposite to the side of the sheet to which the plurality of second objects to be joined is attached, and the head is moved in a direction approaching the first object to be joined, thereby joining at least one of the second objects to be joined to the first object to be joined. The bonding method according to any one of claims 14 to 21.

Images