Method for manufacturing a heat dissipation substrate for semiconductors with integrated heat dissipation device

Abstract

To provide a heat dissipation device-integrated heat dissipation substrate for a semiconductor.SOLUTION: A manufacturing method of the present invention, includes: a base processing step of preparing first and second base original plates each in a form of metal plates that overlap each other and constitute a part of a metal base, and providing first and second bases in which a three-dimensional structure forming a coolant circulation space is formed on an inner surface of at least one of the first base plate and the second base plate; a base coupling step of coupling opposing inner surfaces of the first and second bases against each other to form heat dissipation device-integrated base including the coolant circulation space, an electrode metal original plate preparation step of processing an electrode metal original plate to form a groove pattern corresponding to a pattern space, and providing an electrode metal original plate capable of covering an area corresponding to at least one circuit unit, so as to not allow any open part to be generated by a residual part remained at the time of forming the pattern groove; and an electrode metal plate original plate bonding step of bonding, via insulating resin, the electrode metal plate to an upper surface of the heat dissipation device-integrated base formed in the base coupling step.SELECTED DRAWING: Figure 6

Description

[Technical Field]

[0001] The present invention relates to a method for manufacturing a heat dissipation substrate for mounting semiconductor elements, which functions as a circuit board for mounting semiconductor elements, and more particularly, to a method for efficiently manufacturing a heat dissipation substrate having a thick metal electrode plate suitable for mounting high-power semiconductor elements or high-output LEDs, and a heat dissipation device integrated on the back surface of the metal electrode plate. [Background technology]

[0002] Recently, the power industry has been actively researching and developing new renewable energy facilities such as solar and wind power generation, as well as improving the efficiency of devices that run on electricity, such as electric vehicles and robots. The core components used in these applications are power modules, or power semiconductor modules, that utilize power devices. In the lighting field, research and development is also underway to improve the efficiency and lifespan of LED light sources that require high output, such as for automobile headlights, streetlights, and plant growth in smart farms.

[0003] These power devices handle high power, with currents ranging from tens to hundreds of amperes and voltages ranging from tens to thousands of volts, resulting in a large amount of heat being generated from the device modules. This heat can easily cause device malfunctions and reliability issues. To prevent such defects or reduced efficiency, the key is how to quickly dissipate the heat generated by the semiconductor elements. In the case of high-power LED light source modules, heat dissipation is a crucial factor that directly affects the lifespan and efficiency of the device. Heat dissipation is also a very important factor in computing devices for artificial intelligence or cloud computing.

[0004] In general, printed circuit boards have electrode patterns formed on an electrode layer made of copper foil by etching or plating processes, but if the copper foil is thin, the electrical resistance is high and it is not suitable for the high-power semiconductor devices mentioned above, and if the copper foil is thick, the etching or plating process reaches its limits. To solve the technical problem of ensuring a sufficiently thick electrode pattern, the applicant has proposed a structure and a manufacturing method in Korean Patent Registration Nos. 10-2055587, 10-2283906, and 10-2120785 that can improve the performance, durability, and productivity of semiconductor heat dissipation substrates and reduce the emission of pollutants by machining all or part of the thickness of the electrode metal layer.

[0005] Meanwhile, in order to achieve sufficient heat dissipation from a printed circuit board for a high-power semiconductor device, it is often necessary to separately install a heat dissipation device such as a heat sink, water jacket, heat pipe, or heat exchanger. The problems with installing these heat dissipation devices on the printed circuit board are that the thermal resistance of the bonding surface for attaching these heat dissipation devices to the printed circuit board is high, and that the process of attaching the heat dissipation device to the printed circuit board can cause circuit defects. For example, when brazing the back surface of the printed circuit board to the water jacket, the process temperature can reach approximately 600°C, which can damage the synthetic resin insulating layer that makes up the printed circuit board and can cause electrode misalignment. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Korean Patent Registration No. 10-2055587 [Patent Document 2] Korean Patent Registration No. 10-2120785 [Patent Document 3] Korean Patent Registration No. 10-2283906 Summary of the Invention [Problem to be solved by the invention]

[0007] The present invention provides a heat dissipation substrate for semiconductors for mounting high-power semiconductor devices, which is an integrated heat dissipation substrate for semiconductors in which a heat dissipation device such as a water jacket, a refrigerant circulation type heat exchanger, or a heat pipe is integrated on the back side of a printed circuit board, and an efficient method for manufacturing the same. Another object of the present invention is to provide a method for manufacturing a heat dissipation substrate for semiconductors in which a heat dissipation device is integrated without damaging a circuit board having a synthetic resin insulating layer. [Means for solving the problem]

[0008] In order to solve the above-mentioned problems, a method for manufacturing a heat dissipation substrate for a semiconductor integrated with a heat sink according to the present invention is for mounting a semiconductor element, and includes a metal base integrally provided with a plurality of electrodes separated from each other and electrically insulated by pattern spaces, a coolant flow space for absorbing and releasing heat transferred from the plurality of electrodes, and an insulating layer formed of an insulating resin and joining the plurality of electrodes to the metal base, the method comprising the steps of: preparing a first base original plate and a second base original plate in the form of metal plates that are stacked on each other to form at least a part of the metal base; and providing a first base and a second base on at least one inner surface of the first base original plate and the second base original plate, the first base and the second base having a three-dimensional structure that forms the coolant flow space. a base processing step, a base joining step of butting together the opposing inner surfaces of the first base and the second base to form a heat dissipation device-integrated base including the refrigerant flow space, an electrode metal original plate preparation step of processing an electrode metal original plate of a metal plate material that will form the multiple electrodes to form pattern grooves corresponding to the pattern spaces and to provide an electrode metal original plate that can cover an area corresponding to at least one circuit unit with a residual portion left behind when the pattern grooves are formed so that no openings are formed, and an electrode metal original plate joining step of joining the electrode metal original plate to the upper surface of the heat dissipation device-integrated base formed by the base joining step via an insulating resin.

[0009] The base joining step may be configured to join the first base and the second base by a brazing process.

[0010] The electrode metal plate joining step may be configured to form an insulating layer between the first surface of the electrode metal plate on which the pattern groove is formed and the upper surface of the heat dissipation device integrated base, and join the electrode metal plate so that the pattern groove is filled with an insulator.

[0011] In the electrode metal plate joining step, the insulating layer may be formed using a semi-cured insulating resin sheet.

[0012] After the electrode metal plate bonding step, an electrode forming step of removing the remaining portion from the upper surface of the electrode metal plate to separate the plurality of electrodes from each other may be included.

[0013] The base processing step and the base joining step may be configured to integrally form a heat dissipation device unit selected from a group including a water jacket, a heat exchanger, and a heat pipe, including the refrigerant flow space formed between two opposing inner surfaces of the first and second bases, by processing the first and second bases and joining the first and second bases.

[0014] The base processing step can process the first and second bases so that a plurality of the heat dissipation device units are arranged in a plane within one heat dissipation device-integrated base.

[0015] The method may further include a cutting step of preparing a base plate for a semiconductor heat dissipation substrate by arranging a plurality of circuit units, each of which constitutes one circuit using the plurality of electrodes and the pattern space, on the top of the heat dissipation device-integrated base in correspondence with the plurality of heat dissipation device units, and cutting the base plate for a semiconductor heat dissipation substrate to provide a plurality of heat dissipation device-integrated semiconductor heat dissipation substrate units.

[0016] On the other hand, the base processing step may be configured to process the first and second bases so that one heat dissipation device unit is configured within one heat dissipation device-integrated base, and the electrode metal original plate preparation step and the electrode metal original plate joining step may be configured to provide multiple electrode metal original plates, each having a pattern groove corresponding to one circuit unit, and join the multiple electrode metal original plates to the upper surface of the one heat dissipation device-integrated base.

[0017] A method for manufacturing a heat dissipation substrate for a semiconductor integrated with a heat sink according to one aspect of the present invention is for mounting a semiconductor element, and includes a plurality of electrodes separated from each other by pattern spaces and electrically insulated, a metal base integrally provided with a coolant flow space for absorbing and releasing heat transferred from the plurality of electrodes, and an insulating layer formed of an insulating resin and joining the plurality of electrodes to the metal base, the method comprising the steps of: preparing a first base original plate and a second base original plate in the form of metal plates that are stacked on top of each other to form at least a part of the metal base; The method may include a base processing step of providing a first base and a second base, each having a three-dimensional structure that forms the refrigerant flow space formed on at least one inner surface thereof; a base joining step of butting together the opposing inner surfaces of the first base and the second base to form a heat dissipation device-integrated base including the refrigerant flow space; an electrode metal plate joining step of joining the flat electrode metal plate to the upper surface of the heat dissipation device-integrated base via an insulating resin; and an electrode forming step of forming the plurality of electrodes by deleting a pattern corresponding to the pattern space from the electrode metal plate.

[0018] The base processing step forms a plurality of cooling fins protruding from the bottom surface of the first base, and the base joining step can join the end portions of the plurality of cooling fins to the bottom surface of the three-dimensional structure forming the refrigerant flow space of the second base so that they are fixed and supported in at least a horizontal direction parallel to the plane to which the base belongs.

[0019] The base processing step may form a plurality of fin grooves in the bottom surface of the second base to accommodate the end portions of the plurality of cooling fins, and the base joining step may join the first and second bases with the end portions of the plurality of cooling fins inserted into the plurality of fin grooves.

[0020] The base joining step may involve brazing inner surfaces of the first and second bases together, and brazing ends of the cooling fins to the bottom surface.

[0021] A heat dissipation device for semiconductors integrated with a heat sink according to one embodiment of the present invention includes a first base having a flat upper surface on which an electrode pattern constituting a predetermined circuit is bonded via an insulating layer; a second base arranged below the first base and bonded opposite the bottom surface of the first base, forming a three-dimensional structure that forms a refrigerant flow space between the second base and the bottom surface; and a plurality of cooling fins protruding from the bottom surface of the first base toward the refrigerant flow space, wherein the terminal ends of the plurality of cooling fins are fixedly supported on the bottom surface of the three-dimensional structure inside the second base.

[0022] The second base further includes a plurality of fin grooves on the bottom surface that accommodate the end portions of the plurality of cooling fins, and the first base and the second base can be coupled to each other with the end portions of the plurality of cooling fins inserted into the plurality of fin grooves. [Effects of the Invention]

[0023] According to the present invention, there is provided a method for efficiently manufacturing a heat dissipation substrate for semiconductors integrated with a heat dissipation device, which is a heat dissipation substrate for semiconductors for mounting high-power semiconductor devices, in which a heat dissipation device such as a water jacket, a refrigerant circulation type heat exchanger, or a heat pipe is integrated on the back side of a printed circuit board. According to the present invention, a heat dissipation substrate for semiconductors integrated with a heat dissipation device can be manufactured without damaging a circuit board having a synthetic resin insulating layer. Furthermore, the manufacturing method according to the present invention is applicable to mass production as well as small-lot production of a wide variety of products. [Brief explanation of the drawings]

[0024] [Figure 1] 1 illustrates a preparation state of first and second base master plates during a manufacturing process according to an embodiment of the present invention. [Figure 2] 10A and 10B illustrate a processing state of a first base during a manufacturing process according to an embodiment of the present invention. [Figure 3] 10A and 10B illustrate a second base being processed during a manufacturing process according to an embodiment of the present invention. [Figure 4] 4 shows a heat dissipation device integrated base in which the first base of FIG. 2 and the second base of FIG. 3 are joined together. [Figure 5] 4A and 4B illustrate a state in which a first surface of an electrode metal plate is processed during a manufacturing process according to an embodiment of the present invention. [Figure 6] 6 shows a state in which the electrode metal plate of FIG. 5 is bonded onto the heat dissipation device integrated base of FIG. 4. [Figure 7] 1 shows a state before cutting of an original plate of a heat dissipation substrate for a semiconductor according to an embodiment of the present invention. [Figure 8] 10A-10C illustrate processing of the first and second bases during a manufacturing process according to one embodiment of the present invention. [Figure 9] 9 shows a state before cutting of an original plate of a heat dissipation substrate for a semiconductor to which the first and second bases of FIG. 8 are applied. [Figure 10] 1A and 1B illustrate a manufacturing process of a heat dissipation device-integrated base in a manufacturing process of a heat dissipation substrate for semiconductors integrated with a heat dissipation device according to an embodiment of the present invention. [Figure 11] 4 illustrates an assembled state of the heat dissipation device-integrated base during a manufacturing process of the heat dissipation substrate for semiconductors integrated with a heat dissipation device according to an embodiment of the present invention. [Figure 12] 1 illustrates a step of preparing an electrode metal substrate in a manufacturing process of a heat dissipation substrate for a semiconductor integrated with a heat dissipation device according to an embodiment of the present invention. [Figure 13] 10 illustrates a step of bonding an electrode metal plate and a heat dissipation device-integrated base in a manufacturing process of a heat dissipation substrate for semiconductors integrated with a heat dissipation device according to an embodiment of the present invention. [Figure 14]1 shows a cross section of a heat dissipation substrate for a semiconductor integrated with a heat dissipation device according to an embodiment of the present invention. [Figure 15] 15 is an exploded perspective view of the base of the heat dissipation board for a semiconductor integrated with a heat dissipation device according to the embodiment of FIG. 14. FIG. [Figure 16] FIG. 15 is a perspective view of the heat dissipation board for a semiconductor integrated with a heat dissipation device according to the embodiment of FIG. [Figure 17] 10 shows a cross section of a heat dissipation substrate for a semiconductor integrated with a heat dissipation device according to another embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0025] Various embodiments of the present invention will be described below with reference to the drawings. The technical concept of the present invention will be more clearly understood through the embodiments. Furthermore, the present invention is not limited to the embodiments described below, and may be modified into various forms within the scope of the technical concept of the present invention. In this specification, directions such as up, down, upper surface, and bottom surface refer to directions shown in the referenced drawings, unless otherwise specified.

[0026] FIG. 1 shows the preparation of first and second base master plates during a manufacturing process according to one embodiment of the present invention.

[0027] A pair of base plates that will form the heat dissipation device, namely, a first base 12 and a second base 13, are prepared. The first and second bases 12 and 13 may be made of a metal plate having excellent thermal conductivity and workability, such as aluminum or copper, and are not limited to the examples shown here. The first and second bases 12 and 13 do not need to have the same thickness, but it is preferable that they have the same planar dimensions.

[0028] The first and second bases 12 and 13 have alignment marks that match each other at the same position in a plan view. The shape of the alignment marks is not limited, and according to this embodiment, they may be a plurality of pinholes 129 and 139 formed to penetrate the pair of bases 12 and 13. The pinholes 129 and 139 are fitted with alignment pins (not shown) provided separately or in the processing equipment, so that the planar positions of the first and second bases 12 and 13 are aligned with each other or with the processing equipment. Alternatively, various examples of the alignment marks may be used, such as pins and holes, protrusions and grooves that correspond to each other in three dimensions, or vision identification marks.

[0029] 2 shows a state in which a first base plate is processed during a manufacturing process according to an embodiment of the present invention. Hereinafter, the first base plate and the second base plate in the processed state will be referred to as a first base 12 and a second base 13, respectively.

[0030] 1A is a plan view of the first surface 121 of the first base 12, and FIG. 1B is a cross section taken along line IIB-IIB' in FIG. 1A. The first surface 121 corresponds to the inner surface of the two flat surfaces of the first base 12 that faces the second base 13. A plurality of first unit parts 125 that form part of a plurality of heat dissipation device units are formed on the first surface 121 of the first base 12. According to this embodiment, the first unit parts 125 can form part of a water jacket, as an example of a heat dissipation device unit that includes a refrigerant flow path.

[0031] The first unit part 125 is formed with unit grooves 122 that form part of the cooling water receiving space of the water jacket, and a plurality of cooling fins 123 disposed in each unit groove 122. The structure of the first unit part 125, including the unit grooves 122 and the plurality of cooling fins 123, can be processed, for example, by using a CNC machining tool to cut the unit grooves 122 while leaving the plurality of cooling fins 123. However, the processing method is not limited to this embodiment. In designing and processing the first base 12, the positions of the plurality of first unit parts 125 are determined based on the positions of the plurality of pinholes 129, i.e., alignment marks.

[0032] Meanwhile, it is preferable that a second surface 126 of the first base 12 opposite to the first surface 121 be kept flat, since an insulating layer and an electrode pattern will be disposed on the second surface 126.

[0033] FIG. 3 shows a state in which the second base plate is processed during the manufacturing process according to an embodiment of the present invention.

[0034] 1A is a plan view of a first surface 131 of the second base 13, and FIG. 1B is a cross section taken along line IIIB-IIIB' in FIG. 1A. The first surface 131 corresponds to the inner surface of the two flat surfaces of the second base 13 that faces the first base 12. A plurality of second unit parts 135 that constitute a portion of a plurality of heat dissipation device units are formed on the first surface 131 of the second base 13. According to this embodiment, the second unit parts 135, together with the first unit part 125 of FIG. 2 described above, can constitute a water jacket unit as an example of a heat dissipation device unit that includes a refrigerant flow path.

[0035] The second base 13 may be formed with a plurality of unit grooves 132 recessed from the first surface 131, each corresponding to the plurality of unit grooves 122 in FIG. 2. A cooling water inlet / outlet 133 through which cooling water flows in and out may be formed in each of the plurality of unit grooves 132. The cooling water inlet / outlet 133 may be formed as a through-hole passing through the bottom of the unit groove 131 formed by removing a portion of the second base 13 on the first surface 131 side. In designing and manufacturing the second base 13, the positions of the plurality of second unit parts 135 are determined based on the positions of a plurality of pinholes 139, i.e., alignment marks.

[0036] Meanwhile, although not shown, cooling fins (not shown) having the same or similar shapes as the cooling fins 123 formed in the unit grooves 122 of the first base 12 may be further formed inside the unit grooves 132 of the second base 13. The cooling fin formation process may also be performed simultaneously with the formation of the unit grooves 132.

[0037] FIG. 4 shows a heat dissipation device integrated base in which the first base of FIG. 2 and the second base of FIG. 3 are joined together.

[0038] The first surface 121 of the first base 12 and the first surface 131 of the second base 13 are disposed opposite each other and joined together to form the heat dissipation device-integrated base 10. At this time, the joining is performed while the pinholes 129 and 139 are aligned with each other, so that the first unit parts 125 of the first base 12 and the second unit parts 135 of the second base 13 are joined together to form a plurality of water jacket units. A joint 141 between the first surface 121 of the first base 12 and the first surface 131 of the second base 13 can be formed by brazing, for example.

[0039] Brazing is a method of joining two metal base materials by melting only a metal filler metal without melting the base metal at temperatures above 450°C. The molten filler metal penetrates between the surfaces of the two base materials by capillary action and then solidifies to join the two base materials. According to this embodiment, the filler metal is placed between the first surface 121 of the first base 12 and the first surface 131 of the second base 13, and the two base plates are heated and cooled to form a joint 141 where the filler metal melts and re-solidifies. The joint 141 formed by brazing has lower thermal resistance and better airtightness than other joints / bonds.

[0040] However, the joining method described above is not limited to brazing, and any joining method that can ensure the airtightness of the water jacket unit, such as adhesive bonding or bolt fastening including sealing, can be applied.

[0041] In addition, a third member (not shown) may be added between the first base 12 and the second base 13, and the first and second bases 12, 13 and the third member may be joined together, so that the refrigerant flow spaces formed in the first and second bases 12, 13 and the third member together complete the spaces of the multiple heat dissipation device units.

[0042] FIG. 5 shows a state in which the first surface of the electrode metal plate is processed during the manufacturing process according to one embodiment of the present invention.

[0043] The electrode metal plate 30 is a metal plate on which one or more electrode pattern units for forming a circuit of a high-power semiconductor device module can be arranged, and may further include a pinhole 309 as an alignment mark, as shown. The electrode metal plate 30 may be made of a metal material for electrodes, such as copper. Pattern grooves 320 corresponding to the plurality of electrode pattern units are formed on a first surface 301 of the electrode metal plate 30. The pattern grooves 320 are formed by processing portions corresponding to the pattern spaces between electrodes and portions corresponding to the peripheries of electrode groups consisting of a plurality of electrodes that form one circuit to a predetermined depth that is shallower than the thickness of the electrode metal plate 30, and a residual portion 321 of a predetermined thickness is left at the bottom of the pattern grooves 320. The processing for forming the pattern grooves 320 may be performed, for example, using a CNC cutting machine M, laser processing, press processing, or the like.

[0044] The design and processing of the plurality of electrode pattern units can also be performed based on the position of the alignment mark so that one electrode pattern unit is positioned corresponding to each of the plurality of water jacket units shown in Figure 4 described above.

[0045] As described above, the production of the heat dissipation device-integrated base 10 explained with reference to FIGS. 1 to 4 and the processing of the electrode metal original plate 30 shown in FIG. 5 can be carried out in parallel regardless of the time sequence.

[0046] FIG. 6 shows a state in which the electrode metal plate of FIG. 5 is bonded onto the heat dissipation device integrated base of FIG.

[0047] Next, the electrode metal plate 30 processed as shown in Fig. 5 is bonded to the upper surface 126 of the heat dissipation device-integrated base 10, which has been bonded as shown in Fig. 4, using an insulating resin. At this time, the first surface 301 of the electrode metal plate 30, on which the pattern groove 320 is formed, is bonded to the upper surface 126 of the heat dissipation device-integrated base 10 via the insulating resin. During bonding, the positions of the two components can be aligned by aligning the pinholes 309 of the electrode metal plate 30 with the pinholes 129, 139 of the heat dissipation device-integrated base 10. When the insulating resin hardens, an insulating layer 21 located between the upper surface 126 of the heat dissipation device-integrated base 10 and the electrode region in the electrode metal plate 30 and an insulator filling portion 22 located in the pattern groove 320 are formed.

[0048] Here, the bonding of the electrode metal plate 30 and the heat dissipation device-integrated base 10 using an insulating resin may include a vacuum hot pressing process, the process temperature of which is lower than the process temperature of the brazing process and the heat resistance temperature of the bonding portion 141. Therefore, as in this embodiment, it is advantageous to perform the bonding process of the heat dissipation device-integrated base 10 first and then bond the electrode metal plate 30 thereon. If the two bonding processes were performed in the opposite order, the insulator may melt or be damaged by heat during brazing, resulting in problems such as deformation of the electrode pattern or insulation breakdown.

[0049] Thereafter, as indicated by the dotted arrows in the figure, the second surface 302 of the electrode metal plate 30 is entirely removed, or at least the remaining portion 321 is selectively removed. To remove the remaining portion 321, an etching process or a cutting process may be used. During etching, an etch mask may be used to selectively remove only the remaining portion 321.

[0050] Alternatively, unlike the above-described embodiment, after the heat dissipation device-integrated base 10 is completed, a flat electrode metal plate may be bonded to the upper surface of the base via an insulating resin, and then the electrode metal plate may be processed to form a plurality of electrode pattern units. Whether a method of first processing a plurality of pattern groove units corresponding to a plurality of electrode pattern units into an electrode metal plate, bonding the electrode metal plate, and then removing the remaining portions, or a method of bonding a flat electrode metal plate and then processing a plurality of electrode pattern units, is used, a base plate for a semiconductor heat dissipation substrate can be completed in which the plurality of electrode pattern units are arranged one-to-one on top of each of the plurality of heat dissipation device units formed in the heat dissipation device-integrated base.

[0051] FIG. 7 shows a state before cutting of the original plate of the heat dissipation substrate for semiconductors according to one embodiment of the present invention.

[0052] This figure shows the state in which a plurality of electrodes 31, pattern spaces 32, and peripheral portions 33 have been formed for each electrode pattern unit 36 ​​after the process of removing the remaining portion 321 in Figure 6 described above has been completed. The electrode pattern units 36 are arranged corresponding to the upper portions of a plurality of water jacket units provided within the heat dissipation device-integrated base 10. When cut into units in this state along cutting lines C, a combination of an electrode pattern forming a circuit for a high-power semiconductor device module and a water jacket integrally formed below the electrode pattern, i.e., a heat dissipation device (water jacket)-integrated heat dissipation substrate for semiconductors 101, is provided.

[0053] Meanwhile, in the above-mentioned embodiments of Figures 1 to 7, examples were described in which multiple units of the same standard were simultaneously manufactured on one original plate, making it suitable for mass production. However, since the processing steps of Figures 2, 3 and 5 are all carried out using a design and processing method based on the same alignment mark, the manufacturing method of the present invention can also be used for small-scale production of various types of heat dissipation substrates for semiconductors integrated with heat dissipation devices that are not of the same standard.

[0054] FIG. 8 illustrates the processing of the first and second bases during a manufacturing process according to one embodiment of the present invention.

[0055] 2 and 3, this figure relates to a method for manufacturing a heat dissipation substrate for semiconductors in which a heat exchanger having a refrigerant flow path is integrally formed as a heat dissipation device. (a) shows the first base 12B as viewed from the first surface 121 of the inner surface, and (b) shows the second base 13B as viewed from the first surface 131 of the inner surface. The first and second bases 12B and 13B can be provided with a plurality of pinholes 129 and 139 as alignment marks for aligning them when they are joined together.

[0056] As shown in (a) and (b), a first unit part 127 and a second unit part 137 for configuring a plurality of heat dissipation device units are formed on the first surface 121 of the first base 12B and the first surface 131 of the second base 13B, respectively. A first flow path pattern groove 128 and a second flow path pattern groove 138 are machined in the first and second unit parts 127 and 137, respectively. The first and second flow path pattern grooves 128 and 138 can be machined using a CNC cutting machine or other methods such as press work. The first and second flow path pattern grooves 128 and 138 are arranged opposite each other to form refrigerant flow paths. For example, the first and second flow path pattern grooves 128 and 138 may have a rectangular cross section with a predetermined depth. However, various modifications are possible, such as varying the depths of the first and second flow path pattern grooves 128 and 138 or forming them with semicircular cross sections, as needed.

[0057] In addition, the heat dissipation device unit that can be integrally formed within the heat dissipation device-integrated base according to the present invention may include various types of heat dissipation devices having a refrigerant flow path (including a flow space) formed between the first and second base substrates, such as a heat pipe, in addition to the water jacket or heat exchanger mentioned above.

[0058] FIG. 9 shows a state before cutting of the original plate of the heat dissipation substrate for semiconductors to which the first and second bases of FIG. 8 are applied.

[0059] Although not shown separately here, following the process of Fig. 8, the first base 12B having the plurality of first unit parts 127 formed thereon and the second base 13B having the plurality of second unit parts 137 formed thereon are bonded to each other so that their first surfaces 121, 131 face each other to form the heat dissipation device-integrated base 10B. Here, the method for bonding them is as described above with reference to Fig. 4.

[0060] 5 and 6, the electrode metal plate 30 is processed and bonded to the heat dissipation device-integrated base via an insulating resin, and then the remaining portion on the front side of the electrode metal plate 30 is removed to form a plurality of electrode pattern units 36 corresponding to the plurality of heat dissipation device units, respectively. Through this process, the electrode pattern units 36 and the heat exchanger units are combined together to form a single unit, which is then cut along cutting lines C to manufacture a plurality of heat dissipation substrates for semiconductors integrated with a heat dissipation device 102.

[0061] FIG. 10 illustrates a manufacturing process of a heat dissipation device-integrated base in a manufacturing process of a heat dissipation substrate for semiconductors integrated with a heat dissipation device according to an embodiment of the present invention.

[0062] The first base 12C, which provides a flat top surface 126C on which the plurality of electrodes are arranged to be insulated from one another, can be formed by processing a metal plate having a predetermined thickness, i.e., a first base plate, as in the above-described embodiment, and a plurality of cooling fins 123C protruding in a direction away from the top surface 126C may be disposed on the opposite side of the top surface 126C. The plurality of cooling fins 123C can be formed by cutting the bottom surface 121C of the first base plate. However, the method for forming the plurality of cooling fins 123C is not limited to cutting.

[0063] The second base 13C, which forms a refrigerant flow space between two opposing inner surfaces together with the first base 12C, can be formed by machining a metal plate-like second base original plate or a metal block with a groove of a predetermined depth formed on the inner surface. The groove of the second base 13C forms the refrigerant flow space and is disposed in the center of the inside of the second base 13C facing the first base 12C. The second base 13C has a first bottom surface 132C that is shallow and flat, and a second bottom surface 136C that is connected to both ends of the first bottom surface 132C and is deeper than the first bottom surface 132C. The second bottom surface 136C may be gradually deeper from the portion connected to the first bottom surface 132C toward both ends. A side wall portion 137C located at the end of the second bottom surface 132C is provided with a cooling water inlet / outlet 133C that connects the space formed between the second bottom surface 136C and the first base 12C to the outside and is formed to allow cooling water to flow in and out, for example.

[0064] Meanwhile, a plurality of fin grooves 138C corresponding to the plurality of cooling fins 123C of the first base 12C are arranged on the first bottom surface 132C of the second base 13C. The plurality of fin grooves 138C may be formed to accommodate a portion of an end of each of the plurality of cooling fins 123C. The plurality of cooling fins 123C may be formed in a shape such as a cylinder, an elliptical cylinder, a rectangular pillar, or a hexagonal pillar, and the plurality of fin grooves 138C may be formed in a corresponding shape such as a circle, an ellipse, a rectangle, or a hexagon to match the shape of the plurality of cooling fins 123C, and may have a predetermined depth shorter than the length of the plurality of cooling fins 123C.

[0065] The second base 13C may be formed of an aluminum or aluminum alloy block, taking into consideration the volume due to the depth of the first and second bottom surfaces 132C and 136C. In this case, at least a portion of the structures, such as the first and second bottom surfaces 132C and 136C and the plurality of fin grooves 138C, may be formed by die casting. The first and second bottom surfaces 132C and 136C and side wall portion 137C may be formed by die casting, and the plurality of fin grooves 138C, which require precision, may be formed by cutting.

[0066] FIG. 11 shows an assembled state of the heat dissipation device integrated base during the manufacturing process of the heat dissipation board for semiconductor integrated with a heat dissipation device according to one embodiment of the present invention.

[0067] The heat dissipation device-integrated base 10C according to this embodiment may be formed by joining two opposing inner surfaces of the first base 12C and the second base 13C. As an example, the first base 12C and the second base 13C may be joined to each other by brazing. A brazed joint 141C may be formed between a sidewall 137C forming an edge of the second base 13C and the bottom surface of the first base 12C. In this case, the ends of the cooling fins 123C are inserted into the fin grooves 138C, and brazed joints may also be formed at contact portions between the ends of the cooling fins 123C and the fin grooves 138C.

[0068] This structure is advantageous in that it strengthens the bonding strength between the first base 12C and the second base 13C and maintains the bond between them even when there is a difference in the degree of thermal expansion due to differences in temperature and / or linear expansion coefficients between them. In addition, since the cooling fins 123C are fitted into the fin grooves 138C and supported in the lateral direction, thermal expansion deformation of the first base 12C in the lateral direction, i.e., the direction parallel to the top surface, can be suppressed.

[0069] The refrigerant flow space formed between the first base 12C and the second base 13C is divided into a main cooling section 110C, which is relatively narrowly spaced by the first bottom surface 132C, and a water inlet / outlet section 116C, which is relatively widely spaced by the second bottom surface 136C, at the side of the gap between the inner surfaces of the first base 12C and the second base 13C. The flow rate of the refrigerant, e.g., cooling water, is faster in the narrower section 110C. This structure allows the cooling water to flow through the cooling fins 123C at a high speed, improving cooling efficiency.

[0070] FIG. 12 illustrates a step of preparing an electrode metal substrate in a manufacturing process of a heat dissipation substrate for a semiconductor integrated with a heat dissipation device according to an embodiment of the present invention.

[0071] 10 and 11, an electrode metal plate 30C is prepared. As in the embodiment of FIG. 5, pattern grooves 320 corresponding to a circuit pattern including a plurality of electrodes are formed on the first surface 301 of the electrode metal plate 30C. The pattern grooves 320 are formed by processing a portion corresponding to the pattern space between electrodes to a predetermined depth that is shallower than the thickness of the electrode metal plate 30, and a residual portion 321 of a predetermined thickness is left at the bottom of the pattern grooves 320. The processing to form the pattern grooves 320 may be performed using, for example, a CNC cutting machine M, laser processing, press processing, or the like.

[0072] The electrode metal plate 30C preparation step according to this embodiment differs from the embodiment shown in FIG. 5 in that one or more electrode metal plates 30C correspond to one heat dissipation device-integrated base assembly. When multiple electrode metal plates 30C are used, each of the multiple electrode metal plates 30C may have a circuit pattern formed thereon, constituting one circuit unit. For example, when constructing a three-phase inverter module on one heat dissipation device-integrated base (10C, see FIG. 11), three electrode metal plates 30C may be provided with one circuit pattern each constituting three inverter circuit units. To achieve this, in this step, pattern grooves 320 corresponding to the circuit patterns may be formed in the three electrode metal plates 30C.

[0073] FIG. 13 shows a step of bonding an electrode metal plate and a heat dissipation device-integrated base in a manufacturing process of a heat dissipation substrate for semiconductors integrated with a heat dissipation device according to an embodiment of the present invention.

[0074] In this step, one or more electrode metal plates 30C having the pattern grooves 320 formed therein by the step of FIG. 12 are bonded to the upper surface of the heat dissipation device-integrated base 10C via an insulator portion 20C. Here, as mentioned in the description of FIG. 6, the insulator portion 20C may be an insulating resin applied to the first surface 301 of the electrode metal plate 30C having the pattern grooves 320 formed therein or to the upper surface of the heat dissipation device-integrated base 10C. Alternatively, the insulator portion 20C may be provided in the form of a semi-cured sheet of insulating resin. Such a semi-cured sheet of insulating resin may contain a ceramic mesh.

[0075] As described above, the vacuum hot pressing process can be used as a method for hardening the insulator portion 20C so that the one or more electrode metal original plates 30C can be joined to the heat dissipation device-integrated base 10C via the insulator portion 20C. The vacuum hot pressing process may be performed at a temperature significantly lower than the melting point of the brazing joint 141C that joins the first and second bases 12C, 13C of the heat dissipation device-integrated base 10C.

[0076] FIG. 14 shows a cross section of a heat dissipation board for a semiconductor integrated with a heat dissipation device according to one embodiment of the present invention.

[0077] 13, and then, as described in the description of FIG. 6, by removing the remaining portion (321, see FIG. 12) from the electrode metal base plate 30C, a heat dissipation substrate for semiconductors integrated with a heat dissipation device 100C can be completed, in which one or more circuit units 36 are bonded and integrated onto the upper surface of the heat dissipation device-integrated base 10C via the insulator portion 20C, as shown in FIG. 14. The process of removing the remaining portion 321 can include cutting and / or etching.

[0078] 13, a part of the insulator portion 20C forms an insulating layer 21C of a predetermined thickness between the electrode metal plate 30C and the heat dissipation device-integrated base 10C, and another part fills the pattern groove 320. As a result, the insulating resin filling the pattern groove 320 forms an insulator filling portion 22C that supports a part of the side surface of the plurality of electrodes 31 in the pattern space 32 between the plurality of electrodes 31.

[0079] 13-14, the electrode metal plate 30C on which the pattern grooves 320 are formed may be arranged so that its second surface (302, see FIG. 13) opposite to the first surface 301 on which the pattern grooves 320 are formed faces the upper surface of the heat dissipation device-integrated base 10C, and joined via the insulator 20C. In this case, the electrodes 31 may be formed in an island-like shape floating on the insulator 20C. In this case, the shape is different from that of the embodiment of FIG. 14, in which the electrodes 31 are arranged in a shape partially embedded in the insulator 20C. However, in terms of the resistance to detachment of the electrodes 31, the arrangement as in the embodiment of FIG. 14 is more advantageous.

[0080] FIG. 15 is an exploded perspective view of a base of the heat dissipation board for a semiconductor integrated with a heat dissipation device according to the embodiment of FIG.

[0081] This figure shows the first base 12C and the second base 13C of the heat dissipation device-integrated base in an open state without being joined together, for the purpose of understanding the heat dissipation board for semiconductors integrated with a heat dissipation device according to the embodiment of Figure 14. As described above, a plurality of cooling fins 123C are arranged on the bottom surface 121C of the first base 12C in a shape that protrudes from the bottom surface 121C.

[0082] The cooling fins 123C may be formed, for example, in an elliptical cylindrical shape. The fin grooves 138C are also formed in a shape corresponding to the cooling fins 123C. The refrigerant flow space formed as a recessed groove surrounded by the sidewall portion 137C in the second base 13C is defined by a first bottom surface 132C, which is shallow and flat, and a second bottom surface 136C, which is connected to both ends of the first bottom surface 132C and gradually deepens outward, together with the bottom surface 121C of the first base 12C. Cooling water inlet / outlet ports 133C are provided in the sidewall portions 137C at both ends close to the second bottom surface 136C, and the insides of the cooling water inlet / outlet ports 133C form the water inlet / outlet portion 116C. The shallow space formed by the first bottom surface 132C forms the main cooling portion 110C. The water inlet / outlet section 116C can be configured so that its depth gradually becomes shallower while its width gradually increases as it moves from the cooling water inlet / outlet 133C toward the main cooling section 110C, allowing the cooling water to come into contact with a greater number of cooling fins 123C in the main cooling section 110C.

[0083] The cooling fins 123C may have an elliptical cross section that is elongated in the longitudinal direction connecting the water inlet / outlet sections 116C on both sides of the main cooling section 110C. This cooling fin shape helps reduce resistance to the flow of cooling water. Although the present invention is not limited to this embodiment, it is preferable that the cross section of the cooling fins 123C be a diamond shape in which the width in the longitudinal direction is narrower than the width in the perpendicular direction, so that the cooling water can flow smoothly in a laminar flow.

[0084] Meanwhile, the first base 12C and the second base 13C are provided with a plurality of pinholes 129C and 139C, respectively, which can be used to align these components during processing. Also, the plurality of pinholes 129C and 139C may be used as screw holes for fastening the first base 12C to the second base 13C.

[0085] FIG. 16 is a perspective view of the heat dissipation board for a semiconductor integrated with a heat dissipation device according to the embodiment of FIG.

[0086] This figure shows the heat dissipation board for semiconductors integrated with a heat dissipation device 100C according to this embodiment as viewed diagonally from above. One or more circuit units 36 may be arranged on the upper surface 126C of the first base 12C. For example, three inverter circuit units constituting a three-phase inverter module may be arranged on one heat dissipation device-integrated base, as described above with reference to FIGS. 12 to 14.

[0087] FIG. 17 shows a cross section of a heat dissipation substrate for a semiconductor integrated with a heat dissipation device according to another embodiment of the present invention.

[0088] The heat dissipation board 100F integrated with a heat sink for a semiconductor according to this embodiment differs from the heat dissipation board 100C integrated with a heat sink for a semiconductor according to the embodiment of FIG. 14 in that the first bottom surface 132F of the second base 13F is flat and does not have fin grooves corresponding to the cooling fins 123F. The depth of the first bottom surface 132F relative to the upper end of the side wall portion 137F may be the same as the length of the cooling fins 123F relative to the inner surface of the first base 12F, and the distal ends of the cooling fins 123F may be joined to the second bottom surface 132F via brazed joints 141F. This structure improves the efficiency of heat conduction between the first base 12F and the second base 13F and enhances structural stability. [Explanation of symbols]

[0089] 10, 10B: 10C, 10F: Integrated heat sink base 12, 12C, 12F: 1st bass 13, 13C, 13F: Second bass 20, 20C: Insulator part 21, 21C: Insulating layer 22C: Insulator filling section 30, 30C: Electrode metal original plate 31: Electrode 32: Pattern Space 101, 102: Heat dissipation substrate for semiconductor integrated with heat dissipation device 122: First (water jacket) unit groove 123, 123C: Cooling fins 125: First (water jacket) unit parts 128: First flow path pattern groove 132: Second (water jacket) unit groove 135: Second (water jacket) unit parts 138: second flow path pattern groove, 138C: fin groove 141, 141C, 141F: Brazed joints 320: Pattern groove 321:Residual part

Claims

1. A method for manufacturing a heat dissipation substrate for semiconductors, the heat dissipation substrate being for mounting semiconductor elements, comprising: a plurality of electrodes separated from each other by pattern spaces and electrically insulated; a metal base integrally provided with a coolant flow space for absorbing and releasing heat transferred from the plurality of electrodes; and an insulating layer formed of insulating resin and joining the plurality of electrodes to the metal base, a base processing step of preparing a first base original plate and a second base original plate in the form of metal plates that are stacked on each other to form at least a part of the metal base, and providing a first base and a second base on at least one inner surface of the first base original plate and the second base original plate, the first base and the second base having a three-dimensional structure that forms the refrigerant flow space; a base coupling step of butting and coupling inner surfaces of the first base and the second base facing each other to form a heat dissipation device-integrated base including the refrigerant flow space; an electrode metal original plate preparation step of processing an electrode metal original plate of a metal plate material that will form the plurality of electrodes to form pattern grooves corresponding to the pattern spaces, and providing an electrode metal original plate that can cover an area corresponding to at least one circuit unit with a remaining portion left after forming the pattern grooves so that no opening is formed; an electrode metal plate bonding step of bonding the electrode metal plate to an upper surface of the heat dissipation device-integrated base formed in the base bonding step via an insulating resin; the base joining step is a step of joining the first base and the second base by a brazing process, the electrode metal plate joining step is performed after the base joining step, and the process temperature of the electrode metal plate joining step is lower than the heat-resistant temperature of the base joining step; A method for manufacturing a heat dissipation substrate for semiconductors with an integrated heat dissipation device.

2. In the base processing step, the second base is formed to have a first bottom surface that is shallow and flat and disposed at a center portion inside facing the first base, and a second bottom surface that is connected to both side ends of the first bottom surface and is deeper than the first bottom surface, and a side wall portion disposed at the end of the second bottom surface is formed with a refrigerant inlet / outlet that connects a space formed between the second bottom surface and the first base to the outside. A method for manufacturing the heat dissipation substrate for semiconductors integrated with a heat dissipation device according to claim 1 .

3. the refrigerant flow space is defined by a plurality of cooling fins protruding toward the refrigerant flow space, and end portions of the plurality of cooling fins are fixedly supported by the first bottom surface of the three-dimensional structure. the second base further includes a plurality of fin grooves on the first bottom surface, the fin grooves receiving end portions of the plurality of cooling fins, and the first base and the second base are coupled to each other with the end portions of the plurality of cooling fins inserted into the fin grooves. A method for manufacturing the heat dissipation substrate for semiconductors integrated with a heat dissipation device according to claim 2.

4. The electrode metal plate bonding step includes: forming an insulating layer between the first surface of the electrode metal plate on which the pattern groove is formed and the upper surface of the heat dissipation device-integrated base, and joining the electrode metal plate so that the pattern groove is filled with an insulator; A method for manufacturing the heat dissipation substrate for semiconductors integrated with a heat dissipation device according to claim 1 or 2.

5. The electrode metal plate bonding step includes: forming the insulating layer using a semi-cured insulating resin sheet; A method for manufacturing the heat dissipation substrate for semiconductors integrated with a heat dissipation device according to claim 4.

6. and an electrode forming step of removing the remaining portion from the upper surface of the electrode metal plate after the electrode metal plate joining step, thereby separating the plurality of electrodes from each other. A method for manufacturing the heat dissipation substrate for semiconductors integrated with a heat dissipation device according to claim 4.

7. The base processing step and the base bonding step include: a heat dissipation device unit including the refrigerant flow space formed between two opposing inner surfaces of the first and second bases, the heat dissipation device unit being selected from the group including a water jacket, a heat exchanger, and a heat pipe, is integrally formed by processing the first and second bases and joining the first and second bases; A method for manufacturing the heat dissipation substrate for semiconductors integrated with a heat dissipation device according to claim 1 or 2.

8. The base processing step includes: processing the first and second bases so that a plurality of the heat dissipation device units are arranged in a plane within one heat dissipation device-integrated base; A method for manufacturing the heat dissipation substrate for semiconductors integrated with a heat dissipation device according to claim 7.

9. a plurality of circuit units, each of which constitutes one circuit using the plurality of electrodes and the pattern space, are arranged on the heat dissipation device-integrated base in correspondence with the plurality of heat dissipation device units, respectively, to prepare an original plate for a semiconductor heat dissipation substrate; a cutting step of cutting the base plate of the semiconductor heat dissipation substrate to provide a plurality of heat dissipation device-integrated semiconductor heat dissipation substrate units; A method for manufacturing the heat dissipation substrate for semiconductors integrated with a heat dissipation device according to claim 8.

10. The base processing step processes the first and second bases so that one heat dissipation device unit is configured in one heat dissipation device-integrated base; the electrode metal plate preparation step and the electrode metal plate joining step include providing a plurality of electrode metal plates, each having a pattern groove formed thereon corresponding to one circuit unit, and joining the plurality of electrode metal plates to the upper surface of the single heat dissipation device-integrated base; A method for manufacturing the heat dissipation substrate for semiconductors integrated with a heat dissipation device according to claim 7.

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