Plasma processing apparatus and method of using the plasma processing apparatus

Abstract

To control an electron density distribution and a radical density distribution in a chamber.SOLUTION: A plasma processing apparatus 10 disclosed includes a chamber 11, a stage 12, a dielectric member 13, a cover 14, a gas introduction path 15, and an induction coil 16. The induction coil 16 includes a first induction coil 17 installed so as to overlap a central region R1 of the dielectric member 13, and a second induction coil 18 installed so as to overlap a peripheral region R2 outside the central region R1 of the dielectric member 13. The cover 14 has a first gas hole 14c formed at a position overlapping the central region R1 of the dielectric member 13, and a second gas hole 14d formed at a position overlapping the peripheral region R2 of the dielectric member 13. The gas introduction path 15 has a first gas introduction path 15a communicating with the first gas hole 14c and a second gas introduction path 15b communicating with the second gas hole 14d.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a plasma processing apparatus and a method of using the plasma processing apparatus. [Background technology]

[0002] Conventionally, plasma processing apparatuses for plasma processing of workpieces are known (for example, Patent Document 1). The plasma processing apparatus of Patent Document 1 includes a chamber having an opening at the top, a stage disposed within the chamber on which the workpiece is placed, a dielectric member for closing the opening, a gas inlet for introducing a source gas into the chamber, and an induction coil for generating plasma containing the source gas within the chamber. The induction coil includes a first induction coil disposed in the center and a second induction coil disposed on the outer periphery. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2013-012761 Summary of the Invention [Problem to be solved by the invention]

[0004] However, the plasma processing apparatus of Patent Document 1 has room for improvement in terms of the uniformity of the etching rate of the workpiece (the rate at which the surface of the workpiece is plasma etched). Controlling the electron density distribution and radical density distribution within the chamber is effective for uniforming the etching rate. In this situation, one of the objectives of the present disclosure is to control the electron density distribution and radical density distribution within the chamber. [Means for solving the problem]

[0005] One aspect of the present disclosure relates to a plasma processing apparatus including a chamber having an opening at an upper portion, a stage disposed within the chamber and on which a workpiece is placed, a dielectric member covering the opening, a cover disposed within the chamber to cover the dielectric member, a gas inlet path formed between the dielectric member and the cover and through which a source gas is introduced, and an induction coil disposed above the dielectric member and configured to generate plasma containing the source gas in the chamber when high-frequency power is applied thereto, the induction coil including a first induction coil disposed to overlap a central region of the dielectric member and a second induction coil disposed to overlap a peripheral region outside the central region of the dielectric member, the cover including a first gas hole formed at a position overlapping the central region of the dielectric member and a second gas hole formed at a position overlapping the peripheral region of the dielectric member, the gas inlet path including a first gas inlet path communicating with the first gas hole and a second gas inlet path communicating with the second gas hole.

[0006] Another aspect of the present disclosure relates to a method for using a plasma processing apparatus including a chamber having an opening at an upper portion, a stage disposed in the chamber and on which a workpiece is placed, a dielectric member closing the opening, a cover disposed in the chamber so as to cover the dielectric member, a gas introduction path formed between the dielectric member and the cover, and an induction coil disposed above the dielectric member, the induction coil including a first induction coil disposed so as to overlap a central region of the dielectric member, and a second induction coil disposed so as to overlap a peripheral region outside the central region of the dielectric member. a first gas hole formed in the cover at a position overlapping with the central region of the dielectric member and a second gas hole formed in the cover at a position overlapping with the peripheral region of the dielectric member, and the gas inlet path has a first gas inlet path communicating with the first gas hole and a second gas inlet path communicating with the second gas hole, wherein a raw material gas is introduced into the first and second gas inlet paths and high frequency power is applied to the first and second induction coils, thereby generating plasma containing the raw material gas in the chamber. [Effects of the Invention]

[0007] According to the present disclosure, it is possible to control the electron density distribution and the radical density distribution in the chamber. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a cross-sectional view schematically showing a plasma processing apparatus according to a first embodiment. [Figure 2] FIG. 2 is a plan view schematically showing the cover of the first embodiment. [Figure 3] FIG. 10 is a cross-sectional view schematically showing a plasma processing apparatus according to a second embodiment. [Figure 4] FIG. 10 is a plan view schematically showing a part of each induction coil of the second embodiment. [Figure 5] FIG. 10 is a cross-sectional view schematically showing a plasma processing apparatus according to a third embodiment. [Figure 6]10A and 10B are diagrams showing an example of simulation results of magnetic flux density, where (a) shows the simulation results when the first distance is greater than the second distance, and (b) shows the simulation results when the first distance and the second distance are the same. [Figure 7] 10A and 10B show an example of a simulation result of gas flow, where (a) shows the simulation result when gas is supplied from the first gas hole and the second gas hole, and (b) shows the simulation result when gas is supplied from only the second gas hole. DETAILED DESCRIPTION OF THE INVENTION

[0009] The following describes an example of a plasma processing apparatus and a method of using the plasma processing apparatus according to the present disclosure. However, the present disclosure is not limited to the example described below. While the following description may use specific numerical values ​​and materials, other numerical values ​​and materials may be used as long as the effects of the present disclosure are obtained.

[0010] (Plasma processing equipment) The plasma processing apparatus according to the present disclosure is an apparatus for plasma processing of a workpiece. The plasma processing apparatus may be, for example, a plasma etching apparatus, a plasma dicer, a plasma ashing apparatus, or a plasma CVD apparatus. The plasma processing apparatus includes a chamber, a stage, a dielectric member, a cover, a gas introduction passage, and an induction coil.

[0011] The chamber has an opening at the top. The chamber may be formed in a hollow cylindrical shape. The opening may be open upward.

[0012] The stage is disposed within the chamber, and the workpiece is placed thereon. The stage may have a horizontal mounting surface on which the workpiece is placed. The stage may have a flow path through which a coolant flows to cool the workpiece during plasma processing. The stage may have an electrostatic chucking mechanism for attracting the workpiece. The stage may have a lower electrode to which high-frequency power is applied. The workpiece may be, for example, a semiconductor substrate to be singulated by plasma etching. The semiconductor substrate has a plurality of element regions and division regions that define the element regions. The element regions include, for example, a semiconductor layer and a wiring layer. Element chips having the semiconductor layer and the wiring layer are obtained by etching the division regions. The workpiece may be placed on the stage while supported by a carrier. The carrier may be, for example, a resin sheet held at its outer periphery by a frame.

[0013] The dielectric member closes the opening of the chamber. The dielectric member may be formed in a plate shape having a horizontally extending region. The dielectric member may be made of ceramics such as quartz, alumina, or aluminum nitride. The dielectric member may be made mainly of quartz.

[0014] The cover is disposed within the chamber to cover the dielectric member. The cover has a first gas hole formed at a position overlapping the central region of the dielectric member and a second gas hole formed at a position overlapping the peripheral region outside the central region of the dielectric member. The central region may be defined as a circular region including the center of the dielectric member. The peripheral region may be defined as a first annular region surrounding the circular central region. When the diameter of the circular central region is d1, the outer diameter d2 of the first annular region may be at least two times or at least 2.5 times d1. A second annular region may be defined between the circular region and the first annular region, not facing either the first or second gas hole. The first and second gas holes may penetrate the cover in the thickness direction. The first and second gas holes may each be connected to a space in the chamber where the stage is disposed. A plurality of first and second gas holes may each be provided. The cover may be made of ceramics such as quartz, alumina, aluminum nitride, silicon nitride, etc. The cover may be made mainly of aluminum nitride or quartz.

[0015] The gas inlet path is formed between the dielectric member and the cover, and the source gas is introduced through the gas inlet path. The gas inlet path has a first gas inlet path communicating with the first gas hole and a second gas inlet path communicating with the second gas hole. The first and second gas inlet paths may each be formed by a groove formed in the cover. The source gas introduced into the first gas inlet path is introduced into the chamber via the first gas hole. The source gas introduced into the second gas inlet path is introduced into the chamber via the second gas hole.

[0016] The induction coil is disposed above the dielectric member and generates plasma containing the source gas within the chamber when high-frequency power is applied. The induction coil includes a first induction coil disposed so as to overlap the central region of the dielectric member and a second induction coil disposed so as to overlap the peripheral region of the dielectric member. The magnetic field generated by the first induction coil primarily acts on the source gas introduced into the chamber through the first gas hole. The magnetic field generated by the second induction coil primarily acts on the source gas introduced into the chamber through the second gas hole. By adjusting the high-frequency power applied to the first induction coil and the flow rate of the source gas introduced through the first gas hole, as well as the high-frequency power applied to the second induction coil and the flow rate of the source gas introduced through the second gas hole, the electron density distribution and radical density distribution within the chamber can be flexibly controlled. Through such control, the electron density distribution and radical density distribution within the chamber can be controlled, resulting in uniform processing of the workpiece.

[0017] The first distance between the first gas hole and the first induction coil (e.g., the shortest vertical distance between them) may be different from the second distance between the second gas hole and the second induction coil (e.g., the shortest vertical distance between them). This configuration can suppress mutual interference between the magnetic field generated by the first induction coil and the magnetic field generated by the second induction coil. This increases the independent controllability of the first induction coil and the second induction coil. This further increases the controllability of the electron density distribution and the radical density distribution in the chamber. The first distance may be greater or smaller than the second distance, but is preferably greater than the second distance in order to increase the controllability of the electron density distribution and the radical density distribution.

[0018] The reason for this is as follows. To precisely control the electron density distribution and radical density distribution in the chamber, it is preferable that the resolution of the first induction coil (i.e., the plasma generation capacity of the first induction coil per unit power applied to the first induction coil) and the resolution of the second induction coil (i.e., the plasma generation capacity of the second induction coil per unit power applied to the second induction coil) be approximately the same. Here, the first induction coil has a smaller acting area and a shorter coil length than the second induction coil. In this case, the first induction coil has a higher magnetic field generation efficiency per unit power when high-frequency power is applied than the second induction coil. The magnetic fields of the first induction coil and the second induction coil each act on the source gas in the chamber to generate plasma. Because the magnetic field weakens with increasing distance from the coil, making the first distance greater than the second distance reduces the contribution of the magnetic field of the first induction coil to plasma generation. Therefore, by making the first distance greater than the second distance, not only can mutual interference between the coils be suppressed, but the plasma generation capacity (resolution) of the first induction coil per unit power can be made to be approximately the same as that of the second induction coil, making it possible to precisely control the electron density distribution and radical density distribution.

[0019] Figures 6(a) and 6(b) show examples of simulation results for magnetic flux density. Figure 6(a) shows the simulation results for the magnetic flux density distribution when the first distance is greater than the second distance. Figure 6(b) shows the simulation results for the magnetic flux density distribution when the first distance and the second distance are the same. Comparing Figures 6(a) and 6(b), it can be seen that the magnetic flux density distribution generated by the second induction coil spreads more toward the chamber in Figure 6(a) than in Figure 6(b), and that a magnetic flux density similar to that near the first gas hole is obtained near the second gas hole. This suggests that when the first distance is greater than the second distance, as in Figure 6(a), the controllability of the electron density distribution and the radical density distribution is improved.

[0020] The flow rate of the source gas introduced into the first gas inlet passage may be greater than the flow rate of the source gas introduced into the second gas inlet passage. This configuration facilitates a flow of the source gas from the center toward the periphery within the chamber. The workpiece is typically located in the central region of the chamber, and reaction products are generated near the workpiece during plasma processing. In other words, many reaction products that could interfere with plasma processing exist in the central region of the chamber. These reaction products are efficiently removed by the source gas flowing from the center toward the periphery within the chamber, as described above. Therefore, the plasma processing can be prevented from being interfered with by the reaction products.

[0021] The cover may have a convex portion on its lower surface between the first gas hole and the second gas hole. This configuration separates the area near the outlet of the first gas hole from the area near the outlet of the second gas hole. While electrons and radicals are generated in these areas during plasma processing, the diffusion of electrons and radicals between the separated areas is suppressed. This enhances the independent controllability of the first induction coil and the second induction coil, further enhancing the controllability of the electron density distribution and the radical density distribution within the chamber. The convex portion may extend along the circumferential direction of the chamber, and may be formed in a ring shape. The ring-shaped convex portion may be formed continuously or intermittently. The height of the convex portion is preferably uniform, but it may have an uneven shape. The convex portion may be provided so as to overlap a second annular region defined between the circular region and the first annular region and not facing either the first or second gas hole.

[0022] Although providing such a convex portion can cause turbulence in the gas flow below the convex portion, supplying source gas into the chamber from both the first and second gas holes can suppress this turbulence. Figures 7(a) and 7(b) show examples of gas flow simulation results. Figure 7(b) shows the simulation results of gas flow in a chamber with a convex portion when gas is supplied only through the second gas hole, without gas supply through the first gas hole. It can be seen that a portion of the gas supplied through the second gas hole flows from the periphery to the center on the stage surface, and then tends to flow upward near the center of the stage. On the other hand, Figure 7(a) shows the simulation results of gas flow in a chamber with a convex portion when gas is supplied through both the first and second gas holes. As seen in Figure 7(b), no gas flow from the periphery to the center on the stage surface or upward near the center of the stage is observed, confirming that gas flow turbulence is reduced. As shown in Figure 7(a), supplying gas from both the first and second gas holes in a chamber with a convex portion suggests that the gas exhaust characteristics, and therefore the processing speed and processing shape, can be improved, especially near the center of the stage.

[0023] The first gas inlet path and the second gas inlet path may be separated from each other. This configuration prevents the source gas in the first gas inlet path from entering the second gas inlet path, and vice versa. This facilitates control of the flow rates of the source gas in each of the first and second gas inlet paths. This allows for easy control of the amount of electrons and radicals generated in the central region of the chamber and the peripheral region therearound.

[0024] The plasma processing apparatus may further include a support column installed above the dielectric member and a metal cover supporting the support column and covering the first and second induction coils. The first induction coil may have a first end to which high-frequency power is applied and a second end connected to ground. The second end may be electrically connected to the metal cover via a conductive member supported by the support column, and the chamber may be electrically connected to the metal cover and grounded. The support column may be made of an insulator. The conductive member may be integral with or separate from the second induction coil. With this configuration, the second end of the first induction coil is grounded via the conductive member, the metal cover, and the chamber. The ground path does not pass near the second induction coil. Therefore, mutual interference between the first induction coil and the second induction coil can be suppressed. This increases the independent controllability of the first induction coil and the second induction coil, further improving the controllability of the electron density distribution and the radical density distribution in the chamber.

[0025] The second induction coil may be formed in a spiral shape extending along the circumferential direction of the chamber. The conductive member may be formed in a plate shape (e.g., a plate shape having a rectangular cross section) having a first main surface and a second main surface opposite the first main surface, and may be arranged so that the first and second main surfaces extend along the radial direction of the chamber. With this configuration, the magnetic field generated by the second induction coil hardly interlinks with the conductive member. Therefore, mutual interference between the first induction coil and the second induction coil can be suppressed. This increases the independent controllability of the first induction coil and the second induction coil, further improving the controllability of the electron density distribution and the radical density distribution in the chamber.

[0026] At least a portion of the second induction coil may be disposed in a recess formed in the upper surface of the dielectric member. With this configuration, at least a portion of the magnetic field generated by the second induction coil acts on the source gas introduced through the second gas inlet passage through the portion of the dielectric member where the recess is formed (i.e., the thin-walled portion). Therefore, the second induction coil can generate plasma containing the source gas with high efficiency.

[0027] (Method of using plasma processing device) A method of using the plasma processing apparatus according to the present disclosure is a method of using the above-described plasma processing apparatus, and includes the steps of generating plasma containing the source gas in the chamber by introducing a source gas into the first and second gas inlet passages and applying high-frequency power to the first and second induction coils. This method typically includes the steps of placing a workpiece on a stage and treating or etching the workpiece with the generated plasma. For example, the method may include the step of singulating a semiconductor substrate, which is the workpiece, by plasma etching. The plasma may be, for example, a plasma containing a fluorine-containing gas, but is not limited thereto. This method makes it possible to uniformize the electron density distribution and radical density distribution in the chamber.

[0028] The flow rate of the source gas introduced into the first gas inlet passage may be greater than the flow rate of the source gas introduced into the second gas inlet passage. This allows reaction products, which are generated in large amounts in the central region of the chamber, to be efficiently removed by the source gas flowing from the center to the outer periphery of the chamber. This prevents the reaction products from interfering with plasma processing.

[0029] The first gas inlet path and the second gas inlet path may be separated from each other. This prevents the source gas in the first gas inlet path from entering the second gas inlet path, and vice versa. This makes it easy to control the flow rates of the source gas in each of the first and second gas inlet paths. This makes it easy to control the amount of electrons and radicals generated in the central region of the chamber and the peripheral region therearound.

[0030] As described above, according to the present disclosure, the electron density distribution and radical density distribution in the chamber of the plasma processing apparatus can be made uniform.

[0031] An example of a plasma processing apparatus and a method for using the plasma processing apparatus according to the present disclosure will be described in detail below with reference to the drawings. The above-described components and steps can be applied to the components and steps of the example plasma processing apparatus and the method for using the plasma processing apparatus described below. The components and steps of the example plasma processing apparatus and the method for using the plasma processing apparatus described below can be modified based on the above description. Furthermore, the matters described below may be applied to the above-described embodiment. Among the components and steps of the example plasma processing apparatus and the method for using the plasma processing apparatus described below, components and steps that are not essential to the plasma processing apparatus and the method for using the plasma processing apparatus according to the present disclosure may be omitted. Note that the diagrams shown below are schematic and do not accurately reflect the shapes and numbers of actual components.

[0032] First Embodiment A first embodiment of the present disclosure will be described. A plasma processing apparatus 10 of this embodiment is an apparatus for plasma processing an object to be processed (e.g., a semiconductor substrate). The plasma processing apparatus 10 of this embodiment is a plasma dicer, but is not limited to this. As shown in FIGS. 1 and 2, the plasma processing apparatus 10 includes a chamber 11, a stage 12, a dielectric member 13, a cover 14, a gas introduction path 15, an induction coil 16, a first high-frequency power supply 21, a second high-frequency power supply 22, and a metal cover 25.

[0033] The chamber 11 has an opening 11a at the top. The chamber 11 is formed in a hollow cylindrical shape, but is not limited to this. The opening 11a opens upward. The chamber 11 is disposed on the outer periphery side of the stage 12 and has an exhaust port 11b for exhausting the raw material gas used in the plasma processing. An exhaust device (not shown) is connected to this exhaust port 11b. The chamber 11 is made of a conductive material (e.g., metal). The chamber 11 is grounded.

[0034] Stage 12 is disposed within chamber 11, and the workpiece is placed thereon. Stage 12 has a horizontal placement surface 12a on which the workpiece is placed. Stage 12 has a flow path (not shown) through which a coolant flows to cool the workpiece during plasma processing. Stage 12 has an electrostatic adsorption mechanism (not shown) for adsorbing the workpiece. Stage 12 has a lower electrode (not shown) to which high-frequency power is applied.

[0035] The dielectric member 13 closes the opening 11a of the chamber 11. The dielectric member 13 is formed in a plate shape having a horizontally extending region. The dielectric member 13 is made of quartz, but is not limited to this.

[0036] The cover 14 is installed in the chamber 11 to cover the dielectric member 13. The cover 14 covers the lower surface of the dielectric member 13. The cover 14 has a plurality of first gas holes 14c formed at a position overlapping the central region R1 of the dielectric member 13 and a plurality of second gas holes 14d formed at a position overlapping the peripheral region R2 of the dielectric member 13. The first gas holes 14c and the second gas holes 14d each penetrate the cover 14 in the thickness direction. The first gas holes 14c and the second gas holes 14d each communicate with the space in the chamber 11 where the stage 12 is disposed. The plurality of first gas holes 14c are spaced apart in the radial and circumferential directions. The plurality of second gas holes 14d are spaced apart in the radial and circumferential directions. The cover 14 is made of aluminum nitride, but is not limited to this.

[0037] The cover 14 has a first protrusion 14a on its underside between the first gas hole 14c and the second gas hole 14d. The cover 14 has a second protrusion 14b inside the first gas hole 14c. The first and second protrusions 14a, 14b are each formed in a ring shape, but are not limited to this. The first and second protrusions 14a, 14b are made of, for example, aluminum nitride. The first protrusion 14a is an example of a protrusion.

[0038] Gas inlet path 15 is formed between dielectric member 13 and cover 14, and a source gas is introduced through it. Gas inlet path 15 has first gas inlet path 15a communicating with first gas hole 14c and second gas inlet path 15b communicating with second gas hole 14d. First gas inlet path 15a and second gas inlet path 15b are each formed by a groove formed in cover 14. First gas inlet path 15a and second gas inlet path 15b each communicate with the outside of chamber 11. First gas inlet path 15a and second gas inlet path 15b are each connected to a gas source (not shown).

[0039] In this embodiment, the first gas introduction path 15a and the second gas introduction path 15b communicate with the outside of the chamber 11 via a passage (not shown) formed in the chamber 11. However, the first gas introduction path 15a and the second gas introduction path 15b may also communicate with the outside of the chamber 11 via a passage (not shown) formed in the dielectric member 13.

[0040] The flow rate of the source gas introduced into the first gas introduction path 15a is greater than the flow rate of the source gas introduced into the second gas introduction path 15b. The former flow rate may be smaller than the latter flow rate, or the two may be equal. The first gas introduction path 15a and the second gas introduction path 15b are separated from each other.

[0041] The induction coil 16 is provided above the dielectric member 13, and generates plasma containing the source gas within the chamber 11 when high-frequency power is applied. The induction coil 16 has a first induction coil 17 that is placed so as to overlap with the central region R1 of the dielectric member 13, and a second induction coil 18 that is placed so as to overlap with the peripheral region R2 of the dielectric member 13. The first induction coil 17 is placed above the central region R1 of the dielectric member 13. The second induction coil 18 is placed above the peripheral region R2 of the dielectric member 13.

[0042] The first induction coils 17 are each made up of one or more conductors that extend spirally in the circumferential direction of the chamber 11. The second induction coils 18 are each made up of one or more conductors that extend spirally in the circumferential direction of the chamber 11.

[0043] The first induction coil 17 may include one or more conductors, preferably two. The first reason is that the first induction coil 17 has a shorter coil length than the second induction coil 18, resulting in a lower impedance than the second induction coil 18 and the possibility of superposition of high-frequency signals between the coils. To suppress the superposition of high-frequency signals between the coils, it is desirable to reduce the impedance of each coil by increasing the distance between the coils, changing the height of the coil's application point, or by approximating the impedance of each coil. The second reason is that if the first induction coil 17 has one winding, uneven distribution of windings in the circumferential direction may occur. For these reasons, for example, if the second induction coil 18 has four windings, it is preferable that the first induction coil 17 has fewer windings than four, for example, two windings. In other words, it is preferable that the number of conductors forming the first induction coil 17 is more than one and is smaller than the number of conductors forming the second induction coil 18.

[0044] The first distance D1 between the first induction coil 17 and the first gas hole 14c (specifically, the distance between the lower end of the first induction coil 17 and the upper end of the first gas hole 14c) is longer than the second distance D2 between the second induction coil 18 and the second gas hole 14d (specifically, the distance between the lower end of the second induction coil 18 and the upper end of the second gas hole 14d). For example, the first distance D1 may be 1.3 times or more and 3 times or less than the second distance D2. The first distance D1 may be shorter than the second distance D2, or the two may be equal to each other. A portion of the second induction coil 18 (a portion on the outer periphery) is disposed in a recess 13a formed in the upper surface of the dielectric member 13.

[0045] First high frequency power supply 21 supplies high frequency power (e.g., AC power of 3 to 30 MHz) to first induction coil 17. First high frequency power supply 21 is connected to one end (first end 17a) of first induction coil 17 via first matching box 23 such as a variable capacitor. The other end (second end 17b) of first induction coil 17 is grounded via conductive chamber 11.

[0046] Second high frequency power supply 22 supplies high frequency power (e.g., AC power of 3 to 30 MHz) to second induction coil 18. Second high frequency power supply 22 is connected to one end of second induction coil 18 via second matching box 24 such as a variable capacitor. The other end of second induction coil 18 is grounded via conductive chamber 11.

[0047] The frequency of the power from first high frequency power supply 21 (power applied to first induction coil 17) and the frequency of the power from second high frequency power supply 22 (power applied to second induction coil 18) are different from each other. However, both frequencies may be the same.

[0048] The method of supplying high-frequency power to the first induction coil 17 and the second induction coil 18 is not limited to this. For example, a single high-frequency power source may be used, and a high-frequency distribution circuit may be connected to the output of the matching box, so that high-frequency power at any ratio may be applied to the first induction coil 17 and the second induction coil 18.

[0049] The metal cover 25 covers the first induction coil 17 and the second induction coil 18. The metal cover 25 is provided above the chamber 11 and is electrically connected to the chamber 11. The metal cover 25 is formed in a cylindrical shape with a closed upper end, but is not limited to this. The metal cover 25 may be made of aluminum, for example.

[0050] -How to use the plasma processing equipment- A method of using the plasma processing apparatus of this embodiment will be described. This method is a method of using the plasma processing apparatus 10 described above, and includes a step of introducing a source gas into the first and second gas inlet paths 15 a, 15 b and applying high-frequency power to the first and second induction coils 17, 18, thereby generating plasma containing the source gas in the chamber 11.

[0051] Second Embodiment A second embodiment of the present disclosure will be described. The plasma processing apparatus 10 of this embodiment differs from the first embodiment in that it includes a first support column 27 and the like. The following mainly describes the differences from the first embodiment.

[0052] As shown in FIGS. 3 and 4, the plasma processing apparatus 10 includes a first support column 27, a second support column 29, a first heater 31, a second heater 32, a first pressing section 33, and a second pressing section .

[0053] The first support pillar 27 is installed above the central region R1 of the dielectric member 13. The first support pillar 27 is made of an insulator. The first support pillar 27 is supported by the metal cover 25. The first support pillar 27 supports the first induction coil 17. The first support pillar 27 supports a conductive member 26 connected to the second end 17b of the first induction coil 17 via a fixing member 28. The conductive member 26 is electrically connected to the metal cover 25 above the first induction coil 17. The conductive member 26 does not extend to the region above the second induction coil 18. The first support pillar 27 is an example of a support pillar.

[0054] The second support pillar 29 is disposed above the peripheral region R2 of the dielectric member 13. The second support pillar 29 is made of an insulator. The second support pillar 29 is supported by the metal cover 25. The second support pillar 29 supports the second induction coil 18.

[0055] The first heater 31 and the second heater 32 are provided on the upper surface of the dielectric member 13, and heat the dielectric member 13 during plasma processing. The first heater 31 is disposed in a region closer to the center than the second heater 32.

[0056] The first pressing portion 33 and the second pressing portion 34 press the first heater 31 and the second heater 32 against the dielectric member 13. The first pressing portion 33 is provided between the first support column 27 and the first heater 31. The first pressing portion 33 has a first spring 33a for pressing the first heater 31 against the dielectric member 13. The second pressing portion 34 is provided between the metal cover 25 and the second heater 32. The second pressing portion 34 has a second spring 34a for pressing the second heater 32 against the dielectric member 13.

[0057] 4, the conductive member 26 is formed in a plate shape having a first main surface 26a and a second main surface 26b opposite to the first main surface 26a. The conductive member 26 is arranged so that the first and second main surfaces 26a, 26b extend along the radial direction of the chamber 11. For example, the conductive member 26 may be arranged so that a line extending along the first and second main surfaces 26a, 26b is substantially perpendicular to the side surface of the spiral-shaped second induction coil 18. "Substantially perpendicular" means that the line intersects the side surface at an angle of 80° or more and 100° or less.

[0058] Third Embodiment A third embodiment of the present disclosure will be described. The plasma processing apparatus 10 of this embodiment differs from the first embodiment in that it includes a protrusion 35 and the like. The following mainly describes the differences from the first embodiment.

[0059] As shown in FIG. 5, the plasma processing apparatus 10 includes a protrusion 35, a cylindrical member 36, and an optical sensor 39.

[0060] The protrusion 35 fits into a through-hole 13b formed in the center of the dielectric member 13 and extends above the dielectric member 13. The protrusion 35 has a dielectric window 35a for optical measurement at its upper end. The dielectric window 35a transmits light emitted by the optical sensor 39, the workpiece placed on the stage 12, or the plasma. The protrusion 35 may be made of a dielectric material or other materials.

[0061] The cylindrical member 36 is provided so as to extend vertically inside the protruding portion 35. The cylindrical member 36 is made of a dielectric material. A gas introduction space 37 communicating with the first gas introduction path 15a is formed between the cylindrical member 36 and the protruding portion 35. A source gas is introduced into this gas introduction space 37 from a gas source (not shown) via a gas pipe 38.

[0062] The optical sensor 39 is provided above the dielectric window 35a and detects information about the workpiece. The optical sensor 39 detects information about the workpiece by irradiating light onto the workpiece through the dielectric window 35a and receiving the reflected light. Alternatively, the optical sensor 39 detects information about the workpiece by receiving light emitted by the workpiece through the dielectric window 35a. Alternatively, the optical sensor 39 detects information about the workpiece and plasma by receiving light emitted by the plasma through the dielectric window 35a. The optical sensor 39 is, for example, an infrared sensor, but is not limited to this. The information about the workpiece is, for example, the thickness of at least a portion of the workpiece and / or the temperature of the workpiece. The information about the plasma is, for example, the composition of the plasma. [Industrial Applicability]

[0063] The present disclosure can be used for a plasma processing apparatus and a method of using the plasma processing apparatus. [Explanation of symbols]

[0064] 10: Plasma processing equipment 11: Chamber 11a:Aperture 11b: Exhaust port 12: Stage 12a: Placement surface 13: Dielectric material 13a: Recess 13b: Through hole 14: Cover 14a: First convex portion (convex portion) 14b: Second convex part 14c: First gas hole 14d: Second gas hole 15: Gas inlet 15a: First gas inlet 15b: Second gas inlet 16: Induction coil 17: First induction coil 17a: 1st end 17b: 2nd end 18: Second induction coil 21: 1st high frequency power supply 22:Second high frequency power supply 23: 1st matching box 24:Second matching box 25: Metal cover 26: Conductive material 26a: First main surface 26b: Second main surface 27: 1st pillar (pillar) 28: Fixing member 29:Second pillar 31: 1st heater 32: Second heater 33: First pressing part 33a: First spring 34: Second pressing part 34a: Second spring 35:Protrusion 35a: Dielectric window 36: Cylindrical member 37: Gas introduction space 38: Gas piping 39: Optical sensor D1: First distance D2: 2nd distance R1: Central area R2: Peripheral region

Claims

1. a chamber having an opening at the top; a stage disposed in the chamber and on which an object to be processed is placed; a dielectric member that closes the opening; a cover disposed in the chamber to cover the dielectric member; a gas inlet path formed between the dielectric member and the cover and through which a source gas is introduced; an induction coil provided above the dielectric member, the induction coil receiving high-frequency power to generate plasma containing the source gas within the chamber; Equipped with the induction coil includes a first induction coil disposed so as to overlap a central region of the dielectric member, and a second induction coil disposed so as to overlap a peripheral region of the dielectric member outside the central region, the cover has a first gas hole formed at a position overlapping the central region of the dielectric member, a second gas hole formed at a position overlapping the peripheral region of the dielectric member, and a convex portion on a lower surface between the first gas hole and the second gas hole, the gas introduction path includes a first gas introduction path communicating with the first gas hole and a second gas introduction path communicating with the second gas hole; Plasma processing equipment.

2. 2. The plasma processing apparatus of claim 1, wherein a first distance between the first gas hole and the first induction coil is different from a second distance between the second gas hole and the second induction coil.

3. 3. The plasma processing apparatus according to claim 1, wherein a flow rate of the source gas introduced into said first gas introduction passage is greater than a flow rate of the source gas introduced into said second gas introduction passage.

4. 4. The plasma processing apparatus according to claim 1, wherein the first gas introduction path and the second gas introduction path are separated from each other.

5. a chamber having an opening at the top; a stage disposed in the chamber and on which an object to be processed is placed; a dielectric member that closes the opening; a cover disposed in the chamber to cover the dielectric member; a gas inlet path formed between the dielectric member and the cover and through which a source gas is introduced; an induction coil provided above the dielectric member, the induction coil receiving high-frequency power to generate plasma containing the source gas within the chamber; a support pillar installed on an upper side of the dielectric member; a metal cover that supports the support column and covers the induction coil; Equipped with the induction coil includes a first induction coil disposed so as to overlap a central region of the dielectric member, and a second induction coil disposed so as to overlap a peripheral region of the dielectric member outside the central region, the cover has a first gas hole formed at a position overlapping the central region of the dielectric member and a second gas hole formed at a position overlapping the peripheral region of the dielectric member, the gas introduction path includes a first gas introduction path communicating with the first gas hole and a second gas introduction path communicating with the second gas hole; the first induction coil has a first end to which high frequency power is applied and a second end that is grounded; the second end is electrically connected to the metal cover via a conductive member supported by the support; The plasma processing apparatus, wherein the chamber is electrically connected to the metal cover and is grounded.

6. A plasma processing apparatus as described in claim 5, wherein a first distance between the first gas hole and the first induction coil is different from a second distance between the second gas hole and the second induction coil.

7. A plasma processing apparatus as described in claim 5 or 6, wherein the flow rate of the raw material gas introduced into the first gas introduction path is greater than the flow rate of the raw material gas introduced into the second gas introduction path.

8. A plasma processing apparatus described in any one of claims 5 to 7, wherein the cover has a convex portion on its underside between the first gas hole and the second gas hole.

9. A plasma processing apparatus described in any one of claims 5 to 8, wherein the first gas introduction path and the second gas introduction path are separated from each other.

10. the second induction coil is formed in a spiral shape extending along the circumferential direction of the chamber, The plasma processing apparatus according to any one of claims 5 to 9, wherein the conductive member is formed in a plate shape having a first main surface and a second main surface opposite to the first main surface, and the first and second main surfaces are arranged to extend along a radial direction of the chamber.

11. a chamber having an opening at the top; a stage disposed in the chamber and on which an object to be processed is placed; a dielectric member that closes the opening; a cover disposed in the chamber to cover the dielectric member; a gas introduction path formed between the dielectric member and the cover; an induction coil provided on the upper side of the dielectric member; Equipped with the induction coil includes a first induction coil disposed so as to overlap a central region of the dielectric member, and a second induction coil disposed so as to overlap a peripheral region of the dielectric member outside the central region, the cover has a first gas hole formed at a position overlapping the central region of the dielectric member, a second gas hole formed at a position overlapping the peripheral region of the dielectric member, and a convex portion on a lower surface between the first gas hole and the second gas hole, a first gas introduction path communicating with the first gas hole and a second gas introduction path communicating with the second gas hole, a plasma processing apparatus for generating plasma containing the source gas in the chamber by introducing the source gas into the first and second gas inlet paths and applying high frequency power to the first and second induction coils;

12. 12. The method of using a plasma processing apparatus according to claim 11, wherein a flow rate of the source gas introduced into the first gas introduction path is greater than a flow rate of the source gas introduced into the second gas introduction path.

13. 13. The method of using a plasma processing apparatus according to claim 11, wherein the first gas introduction path and the second gas introduction path are separated from each other.

14. a chamber having an opening at the top; a stage disposed in the chamber and on which an object to be processed is placed; a dielectric member that closes the opening; a cover disposed in the chamber to cover the dielectric member; a gas introduction path formed between the dielectric member and the cover; an induction coil provided on the upper side of the dielectric member; a support pillar installed on an upper side of the dielectric member; a metal cover that supports the support column and covers the induction coil; Equipped with the induction coil includes a first induction coil disposed so as to overlap a central region of the dielectric member, and a second induction coil disposed so as to overlap a peripheral region of the dielectric member outside the central region, the cover has a first gas hole formed at a position overlapping the central region of the dielectric member and a second gas hole formed at a position overlapping the peripheral region of the dielectric member, the gas introduction path includes a first gas introduction path communicating with the first gas hole and a second gas introduction path communicating with the second gas hole; the first induction coil has a first end to which high frequency power is applied and a second end that is grounded; the second end is electrically connected to the metal cover via a conductive member supported by the support; A method of using a plasma processing apparatus, wherein the chamber is electrically connected to the metal cover and is grounded, comprising: a plasma processing apparatus for generating plasma containing the source gas in the chamber by introducing the source gas into the first and second gas inlet paths and applying high frequency power to the first and second induction coils;

Images