Prober, probe position correction method, probe position correction program, and semiconductor device manufacturing method

Abstract

To provide a prober capable of accurately and stably bringing a probe needle into contact with a semiconductor chip without measuring a temperature.SOLUTION: A prober 100 generates first tip position data of a probe needle 121 at a predetermined time interval during a successive inspection of a semiconductor chip for constructing a transition pattern DB and further generates transition pattern data by arraying the generated first tip position data in time series. The prober 100 generates a transition pattern data group obtained by changing a preset temperature of a wafer chuck for each of transition pattern data. While semiconductor chips are newly successively inspected, the prober 100 then identifies, from a transition pattern data group, transition pattern data including a portion most similar to sub transition data, which are obtained by arraying second tip position data of the probe needle 121 in every predetermined timing in time series, and corrects a relative position based on the identified transition pattern data.SELECTED DRAWING: Figure 7

Description

[Technical Field]

[0001] The present invention relates to a prober, a probe position correction method, a probe position correction program, and a method for manufacturing a semiconductor device. [Background technology]

[0002] A large number of semiconductor chips formed on the surface of a semiconductor wafer are inspected by a prober. The prober has the function of moving a wafer chuck that holds the semiconductor wafer and a probe card equipped with probe needles relative to each other, and bringing the probe needles into contact with the electrode pads of the semiconductor chips. A tester that works in conjunction with this prober measures the distance between the probes that have contacted the electrode pads. needle Electrical testing of semiconductor chips is performed via this.

[0003] The semiconductor chips to be inspected are used in a wide range of applications, and some are used in a wide temperature range from -40°C to +125°C. Therefore, inspection of semiconductor chips may be performed at room temperature (normal temperature), high temperatures, and low temperatures. In such cases, once the temperature of the wafer chuck is controlled and within a specified temperature range, the temperature of the semiconductor wafer held on the wafer chuck is also considered to be within the specified inspection temperature range, and inspection begins.

[0004] When starting testing, the prober first detects the relative position between the tip of the probe needle and the electrode pad of the semiconductor chip, and then corrects the position of the tip of the probe needle to a reference position where the tip of the probe needle can come into contact with the center of the electrode pad based on this relative position.

[0005] However, in high-temperature or low-temperature testing, as the testing of multiple semiconductor chips proceeds, the temperature of each part of the prober other than the wafer chuck gradually changes to approach the temperature of the wafer chuck. This causes each part, including the probe needle, to deform due to expansion caused by heating or contraction caused by cooling, changing the relative position between the tip of the probe needle and the electrode pad of the semiconductor chip. This can result in a "probing error," in which the tip of the probe needle does not properly contact the electrode pad of the semiconductor chip.

[0006] Specifically, in testing at high or low temperatures, if the three-dimensional coordinates representing the position of the tip of the probe needle are (X, Y, Z), then positional displacement occurs in each of (X, Y, Z) due to the expansion or contraction of the probe needle, the deflection of the resin substrate holding the probe needle, etc. This can lead to, for example, erroneous judgment of the test results, deterioration of the long-term reliability of the semiconductor chip due to the probe contacting a location other than the electrode pad, damage to the electrode pad due to excessive probe pressure, and poor connection in wire bonding induced by this damage. To avoid this, it is conceivable to wait until the expansion or contraction in each part subsides before starting the inspection, but this would result in a decrease in productivity.

[0007] In order to prevent such probing errors, a method has been proposed for correcting the relative position between the probe needle and the semiconductor chip during wafer testing. As an example, a prober has been disclosed in which a displacement amount data generating unit corrects the relative position detected based on the measurement results of a temperature sensor attached to a probe card (see Patent Document 1). As another example, a prober has been disclosed that calculates the amount of change in relative position based on a prediction model obtained from the measurement results of temperature sensors placed at multiple locations and information on the relative positions between the electrode pads and the probe, and corrects the relative position (see, for example, Patent Documents 2 and 3). [Prior art documents] [Patent documents]

[0008] [Patent Document 1] Japanese Patent Application Laid-Open No. 2006-173206 [Patent Document 2] Japanese Patent Application Laid-Open No. 2007-311389 [Patent Document 3] Japanese Patent Application Laid-Open No. 2018-117095 Summary of the Invention [Problem to be solved by the invention]

[0009] However, due to the prober's mechanism, it is difficult to install a temperature sensor near the semiconductor chip being tested, and it is necessary to install it in multiple locations to ensure measurement accuracy. In this regard, when replacing a temperature sensor, it can be difficult to correct the relative position if the installation position is shifted before and after the replacement, or if there are individual differences in the temperature sensor. Furthermore, if there are multiple temperature sensors, correction becomes even more difficult.

[0010] An object of one aspect of the present invention is to provide a prober that can bring a probe needle into accurate and stable contact with a semiconductor chip without measuring the temperature. [Means for solving the problem]

[0011] The prober according to one embodiment of the present invention comprises: a probe card having probe needles that are brought into contact with semiconductor chips formed on the surface of a semiconductor wafer; a wafer chuck that can hold the semiconductor wafer and heat or cool it to a predetermined set temperature; a first image acquisition device that acquires a first image including the tip of the probe needle; a second image acquisition device that acquires a second image including the electrode pads of the semiconductor chip; a stage that moves the wafer chuck holding the semiconductor wafer relative to the probe needles based on the relative positions of the tips of the probe needles and the electrode pads obtained from the first image and the second image, and brings the probe needles into sequential contact with the electrode pads; A prober having: a data generating unit that generates first tip position data indicating positions of the tips of the probe needles at predetermined time intervals while the semiconductor chips are being sequentially inspected, and that arranges the generated first tip position data in time series to further generate transition pattern data; a data group constructing unit that constructs a transition pattern data group obtained by changing the set temperature of the wafer chuck for each of the transition pattern data; a pattern specifying unit that specifies, from the group of transition pattern data, the transition pattern data including a portion that is most similar to partial transition data in which second tip position data indicating the position of the tip of the probe needle at each predetermined timing is arranged in time series while newly sequentially testing the semiconductor chips; a correction unit that corrects the relative position based on the transition pattern data identified by the pattern identification unit; It has. [Effects of the Invention]

[0012] According to one aspect of the present invention, it is possible to provide a prober that can bring a probe needle into accurate and stable contact with a semiconductor chip without measuring the temperature. [Brief explanation of the drawings]

[0013] [Figure 1] FIG. 1 is a schematic side view showing the configuration of a prober according to this embodiment. [Figure 2] FIG. 2 is a block diagram showing the hardware configuration of the prober in this embodiment. [Figure 3] FIG. 3 is a block diagram showing the functional configuration of the prober in this embodiment. [Figure 4] FIG. 4 is a flowchart showing the flow of processing for pre-constructing a transition pattern DB in this embodiment. [Figure 5] FIG. 5 is an explanatory diagram showing an example of a transition pattern when the relative position between the tip of the probe needle and the electrode pad gradually shifts. [Figure 6]FIG. 6 is an explanatory diagram showing an example of the configuration of the transition pattern DB. [Figure 7] FIG. 7 is a flowchart showing the flow of processing for correcting the relative position between the tip of the probe and the semiconductor chip in this embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0014] Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and redundant explanations may be omitted. The drawings are schematic, and the ratios of width, length, and depth are not as shown in the drawings. In the drawings, the X-axis, Y-axis, and Z-axis are perpendicular to one another. The direction including the +X-axis direction and the direction opposite to the +X-axis direction (-X-axis direction) is referred to as the "X-axis direction," the direction including the +Y-axis direction and the direction opposite to the +Y-axis direction (-Y-axis direction) is referred to as the "Y-axis direction," and the direction including the +Z-axis direction and the direction opposite to the +Z-axis direction (-Z-axis direction) is referred to as the "Z-axis direction" (height direction, thickness direction). Furthermore, a plane including the X-axis and Y-axis is called the "XY plane," a plane including the X-axis and Z-axis is called the "XZ plane," and a plane including the Y-axis and Z-axis is called the "YZ plane."

[0015] The prober according to one embodiment of the present invention is an apparatus that executes the probe position correction program according to one embodiment of the present invention, thereby implementing the probe position correction method according to one embodiment of the present invention. Therefore, the description of the probe position correction program and the probe position correction method according to one embodiment of the present invention will be replaced by a description of the operation of the prober according to one embodiment of the present invention. Furthermore, the method for manufacturing a semiconductor device according to one embodiment of the present invention includes a step of inspecting a semiconductor chip using the prober according to one embodiment of the present invention, and is a method for manufacturing a semiconductor device by encapsulating the inspected semiconductor chip with resin, etc. Therefore, in the method for manufacturing a semiconductor device according to one embodiment of the present invention, the explanation of the step of inspecting a semiconductor chip is replaced with the explanation of the operation of the prober according to one embodiment of the present invention, and the explanation of the step of encapsulating the inspected semiconductor chip is omitted because it is sufficient to use a general step.

[0016] FIG. 1 is a schematic side view showing the configuration of a prober according to this embodiment. As shown in FIG. 1, the prober 100 in this embodiment is an apparatus for inspecting the electrical characteristics of each of a plurality of semiconductor chips formed on a semiconductor wafer W, and has the function of sequentially contacting the electrode pads of the semiconductor chips with probe needles 121 connected to a tester (not shown). The prober 100 includes a test head 110 , a probe card 120 , a wafer chuck 130 , and a stage 140 .

[0017] The test head 110 is a signal connection mechanism with the tester, and mechanically holds the probe card 120 .

[0018] The probe card 120 is equipped with probe needles 121 that are brought into contact with semiconductor chips formed on the surface of the semiconductor wafer W. The probe card 120 is provided with connection terminals (not shown) that are electrically connected to the probe needles 121, and these connection terminals are connected to the test head 110. A tester connected to the test head 110 by a cable or the like supplies various test signals to the electrode pads of the semiconductor chip via the connection terminals and the probe needles 121, and receives output signals from other electrode pads of the semiconductor chip, thereby inspecting whether the semiconductor chip operates normally.

[0019] The wafer chuck 130 is fixed onto a stage 140 and can hold the semiconductor wafer W by various holding methods such as vacuum suction. Furthermore, the wafer chuck 130 can heat or cool the semiconductor wafer W to a predetermined set temperature using, for example, a heater mechanism, a chiller mechanism, a heat pump mechanism, or the like.

[0020] Based on a control signal from a stage control unit 151b (described later), the stage 140 moves in the X-axis direction, the Y-axis direction, and the Z-axis direction in a predetermined space within the housing of the prober 100. The stage 140 can also rotate about its central axis in the Z-axis direction, thereby correcting so-called θ deviation. This allows the stage 140 to relatively move the semiconductor wafer W held on the wafer chuck 130 and the probe needles 121. Furthermore, by moving the stage 140 in the Z-axis direction, the probe needles 121 can be brought into contact sequentially with the semiconductor chips on the surface of the semiconductor wafer W held on the wafer chuck 130.

[0021] As will be described later, the prober 100 can detect the positions of the tips of the probe needles 121 and the electrode pads of the semiconductor wafer W using the cameras 160a and 160b, respectively, to determine their relative positions. As a result, before inspecting the semiconductor chips, the stage 140 performs initial position correction by moving to a reference position where the tips of the probe needles 121 can come into contact near the centers of the electrode pads based on the determined relative positions. The reference position may be a position corresponding to a predetermined set temperature. When inspecting the semiconductor chips sequentially, the stage 140 moves the wafer chuck 130 holding the semiconductor wafer W relative to the probe needles 121 based on position data of the semiconductor chips on the semiconductor wafer W, and sequentially brings the probe needles 121 into contact with the semiconductor chips on the surface of the semiconductor wafer W. When the stage 140 brings the probe needles 121 into contact with the semiconductor chips, the stage 140 inspects the semiconductor chips in conjunction with the tester.

[0022] In this way, the prober 100 controls the temperature of the wafer chuck 130 and the operation of the stage 140, and in conjunction with the tester, can inspect the electrical characteristics of multiple semiconductor chips formed on the semiconductor wafer W at a predetermined set temperature.

[0023] FIG. 2 is a block diagram showing the hardware configuration of the prober in this embodiment. As shown in FIG. 2, the prober 100 further includes a prober control device 150, a camera 160a as a first image acquisition device, and a camera 160b as a second image acquisition device.

[0024] The prober control device 150 includes a processor 151 , a RAM (Random Access Memory) 152 , a ROM (Read Only Memory) 153 , a HDD (Hard Disk Drive) 154 , and a communication interface 155 .

[0025] The processor 151 is a CPU (Central Processing Unit) or the like, and executes an OS (Operating System) and various programs stored in the ROM 153 and HDD 154 to realize various functions. The processor 151 is used to control the overall operation of the prober 100 , and performs various controls and calculations to execute a probe position correction program 153 a stored in the ROM 153 .

[0026] The RAM 152 functions as a work area in which various programs such as a probe position correction program are developed when the processor 151 executes them.

[0027] The ROM 153 stores various programs such as a probe position correction program 153a, a BIOS (Basic Input / Output System), and the like.

[0028] The HDD 154 is a storage device that stores various programs, various data, etc. The various data includes image data, tip position data, probe mark data, etc., as will be described later. The HDD 154 also includes a transition pattern DB 154a, which is a database of transition pattern data, which is a series of position data of the tips of the probe needles 121 arranged in time series. In the following, the "database of transition pattern data" may be referred to as a "transition pattern data group," and the "database" may be referred to as a "DB." Furthermore, in this embodiment, the HDD 154 is provided with the transition pattern DB 154a, but the present invention is not limited to this and may be replaced with, for example, a solid state drive, a magnetic tape, a portable storage device, a storage device on a network, etc. Examples of portable storage devices include a CD (Compact Disc) drive and a USB (Universal Serial Bus) memory.

[0029] The communication interface 155 transmits various control signals from the processor 151 to the wafer chuck 130, the stage 140, and the cameras 160a and 160b, respectively. The communication interface 155 also receives signals from the wafer chuck 130, the stage 140, and the cameras 160a and 160b, respectively, and outputs the signals to the processor 151.

[0030] Camera 160a acquires an image (first image) including the tip of probe needle 121 based on a control signal from image acquisition unit 151c in order to confirm the position of the tip of probe needle 121 before and during inspection of the semiconductor chip. In this embodiment, the camera 160a is fixed to the housing of the prober 100, and when the stage 140 moves to the origin position, it captures an image of the tip of one of the multiple probe needles, 121, but this is not limited to this.

[0031] Before inspecting the semiconductor chip, the camera 160b acquires an image (second image) including the electrode pads of the semiconductor chip based on a control signal from the image acquisition unit 151c described later in order to confirm the positions of the electrode pads of the semiconductor chip. Furthermore, during inspection of the semiconductor chip, the camera 160b acquires an image that further includes probe marks caused by the probe needles 121 coming into contact with the electrode pads of the semiconductor chip, based on a control signal from the image acquisition unit 151c. In this embodiment, the camera 160a is fixed to the housing of the prober 100, and when the stage 140 moves to the origin position, it acquires an image of the electrode pads of one of the multiple semiconductor chips, but this is not limited to this.

[0032] FIG. 3 is a block diagram showing the functional configuration of the prober in this embodiment. As shown in FIG. 3, the processor 151 has, as its functions, a wafer chuck control unit 151a, a stage control unit 151b, an image acquisition unit 151c, a data generation unit 151d, a data group construction unit 151e, a pattern identification unit 151f, and a correction unit 151g.

[0033] The wafer chuck control unit 151a transmits to the wafer chuck 130 a control signal for holding the semiconductor wafer W or a control signal for adjusting the temperature to a set temperature.

[0034] The stage control unit 151b transmits to the stage 140 control signals for moving in each axial direction or for rotating.

[0035] The image acquisition unit 151c transmits a control signal to the camera 160a to acquire an image including the tip of the probe needle before inspecting the semiconductor chip and at predetermined time intervals while the semiconductor chips are being inspected one after another. Furthermore, image acquisition unit 151c transmits to camera 160b, at predetermined time intervals while sequentially inspecting semiconductor chips, a control signal for acquiring images of probe marks caused by probe needles 121 that come into contact with the semiconductor chips. The image acquisition unit 151c then associates the acquired image data with the data on the date and time when the image was acquired and stores the data in a data table in the HDD 154.

[0036] The data generating unit 151d generates various data as follows from the images acquired by the cameras 160a and 160b by the image acquiring unit 151c.

[0037] Before testing the semiconductor chip, the data generating unit 151d generates pad position data for the electrode pads by image processing an image including the electrode pads. The data generating unit 151d also generates "tip position data" indicating the position of the tip of the probe needle 121 by image processing an image including the tip of the probe needle. As a result, before semiconductor chip testing, the relative positions of the probe needle tips and the electrode pads can be determined from the pad position data of the electrode pads and the tip position data of the probe needles 121. Based on the determined relative positions, the stage control unit 151b moves the stage 140 to move the wafer chuck 130 holding the semiconductor wafer W to a reference position where the tips of the probe needles 121 can come into contact with the centers of the electrode pads, thereby correcting the initial position. In addition, the stage control unit 151b moves the stage 140 to move the wafer chuck 130 holding the semiconductor wafer W relative to the probe needles 121, thereby bringing the probe needles 121 into sequential contact with the electrode pads.

[0038] Furthermore, the data generating unit 151d generates probe mark data from an image including a probe mark, and further generates tip position data (first tip position data) of the probe needle 121 from the probe mark data. Then, the data generating unit 151d arranges the first tip position data together with the probe mark data in time series to generate transition pattern data.

[0039] Specifically, the data generating unit 151d processes the image including the probe mark to determine the position coordinates (X, Y) of the center of the probe mark, with the center of the electrode pad's outline set as the reference coordinates (0, 0) on the XY plane. That is, the position coordinates (X, Y) of the center of the probe mark correspond to the position coordinates (X, Y) of the tip of the probe needle 121. Furthermore, the data generating unit 151d obtains the size (area) of the probe mark digitized by image processing such as counting the number of dots in the image. Next, the data generating unit 151d obtains the position coordinate (Z) of the tip of the probe needle 121 by referring to a comparison data table showing the position (height) of the tip of the probe needle 121 in the Z-axis direction relative to the obtained size of the probe mark.

[0040] In this way, the data generation unit 151d generates first tip position data (X, Y, Z) that estimates the position of the tip of the probe needle 121 from the image of the probe mark acquired by the image acquisition unit 151c using image processing and a comparison data table.

[0041] Next, the data generating unit 151d associates the first tip position data (X, Y, Z) with the probe mark data, data on the date and time when the image was acquired, and data on the set temperature of the wafer chuck 130. Then, the data generating unit 151d arranges the first tip position data in chronological order along with the series of probe mark data in a data table on the HDD 154, and generates transition pattern data by adding difference data from the first tip position data generated first in the chronological order to each subsequent data. When the positive and negative coordinates of this difference data are reversed, it becomes a correction value that returns the position of the tip of the probe needle 121 to the initial position correction position. In this embodiment, the first tip position data generated first in time series is used as the reference for the difference data, but this is not limitative, and the reference coordinates (0,0) may be used as the reference for the difference data.

[0042] In addition, the data generating unit 151d generates a transition pattern DB 154a by 130With the temperature set to a predetermined set temperature, the probe mark data, first tip position data, and difference data obtained when semiconductor chips are sequentially inspected in advance within a predetermined cumulative inspection time are arranged in chronological order to generate transition pattern data.

[0043] The data group constructing unit 151e constructs a transition pattern data group obtained by changing the set temperature of the wafer chuck 130 for each transition pattern data as a transition pattern DB 154a, and stores the data group in the HDD 154 in advance. Specifically, the data group constructing unit 151e stores a transition pattern data group as shown in FIG.

[0044] After the data group construction unit 151e constructs the transition pattern DB 154a, when new semiconductor chips are being inspected sequentially, the data generation unit 151d generates second tip position data from images including the tip of the probe needle 121 acquired at predetermined timings, and generates partial transition data in which the generated second tip position data is arranged in chronological order. The pattern specifying unit 151f specifies, from the group of transition pattern data, transition pattern data that includes a portion that is most similar to the partial transition data generated by the data generating unit 151d.

[0045] When a new semiconductor chip is being sequentially inspected, the correction unit 151g automatically corrects the relative position of the semiconductor chip with respect to the probe needles 121 based on the transition pattern data identified by the pattern identification unit 151f. Specifically, the correction unit 151g uses the difference data of the transition pattern data as a correction value and causes the stage control unit 151b to transmit a control signal for moving in each axial direction.

[0046] Next, a process for storing a plurality of transition pattern data to construct a transition pattern DB will be described in detail with reference to the flowchart shown in FIG. 4 and to FIGS.

[0047] FIG. 4 is a flowchart showing the flow of processing for pre-constructing a transition pattern DB in this embodiment. As shown in FIG. 4, first, to acquire the transition pattern data, the wafer chuck control unit 151a causes the wafer chuck 130 to hold the semiconductor wafer W and controls the chiller mechanism of the wafer chuck 130 to maintain the set temperature of −40° C. (step S01).

[0048] Next, image acquisition unit 151c causes cameras 160a and 160b to acquire images of the tips of probe needles 121 and the electrode pads of the semiconductor chip, respectively. Data generation unit 151d determines the relative positions of the tips of probe needles 121 and the electrode pads of the semiconductor chip from the images acquired by cameras 160a and 160b. Based on this relative position, stage control unit 151b corrects the position of stage 140 to a reference position where the tips of probe needles 121 can come into contact with the vicinity of the center of electrode pad P (step S02).

[0049] Next, based on the position data of the semiconductor chip, stage control unit 151b moves stage 140 to the position of the semiconductor chip to be first inspected (step S03), and then raises stage 140 to bring probe needles 121 into contact with electrode pads P of the semiconductor chip. At this timing, the tester inspects the semiconductor chip (step S04).

[0050] It should be noted that the angle at which the tip of the probe needle 121 contacts the electrode pad of the semiconductor chip is preferably within a predetermined angle range relative to the normal direction of the electrode pad, rather than contacting it in the normal direction to the electrode pad, because this is less likely to cause serious damage to the electrode pad and the area of ​​the probe mark is likely to change depending on the height of the tip. Furthermore, the shape of the probe needle 121 is preferably bent, since this makes the probe needle 121 more elastic when the tip of the probe needle 121 is brought into contact with the electrode pad at a predetermined angle relative to the normal direction of the electrode pad. The range of the predetermined angle is not particularly limited and can be appropriately selected depending on the purpose, but is preferably between 0° and 45°.

[0051] Next, the prober control device 150 determines whether a predetermined time interval has elapsed since the first inspection started or since the last image of the probe mark was acquired (step S05). If the prober control device 150 determines that the predetermined time interval has not elapsed, the stage control unit 151b moves the stage 140 to the position of the semiconductor chip to be next inspected based on the position data of the semiconductor chip (step S06), and raises the stage 140 to bring the probe needles 121 into contact with the electrode pads of the semiconductor chip. At this timing, the tester inspects the semiconductor chip (return to step S04). If the prober control device 150 determines that a predetermined time interval has elapsed, the image acquisition unit 151c acquires an image including the probe mark M made on the electrode pad that was last inspected and brought into contact with the probe needle 121 (step S07).

[0052] Regarding the operation of image acquisition unit 151c in step S07, as shown in Fig. 5, image acquisition unit 151c repeatedly acquires images including probe mark M at predetermined time intervals T. Fig. 5 shows a case where, as the inspection time increases, the position of the tip of probe needle 121 gradually moves to the positive side in each of the X-axis coordinate, Y-axis coordinate, and Z-axis coordinate. Also, Figs. 5(a) to 5(c) show different viewpoints for the tip of probe needle 121, and correspond vertically in the figures.

[0053] Next, the data generating unit 151d generates probe mark data and first tip position data from the image acquired by the image acquiring unit 151c. Then, the data generating unit 151d associates the probe mark data and the first tip position data with data on the date and time when the image was acquired and data on the set temperature of the wafer chuck 130, and stores them in a data table in the HDD 154 (step S08).

[0054] Next, the prober control device 150 determines whether a predetermined cumulative inspection time has elapsed since the initial start of inspection (step S09). If the prober control device 150 determines that the predetermined cumulative inspection time has not elapsed, the stage control unit 151b moves the stage 140 to the position of the semiconductor chip to be inspected next based on the position data of the semiconductor chip (step S06), and raises the stage 140 to bring the probe needles 121 into contact with the electrode pads P of the semiconductor chip. At this timing, the tester inspects the semiconductor chip (return to step S04). When the prober control device 150 determines that a predetermined cumulative inspection time has elapsed, the data generating unit 151d arranges the first tip position data together with a series of probe mark data in a data table on the HDD 154 in chronological order, and generates transition pattern data by adding difference data from the first tip position data generated first in chronological order to each of the subsequent data. The data group constructing unit 151e stores the transition pattern data generated by the data generating unit 151d in the transition pattern DB 154a on the HDD 154 (step S10).

[0055] In this way, the data group constructing unit 151e stores the transition pattern data obtained by changing the set temperature of the wafer chuck for each transition pattern data in the HDD 154, and constructs the transition pattern DB 154a. Specifically, as shown in FIG. 6, the data group constructing unit 151e converts a series of probe mark data into one piece of transition pattern data, and stores the transition pattern data in a group in the transition pattern DB.

[0056] Next, the process of correcting the position of the tip of the probe needle in a new test using the constructed transition pattern DB will be described with reference to the flowchart shown in FIG. 7 and to FIGS.

[0057] FIG. 7 is a flowchart showing the flow of processing for correcting the relative position between the tip of the probe and the semiconductor chip in this embodiment. 7 are the same as steps S01 to S06 in Fig. 4. Therefore, in a new inspection, the wafer chuck 130 is controlled to a predetermined set temperature to start the inspection of the semiconductor chip, and after a predetermined time interval, a description of the process up to storing some first tip position data from an image including a probe mark in a data table on HDD 154 will be omitted. The following description will begin with the content of step S11, which is the subsequent process.

[0058] If prober control device 150 determines in step S05 that the predetermined time interval has elapsed, image acquisition unit 151c acquires an image including the tips of probe needles 121 (step S11). Then, data generation unit 151d generates second tip position data indicating the positions of the tips of probe needles 121 by image processing from the image including the tips of probe needles 121. Then, data generation unit 151d associates the second tip position data with data on the date and time when the image was acquired and data on the set temperature of wafer chuck 130, and stores the data in a data table in HDD 154 (step S12).

[0059] Next, the pattern identification unit 151f determines whether or not transition pattern data including a portion most similar to the second tip position data arranged in chronological order up to the present time exists in the transition pattern data group in the transition pattern DB 154a (step S13).

[0060] Specifically, the similarity determination performed by the pattern identification unit 151f is performed by comparing differential data of the probe mark data, and if the similarity is, for example, 70% or more, it is determined to be similar. However, at the beginning of a new test, the relative positional deviation between the tip of the probe needle and the semiconductor chip is small, and the number of second tip position data is small, so that there is a large amount of transition pattern data that is determined to include a portion with high similarity. For this reason, in this embodiment, if the number of transition pattern data that is determined to include a similar portion is equal to or greater than a predetermined number, the pattern identification unit 151f determines that there is no transition pattern data that includes a similar portion. In this embodiment, if the number of transition pattern data determined to contain similar parts is equal to or greater than a predetermined number, it is determined that there is no transition pattern data containing similar parts. However, this is not limited to this, and for example, the process may not proceed to step S13 unless the number of second tip position data in a new test is equal to or greater than a predetermined number of data.

[0061] If the pattern specifying unit 151f determines in step S13 that similar transition pattern data does not exist, the stage control unit 151b moves the stage 140 to the position of the next semiconductor chip to be inspected (step S06), and raises the stage 140 to bring the probe needles 121 into contact with the electrode pads of the semiconductor chip. At this timing, the tester inspects the semiconductor chip (return to step S04).

[0062] Furthermore, when the pattern identification unit 151f determines that similar transition pattern data exists, if there is only one similar transition pattern data, the pattern identification unit 151f identifies that transition pattern data.If there are multiple similar transition pattern data, the pattern identification unit 151f identifies the transition pattern data with the highest similarity among the multiple transition pattern data.

[0063] Next, the correction unit 151 g The pattern specifying unit 151f corrects the relative positions of the probe tips and the semiconductor chip by rewriting the position data of the semiconductor chip for the next inspection and thereafter based on the transition pattern data specified by the pattern specifying unit 151f (step S14). Then, returning to step S06, based on the corrected position information of the semiconductor chip for the next test and thereafter, the stage control unit 151b moves the stage 140 to the position of the semiconductor chip to be tested next, raises the stage 140 to bring the probe needles 121 into contact with the electrode pads P of the semiconductor chip, and the tester repeats the process of testing the semiconductor chip (returning to step S04).

[0064] As described above, in order to construct a transition pattern DB, the prober 100 of this embodiment generates first tip position data of the probe needles 121 at predetermined time intervals while sequentially testing semiconductor chips for a predetermined cumulative testing time, and further generates transition pattern data by chronologically arranging the generated first tip position data. The prober 100 constructs a group of transition pattern data obtained by changing the set temperature of the wafer chuck for each transition pattern data. Then, while sequentially testing new semiconductor chips, the prober 100 identifies, from the group of transition pattern data, transition pattern data including a portion most similar to partial transition data obtained by chronologically arranging second tip position data of the probe needles 121 at predetermined timings, and corrects the relative position based on the identified transition pattern data. This allows the prober 100 to bring the probe needles 121 into accurate and stable contact with the semiconductor chip without measuring the temperature.

[0065] In this embodiment, when constructing the transition pattern data group, probe mark data is generated from images including probe marks acquired at predetermined time intervals, and first tip position data is further generated from the probe mark data. However, this is not limited to this. For example, if the main cause of the probe needle not being able to accurately and stably contact the electrode pad is expansion or contraction of the probe needle or bending of the resin substrate holding the probe needle, the first tip position data may be generated from an image including the tip of the probe needle. In other words, generating first tip position data from an image including a probe mark involves correcting not only the expansion or contraction of parts related to the probe needle, but also factors including the expansion or contraction of other parts.

[0066] In addition, in this embodiment, while new semiconductor chips are successively inspected, the second tip position data is generated from an image including the tip of the probe needle acquired at a predetermined timing, but this is not limited to this. For example, probe mark data may be generated from an image including the probe mark acquired at a predetermined timing, and second tip position data may be further generated from the probe mark data.

[0067] Furthermore, in this embodiment, the probe position correction program is stored in ROM, but it may be stored in a HDD, or it does not necessarily have to be stored in the prober from the beginning. The probe position correction program may be stored in, for example, another information processing device communicably connected to the prober via the Internet, and the prober may acquire and execute the probe position correction program from such a device. Alternatively, the probe position correction program may be stored in, for example, a computer-readable recording medium, and the prober may acquire and execute the probe position correction program from the recording medium. [Explanation of symbols]

[0068] 100 Prober 110 Test Head 120 probe card 121 Probe needle 130 Wafer chuck 140 stages 150 Prober control device 151 processors 151a wafer chuck control unit 151b Stage control unit 151c Image acquisition unit 151d Data Generation Section 151e Data Group Construction Department 151f Pattern identification section 151g correction section 152 RAM 153 ROM 153a Probe position correction program 154 HDD 154a Transition Pattern DB (Transition Pattern Data Group) 155 Communication Interface 160a camera (first image acquisition device) 160b Camera (second image acquisition device) P electrode pad W semiconductor wafer

Claims

1. a probe card having probe needles that are brought into contact with semiconductor chips formed on the surface of a semiconductor wafer; a wafer chuck that can hold the semiconductor wafer and heat or cool it to a predetermined set temperature; a first image acquisition device that acquires a first image including the tip of the probe needle; a second image acquisition device that acquires a second image including the electrode pads of the semiconductor chip; a stage that moves the wafer chuck holding the semiconductor wafer relative to the probe needles based on the relative positions of the tips of the probe needles and the electrode pads obtained from the first image and the second image, and brings the probe needles into sequential contact with the electrode pads; A prober having: an image acquisition unit that transmits control signals to the first image acquisition device and the second image acquisition device and acquires the first image and the second image; a data generating unit that generates first tip position data indicating positions of the tips of the probe needles at predetermined time intervals while the semiconductor chips are being sequentially inspected, and that arranges the generated first tip position data in time series to further generate transition pattern data; a data group constructing unit that constructs a transition pattern data group obtained by changing the set temperature of the wafer chuck for each of the transition pattern data; a pattern specifying unit that specifies, from the group of transition pattern data, the transition pattern data including a portion that is most similar to partial transition data in which second tip position data indicating the position of the tip of the probe needle at each predetermined timing is arranged in time series while newly sequentially testing the semiconductor chips; a correction unit that corrects the relative position based on the transition pattern data identified by the pattern identification unit; A prober comprising:

2. When constructing the transition pattern data group, the image acquisition unit acquires the second image, which further includes a probe mark caused by contact of the probe needle with the electrode pad, by the second image acquisition device at the predetermined time interval; The prober according to claim 1 , wherein the data generating section generates probe mark data from the second image that further includes the probe mark, and further generates the first tip position data from the probe mark data.

3. When constructing the transition pattern data group, the image acquisition unit acquires the first image including the tip of the probe needle by the first image acquisition device at the predetermined time interval; The prober according to claim 1 , wherein the data generating section generates the first tip position data from the first image.

4. When the semiconductor chips are sequentially inspected, the image acquisition unit acquires the first image including the tip of the probe needle by the first image acquisition device at each predetermined timing; 4. The prober according to claim 1, wherein the data generating section generates the first tip position data from the first image.

5. When the semiconductor chips are newly inspected in sequence, the image acquisition unit acquires the second image, which further includes a probe mark caused by contact of the probe needle with the electrode pad, by the second image acquisition device at each predetermined timing; 4. The prober according to claim 1, wherein the data generating section generates probe mark data from the second image that further includes the probe mark, and further generates the first tip position data from the probe mark data.

6. 6. The prober according to claim 1, wherein the tip of the probe needle is brought into contact with the electrode pad at a predetermined angle with respect to a normal direction of the electrode pad.

7. 7. The prober according to claim 1, wherein the probe needles are bent.

8. 8. A method for manufacturing a semiconductor device, comprising the step of inspecting using the prober according to claim 1.

9. a probe card having probe needles that are brought into contact with semiconductor chips formed on the surface of a semiconductor wafer; a wafer chuck that can hold the semiconductor wafer and heat or cool it to a predetermined set temperature; a first image acquisition device that acquires a first image including the tip of the probe needle; a second image acquisition device that acquires a second image including the electrode pads of the semiconductor chip; a stage that moves the wafer chuck holding the semiconductor wafer relative to the probe needles based on the relative positions of the tips of the probe needles and the electrode pads obtained from the first image and the second image, and brings the probe needles into sequential contact with the electrode pads; A probe position correction method using a prober having generating first tip position data indicating the position of the tip of the probe needle at a predetermined time interval while sequentially testing the semiconductor chips, and arranging the generated first tip position data in a time series to further generate transition pattern data; constructing a group of transition pattern data obtained by changing the set temperature of the wafer chuck for each of the transition pattern data; While newly sequentially testing the semiconductor chips, the transition pattern data including a portion most similar to partial transition data in which second tip position data indicating the position of the tip of the probe needle at each predetermined timing is arranged in time series is identified from the transition pattern data group; correcting the relative position based on the identified transition pattern data; A probe position correction method comprising:

10. a probe card having probe needles that are brought into contact with semiconductor chips formed on the surface of a semiconductor wafer; a wafer chuck that can hold the semiconductor wafer and heat or cool it to a predetermined set temperature; a first image acquisition device that acquires a first image including the tip of the probe needle; a second image acquisition device that acquires a second image including the electrode pads of the semiconductor chip; a stage that moves the wafer chuck holding the semiconductor wafer relative to the probe needles based on the relative positions of the tips of the probe needles and the electrode pads obtained from the first image and the second image, and brings the probe needles into sequential contact with the electrode pads; A probe position correction program using a prober having On the computer, generating first tip position data indicating the position of the tip of the probe needle at a predetermined time interval while sequentially testing the semiconductor chips, and arranging the generated first tip position data in a time series to further generate transition pattern data; constructing a group of transition pattern data obtained by changing the set temperature of the wafer chuck for each of the transition pattern data; While newly sequentially testing the semiconductor chips, the transition pattern data including a portion most similar to partial transition data in which second tip position data indicating the position of the tip of the probe needle at each predetermined timing is arranged in time series is identified from the transition pattern data group; correcting the relative position based on the identified transition pattern data; A probe position correction program comprising:

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