Curable resin film, film material for semiconductor device manufacturing, curable resin composition for semiconductor device manufacturing, and method for manufacturing a semiconductor device.

Abstract

Disclosed is a curable resin film that has tackiness, and that can be used for production of a semiconductor device. The curable resin film exhibits transmittance of 20% or less of 355 nm-wavelength light. The semiconductor device is produced via a method including: forming a temporarily fixed multilayer body comprising a carrier and a sealing structure body provided on a principal surface of the carrier; and removing the carrier from the temporarily fixed multilayer body. The temporarily fixed multilayer body is formed via a method including sticking together the curable resin film and the carrier. By separating a protective layer, which is the cured curable resin film, from the carrier, the carrier is removed from the temporarily fixed multilayer body.

Description

Technical Field

[0001] The present disclosure relates to a curable resin film, a film material for manufacturing a semiconductor device, a curable resin composition for manufacturing a semiconductor device, and a method for manufacturing a semiconductor device.

Background Art

[0002] A method for manufacturing a semiconductor device such as a fan-out package may include processes such as processing a semiconductor chip and forming a redistribution layer (RDL), and these processes may be performed with the semiconductor chip temporarily fixed to a carrier.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure relates to a method for efficiently manufacturing a semiconductor device by a method including temporarily fixing a semiconductor chip to a carrier, and a curable resin film used therefor.

Means for Solving the Problems

[0005] One aspect of this disclosure relates to a tacky curable resin film used for manufacturing a semiconductor device. The curable resin film exhibits a transmittance of 20% or less to light with a wavelength of 355 nm. The semiconductor device is manufactured by a method comprising forming a temporary fixed laminate comprising a carrier and a sealing structure including a plurality of semiconductor chips and a sealing portion that seals the plurality of semiconductor chips, and removing the carrier from the temporary fixed laminate. The semiconductor chip has a chip body portion having a first surface and a second surface on the opposite side thereof, and a connection terminal provided on the first surface. The sealing portion has an integral protective layer covering the second surface of the plurality of semiconductor chips, and a sealing material layer that seals the plurality of semiconductor chips together with the protective layer. The protective layer is a cured curable resin film. The temporary fixed laminate is formed by a method comprising bonding the curable resin film and the carrier. The carrier is removed from the temporary fixed laminate by separating the protective layer from the carrier.

[0006] Another aspect of this disclosure relates to a film material for manufacturing semiconductor devices, comprising a support film and a curable resin film provided on the support film.

[0007] Another aspect of this disclosure relates to a curable resin composition for the manufacture of semiconductor devices, comprising a light absorber and used to form the curable resin film.

[0008] Another aspect of this disclosure relates to a method for manufacturing a semiconductor device by the method described above. [Effects of the Invention]

[0009] According to one aspect of this disclosure, semiconductor devices can be efficiently manufactured by a method that includes temporarily fixing a semiconductor chip to a carrier. [Brief explanation of the drawing]

[0010] [Figure 1]This is a cross-sectional view showing one embodiment of a film material having a curable resin film. [Figure 2] This is a cross-sectional view showing one embodiment of a semiconductor device. [Figure 3] (a), (b), (c), and (d) are process diagrams illustrating one embodiment of a method for manufacturing a semiconductor device. [Figure 4] (a), (b), (c), and (d) are process diagrams illustrating one embodiment of a method for manufacturing a semiconductor device. [Figure 5] (a), (b), (c), and (d) are process diagrams illustrating one embodiment of a method for manufacturing a semiconductor device. [Figure 6] (a), (b), (c), and (d) are process diagrams illustrating one embodiment of a method for manufacturing a semiconductor device. [Figure 7] (a), (b), (c), (d), and (e) are process diagrams illustrating one embodiment of a method for manufacturing a semiconductor device. [Figure 8] (a), (b), (c), (d), and (e) are process diagrams illustrating one embodiment of a method for manufacturing a semiconductor device. [Figure 9] This is the ultraviolet-visible absorption spectrum of a curable resin film. [Modes for carrying out the invention]

[0011] Several embodiments of this disclosure will be described in detail below, with reference to the drawings as necessary. However, this disclosure is not limited to the embodiments described below. In the following description, the same or corresponding parts will be denoted by the same reference numerals, and redundant descriptions may be omitted. Positional relationships such as up, down, left, and right will be based on the positional relationships shown in the drawings unless otherwise specified. The dimensional ratios in the drawings are not limited to the ratios shown. Numerical ranges represented by "~" mean a range including upper and lower limits.

[0012] Figure 1 is a cross-sectional view showing one embodiment of a film material having a curable resin film. The film material 5 shown in Figure 1 includes a support film 3A, a curable resin film 22 provided on the support film 3A, and a protective film 3B that covers the side of the curable resin film 22 opposite to the support film 3A.

[0013] The curable resin film 22 may have tackiness. The curable resin film 22 may have tackiness sufficient to be bonded to a glass substrate in an environment of 25°C. A curable resin film 22 having tackiness can be bonded to a carrier described later at room temperature or relatively low temperature conditions. In addition, a semiconductor chip can be placed at a predetermined position on the curable resin film 22 at a relatively low temperature.

[0014] When the curable resin film 22 is bonded to a glass substrate at a temperature of 25°C, the 90-degree peel strength between the curable resin film 22 and the glass substrate may be 10 N / m or more, 20 N / m or more, 30 N / m or more, or 40 N / m or more at 25°C, and may also be 200 N / m or less. "25°C temperature condition" means the condition in which the temperature of the curable resin film 22 and the glass substrate is 25°C.

[0015] When a curable resin film 22 bonded to a glass substrate is cured, and then a laser beam is irradiated onto the cured curable resin film 22 from the glass substrate side, the adhesive strength between the curable resin film 22 and the glass substrate may be 5 MPa or less.

[0016] The curable resin film 22 can be a film with low light transmittance. Specifically, the transmittance of the curable resin film 22 after curing with respect to light with a wavelength of 355 nm may be 20% or less, 15% or less, 10% or less, 9% or less, 8% or less, 7% or less, 6% or less, 5% or less, 4% or less, 3% or less, 2% or less, 1% or less, or 0.5% or less, and may also be 0% or more. Since the curable resin film 22 with low light transmittance efficiently absorbs light, it can be easily separated from carriers by irradiation with light (for example, laser). The transmittance here means the ratio of the intensity of transmitted light to the intensity of incident light when light having a predetermined wavelength is incident on the curable resin film 22 from one main surface side. The light transmittance of the curable resin film 22 before curing with respect to light with a wavelength of 355 nm may be 20% or less, 15% or less, 10% or less, 9% or less, 8% or less, 7% or less, 6% or less, 5% or less, 4% or less, 3% or less, 2% or less, 1% or less, or 0.5% or less, and may also be 0% or more.

[0017] The shear viscosity of the curable resin film 22 may be 5000 Pa·s or more, 6000 Pa·s or more, 7000 Pa·s or more, or 8000 Pa·s or more at 100 °C, and may also be 100000 Pa·s or less, 90000 Pa·s or less, or 80000 Pa·s or less. When the shear viscosity of the curable resin film 22 is within this range, a sufficient effect of holding the adherend is particularly easily obtained. [[ID=​6]]

[0018] The storage elastic modulus of the cured curable resin film 22 may be 300 MPa or more, 400 MPa or more, or 500 MPa or more at 25°C, and may be 6000 MPa or less, 5500 MPa or less, or 5000 MPa or less. The storage elastic modulus of the cured curable resin film 22 may be 0.1 MPa or more, 0.5 MPa or more, or 1.0 MPa or more at 250°C, and may be 200 MPa or less, 190 MPa or less, 180 MPa or less, 170 MPa or less, 160 MPa or less, 150 MPa or less, 140 MPa or less, 130 MPa or less, or 120 MPa or less. When the storage elastic modulus of the cured curable resin film 22 is within these ranges, a sufficient effect of protecting the semiconductor element can be obtained.

[0019] The curable resin film 22 may contain a light absorber. The curable resin film containing a light absorber can easily have sufficiently low light transmittance. The light absorber may be a material that absorbs laser light and generates heat. The light absorber may be a black pigment or dye. Specific examples of the light absorber include carbon black, aluminum, nickel, and titanium oxide.

[0020] The content of the light absorber can be, for example, within a range such that the transmittance of the curable resin film 22 to light with a wavelength of 355 nm is 20% or less. Specifically, the content of the light absorber may be 0.1% by mass or more or 1% by mass or more based on the mass of the curable resin film 22, and may be 30% by mass or less, 25% by mass or less, 20% by mass or less, 15% by mass or less, 10% by mass or less, or 5% by mass or less.

[0021] The curable resin film 22 may contain a thermoplastic resin. A curable resin film 22 containing a thermoplastic resin having a low glass transition temperature is more likely to form a semiconductor device with suppressed warping. From this viewpoint, the glass transition temperature of the thermoplastic resin may be -40°C or higher and 40°C or lower or 30°C or lower, or -30°C or higher and 40°C or lower or 30°C or lower. When the glass transition temperature of the thermoplastic resin is 40°C or lower or 30°C or lower, the curable resin film tends to have appropriate flexibility and adhesion to the substrate. When the glass transition temperature of the thermoplastic resin film is -40°C or higher or -30°C or higher, the uncured curable resin film tends to have appropriate tackiness and handling properties.

[0022] Thermoplastic resins may have reactive groups. The reactive groups of thermoplastic resins may be, for example, epoxy groups. Because epoxy groups are relatively less likely to promote crosslinking reactions, they tend to suppress the gelation of varnish for forming thermosetting resin films and the decrease in adhesive strength to the substrate caused by an unintended increase in the degree of curing of the curable resin film.

[0023] The thermoplastic resin may be a (meth)acrylic copolymer, or a (meth)acrylic copolymer having a reactive group. In this specification, "(meth)acrylic" is used as a term meaning acrylic or methacrylic. Other similar terms shall be interpreted similarly.

[0024] (Meth)acrylic copolymers are copolymers that contain (meth)acrylic monomers having (meth)acryloyl groups as monomer units. A (meth)acrylic copolymer may also be a copolymer that contains, as monomer units, (meth)acrylic monomers that form a homopolymer having a glass transition temperature of 50°C or higher, (meth)acrylic monomers that form a homopolymer having a glass transition temperature of 0°C or lower, and (meth)acrylic monomers having epoxy groups. The glass transition temperature of the homopolymer formed by the (meth)acrylic monomer having epoxy groups is not limited. The (meth)acrylic monomers that form a homopolymer having a glass transition temperature of 50°C or higher, and the (meth)acrylic monomers that form a homopolymer having a glass transition temperature of 0°C or lower, may be monomers that do not have epoxy groups.

[0025] The weight-average molecular weight of the thermoplastic resin may be between 200,000 and 1,000,000. Here, the weight-average molecular weight can be a standard polystyrene equivalent value measured by gel permeation chromatography. When the weight-average molecular weight of the thermoplastic resin is within this range, the curable resin film tends to form stably, and the curable resin film tends to have appropriate strength, flexibility, and tackiness. Furthermore, the curable resin film also tends to have excellent handling and heat resistance. Additionally, when the weight-average molecular weight of the thermoplastic resin is 1,000,000 or less, appropriate fluidity is easily obtained.

[0026] The thermoplastic resin content may be 10 to 80% by mass, based on the mass of the curable resin film 22. When the thermoplastic resin content is 10% by mass or more, the handling properties of the curable resin film at high temperatures tend to improve. When the thermoplastic resin content is 80% by mass or less, the curable resin film after curing tends to have a moderately large modulus of elasticity, thereby making it easier to obtain high reliability.

[0027] The curable resin film 22 may further contain a curable resin which is a compound having a reactive group. The curable resin may be an epoxy resin having two or more epoxy groups, and examples include bisphenol A type epoxy resin, bisphenol F type epoxy resin, phenol novolac type epoxy resin, and cresol novolac type epoxy resin. Two or more epoxy resins selected from these may be used in combination. The molecular weight of the curable resin may be 3000 or less. The curable resin film 22 containing the curable resin has curability and is likely to have moderate tackiness.

[0028] The content of the curable resin may be 1% by mass or more and 50% by mass or 40% by mass or more, based on the mass of the curable resin film 22, or 5% by mass or more and 50% by mass or 40% by mass or less. When the content of the curable resin is within these ranges, semiconductor devices are particularly easy to manufacture stably and efficiently. When the content of the curable resin is 1% by mass or more or 5% by mass or more, the adhesion strength of the curable resin film to the semiconductor chip is improved, and as a result, the reliability of the manufactured semiconductor device tends to improve. When the content of the curable resin is 50% by mass or less or 40% by mass, excessive flow of the curable resin film tends to be further suppressed.

[0029] The curable resin film 22 may further contain silica filler. The silica filler content may be 1 to 60% by mass, or 5 to 60% by mass, based on the mass of the curable resin film 22. The protective layer formed by curing the curable resin film 22 containing silica filler can be easily imprinted on its surface by laser irradiation. When the silica filler content is 60% by weight or less, the curable resin film after curing tends to have an appropriate storage modulus and exhibits particularly good adhesion.

[0030] The curable resin film 22 may further contain a curing agent that reacts with a reactive group of a thermoplastic resin, a reactive group of a curable resin, or both. The curing agent may be, for example, a phenolic resin. If the curable resin film 22 contains a curing agent, it may further contain a curing accelerator that promotes the reaction of the curing agent. For example, if the curing agent is a phenolic resin, the curing accelerator may be an imidazole compound.

[0031] The curable resin film 22 does not have to substantially contain a silicone compound having a polysiloxane chain. A curable resin film that does not contain a silicone compound tends to have good adhesion to semiconductor chips after curing. Specifically, the content of the silicone compound may be less than 1.0 part by mass, less than 0.9 parts by mass, or less than 0.8 parts by mass per 100 parts by mass of thermoplastic resin.

[0032] The thickness of the curable resin film 22 may be, for example, 10 to 400 μm.

[0033] The support film 3A and protective film 3B may be thermoplastic resin films, such as polyethylene terephthalate film. The thickness of the support film 3A and protective film 3B may be 10 to 150 μm.

[0034] The film material 5 can be obtained, for example, by a method that includes applying a varnish containing a curable resin composition and a solvent, which constitutes the curable resin film 22, to a support film 3A; forming the curable resin film 22 by removing the solvent from the coating on the support film 3A; and laminating a protective film 3B on the surface of the curable resin film 22 opposite to the support film 3A.

[0035] The film materials and curable resin films described above can be used to manufacture a semiconductor device by a method comprising forming a temporary fixed laminate comprising a carrier and a sealing structure provided on the main surface of the carrier, and removing the carrier from the temporary fixed laminate.

[0036] Figure 2 is a schematic cross-sectional view showing an example of a semiconductor device that can be manufactured using a curable resin film 22. The semiconductor device 1 shown in Figure 2 is a device having a fan-out package (FO-PKG) structure and comprises a semiconductor chip 10, a sealing part 15 that seals the semiconductor chip 10, a redistribution layer 13, and solder balls 14. The semiconductor chip 10 has a chip body 10a having a first surface S1 and a second surface S2 on the opposite side, and connection terminals 10b provided on the first surface S1. The redistribution layer 13 is a layer for widening the terminal pitch of the connection terminals 10b and includes an insulating layer 13a containing, for example, polyimide, and wiring 13b such as copper wiring. The terminal pitch of the connection terminals 10b is widened by pitch conversion by the redistribution layer 13. The solder balls 14 are connected to the terminals whose terminal pitch has been widened by the redistribution layer 13.

[0037] The sealing portion 15 has a sealing material layer 11 that covers the portion of the semiconductor chip 10 surface other than the second surface S2, and a protective layer 12 that covers the second surface S2, sealing the semiconductor chip 10 on the redistribution layer 13. The protective layer 12 can be a cured product of the curable resin film 22 according to the above embodiment. The surface S3 of the sealing material layer 11 opposite to the redistribution layer 13 forms a flat surface together with the second surface S2 of the semiconductor chip 10, and the protective layer 12 extends to cover this entire flat surface. The protective layer 12 can be a permanent film that constitutes the semiconductor device without being removed after the manufacture of the semiconductor device.

[0038] Figures 3, 4, and 5 are process diagrams showing an example of a method for manufacturing a semiconductor device 1. The method shown in Figures 3 to 5 includes forming a temporary fixed laminate 45 (Figure 3(d)) comprising a carrier 20 and a sealing structure 40 provided on the main surface of the carrier 20, and removing the carrier 20 from the temporary fixed laminate 45. The temporary fixed laminate 45 can be formed by a method that includes bonding a curable resin film 22 and a carrier 20, arranging a plurality of semiconductor chips 10 on the surface of the curable resin film 22 opposite to the carrier 20, with the second surface S2 in contact with the curable resin film 22, curing the curable resin film 22 to form a protective layer 12 which is a cured curable resin film, fixing the plurality of semiconductor chips 10 on the protective layer 12, and forming a sealing material layer 11 on the protective layer 12 and on the semiconductor chips 10, thereby forming a sealed portion 15 having the protective layer 12 and the sealing material layer 11.

[0039] The protective film 3B may be peeled off from the film material 5 illustrated in Figure 1, the exposed curable resin film 22 may be bonded to the carrier 20, and then the support film 3A may be peeled off from the curable resin film 22. The curable resin film 22 and the carrier 20 may be bonded under temperature conditions of 20 to 120°C. "Temperature conditions of 20 to 120°C" means conditions in which the temperature of the curable resin film 22 and the carrier 20 is within the range of 20 to 120°C. These temperature conditions may also be 40 to 100°C. The laminate of the curable resin film 22 and the carrier 20 may be pressurized for bonding, and the pressure for this may be, for example, 0.01 to 1 MPa.

[0040] The carrier 20 may be, for example, a glass substrate or a transparent resin substrate. The thickness of the carrier 20 may be, for example, 0.1 to 2.0 mm.

[0041] Multiple semiconductor chips 10 are arranged at predetermined positions on the curable resin film 22 laminated to the carrier 20, with their second surfaces S2 facing the curable resin film 22, i.e., face-up. The semiconductor chips 10 may be placed on the curable resin film 22 while heating the curable resin film 22, the semiconductor chips 10, or both. The heating temperature may be, for example, 20 to 120°C or 60 to 100°C. The semiconductor chips 10 placed on the curable resin film 22 may be pressurized, with a pressure of 0.01 to 1.0 MPa or 0.1 to 0.2 MPa. The pressurization time may be, for example, 0.01 to 10 seconds or 0.1 to 2 seconds.

[0042] Next, as shown in Figure 3(c), the curable resin film 22 is cured by heat or light, or at least one of the two, to form an integrated protective layer 12 (cured curable resin film) that covers the second surface S2 of all of the semiconductor chips 10. The semiconductor chips 10 are fixed to the carrier 20 via the formed protective layer 12. The adhesive strength between the protective layer 12 and the carrier 20 at this point may be 1 MPa or more.

[0043] As shown in Figure 3(d), a sealing layer 11 is formed on the protective layer 12 to encapsulate multiple semiconductor chips 10 together. The sealing layer 11 can be formed using a sealing material commonly used to encapsulate semiconductor chips. The sealing material may be a thermosetting resin composition containing epoxy resin. The semiconductor chips 10 are contained within a encapsulated portion 15 formed by the sealing layer 11 and the protective layer 12. The sealing layer 11 is formed by a conventional method such as compression molding. Because the semiconductor chips 10 are fixed to the protective layer 12, displacement of the semiconductor chips 10 is unlikely to occur while the sealing layer 11 is being formed.

[0044] One embodiment of a method for manufacturing a semiconductor device, as shown in Figures 4 and 5, may further include: removing a portion of the encapsulating material layer 11 by polishing from the side opposite to the protective layer 12 to expose the connection terminals 10b; forming a redistribution layer 13 on the encapsulating material layer 11 having wiring 13b connected to the exposed connection terminals 10b and an insulating layer 13a; providing solder balls 14 connected to the wiring 13b on the surface of the redistribution layer 13 opposite to the encapsulating material layer 11; irradiating the protective layer 12 with light L from the carrier 20 side to separate the protective layer 12 from the carrier 20; dividing the encapsulating structure 40 including a plurality of semiconductor chips 10 on a dicing tape 50 to form individual semiconductor devices 1; and picking up the semiconductor devices 1 from the dicing tape 50. An encapsulating structure having semiconductor chips 10 and an encapsulating material layer 11, but without a protective layer 12, may be damaged, such as cracking, due to delamination at the interface between the semiconductor chips 10 and the encapsulating material layer 11, if it is not supported by a carrier or the like. However, the provision of the protective layer 12 can suppress damage to the encapsulation structure that is separated from the carrier during the manufacturing process.

[0045] The polishing of the protective layer 12, the formation of the redistribution layer 13, and the formation of solder balls can be carried out by conventional methods.

[0046] The light L used to separate the protective layer 12 from the carrier 20 may be, for example, laser light. The light source for the laser light may be, for example, an excimer laser. The wavelength of the laser light generated from the excimer laser can be, for example, 193 nm, 248 nm, 308 nm, 351 nm, or 532 nm. The surface of the protective layer 12 is altered by irradiation with laser light, and as a result, the adhesive strength between the protective layer 12 and the carrier 20 decreases. For example, the adhesive strength between the protective layer 12 (cured curable resin film) and the carrier 20 (e.g., glass substrate) after laser light irradiation may be 5.0 MPa or less.

[0047] The protective layer 12 may be engraved with necessary information, such as the product name, on the surface opposite to the semiconductor chip 10 by irradiation with laser light (e.g., a green laser). The exposed surface of the protective layer 12 may be cleaned as needed.

[0048] The process of forming the individual semiconductor devices 1 may include, as shown in Figure 5, attaching a dicing tape 50 to a protective layer 12, cutting a sealing structure 40 including a plurality of semiconductor chips 10, a sealing portion 15 including the protective layer 12, a redistribution layer 13, and solder balls 14 at a predetermined location S to form a plurality of semiconductor devices 1, and picking up the semiconductor devices 1 from the dicing tape 50.

[0049] Figures 6, 7, and 8 are process diagrams showing another example of a method for manufacturing a semiconductor device 1. The method shown in Figures 6-8 includes forming a temporary fixing laminate 45 (Figure 7(e)) comprising a carrier 20 and a sealing structure 40 provided on the main surface of the carrier 20, and removing the carrier 20 from the temporary fixing laminate 45. The temporary fixing laminate 45 is formed by preparing a temporary fixing material 35 having a carrier 30 and an adhesive layer 32 provided on the carrier 30, as shown in Figures 6(a)-(d) and 7(a)-(c), and preparing a plurality of semiconductor chips 10 having a chip body portion 10a having a first surface S1 and a second surface S2 on the opposite side and a connection terminal 10b provided on the second surface S2, and temporarily fixing the temporary fixing material 35 and the plurality of semiconductor chips 10 with the first surface S1 facing the temporary fixing material 35. Furthermore, the temporary fixing laminate 45 (Figure 6(c)) has a sealing material layer 11 that encapsulates multiple semiconductor chips 10 together on a temporary fixing material 35, and the second surfaces S2 of the multiple semiconductor chips 10 are exposed from the sealing material layer 11; a curable resin film 22 covers the second surfaces S2 and the sealing material layer 11; the curable resin film 22 and the carrier 20 are bonded together; and the temporary fixing material 35 is removed from the temporary fixing laminate 45.

[0050] The carrier 30 constituting the temporary fixing material 35 may be, for example, a glass substrate. The adhesive layer 32 constituting the temporary fixing material 35 may be, for example, a release sheet that has adhesive strength at room temperature and whose adhesive strength decreases when heated.

[0051] As shown in Figure 6(b), multiple semiconductor chips 10 are placed on the adhesive layer 32 with their first surfaces S1 and connection terminals 10b facing the adhesive layer 32 of the temporary fixing material 35, i.e., in a face-down orientation. Subsequently, as shown in Figure 6(c), a sealing material layer 11 is formed to encapsulate the semiconductor chips 10. The sealing material layer 11 is formed so that the second surface S2 of the semiconductor chip 10 is exposed from the sealing material layer 11. A sealing material layer 11 is formed in which the entire semiconductor chip 10, including the second surface S2, is embedded, and then a part of the sealing material layer 11 may be removed by polishing from the side opposite to the temporary fixing material 35, thereby forming a flat surface in which the second surface S2 of the semiconductor chip 10 is exposed. At this stage, the temporary fixing laminate 45 consists of the temporary fixing material 35, the multiple semiconductor chips 10, and the sealing material layer 11.

[0052] Next, as shown in Figure 6(d), a curable resin film 22 is provided to cover the second surface S2 of the semiconductor chip 10 and the encapsulating layer 11, and as shown in Figure 7(a), the curable resin film 22 and the carrier 20 are bonded together. The bonding conditions can be the same as those in the method illustrated in Figure 3. The curable resin film 22 bonded to the carrier 20 may be cured to form an integrated protective layer 12 (cured curable resin film) that covers the second surface S2 of all of the semiconductor chips 10. The protective layer 12 and the encapsulating layer 11 constitute a sealing portion 15 that seals the semiconductor chip 10 on the temporary fixing material 35. The sealing structure 40 has the semiconductor chip 10 and the sealing portion 15. The temporary fixing laminate 45 at this stage consists of the temporary fixing material 35, the sealing structure 40, and the carrier 20.

[0053] As shown in Figure 7(b), the temporary fixing material 35 is removed from the temporary fixing laminate 45. For example, the adhesive layer 32 may be heated, and the sealing structure 40 may be separated from the adhesive layer 32 whose adhesive strength has decreased due to heating.

[0054] Removing the temporary fixing material 35 exposes the first surface S1 of the semiconductor chip 10. A redistribution layer 13 is formed on the exposed first surface S1. The redistribution layer 13 has an insulating layer 13a and wiring 13b such as copper wiring provided in the insulating layer 13a. Solder balls 14 are provided on the redistribution layer 13.

[0055] As shown in Figure 8(a), the carrier 20 is removed from the temporary fixed laminate 45, which is composed of the carrier 20 and the sealing structure 40. The method for removing the carrier 20 can include irradiating the temporary fixed laminate 45 with light from the carrier 20 side, similar to the method illustrated in Figure 4. By providing the protective layer 12, damage to the sealing structure caused by delamination at the interface between the semiconductor chip 10 and the sealing material layer 11 can be suppressed after the carrier 20 has been removed.

[0056] After the carrier 20 is removed, the remaining encapsulation structure 40 is divided by a method that includes attaching a dicing tape 50 to the protective layer 12, cutting the encapsulation structure 40, which includes multiple semiconductor chips 10, encapsulation portions 15, redistribution layers 13 and solder balls 14, at predetermined locations S to form multiple semiconductor devices 1, and picking up the semiconductor devices 1 from the dicing tape 50, as shown in Figures 8(b) to (e). By dividing the encapsulation structure 40, individual semiconductor devices 1 are obtained.

[0057] In the methods illustrated above, the cured resin film is used for both the function of fixing the semiconductor chip during various processes such as forming the encapsulating layer, thinning the semiconductor chip, and forming the redistribution layer, and as a material that constitutes part of the encapsulating portion that seals the semiconductor chip. Therefore, the method according to this disclosure can significantly simplify the manufacturing process compared to cases where different materials are used for each function. [Examples]

[0058] The present invention will be described in more detail below with reference to examples. However, the present invention is not limited to these examples.

[0059] 1.Raw materials The following ingredients were prepared. thermoplastic resin • Acrylic polymer containing epoxy groups (glass transition temperature: 12°C, weight-average molecular weight: 800,000) epoxy resin • Bisphenol F type liquid epoxy resin: YDF-8170C (product name, Nippon Steel Chemical & Material Co., Ltd.) • Cresol novolac type epoxy resin: N-500P-10 (product name, DIC Corporation) hardening agent • Phenolic resin: PSM-4326 (product name, Gun-ei Chemical Industry Co., Ltd.) • Phenolic resin: MEH-7800M (product name, Meiwa Kasei Co., Ltd.) Silica filler • SC2050-HLG (Product name, Admatex Co., Ltd.) • R972 (Product name, Nippon Aerosil Co., Ltd.) Light absorber • Carbon Black: FP-Black (product name, Sanyo Shikiso Co., Ltd., dispersion containing 30% by mass of carbon black) Coupling agent • (3-mercaptopropyl)trimethoxysilane: A-189 (trade name, Momentive) • 3-Uleidopropyltriethoxysilane: A-1160 (Trade name, Momentive) • Uleidopropyltrialkoxysilane: Z-6119 (product name, Dow Chemical Japan) Curing accelerator • 1-Cyanoethyl-2-phenylimidazole:2PZ-CN (Trade name, Shikoku Chemicals Co., Ltd.)

[0060] 2. Preparation of curable resin film Resin varnishes for forming curable resin films 1-7 were prepared, containing each raw material in the proportions shown in Table 1 and cyclohexanone as the solvent. The total concentration of components other than the solvent in the resin varnish was 40% by mass, based on the mass of the varnish.

[0061] [Table 1]

[0062] Each varnish was applied to a support film, and the coating was dried to form 20 μm thick curable resin films 1 to 7 on the support film. A protective film was placed on the curable resin film to obtain a film material composed of the support film, one of the curable resin films 1 to 7, and the protective film.

[0063] 3. Evaluation of curable resin films Shear viscosity Multiple curable resin films were laminated to create a 1280 μm thick laminated film, which was used as a test specimen. The dynamic viscoelasticity of the test specimen was measured using a shear viscosity analyzer (ARES-G2, manufactured by T.A. Instruments) under the following conditions in the temperature range of 35 to 130°C. Load: 100g Frequency: 1Hz Strain amount: 5% The shear viscosity of the curable resin film at 100°C was measured based on the obtained measurement results.

[0064] Storage modulus Multiple curable resin films were laminated to prepare a laminated film with a thickness of approximately 240 μm. The curable resin films were cured by heating the laminated film at 130°C for 20 minutes, followed by heating at 170°C for 2 hours. The dynamic viscoelasticity of the resulting cured material was measured using a dynamic viscoelasticity measuring device (Rheogel-E4000, manufactured by UBM Corporation) in the range of -80 to 300°C under the following conditions. Sample size: 4mm x 30mm Tension mode Frequency: 10Hz Heating rate: 3°C / min From the obtained measurement results, the storage modulus of the curable resin film at 25°C or 250°C was determined. Table 2 shows the measurement results for shear viscosity and storage modulus.

[0065] [Table 2]

[0066] Tackiness (90-degree peel strength) A curable resin film was bonded to a mirror wafer or glass substrate at 25°C, or while heating to 70°C. A pressure of 0.2 MPa was applied to the curable resin film for bonding. After bonding the curable resin film to the mirror wafer or glass substrate, a support tape (Oji Tape) was attached and the film was left to stand for 2 hours. Next, the 90-degree peel strength was measured by peeling the curable resin film at a 90-degree angle to the main surface of the mirror wafer or glass substrate in a peel test. The peeling speed was 50 mm / second. The measurement results are shown in Table 3. Two measurements were performed when the bonding temperature (bonding temperature) for the curable resin film to the mirror wafer or glass substrate was 25°C. The two measured values ​​are shown in Table 3. When the bonding temperature was 25°C, the variation in the measured values ​​was somewhat large, but it never fell below 10 N / m. In Example 4, when the curable resin film was bonded to the glass substrate at 70°C, the adhesion was too strong, making it impossible to peel off the curable resin film, and thus the 90°C peel strength could not be measured in the peel test.

[0067] [Table 3]

[0068] light transmittance The UV-Vis absorption of curable resin films 1-7 in Examples 1-7 was measured after curing. Figure 9 shows the UV-Vis absorption spectra of the curable resin films in Examples 1 and 2, where the values ​​are shown as relative values ​​based on the transmittance to light at a wavelength of 600 nm. Figure 9 also shows the UV-Vis absorption spectra of the glass substrate. The curable resin film in Example 1 showed a transmittance of 1.01% (relative value) to light at a wavelength of 355 nm. The curable resin film in Example 2 showed a transmittance of 4.76% (relative value) to light at a wavelength of 355 nm.

[0069] Peel test The protective film was peeled off from the film material of Example 1 or 2, and the exposed curable resin film was placed on a glass substrate (60 mm x 60 mm, 0.7 mm thick). The curable resin film and the glass substrate were bonded together using a vacuum laminator. The vacuum laminator settings were set to a temperature of 90°C, a pressure of 0.5 MPa, and a pressurizing time of 60 seconds. The curable resin film was cured by heating at 130°C for 20 minutes, followed by heating at 170°C for 2 hours. On the cured protective layer, which was the cured curable resin film, a sealing material layer containing epoxy resin was formed using a sealing material at 150°C for 300 seconds. The formed sealing material layer was further cured by heating at 150°C for 6 hours. This resulted in an evaluation laminate with a three-layer structure consisting of a glass substrate, a protective layer, and a sealing material layer.

[0070] A UV laser beam with a frequency of 55 kHz and an output of 316 mW was irradiated onto the evaluation laminate from the glass substrate side. In the case of the evaluation laminate formed using the film material of Example 1, the glass substrate spontaneously peeled off from the protective layer without the need for stress after laser irradiation. In the case of the evaluation laminate formed using the film material of Example 2, the glass substrate peeled off from the protective layer by inserting a razor blade into the interface. [Explanation of symbols]

[0071] 1...Semiconductor device, 3A...Support film, 3B...Protective film, 10...Semiconductor chip, 10a...Chip body, 10b...Connection terminal, 11...Sealing material layer, 12...Protective layer (cured curable resin film), 13...Redistribution layer, 14...Solder ball, 15...Sealing part, 20...Carrier, 22...Curable resin film, 30...Carrier, 32...Adhesive layer, 35...Temporary fixing material, 40...Sealing structure, 45...Temporary fixing laminate, 50...Dicing tape, L...Light, S1...First surface, S2...Second surface.

Claims

1. To form a temporary fixed laminate comprising a carrier and a sealing structure provided on the main surface of the carrier, which includes a plurality of semiconductor chips and a sealing portion that seals the plurality of semiconductor chips, Removing the carrier from the temporary fixed laminate, A tacky curable resin film used for manufacturing semiconductor devices by a method including, The curable resin film comprises a thermoplastic resin, a curable resin, a light absorber, and a silica filler, wherein the silica filler content is 5 to 60% by mass based on the mass of the curable resin film. The cured curable resin film exhibits a transmittance of 20% or less for light with a wavelength of 355 nm. The semiconductor chip comprises a chip body having a first surface and a second surface on the opposite side thereof, and a connection terminal provided on the first surface. The sealing portion comprises an integral protective layer covering the second surface of the plurality of semiconductor chips, and a sealing material layer that seals the plurality of semiconductor chips together with the protective layer. The protective layer is a cured curable resin film. In the method used to manufacture the semiconductor device, forming the temporary fixed laminate involves bonding the curable resin film to the carrier, In the method in which the curable resin film is used to manufacture the semiconductor device, the carrier is removed from the temporary fixed laminate by separating the protective layer from the carrier. The protective layer is a permanent film provided on the semiconductor device. Curable resin film.

2. The curable resin film according to claim 1, used for manufacturing a semiconductor device by a method further comprising cutting the sealing structure, which comprises the plurality of semiconductor chips and the sealing portion including the protective layer, thereby forming a plurality of semiconductor devices.

3. A curable resin film according to claim 1 or 2, used for manufacturing the semiconductor device by the method further comprising engraving the surface of the protective layer by irradiation with laser light.

4. The curable resin film according to any one of claims 1 to 3, wherein when the curable resin film is bonded to a glass substrate at a temperature of 25°C, the 90-degree peel strength between the curable resin film and the glass substrate is 10 N / m or more at 25°C.

5. The curable resin film is used to form the temporary fixed laminate in the method for manufacturing the semiconductor device, A plurality of semiconductor chips are arranged on the surface of the curable resin film bonded to the carrier that is opposite to the carrier, with the second surface facing the curable resin film. By curing the curable resin film, multiple semiconductor chips are fixed onto the protective layer which is the cured curable resin film. The sealing material layer is formed on the protective layer, thereby forming the sealing portion having the protective layer and the sealing material layer. A curable resin film according to any one of claims 1 to 4, further comprising the above in this order.

6. The curable resin film is used to form the temporary fixed laminate in the method for manufacturing the semiconductor device, A temporary fixing laminate is formed having a temporary fixing material, a plurality of semiconductor chips temporarily fixed on the temporary fixing material with their first surfaces facing the temporary fixing material, and a sealing material layer that seals the plurality of semiconductor chips on the temporary fixing material, wherein the second surfaces of the plurality of semiconductor chips are exposed from the sealing material layer. The curable resin film is provided to cover the second surface and the sealing material layer, The curable resin film is cured to form the protective layer, Removing the temporary fixing material from the temporary fixing laminate, This further includes in this order, The curable resin film according to any one of claims 1 to 4, wherein, in the method in which the curable resin film is used to manufacture the semiconductor device, the curable resin film covering the second surface and the sealing layer is bonded to the carrier.

7. A curable resin film according to any one of claims 1 to 6, wherein the glass transition temperature of the thermoplastic resin is -40 to 40°C.

8. A curable resin film according to any one of claims 1 to 7, which is substantially free of a silicone compound having a polysiloxane chain.

9. The curable resin film according to any one of claims 1 to 8, wherein the shear viscosity of the curable resin film is 5,000 to 100,000 Pa·s at 100°C.

10. The curable resin film according to any one of claims 1 to 9, wherein the storage modulus of the curable resin film after curing is 300 to 6000 MPa at 25°C and 0.1 to 200 MPa at 250°C.

11. A film material for manufacturing semiconductor devices, comprising a support film and a curable resin film according to any one of claims 1 to 10 provided on the support film.

12. To form a temporary fixed laminate comprising a carrier, and a sealing structure provided on the main surface of the carrier, which includes a plurality of semiconductor chips and a sealing portion that seals the plurality of semiconductor chips, Removing the carrier from the temporary fixed laminate, A method for manufacturing a semiconductor device, including, The semiconductor chip comprises a chip body having a first surface and a second surface on the opposite side thereof, and a connection terminal provided on the first surface. The sealing portion comprises an integral protective layer covering the second surface of the plurality of semiconductor chips, and a sealing material layer that seals the plurality of semiconductor chips together with the protective layer. The protective layer is a cured, curable resin film. The temporary fixed laminate is formed by a method that includes bonding the curable resin film and the carrier, By separating the protective layer from the carrier, the carrier is removed from the temporary fixed laminate. The protective layer is a permanent film provided on the semiconductor device, The curable resin film comprises a thermoplastic resin, a curable resin, a light absorber, and a silica filler, wherein the silica filler content is 5 to 60% by mass based on the mass of the curable resin film. A method for manufacturing a semiconductor device wherein the cured curable resin film exhibits a transmittance of 20% or less to light with a wavelength of 355 nm.

13. The method according to claim 12, further comprising cutting the sealing structure, which includes the plurality of semiconductor chips and the sealing portion including the protective layer, thereby forming a plurality of semiconductor devices.

14. The method according to claim 12 or 13, further comprising engraving the surface of the protective layer by irradiation with laser light.

15. The aforementioned temporary fixed laminate, A plurality of semiconductor chips are arranged on the surface of the curable resin film bonded to the carrier that is opposite to the carrier, with the second surface facing the curable resin film. By curing the curable resin film, a plurality of semiconductor chips are fixed onto the protective layer which is the cured curable resin film. The sealing material layer is formed on the protective layer, thereby forming the sealing portion having the protective layer and the sealing material layer. The method according to any one of claims 12 to 14, further comprising the above in this order.

16. The aforementioned temporary fixed laminate, A temporary fixing laminate is formed having a temporary fixing material, a plurality of semiconductor chips temporarily fixed on the temporary fixing material with their first surfaces facing the temporary fixing material, and a sealing material layer that seals the plurality of semiconductor chips on the temporary fixing material, wherein the second surfaces of the plurality of semiconductor chips are exposed from the sealing material layer. The curable resin film is provided to cover the second surface and the sealing material layer, The curable resin film is cured to form the protective layer, Removing the temporary fixing material from the temporary fixing laminate, Formed by a method that further includes in this order, The method according to any one of claims 12 to 14, wherein the curable resin film covering the second surface and the sealing material layer and the carrier are bonded together.

17. The method according to any one of claims 12 to 16, wherein the glass transition temperature of the thermoplastic resin is -40 to 40°C.

18. The method according to any one of claims 12 to 17, wherein the shear viscosity of the curable resin film is 5,000 to 1,000,000 Pa·s at 100°C.

19. The method according to any one of claims 12 to 18, wherein the storage modulus of the curable resin film after curing is 300 to 6000 MPa at 25°C and 0.1 to 200 MPa at 250°C.

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