Back-contact solar cell and its manufacturing method, photovoltaic assembly
The back-contact solar cell design with alternating doping regions and connecting layers addresses the hot spot effect in IBC cells, improving efficiency and yield by reducing carrier recombination and leakage currents.
Patent Information
- Application Number
- JP2026015419
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2025-03-28
- Filing Date
- 2026-02-02
- Publication Date
- 2026-04-09
- Estimated Expiration
- 2045-10-20
AI Technical Summary
IBC cells experience a hot spot effect due to localized temperature increases caused by shading and defects, which can lead to safety issues and reduced power output in photovoltaic assemblies.
A back-contact solar cell design with alternating doping regions, passivation contact layers, and a connecting layer that forms both indirect and direct leakage current paths, reducing carrier recombination and limiting leakage current paths to improve photoelectric conversion efficiency and mitigate the hot spot effect.
The design enhances the photoelectric conversion efficiency and yield of photovoltaic assemblies by minimizing the hot spot effect while maintaining efficiency, ensuring balanced leakage current and electric field distribution.