Manufacturing method of a mounting platform

Abstract

To improve the in-plane uniformity of the thermal resistance of a mounting table.SOLUTION: A manufacturing method of a mounting table includes steps of: adhering a suction portion and a base with an adhesive; specifying the in-plane distribution of the thermal resistance of an adhesive layer that adheres the suction portion and the base; determining a processing condition of the surface of the suction portion so as to reduce the variation in the thermal resistance in the plane on which the substrate of the mounting table is placed on the basis of the in-plane distribution of the heat resistance of the specified adhesive layer; and processing the surface of the suction portion on the basis of the determined processing condition.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] The present disclosure relates to a method for manufacturing a mounting table, a mounting table, and a substrate processing apparatus.

Background Art

[0002] Patent Document 1 discloses a mounting table configured to adhere an electrostatic adsorption layer onto an electrode block having a flow path for a heat exchange medium.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique for improving the in-plane uniformity of the thermal resistance of a mounting table.

Means for Solving the Problems

[0005] A method for manufacturing a mounting table according to an aspect of the present disclosure is a method for manufacturing a mounting table in which a flat adsorption portion for electrostatically adsorbing a substrate and a flat base are adhered. The method for manufacturing a mounting table includes a step of adhering the adsorption portion and the base with an adhesive, a step of specifying the in-plane distribution of the thermal resistance of the adhesive layer that adheres the adsorption portion and the base, a step of determining the processing conditions of the surface of the adsorption portion so that the variation in the thermal resistance in the plane on which the substrate of the mounting table is placed is reduced based on the specified in-plane distribution of the thermal resistance of the adhesive layer, and a step of processing the surface of the adsorption portion based on the determined processing conditions.

Effects of the Invention

[0006] According to the present disclosure, the in-plane uniformity of the thermal resistance of the mounting table can be improved.

Brief Description of the Drawings

[0007] [Figure 1] Figure 1 is a schematic cross-sectional view showing an example of a substrate processing apparatus according to the embodiment. [Figure 2] Figure 2 is a schematic cross-sectional view showing an example of the configuration of a mounting platform according to the embodiment. [Figure 3] Figure 3 is a flowchart showing an example of the manufacturing process for the mounting platform according to the embodiment. [Figure 4] Figure 4 shows an example of the in-plane thickness distribution of the electrostatic chuck and base according to the embodiment. [Figure 5] Figure 5 shows an example of the in-plane distribution of the thickness of the mounting platform according to the embodiment. [Figure 6] Figure 6 shows an example of a mounting platform according to the embodiment. [Modes for carrying out the invention]

[0008] Hereinafter, embodiments of the manufacturing method of the mounting table, the mounting table, and the substrate processing apparatus disclosed in this application will be described in detail with reference to the drawings. However, the manufacturing method of the mounting table, the mounting table, and the substrate processing apparatus disclosed in this embodiment are not limited to these.

[0009] Substrate processing equipment is known that performs substrate processing such as film deposition and etching on substrates such as semiconductor wafers (hereinafter referred to as "wafers"). Some substrate processing equipment uses a mounting stage to electrostatically attract the substrate. Such a mounting stage is constructed by bonding a flat plate-shaped adsorption part, such as an electrostatic chuck that electrostatically attracts the substrate, to a flat plate-shaped base.

[0010] Incidentally, in substrate processing equipment, poor in-plane temperature uniformity of the substrate reduces the uniformity of substrate processing within the substrate's surface. For example, in semiconductor manufacturing processes, poor in-plane temperature uniformity of the wafer leads to uneven film deposition and etching characteristics within the wafer, resulting in a decrease in the yield of devices manufactured on the wafer.

[0011] To improve the in-plane temperature uniformity of the substrate, the in-plane thermal resistance of the mounting base must be improved. However, because the thickness of the adhesive layer bonding the suction part and the base cannot be made uniform, the in-plane thermal resistance uniformity of the mounting base is low.

[0012] Therefore, new technologies are expected to improve the in-plane uniformity of the thermal resistance of the mounting platform.

[0013] [Embodiment] [Device configuration] Embodiments will now be described. In the following description, the substrate processing apparatus of this disclosure will be described as a plasma processing apparatus that performs plasma processing. Figure 1 is a schematic cross-sectional view showing an example of a substrate processing apparatus 1 according to the embodiment. The substrate processing apparatus 1 according to the embodiment is a capacitively coupled plasma (CCP) type plasma etching apparatus equipped with, for example, parallel plate electrodes. The substrate processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, an RF (Radio Frequency) power supply unit 30, and an exhaust system 40. The substrate processing apparatus 1 also includes a mounting table 11 and an upper electrode shower head 12. The substrate processing apparatus 1 further includes a control unit 51.

[0014] The plasma processing chamber 10 is constructed of a material such as aluminum and is formed in a substantially cylindrical shape. The inner wall surface of the plasma processing chamber 10 is anodized. The plasma processing chamber 10 is also grounded for safety. The mounting base 11 is positioned in the lower region of the plasma processing space 10s within the plasma processing chamber 10. The upper electrode shower head 12 is positioned above the mounting base 11 and can function as part of the ceiling of the plasma processing chamber 10.

[0015] A substrate W is placed on the upper surface of the mounting table 11. The mounting table 11 is configured to support the substrate W in the plasma processing space 10s. In one embodiment, the mounting table 11 includes a base 111, an electrostatic chuck 112, and an edge ring 113. The base 111 is formed in the shape of a flat plate from a conductive material such as aluminum. The base 111 functions as a lower electrode. The electrostatic chuck 112 is formed in the shape of a flat plate. The electrostatic chuck 112 is placed on the base 111 and is configured to support the substrate W on the upper surface of the electrostatic chuck 112. The edge ring 113 is positioned on the upper surface of the peripheral edge of the base 111 so as to surround the substrate W. In addition, although not shown in the figures, in one embodiment, the mounting table 11 may include a temperature control module configured to adjust at least one of the electrostatic chuck 112 and the substrate W to a target temperature. The temperature control module may include a heater, a flow path, or a combination thereof. Temperature-controlled fluids, such as refrigerants and heat transfer gases, flow through the fluid channels.

[0016] The mounting base 11 is supported by a support member 114 provided on the bottom surface of the plasma processing chamber 10. The support member 114 is made of an insulating material. The plasma processing chamber 10 and the mounting base 11 are insulated from each other by the support member 114.

[0017] The upper electrode showerhead 12 is supported on the upper part of the plasma processing chamber 10 via an insulating shielding member (not shown). The upper electrode showerhead 12 has an electrode plate 14 and an electrode support 15. The lower surface of the electrode plate 14 faces the plasma processing space 10s. Multiple gas outlets 14a are formed on the electrode plate 14. The electrode plate 14 is made of a material including, for example, silicon.

[0018] The electrode support 15 is made of a conductive material such as aluminum, for example. The electrode support 15 detachably supports the electrode plate 14 from above. The electrode support 15 is grounded for safety. The electrode support 15 may have a water cooling structure (not shown). A diffusion chamber 15a is formed inside the electrode support 15. From the diffusion chamber 15a, a plurality of gas flow ports 15b communicating with the gas discharge port 14a of the electrode plate 14 extend downward (toward the mounting table 11). The electrode support 15 is provided with a gas inlet 15c for guiding the processing gas into the diffusion chamber 15a, and a gas supply unit 20 is connected to the gas inlet 15c via a pipe.

[0019] The upper electrode shower head 12 is configured to supply one or more processing gases from the gas supply unit 20 to the plasma processing space 10s. In one embodiment, the upper electrode shower head 12 is configured to supply one or more processing gases from the gas inlet 15c to the plasma processing space 10s via the gas diffusion chamber 12b, the gas outlet 12c, and the gas discharge port 14a.

[0020] The gas supply unit 20 may include one or more gas sources 21 and one or more flow controllers 22. In one embodiment, the gas supply unit 20 is configured to supply one or more processing gases from the corresponding gas sources 21 to the gas inlet 15c via the corresponding flow controllers 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Further, the gas supply unit 20 may include one or more flow modulation devices for modulating or pulsing the flow rate of one or more processing gases.

[0021] The RF power supply unit 30 is configured to supply RF power, for example, one or more RF signals, to one or more electrodes, such as the base 111, the upper electrode showerhead 12, or both the base 111 and the upper electrode showerhead 12. This generates plasma from one or more processing gases supplied to the plasma processing space 10s. Thus, the RF power supply unit 30 can function as at least part of a plasma generation unit configured to generate plasma from one or more processing gases in the plasma processing chamber 10. In one embodiment, the RF power supply unit 30 includes two RF generation units 31a, 31b and two matching circuits 32a, 32b. In one embodiment, the RF power supply unit 30 is configured to supply a first RF signal from the first RF generation unit 31a to the base 111 via the first matching circuit 32a. For example, the first RF signal may have a frequency in the range of 27 MHz to 100 MHz.

[0022] In one embodiment, the RF power supply unit 30 is configured to supply a second RF signal from the second RF generation unit 31b to the base 111 via the second matching circuit 32b. For example, the second RF signal may have a frequency in the range of 400 kHz to 13.56 MHz. Alternatively, a DC (Direct Current) pulse generation unit may be used instead of the second RF generation unit 31b.

[0023] Furthermore, although not shown in the figures, other embodiments are possible in this disclosure. For example, the RF power supply unit 30 may be configured to supply a first RF signal from the RF generation unit to the base 111, a second RF signal from another RF generation unit to the base 111, and a third RF signal from yet another RF generation unit to the base 111. In addition, in other alternative embodiments, a DC voltage may be applied to the upper electrode shower head 12.

[0024] Furthermore, in various embodiments, the amplitude of one or more RF signals (i.e., a first RF signal, a second RF signal, etc.) may be pulsed or modulated. Amplitude modulation may include pulsing the RF signal amplitude between an ON state and an OFF state, or between two or more different ON states.

[0025] The exhaust system 40 may be connected to, for example, an exhaust port 10e located at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure valve and a vacuum pump. The vacuum pump may include a turbomolecular pump, a roughing pump, or a combination thereof.

[0026] An opening 10a is provided in the side wall of the plasma processing chamber 10 for loading or unloading the substrate W. The opening 10a can be opened and closed by a gate valve 10b.

[0027] The control unit 51 processes computer-executable instructions that cause the substrate processing apparatus 1 to perform the various processes described herein. The control unit 51 may be configured to control each element of the substrate processing apparatus 1 to perform the various processes described herein. The control unit 51 may include, for example, a computer. The computer may include, for example, a processing unit (CPU: Central Processing Unit) 511, a storage unit 512, and a communication interface 513. The processing unit 511 may be configured to perform various control operations based on a program stored in the storage unit 512. The storage unit 512 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 513 may communicate with other devices, such as other substrate processing apparatus 1, via a communication line such as a LAN (Local Area Network).

[0028] Next, the configuration of the mounting base 11 according to the embodiment will be described. Figure 2 is a schematic cross-sectional view showing an example of the configuration of the mounting base 11 according to the embodiment.

[0029] The mounting base 11 is comprised of a base 111 and an electrostatic chuck 112.

[0030] The electrostatic chuck 112 is formed in the shape of a flat disc on its upper surface. A mounting surface 11a on which the substrate W is placed is formed on the upper surface of the electrostatic chuck 112. The electrostatic chuck 112 has the function of electrostatically adsorbing the substrate W. For example, the electrostatic chuck 112 is constructed by interposing an electrode 112b between dielectrics 112a such as ceramic. A DC power supply (not shown) is connected to the electrode 112b via wiring (not shown). The electrostatic chuck 112 electrostatically adsorbs the substrate W by the Coulomb force generated when a DC voltage is applied to the electrode 112b from the DC power supply.

[0031] The base 111 is formed in a flat plate shape from a conductive material. A flow channel 111a is formed inside the base 111. A chiller unit is connected to the flow channel 111a via piping (not shown). The base 111 is configured to be controllable to a predetermined temperature by circulating a refrigerant, such as cooling water or an organic solvent such as Garden, through the flow channel 111a using the chiller unit.

[0032] The mounting base 11 is constructed by bonding a base 111 and an electrostatic chuck 112 together with adhesive. Figure 2 shows the adhesive layer 115 that bonds the base 111 and the electrostatic chuck 112 together.

[0033] Incidentally, as mentioned above, if the in-plane temperature uniformity of the substrate W is poor, the uniformity of substrate processing within the substrate W decreases. For example, in plasma etching, if the in-plane temperature uniformity of the substrate W is low, the etching characteristics within the substrate W become non-uniform, which reduces the yield of devices manufactured on the substrate W.

[0034] In plasma-based processes, the substrate W is generally attached to a mounting stage 11, and the plasma treatment is performed while the heat from the plasma to the substrate W is transferred to the mounting stage 11 and dissipated. Therefore, in order to achieve high temperature uniformity of the substrate W, the uniformity of the thermal resistance within the plane of the mounting stage 11 must be high. In order to achieve high in-plane uniformity of the thermal resistance of the mounting stage 11, the uniformity of the thickness of the adhesive layer 115 must be high. However, it is difficult to bond the electrostatic chuck 112 and the base 111 so that the thickness of the adhesive layer 115 is uniform. The mounting stage 11 has low in-plane uniformity of the thickness of the adhesive layer 115. Therefore, the yield of devices in the substrate processing apparatus 1 is unstable. In addition, because there is a large individual difference in the thickness of the adhesive layer 115, the etching characteristics differ for each substrate processing apparatus.

[0035] [Manufacturing flow of the mounting platform 11] Therefore, in this embodiment, the mounting base 11 is manufactured by the method described below. Figure 3 is a flowchart showing an example of the manufacturing process of the mounting base 11 according to this embodiment. Figure 3 illustrates the procedure for manufacturing the mounting base 11. In this embodiment, the mounting base 11 is manufactured according to the procedure shown in the flowchart of Figure 3. Below, an example of the manufacturing method of the mounting base 11 will be described with reference to Figures 4 to 6.

[0036] First, the in-plane thickness distribution of the electrostatic chuck 112 and the base 111 is measured (step S10). For example, three-dimensional measurements are performed on the electrostatic chuck 112 and the base 111 to measure the in-plane thickness distribution of the electrostatic chuck 112 and the base 111. Figure 4 shows an example of the in-plane thickness distribution of the electrostatic chuck 112 and the base 111 according to the embodiment. In Figure 4, as an example of the in-plane thickness distribution of the electrostatic chuck 112, the thickness d11 to d13 at positions P11 to P13 in the region corresponding to the mounting surface 11a is shown. Also in Figure 4, as an example of the in-plane distribution of the base 111, the thickness d21 to d23 at positions P21 to P23 in the region corresponding to the mounting surface 11a is shown.

[0037] Next, the electrostatic chuck 112 and the base 111 are bonded together with adhesive (step S11).

[0038] Next, the in-plane distribution of the thermal resistance of the adhesive layer 115 that bonds the electrostatic chuck 112 and the base 111 is determined. Specifically, first, the in-plane distribution of the thickness of the mounting table 11 to which the electrostatic chuck 112 and the base 111 are bonded is measured (step S12). For example, a three-dimensional measurement of the mounting table 11 is performed to measure the in-plane distribution of the thickness of the mounting table 11. Figure 5 shows an example of the in-plane distribution of the thickness of the mounting table 11 according to the embodiment. In Figure 5, the thickness of the mounting table 11 is shown as the thickness d31 to d33 at positions P31 to P33 in the region corresponding to the mounting surface 11a. Then, based on the measured in-plane distribution of the thickness of the mounting table 11 and the in-plane distribution of the thickness of the electrostatic chuck 112 and the base 111, the in-plane distribution of the thickness of the adhesive layer 115 is determined (step S13). The thickness of the mounting table 11 is the sum of the thickness of the electrostatic chuck 112, the thickness of the base 111, and the thickness of the adhesive layer 115. Therefore, the in-plane distribution of the thickness of the adhesive layer 115 is determined by subtracting the thickness of the electrostatic chuck 112 and the base 111 from the measured thickness of the mounting table 11 at each corresponding position. Figure 5 shows an example of the in-plane distribution of the thickness of the adhesive layer 115 according to the embodiment. For example, positions P31 to P33 of the mounting table 11 overlap with positions P11 to P13 of the electrostatic chuck 112 and positions P21 to P23 of the base 111, with positions P11 to P13 and positions P21 to P23 of the base 111 corresponding to each other. Note that in Figures 5 and 6, positions P11 to P13 and P21 to P23 are slightly shifted from positions P31 to P33 for easier identification. In this case, the thickness d41 to d43 of the adhesive layer 115 at positions P31 to P33 is determined by calculating it as shown in the following equations (1) to (3).

[0039] d41 = d31-d21-d11 (1) d42 = d32 - d22 - d12 (2) d41 = d31-d21-d11 (3)

[0040] Furthermore, if the machining accuracy of the electrostatic chuck 112 and base 111 is high and the thickness of the electrostatic chuck 112 and base 111 can be considered to be the design value thickness, then it is not necessary to measure the thickness of the electrostatic chuck 112 and base 111. The thickness of the adhesive layer 115 may also be determined by subtracting the design value thickness of the electrostatic chuck 112 and base 111 from the measured thickness of the mounting table 11.

[0041] Based on the identified in-plane distribution of the thickness of the adhesive layer 115 and thermal resistance data showing the relationship between the thickness of the adhesive layer 115 and its thermal resistance, the in-plane distribution of the thermal resistance of the adhesive layer 115 is identified (step S14). For example, adhesive layers 115 are formed in advance at various thicknesses, and the thermal resistance of the adhesive layer 115 is measured at each thickness to generate thermal resistance data showing the relationship between the thickness of the adhesive layer 115 and its thermal resistance, which is then stored in an information processing device such as a computer. The information processing device identifies the in-plane distribution of the thermal resistance of the adhesive layer 115 by using the thermal resistance data to determine the thermal resistance corresponding to the thickness of the adhesive layer 115.

[0042] Based on the in-plane distribution of thermal resistance of the identified adhesive layer 115, the surface processing conditions of the electrostatic chuck 112 are determined so as to reduce the variation in thermal resistance within the mounting surface 11a of the mounting table 11 (step S15). The substrate W is placed on the electrostatic chuck 112. The electrostatic chuck 112 can change the thermal resistance between the substrate W and the electrostatic chuck 112 by changing the surface shape and thereby changing the contact area with the substrate W. For example, when forming pillars called dots on the surface of the electrostatic chuck 112, the thermal resistance can be adjusted by adjusting the dot diameter and dot height. For example, the dot formation process consists of mask fabrication, resist coating, exposure, development, blasting, and surface brushing. The dot diameter and dot height can be changed by changing the processing conditions, for example, as follows. (1) Use a mask with different dot diameters for each region. (2) Vary the exposure time for each region. (3) Vary the blast time for each area. (4) The surface brushing conditions (processing time, rotation speed, brush pressure) are changed for each area.

[0043] For example, electrostatic chucks 112 with various surface shapes are formed in advance, the thermal resistance of each electrostatic chuck 112 is measured, and shape data showing the relationship between surface shape and thermal resistance is generated and stored in an information processing device such as a computer. The information processing device uses the shape data to determine the surface processing conditions of the electrostatic chuck 112 so as to reduce the variation in thermal resistance within the mounting surface 11a of the mounting table 11 regarding the in-plane distribution of thermal resistance of the adhesive layer 115. For example, the processing conditions are determined so that the dot size is large or the dot density is high in areas where the thermal resistance of the adhesive layer 115 is high, and the dot size is small or the dot density is low in areas where the thermal resistance of the adhesive layer 115 is low.

[0044] Here, the thermal resistance of the mounting table 11 is the sum of the thermal resistance of the electrostatic chuck 112, the thermal resistance of the base 111, and the thermal resistance of the adhesive layer 115. When the thickness of the electrostatic chuck 112 and the base 111 are approximately constant in the region corresponding to the mounting surface 11a, the variation in thermal resistance within the mounting surface 11a of the mounting table 11 is mainly due to the variation in thermal resistance within the plane of the adhesive layer 115. When the thickness of the electrostatic chuck 112 and the base 111 are approximately constant in the region corresponding to the mounting surface 11a, the surface processing conditions of the electrostatic chuck 112 are determined to reduce the variation in thermal resistance within the plane of the adhesive layer 115. On the other hand, if there is variation in the thickness of the electrostatic chuck 112 and the base 111 in the region corresponding to the mounting surface 11a, the variation in thermal resistance within the mounting surface 11a of the mounting table 11 is due to the combined effect of variations in the in-plane thermal resistance of the electrostatic chuck 112, the base 111, and the adhesive layer 115. In this case, the thermal resistance of the electrostatic chuck 112 and the base 111 is determined from their respective thicknesses. Then, in the region corresponding to the mounting surface 11a, the in-plane distribution of thermal resistance of the mounting table 11 is determined by adding the thermal resistance of the electrostatic chuck 112, the thermal resistance of the base 111, and the thermal resistance of the adhesive layer 115 for each position. Finally, the surface processing conditions of the electrostatic chuck 112 are determined to reduce the variation in thermal resistance within the plane of the mounting table 11.

[0045] Furthermore, even if the variation in thermal resistance within the plane of the mounting table 11 is small, if there is a large individual difference in thermal resistance for each mounting table 11 manufactured, the substrate processing apparatus 1 will exhibit different etching characteristics for each individual. Therefore, the surface processing conditions of the electrostatic chuck 112 may be determined so that the thermal resistance within the plane of the mounting table 11 is within a predetermined allowable range. For example, a reference value for the thermal resistance due to the adhesive layer 115 and the electrostatic chuck 112 is determined in advance by design, etc., and the allowable range of thermal resistance is determined based on the reference value according to the plasma processing performed by the substrate processing apparatus 1. Then, using shape data, the surface processing conditions of the electrostatic chuck 112 are determined so that the thermal resistance obtained by adding the thermal resistance of the adhesive layer 115 and the thermal resistance of the surface of the electrostatic chuck 112 is within an allowable range, based on the in-plane distribution of the thermal resistance of the adhesive layer 115.

[0046] Based on the determined processing conditions, the surface of the electrostatic chuck 112 is processed (step S16). For example, according to the determined processing conditions, a mask is made, resist is applied, exposure is performed, development is carried out, blasting and surface brushing are performed to form dots. Figure 6 is a diagram showing an example of a mounting table 11 according to the embodiment. In Figure 6, dot irregularities are formed on the surface of the electrostatic chuck 112 as a result of processing. A mounting table 11 manufactured in this way can reduce individual differences in the thermal resistance of the mounting table 11 even when there are large individual differences in the thickness of the adhesive layer 115. By arranging a mounting table 11 manufactured in this way in the substrate processing apparatus 1, it is possible to suppress the fact that the etching characteristics will differ from one apparatus to another.

[0047] As described above, the method for manufacturing the mounting table 11 according to the embodiment includes the steps of: bonding the electrostatic chuck 112 (adsorption part) and the base 111 with an adhesive (step S11); identifying the in-plane distribution of thermal resistance of the adhesive layer 115 bonding the electrostatic chuck 112 and the base 111 (steps S12 to S14); determining the surface processing conditions of the electrostatic chuck 112 based on the identified in-plane distribution of thermal resistance of the adhesive layer 115 so as to reduce variations in thermal resistance within the surface (mounting surface 11a) on which the substrate W of the mounting table 11 is placed (step S15); and processing the surface of the electrostatic chuck 112 based on the determined processing conditions (step S16). As a result, the method for manufacturing the mounting table 11 according to the embodiment can improve the in-plane uniformity of the thermal resistance of the mounting table 11.

[0048] Furthermore, the manufacturing method of the mounting table 11 according to the embodiment further includes a step (step S10) of measuring the in-plane thickness distribution of the electrostatic chuck 112 and the base 111 before the bonding step (step S11). The step of identifying the in-plane distribution of thermal resistance includes a step (step S12) of measuring the in-plane thickness distribution of the mounting table 11 to which the electrostatic chuck 112 and the base 111 are bonded; a step (step S13) of identifying the in-plane thickness distribution of the adhesive layer 115 based on the measured in-plane thickness distribution of the mounting table 11 and the in-plane thickness distribution of the electrostatic chuck 112 and the base 111; and a step (step S14) of identifying the in-plane distribution of the thermal resistance of the adhesive layer 115 based on the identified in-plane thickness distribution of the adhesive layer 115 and thermal resistance data 203a showing the relationship between the thickness of the adhesive layer 115 and thermal resistance. Thus, the manufacturing method of the mounting table 11 according to the embodiment can identify the in-plane distribution of the thermal resistance of the adhesive layer 115.

[0049] Furthermore, the step of identifying the in-plane distribution of the thickness of the adhesive layer 115 (step S13) involves subtracting the thickness of the electrostatic chuck 112 and the base 111 from the measured thickness of the mounting table 11 for each corresponding position, thereby identifying the in-plane distribution of the thickness of the adhesive layer 115. As a result, the manufacturing method of the mounting table 11 according to this embodiment can identify the in-plane distribution of the thickness of the adhesive layer 115 that bonds the electrostatic chuck 112 and the base 111.

[0050] Furthermore, in the determination step (step S15), the processing conditions are determined such that the size of the dots formed on the surface of the electrostatic chuck 112 is large or the density of the dots is high in areas where the thermal resistance of the adhesive layer 115 is high, and the size of the dots is small or the density of the dots is low in areas where the thermal resistance of the adhesive layer 115 is low. As a result, the manufacturing method of the mounting table 11 according to the embodiment can improve the in-plane uniformity of the thermal resistance of the mounting table 11.

[0051] Furthermore, the determination step (step S15) determines the surface processing conditions of the electrostatic chuck 112 so that the thermal resistance within the plane of the mounting table 11 is all within a predetermined allowable range. As a result, the manufacturing method of the mounting table 11 according to the embodiment can reduce individual differences in thermal resistance for each mounting table 11 manufactured.

[0052] Furthermore, the mounting table 11 according to the embodiment comprises an electrostatic chuck 112 (adsorption part), a base 111, and an adhesive layer 115. The electrostatic chuck 112 is flat and electrostatically adsorbs the substrate W. The base 111 is flat. The adhesive layer 115 adheres the electrostatic chuck 112 and the base 111. The adhesive layer 115 has multiple regions with different thermal resistances. The electrostatic chuck 112 has different surface shapes corresponding to the multiple regions. As a result, the mounting table 11 according to the embodiment improves the in-plane uniformity of thermal resistance.

[0053] Furthermore, in the electrostatic chuck 112, the size of the dots formed on the surface of the electrostatic chuck 112 is larger or the dot density is higher in areas with high thermal resistance, while the size of the dots is smaller or the dot density is lower in areas with low thermal resistance. As a result, the mounting table 11 according to this embodiment improves the in-plane uniformity of thermal resistance.

[0054] Furthermore, the substrate processing apparatus 1 according to the embodiment has a mounting table 11 manufactured by the method for manufacturing the mounting table 11 according to the embodiment. As a result, the substrate processing apparatus 1 according to the embodiment can suppress non-uniform etching characteristics within the plane of the substrate W. As a result, the substrate processing apparatus 1 can improve the yield of devices manufactured on the substrate W.

[0055] While embodiments have been described above, it should be understood that the embodiments disclosed herein are illustrative and not restrictive in all respects. Indeed, the embodiments described above can be embodied in a variety of forms. Furthermore, the embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the claims.

[0056] For example, the technology of this disclosure can be employed in any plasma processing apparatus. For instance, the substrate processing apparatus 1 may be any type of plasma processing apparatus, such as an inductively-coupled plasma (ICP) type or a plasma processing apparatus that excites a gas with surface waves such as microwaves.

[0057] Furthermore, although the above-described embodiment uses a plasma etching apparatus as an example of the substrate processing apparatus 1, the disclosed technology is not limited to this. The substrate processing apparatus 1 may also be a film deposition apparatus using plasma, a modification apparatus, or the like.

[0058] Furthermore, although the above-described embodiment uses a semiconductor wafer as an example, it is not limited to this. The substrate may be other substrates, such as a glass substrate.

[0059] It should be noted that the embodiments disclosed herein are illustrative and not restrictive in all respects. Indeed, the embodiments described above can be embodied in a variety of forms. Furthermore, the embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0060] W board 1. Substrate processing device 10 Plasma Processing Chamber 11. Mounting platform 111 Base 112 Electrostatic Chuck 115 Adhesive layer

Claims

1. A method for manufacturing a mounting platform, a) A step of preparing an adhesive body including an adsorption part for electrostatically adsorbing a substrate, a base, and an adhesive layer for bonding the adsorption part and the base, b) A step of determining the in-plane distribution of the thermal resistance of the adhesive layer, c) A step of determining the surface processing conditions of the adsorption portion based on the in-plane distribution of the thermal resistance of the identified adhesive layer, such that the variation in thermal resistance in the plane on which the substrate is placed on the stand described above is reduced, d) A step of processing the surface of the adsorption part based on the determined processing conditions, A method for manufacturing a mounting platform having the following characteristics.

2. A method for manufacturing a mounting platform, a) A step of preparing an adhesive body including an adsorption part for electrostatically adsorbing a substrate, a base, and an adhesive layer for bonding the adsorption part and the base, b) A step of determining the surface processing conditions of the adsorption portion based on the in-plane distribution of the thermal resistance of the adhesive layer, such that the variation in thermal resistance in the plane on which the substrate is placed on the stand described above is reduced, A method for manufacturing a mounting platform having the following characteristics.

3. A method for manufacturing a mounting platform, a) A step of preparing an adhesive body including an adsorption part for electrostatically adsorbing a substrate, a base, and an adhesive layer for bonding the adsorption part and the base, b) A step of determining the in-plane distribution of the thermal resistance of the adhesive layer, c) A step of determining the surface processing conditions of the adsorption portion based on the in-plane distribution of the thermal resistance of the identified adhesive layer, such that the variation in thermal resistance in the plane on which the substrate is placed on the stand described above is reduced, A method for manufacturing a mounting platform having the following characteristics.

4. The process further includes measuring the in-plane distribution of the thickness of the adsorption portion and the base before step a), The aforementioned step b) is, b-1) A step of measuring the in-plane distribution of the thickness of the aforementioned stand, which is formed by bonding the suction part and the base, b-2) A step of determining the in-plane distribution of the thickness of the adhesive layer based on the measured in-plane distribution of the thickness of the base described above and the in-plane distribution of the thickness of the adsorption part and the base, b-3) A step of determining the in-plane distribution of the thermal resistance of the adhesive layer based on the identified in-plane distribution of the thickness of the adhesive layer and thermal resistance data showing the relationship between the thickness of the adhesive layer and thermal resistance, A method for manufacturing a mounting platform according to claim 1 or 3.

5. Step b-2) involves determining the in-plane distribution of the adhesive layer thickness by subtracting the thickness of the suction part and the base from the measured thickness of the mounting stand described above for each corresponding position. A method for manufacturing a mounting platform according to claim 4.

6. In step c), the processing conditions are determined such that the size of the dots formed on the surface of the adsorption portion is large or the density of the dots is high in areas where the thermal resistance of the adhesive layer is high, and the size of the dots is small or the density of the dots is low in areas where the thermal resistance of the adhesive layer is low. A method for manufacturing a mounting platform according to any one of claims 1, 3, 4, or 5.

7. Step c) involves determining the surface processing conditions for the adsorption portion such that the thermal resistance within the plane of the aforementioned mounting base is all within a predetermined allowable range. A method for manufacturing a mounting platform according to any one of claims 1, 3, 4, 5, or 6.

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