Power Cycle Test Equipment

Abstract

To solve the problems that connection change of a wire made to correspond to test items requires a long time and a large test device is required for a work space for the connection change.SOLUTION: A conduction plate 204 and a switch circuit 124 are attached to a switch circuit board 201. The plurality of switch circuit boards 201 are disposed in parallel to each other, and the conduction plate 204 of each switch circuit board 201 has a portion protruding from the switch circuit board 201. A wire 211 is connected to an element terminal 226 of a transistor 117 to be tested and a portion of the conduction plate 204 protruding from the selected switch circuit board 201. When the switch circuit 124 of the selected switch circuit board 201 is turned on, test current of a power source device 132 is supplied to the transistor 117 to be tested and a power cycle test is conducted.SELECTED DRAWING: Figure 9

Description

[Technical Field]

[0001] The present invention relates to an electric element testing apparatus and an electric element testing method for performing power cycle tests on semiconductor elements such as SiC, IGBT, MOS-FET, GaN-FET, and bipolar transistor.

[0002] A semiconductor element testing device and a semiconductor element testing method are provided that can efficiently reproduce stresses similar to failure modes in the environment in which semiconductor elements are used and can evaluate power semiconductor elements and the like with high reliability. [Background technology]

[0003] The lifespan of a power semiconductor element can be attributed to thermal fatigue caused by heat generation in the power semiconductor element itself, thermal fatigue caused by temperature changes in the external environment of the power semiconductor element, and voltage fatigue caused by the voltage applied to the gate insulating film of the power semiconductor element.

[0004] Generally, life tests for power semiconductor devices are conducted by repeatedly turning current on and off to the device. For example, the test is conducted by applying a voltage and current to the emitter terminal (source terminal) and collector terminal (drain terminal) of the transistor of the semiconductor device, and applying a periodic on / off signal (operation / non-operation signal) to the gate terminal.

[0005] The current applied to the semiconductor element during testing is large, at several hundred amperes, and requires low-resistance wiring to avoid heat generation and voltage drop. Because the test current is large, the connections between the semiconductor element and the wiring must be low-resistance. In addition, there are many types of tests, and the wiring connections must be changed depending on the type of test. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Patent Publication No. 2014-138488 Summary of the Invention [Problem to be solved by the invention]

[0007] In a conventional semiconductor device testing device, a test of a power semiconductor device (such as a transistor) is carried out by turning on and off the transistor 117 and by passing a constant current Id through the channel of the transistor.

[0008] There are a wide variety of test items that can be performed by a semiconductor device tester (power cycle tester), and it is necessary to change the connection to the transistor 117 in accordance with the test items.

[0009] The constant current Id is often several hundred amperes or more, and therefore the connection wiring 211 and power supply wiring 212 that carry this current must be made of thick wire. Furthermore, a large current Id flows through the semiconductor element terminals. If there is contact resistance between the semiconductor element terminals and the connection wiring, the contact area will heat up, which can destroy the semiconductor element.

[0010] Changing the wiring connections of thick wires to accommodate test items takes a long time, and since it requires work space to change the wiring connections, there is a problem that the test equipment becomes large. [Means for solving the problem]

[0011] The semiconductor device testing apparatus of the present invention has a connection structure 218 that connects with device terminals 226 of a semiconductor device to be tested. One end of the connection structure 218 has contact portions 220 that come into contact with the device terminals 226, and a peat pipe 223 is attached to the surface of the connection structure 218. The connection structure 218 is electrically connected to the device terminals 226 of the semiconductor device 117 to be tested by inserting it into an opening 216 formed in a partition wall 217 and / or by inserting the connection structure into a groove in a support stand 323.

[0012] The semiconductor device testing device of the present invention separates the area (space) within the semiconductor device testing device where the transistor 117 to be tested is placed from the area where the circuit board is placed, which generates the test current for the transistor 117, generates the control signal, and acquires the test results. A partition wall is provided for separation.

[0013] The connection between the transistor to be tested and the circuit board is made by inserting a fork plug 205 (connection plug 205) through an opening 216 provided in the partition wall 214 and bringing the connection plug 205 into contact with a conductive plate on the circuit board. [Effects of the Invention]

[0014] Because there is contact resistance at the connection between element terminal 226 of transistor 117 to be tested and connection structure 218, the contact will heat up when a large current flows. In the present invention, heat pipe 223 is disposed in connection structure 218, so the generated heat can be efficiently conducted and released. Because element terminal 226 and connection structure 218 are structured to be inserted through opening 216 of partition wall 217, they can be easily attached to and detached from transistor 117 to be tested, and the connection with transistor 117 to be tested can be changed in a short time.

[0015] A partition wall 214 is provided to separate the location (space) in the semiconductor device testing equipment where the transistor 117 is placed from the location of the circuit board where the test current for the transistor 117 is generated, the control signal is generated, and the test results are acquired. A connection plug 205 is inserted through an opening 216 provided in the partition wall 214, and the connection plug 205 is connected to a conductor plate 204 on the circuit board. There is no need to connect the connection wiring 211 for each test item, and no work space is required for changing the wiring connection, allowing the semiconductor device testing equipment to be made smaller. [Brief explanation of the drawings]

[0016] [Figure 1] 1 is an explanatory diagram of an electrical element testing device according to the present invention; [Figure 2]1 is an explanatory diagram of a method of connecting an electric element testing apparatus and an electric element according to the present invention. [Figure 3] FIG. 2 is an explanatory diagram of a connection portion of the electrical element testing apparatus of the present invention. [Figure 4] FIG. 2 is an explanatory diagram of a connection portion of the electrical element testing apparatus of the present invention. [Figure 5] FIG. 2 is an explanatory diagram of a connection portion of the electrical element testing apparatus of the present invention. [Figure 6] FIG. 2 is an explanatory diagram of a connection portion of the electrical element testing apparatus of the present invention. [Figure 7] 1 is an explanatory diagram of a method of connecting an electric element testing apparatus and an electric element according to the present invention. [Figure 8] 1 is a configuration diagram of an electrical element testing device according to the present invention. [Figure 9] 1 is an explanatory diagram of an electrical element testing device according to the present invention; [Figure 10] 1 is an explanatory diagram of an electrical element testing device according to the present invention; [Figure 11] 1 is an explanatory diagram of an electrical element testing device according to the present invention; [Figure 12] 1A and 1B are structural diagrams and equivalent circuit diagrams of an electric element; [Figure 13] 1A and 1B are structural diagrams and equivalent circuit diagrams of an electric element; [Figure 14] 1 is an explanatory diagram of an electrical element testing device according to the present invention; [Figure 15] 1 is an explanatory diagram of a method of connecting an electric element testing apparatus and an electric element according to the present invention. [Figure 16] 1A and 1B are diagrams illustrating the configuration and explanation of a connection structure of the present invention; [Figure 17] 1A and 1B are diagrams illustrating the configuration and explanation of a connection structure of the present invention; [Figure 18] 1A and 1B are diagrams illustrating the configuration and explanation of a connection structure of the present invention; [Figure 19] 1A and 1B are diagrams illustrating the configuration and explanation of a connection structure of the present invention; [Figure 20] 1A and 1B are diagrams illustrating the configuration and explanation of a connection structure of the present invention; [Figure 21] 1A and 1B are diagrams illustrating the configuration and explanation of a connection structure of the present invention; [Figure 22]1A and 1B are diagrams illustrating the configuration and explanation of a connection structure of the present invention; [Figure 23] FIG. 2 is an explanatory diagram of a connection portion of the electrical element testing apparatus of the present invention. [Figure 24] FIG. 2 is an explanatory diagram of a connection portion of the electrical element testing apparatus of the present invention. [Figure 25] 1 is an explanatory diagram of an electrical element testing device according to the present invention; [Figure 26] 1 is a configuration diagram of an electrical element testing device according to the present invention. [Figure 27] 1 is an explanatory diagram of an electrical element testing device according to the present invention; [Figure 28] 1 is an explanatory diagram of an electrical element testing device according to the present invention; [Figure 29] FIG. 2 is an explanatory diagram of the operation of the electric element testing apparatus according to the first embodiment of the present invention. [Figure 30] FIG. 2 is an explanatory diagram of the operation of the electric element testing apparatus according to the first embodiment of the present invention. [Figure 31] FIG. 2 is an explanatory diagram of the operation of the electric element testing apparatus according to the first embodiment of the present invention. [Figure 32] FIG. 2 is an explanatory diagram of the operation of the electric element testing apparatus according to the first embodiment of the present invention. [Figure 33] FIG. 2 is an explanatory diagram of the operation of the electric element testing apparatus according to the first embodiment of the present invention. [Figure 34] FIG. 6 is an explanatory diagram of the operation of the electric element testing apparatus according to the second embodiment of the present invention. [Figure 35] FIG. 10 is an explanatory diagram of the operation of the electric element testing apparatus according to the third embodiment of the present invention. [Figure 36] FIG. 10 is an explanatory diagram of the operation of the electric element testing apparatus according to the fourth embodiment of the present invention. [Figure 37] FIG. 10 is an explanatory diagram of the operation of the electric element testing apparatus according to the fourth embodiment of the present invention. [Figure 38] FIG. 2 is an explanatory diagram of a power semiconductor element. DETAILED DESCRIPTION OF THE INVENTION

[0017] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An electric element testing apparatus and an electric element testing method for a power cycle test or the like according to embodiments of the present invention will be described below with reference to the accompanying drawings.

[0018] In the embodiments described in this specification, an IGBT will be used as an example of a power semiconductor device. However, the present invention is not limited to IGBTs and can be applied to various power semiconductor devices such as SiC, MOSFETs, JFETs, and transistors. Furthermore, the present invention is not limited to transistors and can also be applied to two-terminal devices such as diodes.

[0019] Furthermore, it goes without saying that the present invention is not limited to power semiconductor elements, but can also be applied to electronic elements such as low-power semiconductor elements, signal control semiconductor elements, resistor elements, capacitors, coils, crystal oscillators, thermistors, etc.

[0020] In the drawings for explaining the embodiments of the invention, elements having the same functions are denoted by the same reference numerals, and their explanations may be omitted. Also, the embodiments of the present invention can be combined with each other.

[0021] 8 is a configuration diagram of a power cycle test apparatus (semiconductor element test apparatus) of the present invention. The power cycle test apparatus has a chiller (cooling / heating device) 136, a heating / cooling plate 134, and a circulating water pipe 135 that circulates water between the heating / cooling plate 134 and the chiller 136. A transistor 117 is placed on the heating / cooling plate 134 as a semiconductor element to be tested. The test conditions are set by changing the current Id, gate voltage Vgs, and voltage Vce so that the temperature information Tj of the transistor 117 to be tested reaches a predetermined value.

[0022] If the temperature information Tj changes, it is determined that the transistor 117 has deteriorated or its characteristics have changed, and the test of the transistor 117 is stopped or the control method is changed.

[0023] Although the current flowing through or applied to the transistor 117 is described as a constant current Id, the present invention is not limited to this. It goes without saying that Id may be a current that changes at a predetermined cycle or a predetermined time. Furthermore, Id is not limited to a current and may be a voltage.

[0024] The change in temperature information Tj is used to determine or judge the change in characteristics of the transistor 117. Also, the change in characteristics, reliability, and lifespan of the transistor 117 are evaluated based on the time it takes for the voltage Vce to reach a predetermined voltage, the time it takes for the transistor 117 to break down, and the like.

[0025] In the semiconductor testing method of the present invention, the external conditions are changed in response to the deterioration or characteristic changes of transistor 117. For example, if transistor 117 generates heat, the water temperature is lowered. Lowering the water temperature reduces the current flowing through transistor 117, which prevents the deterioration and characteristic changes of transistor 117 from progressing, thereby extending the life of transistor 117. Therefore, the life and reliability characteristics of transistor 117 under specified set conditions can be quantitatively measured and determined.

[0026] The temperature of the transistor 117 is maintained at a specified or predetermined value by heating or cooling the circulating water in the chiller 136. The temperature of the transistor, etc., is also periodically changed in accordance with the test conditions, and is cooled or heated to a constant value. Temperature information Tj of the test transistor is measured, and the chiller 136 is controlled to maintain the measured temperature information Tj at a constant value.

[0027] Chillers are designed to maintain a constant temperature for equipment by circulating water or heat transfer fluid while controlling its temperature. They are primarily used for cooling, but can also heat as well as cool. They are designed to control a variety of temperatures.

[0028] The control rack 131 has a power supply device 132 that supplies a test current and a test voltage to the transistor 117, and a control circuit 133 that controls the transistor 117 or sets test conditions.

[0029] Temperature information Tj of transistor 117 is input to control circuit 133, and chiller 136 is controlled based on the temperature information Tj. Alternatively, chiller 136 is controlled so that temperature information Tj becomes a predetermined value.

[0030] Although circulating water is used in this specification, it is not limited to water. Ethylene glycol, glycerin, chlorofluorocarbon, etc. may also be used, or forced air cooling may be used. The chiller 136 controls the liquid in the circulating water pipe 135 to a temperature ranging from -1°C to +100°C, for example, and supplies it to the heating / cooling plate 134 of the test unit. The heating / cooling plate 134 has a sufficiently large heat capacity.

[0031] In the above embodiment, the heating / cooling plate 134 is used, but the heating plate and the cooling plate may be separate bodies, and heating / cooling may be performed using a heat source / cold source other than the heating / cooling plate.

[0032] Fig. 11 is a configuration diagram of a semiconductor device testing apparatus (for example, a power cycle testing apparatus for testing a power transistor) in a first embodiment of the present invention, and Fig. 29 is an equivalent circuit diagram or explanatory diagram of the semiconductor device testing apparatus.

[0033] The power supply device 132 has a current power supply circuit 121 and a switch circuit 122. The current power supply circuit 121 outputs a large constant current Id for testing the transistor 117. The current power supply circuit 121 supplies power (current, voltage) in synchronization with a control signal from the control circuit board 111 (controller 111), and uses the supplied power to drive the load at a set constant current or constant voltage. The current power supply circuit 121 can also set a maximum voltage value to be output.

[0034] The switch circuit 122 (SWa) turns on (supply) and off (cuts off) the supply of the constant current output by the current power supply circuit 121. The switch circuit 122 is set or controlled to be on (outputs constant current) or off (cuts off constant current) based on a signal from the control circuit board (controller) 111. Typically, the switch circuit 122 is turned on before the start of testing and is constantly maintained in the on state during testing of the semiconductor device.

[0035] 11 shows one current power supply circuit 121. The number of current power supply circuits 121 is not limited to one. For example, the semiconductor device testing apparatus of the present invention may have two or more current power supply circuits 121. The more current power supply circuits 121 there are, the more diverse the current waveforms Id that can be generated.

[0036] In the embodiment of the present invention, the power supply device 132 is described as having a current power supply circuit 121 that outputs a current, but the current power supply circuit 121 is not limited to one that outputs a constant current.

[0037] For example, the current power supply circuit 121 may be one that can set a maximum voltage. An example is a circuit that functions to output a predetermined constant current at a set maximum voltage under certain conditions. Another example is a circuit that is configured so that the output terminal voltage can be set to a predetermined maximum voltage when a constant current is output. It goes without saying that in the semiconductor device testing apparatus of the present invention, the current power supply circuit 121 need not be a device that outputs only a constant current, but may also be a power supply device that can output both voltage and current.

[0038] 11 and other embodiments are described assuming that the current Id is generated by the current power supply circuit 121, but the current Id can also be realized by adjusting the applied voltage depending on the state of the on-resistance of the transistor 117. Therefore, it goes without saying that the semiconductor device testing apparatus of the present invention is not limited to the current power supply circuit 121 that outputs a current, and may be configured as a power supply device that outputs a voltage.

[0039] The current Id can also be realized by controlling the voltage value of the gate voltage of the transistor 117. In this specification, it is described that a predetermined current is applied to the transistor 117 by controlling the current power supply circuit 121. However, this is not limitative, and it goes without saying that the voltage at the gate terminal g of the transistor 117 and the voltage at the collector terminal c of the transistor 117 may also be adjusted or controlled.

[0040] In the embodiment of the first semiconductor device testing method of the present invention, for ease of explanation, it is assumed that the constant current Id is generated by the current power supply circuit 121. The current Id flowing through the transistor 117 is supplied by operating the current power supply circuit 121. The current power supply circuit 121 is controlled to be turned on / off by a signal from the control circuit board (controller) 111. The timing of the device control circuit board 209 is controlled by the control circuit board (controller) 111.

[0041] The emitter terminal e of the transistor 117 is grounded (connected to the ground line). The gate terminal g of the transistor 117 is connected to the gate driver circuit 113.

[0042] A gate driver circuit 113, a variable resistance circuit 125, a constant current circuit 118, and an operational amplifier (buffer circuit) 116 are arranged or formed in the sample connection circuit 203. The sample connection circuit 203 is arranged separately from the device control circuit board 209 so that it can be arranged in a position close to the transistor 117 to be tested.

[0043] It is preferable to provide one sample connection circuit 203 for each transistor 117 to be tested, but this is not limited to this, and one sample connection circuit 203 including multiple signal circuits may be provided for multiple transistors 117.

[0044] The sample connection circuit 203 is connected to the transistor 117 via a connection pin 206 of the connector 202. The gate driver circuit 113 and the gate terminal g of the transistor 117 are arranged so that the distance between them is a short distance of 30 mm or less. If the distance between the gate driver circuit 113 and the gate terminal g of the transistor 117 is long, noise and the like will be superimposed on the gate terminal g, causing the transistor 117 to malfunction and directly leading to the destruction of the transistor 117.

[0045] 9, the device control circuit board 209 is placed in chamber B of the housing 210 of the semiconductor device testing equipment. The housing 210 is a frame or device body into which the power supply unit 132, drive circuit, and heating / cooling plate 134 of the semiconductor device testing equipment are incorporated. The sample connection circuit 203 is placed in chamber C1 of the housing 210 of the semiconductor device testing equipment in order to be located close to the transistor 117 to be tested. The sample connection circuit 203 is connected to a connector 208 placed on the side of the housing 210. Wiring connected to the connection pins 206 of the connector 208 is connected to the device control circuit board 209 in chamber B.

[0046] The housing 210 is not limited to a box-like shape, but may be, for example, a room. The image is that the current power supply circuit 121 is placed inside the room. The partition walls 214, 215, and 217 may be walls of the room.

[0047] 9, a semiconductor element 117 (transistor or the like) to be tested is placed in chamber C1. The transistor 117 or the like is placed and fixed in close contact with the heating / cooling plate 134. If necessary, as shown in FIG. 15, the transistor 117 and the like are sandwiched and fixed between heating / cooling plates 134a and 134b.

[0048] As described above, in the present invention, the housing 210 is divided into a plurality of regions such as the C1 chamber. The C1 chamber is configured to be injected with dry air (dry gas, gas with a low dew point temperature). Air pressure is applied to the C1 chamber, and the air injected into the C1 chamber is discharged through the opening 216, etc.

[0049] 1, 9, etc., the connection structure 218 is inserted from the C2 chamber through the opening 216 of the partition wall 217. By inserting the connection structure 218, an electrical connection is established between the element terminal 226 of the transistor 117 and the connection structure 218, making it possible to apply a constant current (test current) Id to the transistor 117. Also, as shown in FIGS. 23 and 24, the connection structure 218 is placed in a groove in the support base 323 and inserted into the element terminal 226 of the transistor 117. By inserting the connection structure 218, an electrical connection is established between the element terminal 226 of the transistor 117 and the connection structure 218.

[0050] The partition wall 217 functions as an electrostatic shield and a holder for the connection structure 218. It goes without saying that the partition wall 217 can be omitted if a separate electrostatic shield function component or a fixing or holding base for the connection structure 218 is arranged or configured. Furthermore, if the partition wall 217 is not provided, it goes without saying that the element terminal 226 of the transistor 117 may be positioned and fixed to the connection structure 218 .

[0051] The partitions (partitions 214, 215, and 217) have the function of separating the chambers (chamber C1, chamber C2, chamber A, and chamber B) and the function of preventing outside air from flowing in. In particular, dry air is flowed into chamber C1 because condensation may occur in chamber C1 during testing at low temperatures. The dry air that flows into chamber C1 is discharged to the other chambers through opening 216. However, if opening 216 is large, a large amount of dry air is required. Therefore, it is preferable that opening 216 be sized so that fork plug 205 and connection structure 218, which serve as connecting members, can be inserted.

[0052] A fixing screw 221 is attached to the other end of the connection structure 218, and the connection wiring 211 is connected to the connection structure 218. A fork plug 205 is attached to the other end of the connection wiring 211 as a connection member. The connection structure 218 is made of copper or a copper alloy, and the surface is plated with silver or nickel.

[0053] The fixing screw 221 is not limited to a screw, and may be any type that can electrically connect the connection wiring 211 to the connection structure 218. It goes without saying that the fixing screw 221 may be one that can make contact by being pressed by a spring (not shown).

[0054] The sample connection circuit 203 is connected to a device control circuit board 209 by connection pins 206 of a connector 208. The sample connection circuits 203 are individually arranged corresponding to the respective transistors 117 to be tested, and the sample connection circuits 203 are configured to be easily removable. The connectors 208 and 213 are not limited to connectors, and may be any type that can electrically connect or disconnect wires.

[0055] 3A and 3B are explanatory diagrams of a connection structure 218 in a semiconductor device testing apparatus according to the present invention. Fig. 3A is a diagram showing a schematic back surface, and Fig. 3B is a diagram showing a schematic side surface.

[0056] The heat pipe 223 is in close contact with the recess 234 on the surface of the connection structure 218. Heat conductive grease or heat dissipating silicone oil compound may be applied between the surface of the connection structure 218 and the heat pipe.

[0057] In the connection structure 218 of the present invention, a heat pipe 223 is disposed on the side of a connecting metal fitting 233. It is preferable that the heat pipe fitting 231 and the connecting metal fitting 233 are integrated. The connecting metal fitting 233 and the element terminal 226 are in electrical contact with each other, and a test current is supplied to the semiconductor element 117 or the like.

[0058] The connecting fitting 232 comes into contact with the element terminal 226, and holds the element terminal 226 between the connecting fitting portion 233 and the connecting fitting 232. The connecting fitting 232 is not required to be a conductive material such as metal. It is preferable to configure the connecting fitting 232 so that the test current does not flow.

[0059] Connection structure 218 of the present invention is formed with recess 234, and heat pipe 223 is configured to fit into recess 234. Heat pipe fitting 231 of connection structure 218 is made of a material whose linear expansion coefficient is smaller than that of heat pipe 223.

[0060] The connection portion of the connection structure 218 with the element terminal 226 generates heat, and the connection structure 218 is heated. Therefore, the heat pipe 223 and the heat pipe fitting 231 are heated. The heat causes the heat pipe 223 and the heat pipe fitting 231 to expand.

[0061] In the present invention, a material having a linear expansion coefficient smaller than that of the heat pipe 223 is used for the heat pipe fitting 231 of the connection structure 218, or a material having a linear expansion coefficient larger than that of the heat pipe fitting 231 is used for the heat pipe 223 of the connection structure 218. The material of the heat pipe 223 expands more in the recess 234, and the heat pipe 223 is more firmly fitted into the recess 234. Therefore, the heat pipe 223 will not come off.

[0062] Examples of materials for the heat pipe fitting 231 include copper (linear expansion coefficient 16.8), brass (linear expansion coefficient 19), iron (linear expansion coefficient 12.1), and stainless steel (SUS304) (linear expansion coefficient 17.3). Examples of materials for the heat pipe 223 include materials with a linear expansion coefficient greater than that of the heat pipe fitting 231, such as aluminum (linear expansion coefficient 23), tin (linear expansion coefficient 26.9), and lead (linear expansion coefficient 29.1). Of these, it is preferable to use copper (linear expansion coefficient 16.8) for the heat pipe fitting 231 and aluminum (linear expansion coefficient 23) for the heat pipe 223.

[0063] The rate at which length changes in response to a rise in temperature is called the linear expansion coefficient. Similarly, the rate at which volume changes is called the volumetric expansion coefficient. If the linear expansion coefficient is α and the volumetric expansion coefficient is β, then there is a relationship of β ≒ 3α. The thermal expansion coefficient indicates the rate at which an object's length and volume expand (thermal expansion) as its temperature rises, per unit of temperature. It is also called the thermal expansion coefficient.

[0064] In the present invention, it is preferable to use a material whose linear expansion coefficient for the heat pipe fitting 231 of the connection structure 218 is smaller than that of the heat pipe 223 pipe, or to use a material whose linear expansion coefficient for the heat pipe 223 pipe of the connection structure 218 is larger than that of the heat pipe fitting 231, but it goes without saying that the linear expansion coefficient may be replaced with the thermal expansion coefficient or the volumetric expansion coefficient.

[0065] The recess 234 is formed in the heat pipe fitting 231. The heat pipe 223 is arranged so as to fit into the recess 234. By arranging the heat pipe 223 in the recess, the risk of the heat pipe 223 being damaged is reduced.

[0066] The heat pipe metal fitting 231 is made of a metal that has good electrical and thermal conductivity. Examples of the metal include copper and silver. Other non-metallic materials such as carbon can also be used.

[0067] It is preferable to use thermally conductive grease containing boron nitride (boron).It is preferable to use heat dissipating silicone oil compound that uses silicone oil as a base oil and is mixed with powder with good thermal conductivity such as alumina. The heat pipe 223 is a sealed container in which a small amount of liquid (working liquid) is vacuum sealed, and which has a capillary structure (wick) on the inner wall.

[0068] When part of the heat pipe is heated, the working fluid evaporates in the heated area (absorbing the latent heat of evaporation), and the vapor moves to the low-temperature area at high speed (sonic speed). The vapor condenses in the low-temperature area (releasing the latent heat of evaporation), and the condensed working fluid flows back to the heated area due to the capillary action of the wick. The above phase changes are repeated continuously without any external force, allowing heat to move instantly, enabling the heat generated at the terminals of the semiconductor element to be transferred quickly and efficiently.

[0069] The heat pipe 223 is made up of an array of multiple containers (copper pipes). The inside of the container is under highly reduced pressure and contains a wick (capillary structure) and an appropriate amount of working fluid (pure water, etc.). As the working fluid, in addition to pure water, methanol (methyl alcohol), acetone, sodium, mercury, a fluorocarbon-based refrigerant, or ammonia may be used. Wick materials include aluminum, copper, stainless steel, sintered alloy, wire mesh, foam metal, and ceramic.

[0070] The connection structure 218 is not limited to metal. It goes without saying that it may be made of a non-metallic material such as ceramic, graphite, or a composite material of graphite and copper or aluminum. In the case where a current is directly passed through the connection structure 218, the connection structure 218 is made of a metallic material such as copper. The surface of the connection structure 218 is preferably plated with silver, nickel, or the like.

[0071] 3, the connection structure 218 is mainly composed of a heat pipe fitting 231, a connection fitting 232, and a connection fitting portion 233. An element terminal 226 of the semiconductor element is inserted between the connection fitting 232 and the connection fitting portion 233.

[0072] 12 is an explanatory diagram of a semiconductor element 117 to be tested. A transistor is shown as an example of the semiconductor element 117. The transistor 117 has a P terminal (collector terminal of the transistor 117) to which a large current is applied, and an N terminal (emitter terminal of the transistor 117) to which a large current is applied. A diode Di is formed or added between the emitter terminal and the collector terminal. A test current Id is applied to the P terminal and the N terminal.

[0073] The transistor 117 has a collector terminal c, a gate terminal g, and an emitter terminal e. A signal Vgs that turns the transistor 117 on and off is applied to the gate terminal g. A constant current Ic is passed from a constant current circuit 118 to a diode Di between the emitter terminal e and the collector terminal c.

[0074] Contact portions 225a and 225b are disposed between the connector 232 and the connector 233. Platinum, gold, silver, tungsten, copper, nickel, or an alloy of any of these metals is used for the contact portions 225. It is also preferable to use silver-oxide contact materials (Ag+ZnO, Ag+SnO2, Ag+SnO2In2O3, Ag+, Ag+SnO2Sn2Bi2O7).

[0075] As an example, the connecting fitting part 233 is integrated with the heat pipe fitting 231. The connecting fitting 232 is fixed to the connecting fitting part 233 with a fixing screw 224b. The element terminal 226 of the semiconductor element is fixed by tightening the fixing screw 224b. The connecting wiring 211 is fixed to the left end of the heat pipe fitting 231 with a fixing screw 221.

[0076] 15 is an explanatory diagram of the state in which the element terminal 226 is connected to the connection structure 218. The element terminal 226 is sandwiched between the contact portion 225a and the contact portion 225b. The connection fitting 232 is fixed to the element terminal 226 by the fixing screw 224b.

[0077] The transistor 117 is fixed to a heating / cooling plate 134a and further sandwiched between heating / cooling plates 134b. The transistor 117 is appropriately maintained at a test temperature by the heating / cooling plates 134. A heat pipe 223 is attached in the recess 234.

[0078] A test constant current Id is applied from the connection structure 218 to the element terminal 226. The constant current Id is large, at several hundred amperes (A). The element terminal 226 is small, and there is contact resistance between the contact portion 225 and the element terminal 226. Therefore, when a large current flows through the element terminal 226, heat is generated at the contact portion 225.

[0079] The heat is conducted to the transistor 117 under test, overheating the transistor 117. Overheating may cause deterioration of the transistor 117 or burnout of the element terminal 226. Therefore, the heat generated at the contact portion 225 must be dissipated quickly.

[0080] The connection structure 218 of the present invention has a heat pipe 223. Heat generated at the contact portion 225 is transferred by the heat pipe 223. Therefore, the heat at the contact portion 225 is quickly removed from the contact portion 225.

[0081] A partition wall 217 is disposed between the C1 chamber and the C2 chamber. As shown in Fig. 14, an opening 216 is formed in the partition wall 217. A connection structure 218a1 is inserted into the opening 216a1, and a connection structure 218b1 is inserted into the opening 216b1. A connection structure 218a2 is inserted into the opening 216a2, and a connection structure 218b2 is inserted into the opening 216b2. A connection structure 218an is inserted into the opening 216an, and a connection structure 218bn is inserted into the opening 216bn.

[0082] 36, the P terminal of the transistor 117Q1 to be tested is sandwiched and electrically connected between the connecting fitting 232 and the connecting fitting portion 233 of the connecting structure 218a1. Also, the N terminal of the transistor 117Q1 to be tested is sandwiched and electrically connected between the connecting fitting 232 and the connecting fitting portion 233 of the connecting structure 218b1.

[0083] Similarly, the P terminal of the transistor 117Q2 to be tested is sandwiched and electrically connected between the connecting fitting 232 and the connecting fitting portion 233 of the connecting structure 218a2. Furthermore, the N terminal of the transistor 117Q2 to be tested is sandwiched and electrically connected between the connecting fitting 232 and the connecting fitting portion 233 of the connecting structure 218b2.

[0084] Similarly, the P terminal of the transistor 117Qn to be tested is sandwiched and electrically connected between the connecting fitting 232 and the connecting fitting portion 233 of the connecting structure 218an. Furthermore, the N terminal of the transistor 117Qn to be tested is sandwiched and electrically connected between the connecting fitting 232 and the connecting fitting portion 233 of the connecting structure 218bn.

[0085] An electromagnetic shield plate, electrostatic shield plate, or electromagnetic shield mesh is arranged on the partition wall 217, which blocks noise from the power supply device 132 and the drive circuit system in chamber B, preventing the noise from being applied to chamber C1. In addition, noise generated by the on / off switching of transistor 117 is not applied to the drive circuit system in chamber B.

[0086] FIG. 1 is an explanatory diagram illustrating the connection state between transistor 117 and connection structure 218. Transistor 117 is fixed in close contact with heating / cooling plate 134a. Fixation is achieved by a spring (not shown). The adhesion may be achieved by applying thermally conductive grease or a silicone oil compound for heat dissipation. If necessary, as shown in FIG. 15, heating / cooling plate 134b may also be placed above transistor 117 to allow transistor 117 to be set to a predetermined temperature condition.

[0087] A connector 202 is connected to the terminals (emitter terminal e, gate terminal g, collector terminal c) of the transistor 117. A signal wiring 222 is drawn out to the connector 202. A control signal Vgs to be applied to the gate terminal g of the transistor 117 and a constant current Ic from a constant current circuit 118 are applied to the signal wiring 222.

[0088] Connection structure 218a is inserted into opening 216a of partition wall 217 from the C2 chamber side. Connection structure 218b is similarly inserted into opening 216b of partition wall 217 from the C2 chamber side. When connection structure 218 is inserted, element terminal 226 is sandwiched between connection fitting 232 and connection fitting portion 233. In this state, element terminal 226 of transistor 117 and connection structure 218 are electrically connected by tightening fixing screw 224b.

[0089] The transistors 117 to be tested must be fixed in close contact with the heating and cooling plate 134, and are therefore difficult to remove. The transistor 117 is attached by first fixing the multiple transistors 117 to be tested to the heating and cooling plate 134. Next, the transistor 117 to be tested first is selected, and connecting structure 218 is attached to element terminal 226.

[0090] The selected transistor 117 is electrically connected to the element terminal 226 by inserting the connection structure 218 from the C2 chamber side into the opening 216 where the selected transistor 117 is located.

[0091] Electrical connection with the transistor 117 is easy because it is only necessary to select the position where the connection structure 218 is inserted. In addition, by changing the signal applied to the connection wiring 211 connected to the connection structure 218, the test conditions and test contents of the transistor 117 can be easily changed.

[0092] Element terminal 226 is clamped by applying pressure between contact portions 225a and 225b. Connection wiring 211 is connected to one end of connection structure 218, and constant current Id is applied from connection wiring 211 to transistor 117. Heat pipe 223 is arranged on the back side of connection structure 218.

[0093] A current of several hundred amperes (A) flows through element terminal 226. Even if there is a slight resistance at contact point 225, a current of several hundred amperes (A) generates a large amount of heat, overheating element terminal 226. When this occurs, transistor 117 also becomes overheated, causing transistor 117 to deteriorate or break down.

[0094] In the present invention, heat generated at contact point 225 is transferred to connection wiring 211 of connection structure 218 by heat pipe 223. Therefore, contact point 225 does not overheat. A cooling fan 227 is disposed below connection structure 218 to dissipate heat from heat pipe 223. FIG. 2 is an explanatory diagram for explaining a method of connecting a semiconductor element 117 and a connection structure 218 in the semiconductor testing device of the present invention.

[0095] A partition wall 217 is provided between the C1 chamber and the C2 chamber. As shown in Fig. 14, an opening 216 is formed in the partition wall 217 corresponding to the position of the transistor 117 to be tested, etc. The opening 216 in the partition wall 217 and a fixing base (not shown) for the connection structure 218 allow the connection structure 218 to be positioned and fixed horizontally or stably.

[0096] 2(a), the transistor 117 to be tested is positioned and fixed in place by being in close contact with the heating / cooling plate 134a. Thermally conductive grease and heat-dissipating silicone oil compound are applied between the transistor 117 and the heating / cooling plate 134a.

[0097] A detachable connector 202 is connected to the terminals (emitter terminal e, gate terminal g, collector terminal c) of the transistor 117. A signal wiring 222 is connected to the connector 202, and the signal wiring 222 is connected to a sample connection circuit 203.

[0098] The signal wiring 222 between the sample connection circuit 203 and the connector 202 is formed to be as short as possible. If the signal wiring 222 is long, noise will be superimposed on the signal wiring 222, causing the transistor 117 to malfunction. For example, if noise is superimposed on the gate terminal g of the transistor 117, the transistor 117 may turn on and be destroyed. The signal wiring 222 should be twisted wiring, or a shielded wiring such as a coaxial cable should be used.

[0099] 9, the connector 208 is provided on the side of the housing 210, and the connector 208 and the device control circuit board 209 arranged in chamber B are connected by signal wiring 235. Control signals or output signals of the gate driver circuit 113, gate signal control circuit 112, temperature measurement circuit 115, variable resistance circuit 125, and operational amplifier circuit 116 are inputted and outputted from the device control circuit board 209.

[0100] 2(b), the connection structure 218a is inserted into the opening 216a. By inserting the connection structure 218a into the opening 216a, the element terminal 226a of the transistor 117 is sandwiched between the connection fitting 232 at the tip of the connection structure 218a and the connection fitting portion 233. After the connection structure 218a and the element terminal 226a are connected, the fixing screw 224b1 is tightened, thereby achieving good electrical connection between the contact portion 225 and the element terminal 226.

[0101] Similarly, connection structure 218b is inserted into opening 216b. By inserting connection structure 218b into opening 216b, element terminal 226b of transistor 117 is sandwiched between connection fitting 232 at the tip of connection structure 218b and connection fitting portion 233. After connection structure 218b and element terminal 226b are coupled, fixing screw 224b2 is tightened, thereby achieving good electrical connection between contact portion 225 and element terminal 226.

[0102] A cooling fan 227 for removing heat from the heat pipe 223 is disposed on the rear surface of the connection structure 218. The rotation speed of the cooling fan 227 is controlled according to the overheating state of the element terminal 226 and the heat pipe 223.

[0103] 3, the heat pipe 223 is attached to the recess 234 of the heat pipe fitting 231 of the connection structure 218. However, the present invention is not limited to this.

[0104] For example, connection structure 218 may be configured as shown in Fig. 4. In Fig. 4, Fig. 4(a) is a schematic illustration of the back surface (lower surface) of connection structure 218, and Fig. 4(b) is a schematic illustration of the front surface (upper surface) of connection structure 218.

[0105] 4, heat pipe 223a is disposed on concave surface 234a. Heat pipe 223a is formed or disposed up to connecting metal fitting portion 233. By forming or disposing heat pipe 223a up to connecting metal fitting portion 233, heat generated by element terminal 226 can be transferred more efficiently.

[0106] 4(b), the heat pipe 223b is disposed on the concave surface 234b. By disposing the heat pipe 223 on both sides of the connection structure 218, the heat generated by the element terminal 226 can be transferred more efficiently.

[0107] 3 and the like, the heat pipe 223 and the like are cooled by the cooling fan 227, but the present invention is not limited to this. For example, as shown in Fig. 5, heat dissipation fins 228 may be formed or arranged so as to be in close contact with the heat pipe 223. Heat transferred within the heat pipe 223 is efficiently transferred to the heat dissipation fins 228, further improving the heat transfer and heat dissipation effect of the heat pipe 223.

[0108] 5 is not formed or arranged in a location corresponding to the opening 216. The connection structure 218 is inserted from the C2 chamber toward the C1 chamber through the opening 216. In order to maintain the airtightness of the C1 chamber, the opening 216 has a size that is the cross-sectional area of ​​the connection structure 218 plus α. Therefore, if the heat dissipation fin 228 is formed or arranged on the connection structure 218, it cannot be inserted into the opening 216. Therefore, the heat dissipation fin 228 is not formed or arranged on the side of the partition wall 217 that is connected to the element terminal 226 of the transistor 117.

[0109] 6, a circulating water pipe 135 may be formed or disposed within the connection structure 218 to cool the connection structure 218. The connection structure 218 is cooled by the refrigerant flowing within the circulating water pipe, and the heat conducted within the heat pipe 223 is efficiently transferred to the connection structure 218. Therefore, the heat generated in the element terminals 226 is efficiently dissipated.

[0110] The transistor 117 (semiconductor element 117) in Fig. 12 has two element terminals 226: element terminal 226a (P) and element terminal 226b (N). However, as shown in Fig. 13, there are also transistors 117 whose element terminals 226 are three: element terminal 226a (P), element terminal 226b (N), and element terminal 226c. The semiconductor element testing apparatus and semiconductor element testing method of the present invention can test a wide variety of semiconductor elements 117.

[0111] 13 has two transistors, transistor 117m and transistor 117s, arranged in one package. The collector terminal c of transistor 117s is connected to element terminal 226a. The emitter terminal e of transistor 117s and the collector terminal c of transistor 117m are connected, with the midpoint connected to element terminal 226c. The emitter terminal e of transistor 117m is connected to element terminal 226b.

[0112] The transistor 117m is connected to an emitter terminal e1, a gate terminal g1, and a collector terminal c1, while the transistor 117s is connected to an emitter terminal e2, a gate terminal g2, and a collector terminal c2.

[0113] FIG. 7 is an explanatory diagram illustrating the connection state between a transistor 117 (semiconductor element 117) having three element terminals 226 (element terminal 226a (P), element terminal 226b (N), element terminal 226c (O)) and a connection structure 218.

[0114] In FIG. 7, the connection between the connection structure 218a and the element terminal 226a, and the connection between the connection structure 218b and the element terminal 226b are the same as those described in FIGS. 1 and 2, and therefore will not be described again.

[0115] In FIG. 7, a heat pipe 223a is formed or arranged in the connection structure 218a, and a heat pipe 223b is formed or arranged in the connection structure 218b, whereas a heat pipe 223a is not formed or arranged in the connection structure 218c. The connection structure 218c is connected to the element terminal 226c. A large current does not flow through the element terminal 226c(O) of the transistor 117. Therefore, the element terminal 226c does not overheat. There is no need to form the heat pipe 223 in the connection structure 218c. By forming the connection structure 218c thinner than the other connection structures 218 (connection structure 218a, connection structure 218b), it is possible to easily connect the connection structure 218 and the element terminal 226 of the transistor 117. Furthermore, since the space required to arrange the transistors 117 is narrow, a larger number of transistors 117 can be mounted on the heating / cooling plate 134.

[0116] It goes without saying that the heat pipe 223 may be formed or disposed on the connection structure 218c. Other details are the same as or similar to the embodiment shown in Figures 1 and 2, and therefore a description thereof will be omitted.

[0117] 15, the element terminal 226 is sandwiched between the contact portions 225a and 225b to establish an electrical connection. The current supplied to the element terminal 226 of the transistor 117 mainly flows through the connecting metal part 233, but some current flows from the connecting metal part 232 to the element terminal 226. The current flowing through the connecting fitting 232 flows in the following order: fixing screw 224 b → connecting fitting 232 → contact portion 225 b → element terminal 226 . The current flowing through the element terminal 226 can be as large as several hundred amperes, and if the connection resistance is high at the fixing screw 224b or the like, heat will be generated and the heat generating portion will burn out.

[0118] Although this specification and drawings depict connector fittings 232 as being conductive, connector fittings 232 are not required to be made of conductive metal. Needless to say, they may be made of resin or other materials. FIG. 16 is an explanatory diagram illustrating a method and structure for connecting a connection structure 218 and an element terminal 226 in another embodiment of the present invention.

[0119] The device terminal 226 is sandwiched between a pressing tool mounting plate 313 and a connecting fitting portion 233. Pressing tools 311a and 311b are attached to the pressing tool mounting plate 313. The pressing tool 311 is exemplified by a metal leaf spring. The pressing tool 311 may be formed from a non-conductive material such as a silicone resin material. The pressing tool 311 is fitted into the pressing tool mounting plate 313. It is preferable that the surface of the pressing tool 311 is roughened so that it can press the device terminal 226 appropriately.

[0120] The element terminal 226 is clamped between the flat surfaces of the pressing tool 311 and the connecting metal part 233. The pressing of the pressing tool 311 electrically connects the element terminal 226 and the connecting metal part 233. The pressing tool 311 is not required to be conductive.

[0121] It is preferable that the connecting metal fitting 233 is configured as one unit with the heat pipe fitting 231. The connecting metal fitting 232 is fixed to the connecting metal fitting 233 with a fixing screw 224b. The element terminal 226 of the semiconductor element is fixed by tightening or positioning the fixing screw 224b. The connecting wiring 211 is fixed to the left end of the heat pipe fitting 231 with a fixing screw 221. The connecting fitting part 233 is connected and fixed to the connecting fitting 232 by screws 224b inserted into the screw holes 238b1 and 238b2.

[0122] The screw 224 may be made of, but is not limited to, a metal material such as phosphor bronze or stainless steel. It may also be made of a non-conductive material such as a resin material. Alternatively, it may be made of a cushioning material such as a sponge.

[0123] The pressing tool mounting plate 313 has protrusions 251 formed on both ends, and the connecting fittings 232 have grooves 252 formed on both ends. The protrusions 251 of the pressing tool mounting plate 313 fit into the grooves 252 of the connecting fittings 232. The protrusions 251 of the pressing tool mounting plate 313 and the grooves 252 of the connecting fittings 232 are configured to be in electrical contact with each other.

[0124] Figure 18 is an explanatory diagram and a configuration diagram of the pressure mounting plate 313 of Figure 16. Figure 18(a) is a side view of the pressure mounting plate 313, and Figure 18(b) is a bottom view of the pressure mounting plate 313 as seen from the backside.

[0125] 18(b), a plurality of pressing tools 311a and a plurality of pressing tools 311b are arranged in a matrix on the back surface of the pressure mounting plate 313. In addition, as shown in FIG. 18(a), the pressing tool 311 is fitted into the pressure mounting plate 313.

[0126] Positioning screw holes 240 are formed in the pressure mounting plate 313, and positioning fixing screws 237 are inserted into the positioning screw holes 240. Also, spring holes 239 are formed in the pressure mounting plate 313, and springs 236 are inserted into the spring holes 239. In the embodiment of FIG. 16, a spring (pressure fitting) 236 applies an appropriate pressure between the pressing tool 311 and the element terminal 226, thereby maintaining a good electrical connection.

[0127] 16, spring (pressure fitting) 236 is inserted into spring hole 239 of contact portion 225. If spring (pressure fitting) 236, contact portion 225, and connecting fitting 232 are made of conductive materials, electricity may flow from element terminal 226 → contact portion 225 → spring (pressure fitting) 236 → connecting fitting 232. In this case, if the resistance value of spring (pressure fitting) 236 is high, current may flow through spring (pressure fitting) 236, causing the spring to generate heat and burn out.

[0128] If the pressing tool 311 is made of a non-conductive material and configured so that no current flows through the pressing tool mounting plate 313, the above-mentioned current path will not be generated and the spring (pressure fitting) 236 will not be burned.

[0129] 17 is an explanatory diagram and diagram of a connection structure 218 according to another embodiment of the present invention. In the embodiment of the present invention shown in FIG. 17, a spring hole 312 is formed in an insulating plate 312. A pressing tool 311 contacts an element terminal 226, and a spring 236 presses a pressing tool mounting plate 313. An insulating plate 312 is disposed above the pressing tool mounting plate 313, providing insulation between the pressing tool mounting plate 313 and the spring 236. A spring hole 239 is formed in the insulating plate 312, and a spring 236 is inserted into the spring hole 239.

[0130] As shown in Fig. 17, pressing tool 311 comes into contact with element terminal 226, and spring 236 presses pressing tool mounting plate 313. An insulating plate 312 is arranged above pressing tool mounting plate 313 to provide insulation between pressing tool mounting plate 313 and spring 236. A spring hole 239 is formed in insulating plate 312, and spring 236 is inserted into spring hole 239. The other configuration is the same as in Fig. 16, so a description thereof will be omitted.

[0131] Figure 19 is an explanatory diagram of the pressing tool attachment plate 313 and insulating plate 312 of the connection structure 218 in Figure 17. Figure 19(a) is a side view of the pressing tool attachment plate 313. Figure 19(b) is a side view of the pressing tool attachment plate 313 as seen from side A in Figure 19(a).

[0132] Pressing tools 311a and 311b are arranged and inserted into pressing tool mounting plate 313. In the embodiment of Fig. 19, insulating plate 312 and protrusion 251 are made of insulating material, and spring hole 312 is formed in insulating plate 312. Therefore, since spring hole 312 is insulated, no current path is generated in connecting fitting 232.

[0133] Since insulating plate 312 is made of an insulating material, even if pressing tool attachment plate 313 is made of a conductive material such as metal, no current flows through spring (pressure fitting) 236. Therefore, no current path is generated from element terminal 226 → contact portion 225 → spring (pressure fitting) 236 → connecting fitting 232. The insulating plate 312 may be an insulating film, an insulating film, or an insulating gas such as air, etc. The pressing tool attachment plate 313 may be made of a non-conductive material.

[0134] The embodiment of Fig. 17 has a configuration in which insulation is achieved by an insulating plate 312. The insulating effect of the present invention is not limited to the configuration using an insulating plate 312 as in Fig. 17. For example, a configuration shown in Fig. 20 is exemplified.

[0135] Fig. 20 shows a configuration in which an insulating portion 315 made of a resin material or the like is arranged around the screw hole 238b of the connecting fitting 232. Fig. 22 is a configuration diagram of the connecting fitting 232 of Fig. 20 as seen from the back. As shown in Fig. 22, the screw hole 238b is surrounded by insulating portion 315, so that the screw can be insulated. Note that fixing screws 224b made of an insulating material may also be used.

[0136] No current flows through fixing screw 224b because the periphery of screw hole 238b is insulated by insulating portion 315. Therefore, no current path is generated from element terminal 226 to contact portion 225 to spring (pressure fitting) 236 to connecting fitting 232, and spring (pressure fitting) 236 is not burned. As described above, the present invention is configured such that insulating plate 312 is disposed on the side of spring 236 that applies pressure, so that current does not flow to pressing tool mounting plate 313 and contact portion 225 side.

[0137] When a current flows, it flows through pressing parts such as spring 236 and fixing screw 224b, causing the spring 236 and fixing screw 224b to burn out. Current is supplied to element terminal 226 via connecting metal fitting 233, which has fewer electrically high resistance parts such as spring 236.

[0138] 16, 17 and 20 show examples of the connection structure 218 having the pressing tool 311. The present invention is not limited to this, and may have a configuration as shown in FIG. 21, for example.

[0139] 21 shows a configuration in which an element terminal 226 is sandwiched between a contact portion 225 and a connecting fitting portion 233. By roughening the surface of the contact portion 225, it is possible to apply pressure uniformly to the element terminal 226. By making the contact portion 225 out of an insulating material, it is possible to prevent a current path from occurring in the connecting fitting 232.

[0140] It goes without saying that preventing a current path from occurring on the connecting fitting 232 side can also be achieved by making the fixing screw 224b and the connecting fitting 232 out of insulating material.

[0141] In the electrical element testing apparatus of the present invention, as illustrated and explained in Figures 1, 14, etc., one end of the connection structure 218 is connected to the element terminal 226 of the semiconductor element 117 by inserting the connection structure 218 into the opening 216. However, the present invention is not limited to this. For example, the configurations illustrated in Figures 23 and 24 are exemplified.

[0142] Fig. 23 is an explanatory diagram showing connection structure 218 of the electrical element testing apparatus of the present invention as seen from the front. Fig. 24 is an explanatory diagram showing connection structure 218 of the electrical element testing apparatus of the present invention as seen from above. A cooling fan 227 is disposed on the side, and the fan cools heat pipe 223 of connection structure 218.

[0143] 23 illustrates the heater / cooler 322 with the top side facing the paper and the bottom side facing the paper. As an example, the heater / cooler 322 has two electric element insertion holes 324, and the electric elements 117 are inserted into the electric element insertion holes 324 in close contact with the heater / cooler 322. A connection structure 218a is connected to an element terminal 226a of the electric element 117, and a connection structure 218b is connected to an element terminal 226b of the electric element 117.

[0144] A circulating water pipe 135 is attached to the heater / cooler 322, and circulating water flows in through the circulating water pipe 135a, circulates within the heater / cooler 322, and is discharged from the circulating water pipe 135b. The circulating water maintains the electric element 117 at a predetermined temperature.

[0145] The connection structure 218 is placed in the slide groove 325 of the support base 323, and by sliding the connection structure 218 along the slide groove 325, the connection fittings 232 and connection fitting portions 233 of the connection structure 218 are electrically connected to the element terminals 226.

[0146] 25 illustrates the fork plug 205 and the connection (contact) state between the fork plug 205 and the conductor plate 204. Two conductor plates 204 are attached to the switch circuit board 201. The switch circuit board 201 has a full-surface earth layer (not shown), and the full-surface earth layer and the conductor plate 204 are thermally connected. Heat from the conductor plate 204 is dissipated via the full-surface earth layer. The conductor plate 204 and the switch circuit board 201 are fastened together with screws.

[0147] Although the present specification and drawings describe the conductor plate 204 as a plate, it is not limited to a plate and may be rod-shaped. Any shape may be used as long as it can be joined to a structure such as the fork plug 205. For example, it may be a structure such as a socket or connector. Furthermore, the conductor plate 204 may be shaped like a fork plug, and the fork plug 205 may be connected to the fork plug.

[0148] In addition, the fork plug 205 is described as being inserted into a component or structure that separates spaces, such as the partition wall 214, but the present invention is not limited to this. For example, the fork plug 205c may be connected to the conductor plate 204b, and the fork plug 205c may be inserted through the partition wall 214 to establish electrical connection with the emitter terminal e of the transistor 117.

[0149] The partitions 214 and 215 may be of any type as long as they divide or separate spaces or regions, and may have a wide variety of configurations or structures such as a wall, plate, mesh, film, or foil.

[0150] The fork plug 205 may have any configuration, structure, form, style, or method that allows it to be electrically connected to an object such as the conductive plate 204 by press-fitting, pressure welding, insertion, crimping, clamping, fitting, or the like.

[0151] The switch circuit 124 is connected to two conductor plates. As shown in FIG. 30, if the switch circuit 124 is a MOS transistor, the drain terminal and the source terminal are connected to different conductor plates 204. If the switch circuit 124 is a bipolar transistor, the collector terminal and the emitter terminal are connected to different conductor plates 204. When the switch circuit 124 is turned on (conducting), the two conductor plates 204 are electrically connected. An IGBT can also be used as the switch circuit 124.

[0152] The switch circuit 124 is mounted on a switch circuit board 201. The switch circuit 124 is connected to a conductor plate 204 (metal plate, conductive plate). The conductor plate 204 is, for example, a copper plate with a thickness of 5 mm and a width of 50 mm. Its length is the width of the circuit board plus the width required to connect the fork plug 205.

[0153] Fork plug 205 and conductor plate 204 are electrically connected by mechanically fitting them together. When the U-shaped portion of fork plug 205 is inserted into conductor plate 204, the U-shaped portion expands slightly, ensuring a good connection between fork plug 205 and conductor plate 204. This good connection or fitting results in extremely low electrical resistance at the connection, and no heat generation or voltage drop occurs even when a large current flows through the connection.

[0154] A connection bolt 219 is attached to the fork plug 205. A connection wiring 211 is connected to the connection bolt 219. A cross section taken along line AA' in FIG. 25(a) is shown in FIG. 25(b). The conductive plate 204 and the fork plug 205 are in contact with each other at contact portions 220a and 220b formed on the fork plug 205. The surface of the contact portion 220 is silver-plated. The contact portion 220 is made of phosphor bronze and a nickel alloy. The connection bolt 219 is not limited to a bolt, and may be any type that can electrically connect the fork plug 205 and a wire. At least the surface of the conductive plate 204 that comes into contact with the fork plug 205 is plated with silver.

[0155] 10 is a diagram showing the configuration of a semiconductor device testing apparatus according to the present invention. A connection structure 218a is inserted into an opening 216a of a partition wall 217, and a connection structure 218b is inserted into an opening 216b of the partition wall 217.

[0156] 23 and 24, it goes without saying that the connecting structure 218 may be slid into the slide groove 325 of the support base 323 to be connected to the element terminal 226 of the semiconductor element 117.

[0157] The connection structure 218a is connected to an element terminal 226a of the transistor 117, and the connection structure 218b is connected to an element terminal 226b of the transistor 117. A circulating water pipe 135 is incorporated into the heating / cooling plate .

[0158] A connector 202 is connected to a terminal of the transistor 117, and a signal wiring 222 connected to the connector 202 is connected to a sample connection circuit 203. A signal wiring 235 of the sample connection circuit 203 is connected to a device control circuit board 209 via a connector 208.

[0159] 10 etc., fork plug 205 and conductive plate 204 are brought into contact by inserting fork plug 205 through opening 216 in partition wall 214. At the time of contact, the U-shaped portion of fork plug 205 is expanded by conductive plate 204, and a firm contact is made.

[0160] 9 shows a layout diagram of each component of the semiconductor device testing apparatus of the present invention. The housing 210 of the semiconductor device testing apparatus is separated into three sections. The lower part of the housing is separated into chamber A and chamber B. The power supply unit 132 is placed in chamber A. Chamber A and chamber B are separated by a partition wall 215.

[0161] Each chamber is shielded. The power supply 132, switch circuit board 201, and transistor 117 generate large noises as they repeatedly operate and deactivate. The noise can cause malfunctions in the circuit boards, etc., so the shielding prevents this. The shielding is achieved by placing conductive plates, metal plates, and metal films around each chamber.

[0162] In the C1 room, the heating / cooling plate 134, the circulating water pipe 135, etc. shown in FIG. 8 are arranged, and the transistor 117 to be tested is arranged on the heating / cooling plate 134.

[0163] A partition wall 214 is formed between chamber C1 and chambers A and B. A water leakage sensor (not shown) is arranged around the heating and cooling plate in chamber C1. If the circulating water (cooling medium) or the like leaks, the water leakage sensor will activate and stop the semiconductor device testing equipment or issue an alarm.

[0164] In addition, drainage grooves are formed around the heating and cooling plate, and when circulating water (cooling medium) leaks from the heating and cooling plate, the circulating water (cooling medium) flows into the drainage grooves and is discharged outside the semiconductor element testing equipment. As described above, the partition wall 214 is configured so that even if the circulating water pipe 135 is damaged, the circulating water (cooling medium) and the like will not leak into the lower chambers A and B.

[0165] A partition wall 215 is formed between chamber A in which the power supply unit 132 is disposed and chamber B in which the drive circuit system is disposed. Electrostatic shielding plates are disposed in partition walls 214, 215, and 217 to shield noise from the power supply unit 132 and prevent the noise from being applied to the drive circuit system in chamber B.

[0166] In the embodiment of the present invention, the fork plug 205 is inserted from chamber C2 and connected to the conductive plate 204 in chamber B. It is easy to push the fork plug 205 from the top to the bottom. However, the present invention is not limited to this. For example, the conductive plate 204 may be placed in chamber C2, and the fork plug 205 may be inserted from chamber B to establish an electrical connection. Furthermore, the connection structure 218 is inserted from the chamber C2, and the element terminals 226 of the semiconductor element 117 and the connection structure 218 are connected.

[0167] 9 and other figures, connection structure 218 is inserted from chamber C2 into chamber C1 and electrically connected to element terminal 226 of transistor 117. Furthermore, fork plug 205 is inserted from chamber C2 into chamber B and electrically connected to fork plug 205 and conductor plate 204. Transistor 117 is fixed to heating / cooling plate 134, and switch circuit board 201 is fixed at the position of motherboard 207. Connection structure 218 and fork plug 205 are electrically connected by connection wiring 211.

[0168] The position of opening 216 can be selected using connection structure 218 to select transistor 117 to be tested. By selecting the opening into which fork plug 205 is inserted, it is possible to easily select switch circuit board 201 to be controlled and change the test method and test conditions. Therefore, by using connection structure 218 and fork plug 205, the present invention makes it possible to easily select transistor 117 and change the test method, etc., in a short time.

[0169] The partitions 214, 215, and 217 may be wall-like structures, plate-like structures, film-like materials, mesh-like materials, wire mesh-like materials, etc. One example is phenolic resin (phenolic resin, phenol-formaldehyde resin, phenolic resin). The partitions may be any material that separates the first and second parts of the semiconductor device testing apparatus.

[0170] 26, a connector 213 is attached to a motherboard 207. A control circuit board 111, a device control circuit board 209, and a switch circuit board 201 are attached to the connector of the motherboard 207. The number of switch circuit boards 201 to be prepared according to the number of transistors 117 to be tested can be easily realized by changing the number of switch circuit boards 201 attached to the motherboard 207.

[0171] Temperature information Tj, voltage Vi, a control signal for the variable resistance circuit 125, a control signal for the constant current circuit 118, etc. are transmitted to the motherboard 207. In addition, power supply wiring and ground wiring for each circuit are formed and supplied to each circuit board via a connector 213. The conductive plate 204 is disposed so as to protrude from the switch circuit board 201. A fork plug 205 is connected to this protruding portion.

[0172] Fork plug 205a is connected to conductor plate 204a of switch circuit board 201a. Power supply wiring 212 is connected to switch circuit board 201a through opening 216 in partition wall 215. Fork plug 205d is connected to conductor plate 204c of switch circuit board 201b. Power supply wiring 212 is connected to switch circuit board 201b through opening 216 in partition wall 215. Fork plug 205b is connected to conductor plate 204b of switch circuit board 201a. Power supply wiring 212 is connected to switch circuit board 201a through opening 216 in partition wall 215.

[0173] 11 and other drawings, a switch circuit 124a is disposed between the conductor plates 204d and 204c of the switch circuit board 201b, and short-circuits the conductor plates 204d and 204c. By short-circuiting the conductor plates 204d and 204c, the current Ia output from the current power supply circuit 121a is supplied to the transistor 117 as the test current Id.

[0174] Switch circuit 124b is disposed between conductive plates 204a and 204b of switch circuit board 201a, and when switch circuit 124b is turned on, conductive plates 204a and 204b are short-circuited. When this short-circuit occurs, current Ia output from current power supply circuit 121a flows to ground as discharge current Im, and the channels of transistor 117 are short-circuited. When the channels are short-circuited, no overvoltage or overcurrent is applied to transistor 117.

[0175] Fork plug 205 is connected to conductive plate 204. Fork plug 205c is connected to conductive plate 204b. Fork plug 205b is connected to conductive plate 204a. Fork plug 205e is connected to conductive plate 204d. Fork plug 205d is connected to conductive plate 204c.

[0176] Figure 25 is a configuration diagram of fork plug 205. Figure 25(a) shows a state in which conductor plate 204 attached to switch circuit board 201 and fork plug 205 are coupled together. Figure 25(b) shows a coupled state of conductor plate 204 and fork plug 205 when the cross section taken along line AA' in Figure 25(a) is viewed from the direction of the arrow.

[0177] The fork plug 205 is made of a metal such as aluminum. The surface is nickel-plated and then silver-plated. The fork plug 205 has a threaded groove, allowing the connection wiring 211 to be attached to the fork plug 205 with a connection bolt 219.

[0178] The convex contact portion 220 is made of phosphor bronze or copper alloy. The surface of the contact portion 220 is silver-plated. The insertion force of the fork plug 205 into the conductive plate 204 is set to be 40 to 60 N.

[0179] Platinum, gold, silver, tungsten, copper, nickel, or alloys of these may be used for the contact portion 220. It is also preferable to use silver-oxide contact materials (Ag+ZnO, Ag+SnO2, Ag+SnO2In2O3, Ag+, Ag+SnO2Sn2Bi2O7).

[0180] Although two switch circuit boards 201 are shown in FIG. 26, two or more switch circuit boards 201 may be required depending on the number of transistors 117 to be tested, and the switch circuit boards 201 are connected to connectors 213 on the motherboard 207.

[0181] As shown in Figure 10, fork plug 205c is inserted through opening 216 in partition wall 214 provided between chamber C2 and chamber B, and conductor plate 204b is connected to fork plug 205c. Chamber C1 contains transistor 117 to be tested and heating / cooling plate 134, while chamber B contains a drive circuit for testing transistor 117 and other components. Because chambers C1, C2, and B are separated by partition wall 214, even if refrigerant leaks from heating / cooling plate 134, it will not leak into chamber B. A water leakage sensor (not shown) is located around heating / cooling plate 134. In addition, a groove is formed to drain the refrigerant out of the testing device in the event that it leaks out. An electrostatic shield plate is arranged on the partition wall 214 to prevent the drive circuit system in the chamber B from malfunctioning due to noise generated from the transistor 117 .

[0182] The current flowing through the transistor 117 to be tested is large, at several hundred amperes, and therefore the thickness of the connection wiring 211 used is also large. As a result, the connection wiring 211 does not slide smoothly and is hard, making it difficult to change the connection of the connection wiring 211.

[0183] The semiconductor device testing apparatus of the present invention can be connected to the switch circuit board 201 by means of the fork plug 205 inserted from the C2 chamber. Therefore, changing the connection with the switch circuit board 201 to be used depending on the test conditions of the transistor 117 does not require changing the wiring of the connection wiring 211, but only requires changing the position of the opening 216 into which the fork plug 205 is inserted. Also, the switch circuit board 201 only requires changing the position of the connector 213 that connects to the motherboard 207.

[0184] 9, 11, 29, 30, etc., the connection wiring 211b connected to the transistor 117 is connected to the fork plug 205c. The connection wiring 211a connected to the transistor 117 is connected to the fork plug 205e.

[0185] Even if there are a plurality of transistors 117 to be tested, a single switch circuit board 201a will suffice as long as the output current Ia of the current power supply circuit 121a is made to flow as Im to the ground line.

[0186] The number of switch circuit boards 201b required is equal to the number of transistors 117 to be tested. For example, if there are 12 transistors 117 to be tested, it is preferable to prepare 12 switch circuit boards 201b. It is also cost-effective to make switch circuit boards 201a and 201b have the same specifications.

[0187] A plurality of transistors or the like are mounted on the switch circuit board 201 as the switch circuits 124. The greater the number of switch circuits 124, the smaller the impedance that shorts between the two conductor plates 204. The number of switch circuits 124b mounted on the switch circuit board 201a is determined so that the on-resistance of the switch circuit 124b is smaller than the on-resistance of the transistor 117 to be tested.

[0188] 27 and 28 show the state in which the fork plug 205 is inserted into the opening 216 of the partition wall 214. Fig. 27 is a view from the front side of the partition wall 214, and Fig. 28 is a view from the back side of the partition wall 214.

[0189] 27, fork plug 205b and multiple fork plugs 205c (fork plugs 205c1 to 205c5) are connected to conductive plate 204b, for example. Fork plug 205e1 is connected to conductive plate 204d1, fork plug 205e2 is connected to conductive plate 204d2, fork plug 205e3 is connected to conductive plate 204d3, fork plug 205e4 is connected to conductive plate 204d4, and fork plug 205e5 is connected to conductive plate 204d5.

[0190] A transistor 117 to be tested is connected between each of fork plugs 205c and 205e. The number of switch circuit boards 201b equal to the number of transistors 117 to be tested is mounted on motherboard 207. Openings 216 are formed corresponding to the positions of conductive plates 204 of switch circuit boards 201b.

[0191] Although not shown, large noise is generated by turning on and off the switch circuits 124 of the switch circuit boards 201. As a countermeasure, a metal plate is placed between the switch circuit boards 201 and is earthed.

[0192] In each drawing, one switch circuit 124 is shown on switch circuit board 201. However, in reality, a plurality of switch circuits 124 are arranged between conductor plates 204. By arranging a plurality of switch circuits 124 on switch circuit board 201, it is possible to short-circuit between conductor plates 204 (for example, between conductor plate 204c and conductor plate 204e) with low resistance.

[0193] The heat generated by the switch circuit 124 is dissipated to the conductor plate 204. A heat sink is also attached to the switch circuit 124. The ground terminal of the switch circuit 124 is connected to the ground of the switch circuit board 201, and heat is also dissipated via the copper foil of the ground.

[0194] As shown in Fig. 9, two conductive plates 204 are attached to a switch circuit board 201, and a switch circuit 124 is arranged so as to short-circuit the two conductive plates 204. Also, Fig. 29 is an equivalent circuit diagram of the semiconductor device testing apparatus of the present invention in the first embodiment.

[0195] 9, 10, 11, etc., conductive plates 204a and 204b are attached to switch circuit board 201a. Conductive plate 204a is connected to fork plug 205a. Fork plug 205a is connected to the output terminal of current power supply circuit 121a. Conductive plate 204b is connected to fork plug 205b. Fork plug 205b is connected to the ground terminal of current power supply circuit 121a.

[0196] When the switch circuit 124b is turned on, the output terminals of the current power supply circuit 121a are short-circuited, and a short-circuit current Im flows. Therefore, the output current of the current power supply circuit 121a is not supplied to the transistor 117. When the switch circuit 124b is open, the output current Ia of the current power supply circuit 121a is supplied to the transistor 117.

[0197] Conductive plates 204c and 204d are attached to switch circuit board 201b. Conductive plate 204c is connected to fork plug 205d. Fork plug 205d is connected to the output terminal of current power supply circuit 121a. Conductive plate 204d is connected to fork plug 205e. Fork plug 205e is connected to the collector terminal of transistor 117 to be tested.

[0198] 9, 10, 27, 28, etc., fork plug 205e is inserted into opening 216 opened in partition wall 214 and coupled to conductive plate 204d. Also, fork plug 205c is inserted into opening 216 opened in partition wall 214 and coupled to conductive plate 204d.

[0199] A switch circuit 124a is disposed on the switch circuit board 201b, and when the switch circuit 124a is turned on, the output current Ia from the current power supply circuit 121a is supplied to the transistor 117 as a test current Id to be passed through the transistor 117.

[0200] The switch circuit board 201b is placed in the B chamber of the housing 210, and the switch circuit board 201b is electrically connected to the transistor 117 to be tested by a fork plug 205 inserted from the C2 chamber through the opening 216 in the partition wall 214.

[0201] As shown in Figures 9, 10, 27, 28, etc., fork plug 205 and conductor plate 204 are connected. In Figure 10, switch circuit boards 201 are shown arranged in parallel. In reality, switch circuit boards 201 are inserted in parallel into a board rack and arranged. A mother board is arranged on the side of the board rack, and control signals to each circuit board are applied from the mother board. The semiconductor device testing method of the present invention will be described below. Figures 29, 30 and 31 are explanatory diagrams of the semiconductor device testing method of the present invention in the first embodiment.

[0202] A constant current circuit 118 supplies a constant current Ic to the diode Di of the transistor 117. An operational amplifier circuit 116 buffers and outputs the terminal voltage Vi of the diode Di. The terminal voltage Vi is applied to a temperature measurement circuit 115, which determines temperature information Tj of the transistor 117 from the terminal voltage Vi and transfers it to the controller 111. The temperature information is output from a connector 213 of the device control circuit board 209 to the motherboard 207 and then sent to the control circuit board 111 (see FIG. 26, etc.).

[0203] The gate driver circuit 113 outputs an on-voltage Vg that turns on the gate of the transistor 117 at a set frequency for a set on-voltage time. As an example, as shown in Figure 31(a), the on-off cycle of the transistor 117 is tcycle, the on time is ton, and the off time is toff.

[0204] 31(a), the transistor 117 is controlled to be turned on and off. The gate driver circuit 113 is controlled by the gate signal control circuit 112. The current power supply circuit 121 a outputs a constant current Ia, which is supplied as Id to the transistor 117 .

[0205] The transistor 117 is turned on and off by the Vgs signal voltage output from the gate driver circuit 113, and a current Id flows between the channels of the transistor 117 while the transistor 117 is on.

[0206] The gate driver circuit 113 has an internal variable resistance circuit 125. The value of the variable resistance circuit 125 is configured so that it can be set to a predetermined value or in steps between 0 (Ω) and 500 (Ω). The value of the variable resistance circuit 125 may be set by a control signal from the control circuit board (controller) 111 while observing the waveform of the gate terminal g.

[0207] A resistor R (not shown) may be disposed between the gate terminal g and the emitter terminal e or collector terminal c of the transistor 117. By adjusting the value of the resistor R, the slope angles of the rising and falling voltage waveforms of the gate signal can be adjusted.

[0208] When the value of the variable resistance circuit 125 is large, the slope of the rising / falling waveform of the gate signal of the transistor 117 applied to the gate terminal of the transistor 117 becomes gentler.

[0209] On the other hand, if the resistance value of the variable resistance circuit 125 is small, the slope of the rising / falling waveform of the gate signal becomes steeper. By changing the resistance value of the variable resistance circuit 125 or setting it to a predetermined value, the on-time of the transistor 117 can be adjusted.

[0210] The gate driver circuit 113 can set the slope of the rising waveform (rise time Tr) and the slope of the falling waveform (fall time Td) of the gate voltage applied to the gate terminal g of the transistor 117. By separately adjusting the rise time Tr and the fall time Td, the on time of the transistor 117 can be adjusted as desired.

[0211] The resistance value of the variable resistance circuit 125 is set by the control circuit board (controller) 111. The setting is not limited to a constant value. The slope of the rising waveform (rise time Tr) and the slope of the falling waveform (fall time Td) of the gate driver circuit 113 may be changed. The resistance value at the rising edge and the resistance value at the falling edge of the gate signal may also be changed. The resistance value may also be variably controlled in real time. By variably controlling the variable resistance circuit 125, the on-time of the transistor 117 is stabilized.

[0212] If the resistance value at the rising edge of the gate signal is reduced, the waveform of the on-voltage applied to the gate terminal of transistor 117 becomes steeper, quickly turning on transistor 117. If the resistance value at the rising edge of the gate signal is increased, the waveform of the on-voltage applied to the gate terminal of transistor 117 becomes gentler, and transistor 117 turns on more slowly.

[0213] If the resistance value at the falling edge of the gate signal is reduced, the waveform of the on-voltage applied to the gate terminal of transistor 117 becomes steeper, quickly turning off transistor 117. If the resistance value at the falling edge of the gate signal is increased, the waveform of the on-voltage applied to the gate terminal of transistor 117 becomes gentler, and transistor 117 turns off more slowly.

[0214] As described above, it is possible to control, adjust, or set the value of the variable resistance circuit connected to the gate terminal of the transistor 117 or the rise time / fall time of the gate driver circuit 113. Therefore, as a function of the gate driver circuit 113, it is possible to change or modify the inrush current Is and surge voltage Vs generated in the transistor 117.

[0215] It goes without saying that the operation of the transistor 117 can not only control the on-voltage of the gate terminal of the transistor 117, but also change or set the value of the constant current Id or voltage Vm supplied to the transistor 117 by the current power supply circuit 121.

[0216] The variable resistance circuit 125 of the gate driver circuit 113 is controlled by a control circuit board (controller) 111. The cycle time tcycle, on time ton, or off time toff of the gate signal output by the gate driver circuit 113 shown in FIG. 31 is controlled by a gate signal control circuit 112, and the gate signal is applied to the gate terminal of the transistor 117. The gate signal control circuit 112 is also controlled by the control circuit board (controller) 111.

[0217] 11, 29, 30, etc., the resistance value of the variable resistance circuit 125 of the gate driver circuit 113 is variable, but this is not limiting. For example, it goes without saying that the variable resistance circuit 125 may be an external resistor, and the resistor may be connected to the gate terminal of the transistor 117 by a connector (not shown) or the like. The value of the resistor to be connected is set by observing the waveform of the gate terminal of the transistor 117 and the waveform of the channel current Id.

[0218] 11, 29, 30, etc., a constant current circuit 118 is connected between the collector terminal c and the emitter terminal e of a transistor 117. The constant current circuit 118 passes a predetermined constant current Ic. The constant current Ic is used to monitor the temperature of the transistor 117.

[0219] Since the present specification will be described using an IGBT as an example, the terminals of the transistor 117 are a gate terminal g, a collector terminal c, and an emitter terminal e. In the case of a MOS transistor 117, the terminals of the transistor 117 are a gate terminal g, a drain terminal d, and a source terminal s.

[0220] A body diode or a channel diode Di is formed in the transistor 117. Note that the diode Di may be a diode of a separate semiconductor chip mounted on the semiconductor chip on which the transistor 117 is formed.

[0221] The diode Di may be a diode (parasitic diode) formed secondarily when the transistor 117 is formed. The parasitic diode is formed secondarily due to the layer structure of the transistor 117. The diode Di is formed near the channel portion of the transistor 117 due to its structure.

[0222] The diode Di may be any element that does not operate when the transistor 117 is operating. For example, it is not limited to a diode, and it goes without saying that a transistor connected as a diode may also be used.

[0223] Furthermore, the device is not limited to a semiconductor such as a diode, but may be a device such as a resistor. A constant current Ic is applied to a device such as a resistor to measure the terminal voltage of the resistor. This voltage is measured as voltage Vi.

[0224] As described above, the element for acquiring temperature may be not only a semiconductor device, but also a resistor, etc. In other words, any device that can acquire a voltage value by passing a current through it, or a device that can acquire a current value by applying a voltage, can be used.

[0225] The resistance of diode Di changes as transistor 117 heats up. When a constant current Ic flows through diode Di, the voltage across the terminals of diode Di changes in proportion to the change in the resistance of diode Di. By monitoring or measuring the voltage across the terminals, the temperature or temperature change of transistor 117 can be determined. In order to monitor the temperature of the transistor 117 from the voltage of the diode Di, it is necessary to obtain the temperature coefficient in advance.

[0226] The temperature coefficient is measured by setting the transistor 117 to a predetermined temperature in a thermostatic oven, passing a constant current Ic through the diode Di, and measuring the terminal voltage of the diode Di. The terminal voltage of the diode with respect to temperature can be obtained by varying the predetermined temperature and measuring the terminal voltage of the diode Di. Therefore, the temperature coefficient K of the transistor 117 can be calculated from the terminal voltage of the diode Di with respect to temperature.

[0227] The temperature coefficient K may differ for each production lot of transistor 117, but generally it is a constant value for each production lot. Therefore, if you extract a transistor 117 to be tested from each production lot and calculate its temperature coefficient K, you can use this to calculate the temperature coefficient K for other transistors 117.

[0228] To obtain the temperature coefficient K with high accuracy, the temperature coefficient K of each transistor 117 is measured and tested individually, even for the same lot. Measurement of the temperature coefficient K is not limited to using a thermostatic oven. For example, the temperature coefficient K can be obtained by changing the temperature of the water flowing through the heat sink on which the transistor 117 is mounted.

[0229] During testing, a test current Id is intermittently applied to the transistor 117. Immediately after the test current Id is turned off, or after a short, predetermined time has elapsed since the test current Id was turned off, a constant current Ic for temperature measurement is supplied from the constant current circuit 118.

[0230] To prevent the constant current Ic from heating the transistor 117 or to eliminate the influence of the constant current Ic, the constant current Ic is set to a current value that is sufficiently smaller than the constant current Id that flows through the channel of the transistor 117. The constant current Id is set to a current that does not generate heat that would affect temperature measurement.

[0231] Specifically, the constant current Ic is set to 1 / 1000 or less of the current Id passed through the transistor 117 during testing. Preferably, the current Ic passed through the transistor 117 is set to 1 / 10 to 1 / 10 of the current Id. The constant current Ic is set to 0.1 mA to 100 mA.

[0232] The channel current Id is changed, and the diode Di voltage (the voltage between the collector and emitter terminals of the transistor 117) is measured to determine the temperature coefficient K. The determined temperature coefficient K is stored in the temperature measurement circuit 115.

[0233] When measuring temperature, if the diode Di is formed on the same chip as the transistor 117, the saturation voltage Vn may change depending on the gate voltage Vgs. It is preferable that the gate voltage Vgs be zero (0) voltage or a negative voltage (minus voltage).

[0234] 8, based on the temperature information Tj, the control circuit board (controller) 111 controls the chiller 136. The chiller 136 adjusts the temperature of the circulating water (circulating solution), and adjusts the temperature of the heating / cooling plate .

[0235] In the above embodiment, the temperature coefficient K is calculated in advance, but the semiconductor testing method of the present invention is not limited to this. Temperature information Tj of the transistor 117 is calculated from the temperature coefficient and the diode terminal voltage, etc. The transistor 117 is placed in close contact with the heating / cooling plate 134 , and the temperature of the heating / cooling plate 134 is configured to be approximately the same as that of the transistor 117 .

[0236] The control circuit board (controller) 111 controls the chiller 136 to set the temperature of the heating / cooling plate 134 to a predetermined temperature, applies a constant current Ic to the transistor 117, and measures the terminal voltage of the diode Di.

[0237] From the measurement results, the temperature coefficient K is calculated. The temperature of the heating / cooling plate 134 is set to a plurality of temperatures, the temperature coefficient K at each temperature is calculated, and the accuracy of the temperature coefficient value is improved from the results.

[0238] The temperature coefficient K is determined by heating the transistor 117 to a predetermined temperature using the heating / cooling plate 134, passing a constant current Ic through the diode Di, and measuring the terminal voltage. The terminal voltage of the diode Di relative to temperature can be obtained by varying the predetermined temperature and measuring the terminal voltage of the diode Di. Therefore, the temperature coefficient K of the transistor 117 can be calculated from the terminal voltage of the diode Di relative to temperature.

[0239] When testing the transistor 117, the constant current Ic is passed through the diode Di when the channel current Id is not flowing. In other words, when the transistor 117 is not turned on, the constant current Ic is passed and the voltage across the diode Di is measured.

[0240] The operational amplifier circuit (buffer circuit) 116 outputs the terminal voltage Vi (terminal c-terminal e) of the diode Di. Note that the operational amplifier circuit 116 is not limited to one configured with an operational amplifier element. Any circuit having high input impedance and low output impedance may be used. The temperature measurement circuit 115 obtains temperature information Tj of the transistor 117 being tested from the stored temperature coefficient K and voltage Vi.

[0241] The obtained temperature information Tj is sent to a control circuit board (controller) 111. When the temperature information Tj becomes equal to or exceeds a predetermined set value, the control circuit board (controller) 111 determines that the transistor 117 is in a predetermined stress state or a deteriorated state, and changes the control of the test or stops the test.

[0242] In most cases, the parts of the transistor that deteriorate during testing are the junctions within the transistor 117. The semiconductor itself does not deteriorate, but the junctions (bonding, die bonding, etc.) of the transistor 117 deteriorate, causing the resistance value of the junctions to increase. As the resistance value increases, the voltage Vce increases, generating heat and raising the temperature of the transistor 117.

[0243] When a semiconductor deteriorates, it is often the deterioration of the gate oxide film (insulating film) of transistor 117. When the gate oxide film deteriorates, the oxide film (insulating film) is short-circuited, and the voltage Vce drops. Alternatively, transistor 117 is turned off, no current flows through transistor 117, and the voltage Vce rises to the maximum value of the power supply voltage.

[0244] At the start of the test, the temperature information Tj varies between the minimum temperature T1 and the maximum temperature T2. When stress is applied to the transistor 117 by the test, the Vce voltage of the transistor 117 changes, and the temperature information Tj normally changes in the increasing direction. Therefore, as shown in FIG. 32(c), the minimum temperature rises above temperature T1, and the maximum temperature approaches temperature information Tm (Tjmax). In the semiconductor testing method of the present invention, the test is stopped under any of the following conditions: When the temperature information Tj is outside the specified range. When the channel voltage Vce is outside the specified voltage range. - If the thermal resistance is outside the specified range.

[0245] In the embodiments of Figures 11, 29, 30, etc., switch circuit Ssa124a and switch circuit Sab124b use the symbols for switch circuits. Any element can be used as the switch circuit for switch circuit Ssa124a and switch circuit Sab124b as long as the resistance (on resistance) when closed (on) is small. Examples include transistors, mechanical relays, phototransistors, and photodiode switches.

[0246] Fig. 30 is an equivalent circuit diagram of a semiconductor device testing apparatus according to a first embodiment of the present invention. In this embodiment, the switch circuits Ssa and Sab use power MOSFETs 124 as shown in Fig. 30. The voltage (Vsd) between the channels of a power MOSFET is small.

[0247] It should be noted that the switch circuits may be configured using elements other than power MOSFETs. Needless to say, the switch circuits Ssa and Sab may be configured using not only power MOSFETs but also power transistors, etc. Other examples include electromagnetic relays and electromagnetic switches.

[0248] The channel voltage (Vsdb) of the power MOSFET 124b when it is on is selected to be equal to or lower than the channel voltage (Vsda) of the power MOSFET 124a when it is on. In other words, the channel voltage (Vsdb) of the power MOSFET 124b when it is on is set to be smaller than the channel voltage (Vsda) of the power MOSFET 124a when it is on. This is to completely short-circuit the terminals of the current power supply circuit 121a when the switch circuit 124b is turned on, allowing the current Im to flow stably. The above also applies when the switch circuit 124 is a power transistor, etc. In the case of the power transistor 124, the channel voltage is Vce. When the switch circuit 124a is turned on, the current Ia output from the current power supply circuit 121a can be supplied to the transistor 117 as the test current Id.

[0249] 31 is an explanatory diagram of a method for testing a semiconductor device according to a first embodiment of the present invention. In FIG. 31, Vgs is a gate signal applied to the gate terminal of the transistor 117 to be tested. Id is a current passed through the transistor 117 during testing. For ease of explanation, it is assumed that a constant current Ia passes through the transistor 117 when it is on.

[0250] 31(c), St1 is a timing signal for causing a current Ic to flow through the diode Di, and when St1 is at H level, a current flows through the diode Di of the transistor 117. An operational amplifier circuit 116 acquires the voltage across the diode Di, and a temperature measurement circuit 115 converts the voltage across the terminals into temperature information Tj. The temperature information Tj is sent to a control circuit board (controller) 111, which then tests the transistor 117 (semiconductor element 117) in accordance with the temperature information Tj.

[0251] Id is the current flowing through the transistor 117 to be tested, and is the current output from the current power supply circuit 121. St1 and St2 are the time for which the measurement current is passed through the temperature measurement diode or the time for which the temperature is measured. In FIG. 31(e), Ssa is the on / off signal of the switch circuit 124a, and in FIG. 31(f), Sab is the on / off signal of the switch circuit 124b.

[0252] 31(g), Vce indicates the voltage at the terminal c of the transistor 117 (channel voltage of the transistor 117), and temperature information Tj indicates the measured temperature change of the transistor 117.

[0253] As shown in FIG. 31(a), a gate signal Vgs is applied from the gate driver circuit 113 to the gate terminal g of the transistor 117. The gate signal Vgs has a cycle time tcycle and an on-time ton. The cycle time tcycle and the on-time ton can be set to any values ​​by the gate signal control circuit 112. The on-voltage Vg can also be set to any voltage.

[0254] St2 in Figure 31(d) is a timing signal for causing a current Ic to flow through the diode Dsa and the diode Dsb in the embodiment shown in Figure 34. When St2 is at H level, a current flows through the diode Dsa or Dsb of the transistor 117. In this case, a constant current Ic is caused to flow through a device (diode) independent of the transistor 117 to acquire temperature information Tj.

[0255] An operational amplifier circuit 116 acquires the voltage across the diode Dsa or Dsb, and a temperature measurement circuit 115 converts the voltage across the terminals into temperature information Tj. The temperature information Tj is sent to a control circuit board (controller) 111, which then tests the transistor 117 based on the temperature information Tj. Matters related to St2 will be described with reference to FIG. 34, etc.

[0256] For ease of understanding, the measured temperature information Tj will be described as varying between T1 and T2 as shown in Figure 31(h). The temperature information Tj increases when current is applied to the transistor 117, and decreases when the current stops flowing. The temperature information Tj also varies with changes in the characteristics of the transistor 117.

[0257] In Figure 31(e), Ssa shows the timing of the on / off control signal for the switch circuit Ssa. When Ssa is Von, the switch circuit Ssa is closed (on). When Ssa is 0, the switch circuit Ssa is open (off), and the application of current or voltage is cut off.

[0258] Figure 31(f) Ssb shows the timing of the on / off control signal for the switch circuit Ssb. When Ssb is Von, the switch circuit Ssb is closed (on). When Ssb is 0, the switch circuit Ssb is open (off).

[0259] In Figure 31(g), Vce is the channel voltage (voltage between the emitter terminal and collector terminal) of transistor 117. As transistor 117 is turned on and off, surge voltages and surge currents occur, and the Vce waveform changes in a complex manner over time as the on-resistance of transistor 117 changes. In addition, the Vce waveform of transistor 117 changes as current Ic flows through diode Di.

[0260] In this specification and drawings, for ease of explanation or drawing, it is assumed that when transistor 117 is on, it is voltage Vn, and when the transistor is off, it is voltage Ve. A gate signal is applied to the gate terminal of the transistor 117 to be tested with a period tcycle, an on time ton, and an off time toff.

[0261] When the transistor 117 is an N-channel transistor, the gate signal Vgs has a ground voltage of 0 (V) as its off voltage and Vg as its on voltage. When the transistor 117 is a P-channel transistor, the potential of the on voltage and the potential of the off voltage are changed.

[0262] During a period tn2 before turning on the transistor 117, the Vt voltage is set to a voltage more negative than the off voltage, and during a period tn1 after turning off the transistor 117, the Vt voltage is set to a voltage more negative than the off voltage. The Vt voltage is a voltage lower than 0 (V) and higher than -4 (V). Therefore, Vt is a voltage equal to or higher than -4 (V) and lower than 0 (V).

[0263] If the transistor 117 is made of SiC, the off-voltage is set to the Vt voltage, and if the transistor 117 is made of IGBT, the off-voltage is set to 0 V. As described above, the semiconductor device testing device of the present invention is configured so that the off-voltage supplied to the transistor 117 can be changed depending on the type of transistor 117 to be tested.

[0264] When the Vt voltage is applied, St1 (St2) is set to H level to measure the temperature of the transistor 117. While the Vt voltage is being applied, a constant current Ic is passed through the diode Di. Also, while St1 (St2) is set to H level, the constant current Ic is passed.

[0265] By applying the Vt voltage to the gate terminal of the transistor 117, the off state of the transistor 117 is stabilized, and the temperature information Tj can be measured stably. Furthermore, noise is less likely to be introduced when measuring the temperature information Tj, improving the measurement accuracy of the temperature information Tj.

[0266] By applying the Vt voltage to the gate terminal of the transistor 117, the leakage current of the transistor 117 is reduced, the measurement accuracy of the Vi voltage is improved, and the measurement is stabilized.

[0267] The gate signal Vgs is set to the voltage Vt during the times tn1 and tn2. For example, the times tn1 and tn2 are between 0.2 ms and 2 ms. The transistor 117 is turned off at 0V.

[0268] Therefore, three voltages, Vg, 0 (V), and Vt, are applied to the gate terminal g of the transistor 117. During the period when Vt is being applied, a current is passed through the diode Di of the transistor to measure the temperature information Tj.

[0269] When the constant current Ic is made to flow through the diode Di, the switch circuit Ssa is turned off to prevent the current from the current power supply circuit 121 a from being applied to the transistor 117 .

[0270] The terminal voltage of the diode Di is obtained by passing a constant current Ic through the diode Di, and the operational amplifier circuit 116 outputs a voltage Vi corresponding to the terminal voltage. The voltage Vi is input to a temperature measurement circuit 115, which determines temperature information Tj corresponding to the temperature of the transistor 117.

[0271] The temperature information Tj is transferred to a control circuit board (controller) 111, which controls the test of the transistor 117 (semiconductor element 117) by continuing, stopping, changing conditions, etc., of the test of the transistor 117 based on the temperature information Tj.

[0272] 31(e) Ssa is a timing signal for controlling the on / off of the switch circuit 124a, and FIG.31(f) Ssb is a timing signal for controlling the on / off of the switch circuit 124b.

[0273] The switch circuit 124a is turned on with a delay of tm2 after the Vgs signal of the transistor 117 becomes Vg. The time tm2 can be changed and set by the control circuit board (controller) 111.

[0274] Switch circuit 124b turns on tb2 hours before switch circuit 124a turns on. Switch circuit 124b remains on until tb1 hours after switch circuit 124a turns on. The tb2 and tb1 times can be changed independently. The setting of tb1 is particularly important. The time tb1 is set or changed appropriately by observing the waveform of the Vce voltage of the transistor 117.

[0275] The switch circuit 124a is turned off tm1 before the Vgs signal of the transistor 117 reaches Vt. The control circuit board (controller) 111 is configured to change and set the tm1 time.

[0276] Switch circuit 124b turns on a time ta2 before switch circuit 124a turns off. Switch circuit 124b remains on until ta1 after switch circuit 124a turns off. The ta2 and ta1 times can be changed independently. The setting of ta1 is particularly important. The time ta1 is set or changed appropriately by observing or measuring the waveform of the Vce voltage of the transistor 117.

[0277] When the switch circuit Ssb is turned on, the output terminal of the current power supply circuit 121a is short-circuited to the ground (ground line), and the charge is discharged. As a result of the charge being discharged, the terminal voltage of the current power supply circuit 121a becomes 0 (V) (ground voltage). In addition, the current Ia output by the current power supply circuit 121a flows to the ground as a current Im. Therefore, the current Ia is not applied to the transistor 117, and the collector voltage of the transistor 117 does not rise.

[0278] The time tb2 is set by observing or measuring the time when the output voltage of the current power supply circuit 121a becomes 0 (V) or close to 0 (V), or the time when the output voltage of the current power supply circuit 121a becomes lower than the collector voltage of the transistor 117.

[0279] At the time when the above voltage relationship reaches a predetermined value (after tb2), the switch circuit 124a is turned on to apply the current Ia (=Id) from the current power supply circuit 121a. However, since the switch circuit 124b is on at this time, the current Ia (=Id) from the current power supply circuit 121a flows to the ground (ground line) as the current Im via the switch circuit 124b. Therefore, the constant current Id does not flow through the transistor 117. After the switch circuit 124 a is turned on, the switch circuit 124 b is turned off after a time tb1 has elapsed, and the test current Id is supplied to the transistor 117 . The test current Id is supplied to the transistor 117 in synchronization with the switch circuit 124a, as shown in FIG.

[0280] By operating the switch circuits 124a and 124b as described above, the surge voltage Vs or the inrush current Is is not applied to the transistor 117. Alternatively, the surge voltage Vs or the inrush current Is is suppressed, and the transistor 117 can be properly tested.

[0281] When the test current Id to the transistor 117 is stopped, the switch circuit 124b is turned on before the switch circuit 124a is turned off (ta2). The constant current Ia output by the current power supply circuit 121a flows to ground as the current Im via the switch circuit Ssb and is not supplied to the transistor 117.

[0282] The ta2 time is set by observing the time when the output voltage of the current power supply circuit 121a becomes 0 (V) or close to 0 (V), or the time when the output voltage of the current power supply circuit 121a becomes lower than the collector voltage of the transistor 117.

[0283] When the above voltage relationship reaches a predetermined value (after ta2), the switch circuit 124a is turned off. After ta1 has elapsed since the switch circuit 124a was turned off, the switch circuit 124b is turned off.

[0284] By operating or controlling the switch circuits 124a and 124b as described above, the surge voltage Vs or inrush current Is is not applied to the transistor 117. Alternatively, the surge voltage Vs or inrush current Is is suppressed, and the transistor 117 can be properly tested.

[0285] When the constant current Id is supplied to the transistor 117, the temperature information Tj increases. When the constant current Id to the transistor 117 is stopped, the temperature information Tj decreases. The temperature information Tj fluctuates between T1 and T2. When the characteristics of the transistor 117 fluctuate due to the test, the temperature information Tj gradually increases. To apply a constant current Id to the transistor 117, the current power supply circuit 121a is operated to apply the current Id (=Ia) to the transistor 117.

[0286] 11, 29, 30, 32, 34, 35, etc., the resistance value of the variable resistance circuit 125 of the gate driver circuit 113 can also be set. By increasing the resistance value, the rising / falling waveform of the gate signal Vgs can be changed as shown by the dotted line or dashed-dotted line in FIG. 32(a).

[0287] By changing or setting the gate signal Vgs, the current Id flowing through the transistor 117 can also be changed as shown by the dotted line or the dashed line in FIG. 32(b). By changing the rising and falling waveforms of the current Id, it is possible to adjust or suppress surge voltage or inrush current.

[0288] As shown in Figure 32(c), the temperature information Tj changes from the solid line to the dotted line and from the dotted line to the dashed line as the characteristics of the transistor 117 change during the test. The test is stopped when the temperature information Tj reaches the level of Tm. Alternatively, the test is stopped when the rate of change of the temperature information Tj reaches a predetermined value. The test conditions are also changed.

[0289] As shown in Figure 33, when the switch circuit Ssa (switch circuit 124a) is in the off state, the St1 signal is set to H and temperature information Tj is measured. The St1 signal is set to H level when the gate signal is Vt. During the tn2 period, the signal is set to H level during the tc2 period and temperature information Tj is measured. During the tn1 period, temperature information Tj is measured during the tc1 period.

[0290] The temperature information Tj measured during the period tc2 is the temperature information Tj at the time when the transistor 117 is cooled. The temperature information Tj measured during the period tc1 is the temperature information Tj immediately after the current Id to the transistor 117 is stopped. Stopping the test, changing the conditions, changing the control, etc. is determined based on the temperature information Tj measured during the tc2 period and the temperature information Tj measured during the tc1 period.

[0291] If the rate of change of the temperature information Tj measured during the tc1 period is larger than that of the temperature information Tj measured during the tc2 period, or if the difference in absolute value between the temperature information Tj measured during the tc1 period and the temperature information Tj measured during the tc2 period is large, the test is controlled and changed according to the measurement value temperature information Tj.

[0292] If the temperature information Tj measured during the period tc2 differs from the standard value by a predetermined value, it is determined whether there is a problem with the connection state of the transistor 117 or the test equipment, and a decision is made to "not start the test." During the period tc2 or tc1, Vi is measured multiple times to obtain temperature information Tj for Vi.

[0293] The embodiment of Fig. 34 is a semiconductor device testing apparatus according to the second embodiment of the present invention. A transistor 117 in Fig. 34 is provided with a separate diode Ds (diode Dsa, diode Dsb) for temperature measurement. The diode Ds is formed in the same process as the transistor 117.

[0294] In the embodiment of FIG. 34, temperature information Tj is measured at the timing of the St2 signal in FIG. 31(d). When the switch circuit Ssa (switch circuit 124a) is in the off state, the St2 signal is set to H and the temperature information Tj is measured. During the tn2 period, the signal is set to H level during the tc2 period and the temperature information Tj is measured. During the tc1 period, the temperature information Tj may be measured during either the ton period or the tn1 period. The temperature information Tj measured during the tc2 period and the temperature information Tj measured during the tc1 period are averaged to obtain the temperature information Tj.

[0295] During the period tc2 or tc1, Vi is measured multiple times to obtain temperature information Tj for Vi. The operations of other signals or switch circuits in Fig. 31 are the same as or similar to those in the embodiment described with reference to Fig. 11 and the like. In the above embodiment, the temperature information Tj is measured by a diode added to or formed in the transistor 117. In the embodiment of FIG. 34, a diode Ds that is not connected to (is independent of) the transistor 117 is formed.

[0296] The diode Dsa is formed in a direction that allows the constant current Ic to flow. The diode Dsb is formed in a direction that allows the constant current Ic' to flow. The constant current circuit 118 (Pc) generates the constant current Ic and the constant current Ic'.

[0297] Diodes Dsa and Dsb are diodes for measuring temperature. The structures of diodes Dsa and Dsb are similar to or identical to diode Di in FIG. 11 and the like.

[0298] The diodes operate or have the same configuration, except that the diode Di is connected to the terminals (terminals c and e) of the transistor 117, whereas the diodes Dsa and Dsb are not connected to the terminals of the transistor 117 but are connected to independent terminals, and the temperature information Tj of the diode Di is measured at the timing of St1 in Figure 31(c), whereas the temperature information Tj of the diodes Dsa and Dsb is measured at the timing of St2 in Figure 31(d).

[0299] In the embodiment of Figure 34, the diode Ds is separated from the path through which the constant current Id flows. Even when the current Id is flowing through the transistor 117, the constant current Ic can be passed through the diode. Therefore, the time for measuring the temperature information Tj can be freely set. As shown in Figure 31(d), the positions of tc1 and tc2 can be set.

[0300] However, as shown in FIG. 31(d), tc2 is placed or set during the period when the gate signal is Vt. The temperature information Tj measured during tc2 is used as the value before the transistor 117 operates. The period tc1 is preferably immediately before the constant current Id of the transistor 117 is stopped. However, it may also be immediately after the constant current Id is stopped. It is preferable that "immediately before" and "immediately after" are within 1 ms. St2 in FIG. 31(d) is a timing signal for causing the current Ic (or current Ic') to flow through the diode Ds (Dsa, Dsb).

[0301] When St2 is at H level, a current flows through the diode Ds (Dsa, Dsb) of the transistor 117. The operational amplifier circuit 116 acquires the voltage across the diode Ds, and the temperature measurement circuit 115 converts the voltage across the terminals into temperature information Tj.

[0302] The temperature information Tj is sent to a control circuit board (controller) 111, which then performs or stops testing or changes control of the transistor 117 in accordance with the temperature information Tj.

[0303] When St2 is at H level, the constant current circuit 118 supplies the constant current Ic, which flows through the diode Dsa, and the constant current circuit 118 supplies the constant current Ic', which flows through the diode Dsb.

[0304] The constant current Ic and the constant current Ic' are currents of the same magnitude. However, if the threshold voltages of the diodes Dsa and Dsb are different, or if the characteristics of the diodes Dsa and Dsb are different, it is preferable to make the magnitudes of the constant current Ic and the constant current Ic' different.

[0305] An operational amplifier circuit 116 acquires the voltage across the terminals of the diode Dsa or Dsb, and a temperature measurement circuit 115 converts the voltage across the terminals into temperature information Tj. The temperature information Tj is sent to a control circuit board (controller) 111, which then tests a transistor 117 based on the temperature information Tj.

[0306] The temperature information Tj obtained by passing a constant current Ic and the temperature information Tj obtained by passing a constant current Ic' are averaged or weighted to obtain a single value of temperature information Tj. Using this temperature information Tj, the control circuit board (controller) 111 performs or stops testing of the transistor 117 or changes the control. Other matters are the same as or similar to the matters or contents described in this specification and drawings, and therefore will not be described here.

[0307] It goes without saying that the present invention can be modified in various ways without departing from the spirit and scope of the invention, and that the matters or contents described in this specification and drawings can be combined with each other.

[0308] Figure 35 is an explanatory diagram of a semiconductor device testing apparatus according to a third embodiment of the present invention. The difference from Figure 11 is that a diode-connected transistor 117s is placed in the path of a current Id that flows through a transistor 117m to be tested. Other parts are the same, so their explanation will be omitted.

[0309] As an example, transistor 117s is a transistor with the same specifications as transistor 117m to be tested. The gate terminal g2 and emitter terminal e2 of transistor 117s are connected, and transistor 117s can be considered equivalent to a diode. The gate terminal g2 and emitter terminal e2 of transistor 117s are connected to the O terminal of element terminal 226. The collector terminal c2 of transistor 117s is connected to the P terminal of element terminal 226.

[0310] 7, the terminals (gate terminal g2, emitter terminal e2, collector terminal c2) of the transistor 117s are connected to a connector 202b, and the connector 202b is connected to a sample connection circuit 203 via a signal wiring 222b. The terminals (gate terminal g2, emitter terminal e2, collector terminal c2) of the transistor 117s are connected within the sample connection circuit 203.

[0311] When the switch circuit 124b is turned on, a current Im flows, discharging the charge of the current power supply circuit 121a, or the current Ia output by the current power supply circuit 121a flows to the ground via the switch circuit 124b.

[0312] When an inrush current Is flows through the transistor 117m under test, the transistor 117m is destroyed by the inrush current Is or surge voltage Vs. To prevent the inrush current Is or surge voltage Vs from occurring, the on / off control and on / off sequence of the switch circuits 124a and 124b are controlled.

[0313] When the cycle t cycle is shortened to test the transistor 117 m, the switch circuits 124 a and 124 b need to be turned on and off at high speed. In this case, an inrush current Is or a surge voltage Vs may occur depending on the on / off timing of the switch circuit 124.

[0314] If the voltage Vm at the collector terminal of the transistor 117 is higher than the voltage Vp at the output of the current power supply device, the current flows to ground as the current Im, and little or no current flows through the transistor 117m.

[0315] To establish the relationship Vm > Vp, in the embodiment shown in FIG. 35, a diode-connected transistor 117s is placed in the path of current Id. When current flows through transistor 117s, the voltage Vm is increased by the channel voltage of transistor 117s. Therefore, voltage Vp is lower than voltage Vm, and no inrush current is applied to transistor 117m. Transistor 117m will not be destroyed by inrush current Is or surge voltage Vs.

[0316] 36 is an explanatory diagram of a semiconductor device testing apparatus according to a fourth embodiment of the present invention. In Fig. 36, a plurality of transistors 117 (transistors 117Q1 to 117Qn) to be tested are connected in parallel to a current power supply circuit 121.

[0317] The fourth embodiment includes one switch circuit board 201a and n switch circuit boards 201b (switch circuit boards 201b1 to 201bn). The number of transistors 117Q to be tested simultaneously or sequentially is n (transistors 117Q1 to 117Qn).

[0318] The collector terminal of the transistor Q1 is connected to the fork plug 205e1, and the emitter terminal of the transistor Q1 is connected to the fork plug 205c1.

[0319] The collector terminal of the transistor Q2 is connected to the fork plug 205e2, and the emitter terminal of the transistor Q2 is connected to the fork plug 205c2.

[0320] The collector terminal of the transistor Q3 is connected to the fork plug 205e3, and the emitter terminal of the transistor Q3 is connected to the fork plug 205c3.

[0321] Similarly, the collector terminal of the transistor Qn is connected to the fork plug 205en, and the emitter terminal of the transistor Qn is connected to the fork plug 205cn.

[0322] When the switch circuit Ssa1 is turned on, the current Ic of the constant current circuit 118 is supplied to the diode Ds of the transistor 117Q1. The terminal voltage of the diode Ds is applied to the operational amplifier (buffer) 116 and is output from the operational amplifier circuit 116 as the voltage Vi1.

[0323] When the switch circuit Ssa2 is turned on, the current Ic of the constant current circuit 118 is supplied to the diode Ds of the transistor 117Q2. The terminal voltage of the diode Ds is applied to the operational amplifier (buffer) 116 and is output from the operational amplifier circuit 116 as the voltage Vi2.

[0324] Similarly, when the switch circuit Ssan is turned on, the current Ic of the constant current circuit 118 is supplied to the diode Ds of the transistor 117Qn. The terminal voltage of the diode Ds is applied to the operational amplifier (buffer) 116 and is output from the operational amplifier circuit 116 as the voltage Vin. One voltage is selected from voltages Vi 1 to Vin by selector 127 , output as Vi, and input to temperature measurement circuit 115 .

[0325] The temperature measurement circuit 115 obtains temperature information Tj and outputs it to the control circuit board 111. In the embodiment of FIG. 36, one constant current circuit 118 is used, but this is not limitative. A constant current circuit 118 may be provided for each transistor 117Q. Furthermore, a temperature measurement circuit 115 may be formed or provided for each transistor 117Q. The voltage data Vi and the temperature information Tj are sent to the control circuit board 111 via the wiring of the motherboard 207 .

[0326] The element terminal 226 (P terminal) of the transistor 117Q1 is connected to the connection structure 218a1, and the element terminal 226 (N terminal) of the transistor 117Q1 is connected to the connection structure 218b1.

[0327] The element terminal 226 (P terminal) of the transistor 117Q2 is connected to the connection structure 218a2, and the element terminal 226 (N terminal) of the transistor 117Q2 is connected to the connection structure 218b2.

[0328] Similarly, the element terminal 226 (P terminal) of the transistor 117Qn is connected to the connection structure 218an, and the element terminal 226 (N terminal) of the transistor 117Qn is connected to the connection structure 218bn, where n is a positive number equal to or greater than 1. The connection structure 218 is inserted through an opening 216 provided in the partition wall 217. The connection structure 218 is inserted from the C2 chamber toward the C1 chamber.

[0329] The fork plug 205 is inserted into the chamber B from the chamber C2 side through an opening 216 formed in the partition wall 214. When the fork plug 205 is inserted, it is connected to the conductor plate 204 of the switch circuit board 201. The switch circuit board 201 can be selected depending on the position of the opening 216 into which the fork plug 205 is inserted.

[0330] By changing the position of the switch circuit board 201 connected to the connector 213 of the mother board 207, the switch circuit board 201 to be selected by the fork plug 205 can be selected.

[0331] Two conductive plates 204 are arranged on the switch circuit board 201. Of the two conductive plates 204, the conductive plate 204 closer to the C2 chamber and the fork plug 205 are arranged so as to be connected (contacted).

[0332] In the embodiment of the present invention, the fork plug 205 and the conductor plate 204 are electrically connected by contacting each other, but this is not limited to this. Any mechanism that can change between an electrically connected state and a non-connected state through mechanical operation is acceptable. Furthermore, any mechanism that can stably maintain the connected state is acceptable.

[0333] For example, a rotary connector, a rotary joint, a high-current connector, etc. may be used instead of the fork plug 205. The conductive plate 204 may be a rotary connector, a rotary joint, a high-current connector, a cylindrical conductive rod, a rectangular conductive rod, a comb-shaped conductive plate, etc.

[0334] Although the present specification and drawings describe the conductor plate 204 as a plate, it is not limited to a plate and may be rod-shaped. Any shape may be used as long as it can be joined to a structure such as the fork plug 205. For example, it may be a structure such as a socket or connector. Furthermore, the conductor plate 204 may be shaped like a fork plug, and the fork plug 205 may be connected to the fork plug.

[0335] 37 is an explanatory diagram of a semiconductor device testing method in an embodiment of the present invention, illustrating the operation of FIG. 36. It is possible to perform a semiconductor test by simultaneously turning on transistors 117Q (transistors 117Q1 to 117Qn). In this case, a constant current Id must flow through all of transistors 117Q (transistors 117Q1 to 117Qn). Therefore, if there are n transistors 117Q, current power supply circuit 121a must be able to output a current of Id×n (n is a positive number greater than or equal to 1). Therefore, a large-capacity current power supply circuit 121a is required.

[0336] If a test is performed by sequentially turning on transistor 117Q and applying constant current Id to transistor 117Q, the constant current output from current power supply circuit 121a can be Id. Figure 37 shows an example of a testing method for a semiconductor device testing apparatus that performs a test by sequentially turning on transistor 117Q. The semiconductor device changes depending on the number of times constant current Id is turned on and off.

[0337] Therefore, by conducting a test by sequentially turning on the semiconductor elements (transistor 117Q, etc.) as shown in FIG. 37, the test can be carried out efficiently, and the maximum output current capacity of the current power supply circuit 121a can be reduced.

[0338] 37, the description will be given assuming that one transistor 117Q is turned on, but this is not limited to this. For example, multiple transistors 117Q may be turned on simultaneously. In this case, the maximum value of the constant current output by the current power supply circuit 121a is the number of transistors 117Q turned on multiplied by Id.

[0339] Furthermore, although the embodiment of the present invention illustrates one current power supply circuit 121a, the present invention is not limited to this. A current power supply circuit 121b may be installed separately from the current power supply circuit 121a. Furthermore, two or more current power supply circuits 121 may be installed. By installing multiple current power supply circuits 121, the current Id flowing through the transistor 117 can have various waveforms. The above also applies to the embodiments of the present invention.

[0340] As shown in Figure 37(a), when switch circuit St1 (151s1) to switch circuit Stn (151sn) are turned on, constant currents Id1 to Idn flow through transistor 117. For example, the application time of constant current Id is ton, and constant currents Id1 and Id2 are applied to transistor 117 sequentially at intervals of time tcycle. When transistor 117 is turned on, the channel voltage of transistor 117Q changes sequentially (Figure 37(c)).

[0341] Therefore, for example, there is no overlap in time between the constant current Id1 and the constant current Id2, and therefore the output capacitance of the current power supply circuit 121 may be the output capacitance required for testing one transistor 117Q.

[0342] The constant currents Id (Id1 to Idn) are controlled so as not to overlap. Preferably, there is an interval of 1 μsec or more between each of the constant currents Id (Id1 to Idn). Note that the driving method and control method described with reference to FIG. 31 are implemented for each transistor 117Q.

[0343] The constant current Ic to be supplied to each transistor 117Q is supplied to the diode Ds of each transistor 117Q by sequentially turning on the switch circuits Ssa (Ssa1 to Ssan).

[0344] A voltage Vi (Vi1 to Vin) corresponding to the terminal voltage of diode Ds is selected by selector 127 in synchronization with switch circuit Ssa (Ssa1 to Ssan). For example, when current Ic is supplied to transistor 117Q1, selector 127 selects the terminal voltage of diode Ds of transistor 117Q1. When current Ic is supplied to transistor 117Q3, selector 127 selects the terminal voltage of diode Ds of transistor 117Q3. The selected voltage Vi is supplied to temperature measurement circuit 115. The other configurations and operations are the same as those explained in the other embodiments, so the explanation will be omitted. In the embodiment of the present invention, the transistor 117 is described as an IGBT, but is not limited to this.

[0345] For example, it goes without saying that an N-channel JFET (Figure 38(a)), a P-channel JFET (Figure 38(b)), an N-channel MOSFET (Figure 38(c)), a P-channel MOSFET (Figure 38(d)), an N-channel bipolar FET (Figure 38(e)), or a P-channel bipolar FET (Figure 38(f)) may also be used.

[0346] Furthermore, the device is not limited to a three-terminal device, and may be a two-terminal element such as a diode as shown in FIG. 38(g). A two-terminal element does not require the gate signal Vgs. It goes without saying that the semiconductor element testing apparatus and semiconductor element testing method of the present invention can be applied by conducting a test by passing a constant current Id from the current power supply circuit 121.

[0347] Furthermore, it goes without saying that the semiconductor element testing apparatus and semiconductor element testing method of the present invention are not limited to transistors and diodes, but can also be applied to other semiconductor elements such as thyristors and triacs, varistors, diacs, or modules in which transistors, diode resistors, etc. are mixed or integrated.

[0348] Although the present specification has described the present invention in detail based on the embodiments, it goes without saying that the present invention is not limited to these embodiments and that various modifications are possible within the scope of the present invention. It goes without saying that the matters or contents described in this specification and drawings can be combined with each other.

[0349] For example, the switch circuits 124a and 124b shown in Fig. 30 can be applied to other embodiments. For example, it goes without saying that the configurations or operations of Fig. 36 and Fig. 37 can also be applied to other embodiments such as Fig. 34 and Fig. 35. [Industrial Applicability]

[0350] The present invention provides a semiconductor element testing apparatus and a semiconductor testing method that can easily change connections depending on the test content of semiconductor elements such as transistors and the number of semiconductor elements to be tested simultaneously, and that can effectively implement measures to prevent noise generated during testing. [Explanation of symbols]

[0351] 111 Control circuit board (controller) 112 Gate signal control circuit 113 Gate driver circuit 115 Temperature measurement circuit 116 Operational amplifier (buffer amplifier) 117 Power Transistor 118 Constant current circuit 121 Current power circuit 122 Switch Circuit 124 Switch Circuit 125 Variable Resistor Circuit 126 Variable Resistor Circuit 127 Selectors 128 Current detection circuit 129 Voltage detection circuit 130 Constant current setting circuit 131 Control Rack 132 Power supply 133 Control circuit 134 Heating and cooling plate 135 Circulating Water Pipe 136 Chiller 137 Short Circuit 138 Isolated DC / DC converter circuit 201 Switch circuit board 202 Connector 203 Sample connection circuit 204 Conductor Plate 205 fork plug 206 connecting pins 207 Motherboard 208 Connector 209 Device control circuit board 210 cabinet 211 Connection wiring 212 Power wiring 213 Connector 214 Bulkhead 215 Bulkhead 216 Opening 218 Connection Structure 219 Connection bolt 220 Contact part 221 Fixing screw 222 signal wiring 223 Heat Pipe 224 Fixing screw 225 Contact point 226 Element terminal 227 Cooling Fan 228 Heat dissipation fin 231 Heat pipe fittings 232 Connectors 233 Connection fitting part 234 recess 236 Spring (pressure fitting) 237 Position fixing screw 238 screw holes 239 Spring hole 240 positioning screw hole 241 Fork plug insert plate 251 Convex 252 Groove 301 Test Circuit Module 302 Voltage selection circuit 311 Pressing tool 312 Insulating board 313 Pressing tool mounting plate 315 Insulation section 322 Heating / cooling device 323 Support stand 324 Electrical element insertion hole 325 Slide groove

Claims

1. 1. A power cycle test apparatus for testing a power transistor having a gate terminal and an element terminal, comprising: a plurality of first switch circuit boards each having a first switch circuit and a conductive plate or conductive rod connected to the first switch circuit; a gate driver circuit that applies a signal to the gate terminal to turn on or off the power transistor; a power supply device for supplying a test current or a test voltage to the element terminal; the conductive plate or conductive rod has a portion protruding from the first switch circuit board, a wiring connected to the element terminal is connected to a protruding portion of a conductor plate or a conductor rod of any one of the plurality of first switch circuit boards among the protruding portions of the conductor plates or the conductor rods of the plurality of first switch circuit boards, thereby forming a path for supplying the test current or the test voltage to the element terminal of the power transistor; the power transistor is disposed in a first chamber; The power cycle testing device is characterized in that the first switch circuit board is disposed in a second chamber.

2. 1. A power cycle test apparatus for testing a power transistor having a gate terminal, an element terminal, and a diode element, comprising: a plurality of first switch circuit boards each having a first switch circuit and a conductive plate or conductive rod connected to the first switch circuit; The motherboard and a gate driver circuit that applies a signal to the gate terminal to turn on or off the power transistor; a power supply device for supplying a test current or a test voltage to the element terminal; the conductive plate or conductive rod has a portion protruding from the first switch circuit board, a wiring connected to the element terminal is connected to a protruding portion of a conductor plate or a conductor rod of any one of the plurality of first switch circuit boards among the protruding portions of the conductor plates or the conductor rods of the plurality of first switch circuit boards, thereby forming a path for supplying the test current or the test voltage to the element terminal of the power transistor; the motherboard and the plurality of first switch circuit boards are connected; a terminal voltage of the diode element is output to the motherboard; the power transistor is disposed in a first chamber; The power cycle testing device is characterized in that the first switch circuit board is disposed in a second chamber.

3. 1. A power cycle test apparatus for testing a power transistor having a gate terminal, an element terminal, and a diode element, comprising: a plurality of first switch circuit boards each having a first switch circuit and a conductive plate or conductive rod connected to the first switch circuit; a gate driver circuit that applies a signal to the gate terminal to turn on or off the power transistor; a constant current circuit that supplies a constant current to the diode element; a voltage output circuit that outputs a terminal voltage of the diode element; a power supply device for supplying a test current or a test voltage to the element terminal; the conductive plate or conductive rod has a portion protruding from the first switch circuit board, a wiring connected to the element terminal is connected to a protruding portion of a conductor plate or a conductor rod of any one of the plurality of first switch circuit boards among the protruding portions of the conductor plates or the conductor rods of the plurality of first switch circuit boards, thereby forming a path for supplying the test current or the test voltage to the element terminal of the power transistor; when the signal to turn off the power transistor is applied to the gate terminal of the power transistor, the constant current circuit supplies the constant current to the diode element, and the temperature or temperature change of the power transistor is determined from the terminal voltage output by the voltage output circuit; the power transistor is disposed in a first chamber; The power cycle testing device is characterized in that the first switch circuit board is disposed in a second chamber.

4. 4. The power cycle testing device according to claim 1, wherein a resistance circuit is disposed at the gate terminal, and the resistance value of the resistance circuit is changeable.

5. a second switch circuit that short-circuits the output terminals of the power supply device; When starting to supply the test current or test voltage to the power transistor, after short-circuiting the output terminals of the power supply device by the second switch circuit, turning on the first switch circuit to supply the test current or test voltage to the power transistor; When the supply of the test current or test voltage to the power transistor is stopped, 4. The power cycle testing device according to claim 1, wherein after the output terminals of the power supply device are short-circuited by the second switch circuit, the first switch circuit is turned off to stop the test current or test voltage from being applied to the power transistor.

6. the turn-off signal has a first turn-off voltage and a second turn-off voltage; the second off-voltage is lower than the first off-voltage, the gate driver circuit periodically supplies the first off voltage, the second off voltage, and an on voltage to the gate terminal; 3. The power cycle testing device according to claim 2, wherein when the second off-voltage is applied to the gate terminal of the power transistor, a constant current is supplied to the diode element and a voltage between the terminals of the diode element is measured.

7. 4. The power cycle testing device according to claim 1, wherein a plurality of the first switch circuits are arranged on the first switch circuit board.

8. A power cycle testing device as described in claim 1, 2 or 3, characterized in that an opening is positioned based on the position of the protruding portion of the conductive plate or conductive rod, and the element terminal and the protruding portion of the conductive plate or conductive rod are connected through the opening.

9. 4. The power cycle testing device according to claim 1, wherein the plurality of first switch circuit boards are arranged in parallel.

10. a heating / cooling plate to which a first circulating water pipe for introducing a liquid and a second circulating water pipe for discharging the liquid are attached; Further comprising a water leakage sensor for detecting the leaked liquid, the power transistor is disposed on the heating / cooling plate; 4. The power cycle testing device according to claim 1, 2 or 3, wherein the operation of the power cycle testing device is stopped or an alarm is issued in response to the operation of the water leakage sensor.

Images