High conductance vacuum valve for wafer processing systems.

Abstract

A semiconductor processing chamber performs various wafer processing operations, including at least one of pumping the chamber to a high vacuum and adjusting the vacuum (e.g., during the introduction of process gases, when gases penetrate the chamber, when outgassing due to a reaction, when the wafer is off-gassed, etc.). A vacuum valve may be fluidly connected between the vacuum pumping system and at least a portion of the semiconductor processing chamber. The vacuum valve may be a high-conductance multi-stage poppet valve that allows for a relatively high gas flow rate and / or a low pressure drop. In an open state, the multi-stage design of the poppet valve may have an overall larger cross-sectional opening than a comparable single-stage poppet valve could achieve, thereby increasing conductance.

Description

[Background technology]

[0001] Incorporation by Reference A PCT application has been filed concurrently herewith as part of this application. Each application identified in the concurrently filed PCT application to which this application claims benefit or priority is incorporated herein by reference in its entirety for all purposes.

[0002] Vacuum pumps are widely used in semiconductor processing equipment to provide a clean and / or low-pressure environment within a processing chamber. Such vacuum pumps are fluidly connected to the processing chamber via valves, such as poppet-type valves, and may be used to remove by-products, unused etch reactants, unused deposition precursors, and / or other gases and materials from the processing chamber.

[0003] The background art description provided herein is intended to provide a general context for the present disclosure. Work by the presently named inventors, to the extent described in this background art section, as well as aspects of the description that may not otherwise be considered prior art at the time of filing, are not admitted, expressly or impliedly, as prior art against the present disclosure. Summary of the Invention

[0004] In one aspect, an apparatus may be provided that includes a multi-stage poppet valve, the multi-stage poppet valve may include a valve seat including a gas-permeable region, and two or more movable bodies including (i) a movable central body including a gas-impermeable region, and (ii) at least one movable intermediate body, each movable intermediate body including a gas-impermeable region and a gas-permeable region, the gas-impermeable region of each movable intermediate body surrounding the gas-permeable region of that movable intermediate body, each movable body may be translatable relative to the valve seat along a first axis, and the movable bodies may be transitionable between at least a first configuration and a second configuration. The movable bodies may be positioned proximate to the valve seat so as to provide a first amount of flow restriction in the first configuration. The movable bodies may, in the second configuration, provide a second amount of flow restriction that is less than the first amount of flow restriction, and may be arranged along the first axis and spaced apart relative to each other and the valve seat such that a first gap between at least two of the movable bodies in the first set of movable bodies is visible along the first axis and a corresponding second gap is visible along the first axis, the second gap being between each of the movable bodies in the first set of movable bodies and the valve seat.

[0005] In another aspect of the device, the movable body may be further transitionable between successive additional configurations between the first configuration and the second configuration, and as the movable body transitions from the first configuration through the successive additional configurations to the second configuration, the movable body may provide a variable amount of flow restriction that decreases from a first amount of flow restriction to a second amount of flow restriction.

[0006] In another aspect, the device may further include at least one actuator configured to translate the movable bodies, each of the movable bodies may include a body, and each movable body of the movable bodies may include at least one wing extending from the body and mechanically coupled to a respective portion of the actuator.

[0007] In another aspect, the device may further include at least one actuator configured to translate the movable bodies, wherein at least one of the movable bodies may include a body, at least one of the movable bodies may include at least one wing extending from the body and mechanically coupled to a portion of the actuator, and at least one of the movable bodies may include at least one bracket extending from the body and mechanically engaging another of the movable bodies for partial, small-scale translation of the movable body between the first configuration and the second configuration.

[0008] In another aspect, the apparatus may further include a semiconductor processing chamber having a wall defining an interior space, a process gas delivery system configured to introduce one or more process gases into the interior space of the semiconductor processing chamber, and a vacuum foreline in fluid communication with the interior space of the semiconductor processing chamber. The multi-stage poppet valve may be fluidly disposed between the vacuum foreline and the process gas delivery system.

[0009] In another aspect, the apparatus may further include at least one actuator configured to translate the movable body, a substrate support, and a substrate support arm configured to hold the substrate support within a semiconductor processing chamber. The substrate support arm may mechanically connect a wall of the semiconductor processing chamber to the substrate support, and each of the movable bodies may include a body and at least one wing extending from the body, the wing of each movable body may mechanically connect the movable body to a portion of the actuator, and the substrate support arm and the at least one wing of each movable body may be aligned along a second axis parallel to the first axis.

[0010] In another aspect of the apparatus, when the multi-stage poppet valve is in the second configuration, there may be an average gap X between adjacent portions of the movable intermediate body and the wall of the semiconductor processing chamber, and there may be an average gap Y between adjacent portions of the movable central body and the wall of the semiconductor processing chamber. The movable intermediate body may be configured to translate along the first axis a distance of at least 75% of X when transitioning from the first configuration to the second configuration. Similarly, the movable central body may be configured to translate along the first axis a distance of at least 75% of Y when transitioning from the first configuration to the second configuration.

[0011] In another aspect of the device, the distance that the movable intermediate body is configured to translate along the first axis when transitioning from the first configuration to the second configuration can be no more than 125% of X. The distance that the movable central body is configured to translate along the first axis when transitioning from the first configuration to the second configuration can be no more than 125% of Y.

[0012] In another aspect of the device, the multi-stage poppet valve may further include a first actuator or set of actuators configured to translate the movable central body along the first axis and between the first and second configurations at least partially independent of the movable intermediate body, and a second actuator or set of actuators configured to translate the movable intermediate body along the first axis and between the first and second configurations at least partially independent of the movable central body.

[0013] In another aspect of the device, the movable body may be further transitionable to a third configuration to provide a third amount of flow restriction, which may be between the first amount and the second amount, and in the third configuration, the movable central body may be positioned at a spaced position along the first axis relative to the valve seat and the movable intermediate body may be positioned proximate to the valve seat, and the multi-stage poppet valve may further include at least one actuator and at least one shaft translated along the first axis by operation of the at least one actuator. The shaft may have (i) a first portion that engages with the movable central body and (ii) a second portion that engages with the movable intermediate body.

[0014] In another aspect of the device, the movable body may be further movable to a third configuration to provide a third amount of flow restriction between the first amount and the second amount, where the movable central body is spaced apart from the valve seat along the first axis and the movable intermediate body is proximate to the valve seat. The multi-stage poppet valve may further include at least one actuator and at least one stepped shaft coupled to both the movable central body and the movable intermediate body. A first portion of the stepped shaft may have a first diameter, and a second portion of the stepped shaft may have a second diameter greater than the first diameter. The first portion of the stepped shaft may be coupled to the movable central body and may pass between portions of the movable intermediate body. The second portion of the stepped shaft may be configured to press against portions of the movable intermediate body to translate the movable intermediate body along the first axis.

[0015] In another aspect of the device, the multi-stage poppet valve may further include at least a first seal and a second seal. The first seal may contact both the valve seat and the movable intermediate body when at least in the first configuration. The second seal may contact both the movable intermediate body and the movable central body when at least in the first configuration.

[0016] In another aspect of the device, in the first configuration, the movable intermediate body may be nested within the gas permeable region of the valve seat, and the movable central body may be nested within the gas permeable region of the movable intermediate body, such that the valve seat, movable intermediate body, and movable central body may all overlap one another when viewed along an axis perpendicular to the first axis.

[0017] In another aspect of the device, in the first configuration, the movable body and the valve seat may be arranged in a stacked arrangement.

[0018] In another embodiment of the device, the second configuration may provide a minimum flow restriction state for the multi-stage poppet valve.

[0019] In another aspect of the device, the valve seat and the two or more movable bodies may be configured such that in the first configuration the multi-stage poppet valve is generally gas impermeable.

[0020] In another embodiment of the device, the gas impermeable regions of the two or more movable bodies may collectively overlap all of the gas permeable regions of the valve seat when viewed along the first axis.

[0021] In another aspect of the device, the movable central body and the movable intermediate body may be further movable to a third configuration, where the movable intermediate body is disposed in a spaced-apart relationship from the valve seat and the movable central body is disposed proximate to the movable intermediate body, and the movable central body may be translatable along the first axis independently of the movable intermediate body during at least a portion of a transition between the second and third configurations.

[0022] In another aspect of the device, the movable central body and the movable intermediate body may be further movable to a third configuration, where the movable intermediate body is disposed proximate the valve seat and spaced apart from the valve seat and the intermediate body. The movable central body may be translatable along the first axis independently of the movable intermediate body during at least a portion of the transition between the first and third configurations. The movable central body and the movable intermediate body may be translatable together along the first axis during at least a portion of the transition between the second and third configurations.

[0023] In another embodiment of the device, the movable central body may be disk-shaped, the movable intermediate body may be ring-shaped, and the gas permeable region of the valve seat may be disk-shaped.

[0024] In another embodiment of the device, the first configuration may provide a maximum flow restriction state and the second configuration may provide a minimum flow restriction state. The movable central body may move a distance X along the first axis when moving from the first configuration to the second configuration. The movable intermediate body may move a distance Y along the first axis when moving from the first configuration to the second configuration. In such an embodiment, the movable intermediate body may have a ring shape with an average radial width A, where A is up to 125% of X minus Y.

[0025] In another embodiment of the device, the movable central body may move a distance X when moving from the first configuration to the second configuration. In such a case, the valve seat may have a gas impermeable region having an average radial width A, and A is up to 125% of X.

[0026] In another embodiment of the device, the first configuration may be a maximum flow restriction state, and the multi-stage poppet valve may be gas permeable in the maximum flow restriction state.

[0027] In another aspect of the device, when the multi-stage poppet valve is in a maximum flow restriction state, one or more gaps may exist between each pair of the valve seat, the movable intermediate body, and the movable center body.

[0028] In another aspect, an apparatus may include a semiconductor processing chamber at least partially enclosing a space having an average transverse cross-sectional dimension, a process gas delivery system configured to introduce one or more process gases into the semiconductor processing chamber, and a vacuum foreline in fluid communication with the semiconductor processing chamber. The multi-stage poppet valve may be fluidly disposed between the process gas delivery system and the vacuum foreline, and the movable intermediate body may be configured to translate a first distance between a first configuration in which the movable intermediate is proximate to a valve seat and a second configuration in which the movable intermediate is disposed a first distance away from the valve seat. The movable intermediate body may have an average transverse cross-sectional dimension, and the movable central body may be configured to extend relative to the movable intermediate body through a gas permeable barrier between the movable central body and the gas permeable barrier. region The movable central body may be configured to translate a second distance between a first configuration in which the movable central body is proximate to the valve seat and a second configuration in which the movable central body is positioned a second distance away from the valve seat and a second distance away from the movable intermediate body minus the first distance. The movable central body may have an average transverse cross-sectional dimension, and the first distance may be between 35% and 65% of the average transverse cross-sectional dimension of the volume of the semiconductor processing chamber minus the average transverse cross-sectional dimension of the movable intermediate body. The second distance may be between 35% and 65% of the average transverse cross-sectional dimension of the movable intermediate body minus the average transverse cross-sectional dimension of the movable central body.

[0029] In another embodiment of the device, the first distance may be between 75% and 125% of the second distance.

[0030] In another aspect of the apparatus, at least a portion of the semiconductor processing chamber may be cylindrical and may have a diameter equal to the average lateral cross-sectional dimension of the semiconductor processing chamber.

[0031] In another embodiment of the device, the movable intermediate body may be ring-shaped and the movable central body may be circular.

[0032] In another embodiment, the apparatus may further include at least one turbomolecular pump fluidly connected to the vacuum foreline.

[0033] In another aspect, the apparatus may further include a semiconductor processing chamber, a process gas delivery system configured to introduce one or more process gases into the semiconductor processing chamber, and a vacuum foreline in fluid communication with the semiconductor processing chamber. The first configuration may include a maximum flow restriction state. The second configuration may include a minimum flow restriction state. When the movable intermediate is in the second configuration, a first minimum cross-sectional area may exist between the movable intermediate and the semiconductor processing chamber, and a second minimum cross-sectional area may exist between the movable intermediate and the valve seat. The first minimum cross-sectional area may be between 75% and 125% of the second minimum cross-sectional area. When the movable intermediate is in the second configuration and the movable central body is in the second configuration, a third minimum cross-sectional area may exist between the movable central body and the semiconductor processing chamber, and a fourth minimum cross-sectional area may exist between the movable central body and the gas permeable region of the movable intermediate. The third minimum cross-sectional area may be between 75% and 125% of the sum of the second minimum cross-sectional area and the fourth minimum cross-sectional area.

[0034] In another embodiment, the apparatus may further include at least one turbomolecular pump fluidly connected to the vacuum foreline.

[0035] In another aspect, an apparatus may be provided that may include a semiconductor processing chamber including a substrate support, the semiconductor processing chamber having a substrate support and chamber walls defining a first space above the substrate support and a second space below the substrate support; a process gas delivery system configured to introduce one or more process gases into the semiconductor processing chamber; a vacuum foreline in fluid communication with the first space and the second space of the semiconductor processing chamber; and a valve fluidly disposed between the process gas delivery system and the vacuum foreline, wherein the second space has an average horizontal cross-sectional width, the valve has a valve throat having the average horizontal cross-sectional width, and the average horizontal cross-sectional width of the valve throat is between 85% and 100% of the average horizontal cross-sectional width of the second space.

[0036] In another aspect of the device, the valve may include a butterfly vent having at least a first body and a second body, the first body and the second body being configured to be transitionable between at least a first configuration and a second configuration relative to one another through rotation of one or both of the first body and the second body about an axis of rotation. In the first configuration, the gas permeable region of the first body may be in a state of closest overlap with the gas permeable region of the second body. In the second configuration, the gas permeable region of the first body may be in a state of closest overlap with the gas impermeable region of the second body, and the gas permeable region of the second body may be in a state of closest overlap with the gas impermeable region of the first body.

[0037] In another aspect of the device, the valve may include an iris valve having a movable blade configured to be transitional between a first configuration in which the movable blade is at least partially recessed below a periphery of the iris valve and a second configuration in which the movable blade extends into a central region of the iris valve. [Brief explanation of the drawings]

[0038] [Figure 1] FIG. 1 is a schematic diagram of an example semiconductor processing system for performing etching, deposition, and other operations, according to some embodiments.

[0039] [Figure 2] FIG. 2 is a perspective view of a multi-stage poppet valve according to some embodiments.

[0040] [Figure 3A] FIG. 3A is a cross-sectional side view of a semiconductor processing system including a high conductance multi-stage poppet valve according to some embodiments. [Figure 3B] FIG. 3B is a cross-sectional perspective view of a semiconductor processing system including a high conductance multi-stage poppet valve according to some embodiments.

[0041] [Figure 4] FIG. 4 is a cross-sectional side view of a semiconductor processing system including a high conductance multi-stage poppet valve according to some embodiments.

[0042] [Figure 5] FIG. 5 is a cross-sectional side view of a semiconductor processing system including a high conductance multi-stage poppet valve according to some embodiments.

[0043] [Figure 6A] FIG. 6A illustrates an example of a multi-stage poppet valve in various operating states according to some embodiments. [Figure 6B] FIG. 6B illustrates an example of a multi-stage poppet valve in various operating states according to some embodiments. [Figure 6C] FIG. 6C illustrates an example of a multi-stage poppet valve in various operating states according to some embodiments.

[0044] [Figure 7A] FIG. 7A illustrates an example of a multi-stage poppet valve in various operating states according to some embodiments. [Figure 7B] FIG. 7B illustrates an example of a multi-stage poppet valve in various operating states according to some embodiments.

[0045] [Figure 7C] FIG. 7C illustrates an example of a multi-stage poppet valve in various operating states according to some embodiments.

[0046] [Figure 8A] FIG. 8A illustrates an example of a multi-stage poppet valve according to some embodiments. [Figure 8B] FIG. 8B illustrates an example of a multi-stage poppet valve according to some embodiments. [Figure 8C] FIG. 8C illustrates an example of a multi-stage poppet valve according to some embodiments. [Figure 8D]FIG. 8D illustrates an example of a multi-stage poppet valve according to some embodiments.

[0047] [Figure 8E] FIG. 8E illustrates an example of a multi-stage poppet valve in various operating states according to some embodiments. [Figure 8F] FIG. 8F illustrates an example of a multi-stage poppet valve in various operating states according to some embodiments. [Figure 8G] FIG. 8G illustrates an example of a multi-stage poppet valve in various operating states according to some embodiments.

[0048] [Figure 9A] FIG. 9A illustrates an example of a high conductance vacuum valve according to some embodiments. [Figure 9B] FIG. 9B illustrates an example of a high conductance vacuum valve according to some embodiments. [Figure 9C] FIG. 9C illustrates an example of a high conductance vacuum valve according to some embodiments.

[0049] [Figure 10A] FIG. 10A illustrates an example of a multi-stage poppet valve according to some embodiments. [Figure 10B] FIG. 10B illustrates an example of a multi-stage poppet valve according to some embodiments. [Figure 10C] FIG. 10C illustrates an example of a multi-stage poppet valve according to some embodiments. [Figure 10D] FIG. 10D illustrates an example of a multi-stage poppet valve according to some embodiments. [Figure 10E] FIG. 10E illustrates an example of a multi-stage poppet valve according to some embodiments. [Figure 10F] FIG. 10F illustrates an example of a multi-stage poppet valve according to some embodiments.

[0050] [Figure 11]FIG. 11 is a schematic diagram illustrating an example of a control module for controlling a semiconductor manufacturing tool including a vacuum pumping system and a vacuum valve, according to some embodiments. DETAILED DESCRIPTION OF THE INVENTION

[0051] In the following description, numerous specific details are set forth to provide a thorough understanding of the presented embodiments. The disclosed embodiments may be practiced without some or all of these specific details. In other instances, well-known process operations have not been described in detail so as not to unnecessarily obscure the disclosed embodiments. While the disclosed embodiments are described in connection with particular embodiments, it will be understood that this is not intended to limit the disclosed embodiments. The techniques and devices disclosed herein may be implemented in a variety of ways, including, but not limited to, the various implementations described below. Those skilled in the art will appreciate that the techniques and devices disclosed herein can be used to create other implementations consistent with the information disclosed herein, and that such alternative implementations are also considered within the scope of the present disclosure.

[0052] term The following terms are used throughout this specification.

[0053] The terms “semiconductor wafer,” “wafer,” “substrate,” “wafer substrate,” and “partially fabricated integrated circuit” are sometimes used interchangeably. Those skilled in the art will understand that the term “partially fabricated integrated circuit” can refer to a semiconductor wafer during any of the many stages of integrated circuit fabrication on a semiconductor wafer. Wafers or substrates used in the semiconductor device industry typically have diameters of 200 mm, 300 mm, or 450 mm. This detailed description assumes that embodiments are implemented on wafers, although the present disclosure is not so limited. Workpieces may be of various shapes, sizes, and materials, including, for example, large rectangular substrates used in the manufacture of display screens. In addition to semiconductor wafers, other workpieces that may utilize the disclosed embodiments include various articles such as printed circuit boards, magnetic recording media, magnetic recording sensors, mirrors, optical elements, micromechanical devices, and the like.

[0054] As used herein, a "semiconductor device manufacturing operation" or "manufacturing operation" is an operation performed during the manufacture of a semiconductor device. Typically, the overall manufacturing process includes multiple semiconductor device manufacturing operations, each performed in its own semiconductor manufacturing tool, such as a plasma reactor, an electroplating cell, a chemical-mechanical planarization tool, or a wet etching tool. Categories of semiconductor device manufacturing operations include subtractive processes, such as etching processes and planarization processes, and additive processes, such as deposition processes (e.g., physical vapor deposition, chemical vapor deposition, atomic layer deposition, electrochemical vapor deposition, and electroless plating). In the context of an etching process, a substrate etching process may include a process that etches a mask layer or, more generally, a process that etches any layer of material previously deposited and / or otherwise present on the substrate surface. Such an etching process may etch a stack of layers within a substrate.

[0055] A "manufacturing apparatus" or "manufacturing tool" refers to a device in which a manufacturing process is performed. A manufacturing apparatus may include a processing chamber in which a workpiece resides during processing. Generally, when in use, a manufacturing apparatus performs one or more semiconductor device manufacturing operations. Examples of manufacturing apparatus for semiconductor device manufacturing include subtractive process reactors and additive process reactors. Examples of subtractive process reactors include dry etch reactors (e.g., chemical and / or physical etch reactors), wet etch reactors, and ashers. Examples of additive process reactors include chemical vapor deposition reactors, atomic layer deposition reactors, physical vapor deposition reactors, and electroplating cells.

[0056] As used herein, "gas-tight" and "gas-impermeable" should be understood to refer to structures or interfaces that are generally gas-tight under normal operating conditions. Nevertheless, a gas-tight seal may allow a minimum amount of gas to pass through the seal. For example, a high-vacuum gate valve may be 10 -8 From 10 -9 The pressure may have a leak rate on the order of 100 Torr liters / second. Such leak rate amounts are typically defined and budgeted for during device design and verified using methods described in standards such as SEMI E-16. It will be understood that while the seals and valves used to maintain the pressure environments discussed herein may not provide a theoretically perfect seal due to such negligible leak rates, such seals and valves are still described as "preventing" fluid flow when closed (i.e., as being "gas-tight"). As used herein, "gas-tight" and "gas-tight" refer to a pressure differential of at least 100 Torr and a leak rate of at least 100 Torr when using helium as the tracer gas. -4 It refers to a structure or interface that has a leak rate of 10 liters per second or less. On the other hand, "gas permeability" refers to a structure or interface that has a leak rate of 10 liters per second or less when a pressure difference of 100 Torr or less is used and helium is used as a tracer gas. -4 Refers to a structure or interface that has a leakage rate greater than liters per second.

[0057] Introduction and Context Semiconductor wafer processing typically requires strict environmental conditions within semiconductor processing chambers. Gas composition, density, pressure, temperature, etc. may all be required to be within specific pre-established ranges to successfully process semiconductor wafers. Providing these environmental conditions may require, for example, directing various types of gas flows, such as evacuating gases from portions of the semiconductor tool, to create or maintain a specific low-pressure, e.g., vacuum, environment.

[0058] Gas flows can generally be classified into one of three categories: viscous flow, transitional flow, and molecular flow. Viscous flow generally refers to fluid flow under conditions where the mean free path of the molecules in the fluid flow is small, for example, compared to the smallest cross-section of the duct through which the fluid flows. In the case of fluid flow through a large chamber, viscous flow can be characterized by the mean free path of the molecules being small compared to the smallest overall internal dimensions of the chamber. In viscous flow, for example, the density of gas molecules is generally high enough that many of the gas molecules collide with other gas molecules in the flow before colliding with, for example, the chamber walls. As a result, the mean free path of gas molecules—the average distance a gas molecule travels in a fluid before colliding with another molecule—is significantly shorter than the internal dimensions of the space through which the flow occurs. In viscous flow, the flow of some portions of a material can cause other continuous portions of the material to exhibit similar flow characteristics.

[0059] Molecular flow generally refers to fluid flow under conditions where the mean free path of the molecules in the fluid flow is much greater than the characteristic system dimensions, such as the smallest cross-section of the duct through which the fluid flows. For fluid flow through a large chamber, the mean free path can be much greater than the smallest overall internal dimensions of the chamber, for example. In molecular flow, the density of gas molecules is low enough that many of the gas molecules collide with the chamber walls before colliding with other gas molecules. Because collisions between molecules are rare in molecular flow, the flow of one gas molecule rarely has a significant effect on other gas molecules in the flow. Whether the flow is viscous or molecular at a given temperature depends largely on the density of the gas in the flow. At a given temperature, viscous flow occurs at much higher pressures, such as 1 mTorr to 760 Torr, compared to, for example, 0.1 mTorr or less for molecular flow.

[0060] Transitional flow generally refers to the transition region between viscous and molecular flow, where both wall collisions (e.g., typical of molecular flow) and intermolecular collisions (e.g., typical of viscous flow) play a role in determining the flow characteristics.

[0061] For vacuum pumping systems, an important characteristic is conductance, which is the volumetric flow rate of gas between two points along a flow path divided by the pressure drop between those two points. Because the flow path of each gas molecule in molecular flow conditions is, statistically speaking, unaffected by other gas molecules, a vacuum pump operating in molecular flow conditions to remove gas from a chamber generally relies on the gas molecule bouncing off the chamber walls until it happens to bounce in a way that leads to the throat of the vacuum pump. Thus, vacuum pumps, particularly when operating in molecular flow conditions, find significant performance advantages (e.g., higher conductance) when their throats are relatively large (in cross-sectional area) and there is a relatively unobstructed path between the chamber and the throat of the vacuum pump. As a result, it is often desirable to increase or maximize the size of the vacuum valve, at least in terms of cross-sectional area, to increase or maximize conductance.

[0062] The vacuum pumping system may include one or more vacuum valves fluidly disposed between the one or more vacuum pumps and the semiconductor processing chamber. The vacuum valve(s) may facilitate regulating the pressure within the semiconductor processing chamber and / or the gas flow rate through the semiconductor processing chamber and the vacuum pumping system. In some embodiments, the vacuum valve(s) may hermetically isolate the semiconductor processing chamber and the vacuum pumping system from each other when in a closed state.

[0063] One type of vacuum valve is a poppet valve. A poppet valve generally includes a valve seat (which has a valve throat through which gas flows) and a movable plug. To close the valve and block or reduce gas flow through the valve throat, the movable plug moves toward the valve seat and eventually presses against or is seated within the valve seat. To open the valve and allow or increase gas flow through the valve throat, the movable plug is moved away from the valve seat. The movement of the plug is generally translational, for example, along an axis perpendicular to the surface of the valve seat against which the plug presses.

[0064] When increasing the conductance of a vacuum pumping system that utilizes a poppet valve, it is generally desirable to increase the size of the poppet valve through which the vacuum pump draws gas in order to improve conductance into the vacuum pumping system, which generally results in a corresponding increase in the size of the moveable plug. However, as the poppet valve plug becomes larger, the clearance between the plug and the interior wall of the processing chamber decreases, which can ultimately become a bottleneck in the conductance of the system (e.g., increasing the size of the poppet valve beyond a certain point actually acts to reduce the conductance of the system compared to some smaller sized poppet valves).

[0065] The present disclosure relates to a high-conductance vacuum valve for semiconductor processing systems. The high-conductance vacuum valve may, in some embodiments, be a multi-stage poppet valve. Multi-stage poppet valves can provide higher levels of conductance than single-stage poppet valves, particularly when the poppet valve is constrained by the dimensions of the semiconductor processing chamber and the vacuum pumping system is operating in the molecular flow regime. Alternatively, the high-conductance vacuum valve may be implemented with other styles of valves, such as butterfly vents, butterfly valves, and / or iris valves, as discussed in more detail in connection with Figures 9A, 9B, and 9C.

[0066] Semiconductor processing system with high conductance vacuum valve 1 schematically illustrates one example of a tool 100 (e.g., a semiconductor processing system). Tool 100 may be a manufacturing tool including a semiconductor processing chamber 102, which may include a plasma processing confinement chamber 104 therein. In some other embodiments, tool 100 may be a metrology tool or other tool involved in semiconductor manufacturing. A plasma power supply tuned by a matching network 108 107The power window 112 supplies power to a transformer-coupled plasma (TCP) coil 110 located near a power window 112, generating a plasma 114 within the plasma processing confinement chamber 104 by providing wireless power to the process gas within the chamber 104 via inductive coupling. The TCP coil (top power source) 110 may be configured to generate a diffuse profile within the plasma processing confinement chamber 104. For example, the TCP coil 110 may be configured to generate a toroidal power distribution within the plasma 114. The power window 112 may be generally transparent to radio frequency energy, but is provided to isolate the TCP coil 110 from the plasma processing confinement chamber 104 while allowing energy to pass from the TCP coil 110 to the plasma processing confinement chamber 104. A wafer bias voltage power supply 116, tuned by a matching network 118, supplies power to an electrode in the form of a substrate support 120 to set a bias voltage on a substrate 132 supported by the substrate support 120. A controller 124 controls the plasma power supply. 107 ,gas Source 1 30 (eg, process gas delivery system), wafer bias voltage power supply 116, valve 143, pump 144, and optional roughing pump 145.

[0067] The gas source 130 is fluidly connected to the semiconductor processing chamber 102 through a gas inlet 182 in the showerhead 142. The gas inlet 182 may be located at any strategic location within the plasma processing confinement chamber 104 and may take any form for injecting gases. Process gases and by-products are removed from the plasma processing confinement chamber 104 through a pressure control valve 143 and a pump 144, which also serve to maintain a particular pressure within the plasma processing confinement chamber 104.

[0068] Vacuum pumps 144 and 145 may be fluidly connected to the semiconductor processing chamber 102 and may be used to draw process gases from the semiconductor processing chamber 102 and maintain a particular pressure within the semiconductor processing chamber 102. The vacuum pumps 144 and 145 may be fluidly connected to a valve 143 via a vacuum foreline 146. The valve 143 may control the amount of conductance between the vacuum pump 144 and the semiconductor processing chamber 102 and therefore help control the vacuum level within the semiconductor processing chamber 102. In some embodiments, the vacuum pump 145 may include a single-stage or two-stage mechanical dry pump and / or a turbomolecular pump. In some embodiments, the vacuum pump 144 may be activated after each deposition or etching operation to purge the semiconductor processing chamber 102. In some embodiments, the vacuum pump 144 may be activated during deposition, etching, or other fabrication operations, while the valve 143 is used to adjust the level of vacuum within the chamber 102. A vacuum pump 144 may be fluidly connected to the semiconductor processing chamber 102 and serve to remove etching gases, deposition precursors, and reaction by-products from the semiconductor processing chamber 102. In some embodiments, the pump 144 is a high vacuum pump, such as a turbomolecular pump. The output of the pump 144 may be coupled to a roughing pump 145. The output of the roughing pump 145 may be exhausted to atmosphere or another gas sink.

[0069] Tool 100 may be coupled to equipment (not shown) when installed in a cleanroom or manufacturing facility. The equipment includes plumbing that may provide process gases, vacuum, temperature control, and environmental particle control. In some such embodiments, pumps 144 and / or pumps 145 may be part of the equipment and may be shared by multiple tools 100. As an example, valves 143 of multiple manufacturing tools 100 may be fluidly connected to one or more common pumps 144 and / or pumps 145 via a network of vacuum forelines 146 (which may branch as needed). Thus, these pieces of equipment may be coupled to tool 100 when installed in a target manufacturing facility. Additionally, tool 100 may be coupled to a transfer chamber that enables robots to load and unload substrates into and from semiconductor processing chambers 102 using automation.

[0070] In some embodiments, tool 100 may be a multi-station tool (e.g., multiple fabrication stations operating on multiple wafers and sharing a common semiconductor processing chamber). In some such embodiments, the semiconductor processing chamber may have a larger cross-section, and the size of valve 143 may be correspondingly scaled up. In some other such embodiments, there may be a separate valve 143 for each station of the multi-station tool. Thus, the teachings herein are applicable to multi-tool arrangements as well.

[0071] As shown in FIG. 1 , semiconductor processing chamber 102 may have width 103, and valve 143 may have width 150. Valve 143 may be configured to provide a high level of conductance (e.g., a relatively high gas flow rate and / or a relatively low pressure drop through the valve). Generally, larger valves have a larger throat (e.g., a cross-sectional area through which gas can flow) and therefore a greater conductance than similar, smaller valves. Therefore, it is generally desirable to increase the size of the valve (e.g., increase width 150) to increase conductance. This general trend may be broken for certain types of valves if the clearance between the enlarged valve and adjacent structures (e.g., walls of semiconductor processing chamber 102) decreases, thereby limiting conductance. As an example, if valve 143 is a single-stage poppet valve with a plug that moves perpendicular to the width 150 of the valve, and valve 143 is enlarged so that width 150 of valve 143 matches width 103 of the semiconductor processing chamber, there will be no clearance between the poppet valve plug and the wall of the semiconductor processing chamber, and therefore gas flow through the poppet valve will be severely restricted or even blocked, even when the poppet valve is open.

[0072] To address these issues, the inventors have conceived a high-conductance vacuum valve, such as a multi-stage poppet valve. A multi-stage poppet valve may include a plug split into a movable center body and a movable intermediate body. By splitting the plug into a movable center body and a movable intermediate body, the potential total conductance of the poppet valve is increased compared to a single-stage poppet valve. As an example, the movable intermediate body may have an outer diameter similar to that of the single-stage plug, providing a large throat while maintaining clearance with adjacent structures (such as the walls of the semiconductor processing chamber 102). In its open configuration, the movable center body may expose additional gas-permeable regions of the movable intermediate body, increasing the potential total conductance beyond that achievable with a single-stage poppet valve.

[0073] Multi-stage poppet valve FIG. 2 is a perspective view of an example multi-stage poppet valve 200 that may be used as the valve 143 of the tool 100. The multi-stage poppet valve 200 may include a valve seat 240 and two or more movable bodies, such as a movable central body 210 and a movable intermediate body 220. If desired, the valve 200 may include additional movable bodies. As an example, the valve 200 may include a movable central body 210 and multiple intermediate bodies (e.g., a central disk, a first ring surrounding the central disk, a second ring surrounding the first ring, a third ring surrounding the second ring, etc.). Generally, increasing the number of movable bodies in this manner increases the overall conductance potential of the valve 200. However, increasing the number of movable bodies in this manner may require additional vertical clearance for each additional movable body, as will become apparent from the following discussion. Therefore, space constraints may dictate the selection of a particular number of movable bodies.

[0074] The movable central body 210 can include a gas-impermeable region 211; in the illustrated example, the gas-impermeable region 211 of the movable central body 210 is a circular disk, although other shapes could potentially be used as well, if desired. One or more vanes, such as vanes 212, extend from the movable central body 210 and can mechanically connect the movable central body 210 to one or more actuator shafts or other structures that can translate vertically, such that the movable central body 210 can also translate vertically. The vanes 212 can be formed from an integral extension of the movable central body 210 (e.g., the vanes and the movable central body 210 can be a single, integral part), or the vanes 212 can be formed of a separate structure attached to the movable central body. The vanes 212 can extend beyond the periphery of the gas-permeable region 242 of the valve seat 240 (e.g., the opening formed by the valve seat 240). There may be any desired number of wings 212, including a single wing 212. The movable central body 210 may translate along a first axis 213 that is perpendicular to the plane in which the movable central body 210 lies.

[0075] Movable intermediate body 220 may include gas permeable region 223 (e.g., a central opening in the ring shape in FIG. 2 , shown with cross-hatching) and gas impermeable region 221 (e.g., a solid region in the ring shape in FIG. 2 , shown with a dashed outline). Gas permeable region 223 and gas impermeable region 221 extend below movable central body 210 in the perspective of FIG. 2. One or more wings, such as wings 222, extend from movable intermediate body 220 and may mechanically connect movable intermediate body 220 to one or more actuator shafts or other structures that can be vertically translated, such that movable intermediate body 220 can also be translated vertically. Wings 222 may be formed from an integral extension of movable intermediate body 220 (e.g., wings and movable intermediate body 220 may be a single, integral part), or wings 222 may be formed from a separate structure attached to movable intermediate body 220. The vanes 222 may extend beyond the periphery of the gas permeable region 242 of the valve seat 240 (e.g., the opening formed by the valve seat 240). There may be any desired number of vanes, including a single vane. The movable intermediate 220 may also be translatable along the first axis 213.

[0076] As discussed in further detail below, the movable central body 210 is translatable along a first axis 213 to a first position, a second position, and one or more positions therebetween (e.g., a continuum of additional positions between the first and second positions). In the first position, the gas impermeable region 211 of the movable central body 210 is positioned proximate to the gas permeable region 223 of the movable intermediate body 220, thus limiting conductance to a first amount (which may be no more than zero conductance). In the second position, the movable central body 210 is positioned at a spaced position along the first axis 213 relative to the movable intermediate body 220. In one or more positions between the first and second positions, the movable central body is positioned somewhere between the first and second positions (e.g., a position partially spaced relative to the movable intermediate body 220 along the first axis 213). When the movable central body 210 is translated away from the movable intermediate body (at the second position or a position between the first and second positions), a gap exists between the movable central body 210 and the movable intermediate body 220 when viewed along a direction perpendicular to the first axis 213. Gases from within the semiconductor processing chamber 102 can flow through these gaps.

[0077] As discussed in further detail below, movable intermediate 220 is translatable along first axis 213 to a first position, a second position, and one or more positions therebetween (e.g., a continuum of additional positions between the first and second positions). In the first position, gas impermeable region 221 of movable intermediate 220 is positioned proximate to gas permeable region 242 of valve seat 240 (the position of which is shown by dashed lines in FIG. 2 ), thus limiting conductance between movable intermediate 220 and valve seat 240 to a first amount (which may be as little as zero conductance in situations where movable intermediate 220 and valve seat 240 contact each other). In the second position, movable intermediate 220 is positioned at a spaced-apart position along first axis 213 relative to valve seat 240. In one or more positions between the first and second positions, the movable central body is disposed somewhere between the first and second positions (e.g., a position partially spaced relative to the valve seat 240 along the first axis 213). When the movable intermediate body 220 translates away from the valve seat 240 (the second position, or a position between the first and second positions), a gap exists between the movable intermediate body 220 and the valve seat 240 when viewed along a direction perpendicular to the first axis 213. Gas from within the semiconductor processing chamber 102 can flow through these gaps. In some embodiments, the gas impermeable regions of the movable body (e.g., gas impermeable regions 211 and 221) may collectively overlap at least 90%, but less than 100%, of the gas permeable region 242 of the valve seat 240 when viewed along the first axis 213. In some other embodiments, the gas-impermeable regions of the movable body (e.g., gas-impermeable regions 211 and 221) may collectively overlap 100% of the gas-permeable region 242 of the valve seat 240 when viewed along the first axis 213.

[0078] The multi-stage poppet valve 200 may also include one or more actuators 230. Generally, any desired number of actuators may be present, and the actuators may be located in any desired locations. In the example of FIG. 2, the actuators 230 are linear actuators that translate their respective shafts 231, thereby translating the moveable body along the first axis 213. The actuators 230 may be any suitable type of actuator, such as a linear actuator, a rotary actuator, a stepper actuator, or a servo actuator. The actuators 230 may be electromechanical, electromagnetic, pneumatic, or hydraulic, for example. In some arrangements, the shaft 231 is a stepped shaft. In particular, the shaft 231 may have a first portion 232 and a second portion 234, with the second portion 234 having a larger cross-section than the first portion 232. Additionally, wings 222 of movable intermediate body 220 may be configured such that first portion 232 passes through openings, notches, cutouts, recesses, etc. in wings 222 without constraining, or in many cases without contacting, wings 222 as shaft 231 translates along first axis 213, while second portion 234 is too large to pass through the openings in wings 222. As discussed in more detail below, this type of configuration allows for semi-independent movement of movable central body 210 and movable intermediate body 220.

[0079] An example of the movement of the multi-stage poppet valve 200 in an embodiment utilizing a stepped shaft 231 is shown in Figures 6A, 6B, and 6C. Figures 6A, 6B, and 6C illustrate the moveable body stacked together and resting on the valve seat 240, but this is just one arrangement. An alternative arrangement in which the moveable body and valve seat are nested together is illustrated in Figures 7A, 7B, and 7C.

[0080] 6A, the multi-stage poppet valve 200 may be placed in a first configuration (e.g., a fully closed state) by retracting the stepped shaft 231 into the actuator 230. In the first configuration, the multi-stage poppet valve 200 may be in a minimum conductance state, which may be generally gas impermeable or generally slightly gas permeable. In embodiments in which the multi-stage poppet valve 200 is gas permeable in its first configuration, the conductance of the multi-stage poppet valve 200 in the first configuration may be orders of magnitude less than the conductance of the multi-stage poppet valve 200 in the second configuration (e.g., a fully open state).

[0081] As shown in Figure 6B, the multi-stage poppet valve 200 may be placed in a third configuration (e.g., a partially open state) by partially extending the stepped shaft 231 from the actuator 230 so that the movable center body 210 is raised into a spaced-apart relationship relative to the movable intermediate body 220. Because the thinner portion 232 of the stepped shaft 231 passes through the movable intermediate body 220, the movable intermediate body remains in close proximity to the valve seat during the transition between the first and third configurations (e.g., between the partially open state of Figure 6B and the fully closed state of Figure 6A).

[0082] As shown in Figure 6C, the multi-stage poppet valve 200 may be placed in a second configuration (e.g., a fully open position) by further extending the stepped shaft 231 from the actuator 230 such that the movable intermediate body 220 is raised into a spaced-apart relationship from the valve seat 240. Because the thicker portion 234 of the stepped shaft 231 cannot pass through the movable intermediate body 220, the thicker portion 234 of the stepped shaft 231 engages the movable intermediate body, allowing the movable intermediate body and movable center body to move together during the transition between the third configuration and the second configuration (e.g., between the partially open position of Figure 6B and the fully open position of Figure 6C).

[0083] The movable central body 210, the movable intermediate body 220, any other movable bodies, and the valve seat may be of any desired shape. In general, it may be desirable for these components of the valve 200 to conform to the adjacent wall 106 of the semiconductor processing chamber 102, although it should be noted that components or elements such as the vanes 212 and 222 and the shaft 231 may not be similarly conformal. In other words, if the semiconductor processing chamber is cylindrical, it may be desirable for the movable body and valve seat of the valve 200 to also be cylindrical or circular to provide increased conductance. Ru( Here, a relatively uniform gap exists between the semiconductor processing chamber and adjacent portions of the movable body and valve seat, and components such as vanes 212 and 222 and shaft 231 may reside within that gap. Similarly, if the semiconductor processing chamber is square or rectangular (at least in its external shape at the location of valve 200), it may be desirable for the movable body and valve seat of valve 200 to have a matching square or rectangular shape. Irregular shapes for the components of semiconductor processing chamber 102 and valve 200 are also possible. In the example of FIG. 2 , it is contemplated that movable central body 210 is primarily circular (excluding vanes 212), movable intermediate body 220 is primarily ring-shaped (excluding vanes 220), and the valve seat is also ring-shaped (omitted from FIG. 2 ). In general, it is contemplated that the outer diameter of movable central body 210 is approximately equal to the inner diameter of movable intermediate body 220, which in turn is approximately equal to the inner diameter of the valve seat. As discussed in more detail below, arrangements are contemplated in which the movable central body 210 overlaps the movable intermediate body (e.g., arrangements in which the movable central body has a diameter greater than the inner diameter of the movable intermediate body) and / or arrangements in which the movable intermediate body overlaps the valve seat. Additionally, arrangements are contemplated in which the movable central body 210 is nested within the movable intermediate body and / or arrangements in which the movable intermediate body is nested within the valve seat.

[0084] Semiconductor processing chamber having multi-stage poppet valve 3A is a side cross-sectional view and FIG. 3B is a cross-sectional perspective view of the multi-stage poppet valve 200 of FIG. 2 installed in the tool 100 of FIG.

[0085] The valve seat 240 may be formed by the floor 105 of the semiconductor processing chamber 102, as shown in Figures 3A and 3B. The floor 105 is highlighted by a dashed line in Figure 3A. If desired, the valve seat 240 may be formed by a component separate from the floor 105 of the semiconductor processing chamber 102.

[0086] The substrate support 120 may be held in place by a substrate support arm 122. As shown in FIG. 3B , the substrate support arm 122 may be aligned with the vanes 212 of the movable body 210 and / or the vanes 222 of the movable body 220, respectively. In particular, when viewed from a perspective parallel to the first axis 213, the substrate support arm may overlap the vanes on at least one side of the movable body. As shown in FIG. 3B , the substrate support arm 122 and at least one vane 212 of the movable body 210 and at least one vane 222 of the movable body 220 may be aligned along a second axis 250 that is parallel to the first axis 213. Aligning the substrate support arm 122 with the vanes 212 and 222 may help further improve conductance through the system by reducing the total cross-sectional area over which gas flow is restricted by the presence of physical structures. In some embodiments, the tool 100 may have two or more substrate support arms 122, and some or all of the substrate support arms 122 may be aligned similarly to the wings of the moveable body.

[0087] The multi-stage poppet valve 200 may include seals in some embodiments, as needed. For example, the valve 200 may include a first seal 214 attached to the movable central body 210 and a second seal 224 attached to the movable intermediate body 220. When the movable central body 210 is positioned proximate to the movable intermediate body 220, the first seal 214 may be in contact with both the movable intermediate body 220 and the movable central body 210. Similarly, when the movable intermediate body 220 is positioned proximate to the valve seat 240, the second seal 224 may be in contact with both the movable intermediate body 220 and the valve seat 240. The first seal 214 may provide an airtight seal between the movable intermediate body 220 and the movable central body 210 when the movable bodies are proximate and / or pressed against each other. The second seal 224 may provide an airtight seal between the movable intermediate body 220 and the valve seat 240 when the movable intermediate body 220 is adjacent to and / or pressed against the valve seat 240 .

[0088] 4 illustrates the interplay between the size of various moving bodies and their clearances to the surrounding walls 106 and floor 105 of a semiconductor processing chamber. As noted above, larger valves typically have greater conductance than smaller valves, unless the valve becomes so large that there is insufficient clearance from surrounding structures, in which case the effective conductance is limited or reduced. A multi-stage poppet valve 200 of the type disclosed herein is capable of achieving greater conductance within the confines of a semiconductor processing chamber compared to the potential conductance of a single-stage poppet valve.

[0089] 4, when multi-stage poppet valve 200 is in its fully open configuration, there are gas flow paths 402 and 404 through the valve. Flow path 404 passes between movable center body 210 and movable intermediate body 220, while flow path 402 passes between movable intermediate body 220 and valve seat 240. To increase the conductance of valve 200 in the fully open configuration, it may be desirable to increase the total cross-sectional area provided by flow paths 402 and 404.

[0090] The conductance of flow path 402 when movable intermediate 220 is in its fully open configuration is primarily determined by three dimensions: the outer radius of movable intermediate 220, the distance 406 between movable intermediate 220 and valve seat 240, and the distance 408 between movable intermediate 220 and wall 106 of semiconductor processing chamber 102 (assuming the valve is in its fully open configuration). Distance 406 may represent the gap between movable intermediate 220 and valve seat 240 when movable intermediate 220 is in its fully open position. Distance 408 may be measured perpendicular to first axis 213.

[0091] Similar to the conductance of flow path 402, the conductance of flow path 404 when the movable central body 210 is in its fully open configuration is primarily determined by three dimensions: the radius of the movable central body 210, the distance 410 between the movable central body 210 and the movable intermediate body 220, and the distance 414 between the movable central body 210 and the wall 106. Furthermore, it should be noted that both flow paths 402 and 404 must pass through a gap determined by distance 414 when both movable bodies 210 and 220 are in their fully open configurations. As a result, distance 414 should preferably be sized to account for both flow paths 402 and 404. Distance 412 may represent the gap between the movable central body 210 and the valve seat 240 when the movable central body 210 is in its fully open position. In contrast, distance 410 may represent the separation between the movable central body 210 and the movable intermediate body 220 when the valve 200 is in its fully open configuration. Distance 414 can be measured perpendicular to first axis 213 .

[0092] 4, the inventors have recognized that the overall conductance of valve 200 can be increased by adjusting the dimensions of various components of multi-stage poppet valve 200. In particular, the overall conductance of valve 200 can be increased by increasing the cross-sectional area of ​​flow channels 402 and 404 while respecting space constraints within a semiconductor processing chamber (e.g., avoiding excessively large travel distances, such as distances 406 and 412, which could cause one or more of the moveable bodies to impinge on components directly above, such as substrate support arm 122).

[0093] In some embodiments, it may be desirable for distance 408 to be approximately equal to distance 406. By way of example, distance 406 may be between 50% and 150% of distance 408, between 75% and 125% of distance 408, between 90% and 110% of distance 408, at least 75% of distance 408, at least 90% of distance 408, no more than 125% of distance 408, or no more than 110% of distance 408. Such an arrangement improves the potential conductance of flow path 402 by generally balancing two choke points along flow path 402 (the first between the moveable body and wall 106, and the second between the moveable body and the valve seat). All examples of distances provided herein, including distances 406 and 408, are intended to refer to average distances and, therefore, allow for variations around moveable intermediate body 220, within semiconductor processing chamber 102, and / or other related structures.

[0094] In some embodiments, it may be desirable for distance 412 to be approximately equal to distance 414. By way of example, distance 412 may be between 50% and 150% of distance 414, between 75% and 125% of distance 414, between 90% and 110% of distance 414, at least 75% of distance 414, at least 90% of distance 414, no more than 125% of distance 414, or no more than 110% of distance 414. Such an arrangement improves the potential conductance of flow channel 404 by approximately balancing two choke points along flow channel 404 (the first between the movable central body and wall 106, and the second between the movable central body and the movable intermediate body). It should be noted that while the first choke point of flow path 404 (between the movable central body 210 and the wall 106 of the semiconductor processing chamber 102) has a significantly larger cross-sectional area than the second choke point, the first choke point is also a choke point for the other flow path 402, and therefore its cross-sectional area is shared by both flow paths. Thus, despite its significantly larger cross-sectional area, the first choke point of flow path 404 remains relatively balanced with the second choke point. All examples of distances provided herein, including distances 412 and 414, are intended to refer to average distances and, therefore, allow for variations around the movable central body 210, within the semiconductor processing chamber 102, and / or other associated structures.

[0095] In various embodiments, the gap distance 408 represents the average gap between adjacent portions of the movable intermediate body 220 and the wall 106 of the semiconductor processing chamber 102; distance414 represents the average gap between adjacent portions of the movable central body 210 and the wall 106 of the semiconductor processing chamber 102. The average gap between two structures can refer to the average of all different gaps between the structures in all radial directions. As an example, consider a circle within a square, where the circle is as large as possible but is completely contained within the square. In such an example, the gap between the circle and the square varies from zero (where the circle touches the square) to a maximum non-zero value (measured along a line passing through two opposite corners of the square). The average gap is found by taking the average of all different gaps in all radial directions (each radial direction has equal weight). In the simple example of a first circle centered within a second circle, the average gap is simply the radius of the second circle minus the radius of the first circle.

[0096] In some embodiments, it may be desirable for the radial thickness 416 of the movable intermediate body 220 to be approximately equal to the distance 412 minus the distance 406. In other words, it may be desirable for the radial thickness 416 of the movable intermediate body 220 to be approximately equal to the distance 410. By way of example, the radial thickness 416 of the movable intermediate body 220 may be between 50% and 150% of the distance 412 minus the distance 406, between 75% and 125% of the distance 412 minus the distance 406, between 90% and 110% of the distance 412 minus the distance 406, at least 75% of the distance 412 minus the distance 406, at least 90% of the distance 412 minus the distance 406, no more than 125% of the distance 412 minus the distance 406, or no more than 110% of the distance 412 minus the distance 406. Such an arrangement improves the conductance of the multi-stage poppet valve 200.

[0097] In some embodiments, the movable central body 210 and / or the movable intermediate body 220 may be formed of a conductive material and may be electrically connected (e.g., shorted) to ground. Grounding the movable central body 210 and / or the movable intermediate body 220 may help to contain the plasma within the semiconductor processing chamber 102.

[0098] 4, valve seat 240 has a gas impermeable region 241 having a radial width 418, and a gas permeable region 242, sometimes referred to as a valve throat. In some embodiments, it may be desirable for radial width 418 of valve seat 240 to be approximately equal to distances 406 and 408. By way of example, radial width 418 of valve seat 240 may be between 50% and 150% of distance 406, between 75% and 125% of distance 406, between 90% and 110% of distance 406, at least 75% of distance 406, at least 90% of distance 406, no more than 125% of distance 406, or no more than 110% of distance 406. As additional examples, the radial width 418 of the valve seat 240 may be between 50% and 150% of the distance 408, between 75% and 125% of the distance 408, between 90% and 110% of the distance 408, at least 75% of the distance 408, at least 90% of the distance 408, no more than 125% of the distance 408, or no more than 110% of the distance 408. Such an arrangement improves the conductance of the multi-stage poppet valve 200. All example measurements provided herein, including the radial width 418, are intended to refer to an average distance unless otherwise specified.

[0099] In some embodiments, the distance 406 traveled by the movable intermediate body 220 relative to the valve seat 240 and the distance 410 traveled by the movable central body 210 relative to the movable intermediate body 220 may be approximately half of the average transverse cross-sectional dimension of the interior space of the semiconductor processing chamber 102. For a cylindrical semiconductor processing chamber 102, the average transverse cross-sectional dimension of the interior space is represented by the diameter of the chamber. For chambers of other shapes, including non-uniform shapes, the average transverse cross-sectional dimension of the interior space can be determined by averaging the transverse (horizontal) dimensions of the interior space in multiple cross-sectional planes coincident with a common longitudinal axis and at multiple different angles relative to one of the cross-sectional planes. As a specific example, the distance 406 may be between 35% and 65% of the average transverse cross-sectional dimension of the interior space of the semiconductor processing chamber 102. Similarly, the distance 408 may be between 35% and 65% of the average transverse cross-sectional dimension of the interior space of the semiconductor processing chamber 102.

[0100] In some embodiments, the distance 406 traveled by the movable intermediate body 220 relative to the valve seat 240 may be approximately equal to the distance 410 traveled by the movable central body 210 relative to the movable intermediate body 220. As a particular example, the distance 406 may be between 75% and 125% of the distance 410.

[0101] In some embodiments, it may be desirable to balance the various cross-sectional areas in flow paths 402 and 404. In particular, and when valve 200 is in its fully open configuration (as shown in FIG. 4 ), there is a first cross-sectional area between movable intermediate body 220 and wall 106 of semiconductor processing chamber 102, a second cross-sectional area between movable intermediate body 220 and valve seat 240, a third cross-sectional area between movable central body 210 and wall 106 of semiconductor processing chamber 102, and a fourth cross-sectional area between movable central body 210 and gas permeable region 223 of movable intermediate body 220. In various embodiments, the first cross-sectional area may be approximately equal to the second cross-sectional area. By way of example, the first cross-sectional area may be between 75% and 125% of the second cross-sectional area. In various embodiments, the third cross-sectional area may be approximately equal to the sum of the second and fourth cross-sectional areas. As an example, the third cross-sectional area may be between 75% and 125% of the sum of the second and fourth cross-sectional areas. In some embodiments, the cross-sectional area of ​​gas permeable region 223 of movable intermediate 220 may be approximately equal to the fourth cross-sectional area (e.g., between 75% and 125%). In some embodiments, the cross-sectional area of ​​gas permeable region 242 of valve seat 240 may be approximately equal to the third cross-sectional area (e.g., between 75% and 125%).

[0102] 4 embodiment may be operated in configurations between its fully closed and fully open configurations. Starting from the fully closed configuration, the movable central body 210 may be independently translated until it is spaced a distance 410 from the movable intermediate body 220. The movable central body 210 and the movable intermediate body 220 may then be translated together until the valve 200 is in its fully open configuration. Operating the valve 200 in such intermediate configurations may provide controlled modulation of the conductance of the valve 200, which may be useful for regulating the vacuum within a semiconductor processing chamber.

[0103] In various embodiments, the movable bodies of the multi-stage poppet valve 200 may move in different manners. For example, the movement of a first one of the movable bodies may be independent, semi-independent, or dependent on the movement of a second one of the movable bodies. The embodiment of FIG. 4 described above is an example of a semi-independent configuration, as the movable central body 210 moves independently between a fully open configuration and a partially open configuration, while the movable central body 210 and the movable intermediate body 220 move together between a partially open configuration and a fully open configuration. As another example of a semi-independent configuration, the movable central body 210 and the movable intermediate body 220 may move together between a fully closed configuration and a partially open configuration, while the movable central body 210 moves independently between a partially open configuration and a fully open configuration. As an example of a dependent configuration, the two movable bodies may be configured to move simultaneously but at different speeds. As a specific example of a dependent configuration, the movable central body 210 may be configured to move simultaneously with the movable intermediate body 220 but at twice the speed thereof, so that the movable bodies reach their fully open and fully closed positions substantially simultaneously. An example of an independent configuration is provided by FIG. 5, which is discussed in more detail below.

[0104] Multistage poppet valve with independent stage actuation FIG. 5 illustrates a multi-stage poppet valve 200 modified to have independent stages of actuation. As described above in connection with at least FIG. 2, the multi-stage poppet valve 200 may include an actuator 230 having a stepped shaft 231. When the valve transitions from a fully closed state to a fully open state, the steps in the shaft 231 allow movement of the shaft 231 to initially result in translation of only the movable central body 210, and then, after the movable central body 210 is in its spaced-apart relationship with the movable intermediate body 220, further movement of the shaft 231 results in translation of both the movable central body 210 and the movable intermediate body 220 together. In contrast to such embodiments, the embodiment of FIG. 5 utilizes one or more actuators 550, each driving an independent shaft 552 and 554. Shaft 552 is mechanically coupled to the movable intermediate body 220, while shaft 554 is mechanically coupled to the movable central body 210.

[0105] 5 may allow for finer control of the conductance of the multi-stage poppet valve 200. In particular, the arrangement of FIG. 5 allows the movable intermediate body 220 to translate partially or fully to its fully open position, while the movable central body 210 can translate independently to any position between its fully open position and a position proximate the movable intermediate body 220 (which may be its fully closed position, its fully open position, or a partially open position therebetween). By allowing for a greater variety of states of the multi-stage poppet valve 200, the actuator 550 with independent shafts 552 and 554 may allow for finer control of the conductance through the valve.

[0106] Multi-stage poppet valve with nested movable body In the example described above, when in a minimum flow conductance state, the movable bodies may be stacked on top of one another, with the gas-impermeable region of each body overlapping the boundary between the gas-permeable and gas-impermeable regions of the adjacent body or bodies (or valve seats). This arrangement may provide a good seal (e.g., a good face seal) between the body and the valve seat because there is no sliding contact between the bodies, and therefore surface-to-surface contact (or surface-to-seal contact, if seals are used) can be easily achieved with minimal potential particulate generation. However, in other embodiments, the movable body and valve seat of the multi-stage poppet valve 200 may be configured to nest together when in a fully or partially closed configuration. Example arrangements for such embodiments are illustrated in Figures 7A, 7B, and 7C.

[0107] As shown in FIG. 7A, the movable central body 210, the movable intermediate body 220, and the valve seat 240 may be nested together when in the fully closed position. In some embodiments, the movable intermediate body 220 remains nested in the valve seat 240 while the valve 200 is in its fully closed position, its first stage fully open position (e.g., with the movable central body fully lifted from the valve seat while the movable intermediate body remains in its closed position), or a position in between. FIG. 7B illustrates an arrangement of the valve 200 including a telescoping movable body of the type shown in FIG. 7A, but with the valve 200 in its fully open configuration. The telescoping movable body may facilitate a seal (e.g., one or more piston seals) between the movable body and the valve seat 240.

[0108] 7A and 7B, the nested components of valve 200 have vertically oriented sides (e.g., sides parallel to the axis of movement of the movable body). If desired, seals such as O-rings may be provided between the sides to provide an airtight seal between movable intermediate body 220 and valve seat 240 and / or between movable intermediate body 220 and movable central body 210.

[0109] 7A also illustrates that an actuator, such as actuator 230, may include one or more seals 700. Seal 700 may provide an airtight seal between the interior space of a semiconductor processing chamber and actuator 230, which may be disposed outside the interior space of the semiconductor processing chamber. As shown in FIGS. 7A and 7B, seal 700 is formed as a sliding seal. In other embodiments, seal 700 may be formed from a static seal and / or a non-sliding seal, such as a bellows, which may be formed of metal. In various embodiments, the internal components of actuator 230 may be outside a vacuum environment (e.g., atmospheric pressure).

[0110] 7A and 7B, the nested components of valve 200 may have sides with tapered alignment, which may facilitate a tapered seal. In particular, valve seat 240 may have sides that taper outward (toward the wall of the semiconductor processing chamber) along a first axis (e.g., the direction of movement of the movable body of valve 200), movable intermediate body 220 may have an outer edge that tapers outward along the first axis and an inner edge that tapers inward along the first axis, and movable central body 210 may have an outer edge that tapers outward along the first axis. Tapering movable bodies 210 and 220 and valve seat 240 may, for example, help form an airtight seal between movable bodies 210 and 220 and the valve seat. If desired, in the embodiment of FIG. 7C, a seal, such as an O-ring, may be provided to provide an airtight seal between the movable intermediate body 220 and the valve seat 240 and / or between the movable intermediate body 220 and the movable central body 210.

[0111] As the first step movable Medium Intermediate body Multistage poppet valve having In contrast to previous embodiments in which initial opening from a fully closed condition involves moving the movable central body away from the valve seat, a multi-stage poppet valve such as valve 200 may be configured such that the movable intermediate body is the first movable body to move during initial opening from a fully closed condition. This type of arrangement is illustrated in FIG. A ~6 C 8A-8D. In such an arrangement, if intermediate body 220 is separated from valve seat 240 and central body 210 by a gap, this may allow gas to flow around the periphery of intermediate body 220 and through the gas permeable region of intermediate body 220, thereby allowing valve 200 to reach a high flow state more quickly.

[0112] In some embodiments, where the movable intermediate body is the first movable body to move during initial opening from a fully closed state, the movable central body may need to pass through the plane of the movable intermediate body. In the embodiment of FIGS. 8A-8D, this is accomplished by dividing the movable intermediate body into two sections 820a and 820b, each coupled to an actuator 824 via a respective wing 822, as shown in FIG. 8A. The movable central body 810 can then be configured with wing 812 that can pass through the gap between the two movable intermediate body sections 820a and 820b. In some configurations, the valve 200 provides an airtight seal in its fully closed configuration, with one or more airtight seals between the surfaces of each of the two movable intermediate body sections 820a and 820b, the wing 812 of the movable central body 810, the movable central body, and the valve seat 240.

[0113] If desired, separate actuators may be provided to translate the movable central body 810 and the two movable intermediate body sections 820 a and 820 b. As an example, one or more actuators 814 may be coupled to the wings 812 of the movable central body 810, while one or more actuators 824 may be coupled to each of the two movable intermediate body sections 820 a and 820 b.

[0114] While FIG. 8A illustrates the movable intermediate body being divided into approximately equal halves, this is just one arrangement. If desired, the movable intermediate body may be divided unequally and / or into more than two portions. Two or more movable intermediate body portions 820a and 820b may translate together as a unit, or may translate independently if desired. Independent translation of two or more movable intermediate body portions 820a and 820b may allow for finer control of conductance and / or control of the spatial distribution of conductance, which may be useful for spatial tuning of plasma within a semiconductor processing chamber. A similar effect may be achieved with a single, C-shaped intermediate body, where the central body has a single wing that passes through the gap in the C-shape and is lifted by a single actuator.

[0115] 8B, 8C, and 8D illustrate various configurations of a valve 200 of the type defined in the embodiment of FIG. 8A (e.g., a valve in which a movable intermediate body is the first movable body to move during initial opening from a fully closed state). In FIG. 8A, the valve 200 of FIG. 8A is in its fully closed state. In FIG. 8C, the valve 200 of FIG. 8A is in a partially open state (e.g., movable intermediate body portions 820a and 820b are in their fully open positions). In FIG. 8D, the valve 200 of FIG. 8A is in a fully open state. FIGS. 8B-8D show cross sections 801 taken along dashed line 800 and 802 taken along dashed line 802 of FIG. 8A. 3 Here is an example:

[0116] In some embodiments, where the movable intermediate body 220 is the first movable body to move during initial opening from a fully closed state, the movable intermediate body 220 stacks on top of the movable central body 210 in both the fully open and fully closed configurations. This type of arrangement is illustrated in FIGS. 8E-8G. In FIG. 8E, the valve 200 is in a fully closed state. In FIG. 8F, the valve 200 is in a partially open state with the movable intermediate body 220 in a partially open position. In FIG. 8G, the valve 200 is in a fully open state. One advantage of the arrangement illustrated in FIGS. 8E-8G is that the actuator may be shared by the movable bodies, if desired. By way of example, as discussed in more detail elsewhere in this disclosure, the actuator may include a stepped shaft and / or the movable bodies may include a hanger that allows multiple movable bodies to be translated by one or more shared actuators.

[0117] Multi-stage poppet valve with hanger In contrast to previous embodiments in which the movable central body and the movable intermediate body are each coupled to an actuator, a multi-stage poppet valve such as valve 200 may be configured such that only the first movable body is coupled to one or more actuators, and one or more hangers, brackets, or other such structures couple the first movable body to the second movable body. This type of arrangement is illustrated in Figures 10A-10F.

[0118] 10A and 10B, the movable central body 210 may include a hanger 1002 that extends downward to lift the movable intermediate body 220 when the movable central body 210 is sufficiently lifted away from the valve seat 240. Additionally, the valve seat 240 or other suitable structure may include an extension 1004 that supports the movable intermediate body 220 when the movable intermediate body 220 is not being lifted by the hanger 1002. Alternatively, the hanger 1003 may be attached to and extend upward from the movable intermediate body 220, as shown in FIG. 10C. In such an alternative, the hanger 1003 hooks onto the movable central body 210 and lifts the movable intermediate body 220 when the movable central body 210 is sufficiently lifted above the valve seat 240.

[0119] As shown in FIGS. 10D and 10E , the movable intermediate body 220 may include a hanger 1006 that extends downward to lift the movable central body 210 when the movable intermediate body 220 is sufficiently lifted away from the valve seat 240. Thus, FIGS. 10D and 10E illustrate an arrangement in which the movable intermediate body 220 is the first body to move away from the valve seat when opening from the fully closed configuration. To prevent the movable central body 210 from falling, the valve seat or other suitable structure may include an extension 1008 that supports the movable central body 210 when it is not being lifted by the hanger 1006. FIGS. 10D and 10E illustrate the extension 1008 in dashed outline to indicate that the extension 1008 may be positioned radially offset from the hanger 1006 to prevent collisions. Alternatively, the hanger 1007 may be attached to the movable central body 210 and extend upward therefrom, as shown in FIG. 10F . In such an alternative, when the movable intermediate body 220 is raised sufficiently above the valve seat 240, the hanger hooks onto the movable intermediate body 220 and lifts the movable central body 210. Structures such as hanger 1004, hanger 1006, hanger 1007, and extension 1008 may be disposed at multiple radial positions around the circumference of the multi-stage poppet valve 200. Such structures may be evenly or unevenly distributed around the circumference of the multi-stage poppet valve 200. In general, it may be desirable to provide such structures in sufficient number and with sufficient spacing between the structures to provide stable support for the supported structure(s).

[0120] Additional high conductance valves In some embodiments, manufacturing tool 100 may include a high conductance valve as valve 143 of Figure 1 other than multi-stage poppet valve 200. Examples of such high conductance valves are illustrated in Figures 9A-9C.

[0121] As shown in FIG. 9A , a butterfly vent may function as the high conductance valve 143 of FIG. 1 . The butterfly vent may include one or more first bodies 902 having gas permeable and gas impermeable regions and one or more second bodies 904 having gas permeable and gas impermeable regions. In some embodiments, the first body 902 may be movable, and the second body 904 may be stationary. The gas permeable regions of the one or more second bodies 904 may collectively be referred to as the valve throat. Transitioning the butterfly vent between its fully open and fully closed positions (and any intermediate positions) may include rotating the first body 902 about a central axis. As shown in image 906, when the butterfly vent is in the fully closed position, the gas impermeable regions of the first body 902 may block the gas permeable regions of the second body 904. As shown in image 908, when the butterfly vent is in a partially open position, the gas impermeable region of the first body 902 may partially block the gas permeable region between the second body 904 and may partially overlap (e.g., be recessed below, above, or into) the gas impermeable region of the second body 904 when viewed along the central axis. As shown in image 910, when the butterfly vent is in a fully open position, the gas impermeable region of the first body 902 may be substantially or completely aligned with the gas impermeable region of the second body 904, keeping the gas permeable regions of both the first body 902 and the second body 902 aligned, thus providing a maximum conductance configuration. If desired, the second body 904 may also be configured to rotate about the same axis as the first body 902. In at least some embodiments, the first body 902 and the second body 904 are configured to be transitionable relative to one another between at least first and second configurations through rotation of one or both of the first and second bodies about an axis of rotation, wherein in the first configuration, the gas permeable region of the first body 902 has maximum overlap with the gas permeable region of the second body 904 when viewed along the axis of rotation (and thus the valve is in a maximum conductance state).In the second configuration, the gas permeable regions of the first body 902 are in full overlap with the gas impermeable regions of the second body 904, and the gas permeable regions of the second body 904 are in full overlap with the gas impermeable regions of the first body 902 (thus the valve is in a minimum conductance state).

[0122] If desired, butterfly events may include two or more layers of movable bodies to further improve the potential maximum conductance. A butterfly event with a single layer of movable bodies is only about 50% gas permeable when fully opened, as shown in FIG. 9A. A butterfly event with two layers of movable bodies, where both the first and second layers are aligned with one or more fixed bodies, is capable of about 67% gas permeability when fully opened. A butterfly event with three layers of movable bodies is capable of about 75% gas permeability when fully opened. Generally, such butterfly events are Vent The maximum conductance of is approximately equal to the number of movable layers divided by the number of movable layers plus 1 (where 1 corresponds to the fixed bodies with which the movable layers are aligned in the fully open configuration).

[0123] As shown in FIG. 9B, the butterfly valve may function as the high conductance valve 143 in FIG. 1. The butterfly valve may include a first body 928 and a second body 926. In some embodiments, the first body 928 may be movable and the second body 926 may be stationary. In some other embodiments, both the first body 928 and the second body 926 may be movable. In some embodiments, the second body 926 may be formed by the wall 106 of the semiconductor processing chamber 102. Transitioning the butterfly valve between its fully open and fully closed positions (and any intermediate positions) may include rotating the first body 928 about an axis. As shown in image 920, the first body 928 may block a gas permeable region between the first body 928 and the second body 926 when the butterfly valve is in the fully closed position. The gas permeable region of the second body 926 may also be referred to as a valve throat. As shown in image 922, when the butterfly valve is in a partially open position, the first body 928 may only partially block the gas permeable region between the second body 926. As shown in image 924, when the butterfly valve is in a fully open position, the first body 928 is substantially aligned with the expected direction of gas flow and the gas permeable region between the second body 926 may be substantially open to gas flow, resulting in a maximum conductance state for the butterfly valve.

[0124] As shown in FIG. 9C , the iris valve may function as the high conductance valve 143 of FIG. 1 . The iris valve may include a plurality of first bodies 938, sometimes referred to herein as blades, and a second body 936. In some embodiments, the first bodies 938 may be movable and the second bodies 936 may be stationary. In some embodiments, the second bodies 936 may be at least partially formed by the wall 106 of the semiconductor processing chamber 102. Transitioning the iris valve between its fully open and fully closed positions (and any intermediate positions) may include retracting the first bodies 928 into a recessed position below, above, or within the second bodies 936. As shown in image 930, the first bodies 938 may block a gas permeable region between the second bodies 936 when the iris valve is in the fully closed position. The gas permeable region of the second bodies 936 may also be referred to as a valve throat. In the fully closed position, the iris valve may provide an airtight seal. As shown in image 932, when the iris valve is in a partially open position, the first body 938 may only partially block the gas permeable region between the second body 936 and may be partially recessed below, above, or within the second body 936. As shown in image 934, when the iris valve is in a fully open position, the first body 938 may be substantially or completely recessed below, above, or within the second body 936, thereby substantially opening the gas permeable region between the second body 936 to gas flow, resulting in a maximum conductance state of the iris valve.

[0125] In some embodiments, the butterfly valve of FIG. 9A, the butterfly valve of FIG. 9B, and the iris valve of FIG. 9C may include a valve throat having an average horizontal cross-sectional width that is between 85% and 100% of the average horizontal cross-sectional width of the adjacent portion of the semiconductor processing chamber. Similarly, one or more first bodies (e.g., movable bodies) of the valves of FIGS. 9A-9C may have an average horizontal cross-sectional width that is between 85% and 100% of the average horizontal cross-sectional width of the adjacent portion of the semiconductor processing chamber. A structure such as a semiconductor processing chamber or valve may have a width that varies depending on the radial direction. The average horizontal cross-sectional width of such a structure may refer to the average of all different widths of the structure in all radial directions. As an example, an elliptical-shaped structure may have a minimum width (measured along the minor axis of orbit and equal to twice the magnitude of the minor axis of orbit), a maximum width (measured along the major axis of orbit and equal to twice the magnitude of the major axis of orbit), and multiple additional widths (measured along radial orientations that are not parallel to either the minor axis or the major axis) between the maximum and minimum widths. In the example of an ellipse, the average horizontal cross-sectional width is determined by taking the average of the minimum width, the maximum width, and any additional widths. In the simple example of a circle, the average horizontal cross-sectional width is just the diameter of the circle. As a specific example, in an embodiment in which the semiconductor processing chamber is cylindrical and has a radius R, the valve throat and corresponding first body 902 of the butterfly valve of FIG. 9A may have a cross-sectional width that is between 85% and 100% of R, the valve throat and corresponding first body 928 of the butterfly valve of FIG. 9B may have a cross-sectional width that is between 85% and 100% of R, and the valve throat and corresponding first body 938 of the iris valve of FIG. 9C (at least in their fully closed positions) may have a cross-sectional width that is between 85% and 100% of R.

[0126] Control Module FIG. 11 illustrates a control module 500 for controlling the system described above. In one embodiment, the controller 124 of FIG. 1 may include some of the example components. For example, the control module 500 may include a processor, a memory, and one or more interfaces. The control module 500 may be employed to control devices within the system based in part on sensed values. By way of example only, the control module 500 may control one or more of a valve 502 (which may include a high-conductance valve, such as valve 200), a filter heater 504, a pump 506, and other devices 508 based on the sensed values ​​and other control parameters. The control module 500 receives sensed values ​​from, by way of example only, a pressure manometer 510, a flow meter 512, a temperature sensor 514, and / or other sensors 516. The control module 500 may also be employed to control process conditions during precursor delivery and film deposition and / or during etching processes. The control module 500 typically includes one or more memory devices and one or more processors.

[0127] The control module 500 may control the precursor delivery system and the activity of the deposition and / or etching equipment. The control module 500 executes a computer program including a set of instructions for controlling process timing, delivery system temperature, pressure differential across a filter, valve position, gas mixture, chamber pressure, chamber temperature, wafer temperature, RF power levels, wafer chuck or pedestal position, and other parameters of a particular process. The control module 500 may also monitor pressure differentials and automatically switch vapor precursor delivery from one or more paths to one or more other paths. Other computer programs stored in a memory device associated with the control module 500 may be employed in some embodiments.

[0128] Typically, there is a user interface associated with the control module 500. The user interface may include a display 518 (e.g., a display screen and / or a graphical software display of equipment and / or process conditions) and user input devices 520 such as a pointing device, keyboard, touch screen, microphone, etc.

[0129] Computer programs for controlling precursor delivery, deposition, and other processes in a process sequence can be written in any conventional computer-readable programming language, such as assembly language, C, C++, Pascal, Fortran, etc. The compiled object code or script is executed by a processor to perform the tasks specified in the program.

[0130] The control module parameters relate to process conditions such as, for example, filter pressure differential, process gas composition and flow rate, temperature, pressure, plasma conditions such as RF power level and low frequency RF frequency, cooling gas pressure, and chamber wall temperature.

[0131] The system software can be designed or configured in many different ways. For example, various chamber component subroutines or control objects may be written to control the operation of the chamber components necessary to perform a process. Examples of programs or sections of programs for this purpose include substrate positioning code, process gas control code, pressure control code, heater control code, and plasma control code.

[0132] The substrate positioning program may include program code for controlling chamber components used to load the substrate onto the pedestal or chuck and control spacing between the substrate and other parts of the chamber, such as the gas inlet and / or target. The process gas control program may include code for controlling gas composition and flow rates, and optionally code for flowing gas into the chamber before deposition to stabilize the pressure in the chamber. The filter monitoring program may include code for comparing measured differences with predetermined values ​​and / or code for switching paths. The pressure control program may include code for controlling the pressure in the chamber, for example, by adjusting a throttle valve in the chamber's exhaust system. The heater control program may include code for controlling current to a heating unit for heating components of the precursor delivery system, the substrate, and / or other parts of the system. Alternatively, the heater control program may control the delivery of a heat transfer gas, such as helium, to the wafer chuck.

[0133] Examples of sensors that may be monitored during processing include, but are not limited to, mass flow control modules, pressure sensors such as pressure manometers 510, and thermocouples (e.g., temperature sensors 514) located in the delivery system, pedestal, or chuck. Appropriately programmed feedback and control algorithms may be used in conjunction with data from these sensors to maintain desired process conditions. The foregoing is a description of the implementation of embodiments of the present invention in a single chamber or multi-chamber semiconductor processing tool.

[0134] In some embodiments, the plasma may be monitored in situ by one or more plasma monitors. In one scenario, plasma power may be monitored by one or more voltage and current sensors (e.g., VI probes). In another scenario, plasma density and / or process gas concentrations may be measured by one or more optical emission spectroscopy (OES) sensors. In some embodiments, one or more plasma parameters may be programmatically adjusted based on measurements from such in situ plasma monitors. For example, OES sensors may be used in a feedback loop to provide programmatic control of plasma power and / or vacuum valve status (and thus conductance). It will be understood that in some embodiments, other monitors may be used to monitor the plasma and other process characteristics. Such monitors may include, but are not limited to, infrared (IR) monitors, acoustic monitors, and pressure transducers.

[0135] Any suitable chamber may be used to practice the disclosed embodiments. Examples of deposition equipment include, but are not limited to, equipment from the ALTUS® product family, VECTOR® product family, and / or SPEED® product family, each available from Lam Research Corp. of Fremont, California, or any of a variety of other commercially available processing systems. Two or more stations may perform the same function. Similarly, two or more stations may perform different functions. Each station can be designed / configured to perform a specific function / method as needed.

[0136] The system control logic may be configured in any suitable manner. In general, logic can be designed or configured in hardware and / or software. Instructions for controlling the drive circuitry may be hard-coded or provided as software. The instructions may be provided by "programming." Such programming is understood to include any form of logic, including hard-coded logic in digital signal processors, application-specific integrated circuits, and other devices that implement specific algorithms as hardware. Programming is also understood to include software or firmware instructions that may be executed on a general-purpose processor. The system control software may be coded in any suitable computer-readable programming language.

[0137] The computer program code for controlling the processes in the process sequence can be written in any conventional computer-readable programming language, such as assembly language, C, C++, Pascal, Fortran, etc. The compiled object code or script is executed by a processor to perform the tasks specified in the program. Also, as shown, the program code may be hard-coded.

[0138] The controller parameters relate to process conditions such as process gas composition and flow rates, temperature, pressure, cooling gas pressure, substrate temperature, and chamber wall temperature. These parameters may be provided to a user in the form of a recipe and entered using a user interface. Signals for monitoring the process may be provided by analog and / or digital input connections of the system controller. Signals for controlling the process are output by analog and digital output connections of the deposition tool.

[0139] The system software may be designed or configured in many different ways. For example, various chamber component subroutines or control objects may be written to control the operation of the chamber components necessary to perform a deposition process (and possibly other processes) in accordance with the disclosed embodiments. Examples of programs or sections of programs for this purpose include substrate positioning code, process gas control code, pressure control code, and heater control code.

[0140] In some embodiments, the controller is part of a system, which may be part of the examples described above. Such systems may include semiconductor processing equipment, including one or more processing tools, one or more chambers, one or more processing platforms, and / or specific processing components (such as a wafer pedestal, gas flow system, etc.). These systems may be integrated with electronics for controlling their operation before, during, and after processing of semiconductor wafers or substrates. The electronics, sometimes referred to as a "controller," may control various components or subparts of one or more systems. Depending on the processing requirements and / or type of system, the controller may be programmed to control any of the processes disclosed herein, including delivery of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings in some systems, RF matching circuit settings, frequency settings, flow rate settings, liquid delivery settings, position and motion settings, wafer loading and unloading into and out of the tool, and wafer loading and unloading into and out of other transport tools and / or load locks connected or interfacing with the particular system.

[0141] Broadly speaking, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. Integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application-specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files) that define operational parameters for performing a particular process on or for a semiconductor wafer or for a system. The operational parameters, in some embodiments, may be part of a recipe defined by a process engineer to accomplish one or more processing steps during the manufacture of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0142] The tool 100 of FIG. 1 may include a system controller 124. The system controller 124 (which may include one or more physical or logical controllers) controls some or all of the operation of the tool 100. The system controller 124 may include one or more memory devices and one or more processors. The processor may include a central processing unit (CPU) or computer, analog and / or digital input / output connections, stepper motor control boards, and other similar components. Instructions for implementing appropriate control operations are executed on the processor. These instructions may be stored in a memory device associated with the system controller 124 or provided over a network. In certain implementations, the system controller 124 executes system control software.

[0143] The system control software may include instructions for controlling the timing and / or extent of application of any one or more of the following chamber operating conditions: gas mixture and / or composition, chamber pressure, state of valve 143, operating state of pump 144, operating state of pump 145, chamber temperature, wafer / wafer support temperature, bias applied to the substrate (which may be zero in various embodiments), frequency and power applied to coils or other plasma-generating components, substrate position, substrate movement speed, and other parameters of the particular process being performed by the tool. The system control software may further control heating, purging, and cleaning operations via valve 143 and vacuum pump 144. The system control software may be configured in any suitable manner. For example, various process tool component subroutines or control objects may be written to control the operation of process tool components necessary to perform various process tool processes. The system control software may be coded in any suitable computer-readable programming language.

[0144] In some embodiments, the system control software includes input / output control (IOC) sequencing instructions for controlling the various parameters described above. For example, each stage of a semiconductor manufacturing process may include one or more instructions for execution by the system controller 124. Instructions for setting process conditions for a stage may be included in a corresponding recipe stage, for example. In some implementations, recipe stages may be sequentially arranged such that steps in a doping process are performed in a certain order for that process stage. For example, a recipe may be configured to perform etching operations and include one or more cycles of an atomic layer deposition (ALD) process performed between each of the etching operations. The recipe may be configured to perform purge and / or clean operations between the etching operations and one or more cycles of the ALD process.

[0145] In some embodiments, other computer software and / or programs may be employed. Examples of programs or sections of programs for this purpose include a substrate positioning program, a process gas composition control program, a pressure control program, a heater control program, and an RF power supply control program.

[0146] In some cases, the system controller 124 controls gas concentrations, substrate movement, and / or power supplied to the coil 110 and / or substrate support 120. The system controller 124 may control gas concentrations, for example, by opening and closing associated valves to generate one or more inlet gas flows that provide the required reactant(s) at appropriate concentrations. The system controller 124 may also control gas concentrations, for example, by adjusting the state of valve 143 (between open, closed, and intermediate positions) and controlling pumps 144 and 145. Substrate movement may be controlled, for example, by instructing a substrate positioning system to move as desired. The power supplied to the coil 110 and / or substrate support 120 may be controlled to provide specific RF power levels.

[0147] The system controller 124 may control these and other aspects based on sensor outputs (e.g., when power, potential, pressure, gas levels, etc. reach certain thresholds), timing of actions (e.g., opening valves, purging, etc. at certain times in the process), or commands received from a user.

[0148] In some implementations, the system controller 124 is part of a system, which may be part of the examples described above. Such a system may include semiconductor processing equipment, including one or more processing tools, one or more chambers, one or more processing platforms, and / or specific processing components (e.g., wafer pedestals, gas flow systems, etc.). These systems may be integrated with electronics for controlling their operation before, during, and after processing of semiconductor wafers or substrates. The electronics, sometimes referred to as a "controller," may control various components or sub-parts of one or more systems. The system controller 124 may control the plasma chamber, depending on the processing requirements and / or the type of system. 104 The disclosed process includes delivery of etching gases and deposition precursors into the plasma chamber 104, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, valve settings, power settings, RF generator settings, RF matching circuit settings, frequency settings, flow rate settings, liquid delivery settings, position and motion settings, loading and unloading substrates into the tool, and purging gases and by-products from the plasma chamber 104. S It may be programmed to control either one.

[0149] Broadly speaking, the system controller 124 may be defined as electronic equipment having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. The integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application-specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute the program instructions (e.g., software). The program instructions may be instructions communicated to the system controller 124 in the form of various individual settings (or program files) that define operational parameters for performing a particular process on or for a semiconductor substrate or for a system. The operational parameters, in some embodiments, may be part of a recipe defined by a process engineer to accomplish one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or die of the substrate.

[0150] In some embodiments, the system controller 124 may be part of or connected to a computer that is integrated into the system, connected to the system, otherwise networked to the system, or a combination thereof. For example, the system controller 124 may be all or part of a “cloud,” i.e., fab host computer system, enabling remote access to substrate processing. The computer may enable remote access to the system to monitor the current progress of a manufacturing operation, examine the history of past manufacturing operations, examine trends or performance criteria from multiple manufacturing operations, modify parameters of a current process, configure processing steps to track a current process, or initiate a new process. In some examples, a remote computer (e.g., a server) can provide process recipes to the system over a network, which may include a local network or the Internet. The remote computer may include a user interface that allows entry or programming of parameters and / or settings, which are then communicated from the remote computer to the system. In some examples, the system controller 124 receives instructions in the form of data specifying parameters for each of the processing steps to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tool that the system controller 124 is configured to interface with or control. Thus, as described above, the system controller 124 may be distributed, such as by including one or more individual controllers networked together and operating toward a common purpose, such as the processes and controls described herein. One example of a distributed system controller 124 for such purposes is one or more integrated circuits on the chamber that are located remotely (e.g., at the platform level or as part of a remote computer) and communicate with one or more integrated circuits that cooperatively control the processes in the chamber.

[0151] As described above, depending on the process step or steps being performed by the tool, the system controller 124 may communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools located throughout the factory, a main computer, another system controller 124, or tools used to transport materials to and from tool locations and / or load ports of substrates within a semiconductor fabrication factory.

[0152] Plasma Power Supply 10 7 The plasma power supply 100 and wafer bias voltage power supply 116 may be configured to operate at a particular radio frequency, such as, for example, 13.56 MHz, 27 MHz, 2 MHz, 60 MHz, 100 kHz, 2.54 GHz, or a combination thereof. 7 The wafer bias voltage power supply 116 may be appropriately sized to provide a range of power to achieve desired process performance. Additionally, the TCP coil 110 and / or the substrate support 120 may include two or more sub-coils or sub-electrodes, which may be powered by a single power supply or by multiple power supplies.

[0153] conclusion For purposes of this disclosure, the term "fluidically connected" is used in reference to spaces, plenums, openings, holes, etc. that may be coupled to one another to form a fluid connection, similar to the way the term "electrically connected" is used in reference to components that are coupled together to form an electrical connection. The term "fluidly disposed," when used, may refer to a component, space, plenum, or hole that is in fluid connection with at least two other components, spaces, plenums, or holes, such that fluid flowing from one of those other components, spaces, plenums, or holes to another or another of those components, spaces, plenums, or holes first flows through the "fluidly disposed" component before reaching the other or another of those components, spaces, plenums, or holes. For example, if a pump is fluidly disposed between a reservoir and an outlet, fluid flowing from the reservoir to the outlet will first flow through the pump before reaching the outlet.

[0154] As used herein, phrases such as "for each <item> of one or more <items>," "for each <item> of one or more <items>," and the like, should be understood to encompass both single-item groups and multiple-item groups; i.e., the phrase "for each..." is used in the sense used in programming languages ​​to refer to each item of any collection of items. For example, if the collection of items being referenced is a single item, "each" refers only to that single item (even though dictionary definitions of "each" frequently define the term to refer to "every one of two or more") and does not imply that there must be at least two of those items. Similarly, the terms "set" or "subset" should not, by themselves, be considered to necessarily encompass multiple items; it is understood that a set or subset can include only one member or multiple members (unless the context dictates otherwise).

[0155] Terms such as "about," "approximately," "substantially," "nominal," and the like, when used in reference to a quantity or similar quantifiable characteristic, unless otherwise indicated, are understood to include values ​​within ±10% of the specified value or relationship (as well as the actual value or relationship specified).

[0156] The use of sequence indicators in this disclosure and claims, e.g., (a), (b), (c), etc., should be understood as not conveying any particular order or sequence unless such order or sequence is explicitly indicated. For example, where there are three steps labeled (i), (ii), and (iii), it is understood that these steps may be performed in any order (or simultaneously, unless specifically prohibited) unless otherwise indicated. For example, if step (ii) involves manipulating an element produced in step (i), step (ii) may be considered to occur at some point after step (i). Similarly, if step (i) involves manipulating an element produced in step (ii), it is understood that the reverse is true. It is also understood that the use of the sequence indicator "first" herein, e.g., "first item," should not be read as suggesting, either implicitly or inherently, that a "second" instance, e.g., "second item," is necessarily present.

[0157] In the foregoing description, numerous specific details are set forth to provide a thorough understanding of the presented embodiments. The disclosed embodiments may be practiced without some or all of these specific details. In other instances, well-known process operations have not been described in detail so as not to unnecessarily obscure the disclosed embodiments. While the disclosed embodiments will be described in conjunction with specific embodiments, it will be understood that they are not intended to be limited to the disclosed embodiments.

[0158] In this disclosure and claims, "and / or" is intended to mean "at least one of." As an example, any disclosure or claim herein that describes a structure as having aspect A, aspect B, and / or aspect C is intended to indicate that the structure has at least one of aspect A, aspect B, and aspect C.

[0159] Although the foregoing embodiments have been described in some detail for purposes of clarity of understanding, it will be apparent that certain changes and modifications may be practiced within the scope of the appended claims. It should be noted that there are many alternative ways of implementing the processes, systems, and apparatus of the present embodiments. Accordingly, the present embodiments are to be considered as illustrative and not restrictive, and the present embodiments are not to be limited to the details given herein.

Claims

1. 1. An apparatus for semiconductor processing comprising a multi-stage poppet valve, the multi-stage poppet valve comprising: a valve seat including a gas permeable region; (i) a movable central body including a gas-impermeable region; and (ii) two or more movable bodies including at least one movable intermediate body, each movable intermediate body including a gas-impermeable region and a gas-permeable region, the gas-impermeable region of each movable intermediate body surrounding the gas-permeable region of that movable intermediate body; each of the movable bodies is translatable relative to the valve seat along a first axis, the movable bodies being transitionable between at least a first configuration and a second configuration; the movable body is positioned adjacent the valve seat so as to provide a first amount of flow restriction in the first configuration; the movable bodies are spaced apart from one another and from the valve seat along the first axis such that, in the second configuration, first gaps between at least two of the movable bodies in the first set of movable bodies are visible along the first axis, and corresponding second gaps between each of the movable bodies in the first set of movable bodies and the valve seat are visible along the first axis, so as to provide a second amount of flow restriction that is less than the first amount of flow restriction. Device.

2. 2. The device of claim 1, wherein the movable body is further transitionable between successive additional configurations between the first configuration and the second configuration, and as the movable body transitions from the first configuration through the successive additional configurations to the second configuration, the movable body provides a variable amount of flow restriction that decreases from the first amount of flow restriction to the second amount of flow restriction.

3. 10. The apparatus of claim 1, further comprising at least one actuator configured to translate the movable body; Each of the movable bodies includes a body; each of the movable bodies includes at least one wing extending from the body and mechanically coupled to a respective portion of the actuator; Device.

4. 10. The apparatus of claim 1, further comprising at least one actuator configured to translate the movable body; At least one of the movable bodies includes a body; At least one of the movable bodies includes at least one wing extending from the body and mechanically coupled to a portion of the actuator; and at least one of the movable bodies includes at least one bracket extending from the body and mechanically engaging another of the movable bodies for a small amount of partial translation of the movable body between the first configuration and the second configuration; Device.

5. 10. The apparatus of claim 1, a semiconductor processing chamber having walls defining an interior space; a process gas delivery system configured to introduce one or more process gases into the interior volume of the semiconductor processing chamber; a vacuum foreline in fluid communication with the interior volume of the semiconductor processing chamber; Furthermore, the multi-stage poppet valve is fluidly disposed between the vacuum foreline and the process gas delivery system. Device.

6. 6. The apparatus of claim 5, at least one actuator configured to translate the moveable body; a substrate support; a substrate support arm configured to hold the substrate support within the semiconductor processing chamber; Furthermore, the substrate support arm mechanically connects a wall of the semiconductor processing chamber to the substrate support; Each of the movable bodies includes a main body and at least one wing extending from the main body; the wing of each movable body mechanically connects the movable body to a portion of the actuator; At least one wing of the substrate support arm and each movable body is aligned along a second axis parallel to the first axis. Device.

7. 6. The apparatus of claim 5, wherein when the multi-stage poppet valve is in the second configuration, an average gap X exists between adjacent portions of the movable intermediate body and the wall of the semiconductor processing chamber, an average gap Y exists between adjacent portions of the movable central body and the wall of the semiconductor processing chamber, the movable intermediate body is configured to translate along the first axis a distance of at least 75% of X when transitioning from the first configuration to the second configuration, and the movable central body is configured to translate along the first axis a distance of at least 75% of Y when transitioning from the first configuration to the second configuration.

8. 8. The apparatus of claim 7, wherein the distance the movable intermediate body is configured to translate along the first axis when transitioning from the first configuration to the second configuration is less than or equal to 125% of X, and the distance the movable central body is configured to translate along the first axis when transitioning from the first configuration to the second configuration is less than or equal to 125% of Y.

9. 2. The device of claim 1, wherein the multi-stage poppet valve comprises: a first actuator or set of first actuators at least partially independent of the movable intermediate body and configured to translate the movable central body along the first axis between the first configuration and the second configuration; a second actuator or set of second actuators at least partially independent of the movable central body and configured to translate the movable intermediate body along the first axis between the first configuration and the second configuration; and The apparatus further comprises:

10. 2. The device of claim 1, wherein the movable body is further movable to a third configuration to provide a flow restriction of a third amount, the flow restriction being between the first amount and the second amount, wherein in the third configuration, the movable central body is disposed at a position spaced along the first axis relative to the valve seat, and the movable intermediate body is disposed proximate to the valve seat, and the multi-stage poppet valve comprises: at least one actuator; at least one shaft that translates along the first axis upon operation of the at least one actuator, the at least one shaft having (i) a first portion that engages with the movable central body and (ii) a second portion that engages with the movable intermediate body; The apparatus further comprises:

11. 2. The device of claim 1, wherein the movable body is further movable to a third configuration to provide a flow restriction of a third amount, the flow restriction being between the first amount and the second amount, wherein in the third configuration, the movable central body is disposed at a spaced position along the first axis relative to the valve seat and the movable intermediate body is disposed proximate to the valve seat, and the multi-stage poppet valve comprises: at least one actuator; at least one stepped shaft coupled to both the movable central body and the movable intermediate body; Furthermore, a first portion of the stepped shaft having a first diameter, a second portion of the stepped shaft having a second diameter greater than the first diameter, the first portion of the stepped shaft coupled to the movable central body and passing through a portion of the movable intermediate body, the second portion of the stepped shaft configured to press against the portion of the movable intermediate body to translate the movable intermediate body along the first axis; Device.

12. 2. The device of claim 1, wherein the multi-stage poppet valve further includes at least a first seal and a second seal, the first seal contacting both the valve seat and the movable intermediate body at least when in the first configuration, and the second seal contacting both the movable intermediate body and the movable central body at least when in the first configuration.

13. 2. The device of claim 1, wherein in the first configuration, the movable intermediate body is nested within the gas permeable region of the valve seat and the movable central body is nested within the gas permeable region of the movable intermediate body such that the valve seat, the movable intermediate body, and the movable central body all overlap one another when viewed along an axis perpendicular to the first axis.

14. 10. The apparatus of claim 1, wherein in the first configuration, the movable body and the valve seat are arranged in a stacked arrangement.

15. 10. The apparatus of claim 1, wherein the second configuration provides a minimum flow restriction state for the multi-stage poppet valve.

16. 10. The apparatus of claim 1, wherein the valve seat and two or more movable bodies are configured such that in the first configuration, the multi-stage poppet valve is generally gas impermeable.

17. 2. The device of claim 1, wherein the first configuration is a maximum flow restriction state, and the valve seat and two or more movable bodies are configured such that in the maximum flow restriction state, at least one of the movable bodies does not make sealing contact with an item selected from the group consisting of the valve seat and another of the movable bodies.

18. 2. The device of claim 1, wherein the gas impermeable regions of the two or more movable bodies collectively overlap all of the gas permeable regions of the valve seat when viewed along the first axis.

19. 2. The device of claim 1, wherein the movable central body and the movable intermediate body are further movable to a third configuration, wherein in the third configuration, the movable intermediate body is disposed in a spaced-apart relationship from the valve seat and the movable central body is disposed proximate to the movable intermediate body, and the movable central body is translatable along the first axis independently of the movable intermediate body during at least a portion of a transition between the second configuration and the third configuration.

20. 2. The device of claim 1, wherein the movable central body and the movable intermediate body are further movable to a third configuration, wherein in the third configuration, the movable intermediate body is positioned proximate to the valve seat and the movable central body is positioned in a spaced relationship from the valve seat and the movable intermediate body, the movable central body is translatable along the first axis independently of the movable intermediate body during at least a portion of a transition between the first configuration and the third configuration, and the movable central body and the movable intermediate body are translatable together along the first axis during at least a portion of a transition between the second configuration and the third configuration.

21. 10. The apparatus of claim 1, wherein the movable central body is disk-shaped, the movable intermediate body is ring-shaped, and the gas permeable region of the valve seat is disk-shaped.

22. 2. The device of claim 1, wherein the first configuration provides a maximum flow restriction state and the second configuration provides a minimum flow restriction state, the movable central body moves a distance X along the first axis when moving from the first configuration to the second configuration, the movable intermediate body moves a distance Y along the first axis when moving from the first configuration to the second configuration, and the movable intermediate body has a ring shape with an average radial width A, where A is up to 125% of X minus Y.

23. 10. The device of claim 1, wherein the movable central body moves a distance X when moving from the first configuration to the second configuration, and the valve seat has a gas impermeable region having an average radial width A, where A is at most 125% of X.

24. 2. The apparatus of claim 1, wherein the first configuration is a maximum flow restriction state, and the multi-stage poppet valve is gas permeable even in the maximum flow restriction state.

25. 25. The device of claim 24, wherein one or more gaps exist between each pair of the valve seat, the movable intermediate body, and the movable center body when the multi-stage poppet valve is in the maximum flow restriction state.

26. 10. The apparatus of claim 1, a semiconductor processing chamber at least partially enclosing a space having an average lateral cross-sectional dimension; a process gas delivery system configured to introduce one or more process gases into the semiconductor processing chamber; a vacuum foreline in fluid communication with the semiconductor processing chamber; Furthermore, the multi-stage poppet valve is fluidly disposed between the process gas delivery system and the vacuum foreline; the movable intermediate body is configured to translate a first distance between the first configuration in which the movable intermediate body is proximate to the valve seat and the second configuration in which the movable intermediate body is positioned a first distance away from the valve seat; the movable intermediate body has an average transverse cross-sectional dimension; the movable central body is configured to translate a second distance relative to the movable intermediate body between the first configuration in which the movable central body is proximate to the gas permeable region of the movable intermediate body and the second configuration in which the movable central body is spaced a second distance from the valve seat and spaced a second distance from the movable intermediate body by the second distance minus the first distance, the movable central body has an average transverse cross-sectional dimension; the first distance is between 35% and 65% of the average lateral cross-sectional dimension of the volume of the semiconductor processing chamber minus the average lateral cross-sectional dimension of the movable intermediate body; the second distance is between 35% and 65% of the average transverse cross-sectional dimension of the movable intermediate body minus the average transverse cross-sectional dimension of the movable central body; Device.

27. 27. The apparatus of claim 26, wherein the first distance is between 75% and 125% of the second distance.

28. 27. The apparatus of claim 26, wherein at least a portion of the semiconductor processing chamber is cylindrical and has a diameter equal to the average transverse cross-sectional dimension of the semiconductor processing chamber.

29. 29. The apparatus of claim 28, the movable intermediate body is ring-shaped; The movable central body is circular. Device.

30. 27. The apparatus of claim 26, further comprising at least one turbomolecular pump fluidly connected to the vacuum foreline.

31. 10. The apparatus of claim 1, a semiconductor processing chamber; a process gas delivery system configured to introduce one or more process gases into the semiconductor processing chamber; a vacuum foreline in fluid communication with the semiconductor processing chamber; Furthermore, the first configuration includes a maximum flow restricted state; the second configuration includes a minimum flow restriction state; when the movable intermediate is in the second configuration, there is a first minimum cross-sectional area between the movable intermediate and the semiconductor processing chamber, and there is a second minimum cross-sectional area between the movable intermediate and the valve seat; the first minimum cross-sectional area is between 75% and 125% of the second minimum cross-sectional area; when the movable intermediate body is in the second configuration and the movable central body is in the second configuration, there is a third minimum cross-sectional area between the movable central body and the semiconductor processing chamber, and there is a fourth minimum cross-sectional area between the movable central body and the gas permeable region of the movable intermediate body; the third minimum cross-sectional area is between 75% and 125% of the sum of the second minimum cross-sectional area and the fourth minimum cross-sectional area; Device.

32. 32. The apparatus of claim 31, further comprising at least one turbomolecular pump fluidly connected to the vacuum foreline.

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