Infrared filter film layer and infrared filter structure

Abstract

To provide an infrared filter film layer with stable quality and less light wavelength drift during use.SOLUTION: An infrared filter film layer disclosed herein comprises multiple silicon-based layers, multiple isolation layers, and multiple oxide layers that are laminated together. The multiple isolation layers are disposed between the multiple silicon-based layers and the multiple oxide layers. Such a configuration provides the infrared filter film layer with good quality with an advantage of less wavelength drift. The present invention also provides an infrared filter structure comprising a light-transmissive substrate and the infrared filter film layer.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to an infrared filter film layer, and particularly to an infrared filter film layer of an interference filter and an infrared filter structure.

Background Art

[0002] Optical coatings are widely applied in people's lives. For example, they are used for light shielding, filtering, waterproofing, and even for appearance design.

[0003] Generally, an optical coating structure has many multi-layer interference optical thin films and is usually completed using two or more types of materials. In the filter design of the infrared wavelength band, there are, for example, long-wave pass filters, short-wave pass filters, or band-pass filters. Since the wavelength band used is infrared, when it is necessary to suppress the visible light wavelength band, more and thicker film layers are required in the design, which increases the manufacturing cost. The multi-layer interference optical thin films usually adopt a design of alternately laminating high-refractive-index and low-refractive-index oxides. For example, tantalum pentoxide, titanium dioxide, or niobium pentoxide and silicon dioxide are used in combination. However, with this design, a greater thickness is required to block the visible light wavelength band, so the manufacturing cost of the coating is high. Also, in existing technologies, a design of alternately laminating hydrides and oxides in multi-layer interference optical thin films is also adopted. For example, silicon hydride and silicon dioxide are used, but since the use of hydrogen is restricted in the manufacturing process, production is inconvenient.

[0004] Regarding the filter film, usually, a method of coating an oxide layer on a silicon layer to reduce the film thickness is adopted. However, the oxygen atoms in the oxide layer are likely to bond with the silicon in the silicon layer, and the quality of the generated optical film becomes unstable, and there is a problem that wavelength drift is likely to occur during use. Therefore, improving the quality of the infrared filter film layer through structural design and reducing the problem of wavelength drift has become one of the important issues to be solved in this business. [Overview of the project] [Problems that the invention aims to solve]

[0005] The technical problem that this invention aims to solve is to provide an infrared filter film layer that compensates for the shortcomings of existing technologies, and has the advantages of stable quality and less drift in the optical wavelength during use. [Means for solving the problem]

[0006] above To solve the aforementioned technical problems, one of the technical solutions according to the present invention is at least one Silicon film layer The objective is to provide an infrared filter film layer composed of at least one isolation layer and at least one oxide layer. The at least one isolation layer is at least one Silicon film layer It is located between and at least one oxide layer.

[0007] According to feasible plans, the isolation layer is a nitride layer.

[0008] According to feasible plans, the material of the nitride layer is selected from the group consisting of silicon nitride (Si3N4), aluminum nitride (AlN), niobium nitride (NbN), tantalum nitride (TaN), and zirconium nitride (ZrN).

[0009] In the feasible solutions, the thickness of the isolation layer is between 6 nm and 150 nm.

[0010] In the feasible solution, the oxide layer is a silicon dioxide layer (SiO2).

[0011] In a feasible solution, an adhesive layer is defined in the base layer of the infrared filter film layer, and the adhesive layer is at least one Silicon film layer , at least one isolation layer or at least one oxide layer.

[0012] To solve the above-mentioned technical problems, another technical solution employed by the present invention is to provide an infrared filter structure including a light-transmitting substrate and an infrared filter film layer. The infrared filter film layer is coated on a first surface of the light-transmitting substrate.

[0013] In a feasible solution, the infrared filter structure has another infrared filter film layer coated on a second surface corresponding to a first surface of the light-transmitting substrate.

[0014] Light-transmitting substrates are manufactured from glass substrates, sapphire substrates, or resin substrates.

[0015] The beneficial effects of the present invention are, Silicon film layer Through a technical method that involves placing an isolation layer between the oxide layer and the oxygen atoms of the oxide layer Silicon film layer This prevents intrusion and improves the stability of the infrared filter film layer. Furthermore, based on the technical solution of "using nitride for the isolation layer," the quality of the infrared filter film layer can be further improved, and the degree of optical wavelength drift during use can be reduced.

[0016] Another beneficial effect of the present invention is that, in certain embodiments, the provided infrared filter film layer is applied to an infrared laser radar, improving the impact of various environmental changes and enhancing the accuracy of optical reader detection.

[0017] To further understand the features and technical content of the invention, please refer to the detailed description of the present invention and the accompanying drawings below. However, the accompanying drawings provided are for reference and illustrative purposes only and are not intended to limit the scope of the claims of the present invention. [Brief explanation of the drawing]

[0018] [Figure 1] This is a schematic diagram of the structure of the infrared filter film layer of the first embodiment of the present invention. [Figure 2]It is a schematic diagram of the structure of the infrared filter film layer according to the second embodiment of the present invention. [Figure 3] It is a schematic diagram of the structure of the infrared filter film layer according to the third embodiment of the present invention. [Figure 4] It is a spectral simulation diagram in which the infrared filter film layer according to a specific embodiment of the present invention is applied to an antireflection film. [Figure 5] It is a spectral simulation diagram in which the infrared filter film layer according to a specific embodiment of the present invention is applied to a long-wave pass filter. [Figure 6] It is a spectral simulation diagram in which the infrared filter film layer according to a specific embodiment of the present invention is applied to a short-wave pass filter. [Figure 7] It is a spectral simulation diagram in which the infrared filter film layer according to a specific embodiment of the present invention is applied to a band-pass filter. [Figure 8] It is a schematic diagram of the infrared filter structure according to the first embodiment of the present invention. [Figure 9] It is a schematic diagram of the infrared filter structure according to the second embodiment of the present invention. [Figure 10] It is a schematic diagram of the infrared filter structure according to the third embodiment of the present invention.

Embodiments for Carrying Out the Invention

[0019] Embodiments relating to the infrared filter film layer and infrared filter structure disclosed in this invention will be described below. Those skilled in the art will be able to understand the merits and effects of this invention from the published content herein. This invention can be carried out or applied by other different embodiments. Each section herein can also be modified and altered in equal measure from various viewpoints or applications, as long as it does not deviate from the spirit of this invention. Furthermore, the drawings of this invention are for simple and schematic purposes only and do not represent actual dimensions. Further technical details of the invention will be described in the following embodiments, but the published content does not limit this invention. Furthermore, the term "or" as used herein may include any one or more combinations of the relevant items, depending on the actual situation.

[0020] Furthermore, the term "or" as used herein may, as appropriate, include any or a combination of the related enumerated items.

[0021] Please refer to Figure 1. This is a schematic diagram of the structure of the infrared filter film layer 100A of the first embodiment of the present invention. The infrared filter film layer 100A is Silicon film layer 11. Includes an isolation layer 12 and an oxide layer 13, wherein the isolation layer 12 is Silicon film layer It is located between 11 and the oxide layer 13. In some embodiments, Silicon film layer 11. There is at least one isolation layer 12 and oxide layer 13. Silicon film layer A separation layer 12 is always present between layer 11 and the oxide layer 13 (details will be described later).

[0022] In the embodiment shown in Figure 1, Silicon film layer 11 is an adhesive layer, the bottom surface of which defines the adhesive surface F, which is plated, bonded, or attached to the surface of, for example, a glass plate or a resin plate (e.g., polycarbonate (PC) resin). In some other embodiments, the base layer of the infrared filter film layer is an oxide layer 13 (i.e., an adhesive layer), and the surface of the oxide layer 13 defines the adhesive surface F. Furthermore, in some embodiments where the base layer of the infrared filter film layer is an isolation layer 12 (i.e., an adhesive layer), the surface of the isolation layer 12 defines the adhesive surface F.

[0023] Silicon film layer The main material of 11 is silicon (Si). In some embodiments, the oxide layer 13 includes, but is not limited to, a silicon dioxide layer (SiO2). The isolation layer 12 is Silicon film layer 11 and the oxide layer 13 are separated, and the oxygen atoms of the oxide layer Silicon film layer To prevent spread to 11. Isolation layer 12 is Silicon film layer A material having good adhesion to layer 11 and oxide layer 13 is employed, and in some embodiments, the isolation layer 12 is a nitride layer. For example, the material of the nitride layer is selected from the group consisting of silicon nitride (Si3N4), aluminum nitride (AlN), niobium nitride (NbN), tantalum nitride (TaN), and zirconium nitride (ZrN). In some embodiments, the thickness of the isolation layer 12 is between 6 and 150 nm.

[0024] Please refer to Figure 2. This is a schematic diagram of the structure of the infrared filter film layer 100B of the second embodiment of the present invention. In this embodiment, Silicon film layer There are two layers 11 and two oxide layers 13, and three isolation layers 12, with each of the three isolation layers 12 being adjacent to another layer. Silicon film layer It is placed between 11 and the oxide layer 13. Silicon film layer 11. There is no limit to the number of isolation layers 12 and oxide layers 13, Silicon film layer It is necessary to always place an isolation layer 12 between 11 and the oxide layer 13, thereby separating the oxygen atoms of the oxide layer 13 Silicon film layer To improve diffusion to 11. In this embodiment, the infrared filter film layer 100B is from the base layer Silicon film layer 11, isolation layer 12, oxide layer 13, isolation layer 12, Silicon film layer 11, the isolation layer 12, and the oxide layer 13 are stacked in that order. Furthermore, the present invention does not impose any limitations on the overall thickness of the infrared filter film layer. It can be modified according to the requirements of the user or manufacturer, and for example, the entire infrared filter film layer may consist of multiple stacks of the infrared filter film layer 100A shown in Figure 1. Silicon film layer A separation layer 12 is always installed between layer 11 and the oxide layer 13.

[0025] Please refer to Figure 3. This is a schematic diagram of the structure of the infrared filter film layer 100C of the third embodiment of the present invention. In this embodiment, Silicon film layer There are two layers each of 11 and oxide layer 13, and three isolation layers 12. The difference from the second embodiment is that in the third embodiment, the infrared filter film layer 100C has the surface of the oxide layer 13 as the bonding surface F. The laminated structure consists of the oxide layer 13, isolation layer 12, and so on, from the base layer upwards. Silicon film layer 11, isolation layer 12, oxide layer 13, isolation layer 12, and Silicon film layer The order is 11. In some embodiments, the bonding surface F is the surface of the oxide layer 13, and the entire infrared filter film layer consists of multiple oxide layers 13, multiple isolation layers 12, and multiple Silicon film layer It is composed of a laminate consisting of 11, and each of the multiple isolation layers 12 is an oxide layer 13 Silicon film layer It exists between 11.

[0026] In some embodiments, the isolation layer 12 is used as an adhesive layer, and its surface is used as the adhesive surface F. The adhesive surface F is plated onto the surface of the target object and then bonded or attached. At this time, the infrared filter film layer is arranged from the bottom upwards, along with the isolation layer 12. Silicon film layer 11, isolation layer 12, oxide layer 13, isolation layer 12, and Silicon film layer The layers are stacked in the order of 11 (for example, 3 isolation layers 12, 2 Silicon film layer 11 and the oxide layer 13 are examples. Throughout the entire infrared filter film layer, Silicon film layer An isolation layer 12 is always placed between layer 11 and the oxide layer 13.

[0027] In some embodiments, the isolation layer 12 is used as an adhesive layer, and its surface is used as the adhesive surface F. The adhesive surface F is plated onto the surface of the target object and then bonded or attached. The difference from the embodiments described above is that the layer adjacent to the isolation layer 12 is an oxide layer 13. For example, there are three isolation layers 12, two oxide layers 13, and Silicon film layerTo give an example, at this time, the infrared filter film layer consists of an isolation layer 12, an oxide layer 13, and another isolation layer 12, starting from the base layer and moving upwards. Silicon film layer 11, isolation layer 12, and oxide layer 13 are stacked in that order. The oxide layer 13 and Silicon film layer A isolation layer 12 must be placed between layers 11.

[0028] Please refer to Figure 4. This is a simulation diagram of the optical spectrum of an infrared filter film layer acting as an anti-reflection (AR) film, which is one embodiment of the present invention. The configuration of the infrared filter film layer is shown in Table 1 below: [Table 1]

[0029] In this embodiment, the total number of layers is 12, with the isolation layer 12 serving as the base layer. As shown in Figure 4, the transmittance of light waves with wavelengths from 1450 nm to 1650 nm is 99% or higher.

[0030] Please refer to Figure 5. This is a simulation diagram of the optical spectrum of an infrared filter film layer acting as a long-pass filter (LP), which is one embodiment of the present invention. The configuration of the infrared filter film layer is shown in Table 2 below. [Table 2]

[0031] In this embodiment, there are a total of 75 layers, with the isolation layer 12 serving as the base layer. As shown in Figure 5, the transmittance of light waves with wavelengths from 1530 nm to 1650 nm is 95% to 100%.

[0032] Please refer to Figure 6. This is a simulation diagram of the optical spectrum of an infrared filter film layer acting as a short-pass filter (SP), which is one embodiment of the present invention. The configuration of the infrared filter film layer is shown in Table 3 below. [Table 3]

[0033] In this embodiment, there are a total of 65 layers, with isolation layer 12 serving as the base layer. As shown in Figure 6, the transmittance of light waves with wavelengths from 1450 nm to 1600 nm is 95% to 100%.

[0034] Please refer to Figure 7. This is a simulation diagram of the optical spectrum of an infrared filter film layer acting as a band-pass filter (BP), which is a specific embodiment of the present invention. The configuration of the infrared filter film layer is shown in Table 4 below. [Table 4]

[0035] In this embodiment, there are a total of 68 layers, with the oxide layer 13 being the base layer. As shown in Figure 7, the transmittance of light waves with wavelengths from 1550 nm to 1580 nm is 99% or more.

[0036] Please refer to Figure 8. This is a schematic diagram showing an infrared filter structure 200A, which is a first embodiment of the present invention. In this embodiment, the infrared filter structure 200A consists of a light-transmitting substrate 2 and an infrared filter film layer, and the infrared filter film layer is made up of multiple Silicon film layer 11. Includes multiple isolation layers 12 and multiple oxide layers 13. Here, the infrared filter film layer is Silicon film layer 11 is used as an adhesive layer (hereinafter referred to as the first embodiment) and is located on the first surface 21 of the light-transmitting substrate 2. The infrared filter film layer is disposed on the light-transmitting substrate 2 by coating technology, and the present invention is not limited to the coating method. The light-transmitting substrate 2 is manufactured from, for example, a glass substrate. In some embodiments, the light-transmitting substrate 2 is manufactured from a resin substrate. Furthermore, in some embodiments, the light-transmitting substrate 2 is manufactured from a sapphire substrate.

[0037] Please refer to Figure 9. This is a schematic diagram of an infrared filter structure 200B, which is a second embodiment of the present invention. In this embodiment, the infrared filter film layer is a plurality Silicon film layer 11. The infrared filter film layer includes a plurality of isolation layers 12 and a plurality of oxide layers 13, where the oxide layer 13 is used as an adhesive layer (hereinafter referred to as the second embodiment) and is located on the first surface 21 of the light-transmitting substrate 2.

[0038] Based on some embodiments, in an infrared filter structure, the infrared filter film layer uses an isolation layer 12 as an adhesive layer, and the layer located on top of it Silicon film layer 11 (hereinafter referred to as the third embodiment) or oxide layer 13 (hereinafter referred to as the fourth embodiment).

[0039] Please refer to Figure 10. This is a schematic diagram of an infrared filter structure 200C, which is a third embodiment of the present invention. In this embodiment, the infrared filter structure 200C includes another infrared filter film layer on the second surface 22 of the light-transmitting substrate 2. The infrared filter film layer on the first surface 21 of the light-transmitting substrate 2 can be any of the first to fourth embodiments described above, and the infrared filter film layer on the second surface 22 of the light-transmitting substrate 2 can also be any of the first to fourth embodiments. Therefore, there are 16 possible combinations of infrared filter structures, which are designed according to the user's requirements, but the present invention is not limited to this method. Based on the embodiment shown in Figure 10, the first surface 21 of the light-transmitting substrate 2 has an infrared filter film layer of the first embodiment, and the second surface 22 has an infrared filter film layer of the third embodiment.

[0040] [Beneficial effects of the embodiment] The beneficial effect of the present invention is that the infrared filter film layer and infrared filter structure provided by the present invention are Silicon film layer Through a technical scheme that places an isolation layer between the oxide layer, the oxygen atoms of the oxide layer Silicon film layerThe purpose is to prevent intrusion and improve the stability of the infrared filter film layer. This improves the stability and reliability of the infrared filter film layer in the infrared region. Furthermore, the technical solution of "using nitride for the isolation layer" further improves the quality of the infrared filter film layer and reduces the degree of wavelength drift.

[0041] Another beneficial effect of the present invention in some embodiments is that the provided infrared filter film layer and infrared filter structure can be applied to infrared laser radar to improve the effects of various environmental changes and enhance the accuracy of optical radar detection.

[0042] The information disclosed above represents only preferred embodiments of the present invention and does not limit the scope of the claims. Therefore, all equivalent technical modifications made based on the specifications and accompanying drawings of the present invention are included within the scope of the claims. [Explanation of Symbols]

[0043] 100A-100C: Infrared filter film layer 11: Silicon film layer 12: Isolation layer, nitride layer 13: Oxide layer 200A-200C: Infrared filter structure 2: Light transmitting substrate 21: First surface 22: Second surface F: Adhesive surface

Claims

1. An infrared filter film layer comprising multiple silicon film layers, multiple isolation layers, and multiple oxide layers stacked together, There is always one isolation layer between adjacent silicon film layers and oxide layers. Each of the aforementioned silicon film layers is not a layer of nitrogen-doped hydrogenated amorphous silicon, but rather each of the aforementioned silicon film layers contains only silicon (Si), and each of the aforementioned silicon film layers is different from each of the aforementioned oxide layers. An infrared filter film layer characterized in that each of the isolation layers is a nitride layer.

2. Each of the materials in the nitride layer is silicon nitride (Si ３ N ４ The infrared filter film layer according to claim 1, wherein it is at least one selected from the group consisting of ), aluminum nitride (AlN), niobium nitride (NbN), tantalum nitride (TaN), and zirconium nitride (ZrN).

3. The infrared filter film layer according to claim 1, wherein the thickness of each of the isolation layers is 6 nm to 150 nm.

4. Each of the aforementioned oxide layers is a silicon dioxide layer (SiO ２ The infrared filter film layer according to claim 1, which is the same as the infrared filter film layer according to claim 1.

5. The infrared filter film layer according to claim 1, wherein an adhesive layer is defined in the base layer of the infrared filter film layer, and the adhesive layer is the silicon film layer, the isolation layer, or the oxide layer.

6. A light-transmitting substrate and An infrared filter film layer comprising multiple silicon film layers, multiple oxide layers, and multiple isolation layers laminated together, coated on the first surface of the light-transmitting substrate, wherein one isolation layer is always present between adjacent silicon film layers and oxide layers, Equipped with, Each of the aforementioned silicon film layers is not a layer of nitrogen-doped hydrogenated amorphous silicon, but rather each of the aforementioned silicon film layers contains only silicon (Si), and each of the aforementioned silicon film layers is different from each of the aforementioned oxide layers. An infrared filter structure characterized in that each of the isolation layers is a nitride layer.

7. The infrared filter structure according to claim 6, further comprising the infrared filter film layer coated on a second surface of the light-transmitting substrate that is opposite to the first surface.

8. The infrared filter structure according to claim 6, wherein the light-transmitting substrate is manufactured from a glass substrate, a sapphire substrate, or a resin substrate.

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