Method for manufacturing a vapor deposition mask apparatus, apparatus for manufacturing a vapor deposition mask apparatus, and vapor deposition mask apparatus

Abstract

To provide a vapor deposition mask device capable of preventing the positional accuracy of a mask open hole to a substrate from being reduced in a deposition process, and provide a method and apparatus for manufacturing the same.SOLUTION: A method for manufacturing a vapor deposition mask device comprises steps of: arranging a frame 41 at a position where an opening overlaps a mask stage surface 61 of a mask stage 60 when viewed in a first direction D1; applying a tension to a mask 50 in a second direction D2 orthogonal to the first direction; and fixing the mask on a first frame surface 41a in the state of applying the tension to the mask. The mask stage surface is positioned on a second side S2 opposite to a first side S1 from the first frame surface, and in the step of applying the tension to the mask, the mask contacts the mask stage surface and the first frame surface.SELECTED DRAWING: Figure 19

Description

Technical Field

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[0001] Embodiments of the present disclosure relate to a method for manufacturing a vapor deposition mask device, a manufacturing apparatus for a vapor deposition mask device, and a vapor deposition mask device.

Background Art

[0002] In the field of display devices used in portable devices such as smartphones and tablet PCs, organic EL display devices have attracted attention. As a method and apparatus for manufacturing an organic semiconductor device such as an organic EL display device, a method and apparatus for forming pixels in a desired pattern using a mask having through holes formed in a desired pattern are known. For example, first, a mask fixed to a frame is combined with a substrate for an organic EL display device. Subsequently, a vapor deposition material containing an organic material is attached to the substrate through the through holes of the mask. By performing such a vapor deposition process, pixels having a vapor deposition layer containing the vapor deposition material can be formed on the substrate in a pattern corresponding to the pattern of the through holes of the mask.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In the vapor deposition process of attaching the vapor deposition material to the substrate, it is required to form pixels at desired positions on the substrate. Therefore, it is required to suppress a decrease in the positional accuracy of the through holes of the mask with respect to the substrate during the vapor deposition process.

Means for Solving the Problems

[0005] In a method for manufacturing a vapor deposition mask device according to an embodiment of the present disclosure, the vapor deposition mask device is A frame having a first frame surface and a second frame surface located to the first side in the first direction from the first frame surface, and including an opening extending from the first frame surface to the second frame surface, A mask is provided which includes through holes and is fixed to the first frame surface, The aforementioned manufacturing method is The steps include: positioning the frame such that, when viewed along the first direction, the opening overlaps the mask stage surface of the mask stage; A step of applying tension to the mask in a second direction perpendicular to the first direction, The process includes the step of fixing the mask to the first frame surface while tension is applied to the mask, The mask stage surface is located on the second side opposite to the first side from the first side, compared to the first frame surface. In the step of applying tension to the mask, the mask comes into contact with the mask stage surface and the first frame surface. [Effects of the Invention]

[0006] According to this disclosure, it is possible to suppress the decrease in positional accuracy of the through-holes of the mask relative to the substrate during the deposition process. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 is a cross-sectional view showing an example of an organic device. [Figure 2] Figure 2 is a cross-sectional view showing a magnified view of the organic device in Figure 1. [Figure 3] Figure 3 is a cross-sectional view showing an example of a vapor deposition apparatus. [Figure 4] Figure 4 is a plan view showing an example of a vapor deposition mask apparatus. [Figure 5] Figure 5 is a plan view showing an example of the intermediate section of a mask in a vapor deposition mask apparatus. [Figure 6] Figure 6 is a cross-sectional view showing an example of the cross-sectional shape of a through-hole in a mask. [Figure 7]FIG. 7 is a cross-sectional view showing an example when the vapor deposition mask device of FIG. 4 is cut along the second direction. [Figure 8] [[ID=,3]]FIG. 8 is an enlarged cross-sectional view showing the vapor deposition mask device shown in FIG. 7 (a cross-sectional view corresponding to part VIII of FIG. 7). [Figure 9] FIG. 9 is a plan view showing an example of a manufacturing device for a vapor deposition mask device. [Figure 10] FIG. 10 is a cross-sectional view showing an example when the manufacturing device for the vapor deposition mask device of FIG. 9 is cut along the second direction. [Figure 11] FIG. 11 is a diagram showing the process of manufacturing a vapor deposition mask device, and is a diagram showing the process of forming a resist pattern on a metal plate. [Figure 12] FIG. 12 is a diagram showing the process of manufacturing a vapor deposition mask device, and is a diagram showing the first surface etching process. [Figure 13] FIG. 13 is a diagram showing the process of manufacturing a vapor deposition mask device, and is a diagram showing the second surface etching process. [Figure 14] FIG. 14 is a diagram showing the process of manufacturing a vapor deposition mask device, and is a diagram showing the process of removing the resin and the resist pattern from the metal plate. [Figure 15] FIG. 15 is a diagram showing the process of manufacturing a vapor deposition mask device. [Figure 16] FIG. 16 is a diagram showing the process of manufacturing a vapor deposition mask device. [Figure 17] FIG. 17 is a diagram showing the process of manufacturing a vapor deposition mask device. [Figure 18] FIG. 18 is a diagram showing the process of manufacturing a vapor deposition mask device. [Figure 19] FIG. 19 is a diagram showing the process of manufacturing a vapor deposition mask device. [Figure 20] FIG. 20 is a diagram showing the process of manufacturing a vapor deposition mask device. [Figure 21] FIG. 21 is a diagram showing the process of manufacturing a vapor deposition mask device. [Figure 22] FIG. 22 is a diagram showing the process of vapor-depositing a vapor deposition material on a substrate. [Figure 23] FIG. 23 is a diagram showing a process of depositing a deposition material on a substrate. [Figure 24] FIG. 24 is a diagram showing a process of depositing a deposition material on a substrate. [Figure 25] FIG. 25 is a cross-sectional view showing a modified example of a deposition mask device. [Figure 26] FIG. 26 is a cross-sectional view showing a modified example of a deposition mask device. [Figure 27] FIG. 27 is a cross-sectional view showing a modified example of a deposition mask device. [Figure 28] FIG. 28 is a plan view showing a modified example of a deposition mask device.

BEST MODE FOR CARRYING OUT THE INVENTION

[0008] In this specification and the accompanying drawings, unless otherwise specified, terms referring to a substance that forms the basis of a certain structure, such as "substrate", "base material", "plate", "sheet", "film", etc., are not distinguished from each other based only on the difference in name.

[0009] In this specification and the accompanying drawings, unless otherwise specified, terms specifying the shape, geometric conditions, and their degrees, such as terms like "parallel" and "orthogonal", and values of length and angle, etc., are not restricted to their strict meanings, and are to be interpreted to include a range where similar functions can be expected.

[0010] In this specification and the accompanying drawings, unless otherwise specified, when a certain structure, such as a certain member or a certain region, is "above", "below", "on the upper side", "on the lower side", "above", or "below" another member or another region, etc., it includes the case where a certain structure is in direct contact with another structure. Further, it also includes the case where another structure is included between a certain structure and another structure, that is, the case of indirect contact. Also, unless otherwise specified, the terms "above", "upper side", "above", or "below", "lower side", "below" may be reversed in the vertical direction.

[0011] In this specification and these drawings, unless otherwise specified, identical or similarly functioning parts are denoted by the same or similar reference numerals, and repeated explanations may be omitted. Furthermore, the dimensional ratios in the drawings may differ from actual ratios for illustrative purposes, and some components may be omitted from the drawings.

[0012] Unless otherwise specified in this specification and these drawings, one embodiment of this specification may be combined with other embodiments to the extent that it does not conflict with the other embodiments. Furthermore, other embodiments may be combined with each other to the extent that it does not conflict with the other embodiments.

[0013] In this specification and these drawings, unless otherwise specified, when multiple steps are disclosed regarding a method such as a manufacturing method, other steps not disclosed may be performed between the disclosed steps. Furthermore, the order of the disclosed steps is arbitrary as long as it does not cause inconsistencies.

[0014] In this specification and these drawings, unless otherwise specified, a numerical range represented by the symbol "~" includes the numbers placed before and after the symbol "~". For example, the numerical range defined by the expression "34~38 mass%" is the same as the numerical range defined by the expression "34 mass% or more and 38 mass% or less".

[0015] In this specification and these drawings, unless otherwise specified, the description will focus on an example relating to a deposition mask and a method for manufacturing the same, used to pattern organic materials onto a substrate in a desired pattern when manufacturing an organic EL display device, as described in one embodiment of this specification. However, this embodiment is not limited to such an application and can be applied to deposition masks used in various applications.

[0016] Hereinafter, one embodiment of the present disclosure will be described in detail with reference to the drawings. Note that the embodiment described below is merely one example of the embodiments of the present disclosure, and the present disclosure is not construed to be limited to these embodiments only.

[0017] A first aspect of this disclosure is a method for manufacturing an evaporation mask apparatus, The aforementioned deposition mask apparatus is A frame having a first frame surface and a second frame surface located to the first side in the first direction from the first frame surface, and including an opening extending from the first frame surface to the second frame surface, A mask is provided which includes through holes and is fixed to the first frame surface, The aforementioned manufacturing method is The steps include: positioning the frame such that, when viewed along the first direction, the opening overlaps the mask stage surface of the mask stage; A step of applying tension to the mask in a second direction perpendicular to the first direction, The process includes the step of fixing the mask to the first frame surface while tension is applied to the mask, The mask stage surface is located on the second side opposite to the first side from the first side, compared to the first frame surface. In the step of applying tension to the mask, the mask comes into contact with the mask stage surface and the first frame surface, in this method of manufacturing a vapor deposition mask apparatus.

[0018] A second aspect of this disclosure is a method for manufacturing a vapor deposition mask apparatus according to the first aspect described above, wherein the distance between the mask stage surface and the first frame surface along the first direction may be 0.5 mm or more and 2.0 mm or less.

[0019] A third aspect of the present disclosure is a method for manufacturing a vapor deposition mask apparatus according to the first or second aspect described above, wherein the mask includes a first region including the through-hole and a second region located around the first region, and the mask stage surface may overlap the entire area of ​​the first region when viewed along the first direction.

[0020] A fourth aspect of this disclosure is a method for manufacturing a vapor deposition mask apparatus according to each of the first to third aspects described above, wherein the method for manufacturing the vapor deposition mask apparatus may further include a step of adjusting the position of the mask before the step of fixing the mask to the first frame surface.

[0021] A fifth aspect of this disclosure is a method for manufacturing a vapor deposition mask apparatus according to each of the first to fourth aspects described above, wherein the thickness of the mask may be 50 μm or less.

[0022] A sixth aspect of this disclosure is a manufacturing apparatus for a vapor deposition mask apparatus, The aforementioned deposition mask apparatus is A frame having a first frame surface and a second frame surface located to the first side in the first direction from the first frame surface, and including an opening extending from the first frame surface to the second frame surface, A mask is provided which includes through holes and is fixed to the first frame surface, The manufacturing apparatus for the aforementioned vapor deposition mask device is, A clamp that applies tension to the mask in a second direction perpendicular to the first direction, A frame stage that supports the frame, A mask stage having a mask stage surface that, when viewed along the first direction, is positioned such that the opening of the frame supported by the frame stage overlaps with it, The mask is provided with a fixing mechanism for fixing it to the frame, The mask stage surface is a manufacturing apparatus for a vapor deposition mask apparatus, located on the second side opposite to the first side from the first side of the first frame surface.

[0023] A seventh aspect of this disclosure is a manufacturing apparatus for a vapor deposition mask apparatus according to the sixth aspect described above, wherein the distance between the mask stage surface and the first frame surface along the first direction may be 0.5 mm or more and 2.0 mm or less.

[0024] An eighth aspect of the present disclosure is a manufacturing apparatus for a vapor deposition mask apparatus according to the sixth or seventh aspect described above, wherein the mask stage may be movable along the first direction.

[0025] A ninth aspect of the present disclosure is a manufacturing apparatus for a vapor deposition mask apparatus according to each of the sixth to eighth aspects described above, wherein the frame stage may be movable along the first direction.

[0026] A tenth aspect of the present disclosure is a manufacturing apparatus for a vapor deposition mask apparatus according to each of the sixth to ninth aspects described above, wherein the mask includes a first region including the through hole and a second region located around the first region, and the mask stage surface may overlap the entire area of ​​the first region when viewed along the first direction.

[0027] An eleventh aspect of this disclosure is a manufacturing apparatus for a vapor deposition mask apparatus according to each of the sixth to tenth aspects described above, wherein the manufacturing apparatus for the vapor deposition mask apparatus may further include an adjustment mechanism for adjusting the position of the mask.

[0028] A twelfth aspect of this disclosure is a manufacturing apparatus for a vapor deposition mask apparatus according to each of the sixth to eleventh aspects described above, wherein the thickness of the mask may be 50 μm or less.

[0029] A thirteenth aspect of this disclosure is an evaporation mask apparatus, A frame having a first frame surface and a second frame surface located on one side of the first frame surface in a first direction, and including an opening extending from the first frame surface to the second frame surface, A mask is provided which includes through holes and is fixed to the first frame surface, When viewed along the first direction, the mask bends to one side along the first direction in the region overlapping the opening, The aforementioned mask deflection amount is 1.1 mm or more and 15.3 mm or less, and this is a vapor deposition mask apparatus.

[0030] A fourteenth aspect of the present disclosure is a vapor deposition mask apparatus according to the thirteenth aspect described above, wherein the mask includes a first region including the through-hole and a second region located around the first region, and the first region may be located in a region in which the deflection amount of the mask is 0.3 mm or more and 4.2 mm or less.

[0031] A fifteenth aspect of this disclosure is a deposition mask apparatus according to the thirteenth or fourteenth aspect described above, wherein the thickness of the mask may be 50 μm or less.

[0032] A sixteenth aspect of this disclosure is a method for depositing a deposition material onto a substrate, The process of preparing a vapor deposition mask apparatus equipped with a mask, The process of preparing the aforementioned substrate, A step of placing the substrate on the mask of the deposition mask apparatus, The process includes a step of depositing the deposition material onto the substrate placed on the mask, The aforementioned deposition mask apparatus is A frame having a first frame surface and a second frame surface located on one side of the first frame surface in a first direction, and including an opening extending from the first frame surface to the second frame surface, The mask includes through holes and is fixed to the first frame surface, When viewed along the first direction, the mask bends to one side along the first direction in the region overlapping the opening, The deposition method is such that the maximum deflection amount of the mask is between 1.1 mm and 15.3 mm.

[0033] A 17th aspect of this disclosure is a vapor deposition apparatus for depositing a vapor deposition material, A vapor deposition source containing the vapor deposition material, Heater and, Equipped with a vapor deposition mask device, The aforementioned deposition mask apparatus is A frame having a first frame surface and a second frame surface located on one side of the first frame surface in a first direction, and including an opening extending from the first frame surface to the second frame surface, A mask is provided which includes through holes and is fixed to the first frame surface, When viewed along the first direction, the mask bends to one side along the first direction in the region overlapping the opening, The deposition apparatus has a maximum deflection amount of the mask of 1.1 mm or more and 15.3 mm or less.

[0034] Hereinafter, one embodiment of the present disclosure will be described in detail with reference to the drawings. Note that the embodiment described below is merely one example of the embodiments of the present disclosure, and the present disclosure is not construed to be limited to these embodiments only.

[0035] Figure 1 is a cross-sectional view showing an example of an organic device 100. The vapor deposition layer 130 of this organic device 100, which will be described later, is formed using a vapor deposition apparatus 10, which will be described later, equipped with a vapor deposition mask apparatus 40 (see Figure 3) according to one embodiment.

[0036] The organic device 100 may include a substrate 110 including a first surface 111 and a second surface 112 located opposite the first surface 111, and a plurality of elements 105 arranged along the in-plane direction of the first surface 111 of the substrate 110. Although not shown, the elements 105 may also be arranged in the depth direction of Figure 1. For example, the elements 105 may be arranged periodically in two arrangement directions in the in-plane direction of the first surface 111. The elements 105 may include a first electrode layer 120, a vapor-deposited layer 130 located on the first electrode layer 120, and a second electrode layer 140 located on the vapor-deposited layer 130.

[0037] Figure 2 is a cross-sectional view showing an enlarged view of the organic device 100 in Figure 1. The vapor-deposited layer 130 may include a first vapor-deposited layer 131 located on the first electrode layer 120 and a second vapor-deposited layer 132 located on the first electrode layer 120. The first vapor-deposited layer 131 and the second vapor-deposited layer 132 may be adjacent in the arrangement direction of the element 105 in a plan view. For example, in a plan view, the first electrode layer 120 overlapping the first vapor-deposited layer 131 and the first electrode layer 120 overlapping the second vapor-deposited layer 132 may be adjacent in the arrangement direction of the element 105.

[0038] Although not shown in the figures, the vapor-deposited layer 130 may include other vapor-deposited layers, such as a third vapor-deposited layer adjacent to the first vapor-deposited layer 131 or the second vapor-deposited layer 132 in the arrangement direction of the element 105.

[0039] As shown in Figure 2, the organic device 100 may include an insulating layer 160 located between two adjacent first electrode layers 120. The insulating layer 160 may contain, for example, polyimide. The insulating layer 160 may overlap the edges of the first electrode layers 120.

[0040] The substrate 110 may be a plate-shaped member having insulating properties. The substrate 110 may be transparent, allowing light to pass through. The substrate 110 may contain glass.

[0041] The thickness of the substrate 110 may be, for example, 0.1 mm or more, 0.3 mm or more, or 0.5 mm or more. The thickness of the substrate 110 may be, for example, 0.6 mm or less, 1.0 mm or less, or 2.0 mm or less. The range of the substrate 110 thickness may be defined by a first group consisting of 0.1 mm, 0.3 mm, and 0.5 mm, and / or a second group consisting of 0.6 mm, 1.0 mm, and 2.0 mm. The range of the substrate 110 thickness may be defined by a combination of any one value included in the first group and any one value included in the second group. The range of the substrate 110 thickness may be defined by a combination of any two values ​​included in the first group. The range of the substrate 110 thickness may be defined by a combination of any two values ​​included in the second group. For example, it may be 0.1 mm or more and 2.0 mm or less, 0.1 mm or more and 1.0 mm or less, 0.1 mm or more and 0.6 mm or less, 0.1 mm or more and 0.5 mm or less, 0.1 mm or more and 0.3 mm or less, 0.3 mm or more and 2.0 mm or less, 0.3 mm or more and 1.0 mm or less, 0.3 mm or more and 0.6 mm or less, 0.3 mm or more and 0.5 mm or less, 0.5 mm or more and 2.0 mm or less, 0.5 mm or more and 1.0 mm or less, 0.5 mm or more and 0.6 mm or less, 0.6 mm or more and 2.0 mm or less, 0.6 mm or more and 1.0 mm or less, and 1.0 mm or more and 2.0 mm or less.

[0042] The first electrode layer 120 may contain a conductive material. For example, the first electrode layer 120 may contain a metal, a conductive metal oxide, or other inorganic material. The first electrode layer 120 may also contain a transparent and conductive metal oxide, such as indium tin oxide.

[0043] The first deposition layer 131, the second deposition layer 132, and the third deposition layer may be organic layers containing organic materials. If the organic device 100 is an organic EL display device, the first deposition layer 131, the second deposition layer 132, and the third deposition layer may each be light-emitting layers. For example, the first deposition layer 131, the second deposition layer 132, and the third deposition layer may each be a red light-emitting layer, a green light-emitting layer, and a blue light-emitting layer.

[0044] The first deposition layer 131, the second deposition layer 132, and the third deposition layer may each be formed by depositing an organic material onto the substrate 110 through through-holes in a mask in a deposition apparatus equipped with a corresponding mask.

[0045] Although not shown in the diagram, the element 105 may include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, etc., located between the first electrode layer 120 and the vapor deposition layer 130, or between the vapor deposition layer 130 and the second electrode layer 140.

[0046] The second electrode layer 140 may contain a conductive material such as a metal. Examples of materials constituting the second electrode layer 140 include platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, carbon, and alloys thereof.

[0047] As shown in Figure 2, the second electrode layer 140 may extend across two adjacent deposition layers 130. Although not shown, the second electrode layer 140 may be formed such that there is a gap between the second electrode layer 140 located on two adjacent deposition layers 130.

[0048] Next, a vapor deposition apparatus 10 for forming a vapor deposition layer 130 on the first surface 111 of the substrate 110 will be described. Figure 3 is a longitudinal cross-sectional view showing an example of the vapor deposition apparatus 10.

[0049] As shown in Figure 3, the deposition apparatus 10 may include a deposition source 6, a heater 8, and a deposition mask device 40 inside. Although not shown, the deposition apparatus 10 may also include an exhaust means for creating a vacuum atmosphere inside the deposition apparatus 10. The deposition source 6 is, for example, a crucible and contains a deposition material 7 such as an organic light-emitting material. The heater 8 heats the deposition source 6 to evaporate the deposition material 7 under a vacuum atmosphere. The deposition mask device 40 is positioned opposite the crucible 6.

[0050] As shown in Figure 3, the deposition mask apparatus 40 may comprise a frame 41 and at least one mask 50 fixed to the frame 41. The frame 41 may have a first frame surface 41a to which the mask 50 is fixed, and a second frame surface 41b located on the opposite side of the first frame surface 41a. The second frame surface 41b may be located on one side (i.e., the first side S1) of the first frame surface 41a in the first direction D1, which is the thickness direction of the frame 41. The frame 41 may also include a first opening (i.e., an opening) 42 extending from the first frame surface 41a to the second frame surface 41b.

[0051] The mask 50 may be fixed to the first frame surface 41a of the frame 41 so as to cross the first opening 42 in a plan view. Alternatively, the mask 50 may be in contact with the substrate 110 in a state in which it is deformed to be convex toward the second side opposite to the first side S1 in the first direction D1.

[0052] The mask 50 of the deposition mask apparatus 40 of one deposition apparatus 10 may correspond to one type of deposition layer 130, for example, a first deposition layer 131. In this case, the manufacturing apparatus for the organic device 100 may include multiple deposition apparatuses 10. For example, the manufacturing apparatus for the organic device 100 may include a deposition apparatus 10 corresponding to the first deposition layer 131, a deposition apparatus 10 corresponding to the second deposition layer 132, and a deposition apparatus 10 corresponding to the third deposition layer. By sequentially feeding the substrate 110 into the multiple deposition apparatuses 10 and performing the deposition process, the first deposition layer 131, the second deposition layer 132, and the third deposition layer can be formed on the substrate 110.

[0053] The deposition mask apparatus 40 may be placed inside the deposition apparatus 10 such that the mask 50 faces the substrate 110, which is the object to which the deposition material 7 is to be deposited, as shown in Figure 3. The mask 50 may include a plurality of through holes 56 through which the deposition material 7 that has flown in from the deposition source 6 can pass. In the following description, the surface of the mask 50 that is located on the side of the substrate 110 will be referred to as the first surface 55a, and the surface located on the opposite side of the first surface 55a will be referred to as the second surface 55b.

[0054] As shown in Figure 3, the deposition apparatus 10 may be equipped with a substrate holder 2 for holding the substrate 110. This substrate holder 2 may be an electrostatic chuck that holds the substrate 110 using electrostatic force (Coulomb force). By having an electrostatic chuck for the substrate holder 2, even if the size of the substrate 110 increases, it is possible to suppress the substrate 110 from bending in the first direction D1 to the first side S1. This suppresses the large difference between the actual position and the design position of the through-holes 56 in the mask 50 when it is assembled with the substrate 110, due to the bending of the substrate 110. Furthermore, by having an electrostatic chuck for the substrate holder 2, the handling of the substrate 110 can be improved, and the substrate 110 can be easily handled even if the size of the substrate 110 increases. The size of the substrate 110 may be the so-called G6H (925mm x 1500mm), the so-called G8.5Q (1100mm x 1250mm), the so-called G8.5H (1250mm x 2200mm), or the so-called G8.5F (2200mm x 2500mm).

[0055] The substrate holder 2 may be movable along a first direction D1, which is the thickness direction of the substrate 110. The substrate holder 2 may also be movable along a second direction D2 (see Figure 4), which is the longitudinal direction of the mask 50, and a third direction D3 (see Figure 4), which is the width direction of the mask 50. Furthermore, the substrate holder 2 may be configured to control the tilt of the substrate 110. The planar shape of the substrate holder 2 may be larger than the planar shape of the substrate 110. This allows the entire substrate 110 to be in close contact with the substrate holder 2, and prevents bending of the substrate 110 even when the size of the substrate 110 is large. Note that the first direction D1, the second direction D2, and the third direction D3 may be orthogonal to each other.

[0056] The deposition apparatus 10 may include a mask holder 3 for holding the deposition mask apparatus 40, as shown in Figure 3. The mask holder 3 may be movable along a first direction D1, which is the thickness direction of the mask 50. The mask holder 3 may also be movable along a second direction D2 and a third direction D3. For example, the mask holder 3 may include a plurality of chucks attached to the outer edge of the frame 41, and each chuck may be independently movable along the first direction D1, the second direction D2, and the third direction D3.

[0057] The position of the mask 50 of the deposition mask apparatus 40 relative to the substrate 110 can be adjusted by moving at least one of the substrate holder 2 or the mask holder 3.

[0058] As shown in Figure 3, the deposition apparatus 10 may be equipped with a magnet 5 positioned on the second side S2 in the first direction D1 relative to the substrate holder 2. The magnet 5 can pull the mask 50 of the deposition mask apparatus 40 toward the substrate 110 by magnetic force. This eliminates the gap between the mask 50 and the substrate 110. As a result, the occurrence of shadows in the deposition process can be suppressed, and the dimensional accuracy and positional accuracy of the deposition layer 130 can be improved. In this application, shadow refers to the phenomenon in which the deposition material 7 enters the gap between the mask 50 and the substrate 110, causing the thickness of the deposition layer 130 to become uneven.

[0059] Next, the vapor deposition mask apparatus 40 will be described in detail. Figure 4 is a plan view showing the vapor deposition mask apparatus 40 as seen from the first surface 55a side of the mask 50.

[0060] As shown in Figure 4, the frame 41 of the deposition mask apparatus 40 may have a rectangular contour including a pair of first-side regions 411 extending in a second direction D2 and a pair of second-side regions 412 extending in a third direction D3. The second-side regions 412 to which the mask 50 is fixed may be longer than the first-side regions 411. The first opening 42 of the frame 41 may be surrounded by the pair of first-side regions 411 and the pair of second-side regions 412. The frame 41 may also be provided with alignment marks 45 for aligning the mask 50 with respect to the frame 41. These alignment marks 45 may be provided in positions on the frame 41 that do not overlap with the mask 50 when viewed along the first direction D1. In the illustrated example, one alignment mark 45 is provided at each of the four corners of the frame 41. This prevents the alignment marks 45 from being hidden by the mask 50 when positioning the mask 50, making it easier to align the mask 50.

[0061] Furthermore, as shown in Figure 4, the deposition mask apparatus 40 may include a plurality of masks 50. In this embodiment, the shape of each mask 50 may be a rectangle extending in the second direction D2. In the deposition mask apparatus 40, the plurality of masks 50 may be arranged in a direction intersecting the second direction D2, which is the longitudinal direction of the mask 50. That is, the plurality of masks 50 may be arranged in a third direction D3, which is the width direction of the mask 50 and is perpendicular to the longitudinal direction of the mask 50.

[0062] In Figure 4, the symbol L represents the dimension of the mask 50 in the second direction D2, i.e., the length of the mask 50. Dimension L may be, for example, 150 mm or more, 400 mm or more, or 800 mm or more. Dimension L may be, for example, 1000 mm or less, 1500 mm or less, or 2000 mm or less. The range of dimension L may be defined by a first group consisting of 150 mm, 400 mm, and 800 mm, and / or a second group consisting of 1000 mm, 1500 mm, and 2000 mm. The range of dimension L may be defined by a combination of any one value from the first group and any one value from the second group. The range of dimension L may be defined by a combination of any two values ​​from the first group. The range of dimension L may be defined by a combination of any two values ​​from the second group. For example, it may be 150mm or more and 2000mm or less, 150mm or more and 1500mm or less, 150mm or more and 1000mm or less, 150mm or more and 800mm or less, 150mm or more and 400mm or less, 400mm or more and 2000mm or less, 400mm or more and 1500mm or less, 400mm or more and 1000mm or less, 400mm or more and 800mm or less, 800mm or more and 2000mm or less, 800mm or more and 1500mm or less, 800mm or more and 1000mm or less, 1000mm or more and 2000mm or less, 1000mm or more and 1500mm or less, and 1500mm or more and 2000mm or less.

[0063] In Figure 4, the symbol W represents the dimension of the mask 50 in the third direction D3, i.e., the width of the mask 50. Dimension W may be, for example, 50 mm or more, 100 mm or more, or 200 mm or more. Dimension W may be, for example, 250 mm or less, 300 mm or less, or 400 mm or less. The range of dimension W may be defined by a first group consisting of 50 mm, 100 mm, and 200 mm, and / or a second group consisting of 250 mm, 300 mm, and 400 mm. The range of dimension W may be defined by a combination of any one value from the first group and any one value from the second group. The range of dimension W may be defined by a combination of any two values ​​from the first group. The range of dimension W may be defined by a combination of any two values ​​from the second group. For example, it may be 50mm or more and 400mm or less, 50mm or more and 300mm or less, 50mm or more and 250mm or less, 50mm or more and 200mm or less, 50mm or more and 100mm or less, 100mm or more and 400mm or less, 100mm or more and 300mm or less, 100mm or more and 250mm or less, 100mm or more and 200mm or less, 200mm or more and 400mm or less, 200mm or more and 300mm or less, 200mm or more and 250mm or less, 250mm or more and 400mm or less, 250mm or more and 300mm or less, and 300mm or more and 400mm or less.

[0064] As shown in Figure 4, the mask 50 may have a pair of ends 51 that overlap the frame 41 and an intermediate portion 52 located between the ends 51. Of these, the ends 51 are the parts that are fixed to the frame 41. The ends 51 may be fixed to the frame 41 by welding or the like.

[0065] The intermediate portion 52 may have at least one effective region (i.e., a first region) 53 and a peripheral region (i.e., a second region) 54 located around the effective region 53. In the example shown in Figure 4, the intermediate portion 52 includes a plurality of effective regions 53 arranged at predetermined intervals along the second direction D2. Also in the example shown in Figure 4, the peripheral region 54 surrounds the plurality of effective regions 53. The peripheral region 54 may be a region for supporting the effective regions 53 and may not be a region through which the deposition material intended to be deposited on the substrate 110 passes. On the other hand, the effective region 53 may be a region of the mask 50 that faces the display area of ​​the substrate 110.

[0066] The effective area 53 may have a rectangular outline in plan view. Although not shown in the figures, each effective area 53 may have various shapes of outlines depending on the shape of the display area of ​​the organic EL display device. For example, each effective area 53 may have a circular or elliptical outline, or a polygonal outline such as a hexagon or octagon. Furthermore, each effective area 53 may have a different shape of outline from the others, for example, each may have a circular, elliptical, or polygonal outline such as a hexagon or octagon.

[0067] Furthermore, the mask 50 may be provided with a reference area 58 that serves as a reference when aligning the mask 50 with respect to the frame 41. The reference area 58 may be located within the effective area 53 or within the surrounding area 54. Alternatively, the reference area 58 may be located within the effective area 53 and include through holes 56. For example, one reference area 58 may include one or more through holes 56.

[0068] Figure 5 is a plan view showing an example of an intermediate portion 52 of the mask 50. The effective area 53 of the intermediate portion 52 may include a plurality of through holes 56. The plurality of through holes 56 may be regularly arranged in the effective area 53 along the second direction D2 and the third direction D3 at a predetermined pitch. The vapor deposition material that has passed through each through hole 56 of the intermediate portion 52 and adhered to the substrate 110 may constitute the vapor deposition layer 130 on the substrate 110.

[0069] When using the mask 50 to fabricate organic devices such as organic EL displays, one effective region 53 may correspond to the display area of ​​one organic EL display. Therefore, the deposition mask apparatus 40 shown in Figure 4 enables multi-face deposition of organic EL displays. In addition, one effective region 53 may correspond to multiple display areas. Furthermore, although not shown in the figure, multiple effective regions 53 may be arranged in the width direction of the mask 50 at predetermined intervals.

[0070] Figure 6 is a cross-sectional view showing an example of the mask 50. As shown in Figure 6, the multiple through holes 56 penetrate from the first surface 55a to the second surface 55b of the mask 50. In the illustrated example, as will be described in detail later, a first recess 561 is formed by etching on the first surface 550a of the metal plate 55 which is the first side S1 in the first direction D1, and a second recess 562 is formed on the second surface 550b of the metal plate 55 which is the second side S2 in the first direction D1. The first recess 561 is connected to the second recess 562, so that the second recess 562 and the first recess 561 are connected to each other. The through hole 56 is composed of the second recess 562 and the first recess 561 connected to the second recess 562.

[0071] Two adjacent first recesses 561 may be spaced apart from each other. Similarly, two adjacent second recesses 562 may be spaced apart from each other. That is, the second surface 550b of the metal plate 55 may remain between two adjacent second recesses 562. In the following description, the portion of the effective area 53 of the second surface 550b of the metal plate 55 that remains unetched will also be referred to as the top portion 565. By manufacturing the mask 50 so that such a top portion 565 remains, the mask 50 can be given sufficient strength. This makes it possible to suppress damage to the mask 50, for example, during transport. However, if the width β of the top portion 565 is too large, shadows may occur in the deposition process, which may reduce the utilization efficiency of the deposition material 7. Therefore, it is preferable that the mask 50 be manufactured so that the width β of the top portion 565 is not excessively large.

[0072] When the deposition mask apparatus 40 is housed in the deposition apparatus 10 as shown in Figure 3, the first surface 55a of the mask 50 faces the substrate 110, and the second surface 55b of the mask 50 is located on the side of the crucible 6 holding the deposition material 7, as shown by the dashed line in Figure 6. Therefore, the deposition material 7 adheres to the substrate 110 by passing through the second recess 562, which has a gradually decreasing opening area.

[0073] As shown in Figure 6, the deposition material 7 moves not only along the first direction D1, which is the normal direction to the first surface 55a of the mask 50, from the crucible 6 toward the substrate 110, but also in a direction that is significantly inclined with respect to the first direction D1. In Figure 6, one example of the direction of movement of the deposition material 7 is shown by arrow A, which points from the second surface 55b toward the first surface 55a. In this case, if the thickness of the mask 50 is large, the deposition material 7 moving diagonally is more likely to get caught on the top portion 565, the wall surface 562a of the second recess 562, or the wall surface 561a of the first recess 561, resulting in a larger proportion of the deposition material 7 that cannot pass through the through-hole 56. Therefore, in order to improve the utilization efficiency of the deposition material 7, it is considered preferable to reduce the thickness t1 of the mask 50, thereby reducing the height of the wall surface 562a of the second recess 562 and the wall surface 561a of the first recess 561. In other words, it is preferable to use a metal plate 55 with the smallest possible thickness t1 for the metal plate 55 that constitutes the mask 50, while still ensuring the strength of the mask 50. For this reason, it is preferable that the thickness t1 of the mask 50 be 50 μm or less. By making the thickness t1 of the mask 50 50 μm or less, the proportion of the deposition material 7 that gets caught on the wall surface 562a of the through-hole 56 before passing through the through-hole 56 can be reduced. This makes it possible to increase the utilization efficiency of the deposition material 7.

[0074] On the other hand, if the thickness t1 of the mask 50 becomes too small, the strength of the mask 50 decreases, making it more susceptible to damage and deformation. For this reason, it is preferable that the thickness t1 of the mask 50 be 8 μm or more. By making the thickness t1 of the mask 50 8 μm or more, the strength of the mask 50 can be ensured, and damage and deformation of the mask 50 can be suppressed. Here, the thickness t1 is the thickness of the surrounding region 54, that is, the thickness of the part of the mask 50 in which the first recess 561 and the second recess 562 are not formed. Therefore, it can also be said that the thickness t1 is the thickness of the metal plate 55.

[0075] The thickness t1 of the metal plate 55 (i.e., the thickness of the mask 50) may be, for example, 8 μm or more, 10 μm or more, 13 μm or more, or 15 μm or more. Alternatively, the thickness t1 of the metal plate 55 may be, for example, 20 μm or less, 30 μm or less, 40 μm or less, or 50 μm or less. The range of the thickness t1 of the metal plate 55 may be defined by a first group consisting of 8 μm, 10 μm, 13 μm, and 15 μm, and / or a second group consisting of 20 μm, 30 μm, 40 μm, and 50 μm. The range of the thickness t1 of the metal plate 55 may also be defined by a combination of any one value from the first group and any one value from the second group. The range of the thickness t1 of the metal plate 55 may also be defined by a combination of any two values ​​from the first group. The range of the thickness t1 of the metal plate 55 may be determined by any two combinations of values ​​included in the second group described above.For example, it may be 8 μm or more and 50 μm or less, 8 μm or more and 40 μm or less, 8 μm or more and 30 μm or less, 8 μm or more and 20 μm or less, 8 μm or more and 15 μm or less, 8 μm or more and 13 μm or less, 8 μm or more and 10 μm or less, 10 μm or more and 50 μm or less, 10 μm or more and 40 μm or less, 10 μm or more and 30 μm or less, 10 μm or more and 20 μm or less, 10 μm or more and 15 μm or less, 10 μm or more and 13 μm or less, 13 μm or more and 50 μm or less, 1 It may be 3 μm or more and 40 μm or less, 13 μm or more and 30 μm or less, 13 μm or more and 20 μm or less, 13 μm or more and 15 μm or less, 15 μm or more and 50 μm or less, 15 μm or more and 40 μm or less, 15 μm or more and 30 μm or less, 15 μm or more and 20 μm or less, 20 μm or more and 50 μm or less, 20 μm or more and 40 μm or less, 20 μm or more and 30 μm or less, 30 μm or more and 50 μm or less, 30 μm or more and 40 μm or less, or 40 μm or more and 50 μm or less.

[0076] A contact-type measurement method will be used to measure the thickness t1 of the metal plate 55. For this contact-type measurement, the HEIDENHAIM-METRO "MT1271" length gauge manufactured by Heidenhaim, which is equipped with a ball bush guide plunger, will be used.

[0077] Furthermore, in Figure 6, the minimum angle that a straight line M passing through the connection portion 563, which is the part of the through hole 56 that has the smallest opening area, and any other arbitrary position on the wall surface 562a of the second recess 562, makes with respect to the first direction D1, which is the normal direction of the first surface 55a of the mask 50, is represented by the symbol θ1. In order to allow the diagonally moving deposition material 7 to reach the substrate 110 as much as possible without reaching the wall surface 562a, it is advantageous to increase the angle θ1. In addition to reducing the thickness t1 of the mask 50, it is also effective to reduce the width β of the top portion 565 as described above in order to increase the angle θ1.

[0078] In Figure 6, the symbol α represents the width of the portion of the first surface 550a of the metal plate 55 that remains unetched in the effective region 53 (hereinafter also referred to as the rib portion). The width α of the rib portion and the dimension r of the through portion 564 are appropriately determined according to the dimensions of the organic device and the number of display pixels. The width α of the rib portion may be, for example, 5 μm or more, 10 μm or more, or 20 μm or more. The width α of the rib portion may be, for example, 25 μm or less, 30 μm or less, or 40 μm or less. The range of the width α of the rib portion may be determined by a first group consisting of 5 μm, 10 μm, and 20 μm, and / or a second group consisting of 25 μm, 30 μm, and 40 μm. The range of the width α of the rib portion may be determined by a combination of any one value included in the first group and any one value included in the second group. The range of the rib width α may be determined by any two combinations of values ​​included in the first group described above. The range of the rib width α may be determined by any two combinations of values ​​included in the second group described above. For example, it may be 5 μm or more and 40 μm or less, 5 μm or more and 30 μm or less, 5 μm or more and 25 μm or less, 5 μm or more and 20 μm or less, 5 μm or more and 10 μm or less, 10 μm or more and 40 μm or less, 10 μm or more and 30 μm or less, 10 μm or more and 25 μm or less, 10 μm or more and 20 μm or less, 20 μm or more and 40 μm or less, 20 μm or more and 30 μm or less, 20 μm or more and 25 μm or less, 25 μm or more and 40 μm or less, 25 μm or more and 30 μm or less, and 30 μm or more and 40 μm or less.

[0079] The dimension r of the through portion 564 may be, for example, 10 μm or more, 15 μm or more, or 25 μm or more. The dimension r may be, for example, 40 μm or less, 50 μm or less, or 55 μm or less. The range of dimension r may be defined by a first group consisting of 10 μm, 15 μm and 25 μm, and / or a second group consisting of 40 μm, 50 μm and 55 μm. The range of dimension r may be defined by a combination of any one value included in the first group and any one value included in the second group. The range of dimension r may be defined by a combination of any two values ​​included in the first group. The range of dimension r may be defined by a combination of any two values ​​included in the second group. For example, it may be 10 μm or more and 55 μm or less, 10 μm or more and 50 μm or less, 10 μm or more and 40 μm or less, 10 μm or more and 25 μm or less, 10 μm or more and 15 μm or less, 15 μm or more and 55 μm or less, 15 μm or more and 50 μm or less, 15 μm or more and 40 μm or less, 15 μm or more and 25 μm or less, 25 μm or more and 55 μm or less, 25 μm or more and 50 μm or less, 25 μm or more and 40 μm or less, 40 μm or more and 55 μm or less, 40 μm or more and 50 μm or less, and 50 μm or more and 55 μm or less. The measuring instrument used to measure the dimension r of the through-hole 564 is the AMIC-1710 manufactured by Shinto S Precision.

[0080] In Figure 6, an example is shown in which the second surface 550b of the metal plate 55 remains between two adjacent second recesses 562, but this is not the only example. Although not shown, etching may be performed so that two adjacent second recesses 562 are connected. In other words, there may be areas between two adjacent second recesses 562 where the second surface 550b of the metal plate 55 does not remain.

[0081] Next, the materials for the mask 50 and frame 41 of the vapor deposition mask apparatus 40 will be described. As the main material for the mask 50 and frame 41, an iron alloy containing nickel can be used. The iron alloy may also contain cobalt in addition to nickel. For example, as the material for the metal plate 55 of the mask 50, an iron alloy can be used in which the total content of nickel and cobalt is 28% by mass or more and 54% by mass or less, and the cobalt content is 0% by mass or more and 6% by mass or less. This makes it possible to reduce the difference between the thermal expansion coefficients of the mask 50 and frame 41 and the thermal expansion coefficient of the glass substrate 110. As a result, it is possible to suppress the decrease in dimensional accuracy and positional accuracy of the vapor deposition layer 130 formed on the substrate 110 due to thermal expansion of the mask 50, frame 41, substrate 110, etc.

[0082] The nickel and cobalt content in the metal plate 55 may be 28% by mass or more and 38% by mass or less in total. In this case, specific examples of iron alloys containing nickel or nickel and cobalt include Invar, Super Invar, and Ultra Invar. Invar is an iron alloy containing 34% by mass or more and 38% by mass or less nickel, with the remainder being iron and unavoidable impurities. Super Invar is an iron alloy containing 30% by mass or more and 34% by mass or less nickel, cobalt, the remainder being iron and unavoidable impurities. Ultra Invar is an iron alloy containing 28% by mass or more and 34% by mass or less nickel, 2% by mass or more and 7% by mass or less cobalt, 0.1% by mass or more and 1.0% by mass or less manganese, 0.10% by mass or less silicon, 0.01% by mass or less carbon, the remainder being iron and unavoidable impurities.

[0083] The nickel and cobalt content in the metal plate 55 may be 38% by mass or more and 54% by mass or less in total. In this case, specific examples of iron alloys containing nickel or nickel and cobalt include low thermal expansion Fe-Ni plated alloys. Low thermal expansion Fe-Ni plated alloys are iron alloys containing 38% by mass or more and 54% by mass or less of nickel, with the remainder being iron and unavoidable impurities.

[0084] Furthermore, if the temperatures of the mask 50, frame 41, and substrate 110 do not reach high temperatures during the vapor deposition process, it is not particularly necessary to make the thermal expansion coefficients of the mask 50 and frame 41 the same as those of the substrate 110. In this case, materials other than the iron alloys mentioned above may be used as the material constituting the mask 50. For example, iron alloys other than the nickel-containing iron alloys mentioned above, such as chromium-containing iron alloys, may be used. As an example of a chromium-containing iron alloy, an iron alloy commonly referred to as stainless steel can be used. In addition, alloys other than iron alloys, such as nickel or nickel-cobalt alloys, may be used.

[0085] Incidentally, as shown in Figures 7 and 8, the mask 50 may bend to one side (i.e., the first side S1) along the first direction D1 in the region that overlaps with the first opening 42 of the frame 41 when viewed along the first direction D1. Here, Figure 7 is a cross-sectional view showing an example of the deposition mask apparatus 40 of Figure 4 cut along the second direction D2. Figure 8 is an enlarged view showing part VIII of Figure 7.

[0086] The maximum value da1 of the deflection amount da of the mask 50 along the first direction D1 (see Figure 7) may be between 1.1 mm and 15.3 mm. By having a maximum value da1 of 1.1 mm or more, when the mask 50 is pulled toward the substrate 110 side (i.e., the second side S2 in the first direction D1) by the magnetic force of the magnet 5, the area of ​​the mask 50 that contacts the first surface 111 of the substrate 110 can be increased. In this case, the entire effective area 53 of the mask 50 can contact the substrate 110. As a result, the difference between the actual position and the design position of the through-hole 56 in the mask 50 when it is assembled with the substrate 110 can be reduced. This makes it possible to increase the positional accuracy of the vapor-deposited layer 130, which is composed of vapor-deposited material deposited on the substrate 110 through the through-hole 56. Furthermore, by keeping the maximum value of the deflection amount da1 at 15.3 mm or less, it is possible to suppress the formation of wrinkles in the mask 50 when the mask 50 is brought into contact with the first surface 111 of the substrate 110 by the magnetic force of the magnet 5.

[0087] Furthermore, the maximum value da1 of the deflection amount da may be, for example, 1.1 mm or more, 1.7 mm or more, 3.0 mm or more, or 3.7 mm or more. The maximum value da1 of the deflection amount da may be, for example, 10.2 mm or less, 11.3 mm or less, 13.8 mm or less, or 15.3 mm or less. The range of the maximum value da1 of the deflection amount da may be determined by a first group consisting of 1.1 mm, 1.7 mm, 3.0 mm and 3.7 mm, and / or a second group consisting of 10.2 mm, 11.3 mm, 13.8 mm and 15.3 mm. The range of the maximum value da1 of the deflection amount da may be determined by a combination of any one value included in the first group and any one value included in the second group. The range of the maximum value da1 of the deflection amount da may be determined by a combination of any two values ​​included in the first group. The range of the maximum value da1 of the deflection amount da may be determined by any two combinations of values ​​included in the second group described above.For example, it may be 1.1mm or more and 15.3mm or less, 1.1mm or more and 13.8mm or less, 1.1mm or more and 11.3mm or less, 1.1mm or more and 10.2mm or less, 1.1mm or more and 3.7mm or less, 1.1mm or more and 3.0mm or less, 1.1mm or more and 1.7mm or less, 1.7mm or more and 15.3mm or less, 1.7mm or more and 13.8mm or less, 1.7mm or more and 11.3mm or less, 1.7mm or more and 10.2mm or less, 1.7mm or more and 3.7mm or less, 1.7mm or more and 3.0mm or less, 3.0mm or more and 15.3mm or less, 3.0 It may be between 13.8 mm and 3.0 mm and 11.3 mm, between 10.2 mm and 3.0 mm and 3.7 mm, between 15.3 mm and 3.7 mm, between 11.3 mm and 3.7 mm, between 11.3 mm and 3.7 mm, between 10.2 mm and 15.3 mm, between 13.8 mm and 3.7 mm, between 10.2 mm and 15.3 mm, between 13.8 mm and 10.2 mm, between 15.3 mm and 10.2 mm, between 15.3 mm and 10.2 mm, between 15.3 mm and 10.2 mm, between 15.3 mm and 10.2 mm, between 15.3 mm and 10.2 mm, between 15.3 mm and 10.2 mm, between 15.3 mm and 10.2 mm, between 15.3 mm and 10.2 mm, between 15.3 mm and 10.3.

[0088] Furthermore, as shown in Figure 8, the effective region (i.e., the first region) 53 may be located in a region where the amount of deflection da along the first direction D1 of the mask 50 is 0.3 mm or more and 4.2 mm or less. By having an amount of deflection da of 0.3 mm or more in the region where the effective region 53 is located, when the mask 50 is pulled towards the substrate 110 by the magnetic force of the magnet 5, the entire effective region 53 of the mask 50 can be brought into contact with the substrate 110. This reduces the difference between the actual position and the design position of the through-holes 56 in the mask 50 when it is assembled with the substrate 110. As a result, the positional accuracy of the vapor-deposited layer 130, which is composed of vapor-deposited material deposited on the substrate 110 through the through-holes 56, can be increased. In addition, by having an amount of deflection da of 4.2 mm or less in the region where the effective region 53 is located, it is possible to suppress the formation of wrinkles in the mask 50 when the mask 50 is brought into contact with the first surface 111 of the substrate 110 by the magnetic force of the magnet 5. In particular, since it is possible to suppress the occurrence of wrinkles in the effective area 53 of the mask 50, the positional accuracy of the deposition layer 130, which is composed of deposition material deposited on the substrate 110 through the through holes 56, can be improved.

[0089] The amount of deflection da in the region where the effective region 53 is located may be, for example, 0.3 mm or more, 0.4 mm or more, 0.7 mm or more, or 1.0 mm or more. The amount of deflection da in the region where the effective region 53 is located may be, for example, 2.8 mm or less, 3.2 mm or less, 3.8 mm or less, or 4.2 mm or less. The range of the amount of deflection da in the region where the effective region 53 is located may be determined by a first group consisting of 0.3 mm, 0.4 mm, 0.7 mm and 1.0 mm, and / or a second group consisting of 2.8 mm, 3.2 mm, 3.8 mm and 4.2 mm. The range of the amount of deflection da in the region where the effective region 53 is located may be determined by a combination of any one value included in the first group and any one value included in the second group. The range of the amount of deflection da in the region where the effective region 53 is located may be determined by a combination of any two values ​​included in the first group. The range of the deflection amount da in the region where the effective region 53 is located may be determined by any two combinations of values ​​included in the second group described above.For example, it may be 0.3mm or more and 4.2mm or less, 0.3mm or more and 3.8mm or less, 0.3mm or more and 3.2mm or less, 0.3mm or more and 2.8mm or less, 0.3mm or more and 1.0mm or less, 0.3mm or more and 0.7mm or less, 0.3mm or more and 0.4mm or less, 0.4mm or more and 4.2mm or less, 0.4mm or more and 3.8mm or less, 0.4mm or more and 3.2mm or less, 0.4mm or more and 2.8mm or less, 0.4mm or more and 1.0mm or less, 0.4mm or more and 0.7mm or less, or 0.7mm or more and 4.2mm or less. It may be 0.7mm or more and 3.8mm or less, 0.7mm or more and 3.2mm or less, 0.7mm or more and 2.8mm or less, 0.7mm or more and 1.0mm or less, 1.0mm or more and 4.2mm or less, 1.0mm or more and 3.8mm or less, 1.0mm or more and 3.2mm or less, 1.0mm or more and 2.8mm or less, 2.8mm or more and 4.2mm or less, 2.8mm or more and 3.8mm or less, 2.8mm or more and 3.2mm or less, 3.2mm or more and 4.2mm or less, 3.2mm or more and 3.8mm or less, 3.8mm or more and 4.2mm or less.

[0090] Next, a manufacturing apparatus for producing the above-mentioned vapor deposition mask apparatus 40 will be described with reference to Figures 9 and 10. Figure 9 is a plan view showing an example of a manufacturing apparatus (i.e., a vapor deposition mask manufacturing apparatus) 70 for producing the vapor deposition mask apparatus 40. Figure 10 is a cross-sectional view showing an example of the manufacturing apparatus 70 in Figure 9 cut along the second direction D2.

[0091] The manufacturing apparatus 70 shown in Figures 9 and 10 is a device for fixing the mask 50 to a predetermined position on the frame 41 while tension is applied to the mask 50 in a first direction D1 and a second direction D2. The manufacturing apparatus 70 may align the mask 50 with respect to the frame 41 by adjusting the position of the reference area 58 within the mask 50 relative to the frame 41. The position of the frame 41 may be determined by alignment marks 45 on the frame 41.

[0092] As shown in Figures 9 and 10, the manufacturing apparatus 70 may include a clamp 71, a frame stage 72, a mask stage 60, and a fixing mechanism 73. The manufacturing apparatus 70 may also further include an adjustment mechanism 74 for adjusting the position of the mask 50.

[0093] The clamp 71 is a device that applies tension to the mask 50 in at least the second direction D2. The clamp 71 may be configured to apply tension to the mask 50 in the first direction D1, which is the thickness direction of the mask 50, the second direction D2, which is the longitudinal direction, and the third direction D3, which is the width direction.

[0094] As shown in Figure 9, the first clamp 71 may grip one end 51 of the mask 50, and the second clamp 71 may grip the other end 51 of the mask 50. By changing the distance between the first clamp 71 and the second clamp 71, the tension T applied to the mask 50 in the second direction D2 can be adjusted. Furthermore, by changing the position of at least one of the first clamp 71 and the second clamp 71 in the first direction D1, the tension T applied to the mask 50 in the first direction D1 can be adjusted. In addition, the clamp 71 may be movable along the third direction D3, which is the width direction of the mask 50. In this way, because the clamp 71 is movable, the position of the mask 50 relative to the frame 41 can be adjusted by moving the clamp 71.

[0095] The number of clamps 71 fixed to one end 51 may be one or two or more. For example, as shown in Figure 9, the manufacturing apparatus 70 may include two first clamps 71 fixed to one end 51. The manufacturing apparatus 70 may also include two second clamps 71 fixed to the other end 51. The tension T that each clamp 71 applies to the mask 50 may be the same or different.

[0096] The frame stage 72 is a device for supporting the frame 41. As shown in Figures 9 and 10, the frame stage 72 may be formed in the shape of a substantially rectangular frame in plan view. The frame stage 72 may also be provided with a second opening 72a that overlaps with the first opening 42 of the frame 41 in plan view. In the illustrated example, in plan view, the contour defining the second opening 72a coincides with the contour defining the first opening 42. Although not shown, in plan view, the contour defining the second opening 72a may be larger or smaller than the contour defining the first opening 42. Also, although not shown, in plan view, the contour defining the second opening 72a and the contour defining the first opening 42 may overlap each other.

[0097] Furthermore, the frame stage 72 may have larger dimensions than the frame 41 in a plan view, and the contour defining the frame stage 72 may surround the contour defining the frame 41 in a plan view. The frame stage 72 may support the frame 41 such that each side of the frame stage 72 corresponds to each side of the frame 41 (i.e., a pair of first side regions 411 and a pair of second side regions 412).

[0098] The frame stage 72 may be movable along the first direction D1. This allows for easy adjustment of the position of the first frame surface 41a of the frame 41 in the first direction D1. The frame stage 72 may also be movable along the second direction D2 and the third direction D3.

[0099] The mask stage 60 is a device for supporting the mask 50. The mask stage 60 may have a first mask stage surface (i.e., a mask stage surface) 61 that, when viewed along a first direction D1, is positioned to overlap with the first opening 42 of the frame 41 supported by the frame stage 72. In the illustrated example, the first mask stage surface 61 of the mask stage 60 is positioned to overlap the first opening 42 of the frame 41 and the second opening 72a of the frame stage 72 when viewed along the first direction D1.

[0100] As shown in Figure 10, the first mask stage surface 61 may be located on the second side S2 relative to the first frame surface 41a. When fixing the mask 50 to the frame 41, this first mask stage surface 61 contacts the second surface 55b of the mask 50, thereby deforming the mask 50 so that it becomes convex toward the second side S2 in the first direction D1. This allows the mask 50 to be fixed to the frame 41 in a state where it is deformed so that it becomes convex toward the second side S2 in the first direction D1, similar to the state in which the mask 50 contacts the substrate 110 during the deposition process. In other words, the shape of the mask 50 when fixed to the frame 41 can be made closer to the shape of the mask 50 during the deposition process. Therefore, the difference between the actual position and the design position of the through-hole 56 in the mask 50 when it is combined with the substrate 110 can be reduced. Such a first mask stage surface 61 may also be a flat surface. In this case, in the cross-section along the first direction D1 and the second direction D2, the contour of the first mask stage surface 61 may extend along the second direction D2. Also, in the cross-section along the first direction D1 and the second direction D2, the contour of the first mask stage surface 61 may be parallel to the contour of the first surface 55a in the effective area 53 of the mask 50 and the contour of the first frame surface 41a of the frame 41.

[0101] The distance d1 along the first direction D1 between the first mask stage surface 61 and the first frame surface 41a of the frame 41 may be 0.5 mm or more and 2.0 mm or less. By having a distance d1 of 0.5 mm or more along the first direction D1 between the first mask stage surface 61 and the first frame surface 41a, when the mask 50 is pulled toward the substrate 110 side (i.e., the second side S2 in the first direction D1) by the magnetic force of the magnet 5, a desired area of ​​the mask 50 can be brought into contact with the first surface 111 of the substrate 110. This reduces the difference between the actual position and the design position of the through-holes 56 in the mask 50 when it is assembled with the substrate 110. This improves the positional accuracy of the vapor-deposited layer 130, which is composed of vapor-deposited material deposited on the substrate 110 through the through-holes 56. Furthermore, by keeping the distance d1 along the first direction D1 between the first mask stage surface 61 and the first frame surface 41a at 2.0 mm or less, it is possible to suppress the area of ​​the mask 50 that is pulled towards the substrate 110 by the magnetic force of the magnet 5 from becoming too large. Therefore, when the mask 50 is brought into contact with the first surface 111 of the substrate 110 by the magnetic force of the magnet 5, it is possible to suppress the formation of wrinkles in the mask 50.

[0102] The distance d1 may be, for example, 0.5 mm or more, 0.8 mm or more, 1.0 mm or more, or 1.5 mm or more. The distance d1 may be, for example, 1.0 mm or less, 1.5 mm or less, 1.8 mm or less, or 2.0 mm or less. The range of the distance d1 may be defined by a first group consisting of 0.5 mm, 0.8 mm, 1.0 mm, and 1.5 mm, and / or a second group consisting of 1.0 mm, 1.5 mm, 1.8 mm, and 2.0 mm. The range of the distance d1 may be defined by a combination of any one value from the first group and any one value from the second group. The range of the distance d1 may be defined by a combination of any two values ​​from the first group. The range of the distance d1 may be defined by a combination of any two values ​​from the second group. For example, it may be 0.5 mm or more and 2.0 mm or less, 0.5 mm or more and 1.8 mm or less, 0.5 mm or more and 1.5 mm or less, 0.5 mm or more and 1.0 mm or less, 0.5 mm or more and 0.8 mm or less, 0.8 mm or more and 2.0 mm or less, 0.8 mm or more and 1.8 mm or less, 0.8 mm or more and 1.5 mm or less, 0.8 mm or more and 1.0 mm or less, 1.0 mm or more and 2.0 mm or less, 1.0 mm or more and 1.8 mm or less, 1.0 mm or more and 1.5 mm or less, 1.5 mm or more and 2.0 mm or less, 1.5 mm or more and 1.8 mm or less, and 1.8 mm or more and 2.0 mm or less.

[0103] As shown in Figure 9, the first mask stage surface 61 may overlap the entire effective area 53 when viewed along the first direction D1. In this case, as shown in Figure 10, the effective area 53 of the intermediate portion 52 of the mask 50 may be located on the second side S2 in the first direction D1 than the end portion 51 of the mask 50. That is, the entire first surface 55a in the effective area 53 of the intermediate portion 52 may be located on the second side S2 in the first direction D1 than the first surface 55a at the end portion 51. Even in this case, when the mask 50 is pulled towards the substrate 110 by the magnetic force of the magnet 5, the entire effective area 53 of the mask 50 may come into contact with the substrate 110. This reduces the difference between the actual position and the design position of the through-holes 56 in the mask 50 when it is assembled with the substrate 110.

[0104] A mask stage 60 having such a first mask stage surface 61 may be movable along a first direction D1. This allows for easy adjustment of the position of the first mask stage surface 61 of the mask stage 60 in the first direction D1. The mask stage 60 may also be movable along a second direction D2 and a third direction D3.

[0105] As mentioned above, the mask stage 60 and the frame stage 72 may each be movable along the first direction D1. Therefore, when the mask stage 60 and / or the frame stage 72 move along the first direction D1, the first mask stage surface 61 may be located on the first side S1 relative to the first frame surface 41a.

[0106] The fixing mechanism 73 is a mechanism for fixing the end 51 of the mask 50 to the frame 41. This fixing mechanism 73 may be attached to a rail 75 extending in the second direction D2. For example, the fixing mechanism 73 may be movable along the rail 75. Alternatively, the fixing mechanism 73 may be attached to a member other than the rail.

[0107] The fixing mechanism 73 may include a laser device that irradiates laser light from the first surface 55a side of the mask 50 toward the end 51. By irradiating the end 51 with laser light and melting a portion of the end 51, the end 51 can be welded to the frame 41. In Figure 9, reference numeral 59 denotes the welded region of the end 51 that is welded to the frame 41.

[0108] As the laser light, for example, YAG laser light generated by a YAG laser device can be used. As a YAG laser device, for example, one equipped with a crystal of YAG (yttrium aluminum garnet) doped with Nd (neodymium) can be used as the oscillation medium.

[0109] The adjustment mechanism 74 may include a camera 76, a calculation mechanism 77, and a control mechanism 78.

[0110] Camera 76 is used to detect the reference area 58 of the mask 50. For example, a camera 76 with the following specifications can be used. • Resolution: 2448×2048 Pixel size: 3.45μm

[0111] The camera 76 may be movable along the rail 75. The rail 75 may also be movable along the third direction D3. In the example shown in Figure 9, the camera 76 is positioned on the first side S1 in the first direction D1 relative to the mask 50, and the camera 76 is configured to detect the reference region 58 of the mask 50 from the first side S1. Although not shown in the figure, the camera 76 may also be positioned on the second side S2 in the first direction D1 relative to the mask 50, and the camera 76 may be configured to detect the reference region 58 of the mask 50 from the second side S2.

[0112] The calculation mechanism 77 is a mechanism that calculates the settings of the clamp 71 to reduce the deviation when the actual position of the reference area 58 of the mask 50 deviates from the design position. For example, the calculation mechanism 77 may calculate the position in the second direction D2 or the third direction D3 to reduce the difference between the position of the reference area 58 detected by the camera 76 and the design position of the reference area 58. Alternatively, the calculation mechanism 77 may calculate the tension T applied to the mask 50 by the clamp 71 in the second direction D2 to reduce the difference between the position of the reference area 58 detected by the camera 76 and the design position of the reference area 58.

[0113] Information regarding the design position of the reference area 58 may be stored in advance in a recording device such as the hard disk drive or memory of the computer 79. The design position of the reference area 58 may be determined based on a coordinate system represented with respect to the alignment marks 45 of the frame 41.

[0114] The calculation mechanism 77 may be implemented by a computer 79. For example, the computer 79 may function as the calculation mechanism 77 by installing a program on the computer 79 that causes it to function as the calculation mechanism 77.

[0115] The control mechanism 78 is a mechanism that controls the clamp 71 based on the calculation result of the calculation mechanism 77. For example, the control mechanism 78 may send a command to the drive mechanism that drives the clamp 71 to move the clamp 71 to the position calculated by the calculation mechanism 77. Alternatively, the control mechanism 78 may send a command to the drive mechanism that drives the clamp 71 to achieve the tension T calculated by the calculation mechanism 77.

[0116] The control mechanism 78, like the calculation mechanism 77, may be implemented by a computer 79. For example, the computer 79 may function as the control mechanism 78 by installing a program on the computer 79 that causes it to function as the control mechanism 78.

[0117] The program may be pre-installed on the computer 79 at the time of shipment. Alternatively, the program may be installed on the computer 79 after shipment by using a non-transient recording medium that the computer 79 can read and on which the program is stored. The type of recording medium is not particularly limited and various types are possible, such as portable recording media like magnetic disks and optical disks, and fixed recording media like hard disk drives and memory. The program may also be distributed via a communication line such as the Internet. When the program is distributed via a communication line, the server for distribution will have a recording medium containing the program according to this embodiment, at least temporarily.

[0118] Next, a method for manufacturing the vapor deposition mask apparatus 40 will be described with reference to Figures 11 to 21.

[0119] First, the masks 50 are prepared. In this embodiment, multiple through holes 56 corresponding to multiple masks 50 are formed in the metal plate 55. In other words, multiple masks 50 are arranged on the metal plate 55. Then, the portion of the metal plate 55 in which the multiple through holes 56 corresponding to one mask 50 have been formed is separated from the metal plate 55. In this way, a single-sheet mask 50 can be obtained.

[0120] In this process, first, a resist film containing a photosensitive resist material is formed on the first surface 550a and the second surface 550b of the metal plate 55. Subsequently, the resist film is exposed to light and developed. As a result, as shown in Figure 11, a first resist pattern 551a is formed on the first surface 550a of the metal plate 55, and a second resist pattern 551b is formed on the second surface 550b of the metal plate 55.

[0121] Next, as shown in Figure 12, a first surface etching step is performed in which the area of ​​the first surface 550a of the metal plate 55 that is not covered by the first resist pattern 551a is etched using a first etching solution. This forms a number of first recesses 561 on the first surface 550a of the metal plate 55. As the first etching solution, for example, one containing ferric chloride solution and hydrochloric acid may be used.

[0122] Next, as shown in Figure 13, a second surface etching process is performed to etch the area of ​​the second surface 550b of the metal plate 55 that is not covered by the second resist pattern 551b, thereby forming a second recess 562 on the second surface 550b. The second surface etching process is carried out until the first recess 561 and the second recess 562 are connected to each other, thereby forming a through hole 56. As the second etching solution, a solution containing, for example, ferric chloride solution and hydrochloric acid is used, similar to the first etching solution described above. During the second surface etching process, the first recess 561 may be covered with a resin 552 that is resistant to the second etching solution, as shown in Figure 13.

[0123] Subsequently, as shown in Figure 14, the resin 552 is removed from the metal plate 55. The resin 552 can be removed, for example, by using an alkaline stripping solution. When an alkaline stripping solution is used, the resist patterns 551a and 551b are removed simultaneously with the resin 552, as shown in Figure 14. After removing the resin 552, the resist patterns 551a and 551b may be removed separately from the resin 552 using a different stripping solution than the one used to remove the resin 552.

[0124] Subsequently, the mask 50 can be obtained by separating the portion of the metal plate 55 in which multiple through holes 56 corresponding to one mask 50 are formed from the metal plate 55.

[0125] In parallel with preparing the mask 50, the frame 41 is prepared. First, a metal plate (not shown) is prepared. Next, the frame 41 having the first opening 42 is obtained by machining this metal plate, such as by cutting. The frame 41 may also be manufactured using a mold or a 3D printer.

[0126] Next, a positioning step is performed to place the frame 41. The positioning step is to place the frame 41 so that, when viewed along the first direction D1, the first opening 42 of the frame 41 overlaps with the first mask stage surface 61 of the mask stage 60.

[0127] In the placement process, first, the manufacturing apparatus 70 is prepared. Next, as shown in Figure 15, the frame 41 is placed on the frame stage 72 of the manufacturing apparatus 70. At this time, the mask stage 60 may be pre-positioned in the first direction D1 such that the first mask stage surface 61 is located second side S2 relative to the first frame surface 41a. In this case, the mask stage 60 may be positioned in the first direction D1 such that the distance d1 (see Figure 10) along the first direction D1 between the first mask stage surface 61 and the first frame surface 41a is 0.5 mm or more and 2.0 mm or less. Although not shown, the positioning of the mask stage 60 in the first direction D1 may be performed after the frame 41 has been placed on the frame stage 72. In this case, for example, the first mask stage surface 61 may be positioned second side S2 relative to the first frame surface 41a by moving the mask stage 60 and / or the frame stage 72 in the first direction D1.

[0128] Next, a tensioning step is performed to apply tension to the mask 50 in the second direction D2. In the tensioning step, for example, the mask 50 may first be grasped by a clamp 71 (see Figure 9), and the clamp 71 may apply tension to the mask 50 in the second direction D2.

[0129] Next, as shown in Figure 16, with tension applied to the mask 50 in the second direction D2, the clamp 71 may be moved to the first side S1 in the first direction D1. Here, as described above, the first mask stage surface 61 of the mask stage 60 may be located on the second side S2 relative to the first frame surface 41a of the frame 41. Therefore, as shown in Figure 17, by moving the clamp 71 to the first side S1 in the first direction D1, the mask 50 can come into contact with the first mask stage surface 61.

[0130] Then, as shown in Figure 18, by further moving the clamp 71 toward the first side S1 in the first direction D1, the mask 50 can come into contact with the first frame surface 41a of the frame 41. In this way, during the tensioning process, the mask 50 can come into contact with the first mask stage surface 61 and the first frame surface 41a. This makes it possible to bring the shape of the mask 50 when fixed to the frame 41 closer to the shape of the mask 50 in the deposition process described later. That is, in the fixing process described later, the mask 50 can be fixed to the frame 41 in a state in which the mask 50 is deformed to be convex toward the second side S2 in the first direction D1, similar to the state in which the mask 50 contacts the substrate 110 in the deposition process. Therefore, the difference between the actual position and the design position of the through hole 56 in the mask 50 when it is combined with the substrate 110 can be reduced. Although not shown in the diagram, the mask stage 60 may be positioned in the first direction D1 after the mask 50 has been brought into contact with the first frame surface 41a, without positioning the mask stage 60 in the first direction D1 during the arrangement process described above. In this case, for example, the mask stage 60 may be moved to the second side of the first direction D1 so that the first mask stage surface 61 is positioned on the second side S2 relative to the first frame surface 41a.

[0131] Furthermore, as shown in Figure 19, for example, with tension applied to the mask 50 in the second direction D2, the clamp 71 may be moved from the first frame surface 41a of the frame 41 to the first side S1 in the first direction D1. This causes the end 51 of the mask 50 to be in close contact with the frame 41. This increases the welding strength between the mask 50 and the frame 41. In this case, for example, the end 51 of the mask 50 may be pressed against the first frame surface 41a of the frame 41 using a jig (not shown). This allows the end 51 of the mask 50 to be in closer contact with the frame 41.

[0132] Next, the mask 50 is fixed to the first frame surface 41a of the frame 41.

[0133] Here, before fixing the mask 50 to the frame 41, an adjustment step may be performed to adjust the position of the mask 50. The adjustment step may include a detection step, a calculation step, and a control step. In this case, for example, the detection step is performed first. The detection step is a step of detecting the position of the reference area 58 (see Figure 9) of the mask 50 when tension is applied in the first direction D1 and the second direction D2 using the camera 76.

[0134] Next, a calculation process is performed. The calculation process is a process of calculating the settings of the clamp 71 to reduce the deviation when the actual position of the reference area 58 of the mask 50 deviates from the design position, using the calculation mechanism 77 described above. The calculation process may also calculate the settings of the clamp 71 using the reference area 58 detected by the detection process. For example, the positions of the clamp 71 in the first direction D1, second direction D2, and / or third direction D3 may be calculated to reduce the difference in the second direction D2 and / or third direction D3 between the position of the detected reference area 58 and the design position of the reference area 58. In addition, the tension T applied to the mask 50 in the first direction D1 and / or second direction D2 by the clamp 71 may be calculated to reduce the difference in the second direction D2 and / or third direction D3 between the position of the detected reference area 58 and the design position of the reference area 58.

[0135] Next, a control process is performed. The control process involves controlling the clamp 71 using the control mechanism 78 based on the results of the calculation process.

[0136] By performing the detection, calculation, and control steps described above, the mask 50 can be aligned with the frame 41. The detection, calculation, and control steps described above may be repeated two or more times.

[0137] The steps for adjusting the position of the mask 50 in the second direction D2 and adjusting the position of the mask 50 in the third direction D3 may be performed simultaneously or separately. "Simultaneously" means that both the position of the mask 50 in the second direction D2 and the position of the mask 50 in the third direction D3 are considered in a single adjustment. "Separately" means that either the position of the mask 50 in the second direction D2 or the position of the mask 50 in the third direction D3 is considered in a single adjustment. If the steps for adjusting the position of the mask 50 in the second direction D2 and the position of the mask 50 in the third direction D3 are performed separately, the order of the two is arbitrary. For example, the step for adjusting the position of the mask 50 in the second direction D2 may be performed first, followed by the step for adjusting the position of the mask 50 in the third direction D3. Alternatively, the step for adjusting the position of the mask 50 in the third direction D3 may be performed first, followed by the step for adjusting the position of the mask 50 in the second direction D2.

[0138] After the adjustment process, a fixing process is performed in which the end portion 51 of the mask 50 is fixed to the first frame surface 41a of the frame 41 using the fixing mechanism 73, while tension is applied to the mask 50. This allows the vapor deposition mask apparatus 40 to be obtained.

[0139] Here, when fixing the mask 50 to the first frame surface 41a, it is preferable that the mask 50 is fixed to the first frame surface 41a such that, when viewed along the first direction D1, the first mask stage surface 61 overlaps the entire effective area 53. This allows the entire effective area 53 to be in contact with the substrate 110 during the deposition process, as will be described later.

[0140] Then, as shown in Figure 20, after fixing the end 51 of the mask 50 to the first frame surface 41a of the frame 41, the portion of the end 51 that is located outside the welding area 59 may be partially removed. "Outside" refers to the side away from the first opening 42 of the frame 41.

[0141] Subsequently, the deposition mask apparatus 40 is removed from the manufacturing apparatus 70. In this way, the deposition mask apparatus 40 is obtained as shown in Figure 21. At this time, the first mask stage surface 61 of the mask stage 60 separates from the second surface 55b of the mask 50, causing the mask 50 fixed to the frame 41 to flex along the first direction D1.

[0142] Next, a method for manufacturing an organic device 100 using a deposition apparatus 10 equipped with a deposition mask apparatus 40 will be described. Here, the deposition method for depositing the deposition material 7 onto a substrate 110 will be described with reference to Figures 22 to 24.

[0143] First, prepare the deposition mask apparatus 40 obtained by the process described above. That is, prepare a deposition apparatus 10 equipped with the deposition mask apparatus 40, a crucible 6 containing the deposition material 7, and a heater 8, as shown in Figure 22. In this case, the deposition mask apparatus 40 may be installed above the deposition source 6 using a mask holder 3.

[0144] Next, prepare the substrate 110. At this time, a substrate 110 with layers such as the first electrode layer 120 and the insulating layer 160 may be prepared. Then, load the substrate 110 into the deposition apparatus 10. Before loading the substrate 110 into the deposition apparatus 10, pre-treatment such as cleaning may be performed on the substrate 110.

[0145] Next, as shown in Figure 23, the substrate 110 is placed on the mask 50 of the deposition mask apparatus 40. At this time, the substrate holder 2 may be used to position the substrate 110 facing the mask 50 of the deposition mask apparatus 40. In this case, the substrate holder 2 may be moved in the second direction D2 and the third direction D3 to adjust the position of the substrate 110 relative to the mask 50. For example, the substrate 110 may be moved in the second direction D2 and the third direction D3 so that the alignment mark (not shown) of the substrate 110 overlaps with the alignment mark (not shown) of the mask 50 or the alignment mark 45 of the frame 41. When adjusting the position of the substrate 110 in the second direction D2 and the third direction D3, it is preferable that the first surface 111 of the substrate 110 does not come into contact with the first frame surface 41a of the frame 41.

[0146] In this case, the distance d2 along the first direction D1 between the first surface 111 of the substrate 110 and the first frame surface 41a of the frame 41 may be 0.5 mm or more and 2.0 mm or less. By having a distance d2 of 0.5 mm or more between the first surface 111 and the first frame surface 41a along the first direction D1, it is possible to suppress the substrate 110 from coming into contact with the frame 41 when adjusting the position of the substrate 110 in the second direction D2 and the third direction D3. Furthermore, by having a distance d2 of 2.0 mm or less, it is possible to easily attract the mask 50 towards the substrate 110 side (i.e., the second side S2 in the first direction D1) by the magnetic force of the magnet 5.

[0147] The distance d2 may be, for example, 0.5 mm or more, 0.8 mm or more, 1.0 mm or more, or 1.5 mm or more. The distance d2 may be, for example, 1.0 mm or less, 1.5 mm or less, 1.8 mm or less, or 2.0 mm or less. The range of the distance d2 may be defined by a first group consisting of 0.5 mm, 0.8 mm, 1.0 mm, and 1.5 mm, and / or a second group consisting of 1.0 mm, 1.5 mm, 1.8 mm, and 2.0 mm. The range of the distance d2 may be defined by a combination of any one value from the first group and any one value from the second group. The range of the distance d2 may be defined by a combination of any two values ​​from the first group. The range of the distance d2 may be defined by a combination of any two values ​​from the second group. For example, it may be 0.5 mm or more and 2.0 mm or less, 0.5 mm or more and 1.8 mm or less, 0.5 mm or more and 1.5 mm or less, 0.5 mm or more and 1.0 mm or less, 0.5 mm or more and 0.8 mm or less, 0.8 mm or more and 2.0 mm or less, 0.8 mm or more and 1.8 mm or less, 0.8 mm or more and 1.5 mm or less, 0.8 mm or more and 1.0 mm or less, 1.0 mm or more and 2.0 mm or less, 1.0 mm or more and 1.8 mm or less, 1.0 mm or more and 1.5 mm or less, 1.5 mm or more and 2.0 mm or less, 1.5 mm or more and 1.8 mm or less, and 1.8 mm or more and 2.0 mm or less.

[0148] Furthermore, when adjusting the position of the substrate 110 in the second direction D2 and the third direction D3, it is preferable that the first surface 111 of the substrate 110 does not come into contact with the first surface 55a of the mask 50. This helps to prevent scratches from occurring on the substrate 110.

[0149] Next, a deposition process is carried out in which the deposition material 7 is deposited onto the substrate 110 placed on the mask 50 of the deposition mask apparatus 40. At this time, the deposition material 7 may be deposited onto the substrate 110 through the through holes 56 of the mask 50 of the deposition mask apparatus 40. In this case, for example, as shown in Figure 24, the magnet 5 is placed on the second side S2 in the first direction D1 from the substrate holder 2. By providing the magnet 5 in this way, the mask 50 is attracted to the substrate 110 by magnetic force. As a result, the first surface 55a of the mask 50 comes into contact with the first surface 111 of the substrate 110. The mask 50 then adheres tightly to the substrate 110 in a state in which it is deformed to be convex toward the second side S2 in the first direction D1.

[0150] As described above, the shape of the mask 50 when fixed to the frame 41 is made to closely resemble the shape of the mask 50 in the vapor deposition process. This allows the vapor deposition mask apparatus 40 to be positioned at a desired location on the substrate 110. Therefore, the difference between the actual position and the design position of the through-holes 56 in the mask 50 when it is combined with the substrate 110 can be reduced. Furthermore, because the shape of the mask 50 when fixed to the frame 41 is made to closely resemble the shape of the mask 50 in the vapor deposition process, distortion and deformation of the mask 50 that may occur when the mask 50 comes into contact with the substrate 110 can be suppressed. Therefore, when vapor deposition material 7 is deposited onto the substrate 110, the adhesion between the mask 50 and the substrate 110 can be improved.

[0151] Next, the inside of the deposition apparatus 10 is evacuated by an exhaust means (not shown) so that the inside of the deposition apparatus 10 is in a high vacuum state. Then, the heater 8 heats the crucible 6 to evaporate the deposition material 7. The deposition material 7 that has evaporated from the crucible 6 and reached the deposition mask apparatus 40 then adheres to the substrate 110 through the through holes 56 of the mask 50 (see Figure 3).

[0152] In this way, the deposition material 7 is deposited onto the substrate 110 in a desired pattern corresponding to the positions of the through-holes 56 in the mask 50. This allows a deposition layer 130 to be formed on the substrate 110.

[0153] As described above, according to this embodiment, the manufacturing method of the deposition mask apparatus 40 includes the steps of: positioning the frame 41 so that the first opening 42 overlaps the first mask stage surface 61 of the mask stage 60 when viewed along the first direction D1; applying tension to the mask 50 in the second direction D2; and fixing the mask 50 to the first frame surface 41a while tension is applied to the mask 50. Furthermore, the first mask stage surface 61 is located on the second side S2 from the first frame surface 41a, and in the step of applying tension to the mask 50, the mask 50 comes into contact with the first mask stage surface 61 and the first frame surface 41a. This allows the mask 50 to be deformed so that it is convex toward the second side S2 in the first direction D1 when it is fixed to the frame 41. Therefore, the shape of the mask 50 when it is fixed to the frame 41 can be made to resemble the shape of the mask 50 in the deposition process. In other words, the mask 50 can be fixed to the frame 41 in a state in which it is deformed so that it is convex toward the second side S2 in the first direction D1, similar to the state in which the mask 50 is in contact with the substrate 110 during the deposition process. Therefore, the difference between the actual position and the design position of the through-hole 56 can be reduced in the mask 50 when it is combined with the substrate 110. As a result, the positional accuracy of the deposition layer 130, which is composed of the deposition material deposited on the substrate 110 through the through-hole 56, can be increased.

[0154] Furthermore, as described above, the substrate holder 2 may be an electrostatic chuck. Therefore, when adjusting the position of the substrate 110 relative to the mask 50, a gap may be provided between the first surface 111 of the substrate 110 and the first frame surface 41a so that the first surface 111 of the substrate 110 does not come into contact with the first frame surface 41a of the frame 41. According to this embodiment, even if a gap is provided between the first surface 111 and the first frame surface 41a, the shape of the mask 50 when fixed to the frame 41 can be made closer to the shape of the mask 50 in the deposition process. Therefore, the difference between the actual position and the design position of the through-hole 56 in the mask 50 when it is combined with the substrate 110 can be reduced.

[0155] Furthermore, according to this embodiment, the first mask stage surface 61 overlaps the entire effective area 53 when viewed along the first direction D1. In this case, when the mask 50 is pulled towards the substrate 110 by the magnetic force of the magnet 5, the entire effective area 53 of the mask 50 can come into contact with the substrate 110. This reduces the difference between the actual position and the design position of the through-holes 56 in the mask 50 when it is assembled with the substrate 110.

[0156] Furthermore, according to this embodiment, the manufacturing method of the vapor deposition mask apparatus 40 further includes an adjustment step to adjust the position of the mask 50 before the fixing step to fix the mask 50 to the first frame surface 41a. This makes it possible to further reduce the difference between the actual position and the design position of the through-holes 56 in the mask 50 when it is combined with the substrate 110.

[0157] Furthermore, according to this embodiment, the manufacturing apparatus 70 for the deposition mask apparatus 40 includes a clamp 71 that applies tension to the mask 50 in a second direction D2, a frame stage 72 that supports the frame 41, a mask stage 60 having a first mask stage surface 61 that, when viewed along the first direction D1, is positioned such that the first opening 42 of the frame 41 supported by the frame stage 72 overlaps, and a fixing mechanism 73 that fixes the mask 50 to the frame 41. The first mask stage surface 61 is located on the second side S2 than the first frame surface 41a. This makes it possible to make the shape of the mask 50 when fixed to the frame 41 closer to the shape of the mask 50 in the deposition process. As a result, the difference between the actual position and the design position of the through-holes 56 in the mask 50 when it is combined with the substrate 110 can be reduced. This makes it possible to improve the positional accuracy of the deposition layer 130, which is composed of deposition material deposited on the substrate 110 through the through-holes 56.

[0158] Furthermore, according to this embodiment, the mask stage 60 is movable along the first direction D1. This allows for easy adjustment of the position of the first mask stage surface 61 of the mask stage 60 in the first direction D1.

[0159] Furthermore, according to this embodiment, the frame stage 72 is movable along the first direction D1. This allows for easy adjustment of the position of the first frame surface 41a of the frame 41 in the first direction D1.

[0160] Furthermore, according to this embodiment, in the deposition mask apparatus 40, when the mask 50 is viewed along the first direction D1, in the region overlapping the first opening 42, it deflects towards the first side S1 along the first direction D1, and the maximum value da1 of the deflection amount da of the mask 50 is 1.1 mm or more and 15.3 mm or less. As a result, when the mask 50 is pulled towards the substrate 110 side (i.e., the second side S2 in the first direction D1) by the magnetic force of the magnet 5, the area of ​​the mask 50 that contacts the first surface 111 of the substrate 110 can be increased. In this case, the entire effective area 53 of the mask 50 can contact the substrate 110. As a result, the difference between the actual position and the design position of the through-hole 56 in the mask 50 when it is combined with the substrate 110 can be reduced. As a result, the positional accuracy of the deposition layer 130, which is composed of the deposition material deposited on the substrate 110 through the through-hole 56, can be increased. Furthermore, the magnetic force of the magnet 5 prevents wrinkles from forming on the mask 50 when it is brought into contact with the first surface 111 of the substrate 110.

[0161] It is possible to make various modifications to the embodiment described above. Other embodiments will be described below, with reference to the drawings as necessary. In the following description and the drawings used therein, parts that can be configured in the same way as the embodiment described above will be given the same reference numerals as those used for the corresponding parts in the embodiment described above, and redundant explanations will be omitted. In addition, if it is clear that the effects and advantages obtained in the embodiment described above can also be obtained in other embodiments, the explanation may be omitted.

[0162] In the embodiment described above, an example was given in which the first mask stage surface 61 is a flat surface. However, the invention is not limited to this, and the first mask stage surface 61 may be a curved surface. In this case, as shown in Figure 25, in the cross-section along the first direction D1 and the second direction D2, the contour of the first mask stage surface 61 may have an arc shape that is convex toward the second side S2 in the first direction D1. In this modified example, when the mask 50 is brought into contact with the first mask stage surface 61 and the first frame surface 41a during the tensioning process, it is possible to suppress the application of localized force to the mask 50. Therefore, it is possible to suppress damage to the mask 50.

[0163] Furthermore, as shown in Figure 26, the mask stage 60 may also have second mask stage surfaces 62 located on both sides of the first mask stage surface 61 in the second direction D2. In the example shown in Figure 26, the second mask stage surface 62 is inclined toward the first side S1 in the first direction D1 as it approaches the frame 41. In this modified example as well, when the mask 50 is brought into contact with the first mask stage surface 61 and the first frame surface 41a during the tensioning process, it is possible to suppress the application of localized force to the mask 50. This prevents damage to the mask 50.

[0164] Furthermore, as shown in Figure 27, in cross-sections along the first direction D1 and the second direction D2, the contour of the second mask stage surface 62 may have an arc shape that is at least partially convex toward the mask 50. In this case, the radius of curvature R of the arc shape is preferably 1.0 mm or more, and more preferably 3.0 mm or more. By setting the radius of curvature R to 1.0 mm or more, it is possible to suppress the application of local forces to the mask 50 when the mask 50 comes into contact with the first mask stage surface 61 and the first frame surface 41a during the tensioning process. Furthermore, by setting the radius of curvature R to 3.0 mm or more, it is possible to further suppress the application of local forces to the mask 50 when the mask 50 comes into contact with the first mask stage surface 61 and the first frame surface 41a during the tensioning process.

[0165] Furthermore, the radius of curvature R of the arc shape is preferably 6.0 mm or less, and more preferably 4.0 mm or less. By setting the radius of curvature R to 6.0 mm or less, the first mask stage surface 61 and the second mask stage surface 62 can be smoothly connected. This makes it possible to suppress the application of localized force to the mask 50 at the connection point between the first mask stage surface 61 and the second mask stage surface 62 when the mask 50 is brought into contact with the first mask stage surface 61 and the first frame surface 41a during the tensioning process. In addition, by setting the radius of curvature R to 4.0 mm or less, it is possible to further suppress the application of localized force to the mask 50 at the connection point between the first mask stage surface 61 and the second mask stage surface 62 when the mask 50 is brought into contact with the first mask stage surface 61 and the first frame surface 41a during the tensioning process.

[0166] The radius of curvature R may be, for example, 1.0 mm or more, 2.0 mm or more, 3.0 mm or more, or 3.5 mm or more. The radius of curvature R may be, for example, 3.5 mm or less, 4.0 mm or less, 5.0 mm or less, or 6.0 mm or less. The range of the radius of curvature R may be defined by a first group consisting of 1.0 mm, 2.0 mm, 3.0 mm, and 3.5 mm, and / or a second group consisting of 3.5 mm, 4.0 mm, 5.0 mm, and 6.0 mm. The range of the radius of curvature R may be defined by a combination of any one value from the first group and any one value from the second group. The range of the radius of curvature R may be defined by a combination of any two values ​​from the first group. The range of the radius of curvature R may be defined by a combination of any two values ​​from the second group. For example, it may be 1.0 mm or more and 6.0 mm or less, 1.0 mm or more and 5.0 mm or less, 1.0 mm or more and 4.0 mm or less, 1.0 mm or more and 3.5 mm or less, 1.0 mm or more and 3.0 mm or less, 1.0 mm or more and 2.0 mm or less, 2.0 mm or more and 6.0 mm or less, 2.0 mm or more and 5.0 mm or less, 2.0 mm or more and 4.0 mm or less, 2.0 mm or more and 3.5 mm or less, or 2.0 mm or more. It may be 3.0 mm or less, 3.0 mm or more and 6.0 mm or less, 3.0 mm or more and 5.0 mm or less, 3.0 mm or more and 4.0 mm or less, 3.0 mm or more and 3.5 mm or less, 3.5 mm or more and 6.0 mm or less, 3.5 mm or more and 5.0 mm or less, 3.5 mm or more and 4.0 mm or less, 4.0 mm or more and 6.0 mm or less, 4.0 mm or more and 5.0 mm or less, and 5.0 mm or more and 6.0 mm or less.

[0167] Furthermore, in the above-described embodiment, an example was shown in which the deposition mask apparatus 40 is equipped with multiple masks 50. However, it is not limited to this, and as shown in Figure 28, the deposition mask apparatus 40 may be equipped with a single mask 50 having multiple effective regions 53 arranged in a grid.

Claims

1. A method for manufacturing a vapor deposition mask device, The aforementioned deposition mask apparatus is A frame having a first frame surface and a second frame surface located to the first side in the first direction from the first frame surface, and including an opening extending from the first frame surface to the second frame surface, A mask is fixed to the first frame surface and includes through holes, The aforementioned manufacturing method is The steps include: positioning the frame such that the opening overlaps the mask stage surface of the mask stage when viewed along the first direction; A step of applying tension to the mask in a second direction perpendicular to the first direction, The process includes the step of fixing the mask to the first frame surface while tension is applied to the mask, The mask stage surface is located on the second side, opposite to the first side, from the first side, relative to the first frame surface. A method for manufacturing a vapor deposition mask apparatus, wherein, in the step of applying tension to the mask, the mask comes into contact with the mask stage surface and the first frame surface.

2. The method for manufacturing a vapor deposition mask apparatus according to claim 1, wherein the distance along the first direction between the mask stage surface and the first frame surface is 0.5 mm or more and 2.0 mm or less.

3. The mask includes a first region containing the through hole and a second region located around the first region. The method for manufacturing a vapor deposition mask apparatus according to claim 1, wherein the mask stage surface overlaps the entire area of ​​the first region when viewed along the first direction.

4. A method for manufacturing a vapor deposition mask apparatus according to claim 1, further comprising the step of adjusting the position of the mask before the step of fixing the mask to the first frame surface.

5. The method for manufacturing a vapor deposition mask apparatus according to claim 1, wherein the thickness of the mask is 50 μm or less.

6. A manufacturing apparatus for vapor deposition masks, The aforementioned deposition mask apparatus is A frame having a first frame surface and a second frame surface located to the first side in the first direction from the first frame surface, and including an opening extending from the first frame surface to the second frame surface, A mask is fixed to the first frame surface and includes through holes, The manufacturing apparatus for the aforementioned vapor deposition mask device is, A clamp that applies tension to the mask in a second direction perpendicular to the first direction, A frame stage that supports the frame, A mask stage having a mask stage surface that, when viewed along the first direction, is positioned such that the opening of the frame supported by the frame stage overlaps with it, The mask is provided with a fixing mechanism for fixing it to the frame, A manufacturing apparatus for a vapor deposition mask, wherein the mask stage surface is located on the second side opposite to the first side from the first side of the first frame surface.

7. The manufacturing apparatus for a vapor deposition mask apparatus according to claim 6, wherein the distance along the first direction between the mask stage surface and the first frame surface is 0.5 mm or more and 2.0 mm or less.

8. The manufacturing apparatus for a vapor deposition mask apparatus according to claim 6, wherein the mask stage is movable along the first direction.

9. The manufacturing apparatus for a vapor deposition mask apparatus according to claim 6, wherein the frame stage is movable along the first direction.

10. The mask includes a first region containing the through hole and a second region located around the first region. The manufacturing apparatus for a vapor deposition mask apparatus according to claim 6, wherein the mask stage surface overlaps the entire area of ​​the first region when viewed along the first direction.

11. A manufacturing apparatus for a vapor deposition mask apparatus according to claim 6, further comprising an adjustment mechanism for adjusting the position of the mask.

12. The manufacturing apparatus for a vapor deposition mask apparatus according to claim 6, wherein the thickness of the mask is 50 μm or less.

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