Silicon precursor materials, silicon-containing films, and related methods

Abstract

Some embodiments relate to a method for depositing a silicon precursor on a substrate. The method includes obtaining a silicon precursor material containing at least one siloxane bond and obtaining at least one co-reactant precursor material. The silicon precursor material is volatilized to obtain a silicon precursor vapor. The at least one co-reactant precursor material is volatilized to obtain at least one co-reactant precursor vapor. The silicon precursor vapor and the at least one co-reactant precursor vapor are contacted with the substrate under chemical vapor deposition conditions sufficient to form a silicon-containing film on the surface of the substrate. Some embodiments relate to a silicon precursor material for chemical vapor deposition.

Description

[Technical Field]

[0001] The present disclosure relates generally to silicon precursor materials, silicon-containing films, and related methods. [Background technology]

[0002] Tetraethyl orthosilicate (TEOS) is used as a precursor in low-temperature deposition processes to form thin films of silicon dioxide (e.g., SiO2). Low-temperature deposition processes are conducted at temperatures below 200°C. TEOS is not a suitable precursor for forming silicon-containing thin films by high-temperature deposition processes. Summary of the Invention

[0003] Some embodiments relate to precursors for chemical vapor deposition. In some embodiments, the precursors for chemical vapor deposition can comprise, consist of, or consist essentially of a silicon precursor material. In some embodiments, the silicon precursor material has the formula: (A 1 A 2 A 3 )Si-O-Si(B 1 B 2 B 3 )(wherein, A 1 , A 2 , A 3 , B 1 , B 2 , and B 3 wherein each of is independently hydrogen, halide, alkyl, cycloalkyl, alkoxy, amino, alkylamino, aminoalkyl, ethynyl, phenyl, allyl, vinyl, or acetoxy. In some embodiments, the silicon precursor material may be sufficiently reactive with at least one co-reactant precursor material under chemical vapor deposition conditions to provide a silicon-containing film as a reaction product.

[0004] Some embodiments relate to a method for depositing a silicon precursor on a substrate. In some embodiments, the method can include, consist of, or consist essentially of one or more of the following steps: obtaining a silicon precursor material comprising at least one siloxane bond; obtaining at least one co-reactant precursor material; volatilizing the silicon precursor material to obtain a silicon precursor vapor; volatilizing the at least one co-reactant precursor material to obtain at least one co-reactant precursor vapor; and contacting the silicon precursor vapor and the at least one co-reactant precursor vapor with a substrate under chemical vapor deposition conditions sufficient to form a silicon-containing film on the surface of the substrate.

[0005] Reference is made to the drawings which form a part of this disclosure and which illustrate embodiments in which the materials and methods described herein may be practiced. [Brief explanation of the drawings]

[0006] [Figure 1] 1 is a flowchart of a method for depositing a silicon precursor on a substrate according to some embodiments of the present disclosure. [Figure 2] FIG. 1 is a schematic illustration of a silicon-containing article according to some embodiments of the present disclosure. [Figure 3] FIG. 1 is a graphical representation of the deposition rate of bis(diethylamino)-1,1,3,3-tetramethyldisiloxane (BDEA-TMDSO) compared to tetraethyl orthosilicate (TEOS) at 560° C. and 650° C. in accordance with some embodiments of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0007] As used herein, the term "siloxane bond" refers to a group having the formula: -(Si-O-Si) n- (where n is 1 to 6) bond. In some embodiments, one or more siloxane bonds may associate to form a siloxane compound. In some embodiments, the siloxane compound may comprise, consist of, consist essentially of, or be selected from the group consisting of at least one of disiloxane, oligosiloxane, cyclic siloxane, polysiloxane, or any combination thereof. In some embodiments, when two or more siloxane bonds are present, the siloxane bonds may share one or more silicon atoms.

[0008] As used herein, the term "alkyl" refers to a hydrocarbon chain radical having 1 to 30 carbon atoms. The alkyl may be attached through a single bond. An alkyl having n carbon atoms is referred to as "C n For example, "C alkyl" can include n-propyl and isopropyl. Alkyl having a range of carbon atoms, such as 1 to 30 carbon atoms, is sometimes referred to as C1-C 30 In some embodiments, an alkyl is saturated (e.g., single bond). In some embodiments, an alkyl is unsaturated (e.g., double and / or triple bond). In some embodiments, an alkyl is linear. In some embodiments, an alkyl is branched. In some embodiments, an alkyl is substituted. In some embodiments, an alkyl is unsubstituted. In some embodiments, an alkyl is C1-C 12 Alkyl, C1-C 11 Alkyl, C1-C 10The alkyl may comprise, consist of, consist essentially of, or be selected from the group consisting of at least one of alkyl, C1-C9 alkyl, C1-C8 alkyl, C1-C7 alkyl, C1-C6 alkyl, C1-C4 alkyl, C1-C3 alkyl, or any combination thereof. In some embodiments, the alkyl may comprise, consist essentially of, or be selected from the group consisting of at least one of methyl, ethyl, n-propyl, 1-methylethyl (isopropyl), n-butyl, isobutyl, sec-butyl, n-pentyl, 1,1-dimethylethyl (t-butyl), n-pentyl, isopentyl, n-hexyl, isohexyl, 3-methylhexyl, 2-methylhexyl, octyl, decyl, dodecyl, octadecyl, or any combination thereof.

[0009] As used herein, the term "cycloalkyl" refers to a non-aromatic carbocyclic ring group attached through a single bond and having 3 to 8 carbon atoms in the ring. The term includes monocyclic non-aromatic carbocyclic rings and polycyclic non-aromatic carbocyclic rings. For example, two or more cycloalkyls can be fused, bridged, or fused and bridged to form a polycyclic non-aromatic carbocyclic ring. In some embodiments, a cycloalkyl can comprise, consist essentially of, or be selected from the group consisting of at least one of cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, or any combination thereof.

[0010] As used herein, the term "alkoxy" refers to a radical of the formula -OR, where R is alkyl as defined herein. In some embodiments, alkoxy can comprise, consist essentially of, or be selected from the group consisting of at least one of methoxy, ethoxy, methoxy, ethoxy, n-propoxy, 1-methylethoxy (isopropoxy), n-butoxy, iso-butoxy, sec-butoxy, tert-butoxy, or any combination thereof.

[0011] As used herein, the terms “amine,” “alkylamino,” and the like refer to a group having the formula —N(R a R b R c )(wherein, R a , R b , and R cis independently hydrogen or alkyl, as defined herein. In some embodiments, the term "amine" includes amino, as defined herein. In some embodiments, an amine can comprise, consist of, or consist essentially of a primary amine, a secondary amine, a tertiary amine, or a quaternary amine. In some embodiments, an amine can comprise, consist of, or consist essentially of an alkyl amine, a dialkyl amine, or a trialkyl amine. In some embodiments, an amine can comprise, consist of, consist essentially of, or be selected from the group consisting of at least one of methylamine, dimethylamine, ethylamine, diethylamine, isopropylamine, di-isopropylamine, butylamine, sec-butylamine, tert-butylamine, di-sec-butylamine, isobutylamine, di-isobutylamine, di-tert-pentylamine, ethylmethylamine, isopropyl-n-propylamine, or any combination thereof.Examples of alkylamines include, but are not limited to, primary alkylamines, such as, but not limited to, methylamine, ethylamine, n-propylamine, isopropylamine, n-butylamine, sec-butylamine, isobutylamine, t-butylamine, pentylamine, 2-aminopentane, 3-aminopentane, 1-amino-2-methylbutane, 2-amino-2-methylbutane, 3-amino-2-methylbutane, 4-amino-2-methylbutane, hexylamine, 5-amino-2-methylpentane, heptylamine, octylamine, nonylamine, decylamine, undecylamine, dodecylamine, tridecylamine, tetradecylamine, pentadecylamine, hexadecylamine, heptadecylamine, and octadecylamine; secondary alkylamines, such as, but not limited to, dimethylamine, diethylamine, dipropylamine, diisopropylamine, dibutylamine, diiso ... sec-butylamine, di-t-butylamine, dipentylamine, dihexylamine, diheptylamine, dioctylamine, dinonylamine, didecylamine, methylethylamine, methylpropylamine, methylisopropylamine, methylbutylamine, methylisobutylamine, methyl-sec-butylamine, methyl-t-butylamine, methylamylamine, methylisoamylamine, ethylpropylamine, ethylisopropylamine, ethylbutylamine, ethylisobutylamine, ethyl-sec-butylamine, ethylamine, ethylisoamylamine, propylbutylamine, and propylisobutylamine; and tertiary alkylamines such as, but not limited to, trimethylamine, triethylamine, tripropylamine, tributylamine, tripentylamine, dimethylethylamine, methyldiethylamine, and methyldipropylamine.Examples of polyamines may include, but are not limited to, one or more of ethylenediamine, propylenediamine, trimethylenediamine, tetramethylenediamine, 1,3-diaminobutane, 2,3-diaminobutane, pentamethylenediamine, 2,4-diaminopentane, hexamethylenediamine, heptamethylenediamine, octamethylenediamine, nonamethylenediamine, N-methylethylenediamine, N,N-dimethylethylenediamine, trimethylethylenediamine, N-ethylethylenediamine, N,N-diethylethylenediamine, triethylethylenediamine, 1,2,3-triaminopropane, hydrazine, tris(2-aminoethyl)amine, tetra(aminomethyl)methane, diethylenetriamine, triethylenetetramine, tetraethylpentamine, heptaethyleneoctamine, nonaethylenedecamine, and diazabicycloundecene.

[0012] As used herein, the term "halide" refers to -Cl, -Br, -I, or -F.

[0013] As used herein, the term "ethynyl" refers to -C≡CH.

[0014] As used herein, the term "phenyl" refers to -C6H5.

[0015] As used herein, the term "amino" refers to --NH.sub.2.

[0016] As used herein, the term "allyl" refers to -CH2CH=CH2.

[0017] As used herein, the term "vinyl" refers to -CH=CH2.

[0018] As used herein, the term "acetoxy" refers to -OC(=O)CH3.

[0019] Some embodiments relate to silicon precursor materials. The silicon precursor materials may exhibit one or more of improved thermal stability at high temperatures (e.g., temperatures of 500°C or higher) and improved thin film deposition rates (e.g., deposition rates two times faster than those of conventional precursor materials). The silicon precursor materials may exhibit improved performance in high-temperature chemical vapor deposition processes. Further advantages of the silicon precursor materials of the present disclosure may include, but are not limited to, one or more of improved step coverage at low pressures, improved step coverage at high temperatures, and reduced amounts of impurities, among others. The silicon precursor materials may be used in high-temperature chemical vapor deposition (CVD) processes to improve the quality of silicon-containing films resulting therefrom.

[0020] In some embodiments, the silicon precursor material can comprise, consist of, or consist essentially of one or more siloxane bonds. For example, in some embodiments, the silicon precursor material can comprise, consist of, or consist essentially of one siloxane bond, two siloxane bonds, three siloxane bonds, or four or more siloxane bonds.

[0021] In some embodiments, the silicon precursor material has the formula: (A 1 A 2 A 3 )Si-O-Si(B 1 B 2 B 3 ) The compound may comprise, consist of, or consist essentially of the compound of formula (I).

[0022] In the formula, A 1 , A 2 , A 3 , B 1 , B 2 , and B 3Each of is independently hydrogen, halide, alkyl, cycloalkyl, alkoxy, amino, alkylamino, aminoalkyl, ethynyl, phenyl, allyl, vinyl, or acetoxy.

[0023] In some embodiments, the silicon precursor material is one of the following: bis(diethylamino)-1,1,3,3-tetramethyldisiloxane (BDEA-TMDSO), 1,3-bis(isopropylamino)tetramethyldisiloxane (BIPA-TMDSO), hexamethyldisiloxane (HMDSO), 1,3-diphenyl-1,3-dimethyldisiloxane, 1,1,3,3-tetramethyldisiloxane, 1,1,1-triethyl-3,3-dimethyldisiloxane, 1,1,3,3-tetra-n-octyldimethyldisiloxane, bis(nonafluorohexyl)disiloxane, bis(isopropylamino)tetramethyl ... 1,3-bis(trifluoropropyl)tetramethyldisiloxane, 1,3-di-n-butyltetramethyldisiloxane, 1,3-di-n-octyltetramethyldisiloxane, 1,3-diethyltetramethyldisiloxane, 1,3-diphenyltetramethyldisiloxane, hexa-n-butyldisiloxane, hexaethyldisiloxane, hexavinyldisiloxane, 1,1,1,3,3-pentamethyl-3-acetoxydisiloxane, 1-allyl-1,1,3,3-tetramethyldisiloxane, 1,3-bis bis(3-aminopropyl)tetramethyldisiloxane, 1,3-bis(heptadecafluoro-1,1,2,2-tetrahydrodecyl)tetramethyldisiloxane, 1,3-divinyltetraphenyldisiloxane, 1,3-divinyltetramethyldisiloxane, 1,3-diallyltetrakis(trimethylsiloxy)disiloxane, 1,3-diallyltetramethyldisiloxane, 1,3-diphenyltetrakis(dimethylsiloxy)disiloxane, (3-chloropropyl)pentamethyldisiloxane, 1,3-divinyltetrakis(trimethylsiloxy)disiloxane 1,1,3,3-tetraisopropyl-disiloxane, 1,1,3,3-tetravinyldimethyldisiloxane, 1,1,3,3-tetracyclopentyldichloro-disiloxane, vinylpentamethyldisiloxane, 1,3-bis(3-chloroisobutyl)tetramethyldisiloxane, hexaphenyldisiloxane, 1,1,1-triethyl-3,3,3-trimethyldisiloxane, 1,3-bis(chloromethyl)tetramethyldisiloxane, 1,1,3,3-tetramethyl-1,3-diethoxydisiloxane, 1,1,3,3-Tetraphenyldimethyldisiloxane, methacryloxypentamethyldisiloxane, pentamethyldisiloxane, 1,3-bis(3-chloropropyl)tetramethyldisiloxane, 1,3-bis(4-hydroxybutyl)tetramethyldisiloxane, 1,3-bis(triethoxysilylethyl)tetramethyldisiloxane, 3-aminopropylpentamethyldisiloxane, 1,3-dichloro-1,3-diphenyl-1,3-dimethyldisiloxane, 1,3-diethynyltetramethyldisiloxane, n-butyl-1,1,3,3-tetramethyldisiloxane Disiloxane, 1,3-dichlorotetraphenyldisiloxane, 1,3-dichlorotetramethyldisiloxane, 1,3-di-t-butyldisiloxane, 1,3-dimethyltetramethoxydisiloxane, 1,3-divinyltetraethoxydisiloxane, 1,1,3,3-tetraethoxy-1,3-dimethyldisiloxane, vinyl-1,1,3,3-tetramethyldisiloxane, platinum-[1,3-bis(cyclohexyl)imidazol-2-ylidene divinyltetramethyldisiloxane], hexachlorodisiloxane (HCDSO), 1,1,3,3-tetraisopropyl Pyr-1-chlorodisiloxane, 1,1,1-trimethyl-3,3,3-triphenyldisiloxane, 1,3-bis(trimethylsiloxy)-1,3-dimethyldisiloxane, 3,3-diphenyl-tetramethyltrisiloxane, 3-phenylheptamethyltrisiloxane, hexamethylcyclotrisiloxane, n-propylheptamethyltrisiloxane, 1,5-diethoxyhexamethyltrisiloxane, 3-ethylheptamethyl-trisiloxane, 3-(tetrahydrofurfuryloxypropyl)heptamethyltrisiloxane, 3-(3,3,3-trif (3,3,3-trifluoropropyl)heptamethyltrisiloxane, 1,1,3,5,5-pentaphenyl-1,3,5-trimethyltrisiloxane, octamethyltrisiloxane, 1,1,5,5-tetraphenyl-1,3,3,5-tetramethyltrisiloxane, hexaphenylcyclotrisiloxane, 1,1,1,5,5,5-hexamethyltrisiloxane, octachlorotrisiloxane, 3-phenyl-1,1,3,5,5-pentamethyltrisiloxane, (3,3,3-trifluoropropyl)methylcyclotrisiloxane, 1,3,5-trivinyl-1,1,3,5,5-Pentamethyltrisiloxane, 1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane, 3-(m-pentadecylphenoxypropyl)heptamethyltrisiloxane, limonenyltrisiloxane, 3-dodecylheptamethyltrisiloxane, 3-octylheptamethyltrisiloxane, 1,3,5-triphenyltrimethylcyclotrisiloxane, 1,1,1,3,3,5,5-heptamethyltrisiloxane, 1,1,3,3,5,5-hexamethyltrisiloxane, 1,1,1,5,5,5-hexaethyl-3- Methyltrisiloxane, 1,5-dichlorohexamethyltrisiloxane, 3-(3-hydroxypropyl)heptamethyltrisiloxane, hexamethylcyclomethylphosphonoxytrisiloxane, 3-octadecylheptamethyltrisiloxane, tetrakis(dimethylsiloxy)silane, 1,1,3,3,5,5,7,7-octamethyltetrasiloxane, diphenylsiloxane-dimethylsiloxane copolymer, 1,3-diphenyl-1,3-dimethyldisiloxane, octamethylcyclotetrasiloxane, 1,3-bis(trimethylsiloxy)silane (hydroxypropyl)-1,3-dimethyldisiloxane, dimethylsiloxane-[65-70% (60% propylene oxide / 40% ethylene oxide)] block copolymer, bis(hydroxypropyl)tetramethyldisiloxane, tetra-n-propyltetramethylcyclotetrasiloxane, octaethylcyclotetrasiloxane, decamethyltetrasiloxane, dodecamethylcyclohexasiloxane, dodecamethylpentasiloxane, tetradecamethylhexasiloxane, hexaphenylcyclotrisiloxane, polydimethylsiloxane, poly The composition may comprise, consist essentially of, or be selected from the group consisting of at least one of octadecylmethylsiloxane, hexacosyl-terminated polydimethylsiloxane, decamethylcyclopentasiloxane, poly(3,3,3-trifluoropropylmethylsiloxane), trimethylsiloxy-terminated polydimethylsiloxane, 1,1,3,3,5,5,7,7,9,9-decamethylpentasiloxane, triethylsiloxy-terminated polydiethylsiloxane, or any combination thereof.

[0024] The silicon precursor material may be sufficiently reactive with at least one co-reactant precursor material under chemical vapor deposition conditions to provide a silicon-containing film as a reaction product.

[0025] 1 is a flowchart of a method for depositing a silicon precursor on a substrate according to some embodiments of the present disclosure. As shown in FIG. 1, the method 100 can include, consist of, or consist essentially of one or more of the following steps: obtaining a silicon precursor material in step 102; obtaining at least one co-reactant precursor material in step 104; volatilizing the silicon precursor material to obtain a silicon precursor vapor in step 106; volatilizing the at least one co-reactant precursor material to obtain at least one co-reactant precursor vapor in step 108; and contacting the silicon precursor vapor and the at least one co-reactant precursor vapor with a substrate in step 110 under chemical vapor deposition conditions sufficient to form a silicon-containing film on the surface of the substrate.

[0026] Step 102 may include, consist of, or consist essentially of obtaining a silicon precursor material. The silicon precursor material may include, consist of, or consist essentially of any one or more of the silicon precursor materials disclosed herein. Obtaining may include obtaining a container or other vessel containing the silicon precursor material. In some embodiments, the silicon precursor material may be obtained in a container or other vessel in which the silicon precursor material can be vaporized.

[0027] Step 104 may include, consist of, or consist essentially of obtaining at least one co-reactant precursor material. The at least one co-reactant precursor material may be selected to obtain a desired silicon-containing film. In some embodiments, the desired silicon-containing film can include, consist of, or consist essentially of at least one of silicon nitride, silicon oxide, or any combination thereof. In some embodiments, the at least one co-reactant precursor material can include, consist of, or consist essentially of at least one of N2, H2, NH3, N2H4, CH3HNNH2, CH3HNNHCH3, NCH3H2, NCH3CH2H2, N(CH3)2H, N(CH3CH2)2H, N(CH3)3, N(CH3CH2)3, Si(CH3)2NH, pyrazoline, pyridine, ethylenediamine, radicals thereof, or any combination thereof. In some embodiments, the at least one co-reactant precursor material may include, consist of, or consist essentially of at least one of H, O, O, HO, HO, NO, NO, NO, CO, CO, a carboxylic acid, an alcohol, a diol, a radical thereof, or any combination thereof. Obtaining may include obtaining a container or other vessel containing the at least one co-reactant precursor material. In some embodiments, the at least one co-reactant precursor material may be obtained in a container or other vessel within which the at least one co-reactant precursor material can be vaporized.

[0028] Step 106 may include, consist of, or consist essentially of volatilizing the silicon precursor material to obtain a silicon precursor vapor. The volatilizing may include, consist of, or consist essentially of heating the silicon precursor material sufficient to obtain a silicon precursor vapor. In some embodiments, the volatilizing may include, consist of, or consist essentially of heating a container containing the silicon precursor material. In some embodiments, the volatilizing may include, consist of, or consist essentially of heating the silicon precursor material in a deposition chamber in which a chemical vapor deposition process is performed. In some embodiments, the volatilizing may include, consist of, or consist essentially of heating a conduit for delivering the silicon precursor material, the silicon precursor vapor, or any combination thereof, for example, to the deposition chamber. In some embodiments, the volatilizing may include, consist of, or consist essentially of operating a vapor delivery system containing the silicon precursor material. In some embodiments, volatilizing may include, consist of, or consist essentially of heating the silicon precursor material to a temperature sufficient to vaporize it and obtain a silicon precursor vapor. In some embodiments, volatilizing may include, consist of, or consist essentially of heating it to a temperature below the decomposition temperature of at least one of the silicon precursor material, the silicon precursor vapor, or any combination thereof. In some embodiments, the silicon precursor material may be in the gas phase, in which case step 106 is optional and not required. For example, the silicon precursor material may include, consist of, or consist essentially of a silicon precursor vapor.

[0029] Step 108 may include, consist of, or consist essentially of volatilizing at least one co-reactant precursor material to obtain at least one co-reactant precursor vapor. In some embodiments, the volatilizing may include, consist of, or consist essentially of heating the at least one co-reactant precursor material sufficient to obtain at least one co-reactant precursor vapor. In some embodiments, the volatilizing may include, consist of, or consist essentially of heating a container containing the at least one co-reactant precursor material. In some embodiments, the volatilizing may include, consist of, or consist essentially of heating the at least one co-reactant precursor material in a deposition chamber in which the chemical vapor deposition process is performed. In some embodiments, the volatilizing may include, consist of, or consist essentially of heating a conduit for delivering the at least one co-reactant precursor material, the at least one co-reactant precursor vapor, or any combination thereof, for example, to the deposition chamber. In some embodiments, volatilizing may include, consist of, or consist essentially of operating a vapor delivery system containing at least one co-reactant precursor material. In some embodiments, volatilizing may include, consist of, or consist essentially of heating at least one co-reactant precursor material to a temperature sufficient to vaporize it and obtain at least one co-reactant precursor vapor. In some embodiments, volatilizing may include, consist of, or consist essentially of heating to a temperature below the decomposition temperature of at least one of the at least one co-reactant precursor material, the at least one co-reactant precursor vapor, or any combination thereof. In some embodiments, at least one co-reactant precursor material may be in the vapor phase, in which case step 108 is optional and not required. For example, at least one co-reactant precursor material may include, consist of, or consist essentially of at least one co-reactant precursor vapor.

[0030] Step 110 may include, consist of, or consist essentially of contacting a silicon precursor vapor and at least one co-reactant precursor vapor with a substrate under chemical vapor deposition conditions sufficient to form a silicon-containing film on the surface of the substrate. The contacting may be performed in any system, apparatus, device, assembly, chamber thereof, or component thereof suitable for a chemical vapor deposition process (including, for example, but not limited to, a deposition chamber, among others). The silicon precursor vapor and at least one co-reactant precursor may be contacted with the substrate simultaneously. For example, each of the silicon precursor vapor, the at least one co-reactant precursor vapor, and the substrate may be present in the deposition chamber at the same time. Thus, the contacting may include contemporaneous or simultaneous contacting of the silicon precursor vapor and at least one co-reactant precursor vapor with the substrate.

[0031] This contemporaneous or simultaneous contacting of at least the silicon precursor vapor, at least one co-reactant precursor vapor, and the substrate distinguishes the chemical vapor deposition (CVD) process disclosed herein from atomic layer deposition (ALD) processes. In atomic layer deposition, the substrate is contacted with each vapor-phase precursor in an alternating sequence (e.g., in one or more cycles). For example, a first vapor-phase precursor can be contacted with the substrate in the chamber for a first period of time in the absence of any other vapor-phase precursors. Once the excess of the first vapor-phase precursor is removed from the chamber, a second vapor-phase precursor can be contacted with the substrate in the chamber for a second period of time in the absence of any other vapor-phase precursors. Additional vapor-phase precursors can be used, and this process can be repeated in one or more cycles or pulses. In the chemical vapor deposition process disclosed herein, both vapor-phase precursors can be contacted with the substrate simultaneously, and thus, unlike atomic layer deposition processes, are not contacted with the substrate in an alternating sequence. Thus, contacting does not have to include alternating contact of the silicon precursor vapor and at least one co-reactant precursor vapor with the substrate. For example, in some embodiments, the contacting does not include sequentially contacting each of the silicon precursor vapor and the at least one co-reactant precursor vapor with the substrate, hi some embodiments, the contacting does not include alternatingly sequentially contacting each of the silicon precursor vapor and the at least one co-reactant precursor vapor with the substrate.

[0032] The chemical vapor deposition conditions may include, consist of, or consist essentially of a deposition temperature. The deposition temperature may be a temperature below the thermal decomposition temperature of at least one of the silicon precursor vapor, the at least one co-reactant precursor vapor, or any combination thereof. The deposition temperature may be sufficiently high to reduce or avoid condensation of at least one of the silicon precursor vapor, the at least one co-reactant precursor vapor, or any combination thereof. In some embodiments, the substrate may be heated to the deposition temperature. In some embodiments, the chamber or other container in which the substrate is contacted with the silicon precursor vapor and the at least one co-reactant precursor vapor is heated to the deposition temperature. In some embodiments, at least one of the silicon precursor vapor, the at least one co-reactant precursor vapor, or any combination thereof may be heated to the deposition temperature.

[0033] The deposition temperature may be between 200° C. and 2500° C. In some embodiments, the deposition temperature may be between 500° C. and 700° C. For example, in some embodiments, the deposition temperature may be between 500° C. and 680° C., 500° C. and 660° C., 500° C. and 640° C., 500° C. and 620° C., 500° C. and 600° C., 500° C. and 580° C., 500° C. and 560° C., 500° C. and 540° C., 500° C. and 520° C., 520° C. and 700° C., 540° C. and 700° C., 560° C. and 700° C., 580° C. and 700° C., 600° C. and 700° C., 620° C. and 700° C., 640° C. and 700° C., 660° C. and 700° C., or 680° C. and 700° C. In other embodiments, the deposition temperature is greater than 200°C to 2500°C, such as, but not limited to, 400°C to 2000°C, 500°C to 2000°C, 550°C to 2400°C, 600°C to 2400°C, 625°C to 2400°C, 650°C to 2400°C, 675°C to 2400°C, 700°C to 2400°C, 725°C to 2400°C, 750°C to 2400°C, 77 5℃~2400℃, 800℃~2400℃, 825℃~2400℃, 850℃~2400℃, 875℃~2400℃, 900℃~2400℃, 925℃~2400℃, 950℃~2400℃, 975℃~2400℃, 1000℃~2400℃, 1025℃~2400℃, 1050℃~2400℃, 1075℃~2400℃, 1100℃~2400 °C, 1200°C~2400°C, 1300°C~2400°C, 1400°C~2400°C, 1500°C~2400°C, 1600°C~2400°C, 1700°C~2400°C, 1800°C~2400°C, 1900°C~2400°C, 2000°C~2400°C, 2100°C~2400°C, 2200°C~2400°C, 2300°C~2400°C, 500°C~2000 The temperature may be, for example, 500°C to 1900°C, 500°C to 1800°C, 500°C to 1700°C, 500°C to 1600°C, 500°C to 1500°C, 500°C to 1400°C, 500°C to 1300°C, 500°C to 1200°C, 500°C to 1100°C, 500°C to 1000°C, 500°C to 1000°C, 500°C to 900°C, or 500°C to 800°C.

[0034] The chemical vapor deposition conditions may include, consist of, or consist essentially of a deposition pressure. In some embodiments, the deposition pressure may include, consist of, or consist essentially of the vapor pressure of at least one of a silicon precursor vapor, at least one co-reactant precursor vapor, or any combination thereof. In some embodiments, the deposition pressure may include, consist of, or consist essentially of a chamber pressure.

[0035] The deposition pressure may be a pressure between 0.001 Torr and 100 Torr. For example, in some embodiments, the deposition pressure may be a pressure between 1 Torr and 30 Torr, 1 Torr and 25 Torr, 1 Torr and 20 Torr, 1 Torr and 15 Torr, 1 Torr and 10 Torr, 5 Torr and 50 Torr, 5 Torr and 40 Torr, 5 Torr and 30 Torr, 5 Torr and 20 Torr, or 5 Torr and 15 Torr. In other embodiments, the deposition pressure is between 1 Torr and 100 Torr, between 5 Torr and 100 Torr, between 10 Torr and 100 Torr, between 15 Torr and 100 Torr, between 20 Torr and 100 Torr, between 25 Torr and 100 Torr, between 30 Torr and 100 Torr, between 35 Torr and 100 Torr, between 40 Torr and 100 Torr, between 45 Torr and 100 Torr, between 50 Torr and 100 Torr, between 55 Torr and 100 Torr, between 60 Torr and 100 Torr, The pressure may be 0 Torr, 65 Torr to 100 Torr, 70 Torr to 100 Torr, 75 Torr to 100 Torr, 80 Torr to 100 Torr, 85 Torr to 100 Torr, 90 Torr to 100 Torr, 95 Torr to 100 Torr, 1 Torr to 95 Torr, 1 Torr to 90 Torr, 1 Torr to 85 Torr, 1 Torr to 80 Torr, 1 Torr to 75 Torr, or 1 Torr to 70 Torr. In other further embodiments, the deposition pressure may be a pressure between 1 mTorr and 100 mTorr, between 1 mTorr and 90 mTorr, between 1 mTorr and 80 mTorr, between 1 mTorr and 70 mTorr, between 1 mTorr and 60 mTorr, between 1 mTorr and 50 mTorr, between 1 mTorr and 40 mTorr, between 1 mTorr and 30 mTorr, between 1 mTorr and 20 mTorr, between 1 mTorr and 10 mTorr, between 100 mTorr and 300 mTorr, between 150 mTorr and 300 mTorr, between 200 mTorr and 300 mTorr, or between 150 mTorr and 250 mTorr, or between 150 mTorr and 225 mTorr.

[0036] The contacting may be sufficient to result in a deposition rate of 1 to 50 nm / min. For example, in some embodiments, the contacting may be sufficient to result in a deposition rate of 10-35 nm / min, 11-35 nm / min, 12-35 nm / min, 13-35 nm / min, 10-32 nm / min, 11-32 nm / min, 12-32 nm / min, 13-32 nm / min, 15-32 nm / min, 16-32 nm / min, 17-32 nm / min, 18-32 nm / min, 19-32 nm / min, 20-32 nm / min, 21-32 nm / min, 22-32 nm / min, 23-32 nm / min, 24-32 nm / min, 25-32 nm / min, 26-32 nm / min, 27-32 nm / min, 28-32 nm / min, 29-32 nm / min, or 30-32 nm / min. In some embodiments, the deposition rate can be based on one or more of deposition temperature and deposition pressure, among other chemical vapor deposition conditions. In some embodiments, the contacting can be sufficient to result in a deposition rate of 1 to 1500 nm / min, 1 to 1400 nm / min, 1 to 1300 nm / min, 1 to 1200 nm / min, 1 to 1100 nm / min, 1 to 1000 nm / min, 1 to 900 nm / min, 1 to 800 nm / min, 1 to 700 nm / min, 1 to 600 nm / min, 1 to 500 nm / min, 1 to 400 nm / min, 1 to 300 nm / min, 1 to 200 nm / min, or 1 to 100 nm / min.

[0037] The contacting may be sufficient to provide a step coverage of 10% to 80%. For example, in some embodiments, the contacting may be sufficient to provide a step coverage of 30% to 45%, 31% to 45%, 32% to 45%, 33% to 45%, 34% to 45%, 35% to 45%, 36% to 45%, 37% to 45%, 38% to 45%, 39% to 45%, or 40% to 45%. In some embodiments, the step coverage may be based on one or more of deposition temperature and deposition pressure, among other chemical vapor deposition conditions.

[0038] The contacting may be sufficient to result in a deposition rate that is 1.2 to 5 times greater than the silicon precursor material control, where the silicon precursor material control comprises tetraethoxysilane (TEOS). For example, in some embodiments, the contacting may be sufficient to result in a deposition rate that is 1.4 to 3 times greater than the silicon precursor material control, 1.5 to 3 times greater than the silicon precursor material control, 1.6 to 3 times greater than the silicon precursor material control, 1.7 to 3 times greater than the silicon precursor material control, 1.8 to 3 times greater than the silicon precursor material control, 1.9 to 3 times greater than the silicon precursor material control, 2 to 3 times greater than the silicon precursor material control, 2.1 to 3 times greater than the silicon precursor material control, 2.2 to 3 times greater than the silicon precursor material control, 2.3 to 3 times greater than the silicon precursor material control, 2.4 to 3 times greater than the silicon precursor material control, 2.5 to 3 times greater than the silicon precursor material control, or 2.6 to 3 times greater than the silicon precursor material control. In some embodiments, the deposition rate can be based on one or more of the deposition temperature and deposition pressure, among other chemical vapor deposition conditions.

[0039] The contacting can be sufficient to result in a wet etching rate of 1 to 20 nm / min. For example, in some embodiments, the contacting can be sufficient to result in a wet etching rate of 1 to 19 nm / min, 1 to 18 nm / min, 1 to 17 nm / min, 1 to 16 nm / min, 1 to 15 nm / min, 1 to 14 nm / min, 1 to 13 nm / min, 1 to 12 nm / min, 1 to 11 nm / min, 1 to 10 nm / min, 1 to 9 nm / min, 1 to 8 nm / min, 1 to 7 nm / min, 1 to 6 nm / min, 1 to 5 nm / min, 1 to 4 nm / min, 2 to 20 nm / min, 3 to 20 nm / min, 4 to 5 nm / min, 5 to 6 nm / min, 6 to 7 nm / min, 7 to 8 nm / min, 8 to 9 nm / min, 9 to 10 nm / min, 10 to 12 nm / min, 1 ... The etching rate may be sufficient to result in a wet etch rate of 4-20 nm / min, 5-20 nm / min, 6-20 nm / min, 7-20 nm / min, 8-20 nm / min, 9-20 nm / min, 10-20 nm / min, 11-20 nm / min, 12-20 nm / min, 13-20 nm / min, 14-20 nm / min, 15-20 nm / min, 16-20 nm / min, 17-20 nm / min, or 18-20 nm / min. In some embodiments, the wet etch rate is based on thermal oxidation in 100:1 HF.

[0040] The contacting may be sufficient to result in a thermal shrinkage of less than 10%. For example, in some embodiments, the contacting may be sufficient to result in a thermal shrinkage of 0.1% to 10%, 0.1% to 5%, 0.1% to 5%, 0.1% to 4.8%, 0.1% to 4.6%, 0.1% to 4.4%, 0.1% to 4.2%, 0.1% to 4%, 0.1% to 3.8%, 0.1% to 3.6%, 0.1% to 3.4%, 0.1% to 3.2%, 0.1% to 3%, 0.1% to It may be sufficient to result in a thermal shrinkage of 2.8%, 0.1% to 2.6%, 0.1% to 2.4%, 0.1% to 2.2%, 0.1% to 2%, 0.1% to 1.8%, 0.1% to 1.6%, 0.1% to 1.4%, 0.1% to 1.2%, 0.1% to 1%, 0.1% to 0.8%, 0.1% to 0.6%, 0.1% to 0.5%, or 0.1% to 0.4%.

[0041] The substrate may include, consist of, or consist essentially of at least one of Si, Co, Cu, Al, W, WN, WC, TiN, Mo, MoC, SiO2, W, SiN, WCN, Al2O3, AlN, ZrO2, La2O3, TaN, RuO2, IrO2, Nb2O3, YO3, hafnium oxide, or any combination thereof. In some embodiments, the substrate may include other silicon-based substrates, such as, for example, one or more of a polysilicon substrate, a metal substrate, and a dielectric substrate.

[0042] Some embodiments relate to silicon-containing films, such as silicon-containing films prepared according to the method of FIG.

[0043] Figure 2 is a schematic illustration of a silicon-containing article according to some embodiments of the present disclosure. As shown in Figure 2, the silicon-containing article 200 can include, consist of, or consist essentially of a substrate 202 and a silicon-containing film 204. In the illustrated embodiment, the silicon-containing article 200 includes the silicon-containing film 204 on at least a portion of the substrate 202. [Example]

[0044] Example 1 Silicon Precursor Materials A non-limiting example of a silicon precursor material is bis(diethylamino)-1,1,3,3-tetramethyldisiloxane (BDEA-TMDSO), the chemical structure of which is shown below: TIFF0007804754000001.tif43170

[0045] Example 2 Silicon Precursor Materials A non-limiting example of a silicon precursor material is 1,3-bis(isopropylamino)tetramethyldisiloxane (BIPA-TMDSO), the chemical structure of which is shown below: TIFF0007804754000002.tif28170

[0046] Example 3 Silicon Precursor Materials A non-limiting example of a silicon precursor material is hexachlorodisiloxane (HCDSO), the chemical structure of which is shown below: TIFF0007804754000003.tif29170

[0047] Example 4 Silicon Precursor Materials A non-limiting example of a silicon precursor material is hexamethyldisiloxane (HMDSO), the chemical structure of which is shown below: TIFF0007804754000004.tif27170

[0048] Example 5 Deposition rate Several chemical vapor deposition processes were performed using a control precursor material, tetraethoxysilane (TEOS), and silicon precursor materials, including BDEA-TMDSO. The deposition rates of BDEA-TMDSO and TEOS were measured at 560 °C and 650 °C, respectively. As shown in Figure 3, the deposition rate of BDEA-TMDSO was 2.5 times faster than that of TEOS at 650 °C and 2.8 times faster than that of TEOS at 560 °C.

[0049] Example 6 Silicon Precursor Materials Chemical vapor deposition processes were performed using the silicon precursor materials of Examples 1-4. For comparison, tetraethoxysilane (TEOS) was used as a control precursor material. All precursor materials were deposited at deposition temperatures between 550°C and 650°C and pressures of 3.5 Torr. The deposition rates and step coverages are summarized in Table 1 below. TIFF0007804754000005.tif27170

[0050] Based on the data in Table 1, the deposition rate of the silicon precursor material was up to 4.2 times greater than that of the control precursor material. Additionally, the step coverage of the silicon precursor material was up to 1.4 times greater than that of the control precursor material.

Claims

1. 1. A method for depositing a silicon precursor material on a substrate, comprising: obtaining a silicon precursor material comprising at least one siloxane bond; obtaining at least one co-reactant precursor material comprising at least one of O2, O3, H2O, H2O2, NO, N2O, NO2, CO, CO2, a carboxylic acid, an alcohol, a diol, a radical thereof, or any combination thereof; volatilizing a silicon precursor material to obtain a silicon precursor vapor; volatilizing at least one co-reactant precursor material to obtain at least one co-reactant precursor vapor; contacting a silicon precursor vapor and at least one co-reactant precursor vapor with a substrate under chemical vapor deposition conditions sufficient to form a silicon-containing film on the surface of the substrate; Including, The method, wherein the contacting is sufficient to result in a deposition rate that is 2.5 to 3 times faster than the deposition rate of a silicon precursor material control, and the silicon precursor material control comprises tetraethoxysilane (TEOS).

2. 1. The silicon precursor material has the formula: (A) １ A ２ A ３ )Si-O-Si(B １ B ２ B ３ ) (In the formula, A １ , A ２ , A ３ , B １ , B ２ , and B ３ each is independently hydrogen, halide, alkyl, cycloalkyl, alkoxy, amino, alkylamino, aminoalkyl, ethynyl, phenyl, allyl, vinyl, or acetoxy.

10. The method of claim 1, comprising the compound of formula:

3. 10. The method of claim 1, wherein the silicon precursor material comprises at least one of bis(diethylamino)-1,1,3,3-tetramethyldisiloxane (BDEA-TMDSO), 1,3-bis(isopropylamino)tetramethyldisiloxane (BIPA-TMDSO), or any combination thereof.

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