Semiconductor device

Abstract

This semiconductor device comprises: a support layer; a semiconductor element that has an element metal layer facing the support layer; and a joining layer that is interposed between the support layer and the element metal layer. The element metal layer has a first edge extending in a first direction perpendicular to the thickness direction of the semiconductor element. The joining layer has a second edge extending in the first direction and positioned nearest from the first edge. In the case where the second edge is spaced apart from the element metal layer as viewed in the thickness direction, the distance from the first edge to the second edge in a second direction perpendicular to the first direction and the thickness direction is at most twice the thickness of the joining layer.

Description

Semiconductor Devices

[0001] The present disclosure relates to semiconductor devices.

[0002] Patent Document 1 discloses an example of a semiconductor device (power module) in which multiple semiconductor elements are bonded to a conductor layer. The multiple semiconductor elements are bonded to the conductor layer via a solder layer. As a result, when the semiconductor device is in use, heat generated from the multiple semiconductor elements is conducted to the conductor layer via the solder layer.

[0003] However, in the semiconductor device disclosed in Patent Document 1, it has been confirmed that the heat dissipation at the bonding interfaces (the interface between the conductive layer and the solder layer, and the interface between the solder layer and the plurality of semiconductor elements) between the conductor layer and the plurality of semiconductor elements decreases over the long term. Therefore, in order to improve the reliability of the semiconductor device, a measure to stabilize the heat dissipation at the bonding interfaces over the long term is desired.

[0004] JP 2016-162773 A

[0005] In view of the above circumstances, one object of the present disclosure is to provide a semiconductor device that can stabilize heat dissipation properties over the long term at the bonding interface between a support layer and a semiconductor element.

[0006] The semiconductor device provided by the present disclosure comprises a support layer, a semiconductor element having an element metal layer facing the support layer, and a bonding layer interposed between the support layer and the element metal layer, wherein the element metal layer has a first edge extending in a first direction perpendicular to the thickness direction of the semiconductor element, and the bonding layer has a second edge located closest to the first edge and extending in the first direction, and when the second edge is far from the element metal layer when viewed in the thickness direction, the distance from the first edge to the second edge in a second direction perpendicular to the thickness direction and the first direction is less than twice the thickness of the bonding layer.

[0007] According to the semiconductor device of the present disclosure, it is possible to stabilize the heat dissipation properties at the bonding interface between the support layer and the semiconductor element for a long period of time.

[0008] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0009] FIG. 1 is a perspective view of a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a perspective view corresponding to FIG. 1, with the sealing resin omitted. FIG. 3 is a perspective view corresponding to FIG. 1, with the sealing resin and the second conductive member omitted. FIG. 4 is a plan view of the semiconductor device shown in FIG. 1. FIG. 5 is a plan view corresponding to FIG. 4, seen through the sealing resin. FIG. 6 is a partial enlarged view of FIG. 5. FIG. 7 is a plan view corresponding to FIG. 4, with the sealing resin and the second conductive member omitted. FIG. 8 is a right side view of the semiconductor device shown in FIG. 1. FIG. 9 is a bottom view of the semiconductor device shown in FIG. 1. FIG. 10 is a rear view of the semiconductor device shown in FIG. 1. FIG. 11 is a front view of the semiconductor device shown in FIG. 1. FIG. 12 is a cross-sectional view taken along line XII-XII in FIG. 5. FIG. 13 is a cross-sectional view taken along line XIII-XIII in FIG. 5. FIG. 14 is a partial enlarged view of FIG. 13. FIG. 15 is a cross-sectional view taken along line XV-XV in FIG. 5. FIG. 16 is a cross-sectional view taken along line XVI-XVI in FIG. 5. FIG. 17 is a cross-sectional view taken along line XVII-XVII in FIG. 5. FIG. 18 is a partially enlarged view of FIG. 7. FIG. 19 is a cross-sectional view taken along line XIX-XIX in FIG. 18. FIG. 20 is a partially enlarged view of FIG. 19. FIG. 21 is a partially enlarged view of FIG. 19. FIG. 22 is a cross-sectional view taken along line XXII-XXII in FIG. 18. FIG. 23 is a partially enlarged view of FIG. 22. FIG. 24 is a circuit diagram of the semiconductor device shown in FIG. 1. FIG. 25 is a partially enlarged plan view of a first modified example of the semiconductor device shown in FIG. 1, seen through the sealing resin. FIG. 26 is a cross-sectional view taken along line XXVI-XXVI in FIG. 25. FIG. 27 is a partially enlarged plan view of a second modified example of the semiconductor device shown in FIG. 1, seen through the sealing resin. Fig. 28 is a cross-sectional view taken along line XXVIII-XXVIII in Fig. 27. Fig. 29 is a partially enlarged cross-sectional view of a semiconductor device according to a second embodiment of the present disclosure. Fig. 30 is a partially enlarged cross-sectional view of the semiconductor device shown in Fig. 29. Fig. 31 is a partially enlarged view of Fig. 29. Fig. 32 is a partially enlarged cross-sectional view of a modified example of the semiconductor device shown in Fig. 29. Fig. 33 is a partially enlarged cross-sectional view of a semiconductor device according to a third embodiment of the present disclosure. Fig. 34 is a partially enlarged cross-sectional view of the semiconductor device shown in Fig. 33.

[0010] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present disclosure will be described with reference to the accompanying drawings.

[0011] A semiconductor device A10 according to a first embodiment of the present disclosure will be described with reference to FIGS. 1 to 24. The semiconductor device A10 includes a support 11, a support layer 12, a first input terminal 13, an output terminal 14, a second input terminal 15, a pair of first gate terminals 161, a pair of second gate terminals 162, a plurality of semiconductor elements 21, a bonding layer 23, a first conductive member 31, a second conductive member 32, a plurality of gate wires 41, and a sealing resin 50. The semiconductor device A10 further includes a pair of first detection terminals 171, a pair of second detection terminals 172, a pair of first diode terminals 181, a pair of second diode terminals 182, a plurality of detection wires 42, a plurality of diode wires 43, and a pair of control wirings 60. For ease of understanding, the sealing resin 50 is shown in FIGS. 2, 3, 5 to 7, and 18. In FIG. 5, the sealing resin 50 is shown in phantom (double-dashed lines). 3, 7 and 18, the second conductive member 32 is also shown in perspective for ease of understanding.

[0012] In the description of the semiconductor device A10, for convenience, the thickness direction of the semiconductor element 21 will be referred to as the "thickness direction z." One direction perpendicular to the thickness direction z will be referred to as the "first direction x." A direction perpendicular to both the thickness direction z and the first direction x will be referred to as the "second direction y."

[0013] The semiconductor device A10 converts a DC power supply voltage applied to the first input terminal 13 and the second input terminal 15 into AC power using the semiconductor element 21. The converted AC power is input to a power supply target such as a motor from the output terminal 14. The semiconductor device A10 is used in a power conversion circuit such as an inverter.

[0014] As shown in FIGS. 2 and 3 , the support 11 is located on the opposite side of the semiconductor elements 21 in the thickness direction z, with the support layer 12 sandwiched therebetween. The support 11 supports the support layer 12. In the semiconductor device A10, the support 11 is made of a DBC (Direct Bonded Copper) substrate. As shown in FIGS. 12 to 17 , the support 11 includes an insulating layer 111, an intermediate layer 112, and a heat dissipation layer 113. The support 11 is covered with a sealing resin 50 except for a portion of the heat dissipation layer 113.

[0015] As shown in FIGS. 12 to 17 , the insulating layer 111 includes a portion interposed between the intermediate layer 112 and the heat dissipation layer 113 in the thickness direction z. The insulating layer 111 is made of a material with relatively high thermal conductivity. For example, the insulating layer 111 is made of ceramics containing aluminum nitride (AlN). The insulating layer 111 may be made of an insulating resin sheet instead of ceramics. The thickness of the insulating layer 111 is thinner than the thickness of the support layer 12.

[0016] 12 to 17, the intermediate layer 112 is located on one side of the insulating layer 111 in the thickness direction z. The intermediate layer 112 includes a pair of regions spaced apart from each other in the first direction x. The composition of the intermediate layer 112 includes copper (Cu). That is, the intermediate layer 112 contains copper. As shown in FIG. 7, the intermediate layer 112 is surrounded by the periphery of the insulating layer 111 when viewed in the thickness direction z.

[0017] As shown in Figures 12 to 17, the heat dissipation layer 113 is located on the opposite side of the intermediate layer 112 and the support layer 12 in the thickness direction z, with the insulating layer 111 sandwiched therebetween. As shown in Figure 9, the heat dissipation layer 113 is exposed from the sealing resin 50. A heat sink (not shown) is bonded to the heat dissipation layer 113. The heat dissipation layer 113 contains copper. The thickness of the heat dissipation layer 113 is greater than the thickness of the insulating layer 111. When viewed in the thickness direction z, the heat dissipation layer 113 is surrounded by the periphery of the insulating layer 111.

[0018] As shown in FIGS. 2 and 3 , the support layer 12 is bonded to the support body 11. The support layer 12 contains a metal element. The metal element is copper. Therefore, the support layer 12 is conductive. The support layer 12 includes a first support layer 121 and a second support layer 122 that are spaced apart from each other in the first direction x. As shown in FIGS. 12 and 13 , the first support layer 121 has a first main surface 121A and a first back surface 121B that face opposite each other in the thickness direction z. The first main surface 121A faces the multiple semiconductor elements 21. As shown in FIG. 14 , the first back surface 121B is bonded to one of a pair of regions of the intermediate layer 112 via a first adhesive layer 19. The first adhesive layer 19 is, for example, a brazing material containing silver (Ag) in its composition. 12 and 13 , the second support layer 122 has a second main surface 122A and a second back surface 122B that face opposite each other in the thickness direction z. The second main surface 122A faces the same side as the first main surface 121A in the thickness direction z. The second back surface 122B is bonded to the other of the pair of regions of the intermediate layer 112 via the first adhesive layer 19.

[0019] As shown in FIGS. 3 and 7 , a plurality of semiconductor elements 21 are mounted on the support layer 12. The semiconductor elements 21 are, for example, metal-oxide-semiconductor field-effect transistors (MOSFETs). Alternatively, the semiconductor elements 21 may be switching elements such as insulated gate bipolar transistors (IGBTs) or diodes. In the description of the semiconductor device A10, the semiconductor elements 21 are n-channel MOSFETs with a vertical structure. The semiconductor elements 21 include a compound semiconductor substrate. The compound semiconductor substrate contains silicon carbide (SiC).

[0020] 7 , in the semiconductor device A10, the multiple semiconductor elements 21 include two first elements 21A, two second elements 21B, a third element 21C, and a fourth element 21D. The structures of the two second elements 21B are the same as the structures of the two first elements 21A. The structure of the fourth element 21D is the same as the structure of the third element 21C. The two first elements 21A and the third element 21C are mounted on the first main surface 121A of the first support layer 121. The two first elements 21A and the third element 21C are arranged along the second direction y. The two second elements 21B and the fourth element 21D are mounted on the second main surface 122A of the second support layer 122. The two second elements 21B and the fourth element 21D are arranged along the second direction y.

[0021] As shown in FIG. 22 , the plurality of semiconductor elements 21 have an element metal layer 211 , a first electrode 212 and a second electrode 213 .

[0022] As shown in Figures 19 and 22, the element metal layer 211 faces the support layer 12. In the semiconductor device A10, the element metal layer 211 is electrically connected to the circuit formed in the semiconductor element 21. Therefore, the element metal layer 211 corresponds to an electrode of the semiconductor element 21. Alternatively, the element metal layer 211 may not correspond to an electrode of the semiconductor element 21, such as in a switching element with a horizontal structure. In this case, the support layer 12 does not form a conductive path to the semiconductor element 21. A current corresponding to the power before being converted by the semiconductor element 21 flows through the element metal layer 211. In other words, the element metal layer 211 corresponds to the drain electrode of the semiconductor element 21.

[0023] 19 and 22 , the first electrode 212 is located on the opposite side of the element metal layer 211 in the thickness direction z. A current corresponding to the power converted by the semiconductor element 21 flows through the first electrode 212. In other words, the first electrode 212 corresponds to the source electrode of the semiconductor element 21.

[0024] 18 and 22 , the second electrode 213 is located on the same side as the first electrode 212 in the thickness direction z. A gate voltage for driving the semiconductor element 21 is applied to the second electrode 213. That is, the second electrode 213 corresponds to the gate electrode of the semiconductor element 21. When viewed in the thickness direction z, the area of ​​the second electrode 213 is smaller than the area of ​​the first electrode 212.

[0025] 7, the third element 21C and the fourth element 21D further have a third electrode 214 and a pair of fourth electrodes 215. The same current as that flowing through the first electrode 212 of the third element 21C flows through the third electrode 214 of the third element 21C. The same current as that flowing through the first electrode 212 of the fourth element 21D flows through the third electrode 214 of the fourth element 21D.

[0026] 24 , a half-bridge switching circuit is configured in the semiconductor device A20. Two first elements 21A and a third element 21C configure an upper arm circuit of the switching circuit. In the upper arm circuit, the two first elements 21A and the third element 21C are connected in parallel to each other. Two second elements 21B and a fourth element 21D configure a lower arm circuit of the switching circuit. In the lower arm circuit, the two second elements 21B and the fourth element 21D are connected in parallel to each other.

[0027] 24, each of the semiconductor elements 21 includes a switching function unit Q1 and a free wheel diode D2. Furthermore, the third element 21C and the fourth element 21D include a diode function unit D1. The pair of fourth electrodes 215 are electrically connected to the diode function unit D1.

[0028] 19 and 22 , the bonding layer 23 is interposed between the support layer 12 and one of the element metal layers 211 of the plurality of semiconductor elements 21. In the semiconductor device A10, the composition of the bonding layer 23 includes aluminum (Al). The Vickers hardness of the bonding layer 23 is lower than the Vickers hardness of the support layer 12.

[0029] In the semiconductor device A10, the element metal layers 211 of the multiple semiconductor elements 21 are bonded to the support layer 12 by solid-state diffusion via the bonding layer 23. As a result, the element metal layers 211 of the two first elements 21A and the third element 21C are electrically connected to the first support layer 121. The element metal layers 211 of the second element 21B and the fourth element 21D are electrically connected to the second support layer 122. Bonding by solid-state diffusion needs to be performed under high-temperature and high-pressure conditions.

[0030] As shown in Figure 21, a solid-phase diffusion bonding layer 24 is interposed between the support layer 12 and one of the element metal layers 211 of the multiple semiconductor elements 21. The solid-phase diffusion bonding layer 24 is a concept of a metallic bonding layer located at the interface of two adjacent metal layers as a result of the two metal layers being bonded together by solid-phase diffusion. The solid-phase diffusion bonding layer 24 does not necessarily exist as a metallic bonding layer with a significant thickness. The solid-phase diffusion bonding layer 24 can sometimes be confirmed as a region where impurities or voids introduced during bonding by solid-phase diffusion remain along the interface of the two metal layers.

[0031] 21 , the solid-phase diffusion bonding layer 24 includes a first bonding layer 241 and a second bonding layer 242 that are spaced apart from each other in the thickness direction z. The first bonding layer 241 is located between the support layer 12 and the bonding layer 23. In the semiconductor device A10, the first bonding layer 241 is located at the interface between the support layer 12 and the bonding layer 23. The second bonding layer 242 is located between the bonding layer 23 and an element metal layer 211 of any one of the multiple semiconductor elements 21. In the semiconductor device A10, the second bonding layer 242 is located at the interface between the bonding layer 23 and the element metal layer 211.

[0032] 18 , 19 , and 22 , the element metal layer 211 of the multiple semiconductor elements 21 has a first edge 211A and a third edge 211B. The first edge 211A and the third edge 211B are included in the periphery of the element metal layer 211. The first edge 211A extends in the first direction x. The first edge 211A includes a pair of sections spaced apart from each other in the second direction y. The third edge 211B extends in the second direction y. The third edge 211B includes a pair of sections spaced apart from each other in the first direction x.

[0033] 18 , 19 , and 22 , the bonding layer 23 has a second edge 23A and a fourth edge 23B. The second edge 23A and the fourth edge 23B are included in the periphery of the bonding layer 23. The second edge 23A is located closest to the first edge 211A of the element metal layer 211 and extends in the first direction x. The second edge 23A includes a pair of sections that are spaced apart from each other in the second direction y. The fourth edge 23B is located closest to the third edge 211B of the element metal layer 211 and extends in the second direction y. The fourth edge 23B includes a pair of sections that are spaced apart from each other in the first direction x.

[0034] The distances d1 and d2 shown in FIG. 18 will be described. The distance d1 is the distance in the second direction y from the first edge 211A of the element metal layer 211 to the second edge 23A of the bonding layer 23. The distance d2 is the distance in the first direction x from the third edge 211B of the element metal layer 211 to the fourth edge 23B of the bonding layer 23. When viewed in the thickness direction z, the value of the distance d1 is positive when the second edge 23A is spaced apart from the element metal layer 211. When viewed in the thickness direction z, the value of the distance d1 is zero or negative when the second edge 23A overlaps the element metal layer 211. Similar to the distance d1, when viewed in the thickness direction z, the distance d2 is positive when the fourth edge 23B is spaced apart from the element metal layer 211. When viewed in the thickness direction z, the distance d2 is zero or negative.

[0035] When the value of distance d1 is positive, 0<d1≦2t holds. That is, the magnitude of d1 (=|d1|) is equal to or less than twice the thickness t. When the value of distance d1 is 0 or negative (i.e., "non-positive"), -t≦d1≦0 holds. That is, the magnitude of d1 (=|d1|) is equal to or less than the thickness t. In other words, whether the value of distance d1 is positive or non-positive, the magnitude of d1 is equal to or less than 2t (|d1|≦2t). In particular, when the value of distance d1 is non-positive, the magnitude of d1 is equal to or less than t (|d1|≦t). Here, the thickness t is equal to or less than 0.3 mm, and the standard is 0.2 mm. This relationship also holds for distance d2. In semiconductor device A10, 0<d1≦2t and 0<d2≦2t hold. Therefore, when viewed in the thickness direction z, the periphery of the bonding layer 23 including the second edge 23A and the fourth edge 23B surrounds the periphery of the element metal layer 211 including the first edge 211A and the third edge 211B.

[0036] 20 , the bonding layer 23 has a bonding surface 231 facing the element metal layers 211 of the multiple semiconductor elements 21. The bonding layer 23 has a convex portion 232 that protrudes in the thickness direction z from the bonding surface 231. As shown in FIG. 20 , in the second direction y, the convex portion 232 is located between the first edge 211A of the element metal layer 211 and the second edge 23A of the bonding layer 23. A distance p1 in the second direction y between the first edge 211A and the convex portion 232 is shorter than a distance p2 in the second direction y between the convex portion 232 and the second edge 23A of the bonding layer 23.

[0037] 23 , in the first direction x, the convex portion 232 is also located between the third edge 211B of the element metal layer 211 and the fourth edge 23B of the bonding layer 23. A distance p3 in the first direction x between the third edge 211B and the convex portion 232 is shorter than a distance p4 in the first direction x between the convex portion 232 and the fourth edge 23B.

[0038] As shown in FIGS. 5 and 13 , the first input terminal 13 is located on one side of the support layer 12 in the first direction x and is connected to the first support layer 121. This allows the first input terminal 13 to be electrically connected to the element metal layers 211 of the two first elements 21A and the third element 21C via the first support layer 121. The first input terminal 13 is a P terminal (positive electrode) to which a DC power supply voltage to be converted is applied. The first input terminal 13 extends from the first support layer 121 in the first direction x. The first input terminal 13 has a covering portion 13A and an exposed portion 13B. As shown in FIG. 13 , the covering portion 13A is connected to the first support layer 121 and is covered with a sealing resin 50. The covering portion 13A is flush with the first main surface 121A of the first support layer 121. The exposed portion 13B extends from the covered portion 13A in the first direction x and is exposed from the sealing resin 50. The thickness of the first input terminal 13 is thinner than the thickness of the first support layer 121.

[0039] As shown in FIGS. 5 and 13 , the output terminal 14 is located on the opposite side of the support layer 12 from the first input terminal 13 in the first direction x and is connected to the second support layer 122. This allows the output terminal 14 to be electrically connected to the element metal layers 211 of the two second elements 21B and the fourth element 21D via the second support layer 122. The output terminal 14 outputs AC power converted by the semiconductor element 21. The output terminal 14 includes a pair of regions spaced apart from each other in the second direction y. The output terminal 14 has a covering portion 14A and an exposed portion 14B. As shown in FIG. 13 , the covering portion 14A is connected to the second support layer 122 and covered with the sealing resin 50. The covering portion 14A is flush with the second main surface 122A of the second support layer 122. The exposed portion 14B extends from the covering portion 14A in the first direction x and is exposed from the sealing resin 50. The thickness of the output terminal 14 is thinner than the thickness of the second support layer 122 .

[0040] As shown in FIGS. 5 and 12 , the second input terminal 15 is located on the same side of the support layer 12 as the first input terminal 13 in the first direction x, but is spaced apart from the support layer 12. The second input terminal 15 is electrically connected to the first electrodes 212 of the two second elements 21B and the fourth element 21D. The second input terminal 15 is an N-terminal (negative electrode) to which a DC power supply voltage to be converted is applied. The second input terminal 15 includes a pair of regions spaced apart from each other in the second direction y. The first input terminal 13 is located between the pair of regions in the second direction y. The second input terminal 15 has a covering portion 15A and an exposed portion 15B. As shown in FIG. 12 , the covering portion 15A is spaced apart from the first support layer 121 and is covered with sealing resin 50. The exposed portion 15B extends from the covering portion 15A in the first direction x and is exposed from the sealing resin 50.

[0041] The pair of control wirings 60 constitute part of the conductive paths between the first gate terminal 161, the second gate terminal 162, the first detection terminal 171, the second detection terminal 172, the pair of first diode terminals 181, and the pair of second diode terminals 182, and the plurality of semiconductor elements 21. As shown in FIGS. 5 to 7 , the pair of control wirings 60 includes a first wiring 601 and a second wiring 602. In the first direction x, the first wiring 601 is located between the two first elements 21A and the third element 21C, and the first input terminal 13 and the second input terminal 15. The first wiring 601 is bonded to the first main surface 121A of the first support layer 121. In the first direction x, the second wiring 602 is located between the two second elements 21B and the fourth element 21D, and the output terminal 14. The second wiring 602 is bonded to the second main surface 122A of the second support layer 122. 13 and 17 , the pair of control wires 60 includes an insulating layer 61, a plurality of wiring layers 62, a metal layer 63, a plurality of holders 64, and a plurality of covering layers 65. The pair of control wires 60 is covered with sealing resin 50 except for a portion of each of the plurality of holders 64 and the plurality of covering layers 65.

[0042] 14 , the insulating layer 61 includes a portion interposed between the plurality of wiring layers 62 and the metal layer 63 in the thickness direction z. The insulating layer 61 is made of, for example, ceramics. The insulating layer 61 may be made of an insulating resin sheet instead of ceramics.

[0043] 14 , the multiple wiring layers 62 are located on one side of the insulating layer 61 in the thickness direction z. Each of the multiple wiring layers 62 contains copper. As shown in FIG. 7 , the multiple wiring layers 62 include a first wiring layer 621, a second wiring layer 622, and a pair of third wiring layers 623. When viewed in the thickness direction z, the area of ​​each of the pair of third wiring layers 623 is smaller than the area of ​​each of the first wiring layer 621 and the second wiring layer 622.

[0044] 14 , the metal layer 63 is located on the opposite side of the multiple wiring layers 62 in the thickness direction z, with the insulating layer 61 sandwiched therebetween. The metal layer 63 contains copper. The metal layer 63 of the first wiring 601 is bonded to the first main surface 121A of the first support layer 121 by a second adhesive layer 68. The metal layer 63 of the second wiring 602 is bonded to the second main surface 122A of the second support layer 122 by a second adhesive layer 68. The second adhesive layer 68 is made of a material that may or may not be conductive. The second adhesive layer 68 is, for example, solder.

[0045] As shown in Figure 14, the multiple holders 64 are individually bonded to the multiple wiring layers 62 by a third adhesive layer 69. The multiple holders 64 are made of a conductive material such as metal. Each of the multiple holders 64 has a cylindrical shape extending along the thickness direction z. One end of each of the multiple holders 64 is individually bonded to the multiple wiring layers 62. The other end of each of the multiple holders 64 is exposed from the sealing resin 50. The third adhesive layer 69 is conductive. The third adhesive layer 69 is, for example, solder.

[0046] 13 and 17 , the multiple coating layers 65 individually cover the portions of the multiple holders 64 that are exposed from the sealing resin 50. The multiple coating layers 65 are individually disposed on second protrusions 58 of the sealing resin 50, which will be described later. The multiple coating layers 65 have electrical insulation properties. The multiple coating layers 65 are made of a material that includes, for example, resin.

[0047] As shown in FIGS. 1 to 3 , the first gate terminal 161, the second gate terminal 162, the first detection terminal 171, the second detection terminal 172, the pair of first diode terminals 181, and the pair of second diode terminals 182 are made of metal pins extending in the thickness direction z. These terminals are individually press-fitted into the multiple holders 64 of the pair of control wires 60. As a result, these terminals are supported by the multiple holders 64. Furthermore, as shown in FIGS. 10 , 11 , and 17 , a portion of each of these terminals is covered by one of the multiple covering layers 65 of the pair of control wires 60.

[0048] 6 , the first gate terminal 161 is press-fitted into one of the multiple holders 64 of the pair of control wirings 60 that is joined to the first wiring layer 621 of the first wiring 601. As a result, the first gate terminal 161 is supported by the holder 64 and is electrically connected to the first wiring layer 621 of the first wiring 601. Furthermore, the first gate terminal 161 is electrically connected to the second electrodes 213 of the two first elements 21A and the third element 21C. A gate voltage for driving the two first elements 21A and the third element 21C is applied to the first gate terminal 161.

[0049] 6 and 14 , the first detection terminal 171 is press-fitted into one of the multiple holders 64 of the pair of control wires 60, which is joined to the second wiring layer 622 of the first wire 601. As a result, the first detection terminal 171 is supported by the holder 64 and is electrically connected to the second wiring layer 622 of the first wire 601. Furthermore, the first detection terminal 171 is electrically connected to the first electrodes 212 of the two first elements 21A and the third electrode 214 of the third element 21C. A voltage corresponding to the maximum current among the current flowing through each of the first electrodes 212 of the two first elements 21A and the current flowing through the third electrode 214 of the third element 21C is applied to the first detection terminal 171.

[0050] 6, the pair of first diode terminals 181 are individually press-fitted into a pair of holders 64, out of the multiple holders 64 of the pair of control wires 60, that are joined to the pair of third wiring layers 623 of the first wires 601. As a result, the pair of first diode terminals 181 are supported by the pair of holders 64 and are electrically connected to the pair of third wiring layers 623 of the first wires 601. Furthermore, the pair of first diode terminals 181 are electrically connected to the pair of fourth electrodes 215 of the third element 21C.

[0051] 7 and 17 , the second gate terminal 162 is press-fitted into one of the holders 64 of the pair of control wirings 60 that is joined to the first wiring layer 621 of the second wiring 602. As a result, the second gate terminal 162 is supported by the holder 64 and is electrically connected to the first wiring layer 621 of the second wiring 602. Furthermore, the second gate terminal 162 is electrically connected to the second electrodes 213 of the two second elements 21B and the fourth element 21D. A gate voltage for driving the two second elements 21B and the fourth element 21D is applied to the second gate terminal 162.

[0052] 7 and 17 , the second detection terminal 172 is press-fitted into one of the multiple holders 64 of the pair of control wires 60 that is joined to the second wiring layer 622 of the second wire 602. As a result, the second detection terminal 172 is supported by the holder 64 and is electrically connected to the second wiring layer 622 of the second wire 602. Furthermore, the second detection terminal 172 is electrically connected to the first electrodes 212 of the two second elements 21B and the third electrode 214 of the fourth element 21D. A voltage corresponding to the maximum current among the current flowing through the first electrodes 212 of the two second elements 21B and the current flowing through the third electrode 214 of the fourth element 21D is applied to the second detection terminal 172.

[0053] 7 and 17 , the pair of second diode terminals 182 are individually press-fitted into a pair of holders 64, out of the multiple holders 64 of the pair of control wires 60, that are joined to the pair of third wiring layers 623 of the second wires 602. As a result, the pair of second diode terminals 182 are supported by the pair of holders 64 and are electrically connected to the pair of third wiring layers 623 of the second wires 602. Furthermore, the pair of second diode terminals 182 are electrically connected to the pair of fourth electrodes 215 of the fourth element 21D.

[0054] As shown in FIG. 7 , the multiple gate wires 41 are bonded to the second electrodes 213 of the two first elements 21A and the third element 21C and to the first wiring layer 621 of the first wiring 601. As a result, the first gate terminal 161 is electrically connected to the second electrodes 213 of the two first elements 21A and the third element 21C. Furthermore, as shown in FIG. 7 , the multiple gate wires 41 are bonded to the second electrodes 213 of the two second elements 21B and the fourth element 21D and to the first wiring layer 621 of the second wiring 602. As a result, the second gate terminal 162 is electrically connected to the second electrodes 213 of the two second elements 21B and the fourth element 21D. The composition of the multiple gate wires 41 includes gold (Au). Alternatively, the composition of the multiple gate wires 41 may include copper or aluminum.

[0055] As shown in FIG. 7 , the plurality of detection wires 42 are bonded to the first electrodes 212 of the two first elements 21A, the third electrode 214 of the third element 21C, and the second wiring layer 622 of the first wiring 601. As a result, the first detection terminal 171 is electrically connected to the first electrodes 212 of the two first elements 21A and the third electrode 214 of the third element 21C. Furthermore, as shown in FIG. 7 , the plurality of detection wires 42 are bonded to the first electrodes 212 of the two second elements 21B, the third electrode 214 of the fourth element 21D, and the second wiring layer 622 of the second wiring 602. As a result, the second detection terminal 172 is electrically connected to the first electrodes 212 of the two second elements 21B and the third electrode 214 of the fourth element 21D. The composition of the plurality of detection wires 42 includes gold. Alternatively, the composition of the plurality of detection wires 42 may include copper or aluminum.

[0056] As shown in FIG. 7 , the plurality of diode wires 43 are individually bonded to the pair of fourth electrodes 215 of the third element 21C and the pair of third wiring layers 623 of the first wiring 601. As a result, the pair of first diode terminals 181 are electrically connected to the pair of fourth electrodes 215 of the third element 21C. Furthermore, as shown in FIG. 7 , the plurality of diode wires 43 are individually bonded to the pair of fourth electrodes 215 of the fourth element 21D and the pair of third wiring layers 623 of the second wiring 602. As a result, the pair of second diode terminals 182 are electrically connected to the pair of fourth electrodes 215 of the fourth element 21D. The composition of the plurality of diode wires 43 includes gold. Alternatively, the composition of the plurality of diode wires 43 may include copper or aluminum.

[0057] As shown in FIG. 7 , the first conductive member 31 is bonded to the first electrodes 212 of the two first elements 21A, the first electrode 212 of the third element 21C, and the second main surface 122A of the second support layer 122. As a result, the first electrodes 212 of the two first elements 21A and the first electrode 212 of the third element 21C are electrically connected to the second support layer 122. The first conductive member 31 contains copper. The first conductive member 31 is a metal clip. The first conductive member 31 has a main body 311, a plurality of first joint portions 312, a plurality of first connecting portions 313, a second joint portion 314, and a second connecting portion 315.

[0058] The main body portion 311 forms a main portion of the first conductive member 31. As shown in Fig. 7 , the main body portion 311 extends in the second direction y. As shown in Fig. 13 , the main body portion 311 straddles between the first support layer 121 and the second support layer 122.

[0059] 7 , 18 , and 19 , the multiple first bonding portions 312 are individually bonded to the first electrodes 212 of the two first elements 21A and the third element 21C. Each of the multiple first bonding portions 312 faces the first electrode 212 of either the two first elements 21A or the third element 21C. Each of the multiple first bonding portions 312 has an opening 312A penetrating therethrough in the thickness direction z.

[0060] As shown in Fig. 7 , the multiple first connecting portions 313 are connected to the main body portion 311 and the multiple first bonding portions 312. The multiple first connecting portions 313 are spaced apart from one another in the second direction y. As shown in Fig. 13 , as viewed in the second direction y, the multiple first connecting portions 313 are inclined in a direction away from the first main surface 121A of the first support layer 121 as they extend from the multiple first bonding portions 312 toward the main body portion 311. As viewed in the second direction y, the acute angle α (see Fig. 22 ) formed by the multiple first connecting portions 313 with the multiple first bonding portions 312 is greater than or equal to 30° and less than or equal to 60°.

[0061] 7 and 13 , the second bonding portion 314 is bonded to the second main surface 122A of the second support layer 122. The second bonding portion 314 faces the second main surface 122A. The second bonding portion 314 extends in the second direction y. The dimension of the second bonding portion 314 in the second direction y is equal to the dimension of the main body portion 311 in the second direction y.

[0062] 7 and 13 , the second connecting portion 315 is connected to the main body portion 311 and the second bonding portion 314. When viewed in the second direction y, the second connecting portion 315 is inclined in a direction away from the second main surface 122A of the second support layer 122 as it extends from the second bonding portion 314 toward the main body portion 311. The dimension of the second connecting portion 315 in the second direction y is equal to the dimension of the main body portion 311 in the second direction y.

[0063] As shown in FIGS. 15 , 18 , 19 , and 22 , the semiconductor device A10 further includes a first conductive bonding layer 33. The first conductive bonding layer 33 is interposed between the first electrodes 212 of the two first elements 21A and the third element 21C and the multiple first bonding portions 312. A portion of the first conductive bonding layer 33 extends into the openings 312A of the multiple first bonding portions 312. The first conductive bonding layer 33 conductively bonds the first electrodes 212 of the two first elements 21A and the third element 21C to the multiple first bonding portions 312. The first conductive bonding layer 33 is, for example, solder. Alternatively, the first conductive bonding layer 33 may include a sintered body of metal particles.

[0064] 13, the semiconductor device A10 further includes a second conductive bonding layer 34. The second conductive bonding layer 34 is interposed between the second main surface 122A of the second support layer 122 and the second bonding portion 314. The second conductive bonding layer 34 conductively bonds the second main surface 122A and the second bonding portion 314. The second conductive bonding layer 34 is, for example, solder. Alternatively, the second conductive bonding layer 34 may include a sintered body of metal particles.

[0065] As shown in FIG. 6 , the second conductive member 32 is joined to the first electrodes 212 of the two second elements 21B, the first electrode 212 of the fourth element 21D, and the covering portion 15A of the second input terminal 15. This electrically connects the first electrodes 212 of the two second elements 21B and the first electrode 212 of the fourth element 21D to the second input terminal 15. The second conductive member 32 contains copper. The second conductive member 32 is a metal clip. The second conductive member 32 has a pair of main body portions 321, a plurality of third joint portions 322, a plurality of third connecting portions 323, a pair of fourth joint portions 324, a pair of fourth connecting portions 325, a pair of intermediate portions 326, and a plurality of cross beam portions 327.

[0066] As shown in Fig. 6 , the pair of main body portions 321 are positioned apart from each other in the second direction y. The pair of main body portions 321 extend in the first direction x. As shown in Fig. 12 , the pair of main body portions 321 are arranged parallel to the first main surface 121A of the first support layer 121 and the second main surface 122A of the second support layer 122. The pair of main body portions 321 are positioned further away from the first main surface 121A and the second main surface 122A than the main body portion 311 of the first conductive member 31.

[0067] As shown in FIG. 6 , the pair of intermediate portions 326 are spaced apart from each other in the second direction y and are located between the pair of main body portions 321 in the second direction y. The pair of intermediate portions 326 extend in the first direction x. The dimension of each of the pair of intermediate portions 326 in the first direction x is smaller than the dimension of each of the pair of main body portions 321 in the first direction x. When viewed in the thickness direction z, two second elements 21B are located on both sides of one of the pair of intermediate portions 326 in the second direction y. When viewed in the thickness direction z, one of the two second elements 21B and the fourth element 21D are located on both sides of the other of the pair of intermediate portions 326 in the second direction y.

[0068] 6, the third bonding portions 322 are bonded to the first electrodes 212 of the two second elements 21B and the fourth element 21D, respectively. Each of the third bonding portions 322 faces the first electrode 212 of either the two second elements 21B or the fourth element 21D.

[0069] 6 and 16 , the multiple third connecting portions 323 are connected to both sides of the multiple third joint portions 322 in the second direction y. Furthermore, the multiple third connecting portions 323 are connected to either the pair of main body portions 321 or the pair of intermediate portions 326. When viewed in the first direction x, each of the multiple third connecting portions 323 is inclined in a direction away from the second main surface 122A of the second support layer 122 as it moves from either one of the multiple third joint portions 322 to either the pair of main body portions 321 or the pair of intermediate portions 326.

[0070] 6 and 12, the pair of fourth joint portions 324 are joined to the covering portion 15A of the second input terminal 15. The pair of fourth joint portions 324 face the covering portion 15A.

[0071] 6 and 12 , the pair of fourth connecting portions 325 are connected to the pair of main body portions 321 and the pair of fourth bonding portions 324. When viewed in the second direction y, the pair of fourth connecting portions 325 are inclined in a direction away from the first main surface 121A of the first support layer 121 as they extend from the pair of fourth bonding portions 324 toward the pair of main body portions 321.

[0072] As shown in FIGS. 6 and 15 , the multiple cross beam portions 327 are arranged along the second direction y. As viewed in the thickness direction z, the multiple cross beam portions 327 include regions that individually overlap the multiple first joint portions 312 of the first conductive member 31. Of the multiple cross beam portions 327, the cross beam portion 327 located at the center in the second direction y is connected to the pair of intermediate portions 326 on both sides in the second direction y. Of the multiple cross beam portions 327, the remaining two cross beam portions 327 are connected to one of the pair of main body portions 321 and one of the pair of intermediate portions 326 on both sides in the second direction y. As viewed in the first direction x, the multiple cross beam portions 327 are convex in the thickness direction z toward the side toward which the first main surface 121A of the first support layer 121 faces.

[0073] 16 , the semiconductor device A10 further includes a third conductive bonding layer 35. The third conductive bonding layer 35 is interposed between the first electrodes 212 of the two second elements 21B and the fourth element 21D and the plurality of third bonding portions 322. The third conductive bonding layer 35 conductively bonds the first electrodes 212 of the two second elements 21B and the fourth element 21D and the plurality of third bonding portions 322. The third conductive bonding layer 35 is, for example, solder. Alternatively, the third conductive bonding layer 35 may include a sintered body of metal particles.

[0074] 12 , the semiconductor device A10 further includes a fourth conductive bonding layer 36. The fourth conductive bonding layer 36 is interposed between the covering portion 15A of the second input terminal 15 and the pair of fourth joint portions 324. The fourth conductive bonding layer 36 conductively bonds the covering portion 15A and the pair of fourth joint portions 324. The fourth conductive bonding layer 36 is, for example, solder. Alternatively, the fourth conductive bonding layer 36 may include a sintered body of metal particles.

[0075] As shown in FIGS. 12 , 13 , 15 , and 16 , the sealing resin 50 covers the support layer 12, the plurality of semiconductor elements 21, the first conductive members 31, and the second conductive members 32. The sealing resin 50 also covers a portion of each of the support body 11, the first input terminal 13, the output terminal 14, and the second input terminal 15. The sealing resin 50 has electrical insulation properties. The sealing resin 50 is made of a material containing, for example, black epoxy resin. As shown in FIGS. 4 and 8 to 11 , the sealing resin 50 has a top surface 51, a bottom surface 52, a pair of first side surfaces 53, a pair of second side surfaces 54, a pair of recesses 55, a pair of grooves 56, a plurality of first protrusions 57, and a plurality of second protrusions 58.

[0076] 12 and 13 , the top surface 51 faces the same side in the thickness direction z as the first main surface 121A of the first support layer 121. As shown in Fig. 12 and 13 , the bottom surface 52 faces the opposite side in the thickness direction z from the top surface 51. As shown in Fig. 9 , the heat dissipation layer 113 of the support body 11 is exposed from the bottom surface 52.

[0077] As shown in Figures 4 and 8, the pair of first side surfaces 53 are spaced apart from each other in the first direction x. The pair of first side surfaces 53 face the first direction x and extend in the second direction y. The pair of first side surfaces 53 are connected to the top surface 51. As shown in Figure 10, an exposed portion 13B of the first input terminal 13 and an exposed portion 15B of the second input terminal 15 are exposed from one of the pair of first side surfaces 53. As shown in Figure 11, an exposed portion 14B of the output terminal 14 is exposed from the other of the pair of first side surfaces 53.

[0078] 4, 10, and 11, the pair of second side surfaces 54 are spaced apart from each other in the second direction y. The pair of second side surfaces 54 face opposite each other in the second direction y and extend in the first direction x. The pair of second side surfaces 54 are connected to the top surface 51 and the bottom surface 52.

[0079] 4, 9, and 10, the pair of recesses 55 are recessed in the first direction x from the first side surfaces 53 on which the exposed portion 13B of the first input terminal 13 and the exposed portion 15B of the second input terminal 15 are exposed. The pair of recesses 55 extend from the top surface 51 to the bottom surface 52 in the thickness direction z. The pair of recesses 55 are located on both sides of the first input terminal 13 in the second direction y.

[0080] 8 , 9 , 12 , and 13 , the pair of grooves 56 are recessed from the bottom surface 52 in the thickness direction z and extend in the second direction y. Both sides of the pair of grooves 56 in the second direction y are connected to the pair of second side surfaces 54. The pair of grooves 56 are spaced apart from each other in the first direction x. The support layer 12 is located between the pair of grooves 56 in the first direction x.

[0081] As shown in FIGS. 8 , 10 , and 11 , the multiple first protrusions 57 protrude from the top surface 51 in the thickness direction z. As shown in FIG. 4 , the multiple first protrusions 57 are arranged at four corners of the sealing resin 50 when viewed in the thickness direction z. Each of the multiple first protrusions 57 has a truncated cone shape. As shown in FIGS. 4 and 12 , the multiple first protrusions 57 have mounting holes 571 recessed in the thickness direction z. The multiple first protrusions 57 are used when mounting the semiconductor device A10 to a driver module. The driver module is responsible for driving and controlling the semiconductor device A10.

[0082] As shown in Figures 8, 10, and 11, the multiple second protrusions 58 protrude from the top surface 51 in the thickness direction z. As shown in Figure 4, the multiple second protrusions 58 are individually arranged corresponding to the first gate terminal 161, the second gate terminal 162, the first detection terminal 171, the second detection terminal 172, the pair of first diode terminals 181, and the pair of second diode terminals 182. As shown in Figures 13 and 17, the multiple second protrusions 58 individually cover the multiple holders 64 of the pair of control wires 60. One ends of the multiple holders 64 are exposed from the multiple second protrusions 58.

[0083] Next, a semiconductor device A11, which is a first modified example of the semiconductor device A10, will be described with reference to Fig. 25 and Fig. 26. For ease of understanding, Fig. 25 is shown through the sealing resin 50. The position in Fig. 25 is the same as the position in Fig. 18.

[0084] 25 and 26 , in semiconductor device A11, the relationship between distance d1 and thickness t of bonding layer 23 is −t≦d1<0. Furthermore, the relationship between distance d2 and thickness t is −t≦d2<0. Therefore, when viewed in the thickness direction z, the periphery of bonding layer 23, including second edge 23A and fourth edge 23B, overlaps with element metal layer 211 of multiple semiconductor elements 21, and is surrounded by the periphery of element metal layer 211, including first edge 211A and third edge 211B.

[0085] Next, a semiconductor device A12, which is a second modification of the semiconductor device A10, will be described with reference to Fig. 27 and Fig. 28. For ease of understanding, Fig. 27 is shown through the sealing resin 50. The position in Fig. 27 is the same as the position in Fig. 18.

[0086] 27 and 28 , in the semiconductor device A12, the distance d1 and the distance d2 are both 0. Therefore, when viewed in the thickness direction z, the periphery of the bonding layer 23, including the second edge 23A and the fourth edge 23B, coincides with the periphery of the element metal layer 211 of the multiple semiconductor elements 21, including the first edge 211A and the third edge 211B.

[0087] Next, the effects of the semiconductor device A10 will be described.

[0088] The semiconductor device A10 includes a semiconductor element 21 having an element metal layer 211 facing a support layer 12, and a bonding layer 23 interposed between the support layer 12 and the element metal layer 211. The element metal layer 211 has a first edge 211A. The bonding layer 23 has a second edge 23A. The relationship between the distance d (distance d1) in the second direction y from the first edge 211A to the second edge 23A and the thickness t of the bonding layer 23 satisfies -t≦d≦2t. With this configuration, when the element metal layer 211 is bonded to the support layer 12 via the bonding layer 23, the concentration of shear stress at the bonding interface between the support layer 12 and the element metal layer 211 is reduced. This strengthens the bond between the two material layers at the bonding interface. Therefore, the semiconductor device A10 enables long-term stable heat dissipation at the bonding interface between the support layer 12 and the semiconductor element 21.

[0089] When viewed in the thickness direction z, the periphery of the bonding layer 23, including the second edge 23A, surrounds the periphery of the element metal layer 211 of the semiconductor element 21, including the first edge 211A. This increases the area of ​​the bonding interface between the support layer 12 and the element metal layer 211, thereby improving the bonding strength of the element metal layer 211 to the support layer 12. Furthermore, the thermal conduction efficiency of the bonding layer 23 in the direction perpendicular to the thickness direction z is improved, so that heat generated from the semiconductor element 21 can be conducted to the support layer 12 more quickly.

[0090] In addition to the above, when the support layer 12 contains a metal element and the bonding layer 23 contains aluminum, a convex portion 232 protruding from the bonding surface 231 in the thickness direction z is formed in the bonding layer 23. In the second direction y, the convex portion 232 is located between the first edge 211A of the element metal layer 211 of the semiconductor element 21 and the second edge 23A of the bonding layer 23. The convex portion 232 is obtained by bonding the element metal layer 211 to the support layer 12 by solid-state diffusion via the bonding layer 23. The formation of the convex portion 232 in the bonding layer 23 is evidence that compressive stress acted on the solid-state diffusion bonding layer 24 interposed between the support layer 12 and the element metal layer 211 during solid-state diffusion. Furthermore, if the distance p1 between the first edge 211A and the protrusion 232 in the second direction y is shorter than the distance p2 between the protrusion 232 and the second edge 23A in the second direction y, a larger compressive stress acts on the solid-phase diffusion bonding layer 24 during solid-phase diffusion. Therefore, the bonding state of the solid-phase diffusion bonding layer 24 becomes stronger.

[0091] The element metal layer 211 of the semiconductor element 21 is electrically connected to the support layer 12 and the circuit formed in the semiconductor element 21. In this case, when the semiconductor device A10 is used, if the bond between the two material layers at the bonding interface between the support layer 12 and the element metal layer 211 becomes stronger, long-term fluctuations in the current flowing at the bonding interface are suppressed. Therefore, long-term stability of the current flowing at the bonding interface between the support layer 12 and the semiconductor element 21 can be achieved.

[0092] The semiconductor device A10 further includes a support 11 located on the opposite side of the semiconductor element 21 with a support layer 12 sandwiched therebetween. The support layer 12 is bonded to the support 11. The support 11 includes an insulating layer 111 and a heat dissipation layer 113 located on the opposite side of the support layer 12 with the insulating layer 111 sandwiched therebetween. This allows the support layer 12 to function as a conductive path in the semiconductor device A10, while efficiently dissipating heat conducted from the semiconductor element 21 to the support layer 12 to the outside of the semiconductor device A10. In this case, if the thickness of the heat dissipation layer 113 is thicker than the thickness of the insulating layer 111, the thermal conduction efficiency of the heat dissipation layer 113 in a direction perpendicular to the thickness direction z is improved, which is preferable for improving the heat dissipation performance of the semiconductor device A10.

[0093] The sealing resin 50 has a pair of recesses 55 recessed in the first direction x from the first side surface 53, on which the first input terminal 13 and the second input terminal 15 are exposed, of the pair of first side surfaces 53. The pair of recesses 55 are located on both sides of the first input terminal 13 in the second direction y. This increases the creepage distance of the sealing resin 50 between the first input terminal 13 and the second input terminal 15. This can improve the dielectric strength voltage of the semiconductor device A10.

[0094] The sealing resin 50 has a pair of grooves 56 recessed from the bottom surface 52 and spaced apart from each other in the first direction x. The pair of grooves 56 extend in the second direction y. The support layer 12 is located between the pair of grooves 56 in the first direction x. This increases the creepage distance of the sealing resin 50 between the first input terminal 13 and the second input terminal 15 and the output terminal 14. This allows the semiconductor device A10 to have a further improved dielectric strength.

[0095] The composition of the first conductive member 31 and the second conductive member 32 includes copper. This reduces the electrical resistance of the first conductive member 31 and the second conductive member 32 compared to when the first conductive member 31 and the second conductive member 32 are wires containing aluminum in their composition. This is advantageous for passing a larger current through the semiconductor element 21.

[0096] A semiconductor device A20 according to a second embodiment of the present disclosure will be described with reference to Figures 29 to 31. In these figures, elements that are the same as or similar to those of the semiconductor device A10 described above are given the same reference numerals, and duplicate descriptions will be omitted. Here, the position in Figure 29 is the same as the position in Figure 19 of the semiconductor device A10. The position in Figure 30 is the same as the position in Figure 22 of the semiconductor device A10.

[0097] The semiconductor device A20 differs from the previously described semiconductor device A10 in that it further includes a first metal layer 25, a second metal layer 26, a third metal layer 27, and a fourth metal layer 28. In the semiconductor device A20, too, the element metal layers 211 of the multiple semiconductor elements 21 are bonded to the support layer 12 by solid-state diffusion via the bonding layer 23. In the following description of the semiconductor device A20, the first element 21A will be described as a representative of the multiple semiconductor elements 21.

[0098] 29 to 31 , the first metal layer 25 is interposed between the first support layer 121 (support layer 12) and the bonding layer 23. The first metal layer 25 is in contact with the bonding layer 23. The first metal layer 25 contains silver. The second metal layer 26 is interposed between the bonding layer 23 and the element metal layer 211 of the first element 21A. The second metal layer 26 is in contact with the bonding layer 23. The second metal layer 26 contains silver.

[0099] 29 to 31 , the third metal layer 27 is interposed between the first support layer 121 and the first metal layer 25. The third metal layer 27 is in contact with the first main surface 121A of the first support layer 121. The third metal layer 27 contains silver. The fourth metal layer 28 is interposed between the second metal layer 26 and the element metal layer 211 of the first element 21A. The fourth metal layer 28 is in contact with the element metal layer 211. The fourth metal layer 28 contains silver.

[0100] The compositions of the first metal layer 25, the second metal layer 26, the third metal layer 27, and the fourth metal layer 28 may contain nickel (Ni) in addition to silver. In this case, each of the first metal layer 25, the second metal layer 26, the third metal layer 27, and the fourth metal layer 28 has a configuration in which a silver layer is laminated on a nickel layer. The silver layer constituting the first metal layer 25 and the silver layer constituting the third metal layer 27 are located at the interface between the first metal layer 25 and the third metal layer 27. The silver layer constituting the second metal layer 26 and the silver layer constituting the fourth metal layer 28 are located at the interface between the second metal layer 26 and the fourth metal layer 28.

[0101] 31 , the first bonding layer 241 of the solid-state diffusion bonding layer 24 is located at the interface between the first metal layer 25 and the third metal layer 27. The second bonding layer 242 of the solid-state diffusion bonding layer 24 is located at the interface between the second metal layer 26 and the fourth metal layer 28.

[0102] Next, a semiconductor device A21, which is a modification of the semiconductor device A20, will be described with reference to Fig. 32. The position in Fig. 32 is the same as the position in Fig. 31.

[0103] 31, the semiconductor device A21 does not include the fourth metal layer 28. Therefore, the second bonding layer 242 of the solid-state diffusion bonding layer 24 is located at the interface between the second metal layer 26 and the element metal layer 211 of the first element 21A.

[0104] Next, the effects of the semiconductor device A20 will be described.

[0105] The semiconductor device A20 includes a semiconductor element 21 having an element metal layer 211 facing the support layer 12, and a bonding layer 23 interposed between the support layer 12 and the element metal layer 211. The element metal layer 211 has a first edge 211A. The bonding layer 23 has a second edge 23A. The relationship between the distance d (distance d1) in the second direction y from the first edge 211A to the second edge 23A and the thickness t of the bonding layer 23 is -t≦d≦2t. Therefore, the semiconductor device A20 also enables long-term stability of heat dissipation at the bonding interface interposed between the support layer 12 and the semiconductor element 21. Furthermore, by having a configuration similar to that of the semiconductor device A10, the semiconductor device A20 also achieves the effects of that configuration.

[0106] The semiconductor device A20 further includes a first metal layer 25, a second metal layer 26, and a third metal layer 27. The first metal layer 25 and the second metal layer 26 are in contact with the bonding layer 23. The third metal layer 27 is in contact with the support layer 12. The first metal layer 25, the second metal layer 26, and the third metal layer 27 contain silver. In this case, the first bonding layer 241 of the solid-state diffusion bonding layer 24 is located at the interface between the first metal layer 25 and the third metal layer 27. When metal layers containing silver are bonded together by solid-state diffusion, the strength of the metal bond is relatively high. This makes it possible to further strengthen the bond in the solid-state diffusion bonding layer 24.

[0107] A semiconductor device A30 according to a third embodiment of the present disclosure will be described with reference to Figures 33 and 34. In these figures, elements that are the same as or similar to those of the semiconductor device A10 described above are given the same reference numerals, and duplicated descriptions will be omitted. Here, the position in Figure 33 is the same as the position in Figure 19 of the semiconductor device A10. The position in Figure 34 is the same as the position in Figure 22 of the semiconductor device A10.

[0108] The semiconductor device A30 differs from the semiconductor device A10 in the configuration of the bonding layer 23. In the semiconductor device A30, the element metal layers 211 of the multiple semiconductor elements 21 are bonded to the support layer 12 by sintering via the bonding layer 23.

[0109] The bonding layer 23 includes a sintered body of metal particles, and the composition of the sintered body includes silver or copper.

[0110] In the semiconductor device A30, the relationship -t≦d1≦2t holds between the distance d1 shown in Fig. 33 and the thickness t of the bonding layer 23. Furthermore, the relationship -t≦d2≦2t holds between the distance d2 shown in Fig. 34 and the thickness t.

[0111] Next, the effects of the semiconductor device A30 will be described.

[0112] The semiconductor device A30 includes a semiconductor element 21 having an element metal layer 211 facing the support layer 12, and a bonding layer 23 interposed between the support layer 12 and the element metal layer 211. The element metal layer 211 has a first edge 211A. The bonding layer 23 has a second edge 23A. The relationship between the distance d (distance d1) in the second direction y from the first edge 211A to the second edge 23A and the thickness t of the bonding layer 23 is -t≦d≦2t. Therefore, the semiconductor device A30 also enables long-term stability of heat dissipation at the bonding interface interposed between the support layer 12 and the semiconductor element 21. Furthermore, by having a configuration similar to that of the semiconductor device A10, the semiconductor device A30 also achieves the effects of that configuration.

[0113] The present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the present disclosure can be freely modified in various ways.

[0114] The present disclosure includes embodiments described in the following appendices. Appendix 1. A semiconductor device comprising: a support layer; a semiconductor element having an element metal layer facing the support layer; and a bonding layer interposed between the support layer and the element metal layer, wherein the element metal layer has a first edge extending in a first direction perpendicular to a thickness direction of the semiconductor element, and the bonding layer has a second edge located closest to the first edge and extending in the first direction, and when the second edge is spaced apart from the element metal layer as viewed in the thickness direction, the distance from the first edge to the second edge in a second direction perpendicular to the thickness direction and the first direction is equal to or less than twice the thickness of the bonding layer. Appendix 2. The semiconductor device described in Appendix 1, wherein when the second edge overlaps the element metal layer as viewed in the thickness direction, the distance from the first edge to the second edge in the second direction is equal to or less than the thickness of the bonding layer. Appendix 3. Appendix 1: The semiconductor device according to Appendix 1, wherein, when viewed in the thickness direction, a periphery of the bonding layer including the second edge surrounds a periphery of the element metal layer including the first edge. Appendix 4: The semiconductor device according to Appendix 3, wherein the support layer contains a metal element. Appendix 5: The semiconductor device according to Appendix 4, wherein the metal element is copper. Appendix 6: The semiconductor device according to Appendix 4 or 5, further comprising a solid-state diffusion bonding layer interposed between the support layer and the element metal layer, wherein the bonding layer contains aluminum, and wherein the solid-state diffusion bonding layer is interposed between the support layer and the element metal layer, and the solid-state diffusion bonding layer includes a first bonding layer located between the support layer and the bonding layer and a second bonding layer located between the bonding layer and the element metal layer. Appendix 7: The semiconductor device described in Appendix 6 further comprises: a first metal layer interposed between the support layer and the bonding layer; a second metal layer interposed between the bonding layer and the element metal layer; and a third metal layer interposed between the support layer and the first metal layer, wherein the first metal layer and the second metal layer are in contact with the bonding layer; the third metal layer is in contact with the support layer; the first bonding layer is located at the interface between the first metal layer and the third metal layer; and the second bonding layer is located between the second metal layer and the element metal layer.Appendix 8. The semiconductor device according to Appendix 7, wherein the first metal layer, the second metal layer, and the third metal layer each contain silver. Appendix 9. The semiconductor device according to Appendix 7 or 8, further comprising a fourth metal layer interposed between the second metal layer and the element metal layer, wherein the fourth metal layer is in contact with the element metal layer, and the second bonding layer is located at the interface between the second metal layer and the fourth metal layer. Appendix 10. The semiconductor device according to Appendix 9, wherein the fourth metal layer contains silver. Appendix 11. The semiconductor device according to any of Appendixes 6 to 10, wherein the bonding layer has a bonding surface facing the element metal layer, and a convex portion protruding from the bonding surface in the thickness direction is formed on the bonding layer, and in the second direction, the convex portion is located between the first edge and the second edge. Appendix 12. The semiconductor device according to Appendix 11, wherein the distance in the second direction between the first edge and the convex portion is shorter than the distance in the second direction between the convex portion and the second edge. Appendix 13. The semiconductor device according to Appendix 4 or 5, wherein the bonding layer includes a sintered body of metal particles. Appendix 14. The semiconductor device according to Appendix 13, wherein the sintered body contains silver or copper. Appendix 15. The semiconductor device according to any of Appendixes 4 to 14, further comprising a support located on the opposite side of the semiconductor element with the support layer sandwiched therebetween, the support including an insulating layer, and the support layer being bonded to the support. Appendix 16. The semiconductor device according to Appendix 15, wherein the insulating layer has a thickness smaller than the thickness of the support layer. Appendix 17. The semiconductor device according to Appendix 16, wherein the support includes a heat dissipation layer located on the opposite side of the support layer with the insulating layer sandwiched therebetween, and the heat dissipation layer has a thickness greater than the thickness of the insulating layer. Appendix 18. The semiconductor device according to any of Appendixes 15 to 17, wherein the element metal layer is electrically connected to the support layer and a circuit formed in the semiconductor element.

[0115] A10, A20, A30: semiconductor device 11: support 111: insulating layer 112: intermediate layer 113: heat dissipation layer 12: support layer 121: first support layer 121A: first main surface 121B: first back surface 122: second support layer 122A: second main surface 122B: second support layer 13: first input terminal 13A: covered portion 13B: exposed portion 14: output terminal 14A: covered portion 14B: exposed portion 15: second input terminal 15A: covered portion 15B: exposed portion 161: first gate terminal 162: second gate terminal 171: first detection terminal 172: second detection terminal 181: first diode terminal 182: second diode terminal 19: first adhesive layer 21: semiconductor element 21A: first element 21B: Second element 21C: Third element 21D: Fourth element 211: Element metal layer 211A: First edge 211B: Third edge 212: First electrode 213: Second electrode 214: Third electrode 215: Fourth electrode 23: Bonding layer 23A: Second edge 23B: Fourth edge 231: Bonding surface 232: Convex portion 24: Solid-state diffusion bonding layer 241: First bonding layer 242: Second bonding layer 25: First metal layer 26: Second metal layer 27: Third metal layer 28: Fourth metal layer 31: First conductive member 311: Main body 312: First bonding portion 312A: Opening 313: First connecting portion 314: Second bonding portion 315: Second connecting portion 32: Second conductive member 321: Main body portion 322: Third bonding portion 322A: Opening 323: Third connecting portion 324: Fourth bonding portion 325: Fourth connecting portion 326: Middle portion 327: Horizontal beam portion 33: First conductive bonding layer 34: Second conductive bonding layer 35: Third conductive bonding layer 36: Fourth conductive bonding layer 41: Gate wire 42: Detection wire 43: Diode wire 50: Sealing resin 51: Top surface 52: Bottom surface 53: First side surface 54: Second side surface 55: Recess 56: Groove portion 57: First convex portion 571: Mounting hole 58: Second convex portion 60: Control wiring 601: First wiring 602: Second wiring 61: Insulating layer 62: Wiring layer 621: First wiring layer 622: Second wiring layer 623: Third wiring layer63: Metal layer 64: Holder 65: Covering layer 68: Second adhesive layer 69: Third adhesive layer t: Thickness d1, d2: Distance p1, p2, p3, p4: Spacing z: Thickness direction x: First direction y: Second direction

Claims

1. The support base and a semiconductor element having an element metal layer facing the support layer; a bonding layer interposed between the support layer and the element metal layer; the element metal layer has a first edge extending in a first direction perpendicular to a thickness direction of the semiconductor element; the bonding layer has a second edge located closest to the first edge and extending in the first direction; A semiconductor device, wherein when the second edge is separated from the element metal layer when viewed in the thickness direction, the distance from the first edge to the second edge in a second direction perpendicular to the thickness direction and the first direction is less than or equal to twice the thickness of the bonding layer.

2. When the second edge overlaps the element metal layer as viewed in the thickness direction, a distance from the first edge to the second edge in the second direction is equal to or less than a thickness of the bonding layer. The semiconductor device according to claim 1 .

3. The semiconductor device according to claim 1 , wherein, when viewed in the thickness direction, a periphery of the bonding layer including the second edge surrounds a periphery of the element metal layer including the first edge.

4. The semiconductor device according to claim 3 , wherein the support layer contains a metal element.

5. The semiconductor device according to claim 4 , wherein the metal element is copper.

6. a solid-state diffusion bonding layer interposed between the support layer and the element metal layer; The bonding layer contains aluminum, The semiconductor device according to claim 4 , wherein the solid-phase diffusion bonding layer includes a first bonding layer located between the support layer and the bonding layer, and a second bonding layer located between the bonding layer and the element metal layer.

7. a first metal layer interposed between the support layer and the bonding layer; a second metal layer interposed between the bonding layer and the element metal layer; a third metal layer interposed between the support layer and the first metal layer, the first metal layer and the second metal layer are in contact with the bonding layer; the third metal layer is in contact with the support layer; the first bonding layer is located at an interface between the first metal layer and the third metal layer; The semiconductor device of claim 6 , wherein the second bonding layer is located between the second metal layer and the element metal layer.

8. The semiconductor device according to claim 7 , wherein the first metal layer, the second metal layer and the third metal layer each contain silver.

9. a fourth metal layer interposed between the second metal layer and the element metal layer; the fourth metal layer is in contact with the element metal layer; The semiconductor device of claim 7 , wherein the second bonding layer is located at an interface between the second metal layer and the fourth metal layer.

10. The semiconductor device according to claim 9 , wherein the fourth metal layer contains silver.

11. the bonding layer has a bonding surface facing the element metal layer, The bonding layer has a protrusion protruding from the bonding surface in the thickness direction, The semiconductor device according to claim 6 , wherein the protruding portion is located between the first edge and the second edge in the second direction.

12. The semiconductor device according to claim 11 , wherein a distance between the first edge and the protruding portion in the second direction is shorter than a distance between the protruding portion and the second edge in the second direction.

13. The semiconductor device according to claim 4 , wherein the bonding layer includes a sintered body of metal particles.

14. The semiconductor device according to claim 13 , wherein the sintered body contains silver or copper.

15. a support body located on the opposite side of the semiconductor element with the support layer interposed therebetween; The support includes an insulating layer, 15. The semiconductor device according to claim 4, wherein the support layer is bonded to the support body.

16. The semiconductor device according to claim 15 , wherein the insulating layer has a thickness smaller than a thickness of the support layer.

17. the support body includes a heat dissipation layer located on the opposite side of the support layer with the insulating layer interposed therebetween, The semiconductor device according to claim 16 , wherein the heat dissipation layer is thicker than the insulating layer.

18. The semiconductor device according to claim 15 , wherein the element metal layer is electrically connected to the support layer and to a circuit formed in the semiconductor element.