Semiconductor device

Abstract

Provided is a semiconductor device comprising: a semiconductor element which comprises a semiconductor layer and a first electrode that is arranged on one side of the semiconductor layer in the thickness direction; a first conduction member which is bonded to the first electrode; another first conduction member which is bonded to the semiconductor element from the other side in the thickness direction; and a sealing resin which has a first resin surface that faces toward the one side in the thickness direction and a second resin surface that faces toward the other side in the thickness direction, and which covers at least a part of each one of the first conduction members. The first electrode comprises a first metal layer that contains a metal which has a higher thermal conductivity than the solder.

Description

Semiconductor Devices

[0001] The present disclosure relates to semiconductor devices.

[0002] Patent Document 1 discloses an example of a conventional semiconductor device. The semiconductor device disclosed in this document includes a conductor, a semiconductor element, a conductive member, and a sealing resin. The semiconductor element is mounted on the conductor. The semiconductor element has electrodes. The conductive member is joined to the electrodes via solder. The sealing resin covers at least a portion of each of the conductor, the semiconductor element, and the conductive member.

[0003] Japanese Patent Application Laid-Open No. 2021-158180

[0004] During operation of a semiconductor device, the semiconductor element repeatedly generates heat. Some of the heat generated in the semiconductor layer of the semiconductor element is dissipated through the solder and conductive members. If the amount of heat transferred per unit time (heat flux) from the semiconductor layer of the semiconductor element to the solder is insufficient, the temperature of the semiconductor element will rise transiently. This temperature rise may impair the proper operation of the semiconductor element.

[0005] An object of the present disclosure is to provide an improved semiconductor device compared to conventional semiconductor devices. In particular, in view of the above-mentioned circumstances, an object of the present disclosure is to provide a semiconductor device that allows semiconductor elements to operate more appropriately.

[0006] A semiconductor device according to one aspect of the present disclosure includes a semiconductor element having a semiconductor layer and a first electrode disposed on a first side in a thickness direction of the semiconductor layer, a first conductive member bonded to the first electrode, a second conductive member bonded to the semiconductor element from a second side in the thickness direction, and a sealing resin having a first resin surface facing the first side in the thickness direction and a second resin surface facing the second side, the sealing resin covering the semiconductor element and at least a portion of each of the first conductive member and the second conductive member. The first electrode includes a first metal layer containing a metal having a thermal conductivity higher than that of solder.

[0007] According to the above configuration, it is possible to provide a semiconductor device that allows semiconductor elements to operate more appropriately.

[0008] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0009] FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a perspective view showing a main portion of the semiconductor device according to the first embodiment of the present disclosure. FIG. 3 is a plan view showing the semiconductor device according to the first embodiment of the present disclosure. FIG. 4 is a plan view showing a main portion of the semiconductor device according to the first embodiment of the present disclosure. FIG. 5 is a bottom view showing the semiconductor device according to the first embodiment of the present disclosure. FIG. 6 is a bottom view showing a main portion of the semiconductor device according to the first embodiment of the present disclosure. FIG. 7 is a side view showing the semiconductor device according to the first embodiment of the present disclosure. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 4. FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 4. FIG. 10 is a cross-sectional view showing a main portion of a first embodiment of a bonded structure included in the semiconductor device according to the present disclosure. FIG. 11 is a cross-sectional view showing a main portion of an example of a bonded structure included in the semiconductor device according to the first embodiment of the present disclosure. FIG. 12 is a cross-sectional view showing a main portion of another example of a bonded structure included in the semiconductor device according to the first embodiment of the present disclosure. FIG. 13 is a cross-sectional view showing a main portion of another example of a bonded structure included in the semiconductor device according to the first embodiment of the present disclosure. FIG. 14 is a cross-sectional view of a main portion schematically illustrating another example of a joint structure included in the semiconductor device according to the first embodiment of the present disclosure. FIG. 15 is a cross-sectional view of a first modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. 16 is a perspective view of a semiconductor device according to a second embodiment of the present disclosure. FIG. 17 is a perspective view of a main portion of the semiconductor device according to the second embodiment of the present disclosure. FIG. 18 is a plan view of a semiconductor device according to the second embodiment of the present disclosure. FIG. 19 is a plan view of a main portion of the semiconductor device according to the second embodiment of the present disclosure. FIG. 20 is a bottom view of a semiconductor device according to the second embodiment of the present disclosure. FIG. 21 is a bottom view of a main portion of the semiconductor device according to the second embodiment of the present disclosure. FIG. 22 is a cross-sectional view taken along line XXII-XXII in FIG. 21. FIG. 23 is a cross-sectional view taken along line XXIII-XXIII in FIG. 21. FIG. 24 is a cross-sectional view of a first modified example of the semiconductor device according to the second embodiment of the present disclosure. FIG. 25 is a cross-sectional view of a second modified example of the semiconductor device according to the second embodiment of the present disclosure.

[0010] Preferred embodiments of the present disclosure will now be described in detail with reference to the drawings.

[0011] The terms "first," "second," "third," etc. in this disclosure are used for identification purposes only and are not intended to impose any ranking on their objects.

[0012] In this disclosure, unless otherwise specified, "a certain object A is formed on a certain object B" and "a certain object A is formed on a certain object B" include "a certain object A is formed directly on a certain object B" and "a certain object A is formed on a certain object B with another object interposed between the certain object A and the certain object B." Similarly, "a certain object A is disposed on a certain object B" and "a certain object A is disposed on a certain object B" include "a certain object A is disposed directly on a certain object B" and "a certain object A is disposed on a certain object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is located on a certain object B" includes "a certain object A is located on a certain object B with a certain object A in contact with the certain object B" and "a certain object A is located on a certain object B with another object interposed between the certain object A and the certain object B." Furthermore, unless otherwise specified, the phrase "an object A overlaps an object B when viewed in a certain direction" includes "an object A overlaps the entire object B" and "an object A overlaps a part of an object B." Furthermore, in the present disclosure, "a surface A faces in direction B (either a first side of the direction B or a second side opposite the first side)" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is tilted with respect to direction B.

[0013] 1 to 10 show a semiconductor device according to a first embodiment of the present disclosure. The semiconductor device A1 of this embodiment includes a semiconductor element 1, a first conductive member 2, a second conductive member 3, a third conductive member 4, a first bonding layer 7, a second bonding layer 8, and a sealing resin 9. The use of the semiconductor device A1 is not limited in any way, and it may be used in electronic devices including a power conversion circuit, such as a DC-DC converter.

[0014] FIG. 1 is a perspective view showing the semiconductor device A1. FIG. 2 is a perspective view of a main part of the semiconductor device A1. FIG. 3 is a plan view of the semiconductor device A1. FIG. 4 is a plan view of a main part of the semiconductor device A1. FIG. 5 is a bottom view of the semiconductor device A1. FIG. 6 is a bottom view of a main part of the semiconductor device A1. FIG. 7 is a side view of the semiconductor device A1. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 4. FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 4. FIG. 10 is a cross-sectional view of a main part schematically showing an example of a joining structure included in the semiconductor device A1.

[0015] In these figures, the thickness direction of the present disclosure is defined as thickness direction z. A first side of thickness direction z is referred to as z1 side, and a second side opposite the first side in the z direction is referred to as z2 side. A direction perpendicular to thickness direction z is defined as first direction x. A first side of first direction x is referred to as x1 side, and a second side opposite the x1 side is referred to as x2 side. A direction perpendicular to thickness direction z and first direction x is defined as second direction y. A first side of second direction y is referred to as y1 side, and a second side opposite the y1 side is referred to as y2 side.

[0016] The semiconductor element 1 is, for example, a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). Alternatively, the semiconductor element 1 may be a switching element such as an IGBT (Insulated Gate Bipolar Transistor) or a diode. In the description of the semiconductor device A1, the semiconductor element 1 is an n-channel MOSFET with a vertical structure. As shown in FIGS. 2, 4, and 8 to 10, the semiconductor element 1 has a semiconductor layer 10, a first electrode 11, a second electrode 12, and a third electrode 13.

[0017] 10 schematically illustrates a bonded structure B1 included in a semiconductor device A1. The bonded structure B1 has a structure in which a semiconductor element 1, a first conductive member 2, a second conductive member 3, a first bonding layer 7, and a second bonding layer 8 are bonded to one another. For ease of understanding, the figure illustrates the first conductive member 2 and the second conductive member 3 as extending beyond the semiconductor element 1 in a plane including the first direction x and the second direction y. Furthermore, the fifth conductive member 6 and the first bonding layer 7 are illustrated as having a trapezoidal cross section that bonds the semiconductor element 1 to the first conductive member 2 or the second conductive member 3.

[0018] The semiconductor layer 10 is a layer containing a semiconductor. The composition of the semiconductor contains, for example, silicon (Si), silicon carbide (SiC), etc. Furthermore, unlike the present embodiment, when the semiconductor element 1 is a switching element with a lateral structure, the semiconductor layer 10 contains, for example, gallium nitride (GaN).

[0019] 10 , the first electrode 11 is disposed on the z1 side in the thickness direction z of the semiconductor layer 10. A current corresponding to the power converted by the semiconductor element 1 flows through the first electrode 11. In other words, the first electrode 11 corresponds to the source electrode of the semiconductor element 1.

[0020] 10 , the second electrode 12 is disposed on the z2 side in the thickness direction z of the semiconductor layer 10. A current corresponding to the power before being converted by the semiconductor element 1 flows through the second electrode 12. In other words, the second electrode 12 corresponds to the drain electrode of the semiconductor element 1.

[0021] 2 , the third electrode 13 is disposed on the same z1 side as the first electrode 11 in the thickness direction z. A gate voltage for driving the semiconductor element 1 is applied to the third electrode 13. That is, the third electrode 13 corresponds to the gate electrode of the semiconductor element 1. When viewed in the thickness direction z, the area of ​​the third electrode 13 is smaller than the area of ​​the first electrode 11.

[0022] As shown in FIG. 10 , the first electrode 11 includes a first metal layer 111, a second metal layer 112, a first intermediate metal layer 113, and a first barrier metal layer 114. The first metal layer 111 includes a metal having a higher thermal conductivity than solder. Preferably, the first metal layer 111 is primarily composed of a metal having a higher thermal conductivity than solder. The first metal layer 111 includes, for example, Ag (silver) or Cu (copper). In the following description, the first metal layer 111 is primarily composed of Ag (silver). Specific examples of the first metal layer 111 primarily composed of Ag (silver) include an Ag (silver) sintered layer, an Ag (silver) paste layer, an Ag (silver) layer formed by a film formation technique such as sputtering, and an Ag (silver) plated layer. In the illustrated example, the first metal layer 111 forms a surface layer of the first electrode 11.

[0023] The second metal layer 112 is interposed between the semiconductor layer 10 and the first metal layer 111. The second metal layer 112 is a layer containing, for example, Al (aluminum).

[0024] There are no limitations on the thickness t111 of the first metal layer 111 or the thickness t112 of the second metal layer 112. In this embodiment, the thickness t111 is greater than the thickness t112. The thickness t111 is, for example, not less than 5 μm and not more than 40 μm. The thickness t112 is, for example, not less than 2 μm and not more than 8 μm.

[0025] The first intermediate metal layer 113 is interposed between the first metal layer 111 and the second metal layer 112. The first intermediate metal layer 113 includes, for example, Ti (titanium), Ni (nickel), or the like. The thickness of the first intermediate metal layer 113 is, for example, 0.1 μm or more and 0.6 μm or less. The first intermediate metal layer 113 is a layer that prevents the second metal layer 112 from being damaged when the first metal layer 111 is formed on the second metal layer 112, for example.

[0026] The first barrier metal layer 114 is interposed between the second metal layer 112 and the semiconductor layer 10. The first barrier metal layer 114 contains, for example, TiN (titanium nitride). The thickness of the first barrier metal layer 114 is, for example, not less than 0.01 μm and not more than 0.1 μm. The first barrier metal layer 114 is a layer that prevents the semiconductor layer 10 from being damaged, for example, when the second metal layer 112 is formed on the semiconductor layer 10.

[0027] The second electrode 12 of this embodiment includes a fourth metal layer 122 and a second barrier metal layer 124. The fourth metal layer 122 is a layer containing, for example, Al (aluminum). In this embodiment, the fourth metal layer 122 forms a surface layer of the second electrode 12. There are no limitations on the thickness of the fourth metal layer 122, and it may be the same as or different from the thickness t112 of the second metal layer 112.

[0028] The second barrier metal layer 124 is interposed between the fourth metal layer 122 and the semiconductor layer 10. The second barrier metal layer 124 contains, for example, TiN (titanium nitride). The thickness of the second barrier metal layer 124 is, for example, not less than 0.01 μm and not more than 0.1 μm. The second barrier metal layer 124 is a layer for preventing the semiconductor layer 10 from being damaged when, for example, the fourth metal layer 122 is formed on the semiconductor layer 10.

[0029] The first conductive member 2 includes a portion disposed on the z1 side in the thickness direction z with respect to the semiconductor element 1. The first conductive member 2 includes a conductive material such as a metal, for example, Cu (copper).

[0030] As shown in FIGS. 1 to 10 , the first conductive member 2 has a first main surface 201 and a second main surface 202. The first main surface 201 faces the z1 side in the thickness direction z. The second main surface 202 faces the z2 side in the thickness direction z. The semiconductor element 1 is conductively joined to the second main surface 202. As shown in FIGS. 8 and 9 , in this example, the first main surface 201 is covered with a sealing resin 9.

[0031] As shown in FIGS. 1 to 9, the first conductive member 2 has a first island portion 211 , a plurality of first terminal portions 212 , and a recessed portion 221 .

[0032] The first island portion 211 is a portion that is conductively joined to the semiconductor element 1. The first island portion 211 includes a part of the first main surface 201 and a part of the second main surface 202. The shape and size of the first island portion 211 are not limited in any way, and in the illustrated example, the first island portion 211 has a shape that overlaps the entire first electrode 11 when viewed in the thickness direction z, and also has a shape that exposes the third electrode 13.

[0033] The multiple first terminals 212 are connected to the first island portion 211 on the y2 side in the second direction y. The multiple first terminals 212 each extend in the second direction y as viewed in the thickness direction z and are arranged at intervals in the first direction x. The number of the multiple first terminals 212 is not limited and may be three, as in the illustrated example, or two, or four or more. Alternatively, a configuration including only one first terminal 212 may be provided. As shown in FIGS. 1 , 2 , and 8 , the first terminal 212 includes a portion connected to the first island portion 211 and covered by the sealing resin 9, a portion protruding from the sealing resin 9 toward the y2 side in the second direction y, a portion folded back toward the z2 side in the thickness direction z, and a portion located on the z2 side in the thickness direction z. The multiple first terminals 212 are used as terminals when mounting the semiconductor device A1.

[0034] The recess 221 is a portion recessed toward the z2 side in the thickness direction z from the first main surface 201. The recess 221 overlaps with the first island portion 211 when viewed in the thickness direction z.

[0035] 10 , in this example, the first conductive member 2 includes a first base material 21 and a first plating layer 22. The first base material 21 is the main component of the first conductive member 2 and contains, for example, Cu (copper). The first plating layer 22 is formed in an appropriate position on the first base material 21 and contains, for example, Ag (silver). In this example, the first plating layer 22 is provided at least in a location that is bonded to the semiconductor element 1 by the first bonding layer 7.

[0036] The first bonding layer 7 electrically connects the first electrode 11 of the semiconductor element 1 to the second main surface 202 of the first conductive member 2. In this example, the first bonding layer 7 electrically connects the first metal layer 111 to the first plating layer 22. The specific configuration of the first bonding layer 7 is not limited, and it may be made of a conductive bonding material such as solder or Ag (silver) plating. The thickness t7 of the first bonding layer 7 is not limited, and in this embodiment, it is thinner than the thickness t111 of the first metal layer 111. The thickness t7 is, for example, 4 μm or more and 30 μm or less.

[0037] The second conductive member 3 is disposed on the z2 side in the thickness direction z with respect to the semiconductor element 1. The second conductive member 3 includes a conductive material such as a metal, for example, Cu (copper).

[0038] As shown in FIGS. 1 to 10 , the second conductive member 3 has a third main surface 301 and a fourth main surface 302. The third main surface 301 is a surface facing the z1 side in the thickness direction z. The fourth main surface 302 is a surface facing the z2 side in the thickness direction z. The semiconductor element 1 is mounted on the third main surface 301. As shown in FIGS. 5 and 6 , the fourth main surface 302 is exposed from the sealing resin 9.

[0039] As shown in FIGS. 1 to 9, the second conductive member 3 has a second island portion 311 , a second terminal portion 312 , a thin extending portion 321 and a through hole 322 .

[0040] The second island portion 311 is a portion on which the entire or part of the semiconductor element 1 is mounted. The second island portion 311 includes a part of the third main surface 301 and a part of the fourth main surface 302. The shape and size of the second island portion 311 are not limited in any way, and in the illustrated example, it is substantially rectangular when viewed in the thickness direction z.

[0041] The second terminal portion 312 is a portion connected to the y1 side of the second island portion 311 in the second direction y. The second terminal portion 312 includes a part of the third main surface 301 and a part of the fourth main surface 302. The second terminal portion 312 may be used as a terminal when mounting the semiconductor device A1.

[0042] The thin-walled extending portion 321 is a portion that includes the third main surface 301 but does not include the fourth main surface 302. The thickness of the thin-walled extending portion 321 in the thickness direction z is thinner than the thickness of the second island portion 311 in the thickness direction z. The thin-walled extending portion 321 extends from the second island portion 311. In the illustrated example, the thin-walled extending portion 321 extends from the second island portion 311 to the x1 side and x2 side in the first direction x and to the y2 side in the second direction y.

[0043] The through hole 322 penetrates the second conductive member 3 in the thickness direction z. In this embodiment, the through hole 322 is filled with a portion of the sealing resin 9. The size of the cross section of the through hole 322 perpendicular to the thickness direction z is larger on the z2 side in the thickness direction z than on the z1 side. This has the effect of preventing the second conductive member 3 from falling off from the sealing resin 9, for example.

[0044] 10 , in this example, the second conductive member 3 includes a second base material 31 and a second plating layer 32. The second base material 31 is the main component of the second conductive member 3 and contains, for example, Cu (copper). The second plating layer 32 is formed in an appropriate position on the second base material 31 and contains, for example, Ag (silver). In this example, the second plating layer 32 is provided at least in a location that is bonded to the semiconductor element 1 by the second bonding layer 8.

[0045] The second bonding layer 8 electrically connects the second electrode 12 of the semiconductor element 1 to the third main surface 301 of the second conductive member 3. In this example, the second bonding layer 8 electrically connects the fourth metal layer 122 to the second plating layer 32. The specific configuration of the second bonding layer 8 is not limited in any way, and it may be made of a conductive bonding material such as solder or Ag (silver) plating. Note that, unlike this embodiment, if the semiconductor element 1 does not have the second electrode 12 on the z2 side in the thickness direction z, the second bonding layer 8 may simply connect the semiconductor element 1 and the second conductive member 3 without electrically connecting them to each other.

[0046] The third conductive member 4 includes a portion disposed on the z1 side in the thickness direction z with respect to the semiconductor element 1. The third conductive member 4 includes a conductive material such as a metal, for example, Cu (copper).

[0047] As shown in FIGS. 2 to 7, the third conductive member 4 has a pad portion 411 and a third terminal portion 412 .

[0048] The pad portion 411 is a portion that is conductively joined to the third electrode 13 of the semiconductor element 1. The shape and size of the pad portion 411 are not limited in any way, and in the example shown, the pad portion 411 has a shape that overlaps with a part of the third electrode 13 when viewed in the thickness direction z. The pad portion 411 is conductively joined to the third electrode 13 by solder or the like (not shown).

[0049] The third terminal 412 is connected to the pad 411 on the y2 side in the second direction y. The third terminal 412 extends in the second direction y when viewed in the thickness direction z. As shown in FIGS. 1, 2, and 7, the third terminal 412 has a portion connected to the pad 411 and covered with the sealing resin 9, a portion protruding from the sealing resin 9 toward the y2 side in the second direction y, a portion folded back toward the z2 side in the thickness direction z, and a portion located on the z2 side in the thickness direction z. When viewed in the first direction x, the third terminal 412 has a shape and size that generally overlaps with the first terminal 212. The third terminal 412 is used as a terminal when mounting the semiconductor device A1.

[0050] The sealing resin 9 covers the semiconductor element 1 and a portion of each of the first conductive member 2, the second conductive member 3, and the third conductive member 4. The sealing resin 9 has electrical insulation properties. The sealing resin 9 includes, for example, a black epoxy resin containing a filler. The shape of the sealing resin 9 is not limited in any way. As shown in FIGS. 1 to 9 , the sealing resin 9 of this embodiment has a first resin surface 91, a second resin surface 92, a third resin surface 93, a fourth resin surface 94, a fifth resin surface 95, and a sixth resin surface 96.

[0051] The first resin surface 91 is a surface facing the z1 side in the thickness direction z. The second resin surface 92 is a surface facing the z2 side in the thickness direction z. A fourth main surface 302 of the second conductive member 3 is exposed from the second resin surface 92. In the illustrated example, the first resin surface 91 and the second resin surface 92 are flat surfaces, but are not limited to this and may be curved or bent surfaces, for example. In the illustrated example, the second resin surface 92 and the fourth main surface 302 are flush with each other.

[0052] The third resin surface 93 faces the x1 side in the first direction x. The fourth resin surface 94 faces the x2 side in the first direction x. In the illustrated example, the third resin surface 93 and the fourth resin surface 94 are slightly curved surfaces, but are not limited to this and may be curved surfaces or flat surfaces, for example.

[0053] The fifth resin surface 95 is a surface facing the y1 side in the second direction y. The sixth resin surface 96 is a surface facing the y2 side in the second direction y. In the illustrated example, the fifth resin surface 95 and the sixth resin surface 96 are slightly curved surfaces, but this is not limited thereto and may be, for example, a curved surface or a flat surface. In this embodiment, a plurality of first terminals 212 and a plurality of third terminals 412 protrude from the sixth resin surface 96.

[0054] Next, the operation of the semiconductor device A1 will be described.

[0055] According to this embodiment, as shown in FIG. 10 , the first electrode 11 includes a first metal layer 111. The first metal layer 111 includes a metal having a higher thermal conductivity than solder. As a result, when the semiconductor layer 10 of the semiconductor element 1 repeatedly generates heat during operation of the semiconductor device A1, this heat is quickly transferred from the semiconductor layer 10 to the first metal layer 111, thereby increasing the heat flux of heat dissipation from the semiconductor layer 10. This prevents excessive transient increases in the temperature of the semiconductor layer 10, allowing the semiconductor element 1 to operate more appropriately. In particular, when the semiconductor element 1 is a vertical-structure switching element, significant heat is generated in a portion of the semiconductor layer 10 located on the z1 side in the thickness direction z during operation of the semiconductor device A1. Providing the first metal layer 111 is a reasonable measure to suppress this tendency for temperature rise due to heat generation.

[0056] The first metal layer 111 contains Ag (silver), which can further increase the heat flux of heat dissipation from the semiconductor layer 10. The first metal layer 111 containing Ag (silver) as a main component is preferable for increasing the heat flux. A configuration in which the first metal layer 111 is, for example, an Ag (silver) sintered layer is suitable for finishing the first metal layer 111 into a desired shape and thickness.

[0057] The thickness t111 of the first metal layer 111 is greater than the thickness t112 of the second metal layer 112. This allows heat from the semiconductor layer 10 to be conducted more quickly to the first metal layer 111 via the second metal layer 112. Furthermore, the thickness t7 of the first bonding layer 7 is less than the thickness t111 of the first metal layer 111. This allows the heat conducted to the first metal layer 111 to be conducted more efficiently to the first conductive member 2, which is preferable for promoting heat dissipation from the semiconductor layer 10.

[0058] 11 to 25 show modified examples and other embodiments of the present disclosure. In these figures, elements that are the same as or similar to those in the above-described embodiment are given the same reference numerals. Furthermore, the configurations of the various parts in each modified example and each embodiment can be combined with each other as appropriate within the scope of not causing technical contradictions.

[0059] 11 to 14 are schematic diagrams illustrating other examples of the bonded structure included in the semiconductor device A1. The bonded structure B1 described above and various bonded structures including the bonded structures B2 to B5 described below can be appropriately employed in various semiconductor devices including the semiconductor device A1 and the semiconductor devices described below.

[0060] The bonded structure B2 shown in FIG. 11 differs from the bonded structure B1 described above mainly in the configuration of the second electrode 12. The second electrode 12 of this example includes a third metal layer 121, a fourth metal layer 122, a second intermediate metal layer 123, and a second barrier metal layer 124. The third metal layer 121 includes a metal having a higher thermal conductivity than solder. Preferably, the third metal layer 121 is primarily composed of a metal having a higher thermal conductivity than solder. The third metal layer 121 includes, for example, Ag (silver) or Cu (copper). The following description will be given assuming that the third metal layer 121 is primarily composed of Ag (silver). Specific examples of the third metal layer 121 primarily composed of Ag (silver) include an Ag (silver) sintered layer, an Ag (silver) paste layer, an Ag (silver) layer formed by a film formation technique such as sputtering, and an Ag (silver) plated layer. In the illustrated example, the third metal layer 121 forms the surface layer of the second electrode 12 .

[0061] The fourth metal layer 122 is interposed between the semiconductor layer 10 and the third metal layer 121. The fourth metal layer 122 is a layer containing, for example, Al (aluminum).

[0062] There are no limitations on the thickness t121 of the third metal layer 121 or the thickness t122 ​​of the fourth metal layer 122. In this embodiment, the thickness t121 is thicker than the thickness t122. The thickness t121 is, for example, not less than 5 μm and not more than 10 μm. The thickness t122 ​​is, for example, not less than 2 μm and not more than 8 μm.

[0063] The second intermediate metal layer 123 is interposed between the third metal layer 121 and the fourth metal layer 122. The second intermediate metal layer 123 includes, for example, Ti (titanium), Ni (nickel), or the like. The thickness of the second intermediate metal layer 123 is, for example, 0.1 μm or more and 0.6 μm or less. The second intermediate metal layer 123 is a layer that prevents the fourth metal layer 122 from being damaged when the third metal layer 121 is formed on the fourth metal layer 122, for example.

[0064] The second barrier metal layer 124 is interposed between the fourth metal layer 122 and the semiconductor layer 10. The second barrier metal layer 124 contains, for example, TiN (titanium nitride). The thickness of the second barrier metal layer 124 is, for example, not less than 0.01 μm and not more than 0.1 μm. The second barrier metal layer 124 is a layer for preventing the semiconductor layer 10 from being damaged when, for example, the fourth metal layer 122 is formed on the semiconductor layer 10.

[0065] The second bonding layer 8 has a similar configuration to the second bonding layer 8 of the above-described bonded structure B1. The thickness t8 of the second bonding layer 8 is not limited in any way, and in this embodiment, it is thinner than the thickness t121 of the third metal layer 121. The thickness t8 is, for example, not less than 5 μm and not more than 30 μm.

[0066] This example also makes it possible to increase the heat flux of heat dissipation from the semiconductor element 1, allowing the semiconductor element 1 to operate more appropriately. Furthermore, according to this example, the second electrode 12 includes a third metal layer 121. The third metal layer 121 includes a metal with a higher thermal conductivity than solder. As a result, when the semiconductor layer 10 of the semiconductor element 1 repeatedly generates heat during operation of the semiconductor device A1, this heat is quickly transferred from the semiconductor layer 10 to the third metal layer 121, making it possible to increase the heat flux of heat dissipation from the semiconductor layer 10. This further prevents the temperature of the semiconductor layer 10 from rising excessively transiently.

[0067] The third metal layer 121 containing Ag (silver) can further increase the heat flux of heat dissipation from the semiconductor layer 10. The third metal layer 121 containing Ag (silver) as a main component is preferable for increasing the heat flux. The configuration in which the third metal layer 121 is, for example, an Ag (silver) sintered layer is suitable for finishing the third metal layer 121 into a desired shape and thickness.

[0068] The thickness t121 of the third metal layer 121 is greater than the thickness t122 ​​of the fourth metal layer 122. This allows heat from the semiconductor layer 10 to be conducted more quickly to the third metal layer 121 via the fourth metal layer 122. Furthermore, the thickness t8 of the second bonding layer 8 is less than the thickness t121 of the third metal layer 121. This allows the heat conducted to the third metal layer 121 to be conducted more efficiently to the second conductive member 3, which is preferable for promoting heat dissipation from the semiconductor layer 10.

[0069] 12 differs from the above-described junction structure B2 mainly in the configuration of the first electrode 11. The first electrode 11 of this example includes a first metal layer 111 and a first barrier metal layer 114, and the first metal layer 111 is formed on the first barrier metal layer 114. In this example, the thickness t111 is also greater than the thickness t7. In the configuration of this example, the thickness t111 is, for example, not less than 5 μm and not more than 40 μm.

[0070] This example also makes it possible to increase the heat flux of heat dissipation from the semiconductor element 1, allowing the semiconductor element 1 to operate more appropriately. Furthermore, this example makes it possible to conduct heat from the semiconductor layer 10 more directly to the first metal layer 111. This is expected to have the effect of further increasing the heat flux of heat dissipation. Furthermore, by making the thickness t111 thicker, the heat capacity of the first metal layer 111 is increased, making it possible to more reliably suppress transient temperature increases in the semiconductor layer 10.

[0071] 13 differs from the above-described junction structure B3 mainly in the configuration of the second electrode 12. The second electrode 12 of this example includes a third metal layer 121 and a second barrier metal layer 124, and the third metal layer 121 is formed on the second barrier metal layer 124. In this example, the thickness t121 is also greater than the thickness t8. In the configuration of this example, the thickness t121 is, for example, not less than 5 μm and not more than 40 μm.

[0072] This example also makes it possible to increase the heat flux of heat dissipation from the semiconductor element 1, allowing the semiconductor element 1 to operate more appropriately. Furthermore, this example makes it possible to conduct heat from the semiconductor layer 10 more directly to the third metal layer 121. This is expected to have the effect of further increasing the heat flux of heat dissipation. Furthermore, by making the thickness t121 thicker, the heat capacity of the third metal layer 121 is increased, making it possible to more reliably suppress transient temperature increases in the semiconductor layer 10.

[0073] The bonded structure B5 shown in FIG. 14 differs from the bonded structures B1 to B4 described above mainly in that it does not include the first bonding layer 7 and the second bonding layer 8. In this example, the first metal layer 111 of the first electrode 11 is directly bonded to the first plating layer 22 of the first conductive member 2. An example of such a configuration is a configuration in which the first metal layer 111 and the first plating layer 22 are bonded by solid-state diffusion bonding when both the first metal layer 111 and the first plating layer 22 are primarily composed of the same metal, such as Ag (silver). Alternatively, when the first metal layer 111 is an Ag (silver) sintered layer, a sintering paste for forming the first metal layer 111 may be placed on the first intermediate metal layer 113, the first conductive member 2 may be placed on the sintering paste, and the sintering paste may then be sintered to form the first metal layer 111 and bond the first electrode 11 to the first conductive member 2.

[0074] In this example, the third metal layer 121 of the second electrode 12 is directly bonded to the second plating layer 32 of the second conductive member 3. An example of such a configuration is a configuration in which the third metal layer 121 and the second plating layer 32 are bonded by solid-state diffusion bonding when both are primarily composed of the same metal, such as Ag (silver). Alternatively, when the third metal layer 121 is an Ag (silver) sintered layer, a sintering paste for forming the third metal layer 121 may be placed on the second conductive member 3, and the second intermediate metal layer 123 may be placed on the sintering paste. The sintering paste may then be sintered to form the third metal layer 121 and bond the second electrode 12 and the second conductive member 3.

[0075] This example also makes it possible to increase the heat flux of heat dissipation from the semiconductor element 1, allowing the semiconductor element 1 to operate more appropriately. Furthermore, this example makes it possible to conduct heat directly from the first metal layer 111 to the first conductive member 2 without passing through the first bonding layer 7. This further suppresses transient temperature increases in the semiconductor layer 10 and promotes steady heat dissipation over a longer period of time. Furthermore, this example makes it possible to conduct heat directly from the third metal layer 121 to the second conductive member 3 without passing through the second bonding layer 8. This further suppresses transient temperature increases in the semiconductor layer 10 and promotes steady heat dissipation over a longer period of time.

[0076] 15 shows a first modified example of the semiconductor device A11. The semiconductor device A11 of this modified example differs from the semiconductor device A1 described above mainly in the configurations of the first conductive member 2 and the sealing resin 9.

[0077] In the present modified example, the first conductive member 2 has a first main surface 201 exposed from the first resin surface 91 of the sealing resin 9. The above-described recess 221 is not formed in the first conductive member 2. Furthermore, the first main surface 201 and the first resin surface 91 are flush with each other.

[0078] This example also makes it possible to increase the heat flux of heat dissipation from the semiconductor element 1, thereby enabling more appropriate operation of the semiconductor element 1. Furthermore, this example makes it possible to more effectively dissipate heat from the first main surface 201 of the first conductive member 2 to the outside of the semiconductor device A11.

[0079] 16 to 23 show a semiconductor device according to a second embodiment of the present disclosure. The semiconductor device A2 of this embodiment includes a semiconductor element 1, a first conductive member 2, a second conductive member 3, a third conductive member 4, a fourth conductive member 5, a fifth conductive member 6, and a sealing resin 9.

[0080] The first conductive member 2 has a first island portion 211 and a connection portion 213. The first island portion 211 includes a portion of each of the first main surface 201 and the second main surface 202, and is conductively joined to the first electrode 11 of the semiconductor element 1. The connection portion 213 is a portion located on the y2 side in the second direction y with respect to the first island portion 211. The connection portion 213 has a portion extending from the first island portion 211 to the y2 side in the second direction y, and a portion further extending to the z2 side in the thickness direction z.

[0081] A first main surface 201 of the first conductive member 2 is exposed from a first resin surface 91 of the sealing resin 9. In the illustrated example, the first main surface 201 and the first resin surface 91 are flush with each other.

[0082] The fourth conductive member 5 is disposed on the z2 side in the thickness direction z with respect to the first conductive member 2. The fourth conductive member 5 includes a conductive material such as metal, for example, Cu (copper). A plating layer (not shown) may be provided in an appropriate location on the fourth conductive member 5. The fourth conductive member 5 is conductively joined to the connection portion 213 of the semiconductor element 1 by a conductive bonding material 59 such as solder.

[0083] As shown in FIGS. 16 , 17 , and 19 to 22 , the fourth conductive member 5 has a seventh main surface 501 and an eighth main surface 502. The seventh main surface 501 faces the z1 side in the thickness direction z. The eighth main surface 502 faces the z2 side in the thickness direction z. The connection portion 213 of the first conductive member 2 is conductively joined to the seventh main surface 501 with a conductive bonding material 59. The seventh main surface 501 is covered with the sealing resin 9. The eighth main surface 502 is exposed from the second resin surface 92 of the sealing resin 9. In this example, the eighth main surface 502 and the second resin surface 92 are flush with each other.

[0084] The fourth conductive member 5 has a pad portion 511 , a plurality of fourth terminal portions 512 and a thin extending portion 521 .

[0085] The pad portion 511 is a portion that is conductively joined to the first conductive member 2. The pad portion 511 includes a portion of the seventh main surface 501 and a portion of the eighth main surface 502. The shape and size of the pad portion 511 are not limited in any way, and in the illustrated example, it has an elongated rectangular shape with the first direction x as the longitudinal direction when viewed in the thickness direction z.

[0086] The multiple fourth terminals 512 are connected to the pad 511 on the y2 side in the second direction y. The multiple fourth terminals 512 each extend in the second direction y when viewed in the thickness direction z and are arranged at intervals in the first direction x. The number of the multiple fourth terminals 512 is not limited and may be three, as in the illustrated example, or two, or four or more. Alternatively, a configuration including only one fourth terminal 512 may be provided. As shown in FIG. 22 , the fourth terminal 512 is exposed from the second resin surface 92 and the sixth resin surface 96 of the sealing resin 9. The tip surface of the fourth terminal 512 is flush with the sixth resin surface 96. The multiple fourth terminals 512 are used as terminals when mounting the semiconductor device A2.

[0087] The thin extending portion 521 is a portion that includes the seventh main surface 501 but does not include the eighth main surface 502. The thickness of the thin extending portion 521 in the thickness direction z is thinner than the thickness of the pad portion 511 in the thickness direction z. The thin extending portion 521 extends from the pad portion 511. In the example shown in the figure, the thin extending portion 521 extends from the pad portion 511 to the x1 side and x2 side in the first direction x and to the y1 side in the second direction y.

[0088] As shown in FIGS. 16 to 17 and 19 to 23 , the second conductive member 3 of this embodiment includes a second island portion 311 , a plurality of second terminal portions 312 , a thin extending portion 321 and a thick extending portion 323 .

[0089] The second island portion 311 is a portion on which the entire or part of the semiconductor element 1 is mounted, and has a similar configuration to the second island portion 311 of the semiconductor device A1.

[0090] The plurality of second terminals 312 are portions connected to the y1 side of the second island portion 311 in the second direction y. The second terminals 312 include a portion of the third main surface 301 and a portion of the fourth main surface 302. The second terminals 312 may be used as terminals when mounting the semiconductor device A1.

[0091] The second terminals 312 are connected to the second island portion 311 on the y1 side in the second direction y. The second terminals 312 each extend in the second direction y as viewed in the thickness direction z and are arranged at intervals in the first direction x. The number of the second terminals 312 is not limited and may be four, as in the illustrated example, or may be two, three, five, or more. Alternatively, the semiconductor device may include only one second terminal 312. As shown in FIG. 22 , the second terminal 312 is exposed from the second resin surface 92 and the fifth resin surface 95 of the sealing resin 9. The tip surface of the second terminal 312 is flush with the fifth resin surface 95. The second terminals 312 are used as terminals when mounting the semiconductor device A2.

[0092] The thick extending portion 323 protrudes from the second island portion 311 in the first direction x. The thick extending portion 323 includes a portion of the third main surface 301 and a portion of the fourth main surface 302. In the illustrated example, the second conductive member 3 has two thick extending portions 323. The two thick extending portions 323 protrude from the second island portion 311 on both sides in the first direction x. The two thick extending portions 323 are exposed from the second resin surface 92, the third resin surface 93, and the fourth resin surface 94 of the sealing resin 9. The tip surfaces of the two thick extending portions 323 are flush with the third resin surface 93 and the fourth resin surface 94.

[0093] The third conductive member 4 is disposed on the y2 side in the second direction y relative to the second conductive member 3, and on the x1 side in the first direction x relative to the fourth conductive member 5. The third conductive member 4 includes a conductive material such as a metal, for example, Cu (copper). A plating layer (not shown) may be provided in an appropriate position on the third conductive member 4. A fifth conductive member 6 is connected to the third conductive member 4.

[0094] As shown in FIGS. 16 , 17 , and 19 to 21 , the third conductive member 4 has a fifth main surface 401 and a sixth main surface 402. The fifth main surface 401 faces the z1 side in the thickness direction z. The sixth main surface 402 faces the z2 side in the thickness direction z. The fifth conductive member 6 is connected to the fifth main surface 401. The fifth main surface 401 is covered with the sealing resin 9. The sixth main surface 402 is exposed from the second resin surface 92 of the sealing resin 9. In this example, the sixth main surface 402 and the second resin surface 92 are flush with each other.

[0095] The third conductive member 4 has a pad portion 411 , a third terminal portion 412 and a thin extending portion 421 .

[0096] The pad portion 411 is a portion to which the fifth conductive member 6 is connected. The pad portion 411 includes a part of the fifth main surface 401 and a part of the sixth main surface 402. The shape and size of the pad portion 411 are not limited in any way, and in the illustrated example, it is rectangular when viewed in the thickness direction z. Furthermore, the size of the pad portion 411 in the first direction x is smaller than the size of the pad portion 511 in the first direction x.

[0097] The third terminal portion 412 is connected to the pad portion 411 on the y2 side in the second direction y. The third terminal portion 412 extends in the second direction y when viewed in the thickness direction z. The number of third terminal portions 412 is not limited in any way and may be one as in the illustrated example, or two or more. The third terminal portion 412 is exposed from the second resin surface 92 and the sixth resin surface 96 of the sealing resin 9. The tip surface of the third terminal portion 412 is flush with the sixth resin surface 96. The multiple third terminal portions 412 are used as terminals when mounting the semiconductor device A2.

[0098] The thin extending portion 421 is a portion that includes the fifth main surface 401 but does not include the sixth main surface 402. The thickness of the thin extending portion 421 in the thickness direction z is thinner than the thickness of the pad portion 411 in the thickness direction z. The thin extending portion 421 extends from the pad portion 411. In the illustrated example, the thin extending portion 421 extends from the pad portion 411 to the x1 side and x2 side in the first direction x and to the y1 side in the second direction y.

[0099] The fifth conductive member 6 is connected to the third electrode 13 of the semiconductor element 1 and the pad portion 411 of the third conductive member 4. The fifth conductive member 6 is a wire whose main component is a metal such as Au (gold), Cu (copper), or Al (aluminum). Alternatively, the fifth conductive member 6 may be formed of a wide ribbon-shaped metal member or lead member instead of a wire.

[0100] This embodiment also makes it possible to increase the heat flux of heat dissipation from the semiconductor element 1, thereby enabling more appropriate operation of the semiconductor element 1. Furthermore, by employing the first conductive member 2 and the fourth conductive member 5 that are separate from each other, it is possible to more easily achieve a configuration in which the thickness of the first conductive member 2 in the thickness direction z is greater than the thickness of the fourth conductive member 5 in the thickness direction z. Increasing the thickness of the first conductive member 2 can further promote heat dissipation from the semiconductor element 1 (semiconductor layer 10).

[0101] 24 shows a first modified example of the semiconductor device A2. The semiconductor device A21 of this modified example differs from the semiconductor device A2 described above mainly in the configuration of the first conductive member 2.

[0102] In this example, the first island portion 211 of the first conductive member 2 protrudes from the first resin surface 91 of the sealing resin 9 toward the z1 side in the thickness direction z. The first main surface 201 is located on the z1 side of the first resin surface 91 in the thickness direction z.

[0103] This example also makes it possible to increase the heat flux of heat dissipation from the semiconductor element 1, allowing the semiconductor element 1 to operate more appropriately. Furthermore, when attaching the semiconductor device A21 to a heat sink (not shown) or the like, the first main surface 201 is positioned on the z1 side of the first resin surface 91 in the thickness direction z, which has the advantage of making it easier to press the first main surface 201 against the heat sink. This further promotes heat dissipation from the semiconductor device A21.

[0104] 25 shows a second modification of the semiconductor device A2. The semiconductor device A22 of this modification is different from the above-described example mainly in the configuration of the first conductive member 2.

[0105] In this example, the first conductive member 2 has a plurality of protruding portions 223. The plurality of protruding portions 223 protrude from the first main surface 201 toward the z1 side in the thickness direction z. The shape and arrangement of the plurality of protruding portions 223 as viewed in the thickness direction z are not limited in any way. For example, the plurality of protruding portions 223 may be arranged in a matrix pattern as viewed in the thickness direction z. Alternatively, the protruding portions 223 may have a fin shape extending along the first direction x or the second direction y. In this example, the positional relationship between the first main surface 201 and the first resin surface 91 is not limited in any way. For example, the first main surface 201 is located on the z1 side of the first resin surface 91 in the thickness direction z.

[0106] This example also makes it possible to increase the heat flux of heat dissipation from the semiconductor element 1, thereby enabling more appropriate operation of the semiconductor element 1. Furthermore, by providing the first conductive member 2 with a plurality of protrusions 223, it is possible to increase the area over which heat is dissipated from the first conductive member 2. This further promotes heat dissipation from the semiconductor device A22.

[0107] The semiconductor device according to the present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the semiconductor device according to the present disclosure can be freely modified in various ways.

[0108] The present disclosure includes the embodiments described in the appendix below.

[0109] Supplementary Note 1. A semiconductor device comprising: a semiconductor element having a semiconductor layer and a first electrode arranged on a first side in a thickness direction of the semiconductor layer; a first conductive member bonded to the first electrode; a second conductive member bonded to the semiconductor element from a second side in the thickness direction; and a sealing resin having a first resin surface facing the first side in the thickness direction and a second resin surface facing the second side, the sealing resin covering the semiconductor element and at least a portion of each of the first conductive member and the second conductive member, wherein the first electrode includes a first metal layer containing a metal having a higher thermal conductivity than solder. Supplementary Note 2. The semiconductor device according to Supplementary Note 1, wherein the first metal layer contains Ag or Cu. Supplementary Note 3. The semiconductor device according to Supplementary Note 1 or 2, wherein the second conductive member is exposed from the second resin surface. Supplementary Note 4. The semiconductor device according to any of Supplements 1 to 3, wherein the first conductive member is exposed from the first resin surface. Supplementary Note 5. The semiconductor device according to Appendix 4, wherein the first conductive member has a convex portion protruding toward the first side in the thickness direction. Appendix 6. The semiconductor device according to any of Appendixes 1 to 5, wherein the first electrode includes a second metal layer interposed between the semiconductor layer and the first metal layer. Appendix 7. The semiconductor device according to Appendix 6, wherein the second metal layer includes Al. Appendix 8. The semiconductor device according to Appendix 6 or 7, wherein the thickness of the first metal layer is greater than the thickness of the second metal layer. Appendix 9. The semiconductor device according to any of Appendixes 1 to 8, further comprising a first bonding layer bonding the first electrode and the first conductive member. Appendix 10. The semiconductor device according to Appendix 9, wherein the thickness of the first metal layer is greater than the thickness of the first bonding layer. Appendix 11. The semiconductor device according to any of Appendixes 1 to 8, wherein the first metal layer is in direct contact with the first conductive member. Appendix 12. The semiconductor device according to any one of claims 1 to 11, wherein the semiconductor element has a second electrode disposed on the second side in the thickness direction of the semiconductor layer, and the second electrode includes a third metal layer containing a metal having a higher thermal conductivity than solder. Appendix 13. The semiconductor device according to claim 12, wherein the third metal layer contains Ag or Cu.Appendix 14. The semiconductor device according to Appendix 12 or 13, further comprising a second bonding layer bonding the second electrode and the second conductive member, wherein the thickness of the third metal layer is greater than the thickness of the second bonding layer. Appendix 15. The semiconductor device according to any of Appendixes 1 to 14, further comprising a third conductive member conducting to the third electrode, wherein the semiconductor element has the third electrode arranged on the first side in the thickness direction of the semiconductor layer. Appendix 16. The semiconductor device according to any of Appendixes 1 to 15, wherein the first conductive member has a first terminal portion including a portion located on the second side in the thickness direction with respect to the semiconductor element. Appendix 17. The semiconductor device according to Appendix 15, further comprising a fourth conductive member conducting to the first conductive member, wherein the fourth conductive member has a portion located on the second side in the thickness direction with respect to the semiconductor element.

[0110] A1, A11, A2, A21, A22: semiconductor device B1, B2, B3, B4, B5: bonded structure 1: semiconductor element 2: first conductive member 3: second conductive member 4: third conductive member 5: fourth conductive member 6: fifth conductive member 7: first bonding layer 8: second bonding layer 9: sealing resin 10: semiconductor layer 11: first electrode 12: second electrode 13: third electrode 21: first base material 22: first plating layer 31: second base material 32: second plating layer 59: conductive bonding material 91: first resin surface 92: second resin surface 93: third resin surface 94: fourth resin surface 95: fifth resin surface 96: sixth resin surface 111: first metal layer 112: second metal layer 113: first intermediate metal layer 114: First barrier metal layer 121: Third metal layer 122: Fourth metal layer 123: Second intermediate metal layer 124: Second barrier metal layer 201: First main surface 202: Second main surface 211: First island portion 212: First terminal portion 213: Connection portion 221: Recess 223: Protrusion 301: Third main surface 302: Fourth main surface 311: Second island portion 312: Second terminal portion 321: Thin extension portion 322: Through hole 323: Thick extension portion 401: Fifth main surface 402: Sixth main surface 411: Pad portion 412: Third terminal portion 421: Thin extension portion 501: Seventh main surface 502: Eighth main surface 511: Pad portion 512: Fourth terminal portion 521: Thin-walled extension portion t111, t112, t121, t122, t7, t8: Thickness x: First direction y: Second direction z: Thickness direction

Claims

1. a semiconductor element having a semiconductor layer and a first electrode disposed on a first side in a thickness direction of the semiconductor layer; a first conductive member joined to the first electrode; a second conductive member joined to the semiconductor element from a second side in the thickness direction; a sealing resin having a first resin surface facing the first side in the thickness direction and a second resin surface facing the second side, the sealing resin covering the semiconductor element and at least a part of each of the first conductive member and the second conductive member; The first electrode includes a first metal layer including a metal having a higher thermal conductivity than solder.

2. The semiconductor device according to claim 1 , wherein the first metal layer contains Ag or Cu.

3. The semiconductor device according to claim 1 , wherein the second conductive member is exposed from the second resin surface.

4. The semiconductor device according to claim 1 , wherein the first conductive member is exposed from the first resin surface.

5. The semiconductor device according to claim 4 , wherein the first conductive member has a protrusion protruding toward the first side in the thickness direction.

6. 6. The semiconductor device according to claim 1, wherein the first electrode includes a second metal layer interposed between the semiconductor layer and the first metal layer.

7. The semiconductor device according to claim 6 , wherein the second metal layer contains Al.

8. The semiconductor device according to claim 6 , wherein the first metal layer is thicker than the second metal layer.

9. The semiconductor device according to claim 1 , further comprising a first bonding layer bonding said first electrode and said first conductive member.

10. The semiconductor device according to claim 9 , wherein the first metal layer is thicker than the first bonding layer.

11. The semiconductor device according to claim 1 , wherein the first metal layer is in direct contact with the first conductive member.

12. the semiconductor element has a second electrode disposed on the second side in the thickness direction of the semiconductor layer, The semiconductor device according to claim 1 , wherein the second electrode includes a third metal layer including a metal having a higher thermal conductivity than solder.

13. The semiconductor device according to claim 12 , wherein the third metal layer contains Ag or Cu.

14. a second bonding layer that bonds the second electrode and the second conductive member; The semiconductor device according to claim 12 , wherein the third metal layer has a thickness greater than a thickness of the second bonding layer.

15. Further comprising a third conductive member that is electrically connected to the third electrode, The semiconductor device according to claim 1 , wherein the semiconductor element has a third electrode disposed on the first side in the thickness direction of the semiconductor layer.

16. The semiconductor device according to claim 1 , wherein the first conductive member has a first terminal portion including a portion located on the second side in the thickness direction with respect to the semiconductor element.

17. a fourth conductive member electrically connected to the first conductive member; The semiconductor device according to claim 15 , wherein the fourth conductive member has a portion located on the second side in the thickness direction with respect to the semiconductor element.