Light-emitting devices

Abstract

Provided is a new light-emitting device that has excellent convenience, usefulness, and reliability. This light emitting device comprises a first electrode, a second electrode, a first unit, and a first layer. The first unit is sandwiched between the first electrode and the second electrode, and is provided with a second layer, a third layer, and a fourth layer. The second layer is sandwiched between the third layer and the fourth layer, and includes a luminescent material. The fourth layer is sandwiched between the second layer and the second electrode, and includes a first organic compound. The first organic compound comprises a π-electron deficient heteroaromatic ring skeleton and a π-electron rich heteroaromatic ring skeleton, and has a HOMO level in the range of -6.0 to -5.6 eV. The first layer is sandwiched between the first electrode and the first unit, is in contact with the first electrode, and includes a second organic compound and a third organic compound.

Description

[Technical Field]

[0001] One aspect of the present invention relates to a light-emitting device, a light-emitting apparatus, a display device, an electronic device, or a lighting apparatus.

[0002] Furthermore, one aspect of the present invention is not limited to the above-mentioned technical field. The technical field of one aspect of the invention disclosed herein relates to a product, method, or method of manufacture. Alternatively, one aspect of the present invention relates to a process, machine, manufacture, or composition of matter. More specifically, examples of the technical field of one aspect of the present invention disclosed herein include semiconductor devices, display devices, light-emitting devices, energy storage devices, memory devices, methods for driving them, or methods for manufacturing them. [Background technology]

[0003] The practical application of light-emitting devices (organic electroluminescent devices) that utilize electroluminescence (EL) using organic compounds is progressing. The basic structure of these light-emitting devices is an organic compound layer (EL layer) containing a light-emitting material sandwiched between a pair of electrodes. By applying a voltage to this device, carriers (holes and electrons) are injected, and by utilizing the recombination energy of these carriers, light emission can be obtained from the light-emitting material.

[0004] Because these light-emitting devices are self-emissive, using them as pixels in a display offers advantages over liquid crystal displays, such as higher visibility and the elimination of the need for a backlight, making them suitable as flat-panel display elements. Furthermore, displays using such light-emitting devices can be manufactured to be thin and lightweight, which is a significant advantage. Another characteristic is their extremely fast response speed.

[0005] In addition, since these light-emitting devices can form a light-emitting layer continuously in two dimensions, planar light emission can be obtained. This is a characteristic that is difficult to achieve with point light sources typified by incandescent bulbs and LEDs, or line light sources typified by fluorescent lamps. Therefore, it has high utility value as a planar light source that can be applied to lighting and the like.

[0006] Displays and lighting devices using such light-emitting devices are suitable for various electronic devices, and research and development are underway to seek light-emitting devices with better characteristics.

[0007] For example, the EL layer has a first layer, a second layer, a third layer, a light-emitting layer, and a fourth layer in order from the anode side. The first layer has a first organic compound and a second organic compound. The fourth layer has a seventh organic compound. The first organic compound shows electron-accepting properties with respect to the second organic compound. The second organic compound has a highest occupied molecular orbital (HOMO) level of -5.7 eV or more and -5.2 eV or less. When the square root of the electric field strength [V / cm] of the seventh organic compound is 600, the electron mobility is 1×10 -7 cm 2 / Vs or more and 5×10 -5 cm 2 / Vs or less, and a light-emitting device is known (Patent Document 1).

Prior Art Documents

Patent Documents

[0008]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0009] One aspect of the present invention aims to provide a novel light-emitting device that is superior in convenience, usefulness, or reliability. Alternatively, it aims to provide a novel light-emitting apparatus that is superior in convenience, usefulness, or reliability. Alternatively, it aims to provide a novel display device that is superior in convenience, usefulness, or reliability. Alternatively, it aims to provide a novel electronic device that is superior in convenience, usefulness, or reliability. Alternatively, it aims to provide a novel lighting device that is superior in convenience, usefulness, or reliability. Alternatively, it aims to provide a novel light-emitting device, a novel light-emitting apparatus, a novel display device, a novel electronic device, or a novel lighting device.

[0010] Furthermore, the description of these problems does not preclude the existence of other problems. Moreover, one aspect of the present invention does not need to solve all of these problems. Other problems will naturally become apparent from the description in the specification, drawings, and claims, and it is possible to extract other problems from the description in the specification, drawings, and claims. [Means for solving the problem]

[0011] (1) One aspect of the present invention is a light-emitting device having a first electrode, a second electrode, a first unit, and a first layer.

[0012] The first unit is sandwiched between the first electrode and the second electrode, and the first unit comprises a second layer, a third layer, and a fourth layer.

[0013] The second layer is sandwiched between the third and fourth layers, and the second layer contains a luminescent material.

[0014] The fourth layer is sandwiched between the second layer and the second electrode, and the fourth layer contains a first organic compound, the first organic compound comprising a π-electron-deficient heteroaromatic ring skeleton and a π-electron-excess heteroaromatic ring skeleton.

[0015] The first layer is sandwiched between the first electrode and the first unit, and the first layer is in contact with the first electrode. The first layer also contains a second organic compound and a third organic compound, the third organic compound being electron-accepting to the second organic compound.

[0016] The first layer is 1 × 10 4 [Ω cm] or more 1×10 7 It has a resistivity of [Ω·cm] or less.

[0017] (2) Another aspect of the present invention is the above-mentioned light-emitting device, wherein the first organic compound comprises a first HOMO level, and the first HOMO level is in the range of -6.0 eV to -5.6 eV.

[0018] (3) Another aspect of the present invention is the above-mentioned light-emitting device in which the first organic compound comprises a diazine skeleton and a π-electron-rich heteroaromatic ring skeleton.

[0019] This facilitates the transfer of electrons from the second electrode to the second layer.

[0020] (4) Another aspect of the present invention is the above-mentioned light-emitting device in which the first organic compound comprises a π-electron-deficient heteroaromatic ring skeleton and a carbazole skeleton.

[0021] This facilitates the movement of holes from the second layer to the fourth layer.

[0022] (5) In another aspect of the present invention, the first organic compound is the above-mentioned light-emitting device represented by the following general formula (G1).

[0023] [ka]

[0024] However, in the above general formula (G1), D represents a substituted or unsubstituted quinoxalinyl group, and E represents a substituted or unsubstituted carbazolyl group. Also, Ar represents a substituted or unsubstituted arylene group, and the arylene group has 6 to 13 carbon atoms forming the ring.

[0025] Thereby, the transfer of electrons from the second electrode to the second layer can be facilitated. Also, the transfer of holes from the second layer to the fourth layer can be facilitated. Further, the accumulation of holes between the second layer and the fourth layer can be reduced. Also, the accumulation of holes at the interface between the second layer and the fourth layer can be reduced. As a result, a novel light-emitting device excellent in convenience, usefulness, or reliability can be provided.

[0026] (6) Also, one aspect of the present invention is the above light-emitting device in which the third organic compound has a lowest unoccupied molecular orbital (LUMO) level of -5.0 eV or less, the second organic compound has a second highest occupied molecular orbital (HOMO) level, and the second HOMO level is in the range of -5.7 eV or more and -5.3 eV or less.

[0027] (7) Also, one aspect of the present invention is the above light-emitting device in which when the square root of the electric field strength [V / cm] is 600, the hole mobility of the second organic compound is 1×10 -3 cm / Vs or less.

[0028] (8) Also, one aspect of the present invention is the above light-emitting device in which the first layer has a resistivity of 5×10 4 [Ω·cm] or more and 1×10 7 [Ω·cm] or less.

[0029] (9) Also, one aspect of the present invention is the above light-emitting device in which the first layer has a resistivity of 1×10 5 [Ω·cm] or more and 1×10 7 [Ω·cm] or less.

[0030] This facilitates the injection of holes from the first electrode into the first unit. It also allows for proper suppression of holes flowing through the first layer. Furthermore, it suppresses the unintended flow of holes into adjacent light-emitting devices. Additionally, it suppresses crosstalk, which causes adjacent light-emitting devices to operate unintentionally. As a result, it is possible to provide a novel light-emitting device with superior convenience and reliability.

[0031] (10) Another aspect of the present invention is the above-described light-emitting device in which the third layer is sandwiched between the first layer and the second layer, and the third layer is in contact with the first layer.

[0032] The above-described light-emitting device comprises a third layer containing a fourth organic compound, the fourth organic compound having a third HOMO level, and the third HOMO level being in the range of -0.2 eV to 0 eV relative to the second HOMO level.

[0033] (11) Another aspect of the present invention is a display device having a first light-emitting device and a second light-emitting device.

[0034] The first light-emitting device has the above configuration, and the second light-emitting device is adjacent to the first light-emitting device.

[0035] The second light-emitting device comprises a third electrode and a fifth layer, the third electrode having a first gap between it and the first electrode.

[0036] The fifth layer is sandwiched between the third electrode and the second electrode, the fifth layer is in contact with the third electrode, and the fifth layer contains the second organic compound. The fifth layer also has a second gap between it and the first layer, and the second gap overlaps with the first gap.

[0037] (12) Another aspect of the present invention is a light-emitting device having the above-mentioned light-emitting device and a transistor or substrate.

[0038] (13) Another aspect of the present invention is a display device having the above-mentioned light-emitting device and a transistor or substrate.

[0039] (14) Another aspect of the present invention is a lighting device having the above-described light-emitting device and a housing.

[0040] (15) Another aspect of the present invention is an electronic device having the above-mentioned display device, a sensor, an operation button, a speaker or a microphone.

[0041] In the drawings attached to this specification, components are classified by function and shown as independent blocks in block diagrams. However, in reality, it is difficult to completely separate components by function, and a single component may be involved in multiple functions.

[0042] In this specification, the term "light-emitting device" includes image display devices that use light-emitting devices. Furthermore, modules to which connectors, such as anisotropic conductive films or TCPs (Tape Carrier Packages), are attached to light-emitting devices, modules to which printed circuit boards are provided at the end of TCPs, or modules to which ICs (integrated circuits) are directly mounted using the COG (Chip On Glass) method may also be included as light-emitting devices. Additionally, lighting fixtures and the like may have light-emitting devices. [Effects of the Invention]

[0043] According to one aspect of the present invention, it is possible to provide a novel light-emitting device that is excellent in convenience, usefulness, or reliability. Alternatively, it is possible to provide a novel light-emitting apparatus that is excellent in convenience, usefulness, or reliability. Alternatively, it is possible to provide a novel display device that is excellent in convenience, usefulness, or reliability. Alternatively, it is possible to provide a novel electronic device that is excellent in convenience, usefulness, or reliability. Alternatively, it is possible to provide a novel lighting device that is excellent in convenience, usefulness, or reliability. Alternatively, it is possible to provide a novel light-emitting device, a novel light-emitting apparatus, a novel display device, a novel electronic device, or a novel lighting device.

[0044] Furthermore, the description of these effects does not preclude the existence of other effects. Moreover, one aspect of the present invention does not necessarily have to possess all of these effects. Other effects will naturally become apparent from the description in the specification, drawings, and claims, and it is possible to extract other effects from the description in the specification, drawings, and claims. [Brief explanation of the drawing]

[0045] Figures 1A and 1B illustrate the configuration of a light-emitting device according to an embodiment. Figures 2A and 2B illustrate the configuration of a light-emitting device according to an embodiment. Figures 3A and 3B illustrate the configuration of the functional panel according to the embodiment. Figures 4A and 4B illustrate the configuration of the functional panel according to the embodiment. Figure 5 is a diagram illustrating the configuration of a functional panel according to an embodiment. Figures 6A and 6B are conceptual diagrams of an active matrix type light-emitting device. Figures 7A and 7B are conceptual diagrams of an active matrix type light-emitting device. Figure 8 is a conceptual diagram of an active matrix type light-emitting device. Figures 9A and 9B are conceptual diagrams of a passive matrix type light-emitting device. Figures 10A and 10B are diagrams representing lighting devices. Figures 11A to 11D are diagrams representing electronic devices. Figures 12A to 12C are diagrams representing electronic devices. Figure 13 is a diagram representing a lighting device. Figure 14 is a diagram representing a lighting device. Figure 15 is a diagram representing an in-vehicle display device and lighting system. Figures 16A to 16C are diagrams representing electronic devices. Figures 17A and 17B illustrate the configuration of a light-emitting device according to an embodiment. Figure 18 illustrates the current density-luminance characteristics of the light-emitting device according to the embodiment. Figure 19 illustrates the brightness-current efficiency characteristics of the light-emitting device according to the embodiment. Figure 20 illustrates the voltage-luminance characteristics of the light-emitting device according to the embodiment. Figure 21 illustrates the voltage-current characteristics of the light-emitting device according to the embodiment. Figure 22 illustrates the luminance-blue index characteristics of the light-emitting device according to the embodiment. Figure 23 illustrates the emission spectrum of the light-emitting device according to the embodiment. Figure 24 illustrates the change in normalized brightness over time of the light-emitting device according to the embodiment. [Modes for carrying out the invention]

[0046] A light-emitting device according to one aspect of the present invention comprises a first electrode, a second electrode, a first unit, and a first layer. The first unit is sandwiched between the first electrode and the second electrode, and the first unit comprises a second layer, a third layer, and a fourth layer. The second layer is sandwiched between the third layer and the fourth layer, and the second layer contains a light-emitting material. The fourth layer is sandwiched between the second layer and the second electrode, and the fourth layer contains a first organic compound, the first organic compound comprising a π-electron-deficient heteroaromatic ring skeleton and a π-electron-excess heteroaromatic ring skeleton, and the HOMO level is in the range of -6.0 eV to -5.6 eV. The first layer is sandwiched between the first electrode and the first unit, and the first layer is in contact with the first electrode. Furthermore, the first layer contains a second organic compound and a third organic compound, the third organic compound is electron-accepting to the second organic compound, and the resistivity of the first layer is 1 × 10⁻⁶. 4 [Ω cm] or more 1×10 7 It is within the range of [Ω·cm] or less.

[0047] The first organic compound, for example, comprising a diazine skeleton and a π-electron-rich heteroaromatic ring skeleton, facilitates the transfer of electrons from the second electrode to the second layer. In addition, the first organic compound, comprising a π-electron-deficient heteroaromatic ring skeleton and a carbazole skeleton, and having a HOMO level in the range of -6.0 eV to -5.6 eV, facilitates the transfer of holes from the second layer to the fourth layer. Furthermore, the accumulation of holes at the interface between the second and fourth layers can be reduced, and the degradation of the organic compound can be suppressed. As a result, a novel light-emitting device with superior convenience, usefulness, and reliability can be provided.

[0048] Furthermore, the high resistivity of the first layer is expected to suppress crosstalk. However, if the resistivity is too high, hole injection will be hindered, and a light-emitting device with a good lifespan cannot be obtained. Therefore, the resistivity of the material constituting the first layer should be 1 × 10⁻⁶. 4 [Ω cm] or more 1×10 7 It is preferable that the impedance is [Ω·cm] or less. Furthermore, the light-emitting device has a good lifespan, and the light-emitting device using it has suppressed crosstalk and good display quality.

[0049] Embodiments will be described in detail with reference to the drawings. However, it will be readily apparent to those skilled in the art that the present invention is not limited to the following description, and that its form and details can be modified in various ways without departing from the spirit and scope of the present invention. Accordingly, the present invention is not to be interpreted as being limited to the contents of the embodiments shown below. In the configuration of the invention described below, the same reference numerals are used in common across different drawings for the same parts or parts having similar functions, and repeated descriptions are omitted.

[0050] (Embodiment 1) In this embodiment, the configuration of a light-emitting device 550 according to one aspect of the present invention will be described with reference to Figure 1.

[0051] Figure 1A is a cross-sectional view of a light-emitting device 550 according to one embodiment of the present invention, and Figure 1B is a diagram illustrating the configuration of the light-emitting device 550 according to one embodiment of the present invention.

[0052] <Example configuration of light-emitting device 550> The light-emitting device described in this embodiment includes an electrode 551, an electrode 552, a unit 103, and a layer 104 (see Figure 1A). The unit 103 is sandwiched between the electrode 551 and the electrode 552.

[0053] <Example configuration of electrode 551> For example, conductive materials can be used for the electrode 551. Specifically, a film containing a metal, alloy, or conductive compound can be used for the electrode 551 in a single layer or in a multilayer structure.

[0054] For example, a film that efficiently reflects light can be used for the electrode 551. Specifically, an alloy containing silver and copper, an alloy containing silver and palladium, or a metal film such as aluminum can be used for the electrode 551.

[0055] Furthermore, for example, a metal film that transmits some of the light and reflects other parts of the light can be used for the electrode 551. This allows a microcavity structure to be provided in the light-emitting device 150. Alternatively, light of a predetermined wavelength can be extracted more efficiently than other light. Alternatively, light with a narrow full width at half maximum can be extracted. Alternatively, light of vivid colors can be extracted.

[0056] Furthermore, for example, a film that is transparent to visible light can be used for the electrode 551. Specifically, a thin metal film, alloy film, or conductive oxide film that is thin enough to transmit light can be used for the electrode 551 in a single layer or in a multilayer structure.

[0057] In particular, materials with a work function of 4.0 eV or higher can be suitably used for the electrode 551.

[0058] For example, conductive oxides containing indium can be used for electrode 551. Specifically, indium oxide, indium oxide-tin oxide (abbreviated as ITO), indium oxide-tin oxide containing silicon or silicon oxide (abbreviated as ITSO), indium oxide-zinc oxide, tungsten oxide, and indium oxide containing zinc oxide (IWZO) can be used.

[0059] Furthermore, conductive oxides containing zinc can be used, for example. Specifically, zinc oxide, zinc oxide with added gallium, and zinc oxide with added aluminum can be used.

[0060] In addition, for example, gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium (Pd), or nitrides of metallic materials (e.g., titanium nitride) can be used. Alternatively, graphene can be used.

[0061] <Example configuration of Unit 103> Unit 103 comprises layers 111, 112, and 113 (see Figure 1A). Unit 103 has the function of emitting light EL1.

[0062] For example, a layer selected from functional layers such as an emissive layer, a hole transport layer, an electron transport layer, and a carrier block layer can be used in unit 103. Furthermore, a layer selected from functional layers such as a hole injection layer, an electron injection layer, an exciton block layer, and a charge generation layer can also be used in unit 103.

[0063] 《Example of Layer 111 Configuration 1》 Layer 111 is sandwiched between layers 112 and 113, and layer 111 contains a light-emitting material. Furthermore, both a light-emitting material and a host material can be used in layer 111. Layer 111 can also be referred to as a light-emitting layer. It is preferable to position layer 111 in a region where holes and electrons recombine. This allows the energy generated by carrier recombination to be efficiently emitted as light.

[0064] Furthermore, it is preferable to position the layer 111 away from the metal used for electrodes, etc. This makes it possible to suppress the quenching phenomenon caused by the metal used for electrodes, etc.

[0065] Furthermore, it is preferable to adjust the distance from the reflective electrodes, etc., to the layer 111 and position the layer 111 at an appropriate location according to the emission wavelength. This allows the amplitude to be strengthened by utilizing the interference phenomenon between the light reflected by the electrodes, etc., and the light emitted by the layer 111. In addition, the light of a predetermined wavelength can be strengthened, narrowing the light spectrum. Furthermore, a vivid emission color can be obtained with high intensity. In other words, by positioning the layer 111 at an appropriate location between the electrodes, etc., a microcavity structure can be constructed.

[0066] For example, fluorescent materials, phosphorescent materials, or materials exhibiting thermally activated delayed fluorescence (TADF) (also known as TADF materials) can be used as luminescent materials. This allows the energy generated by carrier recombination to be released from the luminescent material as photo-EL1 (see Figure 1A).

[0067] [Fluorescent material] A fluorescent material can be used in layer 111. For example, the fluorescent materials exemplified below can be used in layer 111. However, this is not limited to these examples, and various known fluorescent materials can be used in layer 111.

[0068] Specifically, these include 5,6-bis[4-(10-phenyl-9-antryl)phenyl]-2,2'-bipyridine (abbreviation: PAP2BPy), 5,6-bis[4'-(10-phenyl-9-antryl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2BPy), N,N'-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), and N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl] Nyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn), N,N'-bis[4-(9H-carbazole-9-yl)phenyl]-N,N'-diphenylstilbene-4,4'-diamine (abbreviation: YGA2S), 4-(9H-carbazole-9-yl)-4'-(10-phenyl-9-anthryl)triphenylamine (abbreviation: YGAPA), 4-(9H-carbazole-9-yl)-4'-(9,10-diphenyl-2-anthryl)triphenylamine (abbreviation :2YGAPPA), N,9-diphenyl-N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole-3-amine (abbreviation: PCAPA), perylene, 2,5,8,11-tetra(tert-butyl)perylene (abbreviation: TBP), 4-(10-phenyl-9-anthryl)-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBAPA), N,N''-(2-tert-butylanthracene-9,10-diyldi-4,1-phenylene)bis[N,N',N '-triphenyl-1,4-phenylenediamine' (abbreviation: DPABPA), N,9-diphenyl-N-[4-(9,10-diphenyl-2-anthryl)phenyl]-9H-carbazole-3-amine (abbreviation: 2PCAPPA), N,N'-(pyrene-1,6-diyl)bis[(6,N-diphenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-03), 3,10-bis[N-(9-phenyl-9H-carbazole-2-yl)-N-phenylamino]naphtho[2,3-b;[6,7-b']bisbenzofuran (abbreviation: 3,10PCA2Nbf(IV)-02), 3,10-bis[N-(dibenzofuran-3-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10FrA2Nbf(IV)-02), etc. can be used.

[0069] In particular, condensed aromatic diamine compounds, such as pyrenediamine compounds like 1,6FLPAPrn, 1,6mMemFLPAPrn, and 1,6BnfAPrn-03, are preferred because they exhibit high hole-trapping properties and excellent luminescence efficiency or reliability.

[0070] Also, N-[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPPA), N,N,N',N',N'',N'',N''',N'''-octaphenyldibenzo[g,p]chrysen-2,7,10,15-tetraamine (abbreviation: DBC1), coumarin 30, N-(9,10-diphenyl-2-anthryl)-N,9-diphenyl-9H-carbazole-3-amine (abbreviation: 2PCAPA), N-[9,10-bis(1,1'-biphenyl-2-yl)-2-anthryl]-N,9-diphenyl-9H-carbazole-3-amine (abbreviation: 2PCABPhA), N-(9,10-diphenyl-2-anthryl)-N,N',N'-triphenyl You can use ru-1,4-phenylenediamine (abbreviation: 2DPAPA), N-[9,10-bis(1,1'-biphenyl-2-yl)-2-anthryl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPABPhA), 9,10-bis(1,1'-biphenyl-2-yl)-N-[4-(9H-carbazole-9-yl)phenyl]-N-phenylanthracene-2-amine (abbreviation: 2YGABPhA), N,N,9-triphenylanthracene-9-amine (abbreviation: DPhAPhA), coumarin 545T, N,N'-diphenylquinacridone (abbreviation: DPQd), rubren, 5,12-bis(1,1'-biphenyl-4-yl)-6,11-diphenyltetracene (abbreviation: BPT), etc.

[0071] Also, 2-(2-{2-[4-(dimethylamino)phenyl]ethenyl}-6-methyl-4H-pyran-4-ylidene)propanedinitrile (abbreviation: DCM1), 2-{2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinoridine-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCM2), N,N,N',N'-tetrakis (4-methylphenyl)tetracene-5,11-diamine (abbreviation: p-mPhTD), 7,14-diphenyl-N,N,N',N'-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluorantene-3,10-diamine (abbreviation: p-mPhAFD), 2-{2-isopropyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]k [Noridin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTI), 2-{2-tert-butyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinoridin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTB), 2-(2,6-bis{2-[4-(di You can use methylamino)phenyl]ethenyl}-4H-pyran-4-ylidene)propanedinitrile (abbreviation: BisDCM), 2-{2,6-bis[2-(8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinoridine-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: BisDCJTM), etc.

[0072] [Phosphorescent material] A phosphorescent material can be used in layer 111. For example, the phosphorescent materials exemplified below can be used in layer 111. However, it is not limited to these, and various known phosphorescent materials can be used in layer 111.

[0073] For example, organometallic iridium complexes having a 4H-triazole skeleton, organometallic iridium complexes having a 1H-triazole skeleton, organometallic iridium complexes having an imidazole skeleton, organometallic iridium complexes with a phenylpyridine derivative having an electron-withdrawing group as a ligand, organometallic iridium complexes having a pyrimidine skeleton, organometallic iridium complexes having a pyrazine skeleton, organometallic iridium complexes having a pyridine skeleton, rare earth metal complexes, platinum complexes, etc., can be used in layer 111.

[0074] [Phosphorescent material (blue)] Examples of organometallic iridium complexes having a 4H-triazole skeleton include tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazole-3-yl-κN2]phenyl-κC}iridium(III) (abbreviation: [Ir(mpptz-dmp)3]), tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Mptz)3]), tris[4-(3-biphenyl)-5-isopropyl-3-phenyl-4H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(iPrptz-3b)3]), etc.

[0075] Examples of organometallic iridium complexes having a 1H-triazole skeleton include tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(Mptz1-mp)3]), tris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Prptz1-Me)3]), etc.

[0076] Examples of organometallic iridium complexes having an imidazole skeleton include fac-tris[1-(2,6-diisopropylphenyl)-2-phenyl-1H-imidazole]iridium(III) (abbreviation: [Ir(iPrpmi)3]), tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridine]iridium(III) (abbreviation: [Ir(dmpimpt-Me)3]), etc.

[0077] Examples of organometallic iridium complexes using phenylpyridine derivatives having electron-withdrawing groups as ligands include bis[2-(4',6'-difluorophenyl)pyridinate-N,C 2’ Iridium(III) tetrakis(1-pyrazolyl) borate (abbreviation: FIr6), bis[2-(4',6'-difluorophenyl)pyridinate-N,C 2’ Iridium(III) picolinate (abbreviation: Firpic), bis{2-[3',5'-bis(trifluoromethyl)phenyl]pyridinate-N,C 2’ Iridium(III) picolinate (abbreviation: [Ir(CF3ppy)2(pic)]), bis[2-(4',6'-difluorophenyl)pyridinate-N,C 2’ Iridium(III) acetylacetonate (abbreviated as FIracac), etc., can be used.

[0078] These compounds exhibit blue phosphorescence and have emission wavelength peaks between 440 nm and 520 nm.

[0079] [Phosphorescent material (green)] Examples of organometallic iridium complexes having a pyrimidine skeleton include tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)3]), tris(4-t-butyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)3]), (acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)2(acac)]), (acetylacetonato)bis(6-tert-butyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [ Ir(tBuppm)2(acac)]), (acetylacetonato)bis[6-(2-norbornyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(nbppm)2(acac)]), (acetylacetonato)bis[5-methyl-6-(2-methylphenyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(mpmppm)2(acac)]), (acetylacetonato)bis(4,6-diphenylpyrimidinato)iridium(III) (abbreviation: [Ir(dppm)2(acac)]), etc. can be used.

[0080] Examples of organometallic iridium complexes having a pyrazine skeleton include (acetylacetonato)bis(3,5-dimethyl-2-phenylpyradinato)iridium(III) (abbreviation: [Ir(mppr-Me)2(acac)]), (acetylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyradinato)iridium(III) (abbreviation: [Ir(mppr-iPr)2(acac)]), etc.

[0081] Examples of organometallic iridium complexes having a pyridine skeleton include tris(2-phenylpyridinato-N,C) 2’ Iridium(III) (abbreviation: [Ir(ppy)3]), bis(2-phenylpyridinate-N,C) 2’Iridium(III) acetylacetonate (abbreviation: [Ir(ppy)2(acac)]), bis(benzo[h]quinolinate)iridium(III) acetylacetonate (abbreviation: [Ir(bzq)2(acac)]), tris(benzo[h]quinolinate)iridium(III) (abbreviation: [Ir(bzq)3]), tris(2-phenylquinolinate-N,C) 2’ Iridium(III) (abbreviation: [Ir(pq)3]), bis(2-phenylquinolinato-N,C) 2’ Iridium(III) acetylacetonate (abbreviation: [Ir(pq)2(acac)]), [2-d3-methyl-8-(2-pyridinyl-κN)benzofl[2,3-b]pyridine-κC]bis[2-(5-d3-methyl-2-pyridinyl-κN2)phenyl-κC]iridium(III) (abbreviation: [Ir(5mppy-d3)2(mbfpypy-d3)]), [2-d3-methyl-(2-pyridinyl-κN)benzofl[2,3-b]pyridine-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: [Ir(ppy)2(mbfpypy-d3)]), etc. can be used.

[0082] Examples of rare earth metal complexes include tris(acetylacetonato)(monophenanthroline)terbium(III) (abbreviation: [Tb(acac)3(Phen)]).

[0083] These compounds primarily exhibit green phosphorescence and have emission wavelength peaks between 500 nm and 600 nm. Furthermore, organometallic iridium complexes with a pyrimidine skeleton are remarkably superior in terms of reliability or luminescence efficiency.

[0084] [Phosphorescent material (red)] Examples of organometallic iridium complexes having a pyrimidine skeleton include (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinato]iridium(III) (abbreviation: [Ir(5mdppm)2(dibm)]), bis[4,6-bis(3-methylphenyl)pyrimidinato](dipvaloylmethanato)iridium(III) (abbreviation: [Ir(5mdppm)2(dpm)]), bis[4,6-di(naphthalene-1-yl)pyrimidinato](dipvaloylmethanato)iridium(III) (abbreviation: [Ir(d1npm)2(dpm)]), etc.

[0085] Examples of organometallic iridium complexes having a pyrazine skeleton include (acetylacetonato)bis(2,3,5-triphenylpyradinato)iridium(III) (abbreviation: [Ir(tppr)2(acac)]), bis(2,3,5-triphenylpyradinato)(dipivaloylmethanato)iridium(III) (abbreviation: [Ir(tppr)2(dpm)]), (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III) (abbreviation: [Ir(Fdpq)2(acac)]), etc.

[0086] Examples of organometallic iridium complexes having a pyridine skeleton include tris(1-phenylisoquinolinato-N,C) 2’ Iridium(III) (abbreviation: [Ir(piq)3]), bis(1-phenylisoquinolinato-N,C) 2’ Iridium(III) acetylacetonate (abbreviation: [Ir(piq)2(acac)]), etc., can be used.

[0087] Examples of rare earth metal complexes that can be used include tris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline)europium(III) (abbreviation: [Eu(DBM)3(Phen)]), tris[1-(2-tenoyl)-3,3,3-trifluoroacetonato](monophenanthroline)europium(III) (abbreviation: [Eu(TTA)3(Phen)]), etc.

[0088] Examples of platinum complexes that can be used include 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum(II) (abbreviated as PtOEP).

[0089] These compounds exhibit red phosphorescence and have an emission peak between 600 nm and 700 nm. Furthermore, organometallic iridium complexes with a pyrazine skeleton produce red emission with a chromaticity suitable for use in display devices.

[0090] [Substances exhibiting thermally activated delayed fluorescence (TADF)] TADF material can be used for layer 111. For example, the TADF material exemplified below can be used as the luminescent material. However, it is not limited to this, and various known TADF materials can be used as the luminescent material.

[0091] TADF materials have a small difference between the S1 and T1 energy levels, allowing for reverse intersystem crossing (upconversion) from a triplet excited state to a singlet excited state with minimal thermal energy. This enables efficient generation of singlet excited states from triplet excited states. Furthermore, the triplet excitation energy can be converted into luminescence.

[0092] Furthermore, an excited complex (also called an exciplex) that forms an excited state with two types of substances has an extremely small difference between the S1 and T1 levels and functions as a TADF material that can convert triplet excitation energy into singlet excitation energy.

[0093] Furthermore, the phosphorescence spectrum observed at low temperatures (e.g., 77K to 10K) can be used as an indicator of the T1 level. For TADF materials, when a tangent is drawn at the short-wavelength tail of the fluorescence spectrum and the energy at the wavelength where the extrapolation intersects the horizontal axis is defined as the S1 level, and when a tangent is drawn at the short-wavelength tail of the phosphorescence spectrum and the energy at the wavelength of the extrapolation is defined as the T1 level, it is preferable that the difference between the S1 level and the T1 level is 0.3 eV or less, and more preferably 0.2 eV or less.

[0094] Furthermore, when using TADF material as a light-emitting material, it is preferable that the S1 level of the host material is higher than the S1 level of the TADF material. Also, it is preferable that the T1 level of the host material is higher than the T1 level of the TADF material.

[0095] For example, fullerenes and their derivatives, acridines and their derivatives, eosin derivatives, etc., can be used as TADF materials. In addition, metal-containing porphyrins containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), or palladium (Pd), etc., can be used as TADF materials.

[0096] Specifically, the following can be used: protoporphyrin-tin fluoride complex (SnF2(Proto IX)), mesoporphyrin-tin fluoride complex (SnF2(Meso IX)), hematoporphyrin-tin fluoride complex (SnF2(Hemato IX)), coproporphyrin tetramethyl ester-tin fluoride complex (SnF2(Copro III-4Me)), octaethylporphyrin-tin fluoride complex (SnF2(OEP)), etioporphyrin-tin fluoride complex (SnF2(Etio I)), octaethylporphyrin-platinum chloride complex (PtCl2OEP), etc., whose structural formulas are shown below.

[0097] [ka]

[0098] Furthermore, for example, heterocyclic compounds having one or both of a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring can be used as TADF materials.

[0099] Specifically, the structural formulas are as follows: 2-(biphenyl-4-yl)-4,6-bis(12-phenylindoro[2,3-a]carbazol-11-yl)-1,3,5-triazine (abbreviation: PIC-TRZ), 9-(4,6-diphenyl-1,3,5-triazin-2-yl)-9'-phenyl-9H,9'H-3,3'-bicarbazol (abbreviation: PCCzTzn), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 2-[4-(10H-phenoxazine-10-yl)phenyl]-4 ,6-diphenyl-1,3,5-triazine (abbreviated as PXZ-TRZ), 3-[4-(5-phenyl-5,10-dihydrophenazin-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviated as PPZ-3TPT), 3-(9,9-dimethyl-9H-acridine-10-yl)-9H-xanthene-9-one (abbreviated as ACRXTN), bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl]sulfone (abbreviated as DMAC-DPS), 10-phenyl-10H,10'H-spiro[acridine-9,9'-anthracene]-10'-one (abbreviated as ACRSA), etc. can be used.

[0100] [ka]

[0101] The heterocyclic compound is preferred because it has both a π-electron-excess heteroaromatic ring and a π-electron-deficient heteroaromatic ring, resulting in high electron transport and hole transport properties. In particular, among the skeletons having a π-electron-deficient heteroaromatic ring, the pyridine skeleton, diazine skeleton (pyrimidine skeleton, pyrazine skeleton, pyridazine skeleton), and triazine skeleton are preferred because they are stable. In particular, the benzoflopyrimidine skeleton, benzothienopyrimidine skeleton, benzoflopyrazine skeleton, and benzothienopyrazine skeleton are preferred because they have high electron-accepting properties and good reliability.

[0102] Furthermore, among the skeletons having a π-electron-excess heteroaromatic ring, the acridine skeleton, phenoxazine skeleton, phenothiazine skeleton, furan skeleton, thiophene skeleton, and pyrrole skeleton are stable, and therefore it is preferable to have at least one of these skeletons. Dibenzofuran is preferred as the furan skeleton, and dibenzothiophene is preferred as the thiophene skeleton. Indole, carbazole, indrocarbazole, bicarbazole, and 3-(9-phenyl-9H-carbazole-3-yl)-9H-carbazole are particularly preferred as the pyrrole skeleton.

[0103] Furthermore, a substance in which a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring are directly bonded is particularly preferable because both the electron-donating and electron-accepting properties of the π-electron-rich heteroaromatic ring are strengthened, resulting in a smaller energy difference between the S1 and T1 levels, thus efficiently obtaining thermally activated delayed fluorescence. Alternatively, an aromatic ring bonded to an electron-withdrawing group such as a cyano group may be used instead of the π-electron-deficient heteroaromatic ring. Additionally, aromatic amine skeletons, phenazine skeletons, and the like can be used as the π-electron-rich skeleton.

[0104] Furthermore, as π-electron-deficient skeletons, xanthene skeletons, thioxanthene dioxide skeletons, oxadiazole skeletons, triazole skeletons, imidazole skeletons, anthraquinone skeletons, boron-containing skeletons such as phenylborane or volanthrene, aromatic rings or heteroaromatic rings having a nitrile group or cyano group such as benzonitrile or cyanobenzene, carbonyl skeletons such as benzophenone, phosphine oxide skeletons, sulfone skeletons, and the like can be used.

[0105] Thus, a π-electron-deficient skeleton and a π-electron-excess skeleton can be used instead of at least one of a π-electron-deficient heteroaromatic ring and a π-electron-excess heteroaromatic ring.

[0106] 《Example of Layer 111 Configuration 2》 Materials with carrier transport properties can be used as the host material. For example, materials with hole transport properties, materials with electron transport properties, materials exhibiting thermally activated delayed fluorescence (TADF), materials with an anthracene skeleton, and mixed materials can be used as the host material. It is preferable to use a material with a larger band gap than the luminescent material contained in layer 111 as the host material. This makes it possible to suppress energy transfer from excitons generated in layer 111 to the host material.

[0107] [Materials with hole transport properties] The hole mobility is 1 × 10⁻⁶. -6 cm 2 Materials with a Vs of / Vs or higher can be suitably used as materials with hole transport properties.

[0108] For example, amine compounds or organic compounds having a π-electron-rich heteroaromatic ring skeleton can be used in hole-transporting materials. Specifically, compounds having an aromatic amine skeleton, a carbazole skeleton, a thiophene skeleton, a furan skeleton, etc., can be used. Compounds having an aromatic amine skeleton or a carbazole skeleton are particularly preferred because they offer good reliability, high hole transportability, and contribute to reducing the driving voltage.

[0109] Examples of compounds having an aromatic amine skeleton include 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviated as NPB), N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine (abbreviated as TPD), 4,4'-bis[N-(spiro-9,9'-bifluoren-2-yl)-N-phenylamino]biphenyl (abbreviated as BSPB), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviated as BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviated as mBPAFLP), and 4-phenyl-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviated as PCBA1BP). ,4'-diphenyl-4''-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'-di(1-naphthyl)-4''-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBNBB), 9,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]fluoren-2-amine (abbreviation: PCBAF), N-phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]spiro-9,9'-bifluoren-2-amine (abbreviation: PCBASF), etc. can be used.

[0110] Examples of compounds having a carbazole skeleton include 1,3-bis(N-carbazolyl)benzene (abbreviated as mCP), 4,4'-di(N-carbazolyl)biphenyl (abbreviated as CBP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviated as CzTP), 3,3'-bis(9-phenyl-9H-carbazole) (abbreviated as PCCP), and the like.

[0111] Examples of compounds having a thiophene skeleton include 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviated as DBT3P-II), 2,8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviated as DBTFLP-III), 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviated as DBTFLP-IV), and others.

[0112] Examples of compounds having a furan skeleton include 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II), 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II), and others.

[0113] [Materials with electron transport properties] For example, metal complexes or organic compounds having a π-electron-deficient heteroaromatic ring skeleton can be used as electron-transporting materials.

[0114] Examples of metal complexes that can be used include bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviated as BeBq2), bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (abbreviated as BAlq), bis(8-quinolinolato)zinc(II) (abbreviated as Znq), bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviated as ZnPBO), bis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviated as ZnBTZ), and the like.

[0115] Organic compounds having a π-electron-deficient heteroaromatic ring skeleton include, for example, heterocyclic compounds having a polyazole skeleton, heterocyclic compounds having a diazine skeleton, heterocyclic compounds having a pyridine skeleton, and heterocyclic compounds having a triazine skeleton. In particular, heterocyclic compounds having a diazine skeleton or a pyridine skeleton are preferred due to their good reliability. Furthermore, heterocyclic compounds having a diazine (pyrimidine or pyrazine) skeleton have high electron transport properties, which can reduce the driving voltage.

[0116] Examples of heterocyclic compounds having a polyazole skeleton include 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviated as PBD), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviated as TAZ), and 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazole-2-yl]benzene (abbreviated as O XD-7), 9-[4-(5-phenyl-1,3,4-oxadiazole-2-yl)phenyl]-9H-carbazole (abbreviated as CO11), 2,2',2''-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviated as TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviated as mDBTBIm-II), etc. can be used.

[0117] Examples of heterocyclic compounds having a diazine skeleton include 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), and 2-[3'-(9H-carbazole-9-yl)biphenyl-3-yl]dibenzo[f,h Quinoxaline (abbreviation: 2mCzBPDBq), 4,6-bis[3-(phenanthren-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-bis[3-(4-dibenzothienyl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), 4,8-bis[3-(dibenzothiophen-4-yl)phenyl]benzo[h]quinazoline (abbreviation: 4,8mDBtP2Bqn), etc. can be used.

[0118] Examples of heterocyclic compounds having a pyridine skeleton include 3,5-bis[3-(9H-carbazole-9-yl)phenyl]pyridine (abbreviation: 35DCzPPy), 1,3,5-tri[3-(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB), and others.

[0119] Examples of heterocyclic compounds having a triazine skeleton include 2-[3'-(9,9-dimethyl-9H-fluoren-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mFBPTzn) and 2-[(1,1'-biphenyl)-4-yl]-4-phenyl-6-[9,9'-spirobi(9H-fluoren)-2-yl]-1,3,5-triazine (abbreviation: BP-SFT). You can use compounds such as Zn), 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-8-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn), 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-6-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn-02), etc.

[0120] [Materials containing an anthracene skeleton] Organic compounds having an anthracene skeleton can be used as host materials. In particular, organic compounds having an anthracene skeleton are suitable when fluorescent materials are used as the light-emitting material. This makes it possible to realize light-emitting devices with good luminescence efficiency and durability.

[0121] Among organic compounds having an anthracene skeleton, organic compounds having a diphenylanthracene skeleton, particularly a 9,10-diphenylanthracene skeleton, are preferred because they are chemically stable. Furthermore, when the host material has a carbazole skeleton, it is preferred because the hole injection and transport properties are enhanced. In particular, when the host material contains a dibenzocarbazole skeleton, the HOMO level becomes about 0.1 eV shallower than that of carbazole, making it easier for holes to enter, and it is also preferred because it has excellent hole transport properties and high heat resistance. From the viewpoint of hole injection and transport properties, a benzofluorene skeleton or a dibenzofluorene skeleton may be used instead of a carbazole skeleton.

[0122] Therefore, substances having both a 9,10-diphenylanthracene skeleton and a carbazole skeleton, substances having both a 9,10-diphenylanthracene skeleton and a benzocarbazole skeleton, and substances having both a 9,10-diphenylanthracene skeleton and a dibenzocarbazole skeleton are preferred as host materials.

[0123] For example, 6-[3-(9,10-diphenyl-2-anthryl)phenyl]-benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-phenyl-10-{4-(9-phenyl-9H-fluoren-9-yl)biphenyl-4'-yl}anthracene (abbreviation: FLPPA), 9-(1-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviation: αN-βNPAnth), 9-phenyl-3-[4-(10-phenyl [Lu-9-anthryl)phenyl]-9H-carbazole (abbreviated as PCzPA), 9-[4-(10-phenyl-9-antracenyl)phenyl]-9H-carbazole (abbreviated as CzPA), 7-[4-(10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviated as cgDBCzPA), 3-[4-(1-naphthyl)phenyl]-9-phenyl-9H-carbazole (abbreviated as PCPN), etc. can be used.

[0124] In particular, CzPA, cgDBCzPA, 2mBnfPPA, and PCzPA exhibit very good characteristics.

[0125] [Substances exhibiting thermally activated delayed fluorescence (TADF)] TADF materials can be used as host materials. When TADF materials are used as host materials, the triplet excitation energy generated by the TADF material can be converted into singlet excitation energy through reverse intersystem crossing. Furthermore, the excitation energy can be transferred to the light-emitting material. In other words, the TADF material functions as an energy donor, and the light-emitting material functions as an energy acceptor. This can increase the luminescence efficiency of the light-emitting device.

[0126] This is particularly effective when the light-emitting material is a fluorescent material. Furthermore, in order to obtain high luminescence efficiency, it is preferable that the S1 level of the TADF material is higher than that of the fluorescent material. Also, it is preferable that the T1 level of the TADF material is higher than that of the fluorescent material. Therefore, it is preferable that the T1 level of the TADF material is higher than that of the fluorescent material.

[0127] Furthermore, it is preferable to use a TADF material that exhibits emission that overlaps with the wavelength of the lowest-energy absorption band of the fluorescent material. This is preferable because it allows for smooth transfer of excitation energy from the TADF material to the fluorescent material, resulting in efficient emission.

[0128] Furthermore, for singlet excitation energy to be efficiently generated from triplet excitation energy by reverse intersystem crossing, it is preferable that carrier recombination occurs in the TADF material. It is also preferable that the triplet excitation energy generated in the TADF material does not transfer to the triplet excitation energy of the fluorescent substance. To achieve this, it is preferable that the fluorescent substance has protecting groups around the luminescent phosphoform (the skeleton that causes luminescence). Preferred protecting groups are substituents without π bonds, and saturated hydrocarbons are preferred. Specifically, examples include alkyl groups having 3 to 10 carbon atoms, substituted or unsubstituted cycloalkyl groups having 3 to 10 carbon atoms, and trialkylsilyl groups having 3 to 10 carbon atoms. It is even more preferable to have multiple protecting groups. Substituents without π bonds have poor carrier transport function, and therefore can increase the distance between the TADF material and the luminescent phosphoform of the fluorescent substance with little effect on carrier transport or carrier recombination.

[0129] Here, the term "luminescent phosphat" refers to the group of atoms (skeleton) that causes light emission in a fluorescent material. The luminescent phosphat preferably has a skeleton with π bonds, preferably contains an aromatic ring, and preferably has a fused aromatic ring or a fused heteroaromatic ring.

[0130] Examples of condensed aromatic rings or condensed heteroaromatic rings include phenanthrene skeletons, stilbene skeletons, acridone skeletons, phenoxazine skeletons, and phenothiazine skeletons. In particular, fluorescent materials having naphthalene skeletons, anthracene skeletons, fluorene skeletons, chrysene skeletons, triphenylene skeletons, tetracene skeletons, pyrene skeletons, perylene skeletons, coumarin skeletons, quinacridone skeletons, and naphthobisbenzofuran skeletons are preferred because they have high fluorescence quantum yields.

[0131] For example, TADF material, which can be used as a luminescent material, can be used as a host material.

[0132] [Example of mixed material composition 1] Furthermore, a material composed of a mixture of multiple substances can be used as the host material. For example, a material with electron-transporting properties and a material with hole-transporting properties can be used in the mixture. The weight ratio of the material with hole-transporting properties to the material with electron-transporting properties in the mixture should be (material with hole-transporting properties / material with electron-transporting properties) = (1 / 19) or more and (19 / 1) or less. This allows for easy adjustment of the carrier transport properties of layer 111. In addition, the recombination region can be easily controlled.

[0133] [Example of mixed material composition 2] A material mixed with a phosphorescent substance can be used as a host material. The phosphorescent substance can also be used as an energy donor to supply excitation energy to a fluorescent substance when a fluorescent substance is used as the light-emitting material.

[0134] [Example of mixed material composition 3] A mixed material containing a material that forms an excited complex can be used as the host material. For example, a material in which the emission spectrum of the formed excited complex overlaps with the wavelength of the lowest energy absorption band of the luminescent material can be used as the host material. This allows for smoother energy transfer and improves luminescence efficiency. Alternatively, the driving voltage can be suppressed. With such a configuration, luminescence using ExTET (Exciplex-Triplet Energy Transfer), which is energy transfer from the excited complex to the luminescent material (phosphorescent material), can be efficiently obtained.

[0135] A phosphorescent material can be used as at least one of the materials forming the excitation complex. This allows for the utilization of reverse intersystem crossing. Alternatively, the triplet excitation energy can be efficiently converted to the singlet excitation energy.

[0136] For a combination of materials to form an excited complex, it is preferable that the HOMO level of the hole-transporting material is higher than or equal to the HOMO level of the electron-transporting material. Alternatively, it is preferable that the LUMO level of the hole-transporting material is higher than or equal to the LUMO level of the electron-transporting material. This allows for efficient formation of the excited complex. The LUMO and HOMO levels of the materials can be derived from their electrochemical properties (reduction potential and oxidation potential). Specifically, the reduction potential and oxidation potential can be measured using cyclic voltammetry (CV) measurement.

[0137] The formation of excited complexes can be confirmed, for example, by comparing the emission spectra of a hole-transporting material, an electron-transporting material, and a mixed film made by mixing these materials, and observing that the emission spectrum of the mixed film shifts to a longer wavelength than the emission spectra of each individual material (or has a new peak on the longer wavelength side). Alternatively, it can be confirmed by comparing the transient photoluminescence (PL) of a hole-transporting material, the transient PL of an electron-transporting material, and the transient PL of a mixed film made by mixing these materials, and observing differences in the transient response, such as the transient PL lifetime of the mixed film having a longer lifetime component or a larger proportion of the delayed component than the transient PL lifetime of each individual material. Furthermore, the transient PL mentioned above can be replaced with transient electroluminescence (EL). That is, the formation of excited complexes can also be confirmed by comparing the transient EL of a hole-transporting material, the transient EL of an electron-transporting material, and the transient EL of a mixed film made by mixing these materials, and observing the differences in the transient response.

[0138] Example of Layer 113 configuration Layer 113 is sandwiched between layer 111 and electrode 552 and has a single-layer or multilayer structure. Layer 113 also contains the organic compound BPM. For example, an electron-transporting material can be used for layer 113. Layer 113 can also be called an electron transport layer. It is preferable to use a material for layer 113 that has a larger band gap than the luminescent material contained in layer 111. This makes it possible to suppress energy transfer from excitons generated in layer 111 to layer 113.

[0139] [Example 1 of organic compound BPM] Organic compound BPM comprises a π-electron-deficient heteroaromatic ring skeleton and a π-electron-rich heteroaromatic ring skeleton.

[0140] Furthermore, the organic compound BPM possesses a HOMO level HOMO1. The HOMO level HOMO1 is in the range of -6.0 eV to -5.6 eV (see Figure 1B).

[0141] Examples of π-electron-rich heteroaromatic ring skeletons include the carbazole skeleton, acridine skeleton, phenoxazine skeleton, phenothiazine skeleton, furan skeleton, thiophene skeleton, and pyrrole skeleton. In particular, when the organic compound BPM possesses a carbazole skeleton, the HOMO1 level of the organic compound BPM tends to fall within a suitable range. Furthermore, the control of the HOMO1 level of the organic compound BPM becomes easier.

[0142] Examples of π-electron-deficient heteroaromatic ring skeletons include the pyridine skeleton, diazine skeleton (pyrimidine skeleton, pyrazine skeleton, pyridazine skeleton), and triazine skeleton.

[0143] [Example 2 of organic compound BPM] Examples of organic compounds with π-electron-deficient heteroaromatic ring skeletons and carbazole skeletons include 3,5-bis[3-(9H-carbazole-9-yl)phenyl]pyridine (abbreviation: 35DCzPPy), 2-[3'-(9H-carbazole-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 2-[4'-(9-phenyl-9H-carbazole-3-yl)-3,1'-biphenyl-1-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mpPCBPDBq), and 2-[4-(3,6-diphenyl [9H-carbazol-9-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2CzPDBq-III), 4,6-bis[3-(9H-carbazol-9-yl)phenyl]pyrimidine (abbreviation: 4,6mCzP2Pm), 9,9'-[pyrimidine-4,6-diylbis(biphenyl-3,3'-diyl)]bis(9H-carbazol) (abbreviation: 4,6mCzBP2Pm), 6-(1,1'-biphenyl-3-yl)-4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenylpyrimidine (abbreviation: 6mBP-4Cz 2PPm), 4-[3,5-bis(9H-carbazole-9-yl)phenyl]-2-phenyl-6-(1,1'-biphenyl-4-yl)pyrimidine (abbreviation: 6BP-4Cz2PPm), 7-[4-(9-phenyl-9H-carbazole-2-yl)quinazoline-2-yl]-7H-dibenzo[c,g]carbazole (abbreviation: PC-cgDBCzQz), 2-{4-[3-(N-phenyl-9H-carbazole-3-yl)-9H-carbazole-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn) , 9-[3-(4,6-diphenyl-1,3,5-triazine-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviation: mPCCzPTzn-02), 11-(4-[1,1'-diphenyl]-4-yl-6-phenyl-1,3,5-triazine-2-yl)-11,12-dihydro-12-phenyl-indoro[2,3-a]carbazole (abbreviation: BP-Icz(II)Tzn), 5-[3-(4,6-diphenyl-1,3,5-triazine-2-yl)phenyl]-7,7-dimethyl-5H,7H-indeno[2,1-b]carbazole (abbreviation: mINc(II)PTzn), 3-[9-(4,6-diphenyl-1,3,5-triazine-2-yl)-2-dibenzofuranyl]-9-phenyl-9H-carbazole (abbreviation: PCDBfTzn), 2-{3-[3-(N-phenyl-9H-carbazole-3-yl)-9H-carbazole-9-yl]phenyl}dibenzo[f,h]quinoxaline (abbreviation: 2mPCCzPDBq), etc. can be used.

[0144] [Example 3 of organic compound BPM] The organic compound BPM is represented by the following general formula (G1).

[0145] [ka]

[0146] In the above general formula (G1), D represents a substituted or unsubstituted quinoxalinyl group.

[0147] Furthermore, substituted or unsubstituted quinoxalinyl groups can be represented, for example, by the following general formula (D-1). Also, R 1 ~R 10 One of these is Ar, and the others are hydrogen, a hydrocarbon group having 1 to 10 carbon atoms, an alicyclic hydrocarbon group having 3 to 10 carbon atoms, or a substituted or unsubstituted aromatic hydrocarbon group having 6 to 14 carbon atoms. Furthermore, the substituents on the aromatic hydrocarbon group can include, for example, an alkyl group having 1 to 4 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaromatic hydrocarbon group having 2 to 30 carbon atoms.

[0148] More specifically, methyl groups, ethyl groups, propyl groups, isopropyl groups, butyl groups, isobutyl groups, tert-butyl groups, n-hexyl groups, etc., can be used as substituents. Additionally, for example, cyclopropyl groups, cyclobutyl groups, cyclopentyl groups, cyclohexyl groups, adamantyl groups, etc., can be used as substituents. Furthermore, for example, phenyl groups, naphthyl groups, biphenyl groups, fluorenyl groups, spirofluorenyl groups, etc., can be used as substituents. Additionally, for example, pyridine rings, diazine rings (pyrimidine rings, pyrazine rings, pyridazine rings), triazine rings, quinoline rings, quinoxaline rings, quinazoline rings, benzoquinazoline rings, phenanthroline rings, azafluorantene rings, imidazole rings, oxazole rings, oxadiazole rings, triazole rings, etc., can be used as substituents.

[0149] [ka]

[0150] Furthermore, in the general formula (G1) above, E represents a substituted or unsubstituted carbazolyl group.

[0151] Furthermore, substituted or unsubstituted carbazolyl groups can be represented, for example, by the following general formula (E-1). Also, R 21 ~R 29 One of these is Ar, and the others are hydrogen, a hydrocarbon group having 1 to 10 carbon atoms, an alicyclic hydrocarbon group having 3 to 10 carbon atoms, or a substituted or unsubstituted aromatic hydrocarbon group having 6 to 14 carbon atoms. Furthermore, examples of substituents that can be used on the aromatic hydrocarbon group include alkyl groups having 1 to 4 carbon atoms, substituted or unsubstituted cycloalkyl groups having 3 to 10 carbon atoms, substituted or unsubstituted aromatic hydrocarbon groups having 6 to 30 carbon atoms, or substituted or unsubstituted heteroaromatic hydrocarbon groups having 2 to 30 carbon atoms. More specifically, the substituents already exemplified can be used as such substituents.

[0152] [ka]

[0153] Furthermore, in the above general formula (G1), Ar represents a substituted or unsubstituted arylene group, and the aromatic hydrocarbon group has 6 to 13 carbon atoms constituting the ring.

[0154] A substituted or unsubstituted arylene group can be represented, for example, by the following general formulas (Ar-1) to (Ar-14). Note that Ar may have substituents comprising a π-electron-deficient heteroaromatic ring skeleton or a π-electron-excess heteroaromatic ring skeleton. In other words, apart from D or E shown in the above general formula (G1), it may have substituents comprising a π-electron-deficient heteroaromatic ring skeleton or a π-electron-excess heteroaromatic ring skeleton. Therefore, for example, multiple quinoxalinyl groups may be bonded to Ar, or multiple carbazolyl groups may be bonded to Ar. Furthermore, examples of substituents that can be used on the arylene group include C1 to C4 alkyl groups, substituted or unsubstituted C3 to C10 cycloalkyl groups, substituted or unsubstituted C6 to C30 aromatic hydrocarbon groups, or substituted or unsubstituted C2 to C30 heteroaromatic hydrocarbon groups. More specifically, the substituents already exemplified can be used as such substituents.

[0155] [ka]

[0156] [Example 4 of organic compound BPM] In particular, the following organic compounds, such as 2-[4'-(9-phenyl-9H-carbazol-3-yl)-3,1'-biphenyl-1-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mpPCBPDBq) or 3-[3,5-di(carbazol-9-yl)phenyl]phenanthro[9,10-b]pyrazine (abbreviation: 2Cz2PDBq), can be suitably used as organic compound BPM.

[0157] [ka]

[0158] The organic compound BPM, by possessing a diazine skeleton and a π-electron-rich heteroaromatic ring skeleton, facilitates the transfer of electrons from electrode 552 to layer 111. In addition, the organic compound BPM, by possessing a π-electron-deficient heteroaromatic ring skeleton and a carbazole skeleton, and by having a HOMO level HOMO1 in the range of -6.0 eV to -5.6 eV, facilitates the transfer of holes from layer 111 to layer 113. Furthermore, the accumulation of holes at the interface between layer 111 and layer 113 can be reduced, and the degradation of the organic compound can be suppressed. As a result, a novel light-emitting device with superior convenience, usefulness, and reliability can be provided.

[0159] 《Example of Layer 104 Configuration 1》 Layer 104 is sandwiched between the electrode 551 and the unit 103, and layer 104 is in contact with the electrode 551.

[0160] A material with hole-injection properties can be used in layer 104. Layer 104 can also be referred to as a hole-injection layer. For example, layer 104 contains organic compound HM1 and organic compound AM1.

[0161] Organic compound AM1 has electron-accepting properties for organic compound HM1. This makes it easier to inject holes, for example, from electrode 551, or to reduce the driving voltage of the light-emitting device.

[0162] Organic and inorganic compounds can be used as electron-accepting materials. Electron-accepting materials can extract electrons from adjacent hole transport layers or hole-transporting materials by applying an electric field.

[0163] For example, compounds having electron-withdrawing groups (halogen groups or cyano groups) can be used in electron-accepting materials. Fluorine is particularly stable and preferred as the halogen group. Furthermore, electron-accepting organic compounds are easily vapor-deposited and readily formed into films. This can increase the productivity of light-emitting devices.

[0164] Specifically, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviated as F4-TCNQ), chloranil, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviated as HAT-CN), 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane (abbreviated as F6-TCNNQ), 2-(7-dicyanomethylene-1,3,4,5,6,8,9,10-octafluoro-7H-pyrene-2-ylidene)malononitrile, etc. can be used.

[0165] In particular, compounds in which an electron-withdrawing group is bonded to a condensed aromatic ring having multiple heteroatoms, such as HAT-CN, are thermally stable and therefore preferred.

[0166] [Examples of organic compounds AM1] The organic compound AM1 has a lowest unoccupied orbital (LUMO) level below -5.0 eV (see Figure 1B). Preferably, the organic compound AM1 contains fluorine.

[0167] Furthermore, radialene derivatives having electron-withdrawing groups (especially halogen groups such as fluoro groups or cyano groups) [3] are preferred because they have very high electron-accepting properties.

[0168] Specifically, α,α',α''-1,2,3-cyclopropanetriylidenates[4-cyano-2,3,5,6-tetrafluorobenzeneacetonitrile], α,α',α''-1,2,3-cyclopropanetriylidenates[2,6-dichloro-3,5-difluoro-4-(trifluoromethyl)benzeneacetonitrile], α,α',α''-1,2,3-cyclopropanetriylidenates[2,3,4,5,6-pentafluorobenzeneacetonitrile], etc., can be used.

[0169] 《Example of Layer 104 Configuration 2》 When the square root of the electric field strength [V / cm] in layer 104 is 600, the hole mobility is 1 × 10⁻⁶. -3 It is less than or equal to cm / Vs. Also, 1 × 10 4 [Ω cm] or more 1×10 7 It has a resistivity of [Ω·cm] or less. Preferably, 5 × 10 4 [Ω cm] or more 1×10 7 Having a resistivity of [Ω·cm] or less, more preferably 1 × 10⁻⁶ 5 [Ω cm] or more 1×10 7 It has a resistivity of [Ω·cm] or less.

[0170] Considering the effect of crosstalk suppression, a higher resistivity of layer 104 in one embodiment of the present invention is desirable. However, it has been found that if the resistivity is too high, hole injection is hindered, and a light-emitting device with a good lifespan cannot be obtained. Therefore, the resistivity of the material constituting layer 104 should be 1 × 10⁻⁶. 4 [Ω cm] or more 1×10 7 It is preferable that the value is [Ω·cm] or less. The light-emitting device has a good lifespan, and the light-emitting device using this device can be a light-emitting device with suppressed crosstalk and good display quality.

[0171] Furthermore, from the perspective of crosstalk suppression effect, the resistivity is 5 × 10⁻⁶. 4 [Ω cm] or more 1×10 7 Preferably less than or equal to Ω·cm, and 1 × 10 5 [Ω cm] or more 1×107 [Ω·cm] or less is preferable.

[0172] [Example of organic compound HM1] For example, compounds having an aromatic amine skeleton, carbazole derivatives, aromatic hydrocarbons, aromatic hydrocarbons having a vinyl group, and polymer compounds (oligomers, dendrimers, polymers, etc.) can be used as organic compound HM1.

[0173] Furthermore, a material having a relatively deep HOMO level can be used as the organic compound HM1. The organic compound HM1 has a HOMO level HOMO2. The HOMO level HOMO2 is in the range of -5.7eV to -5.2eV, preferably -5.7eV to -5.3eV, and more preferably -5.7eV to -5.4eV (see Figure 1B). This facilitates the injection of holes into unit 103. It also facilitates the injection of holes into layer 112. Furthermore, it can appropriately suppress the induction of holes. Furthermore, it can increase the resistivity of layer 104 to an appropriate range. Furthermore, it can suppress the crosstalk phenomenon of adjacent light-emitting devices.

[0174] Examples of organic compounds with relatively deep HOMO levels include N-(4-biphenyl)-6,N-diphenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BnfABP), N,N-bis(4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf), 4,4'-bis(6-phenylbenzo[b]naphtho[1,2-d]furan-8-yl)-4''-phenyltriphenylamine (abbreviation: BnfBB1BP), and N,N-bis(4-biphenyl)ben Zo[b]naphtho[1,2-d]furan-6-amine (abbreviation: BBABnf(6)), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf(8)), N,N-bis(4-biphenyl)benzo[b]naphtho[2,3-d]furan-4-amine (abbreviation: BBABnf(II)(4)), N,N-bis[4-(dibenzofuran-4-yl)phenyl]-4-amino-p-terphenyl (abbreviation: DBfBB1TP), N-[4-(dibenzothiophen-4-yl)phenyl] -N-phenyl-4-biphenylamine (abbreviation: ThBA1BP), 4-(2-naphthyl)-4',4''-diphenyltriphenylamine (abbreviation: BBAβNB), 4-[4-(2-naphthyl)phenyl]-4',4''-diphenyltriphenylamine (abbreviation: BBAβNBi), 4,4'-diphenyl-4''-(6;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβNB), 4,4'-diphenyl-4''-(7;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβ NB-03), 4,4'-diphenyl-4''-(7-phenyl)naphthyl-2-yltriphenylamine (abbreviation: BBAPβNB-03), 4,4'-diphenyl-4''-(6;2'-binaphthyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B), 4,4'-diphenyl-4''-(7;2'-binaphthyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B-03), 4,4'-diphenyl-4''-(4;2'-binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB), 4,4'-Diphenyl-4''-(5;2'-binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB-02), 4-(4-biphenylyl)-4'-(2-naphthyl)-4''-phenyltriphenylamine (abbreviation: TPBiAβNB), 4-(3-biphenylyl)-4'-[4-(2-naphthyl)phenyl]-4''-phenyltriphenylamine (abbreviation: mTPBiAβNBi), 4-(4-biphenylyl)-4'-[4-(2-naphthyl)phenyl]-4' '-phenyltriphenylamine (abbreviation: TPBiAβNBi), 4-phenyl-4'-(1-naphthyl)triphenylamine (abbreviation: αNBA1BP), 4,4'-bis(1-naphthyl)triphenylamine (abbreviation: αNBB1BP), 4,4'-diphenyl-4''-[4'-(carbazole-9-yl)biphenyl-4-yl]triphenylamine (abbreviation: YGTBi1BP), 4'-[4-(3-phenyl-9H-carbazole-9-yl)phenyl]tris(1, 1'-biphenyl-4-yl)amine (abbreviation: YGTBi1BP-02), 4-[4'-(carbazole-9-yl)biphenyl-4-yl]-4'-(2-naphthyl)-4''-phenyltriphenylamine (abbreviation: YGTBiβNB), N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-N-[4-(1-naphthyl)phenyl]-9,9'-spirobio[9H-fluorene]-2-amine (abbreviation: PCBNBSF), N,N-bis([1,1'-bi Phenyl]-4-yl)-9,9'-spirobio[9H-fluorene]-2-amine (abbreviation: BBASF), N,N-bis([1,1'-biphenyl]-4-yl)-9,9'-spirobio[9H-fluorene]-4-amine (abbreviation: BBASF(4)), N-(1,1'-biphenyl-2-yl)-N-(9,9-dimethyl-9H-fluorene-2-yl)-9,9'-spirobio[9H-fluorene]-4-amine (abbreviation: oFBiSF), N-(4-biphenyl)-N-(9,9-dimethyl-9H-fluoren-2-yl)dibenzofuran-4-amine (abbreviation: FrBiF), N-[4-(1-naphthyl)phenyl]-N-[3-(6-phenyldibenzofuran-4-yl)phenyl]-1-naphthylamine (abbreviation: mPDBfBNBN), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), 4-phenyl-4'-[4-(9-phenylfluoren-9-yl)phenyl]triphenylamine (abbreviation: BPAFLBi), 4-phenyl-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-diphenyl-4 ''-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'-di(1-naphthyl)-4''-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBNBB), N-phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]spiro-9,9'-bifluoren-2-amine (abbreviation: PCBASF), N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: PCBBiF), etc. can be used.

[0175] Example of Layer 112 configuration Layer 112 is sandwiched between layers 104 and 111, and has a single-layer or laminated structure. Layer 112 is also in contact with layer 104 (see Figure 1A).

[0176] Layer 112 contains the organic compound HM2. For example, a material with hole-transporting properties can be used for layer 112. Layer 112 can also be called a hole-transporting layer. It is preferable to use a material for layer 112 that has a larger band gap than the luminescent material contained in layer 111. This makes it possible to suppress energy transfer from excitons generated in layer 111 to layer 112.

[0177] [Materials with hole transport properties] The hole mobility is 1 × 10⁻⁶. -6 cm 2 Materials with a Vs of / Vs or higher can be suitably used as materials with hole transport properties.

[0178] For example, a hole-transporting material that can be used in layer 111 can be used in layer 112. Specifically, a hole-transporting material that can be used as a host material can be used in layer 112.

[0179] [Example of organic compound HM2] The organic compound HM2 possesses a HOMO level HOMO3. The HOMO level HOMO3 lies in the range of -0.2 eV to 0 eV relative to the HOMO level HOMO2 (see Figure 1B).

[0180] This facilitates the movement of holes from electrode 551 toward layer 111. It also allows for a moderate expansion of the region contributing to light emission near layer 111 toward layer 113. Furthermore, it allows for a wider distribution of excitons generated by carrier recombination in the thickness direction. Additionally, it suppresses the alteration of organic compounds via excited states. Finally, it enhances the reliability of layer 111. As a result, a novel light-emitting device with superior convenience, usefulness, and reliability can be provided.

[0181] This embodiment can be appropriately combined with other embodiments shown in this specification.

[0182] (Embodiment 2) In this embodiment, the configuration of a light-emitting device 550 according to one aspect of the present invention will be described with reference to Figure 1A.

[0183] <Example configuration of light-emitting device 550> The light-emitting device 550 described in this embodiment includes an electrode 551, an electrode 552, a unit 103, and a layer 105. Electrode 552 has a region that overlaps with electrode 551, and unit 103 has a region sandwiched between electrode 551 and electrode 552. Layer 105 also has a region sandwiched between unit 103 and electrode 552. For example, the configuration described in Embodiment 1 can be used for unit 103.

[0184] <Example configuration of electrode 552> For example, conductive materials can be used for the electrode 552. Specifically, materials containing metals, alloys, or conductive compounds can be used for the electrode 552 in a single layer or in a multilayer structure.

[0185] For example, the material that can be used for electrode 551 described in Embodiment 1 can be used for electrode 552. In particular, a material with a smaller work function than electrode 551 can be suitably used for electrode 552. Specifically, a material with a work function of 3.8 eV or less is preferred.

[0186] For example, elements belonging to Group 1 of the periodic table, elements belonging to Group 2 of the periodic table, rare earth metals, and alloys containing these can be used for electrode 552.

[0187] Specifically, lithium (Li), cesium (Cs), magnesium (Mg), calcium (Ca), strontium (Sr), europium (Eu), ytterbium (Yb), and alloys containing these elements (MgAg, AlLi) can be used for electrode 552.

[0188] Example of Layer 105 configuration For example, an electron-injection material can be used for layer 105. Layer 105 can also be referred to as an electron-injection layer.

[0189] Specifically, a donor material can be used in layer 105. Alternatively, a composite material of a donor material and an electron-transporting material can be used in layer 105. Alternatively, an electride can be used in layer 105. This makes it easier to inject electrons, for example, from electrode 552. Alternatively, not only materials with a small work function but also materials with a large work function can be used in electrode 552. Alternatively, a material for electrode 552 can be selected from a wide range of materials, regardless of the work function. Specifically, Al, Ag, ITO, silicon, or indium oxide-tin oxide containing silicon oxide can be used in electrode 552. Alternatively, the driving voltage of the light-emitting device can be reduced.

[0190] [Substances with donor properties] For example, alkali metals, alkaline earth metals, rare earth metals, or compounds thereof (oxides, halides, carbonates, etc.) can be used as donor substances. Alternatively, organic compounds such as tetratianaphthalene (abbreviated as TTN), nickerosene, and decamethylnickerosene can also be used as donor substances.

[0191] Examples of alkali metal compounds (including oxides, halides, and carbonates) that can be used include lithium oxide, lithium fluoride (LiF), cesium fluoride (CsF), lithium carbonate, cesium carbonate, 8-hydroxyquinolinatolithium (abbreviated as Liq), etc.

[0192] As alkaline earth metal compounds (including oxides, halides, and carbonates), calcium fluoride (CaF2), etc., can be used.

[0193] [Example of composite material composition 1] Furthermore, materials composed of multiple types of substances can be used as materials with electron injection properties. For example, a substance with donor properties and a material with electron transport properties can be used as a composite material.

[0194] [Materials with electron transport properties] For example, metal complexes or organic compounds having a π-electron-deficient heteroaromatic ring skeleton can be used as electron-transporting materials.

[0195] For example, an electron-transporting material that can be used in unit 103 can be used in a composite material.

[0196] [Example of composite material composition 2] Furthermore, a composite material can be made from a microcrystalline alkali metal fluoride and an electron-transporting material. Alternatively, a composite material can be made from a microcrystalline alkaline earth metal fluoride and an electron-transporting material. In particular, a composite material containing 50 wt% or more of alkali metal fluoride or alkaline earth metal fluoride can be suitably used. Alternatively, a composite material containing an organic compound having a bipyridine skeleton can be suitably used. This can lower the refractive index of layer 105, or improve the external quantum efficiency of the light-emitting device.

[0197] [Example of composite material composition 3] For example, a composite material containing a first organic compound having lone pairs of electrons and a first metal can be used for layer 105. Furthermore, it is preferable that the sum of the number of electrons in the first organic compound and the first metal is odd. The molar ratio of the first metal to one mole of the first organic compound is preferably 0.1 to 10, more preferably 0.2 to 2, and even more preferably 0.2 to 0.8.

[0198] As a result, the first organic compound, which has lone pairs of electrons, can interact with the first metal to form a partially occupied molecular orbital (SOMO). Furthermore, when injecting electrons from electrode 552 into layer 105, the barrier between them can be reduced. Additionally, because the first metal has poor reactivity with water and oxygen, the moisture resistance of the light-emitting device can be improved.

[0199] Furthermore, the spin density measured using electron spin resonance (ESR) is preferably 1 × 10⁻⁶. 16 spins / cm 3 The above is more comfortable 5x10 16 spins / cm 3 More preferably 1 × 10 17 spins / cm 3 The composite material described above can be used for layer 105.

[0200] [Organic compounds with lone pairs of electrons] For example, electron-transporting materials can be used in organic compounds containing lone pairs of electrons. For instance, compounds having electron-deficient heteroaromatic rings can be used. Specifically, compounds having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), or a triazine ring can be used. This allows for a reduction in the driving voltage of the light-emitting device.

[0201] Furthermore, it is preferable that the lowest unoccupied molecular orbital (LUMO) of an organic compound containing a lone pair of electrons is between -3.6 eV and -2.3 eV. In addition, the HOMO and LUMO levels of an organic compound can generally be estimated by methods such as cyclic voltammetry (CV), photoelectron spectroscopy, optical absorption spectroscopy, and inverse photoelectron spectroscopy.

[0202] For example, 4,7-diphenyl-1,10-phenanthroline (abbreviated as BPhen), 2,9-bis(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviated as NBPhen), diquinoxalino[2,3-a:2',3'-c]phenazine (abbreviated as HATNA), and 2,4,6-tris[3'-(pyridine-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviated as TmPPPyTz) can be used in organic compounds containing lone pairs of electrons. NBPhen has a higher glass transition temperature (Tg) and superior heat resistance compared to BPhen.

[0203] Furthermore, copper phthalocyanine can be used, for example, in organic compounds that possess lone pairs of electrons. Note that copper phthalocyanine has an odd number of electrons.

[0204] [First Metal] For example, if the first organic compound having a lone pair of electrons has an even number of electrons, a composite material of a metal belonging to an odd group in the periodic table and the first organic compound can be used for layer 105.

[0205] For example, manganese (Mn), a metal of Group 7; cobalt (Co), a metal of Group 9; copper (Cu), silver (Ag), and gold (Au), metals of Group 11; and aluminum (Al) and indium (In), metals of Group 13, are all odd-numbered groups in the periodic table. Furthermore, elements of Group 11 have lower melting points compared to elements of Group 7 or 9, making them suitable for vacuum deposition. In particular, silver (Ag) is preferred due to its low melting point.

[0206] Furthermore, by using Ag in the electrode 552 and layer 105, the adhesion between layer 105 and electrode 552 can be improved.

[0207] Furthermore, if the number of electrons in the first organic compound, which has a lone pair of electrons, is odd, a composite material of the first metal and the first organic compound, which belong to an even group in the periodic table, can be used for layer 105. For example, iron (Fe), a metal in group 8, belongs to an even group in the periodic table.

[0208] [Electride] For example, a material obtained by adding a high concentration of electrons to a mixed oxide of calcium and aluminum can be used as an electron-injection material.

[0209] This embodiment can be appropriately combined with other embodiments shown in this specification.

[0210] (Embodiment 3) In this embodiment, the configuration of a light-emitting device 550 according to one aspect of the present invention will be described with reference to Figure 2A.

[0211] Figure 2A is a cross-sectional view illustrating the configuration of a light-emitting device according to one embodiment of the present invention.

[0212] <Example configuration of light-emitting device 550> Furthermore, the light-emitting device 550 described in this embodiment includes an electrode 551, an electrode 552, a unit 103, and an intermediate layer 106 (see Figure 2A). Electrode 552 has a region that overlaps with electrode 551, and unit 103 has a region sandwiched between electrode 551 and electrode 552. The intermediate layer 106 has a region sandwiched between unit 103 and electrode 552.

[0213] 《Example of the configuration of the intermediate layer 106》 The intermediate layer 106 comprises layer 106_1 and layer 106_2. Layer 106_2 comprises a region sandwiched between layer 106_1 and electrode 552.

[0214] 《Example of Layer 106_1 Configuration》 For example, an electron-transporting material can be used for layer 106_1. Layer 106_1 can also be called an electron relay layer. Using layer 106_1 allows the layer in contact with the anode side of layer 106_1 to be separated from the layer in contact with the cathode side of layer 106_1. This reduces the interaction between the layer in contact with the anode side of layer 106_1 and the layer in contact with the cathode side of layer 106_1. Electrons can be smoothly supplied to the layer in contact with the anode side of layer 106_1.

[0215] A material having a LUMO level between the LUMO level of an electron-accepting material contained in the layer in contact with the anode side of layer 106_1 and the LUMO level of a material contained in the layer in contact with the cathode side of layer 106_1 can be suitably used in layer 106_1.

[0216] For example, a material having a LUMO level in the range of -5.0 eV or higher, preferably -5.0 eV to -3.0 eV, can be used for layer 106_1.

[0217] Specifically, phthalocyanine-based materials can be used in layer 106_1. Alternatively, metal complexes having metal-oxygen bonds and aromatic ligands can be used in layer 106_1.

[0218] Example of layer 106_2 configuration For example, a material that supplies electrons to the anode side and holes to the cathode side when a voltage is applied can be used for layer 106_2. Specifically, electrons can be supplied to unit 103 located on the anode side. Layer 106_2 can also be called a charge generation layer.

[0219] Specifically, a hole-injection material that can be used in layer 104 can be used in layer 106_2. For example, a composite material can be used in layer 106_2. Alternatively, for example, a laminated film in which a film containing the composite material and a film containing a hole-transporting material are laminated can be used in layer 106_2.

[0220] This embodiment can be appropriately combined with other embodiments shown in this specification.

[0221] (Embodiment 4) In this embodiment, the configuration of a light-emitting device 550 according to one aspect of the present invention will be described with reference to Figure 2B.

[0222] Figure 2B is a cross-sectional view illustrating the configuration of a light-emitting device according to one embodiment of the present invention, which has a configuration different from that shown in Figure 2A.

[0223] <Example configuration of light-emitting device 550> The light-emitting device 550 described in this embodiment includes an electrode 551, an electrode 552, a unit 103, an intermediate layer 106, and a unit 103_2 (see Figure 2B). Electrode 552 has a region that overlaps with electrode 551. Unit 103 has a region sandwiched between electrodes 551 and 552, the intermediate layer 106 has a region sandwiched between unit 103 and electrode 552, and unit 103_2 has a region sandwiched between intermediate layer 106 and electrode 552. Unit 103_2 has the function of emitting light EL1_2. It also has a layer 105_2, which has a region sandwiched between unit 103 and intermediate layer 106.

[0224] In other words, the light-emitting device 550 has multiple stacked units between electrodes 551 and 552. Furthermore, the number of stacked units is not limited to two; three or more units can be stacked. A configuration comprising multiple stacked units sandwiched between electrodes 551 and 552, and an intermediate layer 106 sandwiched between the multiple units, is sometimes referred to as a stacked light-emitting device or a tandem light-emitting device. This allows for high-brightness light emission while maintaining a low current density. It also improves reliability, reduces the drive voltage compared to devices with the same brightness, and suppresses power consumption.

[0225] 《Example Configuration of Unit 103_2》 Unit 103_2 comprises layers 111_2, 112_2, and 113_2. Furthermore, any configuration that can be used in unit 103 can also be used in unit 103_2. For example, the same configuration as unit 103 can be used in unit 103_2.

[0226] 《Example Configuration of Unit 103_2, Part 2》 Furthermore, a different configuration from that of unit 103 can be used for unit 103_2. For example, a configuration with a different emission color than that of unit 103 can be used for unit 103_2. Specifically, unit 103 can emit red and green light, and unit 103_2 can emit blue light. This makes it possible to provide a light-emitting device that emits light of a desired color. For example, a light-emitting device that emits white light can be provided.

[0227] 《Example of the configuration of the intermediate layer 106》 The intermediate layer 106 has the function of supplying electrons to one of unit 103 or unit 103_2 and holes to the other. For example, the intermediate layer 106 described in Embodiment 3 can be used.

[0228] 《Example of Layer 105_2 Configuration》 For example, an electron-injection material can be used for layer 105_2. Layer 105_2 can also be referred to as an electron-injection layer. For instance, the material used for layer 105, as described in Embodiment 2, can be used for layer 105_2.

[0229] <Method for fabricating the light-emitting device 550> For example, the electrodes 551, 552, unit 103, intermediate layer 106, and unit 103_2 can be formed using dry, wet, vapor deposition, droplet ejection, coating, or printing methods. Furthermore, different methods can be used to form each component.

[0230] Specifically, the light-emitting device 550 can be manufactured using a vacuum deposition system, inkjet system, spin coater, coating system, gravure printing system, offset printing system, screen printing system, etc.

[0231] For example, an electrode can be formed using a wet method or a sol-gel method using a paste of a metal material. Further, an indium oxide-zinc oxide film can be formed by a sputtering method using a target in which 1 wt% or more and 20 wt% or less of zinc oxide is added to indium oxide. Further, an indium oxide (IWZO) film containing tungsten oxide and zinc oxide can be formed by a sputtering method using a target containing 0.5 wt% or more and 5 wt% or less of tungsten oxide and 0.1 wt% or more and 1 wt% or less of zinc oxide with respect to indium oxide.

[0232] Note that the present embodiment can be appropriately combined with other embodiments shown in this specification.

[0233] (Embodiment 5) In the present embodiment, the configuration of the functional panel 700 according to one aspect of the present invention will be described with reference to FIGS. 3A and 3B.

[0234] FIG. 3A is a cross-sectional view for explaining the configuration of the functional panel 700 according to one aspect of the present invention, and FIG. 3B is a cross-sectional view for explaining the configuration of the functional panel 700 according to one aspect of the present invention different from FIG. 3A.

[0235] In this specification and the like, a device manufactured using a metal mask or an FMM (fine metal mask, high-definition metal mask) may be referred to as a device having an MM (metal mask) structure. Further, in this specification and the like, a device manufactured without using a metal mask or an FMM may be referred to as a device having an MML (metal maskless) structure.

[0236] <Example configuration 1 of functional panel 700> The functional panel 700 described in the present embodiment has a light-emitting device 550X(i,j) and a light-emitting device 550Y(i,j) (see FIG. 3A). The light-emitting device 550Y(i,j) is adjacent to the light-emitting device 550X(i,j).

[0237] Furthermore, the functional panel 700 has an insulating film 521, and the light-emitting devices 550X(i,j) and 550Y(i,j) are formed on the insulating film 521.

[0238] 《Example configuration of the light-emitting device 550X(i,j)》 The light-emitting device 550X(i,j) has an electrode 551X(i,j), an electrode 552, and a unit 103X(i,j). It also has layers 104 and 105.

[0239] For example, the light-emitting devices described in Embodiments 1 to 4 can be used in the light-emitting device 550X(i,j). Specifically, the configuration that can be used in electrode 551 can be used in electrode 551X(i,j). Also, the configuration that can be used in unit 103 can be used in unit 103X(i,j). Furthermore, the configuration that can be used in layer 104 can be used in layer 104, and the configuration that can be used in layer 105 can be used in layer 105.

[0240] 《Example Configuration 1 of Light-Emitting Device 550Y(i,j)》 The light-emitting device 550Y(i,j) described in this embodiment includes an electrode 551Y(i,j), an electrode 552, and a unit 103Y(i,j) (see Figure 3A). Electrode 552 has a region that overlaps with electrode 551Y(i,j), and unit 103Y(i,j) has a region sandwiched between electrode 551Y(i,j) and electrode 552.

[0241] Electrode 551Y(i,j) is adjacent to electrode 551X(i,j), and electrode 551Y(i,j) has a gap 551XY(i,j) between it and electrode 551X(i,j).

[0242] Furthermore, for example, a material that can be used for electrode 551X(i,j) can also be used for electrode 551Y(i,j). The potential supplied to electrode 551Y(i,j) may be the same as or different from that supplied to electrode 551X(i,j). By supplying a different potential, the light-emitting device 550Y(i,j) can be driven under different conditions than the light-emitting device 550X(i,j).

[0243] 《Example Configuration of Unit 103Y(i,j) 1》 Unit 103Y(i,j) has a single-layer structure or a laminated structure.

[0244] For example, a layer selected from functional layers such as an emissive layer, a hole transport layer, an electron transport layer, and a carrier block layer can be used in unit 103Y(i,j). Furthermore, a layer selected from functional layers such as a hole injection layer, an electron injection layer, an exciton block layer, and a charge generation layer can also be used in unit 103Y(i,j).

[0245] 《Example Configuration of Unit 103Y(i,j) 2》 For example, unit 103Y(i,j) comprises layers 111Y(i,j), 112, and 113 (see Figure 3A).

[0246] Layer 112 includes a region sandwiched between electrode 551Y(i,j) and layer 111Y(i,j), layer 111Y(i,j) includes a region sandwiched between layer 112 and layer 113, and layer 113 includes a region sandwiched between layer 111Y(i,j) and electrode 552.

[0247] 《Example Configuration 2 of Light-Emitting Device 550Y(i,j)》 Furthermore, the light-emitting device 550Y(i,j) has a layer 104 and a layer 105. Layer 104 has a region sandwiched between the electrode 551Y(i,j) and the unit 103Y(i,j), and layer 105 has a region sandwiched between the unit 103Y(i,j) and the electrode 552.

[0248] Note that a part of the configuration of the light-emitting device 550X(i,j) can be used as a part of the configuration of the light-emitting device 550Y(i,j). Thereby, a part of the configuration can be made common. Also, the manufacturing process can be simplified.

[0249] <Configuration Example 2 of the Function Panel 700> Also, the function panel 700 described in this embodiment has an insulating film 528 (see FIG. 3A).

[0250] 《Configuration Example of the Insulating Film 528》 The insulating film 528 has openings, one opening overlapping with the electrode 551X(i,j) and the other opening overlapping with the electrode 551Y(i,j).

[0251] <Configuration Example 3 of the Function Panel 700> The function panel 700 described in this embodiment has a light-emitting device 550X(i,j) and a light-emitting device 550Y(i,j), and the light-emitting device 550Y(i,j) is adjacent to the light-emitting device 550X(i,j) (see FIG. 3B).

[0252] Note that the light-emitting device 550X(i,j) has an electrode 551X(i,j), an electrode 552, and a unit 103X(i,j). Also, it includes a layer 104X(i,j) and a layer 105. A configuration that can be used for the layer 104 can be used for the layer 104X(i,j).

[0253] The light-emitting device 550Y(i,j) has an electrode 551Y(i,j), an electrode 552, and a unit 103Y(i,j). Also, it includes a layer 104Y(i,j) and a layer 105, and the electrode 551Y(i,j) has a gap 551XY(i,j) between it and the electrode 551X(i,j).

[0254] Layer 104Y(i,j) is sandwiched between electrodes 551Y(i,j) and 552, and is in contact with electrode 551Y(i,j). Layer 104Y(i,j) contains the organic compound HM1. Layer 104Y(i,j) also has a gap 104XY(i,j) between it and layer 104X(i,j), and the gap 104XY(i,j) overlaps with the gap 551XY(i,j).

[0255] Furthermore, the light-emitting device 550Y(i,j) includes unit 103Y(i,j), and unit 103Y(i,j) has a gap between it and the light-emitting device 550X(i,j).

[0256] The functional panel described using Figure 3A differs from the functional panel described here in that layer 104Y(i,j) has a gap 104XY(i,j) between it and layer 104X(i,j), and in the configuration of unit 103Y(i,j), layer 112Y(i,j) has a gap between it and layer 112X(i,j), and layer 113Y(i,j) has a gap between it and layer 113X(i,j). Here, the differences will be explained in detail, and the above explanation will be used as a reference for similar configurations.

[0257] Example of layer 104Y(i,j) configuration A material with hole-injection properties can be used in layer 104Y(i,j). Layer 104Y(i,j) can also be called a hole-injection layer. For example, layer 104Y(i,j) contains organic compound HM1 and organic compound AM1. Furthermore, layer 104Y(i,j) has a gap 104XY(i,j) between it and layer 104X(i,j). This makes it possible to drastically suppress the current flowing between layer 104Y(i,j) and layer 104X(i,j).

[0258] 《Example 3 of Unit 103Y(i,j) Configuration》 Unit 103Y(i,j) comprises layers 111Y(i,j), 112Y(i,j), and 113Y(i,j) (see Figure 3B).

[0259] Layer 112Y(i,j) is sandwiched between electrode 551Y(i,j) and layer 111Y(i,j), and layer 112Y(i,j) has a gap between it and layer 112X(i,j). Furthermore, the configurations that can be used for layer 112 can also be used for layer 112Y(i,j).

[0260] Layer 111Y(i,j) is sandwiched between layers 112Y(i,j) and 113Y(i,j), and layer 111Y(i,j) has a gap between it and layer 111X(i,j).

[0261] Layer 113Y(i,j) is sandwiched between layer 111Y(i,j) and electrode 552, and layer 113Y(i,j) has a gap between it and layer 113X(i,j). Furthermore, the configurations that can be used for layer 113 can also be used for layer 113Y(i,j).

[0262] In other words, unit 103Y(i,j) has a groove between it and unit 103X(i,j), and unit 103Y(i,j) has one side wall along the groove. Unit 103X(i,j) also has another side wall along the groove, and this other side wall faces the first side wall.

[0263] <Example configuration of the 700 function panel 4> The functional panel 700 described in this embodiment has, for example, an insulating film 573 (see Figure 3B).

[0264] 《Example of the configuration of insulating film 573》 The insulating film 573 comprises insulating film 573A and insulating film 573B.

[0265] The insulating film 573A has a region sandwiched between the insulating film 573B and the insulating film 521, and the insulating film 573A is in contact with the insulating film 521. In addition, the insulating film 573A has a region in contact with the side wall of unit 103Y(i,j) and a region in contact with the side wall of unit 103X(i,j).

[0266] <Example configuration of the 700 function panel 5> Furthermore, the functional panel 700 described in this embodiment includes a layer 111Y(i,j) (see Figure 3A or Figure 3B).

[0267] 《Example of layer 111Y(i,j) configuration 1》 For example, a luminescent material or a luminescent material and a host material can be used for layer 111Y(i,j). Layer 111Y(i,j) can also be called a light-emitting layer. It is preferable to place layer 111Y(i,j) in a region where holes and electrons recombine. This allows the energy generated by carrier recombination to be efficiently emitted as light. It is also preferable to place layer 111Y(i,j) away from metals used for electrodes, etc. This suppresses the extinction phenomenon caused by metals used for electrodes, etc.

[0268] For example, a different luminescent material can be used in layer 111Y(i,j) than the luminescent material used in layer 111X(i,j). Specifically, luminescent materials with different emission colors can be used in layer 111Y(i,j). This allows for the placement of luminescent devices with different hues. Alternatively, additive color mixing can be performed using multiple luminescent devices with different hues. Or, colors with hues that cannot be displayed by individual luminescent devices can be represented.

[0269] For example, a light-emitting device that emits blue light, a light-emitting device that emits green light, and a light-emitting device that emits red light can be placed on the functional panel 700. Alternatively, a light-emitting device that emits white light, a light-emitting device that emits yellow light, and a light-emitting device that emits infrared light can be placed on the functional panel 700.

[0270] 《Example of layer 111Y(i,j) configuration 2》 For example, fluorescent materials, phosphorescent materials, or materials exhibiting thermally activated delayed fluorescence (TADF) (also known as TADF materials) can be used as luminescent materials. This allows the energy generated by carrier recombination to be released from the luminescent material as photo-EL2 (see Figure 3A or Figure 3B).

[0271] [Fluorescent material] For example, a fluorescent material that can be used in layer 111 can be used in layer 111Y(i,j). However, it is not limited to this, and various known fluorescent materials can be used in layer 111Y(i,j).

[0272] [Phosphorescent material] For example, a phosphorescent material that can be used in layer 111 can be used in layer 111Y(i,j). However, it is not limited to this, and various known phosphorescent materials can be used in layer 111Y(i,j).

[0273] [Substances exhibiting thermally activated delayed fluorescence (TADF)] For example, a TADF material that can be used for layer 111 can be used for layer 111Y(i,j). However, this is not limited to this, and various known TADF materials can be used for layer 111Y(i,j).

[0274] 《Example of layer 111Y(i,j) configuration 3》 Materials with carrier transport properties can be used as the host material. For example, materials with hole transport properties, materials with electron transport properties, materials exhibiting thermally activated delayed fluorescence (TADF), materials with an anthracene skeleton, and mixed materials can be used as the host material. It is preferable to use a material with a larger band gap than the luminescent material contained in layer 111Y(i,j) as the host material. This makes it possible to suppress energy transfer from excitons generated in layer 111Y(i,j) to the host material.

[0275] For example, a host material that can be used in layer 111 can be used in layer 111Y(i,j).

[0276] 《Example of layer 112Y(i,j) configuration》 For example, a hole-transporting material can be used in layer 112Y(i,j). Layer 112Y(i,j) can also be referred to as a hole-transporting layer. It is preferable to use a material in layer 112Y(i,j) that has a larger band gap than the luminescent material contained in layer 111Y(i,j). This makes it possible to suppress energy transfer from excitons generated in layer 111Y(i,j) to layer 112Y(i,j).

[0277] [Materials with hole transport properties] The hole mobility is 1 × 10⁻⁶. -6 cm 2 Materials with a Vs of / Vs or higher can be suitably used as materials with hole transport properties.

[0278] For example, a hole-transporting material that can be used in layer 111 can be used in layer 112Y(i,j). Specifically, a hole-transporting material that can be used as a host material can be used in layer 112Y(i,j).

[0279] 《Example of layer 113Y(i,j) configuration》 For example, electron-transporting materials, materials with an anthracene skeleton, and mixed materials can be used in layer 113Y(i,j). Layer 113Y(i,j) can also be called an electron transport layer. It is preferable to use a material with a larger band gap than the luminescent material contained in layer 111Y(i,j) in layer 113Y(i,j). This makes it possible to suppress energy transfer from excitons generated in layer 111Y(i,j) to layer 113Y(i,j).

[0280] [Materials with electron transport properties] For example, metal complexes or organic compounds having a π-electron-deficient heteroaromatic ring skeleton can be used as electron-transporting materials.

[0281] For example, an electron-transporting material that can be used in layer 111Y(i,j) can be used in layer 113Y(i,j). Specifically, an electron-transporting material that can be used as a host material can be used in layer 113Y(i,j).

[0282] This embodiment can be appropriately combined with other embodiments shown in this specification.

[0283] (Embodiment 6) In this embodiment, the configuration of a functional panel 700 according to one aspect of the present invention will be described with reference to Figures 4 and 5.

[0284] Figure 4A is a cross-sectional view illustrating the configuration of a functional panel 700 according to one embodiment of the present invention, and Figure 4B is a cross-sectional view illustrating the configuration of a functional panel 700 according to a different embodiment of the present invention from Figure 4A.

[0285] Figure 5 is a cross-sectional view illustrating the configuration of a functional panel 700 according to one embodiment of the present invention.

[0286] <Example configuration of function panel 700 1> The functional panel 700 described in this embodiment includes a light-emitting device 550X(i,j) and an optical functional device 550S(i,j) (see Figure 4A).

[0287] For example, the light-emitting devices described in Embodiments 1 to 4 can be used as the light-emitting device 550X(i,j).

[0288] <Example configuration of optical functional device 550S(i,j)> The optical functional device 550S(i,j) described in this embodiment includes an electrode 551S(i,j), an electrode 552, and a unit 103S(i,j). Electrode 552 has a region that overlaps with electrode 551S(i,j), and unit 103S(i,j) has a region sandwiched between electrode 551S(i,j) and electrode 552.

[0289] Furthermore, the optical functional device 550S(i,j) has layer 104 and layer 105. Layer 104 has a region sandwiched between electrode 551S(i,j) and unit 103S(i,j), and layer 105 has a region sandwiched between unit 103S(i,j) and electrode 552. Note that a part of the configuration of the light-emitting device 550X(i,j) can be used as a part of the configuration of the optical functional device 550S(i,j). This allows for the commonality of some components, or simplifies the manufacturing process.

[0290] <Example configuration of Unit 103S(i,j) 1> Unit 103S(i,j) has a single-layer structure or a laminated structure. For example, unit 103S(i,j) comprises layer 114S(i,j), layer 112, and layer 113 (see Figure 4A).

[0291] Layer 114S(i,j) comprises a region sandwiched between layers 112 and 113, layer 112 comprises a region sandwiched between electrode 551S(i,j) and layer 114S(i,j), and layer 113 comprises a region sandwiched between layer 114S(i,j) and electrode 552.

[0292] For example, a layer selected from functional layers such as a photoelectric conversion layer, a hole transport layer, an electron transport layer, and a carrier block layer can be used in unit 103S(i,j). Additionally, a layer selected from functional layers such as an exciton block layer and a charge generation layer can also be used in unit 103S(i,j).

[0293] Unit 103S(i,j) absorbs light hv and supplies electrons to one electrode and holes to the other electrode. For example, unit 103S(i,j) supplies holes to electrode 551S(i,j) and electrons to electrode 552.

[0294] Example of Layer 112 configuration For example, a material having hole-transporting properties can be used for layer 112. Layer 112 can also be referred to as a hole-transporting layer. For example, the configuration described in Embodiment 1 can be used for layer 112.

[0295] Example of Layer 113 configuration For example, electron-transporting materials, materials having an anthracene skeleton, and mixed materials can be used in layer 113. For example, the configuration described in Embodiment 1 can be used in layer 113.

[0296] 《Example of layer 114S(i,j) configuration 1》 For example, electron-accepting materials and electron-donating materials can be used in layer 114S(i,j). Specifically, materials that can be used in organic solar cells can be used in layer 114S(i,j). Layer 114S(i,j) can also be called a photoelectric conversion layer. Layer 114S(i,j) absorbs light hv and supplies electrons to one electrode and holes to the other electrode. For example, layer 114S(i,j) supplies holes to electrode 551S(i,j) and electrons to electrode 552.

[0297] [Examples of electron-accepting materials] For example, fullerene derivatives, non-fullerene electron acceptors, etc., can be used as electron-accepting materials.

[0298] As for electron-accepting materials, C 60 Fullerene, C 70 Fullerenes such as [6,6]-Phenyl-C71-butyric acid methyl ester (abbreviated as PC70BM), [6,6]-Phenyl-C61-butyric acid methyl ester (abbreviated as PC60BM), and 1',1'',4',4''-Tetrahydro-di[1,4]methanonaphthaleno[1,2:2',3',56,60:2'',3''][5,6]fullerene-C60 (abbreviated as ICBA) can be used.

[0299] Furthermore, perylene derivatives, compounds having a dicyanomethyleneindanone group, etc., can be used as non-fullerene electron acceptors. N,N'-dimethyl-3,4,9,10-perylenedicarboxymide (abbreviated as Me-PTCDI), etc., can be used.

[0300] [Examples of electron-donating materials] For example, phthalocyanine compounds, tetracene derivatives, quinacridone derivatives, rubrene derivatives, etc., can be used as electron-donating materials.

[0301] Electron-donating materials that can be used include copper(II) phthalocyanine (abbreviated as CuPc), tin(II) phthalocyanine (abbreviated as SnPc), zinc phthalocyanine (abbreviated as ZnPc), tetraphenyldibenzoperifuranthene (abbreviated as DBP), rubrene, and others.

[0302] 《Example of layer 114S(i,j) configuration 2》 For example, a single-layer structure or a multi-layer structure can be used for layer 114S(i,j). Specifically, a bulk heterojunction type structure can be used for layer 114S(i,j). Alternatively, a heterojunction type structure can be used for layer 114S(i,j).

[0303] [Example of mixed material composition] For example, a mixed material containing electron-accepting materials and electron-donating materials can be used in layer 114S(i,j). A configuration in which a mixed material containing electron-accepting materials and electron-donating materials is used in layer 114S(i,j) can be called a bulk heterojunction type.

[0304] Specifically, C 70 A mixed material containing fullerene and DBP can be used in layer 114S(i,j).

[0305] [Example of heterozygous type] Layers 114N(i,j) and 114P(i,j) can be used as layer 114S(i,j). Layer 114N(i,j) has a region sandwiched between one electrode and layer 114P(i,j), and layer 114P(i,j) has a region sandwiched between layer 114N(i,j) and the other electrode. For example, layer 114N(i,j) has a region sandwiched between electrode 552 and layer 114P(i,j), and layer 114P(i,j) has a region sandwiched between layer 114N(i,j) and electrode 551S(i,j) (see Figure 4B).

[0306] n-type semiconductors can be used in layer 114N(i,j). For example, Me-PTCDI can be used in layer 114N(i,j).

[0307] Furthermore, a p-type semiconductor can be used in layer 114P(i,j). For example, rubrene can be used in layer 114P(i,j).

[0308] Furthermore, an optical functional device 550S(i,j) having a configuration in which layer 114P(i,j) is in contact with layer 114N(i,j) can be called a PN junction type photodiode.

[0309] <Example configuration of Unit 103S(i,j) 2> Unit 103S(i,j) comprises layer 111Y(i,j), and layer 111Y(i,j) comprises a region sandwiched between layer 114S(i,j) and layer 113 (see Figure 5).

[0310] Configuration example 2 of unit 103S(i,j) differs from configuration example 1 of unit 103S(i,j) in that it includes layer 111Y(i,j). Here, the differences will be explained in detail, and the parts that have the same configuration will be explained by referring to the explanation above.

[0311] Example of layer 111Y(i,j) configuration For example, a luminescent material or a luminescent material and a host material can be used for layer 111Y(i,j). Layer 111Y(i,j) can also be called a light-emitting layer. It is preferable to place layer 111Y(i,j) in a region where holes and electrons recombine. This allows the energy generated by carrier recombination to be efficiently emitted as light. It is also preferable to place layer 111Y(i,j) away from metals used for electrodes, etc. This suppresses the extinction phenomenon caused by metals used for electrodes, etc.

[0312] Specifically, the configuration described in Embodiment 5 can be used for layer 111Y(i,j). In particular, a configuration that emits light of a wavelength that is less likely to be absorbed by layer 114S(i,j) can be suitably used for layer 111Y(i,j). This makes it possible to extract the light EL2 emitted by layer 111Y(i,j) with high efficiency.

[0313] This embodiment can be appropriately combined with other embodiments shown in this specification.

[0314] (Embodiment 7) This embodiment describes a light-emitting device using a light-emitting device described in any one of Embodiments 1 to 4.

[0315] In this embodiment, a light-emitting device manufactured using the light-emitting device described in any one of Embodiments 1 to 4 will be described with reference to Figure 6. Figure 6A is a top view showing the light-emitting device, and Figure 6B is a cross-sectional view obtained by cutting Figure 6A along lines AB and CD. This light-emitting device has a pixel section 602 and a drive circuit section shown by a dotted line to control the light emission of the light-emitting device, and the drive circuit section includes a source line drive circuit 601 and a gate line drive circuit 603. The light-emitting device also includes a sealing substrate 604 and a sealing material 605, the sealing material 605 surrounding the space 607.

[0316] The routing wiring 608 is for transmitting signals input to the source line drive circuit 601 and the gate line drive circuit 603, and receives video signals, clock signals, start signals, reset signals, etc. from the FPC (flexible printed circuit) 609, which serves as an external input terminal. Although only the FPC is shown in this illustration, a printed circuit board (PWB) may be attached to this FPC. In this specification, the light-emitting device includes not only the light-emitting device itself, but also the state in which the FPC or PWB is attached to it.

[0317] Next, the cross-sectional structure will be explained using Figure 6B. A drive circuit section and a pixel section are formed on the element substrate 610, and here, the source line drive circuit 601, which is the drive circuit section, and one pixel in the pixel section 602 are shown.

[0318] The element substrate 610 may be manufactured using a substrate made of glass, quartz, organic resin, metal, alloy, semiconductor, or other materials, as well as a plastic substrate made of FRP (Fiber Reinforced Plastics), PVF (Polyvinyl Fluoride), polyester, or acrylic resin.

[0319] The structure of the transistor used in the pixel or driving circuit is not particularly limited. For example, it may be an inverse staggered transistor or a staggered transistor. It may also be a top-gate or bottom-gate transistor. The semiconductor material used for the transistor is not particularly limited; for example, silicon, germanium, silicon carbide, gallium nitride, etc., can be used. Alternatively, an oxide semiconductor containing at least one of indium, gallium, and zinc, such as an In-Ga-Zn metal oxide, may be used.

[0320] The crystallinity of the semiconductor material used in the transistor is not particularly limited; amorphous semiconductors, crystalline semiconductors (microcrystalline semiconductors, polycrystalline semiconductors, single-crystal semiconductors, or semiconductors having a crystalline region in part) may be used. Using a crystalline semiconductor is preferable because it can suppress the degradation of transistor characteristics.

[0321] Here, it is preferable to use oxide semiconductors for semiconductor devices such as transistors used in the pixels or driving circuits described above, as well as transistors used in touch sensors and the like, which will be described later. In particular, it is preferable to use oxide semiconductors with a wider bandgap than silicon. By using oxide semiconductors with a wider bandgap than silicon, the current in the off state of the transistor can be reduced.

[0322] The above oxide semiconductor preferably contains at least indium (In) or zinc (Zn). More preferably, it is an oxide semiconductor containing an oxide represented as an In-M-Zn oxide (where M is a metal such as Al, Ti, Ga, Ge, Y, Zr, Sn, La, Ce, or Hf).

[0323] In particular, it is preferable to use an oxide semiconductor film as the semiconductor layer, which has multiple crystalline portions, the c-axis of which is oriented perpendicular to the surface on which the semiconductor layer is formed or to the upper surface of the semiconductor layer, and which does not have grain boundaries between adjacent crystalline portions.

[0324] By using such materials as semiconductor layers, fluctuations in electrical properties can be suppressed, enabling the realization of highly reliable transistors.

[0325] Furthermore, due to its low off-current, the transistor having the aforementioned semiconductor layer can retain the charge stored in the capacitor via the transistor for a long period of time. By applying such transistors to pixels, it becomes possible to maintain the gradation of the image displayed in each display area while simultaneously stopping the drive circuit. As a result, electronic devices with extremely reduced power consumption can be realized.

[0326] It is preferable to provide an undercoat to stabilize the characteristics of the transistor. As the undercoat, an inorganic insulating film such as a silicon oxide film, silicon nitride film, silicon oxynitride film, or silicon nitride film can be used and fabricated as a single layer or in layers. The undercoat can be formed using sputtering, CVD (Chemical Vapor Deposition) (plasma CVD, thermal CVD, MOCVD (Metal Organic CVD), etc.), ALD (Atomic Layer Deposition), coating, printing, etc. Note that the undercoat may be omitted if not necessary.

[0327] Note that FET623 is one of the transistors formed in the source line drive circuit 601. The drive circuit can be formed using various CMOS, PMOS, or NMOS circuits. In this embodiment, a driver-integrated type with the drive circuit formed on the substrate is shown, but this is not necessarily required, and the drive circuit can be formed externally instead of on the substrate.

[0328] Furthermore, although the pixel section 602 is formed by a plurality of pixels including a switching FET 611 and a current control FET 612 and a first electrode 613 electrically connected to its drain, it is not limited to this, and the pixel section may be a combination of three or more FETs and a capacitive element.

[0329] Furthermore, an insulator 614 is formed to cover the end of the first electrode 613. This can be formed by using a positive-type photosensitive acrylic resin film.

[0330] Furthermore, in order to ensure good coverage of the EL layer and the like that will be formed later, a curved surface with curvature is formed at the upper or lower end of the insulator 614. For example, when a positive-type photosensitive acrylic resin is used as the material for the insulator 614, it is preferable to have a curved surface with a radius of curvature (0.2 μm or more and 3 μm or less) only at the upper end of the insulator 614. In addition, either a negative-type photosensitive resin or a positive-type photosensitive resin can be used as the insulator 614.

[0331] An EL layer 616 and a second electrode 617 are formed on the first electrode 613, respectively. Here, it is desirable to use a material with a large work function for the first electrode 613 which functions as an anode. For example, in addition to single-layer films such as ITO film, silicon-containing indium tin oxide film, indium oxide film containing 2 wt% to 20 wt% zinc oxide, titanium nitride film, chromium film, tungsten film, Zn film, and Pt film, a laminate of titanium nitride film and a film mainly composed of aluminum, or a three-layer structure of titanium nitride film, a film mainly composed of aluminum, and titanium nitride film can be used. Furthermore, a laminated structure has low resistance as wiring, good ohmic contact can be obtained, and it can function as an anode.

[0332] Furthermore, the EL layer 616 is formed by various methods such as vapor deposition using a vapor deposition mask, inkjet printing, and spin coating. The EL layer 616 includes the configuration described in any one of Embodiments 1 to 4. In addition, other materials constituting the EL layer 616 may be low molecular weight compounds or high molecular weight compounds (including oligomers and dendrimers).

[0333] Furthermore, it is preferable to use a material with a small work function (such as Al, Mg, Li, Ca, or alloys or compounds thereof (MgAg, MgIn, AlLi, etc.)) for the second electrode 617, which is formed on the EL layer 616 and functions as a cathode. When light generated in the EL layer 616 is transmitted through the second electrode 617, it is preferable to use a laminate of a thin metal film and a transparent conductive film (such as ITO, indium oxide containing 2 wt% to 20 wt% zinc oxide, indium tin oxide containing silicon, zinc oxide (ZnO), etc.) as the second electrode 617.

[0334] The first electrode 613, the EL layer 616, and the second electrode 617 form a light-emitting device. This light-emitting device is the light-emitting device described in any one of Embodiments 1 to 4. The pixel portion has multiple light-emitting devices formed on it, and in the light-emitting device of this embodiment, both the light-emitting device described in any one of Embodiments 1 to 4 and light-emitting devices having other configurations may be mixed together.

[0335] Furthermore, by bonding the sealing substrate 604 to the element substrate 610 with the sealing material 605, the light-emitting device 618 is provided in the space 607 surrounded by the element substrate 610, the sealing substrate 604, and the sealing material 605. The space 607 is filled with a filler material, which may be an inert gas (such as nitrogen or argon) or a sealing material. A recess is formed in the sealing substrate, and a desiccant is placed therein to suppress deterioration due to the effects of moisture, which is a preferred configuration.

[0336] Furthermore, it is preferable to use epoxy resin or glass frit for the sealing material 605. It is also desirable that these materials are as impermeable to moisture and oxygen as possible. In addition to glass substrates or quartz substrates, plastic substrates made of FRP (Fiber Reinforced Plastics), PVF (Polyvinyl Fluoride), polyester, or acrylic resin can be used as the material for the sealing substrate 604.

[0337] Although not shown in Figures 6A and 6B, a protective film may be provided on the second electrode. The protective film may be formed of an organic resin film or an inorganic insulating film. Alternatively, the protective film may be formed to cover the exposed portion of the sealing material 605. Furthermore, the protective film can be provided to cover the surface and sides of the pair of substrates, the sealing layer, the insulating layer, and other exposed sides.

[0338] The protective film can be made of a material that is impermeable to impurities such as water. Therefore, it is possible to effectively suppress the diffusion of impurities such as water from the outside to the inside.

[0339] Materials that constitute the protective film can include oxides, nitrides, fluorides, sulfides, ternary compounds, metals, or polymers. For example, materials containing aluminum oxide, hafnium oxide, hafnium silicate, lanthanum oxide, silicon oxide, strontium titanate, tantalum oxide, titanium oxide, zinc oxide, niobium oxide, zirconium oxide, tin oxide, yttrium oxide, cerium oxide, scandium oxide, erbium oxide, vanadium oxide, or indium oxide can be used. Other materials containing aluminum nitride, hafnium nitride, silicon nitride, tantalum nitride, titanium nitride, niobium nitride, molybdenum nitride, zirconium nitride, or gallium nitride can be used. Nitrides containing titanium and aluminum, oxides containing titanium and aluminum, oxides containing aluminum and zinc, sulfides containing manganese and zinc, sulfides containing cerium and strontium, oxides containing erbium and aluminum, oxides containing yttrium and zirconium can be used.

[0340] It is preferable to form the protective film using a film deposition method that provides good step coverage. One such method is atomic layer deposition (ALD). It is preferable to use a material that can be formed using the ALD method for the protective film. By using the ALD method, it is possible to form a dense protective film with reduced defects such as cracks or pinholes, or a protective film with a uniform thickness. Furthermore, it is possible to reduce the damage inflicted on the processed workpiece when forming the protective film.

[0341] For example, by using the ALD method to form a protective film, it is possible to create a uniform, low-defect protective film on surfaces with complex uneven shapes, or on the top, sides, and back surfaces of a touch panel.

[0342] As described above, a light-emitting device can be obtained using the light-emitting device described in any one of Embodiments 1 to 4.

[0343] Since the light-emitting device in this embodiment uses the light-emitting device described in any one of Embodiments 1 to 4, a light-emitting device with good characteristics can be obtained. Specifically, since the light-emitting device described in any one of Embodiments 1 to 4 has good luminous efficiency, it is possible to make a light-emitting device with low power consumption.

[0344] Figure 7 shows an example of a light-emitting device that is made full-color by forming a light-emitting device that emits white light and providing a colored layer (color filter), etc. Figure 7A shows the substrate 1001, underlayer insulating film 1002, gate insulating film 1003, gate electrode 1006, gate electrode 1007, gate electrode 1008, first interlayer insulating film 1020, second interlayer insulating film 1021, peripheral part 1042, pixel part 1040, drive circuit part 1041, electrodes 1024W, 1024R, 1024G, 1024B of the light-emitting device, partition wall 1025, EL layer 1028, electrode 1029 of the light-emitting device, sealing substrate 1031, sealing material 1032, etc.

[0345] In Figure 7A, the colored layers (red colored layer 1034R, green colored layer 1034G, and blue colored layer 1034B) are provided on a transparent substrate 1033. A black matrix 1035 may also be provided. The transparent substrate 1033 on which the colored layers and black matrix are provided is aligned and fixed to the substrate 1001. The colored layers and black matrix 1035 are covered with an overcoat layer 1036. In Figure 7A, there is an emissive layer that emits light to the outside without passing through the colored layers, and an emissive layer that emits light to the outside by passing through each colored layer. Light that does not pass through the colored layers is white, and light that passes through the colored layers is red, green, and blue, so an image can be represented with four colored pixels.

[0346] Figure 7B shows an example in which colored layers (red colored layer 1034R, green colored layer 1034G, and blue colored layer 1034B) are formed between the gate insulating film 1003 and the first interlayer insulating film 1020. Thus, the colored layers may also be provided between the substrate 1001 and the encapsulating substrate 1031.

[0347] Furthermore, although the light-emitting device described above is a bottom-emission type device that extracts light from the substrate 1001 on which the FET is formed, it may also be a top-emission type device that extracts light from the sealing substrate 1031. A cross-sectional view of the top-emission type light-emitting device is shown in Figure 8. In this case, the substrate 1001 can be a substrate that does not transmit light. The process is the same as for the bottom-emission type light-emitting device until the connecting electrode that connects the FET and the anode of the light-emitting device is fabricated. After that, a third interlayer insulating film 1037 is formed covering the electrode 1022. This insulating film may also play a planarization role. The third interlayer insulating film 1037 can be formed using the same material as the second interlayer insulating film, as well as other known materials.

[0348] Electrodes 1024W, 1024R, 1024G, and 1024B of the light-emitting device are designated as anodes here, but they may also be cathodes. Furthermore, in the case of a top-emission type light-emitting device as shown in Figure 8, it is preferable that electrodes 1024W, 1024R, 1024G, and 1024B be reflective electrodes. The configuration of the EL layer 1028 is as described as unit 103 in any one of Embodiments 1 to 4, and the element structure is such that white light emission can be obtained.

[0349] In the top emission structure shown in Figure 8, sealing can be performed with a sealing substrate 1031 having colored layers (red colored layer 1034R, green colored layer 1034G, blue colored layer 1034B). A black matrix 1035 may be provided on the sealing substrate 1031 so as to be located between pixels. The colored layers (red colored layer 1034R, green colored layer 1034G, blue colored layer 1034B) or the black matrix may be covered with an overcoat layer 1036. The sealing substrate 1031 should be a translucent substrate. In addition, although an example of full-color display using four colors, red, green, blue, and white, is shown here, it is not particularly limited, and full-color display may be performed using four colors, red, yellow, green, and blue, or three colors, red, green, and blue.

[0350] In top-emission type light-emitting devices, a microcavity structure can be suitably applied. A light-emitting device having a microcavity structure is obtained by using a reflective electrode as the first electrode and a semi-transparent / semi-reflective electrode as the second electrode. There is at least an EL layer between the reflective electrode and the semi-transparent / semi-reflective electrode, and there is at least a light-emitting layer that forms a light-emitting region.

[0351] The reflective electrode has a visible light reflectance of 40% to 100%, preferably 70% to 100%, and its resistivity is 1 × 10⁻⁶. -2 The film thickness is assumed to be Ωcm or less. Furthermore, the semi-transparent / semi-reflective electrode has a visible light reflectance of 20% to 80%, preferably 40% to 70%, and its resistivity is 1 × 10⁻⁶. -2 Assume the membrane is less than Ωcm in diameter.

[0352] The light emitted from the light-emitting layer contained in the EL layer is reflected by the reflective electrode and the semi-transparent / semi-reflective electrode, causing resonance.

[0353] This light-emitting device allows you to change the optical distance between the reflective electrode and the semi-transparent / semi-reflective electrode by changing the thickness of the transparent conductive film or the aforementioned composite material, carrier transport material, etc. This makes it possible to strengthen light of resonant wavelengths and attenuate light of non-resonant wavelengths between the reflective electrode and the semi-transparent / semi-reflective electrode.

[0354] Furthermore, since the light reflected back by the reflective electrode (first reflected light) interferes significantly with the light that directly enters the semi-transparent / semi-reflective electrode from the light-emitting layer (first incident light), it is preferable to adjust the optical distance between the reflective electrode and the light-emitting layer to (2n-1)λ / 4 (where n is a natural number greater than or equal to 1, and λ is the wavelength of the light emission to be amplified). By adjusting this optical distance, the phases of the first reflected light and the first incident light can be aligned, and the light emission from the light-emitting layer can be further amplified.

[0355] In the above configuration, the EL layer may have a structure with multiple light-emitting layers or a structure with a single light-emitting layer. For example, it may be applied to a configuration in which multiple EL layers are provided in a single light-emitting device with a charge generation layer in between, and one or more light-emitting layers are formed in each EL layer, in combination with the tandem light-emitting device configuration described above.

[0356] By incorporating a microcavity structure, it becomes possible to enhance the emission intensity in the front direction at specific wavelengths, thereby reducing power consumption. Furthermore, in the case of a light-emitting device that displays images using four sub-pixels of red, yellow, green, and blue, in addition to the brightness enhancement effect of yellow emission, a microcavity structure tailored to the wavelength of each color can be applied to all sub-pixels, resulting in a light-emitting device with excellent characteristics.

[0357] Since the light-emitting device in this embodiment uses the light-emitting device described in any one of Embodiments 1 to 4, a light-emitting device with good characteristics can be obtained. Specifically, since the light-emitting device described in any one of Embodiments 1 to 4 has good luminous efficiency, it is possible to make a light-emitting device with low power consumption.

[0358] Up to this point, we have described an active matrix type light-emitting device, but from here on we will describe a passive matrix type light-emitting device. Figure 9 shows a passive matrix type light-emitting device manufactured by applying the present invention. Figure 9A is a perspective view of the light-emitting device, and Figure 9B is a cross-sectional view of Figure 9A cut along the X and Y lines. In Figure 9, an EL layer 955 is provided on the substrate 951 between electrodes 952 and 956. The ends of electrodes 952 are covered with an insulating layer 953. A partition layer 954 is provided on the insulating layer 953. The side walls of the partition layer 954 have a slope such that the distance between one side wall and the other side wall narrows as it approaches the substrate surface. In other words, the cross-section of the partition layer 954 in the short-side direction is trapezoidal, with the bottom side (facing the same direction as the surface direction of the insulating layer 953 and in contact with the insulating layer 953) being shorter than the top side (facing the same direction as the surface direction of the insulating layer 953 and not in contact with the insulating layer 953). By providing the partition layer 954 in this way, it is possible to prevent malfunctions of the light-emitting device caused by static electricity, etc. Furthermore, even in a passive matrix type light-emitting device, if the light-emitting device described in any one of Embodiments 1 to 4 is used, it is possible to make a light-emitting device with good reliability or a light-emitting device with low power consumption.

[0359] As described above, the light-emitting device is suitable for use as a display device for representing images because it is possible to control each of the numerous minute light-emitting devices arranged in a matrix.

[0360] Furthermore, this embodiment can be freely combined with other embodiments.

[0361] (Embodiment 8) In this embodiment, an example of using the light-emitting device described in any one of Embodiments 1 to 4 as an illumination device will be described with reference to Figure 10. Figure 10B is a top view of the illumination device, and Figure 10A is a cross-sectional view of ef in Figure 10B.

[0362] In this embodiment, the lighting device has a first electrode 401 formed on a translucent substrate 400 which serves as a support. The first electrode 401 corresponds to the electrode 101 in any one of Embodiments 1 to 4. When light is extracted from the first electrode 401 side, the first electrode 401 is formed from a translucent material.

[0363] A pad 412 for supplying voltage to the second electrode 404 is formed on the substrate 400.

[0364] An EL layer 403 is formed on the first electrode 401. The EL layer 403 corresponds to a configuration combining layer 104, unit 103, and layer 105 in any one of Embodiments 1 to 4, or a configuration combining layer 104, unit 103, intermediate layer 106, unit 103_2, and layer 105. Please refer to the relevant description for details on these configurations.

[0365] A second electrode 404 is formed by covering the EL layer 403. The second electrode 404 corresponds to electrode 102 in any one of Embodiments 1 to 4. When light emission is extracted from the first electrode 401 side, the second electrode 404 is formed of a material with high reflectivity. Voltage is supplied to the second electrode 404 by connecting it to the pad 412.

[0366] As described above, the lighting device shown in this embodiment has a light-emitting device having a first electrode 401, an EL layer 403, and a second electrode 404. Since this light-emitting device is a light-emitting device with high luminous efficiency, the lighting device in this embodiment can be a lighting device with low power consumption.

[0367] The lighting device is completed by fixing and sealing the substrate 400, on which the light-emitting device having the above configuration is formed, and the sealing substrate 407 using sealing materials 405 and 406. Either sealing material 405 or 406 may be used. In addition, a desiccant can be mixed into the inner sealing material 406 (not shown in Figure 10B), which allows for the adsorption of moisture and leads to improved reliability.

[0368] Furthermore, by extending the pad 412 and a portion of the first electrode 401 outside the sealing material 405 and sealing material 406, it can be used as an external input terminal. Alternatively, an IC chip 420 with a converter or the like may be placed on top of it.

[0369] As described above, the lighting device described in this embodiment uses the light-emitting device described in any one of Embodiments 1 to 4 as the EL element, and can be a lighting device with low power consumption.

[0370] (Embodiment 9) This embodiment describes an example of an electronic device that includes a light-emitting device described in any one of Embodiments 1 to 4 as part of it. The light-emitting device described in any one of Embodiments 1 to 4 has good luminous efficiency and is a light-emitting device with low power consumption. As a result, the electronic device described in this embodiment can be an electronic device having a light-emitting part with low power consumption.

[0371] Examples of electronic devices to which the above-mentioned light-emitting devices are applied include television equipment (also called televisions or television receivers), monitors for computers, digital cameras, digital video cameras, digital photo frames, mobile phones (also called mobile phones or mobile phone devices), portable game consoles, personal digital assistants, sound playback devices, and large game machines such as pachinko machines. Specific examples of these electronic devices are shown below.

[0372] Figure 11A shows an example of a television system. The television system has a display unit 7103 incorporated into a housing 7101. This figure also shows a configuration in which the housing 7101 is supported by a stand 7105. The display unit 7103 is capable of displaying images, and the display unit 7103 is configured by arranging the light-emitting devices described in any one of Embodiments 1 to 4 in a matrix.

[0373] The television system can be operated using the operation switches on the housing 7101 or a separate remote control unit 7110. The remote control unit 7110 has operation keys 7109 that allow for channel or volume control, and the image displayed on the display unit 7103 can be controlled. Alternatively, a display unit 7107 may be provided on the remote control unit 7110 to display output information.

[0374] The television system shall consist of a receiver or modem. The receiver will be able to receive general television broadcasts, and by connecting to a wired or wireless communication network via the modem, it will also be possible to perform one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers, etc.) information communication.

[0375] Figure 11B shows a computer, which includes a main unit 7201, a housing 7202, a display unit 7203, a keyboard 7204, an external connection port 7205, a pointing device 7206, etc. This computer is manufactured by arranging the light-emitting devices described in any one of Embodiments 1 to 4 in a matrix and using them for the display unit 7203. The computer in Figure 11B may also have the form shown in Figure 11C. The computer in Figure 11C has a second display unit 7210 instead of the keyboard 7204 and pointing device 7206. The second display unit 7210 is a touch panel, and input can be performed by operating the input display shown on the second display unit 7210 with a finger or a dedicated pen. In addition to the input display, the second display unit 7210 can also display other images. The display unit 7203 may also be a touch panel. The two screens are connected by a hinge, which prevents problems such as scratching or damaging the screens when storing or transporting the device.

[0376] Figure 11D shows an example of a mobile terminal. The mobile terminal includes a display unit 7402 incorporated into a housing 7401, as well as operation buttons 7403, an external connection port 7404, a speaker 7405, a microphone 7406, and the like. The mobile terminal has a display unit 7402 made by arranging the light-emitting devices described in any one of Embodiments 1 to 4 in a matrix.

[0377] The mobile terminal shown in Figure 11D can also be configured to allow information input by touching the display unit 7402 with a finger or other object. In this case, operations such as making a phone call or composing an email can be performed by touching the display unit 7402 with a finger or other object.

[0378] The display unit 7402 has three main modes. The first is a display mode that primarily displays images, the second is an input mode that primarily inputs information such as text, and the third is a display + input mode that combines the display mode and the input mode.

[0379] For example, when making a phone call or composing an email, the display unit 7402 should be set to a text input mode, which primarily focuses on text input, and the user should input the characters displayed on the screen. In this case, it is preferable to display a keyboard or number buttons on most of the screen of the display unit 7402.

[0380] Furthermore, by providing a detection device with tilt-detecting sensors such as a gyroscope and an accelerometer inside the mobile terminal, the orientation of the mobile terminal (portrait or landscape) can be determined, and the screen display of the display unit 7402 can be automatically switched accordingly.

[0381] Furthermore, the screen mode can be switched by touching the display unit 7402 or by operating the operation button 7403 on the housing 7401. It is also possible to switch modes depending on the type of image displayed on the display unit 7402. For example, if the image signal displayed on the display unit is video data, it can be switched to display mode; if it is text data, it can be switched to input mode.

[0382] Furthermore, in input mode, the system may detect a signal detected by the optical sensor of the display unit 7402 and, if there is no input via touch operation on the display unit 7402 for a certain period of time, control may be made to switch the screen mode from input mode to display mode.

[0383] The display unit 7402 can also function as an image sensor. For example, by touching the display unit 7402 with the palm or finger, palm prints, fingerprints, etc., can be captured to perform user authentication. Furthermore, by using a backlight that emits near-infrared light or a sensing light source that emits near-infrared light in the display unit, finger veins, palm veins, etc., can also be captured.

[0384] Figure 12A is a schematic diagram showing an example of a cleaning robot.

[0385] The cleaning robot 5100 has a display 5101 on its top surface, multiple cameras 5102 on its sides, a brush 5103, and control buttons 5104. Although not shown in the illustration, the cleaning robot 5100 also has wheels, a suction port, etc. on its underside. The cleaning robot 5100 is also equipped with various sensors, including an infrared sensor, an ultrasonic sensor, an accelerometer, a piezoelectric sensor, a light sensor, and a gyroscope. Furthermore, the cleaning robot 5100 is equipped with a means of wireless communication.

[0386] The cleaning robot 5100 is self-propelled, can detect dirt 5120, and can suck up the dirt through a suction port located on its underside.

[0387] Furthermore, the cleaning robot 5100 can analyze images captured by the camera 5102 to determine the presence or absence of obstacles such as walls, furniture, or steps. If the image analysis detects objects that could become entangled in the brush 5103, such as wiring, it can stop the brush 5103 from rotating.

[0388] The display 5101 can display information such as the remaining battery level or the amount of dirt collected. The path taken by the cleaning robot 5100 may also be displayed on the display 5101. Alternatively, the display 5101 may be a touch panel, and operation buttons 5104 may be provided on the display 5101.

[0389] The cleaning robot 5100 can communicate with a portable electronic device 5140, such as a smartphone. Images captured by the camera 5102 can be displayed on the portable electronic device 5140. Therefore, the owner of the cleaning robot 5100 can check the status of the room even when they are away from home. In addition, the display 5101 can be viewed on the portable electronic device 5140, such as a smartphone.

[0390] A light-emitting device according to one aspect of the present invention can be used in a display 5101.

[0391] The robot 2100 shown in Figure 12B includes a computing unit 2110, an illuminance sensor 2101, a microphone 2102, an upper camera 2103, a speaker 2104, a display 2105, a lower camera 2106, an obstacle sensor 2107, and a movement mechanism 2108.

[0392] The microphone 2102 has the function of detecting the user's voice and ambient sounds. The speaker 2104 has the function of emitting sound. The robot 2100 can communicate with the user using the microphone 2102 and speaker 2104.

[0393] The display 2105 has the function of displaying various types of information. The robot 2100 can display the information desired by the user on the display 2105. The display 2105 may be equipped with a touch panel. The display 2105 may also be a detachable information terminal, and by installing it in a fixed position on the robot 2100, charging and data transfer can be made possible.

[0394] The upper camera 2103 and the lower camera 2106 have the function of imaging the area around the robot 2100. In addition, the obstacle sensor 2107 can detect the presence or absence of obstacles in the direction of travel when the robot 2100 moves forward using the movement mechanism 2108. The robot 2100 can recognize its surrounding environment and move safely using the upper camera 2103, the lower camera 2106 and the obstacle sensor 2107. The light-emitting device according to one aspect of the present invention can be used in the display 2105.

[0395] Figure 12C shows an example of a goggle-type display. The goggle-type display includes, for example, a housing 5000, a display unit 5001, a speaker 5003, an LED lamp 5004, operation keys (including a power switch or operation switch), connection terminals 5006, a sensor 5007 (including functions for measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation), a microphone 5008, a display unit 5002, a support unit 5012, an earphone 5013, etc.

[0396] A light-emitting device according to one aspect of the present invention can be used in the display unit 5001 and the display unit 5002.

[0397] Figure 13 shows an example in which the light-emitting device described in any one of Embodiments 1 to 4 is used in a desk lamp, which is a lighting device. The desk lamp shown in Figure 13 has a housing 2001 and a light source 2002, and the lighting device described in Embodiment 8 may be used as the light source 2002.

[0398] Figure 14 shows an example of using the light-emitting device described in any one of Embodiments 1 to 4 as an indoor lighting device 3001. Since the light-emitting device described in any one of Embodiments 1 to 4 is a light-emitting device with high luminous efficiency, it can be used as a lighting device with low power consumption. Furthermore, since the light-emitting device described in any one of Embodiments 1 to 4 can be made to cover a large area, it can be used as a large-area lighting device. In addition, since the light-emitting device described in any one of Embodiments 1 to 4 is thin, it can be used as a thin lighting device.

[0399] The light-emitting device described in any one of Embodiments 1 to 4 can also be mounted on the windshield or dashboard of an automobile. Figure 15 shows one embodiment in which the light-emitting device described in any one of Embodiments 1 to 4 is used on the windshield or dashboard of an automobile. Display areas 5200 to 5203 are display areas provided using the light-emitting device described in any one of Embodiments 1 to 4.

[0400] Display area 5200 and display area 5201 are display devices equipped with a light-emitting device according to any one of Embodiments 1 to 4, which is installed on the windshield of an automobile. The light-emitting device according to any one of Embodiments 1 to 4 can be made into a so-called see-through display device, where the opposite side is visible, by making the first electrode and the second electrode from translucent electrodes. If the display is in a see-through state, it can be installed on the windshield of an automobile without obstructing the view. When providing transistors for driving, it is preferable to use translucent transistors such as organic transistors made of organic semiconductor materials or transistors using oxide semiconductors.

[0401] The display area 5202 is a display device equipped with a light-emitting device according to any one of Embodiments 1 to 4, which is provided on the pillar portion. By displaying images from an imaging means provided on the vehicle body on the display area 5202, the field of view obstructed by the pillar can be supplemented. Similarly, the display area 5203 provided on the dashboard portion can compensate for blind spots and enhance safety by displaying images from an imaging means provided on the outside of the vehicle, which is obstructed by the vehicle body. By displaying images in a way that supplements the parts that are not visible, safety checks can be performed more naturally and without discomfort.

[0402] Display area 5203 can provide various information by displaying navigation information, speed or RPM, mileage, fuel level, gear status, air conditioning settings, etc. The display items and layout can be changed as needed to suit the user's preferences. This information can also be provided in display areas 5200 to 5202. Furthermore, display areas 5200 to 5203 can also be used as lighting devices.

[0403] Figures 16A to 16C also show a foldable portable information terminal 9310. Figure 16A shows the portable information terminal 9310 in its unfolded state. Figure 16B shows the portable information terminal 9310 in an intermediate state, either unfolded or folded. Figure 16C shows the portable information terminal 9310 in its folded state. The portable information terminal 9310 offers excellent portability in its folded state and excellent readability of the display due to its seamless, wide display area in its unfolded state.

[0404] The display panel 9311 is supported by three housings 9315 connected by a hinge 9313. The display panel 9311 may also be a touch panel (input / output device) equipped with a touch sensor (input device). Furthermore, the display panel 9311 can be reversibly transformed from an unfolded state to a folded state by bending the two housings 9315 via the hinge 9313. A light-emitting device according to one aspect of the present invention can be used in the display panel 9311.

[0405] Furthermore, the configuration shown in this embodiment can be used by appropriately combining the configurations shown in Embodiments 1 to 4.

[0406] As described above, the application range of the light-emitting device equipped with the light-emitting device described in any one of Embodiments 1 to 4 is extremely broad, and this light-emitting device can be applied to electronic devices in all fields. By using the light-emitting device described in any one of Embodiments 1 to 4, it is possible to obtain electronic devices with low power consumption.

[0407] This embodiment can be appropriately combined with other embodiments shown in this specification. [Examples]

[0408] In this embodiment, a light-emitting device 1 and a light-emitting device 2 according to one aspect of the present invention will be described with reference to Figures 17 to 24.

[0409] Figure 17 is a diagram illustrating the configuration of the light-emitting device 150.

[0410] Figure 18 illustrates the current density-luminance characteristics of light-emitting device 1 and light-emitting device 2.

[0411] Figure 19 illustrates the luminance-current efficiency characteristics of light-emitting device 1 and light-emitting device 2.

[0412] Figure 20 illustrates the voltage-luminance characteristics of light-emitting device 1 and light-emitting device 2.

[0413] Figure 21 illustrates the voltage-current characteristics of light-emitting device 1 and light-emitting device 2.

[0414] Figure 22 illustrates the luminance-blue index characteristics of light-emitting device 1 and light-emitting device 2.

[0415] Figure 23 shows the light-emitting devices 1 and 2 at 1000 cd / m². 2 This diagram illustrates the emission spectrum when the light source is emitted at a specific brightness level.

[0416] Figure 24 shows 50 mA / cm². 2 This figure illustrates the change in normalized brightness over time when light-emitting devices 1 and 2 are illuminated at a constant current density.

[0417] <Light-emitting device 1> The light-emitting device 1 described in this embodiment has the same configuration as the light-emitting device 150 (see Figure 17). The light-emitting device 150 includes an electrode 101, an electrode 102, a unit 103, and a layer 104. The unit 103 is sandwiched between electrodes 101 and 102, and the unit 103 comprises layers 111, 112, and 113. Layer 111 is sandwiched between layers 112 and 113, and layer 111 contains a light-emitting material. Layer 113 is sandwiched between layer 111 and electrode 102, and layer 113 contains the organic compound BPM. The organic compound BPM comprises a π-electron-deficient heteroaromatic ring skeleton and a π-electron-excess heteroaromatic ring skeleton. Note that layer 113 includes layer 113(1) and layer 113(2), and layer 112 includes layer 112(1) and layer 112(2). Layer 104 is sandwiched between electrode 551 and unit 103, and layer 104 is in contact with electrode 101. Layer 104 contains organic compound HM1 and organic compound AM1. Organic compound AM1 is electron-accepting to organic compound HM1, and layer 104 contains 1 × 10⁻¹⁶ 4 [Ω cm] or more 1×10 7 It has a resistivity of [Ω·cm] or less.

[0418] Configuration of Light-Emitting Device 1 Table 1 shows the configuration of the light-emitting device 1. The structural formulas of the materials used in the light-emitting device described in this embodiment are shown below. In the table of this embodiment, subscripts and superscripts are written in standard size for convenience. For example, subscripts used in abbreviations and superscripts used in units are written in standard size in the table. These descriptions in the table can be interpreted with reference to the description in the specification.

[0419] [Table 1]

[0420] [ka]

[0421] 《Method for fabricating light-emitting device 1》 The light-emitting device 1 described in this embodiment was fabricated using a method comprising the following steps.

[0422] [Step 1] In the first step, a reflective film REF was formed. Specifically, it was formed by sputtering using silver (Ag) as the target.

[0423] The reflective film REF contains Ag and has a thickness of 100 nm.

[0424] [Step 2] In the second step, electrodes 101 were formed on the reflective film REF. Specifically, they were formed by sputtering using indium tin oxide (ITSO), which contains silicon or silicon oxide, as the target.

[0425] Electrode 101 contains ITSO and has a thickness of 85 nm and 4 mm 2 It has an area of ​​(2mm x 2mm).

[0426] Next, the substrate on which the electrodes 101 were formed was washed with water, fired at 200°C for 1 hour, and then subjected to UV ozone treatment for 370 seconds. -4 The substrate was introduced into a vacuum deposition apparatus where the internal pressure was reduced to approximately Pa, and vacuum firing was performed at 170°C for 30 minutes in the heating chamber within the vacuum deposition apparatus. After that, the substrate was allowed to cool for about 30 minutes.

[0427] [Step 3] In the third step, a layer 104 was formed on the electrode 101. Specifically, the material was co-deposited using a resistance heating method.

[0428] Layer 104 contains N,N-bis(4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviated as BBABnf) and an electron-accepting material (abbreviated as OCHD-003) in a ratio of BBABnf:OCHD-003 = 1:0.1 (by weight), and has a thickness of 10 nm. The HOMO level of BBABnf is -5.6 eV (see Figure 17B). The electron-accepting material OCHD-003 contains fluorine and has a molecular weight of 672.

[0429] [Step 4] In the fourth step, layer 112(1) was formed on layer 104. Specifically, the material was deposited using a resistance heating method.

[0430] Layer 112(1) contains BBABnf and has a thickness of 20 nm.

[0431] [Step 5] In the fifth step, layer 112(2) was formed on layer 112(1). Specifically, the material was deposited using a resistance heating method.

[0432] Layer 112(2) contains 3,3'-(naphthalene-1,4-diyl)bis(9-phenyl-9H-carbazole) (abbreviated as PCzN2) and has a thickness of 10 nm.

[0433] [Step 6] In the sixth step, layer 111 was formed on layer 112(2). Specifically, the material was co-deposited using the resistance heating method.

[0434] Layer 111 contains 9-(1-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviated as αN-βNPAnth) and 3,10-bis[N-(9-phenyl-9H-carbazol-2-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviated as 3,10PCA2Nbf(IV)-02) in a weight ratio of αN-βNPAnth:3,10PCA2Nbf(IV)-02 = 1:0.015, and has a thickness of 25 nm.

[0435] [Step 7] In the seventh step, layer 113(1) was formed on layer 111. Specifically, the material was deposited using a resistance heating method.

[0436] Layer 113(1) contains 2-[4'-(9-phenyl-9H-carbazol-3-yl)-3,1'-biphenyl-1-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mpPCBPDBq) and has a thickness of 20 nm.

[0437] 2mpPCBPDBq possesses a carbazole skeleton. Furthermore, 2mpPCBPDBq has a HOMO level in the range of -6.0 eV to -5.6 eV (see Figure 17B). This facilitates the movement of holes from layer 111 to layer 113(1). It also allows for a moderate expansion of the region contributing to luminescence near layer 111.

[0438] [Step 8] In the eighth step, layer 113(2) was formed on layer 113(1). Specifically, the material was deposited using a resistance heating method.

[0439] Layer 113(2) contains 2,9-di(2-naphthyl)-4,7-diphenyl-1,10-phenanthroline (abbreviated as NBPhen) and has a thickness of 10 nm.

[0440] [Step 9] In the ninth step, layer 105 was formed on layer 113(2). Specifically, the material was deposited using a resistance heating method.

[0441] Layer 105 contains LiF and has a thickness of 1 nm.

[0442] [Step 10] In the tenth step, an electrode 102 was formed on layer 105. Specifically, the material was co-deposited using a resistance heating method.

[0443] The electrode 102 contains Ag and Mg in an Ag:Mg = 1:0.1 (volume ratio) and has a thickness of 15 nm.

[0444] [Step 11] In the 11th step, a layer CAP was formed on electrode 102. Specifically, the material was deposited using a resistance heating method.

[0445] The layer CAP contains 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II) and has a thickness of 80 nm.

[0446] Operating characteristics of the light-emitting device 1 When power was supplied, the light-emitting device 1 emitted light EL1 (see Figure 17). The operating characteristics of the light-emitting device 1 were measured at room temperature (see Figures 18 to 24). A spectroradiometer (Topcon SR-UL1R) was used to measure luminance, CIE chromaticity, and emission spectrum. The characteristics of other light-emitting devices, whose configurations will be described later, are also listed in Table 2.

[0447] The fabricated light-emitting device has a brightness of 1000 cd / m². 2 Table 2 shows the main initial characteristics and reliability test results when the device was luminescent to a certain degree.

[0448] The Blue Index (BI) is one of the indicators that represent the characteristics of a blue light-emitting device, and it is the value obtained by dividing the current efficiency (cd / A) by the y-chromaticity. Generally, blue light with high color purity is useful for representing a wide color gamut. Also, the higher the color purity of the blue light, the lower the y-chromaticity tends to be. Therefore, the value obtained by dividing the current efficiency (cd / A) by the y-chromaticity serves as an indicator of the usefulness of a blue light-emitting device. In other words, a blue light-emitting device with a high BI is suitable for display devices that have a wide color gamut and high efficiency.

[0449] A light-emitting device with a constant current density (50 mA / cm²) 2The reliability was evaluated by emitting light using (see Figure 24). The ratio of the brightness after 310 hours to the initial brightness was used for evaluation.

[0450] [Table 2]

[0451] Light-emitting device 1 was found to exhibit good characteristics. For example, light-emitting device 1 showed higher reliability compared to comparative light-emitting devices 1 and 2. 2mpPCBPDBq has a carbazole skeleton that exhibits hole transport properties and has a HOMO level of -5.81 eV. The αN-βNPAnth used in layer 111 has a HOMO level of -5.85 eV. The transfer of holes from layer 111 using αN-βNPAnth to layer 113(1) using 2mpPCBPDBq is a transfer from a deep HOMO level to a shallow HOMO level, making it easy. Furthermore, it can reduce the accumulation of holes between layer 111 and layer 113(1).

[0452] <Light-emitting device 2> The light-emitting device 2 fabricated in this embodiment has the same configuration as the light-emitting device 150 (see Figure 17).

[0453] Configuration of Light-Emitting Device 2 The configuration of light-emitting device 2 differs from that of light-emitting device 1 in layer 113(1). Specifically, it differs from light-emitting device 1 in that it contains 3-[3,5-di(carbazol-9-yl)phenyl]phenanthro[9,10-b]pyrazine (abbreviated as 2Cz2PDBq) instead of 2mpPCBPDBq.

[0454] 《Method for fabricating light-emitting device 2》 The light-emitting device 2 described in this embodiment was fabricated using a method comprising the following steps.

[0455] The method for fabricating light-emitting device 2 differs from that of light-emitting device 1 in that 2Cz2PDBq is used instead of 2mpPCBPDBq in the step of forming layer 113(1). Here, the differences will be explained in detail, and the parts where the same method is used will refer to the explanation above.

[0456] [Step 7] In the seventh step, layer 113(1) was formed on layer 111. Specifically, the material was deposited using a resistance heating method.

[0457] Layer 113(1) contains 2Cz2PDBq and has a thickness of 20 nm.

[0458] Operating characteristics of the light-emitting device 2 When power was supplied, the light-emitting device 2 emitted light EL1 (see Figure 17). The operating characteristics of the light-emitting device 2 were measured at room temperature (see Figures 18 to 24). A spectroradiometer (Topcon SR-UL1R) was used to measure luminance, CIE chromaticity, and emission spectrum.

[0459] The fabricated light-emitting device has a brightness of 1000 cd / m². 2 Table 2 shows the main initial characteristics and reliability test results when the device was luminescent to a certain degree.

[0460] Light-emitting device 2 was found to exhibit good characteristics. For example, light-emitting device 2 showed higher reliability compared to comparative light-emitting device 1 and comparative light-emitting device 2.

[0461] (Reference example) The comparative light-emitting device 1 described in this example has the same configuration as the light-emitting device 150 (see Figure 17).

[0462] Configuration of comparative light-emitting device 1 The configuration of comparative light-emitting device 1 differs from that of light-emitting device 1 in layers 113(1) and 113(2).

[0463] Layer 113(1) differs from light-emitting device 1 in that it has a thickness of 10 nm instead of 20 nm. It also differs from light-emitting device 1 in that it contains 2-[3-(3'-dibenzothiophen-4-yl)biphenyl]dibenzo[f,h]quinoxaline (abbreviated as 2mDBTBPDBq-II) instead of 2mpPCBPDBq. 2mpPCBPDBq has a carbazole skeleton that exhibits hole transport and has a HOMO level of -5.81 eV. On the other hand, 2mDBTBPDBq-II has a thiophene skeleton that exhibits hole transport, but has a HOMO level of -6.22 eV. The αN-βNPAnth used in layer 111 has a HOMO level of -5.85 eV.

[0464] The transfer of holes from layer 111 using αN-βNPAnth to layer 113(1) using 2mDBTBPDBq-II is a transfer from a shallow HOMO level to a deep HOMO level, which is more difficult compared to the transfer of holes from layer 111 using αN-βNPAnth to layer 113(1) using 2mpPCBPDBq.

[0465] Layer 113(2) differs from light-emitting device 1 in that it has a thickness of 20 nm instead of 10 nm.

[0466] The structural formula of the material used in comparative light-emitting device 1, as described in this reference example, is shown below.

[0467] [ka]

[0468] 《Method for fabricating comparative light-emitting device 1》 The comparative light-emitting device 1 described in this reference example was fabricated using a method comprising the following steps.

[0469] Note that the fabrication method for comparative light-emitting device 1 differs from that of light-emitting device 1 in that, in the step of forming layer 113(1), the thickness is changed from 20 nm to 10 nm and 2m DBTBPDBq-II is used instead of 2mpPCBPDBq. Also, in the step of forming layer 113(2), the thickness is changed from 10 nm to 20 nm, which is another difference from that of light-emitting device 1. Here, the differences will be explained in detail, and the above explanation will be used as a reference for parts where the same method is used.

[0470] [Step 7] In the seventh step, layer 113(1) was formed on layer 111. Specifically, the material was deposited using a resistance heating method.

[0471] Layer 113(1) contains 2mDBTBPDBq-II and has a thickness of 10 nm.

[0472] [Step 8] In the eighth step, layer 113(2) was formed on layer 113(1). Specifically, the material was deposited using a resistance heating method.

[0473] Layer 113(2) contains NBPhen and has a thickness of 20 nm.

[0474] Configuration of comparative light-emitting device 2 The configuration of the comparative light-emitting device 2 differs from that of the light-emitting device 1 in layers 113(1) and 113(2).

[0475] Layer 113(1) differs from light-emitting device 1 in that it contains 2-{4-[9,10-di(2-naphthyl)-2-anthryl]phenyl}-1-phenyl-1H-benzimidazole (abbreviated as ZADN) and 8-quinolinolato-lithium (abbreviated as Liq) in a weight ratio of 1:1, instead of 2mpPCBPDBq. ZADN has an imidazole skeleton, which is a π-electron-deficient heteroaromatic ring skeleton, but does not have a π-electron-rich heteroaromatic ring skeleton.

[0476] The structural formula of the material used in comparative light-emitting device 2, as described in this example, is shown below.

[0477] [ka]

[0478] 《Method for fabricating comparative light-emitting device 2》 The comparative light-emitting device 2 described in this reference example was fabricated using a method comprising the following steps.

[0479] The method for fabricating comparative light-emitting device 2 differs from that of light-emitting device 1 in that, in the step of forming layer 113(1), a material in which ZADN and Liq are mixed in a weight ratio of 1:1 is used instead of 2mpPCBPDBq. Here, the differences will be explained in detail, and the parts where the same method is used will refer to the explanation above.

[0480] [Step 7] In the seventh step, layer 113(1) was formed on layer 111. Specifically, the material was deposited using a resistance heating method.

[0481] Layer 113(1) contains ZADN and Liq in a ZADN:Liq = 1:1 (by weight ratio) and has a thickness of 20 nm. [Explanation of Symbols]

[0482] AM1: Organic compound, BPM: Organic compound, EL1: Light, EL1_2: Light, EL2: Light, HM1: Organic compound, HM2: Organic compound, HOMO1: HOMO level, HOMO2: HOMO level, HOMO3: HOMO level, 101: Electrode, 102: Electrode, 103: Unit, 103_2: Unit, 103S: Unit, 103X: Unit, 103Y: Unit, 104: Layer, 104X: Layer, 104XY: Gap, 104Y: Layer, 105: Layer, 105_2: Layer, 106: Intermediate layer, 106_1: Layer, 106_2: Layer, 111: Layer, 111X: Layer, 111Y: Layer, 112: Layer, 112X: Layer, 112Y: Layer, 113: Layer, 113X: Layer, 113Y: Layer, 114N: Layer, 114P: Layer, 114S: Layer, 150: Light-emitting device, 400: Substrate, 401: Electrode, 403: EL layer, 404: Electrode, 405: Sealing material, 406: Sealing material, 407: Encapsulation substrate, 412: Pad, 420: IC chip, 521: Insulating film, 528: Insulating film, 550: Light-emitting device, 550S: Optical functional device, 550X: Light-emitting device, 550Y: Light-emitting device, 551: Electrode, 551S: Electrode, 551X: Electrode, 551XY: Gap, 551Y : Electrode, 552: Electrode, 573: Insulating film, 573A: Insulating film, 573B: Insulating film, 601: Source line drive circuit, 602: Pixel section, 603: Gate line drive circuit, 604: Encapsulation substrate, 605: Sealing material, 607: Space, 608: Wiring, 610: Element substrate, 611: Switching FET, 612: Current control FET, 613: Electrode, 614: Insulator, 616: EL layer, 617: Electrode, 618: Light-emitting device, 623: FET, 700: Functional panel, 951: Substrate, 952: Electrode, 953: Insulating layer, 954: Partition layer, 955: EL layer, 956: Electrode, 1001 :Substrate, 1002:Underlayer insulating film, 1003:Gate insulating film, 1006:Gate electrode, 1007:Gate electrode, 1008:Gate electrode, 1020:Interlayer insulating film, 1021:Interlayer insulating film, 1022:Electrode, 1024B:Electrode, 1024G:Electrode, 1024R:Electrode, 1024W:Electrode, 1025:Block, 1028:EL layer, 1029:Electrode, 1031:Encapsulating substrate, 1032:Sealing material, 1033:Base material, 1034B:Colored layer, 1034G:Colored layer, 1034R:Colored layer, 1035:Black matrix, 1036:Overcoat layer, 1037:Interlayer insulating film,1040: Pixel section, 1041: Drive circuit section, 1042: Peripheral section, 2001: Housing, 2002: Light source, 2100: Robot, 2101: Illuminance sensor, 2102: Microphone, 2103: Upper camera, 2104: Speaker, 2105: Display, 2106: Lower camera, 2107: Obstacle sensor, 2108: Movement mechanism, 2110: Processing unit, 3001: Lighting device, 5000: Housing, 5001: Display unit, 5002: Display unit, 5003: Speaker, 5004: LED lamp, 5006: Connection terminal, 5007: Sensor, 5008: Microphone, 5012: Support section, 5013: Earphone, 5100: Cleaning robot, 5101: Display, 5102: Camera, 5103: Brush , 5104: Operation button, 5120: Trash, 5140: Portable electronic device, 5200: Display area, 5201: Display area, 5202: Display area, 5203: Display area, 7101: Housing, 7103: Display unit, 7105: Stand, 7107: Display unit, 7109: Operation key, 7110: Remote control unit, 7201: Main unit, 7202: Housing, 7203: Display unit, 7204: Keyboard, 7205: External connection port, 7206: Pointing device, 7210: Display unit, 7401: Housing, 7402: Display unit, 7403: Operation button, 7404: External connection port, 7405: Speaker, 7406: Microphone, 9310: Portable information terminal, 9311: Display panel, 9313: Hinge, 9315: Housing,

Claims

1. The first electrode and The second electrode and The first unit and It has a first layer, The first unit is sandwiched between the first electrode and the second electrode, The first unit comprises a second layer, a third layer, and a fourth layer, The second layer is sandwiched between the third layer and the fourth layer. The second layer described above includes a luminescent material, The fourth layer is sandwiched between the second layer and the second electrode. The fourth layer comprises the first organic compound, The first organic compound comprises a π-electron-deficient heteroaromatic ring skeleton and a π-electron-excess heteroaromatic ring skeleton, The first layer is sandwiched between the first electrode and the first unit. The first layer is in contact with the first electrode, The first layer comprises a second organic compound and a third organic compound. The third organic compound has electron-accepting properties with respect to the second organic compound, The first layer is 1 × 10 ４ [Ω・cm] or more 1×10 ７ Having a resistivity of [Ω・cm] or less, The second layer does not contain the first organic compound. A light-emitting device that emits blue light.

2. In claim 1, The first organic compound comprises a first HOMO level, The first HOMO level is in the range of -6.0 eV to -5.6 eV in the light-emitting device.

3. In claim 1 or claim 2, The first organic compound is a light-emitting device comprising a diazine skeleton and a π-electron-rich heteroaromatic ring skeleton.

4. In claim 1 or claim 2, The first organic compound is a light-emitting device comprising a π-electron-deficient heteroaromatic ring skeleton and a carbazole skeleton.

5. In claim 1 or claim 2, The first organic compound is a light-emitting device represented by the following general formula (G1). 【Chemistry 1】 (However, in the above general formula (G1), D represents a substituted or unsubstituted quinoxalinyl group. E represents a substituted or unsubstituted carbazolyl group. Ar represents a substituted or unsubstituted arylene group. The aforementioned arylene group has 6 to 13 carbon atoms forming the ring.

6. In claim 1 or claim 2, The third organic compound has a LUMO level below -5.0 eV, The second organic compound has a second HOMO level, The light-emitting device has a second HOMO level in the range of -5.7 eV to -5.3 eV.

7. In claim 1 or claim 2, The first organic compound comprises a diazine skeleton and a π-electron-rich heteroaromatic ring skeleton, The third organic compound has a LUMO level below -5.0 eV, The second organic compound has a second HOMO level, The light-emitting device has a second HOMO level in the range of -5.7 eV to -5.3 eV.

8. In claim 1 or claim 2, The first organic compound comprises a π-electron-deficient heteroaromatic ring skeleton and a carbazole skeleton, The third organic compound has a LUMO level below -5.0 eV, The second organic compound has a second HOMO level, The light-emitting device has a second HOMO level in the range of -5.7 eV to -5.3 eV.

9. In claim 1 or claim 2, When the square root of the electric field strength [V / cm] is 600, the hole mobility of the second organic compound is 1 × 10⁻⁶. －３ A light-emitting device with a voltage of cm / Vs or less.

10. In claim 1 or claim 2, The first organic compound comprises a diazine skeleton and a π-electron-rich heteroaromatic ring skeleton, When the square root of the electric field strength [V / cm] is 600, the hole mobility of the second organic compound is 1 × 10⁻⁶. －３ A light-emitting device with a voltage of cm / Vs or less.

11. In claim 1 or claim 2, The first organic compound comprises a π-electron-deficient heteroaromatic ring skeleton and a carbazole skeleton, When the square root of the electric field strength [V / cm] is 600, the hole mobility of the second organic compound is 1 × 10⁻⁶. －３ A light-emitting device with a voltage of cm / Vs or less.

12. In claim 1 or claim 2, The third organic compound has a LUMO level below -5.0 eV, The second organic compound has a second HOMO level, The second HOMO level is in the range of -5.7 eV to -5.3 eV. When the square root of the electric field strength [V / cm] is 600, the hole mobility of the second organic compound is 1 × 10⁻⁶. －３ A light-emitting device with a voltage of cm / Vs or less.

13. In claim 1 or claim 2, The first organic compound comprises a diazine skeleton and a π-electron-rich heteroaromatic ring skeleton, The third organic compound has a LUMO level below -5.0 eV, The second organic compound has a second HOMO level, The second HOMO level is in the range of -5.7 eV to -5.3 eV. When the square root of the electric field strength [V / cm] is 600, the hole mobility of the second organic compound is 1 × 10⁻⁶. －３ A light-emitting device with a voltage of cm / Vs or less.

14. In claim 1 or claim 2, The first layer has a resistivity of 5×10 ４ [Ω·cm] or more and 1×10 ７ [Ω·cm] or less, and is a light-emitting device.

15. In claim 1 or claim 2, The third organic compound has a LUMO level below -5.0 eV, The second organic compound has a second HOMO level, The second HOMO level is in the range of -5.7 eV to -5.3 eV. The first layer is 5 × 10 ４ [Ω・cm] or more 1×10 ７ A light-emitting device having a resistivity of [Ω・cm] or less.

16. In claim 1 or claim 2, The third organic compound has a LUMO level below -5.0 eV, The second organic compound has a second HOMO level, The second HOMO level is in the range of -5.7 eV to -5.3 eV. The third layer is sandwiched between the first layer and the second layer. The third layer is in contact with the first layer, The third layer contains a fourth organic compound, The fourth organic compound has a third HOMO level, A light-emitting device in which the third HOMO level is in the range of -0.2 eV to 0 eV relative to the second HOMO level.

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