Substrate processing apparatus and substrate processing method

Abstract

To provide a technology capable of effectively removing sediment within a plasma box.SOLUTION: A substrate processing apparatus comprises: a processing container which can be decompressed; a plasma box the inside of which communicates with the inside of the processing container and in which plasma is produced; a first gas nozzle which is provided within the processing container and into which cleaning gas is introduced; and a second gas nozzle which is provided within the plasma box and the inside of which can be adjusted to negative pressure with respect to the inside of the processing container.SELECTED DRAWING: Figure 3

Description

Technical Field

[0006] ,

[0004] , , , , , , , , , , , , , , , , , ,

[0003] , , , ,<0​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​This is a schematic longitudinal cross-sectional view showing a substrate processing apparatus according to an embodiment. [Figure 2] This is a schematic cross-sectional view showing a substrate processing apparatus according to an embodiment. [Figure 3] This figure shows the gas system in the substrate processing apparatus. [Figure 4] This diagram shows the gas flow during the film deposition process. [Figure 5] This diagram shows the gas flow during the plasma box cleaning process. [Figure 6] This diagram shows the gas flow during the plasma box cleaning process. [Figure 7] This diagram shows the gas flow during the chamber cleaning process. [Figure 8] This is a flowchart showing a substrate processing method according to the first example of the embodiment. [Figure 9] This is a flowchart showing a substrate processing method according to a second embodiment. [Modes for carrying out the invention]

[0008] Hereinafter, exemplary embodiments of the present disclosure, not limited to those described herein, will be described with reference to the attached drawings. In all attached drawings, identical or corresponding members or components are denoted by the same or corresponding reference numerals, and redundant descriptions are omitted.

[0009] [Substrate Processing Equipment] The substrate processing apparatus 1 according to the embodiment will be described with reference to Figures 1 to 3. Figure 1 is a schematic longitudinal cross-sectional view showing the substrate processing apparatus 1 according to the embodiment. Figure 2 is a schematic transverse cross-sectional view of the substrate processing apparatus 1 according to the embodiment. Figure 3 is a diagram showing the gas system in the substrate processing apparatus 1 of Figure 1.

[0010] The substrate processing apparatus 1 comprises a processing container 2, a gas supply unit 20, a plasma generation unit 30, an exhaust unit 40, a heating unit 50, and a control unit 90.

[0011] The processing container 2 can be depressurized inside. The processing container 2 has a ceilinged cylindrical shape with an open bottom end. The processing container 2 is formed of, for example, quartz. A cylindrical manifold 3 is connected to the open bottom end of the processing container 2 via a seal member 4. The manifold 3 is formed of a metal material such as stainless steel. The seal member 4 is, for example, an O-ring.

[0012] The manifold 3 supports the bottom end of the processing container 2. The boat 5 holds a plurality of substrates W in a shelf-like manner in a horizontal posture. The number of substrates W is, for example, 25 to 200. The boat 5 is inserted into the processing container 2 from below the manifold 3. The boat 5 is formed of, for example, quartz. The boat 5 has a plurality of rods 6. The boat 5 holds a plurality of substrates W by grooves (not shown) formed in each rod 6. The number of rods 6 is, for example, three.

[0013] The boat 5 is placed on the table 8 via a heat-insulating cylinder 7 formed of quartz. The table 8 is supported on the rotating shaft 10. The rotating shaft 10 penetrates a lid 9 that opens and closes the opening at the bottom end of the manifold 3. The lid 9 is formed of a metal material such as stainless steel.

[0014] A magnetic fluid seal 11 is provided at the penetrating portion of the rotating shaft 10. The magnetic fluid seal 11 hermetically seals the rotating shaft 10 and supports it rotatably. A seal member 12 for maintaining the airtightness inside the processing container 2 is provided between the peripheral portion of the lid 9 and the bottom end of the manifold 3. The seal member 12 is, for example, an O-ring.

[0015] The rotating shaft 10 is attached to the tip of an arm 13 supported by a lifting mechanism (not shown) such as a boat elevator. The boat 5, the heat-insulating cylinder 7, the table 8, the lid 9, and the rotating shaft 10 are lifted and lowered integrally and inserted into and removed from the processing container 2.

[0016] The processing container 2 has an opening 2a in a part of its side wall. The opening 2a is formed to be elongated in the vertical direction so as to cover all the substrates W held in the boat 5 in the vertical direction. The processing container 2 has an exhaust port 2b in the side wall facing the opening 2a. The exhaust port 2b is formed to be vertically elongated corresponding to the boat 5.

[0017] The gas supply unit 20 has a plurality of gas nozzles 21 to 25. Each of the gas nozzles 21 to 25 is formed of, for example, quartz.

[0018] The gas nozzle 21 has an L-shaped configuration that penetrates the side wall of the manifold 3 inward and bends upward to extend vertically. The vertical portion of the gas nozzle 21 is provided inside the processing container 2. A plurality of gas holes 21a are provided along the vertical direction in the vertical portion of the gas nozzle 21. The plurality of gas holes 21a are provided, for example, over the vertical length corresponding to the substrate support range of the boat 5. Each gas hole 21a discharges the gas introduced into the gas nozzle 21 horizontally.

[0019] A gas supply flow path L11 is connected to the gas nozzle 21. In the gas supply flow path L11, an on-off valve V11 and a supply source G11 of the first reaction gas are provided in order from the gas nozzle 21 side. The first reaction gas may be, for example, a silicon-containing gas such as dichlorosilane (DCS) or hexachlorodisilane (HCDS). When the on-off valve V11 is opened, the first reaction gas from the supply source G11 is introduced into the gas nozzle 21 through the gas supply flow path L11.

[0020] A gas supply flow path L12 is connected to the gas supply flow path L11 between the gas nozzle 21 and the on-off valve V11. In the gas supply flow path L12, an on-off valve V12 and a supply source G12 of the cleaning gas are provided in order from the gas nozzle 21 side. The cleaning gas may be, for example, fluorine gas (F2). When the on-off valve V12 is opened, the cleaning gas from the supply source G12 is introduced into the gas nozzle 21 through the gas supply flow paths L12 and L11. An inert gas supply source (not shown) may be provided in the gas supply flow path L12. The inert gas may be, for example, nitrogen gas (N2).

[0021] A nozzle exhaust passage L13 is connected to the gas supply passage L11 between the gas nozzle 21 and the on-off valve V11. The nozzle exhaust passage L13 is connected to the exhaust piping 42 between the pressure control valve 43 and the vacuum pump 44. On-off valves V13 and V14 are provided in the nozzle exhaust passage L13. When on-off valves V13 and V14 are opened, the vacuum pump 44 exhausts the gas nozzle 21, the gas supply passage L11, and the nozzle exhaust passage L13. For example, if the pressure control valve 43 is closed and on-off valves V13 and V14 are opened, the gas nozzle 21 is exhausted via the nozzle exhaust passage L13 without the processing container 2 being exhausted via the exhaust piping 42. This adjusts the pressure inside the gas nozzle 21 to a negative pressure relative to the processing container 2. In this way, the gas nozzle 21 can be adjusted to a negative pressure relative to the processing container 2.

[0022] The gas nozzle 22 has an L-shape, which penetrates the side wall of the manifold 3 inward, is bent upward, and extends vertically. The vertical portion of the gas nozzle 22 is provided in the plasma generation space P. The vertical portion of the gas nozzle 22 is provided with a plurality of gas holes 22a along the vertical direction. The plurality of gas holes 22a are provided over a vertical length corresponding to, for example, the substrate support area of ​​the boat 5. Each gas hole 22a discharges the gas introduced into the gas nozzle 22 horizontally.

[0023] A gas supply channel L21 is connected to the gas nozzle 22. The gas supply channel L21 is equipped with, in order from the gas nozzle 22 side, an on-off valve V21 and a supply source G21 for a second reaction gas. The second reaction gas is a gas that reacts with the first reaction gas to produce a reaction product. The second reaction gas may be, for example, ammonia gas (NH3). When the on-off valve V21 is opened, the second reaction gas from the supply source G21 is introduced to the gas nozzle 22 through the gas supply channel L21.

[0024] A gas supply passage L22 is connected to a gas supply passage L21 between the gas nozzle 22 and the on-off valve V21. The on-off valve V22 and an inert gas supply source G22 are connected to the gas supply passage L22 in order from the gas nozzle 22 side. The inert gas is, for example, nitrogen gas. When the on-off valve V22 is opened, the inert gas from the supply source G22 is introduced to the gas nozzle 22 through the gas supply passages L22 and L21.

[0025] A nozzle exhaust passage L23 is connected to the gas supply passage L21 between the gas nozzle 22 and the on-off valve V21. The nozzle exhaust passage L23 is connected to the exhaust piping 42 between the pressure control valve 43 and the vacuum pump 44. On-off valves V23 and V24 are provided in the nozzle exhaust passage L23. When on-off valves V23 and V24 are opened, the vacuum pump 44 exhausts the gas nozzle 22, the gas supply passage L21, and the nozzle exhaust passage L23. For example, if the pressure control valve 43 is closed and on-off valves V23 and V24 are opened, the gas nozzle 22 is exhausted via the nozzle exhaust passage L23 without the processing container 2 being exhausted via the exhaust piping 42. This adjusts the pressure inside the gas nozzle 22 to a negative pressure relative to the processing container 2. In this way, the gas nozzle 22 can be adjusted to a negative pressure relative to the processing container 2.

[0026] The gas nozzle 23 has an L-shape, penetrating the side wall of the manifold 3 inward, bending upward, and extending vertically. The upper end of the gas nozzle 23 is located below the lower end of the boat 5. The gas nozzle 23 has an opening at its upper end. The gas nozzle 23 discharges the gas introduced into the gas nozzle 23 upward from the opening at its upper end.

[0027] A gas supply channel L31 is connected to the gas nozzle 23. The gas supply channel L31 is equipped with an on-off valve V31 and a cleaning gas supply source G31, in that order from the gas nozzle 23 side. The cleaning gas may be, for example, fluorine gas. When the on-off valve V31 is opened, the cleaning gas from the supply source G31 is introduced to the gas nozzle 23 through the gas supply channel L31.

[0028] A nozzle exhaust passage L33 is connected to the gas supply passage L31 between the gas nozzle 23 and the on-off valve V31. The nozzle exhaust passage L33 is connected to the nozzle exhaust passage L13. An on-off valve V33 is provided in the nozzle exhaust passage L33. When the on-off valves V33 and V14 are opened, the gas nozzle 23, the gas supply passage L31, and the nozzle exhaust passage L33 are exhausted. For example, if the pressure control valve 43 is closed and the on-off valves V33 and V14 are opened, the gas nozzle 23 is exhausted via the nozzle exhaust passage L33 without the processing container 2 being exhausted via the exhaust piping 42. This adjusts the pressure inside the gas nozzle 23 to a negative pressure relative to the processing container 2. In this way, the gas nozzle 23 can be adjusted to a negative pressure relative to the processing container 2.

[0029] The gas nozzle 24 has an L-shape, penetrating the side wall of the manifold 3 inward, bending upward, and extending vertically. The gas nozzle 24 is not shown in Figure 3. The upper end of the gas nozzle 24 is located below the lower end of the boat 5. The gas nozzle 24 has an opening at its upper end. The gas nozzle 24 discharges the gas introduced into it upward from the opening at its upper end. A cleaning gas such as hydrogen fluoride gas (HF) is introduced into the gas nozzle 24.

[0030] The gas nozzle 25 has a straight pipe shape that extends horizontally through the side wall of the manifold 3. The tip of the gas nozzle 25 is located inside the processing container 2. The gas nozzle 25 has an opening at its tip. The gas nozzle 25 discharges the gas introduced into the gas nozzle 25 horizontally from the opening at its tip. An inert gas such as nitrogen gas is introduced into the gas nozzle 25.

[0031] The plasma generation unit 30 includes a plasma box 31, a pair of electrodes 32, a power supply line 33, an RF power supply 34, and an insulating cover 35.

[0032] The plasma box 31 has a substantially U-shape in horizontal cross-section. The plasma box 31 is airtightly attached to the outer wall of the processing container 2 so as to cover the opening 2a. The plasma box 31 extends vertically along the side wall of the processing container 2. The plasma box 31 forms a plasma generation space P inside. The plasma generation space P communicates with the inside of the processing container 2. The plasma box 31 is made of, for example, quartz.

[0033] Each pair of electrodes 32 has an elongated shape and is positioned opposite each other vertically on the outer surfaces of the walls on both sides of the plasma box 31. A power supply line 33 is connected to each electrode 32.

[0034] The power supply line 33 electrically connects each electrode 32 to the RF power supply 34.

[0035] The RF power supply 34 is electrically connected to each electrode 32 via the feed line 33. The RF power supply 34 supplies RF power of a predetermined frequency to the pair of electrodes 32. As a result, plasma is generated in the plasma generation space P from the second reaction gas discharged from the gas nozzle 22. The predetermined frequency is, for example, 13.56 MHz.

[0036] The insulating cover 35 is attached to the outside of the plasma box 31 so as to cover the plasma box 31. Inside the insulating cover 35, a refrigerant passage (not shown) through which the refrigerant flows may be provided. In this case, each electrode 32 can be cooled. Inside the insulating cover 35, a shield (not shown) may be provided to cover the electrodes 32. The shield is made of a good conductor such as metal and is grounded.

[0037] The exhaust section 40 includes an exhaust port cover 41, exhaust piping 42, a pressure control valve 43, and a vacuum pump 44.

[0038] The exhaust port cover 41 has a substantially U-shape in horizontal cross-section. The exhaust port cover 41 is airtightly attached to the outer wall of the processing container 2 so as to cover the exhaust port 2b. The exhaust port cover 41 extends vertically along the side wall of the processing container 2.

[0039] The exhaust piping 42 is located below the exhaust port cover 41. The exhaust piping 42 is equipped with a pressure control valve 43 and a vacuum pump 44, in that order from the processing container 2 side.

[0040] The pressure control valve 43 controls the pressure inside the processing container 2.

[0041] The vacuum pump 44 evacuates the inside of the processing container 2 via the exhaust pipe 42. The vacuum pump 44 evacuates the inside of the gas nozzle 21 via the nozzle exhaust passage L13. The vacuum pump 44 evacuates the inside of the gas nozzle 22 via the nozzle exhaust passage L23. The vacuum pump 44 evacuates the inside of the gas nozzle 23 via the nozzle exhaust passage L33.

[0042] The heating section 50 includes a heater 51. The heater 51 has a cylindrical shape with a ceiling that surrounds the processing container 2 on its radially outer side and covers the ceiling of the processing container 2. The heater 51 heats each substrate W housed in the processing container 2 by heating the sides and ceiling of the processing container 2.

[0043] The control unit 90 controls the operation of each part of the substrate processing apparatus 1. The control unit 90 may be, for example, a computer. The computer program that controls the operation of each part of the substrate processing apparatus 1 is stored in a storage medium. The storage medium may be a flexible disk, compact disk, hard disk, flash memory, DVD, etc.

[0044] [Various processes] This section describes the various processes performed in the substrate processing apparatus 1.

[0045] (Film deposition process) Referring to Figure 4, the gas flow when a film is deposited on the substrate W inside the processing container 2 (hereinafter referred to as "film deposition process") will be explained. Figure 4 is a diagram showing the gas flow during the film deposition process. In Figure 4, open valves are shown in black, and closed valves are shown in white. In Figure 4, the gas flow path is shown by a thick solid line, and the direction of gas flow is indicated by an arrow.

[0046] The film deposition process is carried out, for example, with a boat 5 containing multiple substrates W housed in a processing container 2. During the film deposition process, the on-off valves V11, V21 and pressure control valve 43 are opened, and the on-off valves V12, V13, V14, V22, V23, V24, V31, and V33 are closed. As a result, the first reaction gas is discharged from the gas nozzle 21 into the processing container 2, and the second reaction gas is discharged from the gas nozzle 22 into the plasma generation space P. During the film deposition process, RF power is supplied from the RF power supply 34 to a pair of electrodes 32. As a result, plasma is generated from the second reaction gas in the plasma generation space P.

[0047] In the film deposition process, a film is formed on the substrate W by reaction products generated by the reaction of the first reaction gas and the second reaction gas. During the film deposition process, a film of reaction products is also deposited on the inner wall of the processing container 2, inside the gas nozzles 21 and 22, and inside the plasma box 31.

[0048] In addition, during the film formation process, the supply of the first reaction gas from the gas nozzle 21, the supply of the second reaction gas from the gas nozzle 22, and the supply of RF power from the RF power supply 34 may be performed alternately, with the supply of inert gas in between.

[0049] (Plasma box cleaning process) Referring to Figures 5 and 6, the gas flow during the process of removing deposits inside the plasma box 31 (hereinafter referred to as "plasma box cleaning process") will be explained. Figures 5 and 6 are diagrams showing the gas flow during the plasma box cleaning process. In Figure 5, open valves are shown in black, and closed valves are shown in white. In Figure 5, the gas flow path is shown by a thick solid line. In Figures 5 and 6, the direction of gas flow is indicated by an arrow.

[0050] The plasma box cleaning process is performed, for example, with an empty boat 5 containing no substrate W inside the processing container 2. In this case, when removing the deposits inside the processing container 2, the deposits accumulated on the empty boat 5 can also be removed. If the deposits on boat 5 are not to be removed, the plasma box cleaning process may be performed with the boat 5 not inside the processing container 2.

[0051] During the plasma box cleaning process, the on-off valves V12, V23, V24, and V31 are opened, and the on-off valves V11, V13, V14, V21, V22, V33 and the pressure control valve 43 are closed.

[0052] Specifically, with the inside of the processing container 2 under reduced pressure and all on-off valves and pressure control valve 43 in the closed state, on-off valve V24 is opened first. Next, on-off valve V23 is opened. As a result, the inside of the gas nozzle 22 is evacuated by the vacuum pump 44, and the inside of the plasma box 31 becomes negatively pressurized relative to the inside of the processing container 2. Next, on-off valves V12 and V31 are opened, and cleaning gas is discharged into the processing container 2 from the gas nozzles 21 and 23. This creates a flow in which the cleaning gas discharged into the processing container 2 from the gas nozzles 21 and 23 is drawn into the gas nozzle 22. This flow of cleaning gas allows for the effective removal of deposits inside the plasma box 31 with a small flow rate of cleaning gas. As a result, the generation of particles caused by deposits inside the plasma box 31 can be suppressed, and the maintenance cycle of the substrate processing apparatus 1 can be extended.

[0053] In the plasma box cleaning process, cleaning gas is discharged into the processing container 2 from multiple gas holes 21a of the gas nozzle 21, and the discharged cleaning gas is drawn into multiple gas holes 22a of the gas nozzle 22. In this case, a horizontal flow of cleaning gas is formed from the gas nozzle 21 toward the gas nozzle 22. Therefore, deposits can be removed uniformly in the vertical direction within the plasma box 31.

[0054] In addition, during the plasma box cleaning process, the cleaning gas may be discharged from only one of the gas nozzles 21 and 23. Alternatively, the cleaning gas may be discharged from the gas nozzle 24 during the plasma box cleaning process.

[0055] Incidentally, if the gas nozzle 22 is not exhausted, a flow of cleaning gas into the gas nozzle 22 is not formed, making it easy for deposits in the plasma box 31 to remain unremoved. Removing the deposits remaining in the plasma box 31 requires a large flow rate of cleaning gas.

[0056] Alternatively, cleaning gas can be discharged from the gas nozzle 22 into the plasma generation space P to remove deposits in the plasma box 31. In this case, the cleaning gas discharged horizontally from the multiple gas holes 22a of the gas nozzle 22 tends to flow towards the exhaust port 2b of the processing container 2, making it difficult to remove deposits in the plasma box 31.

[0057] (Chamber cleaning process) Referring to Figure 7, the gas flow during the process of removing sediment in the processing container 2 (hereinafter referred to as the "chamber cleaning process") will be explained. Figure 7 is a diagram showing the gas flow during the chamber cleaning process. In Figure 7, open valves are shown in black, and closed valves are shown in white. In Figure 7, the gas flow path is shown by a thick solid line, and the direction of gas flow is indicated by an arrow.

[0058] The chamber cleaning process is performed, for example, with an empty boat 5 containing no substrate W inside the processing container 2. In this case, when removing the deposits inside the processing container 2, the deposits accumulated on the empty boat 5 can also be removed. If the deposits on the boat 5 are not to be removed, the chamber cleaning process may be performed with the boat 5 not inside the processing container 2.

[0059] During the chamber cleaning process, the on-off valve V31 and the pressure control valve 43 are opened, while the on-off valves V11, V12, V13, V14, V21, V22, V23, V24, and V33 are closed. As a result, cleaning gas is discharged from the gas nozzle 23 into the processing container 2, and the processing container 2 is evacuated by the vacuum pump 44.

[0060] During the chamber cleaning process, deposits are removed from the processing container 2 and the empty boat 5. However, since the gas nozzle 22 is not evacuated during the chamber cleaning process, cleaning gas is not drawn into the plasma box 31. Therefore, deposits inside the plasma box 31 are difficult to remove.

[0061] In the chamber cleaning process, cleaning gas may be discharged from the gas nozzle 21 into the processing container 2. However, from the viewpoint of suppressing corrosion inside the gas nozzle 21 due to prolonged exposure of the inside of the gas nozzle 21 to the cleaning gas, it is preferable not to discharge cleaning gas from the gas nozzle 21 into the processing container 2.

[0062] During the chamber cleaning process, cleaning gas may be discharged from the gas nozzle 24 into the processing container 2.

[0063] [Substrate processing method] Referring to Figure 8, a substrate processing method according to the first embodiment will be described. Figure 8 is a flowchart of the substrate processing method according to the first embodiment. Hereinafter, the substrate processing method according to the first embodiment will be described using the case where it is carried out in the aforementioned substrate processing apparatus 1 as an example.

[0064] As shown in Figure 8, the substrate processing method according to the first embodiment includes a step S11 for performing a film formation process, a step S12 for making a determination, and a step S13 for performing a plasma box cleaning process and a chamber cleaning process.

[0065] In step S11, first, the control unit 90 controls the operation of each part of the substrate processing apparatus 1 to house the boat 5 holding multiple substrates W inside the processing container 2. Next, the control unit 90 opens the pressure control valve 43 to evacuate the processing container 2 and reduce the pressure. Next, the control unit 90 controls the heating unit 50 so that the processing container 2 reaches a desired set temperature and controls the pressure control valve 43 so that the processing container 2 reaches a desired pressure. Next, the control unit 90 controls the operation of each part of the substrate processing apparatus 1 to perform the aforementioned film deposition process. Next, the control unit 90 supplies inert gas into the processing container 2 to purge the processing container 2, and then controls the operation of each part of the substrate processing apparatus 1 to increase the pressure inside the processing container 2 to atmospheric pressure. Finally, the control unit 90 controls the operation of each part of the substrate processing apparatus 1 to unload the boat 5 from the processing container 2.

[0066] Step S12 is performed after step S11. In step S12, the control unit 90 determines whether or not step S11 has been performed the set number of times. If the number of executions has not reached the set number (NO in step S12), the control unit 90 controls the operation of each part of the substrate processing apparatus 1 to perform step S11 again. If the number of executions has reached the set number (YES in step S12), the control unit 90 proceeds to step S13. In this way, step S11 is repeated until the number of executions reaches the set number.

[0067] Step S13 is performed after step S12. In step S13, first, the control unit 90 controls the operation of each part of the substrate processing apparatus 1 to house the empty boat 5 in the processing container 2. Next, the control unit 90 opens the pressure control valve 43 to evacuate the processing container 2 and reduce the pressure. Next, the control unit 90 controls the heating unit 50 so that the processing container 2 reaches a desired set temperature and controls the pressure control valve 43 so that the processing container 2 reaches a desired pressure. Next, the control unit 90 controls the operation of each part of the substrate processing apparatus 1 to perform the plasma box cleaning process and the chamber cleaning process described above in that order. The plasma box cleaning process is performed, for example, under conditions where the flow rate of cleaning gas discharged into the processing container 2 is less than that of the chamber cleaning process. Next, the control unit 90 supplies inert gas into the processing container 2 to purge the processing container 2, and then controls the operation of each part of the substrate processing apparatus 1 to increase the pressure inside the processing container 2 to atmospheric pressure. Finally, the control unit 90 controls the operation of each part of the substrate processing apparatus 1 to remove the boat 5 from the processing container 2. This concludes the substrate processing method according to the first embodiment.

[0068] As described above, in the substrate processing method according to the first embodiment, the plasma box cleaning process and the chamber cleaning process are performed once each time the number of film deposition processes reaches a set number.

[0069] In the substrate processing method according to the first embodiment, the case described in step S13 is that the chamber cleaning process is performed without changing the temperature and pressure inside the processing container 2 after the plasma box cleaning process, but the method is not limited to this. For example, the chamber cleaning process may be performed after changing at least one of the temperature and pressure inside the processing container 2 after the plasma box cleaning process.

[0070] Referring to Figure 9, a substrate processing method according to a second embodiment will be described. Figure 9 is a flowchart of the substrate processing method according to a second embodiment. Hereinafter, the substrate processing method according to a second embodiment will be described using the case where it is carried out in the aforementioned substrate processing apparatus 1 as an example.

[0071] As shown in Figure 9, the substrate processing method according to the second embodiment includes a step S21 for performing a film formation process, a step S22 for making a determination, a step S23 for performing a plasma box cleaning process, a step S24 for making a determination, and a step S25 for performing a plasma box cleaning process and a chamber cleaning process.

[0072] Process S21 may be the same as process S11.

[0073] Step S22 is performed after step S21. In step S22, the control unit 90 determines whether or not step S21 has been performed a first time. If the number of executions has not reached the first time (NO in step S22), the control unit 90 controls the operation of each part of the substrate processing apparatus 1 to perform step S21 again. If the number of executions has reached the first time (YES in step S22), the control unit 90 proceeds to step S23. In this way, step S21 is repeated until the number of executions reaches the first time.

[0074] Step S23 is performed after step S22. In step S23, first, the control unit 90 controls the operation of each part of the substrate processing apparatus 1 to house the empty boat 5 in the processing container 2. Next, the control unit 90 opens the pressure control valve 43 to evacuate the processing container 2 and reduce the pressure. Next, the control unit 90 controls the heating unit 50 so that the processing container 2 reaches a desired set temperature and controls the pressure control valve 43 so that the processing container 2 reaches a desired pressure. Next, the control unit 90 controls the operation of each part of the substrate processing apparatus 1 to perform the plasma box cleaning process described above. Next, the control unit 90 supplies inert gas into the processing container 2 to purge the processing container 2, and then controls the operation of each part of the substrate processing apparatus 1 to increase the pressure inside the processing container 2 to atmospheric pressure. Finally, the control unit 90 controls the operation of each part of the substrate processing apparatus 1 to remove the boat 5 from the processing container 2.

[0075] Step S24 is performed after step S23. In step S24, the control unit 90 determines whether steps S21 through S23 have been performed a second time. If the number of executions has not reached the second time (NO in step S24), the control unit 90 controls the operation of each part of the substrate processing apparatus 1 to perform steps S21 through S23 again. If the number of executions has reached the second time (YES in step S24), the control unit 90 proceeds to step S25. In this way, steps S21 through S23 are repeated until the number of executions reaches the second time.

[0076] Process S25 is performed after process S24. Process S25 may be the same as process S13.

[0077] As described above, in the substrate processing method according to the second embodiment, a plasma box cleaning process is performed once each time the number of times the film deposition process is performed reaches the first number. Furthermore, a plasma box cleaning process and a chamber cleaning process are performed once each each time the number of times the plasma box cleaning process is performed reaches the second number.

[0078] In the above embodiment, gas nozzle 21 is an example of a first gas nozzle, gas nozzle 22 is an example of a second gas nozzle, and gas nozzle 23 is an example of a third gas nozzle.

[0079] The embodiments disclosed herein should be considered in all respects to be illustrative and not restrictive. The above embodiments may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0080] 1. Substrate processing device 2 Processing container 21 Gas nozzle 22 Gas Nozzles 31 Plasma Box

Claims

1. A processing vessel capable of reducing pressure, A plasma box whose interior is in communication with the processing container and in which plasma is generated, A first gas nozzle is provided inside the processing container, into which cleaning gas is introduced, A second gas nozzle is provided inside the plasma box, and its internal pressure can be adjusted to a negative pressure relative to the processing container. A substrate processing apparatus comprising:

2. An exhaust pipe connected to the processing container and used to exhaust air from inside the processing container, A nozzle exhaust passage is connected to the second gas nozzle and the exhaust piping, and exhausts the gas from inside the second gas nozzle without passing through the processing container, Equipped with, The substrate processing apparatus according to claim 1.

3. The exhaust piping is equipped with a pressure control valve and a vacuum pump, The nozzle exhaust passage is connected to the exhaust piping between the pressure control valve and the vacuum pump. The substrate processing apparatus according to claim 2.

4. The first gas nozzle is introduced with a first reaction gas inside. The second gas nozzle is into which a second reaction gas that reacts with the first reaction gas is introduced. The substrate processing apparatus according to claim 1.

5. The first gas nozzle and the second gas nozzle each have a plurality of gas holes for horizontally discharging gas. The substrate processing apparatus according to claim 1.

6. The processing container is provided with a third gas nozzle into which the cleaning gas is introduced, The third gas nozzle has an opening that discharges gas upward, The substrate processing apparatus according to claim 5.

7. The substrate processing apparatus includes a control unit that controls the supply of the cleaning gas from the first gas nozzle into the processing container while the inside of the second gas nozzle is under negative pressure, The substrate processing apparatus according to claim 1.

8. A processing vessel capable of reducing pressure, A plasma box whose interior is in communication with the processing container and in which plasma is generated, A first gas nozzle is provided inside the processing container, into which cleaning gas is introduced, A second gas nozzle is provided inside the plasma box, and its internal pressure can be adjusted to a negative pressure relative to the processing container. A substrate processing method performed in a substrate processing apparatus comprising: (a) The process includes supplying the cleaning gas from the first gas nozzle into the processing container while the inside of the second gas nozzle is under negative pressure, thereby removing deposits in the plasma box. Substrate processing method.

9. The substrate processing apparatus is provided in the processing container and includes a third gas nozzle into which the cleaning gas is introduced, and the third gas nozzle has an opening that discharges gas upward. (b) A step of supplying the cleaning gas from at least one of the first gas nozzle, the second gas nozzle and the third gas nozzle without creating negative pressure inside the second gas nozzle relative to the processing container, to remove deposits in the processing container. The substrate processing method according to claim 8.

10. (c) With the substrate housed in the processing container, the process involves supplying a first reaction gas from the first gas nozzle and supplying a second reaction gas that reacts with the first reaction gas from the second gas nozzle to form a film on the substrate. The substrate processing method according to claim 8 or 9.

11. After performing step (c) a set number of times, steps (a) and (b) are performed in this order. The substrate processing method according to claim 10.

12. After performing step (c) for the first time, perform step (a), and after performing step (a) for the second time, perform step (b). The substrate processing method according to claim 10.

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