A high-voltage composite MOSFET and a high-voltage amplifier that applies it to the output stage circuit of a high-voltage amplifier.

Abstract

To solve a problem that a high-voltage mosFET has a large gate input capacitance, and therefore, there is a limit to high-speed and wideband operation of a high-voltage amplifier using the high-voltage mosFET.SOLUTION: A high-voltage composite mosFET having a gate of a low input capacitance and a source of a low input impedance is devised and applied to a high-voltage amplifier using the high-voltage mosFET. In addition, a circuit for driving a high impedance gate of the composite-type mosFET by the low impedance source of the composite-type mosFET paired with a positive-side output stage and a negative-side output stage of a high-voltage amplification part with respect to an output via a capacitor is added to a high-voltage amplification circuit. Further, the high-voltage composite mosFET having a high performance by adding a capacitor for preventing a transmission has achieved a high-speed and a wideband operation of a stable high-voltage amplifier without increasing a power loss.SELECTED DRAWING: Figure 2-1

Description

[Technical Field]

[0001] This concerns high-voltage composite MOSFETs and the improvement of high-voltage amplifier performance. [Background technology]

[0002] Since commercially available high-voltage MOSFETs have a voltage rating of at most a few kV, when constructing a high-voltage amplifier that uses such a MOSFET to output a voltage higher than its voltage rating, Multiple high-voltage MOSFETs are connected in series in multiple stages between the high-voltage power supply and the output terminal. The voltage applied to each MOSFET is changed according to the changing input signal, amplifying it to a predetermined value and outputting it. In this case, it is necessary to rapidly control the gates of these MOSFETs so that the voltage applied to each stage of the MOSFET is always evenly divided below its withstand voltage.

[0003] However, in high-voltage MOSFETs at each stage to which a voltage of several kV is applied, the voltage changes over a wide range from 0 to several kV depending on the input signal. Due to the adverse effects of the Miller effect, which increases in proportion to this voltage change, it becomes difficult to drive the input capacitance at the gate of these MOSFETs at high speed. Therefore, in conventional high-voltage amplifiers, the higher the output voltage and the more series-connected stages of high-voltage MOSFETs there are, the more difficult it is to achieve high speed and wide bandwidth, resulting in a narrow bandwidth.

[0004] Patent Document 1 describes a technology that attempts to solve this problem. Specifically, as shown in Figure 3 of the document, the gate of a high-voltage MOSFET Q1 with a large input capacitance is driven by a push-pull circuit of a low-voltage n-channel MOSFET Q2 and a p-channel MOSFET Q3 with small gate input capacitances. However, when the output changes with a large amplitude, this push-pull circuit has a problem of instability because both the p-channel and n-channel MOSFETs become inactive at the moment the operation switches between them, thus limiting its ability to achieve high speed and wide bandwidth.

[0005] Figure 1-1 shows a basic circuit example of a conventional high-voltage amplifier, which is the basic circuit of the high-voltage amplifier of the present invention shown in Figure 2-1 and subsequent figures. In Figure 1-1, the positive output stage between the +2100V high-voltage power supply +HVps and the output terminal, and the negative output stage between the -2100V high-voltage power supply -HVps and the output terminal, both of which are high-voltage amplifiers with ±2kV output (amplifier gain of 200 times) using two series-connected high-voltage n-channel MOSFETs Q102, Q101, Q202, and Q201. The signal input to the low-voltage amplifier is amplified by the operational amplifier U1, its source current is controlled by the positive output stage of the high-voltage amplifier via photocoupler U101, and its sink current is controlled by the negative output stage of the high-voltage amplifier via photocoupler U201, thereby amplifying it to a high voltage.

[0006] The output voltage is negatively fed back to the operational amplifier U1 of the low-voltage amplification section through resistors R2 and R1 with predetermined resistance values ​​connected to the output terminal, setting the gain of the high-voltage amplifier to 200 times. The capacitance C2, connected in parallel with resistor R2, determines the bandwidth of the high-voltage amplifier. While it is possible to widen the bandwidth by reducing the capacitance of capacitor C2, it is not possible to widen the bandwidth indefinitely beyond the performance capabilities of the high-voltage amplifier. Therefore, unless the basic performance is good, simply reducing the capacitance of capacitor C2 will not result in wider bandwidth. Figure 1-3 shows an example where the output waveform is distorted because the bandwidth is extended beyond the response performance of the high-voltage amplification section, which can also cause a voltage exceeding the voltage rating to be applied to the MOSFET.

[0007] The input signal amplified by the operational amplifier U1, which operates on a ±15V power supply, drives the photocouplers U101 and U102 via resistors R3 and R4, and the signal is transmitted to the high-voltage amplification section. Resistors R5 and R6 are provided to ensure a small current flows from the ±15V power supply to the inputs of photocouplers U101 and U102 through these resistors when the input signal is 0V, i.e., when the output of operational amplifier U1 is 0V. This ensures the quiescent current of each MOSFET in the positive and negative output stages and eliminates zero-crossing distortion. Diodes D1 and D2 are protection diodes that prevent reverse bias voltage from being applied to the light-emitting diodes at the inputs of photocouplers U101 and U201. The capacitor C1 and resistor R7 connected in series between the output and inverting input of the operational amplifier U1 are provided to compensate for the phase of the high-voltage amplifier and prevent oscillation.

[0008] Two high-voltage n-channel MOSFETs Q102 and Q101, a current-limiting resistor R141, and a photocoupler U101 are connected in series in the positive output stage of the high-voltage amplifier section, and are placed between the +HVps high-voltage power supply and the output terminal. In the negative output stage of the high-voltage amplifier, two high-voltage n-channel MOSFETs Q202 and Q201 are connected in series, along with a current-limiting resistor R241 and a photocoupler U201, which are placed between the output terminal and the -HVps high-voltage power supply. By connecting multiple high-voltage MOSFETs in series in this way, it becomes possible to realize a high-voltage amplifier exceeding the voltage rating of the MOSFETs. Current limiting resistors R141 and R241 are provided to limit the maximum output current and protect the high-voltage amplifier even in the event of an output short-circuit fault where the load becomes 0Ω.

[0009] High resistors R102 and R101 of 5MΩ, connected in series with the positive output stage, and a Zener diode Z101 for generating a constant voltage are placed between the +HVps high voltage power supply and the output terminal. The potentials equally divided by these resistors give the gate potential VQ102-G of the MOSFET Q102, and the Zener voltage of the Zener diode Z101 gives the gate potential of the MOSFET Q101. A 5MΩ high resistance R202 and R201 connected in series to the negative output stage, and a Zener diode Z201 for generating a constant voltage are connected between the output terminal and the -HVps high voltage power supply. The potential equally divided by these resistances gives the gate potential VQ202-G of the mosFET Q202, and the Zener voltage of the Zener diode Z201 gives the gate potential of the mosFET Q201. Capacitors C101 and C201 connected in parallel to Zener diodes Z101 and Z201 respectively are capacitors for stabilizing their Zener voltages. Resistors R131 and R231 are for preventing oscillation, for example, about 0 to 1kΩ, and are inserted between the gates of mosFETs Q101 and Q201 and the Zener diodes Z101 and Z201 respectively. Since the voltage drops due to these resistors can be ignored, the potential of the Zener voltage can be considered as the gate potential.

Prior Art Documents

Patent Documents

[0010]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0011] However, in the conventional circuit example shown in Fig. 1-1, there were problems as described below. First, Fig. 1-2 is the response waveform when a sine wave signal with an amplitude of ±10V and a frequency of 100Hz is input to the high voltage amplifier of Fig. 1-1. Since resistors R102 and R101 have equal resistance values, the voltages applied between the drain and source of MOSFETs Q102 and Q101 are approximately equal. With a low-frequency sine wave input of around 100 Hz, the gate waveform VQ102-G of MOSFET Q102 always draws a sine wave with an amplitude located approximately midway between the positive high-voltage power supply +HVps and the output waveform, as shown in Figure 1-2. In this case, the voltage distribution between the drain and source of MOSFETs Q102 and Q101 is always maintained in an evenly balanced state. Since resistors R202 and R201 have equal resistance values, the voltages applied between the drain and source of MOSFETs Q202 and Q201 are approximately equal. With a low-frequency sine wave input of around 100 Hz, the gate waveform VQ202-G of MOSFET Q202 always draws a sine wave with an amplitude located approximately midway between the negative high-voltage power supply -HVps and the output waveform, as shown in Figure 1-2. In this case, the voltage distribution between the drain and source of MOSFETs Q202 and Q201 is always maintained in an evenly balanced state.

[0012] Figure 1-3 shows the response waveform when a sine wave signal with an amplitude of ±10V and a frequency of 1kHz is input to the high-voltage amplifier shown in Figure 1-1. When the input signal frequency is increased to 1kHz, the voltage distribution balance of MOSFETs Q102 and Q101, and the voltage distribution balance of MOSFETs Q202 and Q201 are greatly disrupted, as shown in Figure 1-3, and the gate waveform and output waveform of VQ102-G and VQ202-G are greatly distorted. When a rapidly changing input signal, such as a high-frequency sine wave or pulse waveform, disrupts the voltage distribution balance of high-voltage MOSFETs connected in series, a voltage exceeding the allowable voltage rating is applied to a specific MOSFET, potentially destroying it in the worst-case scenario. This waveform distortion is caused by the gate input capacitance of several hundred to several thousand pF in the high-voltage MOSFETs Q102 and Q202 being driven by the high resistance of resistors R102, R101, R202, and R201 (5MΩ). As a result, the gate potentials VQ102-G and VQ202-G of MOSFETs Q102 and Q202 are unable to follow the input signal due to the adverse effects of the Miller effect. Reducing this 5MΩ resistance value to 500kΩ would improve the response waveform, but it wouldn't yield satisfactory performance. Moreover, the power loss in these resistors would increase to several watts, and the physical size of the resistors would also increase, making it impractical. This invention was devised in response to the above-mentioned problems and in order to effectively solve them.

[0013] The object of the present invention is to provide a high-voltage composite MOSFET that improves the response performance of a circuit in which multiple high-voltage MOSFETs are connected in series in the high-voltage output section of a high-voltage amplifier, and that can efficiently increase the speed and bandwidth of the high-voltage amplifier without increasing power loss, and a high-voltage amplifier that applies this to the output stage circuit of the high-voltage amplification section. [Means for solving the problem]

[0014] The term "constant voltage circuit" as described in the specification and claims refers to a circuit including a linear regulator (series regulator), a switching regulator (DC / DC power supply), a battery, or a combination thereof, which has at least two output terminals and a positive and negative constant voltage terminal between those two terminals.

[0015] Claim 1 The present invention relating to this invention is A second low-voltage MOSFET (Q51) having the same channel drain, gate, and source as the first high-voltage MOSFET (Q1) having drain, gate, and source is added. One end of a resistor (R41) with an impedance of 0Ω or more is connected to the source of the first MOSFET (Q1), and the other end of the resistor (R41) is connected to the drain of the added second MOSFET (Q51). Connect the first terminal of a resistor (R61) with an impedance of 0Ω or more to the gate of the first MOSFET (Q1). The system has a constant voltage circuit, the first terminal of the constant voltage end of the constant voltage circuit is connected to the second terminal of the resistor (R61), and the second terminal of the constant voltage end of the constant voltage circuit is connected to the source of the second MOSFET (Q51). By maintaining a constant voltage between the gate of the first MOSFET (Q1) and the source of the second MOSFET (Q51), The gate of the second MOSFET (Q51) acts as the gate of the composite MOSFET. The source of the second MOSFET (Q51) is used as the source of the composite MOSFET. The drain of the first MOSFET (Q1) is the drain of the composite MOSFET. In a composite MOSFET configured to function, The constant voltage circuit includes a resistor (R51), a Zener diode (Z51), and a capacitor (C51). The first terminal of the resistor (R51) is connected to the drain of the first MOSFET (Q1), or to a positive high-voltage power supply, or to the drain of another MOSFET located on the higher potential side of a series-connected MOSFET; one end of the Zener diode (Z51) and capacitor (C51), which are connected in parallel to generate a constant voltage with the current flowing through the resistor (R51), is connected to the second terminal of the resistor (R51), and is also connected to the second terminal of the resistor (R61); and the other end of the parallel-connected Zener diode (Z51) and capacitor (C51) is connected to the source of the second MOSFET (Q51). The anode, which is one end of the Zener diode (Z51), is connected to the source side of the second MOSFET (Q51). Apply a high-voltage n-channel MOSFET to the first MOSFET (Q1), and a low-voltage n-channel MOSFET with a low gate input capacitance and an allowable current equal to or greater than the current limited by the resistor (R41) to the second MOSFET (Q51). By doing so, the composite MOSFET operates as an n-channel MOSFET with a smaller gate input capacitance than the first MOSFET (Q1), the voltage change between the drain and gate of the second MOSFET (Q51) is small, so the Miller effect is suppressed, the high voltage withstand of the first MOSFET (Q1) is maintained, characterized in that the first and second MOSFETs (Q1, Q51) are configured to be overcurrent protected by the resistor (R41) below the allowable current, which is a high-voltage composite n-channel MOSFET. In addition, this Claim 1 relates to Figure 3-1A.

[0016] Claim 2 The present invention related to A second low-voltage MOSFET (Q51) having the same channel drain, gate, and source as the first high-voltage MOSFET (Q1) having drain, gate, and source is added. One end of a resistor (R41) with an impedance of 0Ω or more is connected to the source of the first MOSFET (Q1), and the other end of the resistor (R41) is connected to the drain of the added second MOSFET (Q51). Connect the first terminal of a resistor (R61) with an impedance of 0Ω or more to the gate of the first MOSFET (Q1). The system has a constant voltage circuit, the first terminal of the constant voltage end of the constant voltage circuit is connected to the second terminal of the resistor (R61), and the second terminal of the constant voltage end of the constant voltage circuit is connected to the source of the second MOSFET (Q51). By maintaining a constant voltage between the gate of the first MOSFET (Q1) and the source of the second MOSFET (Q51), The gate of the second MOSFET (Q51) acts as the gate of the composite MOSFET. The source of the second MOSFET (Q51) is used as the source of the composite MOSFET. The drain of the first MOSFET (Q1) is the drain of the composite MOSFET. In a composite MOSFET configured to function, The constant voltage circuit includes a resistor (R51), a Zener diode (Z51), and a capacitor (C51). The drain of the first MOSFET (Q1), or a negative high voltage power supply, or configured in series The first end of the resistor (R51) is connected to the drain of another MOSFET located on the lower potential side of the MOSFET. The Zener diode (Z51) and capacitor (C51), which are connected in parallel to generate a constant voltage with the current flowing through the resistor (R51), have one end connected to the second terminal of the resistor (R51) and the second terminal of the resistor (R61), and the other end of the parallel-connected Zener diode (Z51) and capacitor (C51) is connected to the source of the second MOSFET (Q51). The direction is such that the cathode, which is one end of the Zener diode (Z51), is connected to the source side of the second MOSFET (Q51). By applying a high-voltage p-channel MOSFET as the first MOSFET (Q1) and a low-voltage p-channel MOSFET with a low gate input capacitance and a current tolerance similar to that of the first MOSFET (Q1) or greater than the current limited by the resistor (R41) as the second MOSFET (Q51), The composite MOSFET operates as a p-channel MOSFET. The gate input capacitance is smaller than that of the first MOSFET (Q1). Because the voltage change between the drain and gate of the second MOSFET (Q51) is small, the Miller effect is suppressed. Maintaining the high voltage rating of the first MOSFET (Q1), The resistor (R41) provides overcurrent protection to keep the first and second MOSFETs (Q1, Q51) below their allowable current. This is a high-voltage composite p-channel MOSFET characterized by being configured in such a way. Furthermore, this Claim 2 This relates to Figure 3-2A.

[0017] Claim 3 The present invention relating to this invention is A second low-voltage MOSFET (Q51) having the same channel drain, gate, and source as the first high-voltage MOSFET (Q1) having drain, gate, and source is added. One end of a resistor (R41) with an impedance of 0Ω or more is connected to the source of the first MOSFET (Q1), and the other end of the resistor (R41) is connected to the drain of the added second MOSFET (Q51). Connect the first terminal of a resistor (R61) with an impedance of 0Ω or more to the gate of the first MOSFET (Q1). The device has a constant voltage circuit, the first terminal of the constant voltage terminal of the constant voltage circuit is connected to the second terminal of the resistor (R61), the second terminal of the constant voltage terminal of the constant voltage circuit is connected to the first terminal of a resistor (R31) of 0Ω or more, and the second terminal of the resistor (R31) is connected to the gate of a second MOSFET (Q51). By maintaining a constant voltage between the gate of the first MOSFET (Q1) and the gate of the second MOSFET (Q51), The first terminal of the resistor (R31) connected to the gate of the second MOSFET (Q51) is As the gate of a composite MOSFET, The source of the second MOSFET (Q51) is used as the source of the composite MOSFET. The drain of the first MOSFET (Q1) is the drain of the composite MOSFET. In a composite MOSFET configured to function, The constant voltage circuit includes a resistor (R51), a Zener diode (Z51), and a capacitor (C51). The first terminal of the resistor (R51) is connected to the drain of the first MOSFET (Q1), or to a positive high-voltage power supply, or to the drain of another MOSFET located on the higher potential side of a series-connected MOSFET, and one end of the Zener diode (Z51) and capacitor (C51), which are connected in parallel to generate a constant voltage with the current flowing through the resistor (R51), is connected to the second terminal of the resistor (R51), and also to the second terminal of the resistor (R61), The other ends of the parallel-connected Zener diode (Z51) and capacitor (C51) are connected to the first terminal of the resistor (R31). The anode, which is one end of the Zener diode (Z51), is connected to the first terminal of the resistor (R31) in the following direction: By applying a high-voltage n-channel MOSFET as the first MOSFET (Q1) and a low-voltage n-channel MOSFET with a low source input impedance and a current tolerance similar to that of the first MOSFET (Q1) or greater than the current limited by the resistor (R41) as the second MOSFET (Q51), A composite MOSFET operates as an n-channel MOSFET. The source input impedance is smaller than that of the first MOSFET (Q1). Because the voltage change between the drain and gate of the second MOSFET (Q51) is small, the Miller effect is suppressed. Maintaining the high voltage rating of the first MOSFET (Q1), The resistor (R41) provides overcurrent protection to keep the first and second MOSFETs (Q1, Q51) below their allowable current. This is a high-voltage composite n-channel MOSFET characterized by being configured in such a way. Furthermore, this Claim 3 This relates to Figure 3-1B.

[0018] Claim 4 The present invention relating to this invention is A second low-voltage MOSFET (Q51) having the same channel drain, gate, and source as the first high-voltage MOSFET (Q1) having drain, gate, and source is added. One end of a resistor (R41) with an impedance of 0Ω or more is connected to the source of the first MOSFET (Q1), and the other end of the resistor (R41) is connected to the drain of the added second MOSFET (Q51). Connect the first terminal of a resistor (R61) with an impedance of 0Ω or more to the gate of the first MOSFET (Q1). The device has a constant voltage circuit, the first terminal of the constant voltage terminal of the constant voltage circuit is connected to the second terminal of the resistor (R61), the second terminal of the constant voltage terminal of the constant voltage circuit is connected to the first terminal of a resistor (R31) of 0Ω or more, and the second terminal of the resistor (R31) is connected to the gate of a second MOSFET (Q51). By maintaining a constant voltage between the gate of the first MOSFET (Q1) and the gate of the second MOSFET (Q51), The first terminal of the resistor (R31) connected to the gate of the second MOSFET (Q51) is As the gate of a composite MOSFET, The source of the second MOSFET (Q51) is used as the source of the composite MOSFET. The drain of the first MOSFET (Q1) is the drain of the composite MOSFET. In a composite MOSFET configured to function, The constant voltage circuit includes a resistor (R51), a Zener diode (Z51), and a capacitor (C51). The first terminal of the resistor (R51) is connected to the drain of the first MOSFET (Q1), or to a negative high-voltage power supply, or to the drain of another MOSFET located on the lower potential side of a series-connected MOSFET, and one end of the Zener diode (Z51) and capacitor (C51), which are connected in parallel to generate a constant voltage with the current flowing through the resistor (R51), is connected to the second terminal of the resistor (R51), and also to the second terminal of the resistor (R61), The other ends of the parallel-connected Zener diode (Z51) and capacitor (C51) are connected to the first terminal of the resistor (R31). The cathode of the Zener diode (Z51) is connected to the first terminal of the resistor (R31) in the following direction: By applying a high-voltage p-channel MOSFET as the first MOSFET (Q1) and a low-voltage p-channel MOSFET with a low source input impedance and a current tolerance similar to that of the first MOSFET (Q1) or greater than the current limited by the resistor (R41) as the second MOSFET (Q51), The composite MOSFET operates as a p-channel MOSFET. The source input impedance is smaller than that of the first MOSFET (Q1). Because the voltage change between the drain and gate of the second MOSFET (Q51) is small, the Miller effect is suppressed. Maintaining the high voltage rating of the first MOSFET (Q1), The resistor (R41) provides overcurrent protection to keep the first and second MOSFETs (Q1, Q51) below their allowable current. This is a high-voltage composite p-channel MOSFET characterized by being configured in such a way. Furthermore, this Claim 4 This relates to Figure 3-2B.

[0019] Claim 5 The present invention relating to this invention is In an amplifier, the positive output stage circuit consists of a photocoupler (U101) and two or more N stages of n-channel MOSFETs (Q10i, i=1~N), Let the point with the highest potential in the aforementioned positive output stage circuit be node Hn, and the point with the lowest potential be node Ln. The drain of mosFET(Q10N) is connected to node Hn, the drain of mosFET(Q10i, i=N-1) is connected to its source, the drain of mosFET(Q10i, i=N-2) is connected to its source, and so on, with the mosFETs being connected in series until the drain of the last mosFET(Q101) is connected to the source of mosFET(Q102). To provide a bias voltage to the gate of each MOSFET, N resistors (R10i, i=1 to N) are provided, the first terminal of resistor (R10N) is connected to node Hn, its second terminal is connected to the first terminal of resistor (R10i, i=N-1), and so on, with the resistors connected in series until the first terminal of the last resistor (R101) is connected to the second terminal of resistor (R102). Constant voltage circuit It has, The second terminal of the resistor (R101) is connected to the positive side of the constant voltage terminal of the constant voltage circuit. The negative side of the constant voltage terminal of the constant voltage circuit is connected to node Ln. The second terminal of the resistor (R10N) is connected to the gate of the mosFET (Q10N), The second terminal of the resistor (R10i, i=N-1) is connected to the gate of the mosFET (Q10i, i=N-1), ...and so on, until the second terminal of the resistor (R10i) is connected to the gate of the mosFET (Q10i), and finally the second terminal of the resistor (R101) is connected to the gate of the mosFET (Q101), thereby applying a predetermined bias voltage to the gate of each of the mosFETs (Q10i, i=1~N). The source of the mosFET (Q101) is connected to the collector of the photocoupler (U101) via a current-limiting resistor of 0Ω or more, and its emitter is connected to node Ln. To apply this to the positive output stage of the amplifier, node Hn is connected to a positive high-voltage power supply. Connect node Ln to the output terminal, To the single MOSFET (Q101) Claim 3 of A combination of high-voltage and low-voltage MOSFETs (Q101, Q151) We made By applying a composite n-channel MOSFET, Each of the above MOSFETs (Q10i, i=2~N) Claim 1 of A combination of high-voltage and low-voltage MOSFETs (Q10i, Q15i) A composite n-channel MOSFET is applied. This high-voltage amplifier's positive output stage is characterized by being configured to have a source current control function accelerated by a composite n-channel MOSFET. Furthermore, this Claim 5This relates to the positive output stage of the high-voltage amplifier section in Figures 2-1 and 7-1, where N is 2, and Figure 6, where N is 3, using a composite n-channel MOSFET.

[0020] Claim 6 The present invention relating to this invention is In an amplifier, the negative output stage circuit is composed of a photocoupler (U201) and two or more N stages of n-channel MOSFETs (Q20j, j=1~N), Let the point with the highest potential in the aforementioned negative output stage circuit be node Hn, and the point with the lowest potential be node Ln. The drain of mosFET(Q20N) is connected to node Hn, the drain of mosFET(Q20j, j=N-1) is connected to its source, the drain of mosFET(Q20j, j=N-2) is connected to its source, and so on, with the mosFETs being connected in series until the drain of the last mosFET(Q201) is connected to the source of mosFET(Q202). To provide a bias voltage to the gate of each MOSFET, N resistors (R20j, j=1 to N) are provided, the first terminal of resistor (R20N) is connected to node Hn, its second terminal is connected to the first terminal of resistor (R20j, j=N-1), and so on, with the resistors connected in series until the first terminal of the last resistor (R201) is connected to the second terminal of resistor (R202). Constant voltage circuit It has, The second terminal of the resistor (R201) is connected to the positive side of the constant voltage terminal of the constant voltage circuit. The negative side of the constant voltage terminal of the constant voltage circuit is connected to node Ln. The second terminal of the resistor (R20N) is connected to the gate of the mosFET (Q20N), The second terminal of the resistor (R20j, j=N-1) is connected to the gate of the mosFET (Q20j, j=N-1), ...and so on, until the second terminal of the resistor (R20j) is connected to the gate of the mosFET (Q20j), and finally the second terminal of the resistor (R201) is connected to the gate of the mosFET (Q201), thereby applying a predetermined bias voltage to the gate of each of the mosFETs (Q20j, j=1~N). The source of the MOSFET (Q201) is connected to the collector of the photocoupler (U201) via a current-limiting resistor of 0Ω or more, and its emitter is connected to node Ln. To apply this to the negative output stage of the amplifier, node Hn is connected to the output terminal, Connect node Ln to the negative high voltage power supply, To the single MOSFET (Q201) Claim 3 of A combination of high-voltage and low-voltage MOSFETs (Q201, Q251) By applying a composite n-channel MOSFET, Each of the above MOSFETs (Q20j, j=2~N) Claim 1 of A combination of high-voltage and low-voltage MOSFETs (Q20j, Q25j) A composite n-channel MOSFET is applied. This is the negative output stage of a high-voltage amplifier, characterized by being configured to have a sink current control function accelerated by a composite n-channel MOSFET. Furthermore, this Claim 6 This relates to the negative output stage of the high-voltage amplifier section in Figures 2-1 and 7-2, where N is 2, and Figure 6, where N is 3, using a composite n-channel MOSFET.

[0021] Claim 7 The present invention relating to this invention is In an amplifier, the positive output stage circuit consists of a photocoupler (U101) and two or more N stages of p-channel MOSFETs (Q10i, i=1~N), The point with the highest potential in the aforementioned positive output stage circuit is node Hp, and the point with the lowest potential is node Lp. The drain of mosFET(Q10N) is connected to node Lp, the drain of mosFET(Q10i, i=N-1) is connected to its source, the drain of mosFET(Q10i, i=N-2) is connected to its source, and so on, with the mosFETs being connected in series until the drain of the last mosFET(Q101) is connected to the source of mosFET(Q102). To provide a bias voltage to the gate of each MOSFET, N resistors (R10i, i=1 to N) are provided, the first terminal of resistor (R10N) is connected to node Lp, its second terminal is connected to the first terminal of resistor (R10i, i=N-1), and so on, with the resistors connected in series until the first terminal of the last resistor (R101) is connected to the second terminal of resistor (R102). Constant voltage circuit It has, The second terminal of the resistor (R101) is connected to the negative side of the constant voltage terminal of the constant voltage circuit. The positive side of the constant voltage terminal of the constant voltage circuit is connected to node Hp. The second terminal of the resistor (R10N) is connected to the gate of the mosFET (Q10N), The second terminal of the resistor (R10i, i=N-1) is connected to the gate of the mosFET (Q10i, i=N-1), ...and so on, until the second terminal of the resistor (R10i) is connected to the gate of the mosFET (Q10i), and finally the second terminal of the resistor (R101) is connected to the gate of the mosFET (Q101), thereby applying a predetermined bias voltage to the gate of each of the mosFETs (Q10i, i=1~N). The source of the mosFET (Q101) is connected to the emitter of the photocoupler (U101) via a current-limiting resistor of 0Ω or more, and its collector is connected to node Hp. To apply this to the positive output stage of the amplifier, node Hp is connected to a positive high-voltage power supply. Connect node Lp to the output terminal, To the single MOSFET (Q101) Claim 4 of A combination of high-voltage and low-voltage MOSFETs (Q101, Q151) By applying a composite p-channel MOSFET, Each of the above MOSFETs (Q10i, i=2~N) Claim 2 of A combination of high-voltage and low-voltage MOSFETs (Q10i, Q15i) A composite p-channel MOSFET is applied. This high-voltage amplifier's positive output stage is characterized by being configured to have a source current control function accelerated by a composite p-channel MOSFET. Furthermore, this Claim 7 This relates to the positive output stage of the high-voltage amplifier section in Figures 7-2 and 7-3, where N is 2 and a composite p-channel MOSFET is applied.

[0022] Claim 8 The present invention relating to this invention is In an amplifier, the negative output stage circuit is composed of a photocoupler (U201) and two or more N stages of p-channel MOSFETs (Q20j, j=1~N), The point with the highest potential in the aforementioned negative output stage circuit is node Hp, and the point with the lowest potential is node Lp. The drain of mosFET(Q20N) is connected to node Lp, the drain of mosFET(Q20j, j=N-1) is connected to its source, the drain of mosFET(Q20j, j=N-2) is connected to its source, and so on, with the mosFETs being connected in series until the drain of the last mosFET(Q201) is connected to the source of mosFET(Q202). To provide a bias voltage to the gate of each MOSFET, N resistors (R20j, j=1 to N) are provided, the first terminal of resistor (R20N) is connected to node Lp, its second terminal is connected to the first terminal of resistor (R20j, j=N-1), and so on, with the resistors connected in series until the first terminal of the last resistor (R201) is connected to the second terminal of resistor (R202). Constant voltage circuit It has, The second terminal of the resistor (R201) is connected to the negative side of the constant voltage terminal of the constant voltage circuit. The positive side of the constant voltage terminal of the constant voltage circuit is connected to node Hp. The second terminal of the resistor (R20N) is connected to the gate of the mosFET (Q20N), The second terminal of the resistor (R20j, j=N-1) is connected to the gate of the mosFET (Q20j, j=N-1), ...and so on, until the second terminal of the resistor (R20j) is connected to the gate of the mosFET (Q20j), and finally the second terminal of the resistor (R201) is connected to the gate of the mosFET (Q201), thereby applying a predetermined bias voltage to the gate of each of the mosFETs (Q20j, j=1~N). The source of the mosFET (Q201) is connected to the emitter of the photocoupler (U201) via a current-limiting resistor of 0Ω or more, and its collector is connected to node Hp. To apply this to the negative output stage of the amplifier, node Hp is connected to the output terminal, Connect node Lp to the negative high voltage power supply, To the single MOSFET (Q201) Claim 4 of A combination of high-voltage and low-voltage MOSFETs (Q201, Q251) By applying a composite p-channel MOSFET, Each of the above MOSFETs (Q20j, j=2~N) Claim 2 of A combination of high-voltage and low-voltage MOSFETs (Q20j, Q25j) A composite p-channel MOSFET is applied. This is the negative output stage of a high-voltage amplifier, characterized by being configured to have a sink current control function accelerated by a composite p-channel MOSFET. Furthermore, this Claim 8 This relates to the negative output stage of the high-voltage amplifier section in Figures 7-1 and 7-3, where N is 2 and a composite p-channel MOSFET is applied.

[0023] Claim 9 The present invention relating to this invention is It has an input stage equipped with a low-voltage amplification section, an output stage equipped with a high-voltage amplification section, and a photocoupler interposed between the input stage and the output stage. The output stage comprises a positive output stage connected to a positive high-voltage power supply that controls the source current, and a sink current. It has a negative output stage connected to a negative high-voltage power supply that controls the flow, The aforementioned photocoupler also includes a photocoupler (U101) that controls the positive output stage and a photocoupler (U201) that controls the negative output stage. In a high-voltage amplifier that amplifies an input signal in the low-voltage amplification section, introduces the amplified signal to the high-voltage amplification section via the photocouplers (U101, U201), and outputs the amplified signal from the output terminal, The positive output stage is equipped with 2 or more N MOSFETs (Q10i, i=1~N), These MOSFETs are connected in series in numerical order (Q10N, ..., Q102, Q101), and the source of the MOSFET (Q101) is connected to drive the photocoupler (U101) via a current limiting resistor of 0Ω or more, and these series-connected MOSFETs (Q10i, i=1~N) and the photocoupler (U101) are placed between the positive high-voltage power supply and the output terminal. The negative output stage is equipped with the same N MOSFETs (Q20j, j=1~N), These MOSFETs are connected in series in numerical order (Q20N, ..., Q202, Q201), and the source of the MOSFET (Q201) is connected to the photocoupler (U201) via a current limiting resistor of 0Ω or more, and these series-connected MOSFETs (Q20j, j=1~N) and the photocoupler (U201) are placed between the negative high-voltage power supply and the output terminal. On the positive output stage side, N resistors (R10i, i=1 to N) and a constant voltage circuit or Zener diode (Z101) are provided, and these are connected in series in numerical order (R10N, ..., R102, R101, Z101), and placed between the positive high-voltage power supply and the output terminal. The circuit provides a bias voltage with an equally divided potential from the positive high-voltage power supply to the output terminal to the gate of each MOSFET (Q10i, i=1~N) of the positive output stage, On the negative output stage side, N resistors (R20j, j=1~N) and a constant voltage circuit or Zener diode (Z201) are provided, and these are connected in series in numerical order (R20N, ..., R202, R201, Z201), and placed between the negative high-voltage power supply and the output terminal. The circuit includes a circuit that applies bias voltages of equally divided potentials from the negative high-voltage power supply to the output terminal to the gates of each mosFET (Q20j, j=1~N) of the negative output stage, In a high-voltage amplifier configured such that the high-voltage amplification section controls the source current in the positive output stage and the sink current in the negative output stage, As the positive output stage of the high-voltage amplifier section, The above mosFET (Q10i, i=1~N) A composite MOSFET combining high-voltage and low-voltage MOSFETs (Q10i, Q15i). Replaced with Claim 5 ,or Claim 7 Apply the output stage, As the negative output stage of the high-voltage amplifier section, The above MOSFET (Q20j, j=1~N) A composite MOSFET combining high-voltage and low-voltage MOSFETs (Q20j, Q25j). Replaced with Claim 6 ,or Claim 8 Apply the output stage, This high-voltage amplifier is characterized by being configured to achieve high speed and wide bandwidth. Furthermore, this Claim 9 is the same as Claims 5-8 This relates to a high-voltage amplifier that uses a composite type MOSFET.

[0024] Claim 10 The present invention relating to this invention is Claim 9 In the high-voltage amplifier described above, the mosFET (Q15i, i=1~N) which is combined with the mosFET (Q10i, i=1~N) to form a composite mosFET, and the mosFET (Q25j, j=1~N) which is combined with the mosFET (Q20j, j=1~N) to form a composite mosFET, In the case where the positive output stage MOSFET (Q15i, i=1~N) and the negative output stage MOSFET (Q25j, j=1~N) are composed of n-channel or p-channel MOSFETs, as shown in Figures 7-1 and 7-2, the positive output stage and the negative output stage are composed of MOSFETs of different channels, then for i=2~N, j=i is used. As shown in Figures 2-1, 6, and 7-3, when the positive output stage and the negative output stage are composed of MOSFETs of the same channel, i and j are set as j = N + 2 - i for i = 2 to N. Two (N-1) sets of resistors and capacitors of 0Ω or greater are provided in series. For each of the N-1 combinations of MOSFETs (Q15i, Q25j) consisting of the MOSFET (Q15i) of the positive output stage and the MOSFET (Q25j) of the negative output stage, The series-connected resistor and capacitor are connected between the source of the mosFET(Q15i) and the gate of the mosFET(Q25j), and the series-connected resistor and capacitor are connected between the source of the mosFET(Q25j) and the gate of the mosFET(Q15i), This device is characterized by a configuration in which a low-impedance source drives a high-impedance gate through a series-connected resistor and capacitor, thereby achieving high speed and wide bandwidth. It is a high-voltage amplifier. Furthermore, this Claim 10 This relates to the resistors R172, R173, R272, R273 and capacitors C172, C173, C272, C273 in the high-voltage amplifiers shown in Figures 2-1, 7-1, 7-2, 7-3 (where N is 2) and Figure 6 (where N is 3).

[0025] Claim 11 The present invention relating to this invention is Claim 9 In the high-voltage amplifier described above, N sets of resistors and capacitors with an impedance of 0Ω or greater are provided in series. These are connected in parallel to each of the N resistors (R10i, i=1~N) in the positive output stage, and N sets of resistors and capacitors of 0Ω or more connected in series are further provided. This high-voltage amplifier is characterized by connecting these in parallel to each of the N resistors (R20j, j=1~N) in the negative output stage, thereby preventing oscillation and providing a stable, high-speed response. Furthermore, this Claim 11This relates to the resistors R181~R183, R281~R283 and capacitors C161~C163, C261~C263 in the high-voltage amplifiers shown in Figures 2-1, 7-1, 7-2, 7-3 (where N is 2) and Figure 6 (where N is 3).

[0026] Claim 12 The present invention relating to this invention is Claim 10 In the high-voltage amplifier described above, In each of the resistors (R10i, i=1~N) and (R20j, j=1~N) in the output stage, Claim 11 The series-connected resistor and capacitor described above are connected in parallel, This high-voltage amplifier is characterized by its configuration that prevents oscillation, ensures stable operation even under no-load conditions, and enables high-speed, wide-bandwidth operation. Furthermore, this Claim 12 teeth, Claim 10 and Claim 11 The claim relates to a high-voltage amplifier as shown in Figures 2-1, 7-1, 7-2, 7-3, and Figure 6, where N is 3, by combining the above.

[0027] Claim 13 The present invention relating to this invention is It has an input stage equipped with a low-voltage amplification section, an output stage equipped with a high-voltage amplification section, and a photocoupler interposed between the input stage and the output stage. The output stage includes a positive output stage connected to a positive high-voltage power supply that controls the source current, and a negative output stage connected to a negative high-voltage power supply that controls the sink current. The aforementioned photocoupler also includes a photocoupler (U101) that controls the positive output stage and a photocoupler (U201) that controls the negative output stage. In a high-voltage amplifier that amplifies an input signal in the low-voltage amplification section, introduces the amplified signal to the high-voltage amplification section via the photocouplers (U101, U201), and outputs the amplified signal from the output terminal, The positive output stage is equipped with 2 or more N MOSFETs (Q10i, i=1~N), These MOSFETs are connected in series in numerical order (Q10N, ..., Q102, Q101), and the source of the MOSFET (Q101) is connected to drive the photocoupler (U101) via a current limiting resistor of 0Ω or more, and these series-connected MOSFETs (Q10i, i=1~N) and the photocoupler (U101) are placed between the positive high-voltage power supply and the output terminal. The negative output stage is equipped with the same N MOSFETs (Q20j, j=1~N), These MOSFETs are connected in series in numerical order (Q20N, ..., Q202, Q201), and the source of the MOSFET (Q201) is connected to the photocoupler (U201) via a current limiting resistor of 0Ω or more, and these series-connected MOSFETs (Q20j, j=1~N) and the photocoupler (U201) are placed between the negative high-voltage power supply and the output terminal. On the positive output stage side, N resistors (R10i, i=1 to N) and a constant voltage circuit or Zener diode (Z101) are provided, and these are connected in series in numerical order (R10N, ..., R102, R101, Z101), and placed between the positive high-voltage power supply and the output terminal. The circuit provides a bias voltage with an equally divided potential from the positive high-voltage power supply to the output terminal to the gate of each MOSFET (Q10i, i=1~N) of the positive output stage, On the negative output stage side, N resistors (R20j, j=1~N) and a constant voltage circuit or Zener diode (Z201) are provided, and these are connected in series in numerical order (R20N, ..., R202, R201, Z201), and placed between the negative high-voltage power supply and the output terminal. The circuit includes a circuit that applies bias voltages of equally divided potentials from the negative high-voltage power supply to the output terminal to the gates of each mosFET (Q20j, j=1~N) of the negative output stage, In a high-voltage amplifier configured such that the high-voltage amplification section controls the source current in the positive output stage and the sink current in the negative output stage, In the above MOSFET (Q10i, i=1~N) and the above MOSFET (Q20j, j=1~N) The MOSFET (Q10i, i=1~N) of the positive output stage, which is composed of n channels or p channels, The MOSFET (Q20j, j=1~N) of the negative output stage, which is composed of n channels or p channels If the positive output stage and the negative output stage are composed of MOSFETs of different channels, Let i and j be set as j=i for i=2 to N. As shown in Figure 4-1, when the positive output stage and the negative output stage are composed of MOSFETs of the same channel, i and j are set as j = N + 2 - i for i = 2 to N. Two (N-1) sets of resistors and capacitors of 0Ω or greater are provided in series. For each of the N-1 combinations of MOSFETs (Q10i, Q20j) consisting of the MOSFET (Q10i) of the positive output stage and the MOSFET (Q20j) of the negative output stage, By connecting the series-connected resistor and capacitor between the source of the mosFET(Q10i) and the gate of the mosFET(Q20j), and by connecting the series-connected resistor and capacitor between the source of the mosFET(Q20j) and the gate of the mosFET(Q10i), This high-voltage amplifier is characterized by a configuration in which a low-impedance source drives a high-impedance gate through a series-connected resistor and capacitor, thereby enabling a fast response. Furthermore, this Claim 13 This relates to the resistors R172, R272, and capacitors C172, C272 in the high-voltage amplifier shown in Figure 4-1, where N is set to 2.

[0028] Claim 14 The present invention relating to this invention is Claim 13 In the high-voltage amplifier described above, N sets of resistors and capacitors with an impedance of 0Ω or greater are provided in series. These are connected in parallel to each of the N resistors (R10i, i=1~N) in the positive output stage, and N sets of resistors and capacitors of 0Ω or more connected in series are further provided. These are connected in parallel to each of the N resistors (R20j, j=1~N) in the negative output stage. This high-voltage amplifier is characterized by its configuration that prevents oscillation and provides a stable, high-speed response. Furthermore, this claim 14 relates to the resistors R181, R182, R281, R282 and the capacitors C161, C162, C261, C262 in the high-voltage amplifier shown in Figure 4-1, where N is 2. [Effects of the Invention]

[0029] Claims 1 and 2 According to the invention, Conventional single high-voltage MOSFET The gate input capacitance is large. The Miller effect, which is proportional to the voltage change between the drain and source, has a significant impact. No current limiting protection These shortcomings are solved by using a high-voltage composite MOSFET. By reducing the gate input capacitance to, for example, about 1 / 100, The Miller effect is suppressed by reducing its influence on voltage changes between the drain and source. For example, it can be reduced to about 1 / 1000. Maintaining the voltage rating of a single high-voltage MOSFET, It has a function to limit the current below the allowable current, thus protecting the element. These effects can be obtained. Regarding the current limiting of the MOSFET, there is no delay between detecting the limiting current and the function activating, so the current is always limited to below the current determined by the current limiting resistor, ensuring reliable protection of the MOSFET. still, Claim 1 This relates to the high-voltage composite n-channel MOSFET shown in Figure 3-1A. Claim 2 This relates to the high-voltage composite p-channel MOSFET shown in Figure 3-2A.

[0030] Claims 3 to 4 According to the invention, Conventional single high-voltage MOSFET The source input impedance is high. The Miller effect, which is proportional to the voltage change between the drain and source, has a significant impact. No current limiting protection These shortcomings are solved by using a high-voltage composite MOSFET. By reducing the source input impedance to, for example, about 1 / 100, The Miller effect is suppressed by reducing its influence on voltage changes between the drain and source. For example, it can be reduced to about 1 / 1000. Maintaining the voltage rating of a single high-voltage MOSFET, It has a function to limit the current below the allowable current, thus protecting the element. These effects can be obtained. Regarding the current limiting of the MOSFET, there is no delay between detecting the limiting current and the function activating, so the current is always limited to below the current determined by the current limiting resistor, ensuring reliable protection of the MOSFET. still, Claim 3 This relates to the high-voltage composite n-channel MOSFET shown in Figure 3-1B. Claim 4 This relates to the high-voltage composite p-channel MOSFET shown in Figure 3-2B.

[0031] Claims 5 to 8 According to the invention, This provides the effect of enabling high-speed response in the operation of the positive and negative output stages of the high-voltage amplifier. In the positive and negative output stages Claims 1 to 4 This is an application of a composite type MOSFET, Claim 5 This relates to a positive output stage circuit using an n-channel MOSFET. Claim 6 This relates to a negative output stage circuit using an n-channel MOSFET. Claim 7 This relates to a positive output stage circuit using a p-channel MOSFET. Claim 8 This relates to a negative output stage circuit using a p-channel MOSFET.

[0032] Claims 9 to 12 According to the invention, In the positive output stage of the high-voltage amplifier section Claim 5A composite n-channel MOSFET, or Claim 7 By applying a composite p-channel MOSFET, In the negative output stage of the high-voltage amplifier section Claim 6 A composite n-channel MOSFET, or Claim 8 By applying a composite p-channel MOSFET, These positive and negative output stages can be arbitrarily selected and combined, resulting in faster response and wider bandwidth for high-voltage amplifiers using high-voltage composite MOSFETs. In the conventional circuit example shown in Figure 1-1, the bandwidth of the high-voltage amplifier could only be achieved up to about several hundred Hz, Claims 9 to 12 In the high-voltage amplifier circuit shown in Figure 2-1 according to the present invention, as shown in Figure 2-2, the response waveform of the ±2kV output to a sine wave input with an amplitude of ±10V and a frequency of 10kHz is a sinusoidal output waveform without oscillation or distortion, demonstrating the effect of maintaining stable amplification function as a high-voltage amplifier even with a sine wave of 10kHz. Furthermore, as shown in Figure 2-3, the frequency characteristics of the output of the high-voltage amplifier Figure 2-1 are more than two orders of magnitude wider than the bandwidth of conventional high-voltage amplifiers, making it possible to achieve a bandwidth of, for example, up to about 100kHz. Furthermore, the reduction of power loss associated with wider bandwidth is important, and it also has the added benefit of enabling miniaturization of components.

[0033] Claims 13 to 14 According to the invention, Even with a high-voltage amplifier using a single high-voltage MOSFET, the effect of fast response and wide bandwidth can be obtained. In the conventional circuit example shown in Figure 1-1, the bandwidth of the high-voltage amplifier could only be achieved up to several hundred Hz, whereas the high-voltage amplifier using a single MOSFET (Figure 1-1)... Claims 13 to 14 In the circuit shown in Figure 4-1, to which this method is applied, as shown in Figure 4-2, a ±2kV output response waveform is obtained for a sine wave input with an amplitude of ±10V and a frequency of 1kHz. This results in a sine wave output waveform that does not oscillate and is free from distortion, demonstrating that the amplifier maintains a stable amplification function as a high-voltage amplifier even with a 1kHz sine wave. [Brief explanation of the drawing]

[0034] [Figure 1-1] This figure shows a basic circuit example for a high-voltage amplifier. [Figure 1-2] This figure shows the response waveform of the high-voltage amplifier Figure 1-1 when a 100Hz, ±10V sine wave input (±2kV output) is applied. [Figure 1-3] This figure shows the response waveform of the high-voltage amplifier (Figure 1-1) when a 1kHz, ±10V sine wave input (±2kV output) is used. [Figure 2-1] This figure shows a circuit diagram of a high-voltage amplifier according to one embodiment of the present invention. [Figure 2-2] This figure shows the response waveform of the high-voltage amplifier (Figure 2-1) when a 10kHz, ±10V sine wave input (±2kV output) is used. [Figure 2-3] This figure shows the frequency characteristics of the output of the high-voltage amplifier Figure 2-1. [Figure 3-1A] This figure shows an example circuit of a high-voltage composite n-channel MOSFET that effectively reduces the gate input capacitance of a single high-voltage n-channel MOSFET and eliminates the Miller effect. [Figure 3-1B] This figure shows an example circuit of a high-voltage composite n-channel MOSFET that effectively reduces the source input impedance of a single high-voltage n-channel MOSFET and eliminates the Miller effect. [Figure 3-2A] This figure shows an example circuit of a high-voltage composite p-channel MOSFET that effectively reduces the gate input capacitance of a single high-voltage p-channel MOSFET and eliminates the Miller effect. [Figure 3-2B] This figure shows an example circuit of a high-voltage composite p-channel MOSFET that effectively reduces the source input impedance of a single high-voltage p-channel MOSFET and eliminates the Miller effect. [Figure 4-1] Figure 1-1 shows a high-voltage amplifier circuit in which the source of one high-voltage MOSFET Q102 and Q202 are driven by the gate of the other via capacitors C172 and C272. [Figure 4-2]This figure shows the response waveform of the high-voltage amplifier (Figure 4-1) when a 1kHz, ±10V sine wave input (±2kV output) is used. [Figure 5-1] This circuit diagram illustrates oscillation in a circuit where the capacitors C162, C161, C262, C261 and resistors R182, R181, R282, and R281 used to prevent oscillation in Figure 2-1 have been removed. [Figure 5-2] This figure 5-1 shows the response waveform of the high-voltage amplifier when a 1kHz, ±10V sine wave input (±2kV output) is used. [Figure 6] This is a high-voltage amplifier circuit that achieves a high voltage output of ±3kV by using high-voltage n-channel MOSFETs Q103, Q102, Q101, Q203, Q202, and Q201, with both the positive and negative output stages connected in series in a 3-stage configuration. The circuit diagram shows a circuit where a composite n-channel MOSFET is applied to these high-voltage MOSFETs. [Figure 7-1] This diagram shows a high-voltage amplifier circuit with ±2kV output, consisting of high-voltage MOSFETs Q102, Q101, Q202, and Q201 connected in series in both the positive and negative output stages. The positive output stage's high-voltage MOSFETs Q102 and Q101 are composite n-channel MOSFETs, and the negative output stage's high-voltage MOSFETs Q202 and Q201 are composite p-channel MOSFETs. [Figure 7-2] This diagram shows a high-voltage amplifier circuit with ±2kV output, consisting of high-voltage MOSFETs Q102, Q101, Q202, and Q201 connected in series in both the positive and negative output stages. The positive output stage's high-voltage MOSFETs Q102 and Q101 are composite p-channel MOSFETs, and the negative output stage's high-voltage MOSFETs Q202 and Q201 are composite n-channel MOSFETs. [Figure 7-3] This diagram shows a high-voltage amplifier circuit with ±2kV output, consisting of high-voltage MOSFETs Q102, Q101, Q202, and Q201 connected in series in both the positive and negative output stages. The diagram also shows a circuit where all of the high-voltage MOSFETs Q102, Q101, Q202, and Q201 in both the positive and negative output stages are composite p-channel MOSFETs. [Modes for carrying out the invention]

[0035] Embodiments of the present invention will be described below with reference to the accompanying drawings. In the following explanation, the circuit elements described in the conventional circuit diagram shown in Figure 1-1 will be given the same reference numerals, and their descriptions will be omitted. First, Figure 2-1 shows the composite MOSFET according to the present invention and the circuit of a high-voltage amplifier that applies it to the output stage circuit. Figure 2-2 shows the response waveform of Figure 2-1 when a 10kHz, ±10V sine wave input (±2kV output) is input. Figure 2-3 shows the frequency characteristics of the output of Figure 2-1. Furthermore, Figure 3-1A shows an example circuit of a high-voltage composite n-channel MOSFET that effectively reduces the gate input capacitance of a single high-voltage n-channel MOSFET and eliminates the Miller effect. Figure 3-1B shows an example circuit of a high-voltage composite n-channel MOSFET that effectively reduces the source input impedance of a single high-voltage n-channel MOSFET and eliminates the Miller effect. Furthermore, Figure 2-1 is Claim 12 This corresponds to the above. In Figure 2-1, the upper half shows the positive output stage circuit A1, and the lower half shows the negative output stage circuit A2. Also, the symbol B1 represents the composite MOSFET in Figure 3-1A, and the symbol B2 represents the composite MOSFET in Figure 3-1B. The high-voltage amplifiers of the present invention, shown in Figures 2-1 and 7-1 to 7-3, are high-voltage amplifiers with an amplifier gain of 200 times and an output of ±2kV that solve the aforementioned problems. Similarly, Figure 6 shows a high-voltage amplifier with an amplifier gain of 300 times and an output of ±3kV that solves the aforementioned problems.

[0036] Figure 2-1, which shows a high-voltage amplifier according to one embodiment of the present invention, replaces the individual high-voltage n-channel MOSFETs Q102 and Q202 in Figure 1-1 with the composite n-channel MOSFET described in Figure 3-1A. However, in Figure 2-1, the current limiting resistor R41 shown in Figure 3-1A is set to 0Ω and omitted. Furthermore, Figure 3-1A is Claim 1 This corresponds to the above. The drains of the low-voltage n-channel MOSFETs Q152 and Q252 are connected to the sources of the high-voltage MOSFETs Q102 and Q202, respectively. MOSFETs Q152 and Q252 are low-voltage n-channel MOSFETs, for example, with a voltage of around 20V to 50V, and are selected for their small gate input capacitance. Low-voltage MOSFETs Q152 and Q252, even with the same current handling capacity as high-voltage MOSFETs Q102 and Q202, can have gate input capacitances that are, for example, about 1 / 100th of those of MOSFETs Q102 and Q202. The voltage between the gate of MOSFET Q102 and the source of MOSFET Q152, and between the gate of MOSFET Q202 and the source of MOSFET Q252, is maintained at a constant voltage of approximately 10V, generated by the Zener diodes Z152 and Z252 and capacitors C152 and C252, respectively, due to the current flowing through resistors R152 and R252. MOSFETs Q152 and Q252 operate at a low voltage of only a few volts between their drain and source, and the voltage change between the drain and gate is very small. As a result, the adverse effects of the Miller effect, which were a problem with MOSFETs Q102 and Q202 in Figure 1-1, are almost completely eliminated, and the response performance is hardly degraded even with high resistance values ​​of 5MΩ for resistors R102, R101, R202, and R201. In other words, the composite n-channel MOSFET shown in Figure 3-1A can effectively reduce the gate input capacitance of a single n-channel MOSFET and eliminate the Miller effect. Since the gates of MOSFETs Q102 and Q202 are kept at low impedance, and their sources are driven by MOSFETs Q152 and Q252, the high-voltage MOSFETs Q102 and Q202 can achieve fast response even with large changes in the voltage between the drain and source. Resistors R162 and R262 are for oscillation prevention, for example, with a resistance of around 0 to 1 kΩ, and are inserted between the gates of MOSFETs Q102 and Q202 and Zener diodes Z152 and Z252, respectively. However, the voltage drop across these resistors is negligible, so the Zener voltage can be considered to be the gate voltage. Maintaining a constant voltage between the gate of MOSFET Q102 and the source of MOSFET Q152, and between the gate of MOSFET Q202 and the source of MOSFET Q252, can also be done by other methods, such as using an isolated DC / DC power supply. Unlike a push-pull circuit using a low-voltage p-channel MOSFET and an n-channel MOSFET to drive the gate of a high-voltage MOSFET, this design avoids a state where both are inactive at the moment of switching, thus enabling stable operation.

[0037] Furthermore, Figure 2-2 shows the response waveform of the ±2kV output to a sine wave input with an amplitude of ±10V and a frequency of 10kHz in the circuit of Figure 2-1. A distortion-free sine wave output waveform is obtained, demonstrating that the amplification function as a high-voltage amplifier can be maintained even with a sine wave of 10kHz frequency. The gate potential waveform VQ152-G of MOSFET Q152, which is evenly voltage-divided between the positive high-voltage power supply and the output terminal by high-resistance R102 and R101, and the gate potential waveform VQ252-G of MOSFET Q252, which is evenly voltage-divided between the output terminal and the negative high-voltage power supply by high-resistance R202 and R201, are distortion-free sine waves. As a result, the sources of the high-voltage MOSFETs Q102 and Q202 are driven at high speed by the drains of these low-voltage MOSFETs Q152 and Q252, preventing an imbalance in the voltage distribution of the high-voltage MOSFETs Q102, Q101 and Q202, Q201. Figure 2-3 shows the frequency characteristics of the output of the high-voltage amplifier Figure 2-1, demonstrating that a bandwidth of 100 kHz is secured for the high-voltage amplifier. In other words, it is possible to achieve a bandwidth more than two orders of magnitude wider than conventional circuits, making it possible to realize a high-voltage amplifier bandwidth of, for example, up to around 100kHz. Moreover, it can suppress the increase in power loss associated with wider bandwidth.

[0038] Furthermore, Figure 2-1 replaces the individual high-voltage n-channel MOSFETs Q101 and Q201 in Figure 1-1 with the composite n-channel MOSFETs described in Figure 3-1B. In other words, the MOSFETs Q102, Q101, Q202, and Q201 in Figure 1-1 are replaced with high-voltage composite n-channel MOSFETs, resulting in a ±2kV output high-voltage amplifier (with an amplifier gain of 200 times). Furthermore, Figure 3-1B is Claim 3 This corresponds to the above. The drains of the low-voltage n-channel MOSFETs Q151 and Q251 are connected to the sources of the high-voltage MOSFETs Q101 and Q201, respectively, via current-limiting resistors R141 and R241. MOSFETs Q151 and Q251 are low-voltage n-channel MOSFETs, for example, with a voltage of around 20V to 50V, and are selected for their small source input impedance. Even with the same current rating as the high-voltage MOSFETs Q101 and Q201, the source input impedance of the low-voltage MOSFETs Q151 and Q251 can be reduced to, for example, about 1 / 100th of that of the high-voltage MOSFETs Q101 and Q201. This is extremely important for maximizing the response performance of the photocouplers U101 and U201 that drive the sources of MOSFETs Q151 and Q251. In other words, the composite n-channel MOSFET shown in Figure 3-1B can effectively reduce the source input impedance of a single n-channel MOSFET and eliminate the Miller effect. In Figure 1-1, current limiting resistors R141 and R241 are placed between photocoupler U101 and MOSFET Q101, and between photocoupler U201 and MOSFET Q201 to protect the circuit. However, in Figure 2-1, these current limiting resistors can be moved between MOSFET Q101 and MOSFET Q151, and between MOSFET Q201 and MOSFET Q251. As a result, photocoupler U101 and MOSFET Q151, and photocoupler U201 and MOSFET Q251 can be directly connected, further improving the response performance of the photocouplers. The voltage between the gates of MOSFET Q101 and MOSFET Q151, and between the gates of MOSFET Q201 and MOSFET Q251, is maintained at a constant voltage of approximately 10V, generated by the Zener diodes Z151 and Z251 and capacitors C151 and C251, respectively, due to the current flowing through resistors R151 and R251. Since the sources of MOSFET Q101 and Q201 are driven by MOSFET Q151 and Q251, the high-voltage MOSFETs Q101 and Q201 can achieve fast response even with large changes in the voltage between the drain and source. Resistors R161 and R261 are for oscillation prevention, for example, with a resistance of around 0 to 1 kΩ, and are inserted between the gates of MOSFETs Q101 and Q201 and Zener diodes Z151 and Z251, respectively. However, the voltage drop across these resistors is negligible, so the Zener voltage can be considered to be the gate voltage. Furthermore, maintaining a constant voltage between the gates of MOSFET Q101 and MOSFET Q151, and between the gates of MOSFET Q201 and MOSFET Q251, can also be done by other methods, such as using an isolated DC / DC power supply.

[0039] In the positive and negative output stages of the high-voltage amplifier section In the case of a single high-voltage MOSFET configured as shown in Figure 1-1, which has n channels, it is replaced with a composite n-channel MOSFET as shown in Figures 3-1A and 3-1B, as shown in Figure 2-1. If the individual high-voltage MOSFETs used are p-channel, the output stage can be made high-performance in exactly the same way as with n-channel MOSFETs by using the composite p-channel MOSFETs shown in Figures 3-2A and 3-2B, as shown in Figures 7-1 to 7-3. The composite p-channel MOSFET in Figure 3-2A has a structure corresponding to the composite n-channel MOSFET in Figure 3-1A, and the composite p-channel MOSFET in Figure 3-2B has a structure corresponding to the composite n-channel MOSFET in Figure 3-1B. The composite MOSFET shown in Figure 3-2A can effectively reduce the gate input capacitance of a single MOSFET and eliminate the Miller effect. Also, Figure 3-2A is Claim 2This corresponds to the above. The composite MOSFET shown in Figure 3-2B can effectively reduce the source input impedance of a single MOSFET and eliminate the Miller effect. Also, Figure 3-2B is Claim 4 This corresponds to the above.

[0040] In one embodiment of the present invention, the high-voltage amplifier circuit shown in Figure 2-1 can maintain a nearly constant potential difference between the source of MOSFET Q152 and the gate of MOSFET Q252, even if the output voltage changes in response to the input voltage, as a property of the circuit, when operating in the low-frequency range. Therefore, focusing on this point, the low-impedance source of the MOSFET Q152 drives the high-impedance gate of the MOSFET Q252 via a series-connected protective resistor R272 and capacitor C272, so that a similar state can be maintained even at high frequencies. Similarly, if the high-voltage amplifier in Figure 2-1 is in the low-frequency range, even if the output voltage changes in response to the input voltage, the potential difference between the source of MOSFET Q252 and the gate of MOSFET Q152 remains almost constant due to the properties of the circuit. Therefore, focusing on this point, the low-impedance source of the MOSFET Q252 drives the high-impedance gate of the MOSFET Q152 via a series-connected protective resistor R172 and capacitor C172, so that a similar state can be maintained even at high frequencies. These capacitors C172 and C272 function effectively even with a capacitance of around 1000pF, and in the high-frequency range, the current driving the gates of the MOSFETs Q152 and Q252 from the high resistance of resistors R102, R101, R202, and R201 (5MΩ) can be significantly reduced. This makes it possible to use even larger resistance values, thereby reducing power loss due to these resistors. Furthermore, this method of driving the gate with a capacitor can also be applied to a single MOSFET. In the case of Figure 1-1, this can be achieved by configuring a circuit with a combination of MOSFETs Q102 and Q202 such that the source of one drives the gate of the other via a capacitor. Figure 4-1 shows the high-voltage MOSFETs Q102 and Q202 from Figure 1-1, but configured such that the source of one MOSFET drives the gate of the other via a series connection of resistor R172 and capacitor C172, and resistor R272 and capacitor C272. Figure 4-2 shows the response waveform of the circuit in Figure 4-1, with a ±10V amplitude and a 1kHz frequency sine wave input, and a ±2kV output. A distortion-free sine wave output waveform is obtained, demonstrating that the amplification function as a high-voltage amplifier can be maintained even with a 1kHz frequency sine wave.

[0041] Returning to Figure 2-1, the high-voltage amplifier shown in Figure 2-1 according to one aspect of the present invention is A series-connected capacitor C162 and protective resistor R182 are connected in parallel to a high-resistance resistor R102, a series-connected capacitor C161 and protective resistor R181 are connected in parallel to a high-resistance resistor R101, a series-connected capacitor C262 and protective resistor R282 are connected in parallel to a high-resistance resistor R202, and a series-connected capacitor C261 and protective resistor R281 are connected in parallel to a high-resistance resistor R201. These capacitors are used to prevent oscillation and have a small capacitance, such as a few pF. As shown in Figure 5-1, if capacitors C162, C161, C262, C261 and resistors R182, R181, R282, R281 are removed from Figure 2-1, the response waveform will oscillate, as shown in Figure 5-2. The amplitude of this oscillation is larger for the gate waveforms of MOSFET Q152 (VQ152-G) and MOSFET Q252 (VQ252-G) than for the output waveform, so it is considered to be a local oscillation around MOSFETs Q152 and Q252. In Figure 2-1, capacitors C162, C161, C262, and C261 not only prevent this local oscillation, but also suppress the increase in the amount of feedback under no load conditions in the negative feedback loop path to the operational amplifier U1 that constitutes the high-voltage amplifier, thereby preventing the amplifier output from oscillating. Therefore, similarly, in the circuit of Figure 1-1, oscillation under no load conditions can be prevented by connecting the series-connected resistors and capacitors in parallel to the high resistors R102, R101, R202, and R201. Furthermore, since capacitors C162 and C161 are connected in series, and capacitors C262 and C261 are connected in series to the output terminal, the voltage applied to these capacitors is divided in two, thus reducing the capacitive load at the output by half.

[0042] Incidentally, Figure 2-1 shows an example circuit of a high-voltage amplifier using high-voltage composite n-channel MOSFETs connected in series in two stages between the high-voltage power supply and the output terminals for both the positive and negative output stages. However, in another aspect of the present invention, the voltage output can be further increased by increasing the number of series-connected stages of the composite MOSFETs, as shown in Figure 6. Furthermore, Figure 6 is Claim 12 It is related to this. Figure 6 shows an example circuit of a high-voltage amplifier using high-voltage composite n-channel MOSFETs connected in series in three stages between the high-voltage power supply and the output terminals for both the positive and negative output stages. This high-voltage amplifier has an amplifier gain of 300 times and an output of ±3kV. Specifically, it is a high-voltage amplifier circuit with a configuration of high-voltage n-channel MOSFETs Q103, Q102, Q101, Q203, Q202, and Q201 connected in series in both the positive and negative output stages, resulting in a high-voltage output of ±3kV. This circuit example provides a ±3kV output, but there is no limit to the number of series-connected stages, so it is possible to increase the number of series-connected stages to achieve an even higher voltage output.

[0043] Furthermore, Figure 7-1 shows a high-voltage amplifier according to another embodiment of the present invention. In the high-voltage amplification section The positive output stage between the positive high-voltage power supply and the output terminal is constructed using two series-connected high-voltage n-channel MOSFETs Q102 and Q101. The negative output stage between the negative high-voltage power supply and the output terminal is configured with two high-voltage p-channel MOSFETs Q202 and Q201 connected in series. The n-channel MOSFET Q102 has the high-voltage composite n-channel MOSFET structure shown in Figure 3-1A. The n-channel MOSFET Q101 has the high-voltage composite n-channel MOSFET structure shown in Figure 3-1B. The p-channel MOSFET Q202 has the high-voltage composite p-channel MOSFET structure shown in Figure 3-2A. The p-channel MOSFET Q201 has the high-voltage composite p-channel MOSFET structure shown in Figure 3-2B. That is what happened. In other words, it is a high-voltage amplifier circuit with ±2kV output, using high-voltage MOSFETs Q102, Q101, Q202, and Q201 connected in series in both the positive and negative output stages. The high-voltage MOSFETs Q102 and Q101 in the positive output stage are combined into a composite n-channel MOSFET. The high-voltage MOSFETs Q202 and Q201 in the negative output stage are combined into a p-channel MOSFET. The constructed circuit is shown. Furthermore, there is no limit to the number of series-connected stages, so it is possible to increase the number of series-connected stages, replace the increased high-voltage MOSFETs with composite MOSFETs of the same channel, and further increase the voltage output. Also, Figure 7-1 Claim 12 It is related to this.

[0044] Furthermore, Figure 7-2, which shows a high-voltage amplifier according to another embodiment of the present invention, In the high-voltage amplification section The positive output stage between the positive high-voltage power supply and the output terminal is constructed using two series-connected high-voltage p-channel MOSFETs Q102 and Q101. The negative output stage between the negative high-voltage power supply and the output terminal is configured with two high-voltage n-channel MOSFETs Q202 and Q201 connected in series. The p-channel MOSFET Q102 has the high-voltage composite p-channel MOSFET structure shown in Figure 3-2A. The p-channel MOSFET Q101 has the high-voltage composite p-channel MOSFET structure shown in Figure 3-2B. The n-channel MOSFET Q202 has the high-voltage composite n-channel MOSFET structure shown in Figure 3-1A. The n-channel MOSFET Q201 has the high-voltage composite n-channel MOSFET structure shown in Figure 3-1B. That is what happened. In other words, it is a high-voltage amplifier circuit with ±2kV output, using high-voltage MOSFETs Q102, Q101, Q202, and Q201 connected in series in both the positive and negative output stages. The high-voltage MOSFETs Q102 and Q101 in the positive output stage are combined into a p-channel MOSFET. The high-voltage MOSFETs Q202 and Q201 in the negative output stage are combined into a composite n-channel MOSFET. The constructed circuit is shown. Furthermore, there is no limit to the number of series-connected stages, so it is possible to increase the number of series-connected stages, replace the increased high-voltage MOSFETs with composite MOSFETs of the same channel, and further increase the voltage output. Also, Figure 7-2 Claim 12 It is related to this.

[0045] Furthermore, Figure 7-3, which shows a high-voltage amplifier according to another embodiment of the present invention, In the high-voltage amplification section The positive output stage between the positive high-voltage power supply and the output terminal is constructed using two series-connected high-voltage p-channel MOSFETs Q102 and Q101. The negative output stage between the negative high-voltage power supply and the output terminal is configured with two high-voltage p-channel MOSFETs Q202 and Q201 connected in series. The p-channel MOSFETs Q102 and Q202 have the high-voltage composite p-channel MOSFET structure shown in Figure 3-2A. The p-channel MOSFETs Q101 and Q201 have the high-voltage composite p-channel MOSFET structure shown in Figure 3-2B. That is what happened. In other words, it is a high-voltage amplifier circuit with ±2kV output, using high-voltage MOSFETs Q102, Q101, Q202, and Q201 connected in series in both the positive and negative output stages. This diagram shows a circuit where the high-voltage MOSFETs Q102, Q101, Q202, and Q201 in the positive and negative output stages are all composed of composite p-channel MOSFETs. Also, Figure 7-3 Claim 12 It is related to this. Furthermore, in each of the above embodiments, there is no limit to the number of series-connected stages, so it is possible to increase the number of series-connected stages, replace the increased high-voltage MOSFETs with composite MOSFETs of the same channel, and further increase the voltage output. Furthermore, the reference numerals assigned to each component in the claims are solely for the purpose of facilitating understanding of the present invention and do not limit the configuration in any way.

[0046] In the case of a high-voltage amplifier with a unipolar output, such as one with an output voltage range of 0V to +2kV or -2kV to 0V, a high-voltage power supply can be provided only for the output stage of the high-voltage amplification section for that output polarity, while a low-voltage power supply can be used instead of a high-voltage power supply for the output stage of the other polarity. This allows a unipolar high-voltage amplifier to be realized with the same circuit configuration as a high-voltage amplifier with bipolar output. In other words, it is not always necessary to have separate positive and negative high-voltage power supplies for the output stage of a high-voltage amplifier; sometimes the low-voltage power supply used in the low-voltage amplifier is repurposed for the high-voltage amplifier. Furthermore, if, for example, the circuit shown in Figure 2-1, which is capable of outputting -2kV to +2kV, is applied to a unipolar output high-voltage amplifier, it becomes a high-voltage amplifier capable of outputting up to 0V to +4kV, or up to -4kV to 0V. [Explanation of Symbols]

[0047] Q1 High voltage MOSFET Q51 Low gate input capacitance or low source input impedance, low voltage MOSFET. Q1 and Q51 have similar drain current capacities. Z51 Zener diode, for constant voltage generation. R51 high resistance R31, R41, R61 are resistors, including 0Ω. C51 Capacitor, for voltage stabilization. Drain of a D-type composite MOSFET Source of S-type MOSFET G gate of a composite MOSFET A1 Positive output stage circuit of the high-voltage amplifier section A2 Negative output stage circuit of the high-voltage amplifier section B1 Composite mosFET B2 Composite mosFET R1~R7 resistance C1~C2 Capacitors D1~D2 Diodes U1 Operational Amplifier +15V +15V Low Voltage Positive Power Supply -15V -15V Low Voltage Negative Power Supply U101, U201 Photocoupler Q101~Q103, Q201~Q203 High-voltage MOSFETs Z101, Z201 Zener diodes, for constant voltage generation. R101~R103, R201~R203 High Resistance C101, C201 Capacitors, for voltage stabilization Q151, Q251 Low source input impedance, low voltage MOSFET Q152, Q153, Q252, Q253 Low gate input capacitance, low voltage MOSFET Z151~Z153, Z251~Z253 Zener diodes, for constant voltage generation. R131, R141, R231, R241 are resistors, protective, and include 0Ω. R151~R153, R251~R253 High resistance R161~R163, R172, R173, R181~R183: Resistors, protective, including 0Ω. R261~R263, R272, R273, R281~R283: Resistors, protective, including 0Ω. C151~C153, C251~C253 Capacitors, for voltage stabilization. C161~C163, C261~C263 Capacitors, for oscillation prevention C172, C173, C272, C273 Capacitors, for gate drive. +2100V +2100V High-Voltage Positive Power Supply -2100V -2100V High-Voltage Negative Power Supply +3100V +3100V High Voltage Positive Power Supply -3100V -3100V High-Voltage Negative Power Supply +HVps positive high voltage power supply -HVps Negative High Voltage Power Supply Gate potential of VQ102-G MOSFET Q102 Gate potential of VQ202-G MOSFET Q202 Gate potential of the VQ152-G MOSFET Q152 Gate potential of VQ252-G MOSFET Q252

Claims

1. A second low-voltage MOSFET (Q51) having the same channel drain, gate, and source as the first high-voltage MOSFET (Q1) having drain, gate, and source is added to the first high-voltage MOSFET (Q1) having drain, gate, and source. One end of a resistor (R41) with an impedance of 0Ω or more is connected to the source of the first MOSFET (Q1), and the other end of the resistor (R41) is connected to the drain of an additional second MOSFET (Q51). The first terminal of a resistor (R61) with an impedance of 0Ω or more is connected to the gate of the first MOSFET (Q1). The system has a constant voltage circuit, the first terminal of the constant voltage terminal of the constant voltage circuit is connected to the second terminal of the resistor (R61), and the second terminal of the constant voltage terminal of the constant voltage circuit is connected to the source of the second mosFET (Q51). The gate of the second MOSFET (Q51) acts as the gate of a composite MOSFET. The source of the second MOSFET (Q51) is used as the source of the composite MOSFET. The drain of the first MOSFET (Q1) is used as the drain of the composite MOSFET. In a composite MOSFET configured to function, The constant voltage circuit includes a resistor (R51), a Zener diode (Z51), and a capacitor (C51). The first terminal of the resistor (R51) is connected to the drain of the first mosFET (Q1), or to the positive power supply, or to the drain of another mosFET located on the higher potential side; one end of the Zener diode (Z51) and capacitor (C51), which are connected in parallel to generate a constant voltage with the current flowing through the resistor (R51), is connected to the second terminal of the resistor (R51), and is also connected to the second terminal of the resistor (R61); and the other end of the parallel-connected Zener diode (Z51) and capacitor (C51) is connected to the source of the second mosFET (Q51). The anode, which is one end of the Zener diode (Z51), is connected to the source side of the second mosFET (Q51). By applying a high-voltage n-channel MOSFET as the first MOSFET (Q1) and a low-voltage n-channel MOSFET with a low gate input capacitance and a current tolerance similar to that of the first MOSFET (Q1) or greater than the current limited by the resistor (R41) as the second MOSFET (Q51), In this case, the composite MOSFET operates as an n-channel MOSFET. The gate input capacitance is smaller than that of the first MOSFET (Q1). Because the voltage change between the drain and gate of the second MOSFET (Q51) is small, the Miller effect is suppressed. Maintaining the high voltage rating of the first MOSFET (Q1), The resistor (R41) provides overcurrent protection to the first and second MOSFETs (Q1, Q51) to keep the current below the allowable level. A high-voltage composite n-channel MOSFET characterized by being configured in such a way.

2. A second low-voltage MOSFET (Q51) having the same channel drain, gate, and source as the first high-voltage MOSFET (Q1) having drain, gate, and source is added to the first high-voltage MOSFET (Q1) having drain, gate, and source. One end of a resistor (R41) with an impedance of 0Ω or more is connected to the source of the first MOSFET (Q1), and the other end of the resistor (R41) is connected to the drain of an additional second MOSFET (Q51). The first terminal of a resistor (R61) with an impedance of 0Ω or more is connected to the gate of the first MOSFET (Q1). The system has a constant voltage circuit, the first terminal of the constant voltage terminal of the constant voltage circuit is connected to the second terminal of the resistor (R61), and the second terminal of the constant voltage terminal of the constant voltage circuit is connected to the source of the second mosFET (Q51). The gate of the second MOSFET (Q51) acts as the gate of a composite MOSFET. The source of the second MOSFET (Q51) is used as the source of the composite MOSFET. The drain of the first MOSFET (Q1) is used as the drain of the composite MOSFET. In a composite MOSFET configured to function, The constant voltage circuit includes a resistor (R51), a Zener diode (Z51), and a capacitor (C51). The first terminal of the resistor (R51) is connected to the drain of the first mosFET (Q1), or to the negative power supply, or to the drain of another mosFET located on the lower potential side; one end of the Zener diode (Z51) and capacitor (C51), which are connected in parallel to generate a constant voltage with the current flowing through the resistor (R51), is connected to the second terminal of the resistor (R51), and is also connected to the second terminal of the resistor (R61); and the other end of the parallel-connected Zener diode (Z51) and capacitor (C51) is connected to the source of the second mosFET (Q51). The cathode of the Zener diode (Z51) is connected to the source side of the second mosFET (Q51). By applying a high-voltage p-channel MOSFET as the first MOSFET (Q1) and a low-voltage p-channel MOSFET with a low gate input capacitance and a current tolerance similar to that of the first MOSFET (Q1) or greater than the current limited by the resistor (R41) as the second MOSFET (Q51), In this case, the composite MOSFET operates as a p-channel MOSFET. The gate input capacitance is smaller than that of the first MOSFET (Q1). Because the voltage change between the drain and gate of the second MOSFET (Q51) is small, the Miller effect is suppressed. Maintaining the high voltage rating of the first MOSFET (Q1), The resistor (R41) provides overcurrent protection to the first and second MOSFETs (Q1, Q51) to keep the current below the allowable level. A high-voltage composite p-channel MOSFET characterized by being configured in such a way.

3. A second low breakdown voltage mosFET (Q51) having a drain, gate, and source of the same channel as the first high breakdown voltage mosFET (Q1) is added to the first high breakdown voltage mosFET (Q1) having a drain, gate, and source, One end of a resistor (R41) with an impedance of 0Ω or more is connected to the source of the first MOSFET (Q1), and the other end of the resistor (R41) is connected to the drain of an additional second MOSFET (Q51). The first terminal of a resistor (R61) with an impedance of 0Ω or more is connected to the gate of the first MOSFET (Q1). The constant voltage circuit is connected to the second terminal of the resistor (R61), the second terminal of the constant voltage circuit is connected to the first terminal of a resistor (R31) of 0Ω or more, the second terminal of the resistor (R31) is connected to the gate of a second mosFET (Q51), and the first terminal of the resistor (R31) connected to the gate of the second mosFET (Q51) is As the gate of a composite MOSFET, The source of the second MOSFET (Q51) is used as the source of the composite MOSFET. The drain of the first MOSFET (Q1) is used as the drain of the composite MOSFET. In a composite MOSFET configured to function, The constant voltage circuit includes a resistor (R51), a Zener diode (Z51), and a capacitor (C51). The first terminal of the resistor (R51) is connected to the drain of the first mosFET (Q1), or to the positive power supply, or to the drain of another mosFET located on the higher potential side; one end of the Zener diode (Z51) and capacitor (C51), which are connected in parallel to generate a constant voltage with the current flowing through the resistor (R51), is connected to the second terminal of the resistor (R51), and is also connected to the second terminal of the resistor (R61); and the other end of the parallel-connected Zener diode (Z51) and capacitor (C51) is connected to the first terminal of the resistor (R31). The anode, which is one end of the Zener diode (Z51), is connected to the first terminal of the resistor (R31) in the following direction: By applying a high-voltage n-channel MOSFET to the first MOSFET (Q1) and a low-voltage n-channel MOSFET with low source input impedance and a current tolerance similar to that of the first MOSFET (Q1) or greater than the current limited by the resistor (R41) to the second MOSFET (Q51), In this case, the composite MOSFET operates as an n-channel MOSFET. The source input impedance is smaller than that of the first MOSFET (Q1). Because the voltage change between the drain and gate of the second MOSFET (Q51) is small, the Miller effect is suppressed. Maintaining the high voltage rating of the first MOSFET (Q1), The resistor (R41) provides overcurrent protection to the first and second MOSFETs (Q1, Q51) to keep the current below the allowable level. A high-voltage composite n-channel MOSFET characterized by being configured in such a way.

4. A second low-voltage MOSFET (Q51) having the same channel drain, gate, and source as the first high-voltage MOSFET (Q1) having drain, gate, and source is added to the first high-voltage MOSFET (Q1) having drain, gate, and source. One end of a resistor (R41) with an impedance of 0Ω or more is connected to the source of the first MOSFET (Q1), and the other end of the resistor (R41) is connected to the drain of an additional second MOSFET (Q51). The first terminal of a resistor (R61) with an impedance of 0Ω or more is connected to the gate of the first MOSFET (Q1). The constant voltage circuit is connected to the second terminal of the resistor (R61), the second terminal of the constant voltage circuit is connected to the first terminal of a resistor (R31) of 0Ω or more, the second terminal of the resistor (R31) is connected to the gate of a second mosFET (Q51), and the first terminal of the resistor (R31) connected to the gate of the second mosFET (Q51) is As the gate of a composite MOSFET, The source of the second MOSFET (Q51) is used as the source of the composite MOSFET. The drain of the first MOSFET (Q1) is used as the drain of the composite MOSFET. In a composite MOSFET configured to function, The constant voltage circuit includes a resistor (R51), a Zener diode (Z51), and a capacitor (C51). The first terminal of the resistor (R51) is connected to the drain of the first mosFET (Q1), or to the negative power supply, or to the drain of another mosFET located on the lower potential side. One end of the Zener diode (Z51) and capacitor (C51), which are connected in parallel to generate a constant voltage with the current flowing through the resistor (R51), is connected to the second terminal of the resistor (R51), and is also connected to the second terminal of the resistor (R61). The other end of the parallel-connected Zener diode (Z51) and capacitor (C51) is connected to the first terminal of the resistor (R31). The cathode of the Zener diode (Z51) is connected to the first terminal of the resistor (R31) in the following direction: By applying a high-voltage p-channel MOSFET to the first MOSFET (Q1) and a low-voltage p-channel MOSFET with a low source input impedance and a current tolerance similar to that of the first MOSFET (Q1) or greater than the current limited by the resistor (R41) to the second MOSFET (Q51), In this case, the composite MOSFET operates as a p-channel MOSFET. The source input impedance is smaller than that of the first MOSFET (Q1). Because the voltage change between the drain and gate of the second MOSFET (Q51) is small, the Miller effect is suppressed. Maintaining the high voltage rating of the first MOSFET (Q1), The resistor (R41) provides overcurrent protection to the first and second MOSFETs (Q1, Q51) to keep the current below the allowable level. A high-voltage composite p-channel MOSFET characterized by being configured in such a way.

5. In a circuit where the positive output stage circuit consists of a photocoupler (U101) and two or more N stages of n-channel MOSFETs (Q10i, i=1 to N), Let the point with the highest potential in the aforementioned positive output stage circuit be node Hn, and the point with the lowest potential be node Ln. The drain of mosFET (Q10N) is connected to node Hn, the drain of mosFET (Q10i, i=N-1) is connected to its source, the drain of mosFET (Q10i, i=N-2) is connected to its source, and so on, with the mosFETs being connected in series until the drain of the last mosFET (Q101) is connected to the source of mosFET (Q102). To provide a bias voltage to the gate of each MOSFET, N resistors (R10i, i=1 to N) are provided, the first terminal of resistor (R10N) is connected to node Hn, its second terminal is connected to the first terminal of resistor (R10i, i=N-1), and so on, with the resistors connected in series until the first terminal of the last resistor (R101) is connected to the second terminal of resistor (R102). It has a constant voltage circuit, The second terminal of the resistor (R101) is connected to the positive side of the constant voltage terminal of the constant voltage circuit. The negative side of the constant voltage terminal of the constant voltage circuit is connected to node Ln. The second terminal of the resistor (R10N) is connected to the gate of the mosFET (Q10N), The second terminal of the resistor (R10i, i=N-1) is connected to the gate of the mosFET (Q10i, i=N-1), and so on, until the second terminal of the resistor (R10i) is connected to the gate of the mosFET (Q10i), and finally the second terminal of the resistor (R101) is connected to the gate of the mosFET (Q101), thereby applying a predetermined bias voltage to the gates of each of the mosFETs (Q10i, i=1 to N). The source of the mosFET (Q101) is connected to the collector of the photocoupler (U101) via a resistor of 0Ω or more, and its emitter is connected to node Ln. To apply this to the positive output stage, node Hn is connected to the positive power supply, Connect node Ln to the output terminal, To the single mosFET (Q101) By applying a composite n-channel MOSFET combining high-voltage and low-voltage MOSFETs (Q101, Q151) as described in claim 3, A composite n-channel mosFET is applied by combining the high-voltage and low-voltage mosFETs (Q10i, Q15i) of claim 1 with each of the individual mosFETs (Q10i, i=2 to N). The positive output stage is characterized by being configured to have a source current control function that is accelerated by a composite n-channel MOSFET.

6. In a circuit where the negative output stage circuit is composed of a photocoupler (U201) and two or more N stages of n-channel MOSFETs (Q20j, j=1 to N), Let the point with the highest potential in the aforementioned negative output stage circuit be node Hn, and the point with the lowest potential be node Ln. The drain of mosFET (Q20N) is connected to node Hn, the drain of mosFET (Q20j, j=N-1) is connected to its source, the drain of mosFET (Q20j, j=N-2) is connected to its source, and so on, with the mosFETs being connected in series until the drain of the last mosFET (Q201) is connected to the source of mosFET (Q202). To provide a bias voltage to the gate of each mosFET, N resistors (R20j, j=1 to N) are provided, the first terminal of resistor (R20N) is connected to node Hn, its second terminal is connected to the first terminal of resistor (R20j, j=N-1), and so on, with the resistors connected in series until the first terminal of the last resistor (R201) is connected to the second terminal of resistor (R202). It has a constant voltage circuit, The second terminal of the resistor (R201) is connected to the positive side of the constant voltage terminal of the constant voltage circuit. The negative side of the constant voltage terminal of the constant voltage circuit is connected to node Ln. The second terminal of the resistor (R20N) is connected to the gate of the mosFET (Q20N), The second terminal of the resistor (R20j, j=N-1) is connected to the gate of the mosFET (Q20j, j=N-1), and so on, until the second terminal of the resistor (R20j) is connected to the gate of the mosFET (Q20j), and finally the second terminal of the resistor (R201) is connected to the gate of the mosFET (Q201), thereby applying a predetermined bias voltage to the gates of each of the mosFETs (Q20j, j=1 to N). The source of the mosFET (Q201) is connected to the collector of the photocoupler (U201) via a resistor of 0Ω or more, and its emitter is connected to node Ln. To apply this to the negative output stage, node Hn is connected to the output terminal. Connect node Ln to the negative power supply, To the single mosFET (Q201) By applying a composite n-channel MOSFET combining high-voltage and low-voltage MOSFETs (Q201, Q251) as described in claim 3, A composite n-channel mosFET is applied by combining the high-voltage and low-voltage mosFETs (Q20j, Q25j) of claim 1 with each of the individual mosFETs (Q20j, j=2 to N). The negative output stage is characterized by being configured to have a sink current control function that is accelerated by a composite n-channel MOSFET.

7. In a circuit where the positive output stage circuit consists of a photocoupler (U101) and two or more N stages of p-channel MOSFETs (Q10i, i=1 to N), The point with the highest potential in the aforementioned positive output stage circuit is node Hp, and the point with the lowest potential is node Lp. The drain of MOSFET (Q10N) is connected to node Lp, the drain of MOSFET (Q10i, i=N-1) is connected to its source, the drain of MOSFET (Q10i, i=N-2) is connected to its source, and so on, with the MOSFETs being connected in series until the drain of the last MOSFET (Q101) is connected to the source of MOSFET (Q102). To provide a bias voltage to the gate of each MOSFET, N resistors (R10i, i=1 to N) are provided, the first terminal of resistor (R10N) is connected to node Lp, its second terminal is connected to the first terminal of resistor (R10i, i=N-1), and so on, with the resistors connected in series until the first terminal of the last resistor (R101) is connected to the second terminal of resistor (R102). It has a constant voltage circuit, The second terminal of the resistor (R101) is connected to the negative side of the constant voltage terminal of the constant voltage circuit. The positive side of the constant voltage terminal of the constant voltage circuit is connected to node HP. The second terminal of the resistor (R10N) is connected to the gate of the mosFET (Q10N), The second terminal of the resistor (R10i, i=N-1) is connected to the gate of the mosFET (Q10i, i=N-1), and so on, until the second terminal of the resistor (R10i) is connected to the gate of the mosFET (Q10i), and finally the second terminal of the resistor (R101) is connected to the gate of the mosFET (Q101), thereby applying a predetermined bias voltage to the gates of each of the mosFETs (Q10i, i=1 to N). The source of the mosFET (Q101) is connected to the emitter of the photocoupler (U101) via a resistor of 0Ω or more, and its collector is connected to node HP. To apply this to the positive output stage, node HP is connected to the positive power supply. Connect node Lp to the output terminal, A composite p-channel mosFET is applied to the single mosFET (Q101) by combining the high-voltage and low-voltage mosFETs (Q101, Q151) of claim 4. A composite p-channel mosFET is applied, which combines the high-voltage and low-voltage mosFETs (Q10i, Q15i) of claim 2 with each of the individual mosFETs (Q10i, i=2 to N). The positive output stage is characterized by being configured to have a source current control function that is accelerated by a composite p-channel MOSFET.

8. In a circuit where the negative output stage circuit is composed of a photocoupler (U201) and two or more N stages of p-channel MOSFETs (Q20j, j=1 to N), The point with the highest potential in the aforementioned negative output stage circuit is node Hp, and the point with the lowest potential is node Lp. The drain of MOSFET (Q20N) is connected to node Lp, the drain of MOSFET (Q20j, j=N-1) is connected to its source, the drain of MOSFET (Q20j, j=N-2) is connected to its source, and so on, with the MOSFETs being connected in series until the drain of the last MOSFET (Q201) is connected to the source of MOSFET (Q202). To provide a bias voltage to the gate of each MOSFET, N resistors (R20j, j=1 to N) are provided, the first terminal of resistor (R20N) is connected to node Lp, its second terminal is connected to the first terminal of resistor (R20j, j=N-1), and so on, with the resistors connected in series until the first terminal of the last resistor (R201) is connected to the second terminal of resistor (R202). It has a constant voltage circuit, The second terminal of the resistor (R201) is connected to the negative side of the constant voltage terminal of the constant voltage circuit. The positive side of the constant voltage terminal of the constant voltage circuit is connected to node HP. The second terminal of the resistor (R20N) is connected to the gate of the mosFET (Q20N), The second terminal of the resistor (R20j, j=N-1) is connected to the gate of the mosFET (Q20j, j=N-1), and so on, until the second terminal of the resistor (R20j) is connected to the gate of the mosFET (Q20j), and finally the second terminal of the resistor (R201) is connected to the gate of the mosFET (Q201), thereby applying a predetermined bias voltage to the gates of each of the mosFETs (Q20j, j=1 to N). The source of the mosFET (Q201) is connected to the emitter of the photocoupler (U201) via a resistor of 0Ω or more, and its collector is connected to node HP. To apply this to the negative output stage, node HP is connected to the output terminal. Connect node Lp to the negative power supply, A composite p-channel mosFET is applied to the single mosFET (Q201) by combining the high-voltage and low-voltage mosFETs (Q201, Q251) of claim 4. A composite p-channel MOSFET is applied, which combines the high-voltage and low-voltage MOSFETs (Q20j, Q25j) of claim 2 with each of the individual MOSFETs (Q20j, j=2 to N). The negative output stage is characterized by being configured to have a sink current control function that is accelerated by a composite p-channel MOSFET.

9. It has an input stage equipped with a low-voltage amplification section, an output stage equipped with a high-voltage amplification section, and a photocoupler interposed between the input stage and the output stage. The output stage includes a positive output stage connected to a positive power supply that controls the source current, and a negative output stage connected to a negative power supply that controls the sink current. The aforementioned photocoupler also includes a photocoupler (U101) that controls the positive output stage and a photocoupler (U201) that controls the negative output stage. In a high-voltage amplifier that amplifies an input signal in the low-voltage amplification section, introduces the amplified signal to the high-voltage amplification section via the photocouplers (U101, U201), and outputs the amplified signal from the output terminal, The positive output stage is equipped with two or more N MOSFETs (Q10i, i=1 to N), These mosFETs are connected in series in numerical order (Q10N, ..., Q102, Q101), and the source of the mosFET (Q101) is connected to the photocoupler (U101) via a resistor of 0Ω or more, and these series-connected mosFETs (Q10i, i=1 to N) and the photocoupler (U101) are arranged between the positive power supply and the output terminal. The negative output stage is equipped with the same N MOSFETs (Q20j, j=1 to N), These mosFETs are connected in series in numerical order (Q20N, ..., Q202, Q201), and the source of the mosFET (Q201) is connected to the photocoupler (U201) via a resistor of 0Ω or more, and these series-connected mosFETs (Q20j, j=1 to N) and the photocoupler (U201) are arranged between the negative power supply and the output terminal. On the positive output stage side, N resistors (R10i, i=1 to N) and a constant voltage circuit or element (Z101) are provided, and these are connected in series in numerical order (R10N, ..., R102, R101, Z101). The circuit is positioned between the positive power supply and the output terminal to supply bias voltages of predetermined potentials, divided from the positive power supply to the output terminal, to the gates of each mosFET (Q10i, i=1 to N) of the positive output stage. On the negative output stage side, N resistors (R20j, j=1 to N) and a constant voltage circuit or element (Z201) are provided, and these are connected in series in numerical order (R20N, ..., R202, R201, Z201). The circuit is positioned between the negative power supply and the output terminal to supply bias voltages of predetermined potentials, divided from the negative power supply to the output terminal, to the gates of each mosFET (Q20j, j=1 to N) of the negative output stage. In a high-voltage amplifier configured such that the high-voltage amplification section controls the source current at the positive output stage and the sink current at the negative output stage, As the positive output stage of the high-voltage amplifier section, Applying the output stage of claim 5 or claim 7, in which the aforementioned mosFET (Q10i, i=1 to N) is replaced with a composite mosFET combining high-voltage and low-voltage mosFETs (Q10i, Q15i), As the negative output stage of the high-voltage amplifier section, The aforementioned MOSFET (Q20j, j=1 to N) was replaced with a composite MOSFET combining high-voltage and low-voltage MOSFETs (Q20j, Q25j). Apply the output stage of claim 6 or claim 8, A high-voltage amplifier characterized by being configured to achieve high speed and wide bandwidth.

10. In the high-voltage amplifier according to claim 9, the mosFET (Q15i, i=1 to N) which, in combination with the mosFET (Q10i, i=1 to N), constitutes a composite mosFET, and the mosFET (Q25j, j=1 to N) which, in combination with the mosFET (Q20j, j=1 to N), constitutes a composite mosFET. The mosFET (Q15i, i=1 to N) of the positive output stage, which is composed of n channels or p channels, In the negative output stage mosFET (Q25j, j=1 to N) which is configured as n-channel or p-channel, If the positive output stage and the negative output stage are composed of MOSFETs of different channels, Let i and j be set as j = i for i = 2 to N, If the positive output stage and the negative output stage are composed of MOSFETs of the same channel, Let i and j be defined as j = N + 2 - i for i = 2 to N. Two (N-1) sets of resistors and capacitors of 0Ω or greater connected in series are provided. For each of the N-1 combinations of mosFETs (Q15i, Q25j) consisting of the mosFET (Q15i) of the positive output stage and the mosFET (Q25j) of the negative output stage, The series-connected resistor and capacitor are connected between the source of the mosFET (Q15i) and the gate of the mosFET (Q25j), and the series-connected resistor and capacitor are connected between the source of the mosFET (Q25j) and the gate of the mosFET (Q15i), A high-voltage amplifier characterized by a configuration in which a low-impedance source drives a high-impedance gate through a series-connected resistor and capacitor, thereby achieving high speed and wide bandwidth.

11. In the high-voltage amplifier according to claim 9, N sets of resistors and capacitors with an impedance of 0 ohm or greater are provided in series. These are connected in parallel to each of the N resistors (R10i, i=1 to N) in the positive output stage, and N sets of resistors and capacitors of 0Ω or more connected in series are further provided. A high-voltage amplifier characterized by connecting these in parallel to each of the N resistors (R20j, j=1 to N) in the negative output stage, thereby preventing oscillation and providing a stable, high-speed response.

12. In the high-voltage amplifier according to claim 10, The series-connected resistor and capacitor described in claim 11 are connected in parallel to each of the resistors (R10i, i=1 to N) and the resistor (R20j, j=1 to N) in the output stage. A high-voltage amplifier characterized by its configuration that prevents oscillation, operates stably even under no-load conditions, and enables high-speed, wide-bandwidth operation.

13. It has an input stage equipped with a low-voltage amplification section, an output stage equipped with a high-voltage amplification section, and a photocoupler interposed between the input stage and the output stage. The output stage includes a positive output stage connected to a positive power supply that controls the source current, and a negative output stage connected to a negative power supply that controls the sink current. The aforementioned photocoupler also includes a photocoupler (U101) that controls the positive output stage and a photocoupler (U201) that controls the negative output stage. In a high-voltage amplifier that amplifies an input signal in the low-voltage amplification section, introduces the amplified signal to the high-voltage amplification section via the photocouplers (U101, U201), and outputs the amplified signal from the output terminal, The positive output stage is equipped with two or more N MOSFETs (Q10i, i=1 to N), These mosFETs are connected in series in numerical order (Q10N, ..., Q102, Q101), and the source of the mosFET (Q101) is connected to the photocoupler (U101) via a resistor of 0Ω or more, and these series-connected mosFETs (Q10i, i=1 to N) and the photocoupler (U101) are arranged between the positive power supply and the output terminal. The negative output stage is equipped with the same N MOSFETs (Q20j, j=1 to N), These mosFETs are connected in series in numerical order (Q20N, ..., Q202, Q201), and the source of the mosFET (Q201) is connected to the photocoupler (U201) via a resistor of 0Ω or more, and these series-connected mosFETs (Q20j, j=1 to N) and the photocoupler (U201) are arranged between the negative power supply and the output terminal. N resistors (R10i, i=1 to N) and a constant voltage circuit or element (Z101) are provided on the positive output stage side, and these are connected in series in numerical order (R10N, ..., R102, R101, Z101). The circuit is positioned between the positive power supply and the output terminal to supply bias voltages of predetermined potentials, divided from the positive power supply to the output terminal, to the gates of each mosFET (Q10i, i=1 to N) of the positive output stage. On the negative output stage side, N resistors (R20j, j=1 to N) and a constant voltage circuit or element (Z201) are provided, and these are connected in series in numerical order (R20N, ..., R202, R201, Z201). The circuit is positioned between the negative power supply and the output terminal to supply bias voltages of predetermined potentials, divided from the negative power supply to the output terminal, to the gates of each mosFET (Q20j, j=1 to N) of the negative output stage. In a high-voltage amplifier configured such that the high-voltage amplification section controls the source current in the positive output stage and the sink current in the negative output stage, In the mosFET (Q10i, i=1 to N) and the mosFET (Q20j, j=1 to N) The mosFET (Q10i, i=1 to N) of the positive output stage, which is composed of n channels or p channels, In the negative output stage mosFET (Q20j, j=1 to N) which is configured as n-channel or p-channel, If the positive output stage and the negative output stage are composed of MOSFETs of different channels, Let i and j be set as j = i for i = 2 to N, If the positive output stage and the negative output stage are composed of MOSFETs of the same channel, Let i and j be defined as j = N + 2 - i for i = 2 to N. Two (N-1) sets of resistors and capacitors of 0Ω or greater connected in series are provided. The mosFET (Q10i) of the positive output stage and the mosFET (Q20j) of the negative output stage For each of the N-1 combinations of MOSFETs (Q10i, Q20j), By connecting the series-connected resistor and capacitor between the source of the mosFET (Q10i) and the gate of the mosFET (Q20j), and by connecting the series-connected resistor and capacitor between the source of the mosFET (Q20j) and the gate of the mosFET (Q10i), A high-voltage amplifier is characterized by a configuration that enables a fast response by having a low-impedance source drive a high-impedance gate through a series-connected resistor and capacitor. Width board.

14. In the high-voltage amplifier according to claim 13, N sets of resistors and capacitors with an impedance of 0 ohm or greater are provided in series. These are connected in parallel to each of the N resistors (R10i, i=1 to N) in the positive output stage, and N sets of resistors and capacitors of 0Ω or more connected in series are further provided. A high-voltage amplifier characterized by connecting these in parallel to each of the N resistors (R20j, j=1 to N) in the negative output stage, thereby preventing oscillation and providing a stable, high-speed response.

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