Film deposition method and film deposition apparatus

By exposing substrates with recesses to a noble gas plasma and controlling the distribution of hydroxyl groups, the method addresses uneven film quality in recesses, achieving a uniform film thickness and improved film formation.

JP7841820B2Active Publication Date: 2026-04-07TOKYO ELECTRON LTD
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Filing Date
2022-11-22
Publication Date
2026-04-07

AI Technical Summary

Technical Problem

Existing film formation techniques result in variations in film quality in the depth direction of recesses on substrates, particularly in semiconductor wafers, due to uneven distribution and reaction of gases within the recesses.

Method used

A method involving the exposure of substrates with recesses to a plasma generated from a noble gas and a reformed gas to adsorb hydroxyl groups in a desired distribution, followed by the sequential supply of first and second reaction gases to form a film, ensuring uniform film thickness and quality across the recess depth.

Benefits of technology

This approach reduces variations in film quality in the depth direction of recesses by controlling the distribution of hydroxyl groups and reaction products, resulting in a more uniform and stable film formation process.

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Patent Text Reader

Abstract

To provide a technique that, when forming a film in a recess, can reduce the variation of the film quality in the depth direction of the recess.SOLUTION: A film formation method according to one aspect of this disclosure is one for forming a film in a recess which a substrate has on its surface, including the steps of: forming, in the recess, a film due to a reaction product of a first reaction gas and a second reaction gas which react with each other; and exposing the substrate on which a film is formed to a plasma generated from a noble gas. The step of forming a film includes the steps of: exposing the substrate to a plasma generated from a noble gas and a reformed gas and making hydroxyl groups adsorbed by the inner surface of the recess with a desired distribution; supplying the first reaction gas to the substrate on which the hydroxyl groups are adsorbed; supplying the second reaction gas to the substrate on which the first reaction gas is adsorbed, and reacting the first reaction gas with the second reaction gas to produce the reaction product.SELECTED DRAWING: Figure 9
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Citation Information

Patent Citations

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    JP2011151343A

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    JP2013135154A

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    JP2018186178A

  • Deposition method

    JP2021034407A