Template and semiconductor device manufacturing method

Abstract

To provide a template with a more appropriate pattern and a method for manufacturing a semiconductor device.SOLUTION: A temperate according to an embodiment comprises a substrate, a light transmission film, and a plurality of salients. The substrate includes a first surface. The light transmission film is provided on the first surface, includes a second surface on the opposite side of the substrate, and has a different composition than the substrate. The plurality of salients are provided on the second surface and have different heights.SELECTED DRAWING: Figure 6

Description

Technical Field

[0001] This embodiment relates to a template and a method for manufacturing a semiconductor device.

Background Art

[0002] There is known a technique for manufacturing a semiconductor device by applying a template having a concavo-convex pattern region to a resist coated on a film to be processed using a nanoimprint method capable of forming a fine pattern, pressing the template against the resist, and processing the film to be processed using the resist on which the pattern is formed as a mask.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] To provide a template having a more appropriate pattern and a method for manufacturing a semiconductor device.

Means for Solving the Problems

[0005] The template according to this embodiment includes a substrate, a light-transmissive film, and a plurality of convex portions. The substrate has a first surface. The light-transmissive film is provided on the first surface, has a second surface on the side opposite to the substrate, and has a composition different from that of the substrate. The plurality of convex portions are provided on the second surface and have different heights.

Brief Description of the Drawings

[0006] [Figure 1] It is a cross-sectional view showing the structure of a semiconductor device according to the first embodiment. [Figure 2] It is a cross-sectional view showing an example of a method for manufacturing a semiconductor device according to the first embodiment. [Figure 3]Figure 2 is a cross-sectional view showing an example of a semiconductor device manufacturing method. [Figure 4] Figure 3 is a cross-sectional view showing an example of a semiconductor device manufacturing method. [Figure 5] This is a cross-sectional view showing an example of a semiconductor device manufacturing method, following Figure 4. [Figure 6] This is a cross-sectional view showing an example of the template configuration according to the first embodiment. [Figure 7A] This is a cross-sectional view showing an example of a method for manufacturing a template according to the first embodiment. [Figure 7B] This is a cross-sectional view showing an example of a template formation method, following Figure 7A. [Figure 7C] Figure 7B is a cross-sectional view showing an example of a template formation method. [Figure 7D] Figure 7C is a cross-sectional view showing an example of a template formation method. [Figure 7E] Figure 7D is a cross-sectional view showing an example of a template formation method. [Figure 8A] This is a cross-sectional view showing an example of a method for forming a stepped pattern according to the first embodiment. [Figure 8B] This is a cross-sectional view showing an example of a method for forming a stepped pattern, following Figure 8A. [Figure 8C] Figure 8B is a cross-sectional view showing an example of a method for forming a stepped pattern. [Figure 8D] Figure 8C is a cross-sectional view showing an example of a method for forming a stepped pattern. [Figure 8E] Figure 8D is a cross-sectional view showing an example of a method for forming a stepped pattern. [Figure 8F] Figure 8E is a cross-sectional view showing an example of a method for forming a stepped pattern. [Figure 8G] Figure 8F is a cross-sectional view showing an example of a method for forming a stepped pattern. [Figure 9] This is a cross-sectional view showing an example of template configuration using a comparative example. [Figure 10A] This is a cross-sectional view showing an example of a template manufacturing method using a comparative example. [Figure 10B] It is a cross-sectional view showing an example of a method for manufacturing a template following FIG. 10A. [Figure 10C] It is a cross-sectional view showing an example of a method for manufacturing a template following FIG. 10B. [Figure 10D] It is a cross-sectional view showing an example of a method for manufacturing a template following FIG. 10C. [Figure 10E] It is a cross-sectional view showing an example of a method for manufacturing a template following FIG. 10D. [Figure 10F] It is a cross-sectional view showing an example of a method for manufacturing a template following FIG. 10E. [Figure 11A] It is a cross-sectional view showing an example of a method for manufacturing a template according to the first modification of the first embodiment. [Figure 11B] It is a cross-sectional view showing an example of a method for manufacturing a template following FIG. 11A. [Figure 11C] It is a cross-sectional view showing an example of a method for manufacturing a template following FIG. 11B. [Figure 11D] It is a cross-sectional view showing an example of a method for manufacturing a template following FIG. 11C. [Figure 11E] It is a cross-sectional view showing an example of a method for manufacturing a template following FIG. 1xD. [Figure 11F] It is a cross-sectional view showing an example of a method for manufacturing a template following FIG. 11E. [Figure 12A] It is a cross-sectional view showing an example of a method for manufacturing a template according to the second modification of the first embodiment. [Figure 12B] It is a cross-sectional view showing an example of a method for manufacturing a template following FIG. 12A. [Figure 12C] It is a cross-sectional view showing an example of a method for manufacturing a template following FIG. 12B. [Figure 12D] It is a cross-sectional view showing an example of a method for manufacturing a template following FIG. 12C. [Figure 12E] It is a cross-sectional view showing an example of a method for manufacturing a template following FIG. 12D. [Figure 12F] It is a cross-sectional view showing an example of a method for manufacturing a template following FIG. 12E. [Figure 13] This is a cross-sectional view showing an example of the template configuration according to a third modification of the first embodiment. [Figure 14A] This is a cross-sectional view showing an example of a method for manufacturing a template according to a third modification of the first embodiment. [Figure 14B] This is a cross-sectional view showing an example of a template manufacturing method, following Figure 14A. [Figure 14C] Figure 14B is a cross-sectional view showing an example of a template manufacturing method. [Figure 14D] Figure 14C is a cross-sectional view showing an example of a template manufacturing method. [Figure 14E] Figure 14D is a cross-sectional view showing an example of a template manufacturing method. [Figure 14F] Figure 14E is a cross-sectional view showing an example of a template manufacturing method. [Figure 15] This is a cross-sectional view showing an example of the template configuration according to the second embodiment. [Figure 16A] This is a cross-sectional view showing an example of a template manufacturing method according to the second embodiment. [Figure 16B] This is a cross-sectional view showing an example of a template manufacturing method, following Figure 16A. [Figure 16C] Figure 16B is a cross-sectional view showing an example of a template manufacturing method. [Figure 16D] Figure 16C is a cross-sectional view showing an example of a template manufacturing method. [Figure 16E] Figure 16D is a cross-sectional view showing an example of a template manufacturing method. [Figure 17A] This is a cross-sectional view showing an example of a method for manufacturing a template according to a modification of the second embodiment. [Figure 17B] This is a cross-sectional view showing an example of a template manufacturing method, following Figure 17A. [Figure 17C] Figure 17B is a cross-sectional view showing an example of a template manufacturing method. [Figure 17D] Figure 17C is a cross-sectional view showing an example of a template manufacturing method. [Figure 18] This is a cross-sectional view showing an example of the template configuration according to the third embodiment. [Figure 19A] This is a cross-sectional view showing an example of a template manufacturing method according to the third embodiment. [Figure 19B] This is a cross-sectional view showing an example of a template manufacturing method, following Figure 19A. [Figure 19C] Figure 19B is a cross-sectional view showing an example of a template manufacturing method. [Figure 19D] Figure 19C is a cross-sectional view showing an example of a template manufacturing method. [Figure 19E] Figure 19D is a cross-sectional view showing an example of a template manufacturing method. [Modes for carrying out the invention]

[0007] Embodiments of the present invention will be described below with reference to the drawings. These embodiments are not limiting to the present invention. The drawings are schematic or conceptual, and the proportions of each part may not necessarily be the same as those of actual objects. In the specification and drawings, elements similar to those described above with respect to previously shown drawings are denoted by the same reference numerals, and detailed explanations are omitted as appropriate.

[0008] (First Embodiment) Figure 1 is a cross-sectional view showing the structure of a semiconductor device according to the first embodiment. The semiconductor device in Figure 1 includes a three-dimensional semiconductor memory.

[0009] The semiconductor device shown in Figure 1 comprises a substrate 1, a first insulating film 2, a source-side conductive layer 3, a second insulating film 4, a plurality of electrode layers 5 which are examples of the first film, a plurality of insulating layers 6 which are examples of the second film, a drain-side conductive layer 7, a first interlayer insulating film 8, a second interlayer insulating film 9, a plurality of contact plugs 11, a first memory insulating film 12, a charge storage layer 13, a second memory insulating film 14, and a channel semiconductor layer 15.

[0010] Substrate 1 is a semiconductor substrate, such as a silicon substrate. Figure 1 shows the X and Y directions, which are parallel to and perpendicular to the upper surface of substrate 1, and the Z direction, which is perpendicular to the upper surface of substrate 1. In this specification, the +Z direction is treated as the upward direction, i.e., the height direction, and the -Z direction is treated as the downward direction. The -Z direction may or may not coincide with the direction of gravity. In the following description, "height" may also be referred to as "thickness".

[0011] The first insulating film 2 is formed on a diffusion layer L formed within the substrate 1. The source-side conductive layer 3 is formed on the first insulating film 2. The second insulating film 4 is formed on the source-side conductive layer 3.

[0012] Multiple electrode layers 5 and multiple insulating layers 6 are alternately stacked on a second insulating film 4. The electrode layers 5 are metal layers containing, for example, tungsten (W) or molybdenum (Mo), and function as word lines or selector lines. The insulating layers 6 are, for example, silicon oxide films.

[0013] The drain-side conductive layer 7 and the first interlayer insulating film 8 are formed on a laminate including the electrode layer 5 and the insulating layer 6. The second interlayer insulating film 9 is formed on the drain-side conductive layer 7 and the first interlayer insulating film 8.

[0014] Multiple contact plugs 11 are formed within contact holes that penetrate some of the electrode layers 5 and insulating layer 6, the first interlayer insulating film 8, and the second interlayer insulating film 9. These contact plugs 11 are electrically connected to different electrode layers 5. Each contact plug 11 is formed of, for example, a barrier metal layer such as a titanium-containing layer and a plug material layer such as a tungsten layer.

[0015] In this embodiment, an insulating film (not shown) is formed between the side surface of the contact plug 11 and the side surface of the electrode layer 5 to avoid contact between the side surface of the contact plug 11 and the side surface of the electrode layer 5. On the other hand, the lower surface of each contact plug 11 is in contact with the upper surface of the corresponding electrode layer 5.

[0016] The first memory insulating film 12, the charge storage layer 13, and the second memory insulating film 14 are formed sequentially on the side surface of the memory hole M that penetrates the first insulating film 2, the source-side conductive layer 3, the second insulating film 4, the electrode layer 5, the insulating layer 6, the drain-side conductive layer 7, and the second interlayer insulating film 9. The channel semiconductor layer 15 is formed within the memory hole M via the first memory insulating film 12, the charge storage layer 13, and the second memory insulating film 14, and is electrically connected to the substrate 1.

[0017] The first memory insulating film 12 is, for example, a silicon oxide film. The charge storage layer 13 is, for example, a silicon nitride film. The second memory insulating film 14 is, for example, a silicon oxide film. The channel semiconductor layer 15 is, for example, a polysilicon layer. Note that the charge storage layer 13 may also be a semiconductor layer such as a polysilicon layer.

[0018] These are formed, for example, by sequentially forming a first memory insulating film 12, a charge storage layer 13, and a second memory insulating film 14 on the side and bottom surfaces of a memory hole M, removing the second memory insulating film 14, the charge storage layer 13, and the first memory insulating film 12 from the bottom surface of the memory hole M, and then embedding a channel semiconductor layer 15 inside the memory hole M. A core insulator (not shown) may be further embedded inside the channel semiconductor layer 15.

[0019] The contact plug 11 shown in Figure 1 is formed, for example, by embedding a conductive material in a recess (contact hole) formed using a nanoimprint method.

[0020] Figures 2 to 5 are cross-sectional views showing an example of a method for manufacturing a semiconductor device according to the first embodiment.

[0021] First, as shown in Figure 2, a laminate 120 is formed on the substrate 1, including a sacrificial layer 150 and an insulating layer 6, which are examples of first films alternately stacked in the height direction (+Z direction) perpendicular to the upper surface of the substrate 1. The sacrificial layer 150 is, for example, a silicon nitride film (SiN). The insulating layer 6 is, for example, a silicon oxide film (SiO2). Note that the substrate 1 is omitted from the illustration in Figure 2. Also, the number of sacrificial layers 150 and insulating layers 6 is not particularly limited. Subsequently, a plurality of recesses (contact holes H1 to H5) of different depths are formed in the laminate 120, and a sacrificial layer 110 is formed inside the contact holes to fill them. The sacrificial layer 110 is, for example, a silicon oxide film or an amorphous silicon film.

[0022] The following describes the details of contact hole H1 to H5 formation. In this embodiment, a template pattern, described later, is transferred to a resin (e.g., a resist material) not shown, formed on a workpiece film including the laminate 120, using a nanoimprint method. Subsequently, the workpiece film is processed using the resin on which the pattern has been transferred as a mask, thereby forming contact holes H1 to H5 in the laminate 120.

[0023] Next, after forming the sacrificial layer 110, a slit (not shown) is formed through the laminate 120. After forming the slit, the sacrificial layer 150 of the laminate 120 is removed by wet etching using a chemical solution introduced through the slit. After removing the sacrificial layer 150, the electrode layer 5 is deposited in the cavity between the insulating layers 6 formed by the removal of the sacrificial layer 150. As a result, the sacrificial layer 150 is replaced by the electrode layer 5, as shown in Figure 3. After replacing the sacrificial layer 150 with the electrode layer 5, the sacrificial layer 110 that had formed inside the contact hole is removed, as shown in Figure 4. After removing the sacrificial layer 110, an insulating layer 16 is formed on the side wall of the contact hole, as shown in Figure 5. After forming the insulating layer 16, a contact plug 11 is formed by embedding a plug material layer inside the insulating layer 16.

[0024] The formation of the contact plug 11 is not limited to the method described above. For example, after forming a plurality of contact holes H1 to H5 with different depths, an insulating layer 16 may be formed on the side walls of the contact holes, as shown in Figure 5, a plug material layer may be embedded inside the insulating layer 16, and then replacement may be performed as shown in Figure 3.

[0025] The following describes a semiconductor device, specifically a template for forming multiple recesses (contact holes H1 to H5) of different depths. Note that template 100 may also be used to form other areas of the semiconductor device.

[0026] In the following, "upward" refers to the upward direction on the paper in Figures 6 to 19E.

[0027] Figure 6 is a cross-sectional view showing an example of the configuration of template 100 according to the first embodiment.

[0028] The template 100 has a surface S100 and a plurality of protrusions 41.

[0029] Surface S100 is the surface on which the uneven pattern is provided. In the nanoimprint method, the uneven pattern is transferred to the resist by pressing the template 100 against the resist coated on the workpiece.

[0030] Multiple protrusions 41 provided on surface S100 form a pillar pattern as an uneven pattern. By transferring the pillar pattern, multiple recesses (contact holes H1 to H5) of different depths can be formed for forming the contact plug 11.

[0031] The template 100 comprises a substrate 20, a transparent conductive film 30, a component 40, and a protective film 50.

[0032] The substrate 20 has a surface (first surface) S20 on the side of surface S100. Surface S20 has a substantially constant height in a direction substantially perpendicular to surface S100. The substrate 20 is, for example, a translucent quartz glass substrate. Therefore, the substrate 20 contains silicon dioxide (SiO2).

[0033] The transparent conductive film (light-transmitting film) 30 is provided on the substrate 20 in a film-like (layer-like) manner. The transparent conductive film 30 has a side (second surface) S30 opposite to the substrate 20. The composition of the transparent conductive film 30 is different from the composition of the substrate 20. That is, "different composition" means that the transparent conductive film 30 and the substrate 20 are formed from different materials. The height of the transparent conductive film 30 is approximately constant in the direction approximately perpendicular to the surface S100.

[0034] The transparent conductive film 30 is translucent so that it can be transferred using light, such as UV (Ultraviolet) light, in the nanoimprint method. The light transmittance of the transparent conductive film 30 is approximately the same as that of the quartz glass substrate 20. Furthermore, the transparent conductive film 30 is also conductive. This suppresses charge-up. As a result, as will be explained later, microtrench T can be suppressed. The composition of the transparent conductive film 30 is, for example, ITO (Indium Tin Oxide), but is not limited to this. The composition ratio of In2O3 to SnO2 in ITO varies depending on, for example, the composition ratio of the sputtering target. The composition ratio of In2O3 to SnO2 is, for example, 95:5 to 80:20, but is not limited to this.

[0035] The component 40 is provided on the transparent conductive film 30. The component 40 has a plurality of protrusions 41. The plurality of protrusions 41 are provided so as to project from the upper surface of the transparent conductive film 30 corresponding to the surface S100, on the side opposite to the substrate 20. The plurality of protrusions 41 have different heights. The height of the protrusions 41 is approximately perpendicular to the surface S100. More specifically, the height of the plurality of protrusions 41 changes in a step-like manner depending on the position on the surface S20. That is, the height of the protrusions 41 decreases or increases as it moves away from any position on the surface S20.

[0036] The composition of the protrusion 41, i.e., the composition of member 40, is the same as the composition of the substrate 20. However, member 40 and substrate 20 are manufactured by different methods. Member 40 is formed, for example, by sputtering, and substrate 20 is formed, for example, by synthesis. The composition of the protrusion 41, i.e., the composition of member 40, is, for example, SiO2.

[0037] The protective film 50 covers the surface layer of the uneven pattern of the template 100. The protective film 50 covers the multiple protrusions 41 and the surface S100. More specifically, the protective film 50 is provided along the upper and side surfaces of the protrusions 41 and along the upper surface of the transparent conductive film 30. If the transparent conductive film 30 is exposed to the outermost layer of the template 100, it may adversely affect physical properties such as surface force. By providing the protective film 50, the composition can be standardized to adjust the physical properties of the surface or the surface condition (e.g., the release force in nanoimprint 30). The composition of the protective film 50 is the same as the composition of the substrate 20. For example, the composition of the protective film 50 is SiO2.

[0038] Next, we will describe the manufacturing method of template 100.

[0039] Figures 7A to 7E are cross-sectional views showing an example of a method for manufacturing the template 100 according to the first embodiment.

[0040] First, as shown in Figure 7A, a transparent conductive film 30 is formed on the surface S20 of the substrate 20, and a member 40 is formed on the transparent conductive film 30. Then, a stepped pattern is formed on the member 40, a mask material (first mask material) 60 is formed on the member 40 along the stepped pattern, and a mask material (second mask material) 70 is formed on the mask material 60.

[0041] A staircase pattern is a pattern in which the height of the tread surface S increases or decreases sequentially in a certain direction. That is, a staircase pattern has a tread surface S of a first height and a tread surface S of a second height different from the first height. The method for forming the staircase pattern will be explained later with reference to Figures 8A to 8G.

[0042] The transparent conductive film 30 and the member 40 are formed, for example, by sputtering.

[0043] The mask material 60 is, for example, a chromium (Cr)-containing film. The chromium-containing film may be pure chromium, or it may also contain carbon (C), oxygen (O), nitrogen (N), etc. The thickness of the mask material 60 is such that it does not disappear even when the SiO2 of the component 40 is processed to its maximum extent. The thickness of the mask material 60 is set, for example, to be greater than the value obtained by dividing the maximum processing amount of the component 40 by the selectivity ratio of the mask material 60 during processing of the component 40. The thickness of the mask material 60 is, for example, approximately 2 nm to approximately 300 nm. The lower limit of the mask material 60 thickness is determined by the spontaneous oxidation reaction. If the thickness of the mask material 60 is below the lower limit, the entire mask material 60 will be oxidized. For example, chromium oxide has lower plasma resistance than chromium, and therefore may not function properly as a mask material. The upper limit of the mask material 60 thickness is determined by the film stress. If the thickness of the mask material 60 is thicker than the upper limit, defects such as film peeling may occur more easily.

[0044] The mask material 70 is, for example, a novolac resin-based resist or a resist with polyhydroxystyrene (PHS) as the base resin.

[0045] Figures 8A to 8G are cross-sectional views showing an example of a method for forming a stepped pattern according to the first embodiment. In the example shown in Figures 8A to 8G, a four-step stepped pattern is formed by two lithography steps.

[0046] First, as shown in Figure 8A, a member 40 is formed on a transparent conductive film 30 (not shown). The height of the upper surface of member 40 is approximately constant.

[0047] Next, as shown in Figure 8B, a mask material 70 is formed on the member 40. The mask material 70 is, for example, a resist. A pattern is formed on the mask material 70 by lithography. Lithography is performed, for example, using laser drawing and alkaline development. In the example shown in Figure 8B, the mask material 70 is formed on the left half of the upper surface of the member 40.

[0048] Next, as shown in Figure 8C, the member 40 is processed using the mask material 70 as a mask. This forms the two-tiered tread surface S.

[0049] Next, as shown in Figure 8D, the mask material 70 is formed again on the member 40.

[0050] Next, as shown in Figure 8E, a pattern is formed on the mask material 70 by lithography. In the example shown in Figure 8E, the mask material 70 is formed on the left half of the tread surface S.

[0051] Next, as shown in Figure 8F, the member 40 is processed using the mask material 70 as a mask. This forms four tread surfaces S. In this way, a four-step staircase pattern is formed by two lithography processes.

[0052] Next, the mask material 70 is removed as shown in Figure 8G.

[0053] As shown in Figures 8A to 8G, etching is performed while changing the position and width of the mask material 70. If the number of lithography steps is n, a stepped pattern with 2 to the power of n steps can be formed.

[0054] Here, as shown in Figure 7A, microtrenches (grooves) T may be formed at the edges of the tread surface S. A known model is that microtrenches are formed during the dry machining process by etching being promoted by ions reflected from the side walls and charge-up of the substrate (member 40).

[0055] If microtrench T exists near the region where the protrusions 41 of the uneven pattern are formed, abnormalities may occur in the height and shape of the protrusions 41. Therefore, the protrusions 41 are formed at a position away from the microtrench T.

[0056] Next, as shown in Figure 7B, a pattern P1 is formed on the mask material 70. For example, EB (Electron Beam) lithography can be used to form the pattern P1 on the mask material 70, but it is not limited to this, and nanoimprint lithography may also be used.

[0057] The width of the mask material 70 for pattern P1 corresponds to the width of the protrusions 41 and is smaller than the width of the tread surface S of the stepped pattern. The mask material 70 for pattern P1 is formed in a region away from the edge of the tread surface S so as to be away from the microtrench T. Note that the width refers to, for example, the width in the horizontal direction relative to the substrate 20.

[0058] Next, as shown in Figure 7C, the mask material 60 is processed using the mask material 70 of pattern P1 as a mask. The processing of the mask material 60 is carried out, for example, using a plasma with highly selective chlorine (Cl2) gas conditions for the quartz (SiO2) of the component 40.

[0059] For the plasma treatment conditions of the mask material 60, a mixed gas of, for example, chlorine (Cl2) and oxygen (O2) is used. The mixing ratio of chlorine to oxygen is, for example, 5:1. The process pressure is, for example, about 0.2 to about 40 Pa. The applied power density is, for example, about 1 W / cm². 2 The following applies:

[0060] Next, as shown in Figure 7D, the processed mask material 60 is used as a mask to process the member 40. The processing of member 40 is performed, for example, by dry etching. This forms multiple protrusions 41 at once. In areas other than those where the protrusions 41 are formed, member 40 is removed until the transparent conductive film 30 is exposed.

[0061] More specifically, the component 40 is processed so that the mask material 60 remains and the transparent conductive film 30 is exposed. This allows multiple protrusions 41 of different heights corresponding to the stepped pattern to be formed on the upper surface (surface S30) of the transparent conductive film 30 corresponding to the surface S100.

[0062] For the plasma treatment conditions of component 40, a mixed gas of, for example, a fluorine (F)-containing gas and oxygen (O2) is used. For example, CF4 is used as the fluorine-containing gas. The mixing ratio of CF4 to O2 is, for example, 4:1. The process pressure is, for example, approximately 0.2 to approximately 40 Pa. The applied power density is, for example, approximately 1 W / cm². 2 The following applies:

[0063] The transparent conductive film 30 functions as a stopper layer. Therefore, the processing stops at the transparent conductive film 30. This allows the processing time to be extended to suppress etching residue (over-etching).

[0064] Furthermore, because the mask material 60 remains, the top of the protrusion 41 is not affected by the process shown in Figure 7D. Therefore, the top of the protrusion 41 is approximately rectangular.

[0065] Next, as shown in Figure 7E, the mask material 60 is removed. Then, the template 100 shown in Figure 6 is completed by forming a protective film 50. The protective film 50 is formed, for example, by atomic layer deposition.

[0066] Next, a method for manufacturing a semiconductor device using template 100 will be described.

[0067] First, a resist material is applied or dropped onto a substrate (wafer). The substrate is, for example, a semiconductor substrate (such as a silicon wafer) and a workpiece substrate (workpiece wafer) that includes the film to be processed on the semiconductor substrate. The semiconductor substrate is, for example, substrate 1 shown in Figure 1, and the film to be processed includes, for example, the laminate 120 shown in Figure 2. When processing the semiconductor substrate itself, the substrate does not need to include the film to be processed. The substrate is an example of a wafer, and the resist material is an example of a resin.

[0068] Next, the pattern-forming surface of the template 100 is pressed onto the resist material, and the resist material is cured. This transfers the uneven pattern of the template 100 to the resist material.

[0069] Next, the template 100 is released from the resist material. This forms a resist film on the substrate, consisting of the cured resist material and having a resist pattern. In this way, the process using the template 100 is completed.

[0070] As described above, according to the first embodiment, the multiple protrusions 41 have different heights. The height of the multiple protrusions 41 corresponds to the height of the step surface S of the stepped pattern formed on the member 40. Furthermore, the multiple protrusions 41 are provided so as to protrude from the upper surface of the transparent conductive film 30 corresponding to the surface S100, on the side opposite to the substrate 20. As a result, since the area around the base of the protrusions 41 is the transparent conductive film 30, the generation of microtrench T around the protrusions 41 can be suppressed. In addition, since the transparent conductive film 30 functions as a stopper layer, the processing time can be extended to suppress etching residue. This allows for a more appropriate formation of the pattern on the template 100. Because a template 100 with a more appropriate pattern can be obtained, a semiconductor device with a more appropriate transfer pattern can be manufactured.

[0071] Next, a comparative example will be described in which a stepped pattern is not formed, and a mask material (resist) with a height corresponding to the height of the protrusions 41 is formed. In this comparative example, the transparent conductive film 30 is not provided.

[0072] Figure 9 is a cross-sectional view showing an example of the configuration of template 100a according to a comparative example.

[0073] In the example shown in Figure 9, the top of the protrusion 21 on the substrate 20 is rounded. This rounding of the top of the protrusion 21 (shoulder rounding) occurs because the corners of the protrusion 21 become rounded, as will be explained later with reference to Figures 10E and 10F.

[0074] The dashed line L1 shown in Figure 9 represents the ideal height of the convex portion 21. The dashed line L1 indicates that the height of the convex portion 21 changes linearly. The dashed line L2 is the line connecting the peaks of the convex portion 21 shown in Figure 9. The dashed line L2 deviates from the dashed line L1. That is, the height of the convex portion 21 is inconsistent.

[0075] Furthermore, a micro-trench T is formed at the base of the protrusion 21.

[0076] Figures 10A to 10F are cross-sectional views showing an example of a manufacturing method for template 100a using a comparative example.

[0077] First, as shown in Figure 10A, a mask material 60 is formed on the substrate 20, a mask material 70 is formed on the mask material 60, and a pattern is formed on the mask material 70. The pattern on the mask material 70 is formed to have different heights according to the height of the protrusions 21. Figure 10A shows an example of forming three protrusions 21.

[0078] Next, as shown in Figure 10B, the mask material 60 is processed using the mask material 70 as a mask.

[0079] Next, as shown in Figure 10C, processing of the substrate 20 using the mask material 60 as a mask is started.

[0080] Next, as shown in Figure 10D, the process shown in Figure 10C is continued, and the substrate 20 is processed using the mask material 60 as a mask. In the example shown in Figure 10D, the mask material 60 corresponding to the right protrusion 21 has disappeared.

[0081] Next, as shown in Figure 10E, the process shown in Figure 10D is continued, and the substrate 20 is processed using the mask material 60 as a mask. The top of the right protrusion 21 is rounded due to the processing. Also, the mask material 60 on the central protrusion 21 has disappeared.

[0082] Next, as shown in Figure 10F, the process shown in Figure 10E is continued, and the substrate 20 is processed using the mask material 60 as a mask. This completes the template 100a shown in Figure 9. In the example shown in Figure 10F, the mask material 60 has completely disappeared, and the tops of the three protrusions 21 are rounded.

[0083] In the comparative example, as shown in Figures 10D to 10F, the mask material 60 disappears during processing, and etching proceeds simultaneously on both the top and bottom surfaces of the pattern (co-cutting). The top of the protrusion 21 is preferably rectangular, as shown by the dashed line L3, but because the mask material 60 disappears during processing, the top of the protrusion 21 becomes rounded. This is because etching of the top of the protrusion 21, which is not protected by the mask material 60, also proceeds from the side. Differences in the rate of lateral etching can cause variations in the height of the protrusion 21. In addition, microtrench T is formed in the substrate around the protrusion 21. This is because, for example, charge-up occurs due to the quartz in the substrate 20, causing localized etching. The rounding of the top of the protrusion 21, the variations in the height of the protrusion 21, and the microtrench T at the base of the protrusion 21 adversely affect the transferred pattern.

[0084] In contrast, in the first embodiment, the mask material 60 remains until the processing of forming the protrusions 41 is completed, so rounding of the tops of the protrusions 41 and variations in the height of the protrusions 41 can be suppressed. Also, in the first embodiment, the protrusions 41 are formed at a position away from the microtrenches T that form in the stepped pattern, so they are not affected by the microtrenches T that form in the stepped pattern. Furthermore, since a transparent conductive film 30 is provided at the bottom for forming the protrusions 41, charge-up can be suppressed, and microtrenches T are not formed at the base around the protrusions 41. Therefore, in the first embodiment, rounding of the tops of the protrusions 41, variations in the height of the protrusions 41, and the effects of microtrenches T can be suppressed. As a result, a more appropriate pattern template 100 can be formed.

[0085] (First embodiment, first modified example) Figures 11A to 11F are cross-sectional views showing an example of a method for manufacturing the template 100 according to a first modification of the first embodiment. The first modification of the first embodiment differs from the first embodiment in that a material film 80 is formed between the member 40 and the mask material 60.

[0086] In the example shown in Figure 11A, a stepped pattern is formed on the member 40, similar to Figure 7A. Then, a material film 80 is formed on the member 40, and the material film 80 is planarized. The planarization of the material film 80 is performed, for example, by CMP (Chemical Mechanical Polishing). Subsequently, a mask material 60 is formed on the material film 80, and a mask material 70 is formed on the mask material 60.

[0087] For the material film 80, a carbon (C) film such as a DLC (Diamond-Like Carbon) film can be used.

[0088] Next, as shown in Figure 11B, a pattern P1 is formed on the mask material 70. The width of the mask material 70 with pattern P1 is smaller than the width of the tread surface S of the staircase pattern.

[0089] Next, as shown in Figure 11C, the mask material 60 is processed using the mask material 70 of pattern P1 as a mask.

[0090] Next, as shown in Figure 11D, the processed mask material 60 is used as a mask to process the material film 80. The material film 80 is processed, for example, by ashing with an oxygen (O2) plasma.

[0091] For the plasma treatment conditions of the material film 80, for example, oxygen gas is used as the gas, but nitrogen gas or a mixture of oxygen and nitrogen gas may also be used. The process pressure is, for example, about 0.2 to about 40 Pa. The applied power density is, for example, about 1 W / cm². 2 The following applies. Note that the plasma treatment conditions for the mask material 70 (resist) may be the same as those for the material film 80.

[0092] Next, as shown in Figure 11E, the processed material film 80 is used as a mask to process the component 40.

[0093] More specifically, the component 40 is processed so that the material film 80 remains and the transparent conductive film 30 is exposed. This allows multiple protrusions 41 of different heights corresponding to the stepped pattern to be formed on the upper surface (surface S30) of the transparent conductive film 30 corresponding to the surface S100.

[0094] Furthermore, as shown in Figure 11E, since the material film 80 remains, the top of the protrusion 41 is not affected by the dry etching of the member 40. Therefore, the top of the protrusion 41 is approximately rectangular.

[0095] Next, the material film 80 is removed as shown in Figure 11F.

[0096] Subsequently, by forming the protective film 50, the template 100 shown in Figure 6 is completed.

[0097] In the first modified example of the first embodiment, the stepped pattern can be flattened by the material film 80. As a result, the pattern P1 of the mask material 70 can be formed on a substantially flat surface, as shown in Figure 11B, compared to Figure 7B in the first embodiment. This allows for more appropriate pattern formation.

[0098] As in the first modification of the first embodiment, a material film 80 may be formed between the member 40 and the mask material 60. The template 100 and semiconductor device according to the first modification of the first embodiment can obtain the same effects as in the first embodiment.

[0099] (Second modified example of the first embodiment) Figures 12A to 12F are cross-sectional views showing an example of a method for manufacturing the template 100 according to a second modification of the first embodiment. The second modification of the first embodiment differs from the first embodiment in that the height of the tread surface S is corrected after the formation of the stepped pattern.

[0100] First, as shown in Figure 12A, a staircase pattern is formed on the member 40. In the example shown in Figure 12A, three tread surfaces S of the staircase pattern are shown, and the heights (steps) of the tread surfaces S are not equally spaced. The dashed line L4 represents an ideal, equally spaced staircase pattern. Compared to the dashed line L4, the central tread surface Sc shown in Figure 12A is higher, and the right tread surface Sr shown in Figure 12A is lower. Since the height of the tread surface S affects the height of the protrusion 41, the height of the protrusion 41 can be adjusted by correcting the height of the tread surface S. As shown in Figures 7B to 7E, the protrusion 41 is formed in a portion of the tread surface S. Therefore, height correction is performed in the region that includes the region where the protrusion 41 is formed. That is, the tread surface S includes a region where height correction is performed, and the region where the protrusion 41 is formed includes a region where height correction is performed.

[0101] Next, the height of the tread surface S of the staircase pattern is measured. The height of the tread surface S is measured, for example, using an atomic force microscope.

[0102] Next, based on the measurement results of the height of the tread surface S, the height of the region of the tread surface S that includes at least the region where the protrusion 41 is formed is adjusted. For example, the following correction is made based on the difference between the measured height of the tread surface S and, for example, the preset height of the tread surface S shown by the dashed line L4.

[0103] Next, as shown in Figure 12B, a mask material 70 is formed, and a hole H70 is formed in the mask material 70 that exposes the tread surface Sc. The width of the hole H70 is smaller than the width of the central tread surface Sc, and wider than the width of the area where the protrusion 41 is formed.

[0104] Next, as shown in Figure 12C, a portion of the tread surface Sc is removed using the mask material 70 as a mask. This allows the height of the tread surface Sc to be partially reduced. The amount of adjustment to the height of the tread surface S is determined by the amount of etching of the component 40.

[0105] Next, as shown in Figure 12D, the mask material 70 is reformed, and holes H70 are formed in the mask material 70 to expose the tread surface Sr.

[0106] Next, as shown in Figure 12E, a component is formed within the hole H70. The component 40 is formed, for example, by atomic layer volume.

[0107] Next, as shown in Figure 12F, the mask material 70 is removed. The member formed on the mask material 70 is also removed. The member 40 formed in the process shown in Figure 12E remains in the area where the hole H70 is formed (lift-off). This allows the height of the tread surface Sr to be partially increased. The amount of adjustment in the height of the tread surface S is determined by the amount of film deposited on the member 40.

[0108] As shown in Figure 12F, the height of a portion of the tread surface S can be aligned to the height of the tread surface S shown by the dashed line L4. A protrusion 41 is formed in the area where the height has been aligned. This allows the height of the protrusion 41 to be adjusted by correcting the height of the tread surface S after the staircase pattern has been formed. As a result, the pattern accuracy of the pillar pattern in the template 100 can be improved.

[0109] Furthermore, height measurement is performed relative to the tread surface S. Measuring the height of the tread surface S is easier than measuring the height of the protrusion 41.

[0110] As in the second modification of the first embodiment, the height correction of the tread surface S may be performed after the formation of the stepped pattern. The template 100 and semiconductor device according to the second modification of the first embodiment can obtain the same effects as in the first embodiment.

[0111] (Third modified example of the first embodiment) Figure 13 is a cross-sectional view showing an example of the configuration of template 100 according to a third modification of the first embodiment. The third modification of the first embodiment differs from the first embodiment in the composition of the protrusions of template 100.

[0112] The template 100 comprises a plurality of protrusions 91. The composition of the protrusions 91 differs from that of the protrusions 41 in the first embodiment.

[0113] The template 100 further includes a transparent conductive member 90.

[0114] The transparent conductive member 90 is provided on the transparent conductive film 30. The transparent conductive member 90 has a plurality of protrusions 91. The composition of the transparent conductive member 90 is different from the composition of the substrate 20. The composition of the protrusions 91 is different from that of the protrusions 91 in the first embodiment. The composition of the protrusions 91 is the same as that of the transparent conductive film 30. The pillar pattern of the protrusions 91 of the transparent conductive member 90 is stronger and less prone to breakage than the pillar pattern of the protrusions 41 of member 40.

[0115] The other configurations of the template 100 and semiconductor device according to the third modification of the first embodiment are the same as the corresponding configurations of the template 100 and semiconductor device according to the first embodiment, so a detailed description thereof is omitted.

[0116] Figures 14A to 14F are cross-sectional views showing an example of a template manufacturing method according to a third modification of the first embodiment.

[0117] After forming the mask material 70 (see Figure 7A), a pattern P2 is formed on the mask material 70 as shown in Figure 14A, and the mask material 60 is processed using the mask material 70 with pattern P2 as a mask.

[0118] The width of the opening in the mask material 70 of pattern P2 corresponds to the width of the protrusion 91 and is smaller than the width of the tread surface S of the stepped pattern. The opening in the mask material 70 of pattern P2 is formed in a region away from the edge of the tread surface S so as to be away from the micro-trench T.

[0119] Next, as shown in Figure 14B, the processed mask material 60 is used as a mask to process the member 40. More specifically, the member 40 is processed so that the transparent conductive film 30 is exposed. This creates a hole (first hole) H40 in the member 40. After that, the mask material 70 is removed.

[0120] Next, the mask material 60 is removed as shown in Figure 14C.

[0121] Next, as shown in Figure 14D, a transparent conductive member 90 is formed on the tread surface S and within the hole H40. The transparent conductive member 90 is formed, for example, by plating, embedded within the hole H40, and formed substantially uniformly on the staircase pattern (tread surface S). The composition of the transparent conductive member 90 is the same as that of the transparent conductive film 30, as described above.

[0122] Next, as shown in Figure 14E, the transparent conductive member 90 on the tread surface S is removed until member 40 is exposed.

[0123] The transparent conductive member 90 is removed, for example, using an iodine(I)-based gas condition plasma. For the plasma treatment conditions of the transparent conductive member 90, for example, HI (Hydrogen Iodide) gas is used as the gas.

[0124] Next, as shown in Figure 14F, member 40 is removed. This allows multiple protrusions 91 of different heights corresponding to the stepped pattern to be formed on the upper surface (surface S30) of the transparent conductive film 30 corresponding to surface S100.

[0125] In the process shown in Figure 14E, the transparent conductive member 90 is removed so that the top of the protrusion 91 is exposed on the footplate surface S, which is a substantially flat surface. Therefore, the top of the protrusion 91 shown in Figure 14E is substantially rectangular.

[0126] Subsequently, by forming a protective film 50, the template 100 shown in Figure 13 is completed.

[0127] As in the third modification of the first embodiment, the composition of the protrusions of the template 100 may be changed. The template 100 and semiconductor device according to the third modification of the first embodiment can obtain the same effects as in the first embodiment.

[0128] (Second Embodiment) Figure 15 is a cross-sectional view showing an example of the configuration of template 100 according to the second embodiment. The second embodiment differs from the first embodiment in that a stepped pattern is not formed.

[0129] The template 100 according to the second embodiment does not include the transparent conductive film 30, the member 40, and the protective film 50.

[0130] The substrate 20 has a plurality of protrusions 21. The plurality of protrusions 21 are provided so as to protrude from the surface S20. The plurality of protrusions 21 have different heights.

[0131] The other configurations of the template 100 and semiconductor device according to the second embodiment are the same as the corresponding configurations of the template 100 and semiconductor device according to the first embodiment, so a detailed description thereof is omitted.

[0132] Figures 16A to 16E are cross-sectional views showing an example of a method for manufacturing the template 100 according to the second embodiment.

[0133] First, as shown in Figure 16A, multiple holes (second holes) H20 of different depths are formed on the surface S20 of the substrate 20.

[0134] Next, as shown in Figure 16B, a material film 80 is formed on the surface S20 and within the multiple holes H20. Then, a mask material 60 is formed on the material film 80, a mask material 70 is formed on the mask material 60, and a pattern P3 is formed on the mask material 70.

[0135] The width of the mask material 70 for pattern P3 corresponds to the width of the protrusion 21 and is smaller than the width of the hole H20. The mask material 70 for pattern P3 is formed in a region away from the edge of the hole H20 so as to be away from the microtrench T.

[0136] Furthermore, one method for embedding the material film 80 in the hole H20 is to apply a UV-curing resin liquid to the pattern of the hole H20, fill it by capillary action, and then cure it by UV irradiation.

[0137] Furthermore, the material film 80 may be flattened after its formation. If the material film 80 becomes excessively thick, it can lead to a high aspect ratio of the processing mask, potentially negatively affecting pattern formation. By flattening the material film 80, the height of the processing mask can be adjusted.

[0138] Next, as shown in Figure 16C, the mask material 60 is processed using the mask material 70 of pattern P3 as a mask.

[0139] Next, as shown in Figure 16D, the processed mask material 60 is used as a mask to process the substrate 20 and the material film 80 at approximately the same processing speed. The processing of the substrate 20 and the material film 80 is carried out, for example, by plasma etching using a fluorocarbon-based gas such as CF4 or CHF3, under conditions that allow the material film 80 and the substrate 20 to be processed with a selectivity ratio of 1:1.

[0140] Next, as shown in Figure 16E, the machining process shown in Figure 16D is continued to the desired depth. This allows multiple protrusions 21 of different heights corresponding to the depths of the multiple holes H20 to be formed on the surface S20 corresponding to the surface S100. Furthermore, the multiple protrusions 21 are formed all at once.

[0141] Subsequently, the mask material 60 and the material film 80 are removed to complete the template 100 shown in Figure 15. The mask material 60 is removed, for example, using a plasma with highly selective chlorine (Cl2) gas conditions for the quartz substrate 20. The material film 80 is removed, for example, by ashing with an oxygen (O2) plasma.

[0142] During the machining process shown in Figures 16D and 16E, a material film 80 is present on the sidewalls of the protrusions 21 (pillar patterns), so it is expected that sputtering on the sidewalls due to reflected ions will have a deposition effect. As a result, at the bottom of the pillar pattern obtained as the final shape, microtrenches may be minimal even if the transparent conductive film 30 is not provided, or the base of the protrusions 21 may become tapered, as shown in Figure 15.

[0143] In the second embodiment, a stepped pattern is not formed, but a pattern of relatively wide holes H20 is formed, and a pillar pattern is formed having protrusions 21 with a width smaller than the width of the holes H20. The height of the protrusions 21 is determined by the depth of the relatively wide holes H20.

[0144] Furthermore, unlike a stepped pattern, the hole H20 pattern does not require the height to change sequentially. For example, when forming a hole pattern where the height of the protrusions 21 varies depending on the position, a hole H20 pattern is formed on the substrate 20 instead of a stepped pattern.

[0145] As in the second embodiment, a stepped pattern does not need to be formed. The template 100 and semiconductor device according to the second embodiment can obtain the same effects as in the first embodiment.

[0146] (Modified version of the second embodiment) Figures 17A to 17D are cross-sectional views showing an example of a method for manufacturing the template 100 according to a modification of the second embodiment. The modification of the second embodiment differs from the second embodiment in that pillars P20 are formed on the surface S20 of the substrate 20 instead of holes H20.

[0147] First, as shown in Figure 17A, multiple pillars (columnar parts) P20 of different heights are formed on the surface S20 of the substrate 20.

[0148] Next, as shown in Figure 17B, a material film 80 is formed on the surface S20 and on multiple pillars P20. Then, a mask material 60 is formed on the material film 80, a mask material 70 is formed on the mask material 60, and a pattern P3 is formed on the mask material 70.

[0149] The width of the mask material 70 for pattern P3 corresponds to the width of the protrusion 21 and is smaller than the width of the pillar P20. The mask material 70 for pattern P3 is formed in a region away from the end of the pillar P20 so as to be away from the microtrench T.

[0150] Furthermore, the material film 80 may be flattened after its formation. If the material film 80 becomes excessively thick, it can lead to a high aspect ratio of the processing mask, potentially negatively affecting pattern formation. By flattening the material film 80, the height of the processing mask can be adjusted.

[0151] Next, as shown in Figure 17C, the mask material 60 is processed using the mask material 70 of pattern P3 as a mask. The process in Figure 17C is almost the same as the process in Figure 16C.

[0152] Next, as shown in Figure 17D, the processed mask material 60 is used as a mask to process the substrate 20 and the material film 80 at approximately the same processing speed. The process in Figure 17D is almost the same as the process in Figure 16D.

[0153] Subsequently, the machining process shown in Figure 17D is continued to the desired depth, similar to Figure 16E. This allows multiple protrusions 21 of different heights corresponding to the heights of the multiple pillars P20 to be formed on the surface S20 corresponding to the surface S100. Furthermore, the multiple protrusions 21 are formed simultaneously.

[0154] Subsequently, by removing the mask material 60 and the material film 80, the template 100 shown in Figure 15 is completed.

[0155] As in the modified example of the second embodiment, a pillar P20 may be formed instead of the hole H20. The template 100 and semiconductor device according to the modified example of the second embodiment can obtain the same effects as in the second embodiment.

[0156] (Third embodiment) Figure 18 is a cross-sectional view showing an example of the configuration of the template 100 according to the third embodiment. The third embodiment differs from the first embodiment in that the uneven pattern of the template 100 is a hole pattern, rather than a pillar pattern.

[0157] The template 100 has a plurality of recesses 42. The plurality of recesses 42 provided on the surface S100 form a hole pattern as an uneven pattern.

[0158] The hole pattern of the template 100 according to the third embodiment shown in Figure 18 has an inverted pattern of relief compared to the pillar pattern of the template 100 according to the first embodiment shown in Figure 6. The template 100 shown in Figure 18 is used as a master template to form a replica template. The replica template has the same pillar pattern as the template 100 shown in Figure 6 because the relief is inverted by transfer. The semiconductor device is formed using the replica template. That is, multiple recesses (contact holes H1 to H5) of different depths for forming the contact plug 11 can be formed using the replica template. Note that the replica template formed from the template 100 shown in Figure 18 does not necessarily have to have, for example, a transparent conductive film 30.

[0159] A stepped pattern is provided on surface S20 of the substrate 20.

[0160] The transparent conductive film 30 is provided on the surface S20 in a film-like (layered) manner along a stepped pattern.

[0161] Member 40 is provided on the transparent conductive film 30. Member 40 has a surface (third surface) S40 opposite to the transparent conductive film 30. Surface S40, which is the upper surface of member 40, is substantially flat. Member 40 has a plurality of recesses 42. The plurality of recesses 42 are provided so as to extend from surface S40, which is the upper surface of member 40 corresponding to surface S100, down to the transparent conductive film 30. That is, the plurality of recesses 42 are recessed down to the stepped pattern of the transparent conductive film 30. The plurality of recesses 42 have different depths corresponding to the stepped pattern. The depth of the recesses 42 is substantially perpendicular to surface S100.

[0162] The composition of component 40 is the same as the composition of the substrate 20. For example, the composition of component 40 is SiO2.

[0163] The protective film 50 covers the transparent conductive film 30 and member 40 exposed from the plurality of recesses 42. The protective film 50 covers the plurality of recesses 42 and the surface S100. More specifically, the protective film 50 is provided along the bottom and side portions of the recesses 42, and along the top surfaces of the transparent conductive film 30 and member 40. The composition of the protective film 50 is the same as the composition of the substrate 20. For example, SiO2 is used for the composition of the protective film 50.

[0164] The other configurations of the template 100 and semiconductor device according to the third embodiment are the same as the corresponding configurations of the template 100 and semiconductor device according to the first embodiment, so a detailed description thereof is omitted.

[0165] Figures 19A to 19E are cross-sectional views showing an example of a method for manufacturing the template 100 according to the third embodiment.

[0166] First, as shown in Figure 19A, a stepped pattern is formed on the surface S20 of the substrate 20, a transparent conductive film 30 is formed on the surface S20 of the substrate 20 along the stepped pattern, a member 40 is formed on the transparent conductive film 30, and the member 40 is flattened. Then, a mask material 60 is formed on the member 40, a mask material 70 is formed on the mask material 60, and a pattern P4 is formed on the mask material 70. The method for forming the stepped pattern on the substrate 20 is the same as the method for forming the stepped pattern on the member 40 described with reference to Figures 8A to 8G.

[0167] The width of the opening in the mask material 70 of pattern P4 corresponds to the width of the recess 42 and is smaller than the width of the tread surface S of the stepped pattern. The opening in the mask material 70 of pattern P4 is formed in a region away from the edge of the tread surface S so as to be away from the micro-trench T.

[0168] Next, as shown in Figure 19B, the mask material 60 is processed using the mask material 70 of pattern P2 as a mask.

[0169] Next, as shown in Figure 19C, the processed mask material 60 is used as a mask to process the member 40. More specifically, the member 40 is processed so that the transparent conductive film 30 is exposed. This allows multiple recesses 42 of different depths corresponding to the stepped pattern to be formed on the upper surface (surface S40) of the member 40 corresponding to the surface S100.

[0170] The transparent conductive film 30 functions as a stopper layer. Therefore, the processing stops at the transparent conductive film 30. This allows the processing time to be extended to suppress etching residue (over-etching).

[0171] Next, the mask material 60 is removed as shown in Figure 19D.

[0172] Next, as shown in Figure 19E, the component 40 is polished until the transparent conductive film 30 is exposed. After that, the protective film 50 is formed to complete the template 100 shown in Figure 18.

[0173] As in the third embodiment, the uneven pattern may be a hole pattern instead of a pillar pattern. The template 100 and semiconductor device according to the third embodiment can obtain the same effects as in the first embodiment. In addition, the template 100 according to the third embodiment may be combined with the second modification of the first embodiment. In this case, the height of the area of ​​the step surface S of the stepped pattern formed on the substrate 20 that includes at least the area in which the recess 42 is formed is adjusted.

[0174] While several embodiments of the present invention have been described, these embodiments are presented as examples only and are not intended to limit the scope of the invention. These embodiments can be carried out in a variety of other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the claims and their equivalents.

[0175] (Note) The details of the above-described embodiment are provided below. (Note 1) A light-transmitting film with a different composition from that of the substrate is formed on the first surface of a substrate having a first surface. A first member is formed on the light-transmitting film, A stepped pattern is formed on the first member. A first mask material is formed on the first member along the stepped pattern, A second mask material with a first pattern is formed on the first mask. Using the second mask material of the first pattern as a mask, the first mask material is processed. Using the processed first mask material as a mask, the first member is processed such that the first mask material remains and the light-transmitting film is exposed, thereby forming a plurality of protrusions of different heights corresponding to the stepped pattern on the second surface of the light-transmitting film opposite to the substrate. A method for manufacturing templates that includes the following: (Note 2) A light-transmitting film with a different composition from that of the substrate is formed on the first surface of a substrate having a first surface. A first member is formed on the light-transmitting film, A stepped pattern is formed on the first member. A material film is formed on the first member, The aforementioned material film is planarized, A first mask material is formed on the aforementioned material film. A second mask material with a first pattern is formed on the first mask. Using the second mask material of the first pattern as a mask, the first mask material is processed. Using the processed first mask material as a mask, the material film is processed. Using the processed material film as a mask, the first member is processed such that the material film remains and the light-transmitting film is exposed, thereby forming a plurality of protrusions of different heights corresponding to the stepped pattern on the second surface of the light-transmitting film opposite to the substrate. A method for manufacturing templates that includes the following: (Note 3) The method for manufacturing a template according to (Appendix 1) or (Appendix 2), wherein the width of the second mask material of the first pattern corresponds to the width of the protrusion and is smaller than the width of the tread surface of the stepped pattern. (Note 4) After forming the aforementioned stepped pattern, The height of the tread surface of the aforementioned staircase pattern is measured, Based on the measurement results of the height of the tread surface, the height of the region of the tread surface that includes at least the region where the protrusion is formed is adjusted. A method for manufacturing a template as described in any one of (Appendix 1) to (Appendix 3), further comprising the above. (Note 5) A light-transmitting film with a different composition from that of the substrate is formed on the first surface of a substrate having a first surface. A first member is formed on the light-transmitting film, A stepped pattern is formed on the first member. A first mask material is formed on the first member, A second mask material with a second pattern is formed on the first mask material. The first mask material is processed using the second mask material of the second pattern as a mask. By processing the first member using the processed first mask material as a mask so that the light-transmitting film is exposed, a plurality of first holes are formed in the first member. A light-transmitting member with a different composition from the substrate is formed in the plurality of first holes. A template comprising the ability to remove the first member to form a plurality of protrusions of different heights corresponding to the stepped pattern on the second surface of the light-transmitting film opposite to the substrate. (Note 6) The method for manufacturing a template as described in (Appendix 5), wherein the width of the opening of the second mask material in the second pattern corresponds to the width of the protrusion and is smaller than the width of the tread surface of the stepped pattern. (Note 7) A substrate having a first surface has a plurality of second holes of different depths, or a plurality of pillars of different heights formed on the first surface. A material film is formed on the first surface and in the plurality of second holes or on the plurality of pillars. A first mask material is formed on the aforementioned material film. A second mask material with a third pattern is formed on the first mask material. The first mask material is processed using the second mask material of the third pattern as a mask. Using the processed first mask material as a mask, the substrate and the material film are processed at approximately the same processing speed to form a plurality of protrusions on the first surface, each protruding at a different height corresponding to the depth of the plurality of second holes or the height of the plurality of pillars. A template that includes the following features. (Note 8) The method for manufacturing a template as described in (Appendix 7), wherein the width of the second mask material in the third pattern corresponds to the width of the protrusion and is smaller than the width of the second hole or the pillar. (Note 9) A stepped pattern is formed on the first surface of a substrate having a first surface. On the first surface, a light-transmitting film with a different composition from the substrate is formed along the stepped pattern. A first member is formed on the light-transmitting film, The first member is flattened, A first mask material is formed on the first member, A second mask material with a fourth pattern is formed on the first mask material. The first mask material is processed using the second mask material of the fourth pattern as a mask. By using the processed first mask material as a mask and processing the first member so that the light-transmitting film is exposed, a plurality of recesses of different depths corresponding to the stepped pattern are formed on the third surface of the first member opposite to the light-transmitting film. A method for manufacturing templates that includes the following: (Note 10) The method for manufacturing a template as described in (Appendix 9), wherein the width of the opening in the second mask material of the fourth pattern corresponds to the width of the recess and is smaller than the width of the tread surface of the stepped pattern. (Note 11) After forming the aforementioned stepped pattern, The height of the tread surface of the aforementioned staircase pattern is measured, Based on the measurement results of the height of the tread surface, the height of the region of the tread surface that includes at least the region in which the recess is formed is adjusted. A method for manufacturing the template described in (Appendix 9) or (Appendix 10), further comprising the above. [Explanation of symbols]

[0176] 100 template, 20 substrate, 21 protrusion, 30 transparent conductive film, 40 component, 41 protrusion, 42 recess, 50 protective film, 60 mask material, 70 mask material, 80 material film, 90 transparent conductive component, 91 protrusion, H20 hole, H40 hole, P1 pattern, P2 pattern, P3 pattern, P4 pattern, S tread surface, S20 surface, S30 surface, S40 surface, S100 surface

Claims

1. A substrate having a first surface, A transparent conductive film having a different composition from the substrate is provided on the first surface and has a second surface opposite to the substrate, The second surface is provided with a plurality of protrusions having a different composition from the transparent conductive film and having different heights, Equipped with, A template in which the composition of the protrusions is the same as the composition of the substrate.

2. The template according to claim 1, wherein the plurality of protrusions are a pillar pattern.

3. The template according to claim 1, wherein the transparent conductive film has a substantially constant height in a direction substantially perpendicular to the second surface with respect to the position of the second surface.

4. The second surface of the transparent conductive film is a flat surface. The plurality of protrusions each have a first protrusion, a second protrusion, and a third protrusion, each having a different height. The template according to claim 1.

5. The template according to claim 1, further comprising the plurality of protrusions and a first film having the same composition as the substrate that covers the second surface.

6. The template according to claim 1, wherein the transparent conductive film comprises ITO (Indium Tin Oxide).

7. The substrate contains quartz, The template according to claim 5, wherein the first film comprises silicon oxide.

8. The second protrusion is provided between the first protrusion and the third protrusion in a direction along the second surface. The height of the second protrusion is greater than the height of the first protrusion. The height of the third protrusion is greater than the height of the second protrusion. The template according to claim 4.

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