Semiconductor equipment
JP7885474B1Active Publication Date: 2026-07-06SEMICON ENERGY LAB CO LTD
Patent Information
- Application Number
- JP2026087324
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2009-01-22
- Filing Date
- 2026-05-25
- Publication Date
- 2026-07-06
- Estimated Expiration
- 2030-01-12
Smart Images
Figure 0007885474000001_ABST
Abstract
It suppresses transistor degradation. [Solution] The method comprises a first period and a second period. In the first period, the first transit The zista and the second transistor repeatedly switch on and off alternately, and the third transistor and The fourth transistor is turned off. During the second period, the first transistor and the second The transistor turns off, and the third and fourth transistors turn on alternately. It repeatedly switches between being on and off. In this way, the time the transistor is on can be shortened. Therefore, it suppresses the degradation of transistor characteristics.
Need to check novelty before this filing date? Find Prior Art
Citation Information
Patent Citations
Thin-film transistor display plate and display device including the same
JP2006039524A
Gate driver and driving method therefor
JP2007004167A
Gate driving circuit and display apparatus having the same
JP2008003602A
Display device, its driving method, and transformation method of screen display mode
JP2008058939A
Liquid crystal display device and electronic apparatus
JP2008107807A