Method for manufacturing a stretchable semiconductor device

Abstract

To provide a semiconductor device with elasticity that can reduce an influence of expansion and contraction on a semiconductor element to stabilize characteristics of the semiconductor element.SOLUTION: A semiconductor device comprises: an elastic resin substrate 2 which includes an acrylic adhesive composition with adhesiveness; a plurality of non-elastic resin substrates 3 which are arranged side by side in a plane of the elastic resin substrate 2; and a plurality of semiconductor elements 4 which are arranged on respective planes of the plurality of non-elastic resin substrates 3, wherein the elastic resin substrate 2 has adjacent non-elastic resin substrates of the plurality of non-elastic resin substrates 3 made to freely expand and contract.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a semiconductor device having elasticity. Place Regarding the manufacturing method. [Background technology]

[0002] For example, there are semiconductor devices with stretchability (see, for example, Patent Documents 1 and 2 below). Such stretchable semiconductor devices are necessary for driving electronic devices such as organic electroluminescence (EL) displays that can be deformed into three-dimensional shapes such as spherical or free-form surfaces, and pressure-sensitive sensors.

[0003] Specifically, Patent Document 1 below discloses a stretchable semiconductor element comprising a flexible substrate having a support surface and a semiconductor structure having a curved inner surface, at least a portion of the curved inner surface being bonded to the support surface of the flexible substrate.

[0004] Furthermore, Patent Document 2 below discloses a stretchable device in which one or more semiconductor elements are formed on a resin substrate, and a semiconductor-mounted substrate configured by covering the semiconductor elements with an inner sealing layer is embedded in one or more stretchable resin films made of elastomer, a conductive circuit connected to the semiconductor elements is formed in the stretchable resin film, and the periphery of the semiconductor-mounted substrate is covered with an outer sealing layer. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2007-281406 [Patent Document 2] Japanese Patent Application Laid-Open No. 2015-149364 Summary of the Invention [Problem to be solved by the invention]

[0006] In the above-described stretchable semiconductor device, a semiconductor element such as a thin film transistor (TFT) is formed on a stretchable substrate. However, in conventional semiconductor devices, when the substrate is stretched, peeling easily occurs between the substrate (stretchable portion) and the semiconductor element (non-stretchable portion), which can cause instability in the characteristics of the semiconductor element.

[0007] The present invention has been proposed in view of the above-mentioned conventional circumstances, and makes it possible to reduce the influence of expansion and contraction on semiconductor elements and stabilize the characteristics of the semiconductor elements. Half An object of the present invention is to provide a method for manufacturing a semiconductor device having stretchability suitable for manufacturing semiconductor devices. [Means for solving the problem]

[0008] In order to achieve the above object, the present invention provides the following means: 。 [ 1 forming a non-elastic resin substrate on a first support substrate; forming a plurality of semiconductor elements on the non-elastic resin substrate; a step of attaching a second support substrate onto the plurality of semiconductor elements via an adhesive layer; peeling off the first support substrate; cutting the non-elastic resin base material into a plurality of non-elastic resin substrates surrounding each of the semiconductor elements; removing a marginal portion of the non-elastic resin base material other than the plurality of non-elastic resin substrates; a step of attaching the stretchable resin substrate onto the plurality of non-stretchable resin substrates; and peeling off the second support substrate. [ 2 forming an adhesive layer on the non-elastic resin base material cut into the plurality of non-elastic resin substrates; a step of removing a marginal portion of the non-elastic resin base material on which the adhesive layer is formed, other than the plurality of non-elastic resin substrates, together with the adhesive layer on the surface thereof; and a step of attaching the elastic resin substrate onto the plurality of non-elastic resin substrates via the adhesive layer. 1

[0023] A method for producing a semiconductor device having stretchability according to the present invention. [3] The method for manufacturing a stretchable semiconductor device according to [2], wherein an inorganic oxide film is used as the adhesive layer. [4] The method for manufacturing a stretchable semiconductor device according to any one of [1] to [3], wherein the stretchable resin substrate contains an acrylic adhesive composition having adhesive properties. [5] A method for manufacturing a stretchable semiconductor device according to any one of [1] to [4], characterized in that a protective layer having a Young's modulus of 2 GPa or more is formed on the non-stretchable resin substrate so as to cover at least a part of the semiconductor element. [Effects of the Invention]

[0009] As described above, according to the present invention, it is possible to reduce the influence of expansion and contraction on semiconductor elements and stabilize the characteristics of the semiconductor elements. Half It is possible to provide a method for manufacturing a semiconductor device having stretchability suitable for manufacturing a semiconductor device. [Brief explanation of the drawings]

[0010] [Figure 1] 1 is a perspective view showing a configuration of a semiconductor device according to an embodiment of the present invention; [Figure 2] 2 is an enlarged cross-sectional view of a main part of the semiconductor device taken along line AA shown in FIG. [Figure 3] 3 is a cross-sectional view showing a configuration in which a protective layer is provided in the semiconductor device shown in FIG. 2. FIG. [Figure 4] 2A to 2C are cross-sectional views for sequentially explaining the manufacturing process of the semiconductor device shown in FIG. [Figure 5] 2A to 2C are cross-sectional views for sequentially explaining the manufacturing process of the semiconductor device shown in FIG. [Figure 6] 2A to 2C are cross-sectional views for sequentially explaining the manufacturing process of the semiconductor device shown in FIG. [Figure 7] 2A to 2C are cross-sectional views for sequentially explaining the manufacturing process of the semiconductor device shown in FIG. [Figure 8] 2A to 2C are cross-sectional views for sequentially explaining the manufacturing process of the semiconductor device shown in FIG. [Figure 9] 2A to 2C are cross-sectional views for sequentially explaining the manufacturing process of the semiconductor device shown in FIG. [Figure 10] 2A to 2C are cross-sectional views for sequentially explaining the manufacturing process of the semiconductor device shown in FIG. [Figure 11] 2A to 2C are cross-sectional views for sequentially explaining the manufacturing process of the semiconductor device shown in FIG. [Figure 12] 2A to 2C are cross-sectional views for sequentially explaining the manufacturing process of the semiconductor device shown in FIG. [Figure 13] 10 is a graph showing the results of measuring the characteristics of a semiconductor device in an example. DETAILED DESCRIPTION OF THE INVENTION

[0011] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the drawings used in the following description, characteristic portions may be enlarged for convenience in order to make the features easier to understand, and the dimensional ratios of each component may not be the same as in reality. Furthermore, the materials, dimensions, etc. exemplified in the following description are merely examples, and the present invention is not necessarily limited to them, and can be implemented with appropriate changes within the scope of the present invention.

[0012] (Semiconductor Devices) First, as one embodiment of the present invention, a semiconductor device 1 having stretchability as shown in, for example, FIGS. 1 to 3 will be described. Fig. 1 is a perspective view showing the configuration of the semiconductor device 1. Fig. 2 is an enlarged cross-sectional view of a main part of the semiconductor device 1 taken along line AA shown in Fig. 1. Fig. 3 is a cross-sectional view showing the configuration of the semiconductor device 1 in which a protective layer is provided.

[0013] As shown in Figures 1 and 2, the semiconductor device 1 of this embodiment comprises an elastic resin substrate 2, a plurality of non-elastic resin substrates 3 arranged in a line within the plane of the elastic resin substrate 2, and a plurality of semiconductor elements 4 arranged on each surface of the non-elastic resin substrate 3.

[0014] In the semiconductor device 1 of this embodiment, a configuration in which thin film transistors (hereinafter referred to as "TFTs 4") are arranged as the semiconductor elements 4 in a matrix on the surface of the stretchable resin substrate 2 is exemplified.

[0015] The semiconductor device 1 of this embodiment is suitable for use as a driving TFT for displays such as a liquid crystal display panel, an organic electroluminescence (EL) display panel, etc. This makes it possible to realize a stretchable display that can be freely stretched and contracted, and to form a display that can be deformed into a three-dimensional shape such as a spherical surface or a free-form surface.

[0016] The stretchable resin substrate 2 is a film substrate containing an acrylic adhesive composition having adhesive properties, and among these, it is preferable to use an acrylic resin which has excellent transparency, weather resistance, and heat resistance, and has excellent conformability to uneven surfaces and excellent adhesive strength and holding power for curved surfaces.

[0017] For example, the stretchable resin substrate 2 can be made of an adhesive acrylic polymer containing 50% by mass or more of a monomer having an acryloyl group and a methacryloyl group as an adhesive acrylic adhesive composition. The stretchable resin substrate 2 may also be made of a tackifying resin, such as a rosin-based tackifying resin, a terpene-based tackifying resin, or an epoxy-based tackifying resin. The resin material constituting the film substrate of the stretchable resin substrate 2 is a resin with a tensile elongation of 100% or more, such as an acrylic resin, a silicone resin, or a styrene-butadiene resin. The thickness of the stretchable resin substrate 2 is preferably 0.005 to 1.5 mm, and more preferably 0.05 to 1 mm.

[0018] The adhesive strength of the stretchable resin substrate 2 is preferably, for example, 5 N / 2 mm or more, more preferably 7 N / 20 mm or more, in terms of 180° peel adhesive strength measured in accordance with "JIS Z 0237." The level of adhesive strength of the stretchable resin substrate 2 is a necessary element for preventing peeling from and integrating with the non-stretchable resin substrate 3, and there is no particular upper limit to the adhesive strength.

[0019] In order to improve the life span and durability of the stretchable resin substrate 2, it is preferable that the stretchable resin substrate 2 has the ability to return to its original shape after being stretched. Specifically, the restoration rate after being stretched 100% is preferably 70% or more, and more preferably 85% or more. If the restoration rate is low, it becomes difficult to obtain durability. It is known that the restoration rate can be adjusted by the degree of crosslinking and average molecular weight of the acrylic polymer, and it can be adjusted by this method.

[0020] The multiple non-stretchable resin substrates 3 are film substrates made of flexible resin (plastic), and are arranged in a matrix pattern within the surface of the stretchable resin substrate 2. Each non-stretchable resin substrate 3 is attached to one surface (front surface) of the stretchable resin substrate 2 by the adhesive force of the stretchable resin substrate 2.

[0021] For example, polyimide (PI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polycarbonate (PC), nanocellulose, etc. can be used for the non-elastic resin substrate 3. Among these, it is preferable to use PI, which has excellent heat resistance and chemical resistance against thermal baking and chemical treatment required when forming the TFT 4. The thickness of the non-elastic resin substrate 3 is preferably 0.1 to 100 μm, and more preferably 1 to 10 μm.

[0022] Furthermore, the non-stretchable resin substrate 3 is preferably attached to the stretchable resin substrate 2 via an adhesive layer 5. The adhesive layer 5 is a layer for improving adhesion between the stretchable resin substrate that will be the stretchable portion and the non-stretchable resin substrate 3 that will be the non-stretchable portion, and is formed on the surface of the non-stretchable resin substrate 3 that faces the stretchable resin substrate 2.

[0023] The adhesive layer 5 is made of, for example, a silicon oxide (SiO2) film or a silicon nitride (SiN x The adhesive layer 5 preferably has a thickness of 10 to 20 nm, more preferably 5 to 200 nm.

[0024] The TFT 4 has, on a non-elastic resin substrate 3, a semiconductor layer 6, a gate electrode 7 arranged so as to intersect with the semiconductor layer 6, an insulating layer 8 arranged between the semiconductor layer 6 and the gate electrode 7, and a source electrode 9 and a drain electrode 10 arranged on either side of the gate electrode 7 of the semiconductor layer 6.

[0025] The TFT 4 of this embodiment has a bottom-gate structure in which the semiconductor layer 6 is provided on the insulating layer 8 that covers the gate electrode 7. On the other hand, the TFT 4 may have a top-gate structure in which the gate electrode 7 is provided on the insulating layer 8 that covers the semiconductor layer 6.

[0026] The semiconductor layer 6 is disposed on the insulating layer 8 that overlaps the gate electrode 7 in a plan view, and forms an active layer in which a channel is formed. For the semiconductor layer 6, for example, an oxide semiconductor containing at least indium, tin, zinc, and oxygen (In-Sn-Zn-O) as main components, or an oxide semiconductor containing at least indium, gallium, zinc, and oxygen (In-Ga-Zn-O) can be used.

[0027] The gate electrode 7 is disposed on the non-elastic resin substrate 3. The gate electrode 7 may be made of a metal such as titanium (Ti), chromium (Cr), aluminum (Al), molybdenum (Mo), gold (Au), silver (Ag), copper (Cu), or an alloy thereof, or a conductive film formed by laminating two or more of these metals.

[0028] The insulating layer 8 is provided to insulate the semiconductor layer 6 from the gate electrode 7 and to apply a voltage to the semiconductor layer 6 via the gate electrode 7. The insulating layer 8 is made of, for example, silicon nitride (SiN x ) film, an inorganic oxide film such as silicon oxide (SiO2), or a laminated film of these can be used.

[0029] The source electrode 9 and the drain electrode 10 are disposed continuously on the semiconductor layer 6 and the insulating layer 8, respectively. The source electrode 9 and the drain electrode 10 can be made of, for example, a metal such as titanium (Ti), chromium (Cr), aluminum (Al), molybdenum (Mo), gold (Au), silver (Ag), copper (Cu), or an alloy thereof, or a conductive film in which two or more of these metals are stacked.

[0030] Furthermore, the TFT 4 may be configured to be disposed on the non-stretchable resin substrate 3 via an underlayer (not shown) in order to improve adhesion to the non-stretchable resin substrate 3 and to enhance the barrier properties of the non-stretchable resin substrate 3. The underlayer may be the same as those exemplified for the insulating layer 8 described above.

[0031] A stretchable wiring layer 11 is provided on the surface of the stretchable resin substrate 2. The wiring layer 11 is provided corresponding to each of the gate electrode 7, the source electrode 9, and the drain electrode 10, and is electrically connected to the TFT 4.

[0032] The wiring layer 11 can be made of a stretchable conductive layer, such as one made by dispersing carbon nanotubes or metal nanowires in an elastic elastomer to give it conductivity, or one made by bending metal wiring such as gold into an accordion-like shape.

[0033] 3, the semiconductor device 1 of this embodiment may have a configuration in which a protective layer 12 that covers at least a part of the TFT 4 is provided on the non-stretchable resin substrate 3. The protective layer 12 has the effect of suppressing distortion of the TFT 4 formed on the non-stretchable resin substrate 3 and stabilizing the characteristics of the TFT 4.

[0034] The protective layer 12 can be made of an organic film such as an epoxy resin, an olefin resin, an acrylic resin, or a polyimide resin. Among these, a photoreactive epoxy resin is preferred, as it can be made thicker than 1 μm and can be patterned by light. Specifically, a negative photoresist material such as SU-8 can be used. The thickness of the protective layer 12 is preferably 0.1 to 5 μm, and more preferably 1 to 2 μm.

[0035] In the semiconductor device 1 of this embodiment having the above-described configuration, the stretchable resin substrate 2 is stretchable between adjacent ones of the plurality of non-stretchable resin substrates 3. In the semiconductor device 1 of this embodiment, each non-stretchable resin substrate 3 is firmly attached to the stretchable resin substrate 2 by the adhesive force of the stretchable resin substrate 2 described above.

[0036] As a result, in the semiconductor device 1 of this embodiment, when the stretchable resin substrate 2 is stretched, it is possible to prevent peeling between the stretchable resin substrate 2, which is the stretchable portion, and the non-stretchable resin substrate 3, which is the non-stretchable portion. In addition, since the TFT 4 is provided on the non-stretchable resin substrate 3, which is the non-stretchable portion, it is possible to reduce the influence of stretching caused by the stretchable resin substrate 2.

[0037] Therefore, in the semiconductor device 1 of this embodiment, it is possible to reduce the influence of the expansion and contraction of the stretchable resin substrate 2 on the TFT 4 and stabilize the characteristics of the TFT 4.

[0038] (Method of manufacturing a semiconductor device) Next, a method for manufacturing the semiconductor device 1 will be described with reference to FIGS. 4 to 12 are cross-sectional views for explaining the manufacturing process of the semiconductor device 1 in order.

[0039] 4, a non-stretchable resin base material 30 that will become the plurality of non-stretchable resin substrates 3 is formed on a first support substrate 21. Specifically, a glass substrate is used as the first support substrate 21, and a coating liquid containing PI that will become the non-stretchable resin substrates 3 is applied onto the first support substrate 21 by spin coating to form a coating film, and then the coating film is dried to form the non-stretchable resin base material 30 made of a PI film.

[0040] 5, a plurality of semiconductor elements TFT4 are formed on the non-elastic resin substrate 30. Specifically, a gate electrode 7, an insulating layer 8, a semiconductor layer 6, a source electrode 9, and a drain electrode 10 are formed in this order on the non-elastic resin substrate 30 using a normal semiconductor manufacturing process.

[0041] Furthermore, a protective layer 12 is formed as needed. Specifically, a negative photoresist material, SU-8, is applied to the TFT 4 by spin coating, and then exposed to light through a photomask and developed to form the protective layer 12. This protective layer 12 can be made thicker than 1 μm, has excellent chemical stability, and has a Young's modulus of 2 GPa or more, making it effective in suppressing distortion of the TFT 4.

[0042] 6, a second support substrate 22 is attached onto the plurality of TFTs 4 via an adhesive layer S. Specifically, a glass substrate is used for the second support substrate 22, and a fix film is used for the adhesive layer S, and the second support substrate 22 is attached onto the plurality of TFTs 4 via the adhesive layer S.

[0043] 7, the first support substrate 21 is peeled off. Specifically, using laser lift-off, laser light is irradiated from the first support substrate 21 side to ablate the interface between the non-stretchable resin substrate 30 and the first support substrate 21, thereby removing the first support substrate 21 peeled off from the non-stretchable resin substrate 30.

[0044] 8, the non-stretchable resin substrate 30 is cut into a plurality of non-stretchable resin substrates 3 surrounding each TFT 4. Specifically, the non-stretchable resin substrate 30 is irradiated with laser light, and the periphery of the portion of the non-stretchable resin substrate 30 that will become the non-stretchable resin substrate 3 is cut by laser processing.

[0045] Next, as shown in Fig. 9, an adhesion layer 5 is formed on the non-elastic resin base material 30 cut into a plurality of non-elastic resin substrates 3. Specifically, the adhesion layer 5 made of an SiO2 film is formed on the non-elastic resin base material 30 using a sputtering method. The SiO2 film can also be formed by applying a silane coupling agent or the like.

[0046] Next, as shown in FIG. 10, the marginal portion of the non-stretchable resin base material 30 on which the adhesive layer 5 has been formed, other than the plurality of non-stretchable resin substrates 3, is removed.

[0047] Here, since the periphery of the portion of the non-stretchable resin base material 30 that will become the multiple non-stretchable resin substrates 3 has been cut in advance, it is possible to leave these multiple non-stretchable resin substrates 3 and remove the excess portion other than the multiple non-stretchable resin substrates 3 together with the adhesive layer 5 on that surface in a die-cut manner.

[0048] 11, the stretchable resin substrate 2 is attached onto the plurality of non-stretchable resin substrates 3 via the adhesive layer 5. Specifically, the stretchable resin substrate 2 made of an acrylic adhesive film is heated and pressed onto the adhesive layer 5 on the plurality of non-stretchable resin substrates 3, whereby the stretchable resin substrate 2 is attached by the adhesive force of the acrylic adhesive film.

[0049] 12, the second support substrate 22 is peeled off. Specifically, the peeled second support substrate 22 is removed together with the adhesive layer S from above the plurality of TFTs 4. By going through the above steps, the semiconductor device 1 can be manufactured.

[0050] In the manufacturing method of the semiconductor device 1 of this embodiment, the adhesive strength of the above-mentioned stretchable resin substrate 2 allows it to be firmly attached to multiple non-stretchable resin substrates 3, so when the stretchable resin substrate 2 is stretched or contracted, it is possible to stabilize the characteristics of this semiconductor device 1 while preventing peeling between the stretchable resin substrate 2 that forms the stretchable portion and the non-stretchable resin substrate 3 that forms the non-stretchable portion.

[0051] Moreover, the method for manufacturing the semiconductor device 1 of this embodiment makes it possible to manufacture the semiconductor device 1 having such stretchability with a good yield.

[0052] The present invention is not necessarily limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention. For example, the semiconductor device 1 described above is configured to have a TFT 4 as a semiconductor element, but the semiconductor device to which the present invention is applied is not necessarily limited to such a configuration, and can be an electronic device that has semiconductor elements such as a light-receiving element, a strain sensor, or a pressure sensor. [Example]

[0053] The effects of the present invention will be made clearer by the following examples. Note that the present invention is not limited to the following examples and can be practiced with appropriate modifications within the scope of the present invention.

[0054] In this example, a PI film was first formed on a glass substrate, which served as the first support substrate, as a non-stretchable substrate. To form the PI film, a polyimide varnish (manufactured by Ube Industries, Ltd.) was spin-coated onto the substrate, followed by heat treatment at 400°C for 1 hour in a nitrogen atmosphere. This resulted in a PI film with a thickness of approximately 15 μm.

[0055] Next, 30 x 30 TFTs were formed in a matrix on the PI film. Specifically, a gate electrode made of a molybdenum alloy film was formed using a sputtering system. A 200 nm thick insulating layer made of SiO2 was then formed on top of the gate electrode by thermal oxidation of silicon. A 20 nm thick semiconductor layer made of an In-Sn-Zn-O (ITZO) film was then formed on top of the insulating layer using a sputtering system with an In-Sn-Zn-O (ITZO) target and a mixed gas of argon and oxygen flowing through the chamber. This was then heat-treated at 300°C for 1 hour in an air atmosphere using a hot plate. Source and drain electrodes made of a molybdenum alloy film were then formed on top of the semiconductor layer using a sputtering system. This resulted in a TFT with a bottom-gate / top-contact structure. The channel length of this TFT was 100 μm and the channel width was 500 μm.

[0056] Next, a negative resist material, SU-8 (manufactured by MicroChem), is applied onto the glass substrate by spin coating, and then exposed and developed through a photomask to form a protective layer corresponding to the shape of the TFT.

[0057] Next, a glass substrate, which serves as a second support substrate, is attached onto the multiple TFTs via a fix film, which serves as an adhesive layer, and then laser light is irradiated to remove the glass substrate that has peeled off from the PI film.

[0058] Next, the PI film is irradiated with laser light, and the area surrounding the non-elastic resin substrate is cut by laser processing.

[0059] Next, an adhesion layer made of SiO2 film is formed on the PI film using the sputtering method.

[0060] Next, the PI film is removed in a die-cutting manner, leaving behind the plurality of non-stretchable resin substrates, and the marginal portions other than the plurality of non-stretchable resin substrates together with the SiO2 film on the surface.

[0061] Next, a stretchable resin substrate made of an acrylic adhesive film is heat-pressed onto the adhesive layers on the plurality of non-stretchable resin substrates, whereby the stretchable resin substrate is attached by the adhesive force of the acrylic adhesive film.

[0062] Next, the glass substrate that has peeled off together with the adhesive layer is removed from above the plurality of TFTs. Through the above steps, a stretchable semiconductor device was fabricated.

[0063] For this stretchable semiconductor device, we measured the change in TFT characteristics (gate voltage-drain current characteristics) relative to the elongation rate (%) of the stretchable resin substrate when the stretchable resin substrate was stretched. The measurement results are shown in Figure 13.

[0064] In this measurement, the extension rate when stretching both ends of the stretchable resin substrate in the direction away from each other was changed in 10% increments within the range of 0 to 50%, and measurements were taken at each extension rate, and also after stretching.

[0065] As shown in Figure 13, in each measurement, the gate voltage rises from a state of almost 0. In addition, almost no hysteresis is observed, indicating good characteristics.

[0066] Furthermore, although not shown in FIG. 13, when similar measurements were repeated, the variations were extremely small and good characteristics were obtained in all cases, confirming excellent reproducibility.

[0067] Furthermore, the stability of the TFT characteristics when stretched was also confirmed to be the same excellent characteristics when the stretch rate was 0% as when the stretch rate was 50%.

[0068] In the semiconductor device of this example, the mobility is 30.0 cm 2 / Vs, and the ratio of Ion / Ioff is 10 7 As a result, good results were obtained.

[0069] In the semiconductor device of this embodiment, the adhesive strength of the above-mentioned stretchable resin substrate allows multiple stretchable resin substrates to be firmly attached to the stretchable resin substrate, so when the stretchable resin substrate is stretched or contracted, it is possible to stabilize the characteristics of this semiconductor device 1 while preventing peeling between the stretchable resin substrate that forms the stretchable portion and the non-stretchable resin substrate that forms the non-stretchable portion. [Explanation of symbols]

[0070] REFERENCE SIGNS LIST 1... semiconductor device 2... stretchable resin substrate 3... non-stretchable resin substrate 4... semiconductor element (TFT) 5... adhesion layer 6... semiconductor layer 7... gate electrode 8... insulating layer 9... source electrode 10... drain electrode 11... wiring layer 12... protective layer 21... first support substrate 22... second support substrate 30... non-stretchable resin base material S... adhesive layer

Claims

1. forming a non-elastic resin substrate on a first support substrate; forming a plurality of semiconductor elements on the non-elastic resin substrate; a step of attaching a second support substrate onto the plurality of semiconductor elements via an adhesive layer; peeling off the first support substrate; cutting the non-elastic resin base material into a plurality of non-elastic resin substrates surrounding each of the semiconductor elements; removing a marginal portion of the non-elastic resin base material other than the plurality of non-elastic resin substrates; a step of attaching a stretchable resin substrate onto the plurality of non-stretchable resin substrates; and peeling off the second support substrate.

2. forming an adhesive layer on the non-elastic resin base material cut into the plurality of non-elastic resin substrates; a step of removing a marginal portion of the non-elastic resin base material on which the adhesive layer is formed, other than the plurality of non-elastic resin substrates, together with the adhesive layer thereon; 2. The method for manufacturing a stretchable semiconductor device according to claim 1, further comprising the step of attaching the stretchable resin substrate onto the plurality of non-stretchable resin substrates via the adhesive layer.

3. A method for manufacturing a stretchable semiconductor device as described in Claim 2, characterized in that an inorganic oxide film is used as the adhesion layer.

4. A method for manufacturing a stretchable semiconductor device described in any one of claims 1 to 3, characterized in that the stretchable resin substrate contains an acrylic adhesive composition having adhesive properties.

5. A method for manufacturing an elastic semiconductor device described in any one of claims 1 to 4, characterized in that a protective layer having a Young's modulus of 2 GPa or more is formed on the non-elastic resin substrate so as to cover at least a portion of the semiconductor element.

Images