Method for producing semiconductor nanoparticles, semiconductor nanoparticles, and light-emitting device

JPWO2023013361A5Pending Publication Date: 2025-07-10
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Patent Information

Application Number
JP2023539728
Authority / Receiving Office
JP · JP
Patent Type
Applications
Priority Date
2022-07-08
Filing Date
2022-07-08
Publication Date
2025-07-10

AI Technical Summary

Technical Problem

Current methods for producing semiconductor nanoparticles with high band-edge emission purity and efficiency are limited, as existing synthesis techniques do not effectively achieve the desired purity and quantum yield.

Method used

A method involving a mixture of copper, silver, indium, gallium, and sulfur salts with a gallium halide and organic solvent, subjected to heat treatment, to produce semiconductor nanoparticles with a core-shell structure, where the surface contains Ga and S, enhancing band-edge emission purity and quantum yield.

Benefits of technology

The method achieves semiconductor nanoparticles with band-edge emission purity of 60% or more and internal quantum yield of 15% or more, with emission peak wavelengths between 600 nm and 680 nm, significantly improving upon existing methods.

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Abstract

Provided is an efficient method for producing semiconductor nanoparticles that exhibit band edge emission. A method for producing semiconductor nanoparticles that includes subjecting a first mixture including a copper salt, a silver salt, a salt including indium and / or gallium, a gallium halide, and an organic solvent to a first heat treatment to obtain first semiconductor nanoparticles, at least one salt of the Cu salt, Ag salt, and salt that includes In and / or Ga in the first mixture including a compound that has a bond between a metal and sulfur (S).
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