Semiconductor device

Abstract

The present invention provides a semiconductor device which is provided with a semiconductor element that has a first electrode and a gate electrode. This semiconductor device is additionally provided with: a first terminal that is electrically connected to the first electrode; a second terminal that is electrically connected to the gate electrode; and a third terminal that is electrically connected to the first electrode. The direction of the electric current flowing through the first terminal and the third terminal is opposite to the direction of the electric current flowing through the second terminal. The second terminal is positioned adjacent to the first terminal. The third terminal is positioned opposite to the first terminal with respect to the second terminal.

Description

Semiconductor Devices

[0001] The present disclosure relates to semiconductor devices.

[0002] Patent Document 1 discloses an example of a semiconductor device equipped with a MOSFET. The semiconductor device includes a drain terminal to which a power supply voltage is applied, a gate terminal for inputting an electrical signal to the MOSFET, and a source terminal from which power corresponding to the power supply voltage is converted based on the electrical signal and then output. The MOSFET has a drain electrode conducting to the drain terminal and a source electrode conducting to the source terminal. The drain electrode is bonded to a die pad connected to the drain terminal by a first conductive bonding material. The source electrode is bonded to a metal clip by a second conductive bonding material. The metal clip is also bonded to the source terminal. Both the first conductive bonding material and the second conductive bonding material are solder. This allows a larger current to flow through the semiconductor device.

[0003] In the semiconductor device disclosed in Patent Document 1, switching loss occurs in the MOSFET depending on the speed of the current flowing through the gate terminal. The larger the switching loss, the longer the time from when power is input to the MOSFET until it is output to the source terminal, and the greater the power consumption of the MOSFET. This leads to a decrease in the conversion efficiency of power conversion using the semiconductor device. Therefore, it is desirable to reduce the switching loss of the MOSFET.

[0004] JP 2016-192450 A

[0005] An object of the present disclosure is to provide a semiconductor device that is improved over conventional semiconductor devices. In particular, in view of the above circumstances, an object of the present disclosure is to provide a semiconductor device that can reduce switching loss of semiconductor elements.

[0006] A semiconductor device provided by a first aspect of the present disclosure includes a semiconductor element having a first electrode and a gate electrode, a first terminal electrically connected to the first electrode, a second terminal electrically connected to the gate electrode, and a third terminal electrically connected to the first electrode. The direction of current flowing through each of the first terminal and the third terminal is opposite to the direction of current flowing through the second terminal. The second terminal is located adjacent to the first terminal. The third terminal is located on the opposite side of the first terminal with respect to the second terminal.

[0007] According to the above configuration, it is possible to reduce the switching loss of the semiconductor element in the semiconductor device.

[0008] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0009] FIG. 1 is a perspective view of a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a plan view of the semiconductor device shown in FIG. 1. FIG. 3 is a plan view corresponding to FIG. 2, seen through the sealing resin. FIG. 4 is a bottom view of the semiconductor device shown in FIG. 1. FIG. 5 is a front view of the semiconductor device shown in FIG. 1. FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. 3. FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 3. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 3. FIG. 9 is a partially enlarged view of FIG. 6. FIG. 10 is a plan view illustrating the effects of the semiconductor device shown in FIG. 1, and corresponds to FIG. 3. FIG. 11 is a plan view of a semiconductor device according to a second embodiment of the present disclosure, seen through the sealing resin. FIG. 12 is a bottom view of the semiconductor device shown in FIG. 11. FIG. 13 is a front view of the semiconductor device shown in FIG. 11. FIG. 14 is a rear view of the semiconductor device shown in FIG. 11. FIG. 15 is a right side view of the semiconductor device shown in FIG. 11. Fig. 16 is a cross-sectional view taken along line XVI-XVI in Fig. 11. Fig. 17 is a cross-sectional view taken along line XVII-XVII in Fig. 11. Fig. 18 is a cross-sectional view taken along line XVIII-XVIII in Fig. 11. Fig. 19 is a partially enlarged view of Fig. 16. Fig. 20 is a plan view illustrating the effects of the semiconductor device shown in Fig. 11, and corresponds to Fig. 11.

[0010] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present disclosure will be described with reference to the accompanying drawings.

[0011] First Embodiment: A semiconductor device A10 according to a first embodiment of the present disclosure will be described with reference to FIGS. 1 to 10 . The semiconductor device A10 is generally used in power conversion circuits such as inverters. The semiconductor device A10 is packaged in a TO (Transistor Outline) format. The semiconductor device A10 includes a semiconductor element 10, a die pad 20, a first terminal 21, a second terminal 22, a third terminal 23, a fourth terminal 24, a conductive bonding layer 29, a first conductive member 31, a second conductive member 32, a third conductive member 33, and a sealing resin 40. For ease of understanding, FIG. 3 shows the sealing resin 40 in a see-through manner. In FIG. 3 , the see-through sealing resin 40 is indicated by an imaginary line (double-dashed line).

[0012] In the description of the semiconductor device A10, for convenience, the normal direction to the mounting surface 201 of the die pad 20 (described later) will be referred to as the "first direction z." One direction perpendicular to the first direction z will be referred to as the "second direction x." A direction perpendicular to both the first direction z and the second direction x will be referred to as the "third direction y."

[0013] The semiconductor element 10 is, for example, a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). Alternatively, the semiconductor element 10 may be a field effect transistor including a MISFET (Metal-Insulator-Semiconductor Field-Effect Transistor) or a bipolar transistor such as an IGBT (Insulated Gate Bipolar Transistor). In the description of the semiconductor device A10, the semiconductor element 10 is an n-channel MOSFET with a vertical structure. The multiple semiconductor elements 10 include a compound semiconductor substrate. The compound semiconductor substrate has a composition including silicon carbide (SiC).

[0014] As shown in FIGS. 3 and 9, the semiconductor element 10 has a first electrode 11, a gate electrode 12, and a second electrode 13.

[0015] 3 and 9 , the first electrode 11 is located on one side of the semiconductor element 10 in the first direction z. A current corresponding to the power converted by the semiconductor element 10 flows through the first electrode 11. In other words, the first electrode 11 corresponds to the source electrode of the semiconductor element 10.

[0016] 3 , the first electrode 11 includes a first portion 111 and two second portions 112. The two second portions 112 are located on one side of the first portion 111 in the second direction x. The two second portions 112 are spaced apart from each other in the third direction y. When viewed in the first direction z, the area of ​​each of the two second portions 112 is smaller than the area of ​​the first portion 111.

[0017] 9 , the second electrode 13 is located on the opposite side of the first electrode 11 in the first direction z. A current corresponding to the power before being converted by the semiconductor element 10 flows through the second electrode 13. In other words, the second electrode 13 corresponds to the drain electrode of the semiconductor element 10.

[0018] 3 , the gate electrode 12 is located on the same side as the first electrode 11 in the first direction z. The gate electrode 12 is located between the two second portions 112 of the first electrode 11 in the third direction y. A gate voltage for driving the semiconductor element 10 is applied to the gate electrode 12. When viewed in the first direction z, the area of ​​the gate electrode 12 is smaller than the area of ​​the first portion 111 of the first electrode 11.

[0019] As shown in FIG. 3 and FIGS. 6 to 8 , the die pad 20 is a conductive member on which the semiconductor element 10 is mounted. The die pad 20, together with the first terminal 21, the second terminal 22, the third terminal 23, and the fourth terminal 24, are formed from the same lead frame. The lead frame is made of copper (Cu) or a copper alloy. Therefore, the die pad 20, the first terminal 21, the second terminal 22, the third terminal 23, and the fourth terminal 24 each contain copper. As shown in FIG. 6 , the die pad 20 has a mounting surface 201, a back surface 202, and a through hole 203. The mounting surface 201 faces the first direction z. The mounting surface 201 faces the second electrode 13 of the semiconductor element 10. The back surface 202 faces the opposite side of the mounting surface 201 in the first direction z. The back surface 202 is plated with, for example, tin (Sn). The through hole 203 penetrates the die pad 20 in the first direction z from the mounting surface 201 to the back surface 202. The through hole 203 has a circular shape when viewed in the first direction z.

[0020] 6 and 7, the conductive bonding layer 29 bonds the die pad 20 and the semiconductor element 10. In the semiconductor device A10, the conductive bonding layer 29 conductively bonds the mounting surface 201 of the die pad 20 and the second electrode 13 of the semiconductor element 10. This allows the second electrode 13 to be electrically connected to the die pad 20. The conductive bonding layer 29 is, for example, solder. Alternatively, the conductive bonding layer 29 may be a sintered metal.

[0021] 3 and 6 , the first terminal 21 is located away from the die pad 20. The first terminal 21 extends in the third direction y. The first terminal 21 is electrically connected to the first portion 111 of the first electrode 11 of the semiconductor element 10. Therefore, the first terminal 21 corresponds to the source terminal of the semiconductor device A10.

[0022] 3 and 6 , the first terminal 21 has a covering portion 211, an exposed portion 212, and a first bonding surface 213. The covering portion 211 is covered with the sealing resin 40. The exposed portion 212 is connected to the covering portion 211 and is exposed from the sealing resin 40. The exposed portion 212 extends away from the die pad 20 in the third direction y. The surface of the exposed portion 212 is plated with, for example, tin. The first bonding surface 213 faces the same side as the mounting surface 201 of the die pad 20 in the first direction z. The first bonding surface 213 is included as part of the covering portion 211. The first bonding surface 213 is located on the side of the mounting surface 201 where the semiconductor element 10 is located in the first direction z.

[0023] 3 and 7 , the second terminal 22 is located away from the die pad 20. The second terminal 22 extends in the third direction y. The second terminal 22 is located next to the first terminal 21. The second terminal 22 is electrically connected to the gate electrode 12 of the semiconductor element 10. Therefore, the second terminal 22 corresponds to the gate terminal of the semiconductor device A10. The direction of the current flowing through the second terminal 22 is opposite to the direction of the current flowing through the first terminal 21.

[0024] 3 and 7 , the second terminal 22 has a covering portion 221, an exposed portion 222, and a second bonding surface 223. The covering portion 221 is covered with the sealing resin 40. The exposed portion 222 is connected to the covering portion 221 and is exposed from the sealing resin 40. The exposed portion 222 extends away from the die pad 20 in the third direction y. The surface of the exposed portion 222 is tin-plated. The second bonding surface 223 faces the same side as the mounting surface 201 of the die pad 20 in the first direction z. The second bonding surface 223 is included as part of the covering portion 221. In the first direction z, the position of the second bonding surface 223 is the same as the position of the first bonding surface 213 of the first terminal 21.

[0025] As shown in FIG. 3 , the third terminal 23 is located away from the die pad 20. The second terminal 22 and the third terminal 23 extend in the third direction y. The third terminal 23 is located on the opposite side of the first terminal 21 with respect to the second terminal 22. The third terminal 23 is located next to the second terminal 22. The third terminal 23 is electrically connected to one of the two second portions 112 of the first electrode 11 of the semiconductor element 10. Therefore, a voltage equipotential to the voltage applied to the first terminal 21 is applied to the third terminal 23. The direction of the current flowing through the third terminal 23 is the same as the direction of the current flowing through the first terminal 21.

[0026] 3 , the third terminal 23 has a covered portion 231, an exposed portion 232, and a third bonding surface 233. The covered portion 231 is covered with the sealing resin 40. The exposed portion 232 is connected to the covered portion 231 and is exposed from the sealing resin 40. The exposed portion 232 extends away from the die pad 20 in the third direction y. The surface of the exposed portion 232 is tin-plated. The third bonding surface 233 faces the same side as the mounting surface 201 of the die pad 20 in the first direction z. The third bonding surface 233 is included as part of the covered portion 231. In the first direction z, the position of the third bonding surface 233 is the same as the position of the first bonding surface 213 of the first terminal 21.

[0027] 3 and 8 , the fourth terminal 24 is located on the opposite side of the second terminal 22 from the first terminal 21 in the second direction x. The fourth terminal 24 includes a portion extending in the third direction y and is connected to the die pad 20. This establishes electrical continuity between the fourth terminal 24 and the second electrode 13 of the semiconductor element 10. Therefore, the fourth terminal 24 corresponds to the drain terminal of the semiconductor device A10. The direction of current flowing through the fourth terminal 24 is opposite to the direction of current flowing through the first terminal 21.

[0028] 3 and 8 , the fourth terminal 24 has a covered portion 241 and an exposed portion 242. The covered portion 241 is connected to the die pad 20 and is covered with the sealing resin 40. When viewed in the second direction x, the covered portion 241 is bent. The exposed portion 242 is connected to the covered portion 241 and is exposed from the sealing resin 40. The exposed portion 242 extends away from the die pad 20 in the third direction y. The surface of the exposed portion 242 is tin-plated.

[0029] As shown in Fig. 3 , the first terminal 21, the second terminal 22, the third terminal 23, and the fourth terminal 24 are arranged along the second direction x. As shown in Fig. 3 and Fig. 5 , the minimum distance d1 between the portions of the first terminal 21 and the fourth terminal 24 exposed from the sealing resin 40 (exposed portions 212 and 242) is greater than the minimum distance d2 between the portions of the first terminal 21 and the second terminal 22 exposed from the sealing resin 40 (exposed portions 212 and 222). As shown in Fig. 5 , the heights h of the portions of the first terminal 21, the second terminal 22, the third terminal 23, and the fourth terminal 24 exposed from the sealing resin 40 are all equal.

[0030] 3 and 6 , the first conductive member 31 is conductively bonded to the first portion 111 of the first electrode 11 of the semiconductor element 10 and the first bonding surface 213 of the first terminal 21. This electrically connects the first terminal 21 to the first portion 111 of the first electrode 11. In the semiconductor device A10, the first conductive member 31 is a plurality of wires containing aluminum (Al). Alternatively, the first conductive member 31 may be a plurality of wires containing copper or a metal clip containing copper.

[0031] 3 and 7 , the second conductive member 32 is conductively bonded to the gate electrode 12 of the semiconductor element 10 and the second bonding surface 223 of the second terminal 22. This allows the second terminal 22 to be electrically connected to the gate electrode 12. The second conductive member 32 is, for example, a wire containing either aluminum or gold (Au).

[0032] 3 , the third conductive member 33 is conductively bonded to one of the two second portions 112 of the first electrode 11 of the semiconductor element 10 and the third bonding surface 233 of the third terminal 23. This allows the third terminal 23 to be electrically connected to one of the two second portions 112 of the first electrode 11. The third conductive member 33 is, for example, a wire containing either aluminum or gold.

[0033] 3, the second conductive member 32 is located adjacent to the first conductive member 31. Furthermore, the second conductive member 32 includes a section located between the first conductive member 31 and the third conductive member 33. As shown in FIG. 3, in the semiconductor device A10, the dimension of the first terminal 21 in the third direction y is greater than the conductive path length of the first conductive member 31. In addition, the dimension of the second terminal 22 in the third direction y is greater than the conductive path length of the second conductive member 32.

[0034] As shown in FIGS. 3, 6, and 7, the sealing resin 40 covers the semiconductor element 10, the first conductive member 31, and the second conductive member 32. As shown in FIGS. 6 to 8, the sealing resin 40 also covers a portion of each of the die pad 20, the first terminal 21, the second terminal 22, and the fourth terminal 24. The sealing resin 40 also covers the third conductive member 33 and a portion of the third terminal 23. The sealing resin 40 has electrical insulation properties. The sealing resin 40 is made of a material containing, for example, black epoxy resin. The sealing resin 40 has a top surface 41, a bottom surface 42, two first side surfaces 43, two second side surfaces 44, two openings 45, and a mounting hole 46.

[0035] 6 to 8, the top surface 41 faces the same side as the mounting surface 201 of the die pad 20 in the first direction z. As shown in Fig. 6 to 8, the bottom surface 42 faces the opposite side to the top surface 41 in the first direction z. The back surface 202 of the die pad 20 is exposed from the bottom surface 42.

[0036] 2 and 4 , the two first side surfaces 43 are spaced apart from each other in the third direction y. Each of the two first side surfaces 43 is connected to the top surface 41 and the bottom surface 42. The exposed portion 212 of the first terminal 21, the exposed portion 222 of the second terminal 22, and the exposed portion 232 of the fourth terminal 24 are exposed from one of the two first side surfaces 43.

[0037] As shown in FIGS. 2 and 4 , the two second side surfaces 44 are spaced apart from each other in the second direction x. Each of the two second side surfaces 44 is connected to the top surface 41 and the bottom surface 42. As shown in FIG. 2 , the two openings 45 are spaced apart from each other in the second direction x. Each of the two openings 45 is recessed inward into the sealing resin 40 from both the top surface 41 and one of the two second side surfaces 44. A portion of the mounting surface 201 of the die pad 20 is exposed from each of the two openings 45. As shown in FIGS. 2 , 4 , and 8 , the mounting hole 46 penetrates the sealing resin 40 from the top surface 41 to the bottom surface 42 in the first direction z. As viewed in the first direction z, the mounting hole 46 is contained within the through hole 203 of the die pad 20. The peripheral surface of the die pad 20 defining the through hole 203 is covered with the sealing resin 40. As a result, the maximum dimension of the mounting hole 46 is smaller than the dimension of the through hole 203 when viewed in the first direction z.

[0038] Next, the effects of the semiconductor device A10 will be described.

[0039] The semiconductor device A10 includes a semiconductor element 10 having a first electrode 11 and a gate electrode 12, a first terminal 21 electrically connected to the first electrode 11, a second terminal 22 electrically connected to the gate electrode 12, and a third terminal 23 electrically connected to the first electrode 11. The direction of current flowing through each of the first terminal 21 and the third terminal 23 is opposite to the direction of current flowing through the second terminal 22. The second terminal 22 is located adjacent to the first terminal 21. The third terminal 23 is located on the opposite side of the second terminal 22 from the first terminal 21.

[0040] In the semiconductor device A10, as shown in FIG. 10, when the first electrode 11 is driven, an output current I d The output current I dis a so-called unsteady current whose magnitude changes with time. Therefore, a magnetic flux M is formed around the first terminal 21. Therefore, by adopting this configuration, an induced electromotive force V is generated at the second terminal 22 by electromagnetic induction caused by the magnetic flux M. M The induced electromotive force V M The direction of the current flowing through the second terminal 22 is equal to the direction of the current flowing through the second terminal 22. Therefore, the current flowing through the second terminal 22 is induced by the induced electromotive force V M This shortens the time required to turn on and off the semiconductor element 10, and reduces the amount of power consumed for turning on and off. Furthermore, the induced electromotive force V acting on the second terminal 22 due to the mutual induction between the first terminal 21 and the third terminal 23 is M Therefore, according to this configuration, in the semiconductor device A10, it is possible to reduce the switching loss of the semiconductor element 10.

[0041] The semiconductor device A10 further includes a first conductive member 31, a second conductive member 32, and a third conductive member 33 covered with a sealing resin 40. The second conductive member 32 is located next to the first conductive member 31. With this configuration, the output current I d As a result, an induced electromotive force V M As a result, the current flowing through the second terminal 22 is further accelerated, and the switching loss of the semiconductor element 10 can be effectively reduced.

[0042] The second conductive member 32 includes a section located between the first conductive member 31 and the third conductive member 33. With this configuration, the third conductive member 33 is located farther from the first conductive member 31 than the second conductive member 32. This makes it possible to suppress current obstruction in the second conductive member 32 caused by mutual induction between the first conductive member 31 and the third conductive member 33.

[0043] In the semiconductor device A10, the dimension of the first terminal 21 in the third direction y is greater than the conductive path length of the first conductive member 31. Furthermore, the dimension of the second terminal 22 in the third direction y is greater than the conductive path length of the second conductive member 32. Therefore, in the semiconductor device A10, the induced electromotive force V M The effect of the first terminal 21 and the second terminal 22 is more dominant than that of the first conductive member 31 and the second conductive member 32. Therefore, in the semiconductor device A10, it is preferable to make the distance between the first terminal 21 and the second terminal 22 smaller.

[0044] The semiconductor element 10 has a second electrode 13 located on the opposite side of the first electrode 11 in the first direction z. The semiconductor device A10 further includes a fourth terminal 24 electrically connected to the second electrode 13. The fourth terminal 24 is located on the opposite side of the second terminal 22 with respect to the first terminal 21 in the second direction x. As shown in FIG. 3 , the distance d1 between the first terminal 21 and the fourth terminal 24 is larger than the distance d2 between the first terminal 21 and the second terminal 22. This configuration reduces switching loss in the semiconductor element 10 while preventing overcurrent from flowing through the fourth terminal 24 due to the influence of the magnetic flux M shown in FIG. 10 .

[0045] The semiconductor device A10 further includes a die pad 20 to which the second electrode 13 of the semiconductor element 10 is conductively bonded. The fourth terminal 24 is connected to the die pad 20. This configuration allows the die pad 20 to have both heat dissipation and electrical conductivity functions. In this case, the die pad 20 is exposed from the sealing resin 40, thereby improving the heat dissipation properties of the semiconductor device A10.

[0046] Second Embodiment: A semiconductor device A20 according to a second embodiment of the present disclosure will be described with reference to Figures 11 to 20. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are given the same reference numerals, and duplicated descriptions will be omitted. For ease of understanding, Figure 11 shows the sealing resin 40 through which light is transmitted. In Figure 11, the transmitted sealing resin 40 is shown by imaginary lines.

[0047] The semiconductor device A20 differs from the semiconductor device A10 in that it does not include a die pad 20 and in the configurations of the semiconductor element 10, the first terminal 21, the second terminal 22, the third terminal 23, and the fourth terminal 24. The package format of the semiconductor device A20 is QFN (Quad Flat Non-leaded).

[0048] 11 , the first electrode 11 of the semiconductor element 10 is a single electrode, and does not include a first portion 111 and two second portions 112 that are spaced apart from each other. The first conductive member 31 and the third conductive member 33 are each conductively bonded to the first electrode 11.

[0049] As shown in Figures 11, 12, 13 and 16, the first terminal 21 has a first bonding surface 213, two mounting surfaces 214, two side surfaces 215, two inner surfaces 216, a canopy portion 217 and a hanging portion 218.

[0050] As shown in Fig. 16 , the two mounting surfaces 214 face the opposite side from the first bonding surface 213 in the first direction z. As shown in Fig. 12 , the mounting surfaces 214 are spaced apart from each other in the second direction x. The two mounting surfaces 214 are exposed from the bottom surface 42 of the sealing resin 40. As shown in Figs. 13 and 16 , the two side surfaces 215 are individually connected to the two mounting surfaces 214 and face the third direction y. The two side surfaces 215 are also connected to the first bonding surface 213. The two side surfaces 215 are exposed from either of the two first side surfaces 43 of the sealing resin 40.

[0051] As shown in FIGS. 11 , 12 , and 16 , the two inner circumferential surfaces 216 are individually connected to the two mounting surfaces 214 and face a direction perpendicular to the first direction z. The inner circumferential surfaces 216 are covered with sealing resin 40. As shown in FIGS. 11 , 12 , 13 , and 16 , the eave portions 217 protrude from the two inner circumferential surfaces 216 in a direction perpendicular to the first direction z. The first bonding surface 213 is included as part of the eave portions 217. The eave portions 217 are covered with sealing resin 40. As shown in FIGS. 11 and 12 , the suspending portion 218 protrudes outward from the sealing resin 40 in the second direction x from the eave portions 217. The first bonding surface 213 is included as part of the suspending portion 218. As shown in FIG. 15 , the suspending portion 218 has an end surface 218A facing the second direction x. The end surface 218A is exposed from one of the two second side surfaces 44 of the sealing resin 40 .

[0052] As shown in FIGS. 11, 12, 13 and 17, the second terminal 22 has a second bonding surface 223, a mounting surface 224, a side surface 225, an inner peripheral surface 226 and a canopy portion 227.

[0053] 17 , the mounting surface 224 faces the opposite side from the second bonding surface 223 in the first direction z. As shown in FIG. 12 , the mounting surface 224 is exposed from the bottom surface 42 of the sealing resin 40. As shown in FIGS. 13 and 17 , the side surface 225 is connected to the second bonding surface 223 and the mounting surface 224 and faces the third direction y. The side surface 225 is exposed from the first side surface 43, of the two first side surfaces 43 of the sealing resin 40, on which the side surface 215 of the first terminal 21 is exposed.

[0054] 11 , 12 , and 17 , the inner circumferential surface 226 is connected to the mounting surface 224 and faces in a direction perpendicular to the first direction z. The inner circumferential surface 226 is covered with the sealing resin 40. As shown in FIGS. 11 , 12 , 13 , and 17 , the eaves portion 227 protrudes from the inner circumferential surface 226 in a direction perpendicular to the first direction z. The second bonding surface 223 is included in part of the eaves portion 227. The eaves portion 227 is covered with the sealing resin 40.

[0055] As shown in FIGS. 11, 12 and 13, the third terminal 23 has a third bonding surface 233, a mounting surface 234, a side surface 235, an inner peripheral surface 236, a canopy portion 237 and a hanging portion 238.

[0056] 11 and 12 , the mounting surface 234 faces the opposite side from the third bonding surface 233 in the first direction z. As shown in Fig. 12 , the mounting surface 234 is exposed from the bottom surface 42 of the sealing resin 40. As shown in Fig. 13 , the side surface 235 is connected to the third bonding surface 233 and the mounting surface 234 and faces the third direction y. The side surface 235 is exposed from the first side surface 43, of the two first side surfaces 43 of the sealing resin 40, on which the side surface 215 of the first terminal 21 is exposed.

[0057] As shown in FIGS. 11 and 12 , the inner circumferential surface 236 is connected to the mounting surface 234 and faces a direction perpendicular to the first direction z. The inner circumferential surface 236 is covered with sealing resin 40. As shown in FIGS. 11 , 12 , and 13 , the eaves portion 237 protrudes from the inner circumferential surface 236 in a direction perpendicular to the first direction z. The third bonding surface 233 is included in part of the eaves portion 237. The eaves portion 237 is covered with the sealing resin 40. As shown in FIGS. 11 and 12 , the suspending portion 238 protrudes from the eaves portion 237 outward from the sealing resin 40 in the second direction x. The third bonding surface 233 is included in part of the suspending portion 238. As shown in FIG. 11 , the suspending portion 218 has an end surface 218A facing the second direction x. The end surface 218A is exposed from one of the two second side surfaces 44 of the sealing resin 40 from which the end surface 218A of the hanging portion 218 of the first terminal 21 is not exposed.

[0058] 11 , the fourth terminal 24 is spaced apart from the first terminal 21, the second terminal 22, and the third terminal 23 in the third direction y. As shown in FIGS. 11 , 12 , 14 , and 16 to 18 , the fourth terminal 24 has a mounting surface 243, a mounting surface 244, a plurality of side surfaces 245, an inner peripheral surface 246, a canopy portion 247, and two hanging portions 248.

[0059] As shown in FIGS. 16 to 18 , the mounting surface 243 and the mounting surface 244 face opposite each other in the first direction z. The mounting surface 243 faces the semiconductor element 10. The second electrode 13 of the semiconductor element 10 is conductively bonded to the mounting surface 243 via the conductive bonding layer 29. This electrically connects the second electrode 13 of the semiconductor element 10 to the fourth terminal 24. The mounting surface 234 is exposed from the bottom surface 42 of the sealing resin 40. The area of ​​the mounting surface 234 is larger than the areas of the two mounting surfaces 214 of the first terminal 21, the mounting surface 224 of the second terminal 22, and the mounting surface 234 of the third terminal 23. As seen in the first direction z, the semiconductor element 10 overlaps the mounting surface 234. As shown in FIGS. 14 and 16 , a plurality of side surfaces 235 are connected to the mounting surface 243 and the mounting surface 244 and face the third direction y. The side surfaces 235 are exposed from one of the two first side surfaces 43 of the sealing resin 40 from which the two side surfaces 215 of the first terminals 21 are not exposed. The side surfaces 235 are arranged along the second direction x.

[0060] As shown in FIGS. 11 , 12 , and 16 to 18 , the inner circumferential surface 246 is connected to the mounting surface 244 and faces in a direction perpendicular to the first direction z. The inner circumferential surface 246 is covered with the sealing resin 40. As viewed in the first direction z, the semiconductor element 10 is surrounded by the inner circumferential surface 236 and the multiple side surfaces 235. As shown in FIGS. 11 , 12 , 14 , and 16 to 18 , the eave portion 237 protrudes from the inner circumferential surface 236 in a direction perpendicular to the first direction z. The mounting surface 243 is included as part of the eave portion 237. The eave portion 237 is covered with the sealing resin 40. As shown in FIGS. 11 , 12 , and 18 , two suspending portions 248 protrude outward from the eave portion 237 in the second direction x from the eave portion 237. The two suspending portions 248 are located on opposite sides of each other in the second direction x relative to the eave portion 237. The mounting surface 243 is included in a part of each of the two hanging portions 218. Each of the two hanging portions 248 has an end surface 248A facing the second direction x. The end surface 248A of each of the two hanging portions 248 is exposed individually from the two second side surfaces 44 of the sealing resin 40.

[0061] 11 and 16 , in the semiconductor device A20, the first conductive member 31 is a metal clip. One end of the first conductive member 31 is conductively bonded to the first electrode 11 of the semiconductor element 10 via the conductive bonding layer 29. The other end of the first conductive member 31 is conductively bonded to the first bonding surface 213 of the first terminal 21 via the conductive bonding layer 29.

[0062] 11 , in the semiconductor device A20, the second conductive member 32 is also located next to the first conductive member 31. Furthermore, the second conductive member 32 includes a section located between the first conductive member 31 and the third conductive member 33. As shown in FIG. 11 , in the semiconductor device A20, the dimension of the first terminal 21 in the third direction y is smaller than the conductive path length of the first conductive member 31. In addition, the dimension of the second terminal 22 in the third direction y is smaller than the conductive path length of the second conductive member 32.

[0063] Next, the effects of the semiconductor device A20 will be described.

[0064] The semiconductor device A20 includes a semiconductor element 10 having a first electrode 11 and a gate electrode 12, a first terminal 21 electrically connected to the first electrode 11, a second terminal 22 electrically connected to the gate electrode 12, and a third terminal 23 electrically connected to the first electrode 11. The direction of current flowing through each of the first terminal 21 and the third terminal 23 is opposite to the direction of current flowing through the second terminal 22. The second terminal 22 is located next to the first terminal 21. The third terminal 23 is located on the opposite side of the first terminal 21 with respect to the second terminal 22. With this configuration, as shown in FIG. 20 , an induced electromotive force V is generated in the second terminal 22 due to electromagnetic induction caused by a magnetic flux M. M The induced electromotive force V M The direction of the current flowing through the second terminal 22 is equal to the direction of the current flowing through the second terminal 22. Therefore, the current flowing through the second terminal 22 is induced by the induced electromotive force V M Therefore, with this configuration, the semiconductor device A20 can also reduce the switching loss of the semiconductor element 10. Furthermore, by having a configuration common to the semiconductor element 10, the semiconductor device A20 achieves the same effects as the semiconductor element 10.

[0065] In the semiconductor device A20, the dimension of the first terminal 21 in the third direction y is smaller than the conductive path length of the first conductive member 31. Furthermore, the dimension of the second terminal 22 in the third direction y is smaller than the conductive path length of the second conductive member 32. Therefore, in the semiconductor device A20, the induced electromotive force V M The effect of the first conductive member 31 and the second conductive member 32 is more dominant than that of the first terminal 21 and the second terminal 22. Therefore, in the semiconductor device A20, it is preferable to make the distance between the first conductive member 31 and the second conductive member 32 smaller.

[0066] In the semiconductor device A20, the second electrode 13 of the semiconductor element 10 is conductively bonded to the fourth terminal 24. The sealing resin 40 has a bottom surface 42 facing the first direction z. The first terminal 21, the second terminal 22, the third terminal 23, and the fourth terminal 24 are exposed from the bottom surface 42. This configuration enables the semiconductor device A20 to be surface-mounted on a wiring board. In this case, by increasing the area of ​​the fourth terminal 24 exposed from the bottom surface 42, the heat dissipation of the semiconductor device A20 can be improved.

[0067] The sealing resin 40 has two first side surfaces 43 facing opposite each other in the third direction y. The first terminal 21, the second terminal 22, the third terminal 23, and the fourth terminal 24 are exposed from one of the two first side surfaces 43. With this configuration, when the semiconductor device A20 is mounted on a wiring substrate, the volume of solder adhering to each of the first terminal 21, the second terminal 22, the third terminal 23, and the fourth terminal 24 increases. This increases the bonding strength of the semiconductor device A20 to the wiring substrate.

[0068] The present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the present disclosure can be freely modified in various ways.

[0069] The present disclosure includes embodiments described in the following supplementary notes. Supplementary note 1. A semiconductor device comprising: a semiconductor element having a first electrode and a gate electrode; a first terminal conductive to the first electrode; a second terminal conductive to the gate electrode; and a third terminal conductive to the first electrode, wherein a direction of current flowing through each of the first terminal and the third terminal is opposite a direction of current flowing through the second terminal, the second terminal is located adjacent to the first terminal, and the third terminal is located on the opposite side of the first terminal with respect to the second terminal. Supplementary note 2. The semiconductor device according to supplementary note 1, wherein the semiconductor element has a second electrode located on the opposite side of the first electrode in a first direction, the gate electrode is located on the same side as the first electrode in the first direction, and further comprising a fourth terminal conductive to the second electrode. Supplementary note 3. The semiconductor device according to supplementary note 2, wherein the first terminal, the second terminal, and the third terminal are arranged along a second direction orthogonal to the first direction, and the third terminal is located adjacent to the second terminal. Supplementary note 4. Appendix 3: The semiconductor device according to Appendix 3, further comprising a sealing resin covering the semiconductor element, wherein the first terminal, the second terminal, the third terminal, and the fourth terminal are exposed from the sealing resin. Appendix 5: The semiconductor device according to Appendix 4, further comprising: a first conductive member conductively joined to the first electrode and the first terminal; a second conductive member conductively joined to the gate electrode and the second terminal; and a third conductive member conductively joined to the first electrode and the third terminal, wherein the first conductive member, the second conductive member, and the third conductive member are covered by the sealing resin, and the second conductive member is located adjacent to the first conductive member. Appendix 6: The semiconductor device according to Appendix 5, wherein the second conductive member includes a section located between the first conductive member and the third conductive member. Appendix 7: The semiconductor device according to Appendix 5 or 6, wherein a dimension of the first terminal in a third direction perpendicular to the first direction and the second direction is greater than a conductive path length of the first conductive member. Appendix 8: 8. The semiconductor device according to claim 7, wherein, when viewed in the first direction, portions of the first terminal, the second terminal, the third terminal, and the fourth terminal exposed from the sealing resin extend in the third direction.Appendix 9. The semiconductor device according to Appendix 8, wherein the fourth terminal is located on the opposite side of the first terminal from the second terminal in the second direction. Appendix 10. The semiconductor device according to Appendix 9, wherein the minimum distance between the portions of the first terminal and the fourth terminal exposed from the sealing resin is larger than the minimum distance between the portions of the first terminal and the second terminal exposed from the sealing resin. Appendix 11. The semiconductor device according to Appendix 9 or 10, further comprising a die pad, wherein the second electrode is conductively bonded to the die pad, and the fourth terminal is connected to the die pad. Appendix 12. The semiconductor device according to Appendix 11, wherein the die pad is exposed from the sealing resin. Appendix 13. The semiconductor device according to Appendix 5 or 6, wherein a dimension of the first terminal in a third direction orthogonal to the first and second directions is smaller than the conductive path length of the first conductive member. Appendix 14. The semiconductor device according to Appendix 13, wherein the fourth terminal is spaced apart from the first terminal in the third direction, and the second electrode is conductively joined to the fourth terminal. Appendix 15. The semiconductor device according to Appendix 14, wherein the sealing resin has a bottom surface facing the first direction, and the first terminal, the second terminal, the third terminal, and the fourth terminal are exposed from the bottom surface. Appendix 16. The semiconductor device according to Appendix 15, wherein the sealing resin has two first side surfaces facing opposite each other in the third direction, and the first terminal, the second terminal, the third terminal, and the fourth terminal are exposed from either of the two first side surfaces.

[0070] A10, A20: Semiconductor element 10: Semiconductor element 11: First electrode 12: Gate electrode 13: Second electrode 20: Die pad 201: Mounting surface 202: Back surface 203: Through hole 21: First terminal 211: Covered portion 212: Exposed portion 213: First bonding surface 214: Mounting surface 215: Side surface 216: Inner surface 217: Overhang portion 218: Hanging portion 218A: End surface 22: Second terminal 221: Covered portion 222: Exposed portion 223: Second bonding surface 224: Mounting surface 225: Side surface 226: Inner surface 227: Overhang portion 23: Third terminal 231: Covered portion 232: Exposed portion 233: Third bonding surface 234: Mounting surface 235: Side surface 236: Inner surface 237: Canopy portion 238: Hanging portion 238A: End surface 24: Fourth terminal 241: Covering portion 242: Exposed portion 243: Mounting surface 244: Mounting surface 245: Side surface 246: Inner peripheral surface 247: Canopy portion 248: Hanging portion 248A: End surface 29: Conductive bonding layer 31: First conductive member 32: Second conductive member 33: Third conductive member 40: Sealing resin 41: Top surface 42: Bottom surface 43: First side surface 44: Second side surface 45: Opening 46: Mounting hole z: First direction x: Second direction y: Third direction

Claims

1. a semiconductor element having a first electrode and a gate electrode; a first terminal electrically connected to the first electrode; a second terminal in electrical communication with the gate electrode; a third terminal electrically connected to the first electrode; a direction of a current flowing through each of the first terminal and the third terminal is opposite to a direction of a current flowing through the second terminal; the second terminal is located adjacent to the first terminal, The third terminal is located on the opposite side of the first terminal with respect to the second terminal.

2. the semiconductor element has a second electrode located on the opposite side to the first electrode in a first direction; the gate electrode is located on the same side as the first electrode in the first direction, The semiconductor device according to claim 1 , further comprising a fourth terminal electrically connected to said second electrode.

3. the first terminal, the second terminal, and the third terminal are arranged along a second direction perpendicular to the first direction, The semiconductor device according to claim 2 , wherein the third terminal is located adjacent to the second terminal.

4. Further comprising a sealing resin for covering the semiconductor element, The semiconductor device according to claim 3 , wherein the first terminal, the second terminal, the third terminal and the fourth terminal are exposed from the sealing resin.

5. a first conductive member conductively connected to the first electrode and the first terminal; a second conductive member conductively connected to the gate electrode and the second terminal; a third conductive member conductively connected to the first electrode and the third terminal, the first conductive member, the second conductive member, and the third conductive member are covered with the sealing resin; The semiconductor device according to claim 4 , wherein the second conductive member is located adjacent to the first conductive member.

6. The semiconductor device according to claim 5 , wherein the second conductive member includes a section located between the first conductive member and the third conductive member.

7. 7. The semiconductor device according to claim 5, wherein a dimension of said first terminal in a third direction perpendicular to said first direction and said second direction is greater than a conductive path length of said first conductive member.

8. 8. The semiconductor device according to claim 7, wherein when viewed in the first direction, a portion of each of the first terminal, the second terminal, the third terminal and the fourth terminal exposed from the sealing resin extends in the third direction.

9. The semiconductor device according to claim 8 , wherein the fourth terminal is located on an opposite side to the second terminal with respect to the first terminal in the second direction.

10. 10. The semiconductor device according to claim 9, wherein a minimum distance between the portions of the first terminal and the fourth terminal exposed from the sealing resin is greater than a minimum distance between the portions of the first terminal and the second terminal exposed from the sealing resin.

11. Further comprising a die pad; the second electrode is conductively connected to the die pad; The semiconductor device according to claim 9 , wherein the fourth terminal is connected to the die pad.

12. The semiconductor device according to claim 11 , wherein the die pad is exposed from the sealing resin.

13. 7. The semiconductor device according to claim 5, wherein a dimension of said first terminal in a third direction perpendicular to said first direction and said second direction is smaller than a conductive path length of said first conductive member.

14. the fourth terminal is spaced from the first terminal in the third direction; The semiconductor device according to claim 13 , wherein the second electrode is conductively connected to the fourth terminal.

15. the sealing resin has a bottom surface facing the first direction, The semiconductor device according to claim 14 , wherein the first terminal, the second terminal, the third terminal and the fourth terminal are exposed from the bottom surface.

16. the sealing resin has two first side surfaces facing opposite directions to each other in the third direction; The semiconductor device according to claim 15 , wherein the first terminal, the second terminal, the third terminal and the fourth terminal are exposed from either of the two first side surfaces.