Exposure method for photo-alignment layer

The exposure method using a polarization diffraction element with continuous optical axis rotation and helical liquid crystal orientations addresses zero-order light noise, enabling precise formation of alignment patterns even with short pitches.

JP7828332B2Active Publication Date: 2026-03-11FUJIFILM CORP
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Filing Date
2022-04-06
Publication Date
2026-03-11

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Abstract

The present invention addresses the problem of providing an optical alignment layer exposure method whereby an alignment pattern that is free of disorder can be formed. This optical alignment layer exposure method includes an exposure step for arranging an exposure mask and a substrate that has a coating film including a compound having a photo-aligning group so that the exposure mask and the coating film face each other, and exposing the coating film via the exposure mask by irradiating the exposure mask with light to which the compound is sensitive, the exposure mask being a polarized light diffraction element having an alignment pattern in which the optical axis thereof changes along at least one in-plane direction while continuously rotating, an image of a cross section cut in the thickness direction along one direction observed by scanning electron microscope having a bright part and a dark part extending from one main surface to the other main surface, the dark part having a region that is inclined relative to the normal direction of the main surface, and the exposure step comprising exposing the coating film with light diffracted by the exposure mask.
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Citation Information

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