Semiconductor manufacturing equipment, inspection equipment, and method for manufacturing semiconductor equipment

Abstract

To provide a technique that can improve the accuracy of detecting flaws.SOLUTION: A semiconductor manufacturing device comprises: an imaging device that picks up an image of a die; a lens that is provided on the imaging device; an illuminating device that radiates illumination light; and a control unit that causes the illuminating device to form a regular reflection area on the die or the periphery of the die and form a dark field area larger than the regular reflection area on the die during surface inspection, and repeats moving the regular reflection area and imaging the die at a predetermined pitch to inspect a predetermined area neighboring the regular reflection area in the dark field area.SELECTED DRAWING: Figure 6

Description

Technical Field

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[0001] The present disclosure relates to a semiconductor manufacturing apparatus and is applicable, for example, to a die bonder that inspects the surface of a die.

Background Art

[0002] In a part of the manufacturing process of a semiconductor device, there is a process of assembling a package by mounting a semiconductor chip (hereinafter referred to as a die) on a wiring board, a lead frame, etc. (hereinafter referred to as a substrate). In a part of the process of assembling the package, there are a process of dividing a die from a semiconductor wafer (hereinafter simply referred to as a wafer) (dicing process) and a die bonding process of mounting the divided die on the substrate. The semiconductor manufacturing apparatus used in the die bonding process is a die bonder or the like. At this time, in the die bonding process or a process before it, for example, in the dicing process, cracks, scratches, etc. (hereinafter referred to as defects) may occur in the die.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] An object of the present disclosure is to provide a technique capable of improving the detection sensitivity of defects. Other problems and novel features will become apparent from the description of this specification and the accompanying drawings.

Means for Solving the Problems

[0005] The outline of typical ones among the present disclosures will be briefly described as follows. In other words, the semiconductor manufacturing apparatus comprises an imaging device for imaging a die, a lens provided on the imaging device, an illumination device for irradiating illumination light, and a control unit configured to use the illumination device to form a specular reflection region on or around the die, and to form a dark-field region larger than the specular reflection region on the die during surface inspection, and to repeatedly move the specular reflection region at a predetermined pitch and image the die, and to inspect a predetermined region of the dark-field region that is close to the specular reflection region. [Effects of the Invention]

[0006] According to this disclosure, the sensitivity of scratch detection can be improved. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 is a schematic top view showing an example of the configuration of a die bonder in an embodiment. [Figure 2] Figure 2 is a diagram illustrating the schematic configuration as seen from the direction of arrow A in Figure 1. [Figure 3] Figure 3 is a block diagram showing the schematic configuration of the control system of the die bonder shown in Figure 1. [Figure 4] Figure 4 shows an example of the configuration of a dark-field inspection system in a comparative example. [Figure 5] Figure 5 shows the captured image and brightness in the dark-field inspection system shown in Figure 4. [Figure 6] Figure 6 shows an example of the configuration of a dark-field inspection system in an embodiment. [Figure 7] Figure 7(a) shows an image of the die under inspection when the illumination device is moved to the position shown in Figure 6(a). Figure 7(b) shows an image taken when the illumination device is moved to the position shown in Figure 6(b). [Figure 8] Figure 8 shows the operation of the dark-field inspection system in the first modified example. [Figure 9] Figure 9(a) shows the operation of the dark-field inspection system in the second modified example. Figure 9(b) shows the operation of the dark-field inspection system in the third modified example. [Figure 10] Figure 10 shows the configuration and operation of the dark-field inspection system in the fourth modified example. [Figure 11] Figure 11(a) shows the captured image when the lighting device is moved to the position shown in Figure 10(a). Figure 11(b) shows the captured image when the lighting device is moved to the position shown in Figure 10(b). Figure 11(c) shows the captured image when the lighting device is moved to the position shown in Figure 10(c). Figure 11(d) shows the captured image when the lighting device is moved to the position shown in Figure 10(d). [Figure 12] Figure 12 shows the configuration and operation of the dark-field inspection system in the fifth modified example. [Figure 13] Figure 13 shows the configuration of the dark-field inspection system in the sixth modified example. [Modes for carrying out the invention]

[0008] Embodiments and modified examples will be described below with reference to the drawings. However, in the following description, the same reference numerals will be used for the same components, and repeated explanations may be omitted. In addition, the drawings may be schematically represented in terms of width, thickness, shape, etc., of each part, rather than in the actual embodiment, in order to make the explanation clearer, but these are merely examples and do not limit the interpretation of this disclosure.

[0009] The configuration of the die bonder in the embodiment will be explained with reference to Figures 1 and 2.

[0010] The die bonder 10 is broadly composed of a die supply unit 1, a pickup unit 2, an intermediate stage unit 3, a bonding unit 4, a transport unit 5, a substrate supply unit 6, a substrate output unit 7, and a control unit 8 that monitors and controls the operation of each unit. The Y-axis direction is the front-to-back direction of the die bonder 10, and the X-axis direction is the left-to-right direction. The die supply unit 1 is located on the front side of the die bonder 10, and the bonding unit 4 is located on the back side. Here, one or more product areas (hereinafter referred to as package areas P) that will ultimately form a single package are printed on the substrate S.

[0011] The die supply unit 1 includes a wafer holding stage 12 for holding the wafer 11, and a pushing-up unit 13 indicated by a dotted line for pushing up the die D from the wafer 11. The wafer holding stage 12 is moved in the XY directions by driving means (not shown) and moves the picked-up die D to the position of the pushing-up unit 13. The pushing-up unit 13 is moved in the vertical direction by driving means (not shown). The wafer 11 is adhered onto a dicing tape 16 and is divided into a plurality of dies D. The wafer 11 is held by a wafer ring (not shown). Further, a film-like adhesive material called a die attach film (DAF) is attached between the wafer 11 and the dicing tape 16.

[0012] The pickup unit 2 includes a pickup head 21 for picking up the die D, a Y drive unit 23 of the pickup head for moving the pickup head 21 in the Y direction, various drive units (not shown) for raising, lowering, rotating, and moving the collet 22 in the X direction, and a wafer recognition camera 24 for recognizing the posture of the die D on the wafer 11. The pickup head 21 has a collet 22 for sucking and holding the pushed-up die D at its tip, picks up the die D from the die supply unit 1, and places it on the intermediate stage 31. The pickup head 21 has various drive units (not shown) for raising, lowering, rotating, and moving the collet 22 in the X direction.

[0013] The intermediate stage unit 3 includes an intermediate stage 31 for temporarily placing the die D, and a stage recognition camera 32 for recognizing the die D on the intermediate stage 31.

[0014] The bonding unit 4 includes a bonding head 41, a Y driving unit 43, and a substrate recognition camera 44. The bonding head 41 is provided with a collet 42 that adsorbs and holds the die D at its tip, similar to the pickup head 21. The Y driving unit 43 moves the bonding head 41 in the Y-axis direction. The substrate recognition camera 44 images a position recognition mark (not shown) in the package area P of the substrate S and recognizes the bonding position. The bonding unit 4 picks up the die D from the intermediate stage 31 and bonds the die onto the package area P of the transported substrate S, or bonds the die in a form of laminating on top of a die that has already been bonded onto the package area P of the substrate S. With such a configuration, the bonding head 41 corrects the pickup position and posture based on the imaging data of the stage recognition camera 32 and picks up the die D from the intermediate stage 31. Then, the bonding head 41 bonds the die D onto the package area P of the substrate based on the imaging data of the substrate recognition camera 44, or in a form of laminating on top of a die that has already been bonded onto the package area P of the substrate S.

[0015] The transport unit 5 includes a substrate transport claw 51 that grabs and transports the substrate S, and a transport lane 52 along which the substrate S moves. The substrate S is moved by driving a nut (not shown) of the substrate transport claw 51 provided on the transport lane 52 with a ball screw (not shown) provided along the transport lane 52. With such a configuration, the substrate S moves from the substrate supply unit 6 along the transport lane 52 to the bonding position, and after bonding, moves to the substrate unloading unit 7 and delivers the substrate S to the substrate unloading unit 7.

[0016] The wafer recognition camera 24, the stage recognition camera 32, and the substrate recognition camera 44 are used together with an illumination device described later to perform a surface inspection of the die D. The illumination device used for the surface inspection may be the same as or different from the illumination device used for die D posture recognition and the like.

[0017] Next, the control unit 8 will be described using FIG. 3.

[0018] The control system 80 comprises a control unit (control device) 8, a drive unit 86, a signal unit 87, and an optical system 88. The control unit 8 is broadly composed of a control / arithmetic unit 81 mainly consisting of a CPU (Central Processing Unit), a storage device 82, an input / output device 83, a bus line 84, and a power supply unit 85. The storage device 82 has a main storage device 82a consisting of RAM (Random Access Memory) that stores processing programs and the like, and an auxiliary storage device 82b consisting of an HDD (Hard Disk Drive) or SSD (Solid State Drive) that stores control data and image data necessary for control.

[0019] The input / output device 83 includes a monitor 83a that displays the device status and information, a touch panel 83b for inputting operator instructions, a mouse 83c for operating the monitor, and an image acquisition device 83d for acquiring image data from the optical system 88. The input / output device 83 also includes a motor control device 83e that controls drive units 86 such as the XY table (not shown) of the die supply unit 1 and the ZY drive axis of the bond head table, and an I / O signal control device 83f that acquires or controls signals from a signal unit 87 including switches and potentiometers that control the brightness of various sensors and the lighting device 26 described later. The optical system 88 includes a wafer recognition camera 24, a stage recognition camera 32, and a substrate recognition camera 44. The control and calculation device 81 acquires necessary data via the bus line 84, performs calculations, and controls the pickup head 21 and sends information to the monitor 83a, etc.

[0020] The control unit 8 stores image data captured by the wafer recognition camera 24, stage recognition camera 32, and substrate recognition camera 44 via the image acquisition device 83d in the storage device 82. Based on the stored image data, programmed software uses the control / calculation device 81 to position the die D and the package area P of the substrate S, and to perform surface inspection of the die D and the substrate S. Based on the position of the die D and the package area P of the substrate S calculated by the control / calculation device 81, the software moves the drive unit 86 via the motor control device 83e. This process positions the die on the wafer, and the drive units of the pickup unit 2 and the bond unit 4 operate to bond the die D onto the package area P of the substrate S. The wafer recognition camera 24, stage recognition camera 32, and substrate recognition camera 44 used quantify light intensity and color. The wafer recognition camera 24, stage recognition camera 32, and substrate recognition camera 44 are also called imaging devices.

[0021] Next, we will explain the die bonding process, which is one of the steps in the manufacturing process of semiconductor devices.

[0022] In the die bonding process of this embodiment, first, a wafer ring with the wafer assembled is prepared and loaded into the die bonder 10 (P1 step). The control unit 8 places the wafer ring on the wafer holder 12 and transports the wafer holder 12 to a reference position where the die D is picked up (P2 step). Then, the substrate S is prepared and loaded into the die bonder 10 (P3 step). The control unit 8 places the substrate S on the transport lane 52 using the substrate supply unit 6. The control unit 8 moves the substrate transport claws 51, which grasp and transport the substrate S, to the bonding position (P4 step).

[0023] Following step P2, the control unit 8 moves the wafer holder 12 on which the wafer 11 is placed by a predetermined pitch and holds it horizontally, thereby positioning the die D to be picked up first at the pickup position (step P5).

[0024] Following step P5, the control unit 8 uses the wafer recognition camera 24 to photograph the main surface (top surface) of the die D to be picked up, and calculates the amount of positional displacement of the die D from the aforementioned pickup position from the acquired image. Based on this amount of positional displacement, the control unit 8 moves the wafer holder 12 on which the wafer 11 is placed to accurately position the die D to be picked up at the pickup position (step P6). Then, the control unit 8 uses the wafer recognition camera 24 to photograph the main surface (top surface) of the die D to be picked up, and performs a surface inspection of the die D from the acquired image (step P7).

[0025] Following step P4, the control unit 8 uses the substrate recognition camera 44 to image the substrate S and positions the substrate S based on the captured image (step P8). Then, the control unit 8 uses the substrate recognition camera 44 to image the substrate S and performs a surface inspection of the package area P of the substrate S from the acquired image (step P9).

[0026] Following step P8, the control unit 8 picks up the die D from the dicing tape 16 using the pickup head 21, which includes the collet 22, and places it on the intermediate stage 31 (step P10). Thereafter, die D is peeled off from the dicing tape 16 one by one according to the same procedure. Once all die D except for defective ones has been picked up, the dicing tape 16 and wafer rings that held the die D in the shape of the wafer 11 are unloaded.

[0027] Following step P10, the control unit 8 detects the orientation misalignment of the die placed on the intermediate stage 31 by imaging it with the stage recognition camera 32. If there is an orientation misalignment, the control unit 8 corrects the orientation misalignment by driving the intermediate stage 31 with a drive device (not shown) provided on the intermediate stage 31 in a plane parallel to the mounting surface where the mounting position is located (step P11). Then, the control unit 8 images the die placed on the intermediate stage 31 with the stage recognition camera 32 and performs a surface inspection of the die D from the acquired image (step P12).

[0028] Following step P12, the control unit 8 picks up the die D from the intermediate stage 31 using the bond head 41 which includes the collet 42, and performs die bonding to the package area P of the substrate S or to a die that has already been bonded to the package area P of the substrate S (step P13).

[0029] Following step P13, the control unit 8, after bonding the die D, inspects whether the bonding position is accurate by imaging the die D and substrate S with the substrate recognition camera 44 (step P14). At this time, the center of the die and the center of the tab are determined and checked to see if the relative position is correct. Then, the control unit 8 images the die D and substrate S with the substrate recognition camera 44 and performs a surface inspection of the die D and substrate S from the acquired images (step P15).

[0030] Subsequently, following the same procedure, the die D bonds to the package area P of the substrate S one by one. Once bonding of one substrate is complete, the substrate transport claws 51 move the substrate S to the substrate output section 7 and transfer the substrate S to the substrate output section 7 (step P16). Then, the substrate S is ejected from the die bonder 10 (step P17).

[0031] As described above, die D is mounted on substrate S via die attach film and discharged from die bonder. Subsequently, in the wire bonding process, it is electrically connected to the electrodes of substrate S via Au wire. When manufacturing a laminated package, the substrate S with die D mounted on it is then fed into die bonder, and a second die D is laminated on top of the die D mounted on substrate S via die attach film. After being discharged from die bonder, it is electrically connected to the electrodes of substrate S via Au wire in the wire bonding process. The second and subsequent dies D are peeled off from dicing tape 16 in the manner described above, then transported to bonding positions and laminated on top of die D. After the above process is repeated a predetermined number of times, substrate S is transported to molding, and the laminated package is completed by sealing the multiple dies D and Au wires with molding resin (not shown).

[0032] Surface inspection for defects may be performed at at least one of the die supply unit 1, intermediate stage unit 3, and bond unit 4, which are locations for die position recognition, but it is more preferable to perform it at all locations. Performing it at the die supply unit 1 allows for early detection of defects. Performing it at the intermediate stage unit 3 allows for the detection of defects that could not be detected at the die supply unit 1 or defects that occurred after the pickup process (defects that did not become apparent before the die bonding process) before bonding. Furthermore, performing it at the bond unit 4 allows for the detection of defects that could not be detected at the die supply unit 1 and intermediate stage unit 3 (defects that did not become apparent before the die bonding process) or defects that occurred after the die bonding process, before bonding to stack the next die, or before substrate ejection.

[0033] To clarify the illumination for surface inspection in this embodiment, the problems with illumination for detecting scratches will be described.

[0034] When designing a function for inspecting defects using images captured by a camera, there are two types of lighting configurations: the dark-field method, which "darkens the background and brightens the object to be viewed," and the bright-field method, which "brightens the background and darkens the object to be viewed."

[0035] A dark-field inspection system using the dark-field method in a comparative example will be explained with reference to Figures 4 and 5. The upper part of Figure 4 is a top view, and the lower part is a front view.

[0036] As shown in Figure 4, a camera 101 with a lens 102 attached is positioned above the surface of the die D to be inspected. The field of view CV of the camera 101 includes the die D to be inspected and part or all of the adjacent peripheral die Dp. The illumination device 103 is oblique illumination such as an oblique light bar, and illuminates the area near the outside of the die D to be inspected at a predetermined angle with respect to the optical axis OA with illumination light IL. Here, the illumination light IL is directed toward the peripheral die Dp adjacent to the left side of the die D. The illumination surface of the illumination device 103 extends in the Y-axis direction. The direction of illumination light IL in the horizontal direction is the X-axis direction.

[0037] Surface inspection (dark-field inspection) in a dark-field inspection system is performed in areas other than the specular reflection region (SRA), which is determined by the installation position of the oblique light bar illumination. Here, the specular reflection region (SRA) is the specular reflection image of the illumination projected onto the surface of a die D or other object exhibiting specular reflection characteristics. As shown in Figure 7, the specular reflection region (SRA) is rectangular in shape, with a length in the Y-axis direction longer than the length in the X-axis direction. The specular reflection region (SRA) is formed on the peripheral die Dp adjacent to the left side of the die D being inspected. In dark-field inspection, the visualization of defects is achieved by the reflection of light from the sides (inside) of minute defects. When defects such as cracks occur continuously in a linear manner, the sides are also continuous, and the defects are visualized depending on the direction of illumination light (IL). Therefore, in the horizontal direction, the illumination light (IL) is irradiated from a direction different from the direction in which the defect extends, so that light hits the sides.

[0038] As shown in the upper image of Figure 5, the scratch K extending along the Y-axis is recognizable, but it gradually becomes darker as it moves towards the X-axis. As shown in the brightness (BR) graph at the bottom of Figure 5, the brightness ratio (contrast ratio) between the background BG and the scratch K increases as it approaches the specular reflection region SRA, so the sensitivity is highest in the region adjacent to the specular reflection region SRA. In other words, the inspection sensitivity decreases as you move away from the specular reflection region SRA.

[0039] The dark-field inspection system in this embodiment will be explained using Figures 6 and 7, with the optical system of the pickup unit as an example.

[0040] As shown in Figure 6, the wafer recognition camera 24, to which the lens 25 is attached, is positioned perpendicular to the surface of the wafer 11 (die D). That is, the optical axis OA is perpendicular to the surface of the die D. However, the wafer recognition camera 24 is positioned away from the center of the die D to be imaged. The illumination device 26 is a bar light, and its illumination surface is positioned opposite the surface of the wafer 11. The illumination device 26 illuminates in a direction along the optical axis OA, but since the illumination light emitted is diffuse light, there is a spread in the illumination direction (the illumination area on the surface of the wafer 11). The illumination surface of the illumination device 26 is rectangular in shape, with the length in the Y-axis direction being longer than the length in the X-axis direction. In other words, the illumination device 26 extends in the Y-axis direction. The width of the illumination surface of the illumination device 26 (length in the X-axis direction) is smaller than the width of the lens 25. The illumination device 26 is positioned outside the field of view CV of the wafer recognition camera 24, for example, at the same height as the bottom surface of the lens 25. The illumination device 26 is movable along the X-axis direction. The field of view of the wafer recognition camera 24 is wider than the die D.

[0041] As shown in Figure 6, the control unit 8 moves the illumination device 26 along the X-axis using a drive unit (not shown) to move the position of the specular reflection region SRA. When the illumination device 26 moves to the position shown in Figure 6(a), the specular reflection region SRA moves as shown in Figure 7(a), and the control unit 8 images the die D at that position. The control unit 8 processes the image of the captured image and inspects the inspection region IA adjacent to the right side of the specular reflection region SRA (the side in the direction of movement of the specular reflection region SRA). The inspection region IA, as a predetermined region, is of a predetermined size and is a high-sensitivity region for dark-field inspection. The inspection region IA is a part of the dark-field region formed on the die D, and is, for example, of the same size as the specular reflection region SRA. If the inspection region IA is located near the left end of the die D, the specular reflection region SRA is located near the left outer edge of the die D.

[0042] When the illumination device 26 moves to a position between (a) and (b) shown in Figure 6, the specular reflection region SRA moves to the center of the die D, and the control unit 8 images the die D at that position. The control unit 8 processes the image of the captured image and inspects the two inspection regions IA that are close to and sandwich the specular reflection region SRA.

[0043] When the illumination device 26 moves to the position shown in Figure 6(b), the specular reflection region SRA moves as shown in Figure 7(b), and the control unit 8 images the die D at that position. The control unit 8 processes the image of the captured image and inspects the inspection region IA adjacent to the left side of the specular reflection region SRA (opposite side of the direction of movement of the specular reflection region SRA). If the inspection region IA is to be near the right end of the die D, the specular reflection region SRA will be located near the right outer edge of the die D.

[0044] The control unit 8 can inspect the entire die D by repeatedly moving the lighting device 26, taking images of the die D with the wafer recognition camera 24, and performing inspection using image processing, thereby creating the most sensitive area across the entire die D.

[0045] The optical system of the pickup unit 2 (wafer recognition camera 24 and its illumination device 26) has been described, but the optical system of the intermediate stage unit 3 (stage recognition camera 32 and its illumination device) and the optical system of the bond unit 4 (substrate recognition camera 44 and its illumination device) have a similar configuration.

[0046] According to this embodiment, since inspection can be performed by moving through the specular reflection region, the sensitivity of scratch detection can be improved. Furthermore, because the scratch detection sensitivity is improved, the yield of products assembled by the die bonder can be improved.

[0047] <Variation> The following are some examples of typical modifications of the embodiments. In the following descriptions of modifications, the same reference numerals as in the embodiments described above may be used for parts having the same configuration and function as those described in the embodiments described above. Furthermore, the descriptions of such parts may be appropriately referenced from the embodiments described above, to the extent that they do not contradict the technical standards. In addition, some of the embodiments described above, and all or some of the modifications, may be applied in combination as appropriate, to the extent that they do not contradict the technical standards.

[0048] (First torture) The dark-field inspection system in the first modified example will be explained using Figure 8.

[0049] In this embodiment, an example was described in which the illumination device 26 is moved horizontally in order to move the position of the specular reflection region SRA, but the wafer recognition camera 24 may also be moved horizontally. When the wafer recognition camera 24 is moved, the position of the wafer 11 (die D) moves within the field of view CV of the wafer recognition camera 24, and the specular reflection position of the illumination light reaching the wafer recognition camera 24 on the wafer 11 (die D) also changes.

[0050] (Second variation) The dark-field inspection system in the second modified example will be explained using Figure 9(a).

[0051] In this embodiment, an example was described in which the illumination device 26 is moved horizontally in order to move the position of the specular reflection region SRA. However, as shown in Figure 9(a), the wafer 11 (die D), which is the subject, may also be moved horizontally. This changes the specular reflection position of the illumination light on the wafer 11 (die D) that reaches the wafer recognition camera 24.

[0052] (Third variation) The dark-field inspection system in the third modified example will be explained using Figure 9(b).

[0053] As shown in Figure 9(b), the illumination device 26 may be moved in a direction along the optical axis OA (perpendicular to the surface of the wafer 11 (die D)). This changes the specular reflection position of the illumination light on the wafer 11 (die D) that reaches the wafer recognition camera 24.

[0054] (Fourth variation) The dark-field inspection system in the fourth modified example will be explained using Figures 10 and 11.

[0055] In this embodiment, the wafer recognition camera 24 is positioned away from the center of the die D to be imaged. However, in the fourth modified example, as shown in Figure 10, the wafer recognition camera 24 is positioned near the center of the die D to be imaged, and the illumination device 26 is positioned so that it can pass under the wafer recognition camera 24 (lens 25).

[0056] The operation of the lighting device 26 when it moves from the left side of the wafer recognition camera 24 to the right side along the X-axis (left-right direction) and passes under the wafer recognition camera 24 will be described below.

[0057] First, the illumination device 26 is positioned so that the specular reflection region SRA is located near the left outer edge of die D. In this case, the area near the left end of die D, i.e., to the right of the specular reflection region SRA, is designated as the inspection region IA.

[0058] When the lighting device 26, which has moved from the left side, moves to position (a) shown in Figure 10, the specular reflection region SRA is formed near the left end of the die D, as shown in Figure 11(a). At this position, the area to the right of the specular reflection region SRA is designated as the inspection region IA.

[0059] Then, while the illumination device 26 moves to the position shown in Figure 10(b) (near the left end of the lens 25), the area to the right of the specular reflection region SRA is designated as the inspection region IA, as shown in Figure 11(b). Here, the position shown in Figure 10(b) is the limit position where the inspection region IA is not obstructed by the illumination device 26.

[0060] From position (b) to position (c) shown in Figure 10, the illumination device 26 is within the field of view of the wafer recognition camera 24, so imaging of the die D is not performed by moving only the illumination device 26.

[0061] Next, when the illumination device 26 moves to position (c) shown in Figure 10 (near the left end of the lens 25), the area to the left of the specular reflection region SRA becomes the inspection area, as shown in Figure 11(c). Here, position (c) shown in Figure 10 is the limit position where the inspection area IA is not obstructed by the illumination device 26.

[0062] Then, when the lighting device 26 moves to the position shown in Figure 10(d), the specular reflection region SRA is formed near the right end of the die D, as shown in Figure 11(d). In this case as well, the area to the left of the specular reflection region SRA is designated as the inspection region IA.

[0063] Finally, the illumination device 26 is positioned so that the specular reflection region SRA is located near the right outer edge of die D. In this case as well, the inspection area IA is defined as the area near the right edge of die D, i.e., to the left of the specular reflection region SRA. This makes it possible to inspect the entire surface of die D.

[0064] (Fifth variation) The dark-field inspection system in the fifth modified example will be explained using Figure 12.

[0065] In the fourth modified example, the illumination device 26 is located below the wafer recognition camera 24, and may therefore be within the field of view of the wafer recognition camera 24. In that case, one of the two regions adjacent to the specular reflection region SRA cannot be designated as an inspection region. For example, if the illumination device 26 moves to the position shown in Figure 10(b), the right side of the specular reflection region SRA shown in Figure 11(b) can be designated as an inspection region IA, but the left side of the specular reflection region SRA cannot be designated as an inspection region.

[0066] In the fifth modification, the wafer recognition camera 24, to which the lens 25 is attached, is positioned perpendicular to the surface of the die D to be imaged. That is, the optical axis OA is located near the center of the surface of the die D, and the wafer recognition camera 24 is positioned so that the optical axis OA is perpendicular to the surface of the die D. A half mirror 27 is then placed between the lens 25 and the die D, tilted at 45 degrees with respect to the optical axis OA of the wafer recognition camera 24. The illumination device 26 is positioned outside the field of view of the wafer recognition camera 24, and the illumination surface of the illumination device 26 is positioned opposite the half mirror 27. The illumination device 26 is movable along the direction of the optical axis OA.

[0067] The control unit 8 controls the illumination device 26 to move vertically so that the virtual illumination device 26' moves similarly to the illumination device 26 shown in Figure 10. Since the illumination device 26 is located outside the field of view of the wafer recognition camera 24, one of the two regions adjacent to the specular reflection region SRA can be designated as the inspection area. Furthermore, imaging is possible even when the virtual illumination device 26' is located directly below the lens 25 and near the outer edges of the left and right ends.

[0068] (Sixth variation) The dark-field inspection system in the sixth modified example will be explained using Figure 13.

[0069] A lens 25 is attached to the wafer recognition camera 24, and the system is configured to capture an image of the main surface of the die D through the lens 25. Between the lens 25 and the die D, which are on the line connecting the wafer recognition camera 24 and the die D, is an illumination device 260 which contains a surface-emitting illuminator (light source) 261 and a half-mirror (semi-transparent mirror) 262. The light emitted from the surface-emitting illuminator 261 is reflected by the half-mirror 262 along the same optical axis as the wafer recognition camera 24 and illuminates the die D. The scattered light that illuminates the die D along the same optical axis as the wafer recognition camera 24 is reflected by the die D, and the specularly reflected light passes through the half-mirror 262 and reaches the wafer recognition camera 24, forming an image of the die D. In other words, the illumination device 260 has the function of coaxial incident illumination (coaxial illumination).

[0070] The surface-emitting light 261 within the lighting device 260 is a surface-emitting type LED light source and includes an LED substrate 261b having multiple LEDs 261a arranged in a grid-like planar arrangement as point light sources. Each LED 261a is configured to be individually switched on and off.

[0071] The control unit 8 is configured to form a linear light source by sequentially lighting the LEDs 261a one column or one row at a time during surface inspection, and to move the linear light source. By narrowing the illumination area of ​​the half mirror 262 of the surface-emitting illumination 261, a specular reflection area (SRA) and a dark-field inspection area (IA) are provided. In addition, the control unit 8 is configured to light up all the LEDs 261a of the illumination device 26 during alignment.

[0072] The invention made by the Disclosers has been described in detail above based on embodiments and modifications, but it goes without saying that this disclosure is not limited to the above embodiments and modifications and can be modified in various ways.

[0073] For example, in this embodiment, die visual inspection and recognition are performed after die position recognition, but die position recognition may be performed after die visual inspection and recognition.

[0074] Furthermore, although a DAF is attached to the back surface of the wafer in this embodiment, the DAF is not required.

[0075] Furthermore, although the embodiment includes one pickup head and one bonding head, there may be two or more of each. Also, although the embodiment includes an intermediate stage, there may be no intermediate stage. In this case, the pickup head and bonding head may be used interchangeably.

[0076] In this embodiment, bonding is performed with the die surface facing upwards, but after picking up the die, the die may be flipped over and bonded with the die surface facing upwards. In this case, an intermediate stage is not required. This device is called a flip-chip bonder.

[0077] Furthermore, although the embodiment was described using a die bonder (semiconductor manufacturing equipment) that places dies on a substrate as an example, it can also be applied to inspection equipment that inspects the surface of a wafer (die) before it is fed into the die bonder, or to inspection equipment that inspects the surface of a die placed on a substrate after it has been discharged from the die bonder. [Explanation of symbols]

[0078] 8. Control Unit 10. Die bonder (semiconductor manufacturing equipment) 24. Wafer recognition camera (imaging device) 26. Lighting equipment D...Dai IA... Inspection area (designated area) SRA... specular reflection area

Claims

1. An imaging device for imaging the die, The lens provided in the imaging device, A lighting device that emits illumination light, A control unit configured to use the illumination device to form a specular reflection region on or around the die, and to form a dark-field region larger than the specular reflection region on the die during surface inspection, move the specular reflection region at a predetermined pitch, image the die at that position, and repeatedly move the specular reflection region and image the die to inspect for defects in a predetermined area of ​​the dark-field region adjacent to the specular reflection region, Equipped with, The imaging device is positioned at least offset outward from the end of the die, The illumination device is a bar light having an illumination surface whose first direction is longer than that of the second direction, and is configured to emit illumination light in a third direction along the optical axis of the imaging device, and is positioned so as not to be in the field of view of the imaging device. The control unit is configured to move the illumination device or the imaging device in the second direction relative to the die, and to change the distance between the illumination device and the imaging device, thereby moving the specular reflection region along the second direction from outside one end of the die to outside the other end of the die.

2. In the semiconductor manufacturing apparatus of Claim 1, The illumination device is positioned at the same height as the lower surface of the lens in the semiconductor manufacturing apparatus.

3. In the semiconductor manufacturing apparatus according to claim 1, The control unit, If the specular reflection region is located on one end side of the die, a predetermined region adjacent to the direction of movement of the specular reflection region is inspected. A semiconductor manufacturing apparatus configured to inspect a predetermined area adjacent to the opposite side of the direction of movement of the specular reflection region when the specular reflection region is located on the other end side of the die.

4. In the semiconductor manufacturing apparatus according to claim 1, The control unit is configured to inspect predetermined areas adjacent to both sides of the specular reflection region when the specular reflection region is located near the center of the die.

5. In the semiconductor manufacturing apparatus according to claim 1, The imaging device is fixedly mounted outside the end of the die, The control unit is configured to move the illumination device in the second direction between the outside of one end of the die and the vicinity of the other end of the die, thereby moving the specular reflection region from the outside of one end of the die to the outside of the other end of the die.

6. In the semiconductor manufacturing apparatus according to claim 1, The aforementioned lighting device is fixedly installed, The control unit is configured to move the imaging device in the second direction between the vicinity of one end of the die and the outside of the other end of the die, thereby moving the specular reflection region from the outside of one end of the die to the outside of the other end of the die.

7. In the semiconductor manufacturing apparatus of claim 1, The illumination device is a semiconductor manufacturing apparatus configured such that the length of the illumination surface in the second direction is smaller than the width of the lens.

8. An imaging device for imaging a die, The lens provided in the imaging device, A lighting device that emits illumination light, The illumination device forms a specular reflection region on or around the die, and during surface inspection, forms a dark-field region larger than the specular reflection region on the die, and the control unit is configured to repeatedly move the specular reflection region at a predetermined pitch and image the die, and to inspect a predetermined region of the dark-field region that is close to the specular reflection region, Equipped with, The illumination device is a bar illumination having an illumination surface that is longer in the first direction than in the second direction, and is configured to emit illumination light in a third direction along the optical axis of the imaging device. The control unit is configured to move the illumination device in a direction along the optical axis of the imaging device, thereby moving the specular reflection region.

9. In the semiconductor manufacturing apparatus of claim 8, The imaging device is a semiconductor manufacturing apparatus positioned offset outward from the end of the die.

10. An imaging device for imaging a die, The lens provided in the imaging device, A lighting device that emits illumination light, The illumination device forms a specular reflection region on or around the die, and during surface inspection, forms a dark-field region larger than the specular reflection region on the die, and the control unit is configured to repeatedly move the specular reflection region at a predetermined pitch and image the die, and to inspect a predetermined region of the dark-field region that is close to the specular reflection region, Equipped with, The illumination device is a bar illumination having an illumination surface that is longer in the first direction than in the second direction, and is configured to emit illumination light in a third direction along the optical axis of the imaging device. The control unit is configured to move the specular reflection region by moving the lighting device in the second direction, The imaging device is placed on the die, The illumination device is positioned to pass below the imaging device, The control unit is configured to not image the die when the illumination device is located below the lens in the semiconductor manufacturing apparatus.

11. In the semiconductor manufacturing apparatus of claim 1, The imaging device is a semiconductor manufacturing apparatus in which the optical axis is positioned perpendicular to the surface of the die.

12. In the semiconductor manufacturing apparatus of claim 1, The control unit is configured to move the lighting device in the second direction by a drive unit in a semiconductor manufacturing apparatus.

13. In the semiconductor manufacturing apparatus of claim 1, The die is one of the wafers bonded to a dicing tape in a semiconductor manufacturing apparatus.

14. An imaging device for imaging the die, The lens provided in the imaging device, A lighting device that emits illumination light, A control unit configured to use the illumination device to form a specular reflection region on or around the die, and to form a dark-field region larger than the specular reflection region on the die during surface inspection, move the specular reflection region at a predetermined pitch, image the die at that position, and repeatedly move the specular reflection region and image the die to inspect for defects in a predetermined area of ​​the dark-field region adjacent to the specular reflection region, Equipped with, The imaging device is positioned at least offset outward from the end of the die, The illumination device is a bar light having an illumination surface whose first direction is longer than that of the second direction, and is configured to emit illumination light in a third direction along the optical axis of the imaging device, and is positioned so as not to be in the field of view of the imaging device. The control unit is configured to move the illumination device or the imaging device in the second direction relative to the die, and to change the distance between the illumination device and the imaging device, thereby moving the specular reflection region along the second direction from outside one end of the die to outside the other end of the die.

15. A semiconductor manufacturing apparatus comprising an imaging device for imaging dies, a lens provided on the imaging device, and an illumination device for irradiating illumination light, is used to load a wafer ring that holds multiple dies in a wafer shape into the apparatus. An inspection process comprising: forming a specular reflection region on or around the die using the illumination device, forming a dark-field region larger than the specular reflection region on the die during surface inspection, moving the specular reflection region at a predetermined pitch, imaging the die at that position, and repeatedly moving the specular reflection region and imaging the die to inspect for defects in a predetermined area of ​​the dark-field region adjacent to the specular reflection region; Includes, The imaging device is positioned at least offset outward from the end of the die, The illumination device is a bar light having an illumination surface whose first direction is longer than that of the second direction, and is configured to emit illumination light in a third direction along the optical axis of the imaging device, and is positioned so as not to be in the field of view of the imaging device. A method for manufacturing a semiconductor device, wherein in the inspection step, the illumination device or the imaging device is moved relative to the die in the second direction, and the distance between the illumination device and the imaging device is changed, thereby moving the specular reflection region along the second direction from outside one end of the die to outside the other end of the die.

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