adhesive tape

Abstract

To provide an adhesive tape that can appropriately suppress or prevent occurrence of glue adhesion in which when a substrate attached to the adhesive tape is cut in a thickness direction into individual pieces to obtain components, part of an adhesive layer included in the adhesive tape is attached to side faces of the obtained components.SOLUTION: An adhesive tape 100 comprises a base material 4 and an adhesive layer 2, and is used with at least one of a substrate and components temporarily fixed thereto. Before application of energy to the adhesive layer 2, a test piece of the adhesive layer is manufactured having a thickness of 0.5 mm×a width of 6 mm×a length of 20 mm and including notches having a length of 1 mm along a width direction at the center in a longitudinal direction, and before the application of energy, the test piece is elongated in the longitudinal direction in conditions of 25°C, an inter-chuck distance of 10 mm, and a tension speed of 1000 mm / min. In a displacement-stress curve measured at this time, tear strength is 0.18 MPa or more and 1.09 MPa or less, and elongation at break is 200% or more and 2500% or less.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to an adhesive tape used for temporarily fixing a substrate and a component. [Background technology]

[0002] In response to the recent trend toward more sophisticated electronic devices and the expansion of mobile applications, there is a growing demand for higher density and integration of semiconductor devices, and IC packages are becoming larger in capacity and higher in density.

[0003] For example, a method for manufacturing these semiconductor devices involves first applying adhesive tape to a semiconductor substrate (semiconductor wafer) as a substrate, and then dicing the semiconductor substrate in the thickness direction using a dicing saw while fixing the periphery of the semiconductor substrate with a wafer ring. This results in the semiconductor substrate being cut into individual semiconductor elements (semiconductor chips). This is followed by an expanding process in which the adhesive tape is radially stretched using a wafer ring to form gaps between adjacent semiconductor elements. This is followed by a pick-up process in which the singulated semiconductor elements are picked up while being pushed up using a needle. The picked-up semiconductor elements are then transferred to a mounting process in which they are mounted on a metal lead frame or substrate (e.g., a tape substrate, an organic hard substrate, etc.). In the mounting process, the picked-up semiconductor elements are bonded to a lead frame or substrate, for example, via an underfill material. The semiconductor elements are then encapsulated on the lead frame or substrate with a sealing portion, thereby producing a semiconductor device.

[0004] In recent years, various studies have been conducted on adhesive tapes (dicing tapes) used in the manufacture of such semiconductor devices (see, for example, Patent Document 1).

[0005] This adhesive tape generally has a substrate (film substrate) and an adhesive layer formed on the substrate, and the semiconductor substrate is fixed by the adhesive layer. With an adhesive tape having such a configuration, as in the above-mentioned method for manufacturing a semiconductor device, a pick-up process for picking up semiconductor elements is carried out after a dicing process for dicing the semiconductor substrate. That is, in the dicing process, the semiconductor substrate is divided into individual pieces using a disk-shaped dicing saw to obtain semiconductor elements. In the pick-up process, energy is applied to the adhesive layer to reduce the adhesive strength of the adhesive layer, and then the semiconductor elements are pushed up using a needle. While maintaining this state, the semiconductor elements are picked up by suction using a vacuum collet or air tweezers, for example.

[0006] However, when manufacturing a semiconductor device using this adhesive tape, the dicing process, in which a dicing saw is used to separate a semiconductor substrate into individual semiconductor elements, has the following problems. Specifically, in the dicing process, when the semiconductor substrate is diced (cut) in the thickness direction using a dicing saw to separate the semiconductor substrate into individual semiconductor elements, the cutting of the semiconductor substrate is generally continued until it reaches the middle of the thickness direction of the base material of the adhesive tape in order to ensure the semiconductor substrate is individually separated. Therefore, the adhesive layer of the adhesive tape located closer to the semiconductor substrate than the base material is naturally cut by the dicing saw when the semiconductor substrate is cut. This has led to the problem of adhesive adhesion, whereby portions of the cut adhesive layer adhere to the side surfaces of the semiconductor elements obtained by separating the semiconductor substrate.

[0007] Furthermore, such problems are not limited to cases where semiconductor elements are obtained as components by cutting a semiconductor substrate (semiconductor wafer) as a substrate in the thickness direction, but also occur in cases where a sealed semiconductor body is picked up as a component by cutting a sealed semiconductor linked body in the thickness direction, in which multiple semiconductor elements are sealed with sealing portions, or in cases where various substrates such as glass substrates, ceramic substrates, resin material substrates, and metal material substrates are cut (diced) in the thickness direction to obtain singulated components. [Prior art documents] [Patent documents]

[0008] [Patent Document 1] Japanese Patent Application Laid-Open No. 2009-245989 Summary of the Invention [Problem to be solved by the invention]

[0009] The present invention aims to provide an adhesive tape that can accurately suppress or prevent glue adhesion, in which part of the adhesive layer of the adhesive tape adheres to the side of the obtained component when the component is obtained by cutting a substrate attached to the adhesive tape in the thickness direction to separate the components. [Means for solving the problem]

[0010] These objects can be achieved by the present invention as set forth in (1) to (8) below. (1) An adhesive tape comprising a substrate and an adhesive layer laminated on one surface of the substrate, the adhesive tape being used to temporarily fix at least one of a substrate and a component, the adhesive layer contains a base resin having adhesiveness and a curable resin that is cured by the application of energy, and the adhesive strength of the adhesive layer is reduced by applying energy to the adhesive layer to cure the adhesive layer; A test piece of the adhesive layer having a size of 0.5 mm thick × 6 mm wide × 20 mm long and having a 1 mm long notch in the center of the length direction along the width direction was prepared, and before the application of the energy, the test piece was stretched in the length direction under the conditions of a chuck distance of 10 mm and a tensile speed of 1000 mm / min at 25°C, and the tear strength in the displacement-stress curve measured was 0.22MPa or more and 0.72MPa or less and the breaking elongation is 750 % or more and 2500% or less.

[0011] (2) The adhesive tape according to (1), wherein the adhesive layer has a thickness of 5 μm or more and 30 μm or less.

[0012] (3) The pressure-sensitive adhesive tape according to (1) or (2), wherein the curable resin is at least one of an ester of (meth)acrylic acid and a polyhydric alcohol, a urethane acrylate, and a bisphenol A-based epoxy acrylate.

[0013] (4) The adhesive tape according to any one of (1) to (3) above, wherein the base resin is an acrylic resin.

[0014] (5) The pressure-sensitive adhesive tape according to any one of (1) to (4) above, wherein the pressure-sensitive adhesive layer further contains a crosslinking agent, and the crosslinking agent is an isocyanate-based crosslinking agent.

[0015] (6) The adhesive tape according to any one of (1) to (5) above, which is used when a substrate is fixed on the adhesive layer, the adhesive tape is cut from the substrate to reach partway along the thickness direction of the base material to separate the substrate into individual parts, and then the adhesive tape is stretched in the length direction while the parts are pushed up from the base material side and pulled out from the opposite side of the base material, thereby detaching the parts from the adhesive layer.

[0016] (7) The pressure-sensitive adhesive tape according to any one of (1) to (6), wherein, when the displacement-stress curve is measured after the energy is applied to the test piece, the tear strength is 0.5 MPa or more and 8.0 MPa or less.

[0017] (8) The adhesive tape according to any one of (1) to (7) above, which satisfies the following requirement A: Requirement A: After fixing a silicon substrate to the adhesive tape, a 30 μm thick blade is used to cut the silicon substrate in the thickness direction to half the thickness of the base material at a rotation speed of 30,000 rpm and a processing speed of 60 mm / s to obtain individual silicon chips measuring 6 mm long x 6 mm wide. The adhesion rate of the adhesive layer adhering to the side of the silicon chip must be 5.0% or less. [Effects of the Invention]

[0018] According to the present invention, before energy is applied to the adhesive layer, a test piece of the adhesive layer is prepared, measuring 0.5 mm thick x 6 mm wide x 20 mm long and having a 1 mm long notch in the center of the longitudinal direction along the width direction, and the test piece is stretched in the longitudinal direction at 25°C under conditions of a chuck distance of 10 mm and a tensile speed of 1000 mm / min. The displacement-stress curve measured when the test piece is stretched in the longitudinal direction satisfies the following conditions: tear strength is 0.18 MPa or more and 1.09 MPa or less, and breaking elongation is 200% or more and 2500% or less. Therefore, when components are obtained by cutting a substrate attached to the adhesive tape in the thickness direction to individualize it before energy is applied to the adhesive layer of the adhesive tape, it is possible to accurately suppress or prevent the occurrence of glue adhesion, in which part of the adhesive layer of the adhesive tape adheres to the side surfaces of the obtained components. [Brief explanation of the drawings]

[0019] [Figure 1] 1 is a longitudinal sectional view showing an example of a semiconductor device manufactured using the pressure-sensitive adhesive tape of the present invention. [Figure 2]FIG. 2 is a vertical cross-sectional view illustrating a method for manufacturing the semiconductor device shown in FIG. 1 using the pressure-sensitive adhesive tape of the present invention. [Figure 3] FIG. 2 is a vertical cross-sectional view illustrating a method for manufacturing the semiconductor device shown in FIG. 1 using the pressure-sensitive adhesive tape of the present invention. [Figure 4] FIG. 3 is an enlarged cross-sectional view of the area around the needle located in the area [A] surrounded by the dotted line in FIG. 2. [Figure 5] 1 is a longitudinal cross-sectional view showing an embodiment of a pressure-sensitive adhesive tape. [Figure 6] 6 is a vertical cross-sectional view illustrating a method for producing the pressure-sensitive adhesive tape shown in FIG. 5. FIG. DETAILED DESCRIPTION OF THE INVENTION

[0020] The pressure-sensitive adhesive tape of the present invention will be described in detail below. First, before describing the pressure-sensitive adhesive tape of the present invention, a semiconductor device manufactured using the pressure-sensitive adhesive tape of the present invention will be described.

[0021] <Semiconductor device> Figure 1 is a longitudinal cross-sectional view showing an example of a semiconductor device manufactured using the pressure-sensitive adhesive tape of the present invention. In the following description, the upper side in Figure 1 will be referred to as "top" and the lower side as "bottom." In addition, in each drawing referred to in this specification, dimensions in the left-right direction and / or thickness direction are exaggerated and differ significantly from the actual dimensions.

[0022] The semiconductor device 10 shown in Figure 1 has a semiconductor chip (semiconductor element) 20, an interposer (substrate) 30 that supports the semiconductor chip 20, a plurality of conductive bumps (terminals) 70, and a molded portion (sealing portion) 17 that seals the semiconductor chip 20.

[0023] The semiconductor chip 20 is obtained by dividing the semiconductor substrate 7, which will be described later, into individual pieces, and in this embodiment, a circuit is formed on the upper surface of the semiconductor chip 20, and terminals 21 are formed on the lower surface thereof.

[0024] The interposer 30 is an insulating substrate and is made of various resin materials such as polyimide, epoxy, cyanate, bismaleimide triazine (BT resin), etc. The planar shape of the interposer 30 is usually a quadrangle such as a square or rectangle.

[0025] On the upper surface (one surface) of the interposer 30, terminals 41 made of a conductive metal material such as copper are provided in a predetermined shape.

[0026] Furthermore, a plurality of vias (through holes) (not shown) are formed in the interposer 30 so as to penetrate through the interposer 30 in the thickness direction.

[0027] Each bump 70 has one end (upper end) electrically connected to a part of the terminal 41 through a respective via, and the other end (lower end) protrudes from the lower surface (other surface) of the interposer 30.

[0028] The portion of the bump 70 that protrudes from the interposer 30 is substantially spherical (ball-shaped).

[0029] The bumps 70 are mainly made of a brazing material such as solder, silver brazing, copper brazing, or phosphorus copper brazing.

[0030] Furthermore, terminals 41 are formed on the interposer 30. Terminals 21 of the semiconductor chip 20 are electrically connected to the terminals 41 via connecting portions 81.

[0031] In this embodiment, as shown in FIG. 1, the terminals 21 are configured to protrude from the surface formed on the semiconductor chip 20, and the terminals 41 are also configured to protrude from the interposer 30.

[0032] The gap between the semiconductor chip 20 and the interposer 30 is filled with an underfill material made of various resin materials, and the hardened underfill material forms a sealing layer 80. This sealing layer 80 has the function of improving the bonding strength between the semiconductor chip 20 and the interposer 30 and the function of preventing the intrusion of foreign matter, moisture, etc. into the gap.

[0033] Furthermore, on the upper side of the interposer 30, a molded portion 17 formed to cover the semiconductor chip 20 and the interposer 30 is made of a hardened semiconductor sealing material (sealant), thereby sealing the semiconductor chip 20 within the semiconductor device 10 and preventing the intrusion of foreign matter, moisture, etc. into the semiconductor chip 20.

[0034] 1, the semiconductor chip 20 (semiconductor element) has a semiconductor chip body 23 (semiconductor element body) and terminals 21 protruding from the lower surface of the semiconductor chip body 23. A circuit (not shown) is built into the upper surface of the semiconductor chip body 23, and the semiconductor chip body 23 is mainly made of a semiconductor material such as Si, SiC, GaN, or Ga2O3.

[0035] The semiconductor device 10 and the semiconductor chip 20 having such a configuration are manufactured as follows by, for example, a method for manufacturing a semiconductor device using an adhesive tape.

[0036] <Method of manufacturing a semiconductor device> 2 and 3 are longitudinal cross-sectional views illustrating a method for manufacturing the semiconductor device shown in FIG. 1 using the adhesive tape of the present invention, and FIG. 4 is an enlarged cross-sectional view of the periphery of a needle located in the area [A] surrounded by a dotted line in FIG. 2. In the following description, the upper side in FIGS. 2 to 4 will be referred to as "upper" and the lower side will be referred to as "lower." In addition, in each of the drawings referred to in this specification, the dimensions in the left-right direction and / or thickness direction are exaggerated and differ significantly from the actual dimensions.

[0037] [1A] First, prepare an adhesive tape 100 composed of a laminate having a base material 4 and an adhesive layer 2 laminated on the upper surface of the base material 4. As shown in FIG. 2(a), place a semiconductor substrate 7 (semiconductor wafer) at the center 122 on the adhesive layer 2 and lightly press down to laminate (attach) the semiconductor substrate 7 (attachment process).

[0038] This semiconductor substrate 7 has circuits formed in advance on its upper surface, which will be included in semiconductor chips 20 (semiconductor chip main body portions 23) formed by dicing, and terminals 21 formed in advance on its lower surface, and the semiconductor substrate 7 is attached to the adhesive tape 100 with the upper surface on which the circuits are formed facing the adhesive layer 2. Therefore, the upper surface of the semiconductor substrate 7 on which the circuits are formed, i.e., the uneven surface on which the unevenness based on the circuits is formed, is joined to the adhesive layer 2.

[0039] [2A] Next, as shown in FIG. 2(b), the adhesive tape 100 on which the semiconductor substrate 7 is laminated is placed on a dicer table 200.

[0040] [3A] Next, the outer peripheral portion 121 of the adhesive layer 2 is fixed with a wafer ring 9, and then, using a disc-shaped dicing saw (blade) not shown, the semiconductor substrate 7 as a substrate is cut (diced) in the thickness direction to separate the semiconductor substrate 7, thereby obtaining semiconductor chips 20 as components on the adhesive tape 100 (singulation process; see Figure 2(c)).

[0041] At this time, the adhesive tape 100 has a cushioning effect and prevents cracks, chips, etc. from occurring when the semiconductor substrate 7 is cut.

[0042] 2(c), the cutting of the semiconductor substrate 7 using the blade is performed so as to reach partway through the thickness direction of the base material 4. This ensures that the semiconductor substrate 7 can be divided into individual pieces.

[0043] At this time, the semiconductor substrate 7 is cut while cutting water is supplied to the semiconductor substrate 7 in order to prevent the scattering of dust generated when the semiconductor substrate 7, adhesive layer 2, and base material 4 are cut, and also to prevent the semiconductor substrate 7 from being unnecessarily heated.

[0044] In this main step [3A], an adhesive tape 100 of the present invention is used. That is, when semiconductor chips 20 are obtained as components by cutting semiconductor substrate 7 as a substrate in the thickness direction to separate it in this step [3A], the adhesive tape 100 to be used is one that satisfies the following conditions: a test piece of the adhesive layer is prepared before application of energy to the adhesive layer 2, measuring 0.5 mm in thickness × 6 mm in width × 20 mm in length and having a 1 mm notch in the center in the longitudinal direction along the width direction, and the test piece is elongated in the longitudinal direction at 25°C under conditions of a chuck distance of 10 mm and a tensile speed of 1000 mm / min, and the measured displacement-stress curve shows a tear strength of 0.18 MPa or more and 1.09 MPa or less and a breaking elongation of 200% or more and 2500% or less.

[0045] Therefore, in this process [3A], when the semiconductor substrate 7 is cut in the thickness direction to separate it into individual semiconductor chips 20, it is possible to effectively suppress or prevent the occurrence of glue adhesion on the side surfaces of the semiconductor chips 20 as the obtained components, with a portion of the adhesive layer 2 provided on the adhesive tape 100 being adhered thereto, but a detailed explanation of this will be given later.

[0046] [4A] Next, the adhesive tape 100 with the semiconductor substrate 7 attached and fixed by the wafer ring 9 is transferred from the dicing device (not shown) to a pickup device (not shown), and while the adhesive layer 2 is fixed by the wafer ring 9 at the outer periphery 121, the center 310 is pushed upward against the outer periphery 320 of the table 300, thereby stretching the adhesive tape 100 radially, thereby forming gaps with a fixed distance between the individual semiconductor substrates 7, i.e., the semiconductor chips 20 as components (expanding process; see Figure 2(d)).

[0047] Prior to the next step [5A], energy is applied to the adhesive layer 2 to reduce its adhesive strength to the semiconductor chip 20, but this application of energy to the adhesive layer 2 may be performed after the expanding step in this step [4A] or prior to the expanding step.

[0048] [5A] Next, with a gap formed by the process [4A], the semiconductor chip 20 is picked up on the stage 400 by suction with a vacuum collet or air tweezers (pick-up process; see Figure 2(e)).

[0049] More specifically, the pickup of the semiconductor chip 20 is performed as follows. That is, first, in the step [4A], the expanding step of radially expanding the adhesive tape 100 is performed. After the expanding step of radially expanding the adhesive tape 100 in the step [4A], or prior to the expanding step, energy is applied to the adhesive layer 2 to harden the adhesive layer 2 and reduce the adhesive strength of the adhesive layer 2. Then, the needle 430 (not shown in FIG. 2) is changed from a state in which it is housed in the ejector head 410 as shown in FIG. 4(a) to a state in which it is protruded from the ejector head 410 as shown in FIG. 4(b). That is, the needle 430 is protruded in the thickness direction. As a result, the semiconductor chip 20 attached to the adhesive tape 100 is pushed up using the needle 430, causing it to be peeled off from the adhesive tape 100, and then the semiconductor chip 20 is picked up by suction using a vacuum collet or air tweezers, as shown in Figure 4(c).

[0050] By performing the above-described steps [1A] to [5A], the semiconductor chips 20 are separated (diced) from the semiconductor substrate 7 using the adhesive tape 100. That is, with the semiconductor substrate 7 fixed on the adhesive layer 2 of the adhesive tape 100, the adhesive tape 100 is cut from the semiconductor substrate 7 to reach partway in the thickness direction of the base material 4, and the semiconductor substrate 7 is diced into individual pieces to form a plurality of semiconductor chips 20. Thereafter, energy is applied to the adhesive layer 2 to harden the adhesive layer 2, and in a state where gaps are formed between the semiconductor chips 20 at regular intervals, the semiconductor chips 20 are pushed up from the base material 4 side and pulled out from the opposite side of the base material 4, whereby the semiconductor chips 20 are separated from the adhesive layer 2.

[0051] [6A] Next, the picked-up semiconductor chip 20 is transferred from the vacuum collet or air tweezers to a mounting probe or the like and turned upside down, and then, as shown in Figure 3(a), the terminals 21 of this semiconductor chip 20 and the terminals 41 of the interposer 30 are placed opposite each other via the solder bumps 85 provided on the terminals 41, and the semiconductor chip 20 (semiconductor element) is placed on the interposer 30 (substrate) with the surface of the semiconductor chip 20 on which the terminals 21 are formed facing downward.

[0052] [7A] Next, as shown in FIG. 3(b), the interposer 30 and the semiconductor chip 20 are brought close to each other while the solder bumps 85 interposed between the terminals 21 and 41 are heated.

[0053] As a result, the molten solder bump 85 comes into contact with both the terminal 21 and the terminal 41, and by cooling in this state, a connection portion 81 is formed, and as a result, the terminal 21 and the terminal 41 are electrically connected via the connection portion 81 (mounting process; see Figure 3(c)).

[0054] [8A] Next, an underfill material (sealing material) made of various resin materials is filled into the gap formed between the semiconductor chip 20 and the interposer 30, and then the underfill material is hardened to form a sealing layer 80 made of the hardened underfill material (sealing layer forming process; see Figure 3(d)).

[0055] [9A] Next, a molded portion 17 (sealing portion) is formed on the upper side of the interposer 30 so as to cover the semiconductor chip 20 and the interposer 30, thereby sealing the semiconductor chip 20 between the interposer 30 and the molded portion 17, and a bump 70 electrically connected to a part of the terminal 41 through a via provided in the interposer 30 is formed so as to protrude from the underside of the interposer 30 (see Figure 3(e)).

[0056] Here, sealing with the molded portion 17 is performed, for example, by preparing a molding die having an internal space corresponding to the shape of the molded portion 17 to be formed, and filling the internal space with a powdered semiconductor encapsulating material so as to cover the semiconductor chip 20 and interposer 30 arranged in the internal space. Then, in this state, the semiconductor encapsulating material is heated to harden it, resulting in a hardened product of the semiconductor encapsulating material.

[0057] The semiconductor device manufacturing method having the steps described above produces a semiconductor device 10. More specifically, after performing the steps [1A] to [9A], the steps [4A] to [9A] are repeatedly performed, whereby a plurality of semiconductor devices 10 can be manufactured in a batch from one semiconductor substrate 7.

[0058] The adhesive tape 100 of the present invention, which is used in the method for manufacturing such a semiconductor device 10, will be described below.

[0059] <Adhesive tape 100> 5 is a vertical cross-sectional view showing an embodiment of a pressure-sensitive adhesive tape. In the following description, the upper side in FIG. 5 will be referred to as "top" and the lower side as "bottom."

[0060] In the present invention, the adhesive tape 100 is composed of a laminate including a base material 4 and an adhesive layer 2 laminated on the upper surface (one surface) of the base material 4, and is used to temporarily fix a semiconductor substrate 7 (substrate) and a semiconductor chip 20 (component). The adhesive layer 2 of the adhesive tape 100 contains an adhesive base resin and a curable resin that hardens when energy is applied, and when energy is applied to the adhesive layer 2, the adhesive layer 2 hardens, thereby reducing its adhesive strength. Before energy is applied to the adhesive layer 2, this adhesive tape 100 is prepared by preparing a test piece of the adhesive layer having dimensions of 0.5 mm thick x 6 mm wide x 20 mm long, with a 1 mm long notch in the center along the width direction, and stretching the test piece in the longitudinal direction at 25°C, a chuck distance of 10 mm, and a tensile speed of 1000 mm / min, and measuring the displacement-stress curve.These curves satisfy the following: a tear strength of 0.18 MPa or more and 1.09 MPa or less, and a breaking elongation of 200% or more and 2500% or less.

[0061] Here, in the step [3A], which is performed before applying energy to the adhesive layer 2, when the semiconductor substrate 7 is diced (cut) in the thickness direction using a dicing saw to separate the semiconductor substrate 7 and obtain multiple semiconductor chips 20, the cutting of the semiconductor substrate 7 is usually performed until it reaches halfway in the thickness direction of the base material 4 of the adhesive tape 100, as shown in Figure 2(c), in order to ensure that the semiconductor substrate 7 is separated into individual pieces.

[0062] At this time, in the adhesive tape 100, the adhesive layer 2 is located closer to the semiconductor substrate 7 than the base material 4 and is bonded to the semiconductor substrate 7, so naturally, when the semiconductor substrate 7 is cut, it is cut together with the semiconductor substrate 7 by the dicing saw.

[0063] In addition, the dicing saw (blade) used to cut the semiconductor substrate 7 has an overall disk shape with sharp diamond abrasive grains embedded in its tip (the end of the disk).This dicing saw is rotated while in contact with the semiconductor substrate 7 and moved in a grid pattern along the horizontal and vertical directions of the semiconductor substrate 7 when viewed in a plane, so that the adhesive layer 2 is torn apart by the dicing saw together with the semiconductor substrate 7 and cut in its thickness direction.

[0064] As for the adhesive layer 2 that is cut together with the semiconductor substrate 7 when cutting the semiconductor substrate 7 in the thickness direction, as described above, in the present invention, a test piece of the adhesive layer is prepared that is 0.5 mm thick x 6 mm wide x 20 mm long and has a 1 mm long notch in the center of the length direction along the width direction, and before the energy is applied, the test piece is stretched in the length direction at 25°C, with a chuck distance of 10 mm and a tensile speed of 1000 mm / min, and the displacement-stress curve measured is measured, and the test piece satisfies the following conditions: tear strength of 0.18 MPa or more and 1.09 MPa or less, and breaking elongation of 200% or more and 2500% or less.

[0065] Thus, the tear strength is set within the above range in the test specimen of the adhesive layer 2 having a notch (cutout) as a region torn by the dicing saw. Therefore, even if vibrations from the dicing saw propagate to the semiconductor substrate 7, the occurrence of misalignment of the semiconductor chip 20 due to peeling between the adhesive layer 2 and the semiconductor chip 20 obtained by dividing the semiconductor substrate 7 can be accurately suppressed or prevented. Therefore, the semiconductor chip 20 can be picked up with excellent accuracy in the step [5A]. Furthermore, since the breaking elongation is set within the above range, it can be said that the cut adhesive layer 2 has a property of being difficult to stretch when the adhesive layer 2 is broken, i.e., cut. Therefore, the adhesive layer 2 is cut by the dicing saw into fine particles that are washed away with cutting water, and therefore, the occurrence of adhesive adhesion, in which the adhesive layer 2 adheres to the side surfaces of the semiconductor chips 20 obtained by dividing the semiconductor substrate 7, can be accurately suppressed or prevented.

[0066] The substrate 4 and adhesive layer 2 of such an adhesive tape 100 (dicing tape) will be described in detail below.

[0067] <Base material 4> The base material 4 is mainly made of a resin material, has a sheet shape, and has the function of supporting the adhesive layer 2 provided on this base material 4. It also serves to realize the expansion in the expanding step of step [4A] in which the adhesive tape 100 is expanded in the planar direction. Furthermore, it serves to realize the pushing-up by the needles 430 in the pick-up step of step [5A] in which the individualized semiconductor chips 20 are picked up in a state in which they are pushed up by the needles 430.

[0068] Such resin materials are not particularly limited, but examples thereof include thermoplastic resins such as polyolefin resins, polyvinyl chloride resins, polystyrene resins, polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, polybutylene naphthalate, polyester resins (ester polymers) such as polyester thermoplastic elastomers, polyurethanes, polyimides, polyamides, polyether ketones such as polyether ether ketones, polyether sulfones, fluororesins, silicone resins, cellulose resins, acrylic resins, polyvinyl isoprene, and polycarbonates (carbonate polymers), as well as mixtures of these thermoplastic resins.

[0069] In particular, it is preferable to use polyolefin resin, polyvinyl chloride resin, polystyrene resin, or a mixture thereof as the resin material. By using these resin materials, it is possible to reliably impart extensibility (expandability) to the substrate 4 in the expanding step [4A], and it is also possible to reliably realize the needles 430 pushing up when the individual semiconductor chips 20 are picked up in a pushed-up state by the needles 430 in the step [5A]. Furthermore, it is possible to reliably suppress or prevent contamination of the adhesive tape 100 by cutting waste from the substrate 4 during dicing in the step [3A].

[0070] Such polyolefin resins are not particularly limited, but examples thereof include polyethylene resins such as polypropylene, linear low-density polyethylene, low-density polyethylene, and very low-density polyethylene; polyethylene copolymers such as ethylene-vinyl acetate copolymer (EVA), ethylene-methyl methacrylate copolymer (EMMA), and ethylene-methacrylate copolymer (EMAA); and ionomers such as ethylene-based ionomers crosslinked with zinc ions, sodium ions, or potassium ions; and these may be used alone or in combination of two or more.

[0071] Polyvinyl chloride resins are polymers having multiple repeating units of the group -CH-CHCl-. Specific examples include homopolymers of vinyl chloride, copolymers of vinyl chloride with a copolymerizable vinyl monomer (polymerizable monomer), and post-chlorinated vinyl chloride polymers. While one or a combination of two or more of these can be used, homopolymers are generally used.

[0072] Examples of copolymers of vinyl chloride with copolymerizable vinyl monomers include vinyl chloride-vinyl acetate copolymer, vinyl chloride-ethylene copolymer, and vinyl chloride-acrylic copolymer.

[0073] Furthermore, the polystyrene resin is not particularly limited, but examples thereof include polystyrene, poly(α-methylstyrene), polychlorostyrene, poly(m-propylstyrene), high impact polystyrene (HIPS), acrylonitrile-butadiene-styrene copolymer (ABS), acrylonitrile-styrene copolymer (AS), styrene-methacrylic acid copolymer, styrene-methacrylic acid alkyl ester copolymer, styrene-methacrylic acid glycidyl ester copolymer, styrene-acrylic acid copolymer, styrene-acrylic acid alkyl ester copolymer, styrene-maleic acid copolymer, styrene-fumaric acid copolymer, as well as styrene-butadiene copolymer, styrene-isoprene copolymer, and other styrene-based thermoplastic elastomers, and these may be used alone or in combination of two or more.

[0074] Furthermore, the base material 4 preferably contains a conductive material having electrical conductivity. By including such a conductive material, the conductive material can function as an antistatic agent, thereby effectively suppressing or preventing the generation of static electricity in the semiconductor chips 20 in the singulation step [3A] and the pick-up step [5A].

[0075] In this way, when the substrate 4 contains a conductive material, the surface resistivity of the surface of the substrate 4 opposite to the adhesive layer 2 is 1.0 × 10 13 (Ω / □) or less, and is preferably set to 1.0×10 11 It is more preferable that the resistance be set to Ω / □ or less, which makes it possible to more accurately suppress or prevent the generation of static electricity in the semiconductor chips 20 during the singulation process [3A] and the pick-up process [5A].

[0076] The conductive material is not particularly limited as long as it is conductive, but examples thereof include surfactants, permanently antistatic polymers (IDPs), metal materials, metal oxide materials, and carbon-based materials, and one or more of these may be used in combination.

[0077] Among these surfactants, examples include anionic surfactants, cationic surfactants, nonionic surfactants, and amphoteric surfactants.

[0078] As the permanently antistatic polymer (IDP), any IDP such as polyether and polyolefin block polymer series, polyesteramide series, polyesteramide, polyetheresteramide, polyurethane series, etc. can be used.

[0079] Examples of metal materials include gold, silver, copper or silver-coated copper, and nickel, and powders of these metals are preferably used.

[0080] Examples of metal oxide materials include indium tin oxide (ITO), indium oxide (IO), antimony tin oxide (ATO), indium zinc oxide (IZO), tin oxide (SnO2), and zinc oxide (ZnO), and powders of these metal oxides are preferably used.

[0081] Further, examples of carbon-based materials include carbon black, carbon nanotubes such as single-walled carbon nanotubes and multi-walled carbon nanotubes, carbon nanofibers, CN nanotubes, CN nanofibers, BCN nanotubes, BCN nanofibers, and graphene.

[0082] Among these, the conductive material is preferably at least one of surfactants, permanently antistatic polymers (IDPs), metal oxide materials, and carbon black. These materials have a small temperature dependency of resistivity, so that even if the base material 4 is heated when dicing the semiconductor substrate 7 in the step [3A], the change in surface resistivity can be reduced.

[0083] In addition, when preventing the generation of static electricity in the semiconductor chip 20 without incorporating a conductive material into the base material 4, an antistatic layer containing a conductive material may be formed on the surface opposite to the adhesive layer 2. This makes it possible to obtain the same effect as when the base material 4 contains a conductive material.

[0084] Furthermore, the substrate 4 may contain a softener such as mineral oil, a filler such as calcium carbonate, silica, talc, mica, or clay, an antioxidant, a light stabilizer, a lubricant, a dispersant, a neutralizer, a colorant, or the like.

[0085] Furthermore, when the base material 4 contains constituent materials other than the resin material as the main material, the content of the resin material in the base material 4 is preferably 50% by weight or more and 95% by weight or less, and more preferably 65% ​​by weight or more and 90% by weight or less.

[0086] Furthermore, the thickness of the base material 4 is preferably, for example, 70 μm or more and 150 μm or less, and more preferably 80 μm or more and 140 μm or less. When the thickness of the base material 4 is within this range, the base material 4 can more reliably perform its function, and the dicing of the semiconductor substrate 7 in the step [3A] can be performed with excellent workability. Furthermore, in the step [5A], the semiconductor chips 20 are picked up with the needles 430 pushed up from the individual semiconductor chips 20, and this picking up can be performed with excellent accuracy.

[0087] The substrate 4 may have a functional group, such as a carboxyl group, a hydroxyl group, or an amino group, exposed on its surface, which is reactive with the constituent material contained in the adhesive layer 2.

[0088] The base material 4 may also be configured as a laminate (multilayer body) in which a plurality of layers made of different resin materials are laminated.

[0089] <Adhesive layer 2> The adhesive layer 2 adheres to and supports the semiconductor substrate 7 while accurately suppressing or preventing the adhesive layer 2 from adhering to the side surfaces of the semiconductor chips 20 when the semiconductor substrate 7 is diced in the step [3A], and in the step [4A], energy is applied to the adhesive layer 2 to harden the adhesive layer 2, so that the semiconductor chips 20 obtained by dicing the semiconductor substrate 7 have enough adhesiveness to be picked up in the step [5A].

[0090] Such adhesive layer 2 is made of a resin composition containing (1) a base resin having adhesive properties and (2) a curable resin that cures the adhesive layer 2 as main materials.

[0091] In the present invention, in order to perform dicing of the semiconductor substrate 7 with high precision in the step [3A] while preventing glue from adhering to the side surfaces of the semiconductor chip 20, the type and content of each component (constituent material) contained in the resin composition constituting the adhesive layer 2 are set so that the tear strength in the displacement-stress curve is set to a range of 0.18 MPa or more and 1.09 MPa or less, and the breaking elongation is set to a range of 200% or more and 2500% or less.

[0092] Each component contained in this resin composition will be described in detail below. (1) Base resin The base resin has adhesiveness and is contained in the resin composition in order to impart adhesiveness to the semiconductor substrate 7 to the adhesive layer 2 .

[0093] Examples of such base resins include known adhesive layer components such as acrylic resins (adhesives), silicone resins (adhesives), polyester resins (adhesives), polyvinyl acetate resins (adhesives), polyvinyl ether resins (adhesives), styrene elastomer resins (adhesives), polyisoprene resins (adhesives), polyisobutylene resins (adhesives), and urethane resins (adhesives). Among these, acrylic resins are preferred. By using an acrylic resin as the base resin, the tear strength and breaking elongation in the displacement-stress curve based on the test specimen composed of the adhesive layer 2 can be relatively easily set within the above-mentioned ranges. Furthermore, acrylic resins have excellent heat resistance and are relatively easily and inexpensively available, making them a preferred base resin.

[0094] Acrylic resins are those whose base polymer is a polymer (homopolymer or copolymer) whose main monomer component is (meth)acrylic acid ester.

[0095] The (meth)acrylic acid ester is not particularly limited, but examples thereof include methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, isopropyl (meth)acrylate, butyl (meth)acrylate, isobutyl (meth)acrylate, s-butyl (meth)acrylate, t-butyl (meth)acrylate, pentyl (meth)acrylate, hexyl (meth)acrylate, heptyl (meth)acrylate, octyl (meth)acrylate, isooctyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, nonyl (meth)acrylate, isononyl (meth)acrylate, and decyl (meth)acrylate. Examples of suitable acrylates include alkyl (meth)acrylates such as methyl (meth)acrylate, isodecyl (meth)acrylate, undecyl (meth)acrylate, dodecyl (meth)acrylate, tridecyl (meth)acrylate, tetradecyl (meth)acrylate, pentadecyl (meth)acrylate, hexadecyl (meth)acrylate, heptadecyl (meth)acrylate, and octadecyl (meth)acrylate; cycloalkyl (meth)acrylates such as cyclohexyl (meth)acrylate; and aryl (meth)acrylates such as phenyl (meth)acrylate. These acrylates may be used alone or in combination. Among these, alkyl (meth)acrylates such as methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, and octyl (meth)acrylate are preferred. Alkyl (meth)acrylates are particularly heat-resistant and can be obtained relatively easily and inexpensively. Furthermore, by including an alkyl (meth)acrylate ester as the base resin, the magnitudes of the tear strength and breaking elongation in the displacement-stress curve based on the test piece composed of the adhesive layer 2 can each be set relatively easily within the above ranges.

[0096] In this specification, the term "(meth)acrylic acid ester" is used to include both acrylic acid ester and methacrylic acid ester.

[0097] The acrylic resin used may contain a copolymerizable monomer as a monomer component constituting the polymer, if necessary, for the purpose of improving properties such as cohesive strength and heat resistance.

[0098] Such copolymerizable monomers are not particularly limited, and examples thereof include hydroxyl group-containing monomers such as 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, and 6-hydroxyhexyl (meth)acrylate; epoxy group-containing monomers such as glycidyl (meth)acrylate; carboxyl group-containing monomers such as (meth)acrylic acid, itaconic acid, maleic acid, fumaric acid, crotonic acid, and isocrotonic acid; acid anhydride group-containing monomers such as maleic anhydride and itaconic anhydride; amide monomers such as (meth)acrylamide, N,N-dimethyl(meth)acrylamide, N-butyl(meth)acrylamide, N-methylol(meth)acrylamide, N-methylolpropane(meth)acrylamide, N-methoxymethyl(meth)acrylamide, and N-butoxymethyl(meth)acrylamide; amino group-containing monomers such as aminoethyl (meth)acrylate, N,N-dimethylaminoethyl (meth)acrylate, and t-butylaminoethyl (meth)acrylate; Examples of such monomers include cyano group-containing monomers such as (meth)acrylonitrile, olefin-based monomers such as ethylene, propylene, isoprene, butadiene, and isobutylene, styrene-based monomers such as styrene, α-methylstyrene, and vinyltoluene, vinyl ester-based monomers such as vinyl acetate and vinyl propionate, vinyl ether-based monomers such as methyl vinyl ether and ethyl vinyl ether, halogen atom-containing monomers such as vinyl chloride and vinylidene chloride, alkoxy group-containing monomers such as methoxyethyl (meth)acrylate and ethoxyethyl (meth)acrylate, and monomers having a nitrogen atom-containing ring such as N-vinyl-2-pyrrolidone, N-methylvinylpyrrolidone, N-vinylpyridine, N-vinylpiperidone, N-vinylpyrimidine, N-vinylpiperazine, N-vinylpyrazine, N-vinylpyrrole, N-vinylimidazole, N-vinyloxazole, N-vinylmorpholine, N-vinylcaprolactam, and N-(meth)acryloylmorpholine. These monomers may be used alone or in combination of two or more.

[0099] The content of these copolymerizable monomers is preferably 40% by weight or less, and more preferably 10% by weight or less, based on the total monomer components constituting the acrylic resin.

[0100] The copolymerizable monomer may be contained at the terminal of the main chain of the polymer constituting the acrylic resin, or may be contained in the main chain, or may be contained both at the terminal of the main chain and in the main chain.

[0101] Furthermore, the copolymerizable monomer may contain a polyfunctional monomer for the purpose of crosslinking between polymers.

[0102] Examples of polyfunctional monomers include 1,6-hexanediol (meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, neopentyl glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate, glycerin di(meth)acrylate, epoxy (meth)acrylate, polyester (meth)acrylate, urethane (meth)acrylate, divinylbenzene, butyl di(meth)acrylate, and hexyl di(meth)acrylate, and these can be used alone or in combination of two or more.

[0103] Furthermore, ethylene-vinyl acetate copolymers and vinyl acetate polymers can also be used as copolymerizable monomer components.

[0104] Such an acrylic resin (polymer) can be produced by polymerizing a single monomer component or a mixture of two or more monomer components. The polymerization of these monomer components can be carried out using a polymerization method such as solution polymerization, emulsion polymerization, bulk polymerization, or suspension polymerization.

[0105] The acrylic resin preferably has a low content of low-molecular-weight substances from the viewpoint of preventing contamination of the semiconductor substrate 7 and the like by the acrylic resin when dicing the semiconductor substrate 7 in the step [3A]. In this case, the weight-average molecular weight of the acrylic resin is preferably set to be 300,000 or more and 5,000,000 or less, more preferably 400,000 or more and 4,000,000 or less, and even more preferably 500,000 or more and 1,500,000 or less. Note that if the weight-average molecular weight of the acrylic resin is less than 300,000, depending on the type of monomer component, the ability to prevent contamination of the semiconductor substrate 7 and the like may be reduced, and as a result, adhesive residue may be left behind when the semiconductor chip 20 is peeled off.

[0106] The acrylic resin (base resin) used preferably has a glass transition point of −70° C. or higher and −50° C. or lower, more preferably −65° C. or higher and −55° C. or lower. By using an acrylic resin having a glass transition point within this range as the base resin, the magnitudes of the tear strength and breaking elongation in the displacement-stress curve based on the test piece composed of the adhesive layer 2 can be set relatively easily within the above ranges.

[0107] The acrylic resin preferably has a functional group (reactive functional group) that is reactive with a crosslinking agent or a photopolymerization initiator, such as a hydroxyl group or a carboxyl group (particularly a hydroxyl group). This allows the crosslinking agent or photopolymerization initiator to be linked to the acrylic resin, which is a polymer component, thereby effectively suppressing or preventing leakage of the crosslinking agent or photopolymerization initiator from the adhesive layer 2. As a result, the adhesiveness of the adhesive layer 2 to the semiconductor substrate 7 is reliably reduced by the energy ray irradiation in the step [4A].

[0108] (2) Curing resin The curable resin has a curing property such that it is cured by irradiation with energy rays, for example. As a result of this curing, the base resin is incorporated into the crosslinked structure of the curable resin, and as a result, the adhesive strength of the adhesive layer 2 decreases.

[0109] As such a curable resin, for example, a low molecular weight compound having at least two polymerizable carbon-carbon double bonds as functional groups in the molecule, which are capable of three-dimensional crosslinking by irradiation with energy rays such as ultraviolet rays or electron beams, is used. Specific examples include trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, tetramethylolmethane tetra(meth)acrylate, tetraethylene glycol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, neopentyl glycol di(meth)acrylate, dipentaerythritol hexa(meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, and the like. acrylate, 1,4-butylene glycol di(meth)acrylate, polyethylene glycol di(meth)acrylate, esters of (meth)acrylic acid with polyhydric alcohols such as glycerin di(meth)acrylate, ester acrylate oligomers, cyanurate compounds having a carbon-carbon double bond-containing group such as 2-propenyl-di-3-butenyl cyanurate, tris(2-acryloxyethyl)isocyanurate, tris(2-methacryloxyethyl)isocyanurate, 2-hydroxyethyl Examples of suitable compounds include isocyanurate compounds having a carbon-carbon double bond-containing group, such as bis(2-acryloxyethyl)isocyanurate, bis(2-acryloxyethyl)2-[(5-acryloxyhexyl)oxy]ethyl isocyanurate, tris(1,3-diacryloxy-2-propyl-oxycarbonylamino-n-hexyl)isocyanurate, tris(1-acryloxyethyl-3-methacryloxy-2-propyl-oxycarbonylamino-n-hexyl)isocyanurate, and tris(4-acryloxy-n-butyl)isocyanurate; commercially available oligoester acrylates; aromatic and aliphatic urethane acrylates; and bisphenol A-based epoxy acrylates. These compounds may be used alone or in combination. Among these, at least one of esters of (meth)acrylic acid and polyhydric alcohols, urethane acrylates, and bisphenol A-based epoxy acrylates is preferred.This allows the curable resin to be more reliably cured by applying energy, i.e., by irradiating it with energy rays. Also, the magnitudes of the tear strength and the breaking elongation in the displacement-stress curve based on the test piece made of the adhesive layer 2 can be set relatively easily within the above ranges.

[0110] Furthermore, although the curable resin is not particularly limited, it is preferable that two or more curable resins with different weight-average molecular weights are mixed. By using such a curable resin, the degree of crosslinking of the resin due to energy ray irradiation can be easily controlled. Furthermore, as such a curable resin, for example, a mixture of a first curable resin and a second curable resin having a weight-average molecular weight larger than that of the first curable resin may be used.

[0111] When the curable resin is a mixture of a first curable resin and a second curable resin, the weight-average molecular weight of the first curable resin is preferably about 100 to 1,000, and more preferably about 200 to 500. The weight-average molecular weight of the second curable resin is preferably about 1,000 to 30,000, more preferably about 1,000 to 10,000, and even more preferably about 2,000 to 5,000. The number of functional groups in the first curable resin is preferably 1 to 5, and the number of functional groups in the second curable resin is preferably 6 or more. By satisfying this relationship, the above-mentioned effects can be more significantly exhibited.

[0112] The curable resin is preferably blended in an amount of 30 to 200 parts by weight, more preferably 50 to 140 parts by weight, per 100 parts by weight of the base resin, which allows both the curable resin and the base resin to reliably exhibit the functions that are exhibited by adding the curable resin and the base resin to the resin composition.

[0113] When a double-bond-introduced acrylic resin is used as the acrylic resin described above, that is, when one having a carbon-carbon double bond in a side chain, in the main chain, or at the end of the main chain is used, the addition of this curable resin to the resin composition may be omitted. This is because, when the acrylic resin is a double-bond-introduced acrylic resin, the adhesive layer 2 is cured by irradiation with energy rays due to the function of the carbon-carbon double bond contained in the double-bond-introduced acrylic resin, and as a result, the adhesive strength of the adhesive layer 2 is reduced.

[0114] (3) Photopolymerization initiator Furthermore, the adhesive layer 2 loses adhesion to the semiconductor substrate 7 when irradiated with energy rays. When ultraviolet rays or the like are used as the energy rays, it is preferable that the resin composition constituting the adhesive layer 2 contains a photopolymerization initiator to facilitate the initiation of polymerization of the curable resin.

[0115] Examples of the photopolymerization initiator include 2,2-dimethoxy-1,2-diphenylethan-1-one, 1-[4-(2-hydroxyethoxy)-phenyl]-2-hydroxy-2-methyl-1-propan-1-one, 2-hydroxy-1-{4-[4-(2-hydroxy-2-methyl-propionyl)-benzyl]phenyl}-2-methyl-propan-1-one, benzyl diphenyl sulfide, tetramethylthiuram monosulfide, 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl) ketone, α-hydroxy-α,α'- Dimethylacetophenone, 2-methyl-2-hydroxypropiophenone, 1-hydroxycyclohexyl phenyl ketone, Michler's ketone, acetophenone, methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1-[4-(methylthio)-phenyl]-2-morpholinopropane-1, benzoin methyl ether, benzoin ethyl ether, benzoin propyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzyl, benzoin, Dibenzyl, α-hydroxycyclohexyl phenyl ketone, benzil dimethyl ketal, 2-hydroxymethylphenylpropane, 2-naphthalenesulfonyl chloride, 1-phenone-1,1-propanedione-2-(o-ethoxycarbonyl)oxime, benzophenone, benzoylbenzoic acid, 4,4'-dimethylaminobenzophenone, 4,4'-diethylaminobenzophenone, 4,4'-dichlorobenzophenone, 3,3'-dimethyl-4-methoxybenzophenone, o-acryloxybenzophenone, p-acryloxybenzophenone Benzophenone-4-carboxylic acid esters of acrylates such as benzophenone, o-methacryloxybenzophenone, p-methacryloxybenzophenone, p-(meth)acryloxyethoxybenzophenone, 1,4-butanediol mono(meth)acrylate, 1,2-ethanediol mono(meth)acrylate, 1,8-octanediol mono(meth)acrylate, thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,Examples include 4-diethylthioxanthone, 2,4-diisopropylthioxanthone, azobisisobutyronitrile, β-chloroanthraquinone, camphorquinone, halogenated ketones, acylphosphinoxides, acylphosphonates, polyvinylbenzophenone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, 2-ethylanthraquinone, t-butylanthraquinone, and 2,4,5-triarylimidazole dimers, and these can be used alone or in combination of two or more.

[0116] The photopolymerization initiator is preferably blended in an amount of 0.1 to 50 parts by weight, and more preferably 0.5 to 10 parts by weight, per 100 parts by weight of the base resin. By adjusting the blending amount of the photopolymerization initiator as described above, the photopolymerization initiator can reliably exhibit the function exhibited by adding the photopolymerization initiator to the resin composition.

[0117] (4) Crosslinking agent Furthermore, the resin composition constituting the adhesive layer 2 may contain a crosslinking agent. By containing a crosslinking agent, the adhesive layer 2 can be adjusted to have an appropriate hardness. Furthermore, based on the test piece constituted by the adhesive layer 2, the magnitudes of the tear strength and breaking elongation in the displacement-stress curve can be set relatively easily within the above ranges.

[0118] The crosslinking agent is not particularly limited, but examples thereof include isocyanate-based crosslinking agents, epoxy-based crosslinking agents, urea resin-based crosslinking agents, methylol-based crosslinking agents, chelate-based crosslinking agents, aziridine-based crosslinking agents, melamine-based crosslinking agents, polyvalent metal chelate-based crosslinking agents, acid anhydride-based crosslinking agents, polyamine-based crosslinking agents, carboxyl group-containing polymer-based crosslinking agents, etc. Among these, isocyanate-based crosslinking agents are preferred.

[0119] The isocyanate-based crosslinking agent is not particularly limited, but examples thereof include polyisocyanate compounds of polyvalent isocyanates, trimers of polyisocyanate compounds, trimers of isocyanate-terminated compounds obtained by reacting a polyisocyanate compound with a polyol compound, and blocked polyisocyanate compounds in which isocyanate-terminated urethane prepolymers are blocked with phenol, oximes, or the like.

[0120] Examples of polyisocyanates include 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1,4-xylylene diisocyanate, diphenylmethane-4,4'-diisocyanate, diphenylmethane-2,4'-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4'-diisocyanate, dicyclohexylmethane-2,4'-diisocyanate, 4,4'-diphenylether diisocyanate, 4,4'-[2,2-bis(4-phenoxyphenyl)propane]diisocyanate, and 2,2,4-trimethyl-hexamethylene diisocyanate. These may be used alone or in combination of two or more. Among these, at least one polyisocyanate selected from the group consisting of 2,4-tolylene diisocyanate, diphenylmethane-4,4'-diisocyanate, and hexamethylene diisocyanate is preferred.

[0121] The crosslinking agent is preferably blended in an amount of 0.01 to 30 parts by weight, and more preferably 0.1 to 20 parts by weight, per 100 parts by weight of the base resin. By adjusting the blending amount of the crosslinking agent as described above, the crosslinking agent can reliably exhibit the function exhibited by adding the crosslinking agent to the resin composition.

[0122] (5) Plasticizers It is preferable that a plasticizer be contained in the adhesive layer 2, i.e., the resin composition, because the plasticizer improves the flexibility of the adhesive layer 2, whose adhesive strength decreases when energy is applied, and as a result, the magnitudes of the tear strength and breaking elongation in the displacement-stress curve based on the test piece made of the adhesive layer 2 can be relatively easily set within the above ranges.

[0123] The plasticizer is not particularly limited, but examples thereof include phthalate ester plasticizers such as DOP (dioctyl phthalate), DBP (dibutyl phthalate), DIBP (diisobutyl phthalate), and DHP (diheptyl phthalate), aliphatic dibasic acid ester plasticizers such as DOA (di-2-ethylhexyl adipate), DIDA (diisodecyl adipate), and DOS (di-2-ethylhexyl sebacate), aromatic carboxylic acid ester plasticizers such as ethylene glycol benzoates, trimellitic acid ester plasticizers such as TOTM (trioctyl trimellitate), and adipate ester plasticizers, and these may be used alone or in combination of two or more.

[0124] The content of the plasticizer in the adhesive layer 2, i.e., the resin composition, is not particularly limited, but is preferably 0.1 to 5.0 parts by weight, and more preferably 0.5 to 3.0 parts by weight, per 100 parts by weight of the base resin. This reliably improves the flexibility of the adhesive layer 2. Therefore, the magnitudes of the tear strength and breaking elongation in the displacement-stress curve based on the test piece composed of the adhesive layer 2 can be more easily set within the above ranges.

[0125] (6) Other ingredients Furthermore, the resin composition constituting the adhesive layer 2 may contain, in addition to the above-mentioned components (1) to (5), at least one of other components selected from the group consisting of conductive materials, tackifiers, antioxidants, adhesion adjusters, fillers, colorants, flame retardants, softeners, antioxidants, surfactants, etc.

[0126] Among these, the conductive material is not particularly limited as long as it has conductivity, but the same conductive materials as those described as the conductive material contained in the base material 4 can be used.

[0127] By including such a conductive material, the conductive material functions as an antistatic agent, thereby effectively suppressing or preventing the generation of static electricity in the semiconductor chip 20 during the singulation process [3A] and the pick-up process [5A].

[0128] When a conductive material is contained in either the base material 4 or the adhesive layer 2, it is preferable that the conductive material be contained in the base material 4. This makes it possible to more reliably suppress or prevent the generation of static electricity on the semiconductor chip 20 without having to reliably attach a conductive material to the semiconductor chip 20.

[0129] Among these, the tackifier is not particularly limited, but examples thereof include rosin resins, terpene resins, coumarone resins, phenolic resins, aliphatic petroleum resins, aromatic petroleum resins, and aliphatic-aromatic copolymer petroleum resins, and one or more of these may be used in combination.

[0130] By appropriately selecting the type and content of each of the components (1) to (6) contained in the adhesive layer 2, of which components (1) and (2) are essential components, as described above, the adhesive layer 2 adheres to and supports the semiconductor substrate 7 when dicing the semiconductor substrate 7 in the step [3A], and by applying energy to the adhesive layer 2 to harden the adhesive layer 2 in the step [4A], the semiconductor chips 20 obtained by dicing the semiconductor substrate 7 can be made to have enough adhesiveness to be able to be picked up in the step [5A], and the magnitudes of the tear strength and fracture elongation in the displacement-stress curve based on the test piece made of the adhesive layer 2 can be set within the above-mentioned ranges.

[0131] As described above, before energy is applied to the adhesive layer 2, a test piece of the adhesive layer 2 having dimensions of 0.5 mm thick x 6 mm wide x 20 mm long, with a 1 mm notch in the width direction at the center of the longitudinal direction, is prepared, and this test piece is stretched in the longitudinal direction at 25°C with a chuck distance of 10 mm and a tensile speed of 200 mm / min.The displacement-stress curve measured shows that the tear strength is 0.18 MPa or more and 1.09 MPa or less, and the breaking elongation is 200% or more and 2500% or less; however, the tear strength is preferably 0.20 MPa or more and 1.00 MPa or less, and more preferably 0.22 MPa or more and 0.80 MPa or less. By setting the magnitude of the tear strength within the above range, even if vibrations from the dicing saw are transmitted to the semiconductor substrate 7 in step [3A], it is possible to more accurately suppress or prevent misalignment of the semiconductor chip 20 due to peeling between the semiconductor chip 20, into which the semiconductor substrate 7 has been divided, and the adhesive layer 2.

[0132] Furthermore, when the displacement-stress curve is measured in the same manner as above after applying energy to the test piece of adhesive layer 2, the tear strength is preferably 0.5 MPa or more and 8.0 MPa or less, and more preferably 1.0 MPa or more and 6.0 MPa or less. This means that the tear strength is high, and therefore the pick-up ability is improved when picking up the individual semiconductor chips 20 in a state where they are pushed up by needles 430 in step [5A].

[0133] Furthermore, when an unformed test piece without a notch is prepared as a test piece of the adhesive layer 2, and a displacement-stress curve is measured using this unformed test piece (adhesive layer 2) before applying energy to the unformed test piece, the tear strength Y [MPa] is preferably 0.10 MPa or more and 2.00 MPa or less, and more preferably 0.20 MPa or more and 1.10 MPa or less. This allows the adhesive layer 2 to more reliably follow the front (back) surface of the semiconductor substrate 7 when attaching (temporarily fixing) the semiconductor substrate 7 to the adhesive tape 100 in the step [1A], thereby improving the adhesion of the adhesive tape 100 (adhesive layer 2) to the semiconductor substrate 7. Therefore, in the step [3A], not only is adhesive adhesion to the side surface of the semiconductor substrate 7 prevented during dicing of the semiconductor substrate 7, but also chip flying of the semiconductor chip 20 due to dicing of the semiconductor substrate 7 can be reliably suppressed. Furthermore, the dicing of the semiconductor substrate 7 in the step [3A] is carried out while supplying cutting water to the semiconductor substrate 7, and the cutting water containing cutting debris generated by dicing adheres to the front (back) surface of the semiconductor chip 20, which has the effect of further suppressing contamination of the front (back) surface of the semiconductor chip 20.

[0134] As described above, the breaking elongation may be 200% or more and 2500% or less, preferably 300% or more and 2500% or less, and more preferably 500% or more and 2000% or less. By setting the breaking elongation within this range, in step [3A], the adhesive layer 2 can be cut into finer particles with a dicing saw and more reliably washed away with cutting water, thereby more reliably suppressing or preventing the adhesive layer 2 from adhering to the side surfaces of the semiconductor chips 20 obtained by dividing the semiconductor substrate 7.

[0135] As described above, by setting the breaking elongation within the above range, it is possible to suppress the occurrence of adhesive adhesion, whereby the adhesive layer 2 adheres to the side surfaces of the semiconductor chip 20. The degree of adhesive adhesion is specifically set as follows. That is, a silicon substrate is fixed to the adhesive tape 100, and then, using a 30 μm thick blade, the silicon substrate is cut in the thickness direction to half the thickness of the base material 4 at a rotation speed of 30,000 rpm and a processing speed of 60 mm / s to obtain individual silicon chips measuring 6 mm long x 6 mm wide. The adhesion rate of the adhesive layer 2 adhering to the side surfaces of the silicon chips is preferably set to 5.0% or less, more preferably 0.0%. This can be said to suitably suppress the occurrence of adhesive adhesion on the side surfaces of the semiconductor chips 20 obtained by singulating the semiconductor substrate 7.

[0136] Furthermore, in the step [1A], when attaching (temporarily fixing) the semiconductor substrate 7 to the adhesive tape 100, it is preferable that the adhesive layer 2 can be attached to the surface (back surface) of the semiconductor substrate 7 with excellent conformability. The degree of conformability, i.e., the conformability (%) of the adhesive layer 2 to the protrusions when a silicon wafer having a plurality of protrusions (convex portions) on its surface, each 5 μm high, 50 μm wide, and with a pitch of 30 μm, arranged in a grid pattern, is prepared, the silicon wafer is placed on a stage with the protrusions facing up, and the adhesive tape 100 is attached to the surface of the silicon wafer by pressing a roller having a diameter of 35 mm and a width of 400 mm against the surface at a pressure of 0.5 MPa with the stage heated to 25°C, is preferably 70% or more, and more preferably 80% or more. When the conformality (%) is equal to or greater than the lower limit, it can be said that the adhesive layer 2 has excellent conformability and conforms to the irregularities caused by the provision of circuits on the front (rear) surface of the semiconductor substrate 7. Therefore, the adhesion of the adhesive tape 100 (adhesive layer 2) to the semiconductor substrate 7 can be improved.

[0137] The thickness of the adhesive layer 2 is not particularly limited, but is preferably 5 μm to 30 μm, more preferably 5 μm to 15 μm. By setting the thickness of the adhesive layer 2 within this range, the adhesive layer 2 can exhibit good adhesive strength to the semiconductor substrate 7 in the singulation step [3A] and can also have adhesiveness to the extent that good peelability can be exhibited between the adhesive layer 2 and the semiconductor substrate 7 in the pick-up step [5A].

[0138] The adhesive layer 2 may be formed as a laminate (multilayer body) in which a plurality of layers made of different resin compositions are laminated.

[0139] As described above, in the adhesive tape 100 having a configuration in which the adhesive layer 2 is laminated on the substrate 4, when the adhesive tape 100 is viewed in a plan view, bubbles formed at the interface between the substrate 4 and the adhesive layer 2 have an area of ​​100 μm 2 The number of the above is 15.0 pieces / mm 2 It is preferable that the number of particles is 0.01 particles / mm or less. 2 More than 7.0 pieces / mm 2 It is more preferable that the number is 0.1 or less per mm. 2 More than 2.0 pieces / mm 2 It is more preferable that the area is 100 μm or less by controlling the number of bubbles formed at the interface between the substrate 4 and the adhesive layer 2. 2 By setting the number of the above items as described above, it is possible to more accurately suppress or prevent adhesive residue from being left on the semiconductor chip 20 when the semiconductor chip 20 is picked up and the adhesive tape 100 is peeled off from the semiconductor chip 20 in step [5A].

[0140] Next, the adhesive tape 100 having such a configuration can be produced, for example, as follows.

[0141] <Adhesive tape manufacturing method> Fig. 6 is a vertical cross-sectional view for explaining a method for producing the adhesive tape shown in Fig. 5. In the following explanation, the upper side in Fig. 6 will be referred to as "top" and the lower side as "bottom".

[0142] [1B] First, a substrate 4 is prepared (see FIG. 6(a)). The method for producing the substrate 4 is not particularly limited, and examples thereof include common molding methods such as extrusion molding methods such as a calendar method, an inflation extrusion method, and a T-die extrusion method, and a wet casting method. When the substrate 4 is formed as a laminate, molding methods such as a co-extrusion method and a dry lamination method are used as the method for producing the substrate 4 having such a configuration.

[0143] The substrate 4 can be used without stretching, or may be subjected to uniaxial or biaxial stretching treatment as required.

[0144] [2B] Next, an adhesive layer 2 is formed on the upper surface of the substrate 4 (see FIG. 6(b)). The surface (upper surface) of the substrate 4 may be subjected to a surface treatment such as corona treatment, chromic acid treatment, matte treatment, ozone exposure treatment, flame exposure treatment, high-voltage shock exposure treatment, ionizing radiation treatment, primer treatment, or anchor coat treatment in order to improve adhesion between the substrate 4 and the adhesive layer 2.

[0145] The adhesive layer 2 can also be obtained by applying or spraying onto the substrate 4 a liquid material in the form of a varnish, which is made by dissolving the resin composition that is the constituent material of the adhesive layer 2 in a solvent, and then evaporating the solvent.

[0146] The solvent is not particularly limited, but examples thereof include methyl ethyl ketone, acetone, toluene, ethyl acetate, dimethyl formaldehyde, etc., and one or more of these can be used in combination.

[0147] Furthermore, the liquid material can be applied or sprayed onto the substrate 4 using methods such as die coating, curtain die coating, gravure coating, comma coating, bar coating, and lip coating.

[0148] [3B] Next, a portion of the adhesive layer 2 formed on the substrate 4 is removed in a circular shape while leaving the substrate 4 in the thickness direction of the adhesive layer 2 so that the central side and the peripheral side are separated, thereby forming the adhesive layer 2 having a central portion 122 and a peripheral portion 121 (see Figure 6(c)).

[0149] An example of a method for removing a portion of the adhesive layer 2 in a circular shape is to punch out a portion surrounding the area to be removed, and then remove the adhesive layer 2 located in the punched-out area.

[0150] The region to be removed can be punched out using, for example, a method using a roll-shaped mold or a method using a press mold. Among these, the method using a roll-shaped mold, which allows continuous production of the pressure-sensitive adhesive tape 100, is preferred.

[0151] In this step, a part of the adhesive layer 2 is punched out into a ring shape (circular shape) to form the central part 122 and the outer periphery 121, but the shape of the punched part of the adhesive layer 2 may be any shape as long as it is a shape that allows the outer periphery 121 of the adhesive layer 2 to be fixed with a wafer ring in the above-mentioned method for manufacturing a semiconductor device. Specifically, examples of the punched shape include the above-mentioned circular shape, as well as oval shapes such as an ellipse and a bale shape, and polygonal shapes such as a square shape and a pentagon.

[0152] [4B] Next, a separator 1 is laminated on the adhesive layer 2 formed on the substrate 4, thereby obtaining an adhesive tape 100 in which the adhesive layer 2 is covered with the separator 1 (see FIG. 6(d)).

[0153] The method for laminating the separator 1 on the adhesive layer 2 is not particularly limited, and may be, for example, a lamination method using a roll or a lamination method using a press. Among these, the lamination method using a roll is preferred from the viewpoint of productivity, which allows for continuous production.

[0154] The separator 1 is not particularly limited, but examples thereof include a polypropylene film, a polyethylene film, and a polyethylene terephthalate film.

[0155] Furthermore, the separator 1 may have its surface subjected to a release treatment so that it is peeled off when the pressure-sensitive adhesive tape 100 is used. Examples of release treatment include coating the surface of the separator 1 with a release agent and providing fine irregularities on the surface of the separator 1. Examples of release agents include silicone-based, alkyd-based, and fluorine-based agents.

[0156] Through the steps described above, the adhesive tape 100 covered with the separator 1 can be formed.

[0157] The adhesive tape 100 covered with the separator 1 manufactured in this embodiment is used after peeling the adhesive tape 100 from the separator 1 in the method for manufacturing a semiconductor device using the adhesive tape 100 described above.

[0158] Furthermore, when peeling the separator 1 from the adhesive layer 2 that it covers, it is preferable to peel the separator 1 at an angle of 90° or more and 180° or less with respect to the surface of the adhesive layer 2. By setting the angle at which the separator 1 is peeled within this range, peeling can be reliably prevented at any point other than the interface between the adhesive layer 2 and the separator 1.

[0159] Although the pressure-sensitive adhesive tape of the present invention has been described above, the present invention is not limited thereto.

[0160] For example, any component capable of exerting the same function may be added to each layer of the adhesive tape of the present invention, or the substrate may be composed of a single layer as described in the above embodiment, or may be composed of multiple layers, and for example, the substrate may be provided with an antistatic layer on the surface opposite to the adhesive layer of the above-mentioned substrate.

[0161] Furthermore, the configuration of each layer of the adhesive tape can be replaced with any other layer that can exert the same function, or any other layer can be added.

[0162] Furthermore, depending on the configuration of the semiconductor device formed using the adhesive tape, it may be possible to omit the formation of the molded portion 17 provided in the semiconductor device 10.

[0163] The adhesive tape of the present invention can be applied not only to cases where a semiconductor substrate to which adhesive tape has been attached is cut in the thickness direction (diced) to obtain cut pieces, i.e., semiconductor chips as components, but also to various substrate processing applications in which components must be obtained by cutting the substrate in the thickness direction while the substrate is temporarily fixed on the adhesive tape and then peeling the components from the adhesive tape. Substrates that can be attached with the adhesive tape of the present invention include the semiconductor substrates (semiconductor wafers) described above, as well as encapsulated semiconductor linked bodies in which multiple semiconductor elements are encapsulated by encapsulation units. In this case, encapsulated semiconductor linked bodies serving as substrates can be obtained as components by cutting them in the thickness direction. Other examples of the substrate include glass substrates such as soda-lime glass, borosilicate glass, and quartz glass; ceramic substrates such as alumina, silicon nitride, and titanium oxide; resin material substrates such as acrylic, polycarbonate, and rubber; and metal material substrates. When the adhesive tape of the present invention is used to obtain a semiconductor sealing body as a component by cutting the semiconductor sealing body as a substrate in the thickness direction, unevenness is formed on the surface of the semiconductor element (semiconductor chip) of the semiconductor sealing body due to the provision of a circuit, and the adhesive tape of the present invention is attached to the semiconductor sealing body so that the uneven surface is bonded to the adhesive layer of the adhesive tape of the present invention, thereby making it possible to more significantly exhibit the effects obtained by using the adhesive tape of the present invention. [Example]

[0164] Next, specific examples of the present invention will be described. However, the present invention is not limited to the descriptions in these examples.

[0165] 1. Raw material preparation First, the raw materials used in the production of the pressure-sensitive adhesive tapes of each Example and Comparative Example are shown below.

[0166] (Polyolefin resin 1) As polyolefin resin 1, low-density polyethylene (LDPE, manufactured by Sumitomo Chemical Co., Ltd., "Sumikasen F200-0", specific gravity: 0.92 g / cm 3 ) was prepared.

[0167] (Antistatic Agent 1) As antistatic agent 1, a polyether-based antistatic agent (manufactured by Sanyo Chemical Industries, Ltd., "Pelectron PVL") was prepared.

[0168] (Base resin 1-3) Base resins 1 to 3 were prepared by mixing at least two of butyl acrylate, butyl methacrylate, 2-ethylhexyl acrylate, acrylic acid, 2-hydroxyethyl acrylate, N,N-dimethylacrylamide, and vinyl acetate, and then solution polymerizing the mixture in a toluene solvent using a conventional method to produce acrylic copolymers.

[0169] The glass transition points and weight average molecular weights of base resins (acrylic copolymers) 1 to 3 were as shown below.

[0170] Base resin 1 (glass transition temperature: -37°C, weight average molecular weight: 600,000) Base resin 2 (glass transition temperature: -45°C, weight average molecular weight: 500,000) Base resin 3 (glass transition temperature: -10°C, weight average molecular weight: 650,000)

[0171] (curable resin 1) As the curable resin 1, dipentaerythritol hexaacrylate (manufactured by Daicel Allnex Corporation, product number: DPHA), which is an esterification product of (meth)acrylic acid and polyhydric alcohol, was prepared.

[0172] (Curable resin 2) As the curable resin 2, urethane acrylate (manufactured by Miwon Specialty Chemical Co., Ltd., product number: SC2152) was prepared.

[0173] (Curable resin 3) As the curable resin 3, bis-A type epoxy acrylate (manufactured by Nippon Kayaku Co., Ltd., product number: R-130) was prepared.

[0174] (Crosslinker 1) As a crosslinking agent 1, polyisocyanate (manufactured by Tosoh Corporation, product number: Coronate L) was prepared.

[0175] (Photopolymerization initiator 1) As a photopolymerization initiator 1, benzyl dimethyl ketal (manufactured by Tokyo Chemical Industry Co., Ltd.) was prepared.

[0176] (Plasticizer 1) As plasticizer 1, a polyester plasticizer (manufactured by DIC Corporation, product number: W-230H) was prepared.

[0177] 2. Preparation of Adhesive Tape [Example 1] A resin composition consisting of polyolefin resin 1 (100.0% by weight) was extruded using an extruder to prepare a substrate 4 having a thickness of 140.0 μm.

[0178] Next, a liquid material containing a resin composition containing base resin 1 (100.0 parts by weight), curable resin 1 (44.0 parts by weight), crosslinker 1 (17.5 parts by weight), plasticizer 1 (1.0 part by weight), and photopolymerization initiator 1 (6.0 parts by weight) was prepared. This liquid material was bar-coated onto substrate 4 so that the thickness of adhesive layer 2 after drying would be 15.0 μm, and then dried at 80°C for 1 minute to form adhesive layer 2 with a thickness of 15.0 μm on the upper surface (one side) of substrate 4, thereby obtaining adhesive tape 100 of Example 1.

[0179] [Examples 2 to 4, Comparative Examples 1 to 3] The adhesive tapes of Examples 2 to 4 and Comparative Examples 1 to 3 were produced in the same manner as in Example 1, except that the constituent materials contained in the resin composition used to form the base material 4 and the constituent materials contained in the resin composition used to form the adhesive layer 2 were those shown in Table 1, and the content of each constituent material was changed as shown in Table 1 to form the base material 4 and adhesive layer 2 with the thickness shown in Table 1.

[0180] 3. Evaluation The resulting pressure-sensitive adhesive tapes of each of the Examples and Comparative Examples were evaluated by the following methods.

[0181] 3-1. Tensile test of adhesive layer For each of the pressure-sensitive adhesive tapes 100 of the Examples and Comparative Examples, a test piece of the adhesive layer measuring 0.5 mm thick x 6 mm wide x 20 mm long and having a 1 mm notch in the center of the longitudinal direction along the width direction was prepared. Before applying energy to the test piece, a tensile test was performed on the test piece using a precision universal testing machine (Shimadzu Corporation, "Autograph AGS-X") at 25°C with a chuck distance of 10 mm and a tensile speed of 1000 mm / min to obtain a displacement-stress curve (SS curve). Then, based on the obtained displacement-stress curve, the tear strength X [MPa] and the breaking elongation [%] were calculated.

[0182] The tear strength X [MPa] and breaking elongation [%] of the adhesive layer 2 were measured using an ultraviolet irradiance of 55 W / cm 2 , UV irradiation amount: 1000mj / cm 2 Even after applying energy by irradiating the adhesive layer 2 with ultraviolet light under the above conditions, the displacement-stress curve was measured and calculated in the same manner for the adhesive tapes 100 of each of the examples and comparative examples.

[0183] In addition, as a test piece, an unformed test piece consisting of an adhesive layer 2 with dimensions of 0.5 mm thick x 6 mm wide x 20 mm long, in which the formation of the notch was omitted, was prepared, and the tear strength Y [MPa] and breaking elongation [%] were calculated based on measurements of the displacement-stress curve of the adhesive layer 2 in this unformed test piece, and were similarly performed for the adhesive tapes 100 of each example and each comparative example.

[0184] 3-2. Checking unevenness tracking ability A silicon wafer (manufactured by SUMCO Corporation) was prepared having a plurality of protrusions (convex portions) on its surface, each 5 μm high, 50 μm wide, and with a pitch of 30 μm, arranged in a grid pattern. The silicon wafer was placed on a stage with the protrusions facing up, and the pressure-sensitive adhesive tape 100 of each example and comparative example was applied to the surface of the silicon wafer by pressing a roller having a diameter of 35 mm and a width of 400 mm against the surface at a pressure of 0.5 MPa with the stage heated to 25°C. The conformance (%) of the adhesive layer 2 to the protrusions was determined and evaluated according to the following criteria. The conformance of the adhesive layer 2 was calculated by dividing the depth of the recesses formed in the adhesive tape 100 by the height of the protrusions.

[0185] (Evaluation of the adhesive layer's follow-up rate) The rate (%) of adhesion of the adhesive layer to the protrusions on the surface of the silicon wafer is ◎: 80% or more 〇: Between 70% and 80% △: 50% or more but less than 70% ×: Less than 50%

[0186] 3-3. Evaluation of adhesive residue on silicon chips <1> A silicon wafer (manufactured by SUMCO Corporation, thickness 625 μm) made of silicon was prepared as a silicon substrate. Then, the adhesive tape 100 of each example and comparative example was fixed to the silicon substrate with the adhesive layer 2 facing the silicon substrate side. Then, using a blade with a thickness of 30 μm, the silicon substrate was cut in the thickness direction to reach half the thickness of the base material 4 under conditions of a rotation speed of 30,000 rpm and a processing speed of 60 mm / s, thereby obtaining a plurality of silicon chips with a length of 6 mm and a width of 6 mm.

[0187] <2> Next, this silicon chip was pushed up using a needle with the needle push-up amount set to 600 [μm], and then the silicon chip was picked up by suction with a vacuum collet.

[0188] The above process <1> ~ <2> By going through this process, picking up of 50 silicon chips by suction was repeatedly carried out for each adhesive tape of each Example and Comparative Example.

[0189] Then, for each silicon chip obtained in the pressure-sensitive adhesive tape of each Example and Comparative Example, the adhesion rate, which indicates the area where the adhesive layer adhered to the side surface of the picked-up silicon chip, was measured. This adhesion rate measurement was carried out for 50 silicon chips in each pressure-sensitive adhesive tape of each Example and Comparative Example, and the average value was calculated, and then these were evaluated according to the following criteria.

[0190] (Evaluation of adhesive layer adhesion rate) The average adhesion rate of the adhesive layer on the side of 50 silicon chips was ◎: 0.0% (no adhesion) ○: Over 0.0% and 5.0% or less △: Over 5.0% and 10.0% or less ×: Over 10.0%

[0191] [Table 1]

[0192] As shown in Table 1, in the adhesive tape 100 of each embodiment, before energy was applied to the adhesive layer 2, the tear strength in the displacement-stress curve was 0.18 MPa or more and 1.09 MPa or less, and the breaking elongation was 200% or more and 2500% or less, thereby demonstrating that the adhesion of the adhesive layer to the side surface of the silicon chip can be accurately suppressed or prevented, and the silicon substrate can be singulated.

[0193] In contrast, in the adhesive tapes of each comparative example, before energy was applied to the adhesive layer 2, the tear strength in the displacement-stress curve did not satisfy the requirements of 0.18 MPa or more and 1.09 MPa or less, and the breaking elongation did not satisfy the requirements of 200% or more and 2500% or less, and as a result, when the silicon substrate was diced, the adhesive layer adhered to the side surfaces of the silicon chips. [Explanation of symbols]

[0194] 1 Separator 2 Adhesive layer 4 Base material 7. Semiconductor substrate 9 Wafer ring 10 Semiconductor devices 17 Mold section 20 Semiconductor chips 21 terminals 23 Semiconductor chip body 30 Interposer 41 terminals 70 Bump 80 Sealing layer 81 Connection 85 Solder bumps 100 adhesive tape 121 Outer periphery 122 Center 200 Dicer Table 300 tables 310 Center 320 Outer periphery 400 stages 410 Ejector Head 430 Needle

Claims

1. An adhesive tape comprising a substrate and an adhesive layer laminated on one surface of the substrate, the adhesive tape being used for temporarily fixing at least one of a substrate and a component, the adhesive layer contains a base resin having adhesiveness and a curable resin that is cured by the application of energy, and the adhesive strength of the adhesive layer is reduced by applying energy to the adhesive layer to cure the adhesive layer; a pressure-sensitive adhesive tape characterized in that a test piece of the pressure-sensitive adhesive layer having dimensions of 0.5 mm thick × 6 mm wide × 20 mm long and having a 1 mm long notch in the width direction at the center in the longitudinal direction is prepared, and the test piece is stretched in the longitudinal direction under conditions of a chuck distance of 10 mm and a tensile speed of 1000 mm / min at 25°C, and the measured displacement-stress curve shows a tear strength of 0.22 MPa or more and 0.72 MPa or less and a breaking elongation of 750% or more and 2500% or less.

2. The adhesive tape according to claim 1 , wherein the adhesive layer has a thickness of 5 μm or more and 30 μm or less.

3. 3. The pressure-sensitive adhesive tape according to claim 1, wherein the curable resin is at least one of an ester of (meth)acrylic acid and a polyhydric alcohol, a urethane acrylate, and a bisphenol A-based epoxy acrylate.

4. 4. The adhesive tape according to claim 1, wherein the base resin is an acrylic resin.

5. The adhesive tape according to claim 1 , wherein the adhesive layer further contains a crosslinking agent, and the crosslinking agent is an isocyanate-based crosslinking agent.

6. 6. The adhesive tape according to claim 1, wherein the adhesive tape is used in the following steps: with a substrate fixed on the adhesive layer, cutting from the substrate to reach partway along the thickness direction of the base material to separate the substrate into individual components; and then, while stretching the adhesive tape in the lengthwise direction, pulling out the components from the opposite side of the base material while pushing them up from the base material side, thereby detaching the components from the adhesive layer.

7. 7. The pressure-sensitive adhesive tape according to claim 1, wherein, when the displacement-stress curve is measured after the energy is applied to the test piece, the tear strength is 0.5 MPa or more and 8.0 MPa or less.

8. The adhesive tape according to any one of claims 1 to 7, which satisfies the following requirement A: Requirement A: After fixing a silicon substrate to the adhesive tape, a 30 μm thick blade is used to cut the silicon substrate in the thickness direction to half the thickness of the base material at a rotation speed of 30,000 rpm and a processing speed of 60 mm / s to obtain individual silicon chips measuring 6 mm long x 6 mm wide. The adhesion rate of the adhesive layer adhering to the side surface of the silicon chip must be 5.0% or less.

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