Semiconductor device, power converter, and method for manufacturing a semiconductor device

Abstract

To provide a semiconductor device that can have a lead frame positioned on a substrate without using a fixture, an electric power conversion device, and a method of manufacturing the semiconductor device.SOLUTION: A semiconductor device 100 comprises a semiconductor element 4, a substrate 20, a lead frame 3, and a resin-sealed body 7. The semiconductor element 4 is mounted on the substrate 20. The lead frame 3 is connected to the substrate 20 through one or more positioning parts 40. The resin sealing body 7 seals the semiconductor element 4, the substrate 20, and at least a part of the leaf frame 3. The substrate 20 includes a substrate-side positioning part 42 constituting a positioning part 40. The lead frame 3 includes a lead-side positioning part 41 constituting a positioning part 40. Either of the substrate-side positioning part 42 and the lead-side positioning part 41 has a projection part 43. At the other of the substrate-side positioning part 42 and the lead-side positioning part 41, an opening part 44 into which the projection part 43 is inserted is formed.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] The present disclosure relates to a semiconductor device, a power conversion device, and a method for manufacturing a semiconductor device.

Background Art

[0002] Conventionally, a semiconductor device including a substrate made of ceramic or the like and a lead frame is known. In such a semiconductor device, since the substrate and the lead frame are joined with a joining material such as solder, it is necessary to accurately define the relative positions of the substrate and the lead frame. As a technique for positioning the lead frame with respect to the substrate, for example, Japanese Patent Application Laid-Open No. 8-78598 discloses a method using a positioning jig.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In the above-described conventional technology, the heating process for joining is performed in a state where the positions of the substrate and the lead frame are defined by a positioning jig. When one jig is repeatedly used, the jig deteriorates due to the heating process. Therefore, it is necessary to periodically update the jig, which has been one of the factors increasing the manufacturing cost of the semiconductor device.

[0005] The present disclosure has been made to solve the above problems, and an object of the present disclosure is to provide a semiconductor device, a power conversion device, and a method for manufacturing a semiconductor device capable of positioning a lead frame with respect to a substrate without using a jig.

Means for Solving the Problems

[0006] A semiconductor device according to this disclosure comprises a semiconductor element, a substrate, a lead frame, and a resin encapsulant. The semiconductor element is mounted on the substrate. The lead frame is connected to the substrate via one or more positioning portions. The resin encapsulant encapsulates the semiconductor element, the substrate, and at least a portion of the lead frame. The substrate includes a substrate-side positioning portion that constitutes the positioning portion. The lead frame includes a lead-side positioning portion that constitutes the positioning portion. Either the substrate-side positioning portion or the lead-side positioning portion has a protrusion. The other of the substrate-side positioning portion or the lead-side positioning portion has an opening into which the protrusion is inserted.

[0007] The semiconductor device manufacturing method according to this disclosure includes the steps of preparing a substrate including a substrate-side positioning portion and a lead frame including a lead-side positioning portion. The position of the substrate-side positioning portion is determined based on an image of the substrate. The lead frame is positioned relative to the substrate by connecting the lead-side positioning portion to the substrate-side positioning portion whose position has been determined. A semiconductor element is mounted on the substrate. At least a portion of the semiconductor element, the substrate, and the lead frame is sealed with a resin encapsulant.

[0008] The power conversion device according to this disclosure comprises a main conversion circuit and a control circuit. The main conversion circuit has the above-mentioned semiconductor device and converts and outputs the input power. The control circuit outputs a control signal to the main conversion circuit to control the main conversion circuit. [Effects of the Invention]

[0009] According to the above, a semiconductor device, a power converter, and a method for manufacturing a semiconductor device can be obtained that can position a lead frame on a substrate without using a jig. [Brief explanation of the drawing]

[0010] [Figure 1] This is a schematic plan view of the semiconductor device according to Embodiment 1. [Figure 2]This is a schematic cross-sectional view of the line segment II-II in Figure 1. [Figure 3] Figure 1 is a plan view of the main components of the semiconductor device shown. [Figure 4] This is a schematic cross-sectional view of the line segment IV-IV in Figure 1. [Figure 5] Figure 4 is a schematic cross-sectional view of the line segment VV. [Figure 6] This is a schematic cross-sectional view showing a modified example of the semiconductor device shown in Figure 1. [Figure 7] This is a schematic cross-sectional view showing a modified example of the semiconductor device shown in Figure 1. [Figure 8] This is a schematic cross-sectional view showing a modified example of the semiconductor device shown in Figure 1. [Figure 9] This is a schematic cross-sectional view showing a modified example of the semiconductor device shown in Figure 1. [Figure 10] This is a schematic cross-sectional view showing a modified example of the semiconductor device shown in Figure 1. [Figure 11] This is a schematic cross-sectional view showing a modified example of the semiconductor device shown in Figure 1. [Figure 12] This is a schematic partial cross-sectional view showing a modified example of the semiconductor device shown in Figure 1. [Figure 13] This is a schematic partial cross-sectional view showing a modified example of the semiconductor device shown in Figure 1. [Figure 14] This is a schematic partial cross-sectional view showing a modified example of the semiconductor device shown in Figure 1. [Figure 15] This is a schematic partial cross-sectional view showing a modified example of the semiconductor device shown in Figure 1. [Figure 16] This is a schematic partial cross-sectional view showing a modified example of the semiconductor device shown in Figure 1. [Figure 17] Figure 16 is a schematic cross-sectional view of the line segment XVII-XVII. [Figure 18] This is a plan view of a modified example of the semiconductor device shown in Figure 1. [Figure 19] Figure 1 is a flowchart showing the method for manufacturing the semiconductor device. [Figure 20] Figure 1 is a schematic diagram illustrating the manufacturing method of the semiconductor device shown. [Figure 21] It is a schematic cross-sectional view of a semiconductor device according to Embodiment 2. [Figure 22] It is a plan view of the main part of the semiconductor device shown in FIG. 21. [Figure 23] It is a schematic partial cross-sectional view showing a modified example of the semiconductor device shown in FIG. 21. [Figure 24] It is a plan view of the main part showing a modified example of the semiconductor device shown in FIG. 21. [Figure 25] It is a schematic cross-sectional view taken along line XXV-XXV of FIG. 24. [Figure 26] It is a schematic cross-sectional view of a semiconductor device according to Embodiment 3. [Figure 27] It is a plan view of the main part of the semiconductor device shown in FIG. 26. [Figure 28] It is a schematic cross-sectional view showing a modified example of the semiconductor device shown in FIG. 26. [Figure 29] It is a plan view of the main part of the semiconductor device shown in FIG. 28. [Figure 30] It is a block diagram showing the configuration of a power conversion system according to Embodiment 4.

Embodiments for Carrying Out the Invention

[0011] Hereinafter, embodiments of the present disclosure will be described. The same components are denoted by the same reference numerals, and the description thereof will not be repeated. Also, XYZ orthogonal coordinates are defined such that the Z direction is the vertical direction and the XY plane is the horizontal plane. When positive and negative signs are assigned to the directions, the +X, +Y, and +Z directions will refer to the arrow directions of the orthogonal coordinates shown in each figure in the following description.

[0012] Embodiment 1 <Configuration of Semiconductor Device> Figure 1 is a schematic plan view of the semiconductor device 100 according to Embodiment 1. Figure 1 is a schematic plan view of the back side of the semiconductor device 100 in the XY plane. Figure 2 is a schematic cross-sectional view of the line segment II-II in Figure 1. Figure 3 is a plan view of the main part of the semiconductor device 100 shown in Figure 1. Figure 3 shows the positional relationship between the substrate 20 and the lead frame 3. Figure 4 is a schematic cross-sectional view of the line segment IV-IV in Figure 1. Figure 5 is a schematic cross-sectional view of the line segment VV in Figure 4.

[0013] The semiconductor device 100 shown in Figures 1 to 5 mainly comprises a semiconductor element 4, a control element 6, conductive wires 8 and 10, a substrate 20, a heat sink 1, a plurality of lead frames 3 which are power leads, a plurality of lead frames 5 which are control leads, and a resin encapsulant 7. The substrate 20 includes an insulating substrate 2 and a conductive layer 11 which is a pattern layer. The conductive layer 11 is arranged on the surface of the insulating substrate 2. The heat sink 1 is connected to the back surface of the insulating substrate 2, which is located opposite the surface. The heat sink 1 has a flat plate shape. The heat sink 1 is arranged to extend along the XY plane.

[0014] A semiconductor element 4 is mounted on the substrate 20. Specifically, the semiconductor element 4 is placed on the conductive layer 11 of the substrate 20 via a bonding material such as solder. The lead frame 3 is connected to the substrate 20 via two positioning parts 40. The configuration of the positioning parts 40 will be described later. The lead frame 3 is placed on the edge of the substrate 20. The lead frame 5 is placed on the edge of the substrate 20 opposite to the edge where the lead frame 3 is placed. The control element 6 is mounted on the lead frame 5 via a bonding material such as solder. The semiconductor element 4 is electrically connected to the lead frame 3 by a conductive wire 8, which is a power wire. The control element 6 is connected to the semiconductor element 4 by a conductive wire 10, which is a control wire. The control element 6 is connected to the lead frame 5 by another conductive wire 10, which is a control wire. The resin encapsulant 7 encapsulates the semiconductor element 4, the control element 6, the conductive wires 8 and 10, the substrate 20, a part of the heat sink 1, a part of the lead frame 3, and a part of the lead frame 5. In the heatsink 1, the second surface, located opposite the first surface connected to the substrate 20, is exposed to the outside of the resin encapsulation 7. The second surface of the heatsink 1 is the so-called heat dissipation surface. The resin encapsulation 7 is formed by transfer molding.

[0015] The lead frame 3 includes an internal power lead 31 and an external power lead 32. The internal power lead 31 is the portion located on the substrate 20 side of region 33. Region 33 is the region in the lead frame 3 that overlaps with the end of the resin encapsulation 7. The internal power lead 31 is the portion located inside the resin encapsulation 7. The internal power lead 31 is positioned to extend along the surface of the substrate 20. Conductive wires 8 are connected to the internal power lead 31. The external power lead 32 is the portion located outside region 33. The external power lead 32 is located outside the resin encapsulation 7. The external power lead 32 includes a first portion and a second portion. The first portion is connected to the internal power lead 31 and extends along the surface of the substrate 20. The second portion is connected to the first portion and extends in a direction perpendicular to the surface of the substrate 20 (specifically, in the +Z direction). In other words, the external power lead 32 is bent.

[0016] The lead frame 5 includes an internal control lead 51 and an external control lead 52. The internal control lead 51 is the portion located on the substrate 20 side of region 53. Region 53 is the region in the lead frame 5 that overlaps with the end of the resin encapsulant 7. The internal control lead 51 is the portion located inside the resin encapsulant 7. The internal control lead 51 is positioned to extend along the surface of the substrate 20. A control element 6 is mounted on the internal control lead 51. One end of another conductive wire 10 connected to the control element 6 is connected to the internal control lead 51. The external control lead 52 is the portion located outside region 53. The external control lead 52 is located outside the resin encapsulant 7. The external control lead 52 includes a first part and a second part. The first part is connected to the internal control lead 51 and extends along the surface of the substrate 20. The second part is connected to the first part and extends in a direction perpendicular to the surface of the substrate 20 (specifically, the +Z direction). In other words, the external control lead 52 is bent.

[0017] The substrate 20 includes a substrate-side positioning portion 42 that constitutes the positioning portion 40. The lead frame 3 includes a lead-side positioning portion 41 that constitutes the positioning portion 40. The lead-side positioning portion 41 is a protrusion 43 located at the tip of the internal power lead 31. The substrate-side positioning portion 42 is a conductive layer 11 positioned opposite the tip of the internal power lead 31. The conductive layer 11, which serves as the substrate-side positioning portion 42, has an opening 44 into which the protrusion 43 is inserted. In the positioning portion 40, the relative position of the lead frame 3 with respect to the substrate 20 is defined by the insertion of the protrusion 43 into the opening 44. For this reason, the width of the protrusion 43 is smaller than the width of the opening 44.

[0018] As shown in Figure 5, the cross-sectional shape of the protrusion 43 is rectangular. The cross-sectional shape of the opening 44 is also rectangular, following the shape of the protrusion 43. The outer periphery of the conductive layer 11, which serves as the substrate-side positioning portion 42 in which the opening 44 is formed, is also rectangular. By making the cross-sectional shape of the opening 44 and the protrusion 43 rectangular in this way, it is possible to prevent the protrusion 43 from rotating inside the opening 44. Therefore, the positioning portion 40 can prevent the lead frame 3 from rotating around the positioning portion 40, that is, from changing the orientation of the lead frame 3 relative to the substrate 20.

[0019] Furthermore, as will be described later, the arrangement of the protrusion 43 and the opening 44 may be reversed. That is, the substrate-side positioning portion 42 may be configured to have a protrusion. In this case, an opening may be formed in the lead-side positioning portion 41 into which the protrusion of the substrate-side positioning portion 42 is inserted.

[0020] The number of positioning units 40 is not particularly limited, but it is preferable to have two or more. In this case, tilting of the lead frame 3 relative to the substrate 20 can be suppressed. In the semiconductor device manufacturing process, since the outer periphery of the multiple lead frames 3 shown in Figure 3 and the like is connected to one another, positioning units 40 can be placed for each lead frame 3 relative to the substrate 20 even if positioning units 40 are not provided for all of the multiple lead frames 3.

[0021] The heat sink 1 dissipates heat generated inside the semiconductor device 100 to the outside by, for example, attaching heat dissipation fins (not shown). The material constituting the heat sink 1 is, for example, copper (Cu). However, the material of the heat sink 1 may be other metals, and is not limited to metals; inorganic or organic materials with high thermal conductivity may also be used.

[0022] The material constituting the insulating substrate 2 is an insulating inorganic or organic material. For example, alumina (Al2O3) and aluminum nitride (AlN) can be used as this material.

[0023] The material constituting the conductive layer 11 is a conductive inorganic or organic material. For example, copper (Cu) can be used as this material. The bonded heat sink 1, insulating substrate 2, and conductive layer 11 may be collectively referred to as the substrate.

[0024] The material constituting the lead frame 3, which is a power lead, is, for example, copper (Cu). A portion of the internal power leads 31 in the lead frame 3 is electrically connected to the conductive layer 11. The connection method between the internal power leads 31 and the conductive layer 11 can be by conductive wire, as shown in Figure 3, or by a bonding material such as solder. In addition, a Sn plating layer is formed on the surface of the external power leads 32 of the lead frame 3 as a coating layer.

[0025] The semiconductor element 4 is, for example, an IGBT (Insulated Gate Bipolar Transistor) made of silicon (Si) as the semiconductor material. As described above, the semiconductor element 4 is joined to the conductive layer 11 by a bonding material such as solder. In this case, the emitter electrode (not shown) of the IGBT semiconductor element 4 is connected to the internal power lead 31 by a conductive wire 8 acting as a power wire. The gate electrode (not shown) of the IGBT semiconductor element 4 is connected to the control element 6 by a conductive wire 10 acting as a control wire.

[0026] Furthermore, the semiconductor element 4 is not limited to IGBTs; other semiconductor elements such as MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) or diodes may also be used. Additionally, the semiconductor material constituting the semiconductor element 4 is not limited to silicon (Si); wide-bandgap semiconductor materials such as silicon carbide (SiC), gallium nitride (GaN), or diamond (C) may also be used.

[0027] The material constituting the lead frame 5 as a control lead is, for example, copper (Cu). As described above, the control element 6 is mounted on the internal control lead 51 of the lead frame 5. A Sn plating layer is formed on the surface of the external control lead 52 of the lead frame 5 as a coating layer. The control element 6 is joined to the internal control lead 51 by a bonding material such as solder. Silver paste or the like may be used as the bonding material.

[0028] The material constituting the resin encapsulant 7 is, for example, an insulating resin such as epoxy resin, silicone resin, or polyimide resin, or an insulating composite material in which a filler is dispersed in any of these resins.

[0029] <Effects and Effects> A semiconductor device 100 according to this disclosure comprises a semiconductor element 4, a substrate 20, a lead frame 3, and a resin encapsulant 7. The semiconductor element 4 is mounted on the substrate 20. The lead frame 3 is connected to the substrate 20 via one or more positioning portions 40. The resin encapsulant 7 encapsulates the semiconductor element 4, the substrate 20, and at least a portion of the lead frame 3. The substrate 20 includes a substrate-side positioning portion 42 that constitutes the positioning portion 40. The lead frame 3 includes a lead-side positioning portion 41 that constitutes the positioning portion 40. Either the substrate-side positioning portion 42 or the lead-side positioning portion 41 has a protrusion 43. An opening 44 into which the protrusion 43 is inserted is formed in the other of the substrate-side positioning portion 42 or the lead-side positioning portion 41.

[0030] In this way, by connecting the lead frame 3 to the substrate 20 via the positioning unit 40, the relative position of the lead frame 3 with respect to the substrate 20 can be accurately defined without using a separate jig or other fixture. In other words, high positional accuracy of the lead frame 3 with respect to the substrate 20 can be maintained without using a jig or other fixture. Therefore, the increase in manufacturing costs of semiconductor devices caused by the use of jigs can be suppressed.

[0031] Furthermore, when using the jig as a separate component as described above, it is necessary to position the lead frame 3 on the substrate 20 using the jig and then remove the jig. However, in the semiconductor device 100 according to this embodiment, the lead frame 3 is positioned on the substrate 20 without using a jig, so it is not necessary to perform the jig removal step described above. Therefore, it is possible to suppress an increase in the number of steps in the manufacturing process of the semiconductor device 100 and to improve the degree of freedom of the manufacturing process.

[0032] In the semiconductor device 100 described above, the lead-side positioning portion 41 may have a protrusion 43. The substrate-side positioning portion 42 may have an opening 44. In this case, the position of the lead frame 3 relative to the substrate 20 can be determined by the simple operation of inserting the protrusion 43 of the lead frame 3 into the opening 44 of the substrate 20.

[0033] In the semiconductor device 100 described above, the lead frame 3 may be connected to the substrate 20 via a plurality of positioning parts 40. In this case, tilting of the lead frame 3 relative to the substrate 20 can be suppressed.

[0034] <Configuration and Effects of Modified Semiconductor Devices> Figures 6 to 11 are schematic cross-sectional views showing modified examples of the semiconductor device 100 shown in Figure 1. Figures 6 to 11 correspond to Figure 5. Figures 6 to 11 are cross-sectional views of the positioning portion 40 in the horizontal plane (the plane along the surface of the substrate 20), showing the cross-sectional shapes of the opening 44 and the protrusion 43. In the positioning portion 40 of the semiconductor device 100 shown in Figures 1 to 5, the cross-sectional shape of the opening 44 and the protrusion 43 may be triangular, as shown in Figure 6. The outer peripheral shape of the conductive layer 11 as the substrate-side positioning portion 42 may also be triangular, or any other shape. The shape of the substrate-side positioning portion 42 does not have to completely enclose the protrusion 43; for example, it may be a shape that defines the position of one corner of a triangle and the side opposite that corner.

[0035] In the positioning portion 40, the cross-sectional shape of the opening 44 and the protrusion 43 may be trapezoidal, as shown in Figure 7. The outer periphery of the conductive layer 11 as the substrate-side positioning portion 42 may also be trapezoidal, or any other shape. The shape of the substrate-side positioning portion 42 does not have to completely enclose the protrusion 43; for example, it may be a shape that defines the position of one corner of the trapezoid and the corner opposite to that corner.

[0036] In the positioning portion 40, the cross-sectional shape of the opening 44 and the protrusion 43 may be a pentagon, as shown in Figure 8. The outer periphery of the conductive layer 11 as the substrate-side positioning portion 42 may also be a pentagon, or any other shape. The shape of the substrate-side positioning portion 42 does not have to completely enclose the protrusion 43; for example, it may be a shape that defines the position of one corner of the pentagon and the corner or side opposite to that corner.

[0037] In the positioning portion 40, the cross-sectional shape of the opening 44 and the protrusion 43 may be hexagonal, as shown in Figure 9. The outer peripheral shape of the conductive layer 11 as the substrate-side positioning portion 42 may also be hexagonal, or any other shape. The shape of the substrate-side positioning portion 42 does not have to completely enclose the protrusion 43; for example, it may be a shape that defines the position of one corner of the hexagon and the corner or side opposite to that corner.

[0038] In the positioning portion 40, the cross-sectional shape of the opening 44 and the protrusion 43 may be semicircular, as shown in Figure 10. The outer periphery of the conductive layer 11 as the substrate-side positioning portion 42 may also be semicircular, or any other shape. The shape of the substrate-side positioning portion 42 does not have to completely enclose the protrusion 43; for example, it may be a shape that defines a part of the semicircle and the position of the corner or side opposite that part of the semicircle.

[0039] In the positioning portion 40, the cross-sectional shape of the opening 44 and the protrusion 43 may be circular, as shown in Figure 11. The outer periphery of the conductive layer 11, which serves as the substrate-side positioning portion 42, may also be circular, or any other shape.

[0040] As shown in Figures 6 to 10, by making the cross-sectional shape of the opening 44 and the protrusion 43 a polygonal or semi-circular shape, or a shape other than a circle, it is possible to prevent the protrusion 43 from rotating inside the opening 44, similar to the positioning unit 40 shown in Figure 5. Therefore, the positioning unit 40 can prevent the orientation of the lead frame 3 relative to the substrate 20 from changing. In addition, the shape of the protrusion 43 shown in Figures 5 to 10 has high compatibility with the punching process, which is a manufacturing method for the lead frame 3 including the protrusion 43, so the lead frame 3 including these protrusions 43 can be easily manufactured.

[0041] As shown in Figure 11, by making the cross-sectional shape of the opening 44 and the protrusion 43 circular, the process of inserting the protrusion 43 into the opening 44 can be easily performed.

[0042] Figures 12 to 16 are schematic cross-sectional views showing modified versions of the semiconductor device shown in Figure 1. Figure 17 is a schematic cross-sectional view of the line segment XVII-XVII in Figure 16. Figures 12 to 16 show the positioning portion 40 or the protrusion 43. Modified versions of the semiconductor device shown in Figure 1 will be described below. Note that the semiconductor device equipped with the positioning portion 40 or the protrusion 43 shown in Figures 12 to 17 basically has the same configuration as the semiconductor device 100 shown in Figures 1 to 5, but the configuration of the positioning portion 40 differs from that of the semiconductor device 100 shown in Figures 1 to 5.

[0043] The semiconductor device shown in Figure 12 differs from the semiconductor device 100 shown in Figures 1 to 5 in the shape of the protrusion 43 in the positioning portion 40. Specifically, in the positioning portion 40 of the semiconductor device shown in Figure 12, the protrusion 43, which is the lead-side positioning portion 41, includes a front end 43a and a rear end 43b. The rear end 43b is located on the opposite side from the front end 43a. The protrusion 43 has a tapered shape in which the width W1 of the protrusion 43 gradually increases from the front end 43a towards the rear end 43b. For example, the shape of the protrusion 43 may be a square pyramidal shape. The width W1 at the front end 43a is smaller than the width of the opening 44. On the other hand, it is preferable that the width W1 at the rear end 43b is larger than the width of the opening 44. This makes it easier to insert the protrusion 43 into the opening 44. Furthermore, by pushing the protrusion 43 into the opening 44, the side surface of the protrusion 43 comes into contact with the upper part of the inner wall of the opening 44, causing the substrate-side positioning portion 42 on which the protrusion 43 or the opening 44 is formed to deform and fix the protrusion 43 within the opening 44. In other words, the substrate-side positioning portion 42 and the lead-side positioning portion 41 can be fixed to each other.

[0044] As a result, the lead frame 3, including the protrusion 43, can be fixed to the substrate 20 in which the opening 44 is formed. Therefore, even if vibrations due to transport of the substrate 20 or loads due to temperature changes are applied to the lead frame 3 during the semiconductor device manufacturing process, the occurrence of misalignment of the lead frame 3 relative to the substrate 20 can be suppressed. Furthermore, in processes where the positional accuracy of the lead frame 3 and the substrate 20 is important, such as the wire bonding process to the lead frame 3, there is no need to reposition the lead frame 3 because the lead frame 3 is fixed to the substrate 20 by the positioning part 40. Therefore, the semiconductor device manufacturing process can be simplified.

[0045] The semiconductor device shown in Figure 13 has basically the same configuration as the semiconductor device shown in Figure 12, but the shape of the opening 44 is different from that of the semiconductor device shown in Figure 12. Specifically, in the semiconductor device shown in Figure 13, the opening 44 includes a tapered portion 441 and a parallel portion 442. The tapered portion 441 is located on the side of the opening 44 that faces the lead frame 3. The parallel portion 442 is located on the opposite side (the insulating substrate 2 side) from the side facing the lead frame 3 when viewed from the tapered portion 441. The tapered portion 441 becomes wider as it moves away from the parallel portion 442.

[0046] In this way, the side of the opening 44 facing the lead frame 3 can be widened, making it easier to insert the protrusion 43 of the lead-side positioning portion 41 on the lead frame 3 into the opening 44. Also, similar to the semiconductor device shown in Figure 12, by pushing the protrusion 43 into the opening 44, the side surface of the protrusion 43 and the upper part of the parallel portion 442 of the opening 44 come into contact, and the substrate-side positioning portion 42 on which the protrusion 43 or the opening 44 is formed deforms, fixing the protrusion 43 inside the opening 44. In this case, it is preferable that the width of the tip portion 43a of the protrusion 43 is smaller than the width of the parallel portion 442. Also, it is preferable that the width of the rear end portion 43b of the protrusion 43 is larger than the width of the parallel portion 442. In this case, the tapered portion of the protrusion 43 can be reliably fixed inside the opening 44.

[0047] The semiconductor device shown in Figures 14 and 15 differs from the semiconductor device 100 shown in Figures 1 to 5 in the shape of the protrusion 43 in the positioning portion 40. Specifically, in the positioning portion 40 of the semiconductor device shown in Figures 14 and 15, the protrusion 43 has a wide portion 431 and a narrow portion 432. The width W2 of the wide portion 431 in the Y direction is greater than the width W3 of the narrow portion 432 in the Y direction. The wide portion 431 and the narrow portion 432 are aligned in the direction (X direction) along the surface of the insulating substrate 2. As shown in Figure 15, the surface of the wide portion 431 is curved.

[0048] As shown in Figure 15, with the protrusion 43 inserted into the opening 44, the outer peripheral surface of the wide portion 431 is in contact with the inner peripheral surface of the opening 44. At this time, the outer peripheral surface of the wide portion 431 is pressing against the inner peripheral surface of the opening 44. In other words, the width of the opening 44 in the Y direction is set to be substantially the same as the width W2 of the wide portion 431, or slightly smaller than the width W2. When the protrusion 43 is pushed into the opening 44, the outer peripheral surface of the wide portion 431 comes into contact with the inner peripheral surface of the opening 44, and at least one of the wide portion 431 or the substrate-side positioning portion 42 in which the opening 44 is formed is deformed. As a result, the protrusion 43 is fixed inside the opening 44. With this configuration, the same effects as those of the semiconductor device shown in Figure 12 or Figure 13 can be obtained.

[0049] The semiconductor device shown in Figures 16 and 17 differs from the semiconductor device 100 shown in Figures 1 to 5 in the shape of the protrusion 43 in the positioning portion 40. Specifically, in the positioning portion 40 of the semiconductor device shown in Figures 16 and 17, the width W2 of the protrusion 43 of the lead-side positioning portion 41 is substantially the same as, or slightly larger than, the width W4 of the opening 44. The width W2 of the protrusion 43 is set so that the protrusion 43 can be press-fitted into the opening 44. In this case as well, as the protrusion 43 is pushed into the opening 44, the side surface of the protrusion 43 (side surface in the Y direction) contacts the inner circumferential surface of the opening 44, and at least one of the protrusion 43 or the substrate-side positioning portion 42 in which the opening 44 is formed is deformed. As a result, the protrusion 43 is fixed inside the opening 44. This configuration also provides the same effects as the semiconductor device shown in Figure 12 or 13.

[0050] Furthermore, in order to facilitate insertion of the tip of the protrusion 43 into the opening 44, a tapered portion may be formed at the tip of the protrusion 43. Specifically, the width of the protrusion 43 in the Y direction shown in Figure 17 may be tapered at the tip of the protrusion 43, with the width gradually narrowing.

[0051] Figure 18 is a plan view of a modified semiconductor device shown in Figure 1, showing a key part. Figure 18 corresponds to Figure 3. The semiconductor device shown in Figure 18 differs from the semiconductor device 100 shown in Figures 1 to 5 in the number of positioning parts 40. Specifically, the semiconductor device shown in Figure 18 has three positioning parts 40. In this case, tilting of the lead frame 3 relative to the substrate 20 can be further suppressed during the manufacturing process of the semiconductor device.

[0052] <Manufacturing method for semiconductor devices> Figure 19 is a flowchart illustrating the manufacturing method of the semiconductor device 100 shown in Figure 1. Figure 20 is a schematic diagram illustrating the manufacturing method of the semiconductor device shown in Figure 1. Figure 20 shows a block diagram of a processing device used to position and fix the lead frame 3 to the substrate 20 in the manufacturing method of the semiconductor device 100.

[0053] As shown in Figure 19, the manufacturing method of the semiconductor device 100 includes a preparation step (S10). In this step (S10), the components of the semiconductor device 100 are prepared. Examples of these components include a substrate 20, a heat sink 1, a lead frame 3, a lead frame 5, a semiconductor element 4, and a control element 6. Here, the heat sink 1 may be pre-connected to the substrate 20. Also, the semiconductor element 4 may be pre-mounted on the substrate 20.

[0054] Next, the substrate transport process (S20) is performed. In this process (S20), the substrate 20 to which the heat sink 1 is attached is transported to a processing stage (not shown) by the substrate transport unit 23 of the processing device. At this time, the substrate 20 may be transported in a state where it is positioned only in the X direction as shown in Figure 3.

[0055] The processing unit mainly comprises a control unit 21, an imaging unit 22, a substrate transport unit 23, and a lead operation unit 24, as shown in Figure 20. The control unit 21 is connected to the imaging unit 22, the substrate transport unit 23, and the lead operation unit 24. The control unit 21 transmits control signals to the imaging unit 22 and receives image data captured by the imaging unit 22. The control unit 21 transmits control signals to the substrate transport unit 23 and the lead operation unit 24. The imaging unit 22 can be any configuration, such as a CCD camera, as long as it can photograph the substrate 20 and acquire image data. The substrate transport unit 23 can be any conventionally known configuration, as long as it can transport the substrate 20. The lead operation unit 24 can be any configuration, such as a robot arm, as long as it can grip the lead frame 3 and move the lead frame 3 to any desired position.

[0056] Next, the recognition process (S30) is performed. In process (S30), the imaging unit 22 captures an image of the substrate 20 on the processing stage. Based on the image of the substrate 20, the position of the substrate-side positioning portion 42 (see Figure 3) is determined. Specifically, the image data of the substrate 20 captured by the imaging unit 22 is transmitted to the control unit 21. Upon receiving the image data, the control unit 21 determines the position of the substrate-side positioning portion 42 on the substrate 20 through image processing.

[0057] Next, the insertion process (S40) is performed. In this process (S40), the lead frame 3 (see Figure 3) is positioned relative to the substrate 20 (see Figure 3) by connecting the lead-side positioning portion 41 to the substrate-side positioning portion 42 whose position has been identified. Specifically, based on the position information of the identified substrate-side positioning portion 42, a control signal is transmitted from the control unit 21 to the lead operation unit 24. The lead operation unit 24 holds a plurality of lead frames 3. The plurality of lead frames 3 are connected to and integrated with an outer peripheral frame (not shown) on the opposite side of the end where the lead-side positioning portion 41 is formed. In addition, a lead frame 5 (see Figure 2) may be connected to the outer peripheral frame at a position opposite to the lead frame 3. Based on the control signal, the lead operation unit 24 inserts the protrusion 43 of the lead-side positioning portion 41 into the opening 44 of the substrate-side positioning portion 42. In other words, the lead-side positioning portion 41 is connected to the substrate-side positioning portion 42. As a result, the lead frame 3 is positioned relative to the substrate 20.

[0058] Next, a post-processing step (S50) is performed. In this step (S50), steps are taken to mount semiconductor elements 4 on the substrate 20, to mount control elements 6 on the lead frame 5, to arrange conductive wires 8 and 10 by wire bonding, and to seal at least a portion of the substrate 20, semiconductor elements 4, lead frame 3, and lead frame 5 with a resin encapsulant 7 (see Figure 2) by the transfer molding method. In this way, the semiconductor device 100 can be obtained.

[0059] In the semiconductor device manufacturing method described above, in step (S40), the lead-side positioning portion 41 is connected to the substrate-side positioning portion 42, so that the relative position of the lead frame 3 with respect to the substrate 20 can be accurately determined without using a jig. Therefore, the semiconductor device manufacturing process can be simplified compared to when a jig is used. In addition, since the lead frame 3 is fixed to the substrate 20, the effort of repositioning the lead frame 3 in processes where positional accuracy is important, such as the wire bonding process for arranging the conductive wires 8 and 10, can be avoided. This allows for greater flexibility in the semiconductor device manufacturing process.

[0060] Embodiment 2. <Configuration and effects of semiconductor devices> Figure 21 is a schematic cross-sectional view of the semiconductor device 200 according to Embodiment 2. Figure 22 is a plan view of the main part of the semiconductor device 200 shown in Figure 21. Figure 21 corresponds to Figure 4, and Figure 22 corresponds to Figure 3.

[0061] The semiconductor device 200 shown in Figures 21 and 22 basically has the same configuration as the semiconductor device 100 shown in Figures 1 to 5, but the configuration of the positioning portion 40 differs from that of the semiconductor device 100 shown in Figures 1 to 5. Specifically, the opening 44 of the substrate-side positioning portion 42 on the substrate 20 is formed on the surface of the insulating substrate 2. In other words, the substrate-side positioning portion 42 is part of the insulating substrate 2. The protrusion 43, which is the lead-side positioning portion 41 of the lead frame 3, is inserted into this opening 44.

[0062] This configuration also provides the same effects as the semiconductor device 100 shown in Figures 1 to 5. The manufacturing method for the semiconductor device 200 is basically the same as that for the semiconductor device 100.

[0063] <Configuration and Effects of Modified Semiconductor Devices> Figure 23 is a schematic partial cross-sectional view showing a modified example of the semiconductor device 200 shown in Figure 21. Figure 23 shows the positioning portion 40 in the modified example of the semiconductor device 200. The semiconductor device shown in Figure 23 basically has the same configuration as the semiconductor device 200 shown in Figures 21 and 22, but the configuration of the positioning portion 40 is different from that of the semiconductor device 200 shown in Figures 21 and 22. That is, in the semiconductor device shown in Figure 23, the positioning portion 40 includes a reinforcing member 25. The reinforcing member 25 is filled inside the opening 44 together with the protrusion 43. In other words, the reinforcing member 25 connects and fixes the protrusion 43 to the inner wall of the opening 44.

[0064] In this case, the reinforcing material 25 reliably prevents the protrusion 43 from coming out of the opening 44. Furthermore, since the reinforcing material 25 increases the strength of the portion of the insulating substrate 2 where the opening 44 is formed, it is possible to suppress the occurrence of defects such as cracking of the insulating substrate 2 in the portion where the opening 44 is formed.

[0065] Figure 24 is a plan view of a modified semiconductor device shown in Figure 21. Figure 25 is a schematic cross-sectional view of the line segment XXV-XXV in Figure 24. Figure 24 corresponds to Figure 22. Figure 25 corresponds to Figure 21.

[0066] The semiconductor device 200 shown in Figures 24 and 25 has basically the same configuration as the semiconductor device 200 shown in Figures 21 and 22, but the configuration of the positioning section 40 differs from that of the semiconductor device 200 shown in Figures 21 and 22. Specifically, in the semiconductor device 200 shown in Figures 24 and 25, two positioning sections 40 are arranged on one lead frame 3. One of the two positioning sections 40 is located on the surface of the insulating substrate 2, and the other positioning section 40 is located on the end face of the insulating substrate 2.

[0067] An opening 44a is formed on the surface of the insulating substrate 2. An opening 44b is formed on the end face of the insulating substrate 2. The lead frame 3 includes an internal power lead portion 31a extending on the surface of the insulating substrate 2 and an internal power lead portion 31b extending to a position facing the end face of the insulating substrate 2. The tip of the internal power lead portion 31a, which is the protrusion 43 of the lead-side positioning portion 41, is inserted and fixed into the opening 44a. The tip of the internal power lead portion 31b, which is the protrusion 43 of the lead-side positioning portion 41, is inserted and fixed into the opening 44b. The extending direction of the protrusion 43 inserted into the opening 44a and the extending direction of the protrusion 43 inserted into the opening 44b intersect.

[0068] This configuration also provides the same effects as the semiconductor device 200 shown in Figures 21 and 22. Furthermore, the two positioning parts 40 allow for more precise definition of the relative position of the lead frame 3 with respect to the substrate 20. In addition, since the extension directions of the respective protrusions 43 in the two positioning parts 40 intersect, the protrusions 43 are less likely to come out of the openings 44a and 44b. Therefore, even if the substrate 20 is subjected to vibration or other forces, or if the substrate 20 undergoes thermal deformation, the possibility of the lead frame 3 shifting relative to the substrate 20 can be reduced.

[0069] Furthermore, in a single lead frame, only the lead-side positioning portion 41, which is a protrusion 43 that can be inserted into an opening 44b formed on the end face of the insulating substrate 2, may be formed. Also, in the semiconductor device 200 described above, since the opening 44 is formed in the insulating substrate 2, the thickness of the insulating substrate 2 is not uniform. For this reason, it is preferable to ensure insulation performance by considering the thickness of the insulating substrate 2 in the portion where the opening 44 is formed.

[0070] Embodiment 3. <Configuration of semiconductor device> Figure 26 is a schematic cross-sectional view of the semiconductor device 300 according to Embodiment 3. Figure 27 is a plan view of the main part of the semiconductor device 300 shown in Figure 26. Figure 26 corresponds to Figure 4. Figure 27 corresponds to Figure 3.

[0071] The semiconductor device 300 shown in Figures 26 and 27 basically has the same configuration as the semiconductor device 100 shown in Figures 1 to 5, but the configuration of the positioning portion 40 differs from that of the semiconductor device 100 shown in Figures 1 to 5. Specifically, a protrusion 43, which is the substrate-side positioning portion 42, is formed on the substrate 20. In addition, an opening 44 is formed in the lead-side positioning portion 41 of the lead frame 3. The protrusion 43, which is the substrate-side positioning portion 42, is inserted and fixed into this opening 44.

[0072] This configuration also allows for the same effects as the semiconductor device 100 shown in Figures 1 to 5. The manufacturing method for the semiconductor device 300 is basically the same as that for the semiconductor device 100.

[0073] In the semiconductor device 300 described above, the configuration of the protrusions 43 and the openings 44 may be the configuration shown in Figures 5 to 17 of Embodiment 1. Furthermore, the number of positioning parts 40 in the semiconductor device 300 may be three or more. The material constituting the protrusions 43 may be the same as the material constituting the conductive layer 11. In this case, the protrusions 43 can be formed simultaneously in the process of forming the conductive layer 11. The material constituting the protrusions 43 may be different from the material constituting the conductive layer 11. In this case, the material and height of the protrusions 43 can be defined independently of the material and thickness of the conductive layer 11.

[0074] <Effects and Effects> In the semiconductor device 300 described above, an opening 44 may be formed in the lead-side positioning portion 41. The substrate-side positioning portion may have a protrusion 43. In this case, by inserting and fixing the protrusion 43 on the substrate 20 side into the opening 44 on the lead frame 3 side, the lead frame 3 can be accurately positioned relative to the substrate 20.

[0075] <Configuration and Effects of Modified Semiconductor Devices> Figure 28 is a schematic cross-sectional view showing a modified example of the semiconductor device shown in Figure 26. Figure 29 is a plan view of the main part of the semiconductor device shown in Figure 28. Figure 28 corresponds to Figure 4. Figure 29 corresponds to Figure 3.

[0076] The semiconductor device 300 shown in Figures 28 and 29 has basically the same configuration as the semiconductor device 300 shown in Figures 26 and 27, but the configuration of the positioning portion 40 is different from that of the semiconductor device 300 shown in Figures 26 and 27. Specifically, on the substrate 20, a protrusion 43, which is the substrate-side positioning portion 42, is formed on the conductive layer 11. Even with this configuration, the same effects as the semiconductor device 300 shown in Figures 26 and 27 can be obtained.

[0077] Furthermore, if multiple positioning portions 40 are formed on the substrate 20 of the semiconductor device 300, the protrusions 43 formed on the surface of the insulating substrate 2 and the protrusions 43 formed on the conductive layer 11 may be mixed together. Also, the conductive layer 11 on which the semiconductor element 4 is mounted and the conductive layer 11 on which the protrusions 43 are formed may not be independent but integrated together.

[0078] Embodiment 4. This embodiment applies a semiconductor device according to any of the above-described embodiments 1 to 3 to a power converter. This disclosure is not limited to a specific power converter, but below, as embodiment 4, a case in which this disclosure is applied to a three-phase inverter will be described.

[0079] Figure 30 is a block diagram showing the configuration of a power conversion system to which the power conversion device according to this embodiment is applied.

[0080] The power conversion system shown in Figure 30 consists of a power source 500, a power converter 600, and a load 700. The power source 500 is a DC power source and supplies DC power to the power converter 600. The power source 500 can be composed of various components, for example, a DC grid, a solar cell, or a battery, or it may be composed of a rectifier circuit or AC / DC converter connected to an AC grid. Alternatively, the power source 500 may be composed of a DC / DC converter that converts DC power output from a DC grid into a predetermined power.

[0081] The power converter 600 is a three-phase inverter connected between the power supply 500 and the load 700. It converts the DC power supplied from the power supply 500 into AC power and supplies the AC power to the load 700. As shown in Figure 30, the power converter 600 includes a main conversion circuit 601 that converts DC power into AC power and outputs it, and a control circuit 603 that outputs a control signal to the main conversion circuit 601 to control the main conversion circuit 601.

[0082] Load 700 is a three-phase electric motor driven by AC power supplied from power converter 600. Note that Load 700 is not limited to a specific application; it is an electric motor installed in various electrical devices, such as hybrid vehicles, electric vehicles, railway vehicles, elevators, or air conditioning equipment.

[0083] The details of the power converter 600 are described below. The main conversion circuit 601 is equipped with switching elements and freewheeling diodes (not shown), and by switching the switching elements, it converts the DC power supplied from the power supply 500 into AC power and supplies it to the load 700. There are various specific circuit configurations for the main conversion circuit 601, but the main conversion circuit 601 according to this embodiment is a two-level three-phase full-bridge circuit and can be composed of six switching elements and six freewheeling diodes antiparallel to each switching element. At least one of each switching element and each freewheeling diode of the main conversion circuit 601 is a switching element or freewheeling diode that has been installed in a semiconductor device 602 corresponding to any of the semiconductor devices described in Embodiments 1 to 3 above. The six switching elements are connected in series in pairs to form upper and lower arms, and each upper and lower arm constitutes each phase (U phase, V phase, W phase) of the full-bridge circuit. The output terminals of each upper and lower arm, i.e., the three output terminals of the main conversion circuit 601, are connected to the load 700.

[0084] Furthermore, the main conversion circuit 601 includes a drive circuit (not shown) for driving each switching element. The drive circuit may be built into the semiconductor device 602, or it may be configured to be a separate drive circuit from the semiconductor device 602. The drive circuit generates a drive signal to drive the switching elements of the main conversion circuit 601 and supplies it to the control electrodes of the switching elements of the main conversion circuit 601. Specifically, according to the control signal from the control circuit 603, which will be described later, it outputs a drive signal to turn on the switching element and a drive signal to turn off the switching element to the control electrodes of each switching element. When the switching element is kept in the ON state, the drive signal is a voltage signal (ON signal) that is greater than or equal to the threshold voltage of the switching element, and when the switching element is kept in the OFF state, the drive signal is a voltage signal (OFF signal) that is less than or equal to the threshold voltage of the switching element.

[0085] The control circuit 603 controls the switching elements of the main converter circuit 601 so that the desired power is supplied to the load 700. Specifically, it calculates the time (on time) that each switching element of the main converter circuit 601 should be in the ON state based on the power to be supplied to the load 700. For example, the main converter circuit 601 can be controlled by PWM control, which modulates the on time of the switching elements according to the voltage to be output. The control circuit then outputs a control command (control signal) to the drive circuit of the main converter circuit 601 so that an ON signal is output to the switching elements that should be in the ON state at each point in time, and an OFF signal is output to the switching elements that should be in the OFF state. The drive circuit outputs an ON signal or an OFF signal as a drive signal to the control electrode of each switching element according to this control signal.

[0086] In the power conversion device according to this embodiment, since a semiconductor device according to any of Embodiments 1 to 3 is used as the semiconductor device 602 constituting the main conversion circuit 601, manufacturing costs can be reduced.

[0087] In this embodiment, an example of applying the present disclosure to a two-level three-phase inverter has been described, but the present disclosure is not limited to this and can be applied to various power conversion devices. In this embodiment, a two-level power conversion device is used, but a three-level or multi-level power conversion device may also be used, and the present disclosure may be applied to a single-phase inverter when supplying power to a single-phase load. Furthermore, when supplying power to a DC load, the present disclosure can also be applied to a DC / DC converter or an AC / DC converter.

[0088] Furthermore, the power conversion device to which this disclosure is applied is not limited to cases where the load is an electric motor, but can also be used, for example, as a power supply for an electrical discharge machine, a laser processing machine, an induction heating cooker, or a non-contact power supply system, and can even be used as a power conditioner for a solar power generation system or an energy storage system.

[0089] The embodiments disclosed herein should be considered in all respects as illustrative and not restrictive. At least two of the disclosed embodiments may be combined, provided they do not contradict each other. Furthermore, variations and configurations may be omitted as appropriate in each embodiment. The basic scope of this disclosure is indicated by the claims rather than the foregoing description, and all modifications within the meaning and scope equivalent to the claims are intended. [Explanation of symbols]

[0090] 1 Heat sink, 2 Insulating substrate, 3, 5 Lead frame, 4 Semiconductor element, 6 Control element, 7 Resin encapsulant, 8, 10 Conductive wire, 11 Conductive layer, 20 Substrate, 21 Control unit, 22 Imaging unit, 23 Substrate transport unit, 24 Lead operation unit, 25 Reinforcement material, 31 Internal power lead, 31a, 31b Internal power lead portion, 32 External power lead, 33, 53 Region, 40 Positioning unit, 41 Lead-side positioning portion, 42 Substrate-side positioning portion, 43 Protrusion, 43a Tip, 43b Rear end, 44, 44a, 44b Opening, 51 Internal control lead, 52 External control lead, 100, 200, 300, 602 Semiconductor device, 603 Control circuit, 431 Wide portion, 432 Narrow portion, 441 Tapered portion, 442 Parallel section, 500 power supply, 600 power converter, 601 main conversion circuit, 700 load.

Claims

1. Semiconductor elements and A substrate on which the aforementioned semiconductor element is mounted, A lead frame connected to the substrate via one or more positioning parts, The device comprises a resin encapsulant that seals the semiconductor element, the substrate, and at least a portion of the lead frame, The substrate comprises the positioning portion and includes a substrate-side positioning portion. The lead frame includes a lead-side positioning portion that constitutes the positioning section, Either the substrate-side positioning portion or the lead-side positioning portion has a protrusion, An opening into which the protrusion is inserted is formed in either the substrate-side positioning portion or the lead-side positioning portion. The opening includes a tapered portion formed on the side into which the protrusion is inserted, and a parallel portion connected to the tapered portion. The tapered portion widens as it approaches the side of the opening into which the protrusion is inserted. The aforementioned protrusion includes a tip portion and a rear end portion located on the opposite side of the tip portion. The width of the tip portion is smaller than the width of the parallel portion. A semiconductor device wherein the width of the rear end is greater than the width of the parallel portion, and the width of the rear end is smaller than the width of the tapered portion on the side into which the protrusion is inserted.

2. The semiconductor device according to claim 1, wherein the protrusion has a tapered shape in which the width of the protrusion gradually increases from the tip to the rear end.

3. The semiconductor device according to claim 1 or 2, wherein the positioning portion is located inside the opening and includes a reinforcing member that connects the protrusion and the inner wall of the opening.

4. The semiconductor device according to any one of claims 1 to 3, wherein the substrate-side positioning portion and the lead-side positioning portion are fixable to each other.

5. The lead-side positioning portion has the protrusion, The semiconductor device according to any one of claims 1 to 4, wherein the opening is formed in the substrate-side positioning portion.

6. The semiconductor device according to any one of claims 1 to 5, wherein the lead frame is connected to the substrate via a plurality of positioning parts.

7. A step of preparing a substrate including a substrate-side positioning portion and a lead frame including a lead-side positioning portion, A step of determining the position of the positioning portion on the substrate side based on an image taken of the substrate, The process of positioning the lead frame relative to the substrate by connecting the lead-side positioning portion to the substrate-side positioning portion whose position has been identified, The process of mounting semiconductor elements onto the aforementioned substrate, The process includes sealing at least a portion of the semiconductor element, the substrate, and the lead frame with a resin encapsulant, Either the substrate-side positioning portion or the lead-side positioning portion has a protrusion, An opening into which the protrusion is inserted is formed in either the substrate-side positioning portion or the lead-side positioning portion. The opening includes a tapered portion formed on the side into which the protrusion is inserted, and a parallel portion connected to the tapered portion. The tapered portion widens as it approaches the side of the opening into which the protrusion is inserted. The aforementioned protrusion includes a tip portion and a rear end portion located on the opposite side of the tip portion. The width of the tip portion is smaller than the width of the parallel portion. A method for manufacturing a semiconductor device, wherein the width of the rear end is greater than the width of the parallel portion, and the width of the rear end is smaller than the width of the tapered portion on the side into which the protrusion is inserted.

8. A semiconductor device according to claim 1, comprising a main conversion circuit that converts and outputs input power, A control circuit that outputs a control signal to the main conversion circuit to control the main conversion circuit, A power conversion device equipped with this device.

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