Cleaning apparatus and method for manufacturing semiconductor device

Abstract

To provide a cleaning device capable of suitably cleaning a container for substrate housing, and a method for manufacturing a semiconductor device.SOLUTION: According to an embodiment, a cleaning device comprises a temperature adjustment unit which supplies a first fluid for cleaning a container for substrate housing and having a first temperature and a second fluid for cleaning the container and having a second temperature lower than the first temperature by heating the first fluid and / or cooling the second fluid. The cleaning device further comprises a cleaning unit which heats and cleans the container by supplying the first fluid supplied from the temperature adjustment unit to a first surface of the container, and cools and cleans the container by supplying the second fluid supplied from the temperature adjustment unit to a second surface of the container.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] Embodiments of the present invention relate to a cleaning apparatus and a method for manufacturing a semiconductor device.

Background Art

[0002] When gas penetrates into the polymer forming a FOUP (Front Opening Unified Pod), this gas is difficult to remove even by washing with water. This gas can be removed, for example, by performing vacuum heating of the FOUP. However, when vacuum heating of the FOUP is performed, there is a risk that the FOUP may be deformed by heat or other problems may occur with the FOUP.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Non-Patent Documents

[0004]

Non-Patent Document 1

Non-Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0005] The present invention relates to a cleaning apparatus capable of suitably cleaning a container for storing a substrate and a method for manufacturing a semiconductor device.

Means for Solving the Problems

[0006] According to one embodiment, the cleaning apparatus includes a temperature control unit that supplies a first fluid having a first temperature and a second fluid having a second temperature lower than the first temperature by heating a first fluid for cleaning a container for storing substrates and / or cooling a second fluid for cleaning the container. The apparatus further includes a cleaning unit that heats and cleans the container by supplying the first fluid supplied from the temperature control unit to a first surface of the container, and cools and cleans the container by supplying the second fluid supplied from the temperature control unit to a second surface of the container. [Brief explanation of the drawing]

[0007] [Figure 1] This is a plan view showing the configuration of the cleaning device 1 according to the first embodiment. [Figure 2] This is a cross-sectional view showing the configuration of the cleaning device 1 according to the first embodiment. [Figure 3] This is a plan view showing a first example of the configuration of the cleaning device 1 of the first embodiment. [Figure 4] This is a cross-sectional view showing a first example of the configuration of the cleaning device 1 according to the first embodiment. [Figure 5] This is a plan view showing a second example of the configuration of the cleaning device 1 of the first embodiment. [Figure 6] This is a cross-sectional view showing a second example of the configuration of the cleaning device 1 according to the first embodiment. [Figure 7] This graph illustrates the cleaning of FOUP2 in the first embodiment. [Figure 8] This is a schematic diagram illustrating the cleaning of FOUP2 in the first embodiment. [Figure 9] This is another graph illustrating the cleaning of FOUP2 in the first embodiment. [Figure 10] This is another cross-sectional view showing a second example of the configuration of the cleaning device 1 of the first embodiment. [Figure 11] This is a plan view showing the configuration of the cleaning device 1 according to the second embodiment. [Figure 12] This is a cross-sectional view showing the configuration of the cleaning device 1 according to the second embodiment. [Figure 13]It is a cross-sectional view showing the configuration of the cleaning device 1 of the third embodiment. [Figure 14] It is a graph for explaining the operation of the cleaning device 1 of the third embodiment. [Figure 15] It is a cross-sectional view showing the configuration of the cleaning device 1 of the fourth embodiment. [Figure 16] It is another cross-sectional view showing the configuration of the cleaning device 1 of the fourth embodiment. [Figure 17] It is a perspective view showing the configuration of the nozzle 51 of the fourth embodiment. [Figure 18] It is an enlarged view showing the configuration of the nozzle 51 of the fourth embodiment. [Figure 19] It is a graph for explaining the operation of the cleaning device 1 of the fourth embodiment. [Figure 20] It is a plan view showing the configuration of the semiconductor manufacturing system of the fifth embodiment. [Figure 21] It is a cross-sectional view showing the first example of the configuration of the semiconductor manufacturing apparatus 75 of the fifth embodiment. [Figure 22] It is a cross-sectional view showing the second example of the configuration of the semiconductor manufacturing apparatus 75 of the fifth embodiment. [Figure 23] It is a flowchart for explaining the operation of the semiconductor manufacturing system of the fifth embodiment. [Figure 24] It is a three-view drawing showing the structure of the FOUP 2 of the sixth embodiment. [Figure 25] It is another three-view drawing showing the structure of the FOUP 2 of the sixth embodiment. [Figure 26] It is another three-view drawing showing the structure of the FOUP 2 of the sixth embodiment.

Embodiments for Carrying Out the Invention

[0008] Hereinafter, embodiments of the present invention will be described with reference to the drawings. In FIGS. 1 to 26, the same components are denoted by the same reference numerals, and redundant descriptions are omitted.

[0009] (First Embodiment) FIG. 1 is a plan view showing the configuration of the cleaning device 1 of the first embodiment.

[0010] Figure 1 shows the cleaning apparatus 1 installed within the semiconductor manufacturing system. Figure 1 shows the cleaning apparatus 1, the FOUP 2 placed on the cleaning apparatus 1, the hot water channel 3 within the semiconductor manufacturing system, and the cold water channel 4 within the semiconductor manufacturing system. Each substrate processed within the semiconductor manufacturing system is placed inside the FOUP 2 and transported by transporting the FOUP 2. Each substrate placed inside the FOUP 2 is, for example, a wafer. The FOUP 2 is an example of a container for storing substrates.

[0011] Cleaning device 1 is installed to clean FOUP2. When a substrate is processed using gas in a semiconductor manufacturing system and then placed in FOUP2, gas remaining on the substrate may be released from the substrate and adsorbed onto FOUP2. If this gas is corrosive, FOUP2, the contents stored in FOUP2, and various semiconductor manufacturing equipment in the semiconductor manufacturing system may be adversely affected by the gas. Examples of such corrosive gases include halogen gases (e.g., fluorine gas, chlorine gas) and ammonia gas used in dry etching.

[0012] Therefore, the cleaning device 1 removes gases adsorbed on the FOUP2 by washing it with water. For example, halogen gases and ammonia gases adsorbed on the FOUP2 are removed by dissolving in this water. At this time, dust and metal particles inside the FOUP2 are also removed by washing the FOUP2. The cleaning device 1 can wash the FOUP2 with hot water supplied from the hot water channel 3 or cold water supplied from the cold water channel 4. The water used to wash the FOUP2 is an example of a fluid used to wash a container.

[0013] FOUP2 is formed, for example, from a polymer. In this case, the gas mentioned above may permeate into the polymer forming FOUP2. The gas that has permeated into the polymer is difficult to remove even with washing with water, and over time it will seep out of the polymer. As a result, FOUP2 becomes contaminated by the seeped-out gas.

[0014] Gases impregnated within the polymer can be removed, for example, by vacuum heating of FOUP2. Specifically, the gases impregnated within the polymer are expelled from the polymer by vacuum heating of FOUP2. However, vacuum heating of FOUP2 may cause malfunctions in FOUP2, such as deformation due to the heat.

[0015] Therefore, the cleaning device 1 of this embodiment has the configuration described later. This makes it possible to suitably clean the FOUP2, and for example, gases impregnated into the polymer can also be removed by washing the FOUP2 with water.

[0016] The cleaning apparatus 1 of this embodiment comprises a plurality of load ports 11, a chamber 12, a heating unit 13, a cooling unit 14, and a control unit 15. The chamber 12 includes a transport robot 21, a transport rail 22, a hot water flow path 23, a cold water flow path 24, a plurality of cleaning units 25, and a plurality of drying units 26. The transport robot 21 comprises a transport arm 21a. The heating unit 13, the cooling unit 14, the hot water flow path 23, and the cold water flow path 24 are examples of temperature control units.

[0017] Figure 1 shows the X, Y, and Z directions perpendicular to each other. In this specification, the +Z direction is treated as the upward direction, and the -Z direction is treated as the downward direction. The -Z direction may or may not coincide with the direction of gravity.

[0018] The configuration of the cleaning device 1 of this embodiment will be described below with reference to Figure 1. Figure 2 will also be referred to as appropriate in this description. Figure 2 is a cross-sectional view showing the configuration of the cleaning device 1 of the first embodiment.

[0019] [Load port 11, Chamber 12] Each load port 11 is a location where a FOUP2 is placed. When cleaning a FOUP2, it is placed on one of the load ports 11, transported into the chamber 12, and cleaned in the chamber 12. After cleaning in the chamber 12, the FOUP2 is removed from the chamber 12, placed on one of the load ports 11, and reused in the semiconductor manufacturing system. Before cleaning the FOUP2, the substrate inside the FOUP2 is removed from the FOUP2.

[0020] Note that although the number of load ports 11 in the cleaning device 1 is 2 in Figure 1, there may be other numbers besides 2.

[0021] [Transport robot 21, transport rail 22] The transport robot 21 is a robot for transporting the FOUP 2. As shown in Figures 1 and 2, the transport robot 21 can transport the FOUP 2 between the load port 11, the washing section 25, and the drying section 26. During this process, the transport robot 21 can move along the transport rail 22 as needed. The transport robot 21 can transport the FOUP 2 by holding it with the transport arm 21a.

[0022] [Heating section 13, hot water flow path 23] The heating unit 13 draws in water (hot water) from the hot water channel 3 and heats the drawn-in water. The water heated by the heating unit 13 is supplied to each cleaning unit 25 via the hot water channel 23 and used as cleaning water for cleaning the FOUP 2.

[0023] The hot water channel 3 (hot water line) is a channel that circulates hot water used for various purposes within the semiconductor manufacturing system. The hot water channel 3 is formed, for example, by piping. The hot water flowing through the hot water channel 3 is, for example, pure water and is used for cleaning substrates. The temperature of the hot water flowing through the hot water channel 3 is set to, for example, 60-70°C, because if the temperature is too high, the cost becomes excessive.

[0024] The heating unit 13, for example, heats water (hot water) drawn in from the hot water channel 3 to 70°C or higher and supplies it to each cleaning unit 25. This makes it possible to supply water with a higher temperature than the water flowing through the hot water channel 3 to each cleaning unit 25, thereby improving the cleaning efficiency of the FOUP 2. Since the heating unit 13 generates water of 70°C or higher from water of 60-70°C, it is possible to increase the heating efficiency for generating high-temperature cleaning water compared to generating water of 70°C or higher from room temperature water. Since the hot water flowing through the hot water channel 3 is pure water, it is possible to generate cleaning water with clean water that has few particles. The heating unit 13 draws in the required amount of hot water flowing through the hot water channel 3 and generates cleaning water to supply to each cleaning unit 25. A temperature of 70°C or higher is an example of a first temperature. The water drawn in from the hot water channel 3 is an example of a first fluid.

[0025] In Figures 1 and 2, the heating unit 13 is positioned away from the chamber 12, but it may be positioned in contact with the chamber 12, or it may be positioned inside the chamber 12 instead of outside it. Furthermore, the heating unit 13 may be positioned above, below, or to the side of the chamber 12. However, in order to suppress the decrease in water temperature between the heating unit 13 and each cleaning unit 25, it is desirable to position the heating unit 13 close to each cleaning unit 25.

[0026] The hot water channel 23 is a channel for supplying water heated by the heating unit 13 to each washing unit 25. The hot water channel 23 may be part of the hot water channel 3, or it may be a separate channel from the hot water channel 3. The entire or a part of the hot water channel 23 is located inside the chamber 22.

[0027] [Cooling section 14, cold water flow path 24] The cooling unit 14 draws in water (cold water) from the cold water channel 4 and cools the drawn-in water. The water cooled by the cooling unit 14 is supplied to each cleaning unit 25 via the cold water channel 24 and used as cleaning water for cleaning the FOUP 2.

[0028] The chilled water channel 4 (chilled water line) is a channel for circulating chilled water used for various purposes within a semiconductor manufacturing system. The chilled water channel 4 is formed, for example, by piping. The chilled water flowing through the chilled water channel 4 is, for example, pure water and is used for cleaning substrates. The temperature of the chilled water flowing through the chilled water channel 4 can be room temperature, higher than room temperature, or lower than room temperature. The temperature of the chilled water flowing through the chilled water channel 4 is set to, for example, 10-20°C because if the temperature is too low, the cost becomes excessive.

[0029] The cooling unit 14 cools the water (chilled water) drawn in from the chilled water channel 4 to 10°C or below and supplies it to each cleaning unit 25. This makes it possible to supply water with a lower temperature than the water flowing through the chilled water channel 4 to each cleaning unit 25, thereby enabling efficient cooling of the FOUP 2. Since the chilled water flowing through the chilled water channel 4 is pure water, it is possible to generate cleaning water with clean water that has few particles. The cooling unit 14 draws in the required amount of chilled water flowing through the chilled water channel 4 and generates cleaning water to supply to each cleaning unit 25. The temperature of 10°C or below is an example of a second temperature. The water drawn in from the chilled water channel 4 is an example of a second fluid.

[0030] In Figures 1 and 2, the cooling unit 14 is positioned away from the chamber 12, but it may be positioned in contact with the chamber 12, or it may be positioned inside the chamber 12 instead of outside it. Furthermore, the cooling unit 14 may be positioned above, below, or to the side of the chamber 12. However, in order to suppress the rise in water temperature between the cooling unit 14 and each cleaning unit 25, it is desirable to position the cooling unit 14 close to each cleaning unit 25.

[0031] The chilled water passage 24 is a passage for supplying water cooled by the cooling unit 14 to each washing unit 25. The chilled water passage 24 may be part of the chilled water passage 4, or it may be a separate passage from the chilled water passage 4. The entire or partial chilled water passage 24 is located inside the chamber 22.

[0032] In this embodiment, the cleaning device 1 is equipped with both a heating unit 13 and a cooling unit 14, but it may be equipped with only one of them. For example, in this embodiment, the cleaning device 1 may be equipped with only one of the heating unit 13 and the cooling unit 14, as long as it is possible to make the temperature difference between the inner and outer surfaces of the FOUP 2 70°C or more. Also, if cold water of 10°C or lower flows through the cold water channel 4, the cold water channel 24 can simply supply this cold water to the cleaning unit 25, so the cooling unit 14 can be omitted. In this case, the heating unit 13, the hot water channel 23, and the cold water channel 24 function as a temperature control unit. Also, if hot water of 70°C or higher flows through the hot water channel 3, the hot water channel 23 can simply supply this hot water to the cleaning unit 25, so the heating unit 13 can be omitted. In this case, the cooling unit 14, the hot water channel 23, and the cold water channel 24 function as a temperature control unit. Furthermore, even if the cleaning device 1 of this embodiment can lower the temperature inside the polymer forming the FOUP2 to 70°C or below by alternately supplying hot water and cold water to the FOUP2, it may still be equipped with only one of the heating unit 13 and the cooling unit 14 as the temperature adjustment unit. In this case, a mechanism capable of supplying cold water and hot water with a temperature difference to the cleaning unit 25 functions as the temperature adjustment unit.

[0033] [Cleaning section 25] Each cleaning unit 25 cleans the FOUP 2 with cleaning water. For example, each cleaning unit 25 can clean the FOUP 2 while heating it by supplying water heated by the heating unit 13 to the FOUP 2. This makes it possible to expel gas impregnated into the polymer forming the FOUP 2 from the polymer. In addition, each cleaning unit 25 can clean the FOUP 2 while cooling it by supplying water cooled by the cooling unit 14 to the FOUP 2. This makes it possible to cool the FOUP 2, which has been heated by the water from the heating unit 13, with the water from the cooling unit 14. Further details of each cleaning unit 25 will be described later.

[0034] Although Figure 1 shows two cleaning units 25 in the cleaning device 1, there may be other numbers of cleaning units 25. Also, while the cleaning units 25 clean the FOUP 2 with water supplied from the heating unit 13 and cooling unit 14, the FOUP 2 may also be cleaned with other fluids (e.g., liquids) supplied from the heating unit 13 and cooling unit 14.

[0035] [Drying section 26] Each drying unit 26 dries the FOUP 2 that has been cleaned by the washing unit 25. In this embodiment, the FOUP 2 is brought into the chamber 12, cleaned in one of the washing units 25, then dried in one of the drying units 26, and then discharged from the chamber 12.

[0036] Note that while Figure 1 shows two drying units 26 in the cleaning device 1, there may be other numbers. Also, while Figure 2 shows the drying unit 26 positioned above the cleaning unit 25, it may be positioned to the side or below the cleaning unit 25.

[0037] [Control Unit 15] The control unit 15 controls various operations of the cleaning device 1. For example, the control unit 15 controls the heating operation of the heating unit 13, the cooling operation of the cooling unit 14, the transport operation of the transport robot 21, the cleaning operation of each cleaning unit 25, and the drying operation of each drying unit 26. The control unit 15 also controls the timing of heating and cooling of the FOUP 2 by each cleaning unit 25, specifically adjusting the relationship between the heating timing and the cooling timing. Further details of the control unit 15 will be described later.

[0038] Here, we will explain the heating and cooling of the FOUP2 by each cleaning unit 25.

[0039] The gas impregnated into the polymer forming the FOUP2 can be removed by heating the FOUP2. Therefore, each cleaning unit 25 in this embodiment heats and cleans the FOUP2 with water at 70°C or higher supplied from the heating unit 13. This makes it possible to expel the gas impregnated into the polymer and to wash away the expelled gas with cleaning water.

[0040] However, heating the FOUP2 with water from the heating unit 13 may cause problems with the FOUP2, such as deformation due to heat, similar to the case of vacuum heating of the FOUP2. For example, the FOUP2 in this embodiment will deform if its temperature exceeds 70°C. While using water at a high temperature of 70°C or above can efficiently remove gas impregnated into the polymer, the deformation of the FOUP2 is a problem.

[0041] Therefore, in this embodiment, when heating and cleaning the FOUP2 with water at 70°C or higher supplied from the heating unit 13, each cleaning unit 25 further cools and cleans the FOUP2 with water at 10°C or lower supplied from the cooling unit 14. This makes it possible to efficiently remove gas impregnated into the polymer while suppressing deformation of the FOUP2.

[0042] The temperature of the water from the heating unit 13 may be lower than 70°C, and the temperature of the water from the cooling unit 14 may be higher than 10°C. In this embodiment, the water supplied from the heating unit 13 is liquid water, but it may also be vaporized water. In this case, the heating unit 13 heats the liquid water drawn in from the hot water channel 3 to generate vaporized water, and each cleaning unit 25 supplies the vaporized water supplied from the heating unit 13 to the FOUP 2 to heat and clean the FOUP 2. That is, in this case, the heating unit 13 evaporates the hot water to generate vapor. On the other hand, the cooling unit 14 may supply a liquid other than water to each cleaning unit 25 instead of water or together with water, or it may supply a gas to each cleaning unit 25 instead of water or together with water. An example of the liquid is liquid nitrogen, and an example of the gas is nitrogen gas produced from liquid nitrogen. In this case, each cleaning unit 25 cools the FOUP2 by supplying gas supplied from the cooling unit 14 to the FOUP2. Further details of these examples will be described later.

[0043] Figures 3 and 4 are a plan view and a cross-sectional view, respectively, showing a first example of the configuration of the cleaning device 1 according to the first embodiment.

[0044] Figures 3 and 4 show one of the cleaning units 25 shown in Figure 1, or configurations related to this cleaning unit 25. This cleaning unit 25 includes a hot water nozzle 31, a cold water nozzle 32, a hot water nozzle 33, a cold water nozzle 34, and a drain pan 35. The hot water nozzle 31 and cold water nozzle 32 are examples of a first cleaning unit. The hot water nozzle 33 and cold water nozzle 34 are examples of a second cleaning unit.

[0045] The FOUP2 in this embodiment consists of a FOUP body 2a, which is the main body of the FOUP2, and a FOUP door 2b, which is the door (lid) of the FOUP2. The FOUP body 2a is an example of the first part. The FOUP door 2b is an example of the second part.

[0046] The hot water nozzle 31 heats and cleans the FOUP body 2a by discharging water supplied from the heating unit 13 onto the FOUP body 2a. The cold water nozzle 32 cools and cleans the FOUP body 2a by discharging water supplied from the cooling unit 14 onto the FOUP body 2a. In this embodiment, the hot water nozzle 31 discharges water onto the inner surface of the FOUP body 2a, and the cold water nozzle 32 discharges water onto the outer surface of the FOUP body 2a. Therefore, the FOUP body 2a is heated from its inner surface and cooled from its outer surface. The inner surface of the FOUP body 2a is an example of the first surface. The outer surface of the FOUP body 2a is an example of the second surface.

[0047] The hot water nozzle 33 heats and cleans the FOUP door 2b by discharging water supplied from the heating unit 13 onto the FOUP door 2b. The cold water nozzle 34 cools and cleans the FOUP door 2b by discharging water supplied from the cooling unit 14 onto the FOUP door 2b. In this embodiment, the hot water nozzle 33 discharges water onto the back surface of the FOUP door 2b, and the cold water nozzle 34 discharges water onto the front surface of the FOUP door 2b. Therefore, the FOUP door 2b is heated from its back side and cooled from its front side. The back surface of the FOUP door 2b is an example of the first surface. The front surface of the FOUP door 2b is an example of the second surface. The back surface of the FOUP door 2b corresponds to the inner surface of the FOUP door 2b, and the front surface of the FOUP door 2b corresponds to the outer surface of the FOUP door 2b.

[0048] Figures 3 and 4 further indicate the water discharged from the hot water nozzle 31, cold water nozzle 32, hot water nozzle 33, and cold water nozzle 34 with the symbol W. The water discharged from the hot water nozzle 31, cold water nozzle 32, hot water nozzle 33, and cold water nozzle 34 falls into the drain pan 35 and accumulates in the drain pan 35. The water accumulated in the drain pan 35 is then discharged outside the cleaning device 1.

[0049] When cleaning the FOUP2, the FOUP door 2b is removed from the FOUP body 2a in the cleaning unit 25. The FOUP body 2a is moved near the hot water nozzle 31 and the cold water nozzle 32, and the FOUP door 2b is moved near the hot water nozzle 33 and the cold water nozzle 34. In this way, the FOUP body 2a and the FOUP door 2b are cleaned at separate locations within the cleaning unit 25.

[0050] The FOUP body 2a is placed near the hot water nozzle 31 and the cold water nozzle 32 so that its bottom faces downwards and its opening faces upwards. In this state, water heated by the heating unit 13 is poured into the FOUP body 2a from the hot water nozzle 31. After that, it is left in this state for a certain period of time to dissolve the gas present on the inner surface of the FOUP body 2a. As a result, not only the gas adsorbed on the inner surface of the FOUP body 2a but also the gas impregnated into the polymer forming the FOUP body 2a can be removed from the FOUP body 2a. The gas impregnated into the polymer diffuses into the inner surface of the FOUP body 2a and dissolves in the water, thereby being removed from the FOUP body 2a. After that, the water accumulated inside the FOUP body 2a is discarded by changing the orientation of the FOUP body 2a.

[0051] The water accumulated inside the FOUP unit 2a can be discarded by turning the FOUP unit 2a upside down, or by inserting a nozzle into the FOUP unit 2a and sucking out the hot water. After discarding the hot water from the FOUP unit 2a, the FOUP unit 2a may be washed to remove any attached dust.

[0052] Figures 5 and 6 are a plan view and a cross-sectional view, respectively, showing a second example of the configuration of the cleaning device 1 according to the first embodiment.

[0053] Figures 5 and 6, like Figures 3 and 4, show one of the cleaning units 25 shown in Figure 1, or configurations related to this cleaning unit 25. This cleaning unit 25 is equipped with a hot water nozzle 31' instead of the hot water nozzle 31. The hot water nozzle 31' is an example of the first cleaning unit.

[0054] The capacity of FOUP2 in this embodiment is approximately 20L. Therefore, when water heated by the heating unit 13 is accumulated in the FOUP body 2a, it takes a long time for the water level inside the FOUP body 2a to rise. As a result, there is a large time difference between the time it takes for the water accumulated inside the FOUP body 2a to heat the area near the bottom of the FOUP body 2a and the time it takes for the water near the opening of the FOUP body 2a to heat the area near the opening. Therefore, there is a risk that the area near the opening of the FOUP body 2a may not be heated sufficiently.

[0055] Therefore, the cleaning unit 25 shown in Figures 5 and 6 pours water heated by the heating unit 13 into the FOUP body 2a in a shower-like manner from the hot water nozzle 31'. The hot water nozzle 31' has a showerhead-like structure, and the water from the hot water nozzle 31' is poured over the entire inner surface of the FOUP body 2a. As a result, the part of the FOUP body 2a near the opening is heated before it is exposed to the water accumulated inside the FOUP body 2a. This makes it possible to heat the entire inner surface of the FOUP body 2a uniformly.

[0056] Furthermore, this problem of uneven heating can also be addressed by increasing the flow rate of water discharged from the hot water nozzle 31 or hot water nozzle 31' to shorten the time difference mentioned above.

[0057] Here, we will explain the effects of hot water washing.

[0058] Generally, the solubility of gases in water is higher in hot water than in cold water. Therefore, in this embodiment, FOUP2 is washed using hot water. This makes it possible to efficiently remove gases adsorbed on the surface of FOUP2. However, since gases adsorbed on the surface of FOUP2 can also be removed with cold water, the effect of using hot water is not to enable the removal of gases that cannot be removed with cold water, but rather to efficiently remove gases that can be removed with cold water.

[0059] On the other hand, gas impregnated into the polymer forming FOUP2 cannot be removed by simply washing FOUP2 with water. This is because the diffusion of gas within the polymer is the rate-limiting factor. It is known that increasing the temperature of the polymer enlarges the pores in the polymer chains, accelerating gas diffusion. Therefore, washing FOUP2 with hot water heats the polymer, increasing its temperature and accelerating gas diffusion. This makes it possible to diffuse the gas impregnated into the polymer to the surface of FOUP2. According to this embodiment, by washing FOUP2 with hot water and diffusing the gas impregnated into the polymer to the surface of FOUP2, it is possible to remove the gas impregnated into the polymer.

[0060] Gases impregnated within the polymer can be removed, for example, by vacuum heating of FOUP2. However, vacuum heating makes it difficult to efficiently remove gases that have diffused onto the surface of FOUP2. On the other hand, according to this embodiment, by exposing the surface of FOUP2 to hot water, it becomes possible to dissolve the gases that have diffused onto the surface of FOUP2 in the hot water, thereby enabling efficient removal of the gases that have diffused onto the surface of FOUP2.

[0061] Figure 7 is a graph illustrating the cleaning of FOUP2 in the first embodiment.

[0062] The horizontal axis in Figure 7 represents the distance from the surface of FOUP2. The vertical axis in Figure 7 represents the gas concentration inside FOUP2. Figure 7 shows the gas concentration distribution before washing with hot water (contaminated state) and after washing with hot water at 60°C, 80°C, or 100°C.

[0063] In the distribution before cleaning, the gas concentration is highest on the surface of FOUP2, and decreases as you move away from the surface of FOUP2. On the other hand, in each distribution after cleaning, the gas is removed from the surface of FOUP2, so the gas concentration on the surface of FOUP2 is zero.

[0064] When the surface of FOUP2 is washed with hot water, the gas concentration on the surface of FOUP2 decreases, causing the gas inside FOUP2 to diffuse toward the surface. However, if the hot water temperature is below 70°C (for example, 60°C), the gas diffusion coefficient is small, so the gas concentration inside FOUP2 does not decrease much. On the other hand, if the hot water temperature is 70°C or higher (for example, 80°C or 100°C), the gas diffusion coefficient increases, causing a significant decrease in the gas concentration inside FOUP2. This is because a higher gas diffusion coefficient allows the gas inside FOUP2 to be efficiently removed from the surface of FOUP2. Thus, according to this embodiment, by increasing the temperature of the hot water used to wash FOUP2, it is possible to efficiently remove the gas inside FOUP2.

[0065] Furthermore, as can be seen from the comparison of the gas concentration distributions at 60°C, 80°C, and 100°C, the position of the peak in the gas concentration distribution after washing is further from the surface of the FOUP2 as the temperature of the hot water increases. Gas that enters the FOUP2 but diffuses to a position far from the surface of the FOUP2 can hardly escape from the FOUP2 at the temperature at which the FOUP2 is used (temperatures around room temperature). Therefore, since gas that diffuses to a position far from the surface of the FOUP2 rarely causes the problem of gas seeping out from the polymer, it does not pose a problem in the practical operation of the FOUP2.

[0066] Figure 8 is a schematic diagram illustrating the cleaning of FOUP2 in the first embodiment. Referring to Figure 8, the problems that arise when the cleaning water temperature is increased will be explained.

[0067] If the polymer is about 5 mm thick, heating the surface of the polymer will quickly heat up the entire polymer. Generally, polymers forming FOUP2 begin to decompose at temperatures above 130°C, and no compositional change occurs at around 80°C. However, it is known that even at around 80°C, polymers forming FOUP2 undergo thermal motion within the polymer frame, widening the internal gaps and making them softer.

[0068] Microscopically, the polymer returns to its original state when the temperature is lowered again. However, if the polymer forming FOUP2 is soft and force is applied to FOUP2, FOUP2 will deform. If the temperature of FOUP2 is lowered again while it is deformed, FOUP2 will remain deformed and will not return to its original shape.

[0069] FOUP2 has a complex shape, and the force applied to it by its own weight is not uniform. Furthermore, slight distortions remain in FOUP2 from the manufacturing and molding process. Therefore, if FOUP2 is heated and deformed, it is difficult for it to return to its original shape. Even a slight change in FOUP2's shape can alter the height at which the substrate is placed inside, potentially causing transport problems. For this reason, it is desirable to suppress even slight deformation of FOUP2.

[0070] Therefore, as shown in Figure 8, the cleaning unit 25 of this embodiment not only heats the inner surface Sa of the FOUP body 2a with hot water, but also cools the outer surface Sb of the FOUP body 2a with cold water. Similarly, the cleaning unit 25 of this embodiment not only heats the back surface of the FOUP door 2b with hot water, but also cools the surface of the FOUP door 2b with cold water.

[0071] As mentioned above, the polymer forming FOUP2 does not undergo compositional changes below 130°C. Therefore, when heating FOUP2 with water below 130°C, thermal deformation of FOUP2 can be suppressed as long as the entire FOUP2 is not heated. For this reason, the FOUP body 2a shown in Figure 8 is not only heated with hot water from the inner surface Sa side, but also cooled with cold water from the outer surface Sb side. This makes it possible to raise the temperature of the FOUP body 2a in the area near the inner surface Sa where the gas is present in high concentration, while keeping the temperature of other parts from becoming too high.

[0072] Figure 8 schematically shows the temperature gradient within the FOUP body 2a, indicated by a straight line L within the FOUP body 2a. In this embodiment, by simultaneously heating and cooling the FOUP body 2a, it is possible to create a temperature gradient within the FOUP body 2a as shown in Figure 8. This makes it possible to suppress the heating of the entire FOUP body 2a. The operation of the cleaning unit 25 to simultaneously heat and cool the FOUP body 2a is controlled by the control unit 15. The same applies when the cleaning unit 25 cleans the FOUP door 2b.

[0073] Regarding the polymer forming the FOUP2, the heat resistance temperature of the polymer when used repeatedly over a long period of time is, for example, about 70°C. Therefore, it is desirable that the temperature of the FOUP body 2a be 70°C or higher in the area near the inner surface Sa where the gas is present in high concentration, but below 70°C in other areas. In this embodiment, the thickness of the part where the temperature is 70°C or higher can be, for example, about 1 to 2 mm.

[0074] Figure 9 is another graph illustrating the cleaning of FOUP2 in the first embodiment.

[0075] Figure 9 shows the temperature gradient when the inner surface Sa of the FOUP body 2a is heated to 100°C, and the outer surface Sa of the FOUP body 2a is cooled to 5°C, -20°C, or -50°C. Line L1 shows the case when the inner surface Sa is 100°C and the outer surface Sa is 5°C. Line L2 shows the case when the inner surface Sa is 100°C and the outer surface Sa is -20°C. Line L3 shows the case when the inner surface Sa is 100°C and the outer surface Sa is -50°C. The horizontal axis of Figure 9 represents the distance from the inner surface Sa of the FOUP body 2a, and the vertical axis of Figure 9 represents the temperature inside the FOUP 2. In Figure 9, the thickness of the FOUP body 2a, i.e., the distance between the inner surface Sa and the outer surface Sb of the FOUP body 2a, is assumed to be 5 mm.

[0076] Furthermore, achieving an internal temperature of 100°C Sa can be achieved, for example, by using steam (water vapor) from the heating unit 13. Additionally, achieving an external temperature of -20°C or -50°C Sb can be achieved, for example, by discharging liquid nitrogen onto the external surface Sb, either in place of or along with cold water.

[0077] Figure 9 further shows the depth (distance from the inner surface Sa) at which the temperature inside the FOUP body 2a reaches 70°C for the cases of straight lines L1 to L3. In the case of straight line L1 (inner surface Sa: 100°C, outer surface Sb: 5°C), the temperature at a depth of 1.58 mm is 70°C. In the case of straight line L2 (inner surface Sa: 100°C, outer surface Sb: -20°C), the temperature at a depth of 1.25 mm is 70°C. In the case of straight line L3 (inner surface Sa: 100°C, outer surface Sb: -50°C), the temperature at a depth of 1 mm is 70°C. In these cases, a uniform temperature gradient can be achieved inside the 5 mm thick FOUP body 2a.

[0078] The depth of 1.58 mm in the case of a straight line L1 is approximately 1 / 3 of the thickness of the FOUP body 2a (5 mm). Verification results show that if the temperature of more than 2 / 3 of the FOUP body 2a is kept below 70°C, thermal deformation of the entire FOUP body 2a can be suppressed. Therefore, it is desirable to set the temperature of the water from the cooling unit 14 to 10°C or lower.

[0079] The portion of the FOUP body 2a that remains below 70°C can be further increased by lowering the temperature of the outer surface Sb to below zero. For example, if the temperature of the outer surface Sb is -20°C, approximately 3 / 4 of the FOUP body 2a will remain below 70°C. If the temperature of the outer surface Sb is -50°C, approximately 4 / 5 of the FOUP body 2a will remain below 70°C. Lowering the temperature of the outer surface Sb to below zero can be achieved, for example, by spraying liquid nitrogen onto the outer surface Sb. In this case, the liquid nitrogen sprayed from the liquid nitrogen spray may reach the outer surface Sb in liquid form, or it may change into nitrogen gas before reaching the outer surface Sb. Furthermore, when using liquid nitrogen, it is desirable to provide a mechanism in the cleaning section 25 to release the pressure inside the cleaning section 25 so that the pressure inside the cleaning section 25 does not rise too high due to the vaporization of liquid nitrogen.

[0080] When the cleaning unit 25 cleans the FOUP body 2a, it is desirable to heat and cool the FOUP body 2a so that the temperature difference between the inner surface Sa and the outer surface Sb of the FOUP body 2a is 70°C or more. The temperature difference between the inner surface Sa and the outer surface Sb is 95°C in the case of a straight line L1, 120°C in the case of a straight line L2, and 150°C in the case of a straight line L3. In these cases, it is possible to keep a sufficiently large portion of the FOUP body 2a below 70°C, for example, it is possible to keep more than 2 / 3 of the FOUP body 2a below 70°C. This makes it possible to suppress thermal deformation of the entire FOUP body 2a. The same applies when the cleaning unit 25 cleans the FOUP door 2b.

[0081] Figure 10 is another cross-sectional view showing a second example of the configuration of the cleaning device 1 of the first embodiment.

[0082] The cleaning unit 25 shown in Figure 10 includes, in addition to the components shown in Figure 6, a hot water nozzle 36 and a hot water flow path 37. The hot water nozzle 36 discharges hot water supplied from the hot water flow path 37 to the FOUP main body 2a. The hot water flow path 37 supplies hot water flowing through the hot water flow path 3 (Figure 1) to the hot water nozzle 36 without passing through the heating unit 13. In this embodiment, the hot water nozzle 36 discharges hot water in a shower-like manner.

[0083] Unlike the FOUP body 2a shown in Figure 6, the FOUP body 2a shown in Figure 10 is placed near the hot water nozzle 31 and cold water nozzle 32 such that the bottom of the FOUP body 2a faces upward and the opening of the FOUP body 2a faces downward. In the second example (Figures 5, 6, and 10), the cleaning unit 25 cleans the FOUP body 2a in the state shown in Figure 6, and then changes the orientation of the FOUP body 2a to the orientation shown in Figure 10.

[0084] Then, a hot water nozzle 36 is inserted into the FOUP body 2a, and the inner surface of the FOUP body 2a is cleaned with hot water from the hot water nozzle 36. This makes it possible to remove dust adhering to the inner surface of the FOUP body 2a. In Figure 10, since the opening of the FOUP body 2a faces downward, it is possible to prevent such dust from accumulating inside the FOUP body 2a along with the water. To effectively remove dust from the inner surface of the FOUP body 2a, the water pressure of the hot water discharged from the hot water nozzle 36 may be increased, or the flow rate of the hot water may be increased by mixing gas (for example, nitrogen gas) with the hot water discharged from the hot water nozzle 36. The dust removed from the inner surface of the FOUP body 2a falls into the drain pan 35 along with the water, and is then discharged outside the cleaning device 1 along with the water. In this embodiment, the FOUP door 2b is cleaned with hot water, so additional cleaning of the FOUP door 2b is not performed, but additional cleaning of the FOUP door 2b may be performed for the purpose of dust removal.

[0085] Furthermore, the hot water nozzle 36 and the hot water flow path 37 may be provided not only in the cleaning section 25 in the second example, but also in the cleaning section 25 in the first example (Figures 3 and 4). Also, the cold water nozzle 32, hot water nozzle 33, and cold water nozzle 34 in the first and second examples may discharge water in a non-shower manner, like the hot water nozzle 31, or in a shower manner, like the hot water nozzle 31'. However, since the water discharged from the cold water nozzle 32, hot water nozzle 33, and cold water nozzle 34 is not expected to accumulate inside the FOUP body 2a or the FOUP door 2b, it is desirable that the cold water nozzle 32, hot water nozzle 33, and cold water nozzle 34 discharge water in a shower manner, as shown in Figures 3 to 6.

[0086] As described above, the cleaning apparatus 1 of this embodiment includes a heating unit 13 that heats the water used to clean the FOUP 2, and a cleaning unit 25 that heats and cleans the FOUP 2 by supplying the water heated by the heating unit 13 to the FOUP 2. Therefore, according to this embodiment, it is possible to suitably clean the FOUP 2. For example, it is possible to remove not only gases adsorbed on the FOUP 2, but also gases impregnated into the FOUP 2. Furthermore, by heating the inner surface of the FOUP 2 while cooling the outer surface of the FOUP 2, it is possible to clean the FOUP 2 while suppressing deformation of the FOUP 2.

[0087] (Second Embodiment) Figures 11 and 12 are a plan view and a cross-sectional view, respectively, showing the configuration of the cleaning device 1 according to the second embodiment.

[0088] Figures 11 and 12, like Figures 3 and 4, show one of the cleaning units 25 shown in Figure 1, or configurations related to this cleaning unit 25. This cleaning unit 25 is equipped with a hot water nozzle 41 instead of the hot water nozzle 31. The hot water nozzle 41 heats and cleans the FOUP body 2a by supplying water heated by the heating unit 13 to the FOUP body 2a. The hot water nozzle 41 is an example of the first cleaning unit.

[0089] The FOUP body 2a shown in Figure 12 is placed near the hot water nozzle 41 and cold water nozzle 32, similar to the FOUP body 2a shown in Figure 10, with the bottom of the FOUP body 2a facing upwards and the opening of the FOUP body 2a facing downwards. However, while the hot water nozzle 36 shown in Figure 10 is used for dust removal, the hot water nozzle 41 shown in Figure 12 is used for both gas removal and dust removal. In this embodiment, by using the hot water nozzle 41, gas removal and dust removal can be performed simultaneously. In other words, the hot water nozzle 41 can perform the functions of the hot water nozzles 31 and 31' for gas removal and the functions of the hot water nozzle 36 for dust removal.

[0090] When cleaning the FOUP body 2a, the inner surface of the FOUP body 2a is cleaned with hot water from the hot water nozzle 41, and the outer surface of the FOUP body 2a is cleaned with cold water from the cold water nozzle 32. This makes it possible to clean the FOUP body 2a while heating and cooling it, as in the first embodiment. The hot water nozzle 41 is used while inserted into the FOUP body 2a, similar to the hot water nozzle 36. The hot water nozzle 41 in this embodiment discharges hot water in a shower-like manner.

[0091] In Figure 12, the opening of the FOUP body 2a faces downwards, which prevents water and dust from accumulating inside the FOUP body 2a. To effectively remove dust from the inner surface of the FOUP body 2a, the water pressure of the hot water discharged from the hot water nozzle 41 may be increased, or the flow velocity of the hot water may be increased by mixing a gas (e.g., nitrogen gas) with the hot water discharged from the hot water nozzle 41.

[0092] According to this embodiment, it is possible to remove dust simultaneously with gas removal, thereby shortening the time required for cleaning. Furthermore, according to this embodiment, it is not necessary to change the orientation of the FOUP body 2a, so the transport mechanism for the FOUP body 2a can be simplified.

[0093] In the first and second embodiments, the back surface of the FOUP door 2b is cooled with cold water. However, because the FOUP door 2b has a latch structure for fixing to the FOUP body 2a, it has a hollow structure, and cooling from the back surface of the FOUP door 2b is not as effective as cooling the FOUP body 2a. However, because the shape of the FOUP door 2b is planar and simple, the FOUP door 2b is less affected by the aforementioned self-weight and processing distortion than the FOUP body 2a. Therefore, the effect of deformation due to heating is smaller on the FOUP door 2b than on the FOUP body 2a. Thus, if the FOUP door 2b is formed under conditions where it does not deform even when heated to 70°C or higher, it is not necessary to cool the FOUP door 2b from the back surface.

[0094] (Third embodiment) Figure 13 is a cross-sectional view showing the configuration of the cleaning device 1 according to the third embodiment.

[0095] Figure 13, like Figures 3 and 4, shows one of the cleaning units 25 shown in Figure 1, or a configuration related to this cleaning unit 25. This cleaning unit 25 is equipped with nozzles 51 and 52 instead of hot water nozzles 31, cold water nozzles 32, hot water nozzles 33, and cold water nozzles 34. Furthermore, the cleaning device 1 of this embodiment is equipped with a flow path 53, a flow path 54, valves 55, 56, 57, and 58 instead of hot water flow path 23 and cold water flow path 24. Nozzle 51 is an example of a first cleaning unit. Nozzle 52 is an example of a second cleaning unit.

[0096] In the first or second embodiment, the cleaning unit 25 cleans the FOUP2 by simultaneously heating and cooling it. In contrast, the cleaning unit 25 in this embodiment cleans the FOUP2 by alternately heating and cooling it. This operation of the cleaning unit 25 alternately heating and cooling the FOUP2 is controlled by the control unit 15 (Figure 1).

[0097] The nozzle 51 cleans the FOUP body 2a by discharging water onto its inner surface. The nozzle 51 can discharge water heated by the heating unit 13 (hot water) or water cooled by the cooling unit 14 (cold water). When the nozzle 51 discharges hot water, the FOUP body 2a is cleaned while being heated. When the nozzle 51 discharges cold water, the FOUP body 2a is cleaned while being cooled. When cleaning the FOUP body 2a in this embodiment, the inner surface of the FOUP body 2a is cleaned with hot or cold water from the nozzle 51. This makes it possible to remove gas and dust simultaneously. The nozzle 51 is used while inserted into the FOUP body 2a. The nozzle 51 in this embodiment discharges hot or cold water in a shower-like manner.

[0098] The nozzle 52 cleans the FOUP door 2b by discharging water onto the back surface of the FOUP door 2b. The nozzle 52 can discharge water heated by the heating unit 13 (hot water) or water cooled by the cooling unit 14 (cold water). When the nozzle 52 discharges hot water, the FOUP door 2b is cleaned while being heated. When the nozzle 52 discharges cold water, the FOUP door 2b is cleaned while being cooled. In this embodiment, the nozzle 52 discharges hot or cold water in a shower-like manner.

[0099] The flow path 53 is a flow path for supplying water heated by the heating unit 13 and water cooled by the cooling unit 14 to the nozzle 51. As shown in Figure 13, the flow path 53 includes a hot water flow path with a valve 55, a cold water flow path with a valve 56, and a common flow path where these hot water and cold water flow paths merge. The hot water flow path, cold water flow path, and common flow path are connected to the heating unit 13, the cooling unit 14, and the nozzle 51, respectively. When hot water is discharged from the nozzle 51, valve 55 is opened and valve 56 is closed. When cold water is discharged from the nozzle 51, valve 55 is closed and valve 56 is opened. The opening and closing of valves 55 and 56 are controlled by the control unit 15 (Figure 1).

[0100] The flow path 54 is a flow path for supplying water heated by the heating unit 13 and water cooled by the cooling unit 14 to the nozzle 52. As shown in Figure 13, the flow path 54 includes a hot water flow path with a valve 57, a cold water flow path with a valve 58, and a common flow path where these hot water and cold water flow paths merge. The hot water flow path, cold water flow path, and common flow path are connected to the heating unit 13, the cooling unit 14, and the nozzle 52, respectively. When hot water is discharged from the nozzle 52, valve 57 is opened and valve 58 is closed. When cold water is discharged from the nozzle 52, valve 57 is closed and valve 58 is opened. The opening and closing of valves 57 and 58 are controlled by the control unit 15 (Figure 1).

[0101] Figure 14 is a graph illustrating the operation of the cleaning device 1 of the third embodiment.

[0102] The horizontal axis of Figure 14 represents the time (timing) for discharging hot or cold water from the nozzle 51. The vertical axis of Figure 14 represents the temperature at a depth of 1 mm from the surface of the FOUP body 2a.

[0103] The periods labeled "1st time," "2nd time," "3rd time," "4th time," and "5th time" in Figure 14 indicate the timing of hot water discharge from nozzle 51. On the other hand, the other periods shown in Figure 14 indicate the timing of cold water discharge from nozzle 51. Thus, nozzle 51 in this embodiment discharges hot water and cold water alternately. The same applies to nozzle 52 in this embodiment.

[0104] In Figure 14, at the end of each of the "1st," "2nd," "3rd," "4th," and "5th" periods, the temperature at a depth of 1 mm approaches 70°C, but does not reach 70°C. According to this embodiment, as in the case of the first embodiment (Figure 9), it is possible to keep a sufficiently large portion of the FOUP body 2a below 70°C.

[0105] According to this embodiment, the cleaning unit 25 can be miniaturized by reducing the number of nozzles for cleaning water and shortening the length of the flow path for cleaning water. On the other hand, according to the first or second embodiment, by simultaneously heating and cooling the FOUP2, the time required to clean the FOUP2 can be shortened compared to when heating and cooling the FOUP2 are performed alternately.

[0106] In the first to third embodiments, each cleaning unit 25 takes in hot water (water for heating) from the hot water channel 3 and cold water (water for cooling) from the cold water channel 4. However, the water for heating and the water for cooling may be taken in from the same channel. In this case, the heating unit 13 heats the water from this channel, and the cooling unit 14 cools the water from this channel.

[0107] (Fourth Embodiment) Figure 15 is a cross-sectional view showing the configuration of the cleaning device 1 according to the fourth embodiment.

[0108] Figure 15, like Figure 13, shows one of the cleaning units 25 shown in Figure 1, or a configuration related to this cleaning unit 25. The cleaning device 1 of this embodiment has a configuration similar to the cleaning device 1 of the third embodiment, but instead of the heating unit 13, the hot water flow path in the flow path 53, the hot water flow path in the flow path 54, the valve 55, and the valve 57, it is equipped with a current supply unit 61 and a current supply path 62.

[0109] In the third embodiment, the cleaning unit 25 heats and cleans the FOUP2 by discharging hot water to the FOUP2, and cools and cleans the FOUP2 by discharging cold water to the FOUP2. On the other hand, in this embodiment, the cleaning unit 25 heats the FOUP2 by irradiating it with infrared light, and cools and cleans the FOUP2 by discharging cold water to the FOUP2. Similar to the third embodiment, the cleaning unit 25 in this embodiment cleans the FOUP2 by alternately heating and cooling the FOUP2. This operation of the cleaning unit 25 alternately heating and cooling the FOUP2 is controlled by the control unit 15 (Figure 1).

[0110] In this embodiment, the nozzle 51 cleans the FOUP body 2a by discharging water onto the inner surface of the FOUP body 2a. In this embodiment, the nozzle 51 can clean the FOUP body 2a while cooling it by discharging water cooled by the cooling unit 14.

[0111] In this embodiment, the nozzle 52 cleans the FOUP door 2b by discharging water onto the back surface of the FOUP door 2b. In this embodiment, the nozzle 52 can clean the FOUP door 2b while cooling it by discharging water cooled by the cooling unit 14.

[0112] As will be described later, the cleaning unit 25 of this embodiment includes a heating resistor 65 provided near the nozzle 51 and a heating resistor 65 provided near the nozzle 52. The current supply unit 61 supplies current to these heating resistors 65. The current supply path 62 is a path for supplying the current supplied from the current supply unit 61 to these heating resistors 65. When the current supplied from the current supply path 62 flows through these heating resistors 65, infrared rays are generated from these heating resistors 65, and the infrared rays are irradiated onto the inner surface of the FOUP body 2a and the back surface of the FOUP door 2b. As a result, the FOUP body 2a and the FOUP door 2b are heated by the infrared rays. The current supply path 62 is, for example, a conductor for transmitting current. As shown in Figure 15, the current supply path 62 of this embodiment is provided along the flow path 53 and nozzle 51, and along the flow path 54 and nozzle 52.

[0113] In this embodiment, the flow path 53 supplies water cooled by the cooling unit 14 to the nozzle 51. When this water is discharged from the nozzle 51, the valve 56 is opened and the current supply from the current supply unit 61 is turned off. On the other hand, when the FOUP body 2a is heated, the valve 56 is closed and the current supply from the current supply unit 61 is turned on. The opening and closing of the valve 56 and the on / off switching of the current supply unit 61 are controlled by the control unit 15 (Figure 1).

[0114] In this embodiment, the flow path 54 supplies water cooled by the cooling unit 14 to the nozzle 52. When this water is discharged from the nozzle 52, the valve 58 is opened and the current supply from the current supply unit 61 is turned off. On the other hand, when the FOUP door 2b is heated, the valve 58 is closed and the current supply from the current supply unit 61 is turned on. The opening and closing of the valve 58 and the on / off switching of the current supply unit 61 are controlled by the control unit 15 (Figure 1).

[0115] Figure 16 is another cross-sectional view showing the configuration of the cleaning device 1 according to the fourth embodiment.

[0116] Figure 16 shows the same cleaning unit 25 as shown in Figure 15. Figure 16 shows infrared light being irradiated onto the FOUP body 2a and FOUP 2b. On the other hand, Figure 15 shows water being discharged from nozzles 51 and 52 onto the FOUP body 2a and FOUP 2b.

[0117] Figures 17 and 18 are a perspective view and an enlarged view, respectively, showing the configuration of the nozzle 51 of the fourth embodiment. The enlarged view of Figure 18 includes a cross-sectional view showing the XZ cross-section of the nozzle 51 and a side view showing the -X side of the nozzle 51.

[0118] As shown in Figures 17 and 18, the nozzle 51 of this embodiment includes an internal space 63, a flow path forming member 64, the aforementioned plurality of heating resistors 65, and a glass material 66. In Figure 17, the internal space 63 is shown with dot hatching to make its location easier to see.

[0119] Water flowing from the channel 52 into the nozzle 51 accumulates in the internal space 63. The internal space 63 is formed by a channel forming member 64, as shown in Figure 18. The channel forming member 64 generally has an outer surface consisting of six rectangles and an inner surface consisting of six rectangles, and the inner surface of the channel forming member 64 forms the internal space 63.

[0120] Figure 17 shows a plurality of holes 64a provided on the outer surface of the flow path forming member 64 and a plurality of holes 64b provided on the inner surface of the flow path forming member 64. Figure 18 shows a plurality of flow paths 64c connecting these holes 64a and 64b to each other. These flow paths 64c penetrate the flow path forming member 64. Note that in Figure 17, some of the holes 64a are omitted from the illustration for clarity.

[0121] The water accumulated in the internal space 63 passes through these channels 64c and is discharged to the FOUP body 2a. In this way, a shower-like nozzle 51 is realized. As shown in Figure 18, these channels 64c extend in different directions from each other. This makes it possible to clean the inner surface of the FOUP body 2a in a way that suppresses the occurrence of uncleaned areas.

[0122] Each heating resistor 65 is positioned on the outer surface of the flow path forming member 64, avoiding the location of the hole 64b. Each heating resistor 65 is electrically connected to the current supply path 62 (Figures 16 and 17) described above. Each heating resistor 65 can generate infrared radiation when supplied with current from the current supply path 62. As a result, infrared radiation is irradiated onto the inner surface of the FOUP body 2a, and the FOUP body 2a is heated.

[0123] The glass material 66 covers the outer surface of the flow channel forming member 64 and the outer surface of each heating resistor 65. This prevents each heating resistor 65 from coming into contact with water. Infrared rays generated from each heating resistor 65 pass through the glass material 66 and are irradiated onto the FOUP body 2a. On the other hand, the glass material 66 has holes at the positions of the holes 64b in the flow channel forming member 64, and water from the holes 64b in the flow channel forming member 64 passes through the holes in the glass material 66.

[0124] Furthermore, the nozzle 52 in this embodiment has the same configuration as the nozzle 51 shown in Figures 17 and 18.

[0125] Figure 19 is a graph illustrating the operation of the cleaning device 1 according to the fourth embodiment.

[0126] Figure 19 shows the time (timing) for discharging cold water from the nozzle 51 and generating infrared rays from the heating resistor 65. As shown in Figure 19, the cleaning unit 25 of this embodiment alternately cools the FOUP body 2a with cold water and heats the FOUP body 2a with infrared rays. The same applies to the FOUP door 2b of this embodiment.

[0127] The polymer forming FOUP2 is, for example, polycarbonate. In this case, the polymer has a strong absorption band at wavelengths of 6-10 μm, so the infrared radiation irradiated onto FOUP2 is absorbed near its surface. As a result, FOUP2 is heated. However, it is desirable that the surface temperature of FOUP2 not exceed the temperature at which the polymer begins to dissolve and decompose (approximately 130°C), even for a short time. Therefore, it is necessary to control the infrared irradiation energy and irradiation time to appropriate values.

[0128] If water is discharged during infrared irradiation, the water absorbs the infrared rays, making it impossible to efficiently heat FOUP2. Therefore, in this embodiment, infrared irradiation is performed when water is not being discharged (see Figure 19). In this embodiment, water is discharged onto FOUP2 after infrared irradiation in order to dissolve and remove gas that has seeped out onto the surface of FOUP2. At this time, in order to lower the temperature near the surface of FOUP2 by one degree, cold water is discharged onto FOUP2 in this embodiment. Since gas in the polymer does not come to the surface even if the water washing time is extended, and gas on the surface cannot be removed even if the infrared irradiation time is extended, it is desirable to alternate between water washing and infrared irradiation for short periods of time.

[0129] According to this embodiment, the heating unit 13 is not required, which simplifies the configuration of the cleaning device 1 and makes it possible to miniaturize the cleaning device 1.

[0130] Furthermore, the heating resistor 65 in this embodiment is provided on the nozzle 51. This integrates the nozzle 51, which is the mechanism for discharging water, and the heating resistor 65, which is the mechanism for generating infrared rays. This makes it possible to avoid the water discharging mechanism interfering with infrared irradiation, or the infrared emitting mechanism interfering with water discharging. Moreover, these mechanisms can be easily moved together.

[0131] (Fifth embodiment) Figure 20 is a plan view showing the configuration of the semiconductor manufacturing system according to the fifth embodiment.

[0132] The semiconductor manufacturing system of this embodiment comprises a cleaning device 1 according to any of the first to fourth embodiments, transport paths 71 to 74, a plurality of semiconductor manufacturing devices 75, and a substrate handling unit 76. Figure 20 further shows a plurality of FOUPs 2 being transported along the transport paths 71 to 74. The arrows shown in Figure 20 indicate the transport direction of the FOUPs 2.

[0133] Transport path 71 is the track used when transporting substrates by FOUP2. Transport path 72 is the track used when cleaning FOUP2. Therefore, transport path 71 is located close to the semiconductor manufacturing equipment 75, and transport path 72 is located close to the cleaning equipment 1. When processing substrates within FOUP2, FOUP2 on transport path 71 is placed on one of the semiconductor manufacturing equipment 75. On the other hand, when cleaning FOUP2, FOUP2 on transport path 72 is placed on the cleaning equipment 1.

[0134] The board handling unit 76 places boards into the FOUP2 and removes boards from the FOUP2. For example, when the FOUP2 moves from the transport path 71 to the transport path 72 via the transport path 73, all boards are removed from the FOUP2. On the other hand, when the FOUP2 moves from the transport path 72 to the transport path 71 via the transport path 74, one or more boards are placed into the FOUP2.

[0135] The semiconductor manufacturing system of this embodiment can manufacture semiconductor devices from substrates transported by FOUP2. The semiconductor devices of this embodiment may be processed only within the semiconductor manufacturing system shown in Figure 20, or they may be processed within the semiconductor manufacturing system shown in Figure 20 and other semiconductor manufacturing systems.

[0136] Figure 20 illustrates several semiconductor manufacturing equipment 75, indicated by symbols A to K. These semiconductor manufacturing equipment 75 include, for example, CVD (Chemical Etching Deposition) equipment, sputtering equipment, dry etching equipment, annealing equipment, CMP (Chemical Mechanical Polishing) equipment, ion implantation equipment, substrate cleaning and drying equipment, and the like.

[0137] Figure 21 is a cross-sectional view showing a first example of the configuration of the semiconductor manufacturing apparatus 75 according to the fifth embodiment.

[0138] The semiconductor manufacturing apparatus 75 shown in Figure 21 is a dry etching apparatus and comprises a chamber 81, a substrate holder 82, and an ion source 83. The substrate holder 82 holds the substrate 77 housed in the chamber 81. The ion source 83 performs dry etching of the substrate 77 by irradiating it with ions. When the dry-etched substrate 77 is placed in the FOUP2, the FOUP2 is easily contaminated by gases such as fluorine gas or chlorine gas.

[0139] Figure 22 is a cross-sectional view showing a second example of the configuration of the semiconductor manufacturing apparatus 75 according to the fifth embodiment.

[0140] The semiconductor manufacturing apparatus 75 shown in Figure 22 is a sputtering apparatus and comprises a chamber 91, a substrate holder 92, and a target holder 93. The chamber 91 is equipped with an air inlet 91a for supplying sputtering gas and an exhaust port 91b for discharging unwanted gas. The substrate holder 92 holds the substrate 77 housed in the chamber 91. The target holder 93 holds a target 78 for sputtering the substrate 77. Since sputtering is desirable to be performed on a clean substrate 77, it is also desirable that the FOUP2 housing the substrate 77 before sputtering is clean.

[0141] Figure 23 is a flowchart illustrating the operation of the semiconductor manufacturing system according to the fifth embodiment.

[0142] Figure 23 shows a flow in which a substrate 77 in a certain FOUP2 is processed by one semiconductor manufacturing apparatus 75, and then the substrate 77 in that FOUP2 is processed by another semiconductor manufacturing apparatus 75. In Figure 23, the former apparatus is referred to as semiconductor manufacturing apparatus 75 indicated by symbol A (hereinafter referred to as "semiconductor manufacturing apparatus A"), and the latter apparatus is referred to as semiconductor manufacturing apparatus 75 indicated by symbol B (hereinafter referred to as "semiconductor manufacturing apparatus B"). Semiconductor manufacturing apparatus A is an example of a first semiconductor manufacturing apparatus, and semiconductor manufacturing apparatus B is an example of a second semiconductor manufacturing apparatus.

[0143] In this case, it may be desirable to clean FOUP2 between processing in semiconductor manufacturing equipment A and processing in semiconductor manufacturing equipment B. For example, if semiconductor manufacturing equipment A is a dry etching system and semiconductor manufacturing equipment B is a sputtering system, FOUP2 is likely to be contaminated after processing in semiconductor manufacturing equipment A, even though it is desirable for FOUP2 to be clean before processing in semiconductor manufacturing equipment B. Figure 23 shows a flow chart to address such contamination.

[0144] First, the substrate 77 is processed in semiconductor manufacturing equipment A (step S1), then the substrate 77 is removed from semiconductor manufacturing equipment A and stored in FOUP2 (step S2). The substrate 77 stored in step S2 is an example of the first substrate. Next, this FOUP2 is transported to the substrate handling unit 76, where the substrate 77 is removed from the FOUP2 (step S3). Next, this FOUP2 is cleaned by the cleaning device 1 (step S4).

[0145] Next, the FOUP2 is transported to the substrate handling unit 76, where the substrate handling unit 76 places the substrate 77 inside the FOUP2 (step S5). The substrate 77 placed inside in step S5 may be the same as the substrate 77 removed in step S3, or it may be a different substrate from the substrate 77 removed in step S3. The substrate 77 placed inside in step S5 is an example of a second substrate. Next, the FOUP2 is moved near the semiconductor manufacturing equipment B, the substrate 77 is removed from the FOUP2, and the removed substrate 77 is brought into the semiconductor manufacturing equipment B (step S6). Next, the substrate 77 is processed inside the semiconductor manufacturing equipment B (step S7).

[0146] According to this embodiment, even when semiconductor manufacturing equipment 75 that is prone to contaminating FOUP2 is present in the semiconductor manufacturing system, it is possible to keep FOUP2 clean.

[0147] (Sixth Embodiment) Figure 24 is a three-view drawing showing the structure of FOUP2 in the sixth embodiment.

[0148] Figures 24(a), 24(b), and 24(c) show one side view, another side view, and the top view of the same FOUP2, respectively. The FOUP2 in this embodiment is the target of cleaning in any of the first to fifth embodiments.

[0149] As described above, the FOUP2 of this embodiment includes a FOUP body 2a and a FOUP door 2b. Furthermore, as shown in Figures 24(a) to 24(c), the FOUP body 2a of this embodiment includes two handles 101, two handles 102, a gripping portion 103, and a base portion 104. Figures 24(a) to 24(c) further show a shaft 201 extending from the OHT and a gripping portion 202 provided at the tip of the shaft 201.

[0150] Handle 101 is provided for the conveying device to lift FOUP2. Handle 102 is provided for a person to hold FOUP2 by hand. Gripping part 103 is the part that the gripping part 202 grasps. The shaft 201 can move FOUP2 vertically and horizontally by gripping the gripping part 103 with the gripping part 202. The base part 104 forms the base of the FOUP body 2a.

[0151] The FOUP2 shown in Figures 24(a) to 24(c) is placed on the load port 11. When placing the FOUP2 on the load port 11, the FOUP2 is placed so that the gripping portion 103 faces upward. This is because the gripping portion 202 needs to grip the gripping portion 103.

[0152] Figure 25 is another three-view drawing showing the structure of FOUP2 in the sixth embodiment.

[0153] Figures 25(a), 25(b), and 25(c) show one side, another side, and the top of the same FOUP2, respectively. The FOUP2 shown in Figures 25(a) to 25(c) is placed on multiple stands P of the cleaning unit 25. Specifically, Figures 25(a) to 25(c) show the FOUP body 2a with the FOUP door 2b removed.

[0154] The FOUP body 2a shown in Figures 25(a) to 25(c) is mounted with its bottom facing downwards and its opening facing upwards, similar to the FOUP body 2a shown in Figures 4 and 6. This allows hot water to be stored inside the FOUP body 2a for cleaning (gas removal).

[0155] In this embodiment, the cleaning device 1 transports the FOUP 2, which is placed on the load port 11, into the chamber 12 using a transport robot 21 (Figure 1). The transport robot 21 further rotates the FOUP 2 by 90 degrees around the horizontal axis, changing the orientation of the FOUP 2 from the orientation shown in Figures 24(a) to 24(c) to the orientation shown in Figures 25(a) to 25(c). In this case, the transport robot 21 changes the orientation of the FOUP 2 by grasping the FOUP 2 with the gripping part 103 and manipulating it. Note that the operation to change the orientation of the FOUP 2 may be performed before removing the FOUP door 2b from the FOUP body 2a, or after removing the FOUP door 2b from the FOUP body 2a.

[0156] In this embodiment, it is desirable that the base P has a shape that does not easily hinder cleaning when cleaning the outer surface of the FOUP body 2a. For example, if the shape of the base P in a plan view is close to a point, and the FOUP body 2a is supported by the base P with point contact, the contact area between the base P and the FOUP body 2a will be small, and the base P will not easily hinder cleaning. Alternatively, the shape of the base P in a plan view may be close to a line, and the FOUP body 2a may be supported by the base P with line contact.

[0157] Figure 26 is another three-view drawing showing the structure of FOUP2 in the sixth embodiment.

[0158] Figures 26(a), 26(b), and 26(c) show one side, another side, and the top of the same FOUP2, respectively. The FOUP2 shown in Figures 26(a) to 26(c) is also placed on multiple stands P of the cleaning unit 25. Figures 26(a) to 26(c) also show the FOUP body 2a with the FOUP door 2b removed.

[0159] The FOUP body 2a shown in Figures 26(a) to 26(c) is placed with its bottom facing upwards and its opening facing downwards, similar to the FOUP body 2a shown in Figure 10. This makes it possible to remove dust adhering to the inner surface of the FOUP body 2a by cleaning (dust removal). The state shown in Figures 26(a) to 26(c) is also used when performing the cleaning described in the second to fourth embodiments, i.e., cleaning that combines gas removal and dust removal.

[0160] The operation of rotating FOUP2 in the orientation shown in Figures 26(a) to 26(c) is performed by the transport robot 21 as described above. Furthermore, the shape and number of platforms P shown in Figures 26(a) to 26(c) may be the same as the shape and number of platforms P shown in Figures 25(a) to 25(c), or they may be different from the shape and number of platforms P shown in Figures 25(a) to 25(c).

[0161] Although several embodiments have been described above, these embodiments are presented only as examples and are not intended to limit the scope of the invention. The novel apparatus and methods described herein can be implemented in a variety of other forms. Furthermore, various omissions, substitutions, and modifications can be made to the embodiments of the apparatus and methods described herein, without departing from the spirit of the invention. The appended claims and equivalents are intended to include such forms and modifications that are included in the scope and spirit of the invention. [Explanation of symbols]

[0162] 1: Washing device, 2: FOUP, 2a: FOUP main unit, 2b: FOUP door, 3: Hot water channel, 4: Cold water channel, 11: Load port, 12: Chamber, 13: Heating unit, 14: Cooling unit, 15: Control unit, 21: Transport robot, 21a: Transport arm, 22: Transport rail, 23: Hot water channel, 24: Cold water channel, 25: Washing section, 26: Drying section, 31: Hot water nozzle, 31': Hot water nozzle, 32: Cold water nozzle, 33: Hot water nozzle, 34: Cold water nozzle, 35: Drain pan, 36: Hot water nozzle, 37: Hot water channel, 41: Hot water nozzle, 51: Nozzle, 52: Nozzle, 53: Flow path, 54: Flow path, 55: Valve, 56: Valve, 57: Valve, 58: Valve, 61: Current supply unit, 62: Current supply path, 63: Internal space, 64: Flow path forming member, 64a: Hole, 64b: Hole, 64c: Flow channel, 65: Heating resistor, 66: Glass material, 71: Transport path, 72: Transport path, 73: Transport path, 74: Transport path, 75: Semiconductor manufacturing equipment, 76: Substrate handling section, 77: Substrate, 78: Target, 81: Chamber, 82: Substrate holder, 83: Ion source, 91: Chamber, 91a: Air intake, 91b: Exhaust port, 92: PCB holder, 93: Target holder, 101: Handle, 102: Handle, 103: Grip part, 104: Underlay part, 201: Shaft, 202: Gripping part

Claims

1. A temperature control unit that supplies a first fluid having a first temperature and a second fluid having a second temperature lower than the first temperature by heating a first fluid for cleaning a container for housing a substrate and / or cooling a second fluid for cleaning the container, A cleaning unit that heats and cleans the container by supplying the first fluid supplied from the temperature control unit to the first surface of the container, and cools and cleans the container by supplying the second fluid supplied from the temperature control unit to the second surface of the container, Equipped with, A cleaning apparatus in which the temperature difference between the first temperature and the second temperature is 70°C or more.

2. The cleaning apparatus according to claim 1, wherein the first temperature is 70°C or higher.

3. The first fluid before being heated by the temperature control unit is liquid water. The first fluid, after being heated by the temperature control unit, is water in liquid or vapor form. The cleaning apparatus according to claim 1, wherein the cleaning unit heats and cleans the container by supplying liquid or vaporized water supplied from the temperature control unit to the first surface.

4. The cleaning apparatus according to claim 1, wherein the second temperature is 10°C or lower.

5. The temperature control unit supplies a gas to cool the container, The cleaning apparatus according to claim 1, wherein the temperature adjustment unit cools the container by supplying the gas supplied from the temperature adjustment unit to the second surface.

6. The temperature control unit supplies a liquid other than water to cool the container. The cleaning apparatus according to claim 1, wherein the temperature adjustment unit cools the container by supplying the liquid supplied from the temperature adjustment unit to the second surface.

7. The cleaning apparatus according to claim 1, wherein the first surface is the inner surface of the container, and the second surface is the outer surface of the container.

8. The cleaning apparatus according to claim 1, wherein the cleaning unit heats and cools the container such that the temperature difference between the first surface and the second surface is 70°C or more.

9. The cleaning apparatus according to claim 1, wherein the cleaning unit heats and cleans the container by accumulating the first fluid in the container or by pouring the first fluid into the container in a shower-like manner.

10. The cleaning apparatus according to claim 1, further comprising a control unit for controlling the heating and cooling of the container performed by the cleaning unit.

11. The cleaning apparatus according to claim 10, wherein the control unit controls the cleaning unit to simultaneously heat and cool the container.

12. The cleaning apparatus according to claim 1, wherein the cleaning unit includes a first cleaning unit for cleaning a first portion of the container and a second cleaning unit for cleaning a second portion of the container.

13. The washing device according to claim 12, wherein the first part is the body of the container and the second part is the lid of the container.

14. The cleaning apparatus according to claim 12, wherein the first cleaning unit cleans the first portion with the bottom of the first portion facing downwards.

15. The cleaning apparatus according to claim 12, wherein the first cleaning unit cleans the first portion with the bottom of the first portion facing upward.

16. A temperature adjustment unit that can adjust the temperature of a fluid used to clean a container for housing a circuit board to a first temperature and a second temperature lower than the first temperature by heating and / or cooling the fluid, A cleaning unit that heats and cleans the container by supplying the fluid, which has been adjusted to the first temperature by the temperature adjustment unit, to the first surface of the container, and cools and cleans the container by supplying the fluid, which has been adjusted to the second temperature by the temperature adjustment unit, to the first surface of the container, A control unit that controls the heating and cooling of the container performed by the cleaning unit, comprising: a control unit that controls the cleaning unit to alternately heat and cool the container; A cleaning device equipped with the following features.

17. The first substrate is removed from the first semiconductor manufacturing apparatus and placed in a container for substrate storage. Remove the first substrate from the container, The first fluid for cleaning the container is heated by the temperature control unit, and / or the second fluid for cleaning the container is cooled by the temperature control unit, thereby supplying the first fluid having a first temperature and the second fluid having a second temperature lower than the first temperature. After removing the first substrate, the first fluid supplied from the temperature control unit is supplied to the first surface of the container by the cleaning unit to heat and clean the container, and the second fluid supplied from the temperature control unit is supplied to the second surface of the container by the cleaning unit to cool and clean the container. After cleaning the container, a second substrate, which is the same as or different from the first substrate, is placed inside the container. The second substrate is removed from the container and transported into the second semiconductor manufacturing apparatus. This includes, The cleaning unit is a method for manufacturing a semiconductor device, which simultaneously heats and cools the container.

18. The first substrate is removed from the first semiconductor manufacturing apparatus and placed in a container for substrate storage. Remove the first substrate from the container, The temperature of the fluid used to clean the container is adjusted to a first temperature and a second temperature lower than the first temperature by heating and / or cooling the fluid using a temperature control unit. After removing the first substrate, the container is heated and cleaned by supplying the fluid, which has been adjusted to the first temperature by the temperature adjustment unit, to the first surface of the container by the cleaning unit, and the container is cooled and cleaned by supplying the fluid, which has been adjusted to the second temperature by the temperature adjustment unit, to the first surface of the container by the cleaning unit. After cleaning the container, a second substrate, which is the same as or different from the first substrate, is placed inside the container. The second substrate is removed from the container and transported into the second semiconductor manufacturing apparatus. This includes, The cleaning unit is a method for manufacturing a semiconductor device, which alternately heats and cools the container.

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