Multi-wavelength light source module

Abstract

To provide a multi-wavelength light source module for emitting light which is aligned in polarization direction and has high power.SOLUTION: A multi-wavelength light source module 10 includes a plurality of first sets and a plurality of second sets arranged on a main surface 21 of a base 20. The first set includes a first semiconductor laser chip 51 that has a first optical axis parallel to the main surface 21 and emits first light in a first wavelength band, and a first mirror 61 for reflecting the first light in a direction vertical to the main surface 21. The second set includes a second semiconductor laser chip 52 which has a second optical axis parallel to the main surface 21 and emits second light in a second wavelength band different from the first wavelength band, and a second mirror 62 for reflecting the second light in a direction vertical to the main surface 21. The first optical axis is vertical to the second optical axis, and the polarization direction of the first light propagating from the first semiconductor laser chip 51 to the first mirror 61 and the polarization direction of the second light propagating from the second semiconductor laser chip 52 to the second mirror 62 are orthogonal to each other.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] The present disclosure relates to a multi-wavelength light source module. [Background technology]

[0002] Conventionally, a multi-wavelength light source module having a plurality of semiconductor laser chips that emit light of different colors has been known (for example, Patent Document 1). The multi-wavelength light source module described in Patent Document 1 includes a red semiconductor laser chip, a green semiconductor laser chip, and a blue semiconductor laser chip. The polarization direction of the emitted light of a typical red semiconductor laser chip is parallel to the fast axis direction (i.e., the direction in which the light divergence angle is large), and the polarization direction of the emitted light of a typical green semiconductor laser chip and blue semiconductor laser chip is perpendicular to the fast axis direction.

[0003] In the multi-wavelength light source module described in Patent Document 1, the semiconductor laser chips are arranged so that the optical axis direction of the red semiconductor laser chip is perpendicular to the optical axes of the green and blue semiconductor laser chips. As a result, the multi-wavelength light source module described in Patent Document 1 aims to align the polarization direction of the red light contained in the output light with the polarization directions of the green and blue light. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Publication No. 2020-72116 Summary of the Invention [Problem to be solved by the invention]

[0005] However, for example, light used in a time-resolved projector having a single liquid crystal display is required to have high power in addition to having a uniform polarization direction.

[0006] The present disclosure is intended to solve such problems, and has an object to provide a multi-wavelength light source module that emits light with a uniform polarization direction and high power. [Means for solving the problem]

[0007] In order to solve the above-described problems, one aspect of a multi-wavelength light source module according to the present disclosure includes a base having a main surface, and a plurality of first sets and a plurality of second sets arranged on the main surface, each of the plurality of first sets having a first optical axis parallel to the main surface and including a first semiconductor laser chip that emits first light in a first wavelength band and a first mirror that reflects the first light in a direction perpendicular to the main surface, each of the plurality of second sets having a second optical axis parallel to the main surface and including a second semiconductor laser chip that emits second light in a second wavelength band different from the first wavelength band and a second mirror that reflects the second light in a direction perpendicular to the main surface, wherein the first optical axis is parallel to a first direction parallel to the main surface and the second optical axis is parallel to a second direction parallel to the main surface, the second direction being perpendicular to the first direction, and the polarization direction of the first light propagating from the first semiconductor laser chip to the first mirror is orthogonal to the polarization direction of the second light propagating from the second semiconductor laser chip to the second mirror. [Effects of the Invention]

[0008] According to the present disclosure, it is possible to provide a multi-wavelength light source module that emits light with a uniform polarization direction and high power. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is a plan view of a multi-wavelength light source module according to a first embodiment. [Figure 2] FIG. 2 is a cross-sectional view of the multi-wavelength light source module according to the first embodiment. [Figure 3] FIG. 3 is a plan view showing a state in which the cover of the multi-wavelength light source module according to the first embodiment is removed. [Figure 4]FIG. 4 is a schematic diagram illustrating an outline of the far-field pattern of the first semiconductor laser chip according to the first embodiment. [Figure 5] FIG. 5 is a diagram illustrating propagation of the first light from the first semiconductor laser chip according to the first embodiment. [Figure 6] FIG. 6 is a diagram illustrating propagation of the second light from the second semiconductor laser chip according to the first embodiment. [Figure 7] FIG. 7 is a plan view showing the layout of each module and wiring in the multi-wavelength light source module according to the first embodiment. [Figure 8] FIG. 8 is a plan view showing the layout of each module and wiring in the multi-wavelength light source module according to the second embodiment. [Figure 9] FIG. 9 is a plan view showing the layout of each module and wiring in the multi-wavelength light source module according to the third embodiment. [Figure 10] FIG. 10 is a plan view showing the layout of each module and wiring in the multi-wavelength light source module according to the fourth embodiment. [Figure 11] FIG. 11 is a plan view showing the layout of each module and wiring in a multi-wavelength light source module according to the fifth embodiment. [Figure 12] FIG. 12 is a plan view showing the layout of each module and wiring in the multi-wavelength light source module according to the sixth embodiment. [Figure 13] FIG. 13 is a plan view showing the layout of each module and wiring in the multi-wavelength light source module according to the seventh embodiment. [Figure 14] FIG. 14 is a plan view showing the layout of each module and wiring in the multi-wavelength light source module according to the eighth embodiment. [Figure 15] FIG. 15 is a plan view showing the layout of each module and wiring in the multi-wavelength light source module according to the ninth embodiment. [Figure 16] FIG. 16 is a plan view showing a state in which the cover of the multi-wavelength light source module according to the modification of the first embodiment is removed. [Figure 17]FIG. 17 is a plan view showing the layout of each module and wiring in a multi-wavelength light source module according to a modification of the second embodiment. [Figure 18] FIG. 18 is a plan view showing the layout of each module and wiring in a multi-wavelength light source module according to a modification of the seventh embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0010] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. Note that each of the embodiments described below represents a specific example of the present disclosure. Therefore, the numerical values, shapes, materials, components, and the arrangement and connection of the components shown in the following embodiments are merely examples and are not intended to limit the present disclosure.

[0011] Furthermore, each figure is a schematic diagram and is not necessarily an exact representation. Therefore, the scales and the like do not necessarily match in each figure. In each figure, the same reference numerals are used to denote substantially the same components, and redundant explanations will be omitted or simplified.

[0012] (Embodiment 1) A multi-wavelength light source module according to a first embodiment will be described.

[0013] [1-1. Overall structure] First, the overall configuration of the multi-wavelength light source module according to the present embodiment will be described with reference to Figs. 1 to 3. Figs. 1 and 2 are a plan view and a cross-sectional view, respectively, of the multi-wavelength light source module 10 according to the present embodiment. Fig. 2 shows a portion of the cross section taken along line II-II in Fig. 1. Fig. 3 is a plan view showing the multi-wavelength light source module 10 according to the present embodiment with the lid 40 removed. Note that Fig. 3 shows the outlines of each lens of the lid 40 with dashed lines. Also, Figs. 2 and 3 omit wiring for supplying power to each semiconductor laser chip included in the multi-wavelength light source module 10.

[0014] The multi-wavelength light source module 10 according to this embodiment is a device that emits light in multiple wavelength bands. The multi-wavelength light source module 10 includes a base 20, a plurality of first sets 11a to 11j, and a plurality of second sets 12a to 12d. In this embodiment, the multi-wavelength light source module 10 further includes a plurality of third sets 13a to 13d, a cover 40, and a frame member 30.

[0015] The base 20 shown in FIGS. 1 to 3 is a member on which the plurality of first sets 11a to 11j and the plurality of second sets 12a to 12d are arranged. In this embodiment, the base 20 has a planar main surface 21. In this embodiment, the base 20 is a substrate having a substantially rectangular plate-like shape. The base 20 is made of a material with high thermal conductivity, and also functions as a heat dissipation member that dissipates heat generated by the plurality of first sets 11a to 11j, etc.

[0016] The base 20 is made of, for example, a metal material or a ceramic material. In order for the base 20 to efficiently dissipate the heat generated in each set, the base 20 is preferably made of a material with high thermal conductivity, such as a metal material. Metal materials with high thermal conductivity that are practical for the base 20 include, for example, Cu or Al. In this embodiment, the base 20 is a Cu substrate made of Cu.

[0017] The frame member 30 shown in FIGS. 1 to 3 is an annular member that surrounds the plurality of first sets 11a to 11j and the plurality of second sets 12a to 12d. The frame member 30 is erected on the main surface 21 of the base 20 and functions as part of a container that houses the plurality of first sets 11a to 11j and the plurality of second sets 12a to 12d. The frame member 30 also has the function of supporting the lid body 40. The frame member 30 is sandwiched between the base 20 and the lid body 40. The plurality of first sets 11a to 11j and the plurality of second sets 12a to 12d are arranged in the space surrounded by the base 20, the frame member 30, and the lid body 40. Here, the space surrounded by the frame member 30, the base 20, and the lid body 40 is hermetically sealed. The frame member 30 has current terminals for supplying current to the plurality of first sets 11a-11j, the plurality of second sets 12a-12d, and the like. Specifically, as shown in FIG. 1, the frame member 30 has two first positive electrode current terminals 91p, two first negative electrode current terminals 91n, one second positive electrode current terminal 92p, one second negative electrode current terminal 92n, one third positive electrode current terminal 93p, and one third negative electrode current terminal 93n. In diagrams for explaining the arrangement of the sets, such as FIGS. 2 and 3, current supply members such as the current terminals are omitted to avoid cluttering the drawings. The current supply members such as the current terminals will be described later. The frame member 30 is formed of, for example, a metal such as Fe or an alloy. When the frame member 30 includes current terminals, an insulating member is disposed around the current terminals.

[0018] 3 are arranged on the main surface 21 of the base 20. Each of the first sets 11a to 11j has a first semiconductor laser chip 51 and a first mirror 61. In the present embodiment, each of the ten first sets 11a to 11j is arranged on the main surface 21 and further has a first submount 71 on which the first semiconductor laser chip 51 is arranged.

[0019] The multiple first sets 11a to 11j are arranged in the second direction out of the first direction and the second direction which are parallel to the main surface 21 and perpendicular to each other. Specifically, the first sets 11a to 11e and the first sets 11f to 11j are each arranged in the second direction. In other words, the first sets 11a to 11j are arranged in a matrix of 2 rows and 5 columns.

[0020] The first semiconductor laser chip 51 is a laser chip that has a first optical axis parallel to the main surface 21 and emits first light in a first wavelength band. In the present embodiment, the first optical axis is parallel to a first direction parallel to the main surface 21. The first wavelength band includes at least a part of a wavelength band including red light (approximately not less than 590 nm and not more than 780 nm). In other words, the first semiconductor laser chip 51 is a red semiconductor laser chip. The oscillation wavelength of the first semiconductor laser chip 51, which is a red semiconductor laser chip, may be not less than 590 nm and not more than 650 nm.

[0021] 2, the first semiconductor laser chip 51 has an emission surface that emits a first light L11, which is a laser beam. The optical axis of the first light L11 (i.e., the first optical axis) is parallel to the main surface 21 of the base 20. Here, the first light L11 is indicated by a dashed arrow, but this dashed arrow indicates the optical axis of the first light L11, and the first light L11 is actually a diverging light having a width. In this embodiment, as shown in FIG. 3, the first semiconductor laser chip 51 emits the first light L11 in a direction away from the region where the second sets 12a to 12d and the third sets 13a to 13d are arranged.

[0022] The first semiconductor laser chip 51 has an elongated shape with the first optical axis as the longitudinal direction. As an example, the length of the first semiconductor laser chip 51 in the first optical axis direction is 1200 μm, but is not limited to this.

[0023] The first semiconductor laser chip 51 is mounted on the upper surface of the first submount 71 (i.e., the surface behind the surface facing the main surface 21). Specifically, the first semiconductor laser chip 51 is mounted on a p-side connection electrode (not shown) on the first submount 71. In this embodiment, the first semiconductor laser chip 51 is mounted on the first submount 71 by junction-down mounting. The p-side electrode of the first semiconductor laser chip 51 is connected to the p-side connection electrode on the first submount 71. The p-side connection electrode on the first submount 71 is an example of a p-side connection electrode for supplying current to the first semiconductor laser chip 51. Furthermore, the n-side connection electrode of the first semiconductor laser chip 51 is an example of an n-side connection electrode for supplying current to the first semiconductor laser chip 51. Note that the mounting form of the first semiconductor laser chip 51 is not limited thereto, and the first semiconductor laser chip 51 may be mounted on the first submount 71 by junction-up mounting. In this case, current is supplied to the first semiconductor laser chip 51 from the n-side connection electrode on the first submount 71 and the p-side electrode of the first semiconductor laser chip 51 .

[0024] In this way, the first semiconductor laser chip 51 and the first submount 71 constitute a first submodule, and each of the first submodules has a p-side connection electrode and an n-side connection electrode for supplying power to the first semiconductor laser chip 51.

[0025] The first semiconductor laser chip 51 is mounted such that its emission surface, which emits the first light L11, protrudes beyond the end face of the first submount 71 on the light emission side. That is, the first semiconductor laser chip 51 protrudes beyond the end face of the first submount 71 on the light emission side, and the emission surface of the first semiconductor laser chip 51 is located closer to the light emission side of the first semiconductor laser chip 51 than the end face of the first submount 71 on the light emission side. The protrusion amount of the first semiconductor laser chip 51 (i.e., the distance from the end face of the first submount 71 on the light emission side to the emission surface of the first semiconductor laser chip 51) is, for example, not less than 5 μm and not more than 20 μm, but is not limited to this. In this embodiment, the protrusion amount of the first semiconductor laser chip 51 is 10 μm.

[0026] The polarization direction of the first light L11 propagating from the first semiconductor laser chip 51 to the first mirror 61 is a third direction perpendicular to the principal surface 21. Here, "parallel" does not necessarily mean "perfectly parallel" but also includes "substantially parallel." For example, the state in which the first optical axis is parallel to the principal surface 21 also includes a state in which the inclination of the first optical axis with respect to the principal surface 21 is 5° or less. Furthermore, "perpendicular" does not necessarily mean "perfectly perpendicular" but also includes a state in which the inclination of the polarization direction of the first light L11 with respect to the normal to the principal surface 21 is 5° or less. The same applies to the terms "parallel" and "perpendicular" used below. Here, the first semiconductor laser chip 51 is a semiconductor laser chip having an active layer formed of a GaInP-based semiconductor. The active layer of the first semiconductor laser chip 51 includes a tensile-strained quantum well layer. The first semiconductor laser chip 51 oscillates in the TM mode. The first semiconductor laser chip 51 is mounted so that the principal surface of the active layer of the first semiconductor laser chip 51 is parallel to the principal surface 21 .

[0027] The first mirror 61 is an optical element that reflects the first light L11 in a direction perpendicular to the main surface 21. As shown in FIG. 2, the first mirror 61 is an element having a first reflecting surface 61a that reflects the first light L11 from the first semiconductor laser chip 51. As shown in FIGS. 2 and 3, the first mirror 61 is disposed at a position corresponding to the first lens 41 of the lid 40. As shown in FIG. 2, the first reflecting surface 61a is disposed opposite to the emission surface of the first semiconductor laser chip 51. In this embodiment, the first mirror 61 is a flat mirror having a flat first reflecting surface 61a. The first reflecting surface 61a is inclined at 45° with respect to the first optical axis direction. In other words, the direction perpendicular to the first reflecting surface 61a is inclined at 45° with respect to the first optical axis direction. The first light L11 is reflected by the first reflecting surface 61a and propagates from the first mirror 61 toward the lid 40 as first reflected light L12. In addition, in FIG. 2, the first reflected light L12 is indicated by a dashed arrow, but this dashed arrow indicates the optical axis of the first reflected light L12, and the actual first reflected light L12 is divergent light with a width.

[0028] The first mirror 61 is mounted on the main surface 21 of the base 20 with a metal bonding material. In this embodiment, the positional relationship between the first mirror 61 and the first semiconductor laser chip 51 is the same in all of the first sets 11a to 11j. In other words, the distance from the emission surface of the first semiconductor laser chip 51 to the first mirror 61 is the same in all of the first sets 11a to 11j, and the height of the optical axis of the first light L11 (i.e., the first optical axis) of the first semiconductor laser chip 51 from the main surface 21 and the height of the first reflecting surface 61a from the main surface 21 are all the same.

[0029] The first submount 71 is disposed on the main surface 21 and is a support member on which the first semiconductor laser chip 51 is disposed. The first submount 71 is disposed between the main surface 21 and the first semiconductor laser chip 51, as shown in FIG.

[0030] The first submount 71 also functions as a heat sink for dissipating heat generated by the first semiconductor laser chip 51. Therefore, the material of the first submount 71 may be either a conductive material or an insulating material, but is preferably made of a material with high thermal conductivity. The thermal conductivity of the first submount 71 is preferably 150 W / (m·K) or higher. For example, the first submount 71 may be made of ceramics such as aluminum nitride (AlN) or polycrystalline silicon carbide (SiC), metal materials such as Cu, or diamond such as single crystal diamond or polycrystalline diamond. In this embodiment, the first submount 71 is made of AlN. The shape of the first submount 71 is, for example, a rectangular parallelepiped, but is not limited thereto. When a conductive material is used, it is preferable to form an insulating material on the mounting surface to prevent electrical connection between the semiconductor laser chip and the conductive base.

[0031] The first submount 71 is bonded to the main surface 21 of the base 20 using, for example, a metal bonding material. In other words, the first submount 71 is mounted without forming fixing holes or the like in the base 20. Therefore, the submount 50 can be mounted on the base 20 without degrading the heat dissipation characteristics of the base 20.

[0032] 3 are arranged on the main surface 21 of the base 20. Each of the second sets 12a to 12d has a second semiconductor laser chip 52 and a second mirror 62. In the present embodiment, each of the four second sets 12a to 12d is arranged on the main surface 21 and further has a second submount 72 on which the second semiconductor laser chip 52 is arranged. The second sets 12a to 12d are arranged in a line in the second direction.

[0033] The second semiconductor laser chip 52 is a laser chip that has a second optical axis parallel to the main surface 21 and emits second light in a second wavelength band different from the first wavelength band. In this embodiment, the second optical axis is parallel to the second direction. The second wavelength band includes at least a part of a wavelength band including green light (approximately 490 nm or more and 580 nm or less). In other words, the second semiconductor laser chip 52 is a green semiconductor laser chip. Note that it is sufficient that the second wavelength band is at least partially different from the first wavelength band. In other words, the second wavelength band may include a part of the first wavelength band.

[0034] The second semiconductor laser chip 52 has an emission surface that emits the second light, which is a laser beam. The second light is a divergent light having a width similar to the first light. In this embodiment, the second semiconductor laser chip 52 emits the second light in a direction from left to right in FIG. 3.

[0035] The second semiconductor laser chip 52 has an elongated shape with the second optical axis as the longitudinal direction. As an example, the length of the second semiconductor laser chip 52 in the second optical axis direction is 1200 μm, but is not limited to this.

[0036] The second semiconductor laser chip 52 is mounted on the upper surface of the second submount 72. Specifically, the second semiconductor laser chip 52 is mounted on a p-side connection electrode (not shown) on the second submount 72. In this embodiment, the second semiconductor laser chip 52 is mounted on the second submount 72 by junction-down mounting. The p-side electrode of the second semiconductor laser chip 52 is connected to the p-side connection electrode on the second submount 72. The p-side connection electrode on the second submount 72 is an example of a p-side connection electrode for supplying current to the second semiconductor laser chip 52. The n-side connection electrode of the second semiconductor laser chip 52 is an example of an n-side connection electrode for supplying current to the second semiconductor laser chip 52. Note that the mounting configuration of the second semiconductor laser chip 52 is not limited thereto, and the second semiconductor laser chip 52 may also be mounted on the second submount 72 by junction-up mounting. In this way, the second semiconductor laser chip 52 and the second submount 72 constitute a second submodule, and each second submodule has a p-side connection electrode and an n-side connection electrode for supplying power to the second semiconductor laser chip 52.

[0037] Similarly to the first semiconductor laser chip 51, the second semiconductor laser chip 52 is mounted so that its emission surface extends beyond the end face on the light emission side of the second submount 72. The polarization direction of the second light propagating from the second semiconductor laser chip 52 to the second mirror 62 is a first direction parallel to the main surface 21. Here, the second semiconductor laser chip 52 is a semiconductor laser chip having an active layer formed of a GaInN-based semiconductor. The second semiconductor laser chip 52 oscillates in the TE mode. The second semiconductor laser chip 52 is mounted so that the main surface of the active layer of the second semiconductor laser chip 52 is parallel to the main surface 21.

[0038] The second mirror 62 is an optical element that reflects the second light in a direction perpendicular to the principal surface 21. As shown in FIG. 3, the second mirror 62 is an element having a second reflecting surface 62a that reflects the second light from the second semiconductor laser chip 52. As shown in FIG. 3, the second mirror 62 is disposed at a position corresponding to the second lens 42 of the lid 40. The second reflecting surface 62a is disposed opposite the emission surface of the second semiconductor laser chip 52. In this embodiment, the second mirror 62 is a flat mirror having a flat second reflecting surface 62a. The second reflecting surface 62a is inclined at 45° with respect to the second optical axis direction. In other words, the direction perpendicular to the second reflecting surface 62a is inclined at 45° with respect to the second optical axis direction. The second light is reflected by the second reflecting surface 62a and propagates from the second mirror 62 toward the lid 40 as second reflected light. The second reflected light is diverging light.

[0039] The second mirror 62 is mounted on the main surface 21 of the base 20. In this embodiment, the positional relationship between the second mirror 62 and the second semiconductor laser chip 52 is the same in all of the second sets 12a to 12d. In other words, the distance from the emission surface of the second semiconductor laser chip 52 to the second mirror 62 is the same in all of the second sets 12a to 12d, and the height of the optical axis of the second light of the second semiconductor laser chip 52 from the main surface 21 and the height of the second reflecting surface 62a from the main surface 21 are all the same.

[0040] The second submount 72 is disposed on the main surface 21 and is a support member on which the second semiconductor laser chip 52 is disposed. The second submount 72 is disposed between the main surface 21 and the second semiconductor laser chip 52.

[0041] The second submount 72 also functions as a heat sink, similar to the first submount 71. The material and shape of the second submount 72, as well as the mounting configuration on the main surface 21, are similar to those of the first submount 71.

[0042] 3 are arranged on the main surface 21 of the base 20. Each of the third sets 13a to 13d has a third semiconductor laser chip 53 and a third mirror 63. In the present embodiment, each of the four third sets 13a to 13d is arranged on the main surface 21 and further has a third submount 73 on which the third semiconductor laser chip 53 is arranged. The third sets 13a to 13d are arranged in a line in the second direction.

[0043] The third semiconductor laser chip 53 is a laser chip that has a third optical axis parallel to the main surface 21 and emits third light in a third wavelength band different from the first wavelength band and the second wavelength band. In this embodiment, the third optical axis is parallel to the second direction. The third wavelength band includes at least a portion of a wavelength band including blue light (approximately 380 nm or more and 490 nm or less). In other words, the third semiconductor laser chip 53 is a blue semiconductor laser chip. Note that it is sufficient that the third wavelength band is at least partially different from the first wavelength band and the second wavelength band. In other words, the third wavelength band may include a portion of at least one of the first wavelength band and the second wavelength band.

[0044] The third semiconductor laser chip 53 has an emission surface that emits the third light, which is a laser beam. The third light is a divergent light having a width, similar to the first and second lights. In this embodiment, the third semiconductor laser chip 53 emits the third light in a direction from left to right in FIG. 3 .

[0045] The third semiconductor laser chip 53 has an elongated shape with the third optical axis as the longitudinal direction. As an example, the length of the third semiconductor laser chip 53 in the third optical axis direction is 1200 μm, but is not limited to this.

[0046] The third semiconductor laser chip 53 is mounted on the upper surface of the third submount 73. Specifically, the third semiconductor laser chip 53 is mounted on a p-side connection electrode (not shown) on the third submount 73. In this embodiment, the third semiconductor laser chip 53 is mounted on the third submount 73 by junction-down mounting. The p-side electrode of the third semiconductor laser chip 53 is connected to the p-side connection electrode on the third submount 73. The p-side connection electrode on the third submount 73 is an example of a p-side connection electrode for supplying current to the third semiconductor laser chip 53. The n-side connection electrode of the third semiconductor laser chip 53 is an example of an n-side connection electrode for supplying current to the third semiconductor laser chip 53. Note that the mounting form of the third semiconductor laser chip 53 is not limited thereto, and the third semiconductor laser chip 53 may also be mounted on the third submount 73 by junction-up mounting. In this way, the third semiconductor laser chip 53 and the third submount 73 constitute a third submodule, and each third submodule has a p-side connection electrode and an n-side connection electrode for supplying power to the third semiconductor laser chip 53.

[0047] Similarly to the first and second semiconductor laser chips 51 and 52, the third semiconductor laser chip 53 is mounted such that its emission surface extends beyond the light-emission end surface of the third submount 73. The polarization direction of the third light propagating from the third semiconductor laser chip 53 to the third mirror 63 is a first direction parallel to the principal surface 21. Here, the third semiconductor laser chip 53 is a semiconductor laser chip having an active layer formed of a GaInN-based semiconductor. The third semiconductor laser chip 53 oscillates in the TE mode. The third semiconductor laser chip 53 is mounted such that the principal surface of the active layer of the third semiconductor laser chip 53 is parallel to the principal surface 21.

[0048] The third mirror 63 is an optical element that reflects the third light in a direction perpendicular to the principal surface 21. As shown in FIG. 3, the third mirror 63 is an element having a third reflecting surface 63a that reflects the third light from the third semiconductor laser chip 53. As shown in FIG. 3, the third mirror 63 is disposed at a position corresponding to the third lens 43 of the lid 40. The third reflecting surface 63a is disposed opposite the emission surface of the third semiconductor laser chip 53. In this embodiment, the third mirror 63 is a flat mirror having a planar third reflecting surface 63a. The third reflecting surface 63a is inclined at 45° with respect to the third optical axis direction. In other words, the direction perpendicular to the third reflecting surface 63a is inclined at 45° with respect to the third optical axis direction. The third light is reflected by the third reflecting surface 63a and propagates from the third mirror 63 toward the lid 40 as third reflected light. The third reflected light is diverging light.

[0049] The third mirror 63 is mounted on the main surface 21 of the base 20. In this embodiment, the positional relationship between the third mirror 63 and the third semiconductor laser chip 53 is the same in all of the third sets 13a to 13d. In other words, the distance from the emission surface of the third semiconductor laser chip 53 to the third mirror 63 is the same in all of the third sets 13a to 13d, and the height of the optical axis of the third light of the third semiconductor laser chip 53 from the main surface 21 and the height of the third reflecting surface 63a from the main surface 21 are all the same.

[0050] The third submount 73 is disposed on the main surface 21 and is a support member on which the third semiconductor laser chip 53 is disposed. The third submount 73 is disposed between the main surface 21 and the third semiconductor laser chip 53.

[0051] The third submount 73 also functions as a heat sink, similar to the first submount 71. The material and shape of the third submount 73, as well as the mounting configuration on the main surface 21, are similar to those of the first submount 71.

[0052] The lid body 40 shown in FIGS. 1 and 2 is an optical member having at least a portion that is translucent. The lid body 40 is supported by the frame member 30 and functions as a lid for the area surrounded by the frame member 30. The lid body 40 is made of a translucent member such as glass. In this embodiment, the lid body 40 has a plurality of first lenses 41, a plurality of second lenses 42, and a plurality of third lenses 43. The lenses may be integrally formed or may be formed to be detachable from the lid body 40. The gap between the lid body 40 and the frame member 30 is hermetically sealed. Note that, although the gap between the lid body 40 and the frame member 30 is hermetically sealed in this embodiment, it is not necessarily hermetically sealed. Furthermore, the lid body 40 does not necessarily have to cover the entire opening of the frame member 30.

[0053] As shown in FIG. 2, the first light L11 reflected by the first mirror 61 is incident on each of the multiple first lenses 41. In other words, each of the multiple first lenses 41 receives the first reflected light L12, which is the first light L11 reflected by the first reflecting surface 61a of the first mirror 61. In this embodiment, each of the multiple first lenses 41 collimates the first reflected light L12 and outputs it as the first output light L13. The multiple first lenses 41 are all spherical lenses having the same focal length. The number of the multiple first lenses 41 is equal to the number of the first sets 11a to 11j. In this embodiment, the number of the multiple first lenses 41 is ten. Each of the multiple first lenses 41 is disposed at a position facing the first reflecting surface 61a. Therefore, the multiple first lenses 41 are arranged in two rows in the second direction, similar to the multiple first sets 11a to 11j.

[0054] The second light reflected by the second mirror 62 is incident on each of the second lenses 42. In other words, each of the second lenses 42 receives second reflected light, which is the second light reflected by the second reflecting surface 62a of the second mirror 62. In this embodiment, each of the second lenses 42 collimates the second reflected light and outputs it as second output light. The second lenses 42 are all spherical lenses having the same focal length. The number of the second lenses 42 is equal to the number of second sets 12a to 12d. In this embodiment, the number of the second lenses 42 is four. Each of the second lenses 42 is disposed at a position facing the second reflecting surface 62a. Therefore, the second lenses 42 are arranged in a row in the second direction, similar to the second sets 12a to 12d.

[0055] The third light reflected by the third mirror 63 is incident on each of the plurality of third lenses 43. In other words, each of the plurality of third lenses 43 receives the third reflected light, which is the third light reflected by the third reflecting surface 63a of the third mirror 63. In this embodiment, each of the plurality of third lenses 43 collimates the third reflected light and outputs it as the third output light. In this embodiment, all of the plurality of third lenses 43 are spherical lenses having the same focal length. The number of the plurality of third lenses 43 is equal to the number of the third sets 13a to 13d. In this embodiment, the number of the plurality of third lenses 43 is four. Each of the plurality of third lenses 43 is disposed at a position facing the third reflecting surface 63a. Therefore, the plurality of third lenses 43 are arranged in a row in the second direction, similar to the plurality of third sets 13a to 13d.

[0056] As shown in FIG. 1 , the cover 40 has a lens area 44 in which a plurality of first lenses 41, a plurality of second lenses 42, and a plurality of third lenses 43 are arranged. In this embodiment, the lens area 44 has a rectangular shape. The lens area 44 may be defined as any area in which the area occupied by each lens is 90% or more, for example. The lens area 44 may also be defined as an area surrounded by the envelopes of the plurality of first lenses 41, the plurality of second lenses 42, and the plurality of third lenses 43.

[0057] [1-2. Polarization direction] The polarization direction of the light emitted by the multi-wavelength light source module 10 according to this embodiment will be described. First, the polarization direction of the first light emitted by the first semiconductor laser chip 51 will be described with reference to FIGS. 4 and 5. FIG. 4 is a schematic diagram showing an outline of the far-field pattern (FFP) of the first semiconductor laser chip 51 according to this embodiment. FIG. 5 is a diagram showing the propagation state of the first light L11 from the first semiconductor laser chip 51 according to this embodiment. FIG. 5 shows a cross section passing through the first optical axis and perpendicular to the second direction. Also, in FIG. 5, the optical axes of the first light L11 and the first reflected light L12 are indicated by dashed arrows.

[0058] The first semiconductor laser chip 51 includes a semiconductor stack stacked in a third direction shown in FIG. 4. The divergence angle of the first light L11 emitted from the emission surface of the first semiconductor laser chip 51 in the third direction parallel to the stacking direction is larger than the divergence angle in the second direction perpendicular to the stacking direction. The axis of the first light L11 along the third direction, in which the divergence angle is larger, is the fast axis Af, and the axis of the first light L11 parallel to the second direction perpendicular to the first optical axis and the fast axis Af is the slow axis As. In the first semiconductor laser chip 51, which is a red semiconductor laser chip, the polarization direction is parallel to the fast axis Af. That is, the polarization direction of the first light L11 propagating from the first semiconductor laser chip 51 to the first mirror 61 is parallel to the third direction. As shown in FIG. 5, the fast axis Af and polarization direction of the first light L11 propagating from the first semiconductor laser chip 51 to the first mirror 61 are perpendicular to the main surface 21 of the base 20.

[0059] This first light L11 is reflected by the first reflecting surface 61a of the first mirror 61 and propagates as first reflected light L12 in a third direction perpendicular to the main surface 21. As the first light L11 is reflected by the first mirror 61, the direction of the fast axis Af also changes. The fast axis Af of the first reflected light L12 is parallel to the first direction, as shown in FIG. 5. The polarization direction of the first reflected light L12 is parallel to the fast axis Af, and therefore is parallel to the first direction.

[0060] Next, the polarization direction of the second light emitted by the second semiconductor laser chip 52 will be described with reference to FIG. 6. FIG. 6 is a diagram showing the propagation of the second light L21 from the second semiconductor laser chip 52 according to this embodiment. FIG. 6 shows a cross section passing through the second optical axis and perpendicular to the first direction. Also, in FIG. 6, the optical axes of the second light L21 and the second reflected light L22 are indicated by dashed arrows.

[0061] The second semiconductor laser chip 52 includes a semiconductor stack stacked in a third direction. The divergence angle of the second light L21 emitted from the emission surface of the second semiconductor laser chip 52 in the third direction parallel to the stacking direction is larger than the divergence angle in the second direction perpendicular to the stacking direction. The axis of the second light L21 along the third direction, in which the divergence angle is larger, is the fast axis Af, and the axis of the second light L21 parallel to the second optical axis and the first direction perpendicular to the fast axis Af is the slow axis As. In the second semiconductor laser chip 52, which is a green semiconductor laser chip, the polarization direction is parallel to the slow axis As. In other words, the polarization direction of the second light L21 propagating from the second semiconductor laser chip 52 to the second mirror 62 is parallel to the first direction. Thus, the polarization direction of the first light L11 propagating from the first semiconductor laser chip 51 to the first mirror 61 and the polarization direction of the second light L21 propagating from the second semiconductor laser chip 52 to the second mirror 62 are orthogonal to each other. As shown in FIG. 6, the slow axis As and polarization direction of the second light L21 propagating from the second semiconductor laser chip 52 to the second mirror 62 are parallel to the main surface 21 of the base 20.

[0062] Such second light L21 is reflected by the second reflecting surface 62a of the second mirror 62 and propagates as second reflected light L22 in a third direction perpendicular to the main surface 21. As the second light L21 is reflected by the second mirror 62, the direction of the fast axis Af changes, but the direction of the slow axis As does not change. The slow axis As of the second reflected light L22 is parallel to the first direction, as shown in FIG. 6. The polarization direction of the second reflected light L22 is parallel to the slow axis As, and therefore parallel to the first direction.

[0063] The slow axis As and polarization direction of the third light emitted from the third semiconductor laser chip 53, which is a blue semiconductor laser chip, are parallel to the first direction, similar to those of the second semiconductor laser chip 52. Thus, the polarization direction of the first light L11 propagating from the first semiconductor laser chip 51 to the first mirror 61 is orthogonal to the polarization direction of the third light propagating from the third semiconductor laser chip 53 to the third mirror 63. Furthermore, the third light is reflected by the third reflecting surface 63a of the third mirror 63 and propagates as third reflected light in a third direction perpendicular to the principal surface 21. Here, as the third light is reflected by the third mirror 63, the direction of the fast axis Af changes but the direction of the slow axis As does not change. Therefore, the polarization direction of the third reflected light is parallel to the first direction, similar to that of the second reflected light L22.

[0064] As described above, the polarization directions of the first reflected light, the second reflected light, and the third reflected light are all parallel to the first direction. The polarization directions of the first output light, the second output light, and the third output light are also parallel to the first direction. Furthermore, the multi-wavelength light source module 10 according to this embodiment emits light from the multiple first semiconductor laser chips 51, the multiple second semiconductor laser chips 52, and the multiple third semiconductor laser chips 53. This allows the module to emit higher-power light than a multi-wavelength light source module including only a single first semiconductor laser chip 51, a single second semiconductor laser chip 52, and a single third semiconductor laser chip 53. Therefore, the multi-wavelength light source module 10 according to this embodiment can emit light with a uniform polarization direction and high power. Such a multi-wavelength light source module 10 is suitable, for example, as a light source for a time-resolved projector including a single liquid crystal display. The use of the multi-wavelength light source module 10 provides light with a uniform polarization direction, thereby reducing optical loss that occurs when filtering the light from the multi-wavelength light source module 10 with a polarizing filter. Furthermore, by using the multi-wavelength light source module 10, high-power light can be obtained, making it possible to realize a time-resolved projector that can project brighter images.

[0065] [1-3. Lens Shape] The shape of each lens according to this embodiment will be described. As shown in FIG. 4, the beam diameter of the first light L11 is larger in the fast axis Af direction than in the slow axis As direction. Like the first light L11, the beam diameter of the first reflected light L12 is also larger in the fast axis Af direction than in the slow axis As direction. For this reason, as shown in FIGS. 1 and 3, the dimension of the first lens 41, onto which the first reflected light L12 is incident, in the slow axis As direction (i.e., the second direction) may be smaller than the dimension in the fast axis Af direction (i.e., the first direction). That is, the width of each of the multiple first lenses 41 in the second direction may be smaller than the width in the first direction. The ratio of the dimension of the first reflected light L12 of the first lens 41 in the fast axis Af direction to the dimension in the slow axis As direction is, for example, approximately 2:1 to 6:1. In this way, the dimension of the first lens 41 in the slow axis As direction can be reduced. As with the first lens 41, the dimensions of the second lens 42 and the third lens 43 in the direction of the slow axis As of the second reflected light and the third reflected light, respectively, may be reduced. That is, the width of each of the multiple second lenses 42 in the first direction may be smaller than the width of each of the multiple third lenses 43 in the second direction. This makes it possible to reduce the dimensions of the multi-wavelength light source module 10 while suppressing light from entering the exterior of each lens.

[0066] 1 and 3, the dimensions in the second direction of the first lens 41 are different from those of the second lens 42 and the third lens 43. Accordingly, the number of first lenses 41 arranged in a row in the second direction may be different from the number of second lenses 42 arranged in a row in the second direction and the number of third lenses 43 arranged in a row in the second direction.

[0067] [1-4. Wiring] The layout of wiring for supplying power to each semiconductor laser chip according to this embodiment will be described with reference to Fig. 7. Fig. 7 is a plan view showing the layout of each set and wiring in the multi-wavelength light source module 10 according to this embodiment. Fig. 7 shows a plan view of the multi-wavelength light source module 10 with the cover 40 removed.

[0068] 7, the frame member 30 has two first positive electrode current terminals 91p, two first negative electrode current terminals 91n, one second positive electrode current terminal 92p, one second negative electrode current terminal 92n, one third positive electrode current terminal 93p, and one third negative electrode current terminal 93n for supplying current from the outside of the frame member 30 to each set disposed inside the frame member 30. The two first positive electrode current terminals 91p, the one second positive electrode current terminal 92p, and the one third positive electrode current terminal 93p are disposed at one end of the frame member 30 in the second direction (the left end in FIG. 7). The two first negative electrode current terminals 91n, the one second negative electrode current terminal 92n, and the one third negative electrode current terminal 93n are disposed at the other end of the frame member 30 in the second direction (the right end in FIG. 7). In this way, by arranging the positive current terminal and the negative current terminal separately, it is possible to simplify the design of a circuit including the multi-wavelength light source module 10. Furthermore, since it is easy to distinguish the arrangement of the positive current terminal and the negative current terminal, it is possible to reduce the occurrence of connection errors when connecting wiring to the multi-wavelength light source module 10. Each current terminal is a conductive member that penetrates from the outside to the inside of the frame member 30. When the frame member 30 is formed of a conductive material, each current terminal is electrically insulated from the frame member 30. Using each of these current terminals, current is supplied to each semiconductor laser chip from the outside of the multi-wavelength light source module 10.

[0069] In this embodiment, the multi-wavelength light source module 10 further includes four relay members 81 for the first set, one relay member 82 for the second set, and one relay member 83 for the third set.

[0070] The first set relay members 81 are members disposed adjacent to the first sets 11a to 11j. In this embodiment, the four first set relay members 81 are disposed adjacent to the first sets 11a, 11e, 11f, and 11j in the second direction, respectively. The first set relay members 81 include a conductive member 81e. The configuration of the conductive member 81e is not particularly limited. For example, an Au film or the like can be used as the conductive member 81e. In this embodiment, the first set relay member 81 further includes an insulating member 81d. The insulating member 81d is a member containing an insulating material and is disposed on the main surface 21 of the base 20. The insulating member 81d is not particularly limited as long as it can maintain electrical insulation between the base 20 and the conductive members 81e. For example, an insulating material such as AlN, SiC, SiN, or alumina can be used as the insulating member 81d. The conductive member 81e is disposed on the main surface 21 of the base 20 via the insulating member 81d. This makes it possible to maintain electrical insulation between the conductive member 81e and the base 20. In the present embodiment, the conductive member 81e is disposed on the upper surface of the insulating member 81d and is joined to the base 20 with a metallic joining material.

[0071] The second set relay member 82 is a member disposed adjacent to the plurality of second sets 12a to 12d. In the present embodiment, the second set relay member 82 is disposed adjacent to the plurality of second sets 12a to 12d in the first direction and includes a plurality of conductive members 82e1 to 82e5. The material of each of the conductive members 82e1 to 82e5 is the same as that of the conductive member 81e. In the present embodiment, the second set relay member 82 further includes an insulating member 82d. The insulating member 82d is a member containing an insulating material and is disposed on the main surface 21 of the base 20. The configuration of the insulating member 82d is the same as that of the insulating member 81d. In the present embodiment, the insulating member 82d has an elongated shape extending in the second direction. A plurality of conductive members 82e1 to 82e5 are disposed on the upper surface of the insulating member 82d while being electrically insulated from one another.

[0072] The plurality of conductive members 82e1 to 82e5 are arranged in the second direction. The conductive member 82e1 is disposed adjacent to the second positive electrode current terminal 92p and the second set 12a. The conductive member 82e2 is disposed adjacent to the second set 12a and the second set 12b. The conductive member 82e3 is disposed adjacent to the second set 12b and the second set 12c. The conductive member 82e4 is disposed adjacent to the second set 12c and the second set 12d. The conductive member 82e5 is disposed adjacent to the second set 12d and the second negative electrode current terminal 92n.

[0073] The second set relay member 82 may include a plurality of insulating members. For example, the second set relay member 82 may include a plurality of insulating members on which the plurality of conductive members 82e1 to 82e5 are respectively arranged.

[0074] The third set relay member 83 is a member disposed adjacent to the plurality of third sets 13a to 13d. In the present embodiment, the third set relay member 83 is disposed adjacent to the plurality of third sets 13a to 13d in the first direction and includes a plurality of conductive members 83e1 to 83e5. The conductive members 83e1 to 83e5 are made of the same material as the conductive member 81e. In the present embodiment, the third set relay member 83 further includes an insulating member 83d. The insulating member 83d is a member containing an insulating material and is disposed on the main surface 21 of the base 20. The configuration of the insulating member 83d is the same as the configuration of the insulating member 81d. In the present embodiment, the insulating member 83d has an elongated shape extending in the second direction. A plurality of conductive members 83e1 to 83e5 are disposed on the upper surface of the insulating member 83d while being electrically insulated from one another.

[0075] The plurality of conductive members 83e1 to 83e5 are arranged in the second direction. The conductive member 83e1 is disposed adjacent to the third positive electrode current terminal 93p and the third set 13a. The conductive member 83e2 is disposed adjacent to the third set 13a and the third set 13b. The conductive member 83e3 is disposed adjacent to the third set 13b and the third set 13c. The conductive member 83e4 is disposed adjacent to the third set 13c and the third set 13d. The conductive member 83e5 is disposed adjacent to the third set 13d and the third negative electrode current terminal 93n.

[0076] The third set relay member 83 may include a plurality of insulating members. For example, the third set relay member 83 may include a plurality of insulating members on which the plurality of conductive members 83e1 to 83e5 are respectively arranged.

[0077] The first sets 11a to 11j are electrically connected in series using a plurality of first wires W1. The first wires W1 are conductive wires. There are no particular limitations on the first wires W1 as long as they are conductive wires. In this embodiment, the first wires W1 are wires containing Au. Specifically, one or more first wires W1 connect an n-side connection electrode (not shown) of the first semiconductor laser chip 51 of the first set 11a to a p-side connection electrode 71e formed on the first submount 71 of the adjacent first set 11b. The p-side connection electrode 71e is electrically connected to a p-side electrode (not shown) of the first semiconductor laser chip 51 mounted on the first submount 71. In this way, the n-side connection electrode of the first semiconductor laser chip 51 of the first set 11a is electrically connected to the p-side electrode of the first semiconductor laser chip 51 of the first set 11b. Similarly, the n-side connection electrodes of the first semiconductor laser chips 51 of the first sets 11b, 11c, and 11d are electrically connected to the p-side connection electrodes 71e of the first submounts 71 of the adjacent first sets 11c, 11d, and 11e, respectively. Also, the n-side connection electrodes of the first semiconductor laser chips 51 of the first sets 11f, 11g, 11h, and 11i are electrically connected to the p-side connection electrodes 71e of the first submounts 71 of the adjacent first sets 11g, 11h, 11i, and 11j, respectively.

[0078] One of the two first positive electrode current terminals 91p and the p-side connection electrode 71e of the first set 11a are electrically connected using a first wire W1 and one first-set relay member 81. The one first-set relay member 81 is disposed adjacent to the first positive electrode current terminal 91p and the first set 11a. A portion of the first positive electrode current terminal 91p located within the area surrounded by the frame member 30 is electrically connected to the conductive member 81e of the first-set relay member 81 using one or more first wires W1. Furthermore, the conductive member 81e of the first-set relay member 81 is electrically connected to the p-side connection electrode 71e of the first set 11a using one or more first wires W1. Similarly, the other of the two first positive electrode current terminals 91p and the p-side connection electrode 71e of the first set 11f are electrically connected using one first set relay member 81 and a first wire W1.

[0079] One of the two first negative electrode current terminals 91n is electrically connected to the n-side connection electrode of the first semiconductor laser chip 51 of the first set 11e using one first set relay member 81 and a first wire W1. The one first set relay member 81 is disposed adjacent to the first negative electrode current terminal 91n and the first set 11e. A portion of the first negative electrode current terminal 91n located within the area surrounded by the frame member 30 is electrically connected to the conductive member 81e of the first set relay member 81 using one or more first wires W1. Furthermore, the conductive member 81e of the first set relay member 81 is electrically connected to the n-side connection electrode of the first semiconductor laser chip 51 of the first set 11e using one or more first wires W1. Similarly, the other of the two first negative electrode current terminals 91n is electrically connected to the n-side connection electrode of the first semiconductor laser chip 51 of the first set 11j using one first set relay member 81 and a first wire W1.

[0080] With the above configuration, current can be supplied from one first positive electrode current terminal 91p and one first negative electrode current terminal 91n to the five first sets 11a to 11e that are electrically connected in series, and current can also be supplied from one first positive electrode current terminal 91p and one first negative electrode current terminal 91n to the five first sets 11f to 11j that are electrically connected in series.

[0081] The second sets 12a to 12d are electrically connected in series using a plurality of second wires W2 and a second-set relay member 82. The second wires W2 have the same configuration as the first wires W1. In this embodiment, an n-side connection electrode (not shown) of the second semiconductor laser chip 52 of the second set 12a is electrically connected to a p-side connection electrode 72e formed on the second submount 72 of the second set 12b using one or more second wires W2 and a conductive member 82e2 of the second-set relay member 82. Specifically, the n-side connection electrode (not shown) of the second semiconductor laser chip 52 of the second set 12a is connected to the conductive member 82e2 by one or more second wires W2. Furthermore, the conductive member 82e2 is connected to the p-side connection electrode 72e of the second set 12b by one or more second wires W2. The p-side connection electrode 72e is electrically connected to a p-side electrode (not shown) of the second semiconductor laser chip 52 mounted on the second submount 72. In this way, the n-side connection electrodes of the second semiconductor laser chips 52 in the second set 12a are electrically connected to the p-side electrodes of the second semiconductor laser chips 52 in the second set 12b. Similarly, the n-side connection electrodes of the second semiconductor laser chips 52 in the second set 12b are electrically connected to the p-side electrodes of the second semiconductor laser chips 52 in the second set 12c using the second wire W2 and the conductive member 82e3. The n-side connection electrodes of the second semiconductor laser chips 52 in the second set 12c are electrically connected to the p-side electrodes of the second semiconductor laser chips 52 in the second set 12d using the second wire W2 and the conductive member 82e4.

[0082] The second positive electrode current terminal 92p and the p-side connection electrode 72e of the second set 12a are electrically connected using a second wire W2 and a second-set relay member 82. Specifically, a portion of the second positive electrode current terminal 92p located within the region surrounded by the frame member 30 is electrically connected to the conductive member 82e1 of the second-set relay member 82 using one or more second wires W2. Furthermore, the conductive member 82e1 and the p-side connection electrode 72e of the second set 12a are electrically connected using one or more second wires W2.

[0083] The second negative electrode current terminal 92n and the n-side connection electrode of the second semiconductor laser chip 52 of the second set 12d are electrically connected using a second wire W2 and the second set relay member 82. Specifically, a portion of the second negative electrode current terminal 92n located within the area surrounded by the frame member 30 is electrically connected to the conductive member 82e5 of the second set relay member 82 using one or more second wires W2. In addition, the conductive member 82e5 and the n-side connection electrode of the second semiconductor laser chip 52 of the second set 12d are electrically connected to one or more second wires W2.

[0084] With the above configuration, current can be supplied from the second positive electrode current terminal 92p and the second negative electrode current terminal 92n to the four second sets 12a to 12d electrically connected in series.

[0085] The third sets 13a to 13d are electrically connected in series using a plurality of third wires W3 and a third-set relay member 83. The third wires W3 have the same configuration as the first wires W1. In this embodiment, an n-side connection electrode (not shown) of the third semiconductor laser chip 53 of the third set 13a is electrically connected to a p-side connection electrode 73e formed on the third submount 73 of the third set 13b using one or more third wires W3 and a conductive member 83e2 of the third-set relay member 83. Specifically, the n-side connection electrode (not shown) of the third semiconductor laser chip 53 of the third set 13a is connected to the conductive member 83e2 by one or more third wires W3. Furthermore, the conductive member 83e2 is connected to the p-side connection electrode 73e of the third set 13b by one or more third wires W3. The p-side connection electrode 73e is electrically connected to a p-side electrode (not shown) of the third semiconductor laser chip 53 mounted on the third submount 73. In this way, the n-side connecting electrode of the third semiconductor laser chip 53 in the third set 13a is electrically connected to the p-side electrode of the third semiconductor laser chip 53 in the third set 13b. Similarly, the n-side connecting electrode of the third semiconductor laser chip 53 in the third set 13b is electrically connected to the p-side electrode of the third semiconductor laser chip 53 in the third set 13c using the third wire W3 and the conductive member 83e3. The n-side connecting electrode of the third semiconductor laser chip 53 in the third set 13c is electrically connected to the p-side electrode of the third semiconductor laser chip 53 in the third set 13d using the third wire W3 and the conductive member 83e4.

[0086] The third positive electrode current terminal 93p and the p-side connection electrode 73e of the third set 13a are electrically connected using a third wire W3 and a third-set relay member 83. Specifically, a portion of the third positive electrode current terminal 93p located within the area surrounded by the frame member 30 is electrically connected to the conductive member 83e1 of the third-set relay member 83 using one or more third wires W3. Furthermore, the conductive member 83e1 and the p-side connection electrode 73e of the third set 13a are electrically connected using one or more third wires W3.

[0087] The third negative electrode current terminal 93n and the n-side connection electrode of the third semiconductor laser chip 53 of the third set 13d are electrically connected using a third wire W3 and the third set relay member 83. Specifically, a portion of the third negative electrode current terminal 93n located within the area surrounded by the frame member 30 is electrically connected to the conductive member 83e5 of the third set relay member 83 using one or more third wires W3. In addition, the conductive member 83e5 and the n-side connection electrode of the third semiconductor laser chip 53 of the third set 13d are electrically connected using one or more third wires W3.

[0088] With the above configuration, current can be supplied from the third positive electrode current terminal 93p and the third negative electrode current terminal 93n to the four third sets 13a to 13d electrically connected in series.

[0089] In this embodiment, the plurality of second sets 12a to 12d are arranged in the second direction, and the second optical axes of each of the plurality of second sets 12a to 12d are parallel to the second direction. Accordingly, a second mirror 62 is disposed between two adjacent second semiconductor laser chips 52. Therefore, a second wire W2 for electrically connecting the two adjacent second semiconductor laser chips 52 may interfere with the second mirror 62 and the second light. However, in this embodiment, the two adjacent second semiconductor laser chips 52 are electrically connected via a second set relay member 82 disposed adjacent to the plurality of second sets 12a to 12d in the first direction, thereby suppressing interference between the second wire W2 and the second mirror 62 and the second light.

[0090] Furthermore, the amount of the second wire W2 used can be reduced by using the second set relay member 82. In particular, when the second wire W2 contains Au as in the present embodiment, the amount of the second wire W2 used can be reduced, thereby reducing costs.

[0091] In the present embodiment, the second set relay member 82 and the conductive members 82e2 to 82e5 are disposed at positions adjacent in the first direction to the second mirror 62. By using such conductive members 82e2 to 82e5, two adjacent second semiconductor laser chips 52 can be electrically connected, bypassing the second mirror 62, and therefore interference between the second wire W2 and the second mirror 62 and the second light can be more reliably suppressed.

[0092] Similarly to the second sets 12a to 12d, the third sets 13a to 13d also use the third wire W3 and the third set relay member 83, thereby suppressing interference between the third wire W3 and the third mirror 63 and the third light. The third set relay member 83 and the conductive members 83e2 to 83e5 are disposed in positions adjacent to the third mirror 63 in the first direction. Use of such conductive members 83e2 to 83e5 more reliably suppresses interference between the third wire W3 and the third mirror 63 and the third light.

[0093] (Embodiment 2) A multi-wavelength light source module according to embodiment 2 will be described. The multi-wavelength light source module according to this embodiment differs from the multi-wavelength light source module 10 according to embodiment 1 mainly in the arrangement direction of the second set and the third set. The multi-wavelength light source module according to this embodiment will be described below with reference to FIG. 8, focusing on the differences from the multi-wavelength light source module 10 according to embodiment 1.

[0094] Fig. 8 is a plan view showing the layout of each set and wiring in the multi-wavelength light source module 110 according to this embodiment. Fig. 8 shows a plan view of the multi-wavelength light source module 110 with the cover removed.

[0095] 8, a multi-wavelength light source module 110 according to this embodiment includes a base 20, a plurality of first sets 11a-11h, and a plurality of second sets 12a-12d. In this embodiment, the multi-wavelength light source module 110 further includes a plurality of third sets 13a-13d, a frame member 30, two first positive electrode current terminals 91p, two first negative electrode current terminals 91n, a second positive electrode current terminal 92p, a second negative electrode current terminal 92n, a third positive electrode current terminal 93p, a third negative electrode current terminal 93n, a first wire W1, a second wire W2, a third wire W3, four first set relay members 81, second set relay members 182a and 182b, and third set relay members 183a and 183b. Although not shown in FIG. 8, the multi-wavelength light source module 110 further includes a cover having lenses arranged at positions corresponding to each set, similar to the multi-wavelength light source module 10 according to the first embodiment.

[0096] The plurality of first sets 11a to 11h according to the present embodiment differ from the first sets 11a to 11j according to the first embodiment in terms of the number of pieces, but have the same configuration apart from the number of pieces.

[0097] The second optical axis of each of the plurality of second sets 12a to 12d is parallel to the second direction, as in the first embodiment. In this embodiment, the plurality of second sets 12a to 12d are arranged in a line in the first direction. The plurality of second sets 12a to 12d are electrically connected in series using the second wire W2. In this embodiment, the second mirror 62 or the like is not disposed between two adjacent second semiconductor laser chips 52, and therefore the two adjacent second semiconductor laser chips 52 are electrically connected only by the second wire W2 without using a relay member or the like. This makes it possible to reduce the amount of relay member and second wire W2 used.

[0098] The second positive current terminal 92p and the p-side connection electrode 72e of the second set 12d are electrically connected using a second wire W2 and a second set relay member 182b. The second set relay member 182b is disposed adjacent to the second set 12d in the second direction. The second set relay member 182b includes a conductive member 182e2 and an insulating member 182d2. The conductive member 182e2 is disposed on the upper surface of the insulating member 182d2.

[0099] A portion of the second positive electrode current terminal 92p located within the region surrounded by the frame member 30 is electrically connected to the conductive member 182e2 of the second set relay member 182b using one or more second wires W2. In addition, the conductive member 182e2 is electrically connected to the p-side connection electrode 72e of the second set 12d using one or more second wires W2.

[0100] The second negative electrode current terminal 92n and the n-side connection electrode of the second semiconductor laser chip 52 of the second set 12a are electrically connected using a second wire W2 and a second set relay member 182a. The second set relay member 182a is disposed adjacent to the second set 12a in the first direction. The second set relay member 182a includes a conductive member 182e1 and an insulating member 182d1. The conductive member 182e1 is disposed on the upper surface of the insulating member 182d1.

[0101] A portion of the second negative electrode current terminal 92n located within the region surrounded by the frame member 30 is electrically connected to the conductive member 182e1 of the second set relay member 182a using one or more second wires W2. In addition, the conductive member 182e1 is electrically connected to the n-side connection electrode of the second semiconductor laser chip 52 of the second set 12a using one or more second wires W2. In this way, by using the second set relay member 182a adjacent to the second set 12a in the first direction, the amount of second wires W2 used can be reduced.

[0102] With the above configuration, current can be supplied from the second positive electrode current terminal 92p and the second negative electrode current terminal 92n to the four second sets 12a to 12d electrically connected in series.

[0103] The third optical axis of each of the plurality of third sets 13a to 13d is parallel to the second direction, as in the first embodiment. In this embodiment, the plurality of third sets 13a to 13d are arranged in a row in the first direction. The plurality of third sets 13a to 13d are electrically connected in series using a third wire W3. In this embodiment, a third mirror 63 or the like is not disposed between two adjacent third semiconductor laser chips 53, and therefore, the two adjacent third semiconductor laser chips 53 are electrically connected only by the third wire W3 without using a relay member or the like. This makes it possible to reduce the amount of relay member and third wire W3 used.

[0104] The third positive current terminal 93p and the p-side connection electrode 73e of the third set 13d are electrically connected using a third wire W3 and a third set relay member 183b. The third set relay member 183b is disposed adjacent to the third set 13d in the first direction. The third set relay member 183b includes a conductive member 183e2 and an insulating member 183d2. The conductive member 183e2 is disposed on the upper surface of the insulating member 183d2.

[0105] A portion of the third positive electrode current terminal 93p located within the region surrounded by the frame member 30 is electrically connected to the conductive member 183e2 of the third set relay member 183b using one or more third wires W3. The conductive member 183e2 is also electrically connected to the p-side connection electrode 73e of the third set 13d using one or more third wires W3. By using the third set relay member 183b adjacent to the third mirror 63 of the third set 13d in the first direction in this manner, interference between the third wires W3 and the third mirror 63 and third light of the third set 13d can be suppressed. Furthermore, the amount of third wires W3 used can be reduced.

[0106] The third negative electrode current terminal 93n and the n-side connection electrode of the third semiconductor laser chip 53 of the third set 13a are electrically connected using a third wire W3 and a third set relay member 183a. The third set relay member 183a is disposed adjacent to the third set 13a in the first direction. The third set relay member 183a includes a conductive member 183e1 and an insulating member 183d1. The conductive member 183e1 is disposed on the upper surface of the insulating member 183d1.

[0107] A portion of the third negative electrode current terminal 93n located within the area surrounded by the frame member 30 is electrically connected to the conductive member 183e1 of the third set relay member 183a using one or more third wires W3. The conductive member 183e1 is also electrically connected to the n-side connecting electrode of the third semiconductor laser chip 53 of the third set 13a using one or more third wires W3. By using the third set relay member 183a adjacent to the third mirror 63 of the third set 13a in the first direction in this manner, interference between the third wires W3 and the third mirror 63 and third light of the third set 13a can be suppressed. Furthermore, the amount of third wires W3 used can be reduced.

[0108] With the above configuration, current can be supplied from the third positive electrode current terminal 93p and the third negative electrode current terminal 93n to the four third sets 13a to 13d electrically connected in series.

[0109] Furthermore, similar to the multi-wavelength light source module 10 according to the first embodiment, the multi-wavelength light source module 110 according to the present embodiment also has a uniform polarization direction and can emit high-power light.

[0110] (Embodiment 3) A multi-wavelength light source module according to embodiment 3 will be described. The multi-wavelength light source module according to this embodiment differs from the multi-wavelength light source module 110 according to embodiment 2 mainly in the arrangement of the third sets 13a to 13d. The multi-wavelength light source module according to this embodiment will be described below with reference to FIG. 9, focusing on the differences from the multi-wavelength light source module 110 according to embodiment 2.

[0111] Fig. 9 is a plan view showing the layout of each set and wiring in the multi-wavelength light source module 210 according to this embodiment. Fig. 9 shows a plan view showing the multi-wavelength light source module 210 with the cover removed.

[0112] 9, a multi-wavelength light source module 210 according to this embodiment includes a base 20, a plurality of first sets 11a-11h, and a plurality of second sets 12a-12d. In this embodiment, the multi-wavelength light source module 210 further includes a plurality of third sets 13a-13d, a frame member 30, two first positive electrode current terminals 91p, two first negative electrode current terminals 91n, a second positive electrode current terminal 92p, a second negative electrode current terminal 92n, a third positive electrode current terminal 93p, a third negative electrode current terminal 93n, a first wire W1, a second wire W2, a third wire W3, four first set relay members 81, second set relay members 182a and 182b, and third set relay members 183c and 183d. Although not shown in FIG. 9, the multi-wavelength light source module 210 further includes a cover having lenses arranged at positions corresponding to each set, similar to the multi-wavelength light source module 10 according to the first embodiment.

[0113] In each of the third sets 13a to 13d according to the present embodiment, the third semiconductor laser chip 53 is disposed at a position closer to the end of the main surface 21 than the third mirror 63 in the direction of the third optical axis. In other words, the third semiconductor laser chip 53 emits the third light from the outside toward the inside of the area on the main surface 21. This prevents the third mirror 63 from being disposed between the third semiconductor laser chip 53 and the third positive current terminal 93p and the third negative current terminal 93n disposed at the end of the main surface 21. This prevents interference between the third wire W3 connecting each current terminal to the third semiconductor laser chip 53 and the third mirror 63 and the third light.

[0114] The third positive current terminal 93p and the p-side connection electrode 73e of the third set 13d according to this embodiment are electrically connected using a third wire W3 and a third set relay member 183d. The third set relay member 183d is disposed adjacent to the third set 13d in the second direction. The third set relay member 183d includes a conductive member 183e4 and an insulating member 183d4. The conductive member 183e4 is disposed on the upper surface of the insulating member 183d4.

[0115] A portion of the third positive electrode current terminal 93p located within the region surrounded by the frame member 30 is electrically connected to the conductive member 183e4 of the third set relay member 183d using one or more third wires W3. In addition, the conductive member 183e4 is electrically connected to the p-side connection electrode 73e of the third set 13d using one or more third wires W3.

[0116] The third negative electrode current terminal 93n and the n-side connection electrode of the third semiconductor laser chip 53 of the third set 13a are electrically connected using a third wire W3 and a third set relay member 183c. The third set relay member 183c is disposed adjacent to the third set 13a in the first direction. The third set relay member 183c includes a conductive member 183e3 and an insulating member 183d3. The conductive member 183e3 is disposed on the upper surface of the insulating member 183d3.

[0117] A portion of the third negative electrode current terminal 93n located within the region surrounded by the frame member 30 is electrically connected to the conductive member 183e3 of the third set relay member 183c using one or more third wires W3. Furthermore, the conductive member 183e3 is electrically connected to the n-side connecting electrode of the third semiconductor laser chip 53 of the third set 13a using one or more third wires W3. In this way, by using the third set relay member 183c adjacent to the third set 13a in the first direction, the amount of third wires W3 used can be reduced.

[0118] As described above, in the present embodiment, the third semiconductor laser chip 53 is disposed closer to the end of the main surface 21 in the direction of the third optical axis than the third mirror 63. This makes it possible to prevent interference between the third wires W3 connecting the current terminals and the third semiconductor laser chip 53 and the third mirror 63 and the third light. Furthermore, the third set relay members 183c and 183d can be made smaller.

[0119] In this embodiment, also in each of the second sets 12a to 12d, similarly to the third sets 13a to 13d, the second semiconductor laser chip 52 is disposed at a position closer to the end of the main surface 21 in the direction of the second optical axis than the second mirror 62. This makes it possible to suppress interference between the second wire W2 connecting each current terminal and the second semiconductor laser chip 52 and the second mirror 62 and the second light.

[0120] Furthermore, similar to the multi-wavelength light source module 10 according to the first embodiment, the multi-wavelength light source module 210 according to the present embodiment also has a uniform polarization direction and can emit high-power light.

[0121] (Fourth embodiment) A multi-wavelength light source module according to embodiment 4 will be described. The multi-wavelength light source module according to this embodiment differs from the multi-wavelength light source module 10 according to embodiment 1 mainly in the arrangement of the second sets 12a to 12d and the third sets 13a to 13d. The multi-wavelength light source module according to this embodiment will be described below with reference to FIG. 10, focusing on the differences from the multi-wavelength light source module 10 according to embodiment 1.

[0122] Fig. 10 is a plan view showing the layout of each set and wiring in a multi-wavelength light source module 310 according to this embodiment. Fig. 10 shows a plan view of the multi-wavelength light source module 310 with the cover removed.

[0123] 10 , a multi-wavelength light source module 310 according to the present embodiment includes a base 20, a plurality of first sets 11a-11j, and a plurality of second sets 12a-12d. In the present embodiment, the multi-wavelength light source module 310 further includes a plurality of third sets 13a-13d, a frame member 30, two first positive electrode current terminals 91p, two first negative electrode current terminals 91n, a second positive electrode current terminal 92p, a second negative electrode current terminal 92n, a third positive electrode current terminal 93p, a third negative electrode current terminal 93n, a first wire W1, a second wire W2, a third wire W3, four first set relay members 81, second set relay members 382a-382c, and third set relay members 383a-383c. Although not shown in FIG. 10, the multi-wavelength light source module 310 further includes a cover having lenses arranged at positions corresponding to each set, similar to the multi-wavelength light source module 10 according to the first embodiment.

[0124] The second set relay member 382a includes a conductive member 382e1 and an insulating member 382d1. The conductive member 382e1 is disposed on the upper surface of the insulating member 382d1. The second set relay member 382a is disposed adjacent to the second set 12a in the first direction. The second set relay member 382a is also disposed adjacent to the second positive current terminal 92p.

[0125] The second set relay member 382b includes a conductive member 382e2 and an insulating member 382d2. The conductive member 382e2 is disposed on the upper surface of the insulating member 382d2. The second set relay member 382b extends in the second direction and is disposed adjacent to the second sets 12b and 12c and the third set 13a in the first direction, with the third set relay member 383a interposed therebetween.

[0126] The second set relay member 382c includes a conductive member 382e3 and an insulating member 382d3. The conductive member 382e3 is disposed on the upper surface of the insulating member 382d3. The second set relay member 382c extends in the second direction and is disposed adjacent to the second set 12d and the third set 13c in the first direction. The second set relay member 382c is also disposed adjacent to the second negative current terminal 92n.

[0127] The third set relay member 383a includes a conductive member 383e1 and an insulating member 383d1. The conductive member 383e1 is disposed on the upper surface of the insulating member 383d1. The third set relay member 383a extends in the second direction and is disposed adjacent to the second set 12b and the third set 13a in the first direction. The third set relay member 383a is also disposed adjacent to the third positive current terminal 93p.

[0128] The third set relay member 383b includes a conductive member 383e2 and an insulating member 383d2. The conductive member 383e2 is disposed on the upper surface of the insulating member 383d2. The third set relay member 383b extends in the second direction and is disposed adjacent to the second set 12d and the third sets 13b and 13c in the first direction, with the second set relay member 382c interposed therebetween.

[0129] The third set relay member 383c includes a conductive member 383e3 and an insulating member 383d3. The conductive member 383e3 is disposed on the upper surface of the insulating member 383d3. The third set relay member 383c extends in the second direction and is disposed adjacent to the third set 13d in the first direction. The third set relay member 383c is also disposed adjacent to the third negative electrode current terminal 93n.

[0130] In the multi-wavelength light source module 310 according to this embodiment, a plurality of second sets 12a to 12d and a plurality of third sets are alternately arranged in the second direction. Specifically, as shown in Fig. 10, the second set 12a, the third set 13b, the second set 12d, and the third set 13c are arranged in this order in the second direction. Furthermore, the second set 12b, the third set 13a, the second set 12c, and the third set 13d are arranged in this order in the second direction. By arranging the second sets 12a to 12d and the third sets 13a to 13d in this manner, it is possible to suppress bias in the intensity distribution of the second light and the third light in the light emitted from the multi-wavelength light source module 310.

[0131] Furthermore, the second sets 12a and 12b are arranged in the first direction, and the second sets 12c and 12d are arranged in the first direction. The third sets 13a and 13b are arranged in the first direction, and the third sets 13c and 13d are arranged in the first direction. In this manner, of the plurality of second sets 12a to 12d, at least two second sets may be arranged in the first direction. Furthermore, of the plurality of third sets 13a to 13d, at least two third sets may be arranged in the first direction.

[0132] In this embodiment, the second sets 12a to 12d are electrically connected in series using second wires W2 and second-set relay members 382a to 382c. Specifically, the n-side connection electrode of the second semiconductor laser chip 52 of the second set 12a is connected to the p-side connection electrode 72e of the second set 12b by one or more second wires W2. The n-side connection electrode of the second semiconductor laser chip 52 of the second set 12b is connected to the conductive member 382e2 of the second-set relay member 382b by one or more second wires W2. Here, as shown in FIG. 10, the second wires W2 pass above the third-set relay member 383a (i.e., straddle the third-set relay member 383a). In other words, the third-set relay member 383a is disposed between the second wires W2 and the main surface 21. Therefore, the third-set relay member 383a may be lower in height from the main surface 21 than the second-set relay member 382b. This can prevent interference between the second wire W2 and the third set relay member 383a.

[0133] Furthermore, the conductive member 382e2 of the second set relay member 382b and the p-side connection electrode 72e of the second set 12c are connected by one or more second wires W2. The n-side connection electrode of the second semiconductor laser chip 52 of the second set 12c and the p-side connection electrode 72e of the second set 12d are connected by one or more second wires W2.

[0134] As described above, in this embodiment, the multiple second sets 12a to 12d include two second sets 12b and 12c adjacent to each other in the second direction. The second-set relay member 382b is disposed adjacent to the two second sets 12b and 12c in the first direction. The n-side connection electrode of the second semiconductor laser chip 52 included in one second set 12b of the two second sets 12b and 12c is disposed between the p-side connection electrode 72e included in the other second set 12b and the second-set relay member 382b, and is electrically connected to the second-set relay member 382b using one or more second wires W2.

[0135] Furthermore, the p-side connection electrode 72e of the other second set 12c of the two second sets 12b and 12c is arranged between the n-side connection electrode of the second semiconductor laser chip 52 of the other second set 12c and the relay member 382b for the second set, and is electrically connected to the relay member 382b for the second set.

[0136] The second positive electrode current terminal 92p and the p-side connection electrode 72e of the second set 12a are electrically connected using a second wire W2 and a second-set relay member 382a. Specifically, a portion of the second positive electrode current terminal 92p located within the area surrounded by the frame member 30 is electrically connected to the conductive member 382e1 of the second-set relay member 382a using one or more second wires W2. Furthermore, the conductive member 382e1 and the p-side connection electrode 72e of the second set 12a are electrically connected using one or more second wires W2.

[0137] The second negative electrode current terminal 92n and the n-side connection electrode of the second semiconductor laser chip 52 of the second set 12d are electrically connected using a second wire W2 and a second-set relay member 382c. Specifically, a portion of the second negative electrode current terminal 92n located within the area surrounded by the frame member 30 is electrically connected to the conductive member 382e3 of the second-set relay member 382c using one or more second wires W2. In addition, the conductive member 382e3 and the n-side connection electrode of the second semiconductor laser chip 52 of the second set 12d are electrically connected using one or more second wires W2.

[0138] With the above configuration, the multiple second sets 12a-12d are electrically connected in series. Furthermore, current can be supplied from the second positive current terminal 92p and the second negative current terminal 92n to the four second sets 12a-12d that are electrically connected in series. Furthermore, by using the second set relay member 382b adjacent to the second sets 12b and 12c in the first direction and the second set relay member 382c adjacent to the second set 12d in the first direction, the amount of second wire W2 used can be reduced. Furthermore, the second set relay member 382b is positioned adjacent to the second mirror 62 of the second set 12b in the first direction. Furthermore, the second set relay member 382c is positioned adjacent to the second mirror 62 of the second set 12d in the first direction. By using the second set relay member 382b, the second semiconductor laser chip 52 of the second set 12b and the second semiconductor laser chip 52 of the second set 12c can be electrically connected to each other, bypassing the second mirror 62. Furthermore, by using the second set relay member 382c, the second semiconductor laser chip 52 and the second negative current terminal 92n can be electrically connected to each other, bypassing the second mirror 62. Therefore, interference between the second wire W2 and the second mirror 62 and the second light can be suppressed.

[0139] In this embodiment, the third sets 13a to 13d are electrically connected in series using third wires W3 and third-set relay members 383a to 383c. Specifically, the n-side connection electrode of the third semiconductor laser chip 53 of the third set 13a is connected to the p-side connection electrode 73e of the third set 13b by one or more third wires W3. The n-side connection electrode of the third semiconductor laser chip 53 of the third set 13b is connected to the conductive member 383e2 of the third-set relay member 383b by one or more third wires W3. The conductive member 383e2 of the third-set relay member 383b is connected to the p-side connection electrode 73e of the third set 13c by one or more third wires W3. The n-side connection electrode of the third semiconductor laser chip 53 of the third set 13c is connected to the p-side connection electrode 73e of the third set 13d by one or more third wires W3.

[0140] 10, the third wire W3 passes above the second set relay member 382c (i.e., straddles the second set relay member 382c). In other words, the second set relay member 382c is disposed between the third wire W3 and the main surface 21. Therefore, the height of the second set relay member 382c from the main surface 21 may be lower than that of the third set relay member 383b. This can prevent interference between the third wire W3 and the second set relay member 382c.

[0141] As described above, in this embodiment, the plurality of third sets 13a to 13d include two third sets 13b and 13c adjacent to each other in the second direction. The third set relay member 383b is disposed adjacent to the two third sets 13b and 13c in the first direction. The n-side connection electrode of the third semiconductor laser chip 53 included in one third set 13b of the two third sets 13b and 13c is disposed between the p-side connection electrode 73e included in the other third set 13b and the third set relay member 383b, and is electrically connected to the third set relay member 383b using one or more third wires W3.

[0142] Furthermore, the p-side connection electrode 73e of the other third set 13c of the two third sets 13b and 13c is arranged between the n-side connection electrode of the third semiconductor laser chip 53 of the other third set 13c and the relay member 383b for the third set, and is electrically connected to the relay member 383b for the third set.

[0143] The third positive electrode current terminal 93p and the p-side connection electrode 73e of the third set 13a are electrically connected using a third wire W3 and a third-set relay member 383a. Specifically, a portion of the third positive electrode current terminal 93p located within the area surrounded by the frame member 30 is electrically connected to the conductive member 383e1 of the third-set relay member 383a using one or more third wires W3. Furthermore, the conductive member 383e1 and the p-side connection electrode 73e of the third set 13a are electrically connected using one or more third wires W3.

[0144] The third negative electrode current terminal 93n and the n-side connection electrode of the third semiconductor laser chip 53 of the third set 13d are electrically connected using a third wire W3 and a third set relay member 383c. Specifically, a portion of the third negative electrode current terminal 93n located within the area surrounded by the frame member 30 is electrically connected to the conductive member 383e3 of the third set relay member 383c using one or more third wires W3. In addition, the conductive member 383e3 and the n-side connection electrode of the third semiconductor laser chip 53 of the third set 13d are electrically connected using one or more third wires W3.

[0145] With the above configuration, the multiple third sets 13a to 13d are electrically connected in series. Furthermore, current can be supplied from the third positive current terminal 93p and the third negative current terminal 93n to the four third sets 13a to 13d, which are electrically connected in series. Furthermore, the third set relay members 383a and 383b are disposed adjacent to the third mirrors 63 of the third sets 13a and 13c, respectively, in the first direction. By using such a third set relay member 383a, the third positive current terminal 93p can be electrically connected to the third semiconductor laser chip 53 of the third set 13a, bypassing the third mirror 63. Furthermore, by using such a third set relay member 383b, the third semiconductor laser chip 53 of the third set 13b can be electrically connected to the third semiconductor laser chip 53 of the third set 13c. Therefore, interference between the third wire W3 and the third mirror 63 and the third light can be suppressed.

[0146] Furthermore, similar to the multi-wavelength light source module 10 according to the first embodiment, the multi-wavelength light source module 310 according to the present embodiment also has a uniform polarization direction and can emit high-power light.

[0147] (Embodiment 5) A multi-wavelength light source module according to embodiment 5 will be described. The multi-wavelength light source module according to this embodiment differs from the multi-wavelength light source module 310 according to embodiment 4 mainly in the arrangement of the first sets 11a to 11j. The multi-wavelength light source module according to this embodiment will be described below with reference to FIG. 11, focusing on the differences from the multi-wavelength light source module 310 according to embodiment 4.

[0148] Fig. 11 is a plan view showing the layout of each set and wiring in a multi-wavelength light source module 410 according to this embodiment. Fig. 11 shows a plan view of the multi-wavelength light source module 410 with the cover removed.

[0149] 11 , a multi-wavelength light source module 410 according to the present embodiment includes a base 20, a plurality of first sets 11a-11j, and a plurality of second sets 12a-12d. In the present embodiment, the multi-wavelength light source module 410 further includes a plurality of third sets 13a-13d, a frame member 30, two first positive electrode current terminals 91p, two first negative electrode current terminals 91n, a second positive electrode current terminal 92p, a second negative electrode current terminal 92n, a third positive electrode current terminal 93p, a third negative electrode current terminal 93n, a first wire W1, a second wire W2, a third wire W3, four first set relay members 81, second set relay members 382a-382c, and third set relay members 383a-383c. Although not shown in FIG. 11, the multi-wavelength light source module 410 further includes a cover having lenses arranged at positions corresponding to each set, similar to the multi-wavelength light source module 10 according to the first embodiment.

[0150] In this embodiment, as shown in FIG. 11, the multiple first sets 11a to 11j include a first group including one or more first sets 11a to 11e from the multiple first sets, and a second group including one or more first sets 11f to 11j that are different from the one or more first sets 11a to 11e included in the first group, and the multiple second sets 12a to 12d and the multiple third sets 13a to 13d are arranged between the first group and the second group.

[0151] In this way, since the arrangement of the plurality of first sets 11a to 11j can be dispersed, it is possible to suppress bias in the intensity distribution of the first light. Furthermore, in this embodiment, similar to the fourth embodiment, since each of the second sets 12a to 12d and each of the third sets 13a to 13d are alternately arranged in the second direction, it is also possible to suppress bias in the intensity distribution of the second light and the third light.

[0152] Furthermore, similar to the multi-wavelength light source module 10 according to the first embodiment, the multi-wavelength light source module 410 according to the present embodiment also has a uniform polarization direction and can emit high-power light.

[0153] (Embodiment 6) A multi-wavelength light source module according to embodiment 6 will be described. The multi-wavelength light source module according to this embodiment differs from the multi-wavelength light source module 410 according to embodiment 5 mainly in the arrangement of the first sets 11a to 11e. The multi-wavelength light source module according to this embodiment will be described below with reference to FIG. 12, focusing on the differences from the multi-wavelength light source module 410 according to embodiment 4.

[0154] Fig. 12 is a plan view showing the layout of each set and wiring in a multi-wavelength light source module 510 according to this embodiment. Fig. 12 shows a plan view showing the multi-wavelength light source module 510 with its cover removed.

[0155] 12, a multi-wavelength light source module 510 according to this embodiment includes a base 20, a plurality of first sets 11a-11j, and a plurality of second sets 12a-12d. In this embodiment, the multi-wavelength light source module 510 further includes a plurality of third sets 13a-13d, a frame member 30, two first positive electrode current terminals 91p, two first negative electrode current terminals 91n, a second positive electrode current terminal 92p, a second negative electrode current terminal 92n, a third positive electrode current terminal 93p, a third negative electrode current terminal 93n, a first wire W1, a second wire W2, a third wire W3, four first set relay members 81, second set relay members 382a-382c, and third set relay members 383a-383c. Although not shown in FIG. 12, the multi-wavelength light source module 510 further includes a cover having lenses arranged at positions corresponding to each set, similar to the multi-wavelength light source module 10 according to the first embodiment.

[0156] In this embodiment, as in the multi-wavelength light source module 410 according to the fifth embodiment, the plurality of first sets 11a to 11j include a first group including one or more first sets 11a to 11e from among the plurality of first sets, and a second group including one or more first sets 11f to 11j that are different from the one or more first sets 11a to 11e included in the first group, and the plurality of second sets 12a to 12d and the plurality of third sets 13a to 13d are arranged between the first group and the second group.

[0157] In this way, the arrangement of the plurality of first sets 11a to 11j can be dispersed, so that bias in the intensity distribution of the first light can be suppressed.

[0158] Furthermore, in this embodiment, the first semiconductor laser chips 51 of each of the first sets 11a to 11j are arranged in a position closer to the end of the main surface 21 of the base 20 than the first mirror 61 in the first direction. Generally, the heat dissipation characteristics are better when the first semiconductor laser chips 51 are arranged in a position closer to the end of the main surface 21 of the base 20. Therefore, in this embodiment, the heat dissipation characteristics of the first semiconductor laser chips 51 can be improved. This can improve the characteristics of the first semiconductor laser chips 51.

[0159] Furthermore, in the multi-wavelength light source module 510 according to this embodiment, the sets can be arranged symmetrically with respect to a line extending in the second direction, which can further suppress bias in the intensity distribution of the first light, the second light, and the third light.

[0160] Furthermore, similar to the multi-wavelength light source module 10 according to the first embodiment, the multi-wavelength light source module 510 according to the present embodiment also has a uniform polarization direction and can emit high-power light.

[0161] (Embodiment 7) A multi-wavelength light source module according to embodiment 7 will be described. The multi-wavelength light source module according to this embodiment differs from the multi-wavelength light source module 410 according to embodiment 5 mainly in the arrangement of each set. The multi-wavelength light source module according to this embodiment will be described below with reference to FIG. 13, focusing on the differences from the multi-wavelength light source module 410 according to embodiment 4.

[0162] Fig. 13 is a plan view showing the layout of each set and wiring in a multi-wavelength light source module 610 according to this embodiment. Fig. 13 shows a plan view showing the multi-wavelength light source module 610 with its cover removed.

[0163] 13, a multi-wavelength light source module 610 according to this embodiment includes a base 20, a plurality of first sets 11a-11h, and a plurality of second sets 12a-12d. In this embodiment, the multi-wavelength light source module 610 further includes a plurality of third sets 13a-13d, a frame member 30, two first positive electrode current terminals 91p, two first negative electrode current terminals 91n, two second positive electrode current terminals 92p, two second negative electrode current terminals 92n, two third positive electrode current terminals 93p, two third negative electrode current terminals 93n, a first wire W1, a second wire W2, a third wire W3, four first set relay members 81, second set relay members 382a-382f, and third set relay members 383a-383f. Although not shown in FIG. 13, the multi-wavelength light source module 610 further includes a cover having lenses arranged at positions corresponding to each set, similar to the multi-wavelength light source module 10 according to the first embodiment.

[0164] The second set relay members 382d to 382f have the same configuration as the second set relay members 382a to 382c, respectively.

[0165] The third set relay members 383d to 383f have the same configuration as the third set relay members 383a to 383c, respectively.

[0166] The first sets 11a to 11d are electrically connected in series using the first wire W1 and the first set relay member 81, similar to the first sets 11a to 11e according to embodiment 4. The first sets 11e to 11h are also electrically connected in series using the first wire W1 and the first set relay member 81, similar to the first sets 11a to 11e according to embodiment 4.

[0167] The second sets 12a and 12b are electrically connected in series using the second wire W2 and the second set relay members 382a to 382c, similar to the second sets 12b and 12c according to embodiment 4. The second sets 12c and 12d are also electrically connected in series using the second wire W2 and the second set relay members 382d to 382f, similar to the second sets 12b and 12c according to embodiment 4.

[0168] The third sets 13a and 13b are electrically connected in series using the third wire W3 and the third set relay members 383a to 383c, similar to the third sets 13b and 13c according to embodiment 4. The third sets 13c and 13d are also electrically connected in series using the third wire W3 and the third set relay members 383d to 383f, similar to the third sets 13b and 13c according to embodiment 4.

[0169] The multi-wavelength light source module 610 according to this embodiment includes a plurality of units arranged in a matrix on the main surface 21. Each of the plurality of units includes at least one first set among the plurality of first sets 11a-11h, at least one second set among the plurality of second sets 12a-12d, and at least one third set among the plurality of third sets 13a-13d. The areas enclosed by dashed lines in FIG. 13 correspond to the respective units. The multi-wavelength light source module 610 includes a unit including the first sets 11a and 11b, the second set 12a, and the third set 13a; a unit including the first sets 11c and 11d, the second set 12b, and the third set 13b; a unit including the first sets 11e and 11f, the second set 12c, and the third set 13c; and a unit including the first sets 11g and 11h, the second set 12d, and the third set 13d. Thus, the multi-wavelength light source module 610 includes four units arranged in a matrix of two rows and two columns. In this manner, by arranging a plurality of units each emitting the first light, the second light, and the third light in a matrix, it is possible to suppress bias in the intensity distribution of the first light, the second light, and the third light from the multi-wavelength light source module 610.

[0170] Furthermore, in each of the multiple units, the first light may be emitted from the first set in a direction toward the area where the second set and the third set are arranged. For example, as shown in FIG. 13 , the first light may be emitted from the first sets 11a and 11b in a direction toward the area where the second set 12a and the third set 13a are arranged. This allows the first mirror 61 of each of the first sets 11a and 11b to be closer to the second mirror 62 of the second set 12a and the third mirror 63 of the third set 13a. In other words, the first light emitted from the multi-wavelength light source module 610 can be closer to the second light and the third light. This improves the uniformity of the intensity distribution of the light emitted from the multi-wavelength light source module 610.

[0171] Furthermore, the multi-wavelength light source module 610 according to this embodiment, like the multi-wavelength light source module 10 according to the first embodiment, has a uniform polarization direction and can emit high-power light.

[0172] Furthermore, in this embodiment, the arrangement of the sets in the multi-wavelength light source module 610 can also be expressed as follows. The multi-wavelength light source module 610 includes a plurality of first rows and a plurality of second rows. Each of the plurality of first rows includes some of the first sets 11a to 11h, and these some of the first sets are arranged in a row. Specifically, the multi-wavelength light source module 610 includes two first rows. One of the first rows includes the first sets 11a to 11d arranged in the second direction, and the other first row includes the first sets 11e to 11h arranged in the second direction. Each of the plurality of second rows includes some of the second sets 12a to 12d and some of the third sets 13a to 13d. These some of the second sets and these some of the third sets are arranged in a row parallel to the arrangement direction of the plurality of first rows. Specifically, the multi-wavelength light source module 610 includes two second rows. One of the second rows includes second sets 12a and 12b and third sets 13a and 13b arranged in the second direction, and the other first row includes second sets 12c and 12d and third sets 13c and 13d arranged in the second direction. Each of the plurality of first rows and each of the plurality of second rows are alternately arranged in the first direction, which is perpendicular to the arrangement direction of each of the plurality of first rows.

[0173] With this arrangement, it is possible to suppress bias in the intensity distribution of the first light, the second light, and the third light from the multi-wavelength light source module 610.

[0174] (Embodiment 8) A multi-wavelength light source module according to an eighth embodiment will be described. The multi-wavelength light source module according to this embodiment differs from the multi-wavelength light source module 10 according to the first embodiment mainly in the relationship between the arrangement direction of each set and the optical axis direction. The multi-wavelength light source module according to this embodiment will be described below in detail with reference to the multi-wavelength light source module according to the first embodiment. 10 The differences from the previous example will be mainly explained with reference to FIG.

[0175] Fig. 14 is a plan view showing the layout of each set and wiring in a multi-wavelength light source module 710 according to this embodiment. Fig. 14 shows a plan view of the multi-wavelength light source module 710 with the cover removed.

[0176] 14, a multi-wavelength light source module 710 according to the present embodiment includes a base 20, a plurality of first sets 11a-11c, and a plurality of second sets 12a-12c. In the present embodiment, the multi-wavelength light source module 710 further includes a plurality of third sets 13a-13c, a frame member 30, a first positive electrode current terminal 91p, a first negative electrode current terminal 91n, a second positive electrode current terminal 92p, a second negative electrode current terminal 92n, a third positive electrode current terminal 93p, a third negative electrode current terminal 93n, a first wire W1, a second wire W2, a third wire W3, two first set relay members 81, two second set relay members 782, and two third set relay members 783. Although not shown in FIG. 14, the multi-wavelength light source module 710, like the multi-wavelength light source module 10 according to the first embodiment, further includes a cover having lenses disposed at positions corresponding to the respective sets. In FIG. 14, the outlines of the lenses of the cover are shown by dashed lines.

[0177] The second set relay member 782 and the third set relay member 783 according to this embodiment have the same configuration as the first set relay member 81.

[0178] The cover according to this embodiment has three first lenses 741, three second lenses 742, and three third lenses 743.

[0179] The first optical axis of each of the first sets 11a to 11c is parallel to the first direction, similar to the first sets 11a to 11c according to the first embodiment. Note that, as shown in FIG. 14, the first direction is inclined with respect to the horizontal and vertical directions of FIG. 14. The second optical axis of each of the second sets 12a to 12c is parallel to the second direction, similar to the second sets 12a to 12c according to the first embodiment. Note that, as shown in FIG. 14, the second direction is inclined with respect to the horizontal and vertical directions of FIG. 14. The third optical axis of each of the third sets 13a to 13c is parallel to the second direction, similar to the third sets 13a to 13c according to the first embodiment. This allows the multi-wavelength light source module 710 according to this embodiment to emit light with a uniform polarization direction and high power, similar to the multi-wavelength light source module 10 according to the first embodiment.

[0180] In this embodiment, the arrangement direction of the first sets 11a to 11c, the second sets 12a to 12c, and the third sets 13a to 13c is the lateral direction (i.e., horizontal direction) in FIG. 14 and is inclined with respect to the first and second directions. In other words, the arrangement direction of the first sets 11a to 11c is inclined with respect to the first optical axis. The arrangement direction of the second sets 12a to 12c is inclined with respect to the second optical axis. The arrangement direction of the third sets 13a to 13c is inclined with respect to the third optical axis. This makes it possible to reduce the area required for arranging each set. Therefore, the multi-wavelength light source module 710 can be made smaller.

[0181] The second mirror 62 of the second set 12a contacts the second submount 72 of the second set 12b adjacent to the second set 12a in the first direction. The second mirror 62 of the second set 12b contacts the second submount 72 of the second set 12c adjacent to the second set 12b in the first direction.

[0182] Furthermore, the third mirror 63 of the third set 13a contacts in the first direction the third submount 73 of the third set 13b adjacent to the third set 13a. The third mirror 63 of the third set 13b contacts in the first direction the third submount 73 of the third set 13c adjacent to the third set 13b.

[0183] In this embodiment, the second sets 12b and 12c are in contact with the first sets 11a and 11b, respectively, in the first direction. Specifically, the second submount 72 of the second set 12b is in contact with the first mirror 61 of the first set 11a in the first direction. The second submount 72 of the second set 12c is in contact with the first mirror 61 of the first set 11b in the first direction.

[0184] In this embodiment, the second sets 12a and 12b are in contact with the third sets 13b and 13c, respectively, in the first direction. Specifically, the second mirror 62 of the second set 12a is in contact with the third submount 73 of the third set 13b in the first direction. The second mirror 62 of the second set 12b is in contact with the third submount 73 of the third set 13c in the first direction.

[0185] With the above-described layout, the gap between two adjacent sets can be reduced, and the area required for arranging each set can be further reduced.

[0186] 14, for example, second set 12b is in contact with one first set 11a and one third set 13c, but may be in contact with two or more first sets and two or more third sets. That is, at least one second set among the multiple second sets 12a-12c may be in contact with at least one first set among the multiple first sets 11a-11c and at least one third set among the multiple third sets 13a-13c in the first direction. Also, at least one first set among the multiple first sets 11a-11c may be in contact with at least one second set among the multiple second sets 12a-12c and at least one third set among the multiple third sets 13a-13c in the first direction. Also, at least one third set among the multiple third sets 13a-13c may be in contact with at least one first set among the multiple first sets 11a-11c and at least one second set among the multiple second sets 12a-12c in the first direction.

[0187] The configuration of each lens in the lid body may be designed appropriately according to the layout of each set as described above. As shown in Fig. 14, the shape of each of the three first lenses 741 in the lid body according to this embodiment is different from the shape of each of the three second lenses 742 and the shape of each of the three third lenses 743. Furthermore, the shape of each of the three second lenses 742 is different from the shape of each of the three third lenses 743.

[0188] The first sets 11a to 11c are electrically connected in series using one or more first wires W1 and two first-set relay members 81, similar to the first sets 11a to 11e according to the first embodiment. The second sets 12a to 12c are electrically connected in series using one or more second wires W2 and two second-set relay members 782, similar to the first sets 11a to 11c. The third sets 13a to 13c are electrically connected in series using one or more third wires W3 and two third-set relay members 783, similar to the first sets 11a to 11c. Note that while FIG. 14 shows the minimum number of first wires W1, second wires W2, and third wires W3 to avoid cluttering the drawing, the number of each wire may be greater than the example shown in FIG. 14.

[0189] (Embodiment 9) A multi-wavelength light source module according to embodiment 9 will be described. The multi-wavelength light source module according to this embodiment differs from the multi-wavelength light source module 10 according to embodiment 1 mainly in the arrangement direction of each set. The multi-wavelength light source module according to this embodiment will be described below with reference to FIG. 15, focusing on the differences from the multi-wavelength light source module 10 according to embodiment 1.

[0190] Fig. 15 is a plan view showing the layout of each module and wiring in a multi-wavelength light source module 810 according to embodiment 9. Fig. 15 shows a plan view showing a state in which the cover of the multi-wavelength light source module 810 is removed.

[0191] 15, a multi-wavelength light source module 810 according to the present embodiment includes a base 20, a plurality of first sets 11a-11h, and a plurality of second sets 12a-12e. In the present embodiment, the multi-wavelength light source module 810 further includes a plurality of third sets 13a-13e, a frame member 30, two first positive electrode current terminals 91p, two first negative electrode current terminals 91n, a second positive electrode current terminal 92p, a second negative electrode current terminal 92n, a third positive electrode current terminal 93p, a third negative electrode current terminal 93n, a first wire W1, a second wire W2, a third wire W3, two first set relay members 881, two second set relay members 882, and two third set relay members 883. Although not shown in FIG. 15, the multi-wavelength light source module 810, like the multi-wavelength light source module 10 according to the first embodiment, further includes a cover having lenses disposed at positions corresponding to the respective sets.

[0192] Each of the plurality of first sets 11a to 11h according to the present embodiment includes a first semiconductor laser chip 51, a first mirror 61, and a first submount 71, similar to each of the first sets according to the first embodiment.

[0193] Similar to the first embodiment, the first optical axis of the first semiconductor laser chip 51 is parallel to the first direction parallel to the main surface 21. In the present embodiment, the horizontal direction in FIG. 15 is the first direction. In the present embodiment, the plurality of first sets 11a to 11h are arranged in the first direction. More specifically, four first sets 11a to 11d and four first sets 11e to 11h are each arranged in a line in the first direction. That is, the first sets 11a to 11h are arranged in two lines in the first direction.

[0194] Each of the plurality of second sets 12a to 12e according to the present embodiment includes a second semiconductor laser chip 52, a second mirror 62, and a second submount 72, similar to each of the second sets according to the first embodiment.

[0195] Similar to the first embodiment, the second optical axis of the second semiconductor laser chip 52 is parallel to the second direction parallel to the main surface 21. In this embodiment, the up-down direction in FIG. 15 is the second direction. The second direction is perpendicular to the first direction. In this embodiment, the second sets 12a-12e are arranged in the first direction. More specifically, the second sets 12a-12e are arranged in a line in the first direction.

[0196] Each of the plurality of third sets 13a to 13e according to the present embodiment includes a third semiconductor laser chip 53, a third mirror 63, and a third submount 73, similar to each of the third sets according to the first embodiment.

[0197] Similar to the first embodiment, the third optical axis of the third semiconductor laser chip 53 is parallel to the second direction parallel to the main surface 21. In the present embodiment, the third sets 13a to 13e are arranged in the first direction. More specifically, the third sets 13a to 13e are arranged in a line in the first direction.

[0198] The first set relay member 881 is a member disposed adjacent to the plurality of first sets 11a to 11h. In this embodiment, one first set relay member 881 is disposed adjacent to the plurality of first sets 11a to 11d in the second direction, and the other first set relay member 881 is disposed adjacent to the plurality of first sets 11e to 11h in the second direction. The first set relay member 881 includes a plurality of conductive members 81e1 to 81e5. The material of each of the conductive members 81e1 to 81e5 is the same as that of the conductive member 81e. In this embodiment, the first set relay member 881 further includes an insulating member 881d. The insulating member 881d is a member containing an insulating material and is disposed on the main surface 21 of the base 20. The configuration of the insulating member 881d is the same as that of the insulating member 81d. In the present embodiment, insulating member 881d has an elongated shape extending in the first direction. A plurality of conductive members 82e1 to 82e5 are arranged on the upper surface of insulating member 881d in a state where they are electrically insulated from one another.

[0199] The plurality of conductive members 81e1 to 81e5 are arranged in a first direction. One of the two conductive members 81e1 is disposed adjacent to the first positive electrode current terminal 91p and the first set 11a. The other of the two conductive members 81e1 is disposed adjacent to the first positive electrode current terminal 91p and the first set 11e. One of the two conductive members 81e2 is disposed adjacent to the first set 11a and the first set 11b. The other of the two conductive members 81e2 is disposed adjacent to the first set 11e and the first set 11f. One of the two conductive members 81e3 is disposed adjacent to the first set 11b and the first set 11c. The other of the two conductive members 81e3 is disposed adjacent to the first set 11f and the first set 11g. One of the two conductive members 81e4 is disposed adjacent to the first set 11c and the first set 11d. The other of the two conductive members 81e4 is disposed adjacent to the first set 11g and the first set 11h. One of the two conductive members 81e5 is disposed adjacent to the first set 11d and the first negative electrode current terminal 91n. The other of the two conductive members 81e5 is disposed adjacent to the first set 11h and the first negative electrode current terminal 91n.

[0200] The first set relay member 881 may include a plurality of insulating members. For example, the first set relay member 881 may include a plurality of insulating members on which the plurality of conductive members 81e1 to 81e5 are respectively arranged.

[0201] The second set relay member 882 is a member arranged at a position adjacent to the plurality of second sets 12a to 12e. In the present embodiment, the two second set relay members 882 are arranged at a position adjacent to the second sets 12a and 12e, respectively, in the first direction. The second set relay member 882 includes a conductive member 882e. The conductive member 882e has the same configuration as the conductive member 81e. In the present embodiment, the second set relay member 882 further includes an insulating member 882d. The insulating member 882d has the same configuration as the insulating member 81d.

[0202] The third set relay member 883 is a member arranged at a position adjacent to the plurality of third sets 13a to 13e. In the present embodiment, the two third set relay members 883 are arranged at a position adjacent to the third sets 13a and 13e, respectively, in the first direction. The third set relay member 883 includes a conductive member 883e. The conductive member 883e has the same configuration as the conductive member 81e. In the present embodiment, the third set relay member 883 further includes an insulating member 883d. The insulating member 883d has the same configuration as the insulating member 81d.

[0203] The first sets 11a to 11d are electrically connected in series using a plurality of first wires W1 and a first-set relay member 881. An n-side connection electrode (not shown) of the first semiconductor laser chip 51 of the first set 11a is electrically connected to a p-side connection electrode 71e formed on the first submount 71 of the first set 11b using one or more first wires W1 and a conductive member 81e2 of the first-set relay member 881. Specifically, the n-side connection electrode (not shown) of the first semiconductor laser chip 51 of the first set 11a is connected to the conductive member 81e2 by one or more first wires W1. Furthermore, the conductive member 81e2 is connected to the p-side connection electrode 71e of the first set 11b by one or more first wires W1. The p-side connection electrode 71e is electrically connected to a p-side electrode (not shown) of the first semiconductor laser chip 51 mounted on the first submount 71. In this way, the n-side connection electrode of the first semiconductor laser chip 51 in the first set 11a is electrically connected to the p-side electrode of the first semiconductor laser chip 51 in the first set 11b. Similarly, the n-side connection electrode of the first semiconductor laser chip 51 in the first set 11b is electrically connected to the p-side electrode of the first semiconductor laser chip 51 in the first set 11c using the first wire W1 and the conductive member 81e3. The n-side connection electrode of the first semiconductor laser chip 51 in the first set 11c is electrically connected to the p-side electrode of the first semiconductor laser chip 51 in the first set 11d using the first wire W1 and the conductive member 81e4. The multiple first sets 11e to 11h are electrically connected in series using the multiple first wires W1 and the first set relay member 881, just like the multiple first sets 11a to 11d.

[0204] The first positive electrode current terminal 91p and the p-side connection electrode 71e of the first set 11a are electrically connected using a first wire W1 and a first-set relay member 881. Specifically, a portion of the first positive electrode current terminal 91p located within the area surrounded by the frame member 30 is electrically connected to the conductive member 81e1 of the first-set relay member 881 using one or more first wires W1. Furthermore, the conductive member 81e1 and the p-side connection electrode 71e of the first set 11a are electrically connected using one or more first wires W1. Similarly, the first positive electrode current terminal 91p and the p-side connection electrode 71e of the first set 11e are electrically connected using the first wire W1 and the first-set relay member 881.

[0205] The first negative electrode current terminal 91n and the n-side connection electrode of the first semiconductor laser chip 51 of the first set 11d are electrically connected using a first wire W1 and a first set relay member 881. Specifically, a portion of the first negative electrode current terminal 91n located within the area surrounded by the frame member 30 is electrically connected to the conductive member 81e5 of the first set relay member 881 using one or more first wires W1. Furthermore, the conductive member 81e5 and the n-side connection electrode of the first semiconductor laser chip 51 of the first set 11d are electrically connected to one or more first wires W1. Similarly, the first negative electrode current terminal 91n and the n-side connection electrode of the first semiconductor laser chip 51 of the first set 11h are electrically connected to each other using the first wire W1 and the first set relay member 881.

[0206] With the above configuration, current can be supplied from the first positive electrode current terminal 91p and the first negative electrode current terminal 91n to the eight first sets 11a to 11h electrically connected in series.

[0207] The second sets 12a to 12e are electrically connected in series using a plurality of second wires W2. Specifically, one or more second wires W2 connect the n-side connection electrode (not shown) of the second semiconductor laser chip 52 of the second set 12a to the p-side connection electrode 72e formed on the second submount 72 of the adjacent second set 12b. The p-side connection electrode 72e is electrically connected to the p-side electrode (not shown) of the second semiconductor laser chip 52 mounted on the second submount 72. In this manner, the n-side connection electrode of the second semiconductor laser chip 52 of the second set 12a is electrically connected to the p-side electrode of the second semiconductor laser chip 52 of the second set 12b. Similarly, the n-side connection electrodes of the second semiconductor laser chips 52 of the second sets 12b, 12c, and 12d are electrically connected to the p-side connection electrodes 72e of the second submounts 72 of the adjacent second sets 12c, 12d, and 12e, respectively.

[0208] The second positive electrode current terminal 92p and the p-side connection electrode 72e of the second set 12a are electrically connected using a second wire W2 and one second-set relay member 882. The one second-set relay member 882 is disposed adjacent to the second positive electrode current terminal 92p and the second set 12a. A portion of the second positive electrode current terminal 92p located within the area surrounded by the frame member 30 is electrically connected to the conductive member 882e of the second-set relay member 882 using one or more second wires W2. Furthermore, the conductive member 882e of the second-set relay member 882 is electrically connected to the p-side connection electrode 72e of the second set 12a using one or more second wires W2.

[0209] The second negative electrode current terminal 92n and the n-side connection electrode of the second semiconductor laser chip 52 of the second set 12e are electrically connected using one second set relay member 882 and a second wire W2. The one second set relay member 882 is disposed adjacent to the second negative electrode current terminal 92n and the second set 12e. A portion of the second negative electrode current terminal 92n located within the area surrounded by the frame member 30 is electrically connected to the conductive member 882e of the second set relay member 882 using one or more second wires W2. Furthermore, the conductive member 882e of the second set relay member 882 is electrically connected to the n-side connection electrode of the second semiconductor laser chip 52 of the second set 12e using one or more second wires W2.

[0210] With the above configuration, current can be supplied from the second positive electrode current terminal 92p and the second negative electrode current terminal 92n to the five second sets 12a to 12e electrically connected in series.

[0211] The third sets 13a to 13e are electrically connected in series using a plurality of third wires W3. Specifically, one or more third wires W3 connect the n-side connection electrode (not shown) of the third semiconductor laser chip 53 of the third set 13a to the p-side connection electrode 73e formed on the third submount 73 of the adjacent third set 13b. The p-side connection electrode 73e is electrically connected to the p-side electrode (not shown) of the third semiconductor laser chip 53 mounted on the third submount 73. In this manner, the n-side connection electrode of the third semiconductor laser chip 53 of the third set 13a is electrically connected to the p-side electrode of the third semiconductor laser chip 53 of the third set 13b. Similarly, the n-side connection electrodes of the third semiconductor laser chips 53 of the third sets 13b, 13c, and 13d are electrically connected to the p-side connection electrodes 73e of the third submounts 73 of the adjacent third sets 13c, 13d, and 13e, respectively.

[0212] The third positive electrode current terminal 93p and the p-side connection electrode 73e of the third set 13a are electrically connected using a third wire W3 and one third-set relay member 883. The one third-set relay member 883 is disposed adjacent to the third positive electrode current terminal 93p and the third set 13a. A portion of the third positive electrode current terminal 93p located within the area surrounded by the frame member 30 is electrically connected to the conductive member 883e of the third-set relay member 883 using one or more third wires W3. Furthermore, the conductive member 883e of the third-set relay member 883 is electrically connected to the p-side connection electrode 73e of the third set 13a using one or more third wires W3.

[0213] The third negative electrode current terminal 93n and the n-side connection electrode of the third semiconductor laser chip 53 of the third set 13e are electrically connected using one third set relay member 883 and a third wire W3. The one third set relay member 883 is disposed adjacent to the third negative electrode current terminal 93n and the third set 13e. A portion of the third negative electrode current terminal 93n located within the area surrounded by the frame member 30 is electrically connected to the conductive member 883e of the third set relay member 883 using one or more third wires W3. Furthermore, the conductive member 883e of the third set relay member 883 is electrically connected to the n-side connection electrode of the third semiconductor laser chip 53 of the third set 13e using one or more third wires W3.

[0214] With the above configuration, current can be supplied from the third positive electrode current terminal 93p and the third negative electrode current terminal 93n to the five third sets 13a to 13e electrically connected in series.

[0215] The multi-wavelength light source module 810 according to this embodiment also achieves the same effects as the multi-wavelength light source module 10 according to the first embodiment.

[0216] (Variations, etc.) Although the multi-wavelength light source module according to the present disclosure has been described above based on the respective embodiments, the present disclosure is not limited to the above-described respective embodiments.

[0217] For example, in each of the above-described embodiments, each multi-wavelength light source module includes a frame member 30, but the frame member 30 is not an essential component of each light-emitting element. For example, each lid of each multi-wavelength light source module may have a portion corresponding to the frame member. Furthermore, each lid may be supported on the base 20 by a member other than the frame member 30.

[0218] Furthermore, in the above-described embodiments, each set has one independent mirror, but the mirror configuration is not limited to this. For example, the mirrors of adjacent sets may be integrated. Such modifications will be described with reference to FIGS. 16 to 18. FIG. 16 is a plan view showing a state in which the cover of a multi-wavelength light source module 10a according to a modification of the first embodiment has been removed. FIG. 17 is a plan view showing the layout of each module and wiring in a multi-wavelength light source module 110a according to a modification of the second embodiment. FIG. 18 is a plan view showing the layout of each module and wiring in a multi-wavelength light source module 610a according to a modification of the seventh embodiment.

[0219] In a multi-wavelength light source module 10a according to a modification of the first embodiment, as shown in FIG. 16 , the first mirrors 61 included in the first sets adjacent to each other in the second direction among the plurality of first sets 11a to 11j are integrated. In other words, the first mirrors 61 included in the adjacent first sets are integrally formed. In this modification, the first mirrors 61 included in the five first sets 11a to 11e and the first mirrors 61 included in the five first sets 11f to 11j are integrated. Furthermore, the first reflecting surfaces 61a of the integrated first mirrors 61 may be in the same plane. In this modification, the first reflecting surfaces 61a of the first mirrors 61 included in the five first sets 11a to 11e and the first reflecting surfaces 61a of the first mirrors 61 included in the five first sets 11f to 11j are in the same plane.

[0220] 16, the second mirror 62 included in one of the second sets 12a to 12d may be integrated with the third mirror 63 included in one of the third sets 13a to 13d that is adjacent to the second mirror 62 in the first direction. In this modification, the second mirror 62 of the second sets 12a to 12d and the third mirror 63 of the third sets 13a to 13d are integrated with each other. In this case, as shown in FIG. 16, the second set relay member 82 may be disposed between the first sets 11a to 11j and the second sets 12a to 12d in order to suppress interference between the second mirror 62 and the third mirror, as in the first embodiment.

[0221] Furthermore, the second reflecting surface 62a of the integrated second mirror 62 and the third reflecting surface 63a of the third mirror 63 may be in the same plane. In this modification, the first reflecting surfaces 61a of the first mirrors 61 of the five first sets 11a to 11e and the first reflecting surfaces 61a of the first mirrors 61 of the five first sets 11f to 11j are in the same plane.

[0222] 17, in a multi-wavelength light source module 110a according to a modification of the second embodiment, the first mirrors 61 of the four first sets 11a to 11d adjacent to each other in the second direction and the first mirrors 61 of the four first sets 11e to 11h adjacent to each other in the second direction are integrated together. In this modification, the first reflecting surfaces 61a of the first mirrors 61 of the four first sets 11a to 11d and the first reflecting surfaces 61a of the first mirrors 61 of the four first sets 11e to 11h are in the same plane.

[0223] 17, the second mirrors 62 of the four second sets 12a to 12d adjacent to each other in the first direction and the third mirrors 63 of the four third sets 13a to 13d adjacent to each other in the first direction are integrated together. In this modification, the second reflecting surfaces 62a of the second mirrors 62 of the four second sets 12a to 12d and the third reflecting surfaces 63a of the third mirrors 63 of the four third sets 13a to 13d are in the same plane.

[0224] 18, in a multi-wavelength light source module 610a according to a modification of the seventh embodiment, the first mirrors 61 of two first sets 11a and 11b, the first mirrors 61 of two first sets 11c and 11d, the first mirrors 61 of two first sets 11e and 11f, and the first mirrors 61 of two first sets 11g and 11h that are adjacent in the second direction are integrated together. In this modification, the first reflecting surfaces 61a of the first mirrors 61 of the two first sets 11a and 11b, the first reflecting surfaces 61a of the first mirrors 61 of the two first sets 11c and 11d, the first reflecting surfaces 61a of the first mirrors 61 of the two first sets 11e and 11f, and the first reflecting surfaces 61a of the first mirrors 61 of the two first sets 11g and 11h are all in the same plane.

[0225] 18, the second mirror 62 of the second set 12a and the third mirror 63 of the third set 13a adjacent to each other in the second direction are integrated, the second mirror 62 of the second set 12b and the third mirror 63 of the third set 13b are integrated, the second mirror 62 of the second set 12c and the third mirror 63 of the third set 13c are integrated, and the second mirror 62 of the second set 12d and the third mirror 63 of the third set 13d are integrated. In this modification, the second reflecting surface 62a of the integrated second mirror 62 and the third reflecting surface 63a of the third mirror 63 are in different planes.

[0226] Furthermore, in other embodiments, multiple mirrors may be integrated. For example, in the multi-wavelength light source module 310 according to the fourth embodiment, the first mirrors 61 of the first sets 11a to 11e and the first mirrors 61 of the first sets 11f to 11j may be integrated. Furthermore, the second mirrors 62 of the second sets 12a and 12b, the second mirrors 62 of the second sets 12c and 12d, the third mirrors 63 of the third sets 13a and 13b, and the third mirrors 63 of the third sets 13c and 13d may be integrated.

[0227] The multi-wavelength light source modules according to the above-described respective modifications also achieve the same effects as the multi-wavelength light source modules according to the above-described respective embodiments. Furthermore, in the above-described respective modifications, it is possible to suppress variations in mounting position that occur when mounting each mirror on the main surface 21 of the base 20. Furthermore, each submount of the multi-wavelength light source modules according to the above-described respective embodiments is not an essential component. Each semiconductor laser chip may be mounted directly on the base 20. In this way, each semiconductor laser chip may be mounted directly on the main surface 21 of the base 20 or via a submount.

[0228] In addition, in each of the above embodiments, the first sets each have the same configuration, but they may have different configurations. The second sets each may have different configurations. The third sets each may have different configurations.

[0229] Furthermore, in each of the above embodiments, each of the first semiconductor laser chips in the arranged first sets emits the first light in the same direction, but the arranged first sets may also include a first semiconductor laser chip that emits the first light in the opposite direction to the same direction.

[0230] Furthermore, in each of the above-described embodiments, the conductive member of each relay member is disposed on the main surface 21 via an insulating member, but if the main surface 21 is formed of an insulating member, the conductive member may be disposed directly on the main surface 21. In this case, each relay member does not need to include an insulating member.

[0231] This disclosure also includes forms obtained by applying various modifications to the above-mentioned embodiments that a person skilled in the art would conceive, and forms realized by arbitrarily combining the components and functions of the above-mentioned embodiments within the scope of the present disclosure.

[0232] For example, the layout of the plurality of first sets 11a to 11j according to embodiment 5 or embodiment 6 may be combined with the layout of the plurality of second sets 12a to 12d and the plurality of third sets 13a to 13d according to embodiment 1.

[0233] Furthermore, in each of the above embodiments, the multi-wavelength light source module includes multiple first sets, multiple second sets, and multiple third sets. However, the multi-wavelength light source module does not necessarily have to include multiple third sets. That is, the multi-wavelength light source module may include only multiple first sets and multiple second sets among multiple first sets, multiple second sets, and multiple third sets. In this case, for example, each of the multiple first sets may have a first semiconductor laser chip made of a GaInP-based semiconductor laser chip that emits a red laser in TM mode, and each of the second sets may have a second semiconductor laser chip made of a GaInN-based semiconductor laser chip that emits a blue laser in TE mode. Alternatively, the multi-wavelength light source module may include multiple first sets, multiple second sets, and only one third set. In this case, for example, each of the plurality of first sets may have a first semiconductor laser chip made of a GaInP-based semiconductor laser chip that emits a red laser in TM mode, each of the plurality of second sets may have a second semiconductor laser chip made of a GaInN-based semiconductor laser chip that emits a green laser in TE mode, and the third set may have a third semiconductor laser chip made of a GaInN-based semiconductor laser chip that emits a blue laser in TE mode. [Industrial Applicability]

[0234] The multi-wavelength light source module of the present disclosure can be applied to, for example, a time-resolved projector equipped with a single liquid crystal display. [Explanation of symbols]

[0235] 10, 10a, 110, 110a, 210, 310, 410, 510, 610, 610a, 710, 810 Multi-wavelength light source module 11a, 11b, 11c, 11d, 11e, 11f, 11g, 11h, 11i, 11j First set 12a, 12b, 12c, 12d second set 13a, 13b, 13c, 13d Third set 20 Foundation 21 Main surface 30 Frame members 40 Lid 41, 741 First lens 42, 742 Second lens 43,743 Third lens 44 Lens area 51 First semiconductor laser chip 52 Second semiconductor laser chip 53 Third Semiconductor Laser Chip 61 First Mirror 61a First reflective surface 62 Second Mirror 62a Second reflective surface 63 Third Mirror 63a Third reflective surface 71 First submount 71e, 72e, 73e p-side connection electrode 72 Second submount 73 Third submount 81, 881 First set relay member 81d, 82d, 83d, 182d1, 182d2, 183d1, 183d2, 183d3, 183d4, 382d1, 382d2, 382d3, 383d1, 383d2, 383d3, 881d, 882d, 883d Insulating members 81e, 81e1, 81e2, 81e3, 81e4, 81e5, 82e1, 82e2, 82e3, 82e4, 82e5, 83e1, 83e2, 83e3, 83e4, 83e5, 182e1, 182e2, 183e1, 183e2, 183e3, 183e4, 382e1, 382e2, 382e3, 383e1, 383e2, 383e3, 882e, 883e Conductive material 82, 182a, 182b, 382a, 382b, 382c, 382d, 382e, 382f, 782 Second set relay members 83, 183a, 183b, 183c, 183d, 383a, 383b, 383c, 383d, 383e, 383f, 783 Third set relay member 91p First positive current terminal 91n First negative current terminal 92p Second positive current terminal 92n Second negative current terminal 93p Third positive current terminal 93n Third negative current terminal Af Fast axis As slow axis L11 First light L12 First reflected light L13 First output light L21 Second light L22 Second reflected light W1 First wire W2 Second Wire W3 Third Wire

Claims

1. a base having a main surface; a plurality of first sets and a plurality of second sets disposed on the major surface; Each of the plurality of first sets comprises: a first semiconductor laser chip having a first optical axis parallel to the principal surface and emitting first light in a first wavelength band; a first mirror that reflects the first light in a direction perpendicular to the main surface, Each of the plurality of second sets comprises: a second semiconductor laser chip having a second optical axis parallel to the principal surface and emitting second light in a second wavelength band different from the first wavelength band; a second mirror that reflects the second light in a direction perpendicular to the main surface, the first optical axis is parallel to a first direction parallel to the principal surface, the second optical axis is parallel to a second direction parallel to the principal surface, the second direction is perpendicular to the first direction, a polarization direction of the first light propagating from the first semiconductor laser chip to the first mirror and a polarization direction of the second light propagating from the second semiconductor laser chip to the second mirror are orthogonal to each other; the first semiconductor laser chips of the first sets are arranged in one or more rows in the second direction; the first mirrors of the first sets are arranged in one or more rows in the second direction; In each of the plurality of first sets, the first mirror is disposed in the first direction relative to the first semiconductor laser chip; the first semiconductor laser chips of the first sets arranged in a line in the second direction are electrically connected in series; the second semiconductor laser chips of the second sets are arranged in one or more rows in the second direction; The second mirrors of the second sets are arranged in one or more rows in the second direction. It is In each of the plurality of second sets, the second mirror is disposed in the second direction relative to the second semiconductor laser chip, the second semiconductor laser chips of the second sets arranged in a line in the second direction are electrically connected in series; at least one of the second mirrors is disposed between two adjacent second semiconductor laser chips, the second mirrors reflecting the first light from each of the two second semiconductor laser chips; The two adjacent second semiconductor laser chips are electrically connected in series. Multi-wavelength light source module.

2. Two adjacent second semiconductor laser chips are electrically connected in series via a conductive member disposed between the two second semiconductor laser chips, bypassing the second mirror.

2. The multi-wavelength light source module according to claim 1.

3. a plurality of third sets disposed on the major surface; Each of the plurality of third sets comprises: a third semiconductor laser chip having a third optical axis parallel to the second direction and emitting third light in a third wavelength band different from the first wavelength band and the second wavelength band; a third mirror that reflects the third light in a direction perpendicular to the main surface, In each of the plurality of third sets, the third mirror is disposed in the second direction relative to the third semiconductor laser chip, The polarization direction of the first light propagating from the first semiconductor laser chip to the first mirror and the polarization direction of the third light propagating from the third semiconductor laser chip to the third mirror are orthogonal to each other.

3. The multi-wavelength light source module according to claim 1.

4. the third semiconductor laser chips of the third sets are arranged in one or more rows in the second direction; The third mirrors of the third sets are arranged in one or more rows in the second direction.

4. The multi-wavelength light source module according to claim 3.

5. the second semiconductor laser chips in the second sets and the third semiconductor laser chips in the third sets are alternately arranged in the second direction, The second mirrors of the second sets and the third mirrors of the third sets are alternately arranged in the second direction.

5. The multi-wavelength light source module according to claim 4.

6. a plurality of first rows and a plurality of second rows; each of the plurality of first rows includes a portion of the plurality of first sets; all of the first semiconductor laser chips included in the first set are arranged in a line in the second direction; all of the first mirrors included in the partial first set are arranged in a line in the second direction; each of the plurality of second rows includes a second set that is a part of the plurality of second sets and a third set that is a part of the plurality of third sets; All of the second semiconductor laser chips included in the second set of the part, and all of the third semiconductor laser chips included in the third set are arranged in a line parallel to the arrangement direction of each of the plurality of first rows; The first rows and the second rows are alternately arranged in a direction perpendicular to the arrangement direction of the first rows.

6. The multi-wavelength light source module according to claim 5.

7. a second set relay member disposed on the main surface, each of the plurality of second sets has a p-side connection electrode and an n-side connection electrode for supplying power to the second semiconductor laser chip; the plurality of second sets include two second sets adjacent to each other in the second direction, the second set relay member is disposed adjacent to the two second semiconductor laser chips included in the two second sets in the first direction, the n-side connecting electrode of one of the two second sets is disposed between the p-side connecting electrode of the one second set and the second-set relay member, and is electrically connected to the second-set relay member; The p-side connection electrode of the other of the two second sets is disposed between the n-side connection electrode of the other second set and the second-set relay member, and is electrically connected to the second-set relay member.

6. The multi-wavelength light source module according to claim 5.

8. a third set relay member disposed on the main surface at a position adjacent to two of the third semiconductor laser chips included in the plurality of third sets in the first direction, the plurality of second sets are electrically connected in series using the plurality of second wires and the second set relay members, the third sets are electrically connected in series using the third wires and the third set relay members, The second set relay member is disposed between at least one third wire among the plurality of third wires and the main surface, and has a height from the main surface that is lower than that of the third set relay member.

8. The multi-wavelength light source module according to claim 7.

9. the plurality of first sets include a first group including two or more first sets among the plurality of first sets, and a second group including two or more first sets different from the two or more first sets included in the first group, The two or more first semiconductor laser chips included in the first group are arranged in a line in the second direction, the two or more first semiconductor laser chips included in the second group are arranged in a line in the second direction, the two or more first semiconductor laser chips included in the second group are arranged in the first direction with respect to the two or more first semiconductor laser chips included in the first group; The second semiconductor laser chips and the second mirrors of the second sets and the third semiconductor laser chips and the third mirrors of the third sets are disposed between two or more of the first semiconductor laser chips included in the first group and two or more of the first semiconductor laser chips included in the second group.

4. The multi-wavelength light source module according to claim 3.

10. In the first direction, the first semiconductor laser chips in each of the plurality of first sets are disposed at positions closer to an end of the main surface than the first mirror. The multi-wavelength light source module according to claim 9 .

11. the second semiconductor laser chips in the second sets and the third semiconductor laser chips in the third sets are alternately arranged in the second direction, The second mirrors of the second sets and the third mirrors of the third sets are alternately arranged in the second direction.

11. The multi-wavelength light source module according to claim 3, 9, or 10.

12. The two second semiconductor laser chips included in at least two of the plurality of second sets are arranged in the first direction. The multi-wavelength light source module according to claim 11 .

13. the multi-wavelength light source module includes a plurality of units arranged on the main surface; Each of the plurality of units includes at least one first set among the plurality of first sets, at least one second set among the plurality of second sets, and at least one third set among the plurality of third sets, which are arranged on a unit area that is one area of ​​a portion of the main surface, the plurality of unit regions are arranged in a matrix, a row direction of the matrix is ​​parallel to the first direction, The column direction of the matrix is ​​parallel to the second direction.

4. The multi-wavelength light source module according to claim 3.

14. In each of the plurality of units, the first light is emitted from each of the at least one first set in a direction toward an area where the at least one second set and the at least one third set are arranged. The multi-wavelength light source module according to claim 13 .

15. a second set relay member disposed on the main surface at a position adjacent to at least one of the second semiconductor laser chip and the second mirror of one second set among the plurality of second sets in the first direction, the second set relay member includes a conductive member, The plurality of second sets are electrically connected in series using the plurality of second wires and the second set relay members. The multi-wavelength light source module according to any one of claims 1 to 6 and 9 to 13.

16. The second set relay member is disposed between the first mirror and the second mirror. The multi-wavelength light source module according to claim 15.

17. The relay member for the second set is disposed at a position adjacent to the second mirror of the one second set in the first direction.

17. The multi-wavelength light source module according to claim 15 or 16.

18. Further comprising a plurality of first lenses and a plurality of second lenses, the first light reflected by the first mirror is incident on each of the plurality of first lenses, the second light reflected by the second mirror is incident on each of the plurality of second lenses, a width of each of the plurality of first lenses in the second direction being smaller than a width of each of the plurality of first lenses in the first direction; The width of each of the plurality of second lenses in the first direction is smaller than the width of each of the plurality of second lenses in the second direction. The multi-wavelength light source module according to any one of claims 1 to 17.

19. further comprising a plurality of first lenses, a plurality of second lenses, and a plurality of third lenses; the plurality of first lenses, the plurality of second lenses, and the plurality of third lenses are arranged on a plane parallel to a major surface of a substrate, the first light reflected by the first mirror is incident on each of the plurality of first lenses, the second light reflected by the second mirror is incident on each of the plurality of second lenses, the third light reflected by the third mirror is incident on each of the plurality of third lenses, a width of each of the plurality of first lenses in the second direction being smaller than a width of each of the plurality of first lenses in the first direction; a width of each of the plurality of second lenses in the first direction is smaller than a width of each of the plurality of second lenses in the second direction; The width of each of the third lenses in the first direction is smaller than the width of each of the third lenses in the second direction. The multi-wavelength light source module according to any one of claims 3 to 14.

20. The area in which the plurality of first lenses, the plurality of second lenses, and the plurality of third lenses are arranged has a rectangular shape.

20. The multi-wavelength light source module according to claim 19.

21. The number of the first lenses arranged in a row in the second direction among the plurality of first lenses is: The number of the second lenses is different from the number of the second lenses arranged in a line in the second direction. The multi-wavelength light source module according to any one of claims 18 to 20.

22. a base having a main surface; a plurality of first sets and a plurality of second sets disposed on the major surface; Each of the plurality of first sets comprises: a first semiconductor laser chip having a first optical axis parallel to the principal surface and emitting first light in a first wavelength band; a first mirror that reflects the first light in a direction perpendicular to the main surface, Each of the plurality of second sets comprises: a second semiconductor laser chip having a second optical axis parallel to the principal surface and emitting second light in a second wavelength band different from the first wavelength band; a second mirror that reflects the second light in a direction perpendicular to the main surface, the first optical axis is parallel to a first direction parallel to the principal surface, the second optical axis is parallel to a second direction parallel to the principal surface, the second direction is perpendicular to the first direction, a polarization direction of the first light propagating from the first semiconductor laser chip to the first mirror and a polarization direction of the second light propagating from the second semiconductor laser chip to the second mirror are orthogonal to each other; the first sets of the first semiconductor laser chips are arranged in one or more rows; an arrangement direction of the plurality of first semiconductor laser chips is inclined with respect to the first direction and the second direction, the second semiconductor laser chips of the second sets are arranged in one or more rows; the arrangement direction of the plurality of second semiconductor laser chips is the same as the arrangement direction of the plurality of first semiconductor laser chips, In each of the plurality of first sets, the first mirror is and In each of the plurality of second sets, the second mirror is disposed in the second direction relative to the second semiconductor laser chip, the first semiconductor laser chips of the first sets arranged in a row are electrically connected in series; The second semiconductor laser chips of the second sets arranged in a row are electrically connected in series. Multi-wavelength light source module.

23. each of the plurality of first sets includes a first submount disposed on the principal surface and on which the first semiconductor laser chip is disposed; each of the plurality of second sets includes a second submount disposed on the principal surface and on which the second semiconductor laser chip is disposed; The second mirror included in at least one of the second sets is in contact with the second submount included in another adjacent second set in the first direction.

23. The multi-wavelength light source module according to claim 22.

24. each of the plurality of second sets includes a second submount disposed on the principal surface and on which the second semiconductor laser chip is disposed; The second submount of at least one second set of the plurality of second sets contacts the first mirror of at least one first set of the plurality of first sets in the first direction.

23. The multi-wavelength light source module according to claim 22.

25. Further comprising a plurality of first lenses and a plurality of second lenses, the plurality of first lenses and the plurality of second lenses are arranged on a plane parallel to the main surface, the first light reflected by the first mirror is incident on each of the plurality of first lenses, the second light reflected by the second mirror is incident on each of the plurality of second lenses, The shape of each of the plurality of first lenses is different from the shape of each of the plurality of second lenses. The multi-wavelength light source module according to any one of claims 22 to 24.

26. Further comprising a plurality of first lenses and a plurality of second lenses, the first light reflected by the first mirror is incident on each of the plurality of first lenses, the second light reflected by the second mirror is incident on each of the plurality of second lenses, a width of each of the plurality of first lenses in the second direction being smaller than a width of each of the plurality of first lenses in the first direction; The width of each of the plurality of second lenses in the first direction is smaller than the width of each of the plurality of second lenses in the second direction. The multi-wavelength light source module according to any one of claims 22 to 24.

27. a frame member disposed on the main surface; a cover body disposed on the frame member, The first sets and the second sets are arranged in a space surrounded by the base, the frame member, and the lid. The multi-wavelength light source module according to any one of claims 1 to 16 and 22 to 24.

28. The cover has a plurality of first lenses and a plurality of second lenses.

28. The multi-wavelength light source module according to claim 27.

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