Light-emitting device

Abstract

To provide a light-emitting apparatus that can establish both power supply performance and viewing angle characteristics for chromaticity.SOLUTION: A light-emitting apparatus according to one aspect of the present disclosure includes: a plurality of organic electroluminescent sections each including a first reflective layer, an organic light-emitting layer and a second reflective layer; a light extraction surface from which light emitted from each of the organic electroluminescent sections via the second reflective layer is extracted; and a laminate section that is provided between each of the organic electroluminescent sections and the light extraction surface and that includes a plurality of types of transparent material layers different from a metal reflective film. The second reflective layer includes, from an organic light-emitting layer side, a first metal layer, a transparent layer, and a second metal layer, in this order. In each of the organic electroluminescent sections, an interference structure is formed according to a structure that includes a reflection interface A on the organic light-emitting layer side of the first reflective layer, a reflection interface B on the organic light-emitting layer side of the first metal layer, a reflection interface C on the light extraction surface side of the first metal layer, a reflection interface D on the organic light-emitting layer side of the second metal layer, and one or more reflection interfaces E formed according to differences in refractive indexes within the laminate section.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure relates to a light-emitting device using an organic electroluminescent (EL) element that emits light by an organic electroluminescence phenomenon.

Background Art

[0002] In recent years, numerous proposals have been made regarding the structure of light-emitting devices using organic EL elements (for example, Patent Documents 1 to 4).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Patent Document 3

Patent Document 4

Summary of the Invention

Problems to be Solved by the Invention

[0004] Among such light-emitting devices, in the top emission method, as the size increases, it has become difficult to achieve both power supply performance and chromaticity viewing angle characteristics. Therefore, it is desirable to provide a light-emitting device capable of achieving both power supply performance and chromaticity viewing angle characteristics.

Means for Solving the Problems

[0005] A light-emitting device according to a first aspect of this disclosure comprises a plurality of organic electroluminescent sections including a first reflective layer, an organic light-emitting layer, and a second reflective layer, and a light extraction surface from which light emitted from each organic electroluminescent section is extracted via the second reflective layer. The light-emitting device further comprises a laminated section provided between each organic electroluminescent section and the light extraction surface, and consisting of a plurality of transparent material layers different from a metal reflective film. The second reflective layer includes a first metal layer, a transparent layer, and a second metal layer thinner than the first metal layer, in this order from the organic light-emitting layer side. In each organic electroluminescent section, an interference structure is formed by a structure including a reflective interface A on the organic light-emitting layer side of the first reflective layer, a reflective interface B on the organic light-emitting layer side of the first metal layer, a reflective interface C on the light extraction surface side of the first metal layer, a reflective interface D on the organic light-emitting layer side of the second metal layer, and one or more reflective interfaces E formed by the refractive index difference within the laminated section.

[0006] In the light-emitting device relating to the first aspect of this disclosure, each organic electroluminescent section is configured to include a first metal layer, a transparent layer, and a second metal layer thinner than the first metal layer, in that order from the organic light-emitting layer side. In each organic electroluminescent section, an interference structure is formed by a structure including a reflective interface A on the organic light-emitting layer side of the first reflective layer, a reflective interface B on the organic light-emitting layer side of the first metal layer, a reflective interface C on the light extraction surface side of the first metal layer, a reflective interface D on the organic light-emitting layer side of the second metal layer, and one or more reflective interfaces E formed by the refractive index difference within the laminated section. As a result, even when the first metal layer is made thick, the deterioration of the viewing angle characteristics of chromaticity can be reduced.

[0007] A light-emitting device relating to a second aspect of this disclosure comprises a plurality of organic electroluminescent sections including a first reflective layer, an organic light-emitting layer, and a second reflective layer, and a light extraction surface from which light emitted from each organic electroluminescent section is extracted via the second reflective layer. The second reflective layer includes a first metal layer, a first transparent layer, a second metal layer thinner than the first metal layer, a second transparent layer, and a third metal layer thinner than the first metal layer, in this order from the organic light-emitting layer side. In each organic electroluminescent section, an interference structure is formed by a structure including a reflective interface A on the organic light-emitting layer side of the first reflective layer, a reflective interface B on the organic light-emitting layer side of the first metal layer, a reflective interface C on the light extraction surface side of the first metal layer, a reflective interface D on the organic light-emitting layer side of the second metal layer, and a reflective interface E on the organic light-emitting layer side of the third metal layer.

[0008] In the light-emitting device relating to the second aspect of this disclosure, each organic electroluminescent section is configured to include, in order from the organic light-emitting layer side, a first metal layer, a first transparent layer, a second metal layer thinner than the first metal layer, a second transparent layer, and a third metal layer thinner than the first metal layer. In each organic electroluminescent section, an interference structure is formed by a structure including the reflective interface A on the organic light-emitting layer side of the first reflective layer, the reflective interface B on the organic light-emitting layer side of the first metal layer, the reflective interface C on the light extraction surface side of the first metal layer, the reflective interface D on the organic light-emitting layer side of the second metal layer, and the reflective interface E on the organic light-emitting layer side of the third metal layer. As a result, even when the first metal layer is made thick, the deterioration of the viewing angle characteristics of chromaticity can be reduced. [Effects of the Invention]

[0009] According to the light-emitting device relating to the first and second aspects of this disclosure, even when the first metal layer is made thick, the deterioration of the viewing angle characteristics of chromaticity can be reduced, thereby enabling a balance between power supply performance and viewing angle characteristics of chromaticity. The effects described herein are not necessarily limited and may be any of the effects described herein. [Brief explanation of the drawing]

[0010] [Figure 1] This is a cross-sectional view showing the schematic configuration of a light-emitting device according to one embodiment of the present disclosure. [Figure 2] It is a cross-sectional view showing the configuration of the red light-emitting portion shown in FIG. 1. [Figure 3] It is a cross-sectional view showing the configuration of the green light-emitting portion shown in FIG. 1. [Figure 4] It is a cross-sectional view showing the configuration of the blue light-emitting portion shown in FIG. 1. [Figure 5] It is a cross-sectional view for explaining the optical action of the light-emitting device shown in FIG. 1. [Figure 6] It is a diagram showing an example of the change in chromaticity according to the viewing angle of the light-emitting device according to the comparative example. [Figure 7] It is a diagram showing an example of the change in luminance according to the viewing angle of the light-emitting device according to the comparative example. END]] [Figure 8] It is a diagram showing an example of the change in chromaticity according to the viewing angle of the light-emitting devices according to the comparative example and the example. [Figure 9] It is a cross-sectional view showing a modified example of the configuration of the light-emitting portion shown in FIG. 1. [Figure 10] It is a cross-sectional view showing a modified example of the configuration of the light-emitting portion shown in FIG. 1. [Figure 11] It is a diagram showing a schematic configuration of a display device to which the light-emitting device shown in FIG. 1 and the like is applied. [Figure 12] It is a circuit diagram showing the circuit configuration of the pixel shown in FIG. 11. [Figure 13] It is a diagram showing an example of the appearance of an electronic device to which the display device shown in FIG. 11 is applied. [Figure 14] It is a diagram showing an example of the appearance of a lighting device to which the light-emitting device shown in FIG. 1 and the like is applied.

Mode for Carrying Out the Invention

[0011] Embodiments of the present disclosure will be described in detail below in the following order with reference to the drawings. 1. Embodiment (Light-Emitting Device) 2. Modified Example (Light-Emitting Device) 3. Application Examples (Display Device, Electronic Device, Lighting Device)

[0012] <1. Embodiment> [composition] Figure 1 shows an example of the cross-sectional configuration of the main part of a light-emitting device 1 according to one embodiment of the present disclosure. The light-emitting device 1 includes a substrate 11, on which a plurality of red light-emitting parts 10R, a plurality of green light-emitting parts 10G, and a plurality of blue light-emitting parts 10B are provided. The red light-emitting parts 10R correspond to a specific example of the "organic electroluminescent part" and the "first organic electroluminescent part" of the present disclosure. The green light-emitting parts 10G correspond to a specific example of the "organic electroluminescent part" and the "first organic electroluminescent part" of the present disclosure. The blue light-emitting parts 10B correspond to a specific example of the "organic electroluminescent part" and the "second organic electroluminescent part" of the present disclosure.

[0013] The red light-emitting section 10R has, on the substrate 11, an electrode layer 12R, a red organic layer 13R including a red light-emitting layer 131R, a metal layer 14R, a transparent layer 15R, a metal layer 16R, a transparent layer 17R, and a transparent layer 18R in that order. The green light-emitting section 10G has, on the substrate 11, an electrode layer 12G, a green organic layer 13G including a green light-emitting layer 131G, a metal layer 14G, a transparent layer 15G, a metal layer 16G, a transparent layer 17G, and a transparent layer 18G in that order. The blue light-emitting section 10B has, on the substrate 11, an electrode layer 12B, a blue organic layer 13B including a blue light-emitting layer 131B, a metal layer 14B, a transparent layer 15B, a metal layer 16B, a transparent layer 17B, and a transparent layer 18B in that order. In this specification, "transparent" means having light transmittance to light emitted from the red light-emitting section 10R, the green light-emitting section 10G, and the blue light-emitting section 10B (i.e., light in the visible region).

[0014] The electrode layers 12R, 12G, and 12B correspond to a specific example of the "first reflective layer" in this disclosure. The laminate consisting of the metal layer 14R, transparent layer 15R, metal layer 16R, transparent layer 17R, and transparent layer 18R corresponds to a specific example of the "laminated portion consisting of multiple types of transparent material layers different from the metal reflective film" in this disclosure. The laminate consisting of the metal layer 14G, transparent layer 15G, metal layer 16G, transparent layer 17G, and transparent layer 18G corresponds to a specific example of the "laminated portion consisting of multiple types of transparent material layers different from the metal reflective film" in this disclosure. The laminate consisting of the metal layer 14B, transparent layer 15B, metal layer 16B, transparent layer 17B, and transparent layer 18B corresponds to a specific example of the "laminated portion consisting of multiple types of transparent material layers different from the metal reflective film" in this disclosure.

[0015] The red light-emitting section 10R emits light in the red wavelength range (red light LR) generated in the red light-emitting layer 131R by current injection through the electrode layer 12R and the metal layer 14R, from the transparent layer 18R side. The green light-emitting section 10G emits light in the green wavelength range (green light LG) generated in the green light-emitting layer 131G by current injection through the electrode layer 12G and the metal layer 14G, from the transparent layer 18G side. The blue light-emitting section 10B emits light in the blue wavelength range (blue light LB) generated in the blue light-emitting layer 131B by current injection through the electrode layer 12B and the metal layer 14B, from the transparent layer 18B side. The light-emitting device 1 is configured to emit light from the red light-emitting layer 131R, the green light-emitting layer 131G, and the blue light-emitting layer 131B, and to cause multiple reflections between the electrode layers 12R, 12G, 12B and the transparent layers 18R, 18G, 18B, thereby extracting the light from the transparent layers 18R, 18G, 18B side. In other words, the light-emitting device 1 is a top-emitting type light-emitting device with a resonator structure.

[0016] The substrate 11 is a plate-shaped member for supporting the red light-emitting layer 131R, the green light-emitting layer 131G, and the blue light-emitting layer 131B, and is made of, for example, a transparent glass substrate or a semiconductor substrate. The substrate 11 may also be made of a flexible substrate. The substrate 11 may also be a circuit board on which a circuit (pixel circuit 18-1 described later) for driving the red light-emitting layer 131R, the green light-emitting layer 131G, and the blue light-emitting layer 131B is provided.

[0017] The electrode layers 12R, 12G, and 12B (first electrodes) function as both anode electrodes and reflective layers. The electrode layers 12R, 12G, and 12B (first electrodes) are formed from, for example, a light-reflective material. Examples of light-reflective materials used for electrode layers 12R, 12G, and 12B include aluminum (Al), aluminum alloys, platinum (Pt), gold (Au), chromium (Cr), or tungsten (W). The electrode layers 12R, 12G, and 12B (first electrodes) may be constructed by laminating a transparent conductive material and a light-reflective material. The electrode layers 12R, 12G, and 12B may have a laminated structure in which, for example, silver (Ag) or an Ag alloy is laminated with a transparent conductive material such as ITO. The thickness of the electrode layers 12R, 12G, and 12B is, for example, 100 nm to 300 nm.

[0018] The red organic layer 13R has, for example, a hole injection layer, a hole transport layer, a red light-emitting layer 131R, an electron transport layer, and an electron injection layer in that order, starting from a position close to the electrode layer 12R. The green organic layer 13G has, for example, a hole injection layer, a hole transport layer, a green light-emitting layer 131G, an electron transport layer, and an electron injection layer in that order, starting from a position close to the electrode layer 12G. The blue organic layer 13B has, for example, a hole injection layer, a hole transport layer, a blue light-emitting layer 131B, an electron transport layer, and an electron injection layer in that order, starting from a position close to the electrode layer 12B.

[0019] The hole injection layer is a layer designed to prevent leakage. The hole injection layer is formed from, for example, hexaazatriphenylene (HAT). The thickness of the hole injection layer is, for example, between 1 nm and 20 nm. The hole transport layer is formed from, for example, α-NPD[N,N'-di(1-naphthyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine]. The thickness of the hole transport layer is, for example, between 15 nm and 100 nm.

[0020] The red light-emitting layer 131R, the green light-emitting layer 131G, and the blue light-emitting layer 131B are configured to emit light of a predetermined color through the bonding of holes and electrons. The thickness of the red light-emitting layer 131R, the green light-emitting layer 131G, and the blue light-emitting layer 131B is, for example, between 5 nm and 50 nm. The red light-emitting layer 131R emits light in the red wavelength range (first wavelength band). The red light-emitting layer 131R is formed, for example, by rubrene doped with a pyrometenboron complex. In this case, rubrene is used as the host material. The green light-emitting layer 131G emits light in the green wavelength range. The green light-emitting layer 131G is, for example, Alq 3 It is formed by a (trisquinolinol aluminum complex). The blue light-emitting layer 131B emits light in the blue wavelength range (second wavelength range, shorter than the first wavelength range) which is shorter than the red wavelength range. The blue light-emitting layer 131B is formed by ADN (9,10-di(2-naphthyl)anthracene) doped with a diaminocrisene derivative, for example. In this case, ADN is used as the host material and is, for example, a deposited film with a thickness of 20 nm. The diaminocrisene derivative is used as the dopant material and is, for example, doped at, for example, 5% relative to the film thickness.

[0021] The electron transport layer is formed of BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline). The thickness of the electron transport layer is, for example, between 15 nm and 200 nm. The electron injection layer is formed of, for example, lithium fluoride (LiF). The thickness of the electron injection layer is, for example, between 0.3 nm and 10 nm.

[0022] In this embodiment, the metal layer 14R, the transparent layer 15R, and the metal layer 16R are electrically connected to each other. The laminate (second electrode) consisting of the metal layer 14R, the transparent layer 15R, and the metal layer 16R serves as a cathode electrode paired with the electrode layer 12R, and also functions as a reflective layer. Similarly, the metal layer 14G, the transparent layer 15G, and the metal layer 16G are electrically connected to each other. The laminate (second electrode) consisting of the metal layer 14G, the transparent layer 15G, and the metal layer 16G serves as a cathode electrode paired with the electrode layer 12G, and also functions as a reflective layer. The metal layer 14B, the transparent layer 15B, and the metal layer 16B are electrically connected to each other. The laminate (second electrode) consisting of the metal layer 14B, the transparent layer 15B, and the metal layer 16B serves as a cathode electrode paired with the electrode layer 12B, and also functions as a reflective layer.

[0023] The metal layers 14R, 14G, and 14B are formed from a metallic material with high reflectivity. For example, the metal layers 14R, 14G, and 14B are formed from magnesium (Mg), silver (Ag), or alloys thereof. The metal layers 14R, 14G, and 14B are thicker than the metal layers 16R, 16G, and 16B. The thickness of the metal layers 14R, 14G, and 14B is, for example, between 5 nm and 50 nm. Because the metal layers 14R, 14G, and 14B are formed from such a highly reflective metallic material, the effect of the resonator structure is enhanced, and the light extraction efficiency can be improved. This reduces power consumption and also extends the lifespan of the red light-emitting section 10R, the green light-emitting section 10G, and the blue light-emitting section 10B.

[0024] The transparent layers 15R, 15G, and 15B are formed from a transparent conductive material. Examples of transparent conductive materials used in transparent layers 15R, 15G, and 15B include ITO (Indium Tin Oxide) or indium-zinc oxide (IZO). The thickness of transparent layers 15R, 15G, and 15B is, for example, between 30 nm and 600 nm. Transparent layer 15R is in contact with metal layers 14R and 16R. Transparent layer 15G is in contact with metal layers 14G and 16G. Transparent layer 15B is in contact with metal layers 14B and 16B.

[0025] The metal layers 16R, 16G, and 16B are formed from a metallic material with high reflectivity. Examples of metallic materials used for metal layers 16R, 16G, and 16B include magnesium (Mg), silver (Ag), or alloys thereof. The total thickness of metal layers 14R, 14G, and 14B and metal layers 16R, 16G, and 16B is, for example, 38 nm or more. In the interference structure described later, the thickness of metal layers 16R, 16G, and 16B is such that the interface on the light source side of metal layers 16R, 16G, and 16B and the interface on the light extraction side of metal layers 16R, 16G, and 16B can be considered substantially the same, for example, between 5 nm and 20 nm. Metal layer 16R is electrically connected to metal layer 14R via transparent layer 15R. Metal layer 16G is electrically connected to metal layer 14G via transparent layer 15G. The metal layer 16B is electrically connected to the metal layer 14B via the transparent layer 15B.

[0026] The transparent layers 17R, 17G, and 17B are formed from, for example, a transparent dielectric material or a transparent conductive material. Examples of transparent dielectric materials used in the transparent layers 17R, 17G, and 17B include silicon oxide (SiO2), silicon oxynitride (SiON), or silicon nitride (SiN). The transparent layers 17R, 17G, and 17B may also be formed from a low refractive index material such as MgF or NaF. Examples of transparent conductive materials used in the transparent layers 17R, 17G, and 17B include ITO or indium-zinc oxide (IZO). The thickness of the transparent layers 17R, 17G, and 17B is, for example, 50 nm to 1000 nm.

[0027] The transparent layers 18R, 18G, and 18B are formed from, for example, a transparent dielectric material. Examples of transparent dielectric materials used for transparent layers 18R, 18G, and 18B include silicon oxide (SiO2), silicon oxynitride (SiON), or silicon nitride (SiN). The transparent layers 18R, 18G, and 18B are in contact with the transparent layers 17R, 17G, and 17B. The interface between the transparent layers 18R, 18G, and 18B and the transparent layers 17R, 17G, and 17B is a reflective interface due to the refractive index difference between the transparent layers 18R, 18G, and 18B and the transparent layers 17R, 17G, and 17B. This reflective interface is composed of an interface with a refractive index difference of, for example, 0.15 or more. When the transparent layers 17R, 17G, and 17B are composed of SiON (refractive index: approximately 1.58), the transparent layers 18R, 18G, and 18B are composed of, for example, SiN (refractive index: approximately 2.05). The thickness of the transparent layers 18R, 18G, and 18B is, for example, between 500 nm and 10000 nm. The transparent layers 18R, 18G, and 18B may be formed from, for example, a transparent conductive material, a transparent insulating material, a resin material, or glass. The transparent layers 18R, 18G, and 18B may also be composed of air. By providing such layers, external interference to the resonator structure formed between the electrode layers 12R, 12G, and 12B and the reflective interface can be prevented.

[0028] Next, the resonator structures of the red light-emitting section 10R, the green light-emitting section 10G, and the blue light-emitting section 10B will be described. Figure 2 is a cross-sectional view showing the configuration of the red light-emitting section 10R. Figure 3 is a cross-sectional view showing the configuration of the green light-emitting section 10G. Figure 4 is a cross-sectional view showing the configuration of the blue light-emitting section 10B.

[0029] The red light-emitting section 10R has, from the substrate 11 side, a first reflection interface S1R, a second lower (light source side) reflection interface S2R, a second upper (light extraction side) reflection interface S2R', a third reflection interface S3R, a fourth reflection interface S4R, and a light extraction surface SDR in this order. In this case, an interference structure (microcavity structure) is formed by the structure including the first reflection interface S1R, the second lower reflection interface S2R, the second upper reflection interface S2R', the third reflection interface S3R, and the fourth reflection interface S4R. A light emission center OR of the red light-emitting layer 131R is provided between the first reflection interface S1R and the second lower reflection interface S2R. In other words, the red light-emitting layer 131R is provided between the first reflection interface S1R and the light extraction surface SDR, which are opposite to each other. The first reflection interface S1R is the interface between the electrode layer 12R and the red organic layer 13R. The second lower reflection interface S2R is the interface between the red organic layer 13R and the metal layer 14R. The second upper reflection interface S2R' is the interface between the metal layer 14R and the transparent layer 15R. The third reflection interface S3R is the interface between the transparent layer 15R and the metal layer 16R. The fourth reflection interface S4R is the interface between the transparent layer 17R and the transparent layer 18R. The light extraction surface SDR is the outermost surface of the red light-emitting section 10R. The outermost surface of the red light-emitting section 10R is in contact with, for example, an air layer. Light emitted from the red light-emitting section 10R is extracted from the light extraction surface SDR via the metal layer 14R, the transparent layer 15R, the metal layer 16R, the transparent layer 17R, and the transparent layer 18R.

[0030] The green light-emitting section 10G has, from the substrate 11 side, a first reflection interface S1G, a second lower (light source side) reflection interface S2G, a second upper (light extraction side) reflection interface S2G', a third reflection interface S3G, a fourth reflection interface S4G, and a light extraction surface SDG in this order. In this case, an interference structure (microcavity structure) is formed by the structure including the first reflection interface S1G, the second lower reflection interface S2G, the second upper reflection interface S2G', the third reflection interface S3G, and the fourth reflection interface S4G. The light emission center OG of the green light-emitting layer 131G is provided between the first reflection interface S1G and the second reflection interface S2G. In other words, the green light-emitting layer 131G is provided between the first reflection interface S1G and the light extraction surface SDG, which are opposite to each other. The first reflection interface S1G is the interface between the electrode layer 12G and the green organic layer 13G. The second lower reflection interface S2G is the interface between the green organic layer 13G and the metal layer 14G. The second upper reflection interface S2G' is the interface between the metal layer 14G and the transparent layer 15G. The third reflection interface S3G is the interface between the transparent layer 15G and the metal layer 16G. The fourth reflection interface S4G is the interface between the transparent layer 17G and the transparent layer 18G. The light extraction surface SDG is the outermost surface of the green light-emitting section 10G. The outermost surface of the green light-emitting section 10G is in contact with, for example, an air layer. Light emitted from the green light-emitting section 10G is extracted from the light extraction surface SDG via the metal layer 14G, the transparent layer 15G, the metal layer 16G, the transparent layer 17G, and the transparent layer 18G.

[0031] The blue light-emitting section 10B has, from the substrate 11 side, a first reflection interface S1B, a second lower (light source side) reflection interface S2B, a second upper (light extraction side) reflection interface S2B', a third reflection interface S3B, a fourth reflection interface S4G, and a light extraction surface SDB in this order. In this case, an interference structure (microcavity structure) is formed by the structure including the first reflection interface S1B, the second lower reflection interface S2B, the second upper reflection interface S2B', the third reflection interface S3B, and the fourth reflection interface S4G. A light-emitting center OB is provided between the first reflection interface S1B and the second reflection interface S2B. In other words, a blue light-emitting layer 131B is provided between the first reflection interface S1B and the light extraction surface SDB, which are opposite to each other. The first reflection interface S1B is the interface between the electrode layer 12B and the blue organic layer 13B. The second lower reflection interface S2B is the interface between the blue organic layer 13B and the metal layer 14B. The second upper reflection interface S2B' is the interface between the metal layer 14B and the transparent layer 15B. The third reflection interface S3B is the interface between the transparent layer 15B and the metal layer 16B. The fourth reflection interface S4G is the interface between the transparent layer 17G and the transparent layer 18G. The light extraction surface SDB is the outermost surface of the blue light-emitting section 10B. The outermost surface of the blue light-emitting section 10B is in contact with, for example, an air layer. Light emitted from the blue light-emitting section 10B via the metal layer 14B, the transparent layer 15B, the metal layer 16B, the transparent layer 17B, and the transparent layer 18B is extracted from the light extraction surface SDB.

[0032] The first reflective interfaces S1R, S1G, S1B, the second upper reflective interfaces S2R, S2G, S2B, the second lower reflective interfaces S2R', S2G', S2B', and the third reflective interfaces S3R, S3G, S3B are formed by a metallic reflective film. The fourth reflective interface S4R, S4G, S4B is formed by the refractive index difference of multiple types of transparent material layers different from the metallic reflective film.

[0033] (1st reflective interface S1R, S1G, S1B) Assume that the electrode layers 12R, 12G, and 12B are formed from aluminum (Al) with a refractive index of 0.73 and an extinction coefficient of 5.91, and that the red organic layer 13R, green organic layer 13G, and blue organic layer 13B are formed from a material with a refractive index of 1.75. In this case, the first reflection interface S1R is located at an optical distance La1 from the emission center OR, the first reflection interface S1G is located at an optical distance Lb1 from the emission center OG, and the first reflection interface S1B is located at an optical distance Lc1 from the emission center OB.

[0034] Optical distance La1 is set so that the light at the central wavelength λa of the emission spectrum of the red emission layer 131R is reinforced by interference between the first reflection interface S1R and the emission center OR. Optical distance Lb1 is set so that the light at the central wavelength λb of the emission spectrum of the green emission layer 131G is reinforced by interference between the first reflection interface S1G and the emission center OG. Optical distance Lc1 is set so that the light at the central wavelength λc of the emission spectrum of the blue emission layer 131B is reinforced by interference between the first reflection interface S1B and the emission center OB.

[0035] Specifically, the optical distances La1, Lb1, and Lc1 satisfy the following equations (1) to (6).

[0036] 2La1 / λa1+φa1 / (2π)=Na...(1) λa-150 < λa1 < λa+80 ... (2) 2Lb1 / λb1+φb1 / (2π)=Nb···(3) λb-150 < λb1 < λb+80 ... (4) 2Lc1 / λc1+φc1 / (2π)=Nc...(5) λc-150 < λc1 < λc+80 ... (6) However, Na, Nb, Nc are integers greater than or equal to 0. The units for λa, λa1, λb, λb1, λc, and λc1 are nm. φa1: Phase change when light emitted from the red light-emitting layer 131R is reflected at the first reflection interface S1R. φb1: Phase change when light emitted from the green light-emitting layer 131G is reflected at the first reflection interface S1G. φc1: Phase change when light emitted from the blue light-emitting layer 131B is reflected at the first reflection interface S1B. λa1: Wavelength satisfying equation (2) λb1: Wavelength satisfying equation (4) λc1: Wavelength satisfying equation (6)

[0037] φa1, φb1, and φc1 can be calculated using the complex refractive index N=n0-jk (n0: refractive index, k: extinction coefficient) of the constituent materials of electrode layers 12R, 12G, and 12B, and the refractive indices of the red organic layer 13R, the green organic layer 13G, and the blue organic layer 13B (see, for example, Principles of Optics, Max Born and Emil Wolf, 1974 (PERGAMON PRESS)). The refractive index of each constituent material can be measured using a spectroscopic ellipsometry instrument.

[0038] If the values ​​of Na, Nb, and Nc are large, the so-called microcavity effect may not be obtained. Therefore, it is preferable that Na=0, Nb=0, and Nc=0. When the optical distance La1 satisfies equations (1) and (2) above, it is also possible to shift λa1 significantly from the central wavelength λa. Similarly, when the optical distance Lb1 satisfies equations (3) and (4) above, it is also possible to shift λb1 significantly from the central wavelength λb. Furthermore, when the optical distance Lc1 satisfies equations (5) and (6) above, it is also possible to shift λc1 significantly from the central wavelength λc.

[0039] (Second lower reflective interface S2R, S2G, S2B) Assume that the red organic layer 13R, the green organic layer 13G, and the blue organic layer 13B are formed from a material with a refractive index of 1.75, and the metal layers 14R, 14G, and 14B are formed from silver (Ag) with a refractive index of 0.13 and an extinction coefficient of 3.96. In this case, the second lower reflection interface S2R is located at an optical distance La2 from the emission center OR, the second lower reflection interface S2G is located at an optical distance Lb2 from the emission center OG, and the second lower reflection interface S2B is located at an optical distance Lc2 from the emission center OB.

[0040] Optical distance La2 is set so that the light at the central wavelength λa of the emission spectrum of the red emission layer 131R is reinforced by interference between the second lower reflection interface S2R and the emission center OR. Optical distance Lb2 is set so that the light at the central wavelength λb of the emission spectrum of the green emission layer 131G is reinforced by interference between the second lower reflection interface S2G and the emission center OG. Optical distance Lc2 is set so that the light at the central wavelength λc of the emission spectrum of the blue emission layer 131B is reinforced by interference between the second lower reflection interface S2B and the emission center OB.

[0041] Specifically, the optical distances La2, Lb2, and Lc2 satisfy the following equations (7) to (12).

[0042] 2La2 / λa2+φa2 / (2π)=Ma...(7) λa-80 < λa2 < λa+80 ... (8) 2Lb2 / λb2+φb2 / (2π)=Mb...(9) λb-80 < λb² < λb+80 ... (10) 2Lc2 / λc2+φc2 / (2π)=Mc...(11) λc-80 < λc² < λc+80 ... (12) However, Ma, Mb, Mc are integers greater than or equal to 0. The units for λa, λa2, λb, λb2, λc, and λc2 are nm. φa2: Phase change when light emitted from the red light-emitting layer 131R is reflected at the second lower reflection interface S2R. φb2: Phase change when light emitted from the green light-emitting layer 131G is reflected at the second lower reflection interface S2G. φc2: Phase change when light emitted from the blue light-emitting layer 131B is reflected at the second lower reflection interface S2B. λa2: Wavelength satisfying equation (8) λb2: Wavelength satisfying equation (10) λc2: Wavelength satisfying equation (12)

[0043] φa2, φb2, and φc2 can be determined in the same way as φa1, φb1, and φc1. If the values ​​of Ma, Mb, and Mc are large, the so-called microcavity effect may not be obtained. Therefore, it is preferable that Ma=1, Mb=1, and Mc=1.

[0044] When the optical distance La1 satisfies equations (1) and (2) above, and the optical distance La2 satisfies equations (7) and (8) above, a transmittance peak occurs at a predetermined wavelength due to the amplification effect of the first reflective interface S1R and the second lower reflective interface S2R. When the optical distance Lb1 satisfies equations (3) and (4) above, and the optical distance Lb2 satisfies equations (9) and (10) above, a transmittance peak occurs at a predetermined wavelength due to the amplification effect of the first reflective interface S1G and the second lower reflective interface S2G. When the optical distance Lc1 satisfies equations (5) and (6) above, and the optical distance Lc2 satisfies equations (11) and (12) above, a transmittance peak occurs at a predetermined wavelength due to the amplification effect of the first reflective interface S1B and the second lower reflective interface S2B.

[0045] (Second upper reflective interface S2R', S2G', S2B') Assume that the red organic layer 13R, the green organic layer 13G, and the blue organic layer 13B are formed from a material with a refractive index of 1.75, and the metal layers 14R, 14G, and 14B are formed from silver (Ag) with a refractive index of 0.13 and an extinction coefficient of 3.96. In this case, the second upper reflection interface S2R' is located at an optical distance La2' from the emission center OR, the second upper reflection interface S2G' is located at an optical distance Lb2' from the emission center OG, and the second upper reflection interface S2B' is located at an optical distance Lc2' from the emission center OB.

[0046] Optical distance La2' is set so that the light at the central wavelength λa of the emission spectrum of the red emission layer 131R is weakened by interference between the second upper reflection interface S2R' and the emission center OR. Optical distance Lb2' is set so that the light at the central wavelength λb of the emission spectrum of the green emission layer 131G is weakened by interference between the second upper reflection interface S2G' and the emission center OG. Optical distance Lc2' is set so that the light at the central wavelength λc of the emission spectrum of the blue emission layer 131B is weakened by interference between the second upper reflection interface S2B' and the emission center OB.

[0047] Specifically, the optical distances La2', Lb2', and Lc2' satisfy the following equations (13) to (18).

[0048] 2La2' / λa2'+φa2' / (2π)=Ma+1 / 2···(13) λa-80 < λa2' < λa+80 ... (14) 2Lb2' / λb2'+φb2' / (2π)=Mb+1 / 2···(15) λb-80 < λb² < λb+80 ... (16) 2Lc2' / λc2'+φc2' / (2π)=Mc+1 / 2 (17) λc-80 < λc² < λc+80 ... (18) However, Ma, Mb, Mc are integers greater than or equal to 0. The units for λa, λa²', λb, λb²', λc, and λc²' are nm. φa2': Phase change when light emitted from the red light-emitting layer 131R is reflected at the second upper reflection interface S2R'. φb2': Phase change when light emitted from the green light-emitting layer 131G is reflected at the second upper reflection interface S2G'. φc2': Phase change when light emitted from the blue light-emitting layer 131B is reflected at the second upper reflection interface S2B'. λa2': wavelength satisfying equation (13) λb2': wavelength satisfying equation (15) λc²': wavelength satisfying equation (17)

[0049] φa2', φb2', and φc2' can be determined in the same way as φa1, φb1, and φc1. When the optical distances La2', Lb2', and Lc2' satisfy equations (13) to (18) above, the emission state can be adjusted for each light-emitting part (red light-emitting part 10R, green light-emitting part 10G, and blue light-emitting part 10B). In this way, the reflection at the second upper reflection interface S2R' weakens the light generated in the red light-emitting layer 131R, and the full width at half maximum of the spectrum is broadened. Similarly, the reflection at the second upper reflection interface S2G' weakens the light generated in the green light-emitting layer 131G, and the full width at half maximum of the spectrum is broadened. The reflection at the second upper reflection interface S2B' weakens the light generated in the blue light-emitting layer 131B, and the full width at half maximum of the spectrum is broadened.

[0050] (Third reflective interface S3R, S3G, S3B) The optical distance La3 is set such that, for example, the light with a central wavelength λa in the emission spectrum of the red emission layer 131R is weakened by interference between the third reflection interface S3R and the emission center OR. In this case, the optical distance between the second lower reflection interface S2R and the third reflection interface S3R is less than or equal to the central wavelength λa of the light emitted from the red emission layer 131R. The optical distance Lb3 is set such that, for example, the light with a central wavelength λb in the emission spectrum of the green emission layer 131G is weakened by interference between the third reflection interface S3G and the emission center OG. In this case, the optical distance between the second lower reflection interface S2G and the third reflection interface S3G is less than or equal to the central wavelength λb of the light emitted from the green emission layer 131G. The optical distance Lc3 is set such that, for example, the light with a central wavelength λc in the emission spectrum of the blue emission layer 131B is reinforced by interference between the third reflection interface S3B and the emission center OB. At this time, the optical distance between the second lower reflection interface S2B and the third reflection interface S3B is less than or equal to the central wavelength λc of the light emitted from the blue light-emitting layer 131B.

[0051] The optical distances La3, Lb3, and Lc3 satisfy, for example, the following equations (19) to (24).

[0052] 2La3 / λa3+φa3 / (2π)=Ka+1 / 2···(19) λa-150<λa3<λa+150 (20) 2Lb3 / λb3+φb3 / (2π)=Kb+1 / 2···(21) λb-150<λb3<λb+150 (22) 2Lc3 / λc3+φc3 / (2π)=Kc...(23) λc-150<λc3<λc+150...(24) However, Ka, Kb, and Kc are integers greater than or equal to 0. The units for λa, λa3, λb, λb3, λc, and λc3 are nm. φa3: Phase change when light emitted from the red light-emitting layer 131R is reflected at the third reflection interface S3R. φb3: Phase change when light emitted from the green light-emitting layer 131G is reflected at the third reflection interface S3G. φc3: Phase change when light emitted from the blue light-emitting layer 131B is reflected at the third reflection interface S3B. λa3: Wavelength satisfying equation (19) λb3: Wavelength satisfying equation (21) λc3: Wavelength satisfying equation (23)

[0053] φa3, φb3, and φc3 can be determined in the same way as φa1, φb1, and φc1. When the optical distances La3, Lb3, and Lc3 satisfy equations (19) to (24) above, the emission state can be adjusted for each light-emitting part (red light-emitting part 10R, green light-emitting part 10G, and blue light-emitting part 10B). In this way, the reflection at the third reflection interface S3R weakens the light generated in the red light-emitting layer 131R, and the full width at half maximum of the spectrum widens. Similarly, the reflection at the third reflection interface S3G weakens the light generated in the green light-emitting layer 131G, and the full width at half maximum of the spectrum widens. The reflection at the third reflection interface S3B strengthens the light generated in the blue light-emitting layer 131B, and the full width at half maximum of the spectrum narrows.

[0054] (4th reflective interface S4R, S4G, S4B) The optical distance La4 is set such that, for example, the light at the central wavelength λa of the emission spectrum of the red emission layer 131R is weakened by interference between the fourth reflection interface S4R and the emission center OR. In this case, the optical distance between the third reflection interface S3R and the fourth reflection interface S4R is 112 nm to 750 nm. This optical distance is set so that the round-trip optical distance between the third reflection interface S3R and the fourth reflection interface S4R is in the range of 0.5 λa to 2.0 λa. The optical distance Lb4 is set such that, for example, the light at the central wavelength λb of the emission spectrum of the green emission layer 131G is weakened by interference between the fourth reflection interface S4G and the emission center OG. In this case, the optical distance between the third reflection interface S3G and the fourth reflection interface S4G is 112 nm to 750 nm. This optical distance is set so that the round-trip optical distance between the third reflection interface S3G and the fourth reflection interface S4G is within the range of 0.5λb to 2.0λb. The optical distance Lc4 is set so that, for example, the light at the center wavelength λc of the emission spectrum of the blue emission layer 131B is reinforced by interference between the fourth reflection interface S4B and the emission center OB. In this case, the optical distance between the third reflection interface S3B and the fourth reflection interface S4B is 112nm to 750nm. This optical distance is set so that the round-trip optical distance between the third reflection interface S3B and the fourth reflection interface S4B is within the range of 0.5λc to 2.0λc.

[0055] The optical distances La4, Lb4, and Lc4 satisfy, for example, the following equations (25) to (30).

[0056] 2La4 / λa4+φa4 / (2π)=Kd+1 / 2···(25) λa-150<λa4<λa+150 (26) 2Lb4 / λb4+φb4 / (2π)=Ke+1 / 2 (27) λb-150<λb4<λb+150 (28) 2Lc4 / λc4+φc4 / (2π)=Kf...(29) λc-150<λc4<λc+150...(30) However, Kd, ​​Ke, Kf are integers greater than or equal to 0. The units for λa, λa4, λb, λb4, λc, and λc4 are nm. φa4: Phase change when light emitted from the red light-emitting layer 131R is reflected at the fourth reflection interface S4R. φb4: Phase change when light emitted from the green light-emitting layer 131G is reflected at the fourth reflection interface S4G. φc4: Phase change when light emitted from the blue light-emitting layer 131B is reflected at the fourth reflection interface S4B. λa4: Wavelength satisfying equation (25) λb4: Wavelength satisfying equation (27) λc4: Wavelength satisfying equation (29)

[0057] φa4, φb4, and φc4 can be determined in the same way as φa1, φb1, and φc1. When optical distances La3, Lb3, and Lc3 satisfy equations (19) to (24) above, and optical distances La4, Lb4, and Lc4 satisfy equations (25) to (30) above, the emission state can be adjusted for each light-emitting part (red light-emitting part 10R, green light-emitting part 10G, and blue light-emitting part 10B). In this way, the reflection at the fourth reflection interface S4R weakens the light generated in the red light-emitting layer 131R, and the full width at half maximum of the spectrum is broadened. Also, the reflection at the fourth reflection interface S4G weakens the light generated in the green light-emitting layer 131G, and the full width at half maximum of the spectrum is broadened. The reflection at the fourth reflection interface S4B strengthens the light generated in the blue light-emitting layer 131B, and the full width at half maximum of the spectrum is narrowed.

[0058] Such a light-emitting device 1 can be manufactured by forming electrode layers 12R, 12G, 12B, organic layers (red organic layer 13R, green organic layer 13G, blue organic layer 13B), metal layers 14R, 14G, 14B, transparent layers 15R, 15G, 15B, metal layers 16R, 16G, 16B, transparent layers 17R, 17G, 17B, and transparent layers 18R, 18G, 18B in this order on a substrate 11. The red organic layer 13R, green organic layer 13G, and blue organic layer 13B may be formed by vapor deposition or by printing. In other words, the red organic layer 13R, green organic layer 13G, and blue organic layer 13B may be printed layers. The metal layers 14R, 14G, and 14B may be composed of layers common to each other. In this case, the material and thickness of the metal layers 14R, 14G, and 14B are equal to each other. The transparent layers 15R, 15G, and 15B may be composed of layers common to each other. In this case, the material and thickness of the transparent layers 15R, 15G, and 15B are equal to each other. The metal layers 16R, 16G, and 16B may be composed of layers common to each other. In this case, the material and thickness of the metal layers 16R, 16G, and 16B are equal to each other. The transparent layers 17R, 17G, and 17B may be composed of layers common to each other. In this case, the material and thickness of the transparent layers 17R, 17G, and 17B are equal to each other. The transparent layers 18R, 18G, and 18B may be composed of layers common to each other. In this case, the material and thickness of the transparent layers 18R, 18G, and 18B are equal to each other.

[0059] [Effect, Action] In the light-emitting device 1 described above, a driving current is injected into each light-emitting layer (red light-emitting layer 131R, green light-emitting layer 131G, blue light-emitting layer 131B) through the electrode layers 12R, 12G, 12B and the metal layers 14R, 14G, 14B. As a result, holes and electrons recombine in each light-emitting layer to produce excitons, causing light emission.

[0060] For example, as shown in Figure 5, the light generated in the red organic layer 13R is multiple-reflected between the first reflection interface S1R and the fourth reflection interface S4R, and extracted from the light extraction surface SDR. In the red light-emitting section 10R, red light LR is extracted from the light extraction surface SDR; in the green light-emitting section 10G, green light LG is extracted from the light extraction surface SDG; and in the blue light-emitting section 10B, blue light LB is extracted from the light extraction surface SDB. Various colors can be expressed by additive color mixing of these red light LR, green light LG, and blue light LB.

[0061] However, despite various proposed structures for light-emitting devices with such resonator structures, it remains difficult to improve the light distribution characteristics.

[0062] For example, a method has been proposed to improve luminescence efficiency by setting the film thickness between the translucent electrode and the reflective electrode so that light of a desired wavelength resonates (see, for example, Patent Document 1). Attempts have also been made to improve the viewing angle characteristics of the white chromaticity point by controlling the film thickness of the organic layer to control the balance of attenuation of the three primary colors (red, green, and blue) (see, for example, Patent Document 4).

[0063] However, such a resonator structure functions as an interference filter with a narrow half-width for the extracted light spectrum. Therefore, when the light extraction surface is viewed from an oblique angle, the wavelength of the light shifts significantly. As a result, the emission intensity decreases depending on the viewing angle, leading to a high degree of dependence on the viewing angle.

[0064] Furthermore, Patent Document 2 proposes a structure for reducing chromaticity changes due to viewing angle. However, while this structure may be applicable to monochromatic displays and reduce the viewing angle dependence of luminance, it is difficult to apply it to a sufficiently wide wavelength range. Increasing the reflectivity could be considered to broaden the applicable wavelength range, but in this case, the light extraction efficiency would decrease significantly.

[0065] As described above, while it is possible to reduce the angle dependence by adjusting the positional relationships within the resonator structure and the light emission position, this method can be difficult to use in some cases. For example, this can occur when wavelength dispersion of the refractive index occurs due to the spectrum of light emitted from each light emission layer. In wavelength dispersion of the refractive index, the refractive index of the constituent materials differs depending on the wavelength, resulting in differences in the effect of the resonator structure between red, green, and blue organic EL elements. For example, in a red organic EL element, the peak of the extracted red light becomes too steep, while in a blue organic EL element, the peak of the extracted blue light becomes too gentle. When the effect of the resonator structure differs significantly for each element region in this way, the angle dependence of luminance and chromaticity increases, and the light distribution characteristics deteriorate.

[0066] In contrast, in the light-emitting device 1 according to this embodiment, the influence of the third reflective interface S3R and the fourth reflective interface S4R on the light generated in the red light-emitting layer 131R is different from the influence of the third reflective interface S3B and the fourth reflective interface S4B on the light generated in the blue light-emitting layer 131B. Similarly, in the light-emitting device 1 according to this embodiment, the influence of the third reflective interface S3G and the fourth reflective interface S4G on the light generated in the green light-emitting layer 131G is different from the influence of the third reflective interface S3B and the fourth reflective interface S4B on the light generated in the blue light-emitting layer 131B. For example, the light generated in the red light-emitting layer 131R, the green light-emitting layer 131G, and the blue light-emitting layer 131B is as follows.

[0067] Light generated in the red light-emitting layer 131R is weakened by interference between the light-emitting center OR of the red light-emitting layer 131R and the second upper reflection interface S2R', the third reflection interface S3R, and the fourth reflection interface S4R. Similarly, light generated in the green light-emitting layer 131G is weakened by interference between the light-emitting center OG of the green light-emitting layer 131G and the second upper reflection interface S2G', the third reflection interface S3G, and the fourth reflection interface S4G. On the other hand, light generated in the blue light-emitting layer 131B is strengthened by interference between the light-emitting center OB of the blue light-emitting layer 131B and the third reflection interface S3B and the fourth reflection interface S4B.

[0068] As a result, the red light-emitting section 10R extracts red light LR with a gentle peak near its peak from the light extraction surface SDR, the green light-emitting section 10G extracts green light LG with a gentle peak near its peak from the light extraction surface SDG, and the blue light-emitting section 10B extracts blue light LB with a steep peak from the light extraction surface SDB. Therefore, the difference between the effect of the resonator structure of the red light-emitting section 10R and the green light-emitting section 10G and the effect of the resonator structure of the blue light-emitting section 10B becomes smaller, and the angular dependence of luminance and chromaticity becomes smaller. Thus, the light distribution characteristics can be improved. Furthermore, the light-emitting device 1 with high light distribution characteristics is also suitable for display devices that require high image quality, and the productivity of the display device can be improved.

[0069] Figure 6 shows an example of the change in chromaticity with respect to the viewing angle of the light-emitting devices according to Comparative Examples 1 and 2. In the light-emitting device according to Comparative Example 1, the electrode layer on the substrate side is made of a single layer of Al alloy, and the electrode layer on the light extraction surface side is made of a laminate of Ag alloy (25 nm) / IZO (93 nm) / Ag alloy (9 nm). Furthermore, in the light-emitting device according to Comparative Example 2, the electrode layer on the substrate side is made of a single layer of Al alloy, and the electrode layer on the light extraction surface side is made of a laminate of Ag alloy (27 nm) / IZO (93 nm) / Ag alloy (11 nm). Figure 7 shows an example of the change in brightness for each color with respect to the viewing angle of the light-emitting device according to Comparative Example 2.

[0070] As shown in Figure 6, in the light-emitting device according to Comparative Example 1, the total thickness of the Ag alloy included in the second electrode is 34 nm, and at this thickness, the chromaticity has almost no dependence on the viewing angle. However, as shown in Figure 6, in the light-emitting device according to Comparative Example 2, the total thickness of the Ag alloy included in the second electrode is 38 nm, and at this thickness, the chromaticity has a strong dependence on the viewing angle, and the image quality of the display is impaired. This phenomenon is due to the effect of the complex refractive index wavelength dispersion of the metal thin film on the light extraction side, and as the film thickness increases, the wavelength dependence becomes stronger, as shown in Figure 7, for example.

[0071] Figure 8 shows an example of the change in chromaticity with respect to the viewing angle of the light-emitting devices according to Comparative Examples 2 and 3 and Examples 1 and 2. In the light-emitting device according to Comparative Example 3, the second electrode is made of a single layer of Ag alloy (19 nm). In the light-emitting device according to Example 1, the total thickness of the Ag alloy included in the second electrode is 38 nm, but the viewing angle characteristics of the chromaticity are similar to those of the light-emitting device according to Comparative Example 3, indicating that there is almost no viewing angle dependence of the chromaticity. This is because the light-emitting device according to the example is provided with a reflective interface (the fourth reflective interface S4R, S4G, S4B mentioned above) formed by the refractive index difference between the SiON layer (110 nm) and the SiN layer (800 nm), and this is due to the interference effect of this reflective interface. Furthermore, in the light-emitting device according to the example, the thickness of the second electrode is doubled compared to the light-emitting device according to Comparative Example 3, and the resistance is halved. Furthermore, in the light-emitting device according to Example 2, the total thickness of the Ag alloy included in the second electrode is 44 nm, but the viewing angle characteristics of the chromaticity are only slightly inferior to those of Example 1, indicating that the viewing angle dependence of the chromaticity is relatively small.

[0072] Based on the above, in this embodiment, even when the metal layer included in the cathode electrodes on the light extraction surfaces SDR, SDG, and SDB is made thick, the deterioration of the chromatic viewing angle characteristics can be reduced. Therefore, both power supply performance and chromatic viewing angle characteristics can be achieved.

[0073] Furthermore, in this embodiment, the optical distance between the second lower reflection interface S2R and the third reflection interface S3R is less than or equal to the central wavelength λa of the light emitted from the red light-emitting layer 131R. Similarly, the optical distance between the second lower reflection interface S2G and the third reflection interface S3G is less than or equal to the central wavelength λb of the light emitted from the green light-emitting layer 131G. The optical distance between the second lower reflection interface S2B and the third reflection interface S3B is less than or equal to the central wavelength λc of the light emitted from the blue light-emitting layer 131B. As a result, the peak profile of the spectrum of the light generated in the red light-emitting layer 131R, green light-emitting layer 131G, and blue light-emitting layer 131B can be adjusted by the interaction of the second lower reflection interfaces S2R, S2G, S2B and the third reflection interfaces S3R, S3G, S3B with respect to the light generated in the light-emitting layers 131R, 131G, and 131B. Therefore, even when the total thickness of the metal layer contained in the cathode electrode on the light extraction surface SDR, SDG, and SDB is increased, the deterioration of the chromaticity viewing angle characteristics can be reduced.

[0074] Furthermore, in this embodiment, the interference structure in the red light-emitting section 10R is configured to satisfy the above equations (1), (2), (7), (8), (13), (14), (19), and (20). Similarly, in the green light-emitting section 10G, the interference structure is configured to satisfy the above equations (3), (4), (9), (10), (15), (16), (21), and (22). As a result, in the red light-emitting section 10R, red light LR with a gradual peak is extracted from the light extraction surface SDR, and in the green light-emitting section 10G, green light LG with a gradual peak is extracted from the light extraction surface SDG. As a result, abrupt changes in brightness and chromaticity due to angle can be suppressed.

[0075] Furthermore, in this embodiment, the interference structure in the blue light-emitting section 10B is configured to satisfy the above equations (5), (6), (11), (12), (17), (18), (23), and (24). As a result, the blue light-emitting section 10B extracts blue light LB with a steep peak from the light extraction surface SDB. Therefore, the difference between the effect of the resonator structure of the red light-emitting section 10R and the green light-emitting section 10G and the effect of the resonator structure of the blue light-emitting section 10B is reduced, and the angular dependence of luminance and chromaticity is reduced. Thus, the light distribution characteristics can be improved. In addition, the light-emitting device 1 with high light distribution characteristics is suitable for display devices that require high image quality, and the productivity of the display device can be improved.

[0076] Furthermore, in this embodiment, in each light-emitting section (red light-emitting section 10R, green light-emitting section 10G, blue light-emitting section 10B), the interference structure is configured such that the first reflection interfaces S1R, S1G, S1B and the second lower reflection interfaces S2R, S2G, S2B enhance the light in the wavelength band emitted from each light-emitting layer (red light-emitting layer 131R, green light-emitting layer 131G, blue light-emitting layer 131B). Furthermore, in each light-emitting section (red light-emitting section 10R, green light-emitting section 10G, blue light-emitting section 10B), the interference structure is configured such that the second upper reflection interfaces S2R', S2G', S2B', the third reflection interfaces S3R, S3G, S3B, and the fourth reflection interfaces S4R, S4G, S4B weaken the light in the wavelength range emitted from each light-emitting layer (red light-emitting layer 131R, green light-emitting layer 131G) and strengthen the light in the wavelength range emitted from the blue light-emitting layer 131B.

[0077] As a result, the red light-emitting section 10R extracts red light LR with a gentle peak near its peak from the light extraction surface SDR, the green light-emitting section 10G extracts green light LG with a gentle peak near its peak from the light extraction surface SDG, and the blue light-emitting section 10B extracts blue light LB with a steep peak from the light extraction surface SDB. Consequently, when the difference between the effect of the resonator structure of the red light-emitting section 10R and the green light-emitting section 10G and the effect of the resonator structure of the blue light-emitting section 10B becomes small, the angular dependence of luminance and chromaticity decreases. Therefore, the light distribution characteristics can be improved. Furthermore, the light-emitting device 1 with high light distribution characteristics is also suitable for display devices that require high image quality, and the productivity of the display device can be improved.

[0078] Furthermore, in this embodiment, the metal layers 14R, 14G, and 14B are thicker than the metal layers 16R, 16G, and 16B. This makes it possible to improve power supply performance without impairing the angle dependence of chromaticity.

[0079] Furthermore, in this embodiment, the total thickness of metal layers 14R, 14G, 14B and 16R, 16G, 16B is 44 nm or less. Generally, a high-quality display requires that the value of ΔU'V' (the value on the vertical axis in Figure 8) at a viewing angle of 45° be 0.010 or less. As shown in Figure 8, this condition is met when the total thickness of metal layers 14R, 14G, 14B and 16R, 16G, 16B is 44 nm or less. Consequently, by having a total thickness of metal layers 14R, 14G, 14B and 16R, 16G, 16B of 44 nm or less, power supply performance can be improved without impairing the angle dependence of chromaticity.

[0080] Furthermore, in this embodiment, the substrate 11 is a circuit board equipped with a circuit (pixel circuit 18-1 described later) that drives the red light-emitting layer 131R, the green light-emitting layer 131G, and the blue light-emitting layer 131B. Here, the light-emitting device 1 is a top-emitting type light-emitting device. As a result, the light emitted from the red light-emitting layer 131R, the green light-emitting layer 131G, and the blue light-emitting layer 131B is not blocked by the pixel circuit 18-1 in the circuit board, so a high light extraction efficiency can be obtained.

[0081] Furthermore, in this embodiment, the transparent layers 15R, 15G, and 15B are transparent conductive layers. As a result, the metal layers 14R, 14G, and 14B, the transparent layers 15R, 15G, and 15B, and the metal layers 16R, 16G, and 16B are electrically connected to each other and function as electrodes (cathode electrodes) on the light extraction surfaces SDR, SDG, and SDB. Consequently, the total thickness of the electrodes (cathode electrodes) on the light extraction surfaces SDR, SDG, and SDB can be increased. Therefore, power supply performance can be improved without impairing the angle dependence of chromaticity.

[0082] Furthermore, in this embodiment, it is preferable that the red light-emitting layer 131R, the green light-emitting layer 131G, and the blue light-emitting layer 131B are printed layers. Organic layers tend to have varying thicknesses depending on the region due to drying processes, etc. That is, film thickness distributions tend to occur in organic layers. On the other hand, in this embodiment, because the red light-emitting layer 131R, the green light-emitting layer 131G, and the blue light-emitting layer 131B are printed layers, it is possible to adjust for differences in the effect of the resonator structure of each light-emitting element caused by the film thickness distribution of the red light-emitting layer 131R, the green light-emitting layer 131G, and the blue light-emitting layer 131B.

[0083] <2. Variant> The following describes modified examples of this embodiment. In the following description, components identical to those in the above embodiment will be denoted by the same reference numerals, and their descriptions will be omitted as appropriate.

[0084] [Differentiation A] In the above embodiment, for example, as shown in Figure 9, each light-emitting part (red light-emitting part 10R, green light-emitting part 10G, blue light-emitting part 10B) may have a metal layer 19R, 19G, 19B between the transparent layers 17R, 17G, 17B and the transparent layers 18R, 18G, 18B. In this case, the transparent layers 17R, 17G, 17B are formed of a transparent conductive material. Examples of transparent conductive materials used for the transparent layers 17R, 17G, 17B include ITO or indium-zinc oxide (IZO).

[0085] A laminate (second electrode) consisting of metal layer 14R, transparent layer 15R, metal layer 16R, transparent layer 17R, and metal layer 19R serves as a cathode electrode paired with electrode layer 12R and also functions as a reflective layer. A laminate (second electrode) consisting of metal layer 14G, transparent layer 15G, metal layer 16G, transparent layer 17G, and metal layer 19G serves as a cathode electrode paired with electrode layer 12G and also functions as a reflective layer. A laminate (second electrode) consisting of metal layer 14B, transparent layer 15B, metal layer 16B, transparent layer 17B, and metal layer 19B serves as a cathode electrode paired with electrode layer 12B and also functions as a reflective layer.

[0086] The metal layers 19R, 19G, and 19B are formed from a metallic material with high reflectivity. Examples of metallic materials used for metal layers 19R, 19G, and 19B include magnesium (Mg), silver (Ag), or alloys thereof. The total thickness of metal layers 14R, 14G, and 14B, metal layers 16R, 16G, and 16B, and metal layers 19R, 19G, and 19B is, for example, 38 nm or more. In the interference structure, the thickness of metal layers 19R, 19G, and 19B is such that the interface on the light source side of metal layers 19R, 19G, and 19B and the interface on the light extraction side of metal layers 19R, 19G, and 19B can be considered substantially the same, for example, between 5 nm and 20 nm. Metal layer 19R is electrically connected to metal layer 16R via transparent layer 17R. Metal layer 19G is electrically connected to metal layer 16G via transparent layer 17G. The metal layer 19B is electrically connected to the metal layer 16B via the transparent layer 17B.

[0087] In this modified example, the fourth reflection interfaces S4R, S4G, and S4B are the light source-side interfaces of the metal layers 19R, 19G, and 19B. In this case, an interference structure is formed by a structure including the first reflection interface S1R, the second lower reflection interface S2R, the second upper reflection interface S2R', the third reflection interface S3R, and the fourth reflection interface S4R. Furthermore, an interference structure is formed by a structure including the first reflection interface S1G, the second lower reflection interface S2G, the second upper reflection interface S2G', the third reflection interface S3G, and the fourth reflection interface S4G. Furthermore, an interference structure is formed by a structure including the first reflection interface S1B, the second lower reflection interface S2B, the second upper reflection interface S2B', the third reflection interface S3B, and the fourth reflection interface S4B. Even in this case, the same effects as in the above embodiment can be obtained.

[0088] In this modified example, when the thickness of metal layers 14R, 14G, and 14B is 30 nm, the thickness of metal layers 16R, 16G, and 16B is 11 nm, and the thickness of metal layers 19R, 19G, and 19B is 10 nm (i.e., the total thickness of metal layers 14R, 14G, and 14B, 16R, 16G, and 16B, and 19R, 19G, and 19B is 51 nm), the value of ΔU'V' (the value on the vertical axis in Figure 8) at a viewing angle of 45° is 0.020. The graph of the viewing angle dependence at this time is roughly in agreement with that of Example 2 in Figure 8. A value of ΔU'V' (the value on the vertical axis in Figure 8) at a viewing angle of 45° being 0.020 or less is a condition for a relatively high-quality display. Therefore, by having a total thickness of 51 nm or less for metal layers 14R, 14G, 14B, 16R, 16G, 16B, and 19R, 19G, 19B, power supply performance can be improved without impairing the angle dependence of chromaticity.

[0089] [Variation B] In the above embodiment, for example, as shown in Figure 10, each light-emitting part (red light-emitting part 10R, green light-emitting part 10G, blue light-emitting part 10B) may have transparent layers 21R, 21G, 21B in contact with the transparent layers 17R, 17G, 17B and transparent layers 18R, 18G, 18B between the transparent layers 17R, 17G, 17B and transparent layers 18R, 18G, 18B.

[0090] The transparent layers 21R, 21G, and 21B are formed from, for example, a transparent dielectric material. Examples of transparent dielectric materials used for transparent layers 21R, 21G, and 21B include silicon oxide (SiO2), silicon oxynitride (SiON), or silicon nitride (SiN). The interface between transparent layers 17R, 17G, and 17B and transparent layers 21R, 21G, and 21B is a reflective interface (fourth reflective interface S4R, S4G, and S4B) due to the refractive index difference between transparent layers 17R, 17G, and 17B and transparent layers 21R, 21G, and 21B. The fourth reflective interface S4R, S4G, and S4B is composed of an interface with a refractive index difference of 0.15 or more, for example. The interface between the transparent layers 21R, 21G, 21B and the transparent layers 18R, 18G, 18B is a reflective interface (fifth reflective interface S5R, S5G, S5B) due to the refractive index difference between the transparent layers 21R, 21G, 21B and the transparent layers 18R, 18G, 18B. The fifth reflective interface S5R, S5G, S5B is composed of an interface with a refractive index difference of 0.15 or more, for example. The thickness of the transparent layers 21R, 21G, 21B is, for example, 50 nm to 1000 nm. The transparent layers 21R, 21G, 21B may be formed from, for example, a transparent conductive material, a transparent insulating material, a resin material, or glass.

[0091] An interference structure is formed by a structure including a first reflection interface S1R, a second lower reflection interface S2R, a second upper reflection interface S2R', a third reflection interface S3R, a fourth reflection interface S4R, and a fifth reflection interface S5R. An interference structure is formed by a structure including a first reflection interface S1G, a second lower reflection interface S2G, a second upper reflection interface S2G', a third reflection interface S3G, a fourth reflection interface S4G, and a fifth reflection interface S5G. An interference structure is formed by a structure including a first reflection interface S1B, a second lower reflection interface S2B, a second upper reflection interface S2B', a third reflection interface S3B, a fourth reflection interface S4B, and a fifth reflection interface S5B.

[0092] In this modified example, the addition of reflection at the fifth reflection interfaces S5R, S5G, and S5B allows the peak profiles of the light spectra generated in the red light-emitting layer 131R, the green light-emitting layer 131G, and the blue light-emitting layer 131B to be adjusted to a desired profile. This makes it possible to suppress, for example, abrupt changes in brightness and chromaticity with respect to angle. Furthermore, by giving the light spectra generated in the light-emitting layers a steep peak, for example, the light extraction efficiency can be increased. It is also possible to improve the chromaticity point.

[0093] <Examples of application> The following describes examples of applications for the light-emitting device 1 described in the above embodiments.

[0094] [Application example A] Figure 11 shows a schematic configuration example of a display device 2, which is an application example of the light-emitting device 1 according to the above embodiment and its modified form. Figure 12 shows an example of the circuit configuration of each pixel 18 provided in the display device 2. The display device 2 includes, for example, a light-emitting device 1, a controller 20, and a driver 30. The driver 30 is mounted, for example, on the outer edge portion of the light-emitting device 1. The light-emitting device 1 has a plurality of pixels 18 arranged in a matrix. The controller 20 and the driver 30 drive the light-emitting device 1 (the plurality of pixels 18) based on an externally input video signal Din and a synchronization signal Tin.

[0095] (Light-emitting device 1) The light-emitting device 1 displays an image based on an externally input video signal Din and a synchronization signal Tin, by having each pixel 18 actively matrix-driven by a controller 20 and a driver 30. The light-emitting device 1 has a plurality of scan lines WSL extending in the row direction, a plurality of signal lines DTL and a plurality of power lines DSL extending in the column direction, and a plurality of pixels 18 arranged in a matrix.

[0096] The scan line WSL is used for selecting each pixel 18, supplying a selection pulse to each pixel 18 to select each pixel 18 in predetermined units (e.g., pixel rows). The signal line DTL is used to supply a signal voltage Vsig corresponding to the video signal Din to each pixel 18, supplying a data pulse containing the signal voltage Vsig to each pixel 18. The power line DSL supplies power to each pixel 18.

[0097] The light-emitting device 1 includes a plurality of pixels 18, which emit red light, a plurality of pixels 18, and a plurality of pixels 18 that emit blue light. Hereinafter, the pixels 18 that emit red light will be referred to as pixels 18r, the pixels 18 that emit green light will be referred to as pixels 18g, and the pixels 18 that emit blue light will be referred to as pixels 18b. In the plurality of pixels 18, pixels 18r, 18g, and 18b constitute display pixels, which are the display units of a color image. Each display pixel may also include pixels 18 that emit other colors (for example, white or yellow). Therefore, the plurality of pixels 18 provided in the light-emitting device 1 are grouped into display pixels in predetermined numbers. In each display pixel, the plurality of pixels 18 are arranged in a row in a predetermined direction (for example, the row direction).

[0098] Each signal line DTL is connected to the output terminal of the horizontal selector 31, described later. Each pixel row is assigned, for example, one signal line DTL. Each scan line WSL is connected to the output terminal of the light scanner 32, described later. Each pixel row is assigned, for example, one scan line WSL. Each power line DSL is connected to the output terminal of the power supply. Each pixel row is assigned, for example, one power line DSL.

[0099] Each pixel 18 has a pixel circuit 18-1 and an organic electroluminescent unit 18-2. The organic electroluminescent unit 18-2 corresponds to the light-emitting units (for example, red light-emitting unit 10R, green light-emitting unit 10G, blue light-emitting unit 10B) according to the above embodiment and its modified form.

[0100] The pixel circuit 18-1 controls the illumination and extinction of the organic electroluminescent unit 18-2. The pixel circuit 18-1 has the function of holding the voltage written to each pixel 18 by write scanning. The pixel circuit 18-1 is composed of, for example, a drive transistor Tr1, a write transistor Tr2, and a holding capacitor Cs.

[0101] The writing transistor Tr2 controls the application of a signal voltage Vsig corresponding to the video signal Din to the gate of the driving transistor Tr1. Specifically, the writing transistor Tr2 samples the voltage of the signal line DTL and writes the voltage obtained from the sampling to the gate of the driving transistor Tr1. The driving transistor Tr1 is connected in series with the organic electroluminescent unit 18-2. The driving transistor Tr1 drives the organic electroluminescent unit 18-2. The driving transistor Tr1 controls the current flowing through the organic electroluminescent unit 18-2 according to the magnitude of the voltage sampled by the writing transistor Tr2. The retaining capacitor Cs maintains a predetermined voltage between the gate and source of the driving transistor Tr1. The retaining capacitor Cs has the role of maintaining the gate-source voltage Vgs of the driving transistor Tr1 at a constant level for a predetermined period of time. The pixel circuit 18-1 may have a circuit configuration in which various capacitors and transistors are added to the 2Tr1C circuit described above, or it may have a circuit configuration different from the 2Tr1C circuit described above.

[0102] Each signal line DTL is connected to the output terminal of the horizontal selector 31 (described later) and to the source or drain of the write transistor Tr2. Each scan line WSL is connected to the output terminal of the write scanner 32 (described later) and to the gate of the write transistor Tr2. Each power line DSL is connected to the power supply circuit and to the source or drain of the drive transistor Tr1.

[0103] The gate of the writing transistor Tr2 is connected to the scan line WSL. The source or drain of the writing transistor Tr2 is connected to the signal line DTL. The terminal of the source and drain of the writing transistor Tr2 that is not connected to the signal line DTL is connected to the gate of the driving transistor Tr1. The source or drain of the driving transistor Tr1 is connected to the power line DSL. The terminal of the source and drain of the driving transistor Tr1 that is not connected to the power line DSL is connected to the anode 21 of the organic electroluminescent unit 18-2. One end of the retaining capacitor Cs is connected to the gate of the driving transistor Tr1. The other end of the retaining capacitor Cs is connected to the terminal of the source and drain of the driving transistor Tr1 that is on the side of the organic electroluminescent unit 18-2.

[0104] (Driver 30) The driver 30 includes, for example, a horizontal selector 31 and a light scanner 32. The horizontal selector 31 applies an analog signal voltage Vsig input from the controller 20 to each signal line DTL, for example, in response to (synchronously with) the input of a control signal. The light scanner 32 scans a plurality of pixels 18 at predetermined units.

[0105] (Controller 20) Next, the controller 20 will be described. The controller 20 performs a predetermined correction on the digital video signal Din input from an external source, and generates a signal voltage Vsig based on the resulting video signal. The controller 20 outputs the generated signal voltage Vsig to the horizontal selector 31. The controller 20 outputs control signals to each circuit in the driver 30 in response to (synchronized with) the synchronization signal Tin input from an external source.

[0106] In this application example, the light-emitting device 1 is used as a display panel for displaying images. This makes it possible to provide a display device 2 with excellent display quality and minimal angle dependence of brightness and chromaticity, even when the light-emitting device 1 is large.

[0107] [Application example B] The display device 2 according to the above application example A can be used in various types of electronic devices. Figure 13 shows a perspective view of an electronic device 3 to which the display device 2 according to the above application example A is applied. The electronic device 3 is, for example, a sheet-type personal computer with a display surface 320 on the main surface of a housing 310. The electronic device 3 is equipped with the display device 2 according to the above application example A on the display surface 320 of the electronic device 3. The display device 2 according to the above application example A is positioned so that the image display surface faces outward. In this application example, since the display device 2 according to the above application example A is provided on the display surface 320, even if the display surface 320 is large, it is possible to provide an electronic device 3 with excellent display quality and small angle dependence of brightness and chromaticity.

[0108] [Application example C] The following describes examples of applications of the light-emitting device 1 according to the above embodiment and its modified form. The light-emitting device 1 according to the above embodiment and its modified form can be applied as a light source for lighting devices in all fields, such as tabletop or floor-standing lighting devices, or indoor lighting devices.

[0109] Figure 14 shows the appearance of an indoor lighting device to which the light-emitting device 1 according to the above embodiment and its modified form is applied. This lighting device has, for example, a lighting unit 410 which includes the light-emitting device 1 according to the above embodiment and its modified form. The lighting units 410 are arranged on the ceiling 420 of the building in appropriate numbers and at appropriate intervals. Depending on the application, the lighting units 410 can be installed not only on the ceiling 420 but also on walls 430 or floors (not shown), or any other location.

[0110] In these lighting devices, illumination is performed by light from the light-emitting device 1 according to the above embodiment and its modified form. This makes it possible to realize a lighting device with high illumination quality and small angle dependence of luminance and chromaticity.

[0111] The present disclosure has been described above with reference to embodiments, but the present disclosure is not limited to these embodiments and can be modified in various ways. Furthermore, the effects described herein are merely illustrative. The effects of the present disclosure are not limited to those described herein. The present disclosure may have effects other than those described herein.

[0112] Furthermore, this disclosure can also take the following form. (1) A plurality of organic electroluminescent units comprising a first reflective layer, an organic light-emitting layer, and a second reflective layer in this order, A light extraction surface from which light emitted from each of the organic electroluminescent units is extracted via the second reflective layer, A laminated section is provided between each of the organic electroluminescent sections and the light extraction surface, and consists of multiple types of transparent material layers different from the metal reflective film. Equipped with, The second reflective layer includes a first metal layer, a transparent layer, and a second metal layer that is thinner than the first metal layer, in this order from the organic light-emitting layer side. In each of the organic electroluminescent sections, an interference structure is formed by a structure including the reflective interface A of the first reflective layer on the organic luminescent layer side, the reflective interface B of the first metal layer on the organic luminescent layer side, the reflective interface C of the first metal layer on the light extraction surface side, the reflective interface D of the second metal layer on the organic luminescent layer side, and one or more reflective interfaces E formed by the refractive index difference within the laminated section. Light-emitting device. (2) A plurality of organic electroluminescent units comprising a first reflective layer, an organic light-emitting layer, and a second reflective layer in this order, A light extraction surface from which light emitted from each of the organic electroluminescent units is extracted via the second reflective layer. Equipped with, The second reflective layer includes, in this order from the organic light-emitting layer side, a first metal layer, a first transparent layer, a second metal layer thinner than the first metal layer, a second transparent layer, and a third metal layer thinner than the first metal layer. In each of the organic electroluminescent sections, an interference structure is formed by a structure including the reflective interface A of the first reflective layer on the organic luminescent layer side, the reflective interface B of the first metal layer on the organic luminescent layer side, the reflective interface C of the first metal layer on the light extraction surface side, the reflective interface D of the second metal layer on the organic luminescent layer side, and the reflective interface E of the third metal layer on the organic luminescent layer side. Light-emitting device. (3) The optical distance between the reflective interface B and the reflective interface D is less than or equal to the central wavelength of the light emitted from the corresponding organic light-emitting layer. The light-emitting device described in (1) or (2). (4) The plurality of organic electroluminescent units include a plurality of first organic electroluminescent units and a plurality of second organic electroluminescent units. In each of the first organic electroluminescent section and each of the second organic electroluminescent section, The interference structure is configured to satisfy the following equations (a) to (j). A light-emitting device as described in any one of (1) to (3). 2La1 / λa1+φa1 / (2π)=Na...(a) λa-150 < λa1 < λa+80 ... (b) 2La2 / λa2+φa2 / (2π)=Ma...(c) λa-80 < λa2 < λa+80 ... (d) 2La2' / λa2'+φa2' / (2π)=Ma+1 / 2···(e) λa-80 < λa2' < λa+80 ···(f) 2La3 / λa3+φa3 / (2π)=Ka+1 / 2···(g) λa-150 < λa3 < λa+150 ... (h) 2La4 / λa4+φa4 / (2π)=Kd+1 / 2···(i) λa-150 < λa4 < λa+150 ... (j) La1: Optical distance between the reflective interface A and the light-emitting center of the organic light-emitting layer of the first organic electroluminescent portion. La2: Optical distance between the reflective interface B and the light emission center of the organic light emission layer of the first organic electroluminescent portion. La2': Optical distance between the reflective interface C and the light emission center of the organic light emission layer of the first organic electroluminescent portion. La3: Optical distance between the reflective interface D and the light emission center of the organic light emission layer of the first organic electroluminescent portion. La4: Optical distance between the reflective interface E and the light emission center of the organic light emission layer of the first organic electroluminescent portion. φa1: Phase change when light emitted from the organic light-emitting layer is reflected at the reflective interface A in the first organic electroluminescent unit. φa2: Phase change when light emitted from the organic light-emitting layer is reflected at the reflective interface B in the first organic electroluminescent unit. φa2': Phase change when light emitted from the organic light-emitting layer is reflected at the reflective interface C in the first organic electroluminescent unit. φa3: Phase change when light emitted from the organic light-emitting layer is reflected at the reflective interface D in the first organic electroluminescent unit. φa4: Phase change when light emitted from the organic light-emitting layer is reflected at the reflective interface E in the first organic electroluminescent unit. λa: Center wavelength of the emission spectrum of the organic light-emitting layer in the first organic electroluminescent unit. λa1: Wavelength satisfying equation (b) λa2: Wavelength satisfying equation (d) λa2': wavelength satisfying equation (f) λa3: Wavelength satisfying equation (h) λa4: Wavelength satisfying equation (j) Na, Ma, Ka, Kd: integers greater than or equal to 0. (5) In each of the first organic electroluminescent section and each of the second organic electroluminescent section, The microcavity structure is configured to satisfy the following equations (k) to (t). (4) The light-emitting device described above. 2Lc1 / λc1+φc1 / (2π)=Nc...(k) λc-150 < λc1 < λc+80 ... (l) 2Lc2 / λc2+φc2 / (2π)=Mc...(m) λc-80 < λc² < λc+80 ... (n) 2Lc2' / λc2'+φc2' / (2π)=Mc+1 / 2···(o) λc-80 < λc² < λc+80 ... (p) 2Lc3 / λc3+φc3 / (2π)=Kc...(q) λc-150 < λc3 < λc+150 ... (r) 2Lc4 / λc4+φc4 / (2π)=Kf...(s) λc-150 < λc4 < λc+150 ... (t) Lc1: Optical distance between the reflective interface A and the light-emitting center of the organic light-emitting layer of the second organic electroluminescent portion. Lc2: Optical distance between the reflective interface B and the light emission center of the organic light emission layer of the second organic electroluminescent portion. Lc2': Optical distance between the reflective interface C and the light emission center of the organic light emission layer of the second organic electroluminescent portion. Lc3: Optical distance between the reflective interface D and the light-emitting center of the organic light-emitting layer of the second organic electroluminescent portion. Lc4: Optical distance between the reflective interface E and the light-emitting center of the organic light-emitting layer of the second organic electroluminescent portion. φc1: Phase change when light emitted from the organic light-emitting layer is reflected at the reflective interface A in the second organic electroluminescent unit. φc2: Phase change when light emitted from the organic light-emitting layer is reflected at the reflective interface B in the second organic electroluminescent unit. φc2': Phase change when light emitted from the organic light-emitting layer is reflected at the reflective interface C in the second organic electroluminescent unit. φc3: Phase change when light emitted from the organic light-emitting layer is reflected at the reflective interface D in the second organic electroluminescent unit. φc4: Phase change when light emitted from the organic light-emitting layer is reflected at the reflective interface E in the second organic electroluminescent unit. λc: Center wavelength of the emission spectrum of the organic light-emitting layer in the second organic electroluminescent unit. λc1: Wavelength satisfying equation (l) λc2: Wavelength satisfying equation (n) λc²': wavelength satisfying equation (p) λc3: Wavelength satisfying equation (r) λc4: Wavelength satisfying equation (t) Nc, Mc, Kc, Kf: integers greater than or equal to 0. (6) The plurality of organic electroluminescent units include a plurality of first organic electroluminescent units that emit light in a first wavelength band and a plurality of second organic electroluminescent units that emit light in a second wavelength band with a shorter wavelength than the first wavelength band. In each of the first organic electroluminescent section and each of the second organic electroluminescent section, The interference structure is configured such that the reflective interface A and reflective interface B enhance light in the first wavelength band and the second wavelength band, respectively; the reflective interface C weakens light in the first wavelength band and the second wavelength band, respectively; and the reflective interface D and reflective interface E weaken light in the first wavelength band and enhance light in the second wavelength band. A light-emitting device as described in any one of (1) to (5). (7) The total thickness of the first and second metal layers is 44 nm or less. A light-emitting device as described in any one of (1) to (6). (8) The transparent layer is formed of a transparent conductive material. The first metal layer, the transparent layer, and the second metal layer are electrically connected to each other and function as electrodes on the light extraction surface side. (1) The light-emitting device described above. (9) The first transparent layer and the second transparent layer are formed from a transparent conductive material. The first metal layer, the first transparent layer, the second metal layer, the second transparent layer, and the third metal layer are electrically connected to each other and function as electrodes on the light extraction surface side. (2) The light-emitting device described above. (10) The aforementioned organic light-emitting layer is a printed layer. A light-emitting device as described in any one of (1) to (9). [Explanation of symbols]

[0113] 1...Light-emitting device, 2...Display device, 3...Electronic device, 10R...Red light-emitting part, 10G...Green light-emitting part, 10B...Blue light-emitting part, 11...Substrate, 12,12R,12G,12B...Electrode layer, 13R...Red organic layer, 13G...Green organic layer, 13B...Blue organic layer, 131R...Red light-emitting layer, 131G...Green light-emitting layer, 131B...Blue light-emitting layer, 14R,14G,14B...Metal layer, 15R,15G,15B...Transparent layer, 16R,16G,16B...Metal layer, 17R,17G,17B...Transparent layer, 18R,18G,18B...Transparent layer, 19R,19G,19B...Metal layer, 18...Pixel, 18-1...Pixel circuit, 18-2...Organic electroluminescent part, 20...Controller, 30...Driver, 31...Horizontal sensor Recta, 32...light scanner, 310...casing, 320...display surface, 410...lighting unit, 420...ceiling, 430...wall, OR, OG, OB...light source, LR...red light, LG...green light, LB...blue light, La1, La2, La3, La4, La5, Lb1, Lb2, Lb3, Lb4, Lb5, Lc1, Lc2, Lc3, Lc4, Lc 5...Optical distance, S1R,S1G,S1B...First reflective interface, S2R,S2G,S2B...Second lower reflective interface, S2R',S2G',S2B'...Second upper reflective interface, S 3R,S3G,S3B...Third reflection interface, S4R,S4G,S4B...Fourth reflection interface, S5R,S5G,S5B...Fifth reflection interface, SDR,SDG,SDB...Light extraction surface.

Claims

1. A plurality of organic electroluminescent units comprising a first reflective layer, an organic light-emitting layer, and a second reflective layer in this order, A light extraction surface from which light emitted from each of the organic electroluminescent units is extracted via the second reflective layer. Equipped with, The second reflective layer includes, in this order from the organic light-emitting layer side, a first metal layer, a first transparent layer, a second metal layer thinner than the first metal layer, a second transparent layer, and a third metal layer thinner than the first metal layer. In each of the organic electroluminescent sections, an interference structure is formed by a structure including the reflective interface A of the first reflective layer on the organic luminescent layer side, the reflective interface B of the first metal layer on the organic luminescent layer side, the reflective interface C of the first metal layer on the light extraction surface side, the reflective interface D of the second metal layer on the organic luminescent layer side, and the reflective interface E of the third metal layer on the organic luminescent layer side. Light-emitting device.

2. The optical distance between the reflective interface B and the reflective interface D is less than or equal to the central wavelength of the light emitted from the corresponding organic light-emitting layer. The light-emitting device according to claim 1.

3. The plurality of organic electroluminescent units include a plurality of first organic electroluminescent units and a plurality of second organic electroluminescent units. In each of the first organic electroluminescent section and each of the second organic electroluminescent section, The interference structure is configured to satisfy the following equations (a) to (j). The light-emitting device according to claim 1 or claim 2. 2La1 / λa1+φa1 / (2π)=Na...(a) λa-150<λa1<λa+80...(b) 2La2 / λa2+φa2 / (2π)=Ma...(c) λa-80<λa2<λa+80...(d) 2La2' / λa2'+φa2' / (2π)=Ma+1 / 2...(e) λa-80<λa2'<λa+80...(f) 2La3 / λa3+φa3 / (2π)=Ka+1 / 2...(g) λa-150<λa3<λa+150...(h) 2La4 / λa4+φa4 / (2π)=Kd+1 / 2...(i) λa-150<λa4<λa+150...(j) La1: Optical distance between the reflective interface A and the light-emitting center of the organic light-emitting layer of the first organic electroluminescent unit. La2: Optical distance between the reflective interface B and the light-emitting center of the organic light-emitting layer of the first organic electroluminescent unit. La2': Optical distance between the reflective interface C and the light-emitting center of the organic light-emitting layer of the first organic electroluminescent unit. La3: Optical distance between the reflective interface D and the light-emitting center of the organic light-emitting layer of the first organic electroluminescent unit. La4: Optical distance between the reflective interface E and the light-emitting center of the organic light-emitting layer of the first organic electroluminescent unit. φa1: Phase change when light emitted from the organic light-emitting layer is reflected at the reflective interface A in the first organic electroluminescent unit. φa2: Phase change when light emitted from the organic light-emitting layer is reflected at the reflective interface B in the first organic electroluminescent unit. φa2': Phase change when light emitted from the organic light-emitting layer is reflected at the reflective interface C in the first organic electroluminescent unit. φa3: Phase change when light emitted from the organic light-emitting layer is reflected at the reflective interface D in the first organic electroluminescent unit. φa4: Phase change when light emitted from the organic light-emitting layer is reflected at the reflective interface E in the first organic electroluminescent unit. λa: Center wavelength of the emission spectrum of the organic light-emitting layer in the first organic electroluminescent unit. λa1: Wavelength satisfying equation (b) λa2: Wavelength satisfying equation (d) λa²': Wavelength satisfying equation (f) λa3: Wavelength satisfying equation (h) λa4: Wavelength satisfying equation (j) Na, Ma, Ka, Kd: integers greater than or equal to 0.

4. In each of the first organic electroluminescent section and each of the second organic electroluminescent section, The interference structure is configured to satisfy the following equations (k) to (t). The light-emitting device according to claim 3. 2Lc1 / λc1+φc1 / (2π)=Nc...(k) λc-150<λc1<λc+80...(l) 2Lc2 / λc2+φc2 / (2π)=Mc...(m) λc-80<λc2'<λc+80...(n) 2Lc2' / λc2'+φc2' / (2π)=Mc+1 / 2...(o) λc-80<λc2'<λc+80...(p) 2Lc3 / λc3+φc3 / (2π)=Kc...(q) λc-150<λc3<λc+150...(r) 2Lc4 / λc4+φc4 / (2π)=Kf...(s) λc-150<λc4<λc+150...(t) Lc1: Optical distance between the reflective interface A and the light-emitting center of the organic light-emitting layer of the second organic electroluminescent unit. Lc2: Optical distance between the reflective interface B and the light-emitting center of the organic light-emitting layer of the second organic electroluminescent unit. Lc2': Optical distance between the reflective interface C and the light-emitting center of the organic light-emitting layer of the second organic electroluminescent unit. Lc3: Optical distance between the reflective interface D and the light-emitting center of the organic light-emitting layer of the second organic electroluminescent unit. Lc4: Optical distance between the reflective interface E and the light-emitting center of the organic light-emitting layer of the second organic electroluminescent unit. φc1: Phase change when light emitted from the organic light-emitting layer is reflected at the reflective interface A in the second organic electroluminescent unit. φc2: Phase change when light emitted from the organic light-emitting layer is reflected at the reflective interface B in the second organic electroluminescent unit. φc2': Phase change when light emitted from the organic light-emitting layer is reflected at the reflective interface C in the second organic electroluminescent unit. φc3: Phase change when light emitted from the organic light-emitting layer is reflected at the reflective interface D in the second organic electroluminescent unit. φc4: Phase change when light emitted from the organic light-emitting layer is reflected at the reflective interface E in the second organic electroluminescent unit. λc: Center wavelength of the emission spectrum of the organic light-emitting layer in the second organic electroluminescent unit. λc1: Wavelength satisfying equation (l) λc²: Wavelength satisfying equation (n) λc²': Wavelength satisfying equation (p) λc3: Wavelength satisfying equation (r) λc4: Wavelength satisfying equation (t) Nc, Mc, Kc, Kf: integers greater than or equal to 0.

5. The plurality of organic electroluminescent units include a plurality of first organic electroluminescent units that emit light in a first wavelength band and a plurality of second organic electroluminescent units that emit light in a second wavelength band with a shorter wavelength than the first wavelength band. In each of the first organic electroluminescent section and each of the second organic electroluminescent section, The interference structure is configured such that the reflective interface A and reflective interface B enhance light in the first wavelength band and the second wavelength band, respectively; the reflective interface C weakens light in the first wavelength band and the second wavelength band, respectively; and the reflective interface D and reflective interface E weaken light in the first wavelength band and enhance light in the second wavelength band. A light-emitting device according to any one of claims 1 to 4.

6. The total thickness of the first metal layer and the second metal layer is 44 nm or less. A light-emitting device according to any one of claims 1 to 5.

7. The first transparent layer and the second transparent layer are formed from a transparent conductive material. The first metal layer, the first transparent layer, the second metal layer, the second transparent layer, and the third metal layer are electrically connected to each other and function as electrodes on the light extraction surface side. The light-emitting device according to claim 1.

8. The aforementioned organic light-emitting layer is a printed layer. A light-emitting device according to any one of claims 1 to 7.

9. The total thickness of the first metal layer, the second metal layer, and the third metal layer is 51 nm or less. A light-emitting device according to any one of claims 1 to 8.

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