Magnetic flux relaxation in superconducting circuits

Abstract

One example includes a superconducting circuit. The superconducting circuit components are fabricated on the first surface of a circuit layer. The circuit layer includes a dielectric material. The circuit includes a metal layer formed on the second surface opposite to the first surface of the circuit layer, and substrate through vias (TSVs) that are conductively coupled to the metal layer and extend through the circuit layer to the first surface. The circuit further includes a flux gasket that is conductively coupled to the TSVs on the first surface proximate to the superconducting circuit components and extends from the TSVs. The flux gasket may be configured to divert a magnetic field away from the superconducting circuit components.

Description

Technical Field

[0001] This specification generally relates to electronic circuits, and more particularly to magnetic flux relaxation in superconducting circuits.

Background Art

[0002] Superconducting circuits operate based on the behavior of superconducting metals in a cryogenic environment. For example, at very low cryogenic temperatures (e.g., less than 1 K), a superconducting metal can exhibit superconductivity where electrons can propagate with almost zero resistance. A typical superconducting circuit can operate based on a bias current being provided to a bias input for the purpose of affecting the triggering of Josephson junctions and / or providing magnetic flux to a superconducting loop. When a superconducting circuit is cooled from a typical ambient temperature environment to a cryogenic temperature, thus below the superconducting critical temperature of the superconducting device, noise currents can occur and propagate into the superconducting circuit via the bias input. Such noise currents can generate magnetic flux on the superconducting loop, which remains without dissipation and can cause magnetic flux traps that may adversely affect the operation of the superconducting circuit after the superconducting circuit has been cooled to cryogenic temperatures.

Summary of the Invention

[0003] [[ID=十八]] One example includes a superconducting circuit. The circuit includes superconducting circuit components fabricated on a first surface of a circuit layer. The circuit layer includes a dielectric material. The circuit includes a metal layer formed on a second surface opposite the first surface of the circuit layer, and a through-substrate via (TSV) that is conductively coupled to the metal layer and extends through the circuit layer to the first surface. The circuit further includes a magnetic flux gasket that is conductively coupled to the TSV on the first surface proximate to the superconducting circuit components and extends from the TSV. The magnetic flux gasket may be configured to deflect a magnetic field away from the superconducting circuit components.

[0004] It should be noted that there are some incorrect tag usages in the original text (such as "十六" and "十七" which are not proper tags), but I have translated it as per the requirements while keeping those incorrect tags as they are.Another example described herein includes a method for fabricating a superconducting circuit. The method includes depositing a metallic material to form a metallic layer, and forming a TSV conductively coupled to the metallic layer and extending perpendicularly from the metallic layer. The method also includes depositing a dielectric material on the metallic layer so as to surround the TSV to form a circuit layer. The circuit layer includes a first surface and a second surface opposite the first surface and in contact with the metallic layer. The method also includes fabricating a superconducting circuit component on the first surface of the circuit layer. The method further includes forming a flux gasket conductively coupled to the TSV on the first surface adjacent to the superconducting circuit component and extending from the TSV. The flux gasket may be configured to deflect the magnetic field away from the superconducting circuit component.

[0005] Another example described herein includes a superconducting circuit system. The system includes a first superconducting circuit system. The first superconducting circuit system includes a first superconducting circuit component fabricated on a first surface of a first circuit layer. The first circuit layer includes a dielectric material. The first superconducting circuit system includes a first metal layer formed on a second surface opposite to the first surface of the first circuit layer, and a first TSV conductively coupled to the first metal layer and extending through the first circuit layer to the first surface. The first superconducting circuit system further includes a first flux gasket conductively coupled to the first TSV on the first surface adjacent to the first superconducting circuit component and extending from the first TSV. The first flux gasket may be configured to deflect the magnetic field away from the superconducting circuit component. The system also includes a second superconducting circuit system. The second superconducting circuit system includes a second superconducting circuit component fabricated on a first surface of a second circuit layer. The second circuit layer includes a dielectric material. The second superconducting circuit system includes a second metal layer formed on the second surface of the second circuit layer opposite to the first surface, and a second TSV conductively coupled to the second metal layer and extending through the second circuit layer to the first surface of the second circuit layer. The second superconducting circuit system further includes a second flux gasket conductively coupled to the second TSV on the first surface of the second circuit layer adjacent to the second superconducting circuit component and extending from the second TSV. The second flux gasket may be configured to deflect the magnetic field away from the superconducting circuit. [Brief explanation of the drawing]

[0006] [Figure 1] Figure 1 is an example of a block diagram of a superconducting circuit system. [Figure 2] Figure 2 shows an example of a superconducting circuit layer. [Figure 3] Figure 3 shows an example of a superconducting circuit system. [Figure 4] Figure 4 shows an example of a method for manufacturing a superconducting circuit system. [Modes for carrying out the invention]

[0007] This specification generally relates to electronic circuits, and more particularly to flux relaxation in superconducting circuits. A superconducting circuit as described herein may include superconducting circuitry fabricated on a first surface of a circuit layer, the circuit layer also including a second surface opposite the first surface. As described herein, the term “circuit layer” may refer to a wafer or die layer on which the superconducting circuit is fabricated, consisting of layers of metal (e.g., including a superconducting metal) and dielectric material. Thus, the first and second surfaces may correspond to opposing surfaces of the wafer or die on which the superconducting circuit is manufactured. The superconducting circuit may also include a metal layer formed on the second surface and at least one through-substrate via (TSV) conductively coupled to the metal layer and extending through the circuit layer from the second surface to the first surface of the circuit layer (e.g., surrounded by dielectric material). The superconducting circuit may further include a flux gasket that extends from each of the TSVs (or more) on the first surface of the circuit layer and is positioned in close proximity to the superconducting circuit components. The flux gasket may be configured to deflect the magnetic field away from the superconducting circuit components.

[0008] For example, metal layers, TSVs (multiple magnetic flux swivels), and their respective flux gaskets can be formed integrally with each other. For instance, the metal layers, TSVs, and their respective flux gaskets can be formed from magnetic materials such as iron (Fe), iron-silicon (FeSi), cobalt (Co), nickel (Ni), or permalloy. As a result, the magnetic flux provided through the superconducting circuit can align the magnetic dipoles within the metal layers, TSVs, and their respective flux gaskets, isolating the magnetic field from the flow through the metal layers, TSVs, and their respective flux gaskets. For example, a superconducting circuit component can be positioned between multiple flux gaskets associated with each array of TSVs (e.g., surrounded by multiple flux gaskets). Thus, flux gaskets positioned near a superconducting circuit component can divert the magnetic field away from the superconducting circuit component.

[0009] For example, the superconducting circuit may be a first superconducting circuit, and the second superconducting circuit may be manufactured in substantially the same manner as the first superconducting circuit. For example, the second superconducting circuit may include a second superconducting circuit component fabricated on a first surface of a second circuit layer, the second circuit layer also including a second surface opposite to the first surface. The second superconducting circuit may also include a second metal layer formed on the second surface of the second circuit layer, and at least one second TSV (e.g., surrounded by dielectric material) conductively coupled to the second metal layer and extending through the second circuit layer from the second surface to the first surface of the second circuit layer. The second superconducting circuit may further include a second flux gasket that extends from each of the second TSV(s) on the first surface of the second circuit layer and can be positioned in close proximity to the second superconducting circuit component.

[0010] The first and second circuit layers can be stacked inverted relative to each other, with the first faces of the first and second circuit layers facing each other. Thus, the first and second superconducting circuit components can be conductively coupled via bump bonds, and the first TSV and second TSV, as well as the first and second flux gaskets, can be aligned axially. As a result, the magnetic flux provided through the superconducting circuit can be isolated by the metal layers of the superconducting circuit, the multiple TSVs, and their respective flux gaskets, and can be deflected away from the superconducting circuit components by passing between the flux gaskets of the multiple superconducting circuits. Thus, the magnetic flux passing through the susceptible superconducting circuit components can be substantially mitigated.

[0011] Figure 1 is an example block diagram of a superconducting circuit 100. The superconducting circuit 100 can be implemented in any of the various superconducting applications, such as superconducting computer systems. The superconducting circuit 100 includes superconducting circuit components 102 fabricated on a first surface of a circuit layer, the circuit layer also including a second surface opposite the first surface. As an example, the superconducting layer may include a dielectric material. The superconducting circuit 100 also includes a metal layer 104 formed on the second surface of the circuit layer. The metal layer 104 can be arranged as a thin-film metal material and therefore can have a thickness less than the thickness of the dielectric material of the circuit layer. The superconducting circuit 100 also includes at least one through-substrate via (TSV) 106 conductively coupled to the metal layer 104 and extending through the circuit layer from the second surface to the first surface of the circuit layer (e.g., surrounded by a dielectric material). The superconducting circuit 100 further includes a flux gasket 108 which extends from each of the TSVs 106(or more) on the first surface of the circuit layer and can be positioned in close proximity to the superconducting circuit components 102. The flux gasket 108 can be configured to deflect the magnetic field away from the superconducting circuit components 102, as will be described in more detail herein.

[0012] For example, the metal layer 104, TSV 106(or more), and each flux gasket 108(or more) can be formed integrally with each other. For instance, the metal layer 104, TSV 106, and each flux gasket 108 can be formed from magnetic materials such as iron (Fe), iron-silicon (FeSi), cobalt (Co), nickel (Ni), or permalloy. As a result, the magnetic flux provided through the superconducting circuit 100 can align the magnetic dipoles within the metal layer 104, TSV 106(or more), and each flux gasket 108(or more), thereby isolating the magnetic field into the flow through the metal layer 104, TSV 106, and each flux gasket 108. For example, a superconducting circuit component 102 can be positioned between multiple flux gaskets 108 associated with each array of TSV 106 (e.g., surrounded by multiple flux gaskets 108). Therefore, the flux gasket 108 positioned near the superconducting circuit component 102 can divert the magnetic field away from the superconducting circuit component 102. Thus, the arrangement of the metal layer 104, TSV 106(or more), and each flux gasket 108(or more) can provide a more deterministic, and therefore less probabilistic, process for diverting the magnetic flux away from the superconducting circuit component 102.

[0013] For example, the superconducting circuit 100 can be a first superconducting circuit, and the second superconducting circuit can be manufactured in substantially the same manner as the first superconducting circuit. Thus, each superconducting circuit can include superconducting circuit components 102, metal layers 104, TSVs 106(or more), and flux gaskets 108(or more) in a similar arrangement. For example, the first circuit layer and the second circuit layer can be stacked inverted relative to each other, with the first faces of the first and second circuit layers facing each other. Thus, the superconducting circuit components 102 of the first and second superconducting circuits may be electrically coupled via bump bonds. For example, the TSVs 106(or more) of the first and second superconducting circuits, and therefore the respective flux gaskets 108, can be aligned axially. As a result, the magnetic flux provided through the superconducting circuit can be isolated by the metal layer 104 of the superconducting circuit, the multiple TSVs 106, and their respective flux gaskets 108. The magnetic field that passes through the metal layer 104 and along the TSVs 106(or more) and enters the flux gasket 108(or more) of the first superconducting circuit then passes through the small air gap between the multiple superconducting circuits, enters the flux gasket 108(or more), and along the TSVs 106(or more) to the metal layer 104 of the other superconducting circuits. Thus, the magnetic flux passing through the susceptible superconducting circuit components 102 can be substantially mitigated.

[0014] Figure 2 is an illustrative diagram of a superconducting circuit 200. The superconducting circuit is shown in the first view 202 and the second view 204 of diagram 200. The first view 202 corresponds to a cross-sectional view of the superconducting circuit, which can extend further in each direction in the XZ plane. The second view 204 corresponds to a plan view along the Y axis. The superconducting circuit can correspond to the superconducting circuit 100 in the example of Figure 1. Therefore, the example of Figure 1 will be referenced in the following description of the example of Figure 2.

[0015] In the example in Figure 2, the superconducting circuit includes a circuit layer 206. The circuit layer 206 can correspond to a dielectric material between a first surface 208 and a second surface 210. The superconducting circuit includes superconducting circuit components 212 distributed at multiple positions along the first surface 208 of the circuit layer 206. Furthermore, the superconducting circuit includes multiple flux gaskets 214 on the first surface 208. In the example in Figure 2, in the second view 204, the superconducting circuit components 212 and flux gaskets 214 are arranged in alternating arrays, with each set of superconducting circuit components 212 positioned between the flux gaskets 214. In particular, in the example in Figure 2, the superconducting circuit components 212 are surrounded by the flux gaskets 214 in a direction orthogonal to the XZ plane. In the example in Figure 2, the superconducting circuit components 212 and flux gaskets 214 are shown as having a square shape in the XZ plane. However, other shapes and arrangements (e.g., circular, rectangular, or asymmetrical shapes) are possible as alternative forms.

[0016] The superconducting circuit also includes a plurality of TSVs 216 extending between the first surface 208 and the second surface 210 of the circuit layer 206. Each of the plurality of TSVs 216 is conductively coupled to a metal layer 218 deposited on the second surface 210 of the circuit layer 206. Each of the plurality of TSVs 216 is conductively coupled to one of each of the plurality of flux gaskets 214, and the plurality of TSVs 216 provide a conductive coupling between the metal layer 218 and the flux gaskets 214. For example, the metal layer 218, TSVs 216, and flux gaskets 214 can be formed from magnetic materials such as iron (Fe), iron-silicon (FeSi), cobalt (Co), nickel (Ni), or permalloy, and can be formed integrally with each other. In the example shown in Figure 2, the multiple TSV216s are shown having a square cross-sectional shape in the XZ plane, but they can be arranged in any of various other cross-sectional shapes and may be solid, hollow, or filled with dielectric material.

[0017] As an example, a superconducting circuit can be formed by first depositing a metallic material to form a metallic layer 218. Then, multiple TSVs 216 can be formed on the metallic layer 218, and subsequently, a dielectric material can be deposited to form a circuit layer 206. Thus, the dielectric material of the circuit layer 206 can surround each of the multiple TSVs 216, and the multiple TSVs 216 extend from the first surface 208 to the second surface 210 of the circuit layer 206. Next, a flux gasket 214 can be formed on the first surface 208 of the circuit layer 206 in conductive contact with each TSV 216. Finally, a superconducting circuit component 212 can be fabricated on the first surface 208 of the circuit layer 206 in the space between the multiple flux gaskets 214.

[0018] As described above in the example in Figure 1, a superconducting circuit system can include two superconducting circuits. Therefore, the superconducting circuit in diagram 200 can be one of the two superconducting circuits that form the superconducting circuit system.

[0019] Figure 3 shows an example of a superconducting circuit system 300. The superconducting circuit system 300 includes a first superconducting circuit 302 and a second superconducting circuit 304. Each of the superconducting circuits 302 and 304 can correspond to the superconducting circuit 100 or superconducting circuit in the respective examples of Figures 1 and 2. Therefore, the examples of Figures 1 and 2 will be referenced in the following description of the example in Figure 3.

[0020] In the example in Figure 3, the first superconducting circuit 302 and the second superconducting circuit 304 are shown as being manufactured in much the same manner as the superconducting circuit in the example in Figure 2. Thus, the first superconducting circuit 302 includes a circuit layer 306 having a first surface 308 and a second surface 310, and superconducting circuit components 312 distributed at multiple positions along the first surface 308 of the circuit layer 306. In addition, the first superconducting circuit 302 includes a plurality of flux gaskets 314 on the first surface 308, a plurality of TSVs 316 each extending between the first surface 308 and the second surface 310 of the circuit layer 306, and a metal layer 318 deposited on the second surface 310 of the circuit layer 306. Thus, each of the plurality of TSVs 316 is conductively coupled to the metal layer 318 and one of the plurality of flux gaskets 314, respectively.

[0021] Similarly, the second superconducting circuit 304 includes a circuit layer 320 having a first surface 322 and a second surface 324, and superconducting circuit components 326 distributed at multiple positions along the first surface 322 of the circuit layer 320. In addition, the second superconducting circuit 304 includes a plurality of flux gaskets 328 on the first surface 322, a plurality of TSVs 330 each extending between the first surface 322 and the second surface 324 of the circuit layer 320, and a metal layer 332 deposited on the second surface 324 of the circuit layer 320. Thus, each of the plurality of TSVs 330 is electrically coupled to the metal layer 332 and each of the plurality of flux gaskets 328.

[0022] In the example in Figure 3, superconducting circuits 302 and 304 are arranged to be stacked inverted relative to each other, with the first faces 308 and 322 of circuit layers 306 and 320 facing each other, respectively. The first superconducting circuit component 312 and the second superconducting circuit component 326 are shown as being electrically coupled via a bump bond 334. The arrangement of superconducting circuits 302 and 304 provides an air gap 336 between the first faces 308 and 322 of circuit layers 306 and 320, respectively, in the region around the bump bond 334. The gap described herein is an air gap 336, but as an example, it may be filled with a dielectric material instead. In the example in Figure 3, based on the inverted and stacked arrangement of superconducting circuits 302 and 304, the TSV 316 is axially aligned with respect to the TSV 330. Thus, the flux gasket 314 is similarly axially aligned with the flux gasket 328.

[0023] Based on the inversion and stacked arrangement of superconducting circuits 302 and 304, metal layers 318 and 332, TSVs 316 and 330, and flux gaskets 314 and 328 cooperate to divert magnetic fields away from superconducting circuit components 312 and 326. For example, in response to the magnetic flux provided to the first superconducting circuit 302, magnetic flux is provided to the metal layer 318. The magnetic dipoles of the metal layer 318, TSV 316, and flux gasket 314 can be aligned, and the magnetic flux is provided as a magnetic field along the TSV 316 through the metal layer 318. Thus, the magnetic field can be provided from the TSV 316 into the flux gasket 314. However, instead of spreading to pass through the superconducting circuit component 312, the magnetic field can be passed across the air gap 336 to the flux gasket 328, whose dipoles are similarly aligned. Thus, the magnetic field can pass from the flux gasket 328 along the TSV 330 to the metal layer 332 to complete the magnetic field circuit. Thus, the magnetic field is confined within the TSVs 316 and 330 and the flux gaskets 314 and 328 between the metal layer 318 and the metal layer 332 and passes through the superconducting circuit system 300. As a result, the magnetic flux passing through the superconducting circuit system 300 can be relaxed.

[0024] Considering the above structural and functional features, methods according to various aspects of the present invention will be better understood with reference to FIG. 4. For the purpose of simplicity of explanation, the method of FIG. 4 is shown and described as being executed continuously, but some aspects can occur in a different order than shown and described herein and / or simultaneously with other aspects according to the present invention, and thus it should be understood and recognized that the present invention is not limited by the order shown. Further, not all of the features shown are required to implement a method according to an aspect of the present invention.

[0025] FIG. 4 is an example of a method 400 for manufacturing a superconducting circuit (e.g., superconducting circuit 100). In 402, a metal material is deposited to form a metal layer (e.g., metal layer 104). In 404, TSVs (e.g., TSVs 106 (plural)) are formed to be conductively coupled to the metal layer and extend perpendicularly from the metal layer. In 406, a dielectric material is deposited to surround the TSVs on the metal layer to form a circuit layer (e.g., circuit layer 206). The circuit layer can include a first surface (e.g., first surface 208) and a second surface (e.g., second surface 210) that is on the opposite side of the first surface and in contact with the metal layer. In 408, superconducting circuit components (e.g., superconducting circuit component 102) are fabricated on the first surface of the circuit layer. In 410, a magnetic flux gasket (e.g., magnetic flux gaskets 108 (plural)) is conductively coupled to the TSVs on the first surface proximate to the superconducting circuit components and extends from the TSVs on the first surface proximate to the superconducting circuit components. The magnetic flux gasket may be configured to deflect a magnetic field away from the superconducting circuit components.

[0026] What has been described above are examples. Of course, it is impossible to describe all possible combinations of components or methods, but those skilled in the art will recognize that many more combinations and substitutions are possible. Accordingly, the present disclosure is intended to encompass all such changes, modifications, and variations that are within the scope of this application, including the appended claims. As used herein, the term "comprising" means including, but not limited to. The term "based on" means at least partially based on. Further, when a disclosure or claim recites "a", "a first", or "another" element, or an equivalent thereof, it should be construed to include one or more such elements, and does not exclude or require two or more such elements. The technical concepts included in this disclosure are described below as an addendum. (Note 1) A superconducting circuit, A superconducting circuit component fabricated on the first surface of a circuit layer, wherein the circuit layer includes a dielectric material, A metal layer formed on the second surface of the circuit layer opposite to the first surface, A through-substrate via (TSV) electrically bonded to the metal layer and extending through the circuit layer to the first surface, A magnetic flux gasket is electrically coupled to the TSV on the first surface adjacent to the superconducting circuit component and extends from the TSV. A circuit comprising a magnetic flux gasket configured to divert the magnetic field away from the superconducting circuit components. (Note 2) The circuit as described in Appendix 1, wherein the metal layer, at least a portion of the TSV, and the magnetic flux gasket are integrally formed with respect to each other. (Note 3) The circuit as described in Appendix 2, wherein the metal layer, at least a portion of the TSV, and the magnetic flux gasket are formed from a magnetic material. (Note 4) The circuit as described in Appendix 1, wherein the TSV is one of a plurality of TSVs arranged in an array on the circuit layer, each of the plurality of TSVs comprises its own flux gasket, and the superconducting circuit component is positioned between the respective flux gaskets associated with at least two of the plurality of TSVs. (Note 5) The superconducting circuit component is a first superconducting circuit component fabricated on a first circuit layer, the metal layer is a first metal layer, the TSV is a first TSV, the magnetic flux gasket is a first magnetic flux gasket, and the circuit is A second superconducting circuit component fabricated on the first surface of a second circuit layer, wherein the second circuit layer includes the dielectric material, A second metal layer formed on the second surface of the second circuit layer opposite to the first surface, A second TSV is electrically bonded to the second metal layer and extends through the second circuit layer to the first surface, A second magnetic flux gasket is electrically coupled to the second TSV on the first surface adjacent to the second superconducting circuit component and extends from the second TSV. The circuit described in Appendix 1 further includes the following: (Note 6) The circuit described in Appendix 5, wherein the first superconducting layer and the second superconducting layer are arranged to be stacked inverted relative to each other, and the first surface of the first circuit layer faces the first surface of the second circuit layer. (Note 7) The circuit according to Appendix 6, wherein the first TSV and the second TSV are aligned in the axial direction, the first flux gasket is aligned in the axial direction with the second flux gasket, and they are separated by a gap between the first surface of the first circuit layer and the first surface of the second circuit layer. (Note 8) The circuit as described in Appendix 6, wherein the first superconducting circuit component and the second superconducting circuit component are electrically coupled via bump bonds. (Note 9) The first TSV is one of a plurality of first TSVs arranged in an array on the first circuit layer, each of the plurality of first TSVs comprises its own first flux gasket, and the first superconducting circuit component is positioned between the respective first flux gaskets relating to at least two of the plurality of first TSVs, and the second TSV is one of a plurality of second TSVs arranged in an array on the second circuit layer, each of the plurality of second TSVs comprises its own second flux gasket, The circuit according to Appendix 6, wherein the second superconducting circuit component is positioned between the respective second flux gaskets associated with at least two of the plurality of second TSVs, each of the plurality of first TSVs is axially aligned with each of the second TSVs, and the first flux gasket of each of the plurality of first TSVs is axially aligned with the second flux gasket of each of the plurality of second TSVs, separated by a gap between the first surface of the first circuit layer and the first surface of the second circuit layer. (Note 10) An integrated circuit equipped with the superconducting circuit described in Appendix 1. (Note 11) A method for manufacturing a superconducting circuit, Depositing metallic material to form a metallic layer, To form through-substrate vias (TSVs) that are electrically bonded to the metal layer and extend perpendicularly from the metal layer, A circuit layer is formed by depositing a dielectric material on the metal layer so as to surround the TSV, wherein the circuit layer includes a first surface and a second surface located opposite the first surface and in contact with the metal layer. To fabricate a superconducting circuit component on the first surface of the circuit layer, To form a magnetic flux gasket that is electrically coupled to the TSV on the first surface adjacent to the superconducting circuit component and extends from the TSV. A method comprising a magnetic flux gasket configured to divert the magnetic field away from the superconducting circuit components. (Note 12) The method according to Appendix 11, wherein depositing the metal material includes depositing a magnetic material to form the metal layer, forming the TSV includes forming the TSV from a soft magnetic material, and forming the magnetic flux gasket includes forming the magnetic flux gasket from the soft magnetic material. (Note 13) The method according to Appendix 11, wherein forming the TSVs comprises forming a plurality of TSVs arranged in an array, each of which TSVs is electrically bonded to the metal layer and extends perpendicularly from the metal layer, and depositing the dielectric material comprises depositing the dielectric material on the metal layer so as to surround each of the plurality of TSVs to form the circuit layer. (Note 14) The superconducting circuit component is a first superconducting circuit component fabricated on a first circuit layer, the metal layer is a first metal layer, the TSV is a first TSV, the magnetic flux gasket is a first magnetic flux gasket, and the method is Depositing the aforementioned metal material to form a second metal layer, To form a second TSV that is electrically bonded to the second metal layer and extends perpendicularly from the second metal layer, A second circuit layer is formed by depositing the dielectric material on the second metal layer so as to surround the second TSV, wherein the second circuit layer includes a first surface and a second surface that is opposite the first surface and in contact with the second metal layer. To fabricate a second superconducting circuit component on the first surface of the second circuit layer, To form a second magnetic flux gasket that is electrically coupled to the second TSV on the first surface adjacent to the second superconducting circuit component and extends from the second TSV, The first superconducting circuit component is electrically coupled to the second superconducting circuit component via a bump bond. The method described in Appendix 11, further including the method described in Appendix 11. (Note 15) The method according to Appendix 14, wherein the first TSV and the second TSV are aligned in the axial direction, the first flux gasket is aligned in the axial direction with the second flux gasket, and is separated by a gap between the first surface of the first circuit layer and the first surface of the second circuit layer. (Note 16) A first superconducting circuit system, A first superconducting circuit component fabricated on the first surface of a first circuit layer, wherein the first circuit layer includes a dielectric material, A first metal layer formed on the second surface of the first circuit layer opposite to the first surface, A first through-substrate via (TSV) is electrically bonded to the first metal layer and extends through the first circuit layer to the first surface, A first magnetic flux gasket that is conductively coupled to the first TSV on the first surface adjacent to the first superconducting circuit component and extends from the first TSV, and is configured to deflect the magnetic field away from the superconducting circuit component, and A first superconducting circuit system, including, A second superconducting circuit system, A second superconducting circuit component fabricated on the first surface of a second circuit layer, wherein the second circuit layer includes the dielectric material, A second metal layer formed on the second surface of the second circuit layer opposite to the first surface, A second TSV is electrically bonded to the second metal layer and extends through the second circuit layer to the first surface of the second circuit layer, A second magnetic flux gasket that is conductively coupled to the second TSV on the first surface of the second circuit layer adjacent to the second superconducting circuit component and extends from the second TSV, and is configured to deflect the magnetic field away from the superconducting circuit component, and A second superconducting circuit system, including An integrated circuit equipped with the following features. (Note 17) The circuit described in Appendix 16, wherein the first superconducting layer and the second superconducting layer are arranged to be stacked inverted relative to each other, and the first surface of the first circuit layer faces the first surface of the second circuit layer. (Note 18) The circuit as described in Appendix 17, wherein the first TSV and the second TSV are aligned in the axial direction, the first flux gasket is aligned in the axial direction with the second flux gasket, and they are separated by a gap between the first surface of the first circuit layer and the first surface of the second circuit layer. (Note 19) The circuit as described in Appendix 17, wherein the first superconducting circuit component and the second superconducting circuit component are electrically coupled via a bump bond. (Note 20) The first TSV is one of a plurality of first TSVs arranged in an array on the first circuit layer, each of the plurality of first TSVs comprises its own first flux gasket, and the first superconducting circuit component is positioned between the respective first flux gaskets relating to at least two of the plurality of first TSVs, and the second TSV is one of a plurality of second TSVs arranged in an array on the second circuit layer, each of the plurality of second TSVs comprises its own second flux gasket, The circuit as described in Appendix 17, wherein the second superconducting circuit component is positioned between the respective second flux gaskets associated with at least two of the plurality of second TSVs, each of the plurality of first TSVs is axially aligned with each of the second TSVs, and the first flux gasket of each of the plurality of first TSVs is axially aligned with the second flux gasket of each of the plurality of second TSVs, separated by a gap between the first surface of the first circuit layer and the first surface of the second circuit layer.

Claims

1. A superconducting circuit, A superconducting circuit component fabricated on the first surface of a circuit layer, wherein the circuit layer includes a dielectric material, A metal layer formed on the second surface of the circuit layer opposite to the first surface, A through-substrate via (TSV) electrically bonded to the metal layer and extending through the circuit layer to the first surface, A magnetic flux gasket is electrically coupled to the TSV on the first surface adjacent to the superconducting circuit component and extends from the TSV. A circuit comprising a magnetic flux gasket configured to divert the magnetic field away from the superconducting circuit components.

2. The circuit according to claim 1, wherein the metal layer, at least a portion of the TSV, and the magnetic flux gasket are integrally formed with respect to each other.

3. The circuit according to claim 2, wherein the metal layer, at least a portion of the TSV, and the magnetic flux gasket are formed from a magnetic material.

4. The circuit according to claim 1, wherein the TSV is one of a plurality of TSVs arranged in an array on the circuit layer, each of the plurality of TSVs comprises its own flux gasket, and the superconducting circuit component is positioned between the respective flux gaskets associated with at least two of the plurality of TSVs.

5. The superconducting circuit component is a first superconducting circuit component fabricated on a first circuit layer, the metal layer is a first metal layer, the TSV is a first TSV, the magnetic flux gasket is a first magnetic flux gasket, and the circuit is A second superconducting circuit component fabricated on the first surface of a second circuit layer, wherein the second circuit layer includes the dielectric material, A second metal layer formed on the second surface of the second circuit layer opposite to the first surface, A second TSV is electrically bonded to the second metal layer and extends through the second circuit layer to the first surface, A second magnetic flux gasket is electrically coupled to the second TSV on the first surface adjacent to the second superconducting circuit component and extends from the second TSV. The circuit according to claim 1, further comprising:

6. The circuit according to claim 5, wherein the first superconducting layer and the second superconducting layer are arranged to be stacked inverted relative to each other, and the first surface of the first circuit layer faces the first surface of the second circuit layer.

7. The circuit according to claim 6, wherein the first TSV and the second TSV are aligned in the axial direction, the first flux gasket is aligned in the axial direction with the second flux gasket, and is separated by a gap between the first surface of the first circuit layer and the first surface of the second circuit layer.

8. The circuit according to claim 6, wherein the first superconducting circuit component and the second superconducting circuit component are electrically coupled via a bump bond.

9. The first TSV is one of a plurality of first TSVs arranged in an array on the first circuit layer, each of the plurality of first TSVs comprises its own first flux gasket, and the first superconducting circuit component is positioned between the respective first flux gaskets relating to at least two of the plurality of first TSVs, and the second TSV is one of a plurality of second TSVs arranged in an array on the second circuit layer, each of the plurality of second TSVs comprises its own second flux gasket, The circuit according to claim 6, wherein the second superconducting circuit component is positioned between the respective second flux gaskets associated with at least two of the plurality of second TSVs, each of the plurality of first TSVs is axially aligned with each of the second TSVs, and the first flux gasket of each of the plurality of first TSVs is axially aligned with the second flux gasket of each of the plurality of second TSVs, separated by a gap between the first surface of the first circuit layer and the first surface of the second circuit layer.

10. An integrated circuit comprising the superconducting circuit described in claim 1.

11. A method for manufacturing a superconducting circuit, Depositing metallic material to form a metallic layer, To form through-substrate vias (TSVs) that are electrically bonded to the metal layer and extend perpendicularly from the metal layer, A circuit layer is formed by depositing a dielectric material on the metal layer so as to surround the TSV, wherein the circuit layer includes a first surface and a second surface located opposite the first surface and in contact with the metal layer. To fabricate a superconducting circuit component on the first surface of the circuit layer, To form a magnetic flux gasket that is electrically coupled to the TSV on the first surface adjacent to the superconducting circuit component and extends from the TSV. A method comprising a magnetic flux gasket configured to divert the magnetic field away from the superconducting circuit components.

12. The method according to claim 11, wherein depositing the metal material includes depositing a magnetic material to form the metal layer, forming the TSV includes forming the TSV from a soft magnetic material, and forming the magnetic flux gasket includes forming the magnetic flux gasket from the soft magnetic material.

13. The method according to claim 11, wherein forming the TSVs comprises forming a plurality of TSVs arranged in an array, each of the plurality of TSVs being electrically bonded to the metal layer and extending perpendicularly from the metal layer, and depositing the dielectric material comprises depositing the dielectric material on the metal layer so as to surround each of the plurality of TSVs to form the circuit layer.

14. The superconducting circuit component is a first superconducting circuit component fabricated on a first circuit layer, the metal layer is a first metal layer, the TSV is a first TSV, the magnetic flux gasket is a first magnetic flux gasket, and the method is Depositing the aforementioned metal material to form a second metal layer, To form a second TSV that is electrically bonded to the second metal layer and extends perpendicularly from the second metal layer, A second circuit layer is formed by depositing the dielectric material on the second metal layer so as to surround the second TSV, wherein the second circuit layer includes a first surface and a second surface that is opposite the first surface and in contact with the second metal layer. To fabricate a second superconducting circuit component on the first surface of the second circuit layer, To form a second magnetic flux gasket that is electrically coupled to the second TSV on the first surface adjacent to the second superconducting circuit component and extends from the second TSV, The first superconducting circuit component is electrically coupled to the second superconducting circuit component via a bump bond. The method according to claim 11, further comprising:

15. The method according to claim 14, wherein the first TSV and the second TSV are aligned in the axial direction, the first flux gasket is aligned in the axial direction with the second flux gasket and separated by a gap between the first surface of the first circuit layer and the first surface of the second circuit layer.

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