Information processing device, information processing method, and computer-readable recording medium

Abstract

To provide an information processing device, an information processing method, and a computer-readable recording medium capable of forming a structure such as a membrane on a substrate with high accuracy.SOLUTION: An information processing device according to an embodiment includes a prediction unit that calculates the predicted film thickness when the substrate is processed by a substrate processing device on the basis of a film thickness model indicating a relationship between the state of the substrate processing device and the film thickness of a coating film formed on the surface of a substrate by the substrate processing device, and prior data indicating the state of the substrate processing device before the substrate is processed by the substrate processing device, and an output unit that outputs instruction information regarding the processing of the substrate on the basis of the predicted film thickness before the substrate is processed by the substrate processing device.SELECTED DRAWING: Figure 7

Description

[Technical Field]

[0001] This disclosure relates to an information processing device, an information processing method, and a computer-readable recording medium. [Background technology]

[0002] Patent Document 1 discloses an apparatus for calculating the thickness of a film formed on a substrate based on an image of the substrate surface. [Prior art documents] [Patent Documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2015-215193 [Overview of the project] [Problems that the invention aims to solve]

[0004] This disclosure describes an information processing apparatus, an information processing method, and a computer-readable recording medium capable of forming structures such as films on a substrate with high precision. [Means for solving the problem]

[0005] An example of an information processing device includes a prediction unit configured to calculate a predicted film thickness when the substrate is processed by the substrate processing device, based on a film thickness model representing the relationship between the state of the substrate processing device and the film thickness of the coating film formed on the surface of the substrate by the substrate processing device, and prior data indicating the state of the substrate processing device before the substrate is processed by the substrate processing device, and an output unit that outputs instruction information regarding the processing of the substrate based on the predicted film thickness before the substrate is processed by the substrate processing device. [Effects of the Invention]

[0006] According to the information processing apparatus, information processing method, and computer-readable recording medium relating to this disclosure, it becomes possible to form structures such as films on a substrate with high precision.

Brief Description of the Drawings

[0007] [Figure 1] FIG. 1 is a perspective view showing an example of a substrate processing system. [Figure 2] FIG. 2 is a side view schematically showing the inside of the substrate processing system of FIG. 1. [Figure 3] FIG. 3 is a top view schematically showing the inside of the substrate processing system of FIG. 1. [Figure 4] FIG. 4 is a side view schematically showing an example of a liquid processing unit. [Figure 5] FIG. 5 is a top view schematically showing an example of a heat treatment unit. [Figure 6] FIG. 6 is a block diagram showing an example of a substrate processing system. [Figure 7] FIG. 7 is a block diagram showing an example of a controller. <� [Figure 8] FIG. 8 is a schematic diagram showing an example of the hardware configuration of a controller. [Figure 9] FIG. 9 is a flowchart for explaining an example of a procedure for forming a resist film on the surface of a substrate. [Figure 10] FIG. 10 is a flowchart for explaining an example of a procedure for forming a resist pattern on the surface of a substrate. [Figure 11] FIG. 11 is a block diagram showing another example of a controller. [Figure 12] FIG. 12 is a block diagram showing another example of a controller. [Figure 13] FIG. 13 is a block diagram showing another example of a controller. ]] [Figure 14] FIG. 14 is a block diagram showing another example of a controller. [Figure 15] FIG. 15 is a block diagram showing another example of a controller.

Modes for Carrying Out the Invention

[0008] In the following explanation, the same symbol will be used for identical elements or elements with the same function, and redundant explanations will be omitted.

[0009] [Circuit board processing system] First, the configuration of the substrate processing system 1 will be described with reference to Figures 1 to 3. The substrate processing system 1 comprises a coating and developing apparatus 2 (substrate processing apparatus), an exposure apparatus 3, and a controller Ctr (information processing apparatus).

[0010] The exposure apparatus 3 is configured to exchange the substrate W with the coating and developing apparatus 2 and to perform exposure processing (pattern exposure) of the resist film R (coating film) formed on the surface Wa (see Figure 4, etc.) of the substrate W. The exposure apparatus 3 may selectively irradiate the portion of the resist film R to be exposed with energy rays by methods such as immersion exposure.

[0011] Energy rays may include, for example, ionizing radiation and non-ionizing radiation. Ionizing radiation is radiation that has sufficient energy to ionize atoms or molecules. Ionizing radiation may include, for example, extreme ultraviolet (EUV), electron beams, ion beams, X-rays, alpha rays, beta rays, gamma rays, heavy ion beams, and proton beams. Non-ionizing radiation is radiation that does not have sufficient energy to ionize atoms or molecules. Non-ionizing radiation may include, for example, g-rays, i-rays, KrF excimer lasers, ArF excimer lasers, and F2 excimer lasers.

[0012] The coating and developing apparatus 2 is configured to form a resist film R on the surface Wa of the substrate W before the exposure treatment by the exposure apparatus 3. The coating and developing apparatus 2 is configured to perform a developing treatment on the resist film R after the exposure treatment.

[0013] The substrate W may be disc-shaped, or it may be a plate shape other than circular, such as a polygon. The substrate W may have a notch in which a part is cut out. The notch may be, for example, a notch (groove such as U-shaped or V-shaped), or a straight section extending in a straight line (a so-called orientation flat). The substrate W may be, for example, a semiconductor substrate (silicon wafer), a glass substrate, a mask substrate, an FPD (Flat Panel Display) substrate, or various other types of substrates. The diameter of the substrate W may be, for example, about 200 mm to 450 mm.

[0014] As shown in Figures 1 to 3, the coating and developing apparatus 2 comprises a carrier block 4, a processing block 5, and an interface block 6. The carrier block 4, processing block 5, and interface block 6 are arranged horizontally.

[0015] The carrier block 4 includes a carrier station 12 and an loading / unloading section 13. The carrier station 12 supports a plurality of carriers 11 (container containers). Each carrier 11 contains at least one substrate W in a sealed state. The side 11a of each carrier 11 is provided with an opening / closing door (not shown) for loading and unloading the substrate W. The carriers 11 are detachably installed on the carrier station 12 such that their side 11a faces the loading / unloading section 13.

[0016] The loading / unloading section 13 is located between the carrier station 12 and the processing block 5. As shown in Figures 1 and 3, the loading / unloading section 13 has a plurality of opening / closing doors 13a. When the carrier 11 is placed on the carrier station 12, the opening / closing doors of the carrier 11 are positioned to face the opening / closing doors 13a. By simultaneously opening the opening / closing doors 13a and the opening / closing doors on the side 11a, the inside of the carrier 11 and the inside of the loading / unloading section 13 are connected. As shown in Figures 2 and 3, the loading / unloading section 13 incorporates a transport arm A1. The transport arm A1 is configured to take the substrate W from the carrier 11 and pass it to the processing block 5, and to receive the substrate W from the processing block 5 and return it to the carrier 11.

[0017] As shown in Figure 2, processing block 5 includes processing modules PM1 to PM4, a film thickness measurement unit U3 (processing chamber), and a line width measurement unit U4 (processing chamber).

[0018] The processing module PM1 is configured to form an underlayer film on the surface of a substrate W and is also called a BCT module. As shown in Figure 3, the processing module PM1 includes a liquid processing unit U1 (processing chamber), a heat processing unit U2 (processing chamber), and a transport arm A2 configured to transport the substrate W to these. The liquid processing unit U1 of the processing module PM1 may be configured, for example, to apply a coating liquid for underlayer film formation to the substrate W. The heat processing unit U2 of the processing module PM1 may be configured, for example, to perform a heat treatment to cure the coating film formed on the substrate W by the liquid processing unit U1 to form an underlayer film. An example of an underlayer film is an anti-reflective (SiARC) film.

[0019] The processing module PM2 is configured to form an interlayer (hard mask) on a lower layer film and is also called an HMCT module. The processing module PM2 includes a liquid processing unit U1, a heat processing unit U2, and a transport arm A3 configured to transport the substrate W to these units. The liquid processing unit U1 of the processing module PM2 may be configured, for example, to apply a coating liquid for interlayer formation to the substrate W. The heat processing unit U2 of the processing module PM2 may be configured, for example, to perform a heat treatment to cure the coating film formed on the substrate W by the liquid processing unit U1 to form an interlayer. Examples of interlayers include SOC (Spin On Carbon) films and amorphous carbon films.

[0020] The processing module PM3 is configured to form a thermosetting and photosensitive resist film R on an interlayer and is also called a COT module. The processing module PM3 includes a liquid processing unit U1, a heat processing unit U2, and a transport arm A4 configured to transport a substrate W to these units. The liquid processing unit U1 of the processing module PM3 may be configured, for example, to apply a coating liquid for resist film formation to the substrate W. The heat processing unit U2 of the processing module PM3 may be configured, for example, to perform a heat treatment (PAB: Pre-Applied Bake) to cure the coating film formed on the substrate W by the liquid processing unit U1 into a resist film R.

[0021] The processing module PM4 is configured to perform development processing on the exposed resist film and is also called the DEV module. The processing module PM4 includes a liquid processing unit U1, a heat processing unit U2, and a transport arm A5 configured to transport the substrate W to these units. The liquid processing unit U1 of the processing module PM4 may be configured, for example, to partially remove the resist film R to form a resist pattern (not shown). The heat processing unit U2 of the processing module PM4 may be configured, for example, to perform heat treatment before development (PEB: Post Exposure Bake), heat treatment after development (PB: Post Bake), etc.

[0022] The film thickness measurement unit U3 is configured to measure the film thickness of the resist film R formed on the surface Wa of the substrate W by the processing module PM3. The line width measurement unit U4 is configured to measure the line width of the resist pattern formed on the surface Wa of the substrate W by the processing module PM4. The film thickness measurement unit U3 and the line width measurement unit U4 may be integrated. That is, both film thickness and line width may be measured by a single unit. The film thickness measurement unit U3 may measure the film thickness based on an image captured by a camera, for example, or by irradiation with laser light or the like. Similarly, the line width measurement unit U4 may measure the film thickness based on an image captured by a camera, for example, or by irradiation with laser light or the like.

[0023] Processing block 5 includes a shelf unit 14 located near the carrier block 4, as shown in Figures 2 and 3. The shelf unit 14 extends vertically and includes multiple cells arranged vertically. A transport arm A6 is provided near the shelf unit 14. The transport arm A6 is configured to raise and lower the substrate W between the cells of the shelf unit 14.

[0024] Processing block 5 includes shelf unit 15 located near interface block 6. Shelf unit 14 extends vertically and includes multiple cells arranged vertically.

[0025] Interface block 6 incorporates a transport arm A7 and is connected to the exposure device 3. The transport arm A7 is configured to take the substrate W from shelf unit 15 and pass it to exposure device 3, and to receive the substrate W from exposure device 3 and return it to shelf unit 15.

[0026] As shown in Figures 1 to 3, a sensor unit SE (sensor) may be located inside or outside the coating and developing apparatus 2. The sensor unit SE located outside the coating and developing apparatus 2 may be attached to the outer wall surface of the coating and developing apparatus 2, as shown in Figure 1 or Figure 2.

[0027] The sensor unit SE inside the coating and developing apparatus 2 may be located in a place where the substrate W may be present within the coating and developing apparatus 2, as shown in Figure 2 or Figure 3. For example, the sensor unit SE may be located inside the carrier 11, inside the liquid processing unit U1 of the processing modules PM1 to PM4, inside the heat processing unit U2 of the processing modules PM1 to PM4, inside the cells of the shelf units 14 and 15, or in the transport path of the substrate W by the transport arms A1 to A7, etc. (i.e., outside each unit U1 to U4, etc.).

[0028] The sensor unit SE may include at least one sensor selected from the group consisting of, for example, a temperature sensor, a humidity sensor, a pressure sensor, an anemometer sensor, a differential pressure sensor, a thermographic camera, and a viscosity sensor. The temperature sensor may be configured to measure the temperature of its surrounding environment. The humidity sensor may be configured to measure the relative humidity of its surrounding environment. The pressure sensor may be configured to measure the atmospheric pressure of its surrounding environment. The anemometer sensor may be configured to measure the wind speed of its surrounding environment. The differential pressure sensor may be configured to measure the differential pressure inside and outside the coating and developing apparatus 2 (for example, the differential pressure between the inside of each unit U1 to U4 and the outside of the coating and developing apparatus 2). The thermographic camera may be configured to measure the temperature distribution of, for example, the substrate W or the cooling plate 81 (described later) inside the heat treatment unit U2. The viscosity sensor may be configured to measure the viscosity of the resist solution used in the processing module PM3.

[0029] The coating and developing apparatus 2 further includes a display 16 (display device). The display 16 is configured to display various information on its screen. The information displayed on the display 16 may include, for example, processing conditions for the substrate W (e.g., a pre-set recipe, conditions calculated by the controller Ctr, etc.), an image of the substrate W, data acquired by the sensor unit SE (pre-data, post-data), film thickness data measured by the film thickness measurement unit U3 (actual film thickness), line width data measured by the line width measurement unit U4 (actual line width), and the results of analysis of various data by the controller Ctr (e.g., predicted film thickness, predicted line width, film thickness model, line width model, etc., as described later).

[0030] The controller Ctr is configured to partially or entirely control the coating and developing apparatus 2. Details of the controller Ctr will be described later. The controller Ctr may also be configured to send and receive signals to and from the controller of the exposure apparatus 3, and to control the substrate processing system 1 as a whole in cooperation with the controller of the exposure apparatus 3.

[0031] [Liquid Processing Unit] Next, with reference to Figure 4, the liquid treatment unit U1 will be described in more detail. The liquid treatment unit U1 comprises a substrate holding section 20, a liquid supply section 30, a liquid supply section 40, a cover member 50, and a blower B.

[0032] The substrate holding unit 20 includes a rotating unit 21, a shaft 22, and a holding unit 23. The rotating unit 21 operates based on an operation signal from the controller Ctr and is configured to rotate the shaft 22. The rotating unit 21 is a power source, such as an electric motor. The holding unit 23 is provided at the tip of the shaft 22. The substrate W is placed on the holding unit 23. The holding unit 23 is configured to hold the substrate W in a substantially horizontal position, for example, by suction. That is, the substrate holding unit 20 rotates the substrate W around a central axis (rotation axis) perpendicular to the surface Wa of the substrate W, while the substrate W is in a substantially horizontal position. Inside the liquid processing unit U1, the sensor unit SE may be positioned above the substrate holding unit 20.

[0033] The liquid supply unit 30 is configured to supply a processing liquid L1 to the surface Wa of the substrate W. The processing liquid L1 of processing module PM1 may be, for example, a coating liquid for forming a lower layer film. The processing liquid L1 of processing module PM2 may be, for example, a coating liquid for forming an intermediate film. The processing liquid L1 of processing module PM3 may be, for example, a resist liquid for forming a resist film R. The processing liquid L1 of processing module PM4 may be, for example, a developer. The resist material contained in the resist liquid may be a positive-type resist material or a negative-type resist material. A positive-type resist material is a resist material in which the pattern exposure area dissolves and the pattern unexposed area (light-shielded area) remains. A negative-type resist material is a resist material in which the pattern unexposed area (light-shielded area) dissolves and the pattern exposure area remains.

[0034] The liquid supply unit 30 includes a supply mechanism 31 and a nozzle 32. The supply mechanism 31 is configured to dispense processing liquid L1 stored in a container (not shown) using a liquid delivery mechanism (not shown), such as a pump, based on a signal from the controller Ctr. The supply mechanism 31 is configured to move the nozzle 32 in the height and horizontal directions based on a signal from the controller Ctr. The nozzle 32 is configured to discharge the processing liquid L1 supplied from the supply mechanism 31 onto the surface Wa of the substrate W.

[0035] The liquid supply unit 40 is configured to supply a processing liquid L2 to the surface Wa of the substrate W. The processing liquid L2 of processing module PM1 may be, for example, a chemical solution (e.g., an organic solvent) for removing the peripheral portion of the lower layer film. The processing liquid L2 of processing module PM2 may be, for example, a chemical solution (e.g., an organic solvent) for removing the peripheral portion of the interlayer film. The processing liquid L2 of processing module PM3 may be, for example, a chemical solution (e.g., an organic solvent) for removing the peripheral portion of the resist film R, or a chemical solution (e.g., an organic solvent) supplied to the surface Wa of the substrate W prior to coating the resist solution, for the purpose of improving the fluidity of the resist solution on the surface Wa of the substrate W. The processing liquid L2 of processing module PM4 may be, for example, a rinsing solution.

[0036] The liquid supply unit 40 includes a supply mechanism 41 and a nozzle 42. The supply mechanism 41 is configured to dispense processing liquid L2 stored in a container (not shown) using a liquid delivery mechanism (not shown), such as a pump, based on a signal from the controller Ctr. The supply mechanism 41 is configured to move the nozzle 42 in the height and horizontal directions based on a signal from the controller Ctr. The nozzle 42 is configured to discharge the processing liquid L2 supplied from the supply mechanism 41 onto the surface Wa of the substrate W.

[0037] The cover member 50 is provided around the substrate holding portion 20. The cover member 50 includes a main body 51, a drain port 52, and an exhaust port 53. The main body 51 is configured as a liquid collection container that receives the processing liquids L1 and L2 supplied to the substrate W for processing the substrate W. The drain port 52 is provided at the bottom of the main body 51 and is configured to discharge the waste liquid collected by the main body 51 to the outside of the liquid processing unit U1. The exhaust port 53 is provided at the bottom of the main body 51 and is configured to discharge the downflow (down blow) that has flowed around the substrate W to the outside of the liquid processing unit U1.

[0038] Blower B is positioned above the substrate holding portion 20 and the cover member 50 in the liquid processing unit U1. Blower B is configured to form a downward flow toward the cover member 50 based on a signal from the controller Ctr.

[0039] [Configuration of the heat treatment unit] Next, the configuration of the heat treatment unit U2 will be described with reference to Figure 5. The heat treatment unit U2 includes a heating section 70 for heating the substrate W and a cooling section 80 for cooling the substrate W, both located within a housing 60. The housing 60 has an inlet / outlet 61 for loading and unloading the substrate W near the cooling section 80. Within the housing 60, the sensor unit SE may be located near the inlet / outlet 61. The differential pressure sensor of the sensor unit SE may be located on the opposite side of the housing 60 from the inlet / outlet 61.

[0040] The heating unit 70 includes a heating plate 71 and a lifting mechanism 72. The heating plate 71 is configured to heat a substrate W placed on its upper surface based on instructions from the controller Ctr. The lifting mechanism 72 includes three lifting pins 72a configured to move up and down based on instructions from the controller Ctr. Each lifting pin 72a is inserted through a through hole 71a provided in the heating plate 71.

[0041] The cooling unit 80 includes a cooling plate 81 and a lifting mechanism 82. The cooling plate 81 is configured to cool the substrate W placed on its upper surface based on instructions from the controller Ctr. The cooling plate 81 is configured to be movable between a position near the input / output port 61 and a position near the heating plate 71 based on instructions from the controller Ctr. The lifting mechanism 82 includes three lifting pins 82a configured to be raised and lowered based on instructions from the controller Ctr. Each lifting pin 82a is inserted through a slit 81a provided in the cooling plate 81.

[0042] When a substrate W is loaded into the heat treatment unit U2, the lifting mechanism 82 raises the lifting pin 82a so that its tip protrudes above the cooling plate 81. Next, when the substrate W loaded into the housing 60 is placed on the tip of the lifting pin 82a, the lifting mechanism 82 lowers the lifting pin 82a to below the cooling plate 81. This transfers the substrate W from the lifting pin 82a to the cooling plate 81.

[0043] Next, the cooling plate 81 moves above the heating plate 71. In this state, the lifting mechanism 72 raises the lifting pin 72a so that the tip of the lifting pin 72a protrudes above the cooling plate 81. This transfers the substrate W from the cooling plate 81 to the lifting pin 72a. Next, the cooling plate 81 moves near the loading / unloading port 61. In this state, the lifting mechanism 72 lowers the lifting pin 72a to below the heating plate 71. This transfers the substrate W from the lifting pin 72a to the heating plate 71. When the substrate W is to be unloaded from the heat treatment unit U2, the reverse operation is performed.

[0044] [Controller Details] Next, the details of the controller Ctr will be explained with reference to Figures 6 to 8. As shown in Figure 6, the controller Ctr includes a memory unit M1, a film thickness-related processing unit M2, and a line width-related processing unit M3 as functional modules. These functional modules are merely a convenient division of the controller Ctr's functions into multiple modules, and do not necessarily mean that the hardware constituting the controller Ctr is divided into such modules. Each functional module is not limited to being realized by program execution, but may also be realized by a dedicated electrical circuit (e.g., a logic circuit) or an integrated circuit (ASIC: Application Specific Integrated Circuit) that integrates these.

[0045] The storage unit M1 is configured to store various types of data. For example, the storage unit M1 may store programs read from a computer-readable recording medium RM, setting data input from an operator via an external input device (not shown), etc. The program may be configured to operate various parts of the coating and developing apparatus 2. The recording medium RM may be, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or a magneto-optical recording disk.

[0046] The memory unit M1 may include, as a functional module, a pre-data storage unit M11, a post-data storage unit M12, a film thickness measurement value storage unit M13, a line width measurement value storage unit M14, a film thickness model storage unit M15, and a line width model storage unit M16.

[0047] The pre-data storage unit M11 may be configured to store data measured by the sensor unit SE before the substrate W is processed as pre-data. For example, the pre-data storage unit M11 may be configured to store data measured by the sensor unit SE at the time the carrier 11 containing the substrate W is placed on the carrier station 12 of the coating and developing apparatus 2 as pre-data.

[0048] The post-processing data storage unit M12 may be configured to store data measured by the sensor unit SE at a point in time after the substrate W has been processed as post-processing data. For example, the post-processing data storage unit M12 may be configured to store data measured by the sensor unit SE at a point in time after the substrate W has been liquid-treated by the liquid-treatment unit U1 as post-processing data after liquid treatment. After liquid treatment includes, for example, the point in time after a resist film R is formed on the surface Wa of the substrate W, and the point in time after the resist film R is developed and a resist pattern is formed on the surface Wa of the substrate W. The post-processing data storage unit M12 may be configured to store data measured by the sensor unit SE at a point in time after the substrate W has been heat-treated by the heat-treatment unit U2 as post-processing data after heat treatment.

[0049] The actual film thickness measurement value storage unit M13 may be configured to store the film thickness of the resist film R measured by the film thickness measurement unit U3. The actual line width measurement value storage unit M14 may be configured to store the line width of the resist pattern measured by the line width measurement unit U4.

[0050] The film thickness model storage unit M15 may be configured to store a film thickness model that represents the relationship between the state of the coating and developing apparatus 2 and the predicted value (predicted film thickness) of the resist film R formed on the surface Wa of the substrate W by the coating and developing apparatus 2. The film thickness model may be, for example, a model obtained empirically by processing the substrate W under different processing conditions and obtaining the film thickness of multiple resist films R, a model obtained physically by computer simulation, or a model that combines these models. Alternatively, the film thickness model may be a model generated by machine learning based on learning data that has accumulated records associating the state of the coating and developing apparatus 2 with the film thickness of the resist film R formed on the surface Wa of the substrate W by the coating and developing apparatus 2. An example of a film thickness model includes a multiple regression equation generated by multiple regression analysis. The multiple regression equation for film thickness is given by parameters y, a1~a k ,α1~α k ,e,k y: Target variable (predicted film thickness) a1~a k Explanatory variables (processing conditions for substrate W) α1~α k : Partial regression coefficient e: error k: a natural number greater than or equal to 2 In this case, it may be defined by Equation 1. y = α1·a1 + α2·a2 + ... + α k ·a k +e ···(1)

[0051] The line width model storage unit M16 may be configured to store a line width model representing the relationship between the state of the coating and developing apparatus 2 and the predicted value (predicted line width) of the line width of the resist pattern formed on the surface Wa of the substrate W by the coating and developing apparatus 2. The line width model may be, for example, a model empirically obtained by processing the substrate W under different processing conditions to acquire the line widths of a plurality of resist patterns, a model physically obtained by simulation on a computer, or a model in which these models are combined. Further, the line width model may be a model generated by machine learning based on learning data in which records associating the state of the coating and developing apparatus 2 and the line width of the resist pattern formed on the surface Wa of the substrate W by the coating and developing apparatus 2 are accumulated. An example of the line width model includes a multiple regression equation generated by multiple regression analysis. The multiple regression equation for the line width includes parameters z, b1 to b m , β1 to β m , f, m as z: Dependent variable (predicted line width) b1 to b m : Explanatory variables (processing conditions of the substrate W) β1 to β m : Partial regression coefficients f: Error m: A natural number of 2 or more When defined as such, it may be defined by Equation 2. z = β1·b1 + β2·b2 + ··· + β k ·b k + f ···(2)

[0052] The partial regression coefficients α1 to α k may include at least one value selected from the group consisting of a value corresponding to the temperature of the surrounding environment in which the substrate W is processed, a value corresponding to the relative humidity of the surrounding environment in which the substrate W is processed, a value corresponding to the atmospheric pressure of the surrounding environment in which the substrate W is processed, a value corresponding to the wind speed of the surrounding environment in which the substrate W is processed, a value corresponding to the viscosity of the resist liquid applied to the substrate W, a value corresponding to the type of organic solvent supplied to the substrate W, a value corresponding to the temperature distribution of the substrate W, a value corresponding to the atmospheric pressure difference between the surrounding environment in which the substrate W is processed and the outside of the coating and developing apparatus 2, and a value corresponding to the structure of the cover member 50. The partial regression coefficients β1 to β kThe same applies to the latter.

[0053] The film thickness processing unit M2 is configured to perform a process to form a resist film R of a predetermined thickness on the surface Wa of the substrate W to be processed, based on various data stored in the storage unit M1. As shown in Figures 6 and 7, the film thickness processing unit M2 includes a prediction unit M21, an output unit M20, an update unit M23, and a control unit M25.

[0054] As shown in Figure 7, the prediction unit M21 is configured to calculate the predicted film thickness y of the resist film R to be formed on the surface Wa of the substrate W to be processed, based on the prior data stored in the prior data storage unit M11 and the film thickness model (Equation 1) stored in the film thickness model storage unit M15.

[0055] The output unit M20 outputs instruction information regarding the processing of the substrate W based on the predicted film thickness y before the substrate W is processed by the coating and developing apparatus 2. For example, the output unit M20 has a calculation unit M22 and a determination unit M24.

[0056] The calculation unit M22 is configured to calculate processing conditions for the substrate W that are suitable for obtaining the predicted film thickness y calculated by the prediction unit M21. These processing conditions are an example of the instruction information described above. These processing conditions may be, for example, the rotation speed of the substrate W by the substrate holding unit 20 in the liquid processing unit U1 of the processing module PM3. Since there is a predetermined correlation between the rotation speed of the substrate W and the film thickness of the resist film R obtained at that rotation speed, the equation for this correlation may be determined in advance by experimentation. The calculation unit M22 may calculate the rotation speed of the substrate W to be processed by applying the predicted film thickness y to this equation.

[0057] The decision unit M24 is configured to output instruction information (hereinafter referred to as "continuation / failure information") indicating whether or not to continue processing the substrate W based on the predicted film thickness y calculated by the prediction unit M21. The decision unit M24 may, for example, output the continuation / failure information based on whether or not the predicted film thickness y calculated by the prediction unit M21 is within a predetermined design value range. For example, the decision unit M24 may be configured to display the continuation / failure information on the display 16, as shown in Figure 6.

[0058] The update unit M23 is configured to update the film thickness model stored in the film thickness model storage unit M15 based on the post-event data stored in the post-event data storage unit M12 and the measured film thickness values ​​stored in the measured film thickness value storage unit M13. The update unit M23 also takes the post-event data and the measured film thickness values ​​into consideration, for example, to update the partial regression coefficients α1~α k The system is configured to recalculate the film thickness model. The updated film thickness model is stored in the film thickness model storage unit M15. When updating the film thickness model, the update unit M23 may further use the processing conditions calculated by the calculation unit M22.

[0059] As shown in Figures 6 and 7, the control unit M25 is configured to control the coating and developing apparatus 2 based on the processing conditions calculated by the calculation unit M22. The control unit M25 may, for example, control the substrate holding unit 20 in the liquid processing unit U1 so that the substrate W rotates at the rotation speed of the substrate W calculated by the calculation unit M22. The judgment unit M24 may also output continuation feasibility information to the control unit M25. If the continuation feasibility information output from the judgment unit M24 to the control unit M25 indicates that continuation is not possible, the control unit M25 may control the coating and developing apparatus 2 to stop processing the substrate W.

[0060] The line width processing unit M3 is configured to perform processing to form a resist pattern of a predetermined line width on the surface Wa of the substrate W to be processed, based on various data stored in the storage unit M1. As shown in Figures 6 and 7, the line width processing unit M3 includes a prediction unit M31, an output unit M30, an update unit M33, and a control unit M35.

[0061] As shown in Figure 7, the prediction unit M31 is configured to calculate the predicted line width z of the resist pattern to be formed on the surface Wa of the substrate W to be processed, based on the prior data stored in the prior data storage unit M11 and the line width model (Equation 2) stored in the line width model storage unit M16. The prediction unit M31 may also use the measured film thickness values ​​stored in the measured film thickness value storage unit M13 when calculating the predicted line width z.

[0062] The output unit M20 outputs instruction information regarding the processing of the substrate W based on the predicted line width z before the substrate W is processed by the coating and developing apparatus 2. For example, the output unit M30 has a calculation unit M32 and a determination unit M34.

[0063] The calculation unit M32 is configured to calculate processing conditions for the substrate W suitable for obtaining the predicted line width z, based on the predicted line width z calculated by the prediction unit M31. These processing conditions are an example of the instruction information described above. These processing conditions may be, for example, the temperature of the heat treatment (PEB) in the heat treatment unit U2 of the processing module PM4. Since there is a predetermined correlation between the PEB temperature and the line width of the resist pattern obtained at that temperature, the equation for this correlation may be determined in advance by experiment. The calculation unit M32 may calculate the PEB temperature of the substrate W to be processed by applying the predicted line width z to this equation.

[0064] The decision unit M34 is configured to output instruction information (hereinafter referred to as "continuation / failure information") indicating whether or not to continue processing the substrate W based on the predicted line width z calculated by the prediction unit M31. The decision unit M34 may output the continuation / failure information based, for example, whether or not the predicted line width z calculated by the prediction unit M31 is within a predetermined design value range. For example, the decision unit M34 may be configured to display the continuation / failure information on the display 16, as shown in Figure 6.

[0065] The update unit M33 is configured to update the line width model stored in the line width model storage unit M16 based on the post-event data stored in the post-event data storage unit M12 and the measured line width values ​​stored in the line width measured value storage unit M14. The update unit M33 also takes the post-event data and the measured line width values ​​into consideration, for example, to update the partial regression coefficients β1~β m The system is configured to recalculate the line width model. The updated line width model is stored in the line width model storage unit M16. When updating the line width model, the update unit M33 may further use the processing conditions calculated by the calculation unit M32, or it may further use the measured film thickness values ​​stored in the film thickness model storage unit M15.

[0066] As shown in Figures 6 and 7, the control unit M35 is configured to control the coating and developing apparatus 2 based on the processing conditions calculated by the calculation unit M32. The control unit M35 may, for example, control the hot plate 71 in the heat treatment unit U2 to heat treat the substrate W at the PEB temperature calculated by the calculation unit M32. The judgment unit M34 may also output continuation feasibility information to the control unit M35. If the continuation feasibility information output from the judgment unit M34 to the control unit M35 indicates that continuation is not possible, the control unit M35 may control the coating and developing apparatus 2 to stop processing the substrate W.

[0067] The hardware of the controller Ctr may consist of, for example, one or more control computers. The controller Ctr includes circuit C1 as a hardware configuration, as shown in Figure 8. Circuit C1 may consist of electrical circuit elements. Circuit C1 may include a processor C2 (prediction unit, decision unit, update unit, calculation unit, control unit), memory C3 (storage unit), storage C4 (storage unit), driver C5, and input / output port C6.

[0068] Processor C2 executes programs in cooperation with at least one of memory C3 and storage C4, and configures each of the above-mentioned functional modules by performing signal input and output via input / output port C6. Memory C3 and storage C4 operate as storage unit M1. Driver C5 is a circuit that drives various devices of the coating and developing apparatus 2. Input / output port C6 performs signal input and output between driver C5 and various devices of the coating and developing apparatus 2 (e.g., liquid processing unit U1, heat processing unit U2, film thickness measurement unit U3, line width measurement unit U4, display 16, sensor unit SE, etc.).

[0069] The board processing system 1 may have one controller Ctr, or it may have a group of controllers (control unit) composed of multiple controllers Ctr. If the board processing system 1 has a group of controllers, each of the above-mentioned functional modules may be realized by one controller Ctr, or by a combination of two or more controllers Ctr. If the controller Ctr is composed of multiple computers (circuit C1), each of the above-mentioned functional modules may be realized by one computer (circuit C1), or by a combination of two or more computers (circuit C1). The controller Ctr may have multiple processors C2. In this case, each of the above-mentioned functional modules may be realized by one processor C2, or by a combination of two or more processors C2. Some of the functions of the controller Ctr of the board processing system 1 may be provided in a device separate from the board processing system 1, and connected to the board processing system 1 via a network to realize the various operations in this embodiment. For example, if the functions of the processor C2, memory C3, and storage C4 of multiple board processing systems 1 are combined and implemented in one or more separate devices, it becomes possible to remotely manage and control the information and operations of multiple board processing systems 1 in a unified manner.

[0070] [Resist film formation process] Next, with reference to Figures 7 and 9, a method for forming a resist film R on the surface Wa of the substrate W will be described.

[0071] First, at the start of processing the substrate W, at least one sensor unit SE located inside or outside the coating and developing apparatus 2 measures data and transmits it to the pre-data storage unit M11. As a result, the pre-data storage unit M11 acquires the pre-data (step S11 in Figure 9). The timing of acquiring the pre-data may be any timing from when the carrier 11 containing the substrate W to be subjected to the resist film formation process is placed on the carrier station 12 until just before the resist solution is supplied to the surface Wa of the substrate W.

[0072] Next, based on the prior data stored in the prior data storage unit M11 and the film thickness model (Equation 1) stored in the film thickness model storage unit M15, the prediction unit M21 calculates the predicted film thickness y of the resist film R (step S12 in Figure 9). Then, based on the predicted film thickness y output by the prediction unit M21, the determination unit M24 outputs the continuation feasibility information to the control unit M25 indicating whether or not to continue processing the target substrate W (step S13 in Figure 9). If the continuation feasibility information indicates that continuation is not possible (NO in step S13 in Figure 9), the control unit M25 stops the coating and developing apparatus 2. As a result, processing is completed without the resist film R being formed on the target substrate W.

[0073] On the other hand, if the continuation feasibility information indicates that continuation is possible (YES in step S13 of Figure 9), the calculation unit M22 calculates the processing conditions (rotation speed) for the target substrate W based on the predicted film thickness y calculated by the prediction unit M21 (step S14 of Figure 9). Next, the control unit M25 controls the liquid processing unit U1 of the processing module PM3 based on the processing conditions calculated by the calculation unit M22. As a result, a resist film R of a predetermined thickness (film thickness corresponding to the predicted film thickness y) is formed on the surface Wa of the target substrate W (step S15 of Figure 9).

[0074] Next, at least one sensor unit SE located inside or outside the coating and developing apparatus 2 measures the data and transmits it to the post-processing data storage unit M12. As a result, the post-processing data storage unit M12 acquires the post-processing data (step S16 in Figure 9). The timing of acquiring the post-processing data may be any timing from immediately after the resist film R is formed on the surface Wa of the target substrate W until the next processing is performed on the substrate W.

[0075] Next, the thickness of the resist film R formed on the surface Wa of the target substrate W is measured by the film thickness measurement unit U3 (step S17 in Figure 9). The data of the thickness of the resist film R measured by the film thickness measurement unit U3 (actual film thickness value) is stored in the actual film thickness value storage unit M13. Steps S16 and S17 may be performed in parallel, or step S17 may be performed before step S16.

[0076] Next, based on the post-event data stored in the post-event data storage unit M12 and the measured film thickness values ​​stored in the film thickness measurement value storage unit M13, the partial regression coefficients α1~α of the film thickness model stored in the film thickness model storage unit M15 are calculated. k The update unit M23 updates the model (step S18 in Figure 9). As a result, when subsequent substrates W are processed, the updated film thickness model is used. With this, the resist film formation process R on one substrate W is completed.

[0077] [Resist pattern formation process] Next, a method for forming a resist pattern on the surface Wa of the substrate W will be described with reference to Figures 7 and 10.

[0078] First, at the start of processing the substrate W, at least one sensor unit SE located inside or outside the coating and developing apparatus 2 measures data and transmits it to the pre-data storage unit M11. As a result, the pre-data storage unit M11 acquires the pre-data (step S21 in Figure 10). The timing of acquiring the pre-data can be any timing from when the carrier 11 containing the substrate W to be subjected to the resist pattern formation process is placed on the carrier station 12 until just before the developer is supplied to the resist film R on the surface Wa of the substrate W.

[0079] Next, the thickness of the resist film R formed on the surface Wa of the substrate W is measured by the film thickness measurement unit U3 (step S22 in Figure 10). The data on the thickness of the resist film R measured by the film thickness measurement unit U3 (actual film thickness value) is stored in the actual film thickness value storage unit M13. Alternatively, instead of measuring the actual film thickness value anew in this way, data already measured for the substrate W on which the resist pattern is to be formed (data measured in step S17 in Figure 9) may be used.

[0080] Next, the prior data stored in the prior data storage unit M11 and the line width model storage unit M16 line width Based on the model (Equation 2) and the measured film thickness stored in the film thickness measurement storage unit M13, the prediction unit M31 calculates the predicted line width z of the resist pattern (step S23 in Figure 10). Next, based on the predicted line width z calculated by the prediction unit M31, the determination unit M34 outputs the continuation feasibility information to the control unit M35 indicating whether or not to continue processing the target substrate W (step S24 in Figure 10). If the continuation feasibility information indicates that continuation is not possible (NO in step S24 in Figure 10), the control unit M35 stops the coating and developing apparatus 2. As a result, processing ends without a resist pattern being formed on the target substrate W.

[0081] On the other hand, if the continuation feasibility information indicates that continuation is possible (YES in step S24 of Figure 10), the calculation unit M32 calculates the processing conditions (PEB temperature) for the target substrate W based on the predicted line width z output by the prediction unit M31 (step S25 of Figure 10). Next, the control unit M35 controls the heat treatment unit U2 of the processing module PM4 based on the processing conditions calculated by the calculation unit M32. As a result, a resist pattern with a predetermined line width (a line width corresponding to the predicted line width z) is formed on the surface Wa of the target substrate W (step S26 of Figure 10).

[0082] Next, at least one sensor unit SE located inside or outside the coating and developing apparatus 2 measures the data and transmits it to the post-processing data storage unit M12. As a result, the post-processing data storage unit M12 acquires the post-processing data (step S27 in Figure 10). The timing of acquiring the post-processing data may be any timing from immediately after the resist pattern is formed on the surface Wa of the substrate W until the next processing is performed on the substrate W.

[0083] Next, the line width of the resist pattern formed on the surface Wa of the substrate W is measured by the line width measuring unit U4 (step S28 in Figure 10). The line width data of the resist pattern measured by the line width measuring unit U4 (actual line width value) is stored in the actual line width value storage unit M14. Steps S27 and S28 may be performed in parallel, or step S28 may be performed before step S27.

[0084] Next, based on the post-processing data stored in the post-processing data storage unit M12, the measured line width values ​​stored in the line width measurement value storage unit M14, the processing conditions calculated by the calculation unit M32, and the measured film thickness values ​​stored in the film thickness model storage unit M15, the partial regression coefficients β1~β of the line width model stored in the line width model storage unit M16 are calculated. m The update unit M33 updates the line width model (step S29 in Figure 10). As a result, the updated line width model is used when subsequent substrates W are processed. With this, the resist pattern formation process for one substrate W is completed.

[0085] [Effect] The film thickness of the resist film R and the line width of the resist pattern formed on the surface Wa of the substrate W correlate with various states of the coating and developing apparatus 2. Therefore, in the above example, a film thickness model expressing the predicted film thickness y as a function and a line width model expressing the predicted line width z as a function are prepared in advance, and by applying prior data indicating various states of the coating and developing apparatus 2 to these models, the film thickness and line width on the substrate W to be processed are predicted. As a result, the future processing quality of the substrate W can be determined based on the predicted film thickness y or predicted line width z (so-called feedforward control). Consequently, by outputting instruction information regarding the processing of the substrate W based on the predicted film thickness y or predicted line width z, and executing the processing on the substrate W based on this instruction information, it becomes possible to form structures such as films (resist film R, resist pattern) on the substrate W with high precision without wasting the substrate W.

[0086] Incidentally, there is a certain correlation between the predetermined processing conditions (rotation speed) of the substrate W by the coating and developing apparatus 2 and the actual thickness of the resist film R obtained. Therefore, in the above example, this correlation is used to calculate the processing conditions (rotation speed) based on the predicted thickness y. As a result, it becomes possible to automatically set the processing conditions for the substrate W to be processed. Similarly, there is a certain correlation between the predetermined processing conditions (PEB temperature) of the substrate W by the coating and developing apparatus 2 and the actual line width of the resist pattern obtained. Therefore, in the above example, this correlation is used to calculate the processing conditions (PEB temperature) based on the predicted line width z. As a result, it becomes possible to automatically set the processing conditions for the substrate W to be processed.

[0087] In the above example, the coating and developing apparatus 2 is controlled based on the automatically set processing conditions for the substrate W. Therefore, it becomes possible to actually process the substrate W based on the automatically set processing conditions.

[0088] As shown in the above example, based on the predicted film thickness, instruction information is output indicating whether or not to continue processing the substrate W. By stopping the processing of the substrate W when this instruction information indicates that continuation is not possible, waste of the substrate W can be further reduced.

[0089] As shown in the above example, by preparing a line width model in which the predicted line width z is expressed as a function, and applying prior data indicating various states of the coating and developing apparatus 2 and the measured thickness of the resist film R formed on the surface Wa of the substrate W to this model, the line width of the substrate W to be processed can be predicted. In this case, the measured thickness is further used in calculating the predicted line width z. Therefore, it is possible to improve the accuracy of the predicted line width z.

[0090] As shown in the above example, the film thickness model is updated based on post-processing data and measured film thickness values. That is, the film thickness model is updated using various parameters from when the substrate W was actually processed. Therefore, it is possible to improve the accuracy of the film thickness model. Similarly, as shown in the above example, the line width model is updated based on post-processing data and measured line width values. That is, the line width model is updated using various parameters from when the substrate W was actually processed. Therefore, it is possible to improve the accuracy of the line width model.

[0091] According to the above examples, the film thickness model can be updated based on predetermined processing conditions (rotation speed) of the substrate W by the coating and developing apparatus 2, post-processing data, and measured film thickness. In this case, the number of parameters used to update the film thickness model increases, making it possible to improve the accuracy of the film thickness model. Similarly, according to the above examples, the line width model can be updated based on predetermined processing conditions (PEB temperature) of the substrate W by the coating and developing apparatus 2, post-processing data, and measured line width. In this case, the number of parameters used to update the line width model increases, making it possible to improve the accuracy of the line width model.

[0092] As shown in the above examples, the film thickness model is composed of a multiple regression equation consisting of multiple partial regression coefficients and multiple explanatory variables. In this case, it is possible to obtain a film thickness model that takes various factors into account relatively easily. Similarly, the line width model is composed of a multiple regression equation consisting of multiple partial regression coefficients and multiple explanatory variables. In this case, it is possible to obtain a line width model that takes various factors into account relatively easily.

[0093] In the above example, the sensor unit SE can be positioned above the substrate holding section 20 inside the liquid processing unit U1. In this case, due to the effect of the downdraft, the sensor unit SE is located upwind of the substrate holding section 20. Therefore, even if various processing liquids supplied to the substrate W are scattered from the substrate W, the sensor unit SE is less affected. Consequently, various data can be acquired by the sensor unit SE in an environment close to the substrate W. As a result, the accuracy of the model (film thickness model or line width model) and predicted values ​​(predicted film thickness or predicted line width) can be further improved.

[0094] [Differentiation] The disclosures herein should be considered in all respects to be illustrative and not restrictive. Various omissions, substitutions, and modifications may be made to the above examples without departing from the claims and the gist thereof.

[0095] (1) As shown in Figure 11, the calculation unit M22 may be configured to calculate the processing conditions for substrate W based on the measured film thickness values ​​stored in the measured film thickness value storage unit M13, which pertain to substrate W processed before the substrate W being processed this time (so-called feedback control). Similarly, the calculation unit M32 may be configured to calculate the processing conditions for substrate W based on the measured line width values ​​stored in the measured line width value storage unit M14, which pertain to substrate W processed before the substrate W being processed this time.

[0096] (2) To empirically obtain a film thickness model, a controller Ctr as illustrated in Figure 12 may be used. In this case, first, the control unit M25 processes the substrate W based on predetermined different processing conditions (recipe) and forms a resist film R on the surface Wa of the substrate W. Next, at least one sensor unit SE provided inside or outside the coating and developing apparatus 2 measures data and transmits the data to the post-processing data storage unit M12. Next, the film thickness of the resist film R formed on the surface Wa of the substrate W is measured by the film thickness measurement unit U3. The acquisition of post-processing data and the measurement of the film thickness of the resist film R may be performed in parallel, or one may be performed before the other. Next, based on the post-processing data stored in the post-processing data storage unit M12 and the actual film thickness values ​​stored in the actual film thickness value storage unit M13, the update unit M23 calculates the partial regression coefficients α1~α k This calculates the film thickness model used to calculate the predicted film thickness y.

[0097] Similarly, to empirically obtain a linewidth model, a controller Ctr illustrated in Figure 12 may be used. In this case, first, the control unit M35 processes the substrate W based on predetermined different processing conditions (recipe) to form a resist pattern on the surface Wa of the substrate W. Next, at least one sensor unit SE located inside or outside the coating and developing apparatus 2 measures data and transmits the data to the post-processing data storage unit M12. Next, the linewidth of the resist pattern formed on the surface Wa of the substrate W is measured by the linewidth measuring unit U4. The acquisition of post-processing data and the measurement of the linewidth of the resist pattern may be performed in parallel, or one may be performed before the other. Next, based on the post-processing data stored in the post-processing data storage unit M12 and the measured linewidth values ​​stored in the measured linewidth value storage unit M14, the update unit M33 calculates the partial regression coefficients β1~β m This calculates the line width model used to calculate the predicted line width z. The update unit M33 also uses the measured film thickness values ​​stored in the film thickness model storage unit M15 to calculate the partial regression coefficients β1 to β m You may calculate this.

[0098] (3) To empirically obtain a film thickness model, a controller Ctr as illustrated in Figure 13 may be used. In this case, unlike the example in Figure 12, the calculation unit M22 calculates the processing conditions for substrate W based on the measured film thickness of a substrate W processed before the substrate W to be processed this time (feedback control). Next, based on the calculated processing conditions, the subsequent substrate W is processed to form a resist film R on the surface Wa of substrate W. Next, at least one sensor unit SE provided inside or outside the coating and developing apparatus 2 measures data and transmits the data to the post-processing data storage unit M12. Next, the film thickness of the resist film R formed on the surface Wa of substrate W is measured by the film thickness measurement unit U3. The acquisition of post-processing data and the measurement of the film thickness of the resist film R may be performed in parallel, or one may be performed before the other. Next, based on the post-processing data stored in the post-processing data storage unit M12, the measured film thickness stored in the measured film thickness storage unit M13, and the processing conditions calculated by the calculation unit M22, the update unit M23 calculates the partial regression coefficients α1~α k This calculates the film thickness model used to calculate the predicted film thickness y.

[0099] Similarly, to empirically obtain a line width model, a controller Ctr as illustrated in Figure 13 may be used. In this case, unlike the example in Figure 12, the calculation unit M32 calculates the processing conditions for substrate W based on measured line width values ​​for substrate W processed before the substrate W to be processed this time (feedback control). Next, based on the calculated processing conditions, the subsequent substrate W is processed to form a resist pattern on the surface Wa of substrate W. Next, at least one sensor unit SE provided inside or outside the coating and developing apparatus 2 measures data and transmits the data to the post-processing data storage unit M12. Next, the line width of the resist pattern formed on the surface Wa of substrate W is measured by the line width measurement unit U4. The acquisition of post-processing data and the measurement of the thickness of the resist film R may be performed in parallel, or one may be performed before the other. Next, based on the post-processing data stored in the post-processing data storage unit M12, the measured line widths stored in the line width measurement value storage unit M14, and the processing conditions calculated by the calculation unit M32, the update unit M33 calculates the partial regression coefficients β1~βm This calculates the line width. In this way, the line width model used to calculate the predicted line width z is prepared.

[0100] (4) The judgment unit M24 may determine, as shown in Figure 14, whether there is an anomaly in the prior data that formed the basis for calculating the predicted film thickness y calculated by the prediction unit M21. The judgment unit M24 may be configured to identify a location near the sensor unit SE where the prior data was measured based on the anomaly in the prior data. Similarly, the judgment unit M34 may determine, as shown in Figure 14, whether there is an anomaly in the prior data that formed the basis for calculating the predicted line width z calculated by the prediction unit M31. The judgment unit M34 may be configured to identify a location near the sensor unit SE where the prior data was measured based on the anomaly in the prior data. The anomaly in the prior data may be determined using, for example, principal component analysis, the MT method (Maharanobis-Taguchi System), or the T method.

[0101] (5) As shown in Figure 15, the prediction unit M31 may further use the predicted film thickness y calculated by the prediction unit M21 when calculating the predicted line width z. In this case, the predicted film thickness y is further used in calculating the predicted line width z. Therefore, it is possible to improve the accuracy of the predicted line width z.

[0102] (6) The processing conditions calculated by the calculation unit M22 may be not only the rotation speed of the substrate W in the liquid processing unit U1 of the processing module PM3, but also the temperature or time of the heat treatment (PAB) in the heat treatment unit U2 of the processing module PM3. The control unit M25 may control the heat treatment unit U2 based on the calculated processing conditions (temperature or time of PAB).

[0103] (7) The processing conditions calculated by the calculation unit M32 may be not only the temperature of the heat treatment (PEB) in the heat treatment unit U2 of the processing module PM4, but also the time of the heat treatment (PEB) in the heat treatment unit U2 of the processing module PM4. Alternatively, the processing conditions calculated by the calculation unit M32 may be the development time of the resist film R in the liquid treatment unit U1 of the coating and developing apparatus 2, or the temperature of the developer.

[0104] (8) The thickness of the resist film R may be measured by a thickness measuring unit U3 located inside the coating and developing apparatus 2, or by an external measuring device located outside the coating and developing apparatus 2. Similarly, the line width of the resist pattern may be measured by a line width measuring unit U4 located inside the coating and developing apparatus 2, or by an external measuring device located outside the coating and developing apparatus 2.

[0105] (9) The above feedforward control or feedback control may be performed for each individual substrate W, or for each of multiple substrates W (each lot).

[0106] (10) The state of the coating and developing apparatus 2 may be estimated by a Kalman filter.

[0107] (11) The method for selecting explanatory variables when creating a film thickness model or line width model may be, for example, a variable increase method, a variable decrease method, a variable increase / decrease method, a method using artificial intelligence (such as a genetic algorithm), or a combination thereof.

[0108] [Other examples] Example 1. An example of an information processing device includes a prediction unit configured to calculate a predicted film thickness when a substrate is processed by a substrate processing device, based on a film thickness model representing the relationship between the state of the substrate processing device and the film thickness of the coating film formed on the surface of the substrate by the substrate processing device, and prior data indicating the state of the substrate processing device before processing the substrate by the substrate processing device, and an output unit that outputs instruction information regarding the processing of the substrate based on the predicted film thickness before the substrate is processed by the pre-substrate processing device. In this case, since various states of the substrate processing device correlate with the film thickness of the coating film formed on the surface of the substrate, the film thickness formed on the substrate can be predicted by inputting prior data into the film thickness model. Therefore, the future processing quality of the substrate can be determined based on the predicted film thickness (so-called feedforward control). Consequently, by outputting instruction information regarding the processing of the substrate based on the predicted film thickness or predicted line width, and executing processing on the substrate based on said instruction information, it becomes possible to form structures such as films on the substrate with high precision without wasting the substrate.

[0109] Example 2. The output unit of Example 1 may have a calculation unit configured to calculate processing conditions based on the predicted film thickness. Since there is a certain correlation between the processing conditions of the substrate and the film thickness, using the predicted film thickness makes it possible to automatically set the processing conditions for the substrate to be processed.

[0110] Example 3. The apparatus of Example 2 may further include a control unit configured to control the substrate processing apparatus based on processing conditions. In this case, it becomes possible to actually process the substrate based on automatically set processing conditions.

[0111] Example 4. Any output unit in Examples 1 to 3 may have a determination unit that outputs instruction information on whether or not to continue processing the board. By stopping the processing of the board W when the instruction information indicates that continuation is not possible, waste of the board W can be further reduced.

[0112] Example 5. Any of the apparatuses in Examples 1 to 4 may further include an update unit configured to update the film thickness model based on post-processing data indicating the state of the substrate processing apparatus when the substrate was processed, and the measured film thickness of the coating film formed on the surface of the substrate as a result of processing by the substrate processing apparatus. In this case, the film thickness model is updated using various parameters from when the substrate was actually processed. This makes it possible to improve the accuracy of the film thickness model.

[0113] Example 6. In the apparatus of Example 2, the update unit may be configured to update the film thickness model based on the processing conditions of the substrate by the substrate processing apparatus, post-processing data, and the measured film thickness. In this case, the film thickness model is updated using various parameters from when the substrate was actually processed. Therefore, it is possible to further improve the accuracy of the film thickness model.

[0114] Example 7. In any of the apparatuses in Examples 1 to 6, the film thickness model may be a multiple regression equation composed of multiple partial regression coefficients and multiple explanatory variables. In this case, it becomes possible to obtain a film thickness model that takes various factors into account relatively easily.

[0115] Example 8. Another example of an information processing apparatus includes a prediction unit configured to calculate a predicted line width when the substrate is processed by the substrate processing apparatus, based on a line width model representing the relationship between the state of the substrate processing apparatus and the line width of the pattern formed on the surface of the substrate by the substrate processing apparatus, and prior data indicating the state of the substrate processing apparatus before the substrate is processed by the substrate processing apparatus, and an output unit that outputs instruction information regarding the processing of the substrate based on the predicted line width before the substrate is processed by the substrate processing apparatus. In this case, the same effects and advantages as the apparatus in Example 1 can be obtained.

[0116] Example 9. The output unit of Example 8 may have a calculation unit configured to calculate processing conditions based on the predicted line width. In this case, the same effects and advantages as the apparatus in Example 2 can be obtained.

[0117] Example 10. The apparatus of Example 8 may further include a control unit configured to control the substrate processing apparatus based on processing conditions. In this case, the same effects and advantages as the apparatus of Example 3 can be obtained.

[0118] Example 11. Any output unit in Examples 8 to 10 may have a determination unit that outputs instruction information on whether or not to continue processing the substrate. In this case, the same effects and advantages as the apparatus in Example 4 can be obtained.

[0119] Example 12. Any apparatus from Examples 8 to 11 may further include an update unit configured to update the line width model based on post-processing data indicating the state of the substrate processing apparatus when the substrate is processed, and measured line width values ​​of the pattern formed on the surface of the substrate by the substrate processing apparatus. In this case, the same effects and advantages as the apparatus in Example 2 can be obtained.

[0120] Example 13. In the apparatus of Example 12, the update unit may be configured to update the line width model based on the processing conditions of the substrate by the substrate processing apparatus, post-processing data, and measured line width values. In this case, the same effects as the apparatus of Example 3 can be obtained.

[0121] Example 14. In any of the apparatuses in Examples 8 to 13, the prediction unit may be configured to calculate the predicted line width based on a line width model, prior data, and the measured thickness of the coating film formed on the surface of the substrate by processing the substrate with the substrate processing apparatus. In this case, the measured thickness is further used in calculating the predicted line width. Therefore, it is possible to improve the accuracy of the predicted line width.

[0122] Example 15. In any of the apparatuses in Examples 8 to 13, the prediction unit may be configured to calculate the predicted line width based on a line width model, prior data, and a film thickness model representing the relationship between the state of the substrate processing apparatus and the film thickness of the coating film formed on the substrate surface by the substrate processing apparatus. In this case, the predicted film thickness is further used in calculating the predicted line width. Therefore, it is possible to improve the accuracy of the predicted line width.

[0123] Example 16. In any of the devices from Examples 8 to 15, the linewidth model may be a multiple regression equation consisting of multiple partial regression coefficients and multiple explanatory variables. In this case, the same effects as the device in Example 6 can be obtained.

[0124] Example 17. In the apparatus of Example 7 or Example 16, the multiple partial regression coefficients may include at least one value selected from the group consisting of a value corresponding to the viscosity of the coating solution applied to the substrate, a value corresponding to the temperature inside the substrate processing apparatus, a value corresponding to the relative humidity inside the substrate processing apparatus, a value corresponding to the pressure difference inside and outside the substrate processing apparatus, a value corresponding to the wind speed inside the substrate processing apparatus, a value corresponding to the structure of the substrate processing apparatus, and a value corresponding to the type of organic solvent used for processing the substrate.

[0125] Example 18. In the apparatus of Examples 1 to 17, the prior data may include values ​​obtained by at least one sensor selected from the group consisting of a viscosity sensor configured to measure the viscosity of the coating liquid applied to the substrate, a temperature sensor configured to measure the temperature inside the substrate processing apparatus, a humidity sensor configured to measure the relative humidity inside the substrate processing apparatus, a differential pressure sensor configured to measure the pressure difference inside and outside the substrate processing apparatus, and an air velocity sensor configured to measure the air velocity inside the substrate processing apparatus.

[0126] Example 19. In the apparatus of Example 18, at least one sensor may be located inside or outside the processing chamber of the substrate processing apparatus.

[0127] Example 20. In the apparatus of Example 19, at least one sensor may be located outside the processing chamber of the substrate processing apparatus and in the substrate transport path or substrate container.

[0128] Example 21. In the apparatus of Example 19 or Example 20, at least one sensor may be positioned inside the processing chamber of the substrate processing apparatus and above the substrate holding section provided in the processing chamber. In the processing chamber, airflow normally flows downward toward the substrate (downflow). Therefore, various processing liquids used to process the substrate are prone to scattering downstream of the substrate. According to Example 19, various data can be acquired by the sensor in an environment close to the substrate without being affected by the various processing liquids. Therefore, it is possible to further improve the accuracy of the model (film thickness model or line width model) and predicted values ​​(predicted film thickness or predicted line width).

[0129] Example 22. An example of an information processing method includes calculating a predicted film thickness when the substrate is processed by the substrate processing apparatus, based on a film thickness model representing the relationship between the state of the substrate processing apparatus and the film thickness of the coating film formed on the surface of the substrate by the substrate processing apparatus, and prior data indicating the state of the substrate processing apparatus before processing the substrate by the substrate processing apparatus, and outputting instruction information regarding the processing of the substrate based on the predicted film thickness before the substrate is processed by the substrate processing apparatus. In this case, the same effects and advantages as the apparatus in Example 1 can be obtained.

[0130] Example 23. Another example of an information processing method includes calculating a predicted line width when the substrate is processed by the substrate processing apparatus, based on a line width model representing the relationship between the state of the substrate processing apparatus and the line width of the pattern formed on the surface of the substrate by the substrate processing apparatus, and prior data indicating the state of the substrate processing apparatus before the substrate is processed by the substrate processing apparatus, and outputting instruction information regarding the processing of the substrate based on the predicted line width before the substrate is processed by the substrate processing apparatus. In this case, the same effects and advantages as the apparatus in Example 1 can be obtained.

[0131] Example 24. A computer-readable recording medium may record a program causing an information processing device to execute the method of Example 22 or Example 23. In this case, the same effects as the apparatus of Example 1 can be obtained. In this specification, a computer-readable storage medium may include a non-transitory computer recording medium (e.g., various main memory or auxiliary memory devices) or a transmitted signal (e.g., a data signal that can be provided over a network). [Explanation of symbols]

[0132] 1...Substrate processing system, 2...Coating and developing apparatus (substrate processing apparatus), 3...Exposure apparatus, 11...Carrier (container), 16...Display (display device), 20...Substrate holding unit, Ctr...Controller (information processing apparatus), C2...Processor (prediction unit, judgment unit, update unit, calculation unit, control unit), C3...Memory (storage unit), C4...Storage (storage unit), M1...Storage unit, M11...Pre-data storage unit, M12...Post-data storage unit, M13...Measured film thickness storage unit, M14...Measured line width storage unit, M15...Film thickness model storage unit, M16...Line width model storage unit M2...Film thickness processing unit, M21...Prediction unit, M22...Calculation unit, M23...Update unit, M24...Decision unit, M25...Control unit, M3...Line width processing unit, M31...Prediction unit, M32...Calculation unit, M33...Update unit, M34...Decision unit, M35...Control unit, PM1~PM4...Processing module, R...Resist film (coated film), RM...Recording medium, SE...Sensor unit (sensor), U1...Liquid processing unit (processing chamber), U2...Heat processing unit (processing chamber), U3...Film thickness measurement unit (processing chamber), U4...Line width measurement unit (processing chamber), W...Substrate, Wa...Surface.

Claims

1. A prediction unit is configured to calculate a predicted line width when the substrate is processed by the substrate processing apparatus, based on a line width model representing the relationship between the state of the substrate processing apparatus and the line width of the pattern formed on the surface of the substrate by the substrate processing apparatus, and prior data indicating the state of the substrate processing apparatus before processing the substrate by the substrate processing apparatus. The substrate processing apparatus includes an output unit that outputs instruction information regarding the processing of the substrate based on the predicted line width before the substrate is processed by the substrate processing apparatus, The output unit is an information processing device having a determination unit that outputs instruction information on whether or not to continue processing the substrate based on a comparison between a predetermined range of design values ​​and the predicted line width.

2. The apparatus according to claim 1, wherein the output unit has a calculation unit configured to calculate the processing conditions for the substrate by the substrate processing apparatus based on the predicted line width when the determination unit determines that the predicted line width is within the range of a predetermined design value.

3. The apparatus according to claim 2, further comprising a control unit configured to control the substrate processing apparatus based on the processing conditions calculated by the calculation unit.

4. The apparatus according to any one of claims 1 to 3, wherein the determination unit is configured to display instruction information on a display indicating whether or not to continue processing the substrate before the substrate is processed by the substrate processing apparatus.

5. The output unit has a determination unit that outputs instruction information on whether or not to continue processing the substrate based on the predicted line width. The apparatus according to claim 3, wherein the determination unit is configured to output instruction information to the control unit indicating whether or not to continue processing the substrate before the substrate is processed by the substrate processing apparatus.

6. The apparatus according to any one of claims 1 to 5, further comprising an update unit configured to update the line width model based on post-processing data indicating the state of the substrate processing apparatus when the substrate is processed and measured line width values ​​of the pattern formed on the surface of the substrate by the substrate processing apparatus.

7. The apparatus according to claim 6, wherein the update unit is configured to update the line width model based on the processing conditions of the substrate by the substrate processing apparatus, the post-processing data, and the measured line width values.

8. The apparatus according to claim 6, wherein the update unit is configured to update the line width model based on the post-processing data, the measured line width value, and the measured thickness of the coating film formed on the surface of the substrate by processing the substrate with the substrate processing apparatus.

9. The apparatus according to any one of claims 1 to 8, wherein the prediction unit is configured to calculate the predicted line width based on the line width model, the prior data, and the measured thickness of the coating film formed on the surface of the substrate by processing the substrate with the substrate processing apparatus.

10. The apparatus according to any one of claims 1 to 8, wherein the prediction unit is configured to calculate the predicted line width based on the line width model, the prior data, and a film thickness model representing the relationship between the state of the substrate processing apparatus and the film thickness of the coating film formed on the surface of the substrate by the substrate processing apparatus.

11. The apparatus according to any one of claims 1 to 10, wherein the line width model is a multiple regression equation composed of a plurality of partial regression coefficients and a plurality of explanatory variables.

12. The apparatus according to claim 11, wherein the plurality of partial regression coefficients include at least one value selected from a group consisting of a value corresponding to the viscosity of the coating liquid applied to the substrate, a value corresponding to the temperature inside the substrate processing apparatus, a value corresponding to the relative humidity inside the substrate processing apparatus, a value corresponding to the pressure difference inside and outside the substrate processing apparatus, a value corresponding to the wind speed inside the substrate processing apparatus, a value corresponding to the structure of the substrate processing apparatus, and a value corresponding to the type of organic solvent used for processing the substrate.

13. The apparatus according to any one of claims 1 to 12, wherein the prior data includes values ​​obtained by at least one sensor selected from the group consisting of a viscosity sensor configured to measure the viscosity of a coating liquid applied to the substrate, a temperature sensor configured to measure the temperature inside the substrate processing apparatus, a humidity sensor configured to measure the relative humidity inside the substrate processing apparatus, a differential pressure sensor configured to measure the pressure difference inside and outside the substrate processing apparatus, and an anemometer sensor configured to measure the wind speed inside the substrate processing apparatus.

14. The apparatus according to claim 13, wherein at least one sensor is located inside or outside the processing chamber of the substrate processing apparatus.

15. The apparatus according to claim 14, wherein the at least one sensor is located outside the processing chamber of the substrate processing apparatus and in the transport path of the substrate or in the container for housing the substrate.

16. The apparatus according to claim 14 or 15, wherein the at least one sensor is located in the processing chamber of the substrate processing apparatus and above a substrate holding portion provided in the processing chamber.

17. Based on a line width model representing the relationship between the state of the substrate processing apparatus and the line width of the pattern formed on the surface of the substrate by the substrate processing apparatus, and prior data indicating the state of the substrate processing apparatus before processing the substrate by the substrate processing apparatus, the predicted line width when the substrate is processed by the substrate processing apparatus is calculated. Before the substrate is processed by the substrate processing apparatus, instruction information regarding the processing of the substrate is output based on the predicted line width. An information processing method that includes outputting instruction information on whether or not to continue processing the substrate based on a comparison between a predetermined range of design values ​​and the predicted line width.

18. The method according to claim 17, further comprising calculating the processing conditions for the substrate by the substrate processing apparatus based on the predicted line width when the determination unit determines that the predicted line width is within the range of the predetermined design value.

19. The method according to claim 18, further comprising the control unit controlling the substrate processing apparatus based on the calculated processing conditions.

20. The method according to any one of claims 17 to 19, further comprising displaying instruction information on a display whether or not to continue processing the substrate before the substrate is processed by the substrate processing apparatus.

21. Based on the predicted line width, the system outputs instruction information indicating whether or not to continue processing the substrate. The method according to claim 19, further comprising outputting instruction information to the control unit whether or not to continue processing the substrate before the substrate processing apparatus processes the substrate.

22. The method according to any one of claims 17 to 21, further comprising updating the line width model based on post-processing data indicating the state of the substrate processing apparatus when the substrate is processed and measured line width values ​​of the pattern formed on the surface of the substrate by the substrate processing apparatus.

23. The method according to claim 22, wherein updating the line width model includes updating the line width model based on the processing conditions of the substrate by the substrate processing apparatus, the post-processing data, and the measured line width.

24. The method according to claim 22, wherein updating the line width model includes updating the line width model based on the post-processing data, the measured line width, and the measured thickness of the coating film formed on the surface of the substrate by processing the substrate with the substrate processing apparatus.

25. The method according to any one of claims 17 to 24, wherein calculating the predicted line width includes calculating the predicted line width based on the line width model, the prior data, and the measured thickness of the coating film formed on the surface of the substrate by processing the substrate with the substrate processing apparatus.

26. The method according to any one of claims 17 to 24, wherein calculating the predicted line width includes calculating the predicted line width based on the line width model, the prior data, and a film thickness model representing the relationship between the state of the substrate processing apparatus and the film thickness of the coating film formed on the surface of the substrate by the substrate processing apparatus.

27. The method according to any one of claims 17 to 26, wherein the line width model is a multiple regression equation composed of a plurality of partial regression coefficients and a plurality of explanatory variables.

28. The method according to claim 27, wherein the plurality of partial regression coefficients include at least one value selected from a group consisting of a value corresponding to the viscosity of the coating liquid applied to the substrate, a value corresponding to the temperature inside the substrate processing apparatus, a value corresponding to the relative humidity inside the substrate processing apparatus, a value corresponding to the pressure difference inside and outside the substrate processing apparatus, a value corresponding to the wind speed inside the substrate processing apparatus, a value corresponding to the structure of the substrate processing apparatus, and a value corresponding to the type of organic solvent used for processing the substrate.

29. The method according to any one of claims 17 to 28, wherein the prior data includes a value obtained by at least one sensor selected from the group consisting of a viscosity sensor configured to measure the viscosity of a coating liquid to be applied to the substrate, a temperature sensor configured to measure the temperature inside the substrate processing apparatus, a humidity sensor configured to measure the relative humidity inside the substrate processing apparatus, a differential pressure sensor configured to measure the pressure difference inside and outside the substrate processing apparatus, and an anemometer sensor configured to measure the wind speed inside the substrate processing apparatus.

30. The method according to claim 29, wherein at least one sensor is located inside or outside the processing chamber of the substrate processing apparatus.

31. The method according to claim 30, wherein the at least one sensor is located outside the processing chamber of the substrate processing apparatus and in the transport path of the substrate or in the container for housing the substrate.

32. The method according to claim 30 or 31, wherein the at least one sensor is located in the processing chamber of the substrate processing apparatus and above a substrate holding portion provided in the processing chamber.

33. A computer-readable recording medium having a program stored on it that causes an information processing device to execute the information processing method described in any one of claims 17 to 32.

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