Semiconductor nanoparticles, methods for manufacturing the same, and light-emitting devices

Abstract

To provide semiconductor nanoparticles that exhibit a band edge emission and have a peak emission wavelength at short wavelengths.SOLUTION: A semiconductor nanoparticle comprises Ag, In, Ga, and S, features a chalcopyrite-type crystal structure, emits light with an emission peak wavelength in the range of 500 nm or more and less than 590 nm under light exposure, and exhibits an exciton peak in the absorption spectrum in the range of 450 nm or more and less than 590 nm.SELECTED DRAWING: Figure 4

Claims

[Claim 1] It contains Ag, in, Ga, and S, The composition has the following characteristics: the ratio of the number of Ga atoms to the total number of In and Ga atoms is 0.2 or more and 0.9 or less; the ratio of the number of Ag atoms to the total number of Ag, In and Ga atoms is 0.05 or more and 0.55 or less; and the ratio of the number of S atoms to the total number of Ag, In and Ga atoms is 0.6 or more and 1.6 or less; and the crystal structure is of the chalcopyrite type. Semiconductor nanoparticles that, upon light irradiation, emit light with an emission peak wavelength in the range of 500 nm to less than 590 nm, and whose exciton peak in the absorption spectrum is observed in the range of 450 nm to less than 590 nm. [Claim 2] The ratio of the number of Ag atoms to the total number of Ag, In, and Ga atoms is 0.3 or more and 0.55 or less. The semiconductor nanoparticle according to claim 1, having a composition in which the ratio of the number of Ga atoms to the total number of In and Ga atoms is 0.5 or more and 0.9 or less. [Claim 3] The ratio of the number of Ag atoms to the total number of Ag atoms, In atoms, and Ga atoms is 0.05 or more and 0.27 or less. The semiconductor nanoparticle according to claim 1, having a composition in which the ratio of the number of Ga atoms to the total number of In and Ga atoms is 0.25 or more and 0.75 or less. [Claim 4] The ratio of the number of Ag atoms to the total number of Ag atoms, In atoms, and Ga atoms is 0.05 or more and 0.4 or less. The semiconductor nanoparticle according to claim 1, having a composition in which the ratio of the number of Ga atoms to the total number of In and Ga atoms is 0.2 or more and 0.8 or less. [Claim 5] The core and A semiconductor nanoparticle according to any one of claims 1 to 4, comprising a semiconductor material having a bandgap energy greater than that of the core. [Claim 6] The semiconductor nanoparticle according to claim 5, wherein the semiconductor material comprises a group 13 element and a group 16 element. [Claim 7] The semiconductor nanoparticle according to claim 6, wherein the semiconductor material comprises at least Ga as the group 13 element. [Claim 8] The semiconductor nanoparticle according to claim 6 or 7, wherein the semiconductor material comprises at least S as the group 16 element. [Claim 9] A photoconversion member comprising semiconductor nanoparticles according to any one of claims 1 to 8. [Claim 10] The photoconversion member according to claim 9, further comprising at least one selected from the group consisting of semiconductor nanoparticles other than the aforementioned semiconductor nanoparticles, organic phosphors, and inorganic phosphors. [Claim 11] The light conversion member according to claim 9 or 10, which is a sheet-like member or a plate-like member. [Claim 12] A light conversion member according to any one of claims 9 to 11, A light-emitting device comprising a semiconductor light-emitting element having an emission peak wavelength of 400 nm or more and 490 nm or less. [Claim 13] A liquid crystal display device comprising the light-emitting device described in claim 12.

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