Indication device

Abstract

The display device includes a plurality of light emitting elements arranged on a substrate in a first arrangement direction and a second arrangement direction intersecting the first arrangement direction, and first and second sub-pixel regions each overlapping at least a portion of the plurality of light emitting elements, spaced apart from each other along the first direction, and extending in a second direction intersecting the first direction, the second direction and the first arrangement direction being non-parallel to each other.

Description

[Technical Field]

[0001] This disclosure relates, in general, to display devices. [Background technology]

[0002] Recently, with the growing interest in information displays, research and development related to display devices are being continuously conducted. [Overview of the project] [Problems that the invention aims to solve]

[0003] One or more aspects of this disclosure relate to a display device and a method for manufacturing the same, in which the proportion of light-emitting elements that can operate normally is increased and the arrangement efficiency of light-emitting elements is improved.

[0004] One or more aspects of this disclosure relate to a display device with improved process predictability and a method for manufacturing the same.

[0005] One or more aspects of this disclosure are not limited to those described above, and other aspects of the art not described will be clearly understood by a person of ordinary skill from the following description. [Means for solving the problem]

[0006] According to one or more embodiments of the present disclosure, the present invention includes a plurality of light-emitting elements arranged on a substrate and arranged in the form of a matrix along a first array direction and a second array direction intersecting the first array direction, and a first subpixel region and a second subpixel region superimposed on (overlapping with) at least a portion of the plurality of light-emitting elements, spaced apart from each other along the first direction and extending, respectively, in a second direction intersecting the first direction, wherein the second direction and the second array direction may be nonparallel to each other.

[0007] According to one or more embodiments, the substrate may further include a light-shielding layer disposed on the substrate and defining (partitioning) the first subpixel region and the second subpixel region.

[0008] In one or more embodiments, a first color of light may be emitted from the first subpixel region, and a second color of light may be emitted from the second subpixel region.

[0009] According to one or more embodiments, the second direction and the second arrangement direction can form an acute angle between them.

[0010] According to one or more embodiments, the included angle can be between 5 and 40 degrees.

[0011] According to one or more embodiments, the first subpixel region includes a side parallel to the first direction and having a first length, and the plurality of light-emitting elements include a first light-emitting element and a second light-emitting element that are adjacent to each other in the second array direction and separated by a first array distance, wherein the first length and the first array distance may satisfy the following formula.

[0012] JPEG0007864738000001.jpg2142

[0013] (x1 is the first length, and y is the first array distance.)

[0014] According to one or more embodiments, the first array distance may be the shortest distance between the first light-emitting element and the second light-emitting element.

[0015] According to one or more embodiments, the present invention further includes a first subpixel region, a second subpixel region, and a third subpixel region spaced apart along the first direction, wherein the first subpixel region is located on one side of the second subpixel region, the third subpixel region is located on the other side of the second subpixel region, one end of the first subpixel region and the other end of the third subpixel region are spaced apart from each other by a second length, and the plurality of light-emitting elements include a first light-emitting element and a second light-emitting element, the second length and the first array distance being adjacent to each other in the second array direction and spaced apart from each other by a first array distance, the second length and the first array distance being satisfied by the following formula.

[0016] JPEG0007864738000002.jpg2142

[0017] (x2 is the second length, and y is the first array distance.)

[0018] According to one or more embodiments, the first sub-pixel region and the second sub-pixel region are separated from each other by a separation distance (for example, a predetermined separation distance), and each of the plurality of light-emitting elements has a bottom surface length (for example, a predetermined bottom surface length ), and one or more of the separation distances and the bottom surface length can satisfy the following formula.

[0019] JPEG0007864738000003.jpg1842

[0020] (z is the separation distance, and w is the bottom surface length length.)

[0021] According to one or more embodiments, the bottom surfaces of the plurality of light-emitting elements have a circular shape, and the bottom surface length can be the diameter of the circle.

[0022] According to one or more embodiments, the bottom surfaces of the plurality of light-emitting elements have a rectangular shape, and the bottom surface length can be the length of the diagonal of the rectangle.

[0023] According to one or more embodiments, a light control unit disposed on the plurality of light-emitting elements and configured to change the wavelength of light emitted from the light-emitting elements, the first sub-pixel region, the second sub-pixel region, and a third sub-pixel region that are separated from each other along the first direction and extend in the second direction are further included, and the light control unit can include a first wavelength conversion pattern that overlaps the first sub-pixel region, a second wavelength conversion pattern that overlaps the second sub-pixel region, and a light transmission pattern that overlaps the third sub-pixel region.

[0024] According to one or more embodiments, at least a first portion of the plurality of light-emitting elements overlaps with the first sub-pixel region, a second portion of the plurality of light-emitting elements overlaps with the second sub-pixel region, a third portion of the plurality of light-emitting elements overlaps with the third sub-pixel region, and the plurality of light-emitting elements can emit light of the same color from one another.

[0025] According to one or more embodiments, the number of the plurality of light-emitting elements per unit area on the substrate can be uniform.

[0026] According to one or more embodiments of the present disclosure, the steps include: providing a laminated substrate; forming a first semiconductor layer, an active layer, and a second semiconductor layer on the laminated substrate; etching the first semiconductor layer, the active layer, and the second semiconductor layer to provide a plurality of light-emitting elements; separating the laminated substrate from the plurality of light-emitting elements and bonding the plurality of light-emitting elements onto a donor film; arranging the plurality of light-emitting elements arranged on the donor film onto a substrate; and arranging a light-shielding layer on the plurality of light-emitting elements that defines a first sub-pixel region and a second sub-pixel region, wherein the step of providing the plurality of light-emitting elements includes patterning the plurality of light-emitting elements in the form of a matrix along a first arrangement direction and a second arrangement direction intersecting the first arrangement direction, and the step of arranging the light-shielding layer includes forming the light-shielding layer such that the first sub-pixel region and the second sub-pixel region are separated from each other along the first direction and extend in a second direction intersecting the first direction, wherein the second direction and the second arrangement direction may be non-parallel to each other.

[0027] According to one or more embodiments, the step of deforming the donor film so as to increase the separation distance between the plurality of light-emitting elements may be further included.

[0028] According to one or more embodiments, before the step of deforming the donor film is performed, the plurality of light-emitting elements are separated from each other by an undeformed distance, and in the step of deforming the donor film, the separation distance between the plurality of light-emitting elements increases so that the plurality of adjacent light-emitting elements in the first array direction are separated by a first array distance, and the plurality of adjacent light-emitting elements in the second array direction are separated by a second array distance.

[0029] According to one or more embodiments, the expandable range may be a multiple of the length, within the limits that the donor film remains non-destructive when expanded in one direction.

[0030] The expandable range of the donor film can satisfy the following formula.

[0031] JPEG0007864738000004.jpg1842

[0032] (Here, A is the expandable range of the donor film, y is the first array distance, and v is the undeformed interval.)

[0033] According to one or more embodiments, the second direction and the first arrangement direction can form an acute angle between them.

[0034] According to one or more embodiments, the steps further include forming a first wavelength conversion pattern, a second wavelength conversion pattern, and a light transmission pattern arranged in the same layer as the light-shielding layer, wherein the step of arranging the light-shielding layer includes forming the light-shielding layer such that the first subpixel region, the second subpixel region, and a third subpixel region spaced apart along the first direction and extending in the second direction are defined (partitioned), wherein the plurality of light-emitting elements emit third-color light, the first wavelength conversion pattern converts the third-color light to first-color light, the second wavelength conversion pattern converts the third-color light to second-color light, and the light transmission pattern transmits the third-color light, and the plurality of light-emitting elements may include a first light-emitting element superimposed on the first subpixel region and the first wavelength conversion pattern, a second light-emitting element superimposed on the second subpixel region and the second wavelength conversion pattern, and a third light-emitting element superimposed on the third subpixel region and the light transmission pattern.

[0035] One or more aspects and methods of this disclosure are not limited to the solutions described herein, and aspects and methods not described herein will be clearly understood by a person with ordinary skill in the art to which this disclosure pertains from this specification and the accompanying drawings. [Effects of the Invention]

[0036] One or more embodiments of this disclosure relate to a display device and a method for manufacturing the same, in which the arrangement efficiency of light-emitting elements is improved by increasing the proportion of light-emitting elements that can operate normally.

[0037] One or more embodiments of this disclosure relate to a display device with improved process predictability and a method for manufacturing the same.

[0038] The effects and aspects of this disclosure are not limited to those described herein, and any effects and aspects not described herein should be clearly understood by a person skilled in the art to which this disclosure pertains, based on this specification and the accompanying drawings. [Brief explanation of the drawing]

[0039] [Figure 1] This is a schematic perspective view showing a display device according to one or more embodiments. [Figure 2] This is a schematic plan view showing a display device according to one or more embodiments. [Figure 3] This is a cross-sectional view showing a display device according to one or more embodiments. [Figure 4] This figure shows a pixel circuit included in a pixel according to one or more embodiments. [Figure 5] This is a schematic cross-sectional view showing pixels according to one or more embodiments. [Figure 6] Figure 2 shows an enlarged view of EA1 (1). [Figure 7] This is an enlarged view (2) of EA1 in Figure 2. [Figure 8] Figure 2 shows an enlarged view of EA1 (3). [Figure 9] This is a plan view (1) schematically showing the positional relationship of light-emitting elements included in one or more embodiments of a display device. [Figure 10] This is a plan view (2) schematically showing the positional relationship of light-emitting elements included in one or more embodiments of a display device. [Figure 11] This is a cross-sectional view (1) of each process step (or operation) of a method for manufacturing a display device according to one or more embodiments. [Figure 12] (2) is a cross-sectional view of each process step (or operation) of a method for manufacturing a display device according to one or more embodiments. [Figure 13] (3) is a cross-sectional view of each process step (or operation) of a method for manufacturing a display device according to one or more embodiments. [Figure 14] This is a cross-sectional view (4) of each process step (or operation) of a method for manufacturing a display device according to one or more embodiments. [Figure 15] (5) is a cross-sectional view of each process step (or operation) of a method for manufacturing a display device according to one or more embodiments. [Figure 16] This is a plan view (1) of each process step (or operation) of a method for manufacturing a display device according to one or more embodiments. [Figure 17] This is a cross-sectional view (6) of each process step (or operation) of a method for manufacturing a display device according to one or more embodiments. [Figure 18] (2) is a plan view of each process step (or operation) of a method for manufacturing a display device according to one or more embodiments. [Figure 19] Figure (1) shows an example in which a display device according to one or more embodiments is applied. [Figure 20] Figure (2) shows an example in which a display device according to one or more embodiments is applied. [Figure 21] Figure (3) shows an example in which a display device according to one or more embodiments is applied. [Figure 22] Figure (4) shows an example in which a display device according to one or more embodiments is applied. [Modes for carrying out the invention]

[0040] The examples described herein are intended to clearly illustrate the concept of the disclosure to a person having ordinary skill in the art to which the disclosure pertains. Therefore, the disclosure is not limited to the examples described herein, and the scope of the disclosure should be construed as including modifications or variations that do not deviate from the concept of the disclosure.

[0041] As used herein, expressions such as “at least one of,” “one of,” and “selected from” do not modify the overall subject or individual subject for each individual component of a list when they precede a list of components.

[0042] As used herein, “and / or” includes any combination of one or more of the items listed in relation to each other.

[0043] Furthermore, when describing embodiments of this disclosure, the use of "may" refers to "one or more embodiments of this disclosure."

[0044] When a component is described as being "located on" or "connected to" another component, it can be understood that this includes not only cases where the component is directly located on or connected to another component, but also cases where another component exists between them.

[0045] In drawings, the relative sizes of components, sides, and areas may be exaggerated and / or simplified for clarity. Spatially relative terms such as “below,” “below / down,” “above,” “above / up,” and “above” can be used for explanatory convenience to describe a single component. It will be understood that spatially relative terms are intended to include other directions of the device in use or operation, in addition to the directions shown in the drawings. For example, if the device is inverted in the drawing, a component described as being located below / down to another component or feature may be located above / up to the other component or feature. Thus, the term “below / down” can include both up and down directions. The device may be specified in other directions (rotated 90 degrees or in a different direction), and the spatially relative descriptors used herein should be interpreted accordingly.

[0046] As used herein, the terms “substantially,” “about,” and similar terms are intended to be used as terms of approximation, not degree, and are intended to describe the eigenvariance of a measured or calculated value that can be recognized by an ordinary person of the art.

[0047] Terms such as "first," "second," etc., can be used to describe various components, but these terms should not be used to restrict the interpretation of the components. These terms are used solely to distinguish one component from another. For example, without departing the scope of this disclosure, the first component may be referred to as the second component, and similarly, the second component may be referred to as the first component.

[0048] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as those generally understood by a person of ordinary skill in the art to which this disclosure pertains. Terms as defined in commonly used dictionaries should be interpreted in the context of the relevant statements as having the same meaning as defined in dictionaries, and should not be idealized or interpreted in a formal sense unless expressly defined herein.

[0049] This disclosure relates to a display device. Hereinafter, one or more embodiments of a display device will be described with reference to Figures 1 to 22.

[0050] Figure 1 is a schematic perspective view showing one or more embodiments of a display device. Figure 2 is a schematic plan view showing one or more embodiments of a display device.

[0051] Referring to Figures 1 and 2, one or more embodiments of the display device DD may be configured to emit light.

[0052] According to one or more embodiments, the display device DD may include a substrate SUB and pixels PXL disposed on the substrate SUB. According to one or more embodiments, the display device DD may further include drive circuits (e.g., a scanning drive unit and a data drive unit), wiring, and pads for driving the pixels PXL.

[0053] For example, a pixel PXL may include a first subpixel SPXL1, a second subpixel SPXL2, and a third subpixel SPXL3.

[0054] The display device DD may include a display area DA and a non-display area NDA. The non-display area NDA may refer to an area other than the display area DA. The non-display area NDA may be located around (or enclose) at least a portion of the display area DA.

[0055] The substrate SUB can constitute the base component of the display device DD. The substrate SUB may be a rigid substrate, a flexible substrate, or a film, but is not limited to any specific example.

[0056] The display area DA may refer to the area where pixels PXL are located. The non-display area NDA may refer to the area where pixels PXL are not located. The non-display area NDA may contain drive circuits, wiring, and pads connected to the pixels PXL of the display area DA.

[0057] For example, a pixel PXL is a stripe or pentile. TM )(PENTILE TM The arrays may be arranged according to the array structure (e.g., RGBG array structure) of Samsung Display Inc., a registered patent of the Republic of Korea, but this disclosure is not limited thereto, and any appropriately modified embodiment may be applied.

[0058] According to one or more embodiments, the display area DA may have a pixel PXL containing multiple subpixels (see "SPXL" in Figure 4). For example, the display area DA may have a first subpixel SPXL1 emitting a first color of light, a second subpixel SPXL2 emitting a second color of light, and a third subpixel SPXL3 emitting a third color of light, and at least one of the first to third subpixels SPXL1, SPXL2, and SPXL3 may constitute (or form) a single pixel unit or pixel PXL capable of emitting light of various appropriate colors.

[0059] For example, the first to third subpixels SPXL1, SPXL2, and SPXL3 may each be subpixels that emit light of one color (e.g., a predetermined color). For example, the first subpixel SPXL1 may be a red pixel that emits red light (for example, the first color), the second subpixel SPXL2 may be a green pixel that emits green light (for example, the second color), and the third subpixel SPXL3 may be a blue pixel that emits blue light (for example, the third color). However, the color, type, and / or number of subpixels SPXL that constitute (or form) each of the aforementioned pixel units are not limited to specific examples.

[0060] For the sake of explanation, the following description will be based on one or more embodiments in which the pixel PXL includes the first to third sub-pixels SPXL1, SPXL2, and SPXL3. The sub-pixel SPXL as defined herein may be any one of the first to third sub-pixels SPXL1, SPXL2, and SPXL3.

[0061] Figure 3 is a cross-sectional view showing a display device according to one or more embodiments.

[0062] The display device DD may include a substrate SUB, a pixel circuit section PCL, a display element section DPL, and an optical control section LCP. For example, the substrate SUB, the pixel circuit section PCL, the display element section DPL, and the optical control section LCP may be stacked (e.g., sequentially stacked) along the display direction of the display device DD (for example, a third direction DR3). Here, the display direction may refer to the thickness direction of the substrate SUB.

[0063] The substrate SUB can constitute the base surface of the display device DD. Individual components of the display device DD can be arranged on the substrate SUB.

[0064] The pixel circuit section PCL may be located on the substrate SUB. The pixel circuit section PCL may include a pixel circuit (see "PXC" in Figure 4) configured to drive the pixel PXL.

[0065] The display element unit DPL may be arranged on the pixel circuit unit PCL. The display element unit DPL can emit light based on electrical signals provided by the pixel circuit unit PCL. The display element unit DPL may include light-emitting elements (see "LD" in Figure 4) that can emit light. The light emitted from the display element unit DPL may pass through the light control unit LCP and be provided to the outside (for example, the external area of ​​the display device DD).

[0066] The optical control unit LCP may be placed on the display element unit DPL. The optical control unit LCP may be placed on the light-emitting element LD. The optical control unit LCP can change the wavelength of light provided from the display element unit DPL (or light-emitting element LD). For example, as shown in Figure 5, the optical control unit LCP may include a color conversion unit CCL configured to change the wavelength of light and a color filter unit CFL that transmits light having a specific wavelength.

[0067] Figure 4 shows a pixel circuit included in one or more embodiments.

[0068] Figure 4 shows the electrical coupling relationships of components included in a subpixel SPXL applied to a display device DD (e.g., an active-type display device) according to one or more embodiments. Although Figure 4 shows the types of components included in a subpixel SPXL, the types of components included in a subpixel SPXL are not limited to these.

[0069] Referring to Figure 4, the sub-pixel SPXL can include a light-emitting element LD and a pixel circuit PXC.

[0070] The light-emitting element LD may be connected between the first power supply line VDD and the second power supply line VSS. One end of the light-emitting element LD (for example, a P-type semiconductor) may be connected to the first power supply line VDD via the first electrode ELT1 and the pixel circuit PXC, and the other end of the light-emitting element LD (for example, an N-type semiconductor) may be connected to the second power supply line VSS via the second electrode ELT2.

[0071] According to one or more embodiments, when a drive current is supplied to a light-emitting element LD via a pixel circuit PXC, the light-emitting element LD can emit light with a brightness corresponding to the drive current.

[0072] According to one or more embodiments, light-emitting diodes (LDs) can be connected to one another via various suitable coupling structures between a first power line VDD and a second power line VSS. For example, the light-emitting diodes (LDs) may be connected only in parallel or only in series. Alternatively, they may be connected in a mixed series / parallel configuration. For instance, a first plurality of light-emitting diodes may be electrically connected to one another in series, while a second plurality of light-emitting diodes may be electrically connected to one another in parallel.

[0073] The first power line VDD and the second power line VSS can have different potentials from each other so that the light-emitting element LD can diverge. The first power line VDD and the second power line VSS can have a potential difference large enough to allow light to diverge during the light emission period of the subpixel SPXL. For example, the first power line VDD may be set to a higher potential than the second power line VSS.

[0074] The pixel circuit PXC can connect the first power line VDD and the light-emitting element LD. The pixel circuit PXC may include a first transistor T1, a second transistor T2, a third transistor T3, and a storage capacitor Cst.

[0075] In one or more embodiments, one electrode of the first transistor T1 may be connected to a first power line VDD, and the other electrode may be connected to one electrode (for example, the anode electrode) of the light-emitting element LD. The gate electrode of the first transistor T1 may be connected to a first node N1. The first transistor T1 can control the current flowing through the light-emitting element LD in response to the voltage applied via the first node N1.

[0076] In one or more embodiments, one electrode of the second transistor T2 may be connected to a data line DL, and the other electrode may be connected to a first node N1. The gate electrode of the second transistor T2 may be connected to a scan line SL. The second transistor T2 is turned on when a scan signal is supplied from the scan line SL, and at this time it can transmit the data signal provided from the data line DL to the first node N1.

[0077] In one or more embodiments, one electrode of the third transistor T3 may be connected to the sensing line SENL, and the other electrode may be connected to the second node N2. The gate electrode of the third transistor T3 may be connected to the sensing signal line SEL. When the third transistor T3 is turned on in response to a sensing signal provided from the sensing signal line SEL, a reference voltage may be provided to the second node N2 via the sensing line SENL.

[0078] According to one or more embodiments, the reference voltage can serve to set or initialize the voltage of the electrodes of the first transistor T1 connected to the light-emitting element LD (for example, the source electrode of the first transistor T1) to a certain value. For example, the reference voltage may be set to be less than or equal to the voltage of the second power supply line VSS.

[0079] According to one or more embodiments, a third transistor T3 can transmit a sensing current to the sensing line SENL when it is turned on in response to a sensing signal provided from the sensing signal line SEL.

[0080] According to the embodiment, the sensing current can be used to calculate the change in mobility and threshold voltage of the first transistor T1.

[0081] A storage capacitor Cst may be connected between a first node N1 (or the gate electrode of a first transistor T1) and a second node N2 (or another electrode of the first transistor T1). The storage capacitor Cst can store information about the difference between the voltage at the first node N1 and the voltage at the second node N2.

[0082] On the other hand, the structure of the pixel circuit PXC is not limited to the structure shown in Figure 4, and various appropriate structural forms can be realized. In Figure 4, the first to third transistors T1 to T3 are shown based on N-type transistors, but this is not limited to this, and in some embodiments, the first to third transistors T1 to T3 may be composed of P-type transistors.

[0083] Below, with reference to Figure 5, the structure of the sub-pixel SPXL that constitutes the pixel PXL will be described in more detail. Any potentially redundant information will be simplified or omitted.

[0084] Figure 5 is a schematic cross-sectional view showing pixels according to one or more embodiments.

[0085] Figure 5 shows the first subpixel SPXL1, the second subpixel SPXL2, and the third subpixel SPXL3.

[0086] Figure 5 describes the configuration included in the pixel circuit PXC, as described with reference to Figure 4, with the first transistor T1 as the reference. As an example, one or more embodiments are shown in Figure 5, in which the first transistor T1 is provided in each of the first sub-pixel SPXL1, the second sub-pixel SPXL2, and the third sub-pixel SPXL3.

[0087] The pixel circuit section PCL may be arranged on the substrate SUB. The pixel circuit section PCL may include a buffer film BFL, a first transistor T1, a gate insulating film GI, a first interlayer insulating film ILD1, a second interlayer insulating film ILD2, a bridge pattern BRP, a contact portion CNT, and a protective film PSV.

[0088] For example, the individual configuration of the pixel circuit section PCL can be partitioned into the first to third sub-pixels SPXL1, SPXL2, and SPXL3, respectively.

[0089] The buffer film BFL can be placed on the substrate SUB. The buffer film BFL can prevent or substantially prevent the diffusion of impurities from the outside. The buffer film BFL is made of silicon nitride (SiN X ), silicon oxide (SiO X ), silicon oxynitride (SiO X N Y ), and aluminum oxide (AlO X It may include at least one of the metal oxides such as )

[0090] According to one or more embodiments, the first transistor T1 may be a thin-film transistor. According to one or more embodiments, the first transistor T1 may be a driving transistor.

[0091] The first transistor T1 can be connected (e.g., electrically connected) to a light-emitting element LD. For example, the first transistor T1 of the first subpixel SPXL1 can be connected (e.g., electrically connected) to a light-emitting element LD located within the first subpixel region SPXA1. The first transistor T1 of the second subpixel SPXL2 can be connected (e.g., electrically connected) to a light-emitting element LD located within the second subpixel region SPXA2. The first transistor T1 of the third subpixel SPXL3 can be connected (e.g., electrically connected) to a light-emitting element LD located within the third subpixel region SPXA3.

[0092] According to one or more embodiments, the first transistor T1 may include an active layer ACT, a first transistor electrode TE1, a second transistor electrode TE2, and a gate electrode GE.

[0093] The active layer ACT may refer to a semiconductor layer. The active layer ACT may be disposed on the buffer film BFL. The active layer ACT may include at least one of polysilicon, amorphous silicon, and an oxide semiconductor.

[0094] According to one or more embodiments, the active layer ACT may include a first contact region in contact with the first transistor electrode TE1 and a second contact region in contact with the second transistor electrode TE2. The first contact region and the second contact region may be impurity-doped semiconductor patterns. The region between the first contact region and the second contact region may be a channel region. The channel region may be an intrinsic semiconductor pattern not doped with impurities.

[0095] The gate electrode GE may be disposed on the gate insulating film GI. The position of the gate electrode GE may correspond to the position of the channel region of the active layer ACT. For example, the gate electrode GE may be disposed on the channel region of the active layer ACT with the gate insulating film GI interposed therebetween.

[0096] The gate insulating film GI may be disposed on the active layer ACT. The gate insulating film GI may include an inorganic material. According to one example, the gate insulating film GI may include at least one of silicon nitride (SiN x ), silicon oxide (SiO x ), silicon oxynitride (SiO x N y ), and aluminum oxide (AlO x ). According to one or more embodiments, the gate insulating film GI may include an organic material.

[0097] The first interlayer insulating film ILD1 may be located on the gate electrode GE. Similar to the gate insulating film GI, the first interlayer insulating film ILD1 may include silicon nitride (SiN x ), silicon oxide (SiO x ), silicon oxynitride (SiOx N y ), and aluminum oxide (AlO x ) may include at least one of the following.

[0098] The first transistor electrode TE1 and the second transistor electrode TE2 can be located on the first interlayer insulating film ILD1. The first transistor electrode TE1 can penetrate the gate insulating film GI and the first interlayer insulating film ILD1 to contact the first contact region of the active layer ACT, and the second transistor electrode TE2 can penetrate the gate insulating film GI and the first interlayer insulating film ILD1 to contact the second contact region of the active layer ACT. For example, the first transistor electrode TE1 may be the source electrode and the second transistor electrode TE2 may be the drain electrode, but is not limited thereto.

[0099] The second interlayer insulating film ILD2 can be located on the first transistor electrode TE1 and the second transistor electrode TE2. The second interlayer insulating film ILD2, like the first interlayer insulating film ILD1 and the gate insulating film GI, can include an inorganic material. An example of the inorganic material for the second interlayer insulating film ILD2 is that it can include at least one of the materials of the first interlayer insulating film ILD1 and the gate insulating film GI, one example being silicon nitride (SiN x ), silicon oxide (SiO x ), silicon oxynitride (SiO x N y ), and aluminum oxide (AlO x This may include at least one of the above. However, this disclosure is not limited to the examples described above. In one or more embodiments, the second interlayer insulating film ILD2 may include an organic material.

[0100] The bridge pattern BRP may be placed on the second interlayer insulating film ILD2. The bridge pattern BRP may be connected to the first transistor electrode TE1 via a contact hole that penetrates the second interlayer insulating film ILD2.

[0101] The protective film PSV may be located on the second interlayer insulating film ILD2. The protective film PSV may cover the bridge pattern BRP. The protective film PSV may, but is not limited to, include an organic insulating film, an inorganic insulating film, or the organic insulating film disposed on the inorganic insulating film. According to one or more embodiments, the protective film PSV may have contact portions CNTs formed thereon that are connected to a region of the bridge pattern BRP.

[0102] The display element section DPL may be arranged on the pixel circuit section PCL. The display element section DPL may include a first electrode ELT1, a connecting electrode COL, an insulating layer INS, a light-emitting element LD, and a second electrode ELT2. For example, the individual configuration of the display element section DPL may be partitioned into first to third sub-pixels SPXL1, SPXL2, and SPXL3, respectively.

[0103] The first electrode ELT1 may be placed on the protective film PSV. The first electrode ELT1 may be placed below the light-emitting element LD. The first electrode ELT1 may be connected to the bridge pattern BRP via the contact portion CNT.

[0104] According to one or more embodiments, the first electrode ELT1 may be coupled (or electrically coupled) to the light-emitting element LD. In one example, the first electrode ELT1 can provide an electrical signal from the first transistor T1 to the light-emitting element LD. The first electrode ELT1 can apply an anode signal to the light-emitting element LD.

[0105] According to one or more embodiments, the first electrode ELT1 may include a conductive material. For example, the first electrode ELT1 may include metals such as silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), titanium (Ti), and alloys thereof. However, it is not limited to the examples given above.

[0106] The connecting electrode COL may be placed on the first electrode ELT1. For example, one side of the connecting electrode COL may be connected to the light-emitting element LD, and the other side of the connecting electrode COL may be connected to the first electrode ELT1.

[0107] The connecting electrode COL contains a conductive material and can connect (or electrically connect) the first electrode ELT1 and the light-emitting element LD. As an example, the connecting electrode COL may be connected (or electrically connected) to the second semiconductor layer 13 of the light-emitting element LD. According to one or more embodiments, the connecting electrode COL may contain a conductive material having reflective properties in order to reflect light emitted from the light-emitting element LD, thereby improving the luminescence efficiency of the pixel PXL.

[0108] According to one or more embodiments, the connecting electrode COL may be a bonding metal that is bonded (or can be bonded) to the light-emitting element LD. The connecting electrode COL is bonded to, or can be bonded to, the light-emitting element LD.

[0109] The light-emitting diode (LD) may be included in each of the first to third subpixels SPXL1, SPXL2, and SPXL3. The light-emitting diode (LD) is configured to emit light. The light-emitting diode (LD) may include a first semiconductor layer 11, a second semiconductor layer 13, and an active layer 12 interposed between the first semiconductor layer 11 and the second semiconductor layer 13. For example, if the extension direction of the light-emitting diode (LD) is the length direction, the light-emitting diode (LD) may include a first semiconductor layer 11, an active layer 12, and a second semiconductor layer 13 that are stacked along the length direction (for example, stacked sequentially).

[0110] According to one or more embodiments, the light-emitting element LD may be provided in a columnar shape extending in one direction. The light-emitting element LD may have a first end EP1 and a second end EP2. One of the first semiconductor layer 11 and the second semiconductor layer 13 may be adjacent to the first end EP1 of the light-emitting element LD. The remaining one of the first semiconductor layer 11 and the second semiconductor layer 13 may be adjacent to the second end EP2 of the light-emitting element LD.

[0111] According to one or more embodiments, the light-emitting element LD may be a light-emitting element manufactured in a columnar shape by an etching method or the like. In this specification, a columnar shape includes rod-like shapes or bar-like shapes that are long in the longitudinal direction (i.e., have an aspect ratio greater than 1), such as cylinders or polygonal prisms, and the shape of its cross-section is not particularly limited. For example, the length of the light-emitting element LD may be greater than its diameter or the width of its cross-section.

[0112] According to one or more embodiments, the light-emitting diode (LD) can be as small as a nanometer to micrometer scale. For example, the light-emitting diode (LD) may have a diameter (or width) and / or length in the nanometer to micrometer range. However, the size of the light-emitting diode (LD) is not limited thereto.

[0113] The first semiconductor layer 11 may be a semiconductor layer of a first conductivity type. For example, the first semiconductor layer 11 may include an N-type semiconductor layer. As an example, the first semiconductor layer 11 may include one semiconductor material from among InAlGaN, GaN, AlGaN, InGaN, AlN, and InN, and may include an N-type semiconductor layer doped with a first conductivity type dopant such as Si, Ge, or Sn. However, the materials constituting the first semiconductor layer 11 are not limited to these.

[0114] The active layer 12 is placed on the first semiconductor layer 11 and can be formed in a single-quantum well structure or a multi-quantum well structure. For example, when the active layer 12 is formed in a multi-quantum well structure, the active layer 12 can be periodically and repeatedly stacked as a single unit consisting of a barrier layer, a strain reinforcing layer, and a well layer. Since the strain reinforcing layer has an even smaller lattice constant than the barrier layer, it can further strengthen the structure against strain applied to the well layer, for example, compressive strain. However, the structure of the active layer 12 is not limited to the embodiments described above.

[0115] According to one or more embodiments, the active layer 12 can emit light having wavelengths of 400 nm to 900 nm. For example, the active layer 12 may include materials such as AlGaN and InAlGaN, but is not limited to the above examples.

[0116] The second semiconductor layer 13 is disposed on the active layer 12 and may include a semiconductor layer of a different type from the first semiconductor layer 11. For example, the second semiconductor layer 13 may include a P-type semiconductor layer. As an example, the second semiconductor layer 13 may include a P-type semiconductor layer doped with a second conductivity type dopant such as Mg, and may contain at least one semiconductor material from among InAlGaN, GaN, AlGaN, InGaN, AlN, and InN. However, the materials constituting the second semiconductor layer 13 are not limited to these, and various other suitable materials can constitute the second semiconductor layer 13.

[0117] When a voltage exceeding the threshold voltage is applied across the light-emitting element LD, electron-hole pairs combine in the active layer 12, causing the light-emitting element LD to emit light. By controlling the light emission of the light-emitting element LD using this principle, the light-emitting element LD can be used as a light source for various light-emitting devices, including pixels in display devices.

[0118] According to one or more embodiments, the light-emitting LD may further include an insulating film INF provided on its surface. The insulating film INF may be formed as a single film or a double film, but is not limited to this, and may consist of multiple films. As an example, the insulating film INF may include a first insulating film containing a first material and a second insulating film containing a second material different from the first material.

[0119] According to one or more embodiments, the insulating film INF can expose both ends of a light-emitting element LD having different polarities from each other. For example, the insulating film INF can expose one end each of the first and second semiconductor layers 11 and 13 located at the first and second ends EP1 and EP2 of the light-emitting element LD.

[0120] According to one or more embodiments, the insulating film INF may include an inorganic material. For example, the insulating film INF may be silicon oxide (SiO x ), silicon nitride (SiN x ), silicon oxynitride (SiO x N y ), aluminum oxide (AlO x ) and titanium oxide (TiO x It may consist of a single layer or multiple layers, comprising at least one of the insulating materials () and being formed in a single or multiple layer configuration.

[0121] According to one or more embodiments, the insulating film INF can ensure the electrical stability of the light-emitting element LD. Furthermore, even when multiple light-emitting elements LD are arranged in close proximity (or adjacent to each other), it is possible to prevent undesirable short circuits from occurring between the light-emitting elements LD (for example, between adjacent light-emitting elements LD).

[0122] According to one or more embodiments, the light-emitting diode (LD) may further include additional configurations in addition to the configuration described above. For example, the light-emitting diode (LD) may further include one or more phosphor layers, active layers, semiconductor layers, and / or electrode layers disposed on one end side of the first semiconductor layer 11, the active layer 12, and / or the second semiconductor layer 13. As an example, contact electrode layers may be further disposed on the first and second ends EP1 and EP2 of the light-emitting diode (LD), respectively.

[0123] The insulating layer INS may be placed on the protective film PSV. The insulating layer INS may cover at least a portion of the first electrode ELT1 and / or the connecting electrode COL. The insulating layer INS may be provided between the connecting electrode COL and the light-emitting element LD that bonds (or is bonded). The insulating layer INS may be placed between light-emitting elements LDs and cover the outer surface of the light-emitting elements LDs. For example, the insulating layer INS may include, but is not limited to, any of the materials listed exemplary with reference to the insulating film INF.

[0124] The second electrode ELT2 may be placed on the insulating layer INS. The second electrode ELT2 may be placed on top of the light-emitting element LD.

[0125] According to one or more embodiments, the second electrode ELT2 may be connected (e.g., electrically connected) to the light-emitting element LD. The second electrode ELT2 may be connected (e.g., electrically connected) to the first semiconductor layer 11. In one example, the second electrode ELT2 can apply a cathode signal to the light-emitting element LD. The second electrode ELT2 can provide an electrical signal supplied from the second power line VSS to the light-emitting element LD.

[0126] According to one or more embodiments, the second electrode ELT2 may contain a conductive material. For example, the second electrode ELT2 may contain a transparent conductive material. The second electrode ELT2 may contain any one of the following: conductive oxides such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium gallium zinc oxide (IGZO), indium tin zinc oxide (ITZO), or conductive polymers such as PEDOT (poly(3,4-ethylenedioxythiophene)). However, it is not limited to the examples described above.

[0127] The light control unit (LCP) may be positioned on the display element unit (DPL). The light control unit (LCP) can change the wavelength of the light supplied from the display element unit (DPL). The light control unit (LCP) may include a color conversion unit (CCL) and a color filter unit (CFL).

[0128] According to the embodiment, the light-emitting element LDs arranged in the first subpixel SPXL1, the second subpixel SPXL2, and the third subpixel SPXL3 can emit light of the same color from each other. For example, the first subpixel SPXL1, the second subpixel SPXL2, and the third subpixel SPXL3 may include light-emitting element LDs that emit a third color (blue light as an example). By arranging an optical control unit LCP on such the first subpixel SPXL1, the second subpixel SPXL2, and the third subpixel SPXL3, a full-color image can be displayed. However, the embodiment is not necessarily limited to this, and the first subpixel SPXL1, the second subpixel SPXL2, and the third subpixel SPXL3 may include light-emitting element LDs that emit light of different colors from each other.

[0129] The color conversion unit CCL may include a first passivation layer PSS1, a wavelength conversion pattern WCP, a light transmission pattern LTP, a light shielding layer LBL, and a second passivation layer PSS2. The wavelength conversion pattern WCP may include a first wavelength conversion pattern WCP1 and a second wavelength conversion pattern WCP2.

[0130] The first passivation layer PSS1 may be positioned between the display element portion DPL and the light-shielding layer LBL or wavelength conversion pattern WCP, and / or between the display element portion DPL and the wavelength conversion pattern WCP. The first passivation layer PSS1 may seal (or cover) the wavelength conversion pattern WCP. The first passivation layer PSS1 may include, but is not limited to, any of the materials listed exemplarily with reference to the insulating film INF.

[0131] According to one or more embodiments, an adhesive layer may be interposed between the first passivation layer PSS1 and the second electrode ELT2. The adhesive layer can bond the first passivation layer PSS1 and the second electrode ELT2. The adhesive layer may contain a suitable adhesive substance and is not limited to any particular example.

[0132] The first wavelength conversion pattern WCP1 may be positioned to overlap with the emission region EMA (for example, the first subpixel region SPXA1) of the first subpixel SPXL1. For example, the first wavelength conversion pattern WCP1 may be positioned within the space defined by the light-shielding layer LBL and, when viewed on a plane, overlap with the first subpixel region SPXA1.

[0133] According to one or more embodiments, the light-shielding layer LBL includes a plurality of walls, and the first wavelength conversion pattern WCP1 may be provided in the space between the plurality of walls, which are located in the region corresponding to the first subpixel SPXL1.

[0134] The second wavelength conversion pattern WCP2 may be positioned to overlap with the emission region EMA (for example, the second subpixel region SPXA2) of the second subpixel SPXL2. For example, the second wavelength conversion pattern WCP2 may be positioned within the space defined by the light-shielding layer LBL and, when viewed on a plane, overlap with the second subpixel region SPXA2.

[0135] According to one or more embodiments, the light-shielding layer LBL includes a plurality of walls, and the second wavelength conversion pattern WCP2 may be provided in the space between the plurality of walls, which are arranged in a region corresponding to the second subpixel SPXL2.

[0136] The light transmission pattern LTP can be positioned to overlap with the emission region EMA of the third subpixel SPXL3 (for example, the third subpixel region SPXA3). For example, the light transmission pattern LTP can be positioned within the space defined by the light-shielding layer LBL and, when viewed on a plane, can overlap with the third subpixel region SPXA3.

[0137] According to one or more embodiments, the light-shielding layer LBL includes a plurality of walls, and the light-transmitting pattern LTP may be provided in the space between the plurality of walls, which are arranged in the region corresponding to the third subpixel SPXL3.

[0138] According to one or more embodiments, the first wavelength conversion pattern WCP1 may include a first color conversion particle that converts third-color light emitted from a light-emitting element LD into first-color light. For example, if the light-emitting element LD is a blue light-emitting element that emits blue light, and the first subpixel SPXL1 is a red pixel, the first wavelength conversion pattern WCP1 may include a first quantum dot that converts the blue light emitted from the blue light-emitting element into red light.

[0139] For example, the first wavelength conversion pattern WCP1 may include a plurality of first quantum dots dispersed within a single matrix material (e.g., a predetermined matrix material), such as a base resin. The first quantum dots can absorb blue light and emit red light by shifting their wavelength according to energy transitions. On the other hand, if the first subpixel SPXL1 is a pixel of a different color, the first wavelength conversion pattern WCP1 may include first quantum dots corresponding to the color of the first subpixel SPXL1.

[0140] According to one or more embodiments, the second wavelength conversion pattern WCP2 may include a second color conversion particle that converts the third color of light emitted from the light-emitting element LD into the second color of light. For example, if the light-emitting element LD is a blue light-emitting element that emits blue light, and the second subpixel SPXL2 is a green pixel, the second wavelength conversion pattern WCP2 may include a second quantum dot that converts the blue light emitted from the blue light-emitting element into green light.

[0141] For example, the second wavelength conversion pattern WCP2 may include multiple second quantum dots dispersed within a single matrix material (e.g., a predetermined matrix material), such as a base resin. The second quantum dots can absorb blue light, shift their wavelength according to energy transitions, and emit green light. On the other hand, if the second subpixel SPXL2 is a pixel of a different color, the second wavelength conversion pattern WCP2 may include second quantum dots corresponding to the color of the second subpixel SPXL2.

[0142] On the other hand, the first and second quantum dots can have spherical, pyramidal, multi-arm, or cubic forms such as nanoparticles, nanotubes, nanowires, nanofibers, or nanoplate-like particles, but are not necessarily limited to these forms, and the forms of the first and second quantum dots can be changed in various ways in an appropriate manner.

[0143] In one or more embodiments, the absorption coefficients of the first and second quantum dots can be increased by incidenting them with blue light having a relatively short wavelength in the visible light region. This increases the efficiency of the light emitted from the first subpixel SPXL1 and the second subpixel SPXL2, while also ensuring excellent color reproduction. Furthermore, the manufacturing efficiency of the display device can be improved by configuring the pixel units of the first to third subpixels SPXL1, SPXL2, and SPXL3 using light-emitting diodes (LDs) of the same color (for example, blue light-emitting diodes).

[0144] According to one or more embodiments, the light transmission pattern LTP may be provided to efficiently utilize the third color of light emitted from the light-emitting element LD. For example, if the light-emitting element LD is a blue light-emitting element that emits blue light, and the third subpixel SPXL3 is a blue pixel, the light transmission pattern LTP may include at least one type of light-scattering particle to efficiently utilize the light emitted from the light-emitting element LD.

[0145] For example, a light-transmitting pattern LTP may include multiple light-scattering particles dispersed within a single matrix material (e.g., a predetermined matrix material), such as a base resin. As an example, a light-transmitting pattern LTP may include light-scattering particles such as silica, but the constituent materials of the light-scattering particles are not limited to this.

[0146] On the other hand, the light scattering particles should not be placed only in the third subpixel region SPXA3 where the third subpixel SPXL3 is formed. For example, the light scattering particles may also be selectively included within the first and / or second wavelength conversion patterns WCP1 and WCP2.

[0147] The light-shielding layer LBL can be placed on the display element portion DPL. The light-shielding layer LBL can be placed on the substrate SUB. The light-shielding layer LBL can be placed between the first passivation layer PSS1 and the second passivation layer PSS2. The light-shielding layer LBL can be placed at the boundary of the subpixel SPXL so as to surround the first wavelength conversion pattern WCP1, the second wavelength conversion pattern WCP2, and the light transmission pattern LTP.

[0148] According to one or more embodiments, the light-shielding layer LBL can define the light-emitting region EMA and the non-light-emitting region NEA of the subpixel SPXL. The light-shielding layer LBL can define the first to third subpixel regions SPXA1, SPXA2, and SPXA3.

[0149] For example, the light-shielding layer LBL does not have to overlap with the light-emitting region EMA when viewed on a plane. The light-shielding layer LBL may overlap with the non-light-emitting region NEA when viewed on a plane. Regions where the light-shielding layer LBL is not present can be defined as the light-emitting region EMAs of the first to third subpixels SPXL1, SPXL2, and SPXL3. The light-emitting region EMA of the first subpixel SPXL1 is the first subpixel region SPXA1, the light-emitting region EMA of the second subpixel SPXL2 is the second subpixel region SPXA2, and the light-emitting region EMA of the third subpixel SPXL3 is the third subpixel region SPXA3.

[0150] According to one or more embodiments, the light-shielding layer LBL may be formed from an organic material containing at least one of graphite, carbon black, black pigment, or black dye, or from a metallic material containing chromium (Cr), but is not limited to the above, as long as it is a material that blocks and absorbs light transmission.

[0151] The second passivation layer PSS2 may be positioned between the color filter section CFL and the light shielding layer LBL, and / or between the color filter section CFL and the wavelength conversion pattern WCP. The second passivation layer PSS2 can seal (or cover) the first wavelength conversion pattern WCP1, the second wavelength conversion pattern WCP2, and the light transmission pattern LTP. The second passivation layer PSS2 may include, but is not limited to, any of the materials exemplified with reference to the insulating film INF.

[0152] According to one or more embodiments, the color filter section CFL may be arranged on the color conversion section CCL. The color filter section CFL may include a color filter CF and a planarization layer PLA. Here, the color filter CF may include a first color filter CF1, a second color filter CF2, and a third color filter CF3.

[0153] According to one or more embodiments, the color filter CF may be placed on the second passivation layer PSS2. When viewed in a plane, the color filter CF may be superimposed on the emission regions EMA of the first to third subpixels SPXL1, SPXL2, and SPXL3.

[0154] For example, the first color filter CF1 may be placed in the first subpixel region SPXA1, the second color filter CF2 in the second subpixel region SPXA2, and the third color filter CF3 in the third subpixel region SPXA3.

[0155] According to one or more embodiments, the first color filter CF1 can transmit light of the first color and block light of the second color and / or the third color. For example, the first color filter CF1 may contain a colorant related to the first color.

[0156] According to one or more embodiments, the second color filter CF2 can transmit light of the second color but block light of the first and third colors. For example, the second color filter CF2 may contain a colorant related to the second color.

[0157] According to one or more embodiments, the third-color filter CF3 can transmit the third color of light but block the first and second colors of light. For example, the third-color filter CF3 may contain a colorant related to the third color.

[0158] According to one or more embodiments, the planarizing layer PLA can be placed on the color filter CF. The planarizing layer PLA can cover the color filter CF. The planarizing layer PLA can cancel out any steps caused by the color filter CF. That is, the planarizing layer PLA can cover the steps of the color filter CF and have a planarized upper surface or a substantially planarized upper surface.

[0159] For example, the planarization layer PLA may include an organic insulating material. However, the disclosure is not limited thereto, and the planarization layer PLA may include inorganic materials as listed exemplarily with reference to the insulating film INF.

[0160] The structures of the first to third subpixels SPXL1, SPXL2, and SPXL3 are not limited to those described above with reference to Figure 5, and various suitable structures can be appropriately or preferredly selected to provide a display device DD according to one or more embodiments. As an example, according to one or more embodiments, the display device DD may further include a low refractive index layer to improve light efficiency.

[0161] The following describes the positional relationship between the light-emitting element LD and the sub-pixel SPXL in a display device DD according to one or more embodiments, with reference to Figures 6 to 10. Content that may overlap with what has been described above will be simplified or omitted.

[0162] Figures 6 to 8 are enlarged views of EA1 in Figure 2. Here, Figure 6 focuses on the color conversion section CCL that defines the region of the subpixel SPXL within EA1. Figures 7 and 8 focus on the arrangement of the light-emitting diodes (LDs) included in the subpixel SPXL within EA1.

[0163] Referring to Figure 6, the positions of the first to third subpixels SPXL1, SPXL2, SPXL3 (and / or the first to third subpixel regions SPXA1, SPXA2, SPXA3) can be defined by the light-shielding layer LBL.

[0164] For example, the region where the light-shielding layer LBL is not placed may be an emission region (EMA) where light diverged from the first to third subpixels SPXL1, SPXL2, and SPXL3 is provided to the outside. The region where the light-shielding layer LBL is placed may be a non-emission region (NEA) where light diverged from the first to third subpixels SPXL1, SPXL2, and SPXL3 is not provided to the outside.

[0165] According to one or more embodiments, the light-shielding layer LBL may include a first aperture OP1, a second aperture OP2, and a third aperture OP3. The first aperture OP1, the second aperture OP2, and the third aperture OP3 may be regions where the light-shielding layer LBL is not provided. For example, the position of the first aperture OP1 may correspond to a first sub-pixel region SPXA1, the position of the second aperture OP2 may correspond to a second sub-pixel region SPXA2, and the position of the third aperture OP3 may correspond to a third sub-pixel region SPXA3.

[0166] At least a portion of the light-shielding layer LBL can be provided in a manner that surrounds (or encloses) the region to be provided as the first subpixel SPXL1 (for example, the first subpixel region SPXA1), thereby forming the first aperture OP1. Here, the first subpixel region SPXA1 can be defined by the first aperture OP1. The first subpixel region SPXA1 is the region in which the first subpixel SPXL1 is located, and may refer to the light-emitting region EMA of the first subpixel SPXL1.

[0167] In one or more embodiments, a wavelength conversion pattern WCP containing a first wavelength conversion material may be placed at a position corresponding to the first aperture OP1. As a result, the light emitted from the light-emitting element LD contained in the first subpixel SPXL1 may be provided as light having a first color and output to the outside.

[0168] At least a portion of the light-shielding layer LBL is provided in a manner that surrounds (for example, encloses) the region to be provided as the second subpixel SPXL2 (for example, the second subpixel region SPXA2), thereby forming the second aperture OP2. Here, the second subpixel region SPXA2 may be defined by the second aperture OP2. The second subpixel region SPXA2 is the region in which the second subpixel SPXL2 is located, and may refer to the light-emitting region EMA of the second subpixel SPXL2.

[0169] In one or more embodiments, a wavelength conversion pattern WCP containing a second wavelength conversion material may be positioned at a location corresponding to the second aperture OP2. As a result, the light emitted from the light-emitting element LD contained in the second subpixel SPXL2 may be provided as light having a second color and output to the outside.

[0170] At least a portion of the light-shielding layer LBL is provided in a manner that surrounds (for example, encloses) the region to be provided as the third subpixel SPXL3 (for example, the third subpixel region SPXA3), thereby forming the third aperture OP3. Here, the third subpixel region SPXA3 may be defined by the third aperture OP3. The third subpixel region SPXA3 is the region in which the third subpixel SPXL3 is located, and may refer to the light-emitting region EMA of the third subpixel SPXL3.

[0171] According to one or more embodiments, a separate wavelength conversion material does not need to be placed at the position corresponding to the third aperture OP3. As a result, the light emitted from the light-emitting element LD included in the third subpixel SPXL3 may be provided as light having a third color and output to the outside.

[0172] According to one or more embodiments, the first to third subpixels SPXL1, SPXL2, and SPXL3 may be separated from each other in the first direction DR1. The first to third subpixel regions SPXA1, SPXA2, and SPXA3 may be separated from each other in the first direction DR1.

[0173] For example, the first subpixel region SPXA1 may be located on one side of the second subpixel region SPXA2, and the third subpixel region SPXA3 may be located on the other side of the second subpixel region SPXA2.

[0174] According to one or more embodiments, the first to third subpixels SPXL1, SPXL2, and SPXL3 may extend in the second direction DR2. The first to third subpixel regions SPXA1, SPXA2, and SPXA3 may be separated from each other in the second direction DR2.

[0175] Here, the first direction DR1 and the second direction DR2 can intersect each other. The first direction DR1 and the second direction DR2 can be non-parallel to each other. For example, the first direction DR1 and the second direction DR2 can be orthogonal to each other.

[0176] Figures 7 and 8 show the array structure of the light-emitting diodes (LDs). Figure 7 shows the array structure of the light-emitting diodes according to the first embodiment. Figure 8 shows the array structure of the light-emitting diodes according to the second embodiment.

[0177] Referring to Figures 7 and 8, the light-emitting LDs can be arranged in a matrix.

[0178] The light-emitting element LDs may be arranged in a defined matrix configuration in the row direction extending in the first array direction ADR1 and the column direction extending in the second array direction ADR2, or along these row and column directions. However, in one or more embodiments, the defined matrix configuration may be defined as being in the column direction extending in the first array direction ADR1 and the row direction extending in the second array direction ADR2, or along these column and row directions.

[0179] Here, the first array direction ADR1 and the second array direction ADR2 may intersect each other. The first array direction ADR1 and the second array direction ADR2 may be nonparallel to each other. According to one or more embodiments, the first array direction ADR1 and the second array direction ADR2 may be orthogonal to each other.

[0180] According to one or more embodiments, light-emitting elements (LDs) may be arranged in the matrix configuration at positions corresponding to each row and column. The i-th light-emitting element LDij may refer to a light-emitting element LD arranged in the i-th row and j-th column of the matrix configuration. For example, one light-emitting element LD may be placed in the first column of the first row, and another light-emitting element LD may be placed in the tenth column of the tenth row.

[0181] Referring to Figure 7, the light-emitting element LD can have a rectangular (or square) shape when viewed in a plane. For example, if the light-emitting element LD has a rectangular parallelepiped shape, it will be provided in a rectangular (or square) shape when viewed in a plane.

[0182] Alternatively, referring to Figure 8, the light-emitting element LD can have a circular shape when viewed in plan. For example, if the light-emitting element LD is provided in the form of a column with a circular base, it will be provided in a circular shape when viewed in plan.

[0183] However, the shape of the light-emitting element LD is not limited to the examples described above, and according to one or more embodiments, a light-emitting element LD having a known suitable bottom shape can be provided.

[0184] According to one or more embodiments, the number of light-emitting elements (LDs) per unit area on the substrate SUB can be uniform. The number of light-emitting elements (LDs) per unit area arranged in the first to third sub-pixel regions SPXA1, SPXA2, and SPXA3 can be approximately uniform.

[0185] For example, the light-emitting element LD may include a first plurality of light-emitting elements arranged in a first subpixel region SPXA1, a second plurality of light-emitting elements arranged in a second subpixel region SPXA2, and a third plurality of light-emitting elements arranged in a third subpixel region SPXA3. Here, the number of each of the first plurality of light-emitting elements, the second plurality of light-emitting elements, and the third plurality of light-emitting elements may be substantially the same as each other, or less than or equal to a difference of one (for example, a predetermined difference).

[0186] According to one or more embodiments, the light-emitting element LDs may be arranged so as to be generally aligned along a first arrangement direction ADR1. The light-emitting element LDs may also be arranged so as to be generally aligned along a second arrangement direction ADR2. That is, regardless of the shape of the light-emitting element LDs, the arrangement configuration of the matrix can be clearly defined according to the arrangement position of the light-emitting element LDs.

[0187] According to one or more embodiments, at least some of the light-emitting diodes (LDs) arranged in a matrix configuration may be located in the first to third sub-pixel regions SPXA1, SPXA2, and SPXA3. For example, the light-emitting diodes (LDs) may be located within the first to third sub-pixel regions SPXA1, SPXA2, and SPXA3, or intermittently not located within the first to third sub-pixel regions SPXA1, SPXA2, and SPXA3.

[0188] However, according to one or more embodiments of this disclosure, the number of light-emitting elements (LDs) that are not located within the first to third sub-pixel regions SPXA1, SPXA2, and SPXA3 can be minimized or reduced. This will be discussed further below with reference to Figures 9 and 10.

[0189] Figures 9 and 10 are schematic plan views showing the positional relationship of light-emitting elements included in one or more embodiments of a display device. Figure 10 is an enlarged view of EA2 in Figure 9.

[0190] Figures 9 and 10 primarily show the first subpixel SPXL1 and the second subpixel SPXL2 for ease of explanation. The technical characteristics of the first subpixel SPXL1 and the second subpixel SPXL2 shown in Figures 9 and 10 can be defined and applied to multiple subpixel SPXLs.

[0191] Furthermore, for the sake of explanation, Figure 9 will be described using the first, second, and third light-emitting elements LD1, LD2, and LD3, which are adjacent to each other, as the reference point among the multiple light-emitting elements LDs. The light-emitting elements LD can include the first, second, and third light-emitting elements LD1, LD2, and LD3.

[0192] According to one or more embodiments, the first light-emitting element LD1 and the second light-emitting element LD2 may be arranged within the first sub-pixel region SPXA1. As a result, the light emitted from the first light-emitting element LD1 and the second light-emitting element LD2 may be included in the light emitted from the first sub-pixel SPXL1.

[0193] According to one or more embodiments, the third light-emitting element LD3 may be located within the second subpixel region SPXA2. This allows the light emitted from the third light-emitting element LD3 to be included in the light emitted from the second subpixel SPXL2.

[0194] According to one or more embodiments, the first light-emitting element LD1 can be adjacent to the second light-emitting element LD2 along the first array direction ADR1. The first light-emitting element LD1 and the second light-emitting element LD2 can be separated from each other by a first array distance 120, where the first array distance 120 may refer to the shortest distance between the first light-emitting element LD1 and the second light-emitting element LD2.

[0195] According to one or more embodiments, the first light-emitting element LD1 may be adjacent to the third light-emitting element LD3 along the second array direction ADR2. The first light-emitting element LD1 and the third light-emitting element LD3 may be separated from each other by a second array distance 140, where the second array distance 140 may refer to the shortest distance between the first light-emitting element LD1 and the third light-emitting element LD3.

[0196] In one example, the first array distance 120 and the second array distance 140 may be the same. Thus, the light-emitting element LDs described above with reference to Figures 7 and 8 may be provided such that the distances between adjacent light-emitting element LDs are the same. However, in one or more embodiments, the first array distance 120 and the second array distance 140 may be different.

[0197] The directions in which the first subpixel SPXL1 and the second subpixel SPXL2 extend may intersect with the first array direction ADR1. The directions in which the first subpixel SPXL1 and the second subpixel SPXL2 extend may be non-parallel to each other.

[0198] For example, as mentioned above, subpixels SPXL can be spaced apart from each other in the first direction DR1 and extend in the second direction DR2, thereby allowing the first array direction ADR1 and the second direction DR2 to intersect. The first array direction ADR1 and the second direction DR2 can be non-parallel to each other.

[0199] Specifically, referring to Figure 9, an extension line 210 parallel to the direction in which the first subpixel SPXL1 extends and the first array direction ADR1 can form an angle (θ) between them. Here, the extension line 210 may be parallel to the second direction DR2.

[0200] For example, the second direction DR2 can form an acute angle (θ) with the first array direction ADR1.

[0201] According to one or more embodiments, the included angle (θ) may not be 0 degrees, 45 degrees, or 90 degrees. For example, the included angle (θ) may be between 5 degrees and 40 degrees. Alternatively, the included angle (θ) may be between 10 degrees and 35 degrees.

[0202] According to this disclosure, the number of light-emitting LDs that are not arranged within the first to third sub-pixel regions SPXA1, SPXA2, and SPXA3 can be reduced by forming them so as to avoid the combined angle (θ) values ​​of 0, 45, and 90 degrees, thereby improving the arrangement efficiency of the light-emitting LDs.

[0203] According to one or more embodiments, the separation distance between light-emitting elements LDs (for example, the first array distance 120 and the second array distance 140) can satisfy a numerical relationship (for example, a predetermined numerical relationship) with the first length 220. Here, the first length 220 may refer to the length of one side of a sub-pixel SPXL parallel to the first direction DR1. For example, referring to Figure 9, the first length 220 may refer to the length of one side of the first sub-pixel SPXL1 parallel to the first direction DR1.

[0204] According to one or more embodiments, the separation distance between light-emitting elements LD and the first length 220 can satisfy the following formula 1.

[0205] <Formula 1> JPEG0007864738000005.jpg1842

[0206] Here, x1 refers to the first length of 220, and y refers to the distance between the light-emitting elements (LDs). Thus, y can refer to the first array distance of 120 and / or the second array distance of 140.

[0207] However, in one or more embodiments, the separation distance y between light-emitting elements LD and the length x2 of one side of the pixel PXL along the first direction DR1 can satisfy the following equation 2.

[0208] <Formula 2> JPEG0007864738000006.jpg2142

[0209] Here, x2 may refer to the second length 230 of the pixel PXL. The second length 230 may refer to the length of the pixel PXL in the first direction DR1. For example, if the pixel PXL is composed of first to third sub-pixels SPXL1, SPXL2, and SPXL3 arranged sequentially in the first direction DR1, the second length 230 may refer to the separation distance between one end 232 of the first sub-pixel SPXL1 (or first sub-pixel region SPXA1) and the other end 234 of the third sub-pixel SPXL3 (or third sub-pixel region SPXA3), with respect to the first direction DR1. In one or more embodiments, one end 232 of the first sub-pixel SPXL1 (or first sub-pixel region SPXA1) and the other end 234 of the third sub-pixel SPXL3 (or third sub-pixel region SPXA3) may face each other at the outer edge of the pixel PXL.

[0210] n is the number of subpixels SPXL arranged along the first direction DR1. For example, if pixel PXL is composed of the first to third subpixels SPXL1, SPXL2, and SPXL3, then n may be 3.

[0211] In this example, the length of one side of a pixel PXL composed of subpixels SPXL, and the number of subpixels SPXL, can be used as a basis to define the length of one side of a single subpixel SPXL, thereby deriving the relationship between the distance between light-emitting elements (LDs) and the length of the pixel PXL. In this case, the ease of designing the array of light-emitting elements (LDs) during the manufacturing process can be increased.

[0212] On the other hand, referring to Figure 10, the separation distance 240 between the first subpixel SPXL1 and the second subpixel SPXL2 and the length characteristics of the light-emitting element LD can satisfy a numerical relationship (for example, a predetermined numerical relationship).

[0213] As an example, the separation distance 240 between the first subpixel SPXL1 and the second subpixel SPXL2 along the first direction DR1 can be determined by the length characteristics of the single light-emitting element LD.

[0214] According to one or more embodiments, the light-emitting element LD may have a base length (e.g., a predetermined base length) 100 when viewed in a plane. Here, the base length 100 of the light-emitting element LD may be a length determined according to the shape of the base of the light-emitting element LD.

[0215] For example, if the base of the light-emitting diode (LD) is square (or rectangular), the base length 100 may refer to the length of the diagonal of the square (or rectangle). Alternatively, if the base of the light-emitting diode (LD) is circular, the base length 100 may refer to the diameter of the circle. Alternatively, if the base of the light-emitting diode (LD) is elliptical, the base length 100 may refer to the semi-major axis of the ellipse.

[0216] According to one or more embodiments, the separation distance between the bottom surface length 100 of the light-emitting element LD and the sub-pixel SPXL can satisfy the following equation 3.

[0217] <Formula 3> JPEG0007864738000007.jpg1541

[0218] Here, z can be the distance between subpixels SPXL. For example, it can be a separation distance of 240 along the first direction DR1 between the first subpixel SPXL1 (or the first subpixel region SPXA1) and the second subpixel SPXL2 (or the second subpixel region SPXA2). Also, w can be the bottom surface length of the light-emitting element LD, which is 100.

[0219] In this example, the spacing between subpixel SPXLs can be determined according to the characteristic length of the light-emitting diode (LD), thereby preventing or substantially preventing short-circuit defects.

[0220] According to this embodiment, the relationship between the spacing between light-emitting elements LD and the length of the sub-pixel SPXL is defined by a single mathematical formula (e.g., a predetermined formula), thereby increasing the convenience of process design, preventing or substantially preventing short-circuit defects, and providing a display device DD with improved electrical reliability.

[0221] The following describes a method for manufacturing a display device DD according to one or more embodiments, with reference to Figures 11 to 18. Content that may overlap with what has been described above will be simplified or avoided.

[0222] Figures 11 to 15 and 17 are cross-sectional views of each process step (or act) of the manufacturing method for the display device DD. Figures 16 and 18 are plan views of each process step (or act) of the manufacturing method for the display device DD.

[0223] Referring to Figure 11, a laminated substrate 1 can be prepared (or provided), and a first semiconductor layer 11, an active layer 12, and a second semiconductor layer 13 can be formed on the laminated substrate 1.

[0224] According to one or more embodiments, the laminated substrate 1 may be a base plate for stacking target materials. The laminated substrate 1 may be a wafer for epitaxial growth of a single material (e.g., a predetermined material). For example, the laminated substrate 1 may be, but is not limited to, a sapphire substrate, a GaAs substrate, a Ga substrate, or an InP substrate. For example, a particular material may be selected as the material for the laminated substrate 1 if it satisfies the selectivity ratio for manufacturing a light-emitting diode (LD) and epitaxial growth of the predetermined material can occur smoothly.

[0225] In this step (or operation), the first semiconductor layer 11, the active layer 12, and the second semiconductor layer 13 may be formed by any one of the following methods: metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), vapor phase epitaxy (VPE), and liquid phase epitaxy (LPE).

[0226] Referring to Figure 12, it is possible to provide a light-emitting diode (LD) that is individually separated from each other by removing at least a portion of the first semiconductor layer 11, the active layer 12, and the second semiconductor layer 13.

[0227] In this step (or operation), etching can be performed on the first semiconductor layer 11, the active layer 12, and the second semiconductor layer 13. To form individually separated light-emitting diodes (LDs), a mask can be placed on a structure in which the first semiconductor layer 11, the active layer 12, and the second semiconductor layer 13 are stacked (for example, sequentially stacked), and the etching process can be carried out to pattern the spacing at the nanoscale or microscale. The etching process can be carried out in the direction from the second semiconductor layer 13 toward the first semiconductor layer 11.

[0228] For example, the etching process may be one of the following: reactive ion etching (RIE), reactive ion beam etching (RIBE), or inductively coupled plasma reactive ion etching (ICP-RIE), but is not limited to any particular example.

[0229] In this step (or operation), the provided light-emitting element LD may be patterned in the form of a matrix defined by the first array direction ADR1 and the second array direction ADR2.

[0230] Referring to Figure 13, the laminated substrate 1 can be separated from the light-emitting element LD, and the light-emitting element LD can be bonded (or placed, connected) onto the donor film 16.

[0231] In this step (or operation), the laminated substrate 1 may be physically separated from the first semiconductor layer 11. For example, the laminated substrate 1 and the first semiconductor layer 11 may be separated by a laser lift-off (LLO) method. However, the disclosure is not limited thereto, and in one or more embodiments, the laminated substrate 1 and the first semiconductor layer 11 may be separated by a chemical lift-off (CLO) method.

[0232] In this step (or operation), layers that are formed in the same process as the first semiconductor layer 11, and that are not separately etched and do not constitute individual light-emitting elements (LDs), may also be removed. Therefore, after this step (or operation) is performed, a plurality of light-emitting element (LD) arrays patterned at intervals (for example, predetermined intervals) may be provided on the donor film 16.

[0233] According to one or more embodiments, the donor film 16 may be configured to position the light-emitting element LD in a specific location (e.g., a predetermined location) before performing subsequent steps (for example, the step of arranging the light-emitting element LD on the substrate SUB and the pixel circuit section PCL). The donor film 16 may be called a donor wafer or donor substrate. The donor film 16 may be an isotropically stretchable film. For example, the donor film 16 may contain a polymer composition (e.g., a PVC (polyvinyl chloride)-based material), but is not limited to any particular example.

[0234] According to one or more embodiments, the light-emitting elements LDs patterned in this step (or operation) may be arranged in the form of a matrix consisting of rows extending along a first array direction ADR1 and columns extending along a second array direction ADR2.

[0235] Referring to Figure 14, the donor film 16 can be deformed. The area of ​​the donor film 16 on a plane (or viewed on a plane) can be increased. The donor film 16 can be expanded in one direction. The donor film 16 can be expanded in the area direction.

[0236] Before this step (or operation) is performed, adjacent light-emitting LDs on the donor film 16 may be separated by an undeformed spacing 112.

[0237] As an example, on the donor film 16, the light-emitting elements LDs may be arranged in a matrix, and adjacent light-emitting elements LDs may be separated from each other by an undeformed interval (or unmodified interval) 112. Here, the undeformed interval 112 may refer to the shortest distance between adjacent light-emitting elements LDs on a plane (or as seen on a plane). As an example, adjacent light-emitting elements LDs in the first arrangement direction ADR1 or the second arrangement direction ADR2 may be separated from each other by an undeformed interval 112.

[0238] In one or more embodiments, in this step (or operation), the donor film 16 may be uniformly expanded radially. In this step (or operation), the length (or area) of the donor film 16 may be determined, and the separation distance between light-emitting elements LDs may increase. In one example, the donor film 16 may be physically extended (or expanded), but any suitable method can be applied and is not limited to any particular example.

[0239] For example, when this step (or operation) is performed, adjacent light-emitting elements LDs in the first array direction ADR1 may be separated by a first array distance of 120, and adjacent light-emitting elements LDs in the second array direction ADR2 may be separated by a second array distance of 140.

[0240] According to one or more embodiments, the physical properties required for the donor film 16 can be determined by a numerical relationship between the undeformed interval 112, the first array distance 120, and / or the second array distance 140.

[0241] As an example, the range of expansion in the longitudinal direction of the donor film 16 can be determined by a numerical relationship between the undeformed interval 112, the first array distance 120, and / or the second array distance 140.

[0242] Here, the expandable range of the donor film 16 may refer to a multiple within the limits that the donor film 16 will not be damaged when expanded on a plane (or viewed on a plane). In other words, expanding the donor film 16 to the expandable range may be non-destructive.

[0243] For example, if the expandable range of the donor film 16 is 2, the length of the donor film 16 can be expanded up to twice its original length in one direction (for example, the first arrangement direction ADR1), and if the length of the donor film 16 is expanded to less than twice its original length, no further damage may occur.

[0244] In one or more embodiments, the undeformed interval (or unmodified interval) 112, the first array distance 120, and / or the second array distance 140, and the expandable range of the donor film 16 can satisfy the following formula 4.

[0245] <Formula 4> JPEG0007864738000008.jpg1541

[0246] Here, y is the separation distance between the light-emitting elements LDs, as described above, and may refer to the first array distance 120 and / or the second array distance 140. A may represent the expandable range of the donor film 16. v is the spacing between the light-emitting elements LDs before the donor film 16 is separately deformed, and may be the undeformed spacing 112.

[0247] This step (or operation) can be performed so that the separation distance between the light-emitting elements LDs satisfies the aforementioned formula 1 (and / or formula 2). That is, the separation distance between the light-emitting elements LDs can be determined by formula 1 (and / or formula 2), and the separation distance between the light-emitting elements LDs can be appropriately adjusted in this step to conform to (or appropriately) formula 1 (and / or formula 2). In this case, suitable physical properties for the donor film 16 can be calculated based on formula 4 in order to adjust the separation distance between the light-emitting elements LDs. As a result, according to one or more embodiments, the predictability of the process can be improved.

[0248] Referring to Figures 15 and 16, the light-emitting element LD can be placed on the substrate SUB and the pixel circuit section PCL using the placement member 17. The light-emitting element LD can be coupled with the connecting electrode COL.

[0249] In this step (or operation), the placement member 17 may be configured to bond an array of light-emitting elements (LDs) mounted on the donor film 16 to one surface, thereby forming or transferring the light-emitting elements (LDs) onto the substrate SUB and the pixel circuit section PCL. The placement member 17 can simultaneously pick up individual light-emitting elements (LDs) and position them on the substrate SUB and the pixel circuit section PCL. For example, the pick-up process of the placement member 17 may be an elastic polymer stamping method, an electromagnetic method, or a method utilizing an adhesive member, but is not limited to any particular example.

[0250] In this step (or operation), the light-emitting element LD and the placement member 17 are coupled such that the first semiconductor layer 11 faces the placement member 17, and the light-emitting element LD may be arranged such that the second semiconductor layer 13 faces the connecting electrode COL.

[0251] On the other hand, in this step (or operation), referring to Figure 16, the light-emitting LDs may be positioned such that the first array direction ADR1 and the second array direction ADR2 are offset from the positions where the first to third subpixel regions SPXA1, SPXA2, and SPXA3 are to be subsequently formed. Specifically, by adjusting the tilt angle of the donor film 16, the relationship between the positions of the first to third subpixel regions SPXA1, SPXA2, and SPXA3 to be subsequently formed and the positions of the first array direction ADR1 and the second array direction ADR2 can be adjusted.

[0252] For example, the first direction DR1 can be defined as the direction in which the first to third sub-pixel regions SPXA1, SPXA2, and SPXA3 are separated from each other, and the second direction DR2 can be defined as the direction that intersects with the first direction DR1 and in which the first to third sub-pixel regions SPXA1, SPXA2, and SPXA3 extend.

[0253] Here, as the process of arranging the light-emitting element LDs on the donor film 16 (see Figure 15) proceeds, the pose of the donor film 16 relative to the substrate SUB and the pixel circuit section PCL can be adjusted. In this case, the pose of the donor film 16 can be adjusted so that the first arrangement direction ADR1 intersects (or is not parallel to) the second direction DR2.

[0254] Referring to Figures 17 and 18, an insulating layer INS can be placed on the connecting electrode COL so that the space between the light-emitting elements LDs is filled. Then, a second electrode ELT connected (for example, electrically connected) to the light-emitting elements LDs can be patterned, and subsequently, the optical control unit LCP can be placed on the display element DPL. For the sake of explanation, Figure 17 shows the first sub-pixel SPXL1 of the aforementioned sub-pixel SPXL as a reference, referring to Figure 5.

[0255] In this step (or operation), a color conversion unit CCL can be placed on the display element unit DPL. At this time, a light-shielding layer LBL can be formed on the display element unit DPL to define (partition) the light-emitting regions EMA of the first to third subpixels SPXL1, SPXL2, SPXL3, for example, the first subpixel region to the third subpixel region SPXA1, SPXA2, SPXA3.

[0256] Specifically, referring to Figure 18, the light-shielding layer LBL can be positioned so that the first to third apertures OP1, OP2, and OP3 are formed. For example, after forming a base light-shielding layer for forming the light-shielding layer LBL, an etching process can be performed at the positions corresponding to the first to third apertures OP1, OP2, and OP3.

[0257] In this step, the separation distance between the first to third apertures OP1, OP2, and OP3 of the light-shielding layer LBL can be adjusted to control the separation distance 240 in the first direction DR1 between the subsequently provided first to third subpixels SPXL1, SPXL2, and SPXL3. For example, as described above, the separation distance 240 between the first to third subpixels SPXL1, SPXL2, and SPXL3 may be provided to satisfy equation 3.

[0258] In this step, the positions where the first to third apertures OP1, OP2, and OP3 of the light-shielding layer LBL are formed are adjusted so that the first array direction ADR1 is provided such that the extension direction of the first to third subpixels SPXL1, SPXL2, and SPXL3 (for example, the second direction DR2) has a bounding angle (θ) within a certain range (e.g., a predetermined range).

[0259] The following describes the application fields of the display device DD according to one or more embodiments, with reference to Figures 19 to 21. Figures 19 to 22 show examples of applications of the display device according to one or more embodiments. For example, the display device DD can be applied to smartphones, laptop computers, tablet PCs, and / or televisions, and can also be applied to various other embodiments.

[0260] Referring to Figure 19, the display device DD according to one or more embodiments can be applied to smart glasses 1100, which include a frame 1104 and a lens portion 1102. The smart glasses 1100 are wearable electronic devices that can be worn on a user's face, and may have a structure in which a part of the frame 1104 can be folded or unfolded. For example, the smart glasses 1100 may be a wearable device for augmented reality (AR).

[0261] The frame 1104 may include a housing 1104b that supports the lens portion 1102 and legs 1104a for user wearing. The legs 1104a may be connected to the housing 1104b by a hinge and be folded or unfolded.

[0262] Frame 1104 may incorporate a battery, touchpad, microphone, and / or camera. It may also incorporate a projector that outputs light, a processor that controls optical signals, and other components.

[0263] The lens portion 1102 can be an optical component that transmits or reflects light. The lens portion 1102 may include glass, a transparent synthetic resin, or the like.

[0264] Furthermore, the lens unit 1102 reflects the image generated by the light signal transmitted from the projector of the frame 1104 with its rear surface (for example, the surface facing the user's eyes), making the image recognizable to the user's eyes. For example, the user can recognize information such as the time and date displayed on the lens unit 1102, as shown in the figure. In other words, the lens unit 1102 is a type of display device, and the display device DD according to the above embodiment can be applied to the lens unit 1102.

[0265] Referring to FIG. 20, the display device DD according to the embodiment can be applied to a smart watch 1200 including a display unit 1220 and a strap unit 1240.

[0266] The smart watch 1200 is a wearable electronic device and can have a structure in which the strap unit 1240 is worn on the user's wrist. Here, the display device DD according to one or more embodiments is applied to the display unit 1220, and image data including time information can be provided to the user.

[0267] Referring to FIG. 21, the display device DD according to one or more embodiments can be applied to an automotive display 1300. Here, the automotive display 1300 can refer to an electronic device provided inside and outside a vehicle and providing image data.

[0268] According to an example, the display device DD can be applied to at least any one of an infortainment panel 1310, a cluster 1320, a co-driver display 1330, a head-up display 1340, a side mirror display 1350, and / or a rear seat display provided in a vehicle.

[0269] Referring to FIG. 22, the display device DD according to one or more embodiments can be applied to a head-mounted display (HMD) including a head-mounted band 1402 and a display storage case 1404. The head-mounted display is a wearable electronic device that can be worn on the user's head.

[0270] The head-mounted band 1402 can be connected to the display storage case 1404 to fix the display storage case 1404 at a desired position. In the drawings, the head-mounted band 1402 is shown as being able to surround the upper and both side surfaces of the user's head, but the present disclosure is not limited thereto. The head-mounted band 1402 is for fixing a head-mounted display to the user's head and may be formed in the form of a spectacle frame or a helmet.

[0271] The display storage case 1404 can store the display device DD and include at least one lens. At least one lens is a part that provides an image to the user. For example, the display device DD according to one or more embodiments can be applied to the left-eye lens and the right-eye lens embodied in the display storage case 1404.

[0272] The application fields of the display device DD according to one or more embodiments are not limited to the above examples and can be applied to various fields according to one or more embodiments.

[0273] The above description merely exemplarily explains the technical idea of the present disclosure. Those having ordinary knowledge in the technical field to which the present disclosure pertains can make various modifications and variations without departing from the idea and scope of the present disclosure. Therefore, the embodiments of the present disclosure described above can also be implemented separately or in combination with each other.

[0274] Therefore, although the present disclosure has been specifically illustrated and described with reference to its embodiments, it will be understood by those having ordinary knowledge in the technical field of the present invention that the form and details can be variously changed without departing from the idea and scope of the present disclosure by the claims and their equivalents.

Claims

1. A plurality of light-emitting elements arranged on a substrate and arranged in the form of a matrix defined by a first arrangement direction and a second arrangement direction intersecting the first arrangement direction, A first subpixel region and a second subpixel region are superimposed on at least a portion of the plurality of light-emitting elements, spaced apart from each other along a first direction, and extending in a second direction intersecting the first direction, The substrate includes a light-shielding layer disposed on the substrate and defining the first subpixel region and the second subpixel region, The first direction is the direction along the width direction of the first subpixel region and the second subpixel region, The second direction is the longitudinal direction of the first subpixel region and the second subpixel region, The first arrangement direction forms an angle (θ) of 5 to 40 degrees with respect to the second direction. The second alignment direction forms an angle (θ) of 5 to 40 degrees with respect to the first direction. The first subpixel region is parallel to the first direction and includes a side having a first length, The plurality of light-emitting elements include a first light-emitting element and a second light-emitting element, wherein the first light-emitting element and the second light-emitting element are adjacent to each other in the first arrangement direction and separated by a first arrangement distance, A display device characterized in that the first length and the first array distance satisfy the following formula. (Here, x １ (where is the first length and y is the first arrangement distance.)

2. The display device according to claim 1, characterized in that the first array distance is the shortest distance between the first light-emitting element and the second light-emitting element.

3. A plurality of light-emitting elements arranged on a substrate and arranged in the form of a matrix defined by a first arrangement direction and a second arrangement direction intersecting the first arrangement direction, A first subpixel region and a second subpixel region are superimposed on at least a portion of the plurality of light-emitting elements, spaced apart from each other along a first direction, and extending in a second direction intersecting the first direction, The substrate includes a light-shielding layer disposed on the substrate and defining the first subpixel region and the second subpixel region, The first direction is the direction along the width direction of the first subpixel region and the second subpixel region, The second direction is the longitudinal direction of the first subpixel region and the second subpixel region, The first arrangement direction forms an angle (θ) of 5 to 40 degrees with respect to the second direction. The second alignment direction forms an angle (θ) of 5 to 40 degrees with respect to the first direction. The first subpixel region and the second subpixel region further include a third subpixel region separated along the first direction, The first subpixel region is located on one side of the second subpixel region, and the third subpixel region is located on the other side of the second subpixel region. One end of the first subpixel region and the other end of the third subpixel region are separated by a second length. The plurality of light-emitting elements include a first light-emitting element and a second light-emitting element, which are adjacent to each other in the first array direction and separated by a first array distance, and the first light-emitting element and the second light-emitting element are adjacent to each other in the first array direction and separated by a first array distance, The display device according to claim 1, characterized in that the second length and the first array distance satisfy the following formula. (Here, x ２ (where is the second length and y is the first arrangement distance.)

4. A plurality of light-emitting elements are arranged on a substrate and arranged in a matrix form defined by a first arrangement direction and a second arrangement direction intersecting the first arrangement direction, A first subpixel region and a second subpixel region are superimposed on at least a portion of the plurality of light-emitting elements, spaced apart from each other along a first direction, and extending in a second direction intersecting the first direction, The substrate includes a light-shielding layer disposed on the substrate and defining the first subpixel region and the second subpixel region, The first direction is the direction along the width direction of the first subpixel region and the second subpixel region, The second direction is the longitudinal direction of the first subpixel region and the second subpixel region, The first arrangement direction forms an angle (θ) of 5 to 40 degrees with respect to the second direction. The second alignment direction forms an angle (θ) of 5 to 40 degrees with respect to the first direction. The first subpixel region and the second subpixel region are separated by a separation distance. Each of the plurality of light-emitting elements has a base length, A display device characterized in that the separation distance and the bottom length satisfy the following formula. (Here, z is the separation distance and w is the base length.)

5. The bottom surface of the plurality of light-emitting elements has a circular shape. The display device according to claim 4, characterized in that the length of the base is the diameter of the circle.

6. The bottom surface of the plurality of light-emitting elements has a rectangular shape. The display device according to claim 4, characterized in that the base length is the length of the diagonal of the rectangle.

7. A plurality of light-emitting elements arranged on a substrate and arranged in the form of a matrix defined by a first arrangement direction and a second arrangement direction intersecting the first arrangement direction, A first subpixel region and a second subpixel region are superimposed on at least a portion of the plurality of light-emitting elements, spaced apart from each other along a first direction, and extending in a second direction intersecting the first direction, The substrate includes a light-shielding layer disposed on the substrate and defining the first subpixel region and the second subpixel region, The first direction is the direction along the width direction of the first subpixel region and the second subpixel region, The second direction is the longitudinal direction of the first subpixel region and the second subpixel region, The first arrangement direction forms an angle (θ) of 5 to 40 degrees with respect to the second direction. The second alignment direction forms an angle (θ) of 5 to 40 degrees with respect to the first direction. A light control unit is arranged on the plurality of light-emitting elements and is configured to change the wavelength of light emitted from the light-emitting elements. The system further includes the first subpixel region, the second subpixel region, and a third subpixel region that is separated from each other along the first direction and extends in the second direction, The display device is characterized in that the optical control unit includes a first wavelength conversion pattern superimposed on the first subpixel region, a second wavelength conversion pattern superimposed on the second subpixel region, and a light transmission pattern superimposed on the third subpixel region.

8. At least a portion of the plurality of light-emitting elements overlaps with the first subpixel region, yet another portion of the plurality of light-emitting elements overlaps with the second subpixel region, and yet another portion of the plurality of light-emitting elements overlaps with the third subpixel region. The display device according to claim 7, characterized in that the plurality of light-emitting elements emit light of the same color from each other.

9. The display device according to any one of claims 1 to 8, characterized in that the number of the plurality of light-emitting elements per unit area on the substrate is uniform.

10. From the first subpixel region, light of the first color is emitted. The display device according to any one of claims 1 to 8, characterized in that a second color of light is emitted from the second subpixel region.

11. The steps include providing a multilayer substrate and The steps include forming a first semiconductor layer, an active layer, and a second semiconductor layer on the laminated substrate, The steps include etching the first semiconductor layer, the active layer, and the second semiconductor layer to provide a plurality of light-emitting elements, The steps include separating the laminated substrate from the plurality of light-emitting elements and bonding the plurality of light-emitting elements onto a donor film, The steps include: arranging the plurality of light-emitting elements arranged on the donor film onto a substrate; The step includes arranging light-shielding layers that define a first subpixel region and a second subpixel region on the plurality of light-emitting elements, The step of providing the plurality of light-emitting elements includes the step of patterning the plurality of light-emitting elements into a matrix form defined by a first arrangement direction and a second arrangement direction intersecting the first arrangement direction, The step of arranging the light-shielding layer includes forming the light-shielding layer such that the first subpixel region and the second subpixel region are separated from each other along a first direction, and that the light-shielding layer extends in a second direction intersecting the first direction, The first direction is the direction along the width direction of the first subpixel region and the second subpixel region, The second direction is the longitudinal direction of the first subpixel region and the second subpixel region, The first arrangement direction forms an angle (θ) of 5 to 40 degrees with respect to the second direction. A method for manufacturing a display device, characterized in that the second arrangement direction forms an angle (θ) of 5 to 40 degrees with respect to the first direction.

12. The method for manufacturing a display device according to claim 11, further comprising the step of deforming the donor film so that the separation distance between the plurality of light-emitting elements increases.

13. Before the step of deforming the donor film is performed, the plurality of light-emitting elements are separated from each other by an undeformed distance. The method for manufacturing a display device according to claim 12, characterized in that, in the step of deforming the donor film, the separation distance between the plurality of light-emitting elements increases so that the plurality of adjacent light-emitting elements in the first array direction are separated by a first array distance, and the plurality of adjacent light-emitting elements in the second array direction are separated by a second array distance.

14. The expandable range is a multiple of the length within the limits that the donor film remains non-destructive when expanded in one direction. The method for manufacturing a display device according to claim 13, characterized in that the expandable range of the donor film satisfies the following formula. (Here, A is the expandable range of the donor film, y is the first arrangement distance, and v is the undeformed interval.)

15. The process further includes the step of forming a first wavelength conversion pattern, a second wavelength conversion pattern, and a light transmission pattern, which are arranged in the same layer as the light-shielding layer. The step of arranging the light-shielding layer includes forming the light-shielding layer such that it defines the first subpixel region, the second subpixel region, and a third subpixel region separated along the first direction and extending in the second direction. The plurality of light-emitting elements emit a third color of light, The first wavelength conversion pattern converts the third color of light into the first color of light, the second wavelength conversion pattern converts the third color of light into the second color of light, and the light transmission pattern transmits the third color of light. The method for manufacturing a display device according to claim 11, characterized in that the plurality of light-emitting elements include a first light-emitting element superimposed on the first subpixel region and the first wavelength conversion pattern, a second light-emitting element superimposed on the second subpixel region and the second wavelength conversion pattern, and a third light-emitting element superimposed on the third subpixel region and the light transmission pattern.

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