Apparatus for producing light emitting device

Abstract

The present invention provides a production apparatus which is capable of continuously performing steps from fabrication to sealing of an organic compound film. This production apparatus is capable of continuously performing a patterning step of a light emitting device and a sealing step for preventing the front surface and the lateral surface of an organic layer from exposure to the atmosphere; and this production apparatus is capable of forming a fine light emitting device that has high luminance and high reliability. In addition, this production apparatus is able to be incorporated into in-line production equipment in which apparatuses are arranged in the order of the steps for a light emitting device, and enables the production with a high throughput.

Description

Light-emitting device manufacturing equipment

[0001] One embodiment of the present invention relates to an apparatus and a method for manufacturing a light-emitting device.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. The technical field of one embodiment of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method. Alternatively, one embodiment of the present invention relates to a process, a machine, manufacture, or a composition of matter. Therefore, more specifically, examples of the technical field of one embodiment of the present invention disclosed in this specification include a semiconductor device, a display device, a liquid crystal display device, a light-emitting device, a lighting device, a power storage device, a memory device, an imaging device, and an operation method thereof or a manufacturing method thereof.

[0003] In recent years, there has been a demand for higher definition display panels. Devices requiring high-definition display panels include, for example, smartphones, tablet terminals, and notebook computers. Furthermore, stationary display devices such as televisions and monitors are also required to have higher definitions in line with the trend toward higher resolutions. Furthermore, devices requiring the highest definition include, for example, devices for virtual reality (VR) or augmented reality (AR).

[0004] Representative examples of display devices applicable to the display panel include a liquid crystal display device, a light-emitting device equipped with a light-emitting device such as an organic EL (Electro Luminescence) element or a light-emitting diode (LED: Light Emitting Diode), and electronic paper that displays using an electrophoresis method.

[0005] For example, an organic EL element, which is a light-emitting element, has a configuration in which a layer containing a light-emitting organic compound is sandwiched between a pair of electrodes. By applying a voltage to this element, light can be emitted from the light-emitting organic compound. A display device using such an organic EL element does not require a backlight, which is necessary in a liquid crystal display device, and therefore a thin, lightweight, high-contrast, and low-power display device can be realized. For example, an example of a display device using an organic EL element is described in Patent Document 1.

[0006] JP 2002-324673 A

[0007] Known organic EL display devices capable of full color display include a configuration in which a white light emitting device is combined with a color filter, and a configuration in which RGB light emitting devices are formed on the same surface.

[0008] The latter configuration is ideal in terms of power consumption, but currently, in the manufacture of small and medium-sized panels, the luminescent materials are painted separately using metal masks, etc. However, because the process using metal masks has low alignment accuracy, the area occupied by the luminescent device within the pixel must be reduced, making it difficult to increase the aperture ratio.

[0009] Therefore, processes using metal masks pose challenges in increasing pixel density or light emission intensity. To increase the aperture ratio, it is preferable to expand the area of ​​the light-emitting device using a lithography process or other method. However, since the intrusion of atmospheric impurities (water, oxygen, hydrogen, etc.) into the organic compounds that make up the light-emitting device can deteriorate its reliability, multiple processes must be performed in an atmosphere-controlled area.

[0010] Alternatively, when light-emitting devices are produced using a vacuum deposition method that uses a metal mask, multiple lines of manufacturing equipment are required. For example, because the metal mask needs to be cleaned periodically, at least two or more lines of manufacturing equipment must be prepared, and one manufacturing equipment must be used for production while the other is under maintenance. Therefore, when considering mass production, multiple lines of manufacturing equipment are required. Therefore, there is a problem in that the initial investment for introducing the manufacturing equipment is very large.

[0011] In addition, small, high-resolution displays are desired for AR and VR applications. Displays for AR and VR applications are preferably narrow-framed because they are installed in devices such as glasses or goggles with small volumes. Therefore, it is preferable that drivers for driving pixel circuits be provided below the pixel circuits.

[0012] Therefore, one object of one embodiment of the present invention is to provide a light-emitting device manufacturing apparatus capable of continuously performing steps from processing an organic compound film to sealing. Another object is to provide a light-emitting device manufacturing apparatus capable of continuously performing steps from forming a light-emitting device to sealing. Another object is to provide a light-emitting device manufacturing apparatus capable of forming a light-emitting device without using a metal mask. Another object is to provide a light-emitting device manufacturing method.

[0013] Note that the description of these problems does not preclude the existence of other problems. Note that one embodiment of the present invention does not necessarily solve all of these problems. Note that problems other than these will become apparent from the description of the specification, drawings, claims, etc., and it is possible to extract other problems from the description of the specification, drawings, claims, etc.

[0014] One aspect of the present invention relates to an apparatus for manufacturing a light-emitting device.

[0015] One aspect of the present invention is an apparatus for manufacturing a light-emitting device, the apparatus having a first cluster and a second cluster, the second cluster being connected to the first cluster via a first buffer chamber, and for a workpiece on which an organic compound film, a first inorganic film, a second inorganic film, and a resist mask are stacked in that order, the first cluster having the functions of etching the first inorganic film and the second inorganic film, etching the organic compound film to form an organic compound layer, removing the resist mask, removing the second inorganic film, and forming a third inorganic film that covers a side surface of the organic compound layer, and the second cluster having the functions of applying a resin onto the third inorganic film in an inert gas atmosphere, removing unnecessary portions of the resin, and hardening the resin.

[0016] The first cluster may have a first dry etching apparatus, a second dry etching apparatus, a third dry etching apparatus, and a film forming apparatus, and the second cluster may have a coating apparatus, a first baking apparatus, an exposure apparatus, a developing apparatus, and a second baking apparatus.

[0017] The second dry etching device may also have an ashing function.

[0018] The film forming apparatus may be an ALD apparatus.

[0019] Furthermore, the device may have a third cluster, which is connected to the second cluster via a second buffer chamber, and which has the function of etching the third inorganic film and the first inorganic film using the resin as a mask.

[0020] The third cluster may include a fourth dry etching apparatus and a first wet etching apparatus, or may include a first wet etching apparatus and a second wet etching apparatus.

[0021] Alternatively, the third cluster may have a function of etching the third inorganic film using the resin as a mask, ashing the edge of the resin to make it retreat, and then etching the first inorganic film.

[0022] In this case, the third cluster may include a fourth dry etching apparatus, a dry etching apparatus or an ashing apparatus having an ashing function, and a first wet etching apparatus, or may include a first wet etching apparatus, a dry etching apparatus or an ashing apparatus having an ashing function, and a second wet etching apparatus.

[0023] Furthermore, the device may have a fourth cluster, which is connected to the third cluster via a third buffer chamber, and which has the function of depositing a conductive layer and an insulating layer on the organic compound layer.

[0024] The fourth cluster may include two or more of an evaporation system, a sputtering system, and an ALD system.

[0025] By using one embodiment of the present invention, it is possible to provide a manufacturing apparatus for a light-emitting device that can continuously perform steps from processing an organic compound film to sealing. Alternatively, it is possible to provide a manufacturing apparatus for a light-emitting device that can continuously perform steps from forming a light-emitting device to sealing. Alternatively, it is possible to provide a manufacturing apparatus for a light-emitting device that can form a light-emitting device without using a metal mask. Alternatively, it is possible to provide a manufacturing method for a light-emitting device.

[0026] Note that the description of these effects does not preclude the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of these effects. Note that effects other than these can be extracted from the description in the specification, drawings, claims, etc.

[0027] FIG. 1 is a diagram illustrating a manufacturing apparatus. FIGS. 2A and 2B are diagrams illustrating the manufacturing apparatus. FIG. 3 is a diagram illustrating the manufacturing apparatus. FIG. 4 is a diagram illustrating the manufacturing apparatus. FIG. 5 is a block diagram illustrating the manufacturing apparatus. FIGS. 6A and 6B are diagrams illustrating the manufacturing apparatus. FIGS. 7A and 7B are diagrams illustrating the manufacturing apparatus. FIG. 8 is a diagram illustrating the manufacturing apparatus. FIG. 9 is a block diagram illustrating the manufacturing apparatus. FIGS. 10A and 10B are diagrams illustrating the manufacturing apparatus. FIGS. 11A and 11B are diagrams illustrating the loading and unloading of cassettes. FIG. 11C is a diagram illustrating a transport vehicle and a transport container. FIG. 12A is a diagram illustrating a vacuum process apparatus. FIG. 12B is a diagram illustrating the loading of substrates into the vacuum process apparatus. FIGS. 13A to 13C are diagrams illustrating an example of the number of display devices per substrate. FIGS. 14A to 14G are diagrams illustrating a vacuum process apparatus. FIG. 15 is a diagram illustrating a display device. FIGS. 16A to 16C are diagrams illustrating a display device. 17A to 17E are diagrams illustrating a manufacturing method of a display device. FIGS. 18A to 18E are diagrams illustrating a manufacturing method of a display device. FIGS. 19A to 19E are diagrams illustrating a manufacturing method of a display device. FIGS. 20A to 20E are diagrams illustrating a manufacturing method of a display device. FIGS. 21A to 21E are diagrams illustrating a display device. FIG. 22 is a diagram illustrating a manufacturing apparatus.

[0028] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be readily understood by those skilled in the art that various modifications in form and detail may be made without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments shown below. In the configuration of the invention described below, the same parts or parts having similar functions will be designated by the same reference numerals in different drawings, and repeated description thereof may be omitted. In addition, hatching of the same elements constituting the drawings may be omitted or changed as appropriate in different drawings.

[0029] Embodiment 1 In this embodiment, a manufacturing apparatus for a light-emitting device according to one embodiment of the present invention will be described with reference to the drawings.

[0030] One aspect of the present invention is a manufacturing apparatus used to form a display device having a light-emitting device (also called a light-emitting element) such as an organic EL element. To miniaturize the organic EL element or increase the area occupied by a pixel, a lithography process is preferably used. However, the intrusion of impurities such as water, oxygen, and hydrogen into the organic EL element can impair its reliability. Therefore, it is necessary to devise measures such as sealing the surface and side surfaces of the patterned organic compound layer to prevent exposure to the atmosphere and controlling the atmosphere to have a low dew point during the manufacturing process.

[0031] The side surfaces of the organic compound layer are preferably sealed with an inorganic insulating layer and an organic insulating layer. In particular, forming the organic insulating layer so as to fill the gaps between the organic compound layers can prevent discontinuity of the electrode formed on the organic compound layer. The manufacturing apparatus of one embodiment of the present invention can form the inorganic insulating layer and the organic insulating layer that seal the side surfaces of the organic compound layer in a continuous process. Note that, in this specification and elsewhere, discontinuity refers to a phenomenon in which a layer, film, or electrode is separated due to the shape of the surface on which it is formed (e.g., a step, etc.).

[0032] In addition, the manufacturing apparatus of one embodiment of the present invention can continuously perform the film formation process for forming a light-emitting device, the sealing process, and the like, in addition to the above-mentioned processes. Therefore, a fine, high-brightness, and highly reliable light-emitting device can be formed. Furthermore, an in-line type in which the apparatuses are arranged in the order of the processes for the light-emitting device can be used, enabling high-throughput manufacturing.

[0033] Furthermore, a silicon wafer can be used as a support substrate for forming the light-emitting device. A silicon wafer on which a driving circuit, a pixel circuit, etc. have been formed in advance can be used as a support substrate, and the light-emitting device can be formed on these circuits. Therefore, a display device with a narrow frame suitable for AR or VR can be formed. The silicon wafer preferably has a diameter of 8 inches or more (e.g., 12 inches). Note that the support substrate for forming the light-emitting device is not limited to the above. For example, glass, quartz, ceramic, sapphire, resin, metal, alloy, semiconductor (e.g., GaAs), etc. can be used as the support substrate for forming the light-emitting device.

[0034] 1 is a diagram illustrating a manufacturing apparatus 10 for a light-emitting device according to one embodiment of the present invention. The manufacturing apparatus 10 can perform the following steps in the manufacturing process of a light-emitting device: processing an organic compound film into island-shaped organic compound layers; forming a layer to protect the side surfaces of the organic compound layers; and forming an organic insulating layer between the island-shaped organic compound layers. By performing these steps consecutively, the side surfaces of the organic compound layers can be sealed without being exposed to the atmosphere, resulting in a highly reliable light-emitting device.

[0035] In this specification and the like, the term "island-like" refers to a state in which two or more layers formed using the same material in the same process are physically separated. For example, an island-like organic compound layer refers to a state in which the organic compound layer is physically separated from an adjacent organic compound layer.

[0036] A substrate on which an organic compound film for forming a light-emitting layer of a light-emitting device, a first inorganic film provided on the organic compound film, a second inorganic film provided on the first inorganic film, and a resist mask for processing the first inorganic film and the second inorganic film into an island shape can be carried into the manufacturing apparatus 10. In other words, a chamber equivalent to the load chamber of the manufacturing apparatus 10 can be connected to an apparatus for performing a lithography process, which is a pre-process.

[0037] Furthermore, the substrate on which the third inorganic film and the organic insulating layer covering the side surfaces of the island-shaped organic compound layer are formed can be carried out from the chamber corresponding to the unload chamber of the manufacturing apparatus 10. A film forming device or the like for forming an organic compound layer and / or a conductive layer (common electrode) to be provided on the upper surface of the organic compound layer can be connected to the chamber corresponding to the unload chamber of the manufacturing apparatus 10.

[0038] The manufacturing apparatus 10 has cluster C10, cluster C11, and cluster C12. In this specification, a group of devices that share a transport device and the like is called a cluster. The clusters are connected via a buffer chamber. Configuration examples of cluster C10 and cluster C11 are shown in FIG. 1, and configuration examples of cluster C12 are shown in FIG. 2A and subsequent figures. Cluster C10 has a device that performs processing under reduced pressure. Cluster C11 has a device that performs processing under normal pressure. Cluster C12 has a device that performs processing under reduced pressure and a device that performs processing under normal pressure. Alternatively, cluster C12 has a device that performs processing under normal pressure.

[0039] Note that the types and numbers of chambers and apparatuses included in the clusters shown in this embodiment are shown as typical examples and are not limited thereto. For example, a cluster may have two or more identical apparatuses to improve throughput. Furthermore, when forming a laminated film, the laminated film may be formed using one film formation apparatus or multiple film formation apparatuses. For example, even if a cluster is exemplified as having one film formation apparatus, it may also be configured to have multiple film formation apparatuses. Furthermore, the multiple film formation apparatuses may be of different types.

[0040] The process in each cluster will be described in detail with reference to an example of a manufacturing method and an example of a manufacturing apparatus for a light-emitting device shown in Embodiment 2.

[0041] <Cluster C10> Cluster C10 is a group of devices for processing an organic compound film, a first inorganic film, and a second inorganic film into island shapes and covering the organic compound layer and the first inorganic film with a third inorganic film. Cluster C10 has a buffer chamber Ba, a buffer chamber Bb, a waiting chamber W, a transfer chamber TFa, and multiple processing chambers. Transfer chamber TFa is provided with a transport device AMa.

[0042] Here, the buffer chamber Ba corresponds to the load chamber in the cluster C10, and the buffer chamber Bb corresponds to the unload chamber in the cluster C10. The buffer chamber Bb is also a common element with the cluster C11.

[0043] The buffer chamber Ba, the buffer chamber Bb, the waiting chamber W, and the plurality of processing chambers are each connected to the transfer chamber TFa via a gate valve 20 .

[0044] The transfer device AMa can transfer a workpiece from any one of the buffer chamber Ba, the buffer chamber Bb, the waiting chamber W, and the plurality of processing chambers to any other one of the processing chambers.

[0045] During operation of the manufacturing equipment, the buffer chambers Ba and Bb are controlled to reduced pressure or normal pressure. When controlled to normal pressure, it is preferable to introduce an inert gas with a low dew point. The transfer chamber TFa, waiting chamber W, and multiple processing chambers are controlled to reduced pressure.

[0046] The plurality of processing chambers may each be, for example, an etching apparatus Ea, an etching apparatus Eb, an etching apparatus Ec, a plasma processing apparatus CN, a film forming apparatus D, etc. Furthermore, the workpiece to be input into the manufacturing apparatus may have, for example, a laminate in which an organic compound film, a first inorganic film, a second inorganic film, and a resist mask are laminated in this order.

[0047] The etching apparatus Ea may be a dry etching apparatus, and may be used in the step of processing the first inorganic film and the second inorganic film into island shapes.

[0048] The etching apparatus Eb may be a dry etching apparatus. The etching apparatus Eb may be used in a process of processing an organic compound film into an island-shaped organic compound layer using island-shaped first and second inorganic films as masks. The etching apparatus Eb may also have an ashing function. The resist mask can be removed by the ashing function.

[0049] The etching apparatus Ec may be a dry etching apparatus, and may be used in the step of removing the second inorganic film used as a mask.

[0050] In the above example, the etching equipment Eb has an ashing function, but the etching equipment Ea or Ec may have the ashing function. Also, in the above example, the elements to be processed are divided among the etching equipments Ea to Ec, but all of the above processes may be performed continuously by the etching equipments Ea to Ec.

[0051] The plasma processing device CN has, for example, a pair of parallel plate electrodes, and can generate plasma by applying a voltage to the electrodes in an inert gas atmosphere under reduced pressure. By irradiating the workpiece with plasma generated from the inert gas, reaction products and adsorbed gases remaining on the surface of the workpiece can be removed. Examples of inert gases that can be used include noble gases such as high-purity helium, argon, and neon, nitrogen, or a mixture thereof.

[0052] It is also preferable to perform a vacuum bake treatment in the same apparatus either before or after the plasma treatment to remove surface-adsorbed water, etc. The vacuum bake treatment is preferably performed within a temperature range that does not alter the organic compound layer, for example, 70°C or higher and 120°C or lower, more preferably 80°C or higher and 100°C or lower. The vacuum bake treatment may also be performed in the film formation apparatus D before film formation in the next process. It is also possible to configure the apparatus without providing the plasma treatment apparatus CN.

[0053] The standby chamber W can store multiple workpieces. For example, when the film forming apparatus D is a batch processing type, the throughput can be improved by storing multiple workpieces in the standby chamber W after processing in the etching apparatuses Ea to Ec and the plasma processing apparatus CN is completed. Note that when the film forming apparatus D is a single wafer processing type, the standby chamber W may not be provided.

[0054] It is also possible to provide a plurality of waiting chambers W. For example, a waiting chamber W may be provided in which workpieces are kept waiting after batch processing is completed in the film forming apparatus D. By removing all workpieces from the film forming apparatus D, it is no longer necessary for the workpieces to be kept waiting in the film forming apparatus D, and the throughput of the film forming apparatus D can be improved.

[0055] The film forming apparatus D may be, for example, an evaporation apparatus, a sputtering apparatus, a CVD (Chemical Vapor Deposition) apparatus, or an ALD (Atomic Layer Deposition) apparatus. It is particularly preferable to use an ALD apparatus, which has excellent coating properties. The film forming apparatus D can form a third inorganic film (protective film) that covers the island-shaped organic compound layer and the first inorganic film. The film forming apparatus D is not limited to forming a single layer, and can also form two or more layers of different types of films. Furthermore, the film forming apparatus D is not limited to a batch processing type, and may be a single-wafer processing type.

[0056] <Cluster C11> Cluster C11 is a group of devices for forming organic insulating layers between island-shaped organic compound layers. Cluster C11 includes a buffer chamber Bb, a buffer chamber Bc, a transfer chamber TFb, and multiple processing chambers. Transfer chamber TFb is provided with a transfer device AMb.

[0057] Here, the buffer chamber Bb corresponds to the load chamber in the cluster C11, and the buffer chamber Bc corresponds to the unload chamber in the cluster C11. The cluster C11 is connected to the cluster C10 via the buffer chamber Bb.

[0058] The buffer chambers Bb, Bc, and the plurality of processing chambers are each connected to the transfer chamber TFb via a gate valve 20 .

[0059] The transfer device AMb can transfer a workpiece from any one of the buffer chamber Bb, the buffer chamber Bc, and the plurality of processing chambers to any one of the other chambers.

[0060] During operation of the manufacturing equipment, the buffer chamber Bc is controlled to a reduced pressure or normal pressure. The transfer chamber TFb and the multiple processing chambers are controlled to normal pressure. The transfer chamber TFb and the multiple processing chambers are not limited to normal pressure, and may be controlled to a slightly negative or positive pressure lower than normal pressure. The air pressures in the transfer chamber TFb and the multiple processing chambers may be different.

[0061] The transfer chamber TFb and the multiple processing chambers can be controlled to have an inert gas atmosphere. The inert gas can be nitrogen or a noble gas such as argon or helium. It is preferable that the inert gas has a low dew point (for example, minus 50°C or less). By performing the process in an inert gas atmosphere with a low dew point, it is possible to prevent the incorporation of impurities and form a highly reliable light-emitting device.

[0062] For example, a coating apparatus CT, a baking apparatus HTa, an exposure apparatus EXPa, a developing apparatus Dev, an exposure apparatus EXPb, a baking apparatus HTb, etc. can be applied to each of the plurality of processing chambers.

[0063] The coating device CT can be a device that coats a resin that will become an organic insulating layer by a method such as spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, knife coating, etc. The resin can be a photosensitive resin such as an ultraviolet-curable resin.

[0064] The baking unit HTa may be a hot plate type or an oven type, and may be used to pre-bake the applied resin.

[0065] The exposure apparatus EXPa and the development apparatus DEV can be used as exposure apparatuses and development apparatuses for performing photolithography processes. When a positive photosensitive resin is used, the resin can be partially exposed by the exposure apparatus EXPa and developed by the development apparatus DEV, thereby removing the resin in the exposed areas. In this process, a resin (organic insulating layer) can be formed between island-shaped organic compound layers.

[0066] The exposure apparatus EXPb may be an exposure apparatus similar to the exposure apparatus EXPa, or may be a lamp apparatus with a simple configuration that emits ultraviolet light. The exposure apparatus EXPb irradiates the resin remaining after the development step with ultraviolet light.

[0067] Because organic compound layers have low heat resistance, it is preferable that the post-bake temperature of the resin be as low as possible. Depending on the resin material, exposure to light to promote a curing reaction may allow the temperature of the post-bake in the next step to be lowered. Therefore, it may be preferable to perform the exposure step using the exposure apparatus EXPb. However, depending on the resin material used, the exposure step may not be necessary, and the exposure apparatus EXPb may be omitted.

[0068] The bake unit HTb can be a bake unit similar to the bake unit HTa. The bake unit HTb reflows and hardens the resin (organic insulating layer) formed between the island-shaped organic compound layers. After the development process, the resin has steep side surfaces, creating approximate corners between the top and side surfaces of the resin. By performing a bake process in the bake unit HTb, the resin reflows and deforms to curve the approximate corners. Deforming the resin in this manner improves the coverage of the conductive layer formed on the multiple island-shaped organic compound layers and prevents discontinuities. This bake process is also called post-baking.

[0069] <Cluster C12> Cluster C12 is a group of equipment for etching the first inorganic film and the third inorganic film remaining on the organic compound layer. Here, the first inorganic film and the third inorganic film are etched using the resin (organic insulating layer) formed in Cluster C11 as a mask. However, if the etching proceeds excessively, cavities may form below the resin. Since the appropriate process varies depending on the material and film thickness of the first inorganic film and the third inorganic film, multiple equipment configurations can be applied to Cluster C12. Note that in the following description, the same reference numerals may be used to designate chambers or devices having the same configuration.

[0070] 2A shows Application Example 1 of an apparatus group that can be applied to cluster C12. Fig. 2A shows a configuration in which, for a first inorganic film and a third inorganic film remaining on an organic compound layer, first, the third inorganic film is dry-etched, and then the first inorganic film is wet-etched.

[0071] The cluster C12 shown in FIG. 2A includes a cluster C12a and a cluster C12b.

[0072] Cluster C12a is a group of devices mainly used for etching the third inorganic film. Cluster C12a includes buffer chambers Bc, Bd, transfer chamber TFc, and etching device Ed. Transfer chamber TFc is provided with transfer device AMc.

[0073] Here, the buffer chamber Bc corresponds to the load chamber in the cluster C12a, and the buffer chamber Bd corresponds to the unload chamber in the cluster C12a. The cluster C12a is connected to the cluster C11 via the buffer chamber Bc.

[0074] The buffer chamber Bc, the buffer chamber Bd, and the etching device Ed are each connected to the transfer chamber TFc via a gate valve 20 .

[0075] The transfer device AMc can transfer a workpiece from any one of the buffer chamber Bc, the buffer chamber Bd, and the etching device Ed to any one of the others.

[0076] During operation of the manufacturing equipment, the buffer chamber Bd is controlled to a reduced pressure or normal pressure. When controlled to normal pressure, it is preferable to introduce an inert gas with a low dew point. The transfer chamber TFc and the etching equipment Ed are controlled to a reduced pressure.

[0077] A dry etching apparatus can be used as the etching apparatus Ed. The etching apparatus Ed can be used mainly for the step of etching the third inorganic film. Here, since the third inorganic film is etched using the organic insulating layer as a mask, it is preferable to perform anisotropic etching so as not to create a cavity under the organic insulating layer.

[0078] Cluster C12b is a group of devices mainly used to etch the first inorganic film. Cluster C12b includes a buffer chamber Bd, a buffer chamber Be, a transfer chamber TFd, an etching device Ef, and a baking device HTc. Transfer chamber TFd is provided with a transfer device AMd.

[0079] Here, the buffer chamber Bd corresponds to the load chamber in the cluster C12b, and the buffer chamber Be corresponds to the unload chamber in the cluster C12b. The cluster C12b is connected to the cluster C12a via the buffer chamber Bd.

[0080] The buffer chamber Bd, the buffer chamber Be, the etching unit Ef, and the baking unit HTc are each connected to the transfer chamber TFd via a gate valve 20 .

[0081] The transfer device AMd can transfer a workpiece from any one of the buffer chamber Bd, the buffer chamber Be, the etching device Ef, and the baking device HTc to any other one of them.

[0082] During operation of the manufacturing equipment, the buffer chamber Be is controlled to a reduced pressure or normal pressure. The transfer chamber TFd, the etching equipment Ef, and the baking equipment HTc are controlled to normal pressure. When controlled to normal pressure, it is preferable to introduce an inert gas with a low dew point.

[0083] A wet etching apparatus can be applied to the etching apparatus Ef. The etching apparatus Ef can be used mainly for the process of etching the first inorganic film. Here, the first inorganic film is provided in contact with an organic compound layer that is susceptible to plasma damage. Therefore, it is preferable to remove the first inorganic film by wet etching.

[0084] The baking apparatus HTc may be a hot plate type or an oven type, and may be used to dry the workpiece after the wet etching process.

[0085] 2B shows an application example 2 of an apparatus group that can be applied to cluster C12. In FIG. 2B, both the first inorganic film and the third inorganic film remaining on the organic compound layer are wet-etched. By subjecting both the first inorganic film and the third inorganic film to wet etching, it is possible to simplify the apparatus configuration, improve throughput, and completely eliminate plasma damage to the organic compound layer.

[0086] The cluster C12 shown in FIG. 2B includes a cluster C12c.

[0087] Cluster C12c is a group of devices mainly used to etch the first inorganic film and the third inorganic film. Cluster C12c includes buffer chambers Bc, Be, transfer chambers TFe, etching equipment Ef, and baking equipment HTc. Transfer chamber TFc is provided with a transport device AMe.

[0088] Here, the buffer chamber Bc corresponds to the load chamber in the cluster C12c, and the buffer chamber Be corresponds to the unload chamber in the cluster C12c. The cluster C12c is connected to the cluster C11 via the buffer chamber Bc.

[0089] The buffer chamber Bc, the buffer chamber Be, the etching unit Ef, and the baking unit HTc are each connected to the transfer chamber TFe via a gate valve 20 .

[0090] The transfer device AMe can transfer a workpiece from any one of the buffer chamber Bd, the buffer chamber Be, the etching device Ef, and the baking device HTc to any other one of them.

[0091] During operation of the manufacturing equipment, the buffer chamber Be is controlled to a reduced pressure or normal pressure. The transfer chamber TFe, the etching equipment Ef, and the baking equipment HTc are controlled to normal pressure. When controlled to normal pressure, it is preferable to introduce an inert gas with a low dew point.

[0092] A wet etching apparatus can be applied to the etching apparatus Ef, which can be used mainly for etching the first inorganic film and the third inorganic film.

[0093] The baking apparatus HTc may be a hot plate type or an oven type, and may be used to dry the workpiece after the wet etching process.

[0094] <Application Example 3> Fig. 3 shows Application Example 3 of the apparatus group that can be applied to cluster C12. Fig. 3 shows a configuration in which, for the first inorganic film and the third inorganic film remaining on the organic compound layer, first, the third inorganic film is dry-etched, a part of the organic insulating layer that serves as a mask is ashed, and then the first inorganic film is wet-etched.

[0095] Before wet etching the first inorganic film, the organic insulating layer is ashed to recede the edges, thereby exposing the third inorganic film in the area where it overlapped with the organic insulating layer. Then, the first inorganic film and the exposed third inorganic film are wet-etched using the organic insulating layer as a mask, thereby making it difficult for cavities to form under the organic insulating layer.

[0096] The cluster C12 shown in FIG. 3 includes a cluster C12d and a cluster C12e.

[0097] Cluster C12d is a group of devices mainly used for etching the third inorganic film and ashing the organic insulating layer. Cluster C12d includes buffer chamber Bc, buffer chamber Bd, transfer chamber TFf, etching device Ed, and etching device Eg. Transfer chamber TFf is provided with transport device AMf.

[0098] Here, the buffer chamber Bc corresponds to the load chamber in the cluster C12d. The buffer chamber Bd corresponds to the unload chamber in the cluster C12d. The cluster C12d is connected to the cluster C11 via the buffer chamber Bc.

[0099] The buffer chamber Bc, the buffer chamber Bd, the etching device Ed, and the etching device Eg are each connected to the transfer chamber TFf via a gate valve 20 .

[0100] The transfer device AMf can transfer the workpiece from one of the buffer chamber Bc, the buffer chamber Bd, the etching device Ed, and the etching device Eg to another one of the other.

[0101] During operation of the manufacturing equipment, the buffer chamber Bd is controlled to a reduced pressure or normal pressure. When controlled to normal pressure, it is preferable to introduce an inert gas with a low dew point. The transfer chamber TFf, the etching equipment Ed, and the etching equipment Eg are controlled to a reduced pressure.

[0102] A dry etching apparatus can be used as the etching apparatus Ed. The etching apparatus Ed can be used mainly for the step of etching the third inorganic film. Here, since the third inorganic film is etched using the organic insulating layer as a mask, it is preferable to perform anisotropic etching so as not to create a cavity under the organic insulating layer.

[0103] The etching apparatus Eg may be a dry etching apparatus having an ashing function or an ashing apparatus, and may be used mainly in the process of recessing the edges of the organic insulating layer that serves as a mask when etching the first inorganic film and the third inorganic film.

[0104] Although the above example illustrates a configuration in which the etching device Ed and the etching device Eg are provided separately, the etching device Eg may perform continuous dry etching and ashing processes. In this case, the etching device Ed can be omitted.

[0105] Cluster C12e is a group of devices mainly used for etching the first inorganic film. Cluster C12e includes a buffer chamber Bd, a buffer chamber Be, a transfer chamber TFg, an etching device Ef, and a baking device HTc. Transfer chamber TFg is provided with a transport device AMg.

[0106] Here, the buffer chamber Bd corresponds to the load chamber in the cluster C12e, and the buffer chamber Be corresponds to the unload chamber in the cluster C12e. The cluster C12e is connected to the cluster C12d via the buffer chamber Bd.

[0107] The buffer chamber Bd, the buffer chamber Be, the etching unit Ef, and the baking unit HTc are each connected to the transfer chamber TFg via a gate valve 20 .

[0108] The transfer device AMg can transfer a workpiece from any one of the buffer chamber Bd, the buffer chamber Be, the etching device Ef, and the baking device HTc to any one of the others.

[0109] During operation of the manufacturing equipment, the buffer chamber Be is controlled to a reduced pressure or normal pressure. The transfer chamber TFg, the etching equipment Ef, and the baking equipment HTc are controlled to normal pressure. When controlled to normal pressure, it is preferable to introduce an inert gas with a low dew point.

[0110] A wet etching apparatus can be applied to the etching apparatus Ef, which can be used mainly for the step of etching the first inorganic film.

[0111] The baking apparatus HTc may be a hot plate type or an oven type, and may be used to dry the workpiece after the wet etching process.

[0112] <Application Example 4> Fig. 4 shows Application Example 4 of the apparatus group that can be applied to cluster C12. Fig. 4 shows a configuration in which, for the first inorganic film and the third inorganic film remaining on the organic compound layer, first, the third inorganic film is wet-etched, a part of the organic insulating layer that serves as a mask is ashed, and then the first inorganic film is wet-etched.

[0113] By ashing the organic insulating layer to set back the edges before wet etching the first inorganic film, it is possible to make it difficult for cavities to form under the organic insulating layer. Because the third inorganic film is wet etched, the device configuration is different from that of Application Example 3.

[0114] The cluster C12 shown in FIG. 4 includes a cluster C12f, a cluster C12g, and a cluster C12h.

[0115] Cluster C12f is a group of devices mainly used for etching the third inorganic film. Cluster C12f includes a buffer chamber Bc, a buffer chamber Bd, a transfer chamber TFh, an etching device Ef, and a baking device HTc. Transfer chamber TFh is provided with a transfer device AMh.

[0116] Here, the buffer chamber Bc corresponds to the load chamber in the cluster C12f, and the buffer chamber Bd corresponds to the unload chamber in the cluster C12f. The cluster C12f is connected to the cluster C11 via the buffer chamber Bc.

[0117] The buffer chamber Bc, the buffer chamber Bd, the etching unit Ef, and the baking unit HTc are each connected to the transfer chamber TFh via a gate valve 20 .

[0118] The transfer device AMh can transfer a workpiece from any one of the buffer chamber Bc, the buffer chamber Bd, the etching device Ef, and the baking device HTc to any one of the others.

[0119] During operation of the manufacturing equipment, the buffer chamber Bd is controlled to a reduced pressure or normal pressure. The transfer chamber TFh, the etching equipment Ef, and the baking equipment HTc are controlled to normal pressure. When controlled to normal pressure, it is preferable to introduce an inert gas with a low dew point.

[0120] A wet etching device can be applied to the etching device Ef, which can be used mainly for the step of etching the third inorganic film.

[0121] The baking apparatus HTc may be a hot plate type or an oven type, and may be used to dry the workpiece after the wet etching process.

[0122] Cluster C12g is a group of devices mainly used for ashing organic insulating layers. Cluster C12g includes buffer chambers Bd, Be, transfer chambers TFi, and etching devices Eg. Transfer chambers TFi are provided with transfer devices AMi.

[0123] Here, the buffer chamber Bd corresponds to the load chamber in the cluster C12g, and the buffer chamber Be corresponds to the unload chamber in the cluster C12g. The cluster C12g is connected to the cluster C12f via the buffer chamber Bd.

[0124] The buffer chamber Bd, the buffer chamber Be, and the etching device Eg are each connected to the transfer chamber TFi via a gate valve 20 .

[0125] The transfer device AMi can transfer a workpiece from any one of the buffer chamber Bd, the buffer chamber Be, and the etching device Eg to any one of the others.

[0126] During operation of the manufacturing equipment, the buffer chamber Be is controlled to a reduced pressure or normal pressure. When controlled to normal pressure, it is preferable to introduce an inert gas with a low dew point. The transfer chamber TFi and the etching equipment Eg are controlled to a reduced pressure.

[0127] The etching apparatus Eg may be a dry etching apparatus having an ashing function or an ashing apparatus, and may be used mainly in the step of recessing the edge of the organic insulating layer that serves as a mask.

[0128] Cluster C12h is a group of devices mainly used for etching the first inorganic film. Cluster C12h includes buffer chambers Be, Bf, transfer chambers TFj, etching apparatus Eh, and baking apparatus HTd. Transfer chamber TFj is provided with transfer apparatus AMj.

[0129] Here, the buffer chamber Be corresponds to the load chamber in the cluster C12h. The buffer chamber Bf corresponds to the unload chamber in the cluster C12h. The cluster C12h is connected to the cluster C12g via the buffer chamber Be.

[0130] The buffer chamber Be, the buffer chamber Bf, the etching unit Eh, and the baking unit HTd are each connected to the transfer chamber TFg via a gate valve 20 .

[0131] The transfer device AMj can transfer a workpiece from any one of the buffer chamber Be, the buffer chamber Bf, the etching device Eh, and the baking device HTd to any other one of them.

[0132] During operation of the manufacturing equipment, the buffer chamber Bf is controlled to a reduced pressure or atmospheric pressure. The transfer chamber TFj, the etching equipment Eh, and the baking equipment HTd are controlled to atmospheric pressure. When controlled to atmospheric pressure, it is preferable to introduce an inert gas with a low dew point.

[0133] A wet etching apparatus can be applied to the etching apparatus Eh, and the etching apparatus Eh can be used mainly for the step of etching the first inorganic film.

[0134] The baking apparatus HTc may be a hot plate type or an oven type, and may be used to dry the workpiece after the wet etching process.

[0135] In the above-described application examples 1 to 4 of cluster C12, the first inorganic film and the third inorganic film may be formed of the same material. Furthermore, even if the first inorganic film and the third inorganic film are formed of different materials, the etching selectivity may not differ significantly. Therefore, when etching the first inorganic film, a portion of the third inorganic film may also be etched. Alternatively, a portion of the third inorganic film may also be intentionally etched when etching the first inorganic film.

[0136] 5 is a block diagram illustrating a light-emitting device manufacturing apparatus according to one embodiment of the present invention. The manufacturing apparatus has a plurality of clusters arranged in the order of processes, some of which include the manufacturing apparatus 10 (clusters C10 to C12) of Configuration Example 1. A substrate forming a light-emitting device is moved between the plurality of clusters in order and subjected to each process.

[0137] 3 is an example of a manufacturing apparatus having clusters C1 to C13. Clusters C1 to C13 are connected in order via a buffer chamber, and a workpiece 60a introduced into cluster C1 can be removed from cluster C13 as workpiece 60b on which a light-emitting device has been formed. Note that other clusters can be connected before or after clusters C1 to C13.

[0138] Here, clusters C1, C3, C6, C9, C11, and C12 have equipment groups for performing processes under controlled atmosphere, and clusters C2, C4, C5, C7, C8, C10, and C13 have equipment groups for performing vacuum processes (reduced pressure processes).

[0139] Cluster C1 mainly includes devices for cleaning and baking workpieces. Clusters C2, C5, and C8 mainly include devices for forming organic compounds contained in light-emitting devices. Clusters C3, C6, and C9 mainly include devices for performing lithography processes. Clusters C4, C7, and C12 mainly include devices for performing etching processes and ashing processes. Cluster C13 mainly includes devices for forming organic compounds contained in light-emitting devices and devices for forming protective films that seal the light-emitting devices. Clusters C10 to C12 mainly include devices described in Configuration Example 1.

[0140] Next, details of clusters C1 to C9 and cluster C13 will be described. Note that common reference numerals will be used for the buffer chamber, transfer chamber, and transport device.

[0141] <Cluster C1> Figure 6A is a top view illustrating an apparatus configuration applicable to cluster C1. Cluster C1 is a group of apparatuses for performing a cleaning process. Cluster C1 has a buffer chamber B1 corresponding to a load chamber, a buffer chamber B2 corresponding to an unload chamber, a transfer chamber TF, and multiple atmospheric pressure process apparatuses A. A transport apparatus AM is provided in the transfer chamber TF.

[0142] The buffer chamber B1, the buffer chamber B2, and the plurality of atmospheric pressure process devices A are each connected to the transfer chamber TF via a gate valve 20.

[0143] The transfer device AM can transfer a workpiece from any one of the buffer chamber B1, the buffer chamber B2, and the plurality of atmospheric pressure process devices A to any other one of the other devices.

[0144] During operation of the manufacturing equipment, the buffer chambers B1 and B2 are controlled to reduced pressure or atmospheric pressure. The transfer chamber TF and the plurality of atmospheric pressure process devices A are controlled to atmospheric pressure. When controlled to atmospheric pressure, it is preferable to introduce an inert gas with a low dew point.

[0145] A valve for introducing an inert gas (IG) is connected to cluster C1 (see FIG. 5), allowing for control of the inert gas atmosphere. The inert gas can be nitrogen or a noble gas such as argon or helium. It is also preferable for the inert gas to have a low dew point (for example, below -50°C). By performing the process in an inert gas atmosphere with a low dew point, it is possible to prevent the incorporation of impurities and form a highly reliable light-emitting device.

[0146] The atmospheric pressure process equipment A of the cluster C1 can be a cleaning equipment, a baking equipment, etc. For example, a spin cleaning equipment, a batch type cleaning equipment, a hot plate type or an oven type baking equipment, etc. The baking equipment may also be a vacuum baking equipment.

[0147] Although FIG. 6A shows an example in which the cluster C1 has two atmospheric pressure process devices A (atmospheric pressure process devices A1 and A2), the cluster C1 may have three or more atmospheric pressure process devices A to improve throughput.

[0148] <Clusters C2, C5, C8> Figure 6B is a top view illustrating an apparatus configuration applicable to clusters C2, C5, and C8. Clusters C2, C5, and C8 are groups of apparatuses primarily used to form films of organic compounds. Clusters C2, C5, and C8 each have a buffer chamber B1 corresponding to a load chamber, a buffer chamber B2 corresponding to an unload chamber, a transfer chamber TF, and multiple vacuum process devices V. A transport device AM is provided in the transfer chamber TF.

[0149] The buffer chamber B1, the buffer chamber B2, and the plurality of vacuum process devices V are each connected to the transfer chamber TF via a gate valve 20.

[0150] The transfer device AM can transfer a workpiece from any one of the buffer chamber B1, the buffer chamber B2, and the plurality of vacuum process devices V to any one of the others.

[0151] During operation of the manufacturing equipment, the buffer chambers B1 and B2 are controlled to reduced pressure or normal pressure. When controlled to normal pressure, it is preferable to introduce an inert gas with a low dew point. The transfer chamber TF and the multiple vacuum process devices V are controlled to reduced pressure.

[0152] A vacuum pump VP is connected to the clusters C2, C5, and C8 (see FIG. 5), and a gate valve 20 is provided between each of the clusters and the transfer chamber TF. Therefore, different processes can be performed in parallel in each vacuum process device V.

[0153] The vacuum process refers to a process carried out in a controlled environment under reduced pressure. Therefore, the vacuum process includes not only a process under high vacuum, but also a process in which a process gas is introduced and pressure is controlled under reduced pressure.

[0154] The vacuum process equipment V included in the clusters C2, C5, and C8 may be, for example, a deposition equipment such as a vapor deposition equipment, a sputtering equipment, a CVD equipment, an ALD equipment, etc. Also, a surface treatment equipment may be included.

[0155] The surface treatment device can be configured similarly to the plasma treatment device CN described above and can perform a surface treatment process. The surface condition (wettability, etc.) of the workpiece may change depending on the previous process. If the next process on the workpiece is to form an organic compound film, defects such as peeling may occur if the surface of the workpiece is not in an appropriate state. Therefore, it is preferable to improve the surface condition of the workpiece by plasma treatment using a halogen-containing gas in the surface treatment device.

[0156] For example, when the surface to be coated is an oxide, the oxide surface may become hydrophilic in a previous process. In this case, the hydrophilic groups on the surface to be coated can be replaced with fluorine or a fluoroalkyl group by plasma treatment using a fluorine-based gas, thereby making the surface hydrophobic and preventing peeling defects. Examples of fluorine-based gases include CF ４ , C ２ F ６ , C ４ F ６ , C ４ F ８, CHF ３ Fluorocarbons such as SF ６ , N.F. ３ Furthermore, helium, argon, hydrogen, or the like may be added to these gases.

[0157] Alternatively, a coating device may be used as the surface treatment device S. For example, methods such as spin coating, dip coating, or spray coating, or a method of exposing the workpiece to a coating agent atmosphere, can be used. For example, a silane coupling agent such as HMDS (Hexamethyldisilazane) can be used as the coating agent, which can hydrophobize the surface of the workpiece. However, since the coating device is a normal pressure process, it is preferable to provide a separate cluster with a coating device.

[0158] The CVD apparatus may be a thermal CVD apparatus using heat or a plasma-enhanced CVD (PECVD) apparatus using plasma, etc. The ALD apparatus may be a thermal ALD apparatus using heat or a plasma-enhanced ALD apparatus using plasma-excited reactants, etc.

[0159] 6B shows an example in which the clusters C2, C5, and C8 each have six atmospheric pressure process devices A (vacuum process devices V1 to V6), but to improve throughput or prevent contamination, they may each have seven or more vacuum process devices V. Furthermore, each of the clusters C2, C5, and C8 may have a configuration in which multiple clusters are included.

[0160] <Clusters C3, C6, C9> Figure 7A is a top view illustrating an apparatus configuration applicable to clusters C3, C6, and C9. Clusters C3, C6, and C9 are groups of apparatuses primarily used for lithography processes. Clusters C2, C5, and C8 each have a buffer chamber B1 corresponding to a load chamber, a buffer chamber B2 corresponding to an unload chamber, a transfer chamber TF, and multiple atmospheric pressure process apparatuses A. A transport apparatus AM is provided in the transfer chamber TF.

[0161] The buffer chamber B1, the buffer chamber B2, and the plurality of atmospheric pressure process devices A are each connected to the transfer chamber TF via a gate valve 20.

[0162] The transfer device AM can transfer a workpiece from any one of the buffer chamber B1, the buffer chamber B2, and the plurality of atmospheric pressure process devices A to any one of the others.

[0163] During operation of the manufacturing equipment, the buffer chambers B1 and B2 are controlled to reduced pressure or atmospheric pressure. The transfer chamber TF and the plurality of atmospheric pressure process devices A are controlled to atmospheric pressure. When controlled to atmospheric pressure, it is preferable to introduce an inert gas with a low dew point.

[0164] Clusters C3, C6, and C9 are connected to valves for introducing inert gas (IG) (see FIG. 5), making it possible to control the inert gas atmosphere.

[0165] The atmospheric pressure process equipment A of clusters C3, C6, and C9 can be applied with equipment for performing lithography processes. For example, when performing a photolithography process, a resin (photoresist) coating device, an exposure device, a developing device, a baking device, etc. can be applied. When performing a lithography process using nanoimprinting, a resin (UV curable resin, etc.) coating device, a nanoimprinting device, etc. can be applied. In addition, depending on the application, a cleaning device, a wet etching device, a coating device, a resist stripping device, etc. can also be applied to the atmospheric pressure process equipment A.

[0166] 7A shows an example in which the clusters C3, C6, and C9 each have six atmospheric pressure process devices A (atmospheric pressure process devices A1 to A6), but in order to improve throughput or prevent contamination, they may each have seven or more atmospheric pressure process devices A. Furthermore, each of the clusters C3, C6, and C9 may have a configuration in which multiple clusters are included.

[0167] <Clusters C4, C7> Figure 7B is a top view illustrating an apparatus configuration applicable to clusters C4 and C7. Clusters C4 and C7 are groups of apparatuses primarily used for etching organic compounds and removing resist masks. Clusters C4 and C7 each include a buffer chamber B1 corresponding to a load chamber, a buffer chamber B2 corresponding to an unload chamber, a transfer chamber TF, and multiple vacuum process devices V. A transport device AM is provided in the transfer chamber TF.

[0168] The buffer chamber B1, the buffer chamber B2, and the plurality of vacuum process devices V are each connected to the transfer chamber TF via a gate valve 20.

[0169] The transfer device AM can transfer a workpiece from any one of the buffer chamber B1, the buffer chamber B2, and the plurality of vacuum process devices V to any one of the others.

[0170] During operation of the manufacturing equipment, the buffer chambers B1 and B2 are controlled to reduced pressure or normal pressure. When controlled to normal pressure, it is preferable to introduce an inert gas with a low dew point. The transfer chamber TF and the multiple vacuum process devices V are controlled to reduced pressure.

[0171] A vacuum pump VP is connected to the clusters C4 and C7 (see FIG. 5), and a gate valve 20 is provided between each of the clusters C4 and C7 and the transfer chamber TF. Therefore, different processes can be performed in parallel in each vacuum process device V.

[0172] The vacuum process equipment V in the clusters C4 and C7 may be, for example, a dry etching equipment. Alternatively, a dry etching equipment equipped with an ashing function may be used. The resist mask can be removed by the ashing function.

[0173] Note that while Figure 7B shows an example in which clusters C4 and C7 have two vacuum process devices V (vacuum process devices V7 and V8), they may have three or more vacuum process devices V to improve throughput or prevent contamination.

[0174] <Cluster C13> Figure 8 is a top view illustrating an apparatus configuration applicable to cluster C13. Cluster C13 is a group of apparatuses primarily used to deposit organic compounds, conductive films, and protective films. Cluster C13 includes a buffer chamber B1 corresponding to a load chamber, a buffer chamber B2 corresponding to an unload chamber, a transfer chamber TF, and multiple vacuum process devices V. A transport device AM is provided in transfer chamber TF.

[0175] The buffer chamber B1, the buffer chamber B2, and the plurality of vacuum process devices V are each connected to the transfer chamber TF via a gate valve 20.

[0176] The transfer device AM can transfer a workpiece from any one of the buffer chamber B1, the buffer chamber B2, and the plurality of vacuum process devices V to any one of the others.

[0177] During operation of the manufacturing equipment, the buffer chamber B1 is controlled to a reduced pressure. The buffer chamber B2 is controlled to a reduced pressure or normal pressure. When controlled to normal pressure, it is preferable to introduce an inert gas with a low dew point. The transfer chamber TF and the multiple vacuum process devices V are also controlled to a reduced pressure.

[0178] A vacuum pump VP is connected to the cluster C13 (see FIG. 5), and a gate valve 20 is provided between the cluster C13 and the transfer chamber TF. Therefore, different processes can be performed in parallel in each vacuum process device V.

[0179] The vacuum process equipment V of the cluster C13 may be, for example, a deposition equipment such as a vapor deposition equipment, a sputtering equipment, a CVD equipment, or an ALD equipment.

[0180] Although Figure 8 shows an example in which cluster C13 has three vacuum process devices V (vacuum process devices V9 to V11), it may have four or more vacuum process devices V to improve throughput or prevent contamination.

[0181] By using the manufacturing apparatus configured as described above, a highly reliable light emitting device sealed with a protective film can be formed without being exposed to the atmosphere during the manufacturing process.

[0182] For example, after cleaning the workpiece in cluster C1, light-emitting devices emitting light of a first color are formed in clusters C2 to C4. Next, light-emitting devices emitting light of a second color are formed in clusters C5 to C7. Next, light-emitting devices emitting light of a third color and a protective layer are formed in clusters C8 to C10. Next, an organic insulating layer is filled in cluster C11. Next, unnecessary elements are removed in cluster C12. Successive processes can be performed in a reduced-pressure or atmosphere-controlled apparatus until a conductive film, a protective film, etc. are formed in cluster C13. Details of these processes will be described later.

[0183] In addition, when forming a light-emitting device that emits white light and a light-emitting device that emits light of the first to third colors using a colored layer such as a color filter, as shown in Figure 9, clusters C1, C8, C9, C10, C11, C12, and C13 are connected in order, and an organic compound layer that emits white light is formed in clusters C8 to C10.

[0184] <Configuration Example 3> Configuration Examples 1 and 2 show examples of an inline manufacturing apparatus in which each cluster is connected via a buffer chamber, but each cluster may have an independent load chamber LD and unload chamber ULD.

[0185] In such a configuration, the workpiece is sealed in a container with a controlled atmosphere so as not to be exposed to the atmosphere, and the container is moved between clusters.

[0186] 10A is a schematic diagram of configuration example 1 and configuration example 2, showing an example in which cluster C2 is connected to cluster C3 via buffer chamber B. After being processed in cluster C2, workpiece 60 is transported to cluster C3 via buffer chamber B.

[0187] 10B is a schematic diagram of configuration example 3, showing an example in which a load chamber LD and an unload chamber ULD are provided in each of clusters C2 and C3. The workpiece 60 is stored in a cassette CS in the unload chamber ULD of cluster C2, and the cassette CS is placed in a transfer container BX with a controlled atmosphere and moved between clusters. The cassette CS is then transferred to the load chamber LD of cluster C3. During this process, the cassette CS is transferred to the transfer container BX or cluster so as not to be exposed to the atmosphere.

[0188] 11A is a view for explaining the unloading of the cassette CS in the cluster C2. For clarity, the gate valve is omitted and the view is a see-through view of the chamber wall of the unload chamber ULD.

[0189] First, with all workpieces stored in cassettes CS installed in the unload chamber ULD, the atmosphere in the unload chamber ULD is replaced with an inert gas atmosphere. The interior of a transfer container BX mounted on a transfer vehicle VE is also replaced with an inert gas atmosphere. At this time, the unload chamber ULD and transfer container BX are preferably kept under positive pressure to prevent atmospheric air from entering. The transfer container BX may be evacuated to a negative pressure as long as it is configured to prevent atmospheric air from entering.

[0190] Next, the transfer port of the unload chamber ULD is docked with the transfer entrance of the transfer container BX, and the cassette CS is transferred from the unload chamber ULD to the transfer container BX by the transfer device 200. Then, the transfer entrance of the transfer container BX is closed to maintain the inside of the transfer container BX in an inert gas atmosphere, and the transfer container BX is moved to cluster C2 by the transfer vehicle VE.

[0191] 11B is a diagram illustrating the loading of the cassette CS into the cluster C3, in which the wall of the transfer container BX is shown as a see-through view for clarity.

[0192] First, the atmosphere in the load chamber LD is replaced with an inert gas atmosphere. Next, the loading entrance of the load chamber LD is docked with the loading entrance of the transfer container BX, and the transfer device 209 transfers the cassette CS from the transfer container BX to the load chamber LD. Then, the loading entrance of the load chamber UL is closed, and processing in cluster C2 begins.

[0193] 11C is a diagram illustrating a transport container BX and a transport vehicle VE. The transport vehicle VE has therein a controller 201, a power source 202, a battery 203, a gas cylinder 205 filled with an inert gas, and the like. The power source 202 is connected to the battery 203 and wheels 204. The transport vehicle VE can be moved manually or automatically under the control of the controller 201.

[0194] The transfer container BX has a gas inlet 210 and an outlet 211, and the inlet 210 is connected to a gas cylinder 205 via a valve 206. The outlet 211 is connected to a valve 207. One or both of the valves 206 and 207 are conductance valves, and can control the inside of the transfer container BX to a positive pressure with an inert gas. As the inert gas, nitrogen, argon, or the like is preferably used.

[0195] The transfer container BX also has a loading / unloading entrance 208 and a transfer device 209. The type of the loading / unloading entrance 208 is not limited, and for example, a door type, a shutter type, or the like can be used.

[0196] The transfer device 209 can transfer the cassette CS. In the explanation of Figures 11A and 11B, the transfer device 200 of the unload chamber ULD is used for unloading to the transfer container BX, and the transfer device 209 of the transfer container BX is used for loading into the load chamber LD, but either the transfer device 200 or the transfer device 209 may be used to perform these operations. Also, a configuration may be adopted in which one of the transfer device 200 and the transfer device 209 is not provided.

[0197] Although clusters C2 and C3 have been exemplified above, the configuration in which each cluster is independent can also be applied to other clusters.

[0198] 12A is a diagram illustrating an example of a vacuum process apparatus V, illustrating a film formation apparatus 30 in which a substrate (workpiece) is placed face down. For clarity, the diagram is a see-through view of the chamber wall, and the gate valve is omitted.

[0199] The film forming apparatus 30 includes a film forming material supply unit 31, a mask jig 32, and a substrate alignment unit 33. If the film forming apparatus 30 is an evaporation apparatus, the film forming material supply unit 31 is a location where an evaporation source is installed. If the film forming apparatus 30 is a sputtering apparatus, the film forming material supply unit 31 is a location where a target (cathode) is installed.

[0200] 12B , a substrate 61 can be carried in an inverted state into the substrate alignment section 33 by a transport device 71. A mask jig 32 is installed below the substrate alignment section 33. Circuits and the like are provided in advance on the surface of the substrate 61, and the substrate 61 is brought into close contact with the mask jig 32 to prevent film formation in unnecessary areas. At this time, the substrate alignment section 33 adjusts the positions of the portions of the substrate 61 that require film formation and the openings 35 of the mask jig 32.

[0201] Since a structure such as a light-emitting device is formed in the opening 35, the size of the opening 35 may be adjusted depending on the purpose. For example, the size of the opening 35 may be determined depending on the size of the exposure region described below.

[0202] 13A to 13C show an example of the number of display devices that can be produced per substrate (e.g., a silicon wafer) with a diameter φ of 12 inches. In FIGS. 13A to 13C, estimates are made assuming that external connection terminals are taken out from the backside using through-electrodes. This allows the display area to be widened. Pads may also be provided within the exposure area. In this case, although the display area becomes smaller, it has the effect of reducing the manufacturing cost related to the configuration for taking out the external connection terminals.

[0203] 13A to 13C each show an example in which the aspect ratio of the display area is 4:3.

[0204] FIG. 13A shows an example in which a sealing region is provided inside the exposure region (32 mm x 24 mm) of an exposure device. In the example of FIG. 13A, the width of the sealing region is 1.5 mm in the vertical direction and 2.0 mm in the horizontal direction. In this case, the size of the display region is 28 mm x 21 mm (aspect ratio 4:3), with a diagonal of approximately 1.38 inches. The number of display devices per substrate is 72. If the width of the sealing region is 2.0 mm in the vertical direction and 2.65 mm in the horizontal direction, the size of the display region is 26.7 mm x 20 mm (aspect ratio 4:3), with a diagonal of approximately 1.32 inches. If the width of the sealing region is 3.0 mm in the vertical direction and 4.0 mm in the horizontal direction, the size of the display region is 24 mm x 18 mm (aspect ratio 4:3), with a diagonal of approximately 1.18 inches. In both cases, the number of display devices that can be taken per substrate is 72.

[0205] Figures 13B and 13C show examples in which a sealing region is provided outside the exposure region (32 mm x 24 mm) of the exposure device. In this case, a gap is left for the sealing region during exposure. A marker region is provided inside the exposure region. Figure 13B shows an example in which the width of the marker region is 0.5 mm in the vertical direction and 0.7 mm in the horizontal direction, and the width of the sealing region is 2.0 mm. In this case, the size of the display region of the display device is approximately 1.51 inches diagonally. The number of display devices per substrate is 56. Note that if the width of the marker region is 1.0 mm in the vertical direction and 1.3 mm in the horizontal direction, the size of the display region is approximately 1.45 inches diagonally. Figure 13C shows an example in which the width of the marker region is 1.0 mm in the vertical direction and 1.3 mm in the horizontal direction, and the width of the sealing region is 3.0 mm. In this case, the size of the display region of the display device is approximately 1.45 inches diagonally. The number of display devices that can be obtained from one substrate is 49, which is approximately 13% less than the configuration of FIG. 13B.

[0206] 14A to 14F show examples of the configuration of a film formation apparatus that can be applied to the vacuum process apparatus V. Fig. 14A is a vacuum deposition apparatus that has a substrate holder 51 on which a substrate 61, which is the workpiece, is placed, a deposition source 52 such as a crucible, and a shutter 53. An exhaust port 54 is connected to a vacuum pump. The deposition source is heated under reduced pressure to evaporate or sublimate the film formation material, and the shutter is opened to form a film.

[0207] 14B shows a sputtering apparatus, which has an upper electrode 58 on which a substrate 61 is placed, a lower electrode 56 on which a target 57 is placed, and a shutter 53. The gas inlet 55 is connected to a sputtering gas supply source, and the exhaust port 54 is connected to a vacuum pump. For example, a sputtering phenomenon occurs when DC power or RF power is applied between the upper electrode 58 and the lower electrode 56 under reduced pressure including a noble gas, and a film of the material of the target 57 can be formed on the surface of the substrate 61 by opening the shutter.

[0208] 14C shows a plasma CVD apparatus having an upper electrode 58 having a gas inlet 55 and a shower plate 59, and a lower electrode 56 on which a substrate 61 is placed. The gas inlet 55 is connected to a source of raw material gas, and the exhaust port 54 is connected to a vacuum pump. The raw material gas is introduced under reduced pressure, and high-frequency power or the like is applied between the upper electrode 58 and the lower electrode 56 to decompose the raw material gas, thereby forming a film of the desired material on the surface of the substrate 61.

[0209] 14D shows a dry etching apparatus having an upper electrode 58 and a lower electrode 56 on which a substrate 61 is placed. The gas inlet 55 is connected to an etching gas supply source, and the exhaust port 54 is connected to a vacuum pump. The etching gas is introduced under reduced pressure, and high-frequency power or the like is applied between the upper electrode 58 and the lower electrode 56 to activate the etching gas, thereby etching an inorganic or organic film formed on the substrate 61. Ashing apparatuses and plasma processing apparatuses can also be configured in a similar manner.

[0210] 14E shows a waiting chamber having a substrate holder 62 for storing a plurality of substrates 61. The exhaust port 54 is connected to a vacuum pump, and the substrates 61 wait under reduced pressure. The number of substrates 61 that can be stored in the substrate holder 62 may be determined appropriately taking into consideration the time required for the preceding and following processes.

[0211] 14F shows an ALD apparatus, here showing a batch-type configuration. The ALD apparatus has a heater 64, a gas inlet 55 connected to a precursor supply source, etc., and an exhaust port 54 connected to a vacuum pump. A substrate holder 63 holds multiple substrates 61 and is placed on the heater 64. By alternately introducing precursors or oxidizing agents through the gas inlet 55 under reduced pressure, films are repeatedly formed on the substrates 61 in atomic layer units. In the case of a single-wafer type, a configuration without using the substrate holder 63 is sufficient. A thermal CVD apparatus can also be configured in a similar manner.

[0212] 14G shows a batch-type ALD apparatus with a different configuration from that shown in FIG. 14F. The basic configuration is similar, but the difference is that substrates 61 are arranged on a heater 64 and no substrate holder 63 is used. Alternatively, the gas inlet 55 may be provided directly above the substrate 61, and a rotation mechanism or the like may be provided on the heater 64 so that the substrate 61 passes directly below the gas inlet 55. The substrate 61 is swapped by the rotation mechanism of the heater 64, allowing multiple substrates to be processed.

[0213] 14G illustrates a configuration in which four substrates 61 are placed on the heater 64, but the number may be two or one. Also, the apparatus shown in FIGS. 14A to 14D may have a batch-type configuration in which the substrates 61 are placed side by side as shown in FIG.

[0214] This embodiment mode can be implemented in appropriate combination with any of the structures described in the other embodiment modes.

[0215] Embodiment 2 In this embodiment, a specific example of an organic EL element that can be manufactured using an apparatus for manufacturing a light-emitting device according to one embodiment of the present invention will be described.

[0216] In this specification, etc., a device fabricated using a metal mask or an FMM (fine metal mask, high-resolution metal mask) may be referred to as a device with an MM (metal mask) structure. In addition, in this specification, etc., a device fabricated without using a metal mask or an FMM may be referred to as a device with an MML (metal maskless) structure.

[0217] In this specification and the like, a structure in which different light-emitting layers are formed or different light-emitting layers are painted for each color light-emitting device (here, blue (B), green (G), and red (R)) may be referred to as an SBS (Side By Side) structure. In this specification and the like, a light-emitting device that can emit white light may be referred to as a white light-emitting device. In addition, a white light-emitting device can be combined with a colored layer (for example, a color filter) to realize a full-color display device.

[0218] Light-emitting devices can be broadly divided into single structures and tandem structures. A single-structure device preferably has one light-emitting unit between a pair of electrodes, and the light-emitting unit includes one or more light-emitting layers. When two light-emitting layers are used to obtain white light emission, the light-emitting layers may be selected so that the emission colors of the two light-emitting layers are complementary to each other. For example, by making the emission color of the first light-emitting layer and the emission color of the second light-emitting layer complementary to each other, a configuration in which the entire light-emitting device emits white light can be obtained. When three or more light-emitting layers are used to obtain white light emission, the emission colors of the three or more light-emitting layers may be combined to produce a configuration in which the entire light-emitting device emits white light.

[0219] A tandem-structure device preferably has two or more light-emitting units between a pair of electrodes, and each light-emitting unit preferably includes one or more light-emitting layers. To obtain white light emission, light from the light-emitting layers of the light-emitting units may be combined to obtain white light emission. The configuration for obtaining white light emission is the same as that of the single-structure device. In a tandem-structure device, it is preferable to provide an intermediate layer such as a charge-generating layer between the light-emitting units.

[0220] Furthermore, when comparing the above-described white light-emitting device (single structure or tandem structure) with a light-emitting device having an SBS structure, the light-emitting device having an SBS structure can reduce power consumption compared to the white light-emitting device. If it is desired to reduce power consumption, it is preferable to use a light-emitting device having an SBS structure. On the other hand, the manufacturing process of a white light-emitting device is simpler than that of a light-emitting device having an SBS structure, and therefore the manufacturing cost can be reduced or the manufacturing yield can be increased, making it preferable.

[0221] Note that a tandem-structure device may have a configuration (BB, GG, RR, etc.) in which light is emitted from multiple layers. A tandem structure, which allows light emission from multiple layers, requires a high voltage for light emission, but the current required to achieve the same emission intensity as a single structure is smaller. Therefore, a tandem structure can reduce the current stress per light-emitting unit and extend the device life.

[0222] 15 shows a schematic top view of a display device 100 manufactured using a manufacturing apparatus for a light-emitting device according to one embodiment of the present invention. The display device 100 includes a plurality of red light-emitting devices 110R, a plurality of green light-emitting devices 110G, and a plurality of blue light-emitting devices 110B. In FIG. 15, the light-emitting regions of the light-emitting devices are labeled with R, G, and B to easily distinguish the light-emitting devices from one another.

[0223] The light-emitting devices 110R, 110G, and 110B are arranged in a matrix. Fig. 15 shows a so-called stripe arrangement in which light-emitting devices of the same color are arranged in one direction. Note that the arrangement of the light-emitting devices is not limited to this, and arrangements such as a delta arrangement or a zigzag arrangement may also be used, or a pentile arrangement or other arrangement may also be used.

[0224] As the light-emitting device 110R, the light-emitting device 110G, and the light-emitting device 110B, it is preferable to use an EL element such as an OLED (organic light-emitting diode) or a QLED (quantum-dot light-emitting diode). Examples of the light-emitting material contained in the EL element include a fluorescent material, a phosphorescent material, an inorganic compound (such as a quantum dot material), and a material that exhibits thermally activated delayed fluorescence (thermally activated delayed fluorescence: TADF material).

[0225] FIG. 16A is a schematic cross-sectional view corresponding to the dashed dotted line A1-A2 in FIG.

[0226] 16A shows cross sections of light-emitting device 110R, light-emitting device 110G, and light-emitting device 110B. Light-emitting device 110R, light-emitting device 110G, and light-emitting device 110B are each provided on a pixel circuit, and each have a pixel electrode 111 and a common electrode 113.

[0227] The light-emitting device 110R has an EL layer 112R between the pixel electrode 111 and the common electrode 113. The EL layer 112R contains a light-emitting organic compound that emits light having a peak in at least the red wavelength range. The EL layer 112G of the light-emitting device 110G contains a light-emitting organic compound that emits light having a peak in at least the green wavelength range. The EL layer 112B of the light-emitting device 110B contains a light-emitting organic compound that emits light having a peak in at least the blue wavelength range. The EL layers 112R, 112G, and 112B each have an SBS structure that emits light of a different color.

[0228] The EL layer 112R, the EL layer 112G, and the EL layer 112B may each have one or more of an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer in addition to a layer containing a light-emitting organic compound (light-emitting layer).

[0229] The pixel electrode 111 is provided for each light-emitting device. The common electrode 113 is provided as a continuous layer common to each light-emitting device. A conductive film that is transparent to visible light is used for either the pixel electrode 111 or the common electrode 113, and a conductive film that is reflective is used for the other. By making the pixel electrode 111 transparent and the common electrode 113 reflective, a bottom-emission display device can be obtained. Conversely, by making the pixel electrode 111 reflective and the common electrode 113 transparent, a top-emission display device can be obtained. Note that by making both the pixel electrode 111 and the common electrode 113 transparent, a dual-emission display device can also be obtained. In this embodiment, an example of manufacturing a top-emission display device will be described.

[0230] The EL layer 112R, the EL layer 112G, and the EL layer 112B each have a region in contact with the upper surface of the pixel electrode 111.

[0231] As shown in Figure 16A, a gap is provided between the two EL layers between light-emitting devices of different colors. In this manner, it is preferable that the EL layers 112R, 112G, and 112G are arranged so that they do not contact each other. This effectively prevents current from flowing through two adjacent EL layers, which would otherwise cause unintended light emission. This improves contrast and allows for the realization of a display device with high display quality.

[0232] Furthermore, a protective layer 121 is provided on the common electrode 113 to cover the light-emitting devices 110R, 110G, and 110B. The protective layer 121 has a function of preventing impurities from diffusing from above into each light-emitting device. Alternatively, the protective layer 121 has a function of capturing (also called gettering) impurities (typically impurities such as water and hydrogen) that may enter each light-emitting device.

[0233] The protective layer 121 may have, for example, a single-layer structure or a multilayer structure including at least an inorganic insulating film. Examples of the inorganic insulating film include oxide films or nitride films such as a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, a silicon nitride film, an aluminum oxide film, an aluminum oxynitride film, and a hafnium oxide film. Alternatively, the protective layer 121 may be made of a semiconductor material such as indium gallium oxide or indium gallium zinc oxide.

[0234] The pixel electrode 111 is electrically connected to one of the source and drain of the transistor 116. The transistor 116 can be, for example, a transistor having a metal oxide in a channel formation region (hereinafter referred to as an OS transistor). The OS transistor has higher mobility and superior electrical characteristics than a transistor using amorphous silicon. Furthermore, the OS transistor does not require the crystallization process that is required in the manufacturing process of polycrystalline silicon, and can be formed in a wiring process or the like. Therefore, the transistor 116 can be formed on a transistor 115 having silicon in a channel formation region formed on the substrate 61 (hereinafter referred to as a Si transistor) without using a bonding process or the like.

[0235] Here, the transistor 116 is a transistor that forms a pixel circuit. The transistor 115 is a transistor that forms a driver circuit of the pixel circuit. That is, since the pixel circuit can be formed on the driver circuit, a display device with a narrow frame can be formed.

[0236] As a semiconductor material for an OS transistor, a metal oxide having an energy gap of 2 eV or more, preferably 2.5 eV or more, more preferably 3 eV or more can be used.

[0237] Because the energy gap of a semiconductor layer is large, an OS transistor exhibits extremely low off-state current of several yA / μm (current value per μm of channel width). The off-state current of an OS transistor per μm of channel width at room temperature is 1 aA (1×10 −１８ A) Below, 1zA (1×10 −２１ A) or less, or 1 yA (1 x 10 −２４Note that the off-state current of a Si transistor per 1 μm of channel width at room temperature can be 1 fA (1×10 −１５ A) More than 1pA (1×10 −１２ Therefore, it can be said that the off-state current of an OS transistor is about 10 orders of magnitude lower than that of a Si transistor.

[0238] Furthermore, OS transistors have characteristics different from Si transistors, such as the absence of impact ionization, avalanche breakdown, and short-channel effects, and can form highly reliable circuits with high breakdown voltage. Furthermore, OS transistors are less likely to suffer from variations in electrical characteristics due to non-uniformity of crystallinity, which is a problem in Si transistors.

[0239] A semiconductor layer included in an OS transistor can be, for example, a film represented by an In-M-Zn-based oxide containing indium, zinc, and M (one or more metals such as aluminum, titanium, gallium, germanium, yttrium, zirconium, lanthanum, cerium, tin, neodymium, or hafnium). The In-M-Zn-based oxide can typically be formed by a sputtering method. Alternatively, it may be formed by an ALD method.

[0240] For example, an oxide containing indium (In), gallium (Ga), and zinc (Zn) (IGZO) can be used as the In-M-Zn oxide. Alternatively, an oxide containing indium (In), aluminum (Al), and zinc (Zn) (IAZO) can be used. Alternatively, an oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn) (IAGZO) can be used.

[0241] The atomic ratio of the metal elements in a sputtering target used to form an In-M-Zn-based oxide by sputtering preferably satisfies In≧M and Zn≧M. The atomic ratio of the metal elements in such a sputtering target is preferably In:M:Zn=1:1:1, In:M:Zn=1:1:1.2, In:M:Zn=1:3:2, In:M:Zn=3:1:2, In:M:Zn=4:2:3, In:M:Zn=4:2:4.1, In:M:Zn=5:1:6, In:M:Zn=5:1:7, In:M:Zn=5:1:8, etc., or a composition close to these. The atomic ratio of the semiconductor layer to be formed each includes a variation of plus or minus 40% of the atomic ratio of the metal elements contained in the above-mentioned sputtering target.

[0242] For the semiconductor layer, an oxide semiconductor with a low carrier density is used. For example, the semiconductor layer has a carrier density of 1×10 １７ / cm ３ Below 1 × 10, preferably １５ / cm ３ More preferably, 1×10 １３ / cm ３ Less than 1×10, more preferably 1×10 １１ / cm ３ More preferably, 1×10 １０ / cm ３ is less than 1×10 −９ / cm ３ An oxide semiconductor having a carrier density above or equal to this can be used. Such an oxide semiconductor is called a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor. The oxide semiconductor has a low density of defect states and stable characteristics.

[0243] Note that the present invention is not limited to these, and an appropriate composition may be used depending on the required semiconductor characteristics and electrical characteristics (field-effect mobility, threshold voltage, etc.) of the transistor. In order to obtain the required semiconductor characteristics of the transistor, it is preferable to appropriately set the carrier density, impurity concentration, defect density, atomic ratio of metal element to oxygen, interatomic distance, density, and the like of the semiconductor layer.

[0244] The display device shown in FIG. 16A has an OS transistor and a light-emitting device with a metal maskless (MML) structure. This structure can significantly reduce leakage current that may flow through the transistor and leakage current that may flow between adjacent light-emitting elements (also referred to as lateral leakage current or side leakage current). Furthermore, when an image is displayed on the display device, the viewer can observe one or more of image clarity, image sharpness, and a high contrast ratio. By using a structure in which the leakage current that may flow through the transistor and the lateral leakage current between light-emitting elements are extremely low, a display with extremely low light leakage during black display (also referred to as true black display) can be achieved.

[0245] 16A illustrates an example in which the light-emitting layers of each light-emitting device are different for R, G, and B, but is not limited to this. For example, as shown in FIG. 16B , a color system may be used in which an EL layer 112W that emits white light is provided, and colored layers 114R (red), 114G (green), and 114B are provided so as to overlap the EL layer 112W, thereby forming light-emitting devices 110R, 110G, and 110B.

[0246] The EL layer 112W may have a tandem structure in which EL layers that emit R, G, and B light are connected in series, for example. Alternatively, a structure in which light-emitting layers that emit R, G, and B light may be connected in series may be used. As the colored layers 114R, 114G, and 114B, for example, red, green, and blue color filters may be used.

[0247] Alternatively, as shown in FIG. 16C, a pixel circuit may be configured with a Si transistor (transistor 117) included in the substrate 61, and one of the source or drain of the transistor 117 and the pixel electrode 111 may be electrically connected.

[0248] <Manufacturing Method Example> An example of a manufacturing method for a light-emitting device that can be manufactured using a manufacturing apparatus according to one embodiment of the present invention will be described below. Here, the light-emitting device included in the display device 100 shown in the above configuration example will be described as an example.

[0249] 17A to 20E are schematic cross-sectional views illustrating steps in a method for manufacturing a light-emitting device, which will be described below. Note that the transistor 116, which is a component of the pixel circuit shown in FIG. 16A, and the transistor 115, which is a component of the driver circuit, are omitted in FIG.

[0250] Thin films (insulating films, semiconductor films, conductive films, etc.) constituting a display device can be formed by a sputtering method, a chemical vapor deposition (CVD) method, a vacuum evaporation method, an atomic layer deposition (ALD) method, or the like. CVD methods include a plasma enhanced chemical vapor deposition (PECVD) method and a thermal CVD method. One type of thermal CVD method is a metal organic chemical vapor deposition (MOCVD) method. A manufacturing apparatus according to one embodiment of the present invention can include an apparatus for forming a thin film by the above method.

[0251] Furthermore, methods such as spin coating, dipping, spray coating, inkjet printing, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, and knife coating can be used to form thin films (insulating films, semiconductor films, conductive films, etc.) that constitute display devices and to apply resins and the like used in lithography processes. A manufacturing apparatus according to one embodiment of the present invention can include a device for forming thin films by the above-described methods. Furthermore, a manufacturing apparatus according to one embodiment of the present invention can include a device for applying resins by the above-described methods.

[0252] Furthermore, when processing the thin film that constitutes the display device, a photolithography method or the like can be used. Alternatively, the thin film may be processed using a nanoimprint method. Furthermore, a method of directly forming island-shaped thin films by a film formation method using a masking mask may be used in combination.

[0253] There are two typical methods for processing thin films using photolithography. One is a method in which a resist mask is formed on the thin film to be processed, the thin film is processed by etching or the like, and the resist mask is then removed. The other is a method in which a photosensitive thin film is formed, and then the thin film is exposed to light and developed to be processed into the desired shape.

[0254] In photolithography, the light used for exposure may be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these. Other light sources that can be used include ultraviolet light, KrF laser light, ArF laser light, etc. Exposure may also be performed by immersion exposure technology. Extreme ultraviolet (EUV) light or X-rays may also be used as the light used for exposure. An electron beam may also be used instead of the light used for exposure. Extreme ultraviolet light, X-rays, or an electron beam are preferred because they enable extremely fine processing. When exposure is performed by scanning a beam such as an electron beam, a photomask is not required.

[0255] The thin film can be etched by dry etching, wet etching, etc. The manufacturing apparatus according to one embodiment of the present invention can include an apparatus for processing the thin film by the above-described method.

[0256] <Preparation of Substrate 61> As the substrate 61, a substrate having heat resistance at least sufficient to withstand subsequent heat treatment can be used. When an insulating substrate is used as the substrate 61, a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, an organic resin substrate, or the like can be used. Also, semiconductor substrates such as single crystal semiconductor substrates made of silicon or silicon carbide, polycrystalline semiconductor substrates, compound semiconductor substrates such as silicon germanium, and SOI substrates can be used. The shape of the substrate is not limited to a wafer, and a rectangular substrate can also be used.

[0257] In particular, it is preferable to use a substrate having a semiconductor circuit including semiconductor elements such as Si transistors formed on the semiconductor substrate or insulating substrate as the substrate 61. The semiconductor circuit preferably comprises, for example, a pixel circuit, a gate line driving circuit (gate driver), a source line driving circuit (source driver), etc. In addition to the above, an arithmetic circuit, a memory circuit, etc. may also be configured.

[0258] <Formation of pixel circuits and pixel electrodes 111> Next, a plurality of pixel circuits are formed on the substrate 61, and a pixel electrode 111 is formed in each pixel circuit (see FIG. 17A). First, a conductive film that will become the pixel electrode 111 is formed, a resist mask is formed by photolithography, and unnecessary portions of the conductive film are removed by etching. Then, the resist mask is removed, thereby forming the pixel electrode 111.

[0259] It is preferable to use a material (such as silver or aluminum) that has as high a reflectance as possible over the entire wavelength range of visible light as the pixel electrode 111. The pixel electrode 111 formed from such a material can be said to be an electrode having light reflectivity. This not only increases the light extraction efficiency of the light-emitting device but also improves color reproducibility.

[0260] Furthermore, it is preferable that the light-emitting device has a micro-optical resonator (microcavity) structure. Therefore, it is preferable that one of the pair of electrodes of the light-emitting device has an electrode that is transparent and reflective to visible light (semi-transmissive / semi-reflective electrode), and the other has an electrode that is reflective to visible light (reflective electrode). By having the light-emitting device have a microcavity structure, the light emitted from the light-emitting layer can be resonated between the two electrodes, thereby intensifying the light emitted from the light-emitting device. Therefore, the pixel electrode 111 may have a laminated structure of the above-mentioned highly reflective material and a transparent conductive film (such as indium tin oxide).

[0261] Subsequently, a baking process is performed to remove moisture remaining on the surface of the pixel electrode 111. The baking process can be performed using a vacuum baking device or a film forming device. The vacuum baking condition is preferably 100° C. or higher.

[0262] Next, the pixel electrode 111 is subjected to a surface treatment. For example, a plasma treatment device is used to perform a surface treatment using a CF ４ Plasma is generated using a fluorine-based gas such as fluorine, and is irradiated onto the surface of the pixel electrode 111. This plasma treatment can improve adhesion between the pixel electrode 111 and the EL film that will be formed in the next process, and can suppress peeling defects.

[0263] <Formation of EL Film 112Rf> Subsequently, an EL film 112Rf, which will later become the EL layer 112R, is formed on the pixel electrode 111.

[0264] The EL film 112Rf includes a film containing at least a red-light-emitting organic compound. Alternatively, the EL film 112Rf may have a laminated structure including an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer. The EL film 112Rf can be formed by, for example, a vapor deposition method or a sputtering method. However, the method is not limited to these, and the above-described film formation methods can be used as appropriate.

[0265] <Formation of Protective Film 125Rf1 and Protective Film 125Rf2> Subsequently, the protective film 125Rf1 and the protective film 125Rf2, which will later become the protective layer 125R1 and the protective layer 125R2, are formed on the EL film 112Rf (see FIG. 17B).

[0266] The protective layers 125R1 and 125R2 are temporary protective layers used to prevent deterioration and process the EL layer 112R during the manufacturing process of the light-emitting device, and are also called mask layers. The protective films 125Rf1 and 125Rf2 are preferably formed using a film formation method that provides high barrier properties against moisture and other elements and is less likely to damage organic compounds during film formation. They are also preferably formed from materials that allow the use of etchants that are less likely to damage organic compounds during the etching process. The protective films 125Rf1 and 125Rf2 can be inorganic films such as metal films, alloy films, metal oxide films, semiconductor films, and inorganic insulating films.

[0267] For example, it is preferable to use a metal such as tungsten, an inorganic insulating film such as aluminum oxide, or a laminated film of these for the protective film 125Rf1 and the protective film 125Rf2. Here, an example is described in which aluminum oxide is used for the protective film 125Rf1 and tungsten is used for the protective film 125Rf2. By laminating different types of films, a protective film with high resistance to the manufacturing environment can be obtained. Alternatively, the protective film 125Rf1 may be a laminated film of an aluminum oxide film formed by ALD and a silicon nitride film formed by sputtering.

[0268] The film formation temperature when forming the protective films 125Rf1 and 125Rf2 by the ALD method and the sputtering method is preferably from room temperature to 140° C., preferably from room temperature to 120° C., and more preferably from room temperature to 100° C., because this reduces the impact on the EL layer. Furthermore, when the protective layers 125R1 and 125R2 are laminated films, it is preferable to reduce the stress of the laminated film. Specifically, by setting the stress of each layer constituting the laminated film to -500 MPa to +500 MPa, more preferably -200 MPa to +200 MPa, process problems such as film peeling and delamination can be suppressed.

[0269] <Formation of Resist Mask 143a> Subsequently, a resist mask 143a is formed on the pixel electrode 111 corresponding to the light-emitting device 110R (see FIG. 17C). The resist mask 143a can be formed by a lithography process.

[0270] <Formation of Protective Layers 125R1 and 125R2> Next, the protective films 125Rf1 and 125Rf2 are etched using the resist mask 143a to form the protective layers 125R1 and 125R2 in an island shape. Dry etching or wet etching can be used for the etching process. The resist mask 143a is then removed by ashing or using a resist remover (see FIG. 17D ).

[0271] <Formation of EL Layer 112R> Next, the EL film 112Rf is etched using the protective layers 125R1 and 125R2 as a mask to form the EL layer 112R in an island shape (see FIG. 17E). Dry etching is preferably used for the etching process.

[0272] <Formation of EL film 112Gf> Next, a baking process is performed to remove moisture remaining on the surface of the pixel electrode 111. The baking process can be performed using a vacuum baking device or a film forming device. Here, the vacuum baking conditions are 100° C. or less, preferably 90° C. or less, and more preferably 80° C. or less so as not to damage the EL layer 112R. When vacuum baking is performed at 80° C., heating for 30 minutes or more can remove the moisture (H ２ It has been found from the results of measurements by thermal desorption spectroscopy (TDS) that the amount of oxygen in the atmosphere is sufficiently reduced.

[0273] Next, the exposed pixel electrodes 111 are subjected to a surface treatment. For example, a plasma treatment device is used to perform a surface treatment using a CF ４ A plasma is generated using a fluorine-based gas such as the above and is irradiated onto the surface of the pixel electrode 111. Then, an EL film 112Gf that will become the EL layer 112G is formed on the pixel electrode 111.

[0274] The EL film 112Gf includes a film containing at least a green light-emitting organic compound. Alternatively, the EL film 112Gf may have a laminated structure including an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer.

[0275] <Formation of Protective Film 125Gf1 and Protective Film 125Gf2> Next, protective films 125Gf1 and 125Gf2, which will later become the protective layer 125G, are formed on the EL film 112Gf (see FIG. 18A). The protective film 125Gf1 can be formed of the same material as the protective film 125Rf1. The protective film 125Gf2 can be formed of the same material as the protective film 125Rf2.

[0276] <Formation of Resist Mask 143b> Next, a resist mask 143b is formed on the pixel electrode 111 corresponding to the light-emitting device 110G (see FIG. 18B). The resist mask 143b can be formed by a lithography process.

[0277] <Formation of Protective Layer 125G1 and Protective Layer 125G2> Next, the protective film 125Gf1 and the protective film 125Gf2 are etched using the resist mask 143b to form the protective layer 125G1 and the protective layer 125G2 in an island shape. Dry etching or wet etching can be used for the etching process. The resist mask 143b is then removed by ashing or using a resist remover.

[0278] <Formation of EL Layer 112G> Next, the EL film 112Gf is etched using the protective layers 125G1 and 125G2 as a mask to form the EL layer 112G in an island shape (see FIG. 18C). Dry etching is preferably used for the etching process.

[0279] <Formation of EL film 112Bf> Next, a baking process is performed to remove moisture remaining on the surface of the pixel electrode 111. The baking process can be performed using a vacuum baking apparatus or a film forming apparatus. Here, the vacuum baking conditions are 100° C. or less, preferably 90° C. or less, and more preferably 80° C. or less, so as not to damage the EL layers 112R and 112G.

[0280] Next, the exposed pixel electrodes 111 are subjected to a surface treatment. For example, a plasma treatment device is used to perform a surface treatment using a CF ４ A plasma is generated using a fluorine-based gas such as fluorine-based gas, and is irradiated onto the surface of the pixel electrode 111. Then, an EL film 112Bf that will become the EL layer 112B is formed on the pixel electrode 111.

[0281] The EL film 112Bf includes a film containing at least a blue light-emitting organic compound. Alternatively, the EL film 112Bf may have a stacked structure of an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer.

[0282] <Formation of Protective Film 125Bf> Next, protective films 125Bf1 and 125Bf2, which will later become protective layers 125B1 and 125B2, are formed on the EL film 112Bf (see FIG. 18D). The protective film 125Bf1 can be formed of the same material as the protective film 125Rf1. The protective film 125Bf2 can be formed of the same material as the protective film 125Rf2.

[0283] <Formation of Resist Mask 143c> Subsequently, a resist mask 143c is formed on the pixel electrode 111 corresponding to the light-emitting device 110B (see FIG. 18E). The resist mask 143c can be formed by a lithography process.

[0284] <Formation of Protective Layer 125B1 and Protective Layer 125B2> Next, the protective film 125Bf1 and the protective film 125Bf2 are etched using the resist mask 143c to form the protective layer 125B1 and the protective layer 125B2 in an island shape. Dry etching or wet etching can be used for the etching process. The resist mask 143c is then removed by ashing or using a resist remover.

[0285] <Formation of EL Layer 112B> Next, the EL film 112Bf is etched using the protective layers 125B1 and 125B2 as a mask to form the EL layer 112B in an island shape (see FIG. 19A). Dry etching is preferably used for the etching process.

[0286] <Removal of Protective Layers 125R2, 125G2, and 125B2> Next, the protective layers 125R2, 125G2, and 125B2 are removed (see FIG. 19B ). Dry etching or wet etching is preferably used to remove the protective layers 125R2, 125G2, and 125B2. Furthermore, the side surfaces of the EL layers 112R, 112G, and 112B may be cleaned using a plasma processing device or the like.

[0287] <Formation of Barrier Film 126f> Next, a barrier film 126f, which will later become the barrier layer 126, is formed to cover the side surfaces of the EL layer 112R, the EL layer 112G, and the EL layer 112B, as well as the protective layer 125R1, the protective layer 125G1, and the protective layer 125B1 (see FIG. 19C ). Providing the barrier layer 126 seals the side surfaces of the EL layer 112R, the EL layer 112G, and the EL layer 112B, thereby improving the reliability of the light-emitting device. The barrier film 126f can be formed by a CVD method, an ALD method, a sputtering method, or the like using an inorganic film similar to the protective film 125Rf1.

[0288] <Formation of Insulating Layer 127> Next, the insulating layer 127 is formed so as to fill the gaps between the pixel electrodes and the EL layers. By forming the insulating layer 127, it is possible to eliminate steps and prevent the conductive film (common electrode) formed on the EL layer in a later process from being broken. Furthermore, by covering the vicinity of the side surface of the EL layer with the insulating layer 127, it is possible to prevent impurities from penetrating the EL layer and peeling of the EL layer. Note that the insulating layer 127 can also be referred to as an interlayer insulating layer provided between the conductive film and the pixel electrode 111.

[0289] An organic insulating layer is preferably used for the insulating layer 127. For example, the insulating layer 127 can be made of acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenolic resin, or precursors of these resins. Alternatively, the insulating layer 127 can be made of organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin. Alternatively, the insulating layer 127 can be made of a photosensitive resin. The photosensitive resin can be either a positive-tone or negative-tone material and can be formed using a process similar to a lithography process, for example.

[0290] Here, an example will be described in which a positive photosensitive resin is used for the insulating layer 127. First, the insulating layer 127 is formed on the barrier film 126f using the above-mentioned resin application device (see FIG. 19D), and pre-baking is performed using a baking device.

[0291] Next, an exposure device is used to irradiate ultraviolet light UV through a photomask 250 onto areas where the insulating layer 127 is not required (see FIG. 19E).Then, the unnecessary areas of the insulating layer 127 are removed in a development process (see FIG. 20A).

[0292] Next, post-baking is performed using a baking device. Depending on the material used, ultraviolet light may be irradiated before post-baking to promote the curing reaction of the resin.

[0293] The post-baking reflows the insulating layer 127, and the upper surface of the insulating layer 127 becomes curved (see FIG. 20B). By making the upper surface of the insulating layer 127 curved, it is possible to improve the coverage of the conductive film (common electrode) formed in a later process and prevent discontinuities. Note that the upper surface of the insulating layer 127 may have a curved shape after the development process.

[0294] <Formation of Barrier Layer 130> Next, the barrier film 126f and the protective layers 125R1, 125G1, and 125B1 are removed by dry etching using the insulating layer 127 as a mask, to form the barrier layer 130 (see FIG. 20C ). In this process, the upper surfaces of the EL layers 112R, 112G, and 112B are exposed.

[0295] In this step, a portion of each of the protective layers 125R1, 125G1, and 125B1 remains between the barrier layer 130 and the EL layer 112R, the EL layer 112G, and the EL layer 112B, respectively, thereby effectively suppressing the diffusion of impurities from the insulating layer 127 into the EL layer 112R, the EL layer 112G, and the EL layer 112B.

[0296] Although an example is shown here in which the barrier film 126f and the protective layers 125R1, 125G1, and 125B1 are removed in the same process, the process for removing the barrier film 126f and the process for removing the protective layers 125R1, 125G1, and 125B1 may be different. For example, one may be removed by dry etching and the other by wet etching. Alternatively, after removing one, the end of the insulating layer 127 may be recessed by an ashing process, and then the other may be removed. This process can make it less likely that a cavity will form under the insulating layer 127.

[0297] <Common Electrode Formation> Next, a conductive film (cathode) that will become the common electrode 113 of the light-emitting device is formed on the EL layers 112R, 112G, and 112B exposed in the previous process, and on the insulating layer 127 (see FIG. 20D ). The common electrode 113 can be a single film or a laminated film of either a thin metal film (e.g., an alloy of silver and magnesium) that transmits light emitted from the light-emitting layers or a light-transmitting conductive film (e.g., indium tin oxide or an oxide containing one or more of indium, gallium, zinc, etc.). The common electrode 113 made of such a film can be referred to as an electrode having optical transparency. The process of forming the conductive layer that will become the common electrode 113 can be performed using a vapor deposition apparatus and / or a sputtering apparatus.

[0298] In order to improve reliability, a layer having any of the functions of an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer may be provided as a common layer on the EL layers 112R, 112G, and 112B before the formation of the common electrode 113.

[0299] By providing a light-reflective electrode as the pixel electrode 111 and a light-transmitting electrode as the common electrode 113, light emitted from the light-emitting layer can be emitted to the outside through the common electrode 113. In other words, a top-emission light-emitting device is formed.

[0300] <Protective Layer Formation> Subsequently, the protective layer 121 is formed on the common electrode 113 (see FIG. 20E). In the step of forming the protective layer 121, a sputtering device, a CVD device, an ALD device, or the like can be used.

[0301] The above is an example of a method for manufacturing a light-emitting device that can be manufactured using the manufacturing apparatus of one embodiment of the present invention. Note that, as described in the description of FIG. 20C , when the barrier film 126f is removed, and then the end portions of the insulating layer 127 are recessed by an ashing process and the protective layers 125R1, 125G1, and 125B1 are removed, the configuration shown in FIG. 21A is obtained. Note that, as shown in FIG. 21B , the end portions of the protective layers 125R1, 125G1, and 125B1 may have steps.

[0302] The shape of each layer in the cross section of the light-emitting device can be observed using a scanning electron microscope (SEM), a transmission electron microscope (TEM), etc. However, if the barrier layer 126 and the protective layers 125R1, 125G1, and 125B1 are made of the same material, the interfaces may not be clearly observed, and the shape shown in FIG.

[0303] Note that in a light-emitting device that can be manufactured using the manufacturing apparatus of one embodiment of the present invention, the pixel electrode 111 and the EL layer may have the same area as each other, as shown in Fig. 21D . Alternatively, the EL layer may have a smaller area than the pixel electrode 111, as shown in Fig. 21E .

[0304] 22 shows an example of a manufacturing apparatus that can be used for the above-described manufacturing steps from the formation of the EL film 112Rf to the formation of the protective layer 121. The basic configuration of the manufacturing apparatus shown in FIG. 22 is the same as that of the manufacturing apparatus shown in FIG.

[0305] Clusters C1 to C13 will be specifically described below. Fig. 22 is a perspective view showing the entire manufacturing apparatus, and utilities, gate valves, etc. are not shown.

[0306] <Cluster C1> In the cluster C1, a cleaning process is performed before the EL film 112Rf is formed. The cluster C1 has a cleaning device and a baking device.

[0307] <Cluster C2> Cluster C2 is a step of forming the EL film 112Rf. Cluster C2 includes a surface treatment device for performing surface treatment on the base (pixel electrode 111) on which the EL film 112Rf is formed, a vapor deposition device for forming the EL film 112Rf (one or more organic compound layers such as a light-emitting layer (R), an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer), and a film formation device (e.g., a sputtering device, an ALD device, etc.) for forming the protective film 125Rf1 and the protective film 125Rf2.

[0308] <Cluster C3> Cluster C3 performs a lithography process to form a resist mask 143a. Cluster C3 includes a resin (photoresist) coating device, a pre-bake device, an exposure device, a development device, and a post-bake device. Alternatively, cluster C3 may include a nanoimprint device.

[0309] Cluster C4 includes a first dry etching apparatus for etching the protective films 125Rf1 and 125Rf2, an EL film 112Rf, and a second dry etching apparatus for forming the EL layer 112R and ashing the resist mask 143a.

[0310] Cluster C5 is a cluster where the EL film 112Gf is formed. Cluster C5 includes a surface treatment device for performing surface treatment on the base (pixel electrode 111) on which the EL film 112Gf is formed, a vapor deposition device for forming the EL film 112Gf (one or more organic compound layers such as a light-emitting layer (G), an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer), and a film formation device (e.g., a sputtering device, an ALD device, etc.) for forming the protective film 125Gf1 and the protective film 125Gf2.

[0311] <Cluster C6> Cluster C6 performs a lithography process to form a resist mask 143b. Cluster C6 includes a resin (photoresist) coating device, a pre-bake device, an exposure device, a development device, and a post-bake device. Alternatively, cluster C6 may include a nanoimprint device.

[0312] Cluster C7 includes a first dry etching apparatus for etching the protective films 125Gf1 and 125Gf2, an EL film 112Gf, and a second dry etching apparatus for forming the EL layer 112G and ashing the resist mask 143b.

[0313] <Cluster C8> Cluster C8 is a step of forming the EL film 112Bf. Cluster C8 includes a surface treatment device for performing surface treatment on the base (pixel electrode 111) on which the EL film 112Bf is formed, a vapor deposition device for forming the EL film 112Bf (one or more organic compound layers such as a light-emitting layer (B), an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer), and a film formation device (e.g., a sputtering device, an ALD device, etc.) for forming the protective film 125Bf1 and the protective film 125Bf2.

[0314] <Cluster C9> Cluster C9 performs a lithography process to form a resist mask 143c. Cluster C9 includes a resin (photoresist) coating device, a pre-bake device, an exposure device, a development device, and a post-bake device. Alternatively, cluster C9 may include a nanoimprint device.

[0315] <Cluster C10> In cluster C10, etching of the protective films 125Bf1 and 125Bf2, etching of the EL film 112Bf, removal of the resist mask 143c, removal of the protective films 125Rf2, 125Gf2, and 125Bf2, surface cleaning, and formation of the barrier layer 126 are performed.

[0316] Cluster C10 includes a first dry etching apparatus that etches the protective film 125Gf1 and the protective film 125Gf2, a second dry etching apparatus that forms the EL layer 112G and ashes the resist mask 143c, a third dry etching apparatus that removes the protective film 125Rf2, the protective film 125Gf2, and the protective film 125Bf2, a plasma processing apparatus that cleans the side surfaces of the EL layer 112R, the EL layer 112G, and the EL layer 112B, and a film formation apparatus (e.g., a sputtering apparatus, an ALD apparatus, etc.) that forms the barrier film 126f.

[0317] <Cluster C11> In cluster C11, the insulating layer 127 is formed. Cluster C11 may include devices used in the lithography process, such as a resin application device, a pre-bake device, a first exposure device, a development device, and a post-bake device. Cluster C11 may also include a second exposure device.

[0318] <Cluster C12> In cluster C12, the barrier film 126f and the protective films 125Rf1, 125Gf1, and 125Bf1 are etched. Cluster C12 has a wet etching device that etches the barrier film 126f and the protective films 125Rf1, 125Gf1, and 125Bf1.

[0319] <Cluster C13> In cluster C13, an organic compound layer, a common electrode 113, and a protective layer 121 are formed. Cluster C13 includes a vapor deposition apparatus for forming one or more organic compound layers such as an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer, a film formation apparatus (for example, a sputtering apparatus, an ALD apparatus, etc.) for forming the common electrode 113, and a film formation apparatus (for example, a sputtering apparatus, an ALD apparatus, etc.) for forming the protective layer 121.

[0320] Table 1 summarizes the steps and processing equipment using the manufacturing apparatus shown in FIG. 22, and the elements corresponding to the manufacturing method shown in FIGS. 17A to 20E.

[0321]

[0322] The manufacturing apparatus according to one embodiment of the present invention has a function of automatically carrying out steps No. 1 to No. 53 shown in Table 1.

[0323] This embodiment mode can be implemented in appropriate combination with any of the structures described in the other embodiment modes.

[0324] A: atmospheric pressure process apparatus, A1: atmospheric pressure process apparatus, A2: atmospheric pressure process apparatus, A3: atmospheric pressure process apparatus, A4: atmospheric pressure process apparatus, A5: atmospheric pressure process apparatus, A6: atmospheric pressure process apparatus, A7: atmospheric pressure process apparatus, A8: atmospheric pressure process apparatus, AM: transport device, AMa: transport device, AMb: transport device, AMc: transport device, AMd: transport device, AMe: transport device, AMf: transport device, AMg: transport device, AMh: transport device, AMi: transport device, AMj: transport device, B: buffer chamber, B1: buffer chamber, B2: buffer chamber, Ba: buffer chamber, Bb: buffer chamber, Bc: buffer chamber, Bd: buffer chamber, Be: buffer chamber, Bf: buffer chamber, C1: cluster, C2: cluster, C3: cluster, C4: cluster, C5: cluster, C6: cluster, C7: cluster, C8: cluster, C9: cluster, C10: cluster, C11: cluster, C12: cluster, C12a: cluster, C12b: cluster, C12c: cluster, C12d: cluster, C12e: cluster, C12f: cluster, C12g: cluster, C12h: cluster, C13: cluster, CN: plasma processing device, CS: cassette, CT: coating Equipment, D: film forming equipment, Ea: etching equipment, Eb: etching equipment, Ec: etching equipment, Ed: etching equipment, Ef: etching equipment, Eg: etching equipment, Eh: etching equipment, EXPa: exposure equipment, EXPb: exposure equipment, HTa: baking equipment, HTb: baking equipment, HTc: baking equipment, HTd: baking equipment, TF: transfer chamber, TFa: transfer chamber, TFb: transfer chamber, TFc: transfer chamber, TFd: transfer chamber, TFe: transfer chamber, TFf: transfer chamber, TFg: transfer chamber , TFh: transfer chamber, TFi: transfer chamber, TFj: transfer chamber, V: vacuum process device, V1: vacuum process device, V2: vacuum process device, V3: vacuum process device, V4: vacuum process device, V5: vacuum process device, V6: vacuum process device, V7: vacuum process device, V8: vacuum process device, V9: vacuum process device, V10: vacuum process device, V11: vacuum process device, W: waiting chamber, 10: manufacturing equipment, 20: gate valve, 30: film forming equipment, 31: film forming material supply unit, 32: mask jig, 33: substrate alignment unit,35: opening, 51: substrate holder, 52: evaporation source, 53: shutter, 54: exhaust port, 55: inlet, 56: lower electrode, 57: target, 58: upper electrode, 59: shower plate, 60: workpiece, 60a: workpiece, 60b: workpiece, 61: substrate, 62: substrate holder, 63: substrate holder, 64: heater, 71: conveying device, 100: display device, 110B: light-emitting device, 1 10G: light-emitting device, 110R: light-emitting device, 111: pixel electrode, 112B: EL layer, 112Bf: EL film, 112G: EL layer, 112Gf: EL film, 112R: EL layer, 112Rf: EL film, 112W: EL layer, 113: common electrode, 114B: colored layer, 114G: colored layer, 114R: colored layer, 115: transistor, 116: transistor, 117: transistor, 121 : protective layer, 125B1: protective layer, 125B2: protective layer, 125Bf: protective film, 125Bf1: protective film, 125Bf2: protective film, 125G: protective layer, 125G1: protective layer, 125G2: protective layer, 125Gf1: protective film, 125Gf2: protective film, 125R1: protective layer, 125R2: protective layer, 125Rf1: protective film, 125Rf2: protective film, 126: barrier layer, 126f: barrier film, 1 27: insulating layer, 130: barrier layer, 143a: resist mask, 143b: resist mask, 143c: resist mask, 200: transfer device, 201: controller, 202: power source, 203: battery, 204: wheels, 205: gas cylinder, 206: valve, 207: valve, 208: carry-in / out entrance, 209: transfer device, 210: inlet, 211: outlet, 250: photomask,

Claims

1. having a first cluster and a second cluster; the second cluster is connected to the first cluster via a first buffer chamber; for a workpiece having an organic compound film, a first inorganic film, a second inorganic film, and a resist mask laminated in this order; the first cluster has a function of etching the first inorganic film and the second inorganic film, a function of etching the organic compound film to form an organic compound layer, a function of removing the resist mask, a function of removing the second inorganic film, and a function of forming a third inorganic film covering the side surface of the organic compound layer; the second cluster has a function of applying a resin onto the third inorganic film, a function of removing unnecessary portions of the resin, and a function of curing the resin in an inert gas atmosphere, a manufacturing apparatus for a light-emitting device.

2. In Claim 1, the first cluster has a first dry etching apparatus, a second dry etching apparatus, a third dry etching apparatus, and a film forming apparatus; the second cluster has a coating apparatus, a first baking apparatus, an exposure apparatus, a developing apparatus, and a second baking apparatus, a manufacturing apparatus for a light-emitting device.

3. In Claim 2, the second dry etching apparatus has an ashing function, a manufacturing apparatus for a light-emitting device.

4. In Claim 2, the film forming apparatus is an ALD apparatus, a manufacturing apparatus for a light-emitting device.

5. In any one of Claims 1 to 4, having a third cluster; the third cluster is connected to the second cluster via a second buffer chamber; the third cluster has a function of etching the third inorganic film and the first inorganic film using the resin as a mask, a manufacturing apparatus for a light-emitting device.

6. In Claim 5, the third cluster, has a fourth dry etching apparatus and a first wet etching apparatus, a manufacturing apparatus for a light-emitting device.

7. In Claim 5, the third cluster, has a first wet etching apparatus and a second wet etching apparatus, a manufacturing apparatus for a light-emitting device.

8. In any one of Claims 1 to 4, having a third cluster; the third cluster is connected to the second cluster via a second buffer chamber; The manufacturing apparatus of a light-emitting device, wherein the third cluster has a function of etching the third inorganic film using the resin as a mask, ashing the end portion of the resin to retreat it, and etching the first inorganic film.

9. In claim 8, the third cluster is a manufacturing apparatus of a light-emitting device including a fourth dry etching apparatus, a dry etching apparatus or an ashing apparatus having an ashing function, and a first wet etching apparatus.

10. In claim 8, the third cluster is a manufacturing apparatus of a light-emitting device including a first wet etching apparatus, a dry etching apparatus or an ashing apparatus having an ashing function, and a second wet etching apparatus.

11. In claim 5, it has a fourth cluster, the fourth cluster is connected to the third cluster via a third buffer chamber, and the fourth cluster is a manufacturing apparatus of a light-emitting device having a function of forming a conductive layer and an insulating layer on the organic compound layer.

12. In claim 11, the fourth cluster is a manufacturing apparatus of a light-emitting device having two or more of a vapor deposition apparatus, a sputtering apparatus, and an ALD apparatus.