Semiconductor device

Abstract

This semiconductor device comprises: a semiconductor element; a sealing resin that covers the semiconductor element, and has a third side surface 55; a first terminal lead that has a first outer portion protruding from the third side surface; a second terminal lead that has a second outer portion protruding from the third side surface; and a first connection bar that is provided at a distance from the sealing resin. The first connection bar is sandwiched between the first outer portion and the second outer portion in a second direction. The first outer portion has a first proximal end that extends from the third side surface, and a first tip that extends from the first proximal end. The second outer portion has a second proximal end that extends from the third side surface, and a second tip that extends from the second proximal end. The first connection bar is connected to both the first proximal end and the second proximal end.

Description

Semiconductor Devices

[0001] The present disclosure relates to semiconductor devices.

[0002] Conventionally, semiconductor devices in which a semiconductor element such as a diode or transistor is covered with a resin package are known (see, for example, Patent Document 1). The semiconductor device described in Patent Document 1 includes a semiconductor element, a lead frame, and a resin package. The lead frame includes multiple leads, one of which includes a die bonding pad. The semiconductor element is mounted on the die bonding pad. The resin package covers the semiconductor element and also partially covers each of the multiple leads. The portions of each lead exposed from the resin package are terminals of the semiconductor device.

[0003] In such a semiconductor device manufacturing method, for example, when multiple semiconductor devices are manufactured simultaneously, the multiple leads are connected to each other by tie bars (also called dam bars) during the manufacturing process. These tie bars are cut after the resin package is formed.

[0004] JP 2011-82523 A

[0005] An object of the present disclosure is to provide a semiconductor device that is improved over conventional semiconductor devices. In particular, in view of the above circumstances, an object of the present disclosure is to provide a semiconductor device that effectively utilizes tie bars.

[0006] A first aspect of the present disclosure provides a semiconductor device comprising: a semiconductor element; an encapsulating resin having a resin side surface facing one side in a first direction and covering the semiconductor element; a first terminal lead including a first outer portion protruding from the resin side surface in the first direction; a second terminal lead including a second outer portion protruding from the resin side surface in the first direction; and a first connecting bar spaced from the encapsulating resin. The first outer portion and the second outer portion are adjacent to each other in a second direction perpendicular to the first direction. The first connecting bar is sandwiched between the first outer portion and the second outer portion in the second direction and is integrally connected to the first outer portion and the second outer portion. The first outer portion includes a first base end portion extending from the resin side surface and a first tip end portion extending from the first base end. The second outer portion includes a second base end portion extending from the resin side surface and a second tip end portion extending from the second base end. The first connecting bar connects the first base end and the second base end.

[0007] According to the above configuration, the tie bars can be effectively utilized in the semiconductor device.

[0008] FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment. FIG. 2 is a plan view showing the semiconductor device according to the first embodiment. FIG. 3 is a diagram showing the plan view of FIG. 2 with the sealing resin indicated by imaginary lines. FIG. 4 is a bottom view showing the semiconductor device according to the first embodiment. FIG. 5 is a front view showing the semiconductor device according to the first embodiment. FIG. 6 is a right side view showing the semiconductor device according to the first embodiment. FIG. 7 is a partial enlarged view of FIG. 6, showing the sealing resin indicated by imaginary lines. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 3. FIG. 9 is a partial enlarged view of FIG. 8. FIG. 10 is a partial enlarged view of FIG. 8. FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 3. FIG. 12 is a cross-sectional view taken along line XII-XII in FIG. 3. FIG. 13 is a partial enlarged view of FIG. 3. FIG. 14 is a partial enlarged view of FIG. 3. FIG. 15 is a partial enlarged view of FIG. 3. FIG. 16 is a partial enlarged view of FIG. 3. FIG. 17 is a diagram showing an example of a circuit configuration of a semiconductor device according to the first embodiment. FIG. 18 is a plan view showing one step in a manufacturing process of the semiconductor device according to the first embodiment. FIG. 19 is a plan view showing a semiconductor device according to a first modified example of the first embodiment, in which the sealing resin is shown by imaginary lines. FIG. 20 is a plan view showing a semiconductor device according to a second modified example of the first embodiment, in which the sealing resin is shown by imaginary lines. FIG. 21 is a plan view showing a semiconductor device according to a third modified example of the first embodiment, in which the sealing resin is shown by imaginary lines. FIG. 22 is a plan view showing a semiconductor device according to the second embodiment, in which the sealing resin is shown by imaginary lines. FIG. 23 is a cross-sectional view taken along line XXIII-XXIII in FIG. 22. FIG. 24 is an enlarged view of a portion of FIG. 23. FIG. 25 is a diagram showing an example of a circuit configuration of a semiconductor device according to the second embodiment. FIG. 26 is a plan view showing a semiconductor device according to a third embodiment, in which the sealing resin is shown by imaginary lines. FIG. 27 is an enlarged cross-sectional view taken along line XXVII-XXVII in FIG. 26. Fig. 28 is a diagram showing an example of a circuit configuration of a semiconductor device according to a third embodiment, Fig. 29 is a plan view showing a semiconductor device according to a fourth embodiment, in which a sealing resin is indicated by imaginary lines, and Fig. 30 is a diagram showing an example of a circuit configuration of a semiconductor device according to the fourth embodiment.Fig. 31 is a plan view showing a semiconductor device according to a first modified example of the fourth embodiment, in which the sealing resin is shown by imaginary lines; Fig. 32 is a plan view showing a semiconductor device according to a second modified example of the fourth embodiment, in which the sealing resin is shown by imaginary lines; and Fig. 33 is a plan view showing a semiconductor device according to a third modified example of the fourth embodiment, in which the sealing resin is shown by imaginary lines.

[0009] Preferred embodiments of the semiconductor device of the present disclosure will be described below with reference to the drawings. Hereinafter, identical or similar components will be designated by the same reference numerals, and redundant descriptions will be omitted. Terms such as "first," "second," and "third" in this disclosure are used merely as labels and are not intended to necessarily assign any order to their objects.

[0010] In this disclosure, unless otherwise specified, "a certain object A is formed on a certain object B" and "a certain object A is formed on (an) object B" include "a certain object A is formed directly on a certain object B" and "a certain object A is formed on a certain object B with another object interposed between the certain object A and the certain object B." Similarly, "a certain object A is disposed on a certain object B" and "a certain object A is disposed on (an) object B" include "a certain object A is disposed directly on a certain object B" and "a certain object A is disposed on (an) object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is located on (an) object B" includes "a certain object A is in contact with a certain object B and is located on (an) object B" and "a certain object A is located on (an) object B with another object interposed between the certain object A and the certain object B." Furthermore, unless otherwise specified, "when viewed from a certain direction, an object A overlaps an object B" includes "an object A overlaps the entire object B" and "an object A overlaps a part of an object B." Furthermore, "an object A (is made of) a certain material C" includes "an object A (is made of) a certain material C" and "an object A (is made of) a certain material C as its main component."

[0011] 1 to 17 show a semiconductor device A10 according to a first embodiment. The semiconductor device A10 includes a first die pad 10A, a second die pad 10B, a plurality of terminal leads 13, a first connecting bar 191, a second connecting bar 192, a third connecting bar 193, a fourth connecting bar 194, a semiconductor element 20, a first conductive portion 31, a second conductive portion 32, and a sealing resin 50. The semiconductor element 20 includes a first element 21 and a second element 22. The plurality of terminal leads 13 include a first terminal lead 14, a second terminal lead 15, a third terminal lead 16, a fourth terminal lead 171, a fifth terminal lead 181, a sixth terminal lead 172, and a seventh terminal lead 182.

[0012] For ease of explanation, the thickness direction of the semiconductor device A10 will be referred to as the "thickness direction z." In the following explanation, one side of the thickness direction z may be referred to as the upper side, and the other side as the lower side. Note that terms such as "upper," "lower," "upper," "lower," "top surface," and "bottom surface" indicate the relative positional relationship of each component, etc. in the thickness direction z, and do not necessarily define the relationship with the direction of gravity. Furthermore, "plan view" refers to the view in the thickness direction z. One direction perpendicular to the thickness direction z is referred to as the "first direction y." A direction perpendicular to the thickness direction z and the first direction y is referred to as the "second direction x."

[0013] As shown in FIGS. 3 and 8 , the first die pad 10A and the second die pad 10B are spaced apart from each other in the second direction x. The first die pad 10A, the second die pad 10B, and the multiple terminal leads 13 are configured from the same lead frame. The lead frame is made of copper (Cu) or a copper alloy. Therefore, the first die pad 10A, the second die pad 10B, and the multiple terminal leads 13 contain copper. Each of the first die pad 10A and the second die pad 10B is, for example, rectangular in plan view.

[0014] As shown in FIG. 8 , the first die pad 10A and the second die pad 10B each have a main surface 101 and a back surface 102. The main surface 101 and the back surface 102 described below are common to the first die pad 10A and the second die pad 10B unless otherwise specified. The main surface 101 faces in the thickness direction z (upward). The main surface 101 is covered with a sealing resin 50. A first element 21 is mounted on the main surface 101 of the first die pad 10A. The back surface 102 of the first die pad 10A faces the side opposite to the side on which the first element 21 is located in the thickness direction z. A second element 22 is mounted on the main surface 101 of the second die pad 10B. The back surface 102 of the second die pad 10B faces the side opposite to the side on which the second element 22 is located in the thickness direction z. As shown in FIGS. 4 and 8 , the back surface 102 is exposed from the sealing resin 50. The rear surface 102 is plated with, for example, tin (Sn).

[0015] As shown in FIGS. 3 and 8 , the sealing resin 50 covers the first element 21, the second element 22, the first conductive portion 31, the second conductive portion 32, and at least a portion of each of the first die pad 10A and the second die pad 10B. The sealing resin 50 also covers a portion of each of the terminal leads 13. The sealing resin 50 has electrical insulation properties. The sealing resin 50 includes, for example, a black epoxy resin. As shown in FIG. 2 , the dimension L1 of the sealing resin 50 in the second direction x is longer than the dimension L2 of the sealing resin 50 in the first direction y. The sealing resin 50 has a resin main surface 51, a resin back surface 52, a pair of first side surfaces 53, a second side surface 54, a third side surface 55, a plurality of recesses 56, a groove 57, and a plurality of recesses 581 and 582.

[0016] 8, the resin main surface 51 faces the same side as the main surfaces 101 of the first die pad 10A and the second die pad 10B in the thickness direction z. As shown in Fig. 8, the resin back surface 52 faces the opposite side to the resin main surface 51 in the thickness direction z. As shown in Fig. 4, the back surfaces 102 of the first die pad 10A and the second die pad 10B are exposed from the resin back surface 52.

[0017] 2 to 4 and 8 , the pair of first side surfaces 53 are spaced apart from each other in the second direction x. The pair of first side surfaces 53 face the second direction x and extend in the first direction y. The pair of first side surfaces 53 are connected to the resin main surface 51 and the resin back surface 52.

[0018] As shown in Figures 2 to 4, 6, 7, 11, and 12, the second side surface 54 and the third side surface 55 are spaced apart from each other in the first direction y. The second side surface 54 and the third side surface 55 face opposite each other in the first direction y and extend in the second direction x. The second side surface 54 and the third side surface 55 are connected to the resin main surface 51 and the resin back surface 52. As shown in Figures 3 and 7, a plurality of terminal leads 13 are exposed from the third side surface 55. The third side surface 55 is an example of a "resin side surface" as defined in the claims.

[0019] 2, 4, and 5, the recesses 56 are recessed in the first direction y from the third side surface 55 and extend in the thickness direction z from the resin main surface 51 to the resin back surface 52. In the second direction x, the recesses 56 are located individually between the seventh terminal lead 182 and the third terminal lead 16, between the third terminal lead 16 and the first terminal lead 14, between the first terminal lead 14 and the second terminal lead 15, and between the second terminal lead 15 and the fifth terminal lead 181.

[0020] 4, 5, and 8, the groove 57 is recessed from the resin back surface 52 in the thickness direction z and extends along the first direction y. Both sides of the groove 57 in the first direction y are connected to the second side surface 54 and the third side surface 55. When viewed along the thickness direction z, the groove 57 separates the back surface 102 of the first die pad 10A from the back surface 102 of the second die pad 10B. Note that the sealing resin 50 does not necessarily have to have the groove 57.

[0021] As shown in FIGS. 5 , 6 , 8 , 11 , and 12 , each of the multiple recesses 581, 582 is recessed from the resin main surface 51 in the thickness direction z. The planar shape of each of the multiple recesses 581, 582 is not particularly limited, but is circular in the illustrated example. As shown in FIG. 3 , each of the multiple recesses 581 overlaps the first die pad 10A in planar view. In the illustrated example, the multiple recesses 581 are individually located near the four corners of the first die pad 10A in planar view. As shown in FIG. 3 , each of the multiple recesses 582 overlaps the second die pad 10B in planar view. In the illustrated example, the multiple recesses 582 are individually located near the four corners of the second die pad 10B in planar view. Each of the multiple recesses 581, 582 does not overlap either the first conductive portion 31 or the second conductive portion 32 in planar view. The multiple recesses 581 are formed by pins for fixing the first die pad 10A during the manufacturing of the semiconductor device A10. The pins are pressed against the first die pad 10A to fix the first die pad 10A before the sealing resin 50 is formed. In this state, the formation of the sealing resin 50 begins. The pins are then pulled out before the formation of the sealing resin 50 is completed. As a result, the sealing resin 50 is formed in at least a portion of the area where the pins were located, so that the main surface 101 of the first die pad 10A is covered with the sealing resin 50. The multiple recesses 581 are marks formed during the molding process of the sealing resin 50. The multiple recesses 582 are similarly formed by pins for fixing the second die pad 10B during the manufacturing of the semiconductor device A10. The multiple recesses 582 are marks formed during the molding process of the sealing resin 50.

[0022] 1, 2, and 4, the sealing resin 50 further has a plurality of traces 589. The plurality of traces 589 are traces formed by, for example, an ejector pin pressed against the sealing resin 50 to remove the sealing resin 50 from a mold when the sealing resin 50 is formed. Each of the plurality of traces 589 is recessed from either the resin main surface 51 or the resin back surface 52. Note that none of the plurality of traces 589 may be formed on the sealing resin 50. Furthermore, as shown in FIG. 4, the back surface 102 of the first die pad 10A and the back surface 102 of the second die pad 10B each have a trace 109. The trace 109 formed on the first die pad 10A and the trace 109 formed on the second die pad 10B are traces formed by the aforementioned ejector pin. The traces 109 formed on the first die pad 10A are recessed from the back surface 102 of the first die pad 10A, and the traces 109 formed on the second die pad 10B are recessed from the back surface 102 of the second die pad 10B. Note that the traces 109 do not necessarily have to be formed on either the first die pad 10A or the second die pad 10B. The depths of the multiple traces 589 and the multiple traces 109 are, for example, smaller than the depths of the multiple recesses 581, but may be larger or the same.

[0023] 3 and 4 , the first die pad 10A and the second die pad 10B have a first end face 111, a second end face 112, a third end face 113, and a fourth end face 114. The first end face 111, the second end face 112, the third end face 113, and the fourth end face 114 are covered with the sealing resin 50. The first end face 111 faces the second direction x and extends in the first direction y. The first end face 111 is located closest to the pair of first side faces 53 of the sealing resin 50. The second end face 112 faces the first direction y and extends in the second direction x. The second end face 112 is located closest to the second side face 54 of the sealing resin 50. The third end face 113 faces the opposite side to the second end face 112 in the first direction y and extends in the second direction x. The third end face 113 is located closest to the third side surface 55 of the sealing resin 50. The fourth end face 114 faces the opposite side to the first end face 111 in the second direction x and extends in the first direction y. As shown in Figures 4 and 8, a groove portion 57 is located between the fourth end face 114 of the first die pad 10A and the fourth end face 114 of the second die pad 10B.

[0024] As shown in FIGS. 7, 11, and 12, the distance P2 between the third end face 113 and the third side face 55 is longer than the distance P1 between the second end face 112 and the second side face 54.

[0025] As shown in FIGS. 3 and 4 , the first die pad 10A and the second die pad 10B have a first corner end surface 121. The first corner end surface 121 is located between the first end surface 111 and the second end surface 112, and is located at one of the corners of the first die pad 10A and the second die pad 10B. The first corner end surface 121 is covered with the sealing resin 50 and is a flat surface inclined with respect to the first end surface 111 and the second end surface 112. Either the first inclination angle α1 of the first corner end surface 121 with respect to the first end surface 111 or the second inclination angle α2 of the first corner end surface 121 with respect to the second end surface 112 shown in FIG. 13 is 60° or more and 85° or less. Note that the first conductive portion 31 is omitted from FIG. 13 . One of the multiple recesses 581 is located near the first corner end face 121 of the first die pad 10A in a planar view, and one of the multiple recesses 582 is located near the first corner end face 121 of the second die pad 10B in a planar view.

[0026] 13 , a longest normal Nmax of the first corner end face 121 is set. The longest normal Nmax is the maximum value of the normal to the first corner end face 121 that extends from the first corner end face 121 of either the first die pad 10A or the second die pad 10B to the first side face 53 of the pair of first side faces 53 of the sealing resin 50 that is located closest to the first corner end face 121. The longest normal Nmax is 1.0 to 1.5 times the length of an intersection C (see FIG. 13 ) between the first corner end face 121 and an imaginary plane having the first direction y and the second direction x as in-plane directions.

[0027] 3 and 4 , the first die pad 10A and the second die pad 10B have a second corner end surface 122. The second corner end surface 122 is located between the first end surface 111 and the third end surface 113, and is located at one of the corners of the first die pad 10A and the second die pad 10B. The second corner end surface 122 is covered with the sealing resin 50 and is a flat surface inclined with respect to the first end surface 111 and the third end surface 113. Either a third inclination angle α3 of the second corner end surface 122 with respect to the first end surface 111 or a fourth inclination angle α4 of the second corner end surface 122 with respect to the third end surface 113 shown in FIG. 14 is between 60° and 85°. One of the multiple recesses 581 is located near the second corner end face 122 of the first die pad 10A in a planar view, and one of the multiple recesses 582 is located near the second corner end face 122 of the second die pad 10B in a planar view.

[0028] 3 and 4 , the first die pad 10A and the second die pad 10B have a third corner end face 123. The third corner end face 123 is located between the second end face 112 and the fourth end face 114, and is located at one of the corners of the first die pad 10A and the second die pad 10B. The third corner end face 123 is covered with the sealing resin 50 and is a flat surface inclined with respect to the second end face 112 and the fourth end face 114. Either a fifth inclination angle α5 of the third corner end face 123 with respect to the fourth end face 114 shown in FIG. 15 or a sixth inclination angle α6 of the third corner end face 123 with respect to the second end face 112 is between 60° and 85°. One of the multiple recesses 581 is located near the third corner end face 123 of the first die pad 10A in a planar view, and one of the multiple recesses 582 is located near the third corner end face 123 of the second die pad 10B in a planar view.

[0029] 3 and 4 , the first die pad 10A and the second die pad 10B have a fourth corner end face 124. The fourth corner end face 124 is located between the third end face 113 and the fourth end face 114, and is located at one of the corners of the first die pad 10A and the second die pad 10B. The fourth corner end face 124 is covered with the sealing resin 50 and is a flat surface inclined with respect to the third end face 113 and the fourth end face 114. Either a seventh inclination angle α7 of the fourth corner end face 124 with respect to the fourth end face 114 shown in FIG. 16 or an eighth inclination angle α8 of the fourth corner end face 124 with respect to the third end face 113 is 60° or more and 85° or less. One of the multiple recesses 581 is located near the fourth corner end face 124 of the first die pad 10A in a planar view, and one of the multiple recesses 582 is located near the fourth corner end face 124 of the second die pad 10B in a planar view.

[0030] The semiconductor element 20 is the functional center of the semiconductor device A10. The semiconductor element 20 includes a first element 21 and a second element 22. The first element 21 and the second element 22 are individually formed chips. As shown in FIG. 17 , in the semiconductor device A10, the first element 21 and the second element 22 are, for example, diodes. Each of the first element 21 and the second element 22 includes a compound semiconductor substrate. The composition of the compound semiconductor substrate includes silicon (Si) or silicon carbide (SiC).

[0031] The first element 21 is mounted on the first die pad 10A as shown in Figures 3, 8, and 9. Preferably, in a plan view, the center of gravity of the first element 21 overlaps the center of the first die pad 10A. The center of the first die pad 10A is the center when the first die pad 10A is divided into Nx (Nx is a positive odd number) parts in the second direction x, and is also a region corresponding to the center when the first die pad 10A is divided into Ny (Ny is a positive odd number) parts in the first direction y. Nx and Ny are not limited to any particular value, but may be, for example, 3 or 5.

[0032] 9 , the first element 21 has a first main surface 21a and a first back surface 21b. The first main surface 21a and the first back surface 21b are spaced apart in the thickness direction z. The first main surface 21a faces the same direction as the main surface 101 of the first die pad 10A. The first back surface 21b faces the opposite side to the first main surface 21a in the thickness direction z and faces the main surface 101 of the first die pad 10A.

[0033] As shown in FIG. 9 , the first element 21 has a principal surface electrode 211 and a rear surface electrode 213 .

[0034] As shown in FIG. 9 , the principal surface electrode 211 is disposed on the first principal surface 21 a. In this embodiment, the principal surface electrode 211 is, for example, an anode electrode. The principal surface electrode 211 includes a plurality of metal plating layers. The principal surface electrode 211 includes a nickel (Ni) plating layer and a gold (Au) plating layer laminated on the nickel plating layer. Alternatively, the principal surface electrode 211 may include a nickel plating layer, a palladium (Pd) plating layer laminated on the nickel plating layer, and a gold plating layer laminated on the palladium plating layer.

[0035] 9, the back surface electrode 213 is disposed on the first back surface 21b. The back surface electrode 213 is provided opposite to the main surface 101 of the first die pad 10A. In this embodiment, the back surface electrode 213 is, for example, a cathode electrode.

[0036] 3, 8, and 10, the second element 22 is mounted on the main surface 101 of the second die pad 10B. Preferably, in a plan view, the center of gravity of the second element 22 overlaps with the center of the second die pad 10B. The center of the second die pad 10B is the center when the second die pad 10B is divided into Lx (Lx is a positive odd number) in the second direction x, and is a region corresponding to the center when the second die pad 10B is divided into Ly (Ly is a positive odd number) in the first direction y. Lx and Ly are not limited to any particular value, but may be, for example, 3 or 5.

[0037] 10 , the second element 22 has a second main surface 22 a and a second back surface 22 b. The second main surface 22 a and the second back surface 22 b are spaced apart in the thickness direction z. The second main surface 22 a faces the same direction as the main surface 101 of the second die pad 10B. The second back surface 22 b faces the opposite side to the second main surface 22 a in the thickness direction z and faces the main surface 101 of the second die pad 10B.

[0038] As shown in FIG. 10 , the second element 22 has a principal surface electrode 221 and a rear surface electrode 223 .

[0039] As shown in FIG. 10 , the principal surface electrode 221 is disposed on the second principal surface 22 a. In this embodiment, the principal surface electrode 221 is, for example, an anode electrode. Like the principal surface electrode 211, the principal surface electrode 221 includes multiple metal plating layers. The principal surface electrode 221 includes a nickel (Ni) plating layer and a gold (Au) plating layer laminated on the nickel plating layer. Alternatively, the principal surface electrode 221 may include a nickel plating layer, a palladium (Pd) plating layer laminated on the nickel plating layer, and a gold plating layer laminated on the palladium plating layer.

[0040] 10, the back surface electrode 223 is disposed on the second back surface 22b. The back surface electrode 223 is provided opposite to the main surface 101 of the second die pad 10B. In this embodiment, the back surface electrode 223 is, for example, a cathode electrode.

[0041] 3 and 8 to 10, the semiconductor device A10 further includes two die bonding layers 231 and 232. Each of the two die bonding layers 231 and 232 is conductive. Each of the die bonding layers 231 and 232 is made of solder, for example. Alternatively, each of the die bonding layers 231 and 232 may be made of sintered metal.

[0042] 8 and 9 , the die bonding layer 231 is interposed between the main surface 101 of the first die pad 10A and the back surface electrode 213 of the first element 21. The die bonding layer 231 bonds the main surface 101 of the first die pad 10A to the back surface electrode 213 of the first element 21. This establishes electrical conduction between the back surface electrode 213 of the first element 21 and the first die pad 10A.

[0043] 8 and 10 , the die bonding layer 232 is interposed between the main surface 101 of the second die pad 10B and the back electrode 223 of the second element 22. The die bonding layer 232 bonds the main surface 101 of the second die pad 10B to the back electrode 223 of the second element 22. This establishes electrical continuity between the back electrode 223 of the second element 22 and the second die pad 10B.

[0044] 3 , the multiple terminal leads 13 are located on the side opposite to the side where the second end surface 112 faces the first die pad 10A and the second die pad 10B in the first direction y. At least one of the multiple terminal leads 13 is electrically connected to either the first element 21 or the second element 22. The multiple terminal leads 13 are arranged along the second direction x. The multiple terminal leads 13 include a first terminal lead 14, a second terminal lead 15, a third terminal lead 16, a fourth terminal lead 171, a fifth terminal lead 181, a sixth terminal lead 172, and a seventh terminal lead 182.

[0045] 3 , the first terminal lead 14 is spaced apart from the first die pad 10A and the second die pad 10B in the first direction y. The first terminal lead 14 is located between the second terminal lead 15 and the third terminal lead 16 in the second direction x. The first terminal lead 14 extends along the first direction y. The first terminal lead 14 is electrically connected to the principal surface electrode 211 (anode electrode) of the first element 21 and the principal surface electrode 221 (anode electrode) of the second element 22.

[0046] The first terminal lead 14 includes a first inner portion 14A and a first outer portion 14B. As shown in Fig. 3, the first inner portion 14A is covered with sealing resin 50. As shown in Fig. 3, the first outer portion 14B is connected to the first inner portion 14A and exposed from a third side surface 55 of the sealing resin 50. The first outer portion 14B extends in the first direction y away from the first die pad 10A and the second die pad 10B. The surface of the first outer portion 14B is plated with, for example, tin.

[0047] 3 , the first outer portion 14B includes a first base end portion 141 and a first tip end portion 142. The first base end portion 141 extends in the first direction y from the third side surface 55. The first tip end portion 142 extends in the first direction y from the first base end portion 141. In the illustrated example, the width of the first tip end portion 142 (the dimension along the second direction x) is smaller than the width of the first base end portion 141 (the dimension along the second direction x).

[0048] 3, the second terminal lead 15 includes a portion extending in the first direction y and is connected to the first die pad 10A. Therefore, the second terminal lead 15 is electrically connected to the back surface electrode 213 (cathode electrode) of the first element 21 via the first die pad 10A.

[0049] As shown in FIG. 3 , the second terminal lead 15 includes a second inner portion 15A and a second outer portion 15B. As shown in FIG. 3 , the second inner portion 15A is connected to the third end surface 113 of the first die pad 10A and is covered with the sealing resin 50. When viewed along the second direction x, the second inner portion 15A is bent. As shown in FIGS. 2 , 3 , 5 , and 6 , the second outer portion 15B is connected to the second inner portion 15A and is exposed from a third side surface 55 of the sealing resin 50. The second outer portion 15B extends in the first direction y away from the first die pad 10A. The second outer portion 15B is adjacent to one side of the first outer portion 14B in the second direction x. The surface of the second outer portion 15B is, for example, tin-plated.

[0050] 3 , the second outer portion 15B includes a second base end portion 151 and a second tip end portion 152. The second base end portion 151 extends in the first direction y from the third side surface 55. The second tip end portion 152 extends in the first direction y from the second base end portion 151. In the illustrated example, the width of the second tip end portion 152 (the dimension along the second direction x) is smaller than the width of the second base end portion 151 (the dimension along the second direction x).

[0051] 3, the third terminal lead 16 includes a portion extending in the first direction y and is connected to the second die pad 10B. Therefore, the third terminal lead 16 is electrically connected to the back surface electrode 223 (cathode electrode) of the second element 22 via the second die pad 10B.

[0052] As shown in FIG. 3 , the third terminal lead 16 includes a third inner portion 16A and a third outer portion 16B. The third inner portion 16A is connected to the third end surface 113 of the second die pad 10B and is covered with the sealing resin 50. When viewed in the second direction x, the third inner portion 16A is bent similarly to the second inner portion 15A of the second terminal lead 15. As shown in FIG. 3 , the third outer portion 16B is connected to the third inner portion 16A and exposed from a third side surface 55 of the sealing resin 50. The third outer portion 16B extends in the first direction y away from the second die pad 10B. The third outer portion 16B is adjacent to the first outer portion 14B on the other side in the second direction x. The surface of the third outer portion 16B is plated with, for example, tin.

[0053] 3 , the third outer portion 16B includes a third base end portion 161 and a third tip end portion 162. The third base end portion 161 extends in the first direction y from the third side surface 55. The third tip end portion 162 extends in the first direction y from the third base end portion 161. In the illustrated example, the width of the third tip end portion 162 (the dimension along the second direction x) is smaller than the width of the third base end portion 161 (the dimension along the second direction x).

[0054] 3 , the fourth terminal lead 171 is farthest from the first die pad 10A in the first direction y. The fourth terminal lead 171 is located closest to one side in the second direction x among the multiple terminal leads 13. The fourth terminal lead 171 is electrically connected to the main surface electrode 211 (anode electrode) of the first element 21.

[0055] 3, the fourth terminal lead 171 includes a fourth inner portion 171A and a fourth outer portion 171B. The fourth inner portion 171A is covered with the sealing resin 50. As shown in FIG. 3, the fourth outer portion 171B is connected to the fourth inner portion 171A and is exposed from the third side surface 55 of the sealing resin 50. The fourth outer portion 171B extends in the first direction y away from the first die pad 10A. The surface of the fourth outer portion 171B is plated with, for example, tin.

[0056] 3 , the fourth outer portion 171B includes a fourth base end portion 1711 and a fourth tip end portion 1712. The fourth base end portion 1711 extends in the first direction y from the third side surface 55. The fourth tip end portion 1712 extends in the first direction y from the fourth base end portion 1711. In the illustrated example, the width of the fourth tip end portion 1712 (the dimension along the second direction x) is smaller than the width of the fourth base end portion 1711 (the dimension along the second direction x).

[0057] 3 , the fifth terminal lead 181 is spaced apart from the first die pad 10A in the first direction y. The fifth terminal lead 181 is located between the second terminal lead 15 and the fourth terminal lead 171 in the second direction x. The fifth terminal lead 181 is electrically connected to the main surface electrode 211 (anode electrode) of the first element 21.

[0058] 3, the fifth terminal lead 181 includes a fifth inner portion 181A and a fifth outer portion 181B. The fifth inner portion 181A is covered with the sealing resin 50. As shown in FIG. 3, the fifth outer portion 181B is connected to the fifth inner portion 181A and is exposed from the third side surface 55 of the sealing resin 50. The fifth outer portion 181B extends in the first direction y away from the first die pad 10A. The surface of the fifth outer portion 181B is plated with, for example, tin.

[0059] As shown in FIG. 3 , the fifth terminal lead 181 includes a fifth base end 1811 and a fifth tip end 1812. The fifth base end 1811 extends in the first direction y from the third side surface 55. The fifth tip end 1812 extends in the first direction y from the fifth base end 1811. In the illustrated example, the width of the fifth tip end 1812 (the dimension along the second direction x) is the same as (or approximately the same as) the width of the fifth base end 1811 (the dimension along the second direction x). However, the width of the fifth base end 1811 and the width of the fifth tip end 1812 may be different.

[0060] 3 , the sixth terminal lead 172 is farthest from the second die pad 10B in the first direction y. The sixth terminal lead 172 is located furthest from the other side in the second direction x among the multiple terminal leads 13. The sixth terminal lead 172 is electrically connected to the main surface electrode 222 (anode electrode) of the second element 22.

[0061] As shown in Fig. 3, the sixth terminal lead 172 includes a sixth inner portion 172A and a sixth outer portion 172B. The sixth inner portion 172A is covered with the sealing resin 50. As shown in Fig. 3, the sixth outer portion 172B is connected to the sixth inner portion 172A and is exposed from the sealing resin 50. The sixth outer portion 172B extends in the first direction y away from the second die pad 10B. The surface of the sixth outer portion 172B is plated with, for example, tin.

[0062] 3 , the sixth terminal lead 172 includes a sixth base end 1721 and a sixth tip end 1722. The sixth base end 1721 extends in the first direction y from the third side surface 55. The sixth tip end 1722 extends in the first direction y from the sixth base end 1721. In the illustrated example, the width of the sixth tip end 1722 (the dimension along the second direction x) is smaller than the width of the sixth base end 1721 (the dimension along the second direction x).

[0063] 3 , the seventh terminal lead 182 is spaced apart from the second die pad 10B in the first direction y. The seventh terminal lead 182 is located between the third terminal lead 16 and the sixth terminal lead 172 in the second direction x. The seventh terminal lead 182 is electrically connected to the main surface electrode 221 (anode electrode) of the second element 22.

[0064] As shown in Fig. 3, the seventh terminal lead 182 includes a seventh inner portion 182A and a seventh outer portion 182B. The seventh inner portion 182A is covered with the sealing resin 50. As shown in Fig. 3, the seventh outer portion 182B is connected to the seventh inner portion 182A and is exposed from the third side surface 55 of the sealing resin 50. The seventh outer portion 182B extends in the first direction y away from the second die pad 10B. The surface of the seventh outer portion 182B is plated with, for example, tin.

[0065] As shown in FIG. 3 , the seventh terminal lead 182 includes a seventh base end 1821 and a seventh tip end 1822. The seventh base end 1821 extends in the first direction y from the third side surface 55. The seventh tip end 1822 extends in the first direction y from the seventh base end 1821. In the illustrated example, the width of the seventh tip end 1822 (the dimension along the second direction x) is the same as (or approximately the same as) the width of the seventh base end 1821 (the dimension along the second direction x). However, the width of the seventh base end 1821 and the width of the seventh tip end 1822 may be different.

[0066] 5 , in the semiconductor device A10, the first outer portion 14B, the second outer portion 15B, the third outer portion 16B, the fourth outer portion 171B, the fifth outer portion 181B, the sixth outer portion 172B, and the seventh outer portion 182B all have the same height h. Furthermore, the thicknesses of these portions are also the same. Therefore, when viewed along the second direction x, the first outer portion 14B, the second outer portion 15B, the third outer portion 16B, the fourth outer portion 171B, the fifth outer portion 181B, the sixth outer portion 172B, and the seventh outer portion 182B overlap one another (see FIG. 6 ).

[0067] As shown in FIGS. 2 and 3 , the first connecting bar 191 is spaced apart from the sealing resin 50. The first connecting bar 191 is sandwiched between the first outer portion 14B and the second outer portion 15B in the second direction x. The first connecting bar 191 is formed integrally with the first outer portion 14B and the second outer portion 15B. As shown in FIG. 3 , the first connecting bar 191 is connected to the first base end portion 141 of the first outer portion 14B and to the second base end portion 151 of the second outer portion 15B. With this configuration, the first tip end portion 142 and the second tip end portion 152 extend further to one side in the first direction y than the first connecting bar 191.

[0068] As shown in FIGS. 2 and 3 , the second connecting bar 192 is spaced apart from the sealing resin 50. The second connecting bar 192 is sandwiched between the first outer portion 14B and the third outer portion 16B in the second direction x. The second connecting bar 192 is integrally formed with the first outer portion 14B and the third outer portion 16B. As shown in FIG. 3 , the second connecting bar 192 is connected to the first base end portion 141 of the first outer portion 14B and to the third base end portion 161 of the third outer portion 16B. With this configuration, the first tip end portion 142 and the third tip end portion 162 extend further to one side in the first direction y than the second connecting bar 192. The second connecting bar 192 overlaps the first connecting bar 191 when viewed in the second direction x.

[0069] As shown in FIGS. 2 and 3 , the third connecting bar 193 is spaced from the sealing resin 50. The third connecting bar 193 is sandwiched between the fourth outer portion 171B and the fifth outer portion 181B in the second direction x. The third connecting bar 193 is integrally formed with the fourth outer portion 171B and the fifth outer portion 181B. As shown in FIG. 3 , the third connecting bar 193 is connected to the fourth base end 1711 of the fourth outer portion 171B and also to the fifth base end 1811 of the fifth outer portion 181B. With this configuration, the fourth tip end 1712 and the fifth tip end 1812 extend further toward one side in the first direction y than the third connecting bar 193. The third connecting bar 193 overlaps with the first connecting bar 191 and the second connecting bar 192 when viewed in the second direction x.

[0070] As shown in FIG. 3 , the fourth connecting bar 194 is spaced apart from the sealing resin 50. The fourth connecting bar 194 is sandwiched between the sixth outer portion 172B and the seventh outer portion 182B in the second direction x. The fourth connecting bar 194 is integrally formed with the sixth outer portion 172B and the seventh outer portion 182B. As shown in FIG. 3 , the fourth connecting bar 194 is connected to the sixth base end 1721 of the sixth outer portion 172B and to the seventh base end 1821 of the seventh outer portion 182B. With this configuration, the sixth tip end 1722 and the seventh tip end 1822 extend further toward one side in the first direction y than the fourth connecting bar 194. When viewed in the second direction x, the fourth connecting bar 194 overlaps with each of the first connecting bar 191, the second connecting bar 192, and the third connecting bar 193.

[0071] As shown in FIG. 3 , the first conductive portion 31 electrically connects the principal surface electrode 211 of the first element 21 to the fourth terminal lead 171 and the fifth terminal lead 181. The first conductive portion 31 is a metal plate. The first conductive portion 31 is a metal clip. The composition of the first conductive portion 31 includes, for example, copper. The first conductive portion 31 is covered with a sealing resin 50. The first conductive portion 31 includes three joining portions 311, 312, and 313 and two connecting portions 314 and 315.

[0072] 3, 8, and 9, the bonding portion 311 is bonded to the principal surface electrode 211 of the first element 21. In the illustrated example, the bonding portion 311 has a rectangular shape in a plan view. The area of ​​the bonding portion 311 in a plan view is, for example, 10% to 100% of the area of ​​the principal surface electrode 211 in a plan view.

[0073] 3, the joint portion 312 is joined to the fourth inner portion 171A of the fourth terminal lead 171. In the illustrated example, the joint portion 312 has a rectangular shape in a plan view.

[0074] 3 and 11, the joint portion 313 is joined to the fifth inner portion 181A of the fifth terminal lead 181. In the illustrated example, the joint portion 313 has a rectangular shape in a plan view.

[0075] 3 , the connecting portion 314 is connected to the joint portion 311 and the joint portion 312. The connecting portion 314 is strip-shaped in a plan view. The connecting portion 314 extends linearly from the joint portion 311 to the joint portion 312 in a plan view. The end of the connecting portion 314 connected to the joint portion 311 and the end of the connecting portion 314 connected to the joint portion 312 are each bent downward in the thickness direction z.

[0076] 3 and 11 , the connecting portion 315 is connected to the joint portion 311 and the joint portion 313. The connecting portion 315 is strip-shaped in a plan view. The connecting portion 315 extends linearly from the joint portion 311 to the joint portion 313. The end of the connecting portion 315 connected to the joint portion 311 and the end connected to the joint portion 313 are each bent downward in the thickness direction z.

[0077] In this embodiment, the upper surface of the principal surface electrode 211 and the upper surfaces of the fourth inner portion 171A and the fifth inner portion 181A are located at different heights in the thickness direction z, and therefore, as described above, the two connecting portions 314 and 315 each have a bent portion. Unlike this configuration, in the following cases, each of the two connecting portions 314 and 315 does not need to have a bent portion in the thickness direction z. First, by adjusting the thicknesses (thickness direction z dimensions) of the three joints 311, 312, and 313, each of the two connecting portions 314 and 315 does not need to have a bent portion in the thickness direction z. Second, as long as the principal surface electrode 211 and the fourth inner portion 171A and the fifth inner portion 181A are located at the same height in the thickness direction z, each of the two connecting portions 314 and 315 does not need to have a bent portion in the thickness direction z. In a second example, the first conductive portion 31 is a flat plate.

[0078] As shown in FIG. 3 , the second conductive portion 32 electrically connects the principal surface electrode 221 of the second element 22 to the sixth terminal lead 172 and the seventh terminal lead 182. The second conductive portion 32 is a metal plate. The second conductive portion 32 is a metal clip. The second conductive portion 32 is composed of, for example, copper. The second conductive portion 32 is covered with a sealing resin 50. The second conductive portion 32 includes three joining portions 321, 322, and 323 and two connecting portions 324 and 325.

[0079] 3, 8, and 10, the bonding portion 321 is bonded to the principal surface electrode 221 of the second element 22. In the illustrated example, the bonding portion 321 has a rectangular shape in a plan view. The area of ​​the bonding portion 321 in a plan view is, for example, 10% to 100% of the area of ​​the principal surface electrode 222 in a plan view.

[0080] 3, the joint portion 322 is joined to the sixth inner portion 172A of the sixth terminal lead 172. In the illustrated example, the joint portion 322 has a rectangular shape in a plan view.

[0081] 3 and 12, the joint portion 323 is joined to the seventh inner portion 182A of the seventh terminal lead 182. In the illustrated example, the joint portion 323 has a rectangular shape in a plan view.

[0082] 3, the connecting portion 324 is connected to the joint portion 321 and the joint portion 322. The connecting portion 324 is strip-shaped in a plan view. The connecting portion 324 extends linearly from the joint portion 321 to the joint portion 322 in a plan view. The end of the connecting portion 324 connected to the joint portion 321 and the end of the connecting portion 324 connected to the joint portion 322 are each bent downward in the thickness direction z.

[0083] 3 and 12 , the connecting portion 325 is connected to the joint portion 321 and the joint portion 323. The connecting portion 325 is strip-shaped in a plan view. The connecting portion 325 extends linearly from the joint portion 321 to the joint portion 323 in a plan view. The end of the connecting portion 325 connected to the joint portion 321 and the end connected to the joint portion 323 are each bent downward in the thickness direction z.

[0084] In this embodiment, the upper surface of the principal surface electrode 221 and the upper surfaces of the sixth and seventh inner portions 172A and 182A are located at different heights in the thickness direction z, and therefore, as described above, the two connecting portions 324 and 325 each have a bent portion. In contrast to this configuration, in the following cases, the two connecting portions 324 and 325 each do not have a bent portion in the thickness direction z. First, by adjusting the thicknesses (thickness direction z dimensions) of the three joint portions 321, 322, and 323, the two connecting portions 324 and 325 do not need to have a bent portion in the thickness direction z. Second, as long as the upper surface of the principal surface electrode 221 and the upper surfaces of the sixth and seventh inner portions 172A and 182A are located at the same height in the thickness direction z, the two connecting portions 324 and 325 do not need to have a bent portion in the thickness direction z. In the second example, the second conductive portion 32 is a flat plate.

[0085] 3 and 8 to 12, the semiconductor device A10 further includes a plurality of bonding layers 391, 392, 393, and 394. Each of the plurality of bonding layers 391, 392, 393, and 394 is conductive. Each of the plurality of bonding layers 391, 392, 393, and 394 is made of, for example, solder, but may also be made of sintered metal.

[0086] 3 , 8 and 9 , the bonding layer 391 is interposed between the principal surface electrode 211 of the first element 21 and the bonding portion 311 of the first conductive portion 31. The bonding layer 391 electrically connects the principal surface electrode 211 and the bonding portion 311.

[0087] 3 , 8 and 10 , the bonding layer 392 is interposed between the principal surface electrode 221 of the second element 22 and the bonding portion 321 of the second conductive portion 32. The bonding layer 392 electrically connects the principal surface electrode 221 and the bonding portion 321.

[0088] As shown in Fig. 3 , one of the two bonding layers 393 is interposed between the bonding portion 312 of the first conductive portion 31 and the fourth inner portion 171A. The bonding layer 393 electrically connects the bonding portion 312 and the fourth inner portion 171A. As shown in Fig. 3 and 11 , the other of the two bonding layers 393 is interposed between the bonding portion 313 of the first conductive portion 31 and the fifth inner portion 181A. The bonding layer 393 electrically connects the bonding portion 313 and the fifth inner portion 181A.

[0089] As shown in Fig. 3, one of the two bonding layers 394 is interposed between the bonding portion 322 of the second conductive portion 32 and the sixth inner portion 172A. The bonding layer 394 electrically connects the bonding portion 322 and the sixth inner portion 172A. As shown in Fig. 3 and 12, the other of the two bonding layers 394 is interposed between the bonding portion 323 of the second conductive portion 32 and the seventh inner portion 182A. The bonding layer 394 electrically connects the bonding portion 323 and the seventh inner portion 182A.

[0090] In this embodiment, the thickness t1 of the bonding portion 311 (see FIG. 9) is 0.1 mm or more and is not more than twice the maximum thickness T1max of the bonding layer 391 (see FIG. 9). The maximum thickness T1max of the bonding layer 391 is greater than the thickness of the first element 21. Furthermore, the thickness t2 of the bonding portion 321 (see FIG. 10) is 0.1 mm or more and is not more than twice the maximum thickness T2max of the bonding layer 392 (see FIG. 10). The maximum thickness T2max of the bonding layer 392 is greater than the thickness of the second element 22. Note that, for example, the thickness t1 of the bonding portion 311 and the thickness t2 of the bonding portion 321 are the same value.

[0091] In the semiconductor device A10, the first outer part 14B, the second outer part 15B, the third outer part 16B, the fourth outer part 171B, the fifth outer part 181B, the sixth outer part 172B, and the seventh outer part 182B are mounting terminals for mounting the semiconductor device A10 on a circuit board. The first outer part 14B, the second outer part 15B, and the third outer part 16B are mounting terminals that are electrically connected to both the back surface electrode 213 of the first element 21 and the back surface electrode 223 of the second element 22. The fourth outer part 171B and the fifth outer part 181B are mounting terminals that are electrically connected to the main surface electrode 211 of the first element 21. The sixth outer part 172B and the seventh outer part 182B are mounting terminals that are electrically connected to the main surface electrode 221 of the second element 22.

[0092] 3 , the first inner portion 14A is electrically connected to the back surface electrode 213 of the first element 21 and the back surface electrode 223 of the second element 22 via the first outer portion 14B. That is, the first inner portion 14A is electrically connected to each of the back surface electrodes 213 and 223 via the first outer portion 14B. Specifically, the first inner portion 14A is electrically connected to the back surface electrode 213 of the first element 21 via the first outer portion 14B, the first connecting bar 191, the second outer portion 15B, the second inner portion 15A, and the first die pad 10A. The first inner portion 14A is also electrically connected to the back surface electrode 223 of the second element 22 via the first outer portion 14B, the second connecting bar 192, the third outer portion 16B, the third inner portion 16A, and the second die pad 10B. In this configuration, the conductive paths from the first inner portion 14A to the back surface electrodes 213 and 223 are not connected only inside the sealing resin 50 but also pass outside the sealing resin 50 .

[0093] 3 , the second inner portion 15A is electrically connected to the back surface electrode 213 of the first element 21 without passing through the second outer portion 15B. That is, the second inner portion 15A is electrically connected to the back surface electrode 213 of the first element 21 without passing through the second outer portion 15B. Specifically, the second inner portion 15A is electrically connected to the back surface electrode 213 of the first element 21 via the first die pad 10A. On the other hand, the second inner portion 15A is electrically connected to the back surface electrode 223 of the second element 22 via the second outer portion 15B. That is, the second inner portion 15A is electrically connected to the back surface electrode 223 of the second element 22 via the second outer portion 15B. Specifically, the second inner portion 15A is electrically connected to the back surface electrode 223 of the second element 22 via the second outer portion 15B, the first connecting bar 191, the first outer portion 14B, the second connecting bar 192, the third outer portion 16B, the third inner portion 16A, and the second die pad 10B. In this configuration, the conductive path from the second inner portion 15A to the back surface electrode 213 is connected only inside the sealing resin 50. On the other hand, the conductive path from the second inner portion 15A to the back surface electrode 223 is not connected only inside the sealing resin 50, but passes outside the sealing resin 50.

[0094] 3 , the third inner portion 16A is electrically connected to the back surface electrode 223 of the second element 22 without passing through the third outer portion 16B. That is, the third inner portion 16A is electrically connected to the back surface electrode 223 of the second element 22 without passing through the third outer portion 16B. Specifically, the third inner portion 16A is electrically connected to the back surface electrode 223 of the second element 22 via the second die pad 10B. On the other hand, the third inner portion 16A is electrically connected to the back surface electrode 213 of the first element 21 via the third outer portion 16B. That is, the third inner portion 16A is electrically connected to the back surface electrode 213 of the first element 21 via the third outer portion 16B. Specifically, the third inner portion 16A is electrically connected to the back surface electrode 213 of the first element 21 via the third outer portion 16B, the second connecting bar 192, the first outer portion 14B, the first connecting bar 191, the second outer portion 15B, the second inner portion 15A, and the first die pad 10A. In this configuration, the conductive path from the third inner portion 16A to the back surface electrode 213 is not connected only inside the sealing resin 50, but passes outside the sealing resin 50. On the other hand, the conductive path from the third inner portion 16A to the back surface electrode 223 is connected only inside the sealing resin 50.

[0095] 3, the semiconductor device A10 has a path that does not pass through the fourth outer part 171B for electrical connection between the fourth inner part 171A and the principal surface electrode 211 of the first element 21. In this path, the fourth inner part 171A is electrically connected to the principal surface electrode 211 via a part of the first conductive part 31 (the joint part 312, the connecting part 314, and the joint part 311). Furthermore, as shown in FIG. 3, the semiconductor device A10 also has a path that passes through the fourth outer part 171B for electrical connection between the fourth inner part 171A and the principal surface electrode 211 of the first element 21. In this path, the fourth inner portion 171A is electrically connected to the main surface electrode 211 via the fourth outer portion 171B, the third connecting bar 193, the fifth outer portion 181B, the fifth inner portion 181A, and a part of the first conductive portion 31 (joint portion 313, connecting portion 315, and joint portion 311).

[0096] 3, the semiconductor device A10 has a path that does not go through the fifth outer part 181B for electrical connection between the fifth inner part 181A and the principal surface electrode 211 of the first element 21. In this path, the fifth inner part 181A is electrically connected to the principal surface electrode 211 through a part of the first conductive part 31 (the joint part 313, the connecting part 315, and the joint part 311). Furthermore, as shown in FIG. 3, the semiconductor device A10 also has a path that goes through the fifth outer part 181B for electrical connection between the fifth inner part 181A and the principal surface electrode 211 of the first element 21. In this path, the fifth inner portion 181A is electrically connected to the main surface electrode 211 via the fifth outer portion 181B, the third connecting bar 193, the fourth outer portion 171B, the fourth inner portion 171A, and a part of the first conductive portion 31 (joint portion 312, connecting portion 314, and joint portion 311).

[0097] 3, the semiconductor device A10 has a path that does not pass through the sixth outer portion 172B for electrical connection between the sixth inner portion 172A and the principal surface electrode 221 of the second element 22. In this path, the sixth inner portion 172A is electrically connected to the principal surface electrode 221 via a portion (the joint portion 322, the connecting portion 324, and the joint portion 321) of the second conductive portion 32. Furthermore, as shown in FIG. 3, the semiconductor device A10 also has a path that passes through the sixth outer portion 172B for electrical connection between the sixth inner portion 172A and the principal surface electrode 221 of the second element 22. In this path, the sixth inner portion 172A is electrically connected to the main surface electrode 221 via the sixth outer portion 172B, the fourth connecting bar 194, the seventh outer portion 182B, the seventh inner portion 182A, and a part of the second conductive portion 32 (joint portion 323, connecting portion 325, and joint portion 321).

[0098] 3, the semiconductor device A10 has a path that does not go through the seventh outer part 182B for electrical connection between the seventh inner part 182A and the principal surface electrode 221 of the second element 22. In this path, the seventh inner part 182A is electrically connected to the principal surface electrode 221 through a part (the joint part 323, the connecting part 325, and the joint part 321) of the second conductive part 32. Furthermore, as shown in FIG. 3, the semiconductor device A10 also has a path that goes through the seventh outer part 182B for electrical connection between the seventh inner part 182A and the principal surface electrode 221 of the second element 22. In this path, the seventh inner portion 182A is electrically connected to the main surface electrode 221 via the seventh outer portion 182B, the fourth connecting bar 194, the sixth outer portion 172B, the sixth inner portion 172A, and a part of the second conductive portion 32 (joint portion 322, connecting portion 324, and joint portion 321).

[0099] 17, in the semiconductor device A10 configured as described above, the back electrode 213 of the first element 21 and the back electrode 223 of the second element 22 are electrically connected to each other. Thus, in this embodiment, the semiconductor device A10 forms a circuit in which the cathode electrodes of the two diodes are commonly connected (a cathode-common-connected circuit).

[0100] The functions and effects of the semiconductor device A10 according to the first embodiment are as follows.

[0101] The semiconductor device A10 includes a first terminal lead 14, a second terminal lead 15, a first connecting bar 191, and a sealing resin 50. The sealing resin 50 has a third side surface 55. The first terminal lead 14 includes a first outer portion 14B protruding from the third side surface 55, and the second terminal lead 15 includes a second outer portion 15B protruding from the third side surface 55. The first connecting bar 191 is integrally connected to the first outer portion 14B and the second outer portion 15B. FIG. 18 shows one step in the manufacturing process of the semiconductor device A10. In the state shown in FIG. 18, multiple semiconductor devices A10 in the middle of manufacturing are connected to each other by tie bars 99. In the state shown in FIG. 18, the semiconductor device A10 is manufactured by cutting the hatched (dot-drawn) portions of the tie bars 99. Therefore, the first connecting bar 191 is a remaining portion of the tie bars 99. Therefore, the semiconductor device A10 can effectively use the tie bars 99 to electrically connect the first terminal leads 14 and the second terminal leads 15.

[0102] The semiconductor device A10 further includes a third terminal lead 16 and a second connecting bar 192. The third terminal lead 16 includes a third outer portion 16B protruding from the third side surface 55. The second connecting bar 192 is integrally connected to the first outer portion 14B and the third outer portion 16B. As can be seen from FIG. 18 , the second connecting bar 192 is a remaining portion of the tie bar 99. Therefore, the semiconductor device A10 can effectively use the tie bar 99 to electrically connect the first terminal lead 14 and the third terminal lead 16.

[0103] The semiconductor device A10 includes a fourth terminal lead 171, a fifth terminal lead 181, and a third connecting bar 193. The fourth terminal lead 171 includes a fourth outer portion 171B protruding from the third side surface 55, and the fifth terminal lead 181 includes a fifth outer portion 181B protruding from the third side surface 55. The third connecting bar 193 is integrally connected to the fourth outer portion 171B and the fifth outer portion 181B. As can be seen from FIG. 18 , the third connecting bar 193 is a remaining portion of the tie bar 99. Therefore, the semiconductor device A10 can effectively use the tie bar 99 to electrically connect the fourth terminal lead 171 and the fifth terminal lead 181.

[0104] The semiconductor device A10 includes a sixth terminal lead 172, a seventh terminal lead 182, and a fourth connecting bar 194. The sixth terminal lead 172 includes a sixth outer portion 172B protruding from the third side surface 55, and the seventh terminal lead 182 includes a seventh outer portion 182B protruding from the third side surface 55. The fourth connecting bar 194 is integrally connected to the sixth outer portion 172B and the seventh outer portion 182B. As can be seen from FIG. 18 , the fourth connecting bar 194 is a remaining portion of the tie bar 99. Therefore, the semiconductor device A10 can effectively use the tie bar 99 to electrically connect the sixth terminal lead 172 and the seventh terminal lead 182.

[0105] In the semiconductor device A10, the semiconductor element 20 includes a first element 21 and a second element 22. The first element 21 and the second element 22 are covered with a sealing resin 50. According to this configuration, the semiconductor device A10 has the first element 21 and the second element 22 packaged in a single sealing resin 50. Therefore, the semiconductor device A10 can reduce the mounting area on a circuit board on which the semiconductor device A10 is mounted.

[0106] In the semiconductor device A10, the first terminal lead 14, the second terminal lead 15, and the third terminal lead 16 are electrically connected to the back surface electrode 213 of the first element 21 and the back surface electrode 223 of the second element 22. With this configuration, the first terminal lead 14, the second terminal lead 15, and the third terminal lead 16 serve as common terminals for the back surface electrode 213 of the first element 21 and the back surface electrode 223 of the second element 22. For example, in a configuration in which the first element 21 and the second element 22 are diodes and the back surface electrode 213 and the back surface electrode 223 are cathode electrodes, the semiconductor device A10 forms a common-cathode connected circuit. In other words, the semiconductor device A10 can package a circuit in which two diodes are common-cathode connected.

[0107] In the semiconductor device A10, the fourth inner portion 171A is electrically connected to the principal surface electrode 211 of the first element 21 via a portion of the first conductive portion 31 (joint portion 311, joint portion 312, and connecting portion 314), and the fifth inner portion 181A is electrically connected to the principal surface electrode 211 of the first element 21 via a portion of the first conductive portion 31 (joint portion 311, joint portion 313, and connecting portion 315). Furthermore, the fourth outer portion 171B and the fifth outer portion 181B are integrally formed by the third connecting bar 193. With this configuration, even if either the joint portion 312 or the joint portion 313 peels off, a conductive path between the principal surface electrode 211 and the fourth terminal lead 171 or the fifth terminal lead 181 can be ensured. In other words, the semiconductor device A10 can improve reliability against poor conductivity. Furthermore, with this configuration, the fourth outer part 171B and the fifth outer part 181B are used as mounting terminals that are electrically connected to the principal surface electrodes 211 of the first element 21. Therefore, when the semiconductor device A10 is mounted on a circuit board, the contact area with the circuit board can be increased compared to a case where only one of the fourth outer part 171B and the fifth outer part 181B is a mounting terminal that is electrically connected to the principal surface electrodes 211. Therefore, the semiconductor device A10 can improve heat transfer to the circuit board and increase the bonding strength to the circuit board.

[0108] In the semiconductor device A10, the sixth inner portion 172A is electrically connected to the principal surface electrode 221 of the second element 22 via a portion of the second conductive portion 32 (joint portion 321, joint portion 322, and connecting portion 324), and the seventh inner portion 182A is electrically connected to the principal surface electrode 221 of the second element 22 via a portion of the second conductive portion 32 (joint portion 321, joint portion 323, and connecting portion 325). The sixth outer portion 172B and the seventh outer portion 182B are integrally formed by the fourth connecting bar 194. This configuration ensures a conductive path between the principal surface electrode 221 and the sixth terminal lead 172 or the seventh terminal lead 182, even if either the joint portion 322 or the joint portion 323 peels off. In other words, the semiconductor device A10 has improved reliability against poor conductivity. Furthermore, with this configuration, the sixth outer part 172B and the seventh outer part 182B are used as mounting terminals that are electrically connected to the principal surface electrodes 221 of the second element 22. Therefore, when the semiconductor device A10 is mounted on a circuit board, the contact area with the circuit board can be increased compared to a case where only one of the sixth outer part 172B and the seventh outer part 182B is a mounting terminal that is electrically connected to the principal surface electrodes 221. Therefore, the semiconductor device A10 can improve heat transfer to the circuit board and increase the bonding strength to the circuit board.

[0109] In the semiconductor device A10, the sealing resin 50 has multiple recesses 581. Each of the multiple recesses 581 is recessed from the resin main surface 51 in the thickness direction z. The multiple recesses 581 overlap the first die pad 10A in a plan view. As described above, the multiple recesses 581 are marks formed by fixing the first die pad 10A with multiple pins during the manufacturing of the semiconductor device A10. Therefore, since the first die pad 10A is held down with multiple pins during the manufacturing of the semiconductor device A10, it is possible to suppress the first die pad 10A from wobbling during the manufacturing. This prevents a gap from occurring between the back surface 102 of the first die pad 10A and the mold used to form the sealing resin 50, thereby suppressing the occurrence of resin burrs in the sealing resin 50.

[0110] In the semiconductor device A10, the sealing resin 50 has multiple recesses 582. Each of the multiple recesses 582 is recessed from the resin main surface 51 in the thickness direction z. In a plan view, the multiple recesses 582 overlap the second die pad 10B. As described above, the multiple recesses 582 are marks formed by fixing the second die pad 10B with multiple pins during the manufacturing of the semiconductor device A10. Therefore, since the second die pad 10B is held down by the multiple pins during the manufacturing of the semiconductor device A10, it is possible to prevent the second die pad 10B from wobbling during the manufacturing process. This prevents a gap from occurring between the back surface 102 of the second die pad 10B and the mold used to form the sealing resin 50, thereby preventing resin burrs from occurring in the sealing resin 50.

[0111] In the semiconductor device A10, the area of ​​the bonding portion 311 in a plan view is, for example, 10% to 100% of the area of ​​the principal surface electrode 211 in a plan view. This configuration allows the size of the bonding portion 311 in a plan view to be appropriately adjusted according to the size of the first element 21 in a plan view. Therefore, even if the size of the first element 21 in a plan view is changed, the bonding portion 311 and the principal surface electrode 211 can be appropriately electrically connected. Furthermore, this configuration allows the widths of the connecting portions 314 and 315 of the first conductive portion 31 to be the same even if the sizes of the first elements 21 in a plan view are different between two semiconductor devices A10. In this case, if the connecting portions 314 or 315 are clamped by a transport hand or the like when transporting the first conductive portion 31, adjustment of the transport hand or the like is not required. In other words, even if the sizes of the first elements 21 in a plan view are different between two semiconductor devices A10, a transport device such as a transport hand can be shared, which is advantageous in terms of improving productivity.

[0112] Similarly, in the semiconductor device A10, the area of ​​the bonding portion 321 in a plan view is, for example, 10% to 100% of the area of ​​the principal surface electrode 221 in a plan view. This configuration allows the size of the bonding portion 321 in a plan view to be appropriately adjusted according to the size of the second element 22 in a plan view. Therefore, even if the size of the second element 22 in a plan view is changed, the bonding portion 321 and the principal surface electrode 221 can be appropriately electrically connected. Furthermore, this configuration allows the widths of the connecting portions 324 and 325 of the second conductive portion 32 to be the same even if the sizes of the second elements 22 in a plan view are different between two semiconductor devices A10. In this case, if the connecting portions 324 or 325 are clamped by a transport hand or the like when transporting the second conductive portion 32, adjustment of the transport hand or the like is not required. In other words, even if the sizes of the second elements 22 in a plan view are different between two semiconductor devices A10, a common transport device such as a transport hand can be used, which is advantageous in terms of improving productivity.

[0113] Other embodiments and modifications of the semiconductor device of the present disclosure will be described below. The configurations of the components in each embodiment and each modification can be combined with each other as long as no technical contradiction occurs.

[0114] 19 shows a semiconductor device A11 according to a first modification of the first embodiment. The semiconductor device A11 differs from the semiconductor device A10 in the following respects. First, the shape of the first conductive portion 31 is different. Second, the shape of the second conductive portion 32 is different.

[0115] The first conductive portion 31 of the semiconductor device A11 includes a connecting portion 316 instead of the two connecting portions 314 and 315. The connecting portion 316 is connected to the three joining portions 311, 312, and 313.

[0116] 19 , the connecting portion 316 includes two strip portions 316a and 316b. The strip portion 316a extends in the first direction y. The strip portion 316a is connected to the joint portion 311. The strip portion 316b extends in the second direction x. The strip portion 316b is connected to the strip portion 316a. The strip portion 316b is connected to the joint portion 312 and also to the joint portion 313.

[0117] The second conductive portion 32 of the semiconductor device A11 includes a connecting portion 326 instead of the two connecting portions 324 and 325. The connecting portion 326 is connected to the three joining portions 321, 322, and 323.

[0118] 19 , the connecting portion 326 includes two band-shaped portions 326a and 326b. The band-shaped portion 326a extends in the first direction y. The band-shaped portion 326a is connected to the joint portion 321. The band-shaped portion 326b extends in the second direction x. The band-shaped portion 326b is connected to the band-shaped portion 326a. The band-shaped portion 326b is connected to the joint portion 322 and also to the joint portion 323.

[0119] The semiconductor device A11 shares the following configuration with the semiconductor device A10. That is, in the semiconductor device A11 as well, the first connecting bar 191 is integrally connected to the first terminal lead 14 and the second terminal lead 15. Therefore, the semiconductor device A11 can effectively utilize the tie bar. In addition, the semiconductor device A11 achieves the same effects as the semiconductor device A10 due to the configuration shared with the semiconductor device A10.

[0120] Furthermore, as can be understood from this modification, in the semiconductor device of the present disclosure, the shape of the first conductive portion 31 is not limited in any way as long as it mutually connects the principal surface electrode 211, the fourth inner portion 171A, and the fifth inner portion 181A of the first element 21. Similarly, the shape of the second conductive portion 32 is not limited in any way as long as it mutually connects the principal surface electrode 221, the sixth inner portion 172A, and the seventh inner portion 182A of the second element 22.

[0121] 20 shows a semiconductor device A12 according to a second modification of the first embodiment. The semiconductor device A12 differs from the semiconductor device A10 in the following respects. First, the first conductive portion 31 of the semiconductor device A12 does not include the joint portion 313 or the coupling portion 315. Second, the second conductive portion 32 of the semiconductor device A12 does not include the joint portion 323 or the coupling portion 325.

[0122] The first conductive portion 31 of the semiconductor device A12 does not include the bonding portion 313 or the connecting portion 315. In this configuration, the semiconductor device A12 has only a path via the fifth outer portion 181B for electrical connection between the fifth inner portion 181A and the principal surface electrode 211 of the first element 21. In other words, the electrical connection path from the fifth inner portion 181A to the principal surface electrode 211 does not extend only inside the sealing resin 50, but also passes outside the sealing resin 50.

[0123] Similarly, the second conductive portion 32 of the semiconductor device A12 does not include the bonding portion 323 or the connecting portion 325. In this configuration, the semiconductor device A12 has only a path via the seventh outer portion 182B for electrical connection between the seventh inner portion 182A and the principal surface electrode 221 of the second element 22. In other words, the electrical connection path from the seventh inner portion 182A to the principal surface electrode 221 does not extend only inside the sealing resin 50, but also passes outside the sealing resin 50.

[0124] The semiconductor device A12 shares the following configuration with the semiconductor device A10. That is, in the semiconductor device A12 as well, the first connecting bar 191 is integrally connected to the first terminal lead 14 and the second terminal lead 15. Therefore, the semiconductor device A11 can effectively utilize the tie bar. In addition, the semiconductor device A12 has the same configuration as the semiconductor devices A10 and A11, and therefore achieves the same effects as the semiconductor devices A10 and A11.

[0125] Furthermore, as can be understood from this modification, the semiconductor device of the present disclosure is not limited to the following configuration. First, both the fourth inner portion 171A and the fifth inner portion 181A do not have to be electrically connected to the principal surface electrode 211 of the first element 21, but only inside the sealing resin 50. For example, if the allowable current amount of the first conductive portion 31 can be sufficiently ensured with respect to the current input (or output) to the principal surface electrode 211, the first conductive portion 31 can electrically connect only the fourth inner portion 171A to the principal surface electrode 211, as in the semiconductor device A12. Second, both the sixth inner portion 172A and the seventh inner portion 182A do not have to be electrically connected to the principal surface electrode 221 of the second element 22, but only inside the sealing resin 50.

[0126] In the semiconductor device A12, an example was shown in which the first conductive portion 31 does not include the bonding portion 313 and the connecting portion 315. Unlike this example, the first conductive portion 31 may include two bonding portions 311 and 313 and the connecting portion 315, and may not include the bonding portion 312 and the connecting portion 314. In this case, the conductive path from the fourth inner portion 171A to the principal surface electrode 211 does not connect only inside the sealing resin 50, but passes outside the sealing resin 50. Also, an example was shown in which the second conductive portion 32 does not include the bonding portion 323 and the connecting portion 325. Unlike this example, the second conductive portion 32 may include two bonding portions 321 and 323 and the connecting portion 325, and may not include the bonding portion 322 and the connecting portion 324. In this case, the conductive path from the sixth inner portion 172A to the principal surface electrode 221 does not connect only inside the sealing resin 50, but passes outside the sealing resin 50.

[0127] 21 shows a semiconductor device A13 according to a third modified example of the first embodiment. The semiconductor device A13 differs from the semiconductor device A10 in the following respects. First, the semiconductor device A13 includes a first connection member 41A and a second connection member 42A instead of the first conductive portion 31. Second, the semiconductor device A13 includes a first connection member 41B and a second connection member 42B instead of the second conductive portion 32.

[0128] Each of the pair of first connection members 41A, 41B and the pair of second connection members 42A, 42B is, for example, a bonding wire. Each of the pair of first connection members 41A, 41B and the pair of second connection members 42A, 42B contains gold. Alternatively, each of the pair of first connection members 41A, 41B and the pair of second connection members 42A, 42B may contain copper, aluminum (Al), or silver. Each of the pair of first connection members 41A, 41B and the pair of second connection members 42A, 42B may be a metal clip (a metal plate-shaped member) instead of a bonding wire.

[0129] 21 , the first connecting member 41A is joined to the principal surface electrode 211 of the first element 21 and the fourth inner portion 171A of the fourth terminal lead 171. This provides electrical continuity between the fourth terminal lead 171 and the principal surface electrode 211 of the first element 21. The second connecting member 42A is joined to the principal surface electrode 211 of the first element 21 and the fifth inner portion 181A of the fifth terminal lead 181. This provides electrical continuity between the fifth terminal lead 181 and the principal surface electrode 211 of the first element 21.

[0130] 21 , the first connecting member 41B is joined to the principal surface electrode 221 of the second element 22 and the sixth inner portion 172A of the sixth terminal lead 172. This establishes electrical continuity between the sixth terminal lead 172 and the principal surface electrode 221 of the second element 22. As shown in FIG. 21 , the second connecting member 42B is joined to the principal surface electrode 221 of the second element 22 and the seventh inner portion 182A of the seventh terminal lead 182. This establishes electrical continuity between the seventh terminal lead 182 and the principal surface electrode 221 of the second element 22.

[0131] The semiconductor device A13 shares the following configuration with the semiconductor device A10. That is, in the semiconductor device A13 as well, the first connecting bar 191 is integrally connected to the first terminal lead 14 and the second terminal lead 15. Therefore, the semiconductor device A13 can effectively utilize the tie bar. In addition, the semiconductor device A13 has the same configuration as the semiconductor devices A10 to A12, and therefore achieves the same effects as the semiconductor device A10.

[0132] Furthermore, as can be understood from this modification, the semiconductor device of the present disclosure is not limited to the following configurations. First, the electrical connection between the principal surface electrode 211 of the first element 21 and the fourth inner portion 171A or the fifth inner portion 181A is not limited to the metal clip (first conductive portion 31) but may be a bonding wire (first connecting member 41A and second connecting member 42A). Second, the electrical connection between the principal surface electrode 221 of the second element 22 and the sixth inner portion 172A or the seventh inner portion 182A is not limited to the metal clip (second conductive portion 32) but may be a bonding wire (first connecting member 41B and second connecting member 42B).

[0133] In each of the semiconductor devices A10 to A13, an example has been shown in which the principal surface electrode 211 of the first element 21 is an anode electrode and the back surface electrode 213 of the first element 21 is a cathode electrode, but conversely, the principal surface electrode 211 may be a cathode electrode and the back surface electrode 213 may be an anode electrode. Similarly, in each of the semiconductor devices A10 to A12, an example has been shown in which the principal surface electrode 221 of the second element 22 is an anode electrode and the back surface electrode 223 of the second element 22 is a cathode electrode, but conversely, the principal surface electrode 221 may be a cathode electrode and the back surface electrode 223 may be an anode electrode. In other words, in an example in which the first element 21 and the second element 22 are each a diode, the semiconductor device of the present disclosure is not limited to a circuit in which the cathodes are connected in common, but may also be a circuit in which the anodes are connected in common (anode common connected circuit) or a circuit in which two diodes are connected in series (a circuit in which the cathode electrode of one diode is connected to the anode electrode of the other diode).

[0134] 22 to 25 show a semiconductor device A20 according to the second embodiment. The semiconductor device A20 differs from the semiconductor device A10 in the following respects. First, the second element 22 of the semiconductor device A20 is a transistor rather than a diode. Second, the semiconductor device A20 includes a conductive portion 33 instead of the first conductive portion 31 and the second conductive portion 32. Third, the semiconductor device A20 further includes a first connecting member 41B and a second connecting member 42B. Fourth, the semiconductor device A20 does not include a fourth connecting bar 194.

[0135] In the illustrated example, the second element 22 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), but may also be a bipolar transistor, an IGBT (Insulated Gate Bipolar Transistor), etc. Note that the circuit diagram of Fig. 25 also illustrates a parasitic diode component of the second element 22.

[0136] As shown in FIGS. 22 and 24, the second element 22 of the semiconductor device A20 has a main surface electrode 222 in addition to a main surface electrode 221 and a back surface electrode 223.

[0137] As shown in FIG. 24 , the principal surface electrode 222 is disposed on the second principal surface 22 a together with the principal surface electrode 221. A drive signal for driving the second element 22 is applied to the principal surface electrode 222. In an example in which the second element 22 is a MOSEFT, the principal surface electrode 222 is, for example, a gate electrode, and the drive signal for driving the second element 22 is a gate voltage. In a plan view, the area of ​​the principal surface electrode 222 is smaller than the area of ​​the principal surface electrode 221. The principal surface electrode 221 includes multiple metal plating layers. The principal surface electrode 221 includes a nickel (Ni) plating layer and a gold (Au) plating layer laminated on the nickel plating layer. Alternatively, the principal surface electrode 221 may include a nickel plating layer, a palladium (Pd) plating layer laminated on the nickel plating layer, and a gold plating layer laminated on the palladium plating layer.

[0138] In this embodiment, a current corresponding to the power converted by the second element 22 flows through the principal surface electrode 221, and a current corresponding to the power before being converted by the second element 22 flows through the rear surface electrode 223. In an example in which the second element 22 is a MOSFET, the principal surface electrode 221 is, for example, a source electrode, and the rear surface electrode 223 is, for example, a drain electrode.

[0139] As shown in FIG. 22 , the conductive portion 33 mutually conducts the principal surface electrode 211 of the first element 21, the principal surface electrode 221 of the second element 22, the fourth terminal lead 171, and the fifth terminal lead 181. The conductive portion 33 is a metal plate. The conductive portion 33 is a metal clip. The conductive portion 33 is composed of, for example, copper. The conductive portion 33 is covered with a sealing resin 50. The conductive portion 33 includes four joining portions 331, 332, 333, and 334 and three connecting portions 335, 336, and 337.

[0140] 22 and 23 , the bonding portion 331 is bonded to the principal surface electrode 211 of the first element 21 by a bonding layer 391. In the illustrated example, the bonding portion 331 has a rectangular shape in a plan view. The area of ​​the bonding portion 331 in a plan view is, for example, 10% to 100% of the area of ​​the principal surface electrode 211 in a plan view.

[0141] 22 to 24 , the bonding portion 332 is bonded to the principal surface electrode 221 of the second element 22 by a bonding layer 392. In the example shown, the bonding portion 332 has a rectangular shape in a plan view. The area of ​​the bonding portion 332 in a plan view is, for example, 10% to 100% of the area of ​​the principal surface electrode 221 in a plan view.

[0142] 22, the joint portion 333 is joined to the fourth inner portion 171A of the fourth terminal lead 171 by a joining layer 393. In the illustrated example, the joint portion 333 has a rectangular shape in a plan view.

[0143] 22, the joint portion 334 is joined to the fifth inner portion 181A of the fifth terminal lead 181 by a joining layer 393. In the illustrated example, the joint portion 334 has a rectangular shape in a plan view.

[0144] 22 and 23 , the connecting portion 335 is connected to the joint portion 331 and the joint portion 332. The connecting portion 335 is strip-shaped in a plan view. The connecting portion 335 extends linearly from the joint portion 331 to the joint portion 332 in a plan view. The end of the connecting portion 335 connected to the joint portion 331 and the end of the connecting portion 335 connected to the joint portion 332 are each bent downward in the thickness direction z.

[0145] 22 , the connecting portion 336 is connected to the joint portion 331 and the joint portion 333. The connecting portion 336 is strip-shaped in a plan view. The connecting portion 336 extends linearly from the joint portion 331 to the joint portion 333. The end of the connecting portion 336 connected to the joint portion 331 and the end of the connecting portion 336 connected to the joint portion 333 are each bent downward in the thickness direction z.

[0146] 22 , the connecting portion 337 is connected to the joint portion 331 and the joint portion 334. The connecting portion 337 is strip-shaped in a plan view. The connecting portion 337 extends linearly from the joint portion 331 to the joint portion 334. The end of the connecting portion 337 connected to the joint portion 331 and the end of the connecting portion 337 connected to the joint portion 334 are each bent downward in the thickness direction z.

[0147] 22 , the first connecting member 41B is joined to the principal surface electrode 222 of the second element 22 and the sixth inner portion 172A of the sixth terminal lead 172. This establishes electrical continuity between the sixth terminal lead 172 and the principal surface electrode 222 of the second element 22. The sixth outer portion 172B of the semiconductor device A20 is, for example, a mounting terminal for inputting a drive signal (gate voltage) for the second element 22.

[0148] 22 , the second connection member 42B is joined to the principal surface electrode 221 of the second element 22 and the seventh inner portion 182A of the seventh terminal lead 182. This establishes electrical continuity between the seventh terminal lead 182 and the principal surface electrode 221 of the second element 22. The seventh outer portion 182B of the semiconductor device A20 is, for example, a mounting terminal for detecting the current flowing through (or the voltage applied to) the principal surface electrode 221 of the second element 22.

[0149] In the semiconductor device A20, as described above, different electrical signals flow through the sixth terminal lead 172 and the seventh terminal lead 182. In other words, the sixth terminal lead 172 and the seventh terminal lead 182 have different potentials. For this reason, as described above, the semiconductor device A20 does not include the fourth connecting bar 194. As a result, the sixth terminal lead 172 and the seventh terminal lead 182 are electrically insulated from each other.

[0150] 25 , in the semiconductor device A20 configured as described above, the principal surface electrode 211 (anode electrode) of the first element 21 is electrically connected to the principal surface electrode 221 (source electrode) of the second element 22, and the back surface electrode 213 (cathode electrode) of the first element 21 is electrically connected to the back surface electrode 223 (drain electrode) of the second element 22. In other words, the semiconductor device A20 has a circuit configuration in which a diode and a MOSFET are connected in parallel.

[0151] The semiconductor device A20 shares the following points with the semiconductor device A10. The semiconductor device A20 includes a first connecting bar 191. Therefore, the semiconductor device A20 can effectively utilize the tie bar. In addition, the semiconductor device A20 has a common configuration with the semiconductor device A10, and thus achieves the same effects as the semiconductor device A10. Furthermore, the semiconductor device A20 can integrate a circuit in which a diode and a MOSFET are connected in parallel into a single package.

[0152] 26 to 28 show a semiconductor device A30 according to the third embodiment. The semiconductor device A30 differs from the semiconductor device A10 in the following respects. First, the first element 21 of the semiconductor device A30 is a transistor rather than a diode. Second, the semiconductor device A30 includes a conductive portion 33 instead of the first conductive portion 31 and the second conductive portion 32. Third, the semiconductor device A30 further includes a first connecting member 41A and a second connecting member 42A. Fourth, the semiconductor device A30 does not include a third connecting bar 193.

[0153] In the illustrated example, the first element 21 is a MOSFET. Alternatively, the first element 21 may be a bipolar transistor, an IGBT, or the like. Note that the circuit diagram of FIG. 28 also illustrates a parasitic diode component of the first element 21.

[0154] As shown in FIGS. 26 and 27, the first element 21 of the semiconductor device A30 has a main surface electrode 212 in addition to a main surface electrode 211 and a back surface electrode 213.

[0155] As shown in FIGS. 26 and 27 , the principal surface electrode 212 is disposed on the first principal surface 21 a together with the principal surface electrode 211. A drive signal for driving the first element 21 is applied to the principal surface electrode 212. In an example in which the first element 21 is a MOSEFT, the principal surface electrode 212 is, for example, a gate electrode, and the drive signal for driving the first element 21 is a gate voltage. In a plan view, the area of ​​the principal surface electrode 212 is smaller than the area of ​​the principal surface electrode 211. The principal surface electrode 211 includes multiple metal plating layers. The principal surface electrode 211 includes a nickel (Ni) plating layer and a gold (Au) plating layer laminated on the nickel plating layer. Alternatively, the principal surface electrode 221 may include a nickel plating layer, a palladium (Pd) plating layer laminated on the nickel plating layer, and a gold plating layer laminated on the palladium plating layer.

[0156] In this embodiment, a current corresponding to the power converted by the first element 21 flows through the principal surface electrode 211, and a current corresponding to the power before being converted by the first element 21 flows through the rear surface electrode 213. In an example in which the first element 21 is a MOSFET, the principal surface electrode 211 is, for example, a source electrode, and the rear surface electrode 213 is, for example, a drain electrode.

[0157] 26 , the conductive portion 33 of the semiconductor device A30 mutually conducts the main surface electrode 211 of the first element 21, the main surface electrode 221 of the second element 22, the sixth terminal lead 172, and the seventh terminal lead 182. As shown in FIG. 26 , in the conductive portion 33, the bonding portion 333 is bonded to the sixth inner portion 172A of the sixth terminal lead 172 by a bonding layer 394, and the bonding portion 334 is bonded to the seventh inner portion 182A of the seventh terminal lead 182 by a bonding layer 394.

[0158] 26 , the first connecting member 41A is joined to the principal surface electrode 212 of the first element 21 and the fourth inner portion 171A of the fourth terminal lead 171. This establishes electrical continuity between the fourth terminal lead 171 and the principal surface electrode 212 of the first element 21. The fourth outer portion 171B of the semiconductor device A30 is a mounting terminal for inputting a drive signal (gate voltage) for the first element 21.

[0159] 26 , the second connecting member 42A is joined to the principal surface electrode 211 of the first element 21 and the fifth inner portion 181A of the fifth terminal lead 181. This establishes electrical continuity between the fifth terminal lead 181 and the principal surface electrode 211 of the first element 21. The fifth outer portion 181B of the semiconductor device A30 is a mounting terminal for detecting the current flowing through (or the voltage applied to) the principal surface electrode 211 of the first element 21.

[0160] In the semiconductor device A30, as described above, different electrical signals flow through the fourth terminal lead 171 and the fifth terminal lead 181. In other words, the fourth terminal lead 171 and the fifth terminal lead 181 have different potentials. For this reason, as described above, the semiconductor device A30 does not include the third connecting bar 193. As a result, the fourth terminal lead 171 and the fifth terminal lead 181 are electrically insulated from each other.

[0161] 28 , in the semiconductor device A30 configured as described above, the main surface electrode 211 (source electrode) of the first element 21 and the main surface electrode 221 (anode electrode) of the second element 22 are electrically connected, and the back surface electrode 213 (drain electrode) of the first element 21 and the back surface electrode 223 (cathode electrode) of the second element 22 are electrically connected. In other words, like the semiconductor device A20, the semiconductor device A30 has a circuit configuration in which a diode and a MOSFET are connected in parallel.

[0162] The semiconductor device A30 shares the following points with the semiconductor device A10. The semiconductor device A30 includes a first connecting bar 191. Therefore, the semiconductor device A30 can effectively utilize the tie bar. In addition, the semiconductor device A30 has a configuration in common with the semiconductor devices A10 and A20, and thus achieves the same effects as the semiconductor device A10. Note that, like the semiconductor device A20, the semiconductor device A30 can integrate a circuit in which a diode and a MOSFET are connected in parallel into a single package.

[0163] 29 and 30 show a semiconductor device A40 according to the fourth embodiment. The semiconductor device A40 differs from the semiconductor device A10 in the following respects. First, the first element 21 and the second element 22 of the semiconductor device A40 are transistors rather than diodes. Second, the semiconductor device A40 does not include either the first conductive portion 31 or the second conductive portion 32, but includes a pair of first connecting members 41A, 41B and a pair of second connecting members 42A, 42B. Third, the semiconductor device A40 does not include either the third connecting bar 193 or the fourth connecting bar 194.

[0164] In the illustrated example, the first element 21 and the second element 22 are each a MOSFET. Alternatively, the first element 21 and the second element 22 may be a bipolar transistor and an IGBT, respectively. Note that the circuit diagram of FIG. 30 also illustrates the parasitic diode components of the first element 21 and the second element 22.

[0165] A current corresponding to the power converted by the first element 21 flows through the fifth outer part 181B of the semiconductor device A40. In an example in which the first element 21 is a MOSFET, the fifth outer part 181B of the semiconductor device A40 is a mounting terminal that is electrically connected to the source electrode of the first element 21. Therefore, a relatively larger current flows through the second connection member 42A than through the first connection member 41A. Therefore, as can be seen from FIG. 29 , it is preferable to use a wire with a larger diameter for the second connection member 42A than for the first connection member 41A. Alternatively, it is preferable to use a metal clip for the second connection member 42A instead of a bonding wire.

[0166] A current corresponding to the power converted by the second element 22 flows through the seventh outer part 182B of the semiconductor device A40. In an example in which the second element 22 is a MOSFET, the seventh outer part 182B of the semiconductor device A40 is a mounting terminal that is electrically connected to the source electrode of the second element 22. Therefore, a relatively larger current flows through the second connection member 42B than through the first connection member 41B. Therefore, as can be seen from FIG. 29 , it is preferable to use a wire with a larger diameter for the second connection member 42B than for the first connection member 41B. Alternatively, it is preferable to use a metal clip for the second connection member 42B instead of a bonding wire.

[0167] 30 , in the semiconductor device A40 configured as described above, the back surface electrode 213 (drain electrode) of the first element 21 and the back surface electrode 223 (drain electrode) of the second element 22 are electrically connected. In other words, the semiconductor device A40 forms a circuit in which the drain electrodes of two MOSFETs are commonly connected (a drain-common-connected circuit).

[0168] The semiconductor device A40 shares the following points with the semiconductor device A10. The semiconductor device A40 includes a first connecting bar 191. Therefore, the semiconductor device A40 can effectively utilize the tie bar. In addition, the semiconductor device A40 achieves the same effects as the semiconductor device A10 due to the configuration common to the semiconductor devices A10, A20, and A30. In the semiconductor device A40, in a configuration in which the first element 21 and the second element 22 are MOSFETs and the back electrode 213 and the back electrode 223 are drain electrodes, respectively, a circuit in which two MOSFETs are drain-common-connected can be integrated into a single package.

[0169] As can be seen from the semiconductor devices A10, A20, A30, and A40, the semiconductor device of the present disclosure can be configured in three types of circuits (a circuit in which two MOSFETs are drain-common connected, a circuit in which a MOSFET and a diode are connected in parallel, and a circuit in which two diodes are cathode-common (or anode-common) connected) by combining the first element 21 and the second element 22. Meanwhile, the configurations of the terminal leads 13 and the sealing resin 50 are common to the semiconductor devices A10, A20, A30, and A40. Therefore, the semiconductor device of the present disclosure can be configured in any of the three types of circuits while maintaining substantially the same package appearance. Furthermore, the semiconductor device of the present disclosure can utilize the same configurations of the terminal leads 13 and the sealing resin 50 even if the first element 21 and the second element 22 are transistors or diodes. This allows the semiconductor device of the present disclosure to use a common package structure for any of the three types of circuits, which is advantageous in terms of improving productivity. Furthermore, the semiconductor device of the present disclosure can appropriately form the first connecting bar 191, the second connecting bar 192, the third connecting bar 193, and the fourth connecting bar 194 by adjusting the cut portions of the tie bars, thereby enabling some standardization of the process up to cutting the tie bars.

[0170] 31 shows a semiconductor device A41 according to a first modification of the fourth embodiment. The semiconductor device A41 differs from the semiconductor device A40 in the following respect: the semiconductor device A41 further includes a conductive portion 34.

[0171] The conductive portion 34 electrically connects the principal surface electrode 211 of the first element 21 and the principal surface electrode 221 of the second element 22. This allows electrical continuity between the principal surface electrode 211 (source electrode) of the first element 21 and the principal surface electrode 221 (source electrode) of the second element 22 inside the sealing resin 50. As shown in FIG. 31 , the conductive portion 34 has a strip shape in a plan view. One end of the conductive portion 34 is joined to the principal surface electrode 211 of the first element 21, and the other end of the conductive portion 34 is joined to the principal surface electrode 221 of the second element 22.

[0172] The semiconductor device A41 shares the following configuration with the semiconductor device A40. That is, in the semiconductor device A41 as well, the first connecting bar 191 is integrally connected to the first terminal lead 14 and the second terminal lead 15. Therefore, the semiconductor device A41 can effectively utilize the tie bar. In addition, the semiconductor device A41 achieves the same effects as the semiconductor device A40 due to the configuration shared with the semiconductor device A40.

[0173] In the semiconductor device A41, the principal surface electrode 211 of the first element 21 and the principal surface electrode 221 of the second element 22 are electrically connected via the conductive portion 34. Therefore, the semiconductor device A41 can integrate, into a single package, a circuit in which two MOSFETs are connected in parallel.

[0174] 32 shows a semiconductor device A42 according to a second modified example of the fourth embodiment. The semiconductor device A42 differs from the semiconductor device A40 in the following respects. First, the sealing resin 50 of the semiconductor device A42 includes a first resin member 50A and a second resin member 50B that are spaced apart from each other. Second, the first terminal lead 14 is connected to the first die pad 10A, and the second terminal lead 15 is connected to the second terminal lead 15. Third, the multiple terminal leads 13 do not include a third terminal lead 16.

[0175] The first resin member 50A and the second resin member 50B are arranged along the second direction x. The first resin member 50A covers the first die pad 10A and the first element 21. The second resin member 50B covers the second die pad 10B and the second element 22. The first resin member 50A includes a side surface 55A, and the second resin member 50B includes a side surface 55B. The side surface 55A and the side surface 55B each face one side in the first direction y. In this example, the first outer portion 14B, the fourth terminal lead 171, and the fifth terminal lead 181 each protrude from the side surface 55A of the first resin member 50A. The second outer portion 15B, the sixth terminal lead 172, and the seventh terminal lead 182 each protrude from the side surface 55B of the second resin member 50B. In this modification, the side surface 55A and the side surface 55B are examples of a "resin side surface" as defined in the claims.

[0176] In the semiconductor device A42, the first terminal lead 14 is connected to the first die pad 10A. In this configuration, the first outer portion 14B is electrically connected to the back electrode 213 (drain electrode) of the first element 21 via the first inner portion 14A and the first die pad 10A. In addition, in the semiconductor device A42, the second terminal lead 15 is connected to the second die pad 10B. In this configuration, the second outer portion 15B is electrically connected to the back electrode 223 (drain electrode) of the second element 22 via the second inner portion 15A and the second die pad 10B.

[0177] The semiconductor device A42 shares the following configuration with the semiconductor device A40. That is, in the semiconductor device A42 as well, the first connecting bar 191 is integrally connected to the first terminal lead 14 and the second terminal lead 15. Therefore, the semiconductor device A42 can effectively utilize the tie bar. In addition, the semiconductor device A42 has the same configuration as the semiconductor devices A40 and A41, and therefore achieves the same effects as the semiconductor devices A40 and A41.

[0178] As can be understood from this modification, in the semiconductor device of the present disclosure, the sealing resin 50 may be separated into a first resin member 50A that covers the first element 21 and a second resin member 50B that covers the second element 22. In such a configuration, the two packages can be connected by a first connecting bar 191.

[0179] 33 shows a semiconductor device A43 according to a third modified example of the fourth embodiment. The semiconductor device A43 differs from the semiconductor device A42 in the following respects. First, the fifth terminal lead 181, not the first terminal lead 14, is connected to the first die pad 10A. Second, the seventh terminal lead 182, not the second terminal lead 15, is connected to the second die pad 10B.

[0180] In the semiconductor device A43, the fifth terminal lead 181 is connected to the first die pad 10A. In this configuration, the fifth outer portion 181B is electrically connected to the back surface electrode 213 (drain electrode) of the first element 21 via the fifth inner portion 181A and the first die pad 10A. In addition, in the semiconductor device A43, the seventh terminal lead 182 is connected to the second die pad 10B. In this configuration, the seventh outer portion 182B is electrically connected to the back surface electrode 223 (drain electrode) of the second element 22 via the seventh inner portion 182A and the second die pad 10B.

[0181] In the semiconductor device A43, the first inner portion 14A is electrically connected to the principal surface electrode 211 (source electrode) of the first element 21 via the second connecting member 42A. The second inner portion 15A is electrically connected to the principal surface electrode 221 (source electrode) of the second element 22 via the second connecting member 42B. Therefore, since the first outer portion 14B and the second outer portion 15B are connected by the first connecting bar 191, in the semiconductor device A43, the principal surface electrode 211 of the first element 21 and the principal surface electrode 221 of the second element 22 are electrically connected.

[0182] The semiconductor device A43 shares the following configuration with the semiconductor device A42. That is, in the semiconductor device A43 as well, the first connecting bar 191 is integrally connected to the first terminal lead 14 and the second terminal lead 15. Therefore, the semiconductor device A43 can effectively utilize the tie bar. In addition, the semiconductor device A43 has a configuration in common with the semiconductor devices A40 to A42, and thereby achieves the same effects as the semiconductor devices A40 to A42. Furthermore, the semiconductor device A43 can integrate, into a single package, a circuit in which two MOSFETs are source-common-connected (a circuit in which the source electrodes are commonly connected).

[0183] In the semiconductor device of the present disclosure, the semiconductor element 20 is not limited to a configuration including both the first element 21 and the second element 22, and may be a configuration including only one of the first element 21 and the second element 22. In other words, the semiconductor element 20 may be composed of only the first element 21 or only the second element 22. In this example, the first die pad 10A and the second die pad 10B may be connected to each other and formed integrally. Also, in this example, any of the multiple terminal leads 13 may be a non-connect terminal that is not electrically connected to the semiconductor element 20.

[0184] In the semiconductor device of the present disclosure, the semiconductor element 20 is not limited to a configuration including one first element 21, but may be a configuration including multiple first elements 21. All of the multiple first elements 21 are mounted on the first die pad 10A. Similarly, the semiconductor element 20 is not limited to a configuration including one second element 22, but may be a configuration including multiple second elements 22. All of the multiple second elements 22 are mounted on the second die pad 10B.

[0185] The semiconductor device of the present disclosure can also be applied to other TO (Transistor Outline) packages different from the TO packages exemplified in the first to fourth embodiments (including their variations). Specifically, the semiconductor devices A10, A20, A30, and A40 according to the first to fourth embodiments are extensions of a package structure called TO-247, but may also be extensions of other package structures such as TO-220, TO-252, and TO-263. In other words, the semiconductor device of the present disclosure makes it possible to package a semiconductor element 20 (a first element 21 and a second element 22) using a single sealing resin 50 while maintaining an appearance similar to that of a conventional TO package.

[0186] The semiconductor device according to the present disclosure is not limited to the above-described embodiment. The specific configuration of each part of the semiconductor device according to the present disclosure can be freely modified in various ways. The present disclosure includes the embodiments described in the following appendices. Appendix 1. a semiconductor element; an encapsulating resin having a resin side surface facing one side in a first direction and covering the semiconductor element; a first terminal lead including a first outer portion protruding from the resin side surface in the one side of the first direction; a second terminal lead including a second outer portion protruding from the resin side surface in the one side of the first direction; and a first connecting bar spaced from the encapsulating resin, wherein the first outer portion and the second outer portion are adjacent to each other in a second direction perpendicular to the first direction, the first connecting bar is sandwiched between the first outer portion and the second outer portion in the second direction and is integrally connected to the first outer portion and the second outer portion, the first outer portion includes a first base end portion extending from the resin side surface and a first tip end portion extending from the first base end, the second outer portion includes a second base end portion extending from the resin side surface and a second tip end extending from the second base end, and the first connecting bar is connected to the first base end and the second base end. Supplementary Note 2. The semiconductor device according to Supplementary Note 1, wherein the semiconductor element includes a first element and a second element. Supplementary Note 3. The semiconductor device according to Supplementary Note 2, wherein the first element is either a transistor or a diode, and the second element is either a transistor or a diode. Supplementary Note 4. The semiconductor device according to Supplementary Note 2 or Supplementary Note 3, wherein the sealing resin covers both the first element and the second element. Supplementary Note 5. The semiconductor device according to any of Supplementary Notes 2 to 4, further comprising a third terminal lead including a third outer portion protruding from a side surface of the resin toward one side in the first direction, wherein the second outer portion is adjacent to one side in the second direction relative to the first outer portion, and the third outer portion is adjacent to the other side in the second direction relative to the first outer portion.Appendix 6. The semiconductor device according to Appendix 5, further comprising a second connecting bar spaced apart from the sealing resin, wherein the second connecting bar is sandwiched between the second outer portion and the third outer portion in the second direction and is integrally connected to the second outer portion and the third outer portion. Appendix 7. The semiconductor device according to Appendix 6, wherein the third outer portion includes a third base end portion extending from the resin side surface and a third tip end portion extending from the third base end portion, and the second connecting bar is connected to the first base end portion and the third base end portion. Appendix 8. The semiconductor device according to Appendix 6 or Appendix 7, wherein the first connecting bar and the second connecting bar overlap each other when viewed in the second direction. Appendix 9. The semiconductor device according to any one of Supplementary Note 5 to Supplementary Note 8, wherein the first terminal lead includes a first inner portion covered with the sealing resin, the second terminal lead includes a second inner portion covered with the sealing resin, the third terminal lead includes a third inner portion covered with the sealing resin, the second inner portion is connected to the second outer portion and is electrically connected to the first element without passing through the second outer portion, the third inner portion is connected to the third outer portion and is electrically connected to the second element without passing through the third outer portion, and the first inner portion is connected to the first outer portion and is electrically connected to each of the first element and the second element via the first outer portion. The semiconductor device according to any one of Supplementary Notes 5 to 9, further comprising: a fourth terminal lead including a fourth outer portion protruding from the resin side surface in one direction in the first direction; and a fifth terminal lead including a fifth outer portion protruding from the resin side surface in the one direction in the first direction, wherein the fourth outer portion and the fifth outer portion are each located on the one side in the second direction with respect to the second outer portion.Supplementary Note 11. The semiconductor device according to Supplementary Note 10, further comprising: a third connecting bar separated from the sealing resin, wherein the third connecting bar is sandwiched between the fourth outer portion and the fifth outer portion in the second direction and is integrally connected to the fourth outer portion and the fifth outer portion.Appendix 12. The semiconductor device according to Appendix 11, wherein the fourth outer portion includes a fourth base end extending from the resin side surface and a fourth tip end extending from the fourth base end, the fifth outer portion includes a fifth base end extending from the resin side surface and a fifth tip end extending from the fifth base end, and the third connecting bar is connected to the fourth base end and the fifth base end. Appendix 13. The semiconductor device according to any of Appendix 10 to Appendix 12, wherein the fourth terminal lead includes a fourth inner portion covered with the sealing resin, the fifth terminal lead includes a fifth inner portion covered with the sealing resin, the fourth inner portion is connected to the fourth outer portion and is electrically connected to the first element without passing through the fourth outer portion, and the fifth inner portion is connected to the fifth outer portion and is electrically connected to the first element without passing through the fifth outer portion. Appendix 14. Supplementary Note 15. The semiconductor device according to any one of Supplementary Note 10 to Supplementary Note 13, further comprising: a sixth terminal lead including a sixth outer portion protruding from the resin side surface in one direction in the first direction; and a seventh terminal lead including a seventh outer portion protruding from the resin side surface in one direction in the first direction, wherein the sixth outer portion and the seventh outer portion are each located on the other side in the second direction with respect to the third outer portion. Supplementary Note 16. The semiconductor device according to Supplementary Note 14, further comprising: a fourth connecting bar separated from the sealing resin, wherein the fourth connecting bar is sandwiched between the sixth outer portion and the seventh outer portion in the second direction and is integrally connected to the sixth outer portion and the seventh outer portion. The semiconductor device described in Appendix 15, wherein the sixth outer portion includes a sixth base end portion extending from the resin side surface and a sixth tip end portion extending from the sixth base end portion, the seventh outer portion includes a seventh base end portion extending from the resin side surface and a seventh tip end portion extending from the seventh base end portion, and the fourth connecting bar is connected to the sixth base end portion and the seventh base end portion.Appendix 17. The semiconductor device according to any one of Appendix 14 to Appendix 16, wherein the sixth terminal lead includes a sixth inner portion covered with the sealing resin, the seventh terminal lead includes a seventh inner portion covered with the sealing resin, the sixth inner portion is connected to the sixth outer portion and is electrically connected to the second element without passing through the sixth outer portion, and the seventh inner portion is connected to the seventh outer portion and is electrically connected to the second element without passing through the seventh outer portion. Appendix 18. The semiconductor device according to any one of Appendix 5 to Appendix 17, wherein the second terminal lead includes a first die pad covered with the sealing resin, the first element is mounted on the first die pad, the third terminal lead includes a second die pad covered with the sealing resin, and the second element is mounted on the second die pad. Appendix 19. The semiconductor device according to Appendix 18, wherein the first die pad and the second die pad are arranged in the second direction.

[0187] A10 to A13, A20, A30, A40 to A43: semiconductor device 10A: first die pad 10B: second die pad 101: main surface 102: back surface 109: trace 111: first end face 112: second end face 113: third end face 114: fourth end face 121: first corner end face 122: second corner end face 123: third corner end face 124: fourth corner end face 13: terminal lead 14: first terminal lead 14A: first inner part 14B: first outer part 141: first base end portion 142: first tip end portion 15: second terminal lead 15A: second inner part 15B: second outer part 151: second base end portion 152: second tip end portion 16: third terminal lead 16A: Third inner part 16B: Third outer part 161: Third base end part 162: Third tip part 171: Fourth terminal lead 171A: Fourth inner part 171B: Fourth outer part 1711: Fourth base end part 1712: Fourth tip part 172: Sixth terminal lead 172A: Sixth inner part 172B: Sixth outer part 1721: Sixth base end part 1722: Sixth tip part 181: Fifth terminal lead 181A: Fifth inner part 181B: Fifth outer part 1811: Fifth base end part 1812: Fifth tip part 182: Seventh terminal lead 182A: Seventh inner part 182B: Seventh outer part 1821: Seventh base end part 1822: Seventh tip part 191: First connecting bar 192: Second connecting bar 193: Third connecting bar 194: Fourth connecting bar 20: Semiconductor element 21: First element 21a: First main surface 21b: First back surface 211, 212: Main surface electrodes 213: Back surface electrodes 22: Second element 22a: Second main surface 22b: Second back surface 221, 222: Main surface electrodes 223: Back surface electrodes 231, 232: Die bonding layers 31: First conductive portion 311, 312, 313: Bonding portion 314, 315, 316: Linking portion 316a, 316b: Strip-shaped portion 32: Second conductive portion 321, 322, 323: Bonding portion 324, 325, 326: Linking portion 326a, 326b: Strip-shaped portion 33: Conductive portion 331, 332, 333, 334: Joint portion 335, 336,337: Connecting portion 34: Conductive portion 391, 392, 393, 394: Bonding layer 41A, 41B: First connecting member 42A, 42B: Second connecting member 50: Sealing resin 50A: First resin member 50B: Second resin member 51: Resin main surface 52: Resin back surface 53: First side surface 54: Second side surface 55: Third side surface 55A: Side surface 55B: Side surface 56: Recess 57: Groove portion 581: Recess 582: Recess 589: Trace 99: Tie bar,

Claims

1. A semiconductor element; a sealing resin having a resin side surface facing one side of a first direction and covering the semiconductor element; a first terminal lead including a first outer portion protruding from the resin side surface in the first direction; a second terminal lead including a second outer portion protruding from the resin side surface in the first direction; a first connecting bar spaced apart from the sealing resin; Equipped with The first outer portion and the second outer portion are adjacent to each other in a second direction perpendicular to the first direction, the first connecting bar is sandwiched between the first outer part and the second outer part in the second direction and is integrally connected to the first outer part and the second outer part, the first outer portion includes a first base end portion extending from the resin side surface and a first tip end portion extending from the first base end portion, the second outer portion includes a second base end portion extending from the resin side surface and a second tip end portion extending from the second base end portion, The first connecting bar is connected to the first base end and the second base end.

2. The semiconductor device according to claim 1 , wherein the semiconductor element includes a first element and a second element.

3. the first element is either a transistor or a diode; The semiconductor device according to claim 2 , wherein the second element is either a transistor or a diode.

4. The semiconductor device according to claim 2 , wherein the sealing resin covers both the first element and the second element.

5. a third terminal lead including a third outer portion protruding from the resin side surface to the one side in the first direction; the second outer portion is adjacent to one side of the first outer portion in the second direction, The semiconductor device according to claim 2 , wherein the third outer portion is adjacent to the first outer portion on the other side in the second direction.

6. Further comprising a second connecting bar spaced apart from the encapsulation resin; The semiconductor device according to claim 5 , wherein the second connecting bar is sandwiched between the second outer portion and the third outer portion in the second direction and is integrally connected to the second outer portion and the third outer portion.

7. the third outer portion includes a third base end portion extending from the resin side surface and a third tip end portion extending from the third base end portion, The semiconductor device according to claim 6 , wherein the second connecting bar is connected to the first base end and the third base end.

8. The semiconductor device according to claim 6 , wherein the first connecting bar and the second connecting bar overlap each other when viewed in the second direction.

9. the first terminal lead includes a first inner portion covered with the sealing resin, the second terminal lead includes a second inner portion covered with the sealing resin, the third terminal lead includes a third inner portion covered with the sealing resin, the second inner portion is connected to the second outer portion and is electrically connected to the first element without passing through the second outer portion; the third inner portion is connected to the third outer portion and is electrically connected to the second element without passing through the third outer portion; 9. The semiconductor device according to claim 5, wherein the first inner portion is connected to the first outer portion and is electrically connected to each of the first element and the second element via the first outer portion.

10. a fourth terminal lead including a fourth outer portion protruding from the resin side surface toward the one side in the first direction; a fifth terminal lead including a fifth outer portion protruding from the resin side surface to the one side in the first direction, 9. The semiconductor device according to claim 5, wherein each of the fourth outer portion and the fifth outer portion is located on the one side in the second direction with respect to the second outer portion.

11. Further comprising a third connecting bar spaced apart from the sealing resin; The semiconductor device according to claim 10 , wherein the third connecting bar is sandwiched between the fourth outer portion and the fifth outer portion in the second direction and is integrally connected to the fourth outer portion and the fifth outer portion.

12. the fourth outer portion includes a fourth base end portion extending from the resin side surface and a fourth tip end portion extending from the fourth base end portion, the fifth outer portion includes a fifth base end portion extending from the resin side surface and a fifth tip end portion extending from the fifth base end portion, The semiconductor device according to claim 11 , wherein the third connecting bar is connected to the fourth base end and the fifth base end.

13. the fourth terminal lead includes a fourth inner portion covered with the sealing resin, the fifth terminal lead includes a fifth inner portion covered with the sealing resin, the fourth inner portion is connected to the fourth outer portion and is electrically connected to the first element without passing through the fourth outer portion; The semiconductor device according to claim 10 , wherein the fifth inner portion is connected to the fifth outer portion and is electrically connected to the first element without passing through the fifth outer portion.

14. a sixth terminal lead including a sixth outer portion protruding from the resin side surface toward the one side in the first direction; a seventh terminal lead including a seventh outer portion protruding from the resin side surface to the one side in the first direction, The semiconductor device according to claim 10 , wherein each of the sixth outer portion and the seventh outer portion is located on the other side in the second direction with respect to the third outer portion.

15. Further comprising a fourth connecting bar spaced apart from the encapsulation resin; The semiconductor device according to claim 14 , wherein the fourth connecting bar is sandwiched between the sixth outer portion and the seventh outer portion in the second direction, and is integrally connected to the sixth outer portion and the seventh outer portion.

16. the sixth outer portion includes a sixth base end portion extending from the resin side surface and a sixth tip end portion extending from the sixth base end portion, the seventh outer portion includes a seventh base end portion extending from the resin side surface and a seventh tip end portion extending from the seventh base end portion, The semiconductor device according to claim 15 , wherein the fourth connecting bar is connected to the sixth base end and the seventh base end.

17. the sixth terminal lead includes a sixth inner portion covered with the sealing resin, the seventh terminal lead includes a seventh inner portion covered with the sealing resin, the sixth inner portion is connected to the sixth outer portion and is electrically connected to the second element without passing through the sixth outer portion; The semiconductor device according to claim 14 , wherein the seventh inner portion is connected to the seventh outer portion and is electrically connected to the second element without passing through the seventh outer portion.

18. the second terminal lead includes a first die pad covered with the sealing resin, the first element is mounted on the first die pad, the third terminal lead includes a second die pad covered with the sealing resin, 9. The semiconductor device according to claim 5, wherein the second element is mounted on the second die pad.

19. The semiconductor device according to claim 18 , wherein the first die pad and the second die pad are arranged in the second direction.