Light-emitting device

Abstract

To provide a light-emitting device which achieves high heat radiation performance, high airtight performance, and high reliability.SOLUTION: A light-emitting device includes: a substrate having a placement part protruding upward from a major surface; an annular terminal holding member which is joined to the major surface of the substrate so as to surround the placement part; a cap joined to an upper surface of the terminal holding member and forming a sealing space with the substrate and the terminal holding member; a semiconductor laser element provided on a side surface of the placement part; and a lead terminal penetrating through the terminal holding member.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a light emitting device. [Background technology]

[0002] Patent Document 1 describes a semiconductor laser device including a stem including a block portion and an eyelet portion on the upper surface of which the block portion is provided, a semiconductor laser element mounted on the block portion, a cap fixed on the upper surface of the eyelet portion so as to cover the semiconductor laser element, and leads held in the eyelet portion. The lower surface of the eyelet portion is in thermal contact with a heat sink for dissipating heat from the semiconductor laser element. The document also describes that the leads may be fixed to the lower surface or side surface of the eyelet portion. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2011-18800 A Summary of the Invention [Problem to be solved by the invention]

[0004] In Patent Document 1, because the leads are fixed to the stem, the through-holes that serve as the lead fixing portions limit the path for transporting heat generated by the semiconductor laser element to the heat sink. Furthermore, to improve airtightness, it is necessary to select a stem material with a thermal expansion coefficient close to that of the leads and the sealing material used to fix the leads. If a stem material has a thermal expansion coefficient significantly different from that of the leads, etc., gaps are likely to form at the interface between the stem and the leads, etc., due to temperature changes when the semiconductor laser device is operated, which reduces the airtightness of the semiconductor laser device. [Means for solving the problem]

[0005] This application includes the following inventions. a base body having a mounting portion protruding upward from a main surface; an annular terminal holding member joined to the main surface of the base so as to surround the mounting portion; a cap joined to an upper surface of the terminal holding member and constituting a sealed space together with the base and the terminal holding member; a semiconductor laser element provided on a side surface of the mounting portion; a lead terminal passing through the terminal holding member; A light emitting device comprising: [Effects of the Invention]

[0006] A highly reliable light emitting device with excellent heat dissipation characteristics and airtightness can be provided. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is a schematic perspective view of a light emitting device according to Embodiment 1. FIG. [Figure 2] 1 is a schematic top view of a light emitting device according to a first embodiment. [Figure 3] 1 is a schematic side view of a light emitting device according to Embodiment 1. FIG. [Figure 4] FIG. 3 is a schematic cross-sectional view taken along line AA in FIG. 2. [Figure 5] FIG. 2 is a schematic perspective view showing the light emitting device according to the first embodiment in a state before the cap is bonded. [Figure 6] 1 is a schematic side view showing the state before the cap is bonded to the light emitting device according to Embodiment 1. FIG. [Figure 7] FIG. 2 is a schematic perspective view of a heat dissipation plate and a current-carrying member. [Figure 8] FIG. 10 is a schematic perspective view showing an example in which a plurality of light emitting devices are mounted. [Figure 9] FIG. 10 is a schematic top view of a light emitting device according to a second embodiment. [Figure 10] FIG. 10 is a schematic side view of a light emitting device according to a second embodiment. [Figure 11] FIG. 10 is a schematic perspective view of a light emitting device according to another embodiment. [Figure 12] FIG. 10 is a schematic top view of a light emitting device according to another embodiment. [Figure 13] FIG. 10 is a schematic perspective view showing a state before a cap is bonded to a light emitting device according to another embodiment. [Figure 14] FIG. 10 is a schematic top view showing a state before the cap is bonded to a light emitting device according to another embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the embodiments shown below are merely examples of methods for embodying the technical concept of the present invention, and the present invention is not limited to the following embodiments. Furthermore, in the following description, the same names and symbols indicate the same or similar components, and detailed descriptions will be omitted as appropriate.

[0009] <Embodiment 1> Fig. 1 is a schematic perspective view of a light emitting device 100 according to embodiment 1. Fig. 2 is a schematic top view of the light emitting device 100, and Fig. 3 is a schematic side view of the light emitting device 100 as viewed from the side from which lead terminals 13A and 13B of the light emitting device 100 protrude. Fig. 4 is a schematic cross-sectional view taken along line AA in Fig. 2. Fig. 5 is a schematic perspective view showing the state of the light emitting device 100 before bonding the cap 12, and Fig. 6 is a schematic side view showing the same state.

[0010] As shown in FIGS. 1 to 6, the light emitting device 100 has a base 10, a terminal holding member 11, a cap 12, lead terminals 13A and 13B, and a semiconductor laser element 14. The base 10 has a mounting portion 10a that protrudes upward from its main surface. The annular terminal holding member 11 is bonded to the main surface of the base 10 so as to surround the mounting portion 10a. The cap 12 is bonded to the upper surface of the terminal holding member 11, and together with the base 10 and the terminal holding member 11, forms a sealed space 17. The semiconductor laser element 14 is provided on the side surface of the mounting portion 10a. The lead terminals 13A and 13B pass through the terminal holding member 11.

[0011] In the light emitting device 100, lead terminals 13A and 13B are held by a terminal holding member 11 joined to a base 10. More specifically, through holes larger than the outer diameter of the lead terminals 13A and 13B are provided in the side surface of the terminal holding member 11, the lead terminals 13A and 13B are arranged to pass through the through holes, and an insulating material 15 is provided between the through holes and the lead terminals. Because the terminal holding member 11 is typically made of metal, which is a conductive material, filling the gap between the terminal holding member 11 and the lead terminals 13A and 13B with insulating material 15 prevents short-circuiting of the lead terminals 13A and 13B and ensures sufficient airtightness.

[0012] Thus, in the light-emitting device 100, a terminal holding member 11 is provided in addition to the base 10, allowing the lead terminals 13A and 13B to protrude laterally. This allows the entire underside of the base 10 to be connected to a heat sink or the like, thereby enabling more efficient heat dissipation from the underside of the base 10. Furthermore, if through holes were provided in the base 10, the heat from the semiconductor laser element 14 would have to bypass the through holes to reach the heat sink or the like. However, since the base 10 does not have such through holes, heat can be dissipated more efficiently. Furthermore, since the cap 12 is bonded to the terminal holding member 11 rather than the base 10, a material with high thermal conductivity can be used for the base 10, improving heat dissipation. This is for the following reasons.

[0013] First, because the cap 12 is bonded after the semiconductor laser element 14 is mounted, resistance welding is typically used as a bonding method that can be performed at low temperatures. For this reason, a material suitable for resistance welding is selected for the cap 12. Furthermore, resistance welding requires a small bonding area, and bonding materials with different linear expansion coefficients may result in delamination and reduced airtightness. Therefore, it is preferable for the material to which the cap 12 is bonded to have a linear expansion coefficient similar to that of the cap 12. If the cap 12 were to be bonded to the base 10, the material for the base 10 would have to be selected from those with a linear expansion coefficient similar to that of the cap 12, but this would make it difficult to use a material with good heat dissipation. Therefore, in the light-emitting device 100, the cap 12 is bonded to the terminal holding member 11. As a result, the terminal holding member 11 needs to be made of a material with a linear expansion coefficient similar to that of the cap 12, and the base 10 can be made of a material with high thermal conductivity regardless of its linear expansion coefficient. Furthermore, since the base 10 and the terminal holding member 11 can be bonded before the semiconductor laser element 14 is mounted, a bonding method with a large bonding area, such as bonding with a metal adhesive, can be used. Therefore, even if the difference in linear expansion coefficient between the terminal holding member 11 and the base 10 is relatively large, they are unlikely to peel off to the extent that their airtightness is reduced. Therefore, a material with high thermal conductivity can be selected for the base 10 regardless of its linear expansion coefficient. Furthermore, the material holding the lead terminals 13A and 13B needs to have a linear expansion coefficient close to that of the lead terminals 13A and 13B and the insulating material 15, and in the light-emitting device 100, this material is also the terminal holding member 11. Therefore, for this reason, a material with high thermal conductivity can be selected for the base 10 regardless of its linear expansion coefficient.

[0014] The base 10 is preferably made of a material with high thermal conductivity. This allows for efficient heat dissipation from the semiconductor laser element. Specific examples of preferred materials for the base 10 include copper or a copper alloy. The surface may be gold-plated. Heat generated by the semiconductor laser element 14 is dissipated to the outside through the mounting portion 10a and the main surface (lower surface) of the base 10 opposite the mounting portion 10a. For heat dissipation, the lower surface of the base 10 is preferably attached to a heat sink, such as a heat sink plate. The heat sink and the lower surface of the base 10 can be connected with grease or the like. As shown in FIG. 2, the outer edge of the base 10 can be approximately circular when viewed from above. A recess may be provided on the outer edge of the base 10. The top view shape of the recess is, for example, approximately triangular or rectangular. Such a recess is used, for example, as a guide for aligning the orientation of the base 10.

[0015] Furthermore, it is desirable that the side surface of the mounting portion 10a on which the semiconductor laser element 14 is provided be approximately perpendicular to the bottom surface of the base 10. This allows the optical axis of the laser light emitted by the semiconductor laser element 14 to be approximately perpendicular to the bottom surface of the base 10. Furthermore, the mounting portion 10a may be separate from the base of the base 10, but it is preferable that they are integrated. A gap between the mounting portion 10a and the base reduces heat transport efficiency, but this can be avoided by integrating them. For example, the base 10 including the mounting portion 10a is formed by press-molding a copper alloy plate. It is desirable that the side surface on which the semiconductor laser element 14 is provided be flat. Note that when the mounting portion and the base are made of different materials, it is desirable that the mounting portion 10a be made of a material with high thermal conductivity. Specific examples of preferred materials for the mounting portion 10a include copper or a copper alloy. The surface may be gold-plated.

[0016] It is preferable that the difference in thermal expansion coefficient between the terminal holding member 11 and the lead terminals 13A, 13B is smaller than the difference in thermal expansion coefficient between the base 10 and the lead terminals 13A, 13B. Specific examples of materials for the terminal holding member 11 include alloys containing iron. The surface may be gold-plated. Furthermore, if the base 10 is made of a material with good thermal conductivity, it is conceivable that the linear expansion coefficient will differ from that of the cap 12. Therefore, it is preferable that the linear expansion coefficient of the terminal holding member 11 is intermediate between that of the cap 12 (holding portion 12b) and the base 10. The terminal holding member 11 is bonded to the base 10 with a metal adhesive such as silver solder. Typically, the width of the joint between the base 10 and the terminal holding member 11 is larger than the width of the joint between the terminal holding member 11 and the cap 12. To ensure sufficient bonding of the terminal holding member 11 to the base 10 and ensure airtightness, it is preferable that the outer edge of the terminal holding member 11 be located inside the outer edge of the base 10 when viewed from above. Furthermore, since the cap 12 is bonded to the upper surface of the terminal holding member 11, it is preferable that the thickness of the terminal holding member 11 be greater than the thickness of the cap 12. For example, the thickness is set to 0.25 mm.

[0017] As shown in FIG. 2, in a top view, the outer edge of the terminal holding member 11 preferably includes a proximity portion 11a that is close to the outer edge of the base 10 and a distance portion 11b that is farther from the outer edge of the base 10 than the proximity portion 11a. The lead terminals 13A and 13B protrude from the distance portion 11b. This arrangement allows the lead terminals 13A and 13B to be placed above the base 10, making it easy to arrange multiple light-emitting devices 100 in close proximity. In a top view, the distance portion 11b is preferably linear. By providing a through hole that penetrates approximately perpendicularly to the substantially flat surface, a cylindrical through hole is formed. The lead terminals 13A and 13B can be firmly fixed by assembling them using a cylindrical insulating material 15. The size of the through hole through which the lead terminals 13A and 13B pass is, for example, φ1.2 mm.

[0018] It is preferable that the shape of the proximal portion 11a in a top view is substantially the same as a part of the shape of the base 10 in a top view. For example, as shown in FIG. 2, if the outer edge of the base 10 is substantially circular, the proximal portion 11a is configured as a concentric arc with a smaller radius than the outer edge of the base 10. Note that if a depression is provided on the outer edge of the base 10, the shape of the outer edge of the base 10 can be considered to be a shape that ignores the depression. Furthermore, the length of the separated portion 11b in a top view can be approximately longer than the radius of the arc of the proximal portion 11a.

[0019] The terminal holding member 11 is bonded by, for example, placing it on the base 10 coated with silver solder, with the lead terminals 13A and 13B fixed in advance with the insulating material 15, and heating it. Usually, the semiconductor laser element 14 and the like are mounted thereafter. For this reason, it is preferable that the upper end of the terminal holding member 11 is positioned lower than the semiconductor laser element 14 and other components mounted on the sides of the mounting portion 10a.

[0020] The light emitting device 100 has at least two lead terminals 13A and 13B. For example, the lead terminal 13A is an anode terminal, and the lead terminal 13B is a cathode terminal. The lead terminals 13A and 13B are made of a material with good electrical conductivity. Specific examples include an alloy of iron, nickel, and kovar, or an alloy of iron and nickel. The surfaces may be gold-plated. The lead terminals 13A and 13B have a cylindrical shape or a bent cylindrical shape, for example. The diameter of the cross section perpendicular to the extension direction of the lead terminals 13A and 13B is, for example, 0.6 mm.

[0021] As shown in FIG. 4, the lead terminals 13A and 13B are preferably bent to include a first portion 13Ba and a second portion 13Bb. The first portion 13Ba extends along the side surface of the mounting portion 10a inside the sealed space 17 defined by the base 10, the terminal holding member 11, and the cap 12, and is a portion to which a wire 16 for electrical connection to the semiconductor laser element 14 is joined. The second portion 13Bb extends along the main surface of the base 10, penetrates the terminal holding member 11, and is disposed outside the sealed space 17. The inclusion of the first portion 13Ba allows the wire bonding surfaces of the semiconductor laser element 14 and the lead terminals 13A and 13B to face in the same direction. This allows for a light emitting device 100 that is highly suitable for mass production.

[0022] The first portion 13Ba extending in a direction along the side surface of the mounting portion 10a is typically disposed approximately parallel to the side surface of the mounting portion 10a. The second portion 13Bb extending in a direction along the main surface of the base 10 is typically disposed approximately parallel to the main surface of the base 10. That is, the lead terminals 13A and 13B are typically L-shaped.

[0023] Furthermore, in top view, it is preferable that one end of each of the lead terminals 13A and 13B, which is located outside the sealed space 17, is located inside the outer edge of the base 10. In other words, it is preferable that the lead terminals 13A and 13B are completely contained above the base 10. This allows the outer edge of the light emitting device 100 to coincide with the outer edge of the base 10, so that multiple light emitting devices 100 can be arranged closely together. If the base 10 is not electrically connected to the semiconductor laser element 14, multiple light emitting devices 100 may be arranged close enough that the bases 10 are in contact with each other.

[0024] The through holes of the terminal holding member 11 are filled with an insulating material 15, which fixes the lead terminals 13A and 13B. The insulating material 15 is made of, for example, a glass material. To achieve airtight sealing, the insulating material 15 is preferably made of a material with a thermal expansion coefficient close to that of the terminal holding member 11 and the lead terminals 13A and 13B, such as borosilicate glass. By pressing the insulating material 15 against the terminal holding member 11, airtightness can be ensured.

[0025] Since the cap 12 is bonded to the upper surface of the terminal holding member 11, it is preferable that the outer edge of the cap 12 is approximately the same as but located further inward than the outer edge of the terminal holding member 11 in a top view. The cap 12 has a window portion 12a and a holding portion 12b. The window portion 12a is a light-transmitting member disposed within the through-hole of the holding portion 12b. Light from the semiconductor laser element 14 is extracted through the window portion 12a. For example, the window portion 12a is a glass component having a diameter of 2.3 mm and a thickness of 0.3 mm, and is bonded to the holding portion 12b with low-melting-point glass. The shape of the window portion 12a in a top view is, for example, circular. In a top view, the window portion 12a is typically disposed in the center of the base 10. The holding portion 12b and the terminal holding member 11 are bonded together by, for example, welding. The holding portion 12b is made of, for example, stainless steel (SUS).

[0026] The semiconductor laser element 14 is, for example, a nitride semiconductor laser element. The oscillation wavelength may be in the ultraviolet to green range. The semiconductor laser element 14 may be attached to the mounting portion 10a via a submount 18. The submount 18 is typically a component with high electrical insulation and high thermal conductivity. Examples of the submount include aluminum nitride and silicon carbide. For example, metal layers are provided on both the front and back surfaces of an insulating silicon carbide substrate, and the semiconductor laser element 14 is fixed to the metal layer on the front surface and is fixed to the mounting portion 10a by the metal layer on the back surface.

[0027] 7 and 8 show an example of mounting a plurality of light emitting devices 100. As shown in FIGS. 7 and 8, the base 10 of each light emitting device 100 is fixed to each of a plurality of recesses 20a of the heat dissipation plate 20, either directly or via grease, solder, or the like. The shape and size of the recesses 20a are substantially the same as those of the base 10. The through holes 20b are for fixing, and for example, screws are inserted to fix the heat dissipation plate 20 to a heat sink or the like. Note that through holes may be used instead of the recesses 20a. In this case, the base 10 of the light emitting device 100 may be thermally connected to the heat sink or the like directly or via grease or the like.

[0028] By disposing the current-carrying member 30 between the base 10 and the lead terminals 13A and 13B, it is possible to supply power to a plurality of light-emitting devices 100. Wires 31a to 31j are provided on the surface of the current-carrying member 30, and are electrically connected to the lead terminals 13A and 13B, respectively, by solder or the like. The wires 31a to 31j are connected by internal wiring provided inside the current-carrying member 30 so that the plurality of light-emitting devices 100 are connected in series. That is, wire 31b is connected to wire 31c, wire 31d is connected to wire 31e, wire 31f is connected to wire 31g, and wire 31h is connected to wire 31i. For example, the current-carrying member 30 may be further connected to external wiring, with wire 31a serving as the anode side and wire 31j serving as the cathode side.

[0029] A plurality of light emitting devices 100 connected in series in this manner may be arranged in several rows, and the light emitting portions (window portions 12a) of the light emitting devices 100 may be arranged in a matrix. Because the lead terminals 13A and 13B of the light emitting device 100 are located above the base 10, another light emitting device 100 can be arranged adjacent to the protruding side of the lead terminals 13A and 13B.

[0030] <Embodiment 2> Fig. 9 is a schematic top view of a light emitting device 200 according to the second embodiment, and Fig. 10 is a schematic side view of the light emitting device 200. As shown in Figs. 9 and 10, the light emitting device 200 according to the second embodiment differs from the light emitting device 100 according to the first embodiment in that the terminal holding member 211 has an annular shape in top view. In this case, a cylindrical cap 212 can be used. The cylindrical cap 212 may be the same as that used in conventional light emitting devices in which lead terminals penetrate a base.

[0031] As shown in FIG. 9 , the lead terminals 213A and 213B preferably penetrate the terminal holding member 211 in a direction radially extending from the center of the light emitting device 200 in a top view. This reduces the amount of protrusion of the lead terminals 213A and 213B from the base 210 in a top view, allowing multiple light emitting devices 200 to be arranged closely together. This is particularly preferable for a matrix arrangement in which multiple light emitting devices 200 are arranged vertically and horizontally. Furthermore, since the through holes formed in the terminal holding member 211 can be formed in a shape close to a cylinder, the lead terminals 213A and 213B can be fixed using a cylindrical insulating material 215. The cylindrical insulating material 215 can be produced by cutting out a wire, which allows for inexpensive production. The insulating material 215 may protrude from the terminal holding member 211 in a top view.

[0032] <Other embodiments> Another embodiment will be described with reference to Figures 11 to 14. This embodiment differs from the light emitting device of embodiment 1 in that the semiconductor laser element is provided on the upper surface of the mounting portion, and that a light reflecting member (light reflecting mirror) that changes the direction of light emitted from the semiconductor laser element from parallel to the upper surface of the mounting portion to perpendicular thereto is further provided on the upper surface of the mounting portion, but is otherwise the same as embodiment 1.

[0033] A light emitting device 300 according to another embodiment includes a base 310 having a mounting portion 310a protruding upward from its main surface, an annular terminal holding member 311 joined to the main surface of the base 310 so as to surround the mounting portion 310a, a cap 312 joined to the upper surface of the terminal holding member 311 and constituting a sealed space together with the base 310 and the terminal holding member 311, a semiconductor laser element 314 and a light reflecting member 319 provided on the upper surface of the mounting portion 310a, and lead terminals 313A and 313B passing through the terminal holding member.

[0034] Fig. 11 is a schematic perspective view of a light emitting device according to another embodiment, Fig. 12 is a schematic top view of a light emitting device according to another embodiment, Fig. 13 is a schematic perspective view showing the state of the light emitting device according to another embodiment before the cap is bonded, and Fig. 14 is a schematic top view showing the state of the light emitting device according to another embodiment before the cap is bonded. Figs. 13 and 14 are views for explaining the structure of the sealed space in the light emitting device according to another embodiment.

[0035] Here, cap 312 has window portion 312a and holding portion 312b. Window portion 312a is a light-transmitting member disposed in a through-hole of holding portion 312b. Light from semiconductor laser element 314 travels in a direction parallel to the upper surface of the mounting portion, is reflected by light reflecting member 319 in a direction perpendicular to the main surface of the substrate, and is extracted through window portion 312a. Semiconductor laser element 314 is electrically connected to lead terminals 312a and 312b by wires.

[0036] The mounting portion 310a protrudes upward from the main surface of the substrate by a size approximately equal to the size of the inside of the annular terminal holding member, but it does not have to protrude. In this case, the mounting portion is a mounting area on the main surface of the substrate, and the mounting area includes the semiconductor laser element 314 and the light reflecting member 319. [Explanation of symbols]

[0037] 100, 200, 300 Light-emitting device 10, 210, 310 base 10a, 310a Placement section 11, 211, 311 Terminal holding member 11a: adjacent portion, 11b: distant portion 12, 212, 312 Caps 12a, 312a: window portion; 12b, 312b: holding portion 13A, 13B, 213A, 213B, 313A, 313B lead terminals 13Ba 1st part, 13Bb 2nd part 14, 314 Semiconductor laser element 15, 215 Insulation 16 wires 17 Sealed space 18 Submount 20 Heat dissipation plate 20a recess, 20b through hole 30 Conductive materials 31a~31j Wiring 319 Light-reflecting materials

Claims

1. a base body integrally formed with a base portion having a main surface and a mounting portion protruding upward from the main surface; an annular terminal holding member joined to the main surface of the base so as to surround the mounting portion; a semiconductor laser element provided on an upper surface of the mounting portion; a first lead terminal passing through the terminal holding member; a second lead terminal passing through the terminal holding member; Equipped with the first lead terminal and the second lead terminal each include a first portion to which a wire for electrical connection to the semiconductor laser element is joined, and a second portion that penetrates the terminal holding member; in a plan view seen from a direction perpendicular to an upper surface of the mounting portion on which the semiconductor laser element is provided, the first portion of the first lead terminal and the first portion of the second lead terminal extend in a direction along an optical axis of laser light emitted by the semiconductor laser element, and the semiconductor laser element is disposed between the first portion of the first lead terminal and the first portion of the second lead terminal, The first lead terminal and the second lead terminal have the first portion and the second portion extending in the same direction, a light-emitting device in which, in the plan view, an emission end face of the semiconductor laser element does not protrude beyond a straight line connecting the tip of the first lead terminal and the tip of the second lead terminal in a direction in which light travels.

2. the first portion of the first lead terminal and the first portion of the second lead terminal extend at equal intervals; The light emitting device according to claim 1 , wherein the second portion of the first lead terminal and the second portion of the second lead terminal extend at equal intervals.

3. 3. The light emitting device according to claim 1, further comprising a cap joined to an upper surface of said terminal holding member, said cap forming a sealed space together with said base and said terminal holding member.

4. a light reflecting member onto which light emitted from the semiconductor laser element is incident, In a plan view seen from a direction perpendicular to an upper surface of the mounting portion on which the semiconductor laser element is provided, 4. The light emitting device according to claim 1, wherein the light reflecting member is not disposed between the first portion of the first lead terminal and the first portion of the second lead terminal.

5. 5. The light emitting device according to claim 1, wherein a glass material is disposed between the first lead terminal and the second lead terminal and the terminal holding member.

6. A light-emitting device described in any one of claims 1 to 5, wherein, in a planar view from a direction perpendicular to the upper surface of the mounting portion on which the semiconductor laser element is provided, the outer edge of the terminal holding member is located inside the outer edge of the base.

7. In a plan view seen from a direction perpendicular to an upper surface of the mounting portion on which the semiconductor laser element is provided, 7. The light emitting device according to claim 4, wherein the light reflecting member is disposed on the light traveling side of the straight line.

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