Film forming device

Abstract

To provide a technique for more efficiently removing impurities inside a chamber using a getter material in a film deposition apparatus for sputtering.SOLUTION: A film deposition apparatus 1 comprises: a chamber 10; a first cathode unit 4 having a first target 2 including a film deposition material and forming a film of the film deposition material on a substrate 6 by sputtering inside the chamber; and a second cathode unit 14 having a second cylindrical target 12 including the getter material, and performing sputtering while rotating the second target 12 inside the chamber. A surface of the second target 12 can be directly seen from an area A1 from which the film deposition material of the first target 2 is emitted.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a film forming apparatus. [Background technology]

[0002] Film deposition devices are known that sputter a film deposition material, such as a metal, onto a substrate to form a thin film. Another known film deposition device uses magnetron sputtering, which increases efficiency by placing a magnet on the surface of a target made of the film deposition material opposite the substrate, generating a magnetic field to increase the electron density and perform sputtering. Another known method involves placing a target in a rotatable cylindrical shape and placing a magnet inside the cylindrical portion.

[0003] Sputtering film formation devices are suitable for forming electrode layers in, for example, organic electroluminescence (EL) display manufacturing equipment. The presence of impurities such as oxygen and water molecules inside the chamber of such film formation devices can degrade the device characteristics of the manufactured organic electroluminescence (EL) displays. Therefore, it is known to use highly reactive getter materials, such as titanium, to remove impurities from inside the chamber. For example, Patent Document 1 describes a technique for forming a getter material film inside the chamber and removing impurities during film formation by providing a getter target in addition to the film formation target. Patent Document 2 also describes a technique for using one of multiple sputtering sources to form a getter material film inside the device. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] WO 14 / 122700 [Patent Document 2] Special Publication No. 2005-504172 Summary of the Invention [Problem to be solved by the invention]

[0005] In a film deposition apparatus that performs sputtering, it is required to use a getter material to more efficiently remove impurities from the inside of the chamber and improve the quality of the film deposition.

[0006] The present invention has been made in view of the above-mentioned problems, and its purpose is to provide a technology for more efficiently removing impurities from inside a chamber using a getter material in a film formation apparatus that performs sputtering. [Means for solving the problem]

[0007] The present invention employs the following configuration: a chamber; a first cathode unit having a first target containing a film forming material, and performing sputtering inside the chamber to eject the film forming material from the first target toward the substrate; a second cathode unit having a cylindrical second target containing a getter material, and performing sputtering while rotating the second target inside the chamber; Equipped with 、 The second cathode unit is disposed on the opposite side of the first cathode unit from the substrate. The film forming apparatus is characterized by the above.

[0009] The present invention also employs the following configuration: a first cathode unit having a first target containing a film forming material and forming a film of the film forming material on a substrate by sputtering; a second cathode unit having a cylindrical second target containing a getter material, and capable of sputtering at a position other than the substrate while rotating the second target inside the chamber; A film forming apparatus comprising: The first cathode unit and the second cathode unit perform sputtering simultaneously. The film forming apparatus is characterized by the above. [Effects of the Invention]

[0010] According to the present invention, it is possible to provide a technique for more efficiently removing impurities from the inside of a chamber using a getter material in a film-forming apparatus that performs sputtering. [Brief explanation of the drawings]

[0011] [Figure 1] 1 is a cross-sectional view showing the configuration of a film forming apparatus according to a first embodiment. [Figure 2] 1 is a cross-sectional view showing the configuration of the film forming apparatus of the first embodiment in a different direction. [Figure 3] A perspective view showing the configuration of a magnet unit [Figure 4] FIG. 1 is a diagram illustrating a film formation process in the first embodiment. [Figure 5] FIG. 10 is a diagram illustrating the film formation process in the second embodiment. [Figure 6] FIG. 10 is a diagram illustrating the film formation process in the third embodiment. [Figure 7] 10 is a cross-sectional view showing the configuration of a film forming apparatus according to a fourth embodiment. [Figure 8] 10 is a cross-sectional view showing the configuration of a film forming apparatus according to a fifth embodiment. [Figure 9] 13 is a diagram showing the configuration of a film forming apparatus according to a sixth embodiment and the state of film formation. [Figure 10] Diagram showing the general layer structure of an organic EL element DETAILED DESCRIPTION OF THE INVENTION

[0012] The following describes in detail embodiments of the present invention. However, the following embodiments merely exemplify preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. Furthermore, unless otherwise specified, the hardware and software configurations, processing flows, manufacturing conditions, dimensions, materials, shapes, and the like of the devices in the following description are not intended to limit the scope of the present invention to these alone.

[0013] The present invention is suitable for forming a thin film, particularly a metal or metal oxide thin film, on a film formation target such as a substrate by sputtering. The present invention can be understood as a sputtering apparatus and a control method thereof, a film formation apparatus and a control method thereof, a sputtering method, or a film formation method. The present invention can also be understood as an electronic device manufacturing apparatus, an electronic device manufacturing method, or a device manufacturing method. The present invention can also be understood as a program for causing a computer to execute the control method, or a storage medium storing the program. The storage medium may be a non-transitory storage medium readable by a computer.

[0014] [Embodiment 1] The basic configuration of the film forming apparatus 1 of this embodiment will be described. The film forming apparatus 1 is used to deposit and form a thin film on a substrate in the manufacture of various electronic devices such as semiconductor devices, magnetic devices, and electronic components, as well as optical components. In the following description, the term "substrate" as an object on which a film is formed also includes a substrate on which a laminate is formed. Typically, the film forming apparatus 1 is suitable for the manufacture of panels for organic EL displays provided with organic EL elements, and is particularly suitable for forming an electrode layer using a film forming material such as metal.

[0015] The film formation apparatus 1 may be part of a film formation system such as a cluster type or an in-line type. Each of the multiple film formation apparatuses included in such a film formation system forms a part of the films that are stacked on the substrate in large numbers. Note that not all of the film formation apparatuses included in the film formation system need to be sputtering apparatuses; some of the film formation apparatuses may form films by sputtering as in the embodiment of the present invention, and other film formation apparatuses may form films by evaporation.

[0016] (Device configuration) FIG. 1 is a simplified cross-sectional view showing the configuration of a film formation apparatus 1 according to this embodiment. The film formation apparatus 1 includes a chamber 10. A substrate 6, which is a film formation target, is loaded into the chamber 10 from outside the film formation apparatus. The substrate 6 is loaded through a gate valve 17 provided on the first sidewall 10a. After film formation is completed, the substrate 6 is unloaded through a gate valve 18 provided on the second sidewall 10b. After the substrate 6 is loaded into the chamber, an alignment unit (not shown) aligns the substrate 6 with a mask 7. A support unit 8 supports the aligned substrate 6 and mask 7 in close contact at a predetermined film formation height. The support unit 8 may include a magnetic plate for attracting the mask 7 from the back of the substrate 6. The substrate 6 can be made of a desired material, such as glass, and the mask 7 can be made of a desired type, such as a metal mask.

[0017] A target 2 made of a film formation material and a magnet unit 3 facing a substrate 6 via the target 2 are disposed inside the chamber. The target 2 in this embodiment is a cylindrical rotary cathode. The target 2 and the magnet unit 3 disposed inside the target constitute a rotary cathode unit 4. Note that the term "cylindrical" here does not only mean a mathematically strict cylindrical shape, but also includes shapes whose generatrix is ​​a curved line rather than a straight line, and shapes whose cross section perpendicular to the central axis is not a mathematically strict "circle." In other words, the target 2 in the present invention may be any shape that is approximately cylindrical and can rotate around its central axis. The rotary cathode unit 4 corresponds to the first cathode unit.

[0018] In the film formation process, the target 2 of the rotary cathode unit 4 rotates around the central axis of rotation. On the other hand, the magnet unit 3 of this embodiment does not rotate, unlike the target 2. A magnetic field is formed on the surface side of the target 2 facing the substrate 6, increasing the electron density in the vicinity of the target 2. This region is the sputtering region A1 where sputter particles are generated. A first side plate 261 may be provided along the longitudinal direction of the rotary cathode unit 4 and along the longitudinal direction of the target 2 as a shield plate for preventing sputter particles from adhering.

[0019] In this embodiment, a second target 12 and a second magnet unit 13 are also arranged inside the chamber, facing the second side panel 262 via the second target 12. The second target 12 is also a cylindrical rotary cathode. The second target 2 and the second magnet unit 13 constitute a second rotary cathode unit 14. The region where a magnetic field is generated in the second rotary cathode unit 14 is a second sputtering region A2 where sputtered particles of the getter material are generated. The second rotary cathode unit 14 corresponds to the second cathode unit.

[0020] Here, when sputtering is performed by the second rotary cathode unit 14, A film made of getter material is formed on the surface of the second side plate 262 provided along the longitudinal direction of the second target 12. This increases the surface area of ​​the getter material, enhancing the effect of removing impurities. In this embodiment, the second side plate 262 is made larger than the first side plate 261 to increase the area of ​​the getter film. However, the size, shape, and arrangement of each side plate are not limited to this example. The second side plate 262 also functions as a shield against sputtered particles of the getter material.

[0021] Considering the flight distance of the getter material, it is preferable to provide the second side plate 262 close enough to the second target 12 to form a getter film. However, increasing the distance from the second sputtering region A2 allows the area of ​​the getter film to be increased. On the other hand, increasing the distance from the first target 2 to the getter film reduces the effectiveness of impurity removal. Therefore, it is preferable to determine the distance between the second side plate 262 and the second target 12 in consideration of the above factors, depending on the device configuration and the desired impurity removal capacity.

[0022] An exhaust port (not shown) connected to an exhaust means such as a pump is disposed on one of the walls of chamber 10. A control unit 51 controls the exhaust means to control the degree of vacuum inside the chamber. An inlet (not shown) for introducing a sputtering gas may be disposed on one of the walls of chamber 10. An inert gas such as argon is used as the sputtering gas. The gas introduction means has a supply source such as a gas cylinder, and supplies the sputtering gas via a piping system connecting the supply source and the inlet.

[0023] FIG. 2 is a schematic cross-sectional view of the film forming apparatus 1 as viewed from a different direction than FIG. 1, and corresponds to a view taken along line A-A' in FIG. 1. In FIG. 2, the rotary cathode unit 4 is hidden by the second rotary cathode unit 14. For convenience, the side panels are omitted. The second rotary cathode unit 14 is supported by a support block 210 and an end block 220, both ends of which are fixed on a base 230. The target 12 of the second rotary cathode unit 14 is rotatable around a rotation axis N. Meanwhile, the second magnet unit 13 is fixed and supported. The rotary cathode unit 4 has a similar configuration.

[0024] The target 2 and the second target 12 are rotationally driven by a target drive device 53, which is a rotation means. As the target drive device 53, a general drive mechanism having a drive source such as a motor and transmitting power to the target 2 and the second target 12 via a power transmission mechanism can be used. The target drive device 53 may be mounted on the support block 210 or the end block 220.

[0025] The target 2 serves as a supply source of a film forming material for forming a film on the substrate 6. Examples of materials for the target 2 include metals such as Cu, Al, Ti, Mo, Cr, Ag, Au, and Ni, or alloys containing these metal elements as the main component. Alternatively, the target 2 may be a transparent conductive oxide such as ITO, IZO, IWO, AZO, GZO, or IGZO. However, the material of the target 2 is not limited to these.

[0026] The material of the second target 12 is a getter material suitable for removing impurities such as oxygen and water molecules from the chamber. A highly reactive substance is preferable as the getter material, and examples of such getter materials include Ti, Zr, V, Mg, Al, Ta, W, Mo, Hf, Nb, Fe, Ag, Ba, and Yb. Also, alloys or compounds containing the above metal elements as the main component can be used as the getter material. However, the material of the second target 12 is not limited to these.

[0027] The power supply 52 applies a bias voltage to the target 2 and the second target 12. A backing tube layer (not shown) may be formed inside the target 2 or the second target 12. In that case, the backing tube functions as a cathode to which a bias voltage is applied from the power supply 52. ​​The chamber 10 is grounded.

[0028] 3 is a perspective view showing an example of the configuration of the magnet unit. The magnet unit 3 includes a central magnet 31 extending in a longitudinal direction substantially parallel to the rotation axis of the rotary cathode unit 4, peripheral magnets 32 surrounding the central magnet 31 and having a polarity opposite to that of the central magnet 31, and a yoke plate 33. The peripheral magnet 32 ​​includes a pair of straight portions 32a and 32b extending parallel to the central magnet 31, and turning portions 32c and 32d connecting both ends of the straight portions 32a and 32b.

[0029] The magnet unit 3 forms a magnetic field around the target 2. The magnetic field formed by the magnet unit 3 has magnetic field lines that loop back from the magnetic pole of the central magnet 31 toward the straight portions 32a and 32b of the peripheral magnet 32. This forms a magnetic field tunnel extending in the longitudinal direction of the target 2 near the surface of the target 2. This magnetic field captures electrons and concentrates plasma near the surface of the target 2, thereby increasing sputtering efficiency. The area on the surface of the target 2 where the magnetic field of this magnet unit leaks becomes the sputtering region A1 where sputtered particles are generated.

[0030] The second magnet unit 13 has a configuration similar to that of the magnet unit 3, and has the function of generating sputtered particles in the second sputtering region A2.

[0031] The film forming apparatus 1 of this embodiment includes a control unit 51, a power supply 52, and a target driver 53 outside the chamber. The control unit 51 controls the operation of the components of the film forming apparatus 1 in accordance with a predetermined program or user instructions. The control unit 51 is an information processing device equipped with resources such as a processor, memory, storage device, and communication means, and may utilize a computer or control circuit. The power supply 52 controls the application of voltage during sputtering under the control of the control unit 51. The target driver 53 transmits driving force to the rotary cathode unit 4 and the second rotary cathode unit 14 under the control of the control unit 51 to rotate the target 2 and the second target 12.

[0032] (Device operation) The operation of the film forming apparatus 1 will now be described. FIGS. 4(a) to 4(d) show a portion of the internal structure of the chamber 10 that is necessary for the description. First, the target driver 53 rotates the second target 12 in the direction of the outline arrow, as shown in FIG. 4(a). The power supply 52 then applies a voltage to the second target 12 to generate plasma in the region (region 12K) facing the second side plate 262, causing sputtered particles to scatter in the second sputtering region A2. The scattered sputtered particles are deposited on the second side plate 262 (region 262K). That is, the second side plate 262 functions as an attachment member to which a thin film of getter material adheres.

[0033] 4(b), target driver 53 rotates target 2 in the direction of the white arrow. Then, power supply 52 applies a voltage to target 2. As a result, the area near the surface of target 2 facing substrate 6 is sputtered, and sputtered particles are scattered in sputtering area A1. As a result, the film-forming material adheres to substrate 6 above.

[0034] In the case of FIG. 4(b), active getter material exists mainly in the following two places. (A) Surface of the second target 12 (particularly the area where the surface has been cleaned by sputtering) (B) Getter film attached to region 262K of second side plate 262

[0035] Region 12L of second target 12 indicates a portion that has been cleaned by sputtering. The portion that has been cleaned by sputtering refers to the target surface immediately after it has moved out of the second sputtering region A2 due to the rotation of second target 12. As an example, when the central angle of a sector that forms second sputtering region A2 in the cross section of second target 12 is θ, the target surface region that moves out of the second sputtering region while second target 12 rotates by θ may be considered to be the clean portion.

[0036] Figure 4(c) shows a schematic diagram of how impurities are removed from the atmosphere by the getter material. Dashed arrows Ya1-Ya3 indicate impurities captured on the surface of the second target (A), and dashed arrows Yb1-Yb4 indicate impurities captured in the getter film (B). For example, as indicated by arrow Ya1, the surface of the second getter target 12 is directly visible from region (A1) of target 2 where sputtered particles are emitted, allowing for efficient impurity removal. Furthermore, as indicated by arrow Yb2, region 262K where the getter film is located is directly visible from region A1 of target 2, allowing for efficient impurity removal by the getter film. Here, "directly visible from a given region" means that there is no shield between at least one point in that region and the target. Shields include the target itself, components of the cathode unit, shielding plates, other devices and components within the chamber, etc.

[0037] The ability of the getter material to remove impurities varies depending on the surface area of ​​the getter material, the distance between the target 2 and the getter material, and the presence or absence of obstacles, but as explained above, the surface of the second getter target 12 is directly visible from the surface of the film formation target 2 (particularly the region from which the film formation material is released), so removal by the second target 12 is more efficient. Also, the region 12K of the second target 12 is closer to the target 2 than the region 262K of the second side plate 262, so impurities can be removed efficiently even if the surface area is small.

[0038] FIG. 4(d) shows another control example using the configuration of this embodiment. In this example, the film-forming target 2 and the second getter target 12 are simultaneously rotated while a voltage is applied to perform sputtering. This ensures that highly active getter material is always present on the surface of the second target 14 and in the region 262K of the second side plate, allowing impurities to be efficiently removed during film formation and forming a high-quality thin film. Applying this thin film to a device can further improve the device characteristics.

[0039] As described above, in the film formation apparatus according to this embodiment, the rotary cathodes for film formation and getter film formation each perform sputtering, thereby efficiently removing impurities from the chamber and forming a high-quality thin film. By applying this thin film to a device, a device with good element characteristics can be realized.

[0040] [Embodiment 2] The configuration and functions of the film forming apparatus 1 according to the second embodiment will be described. The same parts as those in the first embodiment will be given the same reference numerals, and the description will be simplified.

[0041] FIG. 5 shows the parts necessary for explanation inside the chamber of the film forming apparatus 1 according to this embodiment. The material of the target 2 of the rotary cathode unit 4 is Ag, and the material of the second target 12 of the second rotary cathode unit 14 is Mg. However, these materials are merely examples. As will be described later, the second rotary cathode unit 14 of this embodiment is used to form electrode films such as the upper electrode in addition to forming a getter film. Therefore, the size and position of the second side plate 262 in this embodiment are determined based on the size and position of the second target 12. The structure is such that sputtered particles flying from the get 12 to the substrate 6 above are not blocked.

[0042] In FIG. 5(a), target driver 53 rotates second target 12 in the direction of the white arrow. Then, power supply 52 applies a voltage to second target 12. As a result, plasma is generated in a region (region 12K) facing second side plate 262 near the surface of second target 12, and sputtered particles are scattered in second sputtering region A2. The scattered sputtered particles are deposited on second side plate 262 (region 262K). That is, second side plate 262 functions as a getter material adhesion member on which a thin film of getter material containing Mg is formed.

[0043] Next, the control unit 51 changes the direction of the second magnet unit 13 inside the second target 12 so that the sputtering region faces the substrate 6 above, as shown by the black arrow in FIG. 5(b).

[0044] Next, the control unit 51 performs co-sputtering, which involves simultaneous sputtering from the two targets. That is, as shown in Fig. 5(c), the control unit 51 rotates the target 2 and the second target 12 in the directions of the white arrows, and applies a voltage to the target 2 and the second target 12. As a result, Ag is scattered in the sputtering region A1, and Mg is scattered in the second sputtering region A2, forming an electrode film of an Ag-Mg alloy on the substrate 6.

[0045] During the film formation by the above-described co-sputtering, Mg as a getter material is first present on the surface of the second target 12 (particularly in the area where the surface has been cleaned by sputtering). This second target surface is located within a range that can be directly seen from the emission surface of the target 2 and is in the vicinity of the target 2, so that impurities, including molecules, emitted from the target 2 can be efficiently removed. Furthermore, impurities are also removed from the getter film attached to the region 262K of the second side plate 262, further enhancing the removal effect. Furthermore, these getter materials can also remove impurities emitted from the second target 12 itself.

[0046] As described above, the film formation apparatus according to this embodiment can efficiently remove impurities from inside the chamber using a getter material. Furthermore, the rotary cathode unit 14 for the getter material in this embodiment also serves as the rotary cathode unit for film formation. Therefore, there is no need to provide the film formation apparatus with a rotary cathode unit dedicated to getter film formation, which reduces costs. Furthermore, because the technology for changing the direction of material emission during sputtering by changing the orientation of the magnet unit is well known, the configuration of this embodiment can be implemented using existing rotary cathode units.

[0047] [Embodiment 3] The configuration and functions of the film forming apparatus 1 according to the third embodiment will be described. The same parts as those in the above-described embodiments will be assigned the same reference numerals, and the description will be simplified.

[0048] FIG. 6 shows the parts necessary for explanation within the chamber of the film forming apparatus 1 according to this embodiment. Inside the chamber of this embodiment, a planar cathode unit 104 using a flat planar target 102 is used as a sputtering source for film formation. The planar cathode unit 104 has the planar target 102 arranged approximately parallel to the film formation surface of the substrate 6, which is the film formation target, and a magnet unit 103, which is a magnetic field generating means, arranged on the opposite side of the planar target 102 from the substrate 6. When power is applied to the planar target 102, sputtered particles are generated in the sputtering region A1. It should be noted that a backing plate may be provided on the surface of the planar target 102 opposite the substrate 6, in which case power is applied to the backing plate from the power supply 52. The middle cathode unit 104 corresponds to the first cathode unit.

[0049] On the other hand, the rotary cathode unit 204 for forming the getter film in this embodiment has a target 202 and a magnet unit 203, and has the same configuration and function as the second rotary cathode unit 14 used for forming the getter film in each of the above embodiments. The planar target 102 and the target 202 of the rotary cathode unit 204 can be selected from various materials, as in embodiment 1. The rotary cathode unit 204 corresponds to the second cathode.

[0050] During film formation, target driver 53 rotates target 202 in the direction of the white arrow, and power supply 52 applies a voltage to target 202. This causes sputtered particles to scatter into second sputtering region A2, and a thin film of getter material adheres to region 262K of second side plate 262. Next, control unit 51 applies a voltage from power supply 52 to planar target 102 of planar cathode unit 104. As a result, sputtered particles are scattered into sputtering region A1 and deposited on substrate 6.

[0051] According to the above configuration, impurities during sputtering by the planar cathode unit 104 are captured by the getter material on the surface of the target 102 (especially the area where the surface has been cleaned by sputtering) or the getter film attached to the second side plate 262 and removed from the atmosphere, thereby enabling good film formation.

[0052] Sputtering using the rotary cathode unit 204 may be performed in parallel with film formation on the substrate 6 using the planar cathode unit 104. This not only generates a new getter film on the second side plate 262, but also constantly creates a clean area on the surface of the target 202, thereby enhancing the impurity removal effect.

[0053] [Embodiment 4] The configuration and functions of the film forming apparatus 1 according to the embodiment 4 will be described. The same parts as those in the above embodiments are given the same reference numerals, and the description will be simplified.

[0054] 7 is a schematic cross-sectional view showing the configuration of the film forming apparatus 1 according to this embodiment. The rotary cathode unit 4 and the second rotary cathode unit 14 have the same configurations and functions as those in the first embodiment.

[0055] A guide rail 250 extending in the X-axis direction is disposed near the lower partition wall 10c of the chamber 10. The rotary cathode unit 4 and the second rotary cathode unit 14 move in the X-axis direction along the guide rail 250 together with the base 230, which functions as a moving table. The moving table drive device 54 (drive means) can be any of various known motion mechanisms, such as a screw feed mechanism using a ball screw or the like that converts the rotational motion of a rotary motor into driving force, or a linear motor. The moving table drive device 54 in the illustrated example moves the base 230 in a direction (X-axis direction) that intersects with the longitudinal direction (Y-axis direction) of the target 2.

[0056] An example of a specific configuration will be described below. The base 230 is supported movably along a pair of guide rails 250 via a transport guide such as a linear bearing. The rotary cathode unit 4 and the second rotary cathode unit 14 move along the guide rails 250 within a movement area, which is a plane approximately parallel to the substrate 6, while rotating around the rotation axis N with the rotation axis N extended in the Y-axis direction. This causes the adhesion area (A3) where sputtered particles flying from the rotary cathode unit 4 adhere to the substrate 6 to also move, so that film formation can be performed over the entire substrate even if the size of the adhesion area is small compared to the area of ​​the substrate 6. Note that during sputtering for film formation, it is possible to reduce unevenness in film formation to achieve uniform film formation, etc. For this purpose, the base 230 may be moved back and forth multiple times.

[0057] In this manner, if the rotary cathode unit 4 mounted on the base 230 and the second rotary cathode unit 14 move together, the getter film produced by the second rotary cathode unit 14 and the getter material on the surface of the second target 12 also move in accordance with the movement of the rotary cathode unit 4, thereby enabling impurities in the atmosphere to be removed near the target 2.

[0058] [Embodiment 5] The configuration and functions of the film forming apparatus 1 according to the fifth embodiment will be described. The same parts as those in the above-described embodiments will be assigned the same reference numerals, and the description will be simplified.

[0059] 8 is a schematic cross-sectional view showing the configuration of the film forming apparatus 1 according to this embodiment. The configurations and functions of the rotary cathode unit 4 and the second rotary cathode unit 14 are the same as those in the first embodiment.

[0060] The film formation apparatus 1 of this embodiment has a side deposition configuration in which a film is formed from the side of a substrate 6 held by a support means 8 so that the surface to be film-formed is vertical. The rotary cathode unit 4 is disposed inside the chamber so that the sputtering region A1 during film formation faces the surface to be film-formed of the substrate 6.

[0061] In this embodiment, the second rotary cathode unit 14 is positioned so that the second sputtering region A2 faces downward in the plane of the drawing, and so that sputtered particles adhere to the second side plate 262. This forms a film of getter material. During film formation by the rotary cathode unit 4, impurities are removed by the formed film of getter material and the surface of the second target 12 of the second rotary cathode unit 14 (particularly the area whose surface has been cleaned by sputtering), thereby improving the atmosphere inside the chamber.

[0062] As described above, with the film deposition apparatus of this embodiment, impurities in the atmosphere can be efficiently removed even in the side deposition method in which a film is deposited on a substrate 6 that is set up approximately vertically.

[0063] (Variation) The present invention can also be applied to a deposit-down configuration in which the substrate 6 is placed on the side of the lower partition wall 10c of the chamber 10, the rotary cathode unit 4 is placed above the chamber 10, and sputtered particles fly from above to below. In addition, regardless of the installation angle of the substrate 6, sputtering for film formation and sputtering for gettering can be performed according to that angle.

[0064] [Embodiment 6] The configuration and functions of the film forming apparatus 1 according to the sixth embodiment will be described. The same parts as those in the above-described embodiments will be assigned the same reference numerals, and the description will be simplified.

[0065] 9(a) is a schematic cross-sectional view showing the configuration of the film forming apparatus 1 according to this embodiment. The rotary cathode unit 4 and the second rotary cathode unit 14 are arranged side by side in the vertical direction on the paper. That is, the second rotary cathode unit 14 is arranged on the opposite side of the rotary cathode unit 4 from the substrate 6.

[0066] Furthermore, the second rotary cathode unit 14 of this embodiment is configured to be able to swing the direction of the magnetic field formed by the second magnet unit 13, and the second sputtering region A2 is movable from a direction facing the first side plate 261 as shown in FIG. 9(b) to a direction facing the second side plate 262 as shown in FIG. 9(c).

[0067] The second rotary cathode unit 14 sputters the getter material while swinging the orientation of the magnet unit. As a result, a getter film is formed on the regions 230K, 261K, and 262K of the base 230, the first side plate 261, and the second side plate 262, respectively. As a result, impurities such as gas molecules are removed by the getter film when the rotary cathode unit 4 forms a film on the substrate 6. Note that the second rotary cathode unit 14 may also sputter the getter material while the rotary cathode unit 4 is forming a film on the substrate 6. This ensures that a clean surface is always formed on the surface of the second target 12, allowing for more efficient removal of impurities.

[0068] <Electronic device manufacturing method> A method for manufacturing an electronic device using the above-described film formation apparatus will be described. Here, an organic EL element used in an organic EL display device or the like will be described as an example of the electronic device. The electronic device according to the present invention is not limited to this, and may also be a thin-film solar cell or an organic CMOS image sensor. This embodiment includes a step of forming an organic film on a substrate 6, and a step of forming a metal film or metal oxide film after the organic film is formed. The structure of an organic EL element 600 obtained by these steps will be described below.

[0069] FIG. 10 schematically illustrates a typical layer structure of an organic EL device 600. The illustrated organic EL device 600 includes an anode 601 (lower electrode), a hole injection layer 602, a hole transport layer 603, an organic light-emitting layer 604, an electron transport layer 605, an electron injection layer 606, and a cathode 607 (upper electrode) stacked in this order on a substrate 6. If necessary, an insulating layer may be provided to prevent short circuits between the electrodes due to foreign matter, or a protective layer may be provided to suppress deterioration. The film forming apparatus 1 according to the embodiment is particularly suitable for forming a film of a metal or metal oxide, etc., used for the electron injection layer or electrode (cathode) on an organic film by sputtering. The film forming system may, for example, form an organic film on a substrate using a film forming apparatus equipped with a vapor deposition apparatus, and form a metal film on the organic film using a film forming apparatus equipped with a sputtering apparatus.

[0070] Furthermore, the method is not limited to deposition on organic films, but can be used to deposit laminated films on a variety of surfaces as long as the combination of materials that can be deposited by sputtering, such as metal materials and oxide materials, is used. By using a mask with a desired mask pattern during film deposition, each layer to be deposited can be configured as desired.

[0071] [Other embodiments] Various variations in the implementation of the present invention have been described above. For example, as shown in embodiment 1, the arrangement of the rotary cathode unit for film formation and the rotary cathode unit for getter film formation can be configured such that both rotary cathode units are approximately equidistant in the normal direction to the substrate surface on which the film is to be formed. Alternatively, as shown in embodiment 6, the rotary cathode unit for getter film formation can be configured to be located on the opposite side of the substrate from the rotary cathode unit for film formation. Furthermore, a rotary cathode unit or a planar cathode unit can be used as a sputtering source for film formation. A configuration in which the cathode unit is moved within the chamber to form a film over a large area can also be employed. Various methods, such as deposit-up, deposit-down, and side deposition, can be used to place the substrate in the chamber. Furthermore, when sputtering for film formation is performed, sputtering for getter film formation can be stopped or can be operated in parallel. The rotary cathode unit for getter film formation can be dedicated to getter film formation or can also be used for film formation. The combinations of these various variations are not limited to the examples of the above-described embodiments, and may be arbitrarily combined with each other as long as no contradiction occurs. [Explanation of symbols]

[0072] 1: film forming apparatus, 2: target, 4: rotary cathode unit, 10: chamber, 12: second target, 14: second rotary cathode unit

Claims

1. a chamber; a first cathode unit having a first target containing a film forming material, and performing sputtering inside the chamber to eject the film forming material from the first target toward the substrate; a second cathode unit having a cylindrical second target containing a getter material, and performing sputtering while rotating the second target inside the chamber; The second cathode unit is disposed on the opposite side of the first cathode unit from the substrate. A film forming apparatus characterized by:

2. The getter material emitted from the second target is attached to an attachment member to form a getter film.

2. The film forming apparatus according to claim 1.

3. The attachment member is provided opposite to a region of the second target from which the getter material is released.

3. The film forming apparatus according to claim 2.

4. The second cathode unit sputters the getter material in parallel with the sputtering of the film formation material onto the substrate by the first cathode unit.

4. The film forming apparatus according to claim 1, wherein the film forming apparatus is a film forming apparatus.

5. The first target of the first cathode unit has a cylindrical shape.

5. The film forming apparatus according to claim 1, wherein the film forming apparatus is a film forming apparatus.

6. The apparatus further includes a driving means for moving the first cathode unit and the second cathode unit in a movement region substantially parallel to the film-forming surface of the substrate.

6. The film forming apparatus according to claim 1, wherein the film forming apparatus is a film forming apparatus.

7. The getter material from the second target is emitted on the opposite side to the first cathode unit.

7. The film forming apparatus according to claim 1, wherein the film forming apparatus is a film forming apparatus.

8. The getter material is any one of metal elements including Ti, Zr, V, Mg, Al, Ta, W, Mo, Hf, Nb, Fe, Ag, Ba, and Yb, or an alloy containing any one of the metal elements as a main component.

8. The film forming apparatus according to claim 1, wherein the film forming apparatus is a film forming apparatus.

9. a first cathode unit having a first target containing a film forming material and forming a film of the film forming material on a substrate by sputtering; a second cathode unit having a cylindrical second target containing a getter material, and capable of sputtering at a position other than the substrate while rotating the second target inside the chamber; A film forming apparatus comprising: The first cathode unit and the second cathode unit perform sputtering simultaneously. A film forming apparatus characterized by:

10. A device manufacturing method using the film forming apparatus according to any one of claims 1 to 9, a film formation step of depositing the film formation material emitted from the first target on the substrate; A device manufacturing method comprising:

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