Ceramic structure and method for manufacturing the same

Abstract

To provide a ceramic structure excellent in adhesion of an electroless plating film.SOLUTION: A ceramic structure 10 includes a ceramic substrate 11 having a roughened part 11A at least on a part of the surface. and an electroless plating film 121 formed on the roughened part 11A on the substrate 11. A width W1 of the electroless plating film 121 is smaller than a dimension W2 along a width direction of the electroless plating film 121 of the roughened part 11A.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] The present invention relates to a ceramic structure and a method for manufacturing a ceramic structure. [Background technology]

[0002] Ceramic structures in which a metal film is formed on the surface of a ceramic are known. For example, Japanese Patent Application Laid-Open No. 2001-267101 describes a ceramic resistor in which electrodes made of electrolessly plated metal films with excellent electrical conductivity are formed on a ceramic resistor whose main component is aluminosilicate and whose open porosity is less than 1%. The electrolessly plated film of this ceramic resistor is formed on the surface of the ceramic resistor, which has been roughened to an average roughness of 1 to 100 μm.

[0003] Japanese Patent No. 3827113 describes a method for manufacturing a composite member consisting of a ceramic-metal layer, in which a vapor-phase plating film is formed on the surface of a ceramic, and then an electrolytic plating film is formed on the vapor-phase plating film. In this manufacturing method, the center line average roughness of the ceramic is 1.0 μm or less, and the number of pores with a major diameter of 3 μm or more present on the ceramic surface is 100 / mm 2 The following is the result.

[0004] Japanese Patent Application Laid-Open No. 2005-93822 describes a ceramic wiring board comprising a ceramic insulating substrate and a wiring conductor layer bonded to at least one surface of the insulating substrate. The publication describes methods for forming the wiring conductor layer, such as forming a circuit pattern by photolithography on metal foil adhered to a polymer film and then transferring the pattern to a ceramic green sheet by pressure bonding, and forming a circuit pattern by photolithography on metal foil directly adhered to the surface of the green sheet.

[0005] WO 2016 / 013464 describes a method for forming wiring patterns (electrical circuits) without using photolithography, using a catalyst deactivator to manufacture plated parts. This method includes applying a catalyst deactivator to the surface of a substrate, heating or irradiating a portion of the surface of the substrate with light, supporting an electroless plating catalyst on the surface of the substrate, and contacting the surface of the substrate supporting the electroless plating catalyst with an electroless plating solution to form an electroless plated film on the heated or irradiated portion of the surface.

[0006] Although not related to ceramic structures, Japanese Patent Laid-Open Publication No. 2021-161516 describes a circuit component that can achieve both high heat dissipation and high adhesion of circuit wiring. This circuit component includes a metal member, an insulating resin layer formed on the metal member, circuit wiring including a plating film formed on the insulating resin layer, and a mounted component. This circuit component has a plurality of blind holes filled with a plating film formed on the surface of the insulating resin layer in a wiring region where the circuit wiring is formed, and the ratio d / D of the depth d of the blind holes to the width D of the blind holes is 0.5 to 5. [Prior art documents] [Patent documents]

[0007] [Patent Document 1] Japanese Patent Application Laid-Open No. 2001-267101 [Patent Document 2] Patent No. 3827113 [Patent Document 3] Japanese Patent Application Laid-Open No. 2005-93822 [Patent Document 4] International Publication No. 2016 / 013464 [Patent Document 5] Patent Publication No. 2021-161516 Summary of the Invention [Problem to be solved by the invention]

[0008] An object of the present invention is to provide a ceramic structure having excellent adhesion to an electroless plating film and a method for producing the same. [Means for solving the problem]

[0009] A ceramic structure according to one embodiment of the present invention comprises a ceramic substrate having a roughened portion on at least a portion of its surface, and an electroless plating film formed on the roughened portion of the substrate, wherein a width W1 of the electroless plating film is smaller than a dimension W2 along the width direction of the electroless plating film in the roughened portion.

[0010] The substrate may have a surface between adjacent electroless plating films that has a smaller surface roughness than the roughened portion, and the surface roughness of the roughened portion where the electroless plating film is formed may be greater than the surface roughness of the roughened portion where the electroless plating film is not formed.

[0011] The roughened portion may have a plurality of recesses formed therein, and a ratio W / D of a diameter W of the recesses to a depth D of the recesses may be 0.5 to 4.0. The diameter W of the plurality of recesses may be 3 to 100 μm.

[0012] The difference W2-W1 between the dimension W2 of the roughened portion along the width direction of the electroless plating film and the width W1 of the electroless plating film may be 1 μm to 1.0 mm. The ratio W2 / W1 of the dimension W2 of the roughened portion along the width direction of the electroless plating film to the width W1 of the electroless plating film may be 1.1 to 2.0. The adhesion strength of the electroless plating film to the substrate may be 3 N / cm or more.

[0013] A method for producing a ceramic structure according to one embodiment of the present invention is a method for producing the above-mentioned ceramic structure, and includes the steps of: preparing a molded body of a ceramic composition; roughening at least a portion of the surface of the molded body; firing the molded body to form the substrate; applying a catalyst deactivator to the surface of the substrate; heating or irradiating with light a portion of the roughened portion of the surface of the substrate to which the catalyst deactivator has been applied; applying an electroless plating catalyst to the heated or light-irradiated surface of the substrate; and contacting an electroless plating solution with the surface of the molded body to which the electroless plating catalyst has been applied, and forming the electroless plating film on the heated or light-irradiated portion of the surface. [Effects of the Invention]

[0014] According to the present invention, a ceramic structure having excellent adhesion to an electroless plating film can be obtained. [Brief explanation of the drawings]

[0015] [Figure 1] FIG. 1 is a plan view schematically showing the configuration of a ceramic structure according to one embodiment of the present invention. [Figure 2] FIG. 2 is an enlarged view of region II in FIG. [Figure 3] FIG. 3 is a cross-sectional view taken along line III-III in FIG. [Figure 4] FIG. 4 is a schematic plan view showing an example of the shape of the recess. [Figure 5] FIG. 5 is a schematic cross-sectional view showing an example of the shape of the recess. [Figure 6] FIG. 6 is a flow diagram of an example of a method for manufacturing a ceramic structure. [Figure 7] FIG. 7 is a diagram illustrating an example of a method for forming a roughened portion having a plurality of recesses by laser writing. [Figure 8] FIG. 8 is a diagram showing a pattern drawn on a molded body in the example. [Figure 9] FIG. 9 is a diagram showing a pattern drawn on a substrate in the example. DETAILED DESCRIPTION OF THE INVENTION

[0016] Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are designated by the same reference numerals, and the description thereof will not be repeated. The dimensional ratios between the components shown in each drawing do not necessarily represent the actual dimensional ratios.

[0017] [Ceramic structure] 1 is a plan view schematically illustrating the configuration of a ceramic structure 10 according to one embodiment of the present invention. The ceramic structure 10 includes a ceramic substrate 11 and a plating film 12 formed on the surface of the substrate 11. The plating film 12 includes an electroless plating film 121.

[0018] The substrate 11 is made of a ceramic molded body. The ceramic material constituting the substrate 11 is, but is not limited to, oxides such as aluminum oxide, silicon oxide, zirconium oxide, titanium oxide, mullite, cordierite, beryllium oxide, magnesium oxide, and barium titanate; carbides such as silicon carbide, boron carbide, aluminum carbide, tungsten carbide, titanium carbide, tantalum carbide, zirconium carbide, hafnium carbide, chromium carbide, vanadium carbide, and carbon; nitrides such as silicon nitride, aluminum nitride, boron nitride, and titanium nitride; silicides such as molybdenum disilicide; and sulfides such as cadmium sulfide and zinc sulfide. The ceramic material constituting the substrate 11 may be a mixture of two or more of these materials.

[0019] The substrate 11 has a roughened portion 11A on at least a portion of its surface. In FIG. 1, the roughened portion 11A is shown hatched. The portion that overlaps with the plating film 12 and the portion that does not overlap with it are shown hatched differently. The roughened portion 11A preferably has a surface roughness Ra of 1.0 μm or more. The lower limit of the surface roughness Ra of the roughened portion 11A is more preferably 2.0 μm, and even more preferably 3.0 μm. The upper limit of the surface roughness Ra of the roughened portion 11A is not particularly limited, but is, for example, 50.0 μm, preferably 20.0 μm, and even more preferably 10.0 μm.

[0020] The substrate 11 preferably has a portion on the surface between adjacent plating films 12 (electroless plating films 121) that has a surface roughness less than that of the roughened portion 11A. Hereinafter, this "portion having a surface roughness less than that of the roughened portion 11A" will be referred to as the non-roughened portion 11B. FIG. 1 illustrates a case where the remaining portion of the surface of the substrate 11, excluding the roughened portion 11A, is the non-roughened portion 11B. However, this is merely an example, and the non-roughened portion 11B may be formed only on the surface between adjacent plating films 12 (electroless plating films 121). Note that "non-roughened" does not necessarily mean that the non-roughened portion 11B is not roughened at all. The non-roughened portion 11B may be roughened to a degree that is not greater than that of the roughened portion 11A. The surface roughness Ra of the non-roughened portion 11B is not particularly limited as long as it is smaller than that of the roughened portion 11A, but is preferably 3.0 μm or less, more preferably 1.0 μm or less, and even more preferably 0.8 μm or less.

[0021] Fig. 2 is an enlarged view of a portion (region II in Fig. 1) of roughened portion 11A of substrate 11, and Fig. 3 is a cross-sectional view taken along line III-III in Fig. 2. A plurality of recesses (non-penetrating holes) 11a are formed in roughened portion 11A. The shape of recesses 11a will be described in detail below.

[0022] When multiple recesses 11a are formed in the roughened portion 11A as in this embodiment, the surface roughness Ra of the roughened portion 11A varies depending on whether the value includes the recesses 11a or excludes them. In this specification, unless otherwise specified, the "roughness Ra of the roughened portion 11A" refers to a value including the recesses 11a. The surface roughness Ra including the recesses 11a can be measured using conventional methods. When determining the surface roughness Ra excluding the recesses 11a, the recesses 11a appear periodically. This is defined as surface waviness, and the surface roughness Ra can be determined from a roughness curve from which the surface waviness has been removed. Specifically, a high-pass filter with a cutoff value λc can be used to remove long-wavelength components from the cross-sectional curve to obtain a profile curve.

[0023] 3, the plating film 12 includes an electroless plating film 121 formed on the roughened portion 11A of the base material 11. The electroless plating that constitutes the electroless plating film 121 is, but is not limited to, electroless nickel-phosphorus plating, electroless copper plating, electroless nickel plating, electroless copper-nickel plating, etc., and among these, electroless nickel-phosphorus plating is preferred.

[0024] The thickness of electroless plating film 121 is, but not limited to, for example, 0.5 μm to 100 μm. The lower limit of the thickness of electroless plating film 121 is preferably 1 μm, and more preferably 5 μm. The upper limit of the thickness of electroless plating film 121 is preferably 50 μm, and more preferably 30 μm.

[0025] The plating film 12 may further include a second plating film 122 formed on the electroless plating film 121. The second plating film 122 may be an electroless plating film or an electrolytic plating film. Examples of electrolytic plating that constitutes the electrolytic plating film include, but are not limited to, electrolytic nickel phosphorus plating, electrolytic copper plating, and electrolytic nickel plating.

[0026] The thickness of the plating film 12 is, but is not limited to, for example, 10 μm to 100 μm. The lower limit of the thickness of the plating film 12 is preferably 20 μm. The upper limit of the thickness of the plating film 12 is preferably 80 μm. The thickness of the plating film 12 does not include the portion filling the recesses 11 a. In other words, the thickness of the plating film 12 is the distance from the surface of the base material 11 to the surface of the plating film 12.

[0027] Electroless plating film 121 is formed on roughened portion 11A of base material 11. Furthermore, in this embodiment, width W1 of electroless plating film 121 is smaller than the dimension of roughened portion 11A along the width direction of electroless plating film 121 (hereinafter referred to as "width W2 of roughened portion 11A" or simply "width W2"). ​​In other words, electroless plating film 121 is formed inside roughened portion 11A within the plane of base material 11. Note that "the width direction of electroless plating film 121" refers to the direction perpendicular to the direction in which electroless plating film 121 extends within the plane of base material 11.

[0028] The difference W2-W1 between the width W2 of the roughened portion 11A and the width W1 of the electroless plating film 121 is preferably 1 μm to 1.0 mm. If the difference W2-W1 is too small, it becomes difficult to align the electroless plating film during actual production. On the other hand, if the difference W2-W1 is too large, the electroless plating film is more likely to deposit in the roughened portion 11A, reducing the selectivity of the electroless plating film. If the difference W2-W1 is within the range of 1 μm to 1.0 mm, a ceramic structure 10 with an excellent balance of these factors can be obtained.

[0029] The lower limit of the difference W2-W1 is more preferably 5 μm, and even more preferably 10 μm.The upper limit of the difference W2-W1 is more preferably 0.5 mm, and even more preferably 0.2 mm.

[0030] The ratio W2 / W1 of the width W2 of roughened portion 11A to the width W1 of electroless plated film 121 is preferably 1.1 to 2.0. The lower limit of ratio W2 / W1 is more preferably 1.2, and even more preferably 1.3. The upper limit of ratio W2 / W1 is more preferably 1.8, and even more preferably 1.5.

[0031] The width W1 of the electroless plating film 121 is, but is not limited to, 10 μm to 1.0 mm, for example. The lower limit of the width W1 is preferably 30 μm, and more preferably 50 μm. The upper limit of the width W1 is preferably 0.8 mm, and more preferably 0.6 mm.

[0032] The width W2 of the roughened portion 11A is, but is not limited to, 11 μm to 2.0 mm, for example. The lower limit of the width W2 is preferably 12 μm, and more preferably 13 μm. The upper limit of the width W2 is preferably 1.8 μm, and more preferably 1.5 μm.

[0033] In this embodiment, the surface roughness Ra of portion 11A1 of roughened portion 11A on which electroless plating film 121 is formed is greater than the surface roughness Ra of portion 11A2 on which electroless plating film 121 is not formed. As described above, when multiple recesses 11a are formed in roughened portion 11A, the surface roughness Ra of roughened portion 11A varies depending on whether the value includes recesses 11a or excludes recesses 11a. However, in this embodiment, regardless of the definition, the surface roughness Ra of portion 11A1 on which electroless plating film 121 is formed is greater than the surface roughness Ra of portion 11A2 on which electroless plating film 121 is not formed.

[0034] The surface roughness Ra of the portion 11A1 on which the electroless plating film 121 is formed is measured after removing the plating film 12. Various methods can be used to remove the plating film 12, but from the viewpoint of removing only the plating film 12, it is preferable to immerse the substrate 11 in a strong acid such as hydrochloric acid, sulfuric acid, or nitric acid to dissolve the plating film 12.

[0035] [Configuration of roughened portion 11A] Next, the configuration of roughened portion 11A in this embodiment will be described in detail. As described above, a plurality of recesses (blind holes) 11a are formed in roughened portion 11A. Each of recesses 11a is preferably filled with plating film 12.

[0036] 3, each of the recesses 11a has a diameter W and a depth D. The diameter W of the recess 11a refers to the diameter of the opening of the recess 11a. The depth D of the recess 11a refers to the distance from the bottom of the recess 11a to the surface of the substrate 11.

[0037] The shape of the opening of the recess 11a is preferably circular from the viewpoint of ease of formation, but is not limited thereto. The shape of the opening of the recess 11a may be, for example, an ellipse as shown in FIGS. 4(a) to (c), or may be a shape as shown in FIGS. 4(d) and (e). When the shape of the opening of the recess 11a is not circular, the diameter W of the recess 11a refers to the diameter (circle-equivalent diameter) of a circle having the same area as the area of ​​the opening of the recess 11a. The cross-sectional shape of the recess 11a (the shape of a cross section parallel to the depth direction) is also not particularly limited, and the recess 11a may be a cone, pyramid, cylinder, polygonal prism, or the like. The recess 11a may also be a cone, pyramid, cylinder, polygonal prism, or the like, and may further have large irregularities formed on the inclined surfaces or side surfaces (see FIG. 5). The reason why the recess 11a has such a shape is not clear, but it is thought to be due to the fact that the binder is removed and the ceramic powder is sintered during the degreasing and firing processes after molding a mixture of ceramic powder and binder and roughening at least a portion of the molded product.

[0038] The ratio W / D of the diameter W of the recesses 11a to the depth D of the recesses 11a is preferably 0.5 to 4.0. If the ratio W / D is too large, the adhesion between the electroless plating film 121 and the substrate 11 decreases. On the other hand, if the ratio W / D is too small, the selectivity of the electroless plating film 121 decreases. Here, "deteriorating the selectivity (of the electroless plating film)" means that the electroless plating film is more likely to deposit in areas where it should not be formed. If the ratio W / D is within the range of 0.5 to 3.0, a ceramic structure 10 with an excellent balance between adhesion and selectivity can be obtained. The lower limit of the ratio W / D is more preferably 0.6, and even more preferably 0.8. The upper limit of the ratio W / D is more preferably 3.0, and even more preferably 2.5.

[0039] The diameter W of the recesses 11a is, but is not limited to, 3 to 100 μm, for example. The lower limit of the diameter W of the recesses 11a is preferably 10 μm, more preferably 15 μm. The upper limit of the diameter W of the recesses 11a is preferably 80 μm, more preferably 70 μm.

[0040] The depth D of the recesses 11a is, but is not limited to, 5 to 80 μm, for example. The lower limit of the depth D of the recesses 11a is preferably 10 μm, more preferably 15 μm. The upper limit of the depth D of the recesses 11a is preferably 70 μm, more preferably 60 μm.

[0041] The ratio P / W of the distance P between the recesses 11a to the diameter W of the recesses 11a is not limited to this value, but is, for example, 0.3 to 3. The lower limit of the ratio P / W is preferably 0.5, more preferably 1.0. The upper limit of the ratio P / W is preferably 2.5, more preferably 1.5. Here, the distance P between the recesses 11a is the shortest distance between one recess 11a and another recess 11a adjacent thereto, that is, the shortest distance from the edge of the opening of one recess 11a to the edge of the opening of another recess 11a adjacent thereto. If the ratio P / W is too small, the flatness of the plating film 12 may be insufficient. If the ratio P / D is too large, the number of recesses 11a that can be arranged is reduced, and the adhesion of the electroless plating film 121 may be insufficient.

[0042] The distance P between the recesses 11a is, for example, 20 to 300 μm, but is not limited to this. The lower limit of the distance P is preferably 30 μm. The upper limit of the distance P is preferably 150 μm.

[0043] The diameter W and depth D of the recesses 11a, as well as the distance P between the recesses 11a, are calculated, for example, as the average values ​​of multiple recesses 11a present within a predetermined range (measurement range). For example, as described below, these values ​​may be calculated by measuring the height of the roughened portion 11A using an optical measurement method. First, the plating film 12 is removed from the substrate 11 to expose the roughened portion 11A. The surface roughness (Ra) of the entire predetermined range (measurement range) of the roughened portion 11A is measured using an optical measurement device such as a laser microscope. Portions having a depth at least twice the surface roughness (Ra) of the entire measurement range are determined as recesses 11a, and the diameter W of each recess 11a and the distance P between the recesses 11a are measured to calculate the average value. Regarding the depth D of the recesses 11a, it is preferable to measure 10 or more recesses 11a and calculate the average value, taking into account variations in the depth D to eliminate noise in the optical measurement.

[0044] The diameter W and depth D of the recesses 11a, as well as the distance P between the recesses 11a, may be determined by a shape analysis method using X-ray CT, which will be described below. For example, a portion of the ceramic structure 10 including the plating film 12 is cut out to a predetermined size and measured using X-ray CT to obtain an X-ray CT image of only the plating film 12. This X-ray CT image is extracted as slice data for each plane in the depth direction, and the slice depth at which the plating film 12 becomes invisible is defined as the depth D of the recesses 11a. The values ​​of the diameter W and distance P of the recesses 11a are measured from the shape of the image sliced ​​at the surface of the substrate 11. The average values ​​are calculated from the depth D, diameter W, and distance P of each recess 11a thus obtained. Note that the shape analysis method using X-ray CT is suitable for samples with an area of ​​3 to 15 mm2 from the viewpoints of ease of sampling and detection sensitivity. 2 It is preferable to cut out and measure the portion.

[0045] The depth D and diameter W of the recesses 11a may also be determined by observing a cross section of the ceramic structure 10. The cross section observation may be performed, for example, as follows. First, the ceramic structure 10 is cut, and the cross section of the recesses 11a is observed. Then, the cross section is polished and cut by 2 to 3 μm using a file or the like, and the cross section is observed again. This process is repeated to obtain a cross-sectional photograph at the position where the deepest depth of the recesses 11a is observed, and the depth of the recesses 11a determined from this photograph is defined as the depth D. If the shape of the recesses 11a is conical, the diameter W can also be determined from the cross-sectional photograph from which the depth D can be determined. In consideration of variations in the depth D and diameter W, it is preferable to measure 10 or more recesses 11a using the same method and determine the average.

[0046] It is preferable that recesses 11a are formed in a scattered manner so that the density in roughened portion 11A is uniform. This allows the selectivity and adhesion of electroless plating film 121 to be uniform. In order to achieve a uniform density in roughened portion 11A, it is preferable that the following conditions be satisfied: In roughened portion 11A, the difference between the maximum and minimum values ​​of distance P is preferably less than 50% of the average value of distance P in roughened portion 11A. Furthermore, in roughened portion 11A, the density (number of recesses / mm 2 ) and the density in the lowest density area (particles / mm 2 ) is the average density (number / mm 2 ) is preferably less than 50% of the

[0047] [Method of manufacturing ceramic structure] When the electroless plating film 121 of the present application is used as wiring, a ceramic structure 10 having improved wiring adhesion can be obtained. An example of a method for manufacturing the ceramic structure 10 will be described below. FIG. 6 is a flow chart of an example of a method for manufacturing the ceramic structure 10. This manufacturing method includes the steps of preparing a molded body of a ceramic composition (step S1), roughening at least a portion of the surface of the molded body (step S2), firing the molded body to form a substrate (step S3), applying a catalyst deactivator to the surface of the substrate (step S4), heating or irradiating a portion of the roughened portion of the surface of the substrate to which the catalyst deactivator has been applied (step S5), applying an electroless plating catalyst to the surface of the substrate (step S6), and contacting the surface of the substrate with an electroless plating solution (step S7). Each step will be described in detail below.

[0048] <Preparation of molded body> A molded body of a ceramic composition is prepared (step S1), which will become the substrate 11 (FIG. 1) after firing. The molded body of the ceramic composition can be manufactured by a conventional method. For example, the ceramic composition is a mixture of ceramic powder, which will be the component of the substrate 11, and a binder. For example, the organic binder described in Japanese Patent Publication No. 7-11012 can be used as the binder. After heating and kneading this ceramic composition, the molded body of the ceramic composition can be manufactured by molding it into a predetermined shape using injection molding or the like.

[0049] <Roughening of molded body> At least a portion of the surface of the molded body is roughened (step S2). The portion roughened in this step becomes the roughened portion 11A of the substrate 11 (FIG. 1). The surface of the molded body can be roughened by various methods, such as laser drawing, blasting methods such as sandblasting, stamping, and chemical etching.

[0050] In the step of roughening the surface of the molded body (step S1), the entire surface of the molded body may be roughened. Alternatively, the substrate 11 (FIG. 1) preferably has non-roughened portions 11B, which have a surface roughness less than that of the roughened portions 11A, on the surface of the region between adjacent plating films 12. Therefore, in the step of roughening the surface of the molded body (step S2), it is preferable to roughen only predetermined portions of the surface of the molded body. In this case, it is preferable to use laser drawing, blasting, and stamping methods, as these methods facilitate partial roughening. Among these, laser drawing is particularly preferable, as it facilitates the formation of fine patterns.

[0051] Referring to FIG. 7, an example of a method for forming a roughened portion 11A having a plurality of recesses 11a by a laser drawing method will be described. First, discontinuous lines L1 extending in a predetermined direction (the Y direction shown in FIG. 7) are drawn. The discontinuous lines L1 are a pattern in which line segments (laser-drawn portions) of length N1 are arranged at intervals (spaces) of length N2. Next, a pattern similar to line L1 is laser-drawn as discontinuous lines L2 by shifting the line L1 in a direction perpendicular to the predetermined direction (the X direction shown in FIG. 7) by a length N3 in parallel and then shifting the line L1 in the Y direction by a length N4 in parallel. In this case, N4 = (N1 + N2) / 2. By repeating the same process, a plurality of discontinuous lines Ln extending in the Y direction are drawn at equal intervals (length N3) in the X direction. As a result, a laser-drawn pattern can be formed in which line segments (laser-drawn portions) of length N1 are arranged at a pitch of length (N1 + N2) in the X direction and at a pitch of length 2 × N3 in the Y direction, as shown in FIG. 7. The laser light is only irradiated onto the line segment of length N1, but since the laser light has a width called the spot diameter, the periphery of the drawn pattern line is also cut. When the line length N1 is short, the spread of the width due to the spot diameter and the cutting depth are almost the same, and the laser processing marks become conical recesses 11a. If the diameter of the recesses 11a formed by cutting and spreading from the laser irradiation area of ​​length N1 is W, the interval P is given by P=√[(N3) 2 +(N4) 2]-W. By changing the values ​​of lengths N1 to N4, patterns of recesses 11a of various sizes can be created. Furthermore, by using such laser drawing, recesses 11a can be easily formed in a scattered manner with a uniform density in roughened portion 11A. As a method for forming a plurality of recesses 11a with laser light, in addition to making the drawing pattern discontinuous, a method of irradiating laser light in pulses can also be used.

[0052] <Firing of the molded body> The compact is fired (step S3). Firing can be performed according to a conventional method. For example, the compact is held at a debinding temperature of 150 to 500°C for a predetermined time, and then held at a firing temperature of 600 to 2500°C for a predetermined time. This results in a sintered ceramic body. This sintered ceramic body corresponds to the substrate 11 of the ceramic structure 10 (FIG. 1). In the following description, this sintered ceramic body will be referred to as the "substrate."

[0053] <Addition of catalyst deactivator> A catalyst deactivator is applied to the surface of the substrate (Step S4). Any substance can be used as the catalyst deactivator, as long as it prevents the electroless plating catalyst from exerting its catalytic activity and, as a result, inhibits the electroless plating reaction. It is believed that the catalyst deactivator either reacts directly with the electroless plating catalyst to poison it, or prevents the electroless plating catalyst from exerting its catalytic activity without directly reacting with it. Examples of such catalyst deactivators include heavy metals and their compounds that poison plating catalysts, such as zinc (Zn), lead (Pb), tin (Sn), bismuth (Bi), and antimony (Sb); iodine and its compounds; and oxidizing agents such as peroxides. Among these, zinc (Zn), lead (Pb), tin (Sn), bismuth (Bi), antimony (Sb), and their compounds are preferred due to their strong toxicity to the electroless plating catalyst, while iodine is preferred due to its high permeability into the substrate. These catalyst deactivators can be applied to the substrate, for example, by the methods disclosed in WO 2016 / 013464. It is believed that these catalyst deactivators applied to the substrate either penetrate into the substrate or are strongly adsorbed thereto.

[0054] Alternatively, the catalyst deactivator may be applied to the surface of the substrate by forming a catalytic activity interference layer (hereinafter simply referred to as "interference layer") containing the catalyst deactivator on the surface of the substrate. For example, an interference layer containing the catalyst deactivator such as iodine described above and a resin that serves as a binder is formed. By using a resin that serves as a binder, the catalyst deactivator can be retained even on the surface of the substrate, where direct adsorption or penetration of the catalyst deactivator is difficult.

[0055] Alternatively, a resin that interferes with catalytic activity may be used as the catalyst deactivator. The resin catalyst deactivator can be applied to the substrate as an interference layer. A polymer having an amide group and a dithiocarbamate group on the side chain is preferred as the resin catalyst deactivator. It is presumed that the amide group and the dithiocarbamate group on the side chain act on the metal ions that serve as electroless plating catalysts, preventing them from exhibiting catalytic activity. Dendritic polymers such as dendrimers and hyperbranched polymers are also preferred as the resin catalyst deactivator. Examples of resins that interfere with catalytic activity include polymers disclosed in International Publication No. 2017 / 154470 or International Publication No. 2018 / 131492. A interference layer can be formed on the surface of a molded article using the method disclosed in the publication.

[0056] As the dendritic polymer, for example, a hyperbranched polymer disclosed in WO 2017 / 154470 or WO 2018 / 131492, which is represented by the following formula (1) and has a weight-average molecular weight of 1,000 to 1,000,000, is preferred.

[0057] [ka] In formula (1), A 1 is a group containing an aromatic ring, and A 2 is a group containing an amide group, and A 3 is a sulfur-containing group, and R 0 represents hydrogen or a substituted or unsubstituted hydrocarbon group having 1 to 10 carbon atoms, m1 is 0.4 to 11, and n1 is 5 to 3,500.

[0058] <Heating or light irradiation> Next, a portion of the roughened portion of the surface of the substrate to which the electroless plating-inhibiting composition has been applied is heated or irradiated with light (step S5). The method of irradiating with light is not particularly limited, and examples include a method in which laser light is irradiated onto the surface of the substrate according to a predetermined pattern (laser drawing method) and a method in which light is irradiated onto the entire surface of the substrate after masking the portion not to be irradiated with light. It is presumed that by irradiating light onto a portion of the roughened portion of the surface of the substrate, the light is converted into heat, and the surface of the substrate is heated. Another method for heating the surface of the substrate without irradiating it with light includes a method in which the surface of the substrate is directly heat-pressed with a simple mold or the like on which a pattern of protrusions is formed. Heating the substrate by laser drawing is preferred because of its ease of operation, excellent selectivity of the heated portion, and ease of changing and miniaturizing the pattern.

[0059] The laser light can be irradiated using a laser device such as a UV laser, CO2 laser, YVO4 laser, or YAG laser, and these laser devices can be appropriately selected depending on the type of catalyst deactivator.

[0060] The catalyst deactivator is removed from a portion of the surface (heated portion) of the substrate that has been heated or irradiated with light. Here, "removal of catalyst deactivator" means, for example, that the catalyst deactivator in the heated portion disappears due to evaporation or combustion. By laser-drawing a predetermined pattern on the surface of the substrate to which the catalyst deactivator has been applied, it is possible to form a predetermined pattern of catalyst deactivator-removed portion and a catalyst deactivator-remaining portion where the catalyst deactivator remains. In the heated portion, the catalyst deactivator-removed portion may also disappear due to evaporation or combustion along with the catalyst deactivator. Furthermore, "removal of catalyst deactivator" includes not only the complete disappearance of the catalyst deactivator, but also the case where the catalyst deactivator remains to an extent that does not affect the progress of the subsequent electroless plating process. Even if the catalyst deactivator remains, if it does not affect the subsequent electroless plating process, it means that its effect of interfering with the catalytic activity of the electroless plating catalyst has disappeared. Furthermore, in this embodiment, "removal of catalyst deactivator" also includes the case where the heated portion of the catalyst deactivator is denatured or altered so that it no longer functions as a catalyst deactivator. For example, if the catalyst activity inhibitor is an amide group / amino group-containing polymer, the amide group and / or amino group may be denatured or altered, resulting in the amide group / amino group-containing polymer being unable to trap the electroless plating catalyst. In this case, the heated portion of the catalyst deactivator does not completely disappear, but a denatured substance (altered substance) remains. This denatured substance does not interfere with catalytic activity. Therefore, the denatured or altered portion of the catalyst deactivator acts similarly to the removed portion where the catalyst deactivator has disappeared.

[0061] <Adding electroless plating catalyst> Next, an electroless plating catalyst is applied to the heated or light-irradiated surface of the substrate (step S6). The method for applying the electroless plating catalyst to the surface of the substrate is not particularly limited. For example, the electroless plating catalyst may be applied to the substrate by a general-purpose method such as a sensitizer-activator method or a catalyst-accelerator method. Alternatively, the electroless plating catalyst may be applied to the surface of the substrate using a plating catalyst solution containing a metal salt such as palladium chloride, as disclosed in Japanese Patent Laid-Open Publication No. 2017-036486. Note that a commercially available activator treatment solution may also be used as the plating catalyst solution containing a metal salt.

[0062] <Formation of electroless plating film> Next, the surface of the substrate is contacted with an electroless plating solution (Step S7). The substrate surface contains catalyst deactivator remaining portions where the catalyst deactivator remains, and catalyst deactivator removed portions in a predetermined pattern where the catalyst deactivator has been removed by heating or the like. By applying an electroless plating catalyst to the substrate surface and contacting it with an electroless plating solution, an electroless plating film can be formed only in the catalyst deactivator removed portions in the predetermined pattern.

[0063] As the electroless plating solution, any general-purpose electroless plating solution can be used depending on the purpose, but electroless copper-nickel plating solution, electroless nickel-phosphorus plating solution, electroless copper plating solution, and electroless nickel plating solution are preferred because they have high catalytic activity and are stable solutions.

[0064] A different type of electroless plating film may be further formed on the electroless plating film, or an electrolytic plating film may be formed by electroplating. Increasing the total thickness of the plating film on the substrate can reduce electrical resistance when the plating film of a predetermined pattern is used as an electrical circuit. From the viewpoint of reducing the electrical resistance of the plating film, the plating film laminated on the electroless plating film is preferably an electroless copper plating film, an electrolytic copper plating film, an electrolytic nickel plating film, or the like. Furthermore, since electrolytic plating cannot be performed on electrically isolated circuits, in such cases, it is preferable to increase the total thickness of the plating film on the substrate by electroless plating. Furthermore, to improve the solder wettability of the plating film pattern so that it can be used for solder reflow, a plating film of tin, gold, silver, or the like may be formed on the outermost surface of the plating film pattern.

[0065] Through the above steps, the ceramic structure 10 (FIG. 1) is manufactured.

[0066] In the above-described manufacturing method, a step (step S2) of roughening at least a portion of the surface is carried out before the step (step S3) of firing the molded body. In this method, the molded body is roughened before it has been hardened by firing, so roughening can be easily performed. Alternatively, for example, surface roughening may be performed in addition to the step (step S5) of heating or irradiating with light. In this case, the surface roughening is performed after the step (step S3) of firing the molded body. The molded body that has been hardened by firing is roughened, and the surface can be roughened by, for example, prolonged irradiation using a high-power laser.

[0067] According to the above-described manufacturing method, roughening can be performed before the firing step (step S3), so that the roughened portion can be easily formed, thereby achieving both adhesion and selectivity of the electroless plating film.

[0068] In the heating or light irradiation step (step S5), the heated or light irradiated portion is also roughened to some extent. Therefore, of roughened portion 11A of substrate 11 (FIG. 3), the heated or light irradiated portion (i.e., portion 11A1 where the catalyst deactivator is removed and electroless plating film 121 is formed) has a larger surface roughness Ra than the non-heated or non-light irradiated portion (i.e., portion 11A2 where the catalyst deactivator remains and electroless plating film 121 is not formed).

[0069] Because electroless plating is more likely to deposit in roughened portion 11A (FIG. 1), unintended plating deposition may occur between adjacent patterns (plating films 12), resulting in the adjacent patterns being connected together. Therefore, it is preferable that substrate 11 has a portion (non-roughened portion 11B) on the surface between adjacent plating films 12 that has a smaller surface roughness than roughened portion 11A. That is, in the step of roughening at least a portion of the surface (step S2), it is preferable to roughen only a predetermined portion of the surface of the molded body, rather than roughening the entire surface of the molded body.

[0070] When multiple recesses 11a are formed in roughened portion 11A, the smaller the ratio W / D (the diameter W of recesses 11a to the depth D of recesses 11a), the greater the anchoring effect and the stronger the adhesion between electroless plating film 121 and substrate 11. On the other hand, if ratio W / D is too small, the selectivity of electroless plating film 121 deteriorates. This is presumably because, if ratio W / D is too small, the catalyst deactivator cannot penetrate deep into recesses 11a, causing partial deposition of the electroless plating film, which then grows from these points and connects to the surrounding area. If ratio W / D is within the range of 0.5 to 3.0, ceramic structure 10 with an excellent balance between adhesion and selectivity can be obtained.

[0071] The ceramic structure 10 according to one embodiment of the present invention and an example of a method for manufacturing the same have been described above. According to this embodiment, a ceramic structure having excellent adhesion between the substrate 11 and the electroless plating film 121 can be obtained.

[0072] The above describes in detail the case where multiple recesses 11a are formed in roughened portion 11A. In this case, the balance between adhesion and selectivity can be easily adjusted by adjusting the ratio W / D. Therefore, it is preferable that multiple recesses 11a are formed in roughened portion 11A. However, roughened portion 11A only needs to have a predetermined surface roughness, and multiple recesses 11a do not have to be formed in roughened portion 11A.

[0073] In the above description, the substrate 11 has a portion (non-roughened portion 11B) on the surface between adjacent plating films 12 that has a surface roughness less than that of the roughened portion 11A. In this case, adjacent plating films 12 can be more reliably prevented from joining together. However, as long as adjacent plating films 12 do not join together, the substrate 11 does not need to have the non-roughened portion 11B. For example, the entire surface of the substrate 11 may be roughened.

[0074] In the above description, the plating film 12 includes the electroless plating film 121 and the second plating film 122. However, the plating film 12 only needs to include the electroless plating film 121, and may not include the second plating film 122, or may include another plating film in addition to the second plating film 122. Furthermore, in addition to or instead of the second plating film 122, the plating film 12 may include a film other than a plating film. [Example]

[0075] The present invention will be described in more detail below with reference to examples, but the present invention is not limited to these examples.

[0076] [Example 1] A molding composition consisting of 100.0 parts by weight of alumina powder, 12.8 parts by weight of aminated polyethylene glycol, and 8.5 parts by weight of acetal copolymer was mixed in a pressure kneader for approximately 60 minutes, starting at 200°C and gradually lowering the temperature to 180°C after mixing began. This mixture was injection molded using a mold (50 mm x 50 mm x 2 mm) to produce a molded product.

[0077] This molded body was laser-drawn using a laser lithography system (Keyence, MD-U1000, UV laser, wavelength 355 nm) to form three different roughened areas. The resulting patterns are shown in Figure 8. Figure 8(a) shows a 0.33 mm-wide, 0.27 mm-wide non-printed area. Figure 8(b) shows a 0.24 mm-wide, 0.16 mm-wide non-printed area. Figure 8(c) shows a rectangular area with sides of 2.40 mm. The laser-drawn area is the roughened area. For each pattern, a pattern consisting of discontinuous lines (see Figure 7) was laser-drawn (power 80%, linear velocity 25 mm / s, frequency 40 kHz, drawing count 1 time) within the printed area, forming multiple recesses. The sizes of the laser-drawn patterns were N1 = 10 μm, N2 = 90 μm, N3 = 50 μm, and N4 = 50 μm.

[0078] The laser-drawn molded body was fired at 1250°C for 1 hour to form a substrate. The substrate had a roughened area corresponding to the laser-drawn area, and multiple recesses were formed in the roughened area.

[0079] The diameter W and depth D of the recesses were measured using a laser microscope (Keyence Laser Microscope VK-9700, 20x objective lens). Regarding the depth D, the depth distribution of one recess was calculated, and the range with the largest depth value, less than 1% of cumulative frequency, was ignored as optical noise. The depth value with a cumulative frequency of 1% was calculated as the depth D of that recess. Regarding the diameter W, the area of ​​the opening of one recess was calculated, and the diameter of the opening, assuming its shape as a perfect circle, was calculated as the diameter W of that recess. The diameter W and depth D of each recess within the measurement field of view were determined using the same method, and the average values ​​of these diameters W and depths D were then calculated.

[0080] The depth D of the recess calculated as described above was 30 μm, the diameter W was 60 μm, and the ratio W / D of the diameter W to the depth D was 2.0.

[0081] Before applying the catalyst deactivator to the substrate, the following pretreatment was performed to form a primer layer. 0.5 ml of silane coupling agent KBM-4803 (Shin-Etsu Silicone Co., Ltd.) was added to 100 ml of ethanol, followed by 0.5 ml of acetic acid (Fujifilm Wako Pure Chemical Industries, Ltd.) while stirring. 100 ml of water was then added and stirred for 3 hours to prepare the primer layer coating. The substrate was dipped into this primer layer coating at room temperature for 5 seconds, and then dried in a 100°C dryer for 20 minutes.

[0082] Next, a catalyst deactivator (a hyperbranched polymer with an amide group inserted) was dissolved in methyl ethyl ketone to prepare a polymer solution with a polymer concentration of 0.5 wt%. The substrate was dipped in the polymer solution at room temperature for 5 seconds, and then dried in a 100°C dryer for 10 minutes. This formed a catalytic activity-blocking layer containing the catalyst deactivator on the surface of the substrate.

[0083] Laser writing (output: 80%, linear velocity: 1000 mm / s, frequency: 40 kHz, writing count: 1) was performed on the substrate with the catalytic activity-blocking layer formed using a laser writing device (Keyence, MD-U1000, UV laser, wavelength: 355 nm). The writing pattern is shown in Figure 9. This writing pattern is almost identical to the writing pattern shown in Figure 8, but the ratio of the written area to the non-written area was changed. Specifically, in Figure 9(a), the width of the written area was 0.30 mm, and the width of the non-written area was 0.30 mm. In Figure 9(b), the width of the written area was 0.20 mm, and the width of the non-written area was 0.20 mm. In Figure 9(c), the written area was a rectangle with sides of 2.00 mm. For all writing patterns, solid writing was performed within the written area at 0.02 mm intervals using the embedded drawing setting in the drawing software.

[0084] After laser writing, the substrate was subjected to electroless plating and then electroless plating. First, the substrate was immersed in a pretreatment solution (CLEANER CONDITIONER 231 (Rohm and Haas Electronic Materials Co., Ltd.)) at 30°C for 2 minutes. The substrate was then removed from the pretreatment solution and washed by immersion in room temperature water for a few seconds. This washing was then repeated once more.

[0085] To apply the palladium catalyst, an aqueous palladium chloride solution was prepared. 0.2 g of palladium chloride was dissolved in 1 mL of 12 N hydrochloric acid and then diluted with water to 1 L to prepare an aqueous palladium chloride solution with a blending amount of 0.2 g / L. The substrate was immersed in the aqueous palladium chloride solution adjusted to 30°C for 1 minute. The substrate was then removed from the aqueous palladium chloride solution and washed by immersing it in water at room temperature for a few seconds. The same washing was repeated once more.

[0086] To reduce palladium, an aqueous solution of sodium hypophosphite was prepared. 15 g of sodium hypophosphite was added to 1 L of water and stirred to dissolve. This aqueous solution of sodium hypophosphite was heated to 50°C, and the substrate was immersed in it for 1 minute.

[0087] The substrate was then immersed in a 65°C nickel plating solution (ICP Nicoron LTN, manufactured by Okuno Pure Chemical Industries, Ltd.) for 5 minutes without being washed, to deposit an electroless nickel plating film on the surface. After removing the substrate from the nickel plating solution, it was immersed in room temperature water for a few seconds and washed. The same washing was performed once more.

[0088] Furthermore, the substrate was immersed in a copper plating solution (OPC Copper NCA manufactured by Okuno Pure Chemical Industries, Ltd.) at 60°C for 30 minutes to deposit a copper plating film on the surface. After removing the substrate from the copper plating solution, it was immersed in room temperature water for a few seconds to wash. After repeating the same washing once more, it was air-dried. A ceramic structure was manufactured by the above process.

[0089] The ceramic structures fabricated using the patterns of Figures 8(a) and 9(a) had an electroless plating film width W1 of 0.30 mm and a roughened portion width W2 of 0.33 mm. The ceramic structures fabricated using the patterns of Figures 8(b) and 9(b) had an electroless plating film width W1 of 0.20 mm and a roughened portion width W2 of 0.24 mm. The ceramic structures fabricated using the patterns of Figures 8(c) and 9(c) had an electroless plating film width W1 of 2.00 mm and a roughened portion width W2 of 2.40 mm. In both cases, the electroless plating film width W1 was narrower than the roughened portion width W2.

[0090] The surface roughness Ra was measured using a Keyence VK-9710 laser microscope. To measure the surface roughness of the area where the plating film was formed, the ceramic structure was immersed in nitric acid for 5 minutes and then washed with water three times to remove the plating film.

[0091] The surface roughness Ra was calculated for both the surface roughness including recesses Ra and the surface roughness Ra excluding recesses. The surface roughness Ra excluding recesses was calculated from the profile curve obtained by applying a high-pass filter with a cutoff value λc set to 100 μm. The surface roughness Ra including recesses is shown in Table 1, and the surface roughness Ra excluding recesses is shown in Table 2.

[0092] [Table 1]

[0093] [Table 2]

[0094] [Comparative Example 1] After injection molding, a ceramic structure was produced in the same manner as in Example 1, except that roughening by laser drawing with a laser marker was not performed.

[0095] [Precipitability and selectivity] The deposition and selectivity of the electroless plating film were evaluated. Specifically, observations were made on (1) the area where the electroless plating film should be formed (line area) and (2) the area where the electroless plating film should not be formed. If the electroless plating film was formed on 80% or more of the area of ​​the line area, the deposition was evaluated as "good," and if it was less than 80%, the deposition was evaluated as "poor."

[0096] For selectivity, the areas where electroless plating film should not be formed (2) were further divided into (2-1) the areas between the lines (between the fine lines) and (2-2) the areas other than (2-1) and evaluated. For (2-1) the areas between the fine lines, if the plating film between the fine lines was connected due to deposition between the fine lines, it was rated "fail." If there was deposition but the fine lines were not connected, it was rated "pass." If there was no deposition between the fine lines, it was rated "good." For (2-2) the areas not included in (2-1), if the electroless plating film was formed on 20% or more of the area of ​​the area not included in (2-1), it was rated "fail." If it was less than 20%, it was rated "good." (1) and (2-2) were observed visually, and (2-1) was observed using a Keyence VHX-6000 microscope.

[0097] [Adhesion] A pattern (5 mm × 3.7 cm) for adhesion testing was prepared under the same conditions as in Example 1 and Comparative Example 1, and a film was formed to a thickness of approximately 10 μm using electrolytic copper plating. Specifically, laser writing was performed on a 5.4 mm × 3.7 cm area to form a roughened portion, and a plating film was formed over the entire 5 mm × 3.7 cm area in the width direction center. In the Comparative Example, a plating film was formed without forming a roughened portion. The laser writing conditions were the same as in Example 1. This sample was subjected to a peel test using a tensile tester (Shimadzu Corporation AGS-J) to evaluate adhesion. Specifically, a notch was made in the sample, and it was pulled using a jig that maintained a 90° angle during peeling. The average load (N / cm) per unit width of the peeled area was taken as adhesion. If the adhesion was 3 N / cm or greater, adhesion was evaluated as "good," and if the adhesion was less than 3 N / cm, adhesion was evaluated as "poor."

[0098] The results are shown in Table 3. The "overall evaluation" was given as "good" when all of the deposition properties, selectivity, and adhesion were "good," and as "bad" when any of them were "bad."

[0099] [Table 3]

[0100] As shown in Table 3, the ceramic structure of Example 1 had excellent adhesion and an excellent balance between deposition properties and selectivity. The ceramic structure of Comparative Example 1 had good deposition properties and selectivity, but poor adhesion.

[0101] Although the embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and various modifications are possible within the scope of the invention. [Explanation of symbols]

[0102] 10. Ceramic Structure 11 Base material 11A Roughened part 11B Non-roughened area 11a Recess 12 Plating film 121 Electroless plating film 122 Second plating film

Claims

1. a ceramic substrate having a roughened portion on at least a portion of its surface; an electroless plating film formed on the roughened portion of the base material, a width W1 of the electroless plating film is smaller than a dimension W2 of the roughened portion along the width direction of the electroless plating film, The ceramic structure has a surface of the substrate in a region between adjacent electroless plating films, the surface having a portion with a smaller surface roughness than the roughened portion.

2. 2. The ceramic structure according to claim 1, wherein the surface roughness of the roughened portion on which the electroless plating film is formed is greater than the surface roughness of the roughened portion on which the electroless plating film is not formed.

3. a plurality of recesses are formed in the roughened portion; 3. The ceramic structure according to claim 1, wherein a ratio W / D of a diameter W of said recess to a depth D of said recess is 0.5 to 4.

0.

4. 4. The ceramic structure according to claim 3, wherein the diameter W of the plurality of recesses is 3 to 100 μm.

5. 5. The ceramic structure according to claim 1, wherein a difference W2-W1 between a dimension W2 of the roughened portion along the width direction of the electroless plating film and a width W1 of the electroless plating film is 1 μm to 1.0 mm.

6. 6. The ceramic structure according to claim 1, wherein a ratio W2 / W1 of a dimension W2 of the roughened portion along the width direction of the electroless plating film to a width W1 of the electroless plating film is 1.1 to 2.

0.

7. 7. The ceramic structure according to claim 1, wherein the adhesion of the electroless plating film to the substrate is 3 N / cm or more.

8. A method for producing the ceramic structure according to any one of claims 1 to 7, comprising the steps of: providing a ceramic composition compact; Roughening at least a portion of the surface of the molded body; sintering the compact to form the substrate; applying a catalyst deactivator to the surface of the substrate; a step of heating or irradiating a part of the roughened portion of the surface of the base material to which the catalyst deactivator has been applied; applying an electroless plating catalyst to the surface of the substrate that has been heated or irradiated with light; and a step of contacting the surface of the molded body to which the electroless plating catalyst has been applied with an electroless plating solution to form the electroless plating film on heated or light-irradiated portions of the surface.

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