Metallized film and film capacitor

Abstract

The metallized film of the present invention comprises a dielectric film and a metal vapor-deposited electrode formed on the surface of the dielectric film, wherein the metal vapor-deposited electrode is arranged such that an insulating margin extending in the longitudinal direction of the dielectric film is provided at one end in the width direction of the dielectric film, the metal vapor-deposited electrode has a plurality of protrusions facing the insulating margin at an end facing the insulating margin, and the plurality of protrusions have flat portions along the extension direction of the insulating margin.

Description

Metallized Films and Film Capacitors

[0001] The present invention relates to metallized films and film capacitors.

[0002] Patent Document 1 describes a metallized film in which a metal layer is formed on at least one surface of a polymer film, and a metallized film capacitor constructed from the metallized film. The metallized film described in Patent Document 1 has a portion at one end of one surface of the metallized film where the metal layer is not formed, and the boundary between the portion where the metal layer is formed and the portion where the metal layer is not formed is wavy.

[0003] JP 2009-188001 A

[0004] The metallized film and metallized film capacitor described in Patent Document 1 still have room for improvement in terms of suppressing short circuits while suppressing a decrease in capacitance.

[0005] The present invention provides a metallized film and a film capacitor that can suppress short circuits while suppressing a decrease in capacitance.

[0006] A metallized film according to one embodiment of the present invention comprises a dielectric film and a metal vapor deposition electrode formed on the surface of the dielectric film, wherein the metal vapor deposition electrode is positioned so that an insulating margin extending in the longitudinal direction of the dielectric film is provided at one end of the width direction of the dielectric film, and the metal vapor deposition electrode has a plurality of protrusions facing the insulating margin at the end facing the insulating margin, and the plurality of protrusions have flat portions that are flat along the direction in which the insulating margin extends.

[0007] A film capacitor according to one aspect of the present invention includes: a wound body made of the above-described metallized film; and a pair of end electrodes arranged on both ends of the metallized film.

[0008] According to the present invention, a metallized film and a film capacitor are provided that can suppress short circuits while suppressing a decrease in capacitance.

[0009] Perspective view showing a film capacitor according to Embodiment 1 of the present invention. Schematic view showing a metallized film according to Embodiment 1 of the present invention. Enlarged view of region E1 in FIG. 2A. Diagram showing the simulation result of the displacement amount of a metallized film having a metal-vapor-deposited electrode without protrusions. Enlarged view of region R1 in FIG. 3A. Diagram showing the simulation result of the displacement amount of a metallized film having a metal-vapor-deposited electrode with protrusions. Enlarged view of region R2 in FIG. 3C. Schematic cross-sectional view schematically showing the cross-section of the film capacitor of FIG. 1. Schematic cross-sectional view showing the state where the metal-vapor-deposited electrode and the dielectric film of film capacitor 1 in FIG. 4A are contracted. Table showing the results of how much the effective electrode width changed before and after applying voltage in film capacitors formed by the metallized films of the comparative example and the example. Schematic view showing a metallized film according to Modification 1 of Embodiment 1. Table showing the results of how much the effective electrode width changed before and after applying voltage in a film capacitor formed by the metallized film of Modification 1. Schematic view showing a metallized film according to Modification 2 of Embodiment 1. Enlarged view of region E2 in FIG. 8A. Table showing the results of how much the effective electrode width changed before and after applying voltage in a film capacitor formed by the metallized film of Modification 2. Schematic view showing a metallized film according to Modification 3 of Embodiment 1. Enlarged view of region E3 in FIG. 10A. Table showing the results of how much the effective electrode width changed before and after applying voltage in a film capacitor formed by the metallized film of Modification 3.

[0010] (Background of the present invention) A film capacitor formed by winding or laminating a metallized film in which a metal-vapor-deposited electrode is formed on the surface of a dielectric film is known. When a voltage is applied to the film capacitor, the temperature of the metal-vapor-deposited electrode formed on the surface of the dielectric film rises. When the metal-vapor-deposited electrode with the increased temperature is cooled, the metal-vapor-deposited electrode contracts, a gap occurs between the laminated dielectric films, and there is a problem that the capacitance of the film capacitor decreases. Also, when a gap occurs between the dielectric films, the dielectric films vibrate when a voltage is applied, and there is a problem that so-called "whining" occurs.

[0011] In the metallized film and metallized film capacitor described in Patent Document 1, the boundary between the metal layer-formed and non-metal layer-formed portions of the polymer film is formed in a corrugated shape to reduce "squeak noise." However, when the boundary is corrugated, the electric field concentrates at the peaks of the corrugations due to the edge effect. The peaks of the corrugations are spaced closer to the end electrodes of the film capacitor than the other portions. This poses a problem of short-circuiting between the peaks of the corrugations of the metal layer, where the electric field is concentrated, and the end electrodes.

[0012] The present inventor(s) have investigated a metallized film and a film capacitor that can suppress the occurrence of short circuits while suppressing a decrease in the capacitance of the film capacitor, and have arrived at the following invention.

[0013] A first embodiment of the present invention will be described below with reference to the accompanying drawings. In each drawing, elements are exaggerated for ease of explanation.

[0014] (First Embodiment) [Overall Configuration] Fig. 1 is a perspective view showing a film capacitor 1 according to a first embodiment of the present invention. Fig. 2A is a schematic diagram showing a metallized film 11 according to the first embodiment of the present invention. Fig. 2B is an enlarged view of region E1 in Fig. 2A.

[0015] 1, the film capacitor 1 includes a wound body 10 and a pair of end electrodes 20 formed on both ends of the wound body 10. The wound body 10 is formed by laminating or winding a metallized film 11, which will be described later with reference to FIGS. 2A and 2B. The pair of end electrodes 20 are formed by spraying a metal such as aluminum or zinc onto both ends of the wound body 10.

[0016] As shown in FIG. 2A, metallized film 11 is a film in which a vapor-deposited metal electrode 13 is formed on the surface of dielectric film 12.

[0017] Dielectric film 12 is formed of a plastic film containing a thermoplastic resin such as polyethylene terephthalate, polypropylene, polyphenylene sulfide, or polyethylene naphthalate, or a plastic film containing a thermosetting resin such as a cured product obtained by reacting a hydroxyl group (OH group) of the first organic material with an isocyanate group (NCO group) of the second organic material. Vapor-deposited metal electrode 13 is formed of a metal such as aluminum or zinc.

[0018] Vapor-deposited metal electrode 13 is an electrode connected to one first end surface electrode 21 of end surface electrodes 20 of film capacitor 1. Vapor-deposited metal electrode 13 is arranged at one end 12a in the width direction W of dielectric film 12 so as to provide an insulating margin 16 extending in the longitudinal direction L of dielectric film 12. Insulating margin 16 is a portion of the surface of dielectric film 12 on which vapor-deposited metal electrode 13 is not formed. Insulating margin 16 is provided to prevent contact and short-circuiting between end surface electrode 20 and the other second end surface electrode 22.

[0019] End 13a of vapor deposited metal electrode 13 facing insulating margin 16 has a plurality of protrusions 14 that protrude toward insulating margin 16, i.e., in protrusion direction P shown in FIG. 2A . That is, end 13a of vapor deposited metal electrode 13 facing insulating margin 16 has an uneven shape. In this embodiment, protrusions 14 are rectangular. As shown in FIG. 2B , each of the plurality of protrusions 14 has a flat portion 14a that is flat along the direction in which insulating margin 16 extends (longitudinal direction L). Flat portion 14a is the portion of protrusion 14 that faces insulating margin 16.

[0020] In this embodiment, the multiple protrusions 14 are arranged at intervals along the longitudinal direction L. The intervals between the multiple protrusions 14 may be equal or may be different. In this embodiment, as shown in Fig. 2A, the multiple protrusions 14 are arranged at equal intervals. In other words, the multiple protrusions 14 are arranged at intervals cl.

[0021] In the present embodiment, the flat portions 14a of the respective protrusions 14 all have the same length d1. The length d1 of the flat portions 14a can be, for example, 0.7 mm or more and 1.5 mm or less along the longitudinal direction L of the dielectric film 12. The length d1 of the flat portions 14a does not have to be the same, and may vary within the range of 0.7 mm or more and 1.5 mm or less.

[0022] FIG. 3A shows the results of a simulation of the amount of displacement of metallized film 11 having vapor deposited metal electrode 13 without protrusions 14. FIG. 3B is an enlarged view of region R1 in FIG. 3A. FIG. 3C is a view showing the results of a simulation of the amount of displacement of metallized film 11 having vapor deposited metal electrode 13 with protrusions 14 formed thereon. FIG. 3D is an enlarged view of region R2 in FIG. 3C. In FIGS. 3A to 3D, vapor deposited metal electrode 13 is formed on the right side of the drawing, and insulating margin 16 is provided on the left side of the drawing. FIGS. 3A to 3D show the results of a simulation of the amount of displacement of metallized film 11 with respect to temperature when a voltage is applied to metallized film 11.

[0023] The simulation was performed using analytical simulation software Femtet (registered trademark) manufactured by Murata Software Co., Ltd. The calculation item was an applied analysis that calculates the amount of displacement relative to temperature, the mode was a steady-state analysis, and calculations were performed for cases where the temperature was changed from -40°C to 125°C.

[0024] 3A and 3B , when no protrusion 14 is provided at the end of vapor-deposited metal electrode 13 facing insulating margin 16, the displacement of metallized film 11 is V0. This is because heat concentrates at end 13 a of vapor-deposited metal electrode 13, causing a temperature rise. If the end of vapor-deposited metal electrode 13 is formed straight, heat is likely to concentrate at end 13 a of vapor-deposited metal electrode 13 when a voltage is applied to the film capacitor.

[0025] 3C and 3D, when convex portions 14 are provided on end portions 13a of vapor deposited metal electrode 13, the displacement of metallized film 11 is V1, which is smaller than the displacement V0 in the case of Figures 3A and 3B. This is because heat is dispersed rather than concentrated at end portions 13a of vapor deposited metal electrode 13, thereby reducing the extent of the temperature rise.

[0026] Fig. 4A is a diagram schematically illustrating a local cross section of film capacitor 1 of Fig. 1. Fig. 4B is a schematic cross section showing a state in which vapor deposited metal electrode 13 and dielectric film 12 of film capacitor 1 of Fig. 4A have shrunk.

[0027] 4A , in film capacitor 1, for example, a pair of metallized films 11 are overlapped. Vapor-deposited metal electrode 213 of one metallized film 211 is connected to first end surface electrode 21, and vapor-deposited metal electrode 313 of the other metallized film 311 is connected to the other second end surface electrode 22. By providing insulating margins 216, 316 on metallized films 211, 311, respectively, vapor-deposited metal electrode 213 of one metallized film 211 can be prevented from connecting to the other second end surface electrode 22. In the thickness direction of metallized films 211, 311, the overlapping portion of two vapor-deposited metal electrodes 213, 313 is an effective electrode portion effective as an electrode of film capacitor 1, and has an effective electrode width EW1.

[0028] When a voltage is applied to film capacitor 1, the temperature of vapor-deposited metal electrodes 213, 313 rises, particularly at ends 213a, 313a. At this time, vapor-deposited metal electrodes 213, 313 contract in the direction of arrow S1 in FIG. 4A . A strong force due to thermal contraction of vapor-deposited metal electrodes 213, 313 is applied near ends 213a, 313a of vapor-deposited metal electrodes 213, 313, as shown in region R1 in FIG. 4A . The force of the contraction of vapor-deposited metal electrodes 213, 313 pulls on dielectric film 12. As a result, a gap Sp is formed between a pair of metallized films 11, as shown in FIG. 4B . When gap Sp is formed between metallized films 11, the effective electrode width of the effective electrode portion of film capacitor 1 becomes width EW2, which is smaller than width EW1, resulting in a decrease in the capacitance of film capacitor 1.

[0029] 2A , by providing a plurality of protrusions 14 on end 13 a of vapor-deposited metal electrode 13, heat concentration at end 13 a of vapor-deposited metal electrode 13 can be suppressed, thereby suppressing thermal contraction of vapor-deposited metal electrode 13. This can prevent the occurrence of gaps Sp between metallized films 11. Furthermore, since protrusions 14 have flat portions 14 a, electric field concentration can be suppressed, preventing short-circuiting between vapor-deposited metal electrode 13 on one metallized film 11 and end electrode 20 on the other.

[0030] [Example] Using the metallized film 11 according to the first embodiment, the rate of change in the size of the gap due to changes in the dimensions of the protrusions 14 was measured. FIG. 5 is a table showing the results of the change in the effective electrode width before and after the application of voltage in the film capacitor 1 formed using the metallized films of the comparative example and the example. The change in the effective electrode width indicates the ratio of the decrease in the effective electrode width EW2 after the application of voltage to the effective electrode width EW1 before the application of voltage to the film capacitor 1. The reference capacitance of the film capacitor 1 at a temperature of 25°C was measured as C ０ , the capacitance when the temperature is changed is C １ The change in capacitance when ０ -C １ The reference dielectric constant of the dielectric film 12 at a temperature of 25° C. is ε ０ , the dielectric constant when the temperature is changed is ε １ The change in dielectric constant when ０ -ε １ In this case, EW2 / EW1, which indicates the amount of change in the effective electrode width, is expressed as follows: EW2 / EW1=(1-ΔC / C ０ ) × (1 − Δε / ε ０ ) is calculated using the formula:

[0031] A metallized film having a vapor-deposited metal electrode without a protrusion was used as a comparative example. In the metallized film of the comparative example, the edge of the vapor-deposited metal electrode on the insulating margin side was formed in a straight line. In the metallized film of the comparative example, an insulating margin with a width of 2.0 mm was provided.

[0032] The examples used were metallized films 11 having vapor-deposited metal electrodes 13 with a plurality of protrusions 14, as described in embodiment 1. In each example, height h1 (see FIG. 2B ), length d1 (see FIG. 2B ), margin width md (see FIG. 2A ) between flat portions 14a of protrusions 14 and one end 12a of dielectric film 12, and spacing cl between adjacent protrusions 14 were varied.

[0033] In Example 1-1, metallized film 11 was used in which height h1 of convex portion 14 was 0.10 mm, length d1 of flat portion 14a of convex portion 14 was 0.7 mm, margin width md was 1.90 mm, and spacing cl of convex portions 14 was 1.4 mm.

[0034] In Example 1-2, metallized film 11 was used in which height h1 of convex portion 14 was 0.30 mm, length d1 of flat portion 14a of convex portion 14 was 1.5 mm, margin width md was 1.70 mm, and spacing cl of convex portions 14 was 0.6 mm.

[0035] In Example 1-3, metallized film 11 was used in which height h1 of convex portion 14 was 0.15 mm, length d1 of flat portion 14a of convex portion 14 was 1.0 mm, margin width md was 1.35 mm, and spacing cl of convex portions 14 was 1.1 mm.

[0036] As shown in Figure 5, the reduction rate of the effective electrode width (1 - EW2 / EW1) was 1.8% in the comparative example, while it was 0.05% to 0.30% in Examples 1-1 to 1-3, which is smaller than the comparative example. Providing multiple protrusions 14 on end 13a of vapor-deposited metal electrode 13 reduces the concentration of heat at end 13a of vapor-deposited metal electrode 13, reducing the degree of shrinkage of vapor-deposited metal electrode 13 and thereby suppressing the occurrence of gaps Sp. Therefore, Examples 1-1 to 1-3 suppress the decrease in capacitance of film capacitor 1 compared to the comparative example.

[0037] [Effects] According to the above-described embodiment, the following effects can be achieved.

[0038] Metallized film 11 includes dielectric film 12 and vapor-deposited metal electrode 13. Vapor-deposited metal electrode 13 is formed on the surface of dielectric film 12 and is arranged such that one end 12a of dielectric film 12 in width direction W has insulating margin 16 extending in longitudinal direction L of dielectric film 12. Vapor-deposited metal electrode 13 has, at end 13a facing insulating margin 16, multiple protrusions 14 directed toward insulating margin 16, and multiple protrusions 14 have flat portions 14a that are flat along the direction in which insulating margin 16 extends.

[0039] With this configuration, concentration of heat on vapor deposited metal electrode 13 is suppressed, thereby suppressing a decrease in capacitance, and the provision of flat portion 14a on protrusion 14 makes it possible to suppress short circuits.

[0040] The plurality of protrusions 14 are arranged at intervals from one another in the longitudinal direction L of the dielectric film 12 .

[0041] This configuration further reduces the concentration of heat at end 13 a of vapor deposited metal electrode 13 .

[0042] The length d1 of the flat portion 14a is not less than 0.7 mm and not more than 1.5 mm.

[0043] This configuration can further improve the effect of suppressing short circuits. By setting the length d1 of the flat portion 14a to 0.7 mm or more, the concentration of electric field can be suppressed, thereby suppressing the occurrence of short circuits. Furthermore, by setting the length of the flat portion 14a to 1.5 mm or less, the concentration of heat can be suppressed, thereby suppressing the occurrence of gaps Sp between the dielectric films 12.

[0044] Film capacitor 1 includes wound body 10 made of the above-described metallized film 11 and a pair of end electrodes 20 arranged on both ends of wound body 10 .

[0045] With this configuration, it is possible to provide a film capacitor that can suppress a decrease in capacitance and also suppress short circuits.

[0046] [Modification] Fig. 6 is a schematic diagram showing a metallized film 111 according to a first modification of the first embodiment. As shown in Fig. 6, vapor deposited metal electrode 113 may include a plurality of segmented electrodes 113b. The plurality of segmented electrodes 113b are formed by dividing vapor deposited metal electrode 113 by slits 117 provided along width direction W of dielectric film 112. Each of the plurality of segmented electrodes 113b has a single protrusion 114. In other words, each segmented electrode 113b has a single protrusion 114 at end 113a on the insulating margin 116 side, which protrudes toward one end 112a of dielectric film 112.

[0047] Vapor deposited metal electrode 113 has a strip-shaped connecting portion 118 extending longitudinally at the other end 112b of dielectric film 112 in width direction W. Connecting portion 118 is used to electrically connect the end surface electrodes of the film capacitor to vapor deposited metal electrode 113. Each of multiple segmented electrodes 113b is electrically connected to connecting portion 118 via fuse 119.

[0048] Such a configuration can achieve the same effects as metallized film 11 of embodiment 1. Furthermore, a film capacitor formed using metallized film 111 can be endowed with a safety function, thereby improving safety.

[0049] 7 is a table showing the results of the change in effective electrode width before and after voltage application in a film capacitor formed using metallized film 111 of Modification 1. The height h2 and width d2 of protrusion 114, the margin width md2 between flat portion 114a of protrusion 114 and one end 112a of dielectric film 12, the spacing between adjacent protrusions cl2, and the slit width s2 were changed, and the change in effective electrode width was measured. The effective electrode width was calculated using the method described in Embodiment 1. The comparative example is the same as that described in Embodiment 1.

[0050] In Example 2-1, a metallized film 11 was used in which the height h2 of the convex portion 114 was 0.10 mm, the length d1 of the flat portion 114a of the convex portion 114 was 0.7 mm, the margin width md2 was 1.90 mm, the spacing cl2 of the convex portions 114 was 1.4 mm, and the slit width s2 was 0.1 mm.

[0051] In Example 2-2, a metallized film 11 was used in which the height h2 of the convex portion 114 was 0.30 mm, the length d1 of the flat portion 114a of the convex portion 114 was 1.5 mm, the margin width md2 was 1.70 mm, the spacing cl2 of the convex portions 114 was 0.6 mm, and the slit width s2 was 0.1 mm.

[0052] In Example 2-3, a metallized film 11 was used in which the height h2 of the convex portion 114 was 0.15 mm, the length d1 of the flat portion 114a of the convex portion 114 was 1.0 mm, the margin width md2 was 1.35 mm, the spacing cl2 of the convex portions 114 was 1.1 mm, and the slit width s2 was 0.1 mm.

[0053] As shown in FIG. 7, in Examples 2-1 to 2-3, the reduction rate of the effective electrode width is the smallest compared to the comparative example, and the reduction in the capacitance of the film capacitor can be suppressed.

[0054] Fig. 8A is a schematic diagram showing metallized film 411 according to Variation 2 of Embodiment 1. Fig. 8B is an enlarged view of region E2 in Fig. 8A . As shown in Figs. 8A and 8B , in metallized film 411 according to Variation 2, convex portion 414 of vapor deposited metal electrode 413 is formed so that its width increases toward flat portion 414a at its tip. That is, width da1 of convex portion 414 on the side of flat portion 414a is larger than width db1 of vapor deposited metal electrode 413 on the side of end 413a.

[0055] 9 is a table showing the results of the change in effective electrode width before and after voltage application in a film capacitor formed using metallized film 411 of Modification Example 2. The height h3 of the convex portion 414, the width da1 of the flat portion 414a side of the convex portion 414, the width db1 of the end 413a side of the convex portion 414, the margin width md3, and the spacing cl3 between the flat portions 414a side of adjacent convex portions 414 were changed, and the change in effective electrode width was measured. The effective electrode width was calculated using the method described in Embodiment 1. The comparative example is the same as that described in Embodiment 1.

[0056] In Example 3-1, metallized film 11 was used having height h3 of 0.10 mm, width da1 on flat portion 414a side of 1.0 mm, width db1 on end portion 413a side of 0.88 mm, margin width md3 of 1.90 mm, and spacing cl3 of 1.1 mm.

[0057] In Example 3-2, metallized film 11 was used having height h3 of 0.30 mm, width da1 on flat portion 414a side of 1.0 mm, width db1 on end portion 413a side of 0.65 mm, margin width md3 of 1.70 mm, and spacing cl3 of 1.1 mm.

[0058] In Example 3-3, metallized film 11 was used having height h3 of 0.15 mm, width da1 on flat portion 414a side of 1.0 mm, width db1 on end portion 413a side of 0.83 mm, margin width md3 of 1.35 mm, and spacing cl3 of 1.1 mm.

[0059] As shown in FIG. 9, in Examples 3-1 to 3-3, the reduction rate of the effective electrode width is the smallest compared to the comparative example, and the reduction in the capacitance of the film capacitor can be suppressed.

[0060] Fig. 10A is a schematic diagram showing metallized film 511 according to Variation 3 of Embodiment 1. Fig. 10B is an enlarged view of region E3 in Fig. 10A . As shown in Figs. 10A and 10B , in metallized film 511 according to Variation 3, convex portion 514 of vapor deposited metal electrode 513 is formed so that its width narrows toward flat portion 514a at its tip. That is, width da2 of convex portion 514 on the side of flat portion 514a is larger than width db2 of vapor deposited metal electrode 513 on the side of end 513a.

[0061] 11 is a table showing the results of the change in effective electrode width before and after voltage application in a film capacitor formed using metallized film 511 of Modification 3. The height h4 of convex portion 514, width da2 of convex portion 514 on the flat portion 514a side, width db2 of convex portion 514 on the end 513a side, margin width md4, and spacing cl4 between adjacent convex portions 514 on the flat portion 514a side were changed, and the change in effective electrode width was measured. The effective electrode width was calculated using the method described in Embodiment 1. The comparative example is the same as that described in Embodiment 1.

[0062] In Example 4-1, metallized film 11 was used having height h4 of 0.10 mm, width da2 on flat portion 514a side of 1.0 mm, width db2 on end portion 513 side of 1.1 mm, margin width md4 of 1.90 mm, and spacing cl4 of 1.1 mm.

[0063] In Example 4-2, metallized film 11 was used having height h4 of 0.30 mm, width da2 on flat portion 514a side of 1.0 mm, width db2 on end portion 513 side of 1.3 mm, margin width md4 of 1.70 mm, and spacing cl4 of 1.1 mm.

[0064] In Example 4-3, metallized film 11 was used having height h4 of 0.15 mm, width da2 on flat portion 514a side of 1.0 mm, width db2 on end portion 513 side of 1.2 mm, margin width md4 of 1.35 mm, and spacing cl4 of 1.1 mm.

[0065] In Example 4-4, metallized film 11 was used having height h4 of 0.10 mm, width da2 on flat portion 514a side of 1.0 mm, width db2 on end portion 513 side of 2.1 mm, margin width md4 of 1.90 mm, and spacing cl4 of 1.1 mm.

[0066] As shown in FIG. 11, in Examples 4-1 to 4-4, the reduction rate of the effective electrode width is the smallest compared to the comparative example, and the reduction in the capacitance of the film capacitor can be suppressed.

[0067] In the above-described embodiment, an example in which the protrusion 14 is rectangular has been described, but the shape of the protrusion 14 is not limited to a rectangular shape. For example, the corners of the protrusion 14 may be chamfered.

[0068] (Summary of the embodiment) (1) The metallized film of the present invention comprises a dielectric film and a metal vapor deposition electrode formed on the surface of the dielectric film, the metal vapor deposition electrode being positioned so that an insulating margin extending in the longitudinal direction of the dielectric film is provided at one end of the width direction of the dielectric film, the metal vapor deposition electrode having a plurality of protrusions facing the insulating margin at the end facing the insulating margin, the plurality of protrusions having flat portions that are flat along the direction in which the insulating margin extends.

[0069] (2) In the metallized film of (1), the plurality of protrusions may be arranged at intervals in the longitudinal direction of the dielectric film.

[0070] (3) In the metallized film of (1) or (2), the length of the flat portion may be 0.7 mm or more and 1.5 mm or less.

[0071] (4) In the metallized film of any one of (1) to (3), the metal vapor deposition electrode may include a plurality of divided electrodes divided by slits arranged along the width direction of the dielectric film, and each of the plurality of divided electrodes may have one of the above-mentioned convex portions.

[0072] (5) In the metallized film of (4), the metal vapor deposition electrode may have a strip-shaped connecting portion extending longitudinally at the other end of the width direction of the dielectric film, and each of the multiple divided electrodes may be electrically connected to the connecting portion.

[0073] (6) A film capacitor of the present invention comprises a wound body made of any one of the metallized films (1) to (5) and end electrodes arranged on both ends of the metallized film.

[0074] The present invention has broad applicability to film capacitors and metallized films for forming film capacitors.

[0075] REFERENCE SIGNS LIST 1 film capacitor 10 wound body 11, 111, 211, 311, 411, 511 metallized film 12, 112 dielectric film 12a, 112a one end 13, 113, 213, 313, 413, 513 vapor-deposited metal electrode 13a, 113a, 213a, 313a, 413a, 513a end 14, 114, 414, 514 convex portion 14a, 114a, 414a, 514a flat portion 16, 116, 216, 416, 516 insulating margin 20 end electrode 117 slit 118 connection portion

Claims

1. A dielectric film; a vapor-deposited metal electrode formed on a surface of the dielectric film; Equipped with the vapor-deposited metal electrode is disposed at one end in a width direction of the dielectric film so as to provide an insulating margin extending in a longitudinal direction of the dielectric film, the vapor-deposited metal electrode has a plurality of protrusions extending toward the insulating margin at an end facing the insulating margin, The plurality of protruding portions each have a flat portion that is flat along an extending direction of the insulating margin, the vapor-deposited metal electrode includes a plurality of divided electrodes divided by slits provided in a width direction of the dielectric film, each of the plurality of divided electrodes having one of the protrusions; Metallized film.

2. A dielectric film, a vapor-deposited metal electrode formed on a surface of the dielectric film; Equipped with the vapor-deposited metal electrode is disposed at one end in a width direction of the dielectric film so as to provide an insulating margin extending in a longitudinal direction of the dielectric film, the vapor-deposited metal electrode has a plurality of protrusions extending toward the insulating margin at an end facing the insulating margin, The plurality of protruding portions have flat portions that are flat along an extension direction of the insulating margin and have a shape that becomes wider toward the flat portions. Metallized film.

3. A dielectric film; a vapor-deposited metal electrode formed on a surface of the dielectric film; Equipped with the vapor-deposited metal electrode is disposed at one end in a width direction of the dielectric film so as to provide an insulating margin extending in a longitudinal direction of the dielectric film, the vapor-deposited metal electrode has a plurality of protrusions extending toward the insulating margin at an end facing the insulating margin, The plurality of protruding portions have flat portions that are flat along an extension direction of the insulating margin, and have a shape in which the width narrows toward the flat portions. Metallized film.

4. the plurality of protrusions are arranged at intervals from one another in the longitudinal direction of the dielectric film. The metallized film of any one of claims 1 to 3.

5. The length of the flat portion is 0.7 mm or more and 1.5 mm or less. The metallized film of any one of claims 1 to 3.

6. the vapor-deposited metal electrode has a strip-shaped connection portion extending in a longitudinal direction at the other end in the width direction of the dielectric film, Each of the plurality of split electrodes is electrically connected to the connection portion. The metallized film of claim 5.

7. A roll made of the metallized film according to any one of claims 1 to 3; a pair of end electrodes disposed on both ends of the metallized film; Equipped with Film capacitor.