Control device, control method, and wafer manufacturing system

Abstract

To provide a management device, a management method, and a wafer manufacturing system that can improve a wafer processing yield.SOLUTION: A management device 20 includes a control unit 22 that manages a plurality of wafer processing devices 1. The control unit 22 determines a wafer processing device 1 to be assigned to process a predetermined type of a wafer from among the plurality of wafer processing devices 1 on the basis of a distance between post-processing characteristics of the wafer processed by each of the wafer processing devices 1 and a central value of a standard of the wafer of the predetermined type.SELECTED DRAWING: Figure 1

Description

Technical Field

[0006]

[0001] The present disclosure relates to a management device for managing a wafer processing device, a management method, and a wafer manufacturing system including the wafer processing device.

Background Art

[0002] Conventionally, a double-sided polishing method for a wafer that can suppress variations in the GBIR value of the wafer after polishing between batches in a semiconductor wafer polishing device is known (see, for example, Patent Document 1).

Prior Art Documents

Patent Documents

[0007] According to the control device, control method, and wafer manufacturing system described herein, the wafer processing yield can be improved. [Brief explanation of the drawing]

[0008] [Figure 1] This is a block diagram showing an example configuration of a wafer manufacturing system according to one embodiment of the present disclosure. [Figure 2] This is a top view of a wafer double-sided polishing apparatus, which is a wafer processing apparatus according to one embodiment of the present disclosure. [Figure 3] This is a cross-sectional view of AA in Figure 2. [Figure 4] This figure shows an example of the relationship between the wafer surface shape, the amount of unevenness, and the flatness of the outer edge. [Figure 5] This graph shows an example of the post-processing characteristics of a wafer processing machine. [Figure 6] This graph shows an example of the relationship between the post-processing characteristics and specifications of wafers processed by a wafer processing machine. [Figure 7] This is an example of a map showing the allocation of wafer processing equipment. [Figure 8] This flowchart shows an example of a procedure for a management method according to one embodiment of this disclosure. [Modes for carrying out the invention]

[0009] Hereinafter, a wafer manufacturing system 100 according to one embodiment of the present disclosure will be described with reference to the drawings. As shown in Figure 1, the wafer manufacturing system 100 comprises a wafer processing apparatus 1 and a control device 20. The control device 20 manages the wafer processing apparatus 1. The control device 20 may assign processing steps to be performed on the wafer processing apparatus 1. The control device 20 may determine the processing conditions in the wafer processing apparatus 1.

[0010] In this embodiment, the wafer processing apparatus 1 is described as a wafer double-sided polishing apparatus. The wafer processing apparatus 1 is not limited to a polishing apparatus, but may be other processing apparatus such as a wire saw apparatus.

[0011] (Example of wafer processing apparatus 1 configuration) Figure 2 is a top view of a wafer processing apparatus 1 according to one embodiment of the present disclosure. Figure 3 is a cross-sectional view AA in Figure 2. As shown in Figures 2 and 3, the wafer processing apparatus 1 comprises a rotary platen 4 having an upper platen 2 and a lower platen 3 opposite to it, a sun gear 5 provided at the rotation center of the rotary platen 4, and an internal gear 6 provided in an annular shape on the outer circumference of the rotary platen 4. As shown in Figure 3, polishing pads 7 are attached to the opposing surfaces of the upper and lower rotary platens 4, that is, the lower side which is the polishing surface of the upper platen 2 and the upper side which is the polishing surface of the lower platen 3.

[0012] The wafer processing apparatus 1 is provided between the upper platen 2 and the lower platen 3 and includes a plurality of carrier plates 9, each having one or more holes 8 for holding the workpiece W (wafer) to be processed. Note that in Figure 2, only one of the plurality of carrier plates 9 is shown. The number of holes 8 may be one or more, for example, three. The workpiece W may be held in the holes 8.

[0013] The wafer processing apparatus 1 is a planetary gear type double-sided polishing apparatus that can cause the carrier plate 9 to undergo planetary motion including orbital motion and rotational motion by rotating the sun gear 5 and the internal gear 6. The wafer processing apparatus 1 can simultaneously polish both sides of the workpiece W by supplying polishing slurry and causing the carrier plate 9 to undergo planetary motion, while simultaneously rotating the upper platen 2 and the lower platen 3 relative to the carrier plate 9, thereby sliding the polishing pads 7 attached to the upper and lower rotating platens 4 against both sides of the workpiece W held in the holes 8 of the carrier plate 9.

[0014] In the wafer processing apparatus 1 according to the present embodiment, the upper platen 2 has one or more holes 10 penetrating from the upper surface to the lower surface which is the polishing surface of the upper platen 2. That is, the holes 10 are provided in the upper platen 2. One hole 10 is arranged at a position passing near the center of the workpiece W. The number of holes 10 is not limited to one and may be two or more. The holes 10 are not limited to the upper platen 2 and may be provided in the lower platen 3. One or more holes 10 may be provided in at least one of the upper platen 2 and the lower platen 3. Further, a plurality of holes 10 may be arranged on the circumference of the upper platen 2 (on the dashed line in FIG. 2). Further, as shown in FIG. 3, the holes 10 may penetrate up to the polishing pad 7 attached to the upper platen 2. That is, the holes 10 may penetrate from the upper surface of the upper platen 2 to the lower surface of the polishing pad 7.

[0015] The wafer processing apparatus 1 may be configured such that during double-sided polishing of the workpiece W, the thickness of the workpiece W can be measured in real time from one or more holes 10. Specifically, the wafer processing apparatus 1 may include a workpiece thickness measuring device 11 at a position corresponding to the holes 10. In the example of FIG. 3, the workpiece thickness measuring device 11 is arranged above the upper platen 2. In the present embodiment, it is assumed that the workpiece thickness measuring device 11 is a wavelength-variable infrared laser device. The workpiece thickness measuring device 11 may include, for example, an optical unit that irradiates the workpiece W with laser light, a detection unit that detects the laser light reflected from the workpiece W, and an arithmetic unit that calculates the thickness of the workpiece W from the detected laser light. The exemplified workpiece thickness measuring device 11 can calculate the thickness of the workpiece W based on the difference in the optical path lengths of the laser light incident on the workpiece W between the reflected light reflected from the front surface of the workpiece W and the reflected light reflected from the back surface of the workpiece W. Note that the workpiece thickness measuring device 11 only needs to be able to measure the thickness of the workpiece W in real time and is not limited to the exemplified device using an infrared laser.

[0016] The wafer processing apparatus 1 according to the present embodiment includes a control unit 12. The control unit 12 is connected to the upper platen 2, the lower platen 3, the sun gear 5, the internal gear 6, and the workpiece thickness measuring device 11. The control unit 12 controls each component of the wafer processing apparatus 1.

[0017] The wafer processing apparatus 1 may execute only one process for processing the workpiece W, or may execute two or more processes. The process for processing the workpiece W is also referred to as a processing step. The wafer processing apparatus 1 controls the processing amount of the wafer in each processing step by setting values for one or more setting items in each processing step. In other words, the values set for each setting item executed by the wafer processing apparatus 1 specify the processing operation of the wafer processing apparatus 1. The value set for the setting item is also referred to as a set value. That is, the processing amount of the wafer in each processing step is controlled by changing the set value of each setting item.

[0018] The setting items in the processing steps executed by the wafer processing apparatus 1 may include, for example, the polishing time of the workpiece W or the pressure for polishing the workpiece W. Further, the setting items may include various items such as the rotation speed of the upper platen 2 or the revolution speed or rotation speed of the carrier plate 9.

[0019] The characteristics of the wafer change when the wafer processing apparatus 1 processes the wafer. The characteristics of the wafer are specified by, for example, the flatness of the front or back surface of the wafer or the thickness of the wafer. The characteristics of the wafer processed by the wafer processing apparatus 1 are also referred to as post-processing characteristics.

[0020] When the wafer processing apparatus 1 performs one processing step, a plurality of setting items in that processing step may be related to each other and affect the post-processing characteristics of the wafer. Further, when the wafer processing apparatus 1 executes a plurality of processing steps, the setting items of each processing step may be related to each other and affect the post-processing characteristics of the wafer. Further, in the wafer manufacturing system 100, the setting items of the processing steps executed by a plurality of wafer processing apparatuses 1 may be related to each other and affect the post-processing characteristics of the wafer.

[0021] The wafer processing apparatus 1 according to this embodiment may further include a calculation unit 13 that determines the timing to end the double-sided polishing of the workpiece W during double-sided polishing of the workpiece W. The calculation unit 13 is connected to the control unit 12. The calculation unit 13 acquires workpiece thickness data measured by the workpiece thickness measuring instrument 11 and determines the timing to end the double-sided polishing of the workpiece W. The control unit 12 may terminate the processing operation of the workpiece W by the wafer processing apparatus 1 at the timing determined by the calculation unit 13. Determining the timing to end the double-sided polishing of the workpiece W is also called endpoint detection. The calculation unit 13 may determine the timing to end the double-sided polishing of the workpiece W based on the thickness of the workpiece W as described above, or it may be determined as a timing after a predetermined time has elapsed from the timing when the thickness of the workpiece W satisfies a predetermined condition. By setting the time to continue polishing further from the endpoint detection timing as a processing condition of the wafer processing apparatus 1, the post-processing characteristics of the wafer processed by the wafer processing apparatus 1 can be adjusted.

[0022] (Example configuration of the control device 20) The control device 20 includes a control unit 22. The control unit 22 determines parameters that specify the processing conditions of the wafer processing apparatus 1 and outputs them to the wafer processing apparatus 1. The control unit 22 is configured to communicate with the control unit 12 of the wafer processing apparatus 1. The control unit 22 may include at least one processor. The processor can execute programs that realize various functions of the control unit 22. The processor may be implemented as a single integrated circuit. An integrated circuit is also called an IC (Integrated Circuit). The processor may be implemented as a plurality of communicateable integrated circuits and discrete circuits. The processor may be implemented based on various other known technologies.

[0023] The management device 20 may further include a storage unit 24. The storage unit 24 stores, for example, the measurement results of wafer characteristics measured by an external wafer measuring device. The storage unit 24 may include an electromagnetic storage medium such as a magnetic disk, or a memory such as a semiconductor memory or magnetic memory. The storage unit 24 may include a non-temporary computer-readable medium. The storage unit 24 stores various information and programs executed by the control unit 22. The storage unit 24 may function as the work memory of the control unit 22. At least a part of the storage unit 24 may be configured separately from the control unit 22.

[0024] The management device 20 may further include a communication unit 26 for sending and receiving data to and from the wafer processing device 1 or an external device. The communication unit 26 may be connected to other devices via a network for communication. The communication unit 26 may be connected to other devices via wired or wireless communication. The communication unit 26 may include a communication module for connecting to a network or other devices. The communication module may include a communication interface such as a LAN (Local Area Network). The communication module may include a communication interface for contactless communication such as infrared communication or NFC (Near Field communication). The communication module may implement communication using various communication methods such as 4G or 5G. The communication method implemented by the communication unit 26 is not limited to the examples described above and may include various other methods.

[0025] (Example of operation of the control device 20) The wafer processing apparatus 1 processes a wafer (workpiece W). The post-processing characteristics of the wafer are determined by the processing conditions applied to the wafer. If the wafer manufacturing system 100 has multiple wafer processing apparatuses 1 that perform the same processing, the wafer will be processed by one of the wafer processing apparatuses 1. In other words, the processing conditions applied to the wafer include information for selecting which wafer processing apparatus 1 to apply to the wafer processing from among the multiple wafer processing apparatuses 1. Furthermore, the processing conditions applied to the wafer include the settings for when the selected wafer processing apparatus 1 processes the wafer.

[0026] When manufacturing wafers of a certain type processed by the wafer processing apparatus 1, the post-processing characteristics of the wafer must meet the specifications for that type. In the wafer manufacturing system 100 according to this embodiment, the control unit 22 of the management device 20 determines the processing conditions to be applied to the wafer so that the post-processing characteristics of the wafer meet the specifications for a predetermined type. The control unit 22 outputs the processing conditions to the wafer processing apparatus 1 selected as the processing conditions. The wafer processing apparatus 1 processes the wafer based on those processing conditions.

[0027] <Indicators representing wafer characteristics> Indicators representing the post-processing characteristics of a wafer may include, for example, an index representing the flatness of the wafer. An index representing the flatness of a wafer is also called a flatness index.

[0028] The wafer flatness index may include, for example, the amount of unevenness. The amount of unevenness is an index that represents the degree of unevenness in the overall shape of the wafer. The amount of unevenness is obtained by approximating the relationship between the wafer thickness and the position in the radial direction of the wafer with an even function, and then calculating the difference between the value of the even function at the center of the wafer and the value of the even function at the outer edge of the wafer. In this case, if the calculated value is positive, the wafer is defined as convex. If the calculated value is negative, the wafer is defined as concave. The magnitude of the absolute value of the calculated value represents the degree of unevenness. The wafer flatness index may also include, for example, outer edge flatness. Outer edge flatness is an index that represents the flatness of the wafer periphery. Outer edge flatness may be expressed by, for example, ESFQD (Edge Site flatness Front reference least sQuare Deviation). ESFQD divides the wafer periphery into multiple sites and evaluates the distance between the reference plane within each site and the wafer surface. The smaller the maximum absolute value of ESFQD, the higher the wafer's flatness.

[0029] In the wafer manufacturing system 100 according to this embodiment, the indicators representing the post-processing characteristics of the wafer include the amount of unevenness and the peripheral flatness. The amount of unevenness is also referred to as the first indicator. The peripheral flatness is also referred to as the second indicator. As described above, the amount of unevenness represents the unevenness of the wafer surface. The peripheral flatness represents the flatness of the wafer periphery. As illustrated in Figure 4, there is a correlation between the unevenness of the polished wafer surface and the shape of the wafer periphery. Specifically, Figure 4 shows four wafer surface shapes (A) to (D) as examples. In Figure 4, the dashed line represents the position of the surface (reference plane) when the wafer is flat. The solid line represents the cross-sectional shape of the wafer surface. Also, in Figure 4, the left side of the dashed line representing the reference plane is located at the center of the wafer, and the right side is located at the peripheral part of the wafer.

[0030] Figures 4(A) and (B) show a wafer shape where the wafer surface is below the reference plane (the surface shape is concave), and the wafer edge is higher than the reference plane. Comparing Figures 4(A) and (B), the concave shape of the wafer surface is deeper in (A) than in (B). Also, the shape of the wafer edge is higher in (A) than in (B). In other words, the deeper the concave shape of the wafer surface, the higher the wafer edge. This state of a high wafer edge is also called RollUp.

[0031] When the wafer surface has a concave shape as shown in Figures 4(A) and (B), the amount of unevenness is assumed to be a negative value. Also, when the wafer periphery is higher than the reference plane as shown in Figures 4(A) and (B), the peripheral flatness is assumed to be a positive value. Comparing Figures 4(A) and (B), the amount of unevenness is smaller in (A) than in (B). The absolute value of the amount of unevenness is larger in (A) than in (B). The peripheral flatness is greater in (A) than in (B). In other words, there is a relationship where the smaller the amount of unevenness, the greater the peripheral flatness.

[0032] Figures 4(C) and (D) show a wafer shape where the wafer surface is above the reference plane (the surface shape is convex), and the wafer edge is lower than the reference plane. Comparing Figures 4(C) and (D), the convex shape of the wafer surface is higher in (D) than in (C). Also, the wafer edge is lower in (D) than in (C). In other words, the higher the convex shape of the wafer surface, the lower the wafer edge. This state of a low wafer edge is also called RollOff.

[0033] When the wafer surface is convex, as shown in Figures 4(C) and (D), the amount of unevenness is assumed to be a positive value. Also, when the wafer periphery is lower than the reference plane, as shown in Figures 4(C) and (D), the peripheral flatness is assumed to be a negative value. Comparing Figures 4(C) and (D), the amount of unevenness is greater in (D) than in (C). The peripheral flatness is smaller in (D) than in (C). The absolute value of peripheral flatness is greater in (D) than in (C). In other words, there is a relationship where the greater the amount of unevenness, the smaller the peripheral flatness.

[0034] To summarize what has been described above with reference to Figure 4, in a wafer processed by the wafer processing apparatus 1 according to this embodiment, there is a correlation between the unevenness shape of the wafer surface and the height of the wafer edge. Furthermore, there is a correlation between the amount of unevenness and the flatness of the outer edge. Arrows indicating the trend of change in the values ​​of the amount of unevenness and the flatness of the outer edge are shown to the right of each waveform from (A) to (D) in Figure 4. The values ​​of the amount of unevenness and the flatness of the outer edge tend to change in opposite directions. In this embodiment, it is assumed that the longer the polishing time by the wafer processing apparatus 1, the larger the value of the amount of unevenness and the smaller the value of the flatness of the outer edge tend to be.

[0035] The wafer flatness index is not limited to the examples described above and may include various other indices such as GBIR (Global Backside Ideal Range), ESFQR (Edge flatness metric, Sector based, Front surface referenced, least sQuares fit reference plane, Range of the data within sector), or Bump. The index representing the post-processing characteristics of the wafer is not limited to the flatness index and may include various other indices such as an index representing the wafer thickness.

[0036] <Determination of wafer processing apparatus 1 to be used for processing> As described above, the control unit 22 of the management device 20 determines the processing conditions so that the post-processing characteristics of the wafer meet the specifications of a predetermined type. In this embodiment, the control unit 22 determines the processing conditions so that the amount of unevenness and the flatness of the outer edge, which are indicators representing the post-processing characteristics of the wafer, meet the specifications.

[0037] Here, if the wafer manufacturing system 100 includes multiple wafer processing machines 1, even if the same processing conditions are set for each wafer processing machine 1, the post-processing characteristics of the wafers will vary. The control unit 22 needs to take into account the variation in post-processing characteristics of wafers processed by each wafer processing machine 1 and adjust the processing conditions for each wafer processing machine 1 so that the post-processing characteristics of wafers processed by each wafer processing machine 1 meet the specifications for a predetermined type. However, adjusting the processing conditions so that the amount of unevenness and outer edge flatness meet the specifications may cause other indicators to change.

[0038] The control unit 22 may select a wafer processing apparatus 1 from among a plurality of wafer processing apparatuses 1 in which the processed wafer characteristics meet the specifications of a predetermined type without adjusting the processing conditions. The control unit 22 may apply the selected wafer processing apparatus 1 to wafer processing. The processed wafer characteristics of wafers processed by the selected wafer processing apparatus 1 are more likely to meet the specifications of a predetermined type. The control unit 22 may also determine for each wafer processing apparatus 1 whether the processed wafer characteristics meet the specifications of a predetermined type without adjusting the processing conditions. The control unit 22 may apply the wafer processing apparatus 1 that it has determined to meet the specifications to wafer processing. The processed wafer characteristics of wafers processed by a wafer processing apparatus 1 that has been determined to meet the specifications of a predetermined type without adjusting the processing conditions are more likely to meet the specifications of a predetermined type. By making it easier for the processed wafer characteristics to meet the specifications of a predetermined type, the wafer processing yield is improved.

[0039] In other words, the control unit 22 may evaluate how easily the wafer processing apparatus 1 can meet the specifications. The control unit 22 may then apply the highly-rated wafer processing apparatus 1 to wafer processing. By doing so, the post-processing characteristics of the wafer are more likely to meet the specifications for a given type. As a result, the wafer processing yield is improved.

[0040] Specifically, the control unit 22 selects a wafer processing apparatus 1 whose wafer processing characteristics meet the specifications for a predetermined type without adjusting the processing conditions, based on the actual data of the post-processing characteristics of wafers processed by each wafer processing apparatus 1. The control unit 22 also determines, based on the actual data of the post-processing characteristics of wafers processed by each wafer processing apparatus 1, whether the wafer processing characteristics meet the specifications for a predetermined type without adjusting the processing conditions for each wafer processing apparatus 1. The control unit 22 may evaluate the probability that the wafer processing characteristics of wafers processed by each wafer processing apparatus 1 meet the specifications, based on the actual data of the post-processing characteristics of wafers processed by each wafer processing apparatus 1. The control unit 22 may determine, by selection, determination, or evaluation, which wafer processing apparatus 1 to be applied to processing a predetermined type of wafer.

[0041] The control unit 22 may determine which wafer processing apparatus 1 to apply to the processing of a predetermined type of wafer based on actual data of wafer post-processing characteristics, such as the relationship between the amount of unevenness and the outer edge flatness shown in Figure 5. In the graph of Figure 5, the horizontal axis corresponds to the amount of unevenness. The sign of the value of the amount of unevenness is positive (+) on the right and negative (-) on the left. The vertical axis corresponds to the outer edge flatness. The sign of the value of the outer edge flatness is positive (+) at the top and negative (-) at the bottom. At the intersection of the horizontal and vertical axes, the values ​​of the amount of unevenness and the outer edge flatness are assumed to be 0.

[0042] In the graph of Figure 5, point 30, represented by a solid (black) circle, represents the average value of the amount of unevenness and peripheral flatness of multiple wafers processed under predetermined processing conditions in each wafer processing apparatus 1. The region 40, represented by an ellipse surrounding point 30, represents the range of variation in the amount of unevenness and peripheral flatness of multiple wafers processed in each wafer processing apparatus 1. Region 40 is calculated based on the standard deviation of the values ​​of the amount of unevenness and peripheral flatness of multiple wafers processed under predetermined processing conditions in each wafer processing apparatus 1. Since peripheral flatness tends to become negative as the amount of unevenness becomes positive, region 40 has a shape with its major axis running from the upper left to the lower right of the graph.

[0043] When manufacturing a wafer of a specified type, the post-processing characteristics of the wafer processed by the wafer processing apparatus 1 are required to meet the standards. The standards that the post-processing characteristics of a specified wafer type must meet include, for example, the amount of unevenness and the outer edge flatness, as shown graphically in Figure 6. In Figure 6, the horizontal axis represents the amount of unevenness, and the vertical axis represents the outer edge flatness. The two dashed lines along the vertical axis represent the upper and lower limits of the unevenness standard, and the two dashed lines along the horizontal axis represent the upper and lower limits of the outer edge flatness standard. In other words, the standards for the post-processing characteristics of a specified wafer type that it must meet are represented by the range of rectangles enclosed by two dashed lines each horizontally and vertically.

[0044] As described above, the post-processing characteristics of a wafer are represented by the average value and the range of variation. Here, let's assume that the average value of the post-processing characteristics of a wafer processed by a wafer processing apparatus 1 is represented by point 312, and the range of variation is represented by region 412. This wafer processing apparatus 1 is referred to as the first processing apparatus. The post-processing characteristics of a wafer processed by the first processing apparatus may not meet the standard because region 412 extends beyond the upper limit of the outer edge flatness standard, causing the outer edge flatness to vary in the positive direction.

[0045] Furthermore, let's assume that the average value of the post-processing characteristics of a wafer processed by a wafer processing apparatus 1 is represented by point 322, and the range of variation is represented by region 422. This wafer processing apparatus 1 is referred to as the second processing apparatus. The post-processing characteristics of a wafer processed by the second processing apparatus can meet the standard even when considering variations in the amount of unevenness and outer edge flatness, since region 422 falls within the standard range.

[0046] Here, we assume that the variation in the post-processing characteristics of wafers processed by each wafer processing apparatus 1 is the same. In this case, the closer the average value of the post-processing characteristics of a wafer processed by a particular wafer processing apparatus 1 is to the center of the standard, the more likely the post-processing characteristics of the wafer processed by that wafer processing apparatus 1 are to meet the standard, even considering the variation. As an indicator of how close the average value of the post-processing characteristics of a wafer is to the center of the standard, the distance between the point representing the average value of the post-processing characteristics of the wafer and the origin O representing the center of the standard can be calculated in the graph of Figure 6. A short distance between the point representing the average value of the post-processing characteristics of the wafer and the origin O representing the center of the standard means that the average value of the post-processing characteristics of the wafer is close to the center of the standard.

[0047] In the graph of Figure 6, the horizontal axis scale representing the amount of unevenness and the vertical axis scale representing the flatness of the outer perimeter are normalized such that the width of the standard for the amount of unevenness and the width of the standard for the flatness of the outer perimeter are equal. In this case, the distance is calculated as the square root of the sum of the squares of the amount of unevenness and the squares of the flatness of the outer perimeter. In other words, the distance can be calculated as the length of a two-dimensional vector whose elements are the values ​​of the amount of unevenness and the flatness of the outer perimeter, which represent the post-processing characteristics, in a two-dimensional space where the point representing the center value of the standard is located at the origin.

[0048] The method of calculating distance is not limited to this example. The graph representing the post-processing characteristics of the wafer may have a coordinate system normalized so that the widths of the two standards are equal, as illustrated in Figure 6, or it may have a coordinate system in which the widths of the two standards are different. Regardless of the ratio of the display of the standard widths in the graph, the distance may be calculated by weighting the difference between the amount of unevenness and the center value of the standard, and the difference between the outer edge flatness and the center value of the standard. Furthermore, if the post-processing characteristics are represented by only one type of index, the distance may be calculated as the absolute value of the difference between the center of the standard for that index and the value of that index. If n is a natural number greater than or equal to 2, and the post-processing characteristics are represented by n types of indexes, the distance may be calculated as the length of an n-dimensional vector whose elements are the values ​​of each of the n types of indexes representing the post-processing characteristics, in an n-dimensional space where the point representing the center of the standard is located at the origin.

[0049] If the post-processing characteristics are represented by n types of indicators, the graph will have an axis corresponding to each of the n types of indicators. For example, if there are n indicators that identify the post-processing characteristics, the graph will have n axes. The control unit 22 may actually generate and display the graph, or it may generate the graph virtually as an internal process.

[0050] Point 312, which represents the average post-processing characteristics of a wafer processed by the first processing device, is located on a dashed circle with its center at the origin O and radius R3. In other words, the distance from the origin O, which represents the center value of the specifications for a given type of wafer, to point 312, which represents the average post-processing characteristics of a wafer processed by the first processing device, is expressed as R3. Similarly, point 322, which represents the average post-processing characteristics of a wafer processed by the second processing device, is located on a dashed circle with its center at the origin O and radius R2. In other words, the distance from the origin O, which represents the center value of the specifications for a given type of wafer, to point 322, which represents the average post-processing characteristics of a wafer processed by the second processing device, is expressed as R2.

[0051] In Figure 6, R3 is longer than R2. In this case, the distance from the origin O to point 322, which represents the average value of the post-processing characteristics of the wafer processed by the second processing device, is shorter than the distance from the origin O to point 312, which represents the average value of the post-processing characteristics of the wafer processed by the first processing device.

[0052] Assuming that the processing conditions for the first and second processing apparatus remain unchanged, the average post-processing characteristics of wafers processed by the first processing apparatus and the average post-processing characteristics of wafers processed by the second processing apparatus will both remain unchanged. Therefore, if the only candidates for wafer processing apparatus 1 that processes a predetermined type of wafer are the first and second processing apparatus, under the assumption that the processing conditions remain unchanged, the control unit 22 will determine that the post-processing characteristics of wafers processed by the second processing apparatus are more likely to meet the specifications than those of wafers processed by the first processing apparatus, and will select the second processing apparatus as wafer processing apparatus 1 for processing the predetermined type of wafer.

[0053] However, the processing conditions of the first or second processing apparatus can be changed. For example, processing time or other processing conditions can be changed. Processing conditions can be changed manually. If the wafer processing apparatus 1 is equipped with a calculation unit 13, the calculation unit 13 may automatically change the processing conditions by detecting the endpoint. By changing the processing conditions, the average value of the post-processing characteristics of wafers processed by each apparatus can be adjusted.

[0054] When the processing conditions of the wafer processing apparatus 1 are changed to various conditions, the set of points representing the post-processing characteristics of the wafer processed by the wafer processing apparatus 1 may form a predetermined trajectory in the graph representing the post-processing characteristics. The post-processing characteristics of a wafer processed with various processing conditions may be obtained by actually setting the processing conditions to various conditions in the wafer processing apparatus 1 and measuring the post-processing characteristics of the wafer processed under each condition. Alternatively, the post-processing characteristics of a wafer processed with various processing conditions may be obtained by virtually setting the processing conditions to various conditions in the wafer processing apparatus 1 and calculating the post-processing characteristics of the wafer processed under each condition through simulation.

[0055] A predetermined trajectory of the first processing apparatus is represented as trajectory 31T, drawn as a dashed line in the graph of Figure 6. Trajectory 31T includes point 312. The average post-processing characteristics of the wafer processed by the first processing apparatus can be adjusted to a value represented by a point located on trajectory 31T by adjusting the processing conditions. Similarly, a predetermined trajectory of the second processing apparatus is represented as trajectory 32T, drawn as a dashed line in the graph of Figure 6. Trajectory 32T includes point 322. The average post-processing characteristics of the wafer processed by the second processing apparatus can be adjusted to a value represented by a point located on trajectory 32T by adjusting the processing conditions.

[0056] The point representing the average value of the post-processing characteristics of a wafer processed by wafer processing apparatus 1 can be brought closer to the origin O by changing the processing conditions. The processing conditions of the first processing apparatus can be adjusted so that the average value of the post-processing characteristics of a wafer processed by the first processing apparatus is represented by the value at point 311, which is closest to the origin O among the points on the trajectory 31T. The range of variation in the post-processing characteristics of a wafer processed by the first processing apparatus with adjusted processing conditions is represented as region 411. Similarly, the processing conditions of the second processing apparatus can be adjusted so that the average value of the post-processing characteristics of a wafer processed by the second processing apparatus is represented by the value at point 321, which is closest to the origin O among the points on the trajectory 32T. The range of variation in the post-processing characteristics of a wafer processed by the second processing apparatus with adjusted processing conditions is represented as region 421.

[0057] Point 311, which represents the average post-processing characteristics of a wafer processed by a first processing apparatus with adjusted processing conditions, lies on a dashed-dotted circle with its center at the origin O and radius R1. In other words, the distance from the origin O, which represents the center value of the specifications for a given type of wafer, to point 311, which represents the average post-processing characteristics of a wafer processed by the first processing apparatus with adjusted processing conditions, is expressed as R1. Point 321, which represents the average post-processing characteristics of a wafer processed by a second processing apparatus with adjusted processing conditions, lies outside the dashed-dotted circle with its center at the origin O and radius R1. In other words, the distance from the origin O, which represents the center value of the specifications for a given type of wafer, to point 311, which represents the average post-processing characteristics of a wafer processed by the second processing apparatus with adjusted processing conditions, is greater than R1. In this case, the distance from the origin O to point 321 is shorter than the distance from the origin O to point 311. Therefore, if the only candidates for the wafer processing apparatus 1 for processing a predetermined type of wafer are the first processing apparatus and the second processing apparatus, the control unit 22 determines that, even considering variations in post-processing characteristics, the post-processing characteristics of wafers processed with the first processing apparatus, whose processing conditions have been adjusted, are more likely to meet the standards than those of wafers processed with the second processing apparatus, and determines the first processing apparatus to be the wafer processing apparatus 1 for processing the predetermined type of wafer.

[0058] Let's assume that the average value of the post-processing characteristics of a wafer processed by a wafer processing apparatus 1 is represented by point 332, and the range of variation is represented by region 432. This wafer processing apparatus 1 is referred to as the third processing apparatus. Point 332, which represents the average value of the post-processing characteristics of a wafer processed by the third processing apparatus, is located on a dashed circle whose center is at the origin O and whose radius is R3. In other words, the distance from the origin O, which represents the center value of the specifications of a given type of wafer, to point 312, which represents the average value of the post-processing characteristics of a wafer processed by the third processing apparatus, is represented as R3.

[0059] The distance from the origin O to point 332, which represents the average value of the post-processing characteristics of the wafer processed by the third processing apparatus, is the same as the distance from the origin O to point 312, which represents the average value of the post-processing characteristics of the wafer processed by the first processing apparatus. Therefore, if the processing conditions of the first and third processing apparatuses are not changed, the control unit 22 considers the first and third processing apparatuses to be apparatuses with equivalent performance as a wafer processing apparatus 1 that processes wafers of a predetermined type.

[0060] Here, a predetermined trajectory of the third processing apparatus is represented as trajectory 33T, which is drawn as a dashed line in the graph of Figure 6. Trajectory 33T includes point 332. The average value of the post-processing characteristics of the wafer processed by the third processing apparatus can be adjusted to a value represented by a point located on trajectory 33T by adjusting the processing conditions. The range of variation in the post-processing characteristics of the wafer processed by the third processing apparatus with adjusted processing conditions is represented as region 431. Point 331, which represents the average value of the post-processing characteristics of the wafer processed by the third processing apparatus with adjusted processing conditions, is located outside the dashed circle whose center is at the origin O and whose radius is R1. In other words, the distance from the origin O, which represents the center value of the specifications of a given type of wafer, to point 331, which represents the average value of the post-processing characteristics of the wafer processed by the third processing apparatus with adjusted processing conditions, is greater than R1. In this case, the distance from the origin O to point 311 is shorter than the distance from the origin O to point 331. Therefore, the control unit 22 determines that, even considering variations in post-processing characteristics, the post-processing characteristics of wafers processed with the first processing apparatus, whose processing conditions have been adjusted, are more likely to meet the standards than the post-processing characteristics of wafers processed with the third processing apparatus, and determines the first processing apparatus to be the wafer processing apparatus 1 for processing wafers of a predetermined type.

[0061] Trajectories 31T and 32T are represented as straight lines in Figure 6, but they can also be represented as curves. Furthermore, although trajectories 31T and 32T extend towards the upper left and lower right in Figure 6, they are not limited to the example in Figure 6, and may extend towards the lower left and upper right, or in the left-right or up-down directions. Trajectories 31T and 32T may be straight lines extending in different directions, or they may be different curves.

[0062] The processing conditions of each wafer processing apparatus 1 when processing a predetermined type of wafer can be adjusted so that the point representing the post-processing characteristics of the wafer is closest to the origin O. The control unit 22 calculates the shortest distance between the point representing the post-processing characteristics of the wafer and the origin O that can be achieved when processing a predetermined type of wafer with various processing conditions set for each wafer processing apparatus 1. The shorter the shortest distance calculated for a wafer processing apparatus 1 when processing a predetermined type of wafer, the more suitable that wafer processing apparatus 1 is for processing that predetermined type of wafer. In other words, the calculated shortest distance represents the suitability of the wafer processing apparatus 1 for processing a predetermined type of wafer. The minimum distance that can be achieved when the wafer processing apparatus 1 processes a predetermined type of wafer is also called the suitability of the wafer processing apparatus 1 for the predetermined type.

[0063] The post-processing characteristics of a wafer when adjusted to be closest to the origin O are the optimal post-processing characteristics when each wafer processing apparatus 1 processes a predetermined type of wafer, and are also called the optimal characteristics. The control unit 22 may select the post-processing characteristics that are closest to the center value of the specifications of the predetermined type of wafer from among the post-processing characteristics obtained when the processing conditions of each wafer processing apparatus 1 are changed, as the optimal characteristics. The points representing the optimal characteristics when each wafer processing apparatus 1 processes a predetermined type of wafer are located on the dashed line 30S in the graph of Figure 6. Conversely, the line 30S representing the optimal characteristics is drawn as a set of points representing the optimal characteristics when each wafer processing apparatus 1 processes a predetermined type of wafer. The line 30S representing the optimal characteristics is shown as a straight line extending towards the lower left and upper right in Figure 6, but is not limited to this, and may be shown as a straight line extending in various directions, or as a curve.

[0064] The control unit 22 obtains the optimal characteristics for processing a predetermined type of wafer by adjusting the processing conditions for each wafer processing apparatus 1 so that the point representing the post-processing characteristics of the wafer is closest to the origin O. The control unit 22 may plot the points representing the optimal characteristics for each wafer processing apparatus 1 when processing a predetermined type of wafer on a graph like Figure 6 that represents the post-processing characteristics, and generate a line 30S representing the optimal characteristics. The control unit 22 may rank each point on the line 30S representing the optimal characteristics in order of proximity to the origin O. The control unit 22 assumes that points closer to the origin O are given higher ranks. The control unit 22 determines that the wafer processing apparatus 1 corresponding to the points given higher ranks has high suitability for processing a predetermined type of wafer.

[0065] Specifically, in the example in Figure 6, point 311 represents the optimal characteristics of the first processing apparatus when processing a predetermined type of wafer. Point 321 represents the optimal characteristics of the second processing apparatus when processing a predetermined type of wafer. Point 311 is closer to the origin O than point 321. Therefore, the control unit 22 assigns a higher rank to point 311 than to point 321. As a result, the control unit 22 determines that the first processing apparatus corresponding to point 311 is more suitable for processing the predetermined type of wafer than the second processing apparatus corresponding to point 321.

[0066] Furthermore, point 331 represents the optimal characteristics of the third processing apparatus when processing a predetermined type of wafer. Point 331 is further from the origin O than points 311 and 321. Therefore, the control unit 22 assigns a lower rank to point 331 than to points 311 and 321. As a result, it is determined that the third processing apparatus corresponding to point 331 is less suitable for processing the predetermined type of wafer than the first processing apparatus corresponding to point 311 and the second processing apparatus corresponding to point 321.

[0067] The control unit 22 may rank the first processing apparatus as 1st, the second processing apparatus as 2nd, and the third processing apparatus as 3rd in terms of suitability for processing a predetermined type of wafer. If the required number of wafer processing apparatuses 1 for processing a predetermined type of wafer is determined, the control unit 22 may select the required number of wafer processing apparatuses 1 in order from the wafer processing apparatus 1 associated with the highest ranking. The control unit 22 may then determine the selected required number of wafer processing apparatuses 1 as the wafer processing apparatus 1 for processing the predetermined type of wafer. In the example in Figure 6, if the required number is 1, the control unit 22 will determine only the first processing apparatus, which is ranked 1st in suitability for processing a predetermined type of wafer, as the wafer processing apparatus 1 for processing the predetermined type of wafer. If two units are required, the control unit 22 determines the first processing device, which is ranked first in suitability for processing a predetermined type of wafer, and the second processing device, which is ranked second in suitability, as the wafer processing device 1 for processing the predetermined type of wafer.

[0068] As described above, the control unit 22 can determine which wafer processing apparatus 1 is used to process a predetermined type of wafer. Specifically, for each wafer processing apparatus 1, the control unit 22 acquires the post-processing characteristics of the processed wafer when various processing conditions are set virtually or actually. For each wafer processing apparatus 1, the control unit 22 calculates the distance between the average value of the post-processing characteristics of the processed wafer when various processing conditions are set and the center value of the standard that the processing conditions for the predetermined type of wafer must satisfy. For each wafer processing apparatus 1, the control unit 22 calculates the minimum distance that can be achieved when processing a predetermined type of wafer by setting various processing conditions. The shorter the minimum distance calculated for each wafer processing apparatus 1, the more suitable each wafer processing apparatus 1 is for processing a predetermined type of wafer. Using the minimum distance calculated for each wafer processing apparatus 1 as an index, the control unit 22 ranks the suitability of each wafer processing apparatus 1 for processing a predetermined type of wafer. The control unit 22 selects a wafer processing apparatus 1 from a plurality of wafer processing apparatuses 1 in order of suitability for processing a predetermined type of wafer, and determines it to be the wafer processing apparatus 1 for processing the predetermined type of wafer. In this way, the control unit 22 can take into account the individual differences of each wafer processing apparatus 1 and assign the wafer processing apparatus 1 with the highest suitability for each type of standard that the processing characteristics of the predetermined type of wafer must satisfy. As a result, the quality of the wafers can be improved.

[0069] <Allocation of wafer processing equipment 1 when manufacturing multiple product types> In the wafer manufacturing system 100, multiple types of wafers may be manufactured. For example, suppose a first type, a second type, and a third type of wafer are manufactured. In this case, in the wafer manufacturing system 100, each of the multiple wafer processing apparatuses 1 is assigned to manufacture each type. The control unit 22 assigns each wafer processing apparatus 1 to the processing of each type.

[0070] Changes in the state of the wafer processing apparatus 1 can alter the post-processing characteristics of the wafers processed by that apparatus 1. The control unit 22 may change the assignment of each wafer processing apparatus 1 based on the changes in the post-processing characteristics of the wafers processed by that apparatus 1.

[0071] As shown in Figure 7, the allocation of each wafer processing machine 1 is represented as a map. The map on the left and the map on the right represent the allocation of each wafer processing machine 1 at different points in time. The 18 cells in the map correspond to the 18 wafer processing machines 1 included in the wafer manufacturing system 100. Cells represented by shaded hatching (A) correspond to wafer processing machines 1 allocated to the manufacture of the first type of wafer. Cells represented by upward-sloping hatching (B) correspond to wafer processing machines 1 allocated to the manufacture of the second type of wafer. Cells represented by oblique hatching (C) correspond to wafer processing machines 1 allocated to the manufacture of the third type of wafer.

[0072] The control unit 22 changes which wafer type each wafer processing unit 1 is assigned to manufacture, according to the changes in the post-processing characteristics of the wafers processed by each wafer processing unit 1. Specifically, the control unit 22 may generate graphs plotting points representing the post-processing characteristics of the first, second, and third wafer types, respectively. The origin of each graph represents the center value of the specifications for each wafer type. The control unit 22 may plot points in each graph representing the post-processing characteristics of the wafers processed by each wafer processing unit 1. The control unit 22 may plot points in each graph representing the optimal characteristics when each wafer processing unit 1 processes each wafer type. The control unit 22 may generate lines in each graph corresponding to the line 30S representing the optimal characteristics in Figure 6.

[0073] The control unit 22 calculates the distance between the origin and the point representing the optimal characteristics when each wafer processing machine 1 processes each type of wafer in the graph for each wafer type. The control unit 22 ranks each point in order of shortest distance. The rank assigned to each point corresponds to the ranking of the suitability of each wafer processing machine 1 for processing each type of wafer. The control unit 22 allocates the number of wafer processing machines 1 necessary to process each type of wafer, starting with the wafer processing machine 1 with the highest suitability for processing each type of wafer.

[0074] As illustrated in Figure 7, when wafer processing apparatus 1 is assigned to process a first, second, and third type of wafer, the control unit 22 may rank the wafer processing apparatus 1 in terms of processing suitability for each type. In the example in Figure 7, six wafer processing apparatus 1 are required to process each type. The control unit 22 may assign the wafer processing apparatus 1 with the highest processing suitability ranking for the first type to process the first type, the wafer processing apparatus 1 with the highest processing suitability ranking for the second type to process the second type, and the wafer processing apparatus 1 with the highest processing suitability ranking for the third type to process the third type. The control unit 22 may re-rank the remaining wafer processing machines 1 in terms of their suitability for processing each type, assign the wafer processing machine 1 ranked 1st in terms of suitability for the first type to processing the first type, assign the wafer processing machine 1 ranked 1st in terms of suitability for the second type to processing the second type, and assign the wafer processing machine 1 ranked 1st in terms of suitability for the third type to processing the third type. The control unit 22 may repeat the ranking of suitability and assignment to processing each type until the number of wafer processing machines 1 assigned to processing each type reaches six.

[0075] The control unit 22 may assign two or more wafer processing machines 1 to each wafer type in order of their processing suitability. The control unit 22 may assign six wafer processing machines 1 to the processing of the first wafer type in order of their processing suitability, then assign six of the remaining wafer processing machines 1 to the processing of the second wafer type in order of their processing suitability, and assign the remaining six wafer processing machines 1 to the processing of the third wafer type.

[0076] As a result of the operations described above, the control unit 22 changes the assignments from those shown in the map on the left of Figure 7 to those shown in the map on the right. Specifically, the control unit 22 changes the assignment of one of the six wafer processing machines 1 assigned to the first product to the second product and changes the assignment of one to the third product. Also, the control unit 22 changes the assignment of one of the six wafer processing machines 1 assigned to the second product to the first product and changes the assignment of one to the third product. Also, the control unit 22 changes the assignment of one of the six wafer processing machines 1 assigned to the third product to the first product and changes the assignment of one to the second product.

[0077] <Operation based on the results of processing> The wafer processing apparatus 1 processes a new wafer by being applied to the wafer processing. The control unit 22 of the management device 20 may acquire the post-processing characteristics of the wafer newly processed by the wafer processing apparatus 1.

[0078] The control unit 22 may adjust the processing time of the wafer processing apparatus 1 based on the post-processing characteristics of the wafer newly processed by the wafer processing apparatus 1. The control unit 22 may increase the processing time of the wafer processing apparatus 1 when the amount of unevenness of the newly processed wafer is small or the flatness of the outer edge is large. The control unit 22 may decrease the processing time of the wafer processing apparatus 1 when the amount of unevenness of the newly processed wafer is large or the flatness of the outer edge is small. By doing so, the post-processing characteristics of the wafer are more likely to meet the specifications. As a result, the wafer processing yield may be improved.

[0079] The control unit 22 may update data representing the relationship between at least two indicators based on the post-processing characteristics of the wafer newly processed by the wafer processing apparatus 1. The control unit 22 may re-evaluate the processing suitability of the wafer processing apparatus 1 based on the updated data. In this way, the state of the wafer processing apparatus 1 can be reflected in the evaluation results. As a result, the wafer processing yield may be improved.

[0080] (Example of management procedure) The control unit 22 of the management device 20 may manage the wafer processing apparatus 1 by executing a management method that includes the steps of the flowchart illustrated in Figure 8. The management method may also be implemented as a management program to be executed by the control unit 22.

[0081] The control unit 22 acquires actual post-processing characteristics data of wafers processed by each wafer processing apparatus 1 (step S1). The control unit 22 acquires post-processing characteristics of wafers processed by changing the processing conditions in the wafer processing apparatus 1 to various conditions (step S2).

[0082] The control unit 22 calculates the distance between a point representing the post-processing characteristics, plotted on a graph with the origin being a point representing the center value of the specifications of a predetermined type of wafer, and the origin of that graph (step S3). The control unit 22 sets the processing conditions for each wafer processing apparatus 1 so that the distance between the point representing the post-processing characteristics and the origin is minimized, and acquires the post-processing characteristics that result in the shortest distance between the point representing the post-processing characteristics and the origin for the predetermined type of wafer as the optimal characteristics (step S4). Based on the acquired optimal characteristics, the control unit 22 ranks each wafer processing apparatus 1 in order of suitability for processing the predetermined type of wafer (step S5).

[0083] The control unit 22 assigns the wafer processing apparatus 1 to process a predetermined type of wafer, starting with the one with the highest processing suitability ranking. In other words, the control unit 22 assigns the wafer processing apparatus 1 based on the processing suitability ranking (step S6). After executing the procedure in step S6, the control unit 22 finishes executing the procedure in the flowchart of Figure 8. After executing the procedure in step S6, the control unit 22 may return to the procedure in step S1 and assign the wafer processing apparatus 1 to process other types of wafers. The control unit 22 may also perform the assignment of wafer processing apparatus 1 to process multiple types of wafers in parallel.

[0084] As described above, in the wafer manufacturing system 100 according to this embodiment, the control unit 22 of the management device 20 manages a plurality of wafer processing devices 1. The control unit 22 calculates the distance between the post-processing characteristics of the wafer processed by each wafer processing device 1 and the center value of the specifications for a predetermined type of wafer. Based on the distance calculated for each wafer processing device 1, the control unit 22 determines which wafer processing device 1 to assign to processing the predetermined type of wafer from among the plurality of wafer processing devices 1. The control unit 22 may calculate the optimal characteristics of each wafer processing device 1 based on actual data of the post-processing characteristics of the wafers and assign the wafer processing devices 1 in order of how close the optimal characteristics are to the center value of the specifications for the predetermined type of wafer. In this way, the post-processing characteristics of the wafers are more likely to meet the specifications. Furthermore, even when multiple indicators that have a trade-off relationship, such as the amount of unevenness and the flatness of the outer edge, are defined as specifications, the post-processing characteristics of the wafers are more likely to meet the specifications. As a result, the wafer processing yield in the wafer manufacturing system 100 can be improved.

[0085] While embodiments relating to this disclosure have been described based on the drawings and examples, it should be noted that those skilled in the art can make various modifications or alterations based on this disclosure. Therefore, it should be noted that these modifications or alterations are included within the scope of this disclosure. For example, the functions included in each component or step can be rearranged in a logically consistent manner, and multiple components or steps can be combined into one or divided. While embodiments relating to this disclosure have been described primarily in terms of apparatus, embodiments relating to this disclosure can also be realized as methods including steps performed by each component of the apparatus. Embodiments relating to this disclosure can also be realized as methods, programs, or storage media recording programs executed by a processor in the apparatus. These should also be understood to be included within the scope of this disclosure.

[0086] The graphs included in this disclosure are schematic. Scales and other elements may not necessarily correspond to reality. [Industrial applicability]

[0087] According to the embodiments of this disclosure, the wafer processing yield can be improved. [Explanation of Symbols]

[0088] 100 wafer manufacturing system 1. Wafer processing equipment (2: Upper platen, 3: Lower platen, 4: Rotary platen, 5: Sun gear, 6: Internal gear, 7: Polishing pad, 8: Hole, 9: Carrier plate, 10: Hole, 11: Workpiece thickness measuring instrument, 12: Control unit, 13: Calculation unit, W: Workpiece (wafer)) 20 Management device (22: control unit, 24: memory unit, 26: communication unit) 30, 311, 312, 321, 322, 331, 332 Points representing post-processing characteristics 30S Optimal Characteristics Line 31T, 32T, 33T trajectory 40, 411, 412, 421, 422, 431, 432 area R1, R2, R3: Radii of concentric circles centered at the origin.

Claims

1. It includes a control unit that manages multiple wafer processing machines, The control unit, When calculating the optimal characteristics of wafers processed by each wafer processing apparatus, the post-processing characteristics that are closest to the center value of the specifications for a predetermined type of wafer for each wafer processing apparatus are selected as the optimal characteristics from among the post-processing characteristics obtained when the processing conditions of each wafer processing apparatus are changed, and which are closest to the center value of the specifications for the predetermined type of wafer. Based on the distance between the optimal characteristics and the center value of the specifications of the predetermined wafer type, a wafer processing apparatus is determined from among the plurality of wafer processing apparatuses to be assigned to the processing of the predetermined wafer type in order from the shortest distance between the optimal characteristics and the center value of the specifications of the predetermined wafer type. Management device.

2. The control device according to claim 1, wherein the processing conditions are determined by each wafer processing apparatus performing endpoint detection.

3. The control device according to claim 1 or 2, wherein the control unit plots points representing the post-processing characteristics of the wafer on a graph with the center value of the specifications of the predetermined wafer type as the origin, and calculates the distance between the plotted points and the origin of the graph.

4. A management method for managing multiple wafer processing machines, When calculating the optimal characteristic for each wafer processing apparatus, among the post-processing characteristics of wafers processed by each wafer processing apparatus, the post-processing characteristic that is closest to the center value of the specifications of a predetermined type of wafer is selected as the optimal characteristic from among the post-processing characteristics obtained when the processing conditions of each wafer processing apparatus are changed, and A step of determining which wafer processing apparatus to assign to processing the predetermined wafer type from among the plurality of wafer processing apparatuses, in order of the shortest distance between the optimal characteristics and the center value of the specifications of the predetermined wafer type, based on the distance between the optimal characteristics and the center value of the specifications of the predetermined wafer type. Management methods, including those mentioned above.

5. The control method according to claim 4, wherein the processing conditions are determined by each wafer processing apparatus performing endpoint detection.

6. The management method according to claim 4 or 5, further comprising the step of plotting points representing the post-processing characteristics of the wafer on a graph with the center value of the specifications of the predetermined wafer type as the origin, and calculating the distance between the plotted points and the origin of the graph.

7. A wafer manufacturing system comprising a control device according to claim 1 or 2, and a wafer processing apparatus controlled by the control device.

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