Wiring component and method for manufacturing the same
The wiring member design addresses reliability issues by ensuring the conductive film covers the side surfaces of through-holes and positions the end face of the film to suppress beam deflection, enhancing manufacturing reliability and performance.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- KK TOSHIBA
- Filing Date
- 2023-03-22
- Publication Date
- 2026-05-19
AI Technical Summary
Existing wiring members with through-holes face issues in maintaining reliability due to potential charging and abnormal deflection of charged particle beams caused by exposure of insulating layer surfaces during manufacturing processes.
The wiring member design includes a first through-hole with a wider width than the second through-hole, ensuring the conductive film covers the side surfaces of the second through-hole, and the end face of the conductive film is positioned to suppress charging and beam deflection, while the insulating layer is not exposed at critical points.
This design enhances the reliability of the wiring member by preventing abnormal deflection of charged particle beams and maintaining the antistatic function, thereby improving manufacturing consistency and performance.
Smart Images
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Abstract
Description
Technical Field
[0001] Embodiments of the present invention relate to a wiring member and a method for manufacturing the same.
Background Art
[0002] In a wiring member having through-holes, it may be required to coat the side surfaces of the through-holes with a conductive film.
Prior Art Documents
Patent Documents
[0003]
Patent Document 1
Summary of the Invention
Problems to be Solved by the Invention
[0004] Embodiments of the present invention aim to provide a wiring member and a method for manufacturing the same that can improve reliability.
Means for Solving the Problems
[0005] According to an embodiment of the present invention, the wiring member comprises a substrate having a first surface, a second surface located opposite to the first surface in a first direction, and a first through-hole extending in the first direction; and a wiring portion provided on the first surface of the substrate and having an insulating layer, a wiring layer provided within the insulating layer, a second through-hole extending in the first direction and continuous with the first through-hole, and a conductive film provided on the side surface of the second through-hole, wherein the width of the first through-hole is greater than the width of the second through-hole in a direction perpendicular to the first direction, the first through-hole extends into a part of the wiring portion in the first direction, the side surface of the first through-hole has a first side surface located on the substrate and a second side surface located in a part of the wiring portion, and the wiring portion has a third surface facing the first surface of the substrate, a fourth surface located opposite to the third surface in the first direction, and a fifth surface continuous with the second side surface of the first through-hole and the side surface of the conductive film, including the end face of the conductive film in the first direction. [Brief explanation of the drawing]
[0006] [Figure 1] (a) is a schematic plan view of the wiring member of the embodiment, and (b) is a cross-sectional view AA in Figure 1(a). [Figure 2] (a) and (b) are schematic cross-sectional views showing the manufacturing method of the wiring member according to the embodiment. [Figure 3] (a) is a schematic plan view of a wiring member according to a modified embodiment, and (b) is a cross-sectional view of BB in Figure 3(a). [Figure 4] (a) and (b) are schematic cross-sectional views showing a manufacturing method for a wiring member of a comparative example. [Modes for carrying out the invention]
[0007] Each embodiment will be described below with reference to the drawings. Drawings are schematic or conceptual, and the relationships between the thickness and width of each part, as well as the ratios of the sizes of different parts, are not necessarily identical to those of reality. Even when representing the same part, the dimensions and ratios may differ between drawings. Furthermore, identical or similar elements are assigned the same symbol.
[0008] Figure 1(a) is a schematic plan view of the wiring member 1 of the embodiment, and Figure 1(b) is a cross-sectional view AA in Figure 1(a). The wiring member 1 comprises a substrate 10 and a wiring section 20. The substrate 10 and the wiring section 20 are stacked in the first direction Z. Two directions perpendicular to the first direction Z are denoted as the second direction X and the third direction Y. The second direction X and the third direction Y are perpendicular to each other.
[0009] The substrate 10 has a first surface 11 and a second surface 12 located opposite the first surface 11 in a first direction Z. The substrate 10 also has a first through hole 13 that penetrates from the first surface 11 to the second surface 12 and extends in the first direction Z. The substrate 10 is, for example, a silicon substrate.
[0010] The wiring section 20 is provided on the first surface 11 of the substrate 10. The wiring section 20 has a third surface 23 facing the first surface 11 of the substrate 10 and a fourth surface 24 located on the opposite side of the third surface 23 in the first direction Z. The wiring section 20 has an insulating layer 34 and wiring layers 32 provided within the insulating layer 34. The wiring section 20 may have, for example, multiple wiring layers 32 and conductive vias 33 connecting different layers of wiring layers 32. The wiring section 20 also has a second through hole 31 that extends in the first direction Z and is continuous with the first through hole 13 in the first direction Z.
[0011] The wiring section 20 further has a conductive film 40 provided on the side surface 31a of the second through hole 31. The conductive film 40 can also be provided on the fourth surface 24 of the wiring section 20. Furthermore, the conductive film 40 provided on the fourth surface 24 of the wiring section 20 can be patterned. As the conductive film 40, for example, a titanium film, a titanium nitride film, or a laminated film of a titanium film and a titanium nitride film can be used.
[0012] As shown in Figure 1(a), in a plan view, the second through-hole 31 and the first through-hole 13 are rectangular in shape. The conductive film 40 continuously covers the entire surface of the side surface 31a of the second through-hole 31. In addition, the axis passing through the center of the second through-hole 31 (in this example, the intersection of the two diagonals of the rectangular second through-hole 31) is virtually represented as the central axis C of the second through-hole 31 in Figure 1(b).
[0013] In directions perpendicular to the first direction Z (second direction X and third direction Y), the width of the first through-hole 13 is greater than the width of the second through-hole 31. The first through-hole 13 extends into a part of the wiring portion 20 in the first direction Z, and the side surface of the first through-hole 13 has a first side surface portion 13a located on the substrate 10 and a second side surface portion 13b located on a part of the wiring portion 20. In the second side surface portion 13b, the insulating layer 34 is exposed in the first through-hole 13.
[0014] The first side portion 13a and the second side portion 13b are continuous in the first direction Z without forming a step. A step is formed between the side surface of the first through hole 13 and the side surface 31a of the second through hole 31. A step is also formed between the side surface of the first through hole 13 and the side surface 41 of the conductive film 40.
[0015] The wiring section 20 further has a fifth surface 25 that is continuous with the second side surface 13b of the first through hole 13 and the side surface 41 of the conductive film 40. The fifth surface 25 is located at the boundary between the first through hole 13 and the second through hole 31. A step is formed between the fifth surface 25 and the third surface 23. As shown in Figure 1(a), the fifth surface 25 is formed in an annular shape between the side surface 41 of the conductive film 40 and the second side surface 13b of the first through hole 13. As shown in Figure 1(b), the fifth surface 25 is oriented toward the first through hole 13 in the first direction Z.
[0016] The fifth surface 25 includes the end face 42 (the lower end face in FIG. 1(b)) of the conductive film 40 in the first direction Z. Also, the fifth surface 25 includes the surface 35 of the insulating layer 34 that is located closer to the second side surface portion 13b of the first through hole 13 than the end face 42 of the conductive film 40 in the directions (the second direction X and the third direction Y) orthogonal to the first direction Z. The end face 42 of the conductive film 40 is located closer to the central axis C of the second through hole 31 than the surface 35 of the insulating layer 34.
[0017] For example, charged particle beams pass through the second through hole 31 and the first through hole 13. The side surface 31a of the second through hole 31 is covered with the conductive film 40, and the insulating layer 34 of the wiring portion 20 is not exposed on the side surface of the second through hole 31. Thereby, charging of the side surface of the insulating layer 34 can be suppressed, and abnormal deflection of the charged particle beam can be suppressed. As a result, the reliability of the wiring member 1 can be enhanced.
[0018] Also, on the fifth surface 25 of the wiring portion 20, the end face 42 of the conductive film 40 is exposed on the side closer to the central axis C of the second through hole 31, that is, the portion closer to the passage path of the charged particle beam. Thereby, abnormal deflection of the charged particle beam can be suppressed.
[0019] Next, referring to FIGS. 2(a) and (b), a manufacturing method of the wiring member 1 according to the embodiment will be described.
[0020] As shown in FIG. 2(a), after forming the wiring portion 20 on the first surface 11 of the substrate 10, a second through hole 31 is formed in the wiring portion 20. The second through hole 31 can be formed, for example, by the RIE (Reactive Ion Etching) method. The second through hole 31 reaches the first surface 11 of the substrate 10, and a part 11a of the first surface 11 of the substrate 10 is exposed at the bottom surface of the second through hole 31.
[0021] After forming the second through-hole 31, as shown in FIG. 2(b), a conductive film 40 is formed on the side surface 31a and the bottom surface (a part 11a of the first surface 11 of the substrate 10) of the second through-hole 31. For example, by a sputtering method, a continuous conductive film 40 can be formed on the fourth surface 24 of the wiring portion 20, the side surface 31a, and the bottom surface of the second through-hole 31. A part or all of the conductive film 40 on the fourth surface 24 of the wiring portion 20 may be removed.
[0022] After forming the conductive film 40, a first through-hole 13 continuous with the second through-hole 31 is formed in the substrate 10 from the second surface 12 side of the substrate 10. For example, by the RIE method, the substrate 10 is etched in the first direction Z from the second surface 12 side of the substrate 10. For example, when the substrate 10 is a silicon substrate, a fluorine-based gas (such as SF6 gas) can be used as the etching gas. When the substrate 10 is etched from the second surface 12 to the first surface 11, the conductive film 40 formed on the bottom surface of the second through-hole 31 is exposed. Thereafter, the etching gas is switched, or the same etching gas is used, to etch and remove the conductive film 40 formed on the bottom surface of the second through-hole 31. For example, when the conductive film 40 is a titanium film, a chlorine-based gas (such as a mixed gas of BCl3 and Cl2) can be used as the etching gas. Also, a fluorine-based gas (such as SF6 gas) can be used to etch both the silicon substrate and the titanium film. In order to etch the conductive film 40 formed on the bottom surface of the second through-hole 31, the first through-hole 13 is also formed to extend into a part of the wiring portion 20 in the first direction Z.
[0023] When forming the first through-hole 13 to a part of the wiring portion 20, a part of the insulating layer 34 is removed, and a portion where the insulating layer 34 is exposed appears on the side surface of the first through-hole 13. That is, as shown in FIG. 1(b), the side surface of the first through-hole 13 has a first side surface portion 13a located on the substrate 10 and a second side surface portion 13b located on a part of the wiring portion 20. The etching gas when removing a part of the insulating layer 34 may be the same as or different from the etching gas when removing the substrate 10.
[0024] Furthermore, in order to ensure that the desired width necessary for the passage of the charged particle beam is secured even if a misalignment occurs between the first through-hole 13 and the second through-hole 31, the width of the first through-hole 13 is made larger than the width of the second through-hole 31 in the direction perpendicular to the first direction Z. Therefore, as shown in Figure 1(b), a step is formed between the side surface 41 of the conductive film 40 formed on the side surface 31a of the second through-hole 31 and the side surface of the first through-hole 13. This step forms a fifth surface 25 on the wiring section 20 that is continuous with the side surface of the first through-hole 13 and the side surface 41 of the conductive film 40.
[0025] As a result of the process of forming the first through-hole 13 described above, the end face 42 of the conductive film 40 is exposed on the fifth surface 25 located at the boundary between the first through-hole 13 and the second through-hole 31.
[0026] Here, Figures 4(a) and (b) show a method for manufacturing a wiring member according to a comparative example.
[0027] In the comparative example, after forming a conductive film 40 on the side surface 31a and bottom surface of the second through hole 31, and before forming the first through hole 13, the conductive film 40 is etched back by the RIE method as shown in Figure 4(a) to remove the conductive film 40 formed on the bottom surface of the second through hole 31. In Figure 4(a), the surface of the conductive film 40 before etch-back is shown by a dashed line.
[0028] Next, as shown in Figure 4(b), the substrate 10 is etched in the first direction Z from the second surface 12 side of the substrate 10 to form the first through hole 13. At this time, the wiring portion 20 is not etched.
[0029] According to the comparative example method, at the boundary between the first through-hole 13 and the second through-hole 31, the surface 35 of the insulating layer 34 is exposed on the lower surface of the wiring portion 20 that is exposed from the substrate 10 and formed in an annular shape, even on the side closer to the central axis C of the second through-hole 31. Therefore, there is concern that the charging of the surface 35 of the insulating layer 34 may cause abnormal deflection of the charged particle beam.
[0030] According to this embodiment, as shown in Figure 1(b), on the fifth surface 25 of the wiring portion 20 that is exposed from the substrate 10 and formed in an annular shape at the boundary between the first through hole 13 and the second through hole 31, the end face 42 of the conductive film 40 is located on the side closer to the central axis C of the second through hole 31, and the surface 35 of the insulating layer 34 is not exposed. This makes it possible to suppress abnormal deflection of the charged particle beam.
[0031] Furthermore, in the comparative example, when the conductive film 40 is etched back from the fourth surface 24 side of the wiring section 20 shown in Figure 4(a), side etching progresses on the conductive film 40 formed on the side surface 31a of the second through hole 31, raising concerns about a reduction in the thickness of the conductive film 40 remaining on the side surface 31a of the second through hole 31. This could potentially prevent the desired antistatic function from being achieved.
[0032] According to this embodiment, since the conductive film 40 formed on the bottom surface of the second through-hole 31 is removed by etching from the substrate 10 side, etching of the conductive film 40 formed on the side surface 31a of the second through-hole 31 can be suppressed.
[0033] Figure 3(a) is a schematic plan view of a wiring member according to a modified embodiment, and Figure 3(b) is a cross-sectional view of BB in Figure 3(a).
[0034] In this modified example, a portion 25a of the fifth surface 25 of the wiring portion 20 consists only of the end face 42 of the conductive film 40, and does not include the surface 35 of the insulating layer 34 on the second side surface 13b side. Of the fifth surface 25 which is formed in an annular shape in plan view, a portion 25a of the fifth surface 25 is located, for example, to the right of the central axis C of the second through hole 31 in the second direction X. Since the surface 35 of the insulating layer 34 is not exposed in a portion 25a of the fifth surface 25, the effect of suppressing abnormal deflection of the charged particle beam can be enhanced.
[0035] For example, this modified structure can be obtained when the position of the first through-hole 13 in the second direction X relative to the second through-hole 31 is shifted to the left compared to the examples shown in Figures 1(a) and (b).
[0036] While several embodiments of the present invention have been described, these embodiments are presented as examples only and are not intended to limit the scope of the invention. These novel embodiments can be carried out in a variety of other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the claims of the invention and its equivalents. [Explanation of symbols]
[0037] 1…Wiring member, 10…Substrate, 11…First surface, 12…Second surface, 13…First through hole, 13a…First side surface, 13b…Second side surface, 20…Wiring section, 23…Third surface, 24…Fourth surface, 25…Fifth surface, 31…Second through hole, 32…Wiring layer, 34…Insulating layer, 35…Surface of insulating layer, 40…Conductive film, 42…End face
Claims
1. A substrate having a first surface, a second surface located opposite the first surface in a first direction, and a first through hole extending in the first direction, A wiring portion provided on the first surface of the substrate, having an insulating layer, a wiring layer provided within the insulating layer, a second through-hole extending in the first direction and continuous with the first through-hole, and a conductive film provided on the side surface of the second through-hole, Equipped with, In a direction perpendicular to the first direction, the width of the first through-hole is greater than the width of the second through-hole. The first through-hole extends to a part of the wiring portion in the first direction, and the side surface of the first through-hole has a first side surface located on the substrate and a second side surface located on the part of the wiring portion. The wiring portion is a wiring member having a third surface facing the first surface of the substrate, a fourth surface located on the opposite side of the third surface in the first direction, and a fifth surface that is continuous with the second side surface of the first through hole and the side surface of the conductive film, and includes the end face of the conductive film in the first direction.
2. The wiring member according to claim 1, wherein the fifth surface of the wiring portion includes the end face of the conductive film and the surface of the insulating layer located closer to the second side of the first through hole than the end face of the conductive film in a direction perpendicular to the first direction.
3. The wiring member according to claim 2, wherein a part of the fifth surface of the wiring portion consists only of the end face of the conductive film, and the second side portion does not include the surface of the insulating layer.
4. The wiring member according to any one of claims 1 to 3, wherein the conductive film is a titanium film, a titanium nitride film, or a laminated film of a titanium film and a titanium nitride film.
5. A step of forming a wiring portion on the first surface of a substrate having a first surface and a second surface located opposite to the first surface in a first direction, the wiring portion having an insulating layer and a wiring layer provided within the insulating layer, The process of forming a second through-hole in the wiring portion that reaches the first surface of the substrate, A step of forming a conductive film on the side and bottom surfaces of the second through hole, A step of forming a first through-hole in the substrate that is continuous with the second through-hole from the second surface side of the substrate, and removing the conductive film formed on the bottom surface of the second through-hole, Equipped with, A method for manufacturing a wiring member, wherein, in the step of forming the first through-hole, the width of the first through-hole is greater than the width of the second through-hole in a direction perpendicular to the first direction, the first through-hole extends into a part of the wiring portion in the first direction, and the end face in the first direction of the conductive film formed on the side surface of the second through-hole is exposed at the boundary between the first through-hole and the second through-hole.