Semiconductor manufacturing equipment components

Abstract

The wafer mounting table (10) includes a ceramic plate (20) incorporating an electrostatic electrode (22); a base plate (30) bonded to the underside (23) of the ceramic plate (20) via a bonding layer (40) and incorporating a coolant flow path (32); a base plate through-hole (34) that vertically passes through the base plate (30) at a position that does not interfere with the coolant flow path (32) and has an opening (34c) on the ceramic plate (20) side that is C-chamfered to a chamfering angle of C0.5 or more; an insulating tube (50) inserted into the base plate through-hole (34); a power supply member (70) inserted into the insulating tube (50) and whose tip is electrically connected to the electrostatic electrode (22); and an adhesive layer (60) provided between an inner circumferential surface (34b) of the base plate through-hole (34) including the C-chamfered opening (34c) and an outer circumferential surface (50b) of the insulating tube (50).

Description

[Technical Field]

[0001] The present invention relates to a member for a semiconductor manufacturing device. [Background technology]

[0002] Conventionally, semiconductor manufacturing equipment components have been known that include a ceramic plate, a base plate, a base plate through hole, and a power supply member. For example, in the semiconductor manufacturing equipment component described in Patent Document 1, the ceramic plate has a wafer mounting surface on its upper surface and incorporates a heater electrode. The base plate is bonded to the lower surface of the ceramic plate via a bonding layer and incorporates a coolant flow path. The base plate through hole penetrates the base plate in the vertical direction at a position that does not interfere with the coolant flow path and has a C-chamfered opening on the ceramic plate side. The power supply member is inserted into the base through hole, and its tip is electrically connected to the heater electrode. It is also described that the base plate through hole may be equipped with an insulating tube through which the power supply member is inserted. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2023-27641 Summary of the Invention [Problem to be solved by the invention]

[0004] Incidentally, in Patent Document 1, when the base plate through hole is provided with an insulating tube, it is conceivable to provide an adhesive layer between the inner peripheral surface of the base plate through hole, including the C-chamfered opening, and the outer peripheral surface of the insulating tube (this configuration is not described in Patent Document 1). However, when forming the adhesive layer, air bubbles can get into the area surrounded by the C-chamfered opening and the outer peripheral surface of the insulating tube, and these air bubbles can reduce the withstand voltage between the power supply member and the base plate.

[0005] The present invention has been made to solve such problems, and its main object is to increase the withstand voltage between the power supply member and the base plate and to suppress variations in withstand voltage between products. [Means for solving the problem]

[0006] [1] The semiconductor manufacturing equipment member of the present invention is a ceramic plate having a wafer mounting surface on its upper surface and incorporating an electrode; a base plate bonded to the lower surface of the ceramic plate via a bonding layer and having a coolant flow path built therein; a base plate through-hole that passes through the base plate in the vertical direction at a position that does not interfere with the refrigerant flow path and has an opening on the ceramic plate side that is C-chamfered to C0.5 or more; the insulating tube inserted into the base plate through-hole; a power supply member inserted into the insulating tube and having a tip electrically connected to the electrode; an adhesive layer provided between an inner circumferential surface of the base plate through hole including the C-chamfered opening and an outer circumferential surface of the insulating tube; It is equipped with the following.

[0007] In this semiconductor manufacturing equipment component, the base plate through hole has a C-chamfered opening on the ceramic plate side with a chamfered edge of C0.5 or greater, and an adhesive layer is provided between the inner peripheral surface of the base plate through hole, including the C-chamfered opening, and the outer peripheral surface of the insulating tube. This allows air bubbles to escape radially outward from the insulating tube, preventing them from entering the adhesive layer between the upper surface of the insulating tube and the lower surface of the ceramic plate, even when air bubbles are inserted into the base plate through hole with adhesive applied to the bottom surface of the base plate through hole. This reduces the impact of air bubbles on the withstand voltage. This increases the withstand voltage between the power supply member and the base plate, and reduces variations in withstand voltage between products, even if the formation of air bubbles varies from product to product.

[0008] [2] In the semiconductor manufacturing equipment component of the present invention (the semiconductor manufacturing equipment component described in [1] above), it is preferable that the opening of the base plate through hole and the coolant flow path do not overlap when the semiconductor manufacturing equipment component is viewed from above. If the opening of the base plate through hole and the coolant flow path overlap when the semiconductor manufacturing equipment component is viewed from above, the thickness of the base plate between the opening of the base plate through hole and the coolant flow path is likely to be thin, which could result in defects (deformation, cracks, etc.) in the base plate when the base plate and the ceramic plate are joined. Here, because the opening of the base plate through hole and the coolant flow path do not overlap when the semiconductor manufacturing equipment component is viewed from above, such a risk is eliminated.

[0009] [3] In the semiconductor manufacturing equipment component of the present invention (the semiconductor manufacturing equipment component described in [1] or [2] above), the C-chamfered opening is preferably C2 or less. The temperature of a wafer placed on the wafer mounting surface tends to be high directly above the central axis of the base plate through hole. Therefore, if the opening of the base plate through hole exceeds C2 (is too large), heat from the ceramic plate is less likely to escape to the base plate. If the C-chamfered opening is C2 or less, it is possible to prevent heat from the ceramic plate from being less likely to escape to the base plate. Furthermore, if the C-chamfered opening is C2 or less, the coolant flow path can be brought sufficiently close to the base plate through hole, as long as the opening of the base plate through hole and the coolant flow path do not overlap when the wafer mounting table is viewed from above.

[0010] [4] In the semiconductor manufacturing equipment member of the present invention (the semiconductor manufacturing equipment member according to any one of [1] to [3] above), the adhesive layer may have air bubbles between the opening of the base plate through-hole and the outer circumferential surface of the insulating tube, and the air bubbles may be present at a position spaced apart from the insulating tube. This makes it easier to achieve the effects of the present invention.

[0011] [5] In the semiconductor manufacturing equipment member of the present invention (the semiconductor manufacturing equipment member according to any one of [1] to [4] above), the bonding layer may have a bonding-layer through-hole at a position facing the base plate through-hole, and the distance from the outer edge of the opening of the base plate through-hole to the inner circumferential surface of the bonding-layer through-hole may be 0.5 mm or less. In this way, even if there is a space between the outer edge of the opening of the base plate through-hole and the inner circumferential surface of the bonding-layer through-hole, the effect on the thermal uniformity of the wafer can be reduced.

[0012] [6] In the semiconductor manufacturing equipment member of the present invention (the semiconductor manufacturing equipment member according to any one of [1] to [5] above), the thermal conductivity of the adhesive layer is preferably 0.5 W / mK or more. This facilitates the transfer of heat from the wafer to the base plate via the adhesive layer, making it easier to maintain uniform temperature across the wafer. [Brief explanation of the drawings]

[0013] [Figure 1] FIG. [Figure 2] Cross section AA of Figure 1. [Figure 3] Enlarged view of a portion of Figure 2. [Figure 4] 5A to 5C are explanatory views showing a bonding process for the insulating tube 50 of the present embodiment. [Figure 5] 10A and 10B are explanatory views showing a bonding process for an insulating tube 50 according to a comparative example. [Figure 6] 10 is a graph showing the relationship between the C value of an opening 34c and a parameter related to withstand voltage. [Figure 7] FIG. [Figure 8] FIG. DETAILED DESCRIPTION OF THE INVENTION

[0014] A preferred embodiment of the present invention will be described with reference to the drawings. Fig. 1 is a plan view of a wafer mounting table 10, Fig. 2 is a cross-sectional view taken along the line AA in Fig. 1, and Fig. 3 is an enlarged view of a portion of Fig. 2 (an enlarged view of the area enclosed by the two-dot chain line).

[0015] The wafer mounting table 10 is an example of a component for a semiconductor manufacturing apparatus according to the present invention, and as shown in FIG. 2, includes a ceramic plate 20, a base plate 30, a bonding layer 40, a base plate through-hole 34, an insulating tube 50, and a power supply member 70.

[0016] The ceramic plate 20 is a circular plate (e.g., 300 mm in diameter and 5 mm in thickness) made of ceramic such as sintered alumina or sintered aluminum nitride. The upper surface of the ceramic plate 20 serves as a wafer mounting surface 21 on which a wafer W is placed. The ceramic plate 20 incorporates an electrostatic electrode 22. Although not shown, an annular seal band is formed along the outer edge of the wafer mounting surface 21 of the ceramic plate 20, and a plurality of small circular protrusions are formed on the entire inner surface of the seal band. The electrostatic electrode 22 is a planar mesh electrode and is connected to an external DC power supply (not shown) via a power supply member 70. When a DC voltage is applied to the electrostatic electrode 22, the wafer W is attracted and fixed to the wafer mounting surface 21 by electrostatic attraction. When the application of the DC voltage is stopped, the wafer W is released from the attraction and fixation to the wafer mounting surface 21.

[0017] The base plate 30 is a circular plate (e.g., a circular plate with the same diameter as or larger than the ceramic plate 20 and a thickness of 25 mm) with good electrical and thermal conductivity. A refrigerant flow path 32 is formed inside the base plate 30, through which a refrigerant circulates. The refrigerant flowing through the refrigerant flow path 32 is preferably a liquid, and is preferably electrically insulating. Examples of electrically insulating liquids include a fluorine-based inert liquid. As shown in FIG. 1 , the refrigerant flow path 32 is formed in a spiral shape in a plan view across the entire base plate 30 from one end (inlet 32 ​​in) to the other end (outlet 32 ​​out) in a single stroke. The inlet 32 ​​in and the outlet 32 ​​out of the refrigerant flow path 32 are connected to a supply port and a recovery port of an external refrigerant device (not shown), respectively. The refrigerant supplied from the supply port of the external refrigerant device to the inlet 32 ​​in of the refrigerant flow path 32 passes through the refrigerant flow path 32, returns from the outlet 32 ​​out of the refrigerant flow path 32 to the recovery port of the external refrigerant device, and is then temperature-adjusted before being supplied again from the supply port to the inlet 32 ​​in of the refrigerant flow path 32. The base plate 30 is connected to a radio frequency (RF) power source and is also used as an RF electrode.

[0018] Examples of materials for the base plate 30 include metal materials and composite materials of metal and ceramic. Metal materials include Al, Ti, Mo, and alloys thereof. Metal and ceramic composite materials include metal matrix composites (MMC) and ceramic matrix composites (CMC). Specific examples of such composite materials include a material containing Si, SiC, and Ti (also known as SiSiCTi), a material in which porous SiC is impregnated with Al and / or Si, and a composite material of Al2O3 and TiC. It is preferable to select a material for the base plate 30 that has a thermal expansion coefficient close to that of the material of the ceramic plate 20.

[0019] The bonding layer 40 here is a metal layer that bonds the lower surface of the ceramic plate 20 to the upper surface of the base plate 30. The metal layer can be formed by well-known TCB (thermal compression bonding) using a metal bonding material (for example, an Al-Mg based bonding material or an Al-Si-Mg based bonding material).

[0020] The base plate through-hole 34 is a generally cylindrical hole that penetrates the base plate 30 in the vertical direction but does not penetrate the coolant flow path 32. In other words, the base plate through-hole 34 penetrates the base plate 30 in the vertical direction at a position that does not interfere with the coolant flow path 32. The base plate through-hole 34 has an opening 34c that is C-chamfered at C0.5 or more on the ceramic plate 20 side. Therefore, the C-chamfered opening 34c has a tapered surface. Note that "C0.5" means that x = 0.5 (mm) in FIG. 3. The opening 34c is preferably C2 or less. When the wafer mounting table 10 is viewed from above, it is preferable that the outer edge 34c1 of the opening 34c does not overlap with the coolant flow path 32, as indicated by the dashed-dotted arrow in FIG. 3. The base plate through-hole 34 communicates with the bonding layer through-hole 44. The bonding layer through-hole 44 is a substantially cylindrical hole that penetrates the bonding layer 40 in the vertical direction, and is provided at a position facing the base plate through-hole 34. In this embodiment, the distance from the outer edge 34c1 of the opening 34c of the base plate through-hole 34 to the inner circumferential surface 44a of the bonding layer through-hole 44 is zero.

[0021] The insulating tube 50 is housed in the base plate through-hole 34 and the bonding layer through-hole 44. The insulating tube 50 is a substantially cylindrical member made of an electrically insulating material (such as ceramic or resin), and has an insulating tube through-hole 54 that passes through the insulating tube 50 in the vertical direction along the central axis of the insulating tube 50.

[0022] As shown in FIG. 3 , the insulating tube 50 is bonded to the lower surface 23 of the ceramic plate 20 and the inner circumferential surface 34b of the base plate through-hole 34 via an adhesive layer 60. The adhesive layer 60 contains resin. The adhesive layer 60 has an insulating tube upper surface bonding portion 61, an insulating tube outer circumferential surface bonding portion 62, and an insulating tube inner circumferential surface bonding portion 63. The insulating tube upper surface bonding portion 61 bonds the lower surface 23 of the ceramic plate 20 to the upper surface 50a of the insulating tube 50. The insulating tube outer circumferential surface bonding portion 62 bonds the inner circumferential surface 34b (including the opening 34c) of the base plate through-hole 34, the outer circumferential surface 50b of the insulating tube 50, and the lower surface 23 of the ceramic plate 20. The insulating tube inner circumferential surface bonding portion 63 bonds the outer circumferential surface of the power supply member 70, the inner circumferential surface 50c of the insulating tube 50, and the lower surface 23 of the ceramic plate 20. The portion of the insulating tube outer peripheral surface adhesive portion 62 between the opening 34c of the base plate through-hole 34 and the outer peripheral surface 50b of the insulating tube 50 is referred to as the specific adhesive portion 62a. The specific adhesive portion 62a may contain air bubbles. If the specific adhesive portion 62a contains air bubbles, the air bubbles are preferably present at a position separated from the insulating tube 50 (a position not in contact with the upper surface 50a or the outer peripheral surface 50b of the insulating tube 50). An example is shown in FIG. 4D. The thickness (vertical length) of the insulating tube upper surface adhesive portion 61 is preferably, for example, 0.01 mm or more and 0.1 mm or less. The height (vertical length, also referred to as the creeping amount) of the insulating tube outer peripheral surface adhesive portion 62 is preferably, for example, 3 mm or more and 10 mm or less. The distance (radial length) between the inner peripheral surface 34b of the base plate through-hole 34 (excluding the opening 34c) and the outer peripheral surface 50b of the insulating tube 50 is preferably, for example, 0.05 mm or more and 0.5 mm or less. Examples of materials for the adhesive layer 60 include insulating resins such as epoxy resin, acrylic resin, and silicone resin. The adhesive layer 60 may be made of insulating resin containing a filler. The filler preferably has a higher thermal conductivity than the insulating resin of the adhesive layer 60, and may be, for example, alumina or aluminum nitride. The thermal conductivity of the adhesive layer 60 is preferably 0.5 W / mK or higher. For example, the adhesive layer 60 may be made of silicone resin containing alumina filler (thermal conductivity 2.2 W / mK).

[0023] The power supply member 70 is, for example, a metal rod. Metals used for the power supply member 70 include, for example, W, Mo, and Ni, and it is preferable for the metal to have a thermal expansion coefficient close to that of the ceramic plate 20. As shown in FIG. 3 , the power supply member 70 is inserted into the insulating tube through-hole 54 and the ceramic plate blind hole 24, and is electrically connected to the electrostatic electrode 22 exposed at the bottom of the ceramic plate blind hole 24 to supply power to the electrostatic electrode 22. The ceramic plate blind hole 24 is a substantially cylindrical hole extending from the underside 23 of the ceramic plate 20 to the electrostatic electrode 22, and has a smaller diameter than the insulating tube through-hole 54. The power supply member 70 is electrically insulated from the base plate 30 by the insulating tubes 50 disposed in the base plate through-hole 34 and the bonding layer through-hole 44.

[0024] Next, the step of adhering the insulating tube 50 in the manufacturing method of the wafer mounting table 10 will be described with reference to Fig. 4. Fig. 4 is an explanatory diagram of this step. Note that in Figs. 4A to 4D, the wafer mounting surface 21 of the ceramic plate 20 faces downward. Figs. 4A to 4D are partially enlarged views of the periphery of the base plate through-hole 34.

[0025] First, a bonded assembly is prepared in which the ceramic plate 20 and the base plate 30 are bonded together with the bonding layer 40 (FIG. 4A). In this bonded assembly, an electrostatic electrode 22 is embedded in the ceramic plate 20. In this bonded assembly, a power supply member 70 is inserted into the ceramic plate blind hole 24 via the base plate through hole 34 and the bonding layer through hole 44, and is electrically connected to the electrostatic electrode 22. A C-chamfered opening 34c is formed in the base plate through hole 34. Next, an adhesive 60x is placed on the underside 23 of the ceramic plate 20 (FIG. 4B). The adhesive 60x penetrates between the opening 34c of the base plate through hole 34 and the underside 23 of the ceramic plate 20. Then, the insulating tube 50 is inserted into the base plate through hole 34 so that the upper surface 50a of the insulating tube 50 faces the adhesive 60x. Next, when the insulating tube 50 is pressed toward the ceramic plate 20, the adhesive 60x creeps up between the lower surface 23 of the ceramic plate 20 and the upper surface 50a of the insulating tube 50, between the inner circumferential surface 34b of the base plate through-hole 34 and the outer circumferential surface 50b of the insulating tube 50, and between the outer circumferential surface of the power supply member 70 and the inner circumferential surface 50c of the insulating tube 50 (FIG. 4C). When the insulating tube 50 is further pressed toward the ceramic plate 20, the gap between the lower surface 23 of the ceramic plate 20 and the upper surface 50a of the insulating tube 50 narrows. In this state, the adhesive 60x solidifies, bonding the insulating tube 50 to the ceramic plate 20 and the base plate 30 via the adhesive layer 60. In this manner, the wafer mounting table 10 is obtained (FIG. 4D).

[0026] However, air bubbles may be trapped in the adhesive 60x. In this embodiment, the opening 34c has a C-chamfered chamfer of C0.5 or more. Therefore, during the process of inserting the insulating tube 50 into the base plate through-hole 34 so that the upper surface 50a of the insulating tube 50 faces the adhesive 60x and pushing it toward the ceramic plate 20 (the process from FIG. 4B to FIG. 4C to FIG. 4D), air bubbles generated in the adhesive 60x can escape radially outward from the upper surface 50a of the insulating tube 50. As a result, air bubbles are prevented from being trapped between the lower surface 23 of the ceramic plate 20 and the upper surface 50a of the insulating tube 50. In contrast, if the C-chamfered opening 34c is less than C0.5 (e.g., C0.2) (comparative embodiment), air bubbles will be crushed by the upper surface 50a of the insulating tube 50. FIG. 5 is an explanatory diagram of the process of adhering the insulating tube 50 of the comparative embodiment. FIGS. 5A to 5D correspond to FIGS. 4A to 4D. During the process of inserting the insulating tube 50 into the base plate through-hole 34 so that the upper surface 50a of the insulating tube 50 faces the adhesive 60x and then pushing it toward the ceramic plate 20 (the process from FIG. 5B to FIG. 5C to FIG. 5D), air bubbles generated in the adhesive 60x cannot escape radially outward from the upper surface 50a of the insulating tube 50 and are crushed by the upper surface 50a of the insulating tube 50. As a result, air bubbles remain between the lower surface 23 of the ceramic plate 20 and the upper surface 50a of the insulating tube 50, forming a discharge path.

[0027] In practice, a wafer mounting table (Example 1) in which an insulating tube 50 having an opening 34c of C0.5 was bonded to a ceramic plate 20 and a base plate 30 via an adhesive layer 60, a wafer mounting table (Example 2) in which an insulating tube 50 having an opening 34c of C1 was bonded to a ceramic plate 20 and a base plate 30 via an adhesive layer 60, and a wafer mounting table (Comparative Example 1) in which an insulating tube 50 having an opening 34c of C0.2 was bonded to a ceramic plate 20 and a base plate 30 via an adhesive layer 60 were fabricated, and cross sections were photographed using X-ray CT to observe the state of the adhesive layer 60. In Examples 1 and 2, no air bubbles were observed in the gap between the upper surface 50a of the insulating tube 50 and the lower surface 23 of the ceramic plate 20. In contrast, in Comparative Example 1, air bubbles were observed in the gap between the upper surface 50a of the insulating tube 50 and the lower surface 23 of the ceramic plate 20. The configurations of Examples 1 and 2 and Comparative Example 1 were the same except for the C values ​​of the openings 34c.

[0028] We also investigated the relationship between the C value of the opening 34c and the withstand voltage, and the relationship between the C value of the opening 34c and the withstand voltage CV (coefficient of variation). The withstand voltage was measured between the base plate 30 and the power supply member 70. The C values ​​were 0.2, 0.3, 0.5, and 1. Multiple wafer mounting tables were fabricated for each C value, and the withstand voltages of the multiple wafer mounting tables were calculated. The withstand voltage CV is the value obtained by dividing the standard deviation of the withstand voltage by the average withstand voltage. The results are shown in Figure 6. Figure 6 indicates that when the C value of the opening 34c is 0.5 or greater, the withstand voltage increases and the withstand voltage CV (an index representing the variation in withstand voltage) decreases. The configuration of the samples used in the measurement of Figure 6 was the same except for the C value of the opening 34c.

[0029] Next, an example of how the wafer mounting table 10 configured as described above is described. First, the wafer mounting table 10 is installed in a chamber (not shown), and the wafer W is mounted on the wafer mounting surface 21. The chamber is then depressurized using a vacuum pump to a predetermined vacuum level, and a DC voltage is applied to the electrostatic electrode 22 of the ceramic plate 20 to generate an electrostatic adsorption force, thereby adsorbing and fixing the wafer W to the wafer mounting surface 21. Next, the chamber is filled with a reactive gas atmosphere at a predetermined pressure (e.g., several tens to several hundreds of Pa). In this state, an RF voltage is applied between an upper electrode (not shown) provided on the ceiling of the chamber and the base plate 30 of the wafer mounting table 10 to generate plasma. The surface of the wafer W is processed by the generated plasma. A coolant is circulated through the coolant flow passages 32 of the base plate 30 as needed. When the wafer W is processed with plasma in this manner, heat input from the plasma is removed by the base plate 30, and the wafer mounting surface 21 is controlled to a desired temperature.

[0030] In the wafer mounting table 10 described above, the base plate through-hole 34 has a C-chamfered opening 34c with a chamfered edge of C0.5 or greater on the ceramic plate 20 side, and the adhesive layer 60 is provided between the inner circumferential surface 34b of the base plate through-hole 34, including the C-chamfered opening 34c, and the outer circumferential surface 50b of the insulating tube 50. This allows air bubbles to escape radially outward from the insulating tube 50 when the insulating tube 50 is inserted into the base plate through-hole 34 and bonded while the adhesive 60x is applied to the bottom surface of the base plate through-hole 34 (the lower surface 23 of the ceramic plate 20). This prevents air bubbles from forming between the upper surface 50a of the insulating tube 50 and the lower surface 23 of the ceramic plate 20. This reduces the effect of air bubbles on the withstand voltage. This increases the withstand voltage between the power supply member 70 and the base plate 30, and also reduces variations in withstand voltage between products, even if the formation of air bubbles varies from product to product.

[0031] Furthermore, it is preferable that the openings 34c of the base plate through holes 34 and the coolant channels 32 do not overlap when the wafer mounting table 10 is viewed from above. For example, as shown in FIG. 7, if the outer edges 34c1 of the openings 34c of the base plate through holes 34 and the coolant channels 32 overlap when the wafer mounting table 10 is viewed from above (see the dashed-dotted arrow), the thickness t of the base plate 30 between the openings 34c of the base plate through holes 34 and the coolant channels 32 is likely to be thin. As a result, there is a risk of defects (deformation, cracks, etc.) occurring in the base plate 30 when the base plate 30 is pressed against the ceramic plate 20 and bonded. In the above-described embodiment, the openings 34c of the base plate through holes 34 and the coolant channels 32 do not overlap when the wafer mounting table 10 is viewed from above, eliminating such a risk.

[0032] Furthermore, the C-chamfered opening 34c is preferably equal to or smaller than C2. The temperature of the wafer W placed on the wafer placement surface 21 tends to be high in the area directly above the central axis of the base plate through-hole 34. If the opening 34c of the base plate through-hole 34 exceeds C2 (is too large), heat from the ceramic plate 20 is less likely to escape to the base plate 30. If the C-chamfered opening 34c is equal to or smaller than C2, heat from the ceramic plate 20 is less likely to escape to the base plate 30. Furthermore, if the C-chamfered opening 34c is equal to or smaller than C2, the refrigerant flow path 32 can be placed sufficiently close to the base plate through-hole 34, as long as the opening 34c of the base plate through-hole 34 and the refrigerant flow path 32 do not overlap when the wafer placement table 10 is viewed from above.

[0033] Furthermore, the adhesive layer 60 may have air bubbles between the opening 34c of the base plate through-hole 34 and the outer peripheral surface 50b of the insulating tube 50 (specific adhesive portion 62a), and in this case, the air bubbles may be present at a position separated from the insulating tube 50. This makes it easier to achieve the effects of the present invention.

[0034] The thermal conductivity of the adhesive layer 60 is preferably 0.5 W / mK or more. This makes it easier for heat from the wafer W to be conducted to the base plate 30 side via the adhesive layer 60, making it easier to maintain uniform temperature across the wafer W.

[0035] It goes without saying that the present invention is not limited to the above-described embodiment, and can be embodied in various forms as long as they fall within the technical scope of the present invention.

[0036] In the above-described embodiment, the distance from the outer edge 34c1 of the opening 34c of the base plate through hole 34 to the inner circumferential surface of the bonding layer through hole 44 (this distance is designated as L in FIG. 8 ) is set to zero, but is not particularly limited thereto. For example, the distance L may be set to 0.5 mm or less. If the distance L is 0.5 mm or less, even if there is a space between the outer edge 34c1 of the opening 34c of the base plate through hole 34 and the inner circumferential surface of the bonding layer through hole 44, the effect on the thermal uniformity of the wafer W can be reduced. Specifically, the temperature difference between the portion of the wafer W directly above the central axis of the base plate through hole 34 and the temperature on a circle with a diameter of 30 mm centered on that portion can be kept to a predetermined temperature (e.g., 10°C) or less. If the distance L exceeds 0.5 mm (e.g., 0.6 mm), the space from the outer edge 34c1 of the opening 34c of the base plate through hole 34 to the inner circumferential surface of the bonding layer through hole 44 is too large, and this difference exceeds the predetermined temperature. Considering the ease with which the adhesive will penetrate into the space, the distance L is preferably 0.3 mm or less, more preferably 0.2 mm or less, and even more preferably 0.1 mm or less.

[0037] In the above-described embodiment, a metal layer is exemplified as the bonding layer 40, but the bonding layer 40 is not limited thereto. For example, a resin layer or an inorganic adhesive may be used as the bonding layer 40. Examples of materials for the resin layer include insulating resins such as epoxy resin, acrylic resin, and silicone resin. The bonding layer 40 may be an insulating resin containing a filler. The filler preferably has a higher thermal conductivity than the insulating resin of the bonding layer 40, and may be, for example, alumina or aluminum nitride. When a bonding layer with good thermal conductivity is used, a metal bonding layer is preferable.

[0038] In the above-described embodiment, the electrostatic electrode 22 is built into the ceramic plate 20, but this is not particularly limited. For example, instead of or in addition to the electrostatic electrode 22, a heater electrode (resistance heating element) or a plasma generation electrode (RF electrode) may be built in.

[0039] In the above-described embodiment, the adhesive layer 60 has the adhesive portion 63 on the inner peripheral surface of the insulating pipe, but it is not necessary to have the adhesive portion 63 on the inner peripheral surface of the insulating pipe.

[0040] This application claims priority from Japanese Patent Application No. 2024-151453, filed on September 3, 2024, the entire contents of which are incorporated herein by reference. [Industrial Applicability]

[0041] The present invention can be used in semiconductor manufacturing equipment. [Explanation of symbols]

[0042] 10 wafer mounting table, 20 ceramic plate, 21 wafer mounting surface, 22 electrostatic electrode, 23 bottom surface, 24 ceramic plate bottomed hole, 30 base plate, 32 refrigerant flow path, 32in inlet, 32out outlet, 34 base plate through hole, 34b inner peripheral surface, 34c opening, 34c1 outer edge, 40 bonding layer, 44 bonding layer through hole, 44a inner peripheral surface, 50 insulating tube, 50a upper surface, 50b outer peripheral surface, 50c inner peripheral surface, 54 insulating tube through hole, 60 adhesive layer, 60x adhesive, 61 insulating tube upper surface adhesive portion, 62 insulating tube outer peripheral surface adhesive portion, 62a specific adhesive portion, 63 insulating tube inner peripheral surface adhesive portion, 70 power supply member.

Claims

1. a ceramic plate having a wafer mounting surface on its upper surface and incorporating an electrode; a base plate bonded to the lower surface of the ceramic plate via a bonding layer and having a coolant flow path built therein; a base plate through-hole that passes through the base plate in the up-down direction at a position that does not interfere with the refrigerant flow path and has an opening that is chamfered to a C of 0.5 or more on the ceramic plate side; the insulating tube inserted into the base plate through-hole; a power supply member inserted into the insulating tube and having a tip electrically connected to the electrode; an adhesive layer provided between an inner circumferential surface of the base plate through hole including the C-chamfered opening and an outer circumferential surface of the insulating tube; Equipped with the adhesive layer has air bubbles between the opening of the base plate through-hole and the outer circumferential surface of the insulating tube, the air bubbles being present at a position spaced apart from the insulating tube; Components for semiconductor manufacturing equipment.

2. a ceramic plate having a wafer mounting surface on its upper surface and incorporating an electrode; a base plate bonded to the lower surface of the ceramic plate via a bonding layer and having a coolant flow path built therein; a base plate through-hole that passes through the base plate in the up-down direction at a position that does not interfere with the refrigerant flow path and has an opening that is chamfered to a C of 0.5 or more on the ceramic plate side; the insulating tube inserted into the base plate through-hole; a power supply member inserted into the insulating tube and having a tip electrically connected to the electrode; an adhesive layer provided between an inner circumferential surface of the base plate through hole including the C-chamfered opening and an outer circumferential surface of the insulating tube; Equipped with the bonding layer has a bonding layer through-hole at a position opposite to the base plate through-hole; a distance from an outer edge of the opening of the base plate through hole to an inner circumferential surface of the bonding layer through hole is 0.5 mm or less; Components for semiconductor manufacturing equipment.

3. When viewed from above, the opening of the base plate through hole and the coolant flow path do not overlap. The semiconductor manufacturing equipment member according to claim 1 or 2.

4. The C-chamfered opening is equal to or smaller than C2. The semiconductor manufacturing equipment member according to claim 1 or 2.

5. The thermal conductivity of the adhesive layer is 0.5 W / mK or more. The semiconductor manufacturing equipment member according to claim 1 or 2.

Images