Semiconductor device and method for producing semiconductor device

Abstract

A semiconductor device comprising a first lead 1A, which includes a die pad part 11 having a first main surface 111, which faces a z1 side along the thickness direction z, and a first back surface 112, which faces a z2 side along the thickness direction z, a semiconductor element 2 supported by the first main surface 111, a conduction part 31 disposed on the z1 side of the semiconductor element 2 along the thickness direction z and electrically connected to the semiconductor element 2, and an encapsulating resin 7 covering both at least some of the die pad part 11 and the semiconductor element 2, wherein the conduction part 31 has an electroconductive main surface 311 facing the z1 side along the thickness direction z and the encapsulating resin 7 has a resin main surface 71 facing the z1 side along the thickness direction z and a recess 710 depressed from the resin main surface 71 toward the z2 side along the thickness direction z. The recess 710 is in contact with the electroconductive main surface 311, and at least some of the electroconductive main surface 311 is not covered with the encapsulating resin 7.

Description

Semiconductor device and method for manufacturing the same

[0001] The present disclosure relates to a semiconductor device and a method for manufacturing a semiconductor device.

[0002] Various configurations have been proposed for semiconductor devices including semiconductor elements. Patent Document 1 discloses an example of a conventional semiconductor device. The semiconductor device disclosed in this document includes a semiconductor element, multiple leads, and a sealing resin. The semiconductor element is supported by the leads. The semiconductor element is a transistor with a switching function. An electrode (source electrode) of the semiconductor element on the lead is connected to the other leads by multiple wires. The sealing resin covers a portion of each lead, the semiconductor element, and the multiple wires. In the semiconductor device disclosed in Patent Document 1, connecting multiple wires to the source electrode of the semiconductor element makes it suitable for passing large currents and capable of handling high output. However, as the output of semiconductor devices increases, the amount of heat generated by the semiconductor element increases, and therefore, improved heat dissipation performance of the semiconductor device is required.

[0003] Japanese Patent Application Laid-Open No. 2017-135241

[0004] An object of the present disclosure is to provide an improved semiconductor device compared to conventional semiconductor devices. In particular, in view of the above-mentioned circumstances, an object of the present disclosure is to provide a semiconductor device suitable for improving heat dissipation.

[0005] A semiconductor device provided by a first aspect of the present disclosure includes a first lead including a die pad portion having a first main surface facing one side in a thickness direction and a first back surface facing the other side in the thickness direction, a semiconductor element supported on the first main surface, a conductive portion disposed on one side of the semiconductor element in the thickness direction and conductively joined to the semiconductor element, and a sealing resin covering at least a portion of the die pad portion and the semiconductor element. The conductive portion has a conductive main surface facing one side in the thickness direction. The sealing resin has a resin main surface facing one side in the thickness direction, a resin back surface spaced from the resin main surface to the other side in the thickness direction and facing the other side in the thickness direction, and a recess recessed from the resin main surface to the other side in the thickness direction. The recess is in contact with the conductive main surface. At least a portion of the conductive main surface is exposed from the sealing resin.

[0006] A second aspect of the present disclosure provides a method for manufacturing a semiconductor device including: a first lead including a die pad portion having a first main surface facing one side in a thickness direction and a first back surface facing the other side in the thickness direction; a semiconductor element supported on the first main surface; a conductive portion disposed on one side of the semiconductor element in the thickness direction and conductively joined to the semiconductor element; and a sealing resin covering at least a portion of the die pad portion and the semiconductor element. The conductive portion has a conductive main surface facing one side in the thickness direction. The sealing resin has a resin main surface facing one side in the thickness direction. The method includes a step of irradiating the resin main surface with a laser to form a recess exposing at least a portion of the conductive main surface.

[0007] According to the above configuration, it is possible to improve the heat dissipation performance of the semiconductor device.

[0008] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0009] FIG. 1 is a plan view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a bottom view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 3 is a plan view showing a semiconductor device according to a first embodiment of the present disclosure (transmitted through a sealing resin). FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. 3. FIG. 5 is a cross-sectional view taken along line V-V in FIG. 3. FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. 3. FIG. 7 is a cross-sectional view showing a step of an example of a method for manufacturing a semiconductor device according to a first embodiment of the present disclosure. FIG. 8 is a cross-sectional view showing a step subsequent to FIG. 7. FIG. 9 is a cross-sectional view showing a step subsequent to FIG. 7. FIG. 10 is a cross-sectional view similar to FIG. 4, showing a semiconductor device according to a first modification of the first embodiment. FIG. 11 is a cross-sectional view similar to FIG. 4, showing a semiconductor device according to a second modification of the first embodiment. FIG. 12 is a plan view showing a semiconductor device according to a second embodiment of the present disclosure. FIG. 13 is a plan view showing a semiconductor device according to a second embodiment of the present disclosure (transmitted through a sealing resin). FIG. 14 is a cross-sectional view taken along line XIV-XIV in FIG. 13. Fig. 15 is a cross-sectional view taken along line XV-XV in Fig. 13. Fig. 16 is a cross-sectional view taken along line XVI-XVI in Fig. 13. Fig. 17 is a cross-sectional view showing a step of an example of a method for manufacturing a semiconductor device according to a second embodiment of the present disclosure. Fig. 18 is a cross-sectional view showing a step subsequent to Fig. 17. Fig. 19 is a cross-sectional view showing a step subsequent to Fig. 18. Fig. 20 is a cross-sectional view similar to Fig. 14, showing a semiconductor device according to a first modification of the second embodiment.

[0010] Preferred embodiments of the present disclosure will now be described in detail with reference to the drawings.

[0011] Terms such as "first," "second," and "third" in this disclosure are used merely as labels and are not necessarily intended to dictate any ordering of their objects.

[0012] In this disclosure, unless otherwise specified, "a certain object A is formed on a certain object B" and "a certain object A is formed on a certain object B" include "a certain object A is formed directly on a certain object B" and "a certain object A is formed on a certain object B with another object interposed between the certain object A and the certain object B." Similarly, "a certain object A is disposed on a certain object B" and "a certain object A is disposed on a certain object B" include "a certain object A is disposed directly on a certain object B" and "a certain object A is disposed on a certain object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is located on a certain object B" includes "a certain object A is located on a certain object B with a certain object A in contact with the certain object B" and "a certain object A is located on a certain object B with another object interposed between the certain object A and the certain object B." Furthermore, unless otherwise specified, the phrase "an object A overlaps an object B when viewed in a certain direction" includes "an object A overlaps the entire object B" and "an object A overlaps a part of an object B." Furthermore, in the present disclosure, "a surface A faces in (one side or the other side of) direction B" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is tilted with respect to direction B.

[0013] 1 to 6, a semiconductor device A10 according to a first embodiment of the present disclosure will be described. The semiconductor device A10 includes a first lead 1A, a second lead 1B, a third lead 1C, a semiconductor element 2, a conductive member 3, a heat dissipation portion 4, conductive bonding materials 61, 62, and 63, and a sealing resin 7.

[0014] FIG. 1 is a plan view showing the semiconductor device A10. FIG. 2 is a bottom view showing the semiconductor device A10. FIG. 3 is a plan view showing the semiconductor device A10. FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. 3. FIG. 5 is a cross-sectional view taken along line V-V in FIG. 3. FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. 3. For ease of understanding, FIG. 3 shows the sealing resin 7 through which light passes. In these figures, the through sealing resin 7 is indicated by an imaginary line (two-dot chain line).

[0015] In the description of the semiconductor device A10, the thickness direction (direction in a plan view) of the semiconductor element 2 is referred to as the "thickness direction z." The direction perpendicular to the thickness direction z (the up-down direction in FIG. 1) is referred to as the "first direction x." The direction perpendicular to the thickness direction z and the first direction x (the left-right direction in FIG. 1) is referred to as the "second direction y." As shown in FIGS. 1 and 2, the semiconductor device A10 has a substantially rectangular shape when viewed in the thickness direction z. Furthermore, in the description of the semiconductor device A10, for convenience, the upper side in FIG. 1 is referred to as the "x1 side of the first direction x," and the lower side in FIG. 1 is referred to as the "x2 side of the first direction x." In FIG. 1, the right side is referred to as the "y1 side of the second direction y," and the left side is referred to as the "y2 side of the second direction y." In Figures 4 to 6, the upper side in the figure is an example of "one side in the thickness direction" in the present disclosure and is called the "z1 side in the thickness direction z," and the lower side in the figure is an example of "the other side in the thickness direction" in the present disclosure and is called the "z2 side in the thickness direction z."

[0016] The first lead 1A, the second lead 1B, and the third lead 1C are formed, for example, by punching or bending a metal plate. The constituent material of the first lead 1A, the second lead 1B, and the third lead 1C is, for example, copper (Cu) or nickel (Ni), or an alloy thereof. The thickness of the first lead 1A, the second lead 1B, and the third lead 1C is, for example, 0.1 mm to 0.3 mm.

[0017] 3, the first lead 1A is arranged to be spaced apart from the second lead 1B and the third lead 1C in the first direction x. The second lead 1B and the third lead 1C are aligned in the second direction y. The first lead 1A, the second lead 1B, and the third lead 1C are arranged to be spaced apart from each other when viewed in the thickness direction z. The size when viewed in the thickness direction z is the largest for the first lead 1A and the smallest for the third lead 1C.

[0018] As shown in FIGS. 3 to 6 , the first lead 1A has a die pad portion 11 and multiple (four in this embodiment) terminal portions 12. The die pad portion 11 is, for example, rectangular when viewed in the thickness direction z. The die pad portion 11 has a first main surface 111 and a first back surface 112. The first main surface 111 faces the z1 side in the thickness direction z, and the first back surface 112 faces the opposite side to the first main surface 111 (the z1 side in the thickness direction z). A semiconductor element 2 is mounted on the first main surface 111. As shown in FIGS. 2 and 4 , the first back surface 112 is exposed from the sealing resin 7. The first back surface 112 is a portion to be bonded with a bonding material such as solder when the semiconductor device A10 is mounted on a circuit board (not shown).

[0019] The multiple terminal portions 12 are located on the x1 side in the first direction x with respect to the die pad portion 11. Each of the multiple terminal portions 12 is connected to the x1 side in the first direction x of the die pad portion 11 and extends toward the x1 side in the first direction x. The multiple terminal portions 12 are arranged at intervals in the second direction y. Each of the multiple terminal portions 12 has a back surface mounting portion 121. The back surface mounting portion 121 faces the z2 side in the thickness direction z (the lower side in FIG. 4 ). The back surface mounting portion 121 is exposed from the sealing resin 7. The back surface mounting portion 121 is a portion that is bonded with a bonding material such as solder when the semiconductor device A10 is mounted on a circuit board (not shown).

[0020] 3 and 4, the second lead 1B has a pad portion 13, a plurality of (three in this embodiment) terminal portions 14, and a plurality of (three in this embodiment) bent portions 15. The pad portion 13 is located on the z1 side in the thickness direction z (upper side in FIG. 4) with respect to the plurality of terminal portions 14. The pad portion 13 is also located inward in the first direction x with respect to the plurality of terminal portions 14.

[0021] The multiple terminal portions 14 are located on the x2 side in the first direction x with respect to the die pad portion 11 of the first lead 1A. The multiple terminal portions 14 are arranged at intervals in the second direction y. Each of the multiple terminal portions 14 has a back surface mounting portion 141. The back surface mounting portion 141 faces the z2 side in the thickness direction z (the lower side in FIG. 4 ). The back surface mounting portion 141 is exposed from the sealing resin 7. The back surface mounting portion 141 is a portion that is joined with a joining material such as solder when the semiconductor device A10 is mounted on a circuit board (not shown). The multiple bent portions 15 individually connect the pad portion 13 and the multiple terminal portions 14 and have a bent shape when viewed in the second direction y.

[0022] 3 and 5, the third lead 1C has a pad portion 16, a terminal portion 17, and a bent portion 18. The pad portion 16 is located on the z1 side in the thickness direction z (upper side in FIG. 5) with respect to the terminal portion 17. The pad portion 16 is also located inward in the first direction x with respect to the terminal portion 17.

[0023] The terminal portion 17 is located on the x2 side in the first direction x with respect to the die pad portion 11 of the first lead 1A. The multiple terminal portions 14 of the second lead 1B and the terminal portion 17 of the third lead 1C are arranged at intervals in the second direction y. The terminal portion 17 has a back surface mounting portion 171. The back surface mounting portion 171 faces the z2 side in the thickness direction z (the lower side in FIG. 5 ). The back surface mounting portion 171 is exposed from the sealing resin 7. The back surface mounting portion 171 is a portion that is joined with a joining material such as solder when the semiconductor device A10 is mounted on a circuit board (not shown). The bent portion 18 connects the pad portion 16 and the terminal portion 17 and has a bent shape when viewed in the second direction y.

[0024] In this embodiment, the surfaces of the first lead 1A, the second lead 1B, and the third lead 1C that are exposed from the sealing resin 7 are covered with a metal layer 19. The metal layer 19 is a metal plating that is laminated on the surfaces of the portions that are exposed from the sealing resin 7. The constituent material of the metal plating (metal layer 19) is not particularly limited, and includes, for example, nickel, or nickel and palladium (Pd).

[0025] The semiconductor element 2 is an element that performs the electrical functions of the semiconductor device A10. The type of semiconductor element 2 is not particularly limited, and in this embodiment, the semiconductor element 2 is a power semiconductor chip with a switching function, such as a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). The semiconductor element 2 may also be a switching element such as an IGBT (Insulated Gate Bipolar Transistor) or a diode. As shown in FIGS. 3 to 5 , the semiconductor element 2 has an element body 20, a source electrode 21, a drain electrode 22, and a gate electrode 23.

[0026] The element body 20 has a rectangular shape when viewed in the thickness direction z. The element body 20 has an element main surface 201 and an element back surface 202. The element main surface 201 and the element back surface 202 face opposite each other in the thickness direction z. The element main surface 201 faces the same side as the first main surface 111 of the die pad portion 11 in the thickness direction z. Therefore, the element back surface 202 faces the first main surface 111.

[0027] The source electrode 21 and the gate electrode 23 are disposed on the main surface 201 of the device. The drain electrode 22 is disposed on the rear surface 202 of the device. The constituent materials of the source electrode 21, the drain electrode 22, and the gate electrode 23 are, for example, copper, aluminum (Al), or an alloy thereof.

[0028] In this embodiment, the source electrode 21 covers most of the device principal surface 201. Specifically, the source electrode 21 is disposed in a region of the rectangular device principal surface 201 excluding the periphery and one corner (the lower right corner in FIG. 3 ). The gate electrode 23 is disposed in one corner of the device principal surface 201 (the lower right corner in FIG. 3 ). The drain electrode 22 covers substantially the entire device rear surface 202.

[0029] The drain electrode 22 is electrically joined to the first main surface 111 (die pad portion 11) via a conductive bonding material 62. The conductive bonding material 62 electrically connects the die pad portion 11 and the drain electrode 22. The conductive bonding material 62 is, for example, solder.

[0030] The semiconductor device A10 includes a wire 68. As shown in Figures 3 and 5, the wire 68 is electrically connected to the gate electrode 23 and the pad portion 16 of the third lead 1C. The wire 68 electrically connects the gate electrode 23 and the third lead 1C.

[0031] 3 and 4 , the conductive member 3 is joined to the source electrode 21 of the semiconductor element 2 and the second lead 1B. The conductive member 3 is made of a metal plate material. The conductive member 3 is made of, for example, copper or a copper alloy. The conductive member 3 is a metal plate material that has been subjected to, for example, a punching process or a bending process. In this embodiment, the conductive member 3 has a conductive portion 31, a lead-side joint portion 32, and an intermediate portion 33. As shown in FIG. 4 , the conductive portion 31, the lead-side joint portion 32, and the intermediate portion 33 are connected by being appropriately bent when viewed in the second direction y.

[0032] The conductive portion 31 is disposed on the z1 side in the thickness direction z of the semiconductor element 2. The conductive portion 31 is joined to the source electrode 21 via a conductive bonding material 61. The conductive bonding material 61 electrically connects the conductive portion 31 (conductive member 3) and the source electrode 21. The conductive bonding material 61 is, for example, solder. The conductive portion 31 has a conductive main surface 311. The conductive main surface 311 faces the z1 side in the thickness direction z.

[0033] The lead-side joint 32 is joined to the pad 13 of the second lead 1B via a conductive bonding material 63. The conductive bonding material 63 electrically connects the lead-side joint 32 (conductive member 3) and the pad 13 (second lead 1B). The conductive bonding material 63 is, for example, solder. As shown in FIG. 4 , the lead-side joint 32 has a convex portion located on the z2 side (lower side in the figure) in the thickness direction z from the surrounding area. When the pad 13 and the lead-side joint 32 are joined, the convex portion is pressed against the pad 13, and a sufficient amount of conductive bonding material 63 is present around the convex portion. This ensures proper conductivity between the lead-side joint 32 and the pad 13.

[0034] The intermediate portion 33 is located between the conductive portion 31 and the lead-side joint portion 32 in the first direction x. The intermediate portion 33 is connected to both the conductive portion 31 and the lead-side joint portion 32. As a result, the conductive portion 31 is electrically connected to the pad portion 13 (second lead 1B) via the intermediate portion 33 and the lead-side joint portion 32. The conductive member 3 forms a path for a main current switched by the semiconductor element 2.

[0035] In this embodiment, the conductive portion 31 is thicker than the lead-side joint portion 32 and the intermediate portion 33. The intermediate portion 33 is formed integrally with the conductive portion 31. In the illustrated example, as shown in FIGS. 3 and 4 , the intermediate portion 33 is connected to an end of the conductive portion 31 closer to the y2 side in the second direction y and on the z2 side in the thickness direction z, and extends toward the x2 side in the first direction x. Note that the conductive member 3 having the conductive portion 31 is not limited to the above configuration. The conductive member 3 may be configured such that the conductive portion 31, the lead-side joint portion 32, and the intermediate portion 33 each have a substantially uniform thickness.

[0036] The heat dissipation portion 4 is disposed on the z1 side in the thickness direction z of the conductive portion 31. The heat dissipation portion 4 is filled in a recess 710 of the sealing resin 7, which will be described later. The recess 710 is recessed from a resin main surface 71 of the sealing resin 7, which will be described later, to the z2 side in the thickness direction z, and is in contact with the conductive main surface 311.

[0037] In this embodiment, the heat dissipation portion 4 is a metal plating layered on the conductive principal surface 311. The heat dissipation portion 4 is layered on the portion of the conductive principal surface 311 that contacts the recess 710. There are no particular limitations on the material that can be used for the heat dissipation portion 4, and examples of such materials include metal materials with high thermal conductivity, such as copper and silver (Ag).

[0038] The heat dissipation portion 4 has a first heat dissipation surface 41. The first heat dissipation surface 41 faces the z1 side in the thickness direction z. The first heat dissipation surface 41 is exposed from the sealing resin 7. Unlike the example shown in the figure, the recess 710 may not be filled with the heat dissipation portion 4. In this case, the portion of the conductive main surface 311 that contacts the recess 710 is exposed to the outside.

[0039] The sealing resin 7 covers a portion of each of the first lead 1A, the second lead 1B, and the third lead 1C, the semiconductor element 2, the wire 68, the conductive member 3, and a portion of the heat dissipation portion 4. The sealing resin 7 is made of, for example, a black epoxy resin. The sealing resin 7 is formed by molding. The heat dissipation portion 4, which is made of metal, has a higher thermal conductivity than the sealing resin 7.

[0040] 1, 2, 4, and 6, the sealing resin 7 has a resin main surface 71, a recess 710, a resin back surface 72, and resin side surfaces 73 to 76. The resin main surface 71 and the resin back surface 72 face opposite sides in the thickness direction z. The resin main surface 71 faces the z1 side in the thickness direction z, and faces the same side as the element main surface 201 and the first main surface 111.

[0041] The recess 710 is recessed from the resin main surface 71 toward the z2 side in the thickness direction z. The depth of the recess 710 (dimension in the thickness direction z) is not particularly limited, and is, for example, about 10 to 300 μm. The recess 710 contacts the conductive main surface 311 of the conductive portion 31. In this embodiment, the recess 710 contacts a part of the conductive main surface 311. The recess 710 is filled with the heat dissipation portion 4 described above.

[0042] As shown in FIG. 1 , the resin main surface 71 has a frame shape surrounding the first heat dissipation surface 41 of the heat dissipation unit 4 in a plan view (viewed in the thickness direction z). The first heat dissipation surface 41 of the heat dissipation unit 4 is exposed from this resin main surface 71. In the illustrated example, the first heat dissipation surface 41 is flush with the resin main surface 71. Unlike the illustrated example, the first heat dissipation surface 41 may be located on the z1 side of the resin main surface 71 in the thickness direction z. In this case, the heat dissipation unit 4 protrudes from the resin main surface 71 toward the z1 side in the thickness direction z. Furthermore, the first heat dissipation surface 41 may be located on the z2 side of the resin main surface 71 in the thickness direction z. In this case, the heat dissipation unit 4 is recessed from the resin main surface 71 toward the z2 side in the thickness direction z.

[0043] The resin back surface 72 faces the z2 side in the thickness direction z, and faces the same side as the element back surface 202 and the first back surface 112. As shown in FIG. 2 , the first back surface 112 of the die pad portion 11 is exposed from the resin back surface 72. The first back surface 112 is, for example, flush with the resin back surface 72. Also, the back surface mounting portion 121 of each of the multiple terminal portions 12, the back surface mounting portion 141 of each of the multiple terminal portions 14, and the back surface mounting portion 171 of the terminal portion 17 are exposed from the resin back surface 72. Note that the first back surface 112 of the die pad portion 11 may be covered with the sealing resin 7, unlike the example shown in the drawings.

[0044] Each of the resin side surfaces 73 to 76 is connected to the resin main surface 71 and the resin back surface 72 and is sandwiched between the resin main surface 71 and the resin back surface 72 in the thickness direction z. The resin side surface 73 and the resin side surface 74 face opposite each other in the first direction x. The resin side surface 73 faces the x1 side of the first direction x, and the resin side surface 74 faces the x2 side of the first direction x. The resin side surface 75 and the resin side surface 76 face opposite each other in the second direction y. The resin side surface 75 faces the y1 side of the second direction y, and the resin side surface 76 faces the y2 side of the second direction y. As shown in FIG. 1 , a portion of each of the multiple terminal portions 12 protrudes from the resin side surface 73. Furthermore, a portion of each of the multiple terminal portions 14 and 17 protrudes from the resin side surface 74. In the illustrated example, the resin side surfaces 73 to 76 are each slightly inclined with respect to the thickness direction z. 1, 2, and 4 to 6 are merely examples, and the shape of the sealing resin 7 is not limited to the illustrated shapes.

[0045] Next, an example of a method for manufacturing the semiconductor device A10 will be described below with reference to Figures 7 to 9. Figures 7 to 9 are cross-sectional views showing a step in the method for manufacturing the semiconductor device A10, and are cross-sectional views similar to the cross section shown in Figure 4. Figures 7 to 9 show a step of forming a recess 710 in the sealing resin 7 and filling the recess 710 with the heat dissipation portion 4.

[0046] FIG. 7 shows the state after the sealing resin 7 has been formed by molding. At this time, the sealing resin 7 covers the entire conductive principal surface 311. Next, a laser 9 is irradiated onto a portion of the resin principal surface 71. Here, the laser 9 is irradiated onto an area that overlaps with the conductive principal surface 311 when viewed in the thickness direction z. In the area of ​​the resin principal surface 71 irradiated with the laser 9, the sealing resin 7 is partially removed. The laser 9 is irradiated until the conductive principal surface 311 is exposed. As a result, a recess 710 is formed, as shown in FIG. 8 . By forming the recess 710, a portion of the conductive principal surface 311 is exposed from the sealing resin 7.

[0047] 9 , the recess 710 is filled with the heat dissipation portion 4. The recess 710 is filled with the heat dissipation portion 4 by plating the portion of the conductive principal surface 311 that is exposed from the sealing resin 7. The heat dissipation portion 4 is formed, for example, by electrolytic plating or electroless plating. Here, the heat dissipation portion 4 is laminated on the portion of the conductive principal surface 311 that is exposed from the sealing resin 7, and a metal layer 19 is formed on the surfaces of the portions of the first lead 1A, the second lead 1B, and the third lead 1C that are exposed from the sealing resin 7 (the first back surface 112 of the die pad portion 11, the plurality of terminal portions 12, etc.). Through these steps, the semiconductor device A10 in which the heat dissipation portion 4 is filled in the recess 710 is manufactured.

[0048] Next, the operation of this embodiment will be described.

[0049] The semiconductor device A10 includes a semiconductor element 2 supported on a first main surface 111 of a die pad portion 11 (first lead 1A), a conductive portion 31 electrically connected to the z1 side of the semiconductor element 2 in the thickness direction z, and a sealing resin 7. The conductive portion 31 has a conductive main surface 311 facing the z1 side of the thickness direction z. The sealing resin 7 has a resin main surface 71 facing the z1 side of the thickness direction z and a recess 710 recessed from the resin main surface 71 toward the z2 side of the thickness direction z. The recess 710 is in contact with the conductive main surface 311, and a portion of the conductive main surface 311 in contact with the recess 710 is exposed from the sealing resin 7. This configuration allows heat generated in the semiconductor element 2 to dissipate from the portion of the conductive main surface 311 in contact with the recess 710. Therefore, according to the semiconductor device A10 in which the recess 710 is formed in the sealing resin 7, the thermal resistance on the z1 side of the thickness direction z of the conductive main surface 311 can be reduced, thereby improving heat dissipation performance.

[0050] The recess 710 in the sealing resin 7 is filled with a heat dissipation portion 4. The heat dissipation portion 4 has a first heat dissipation surface 41 facing the z1 side in the thickness direction z, and the first heat dissipation surface 41 is exposed from the resin main surface 71 of the sealing resin 7. The thermal conductivity of the heat dissipation portion 4 is higher than that of the sealing resin 7. With this configuration, heat generated in the semiconductor element 2 can be dissipated from the first heat dissipation surface 41 via the conductive portion 31 and the heat dissipation portion 4. The first heat dissipation surface 41 faces the opposite side from the first back surface 112, which is the mounting surface of the first lead 1A (die pad portion 11). By closely attaching a heat sink or the like (not shown) to this first heat dissipation surface 41, heat generated in the semiconductor element 2 can be efficiently dissipated from the opposite side of the die pad portion 11 (the z1 side in the thickness direction z) from the semiconductor element 2. The semiconductor device A10 configured as described above has a structure suitable for improving heat dissipation. Furthermore, the first heat dissipation surface 41 of the heat dissipation portion 4 is flush with the resin main surface 71 of the sealing resin 7. With this configuration, a heat sink or the like can be easily attached to the entire first heat dissipation surface 41. This is preferable in terms of improving the heat dissipation performance of the semiconductor device A10.

[0051] The heat dissipation portion 4 is formed by a metal plating layer laminated on the conductive principal surface 311. With this configuration, the heat dissipation portion 4 can be appropriately filled in the portion of the conductive principal surface 311 that contacts the recess 710.

[0052] First Modification of First Embodiment: Figure 10 shows a semiconductor device according to a first modification of the first embodiment. Figure 10 is a cross-sectional view showing a semiconductor device A11 of this modification, and shows the same cross section as Figure 4 shown in the above embodiment. In the figures from Figure 10 onwards, elements that are the same as or similar to those of the semiconductor device A10 of the above embodiment are given the same reference numerals as in the above embodiment, and descriptions thereof will be omitted as appropriate.

[0053] In the semiconductor device A11 of this modification, the thickness (dimension in the thickness direction z) of the heat dissipation section 4 is larger than that of the semiconductor device A10 of the above embodiment. As a result, the first heat dissipation surface 41 of the heat dissipation section 4 is located on the z1 side of the resin main surface 71 in the thickness direction z. The heat dissipation section 4 protrudes from the resin main surface 71 toward the z1 side in the thickness direction z. The heat dissipation section 4 having such a configuration is obtained by adjusting the thickness of the heat dissipation section 4 formed on the conductive main surface 311 by plating so that it is relatively large. Furthermore, as the heat dissipation section 4 is formed, the thickness of the metal layer 19 formed on the first lead 1A, the second lead 1B, and the third lead 1C also becomes relatively large. The semiconductor device A11 also achieves the same effects as the semiconductor device A10. Furthermore, in the semiconductor device A11, as described above, the heat dissipation section 4 protrudes from the resin main surface 71 toward the z1 side in the thickness direction z, and the first heat dissipation surface 41 is located on the z1 side in the thickness direction z. This configuration allows the heat sink or the like to be more reliably attached to the entire first heat dissipation surface 41. This prevents a gap from being formed between the first heat dissipation surface 41 and the heat sink or the like. This is preferable in terms of improving the heat dissipation performance of the semiconductor device A11.

[0054] Second Modification of First Embodiment: Fig. 11 shows a semiconductor device according to a second modification of the first embodiment. Fig. 11 is a cross-sectional view showing a semiconductor device A12 of this modification, and shows a cross section similar to Fig. 4 shown in the above embodiment.

[0055] In the semiconductor device A12 of this modification, the configuration of the heat dissipation portion 4 filled in the recess 710 differs from that of the semiconductor device A10 of the above embodiment. In this modification, the heat dissipation portion 4 is made of a thermally conductive material. The thermally conductive material has high thermal conductivity and is suitable for improving the heat dissipation performance of the semiconductor device A12. The type and material of the thermally conductive material constituting the heat dissipation portion 4 are not particularly limited, and an appropriate material selected from, for example, thermally conductive grease, thermally conductive paste, and thermally conductive sheet can be used. Here, silver (Ag) paste or copper paste is preferably used as the thermally conductive material constituting the heat dissipation portion 4. In the illustrated example, the first heat dissipation surface 41 is flush with the resin main surface 71. In the semiconductor device A12, a heat sink or the like (not shown) is pressed against the first heat dissipation surface 41 and heated, thereby tightly bonding the heat sink or the like to the first heat dissipation surface 41. This allows heat generated by the semiconductor element 2 to be efficiently dissipated from the side opposite the die pad portion 11 (the z1 side in the thickness direction z) of the semiconductor element 2. In addition, the semiconductor device A10 has the same effects as the semiconductor device A10.

[0056] Second Embodiment: Figures 12 to 16 show a semiconductor device according to a second embodiment of the present disclosure. Figure 12 is a plan view showing a semiconductor device A20 according to this embodiment. Figure 13 is a plan view showing the semiconductor device A20 (transmitted through the sealing resin). Figure 14 is a cross-sectional view taken along line XIV-XIV in Figure 13. Figure 15 is a cross-sectional view taken along line XV-XV in Figure 13. Figure 16 is a cross-sectional view taken along line XVI-XVI in Figure 13.

[0057] In the semiconductor device A20 of this embodiment, the configuration of the recess 710 and the configuration of the heat dissipation portion 4 filled in the recess 710 are different from those of the semiconductor device A10 of the above embodiment.

[0058] 14 to 16 , in this embodiment, the recess 710 contacts the entire conductive principal surface 311, and the entire conductive principal surface 311 is exposed from the sealing resin 7. The recess 710 has a recess bottom surface 711. The recess bottom surface 711 faces the z1 side in the thickness direction z and is annular in shape surrounding the conductive principal surface 311 as viewed in the thickness direction z. The recess bottom surface 711 is flush with the conductive principal surface 311 or is located on the z2 side of the conductive principal surface 311 in the thickness direction z. In the example shown, the recess bottom surface 711 is located on the z2 side of the conductive principal surface 311 in the thickness direction z.

[0059] In the semiconductor device A20, the heat dissipation portion 4 filled in the recess 710 is made of a thermally conductive material. The type and material of the thermally conductive material making up the heat dissipation portion 4 are not particularly limited, and an appropriate material selected from, for example, thermally conductive grease, thermally conductive paste, or thermally conductive sheet can be used. In this example, silver paste or copper paste is preferably used as the thermally conductive material making up the heat dissipation portion 4. The thermal conductivity of the heat dissipation portion 4 is higher than that of the sealing resin 7. In the illustrated example, the first heat dissipation surface 41 is flush with the resin main surface 71.

[0060] Next, an example of a method for manufacturing the semiconductor device A20 will be described below with reference to Figures 17 to 19. Figures 17 to 19 are cross-sectional views showing a step in the method for manufacturing the semiconductor device A20, and are cross-sectional views similar to the cross section shown in Figure 14. Figures 17 to 19 show a step of forming a recess 710 in the sealing resin 7 and filling the recess 710 with the heat dissipation portion 4.

[0061] FIG. 17 shows the state after the sealing resin 7 has been formed by molding. At this time, the sealing resin 7 covers the entire conductive principal surface 311. Next, a laser beam 9 is irradiated onto a portion of the resin principal surface 71. Here, the laser beam 9 is irradiated onto the region that overlaps the entire conductive principal surface 311 and the region surrounding the conductive principal surface 311 in the thickness direction z. The sealing resin 7 is partially removed from the region of the resin principal surface 71 irradiated with the laser beam 9. The laser beam 9 irradiation continues for a while even after the conductive principal surface 311 is exposed. As a result, a portion of the sealing resin 7 is further removed by the laser beam 9 irradiation in the region surrounding the conductive principal surface 311 in the thickness direction z. As shown in FIG. 18, a recess 710 having a recess bottom surface 711 is formed. The recess bottom surface 711 is located on the z2 side in the thickness direction z from the conductive principal surface 311. By forming the recess 710 , in the conductive portion 31 , the entire conductive principal surface 311 and a part of the side surface connected to the conductive principal surface 311 are exposed from the sealing resin 7 .

[0062] 19, the recess 710 is filled with the heat dissipation portion 4. The recess 710 is filled with the heat dissipation portion 4 by applying a thermally conductive material such as silver paste or copper paste and then hardening it. Here, the thermally conductive material is formed on the conductive main surface 311 and on the recess 710 surrounding it. Through these steps, the semiconductor device A20 is manufactured, in which the recess 710 is filled with the heat dissipation portion 4.

[0063] Next, the operation of this embodiment will be described.

[0064] The semiconductor device A20 includes a semiconductor element 2 supported on the first main surface 111 of the die pad portion 11 (first lead 1A), a conductive portion 31 electrically connected to the z1 side of the semiconductor element 2 in the thickness direction z, and a sealing resin 7. The conductive portion 31 has a conductive main surface 311 facing the z1 side in the thickness direction z. The sealing resin 7 has a resin main surface 71 facing the z1 side in the thickness direction z and a recess 710 recessed from the resin main surface 71 toward the z2 side in the thickness direction z. The recess 710 is in contact with the conductive main surface 311, and the entire conductive main surface 311 is exposed from the sealing resin 7. This configuration allows heat generated in the semiconductor element 2 to dissipate from the conductive main surface 311. Therefore, the semiconductor device A20 having the recess 710 formed in the sealing resin 7 can reduce the thermal resistance of the conductive main surface 311 on the z1 side in the thickness direction z, thereby improving heat dissipation.

[0065] The recess 710 in the sealing resin 7 is filled with a heat dissipation portion 4. The heat dissipation portion 4 has a first heat dissipation surface 41 facing the z1 side in the thickness direction z, and the first heat dissipation surface 41 is exposed from the resin main surface 71 of the sealing resin 7. The thermal conductivity of the heat dissipation portion 4 is higher than that of the sealing resin 7. With this configuration, heat generated in the semiconductor element 2 can be dissipated from the first heat dissipation surface 41 via the conductive portion 31 and the heat dissipation portion 4. The first heat dissipation surface 41 faces the opposite side from the first back surface 112, which is the mounting surface of the first lead 1A (die pad portion 11). By pressing a heat sink or the like (not shown) against the first heat dissipation surface 41 and heating it, the heat sink or the like is tightly bonded to the first heat dissipation surface 41. This allows heat generated in the semiconductor element 2 to be efficiently dissipated from the opposite side of the semiconductor element 2 from the die pad portion 11 (the z1 side in the thickness direction z). The semiconductor device A20 having the above-described configuration has a structure suitable for improving heat dissipation.

[0066] The recess 710 has a recess bottom surface 711. The recess bottom surface 711 faces the z1 side in the thickness direction z and is annular in shape surrounding the conductive principal surface 311 as viewed in the thickness direction z. The heat dissipation portion 4 is filled in the recess 710 having the recess bottom surface 711. This configuration allows the size of the heat dissipation portion 4 (first heat dissipation surface 41) to be increased in a plan view (as viewed in the thickness direction z). This is preferable for improving heat dissipation. Furthermore, the recess bottom surface 711 is located on the z2 side of the conductive principal surface 311 in the thickness direction z. This configuration allows the heat dissipation portion 4 to contact the entire conductive principal surface 311 and a portion of the side surface connected to the conductive principal surface 311, thereby increasing the contact area with the conductive portion 31. This is more suitable for improving heat dissipation.

[0067] First Modification of Second Embodiment: Fig. 20 shows a semiconductor device according to a first modification of the second embodiment. Fig. 20 is a cross-sectional view showing a semiconductor device A21 of this modification, and shows a cross section similar to that shown in Fig. 14 in the second embodiment.

[0068] The semiconductor device A21 of this modified example further includes a heat sink 5 compared to the semiconductor device A20 described above. The heat sink 5 is fixed to a first back surface 112 of the die pad portion 11. The first back surface 112 of the die pad portion 11 is exposed from the sealing resin 7. Meanwhile, in this embodiment, a first metal layer 52 of the heat sink 5, which will be described later, is bonded to this first back surface 112. The terminal portion 12 connected to the die pad portion 11 is appropriately bent.

[0069] The heat sink 5 is disposed on the z2 side of the die pad portion 11 in the thickness direction z. The heat sink 5 is fixed to the first back surface 112 (die pad portion 11). In this embodiment, the heat sink 5 includes an insulating layer 51, a first metal layer 52, and a second metal layer 53, which are stacked one on top of the other. The heat sink 5 is formed, for example, from a DBC (Direct Bonded Copper) substrate.

[0070] The insulating layer 51 is made of a material with relatively high thermal conductivity, such as ceramics. The material of the insulating layer 51 is not particularly limited, and examples thereof include alumina (Al2O3), aluminum nitride (AlN), and silicon nitride (Si3N4). The insulating layer 51 may be made of an insulating resin sheet in addition to ceramics. The insulating layer 51 has a rectangular shape when viewed in the thickness direction z.

[0071] The first metal layer 52 is laminated on the z1 side of the insulating layer 51 in the thickness direction z. The constituent material of the first metal layer 52 is not particularly limited and may include, for example, copper. The constituent material of the first metal layer 52 may include aluminum instead of copper. The first metal layer 52 is bonded to the first back surface 112 (die pad portion 11) via a bonding material 67. The bonding material 67 may be conductive or insulating, and may be, for example, solder.

[0072] The second metal layer 53 is laminated on the z2 side of the insulating layer 51 in the thickness direction z. The constituent material of the second metal layer 53 is the same as the constituent material of the first metal layer 52. The second metal layer 53 has a second heat dissipation surface 531. The second heat dissipation surface 531 faces the z2 side in the thickness direction z. The second heat dissipation surface 531 is exposed from the resin back surface 72 of the sealing resin 7. In the illustrated example, the second heat dissipation surface 531 is flush with the resin back surface 72.

[0073] The insulating layer 51, the first metal layer 52, and the second metal layer 53 each have a rectangular shape when viewed in the thickness direction z. The insulating layer 51 is larger in size in a plan view (when viewed in the thickness direction z) than the first metal layer 52 and the second metal layer 53. The insulating layer 51 overlaps the first metal layer 52, the second metal layer 53, and the die pad portion 11 (first back surface 112) when viewed in the thickness direction z. The thermal conductivity of the heat sink 5 (each of the insulating layer 51, the first metal layer 52, and the second metal layer 53) is higher than the thermal conductivity of the sealing resin 7.

[0074] The semiconductor device A21 of this modified example achieves the same effects as the semiconductor device A20. The semiconductor device A21 also includes a heat sink 5. The heat sink 5 is fixed to the first back surface 112 (the surface facing the z2 side in the thickness direction z) of the die pad portion 11. The heat sink 5 has a second heat sink surface 531 facing the z2 side in the thickness direction z, and the second heat sink surface 531 is exposed from the resin back surface 72 of the sealing resin 7. The thermal conductivity of the heat sink 5 is higher than that of the sealing resin 7. This configuration allows heat generated in the semiconductor element 2 to be dissipated from the second heat sink surface 531 via the die pad portion 11 and the heat sink 5. The heat sink 5 also includes an insulating layer 51 that overlaps the die pad portion 11 when viewed from the z1 side in the thickness direction z. The semiconductor device A21 including the heat sink 5 described above can achieve improved heat dissipation and improved voltage resistance.

[0075] The semiconductor device according to the present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the semiconductor device according to the present disclosure can be freely modified in various ways.

[0076] The present disclosure includes configurations related to the following notes. Note 1. A semiconductor device comprising: a first lead including a die pad portion having a first main surface facing one side in a thickness direction and a first back surface facing the other side in the thickness direction; a semiconductor element supported on the first main surface; a conductive portion arranged on one side of the semiconductor element in the thickness direction and conductively joined to the semiconductor element; and a sealing resin covering at least a portion of the die pad portion and the semiconductor element, wherein the conductive portion has a conductive main surface facing one side in the thickness direction, and the sealing resin has a resin main surface facing one side in the thickness direction, a resin back surface spaced from the resin main surface to the other side in the thickness direction and facing the other side in the thickness direction, and a recess recessed from the resin main surface to the other side in the thickness direction, the recess being in contact with the conductive main surface, and at least a portion of the conductive main surface being exposed from the sealing resin. Note 2. The semiconductor device according to Appendix 1, further comprising a heat dissipation portion filled in the recess and having a thermal conductivity higher than that of the sealing resin. Appendix 3. The semiconductor device according to Appendix 2, wherein the heat dissipation portion is formed by metal plating laminated on the conductive principal surface. Appendix 4. The semiconductor device according to Appendix 2, wherein the heat dissipation portion is formed by a thermally conductive material. Appendix 5. The semiconductor device according to Appendix 4, wherein the entire conductive principal surface is exposed from the sealing resin, and the recess is annular in shape surrounding the conductive principal surface when viewed in the thickness direction, and has a recess bottom surface facing one side in the thickness direction. Appendix 6. The semiconductor device according to Appendix 5, wherein the recess bottom surface is flush with the conductive principal surface or is located on the other side of the conductive principal surface in the thickness direction. Appendix 7. The semiconductor device according to any of Appendixes 1 to 6, wherein the heat dissipation portion has a first heat dissipation surface facing one side in the thickness direction, and the first heat dissipation surface is flush with the resin principal surface or is located on one side of the resin principal surface in the thickness direction. Supplementary Note 8: The semiconductor device according to any one of Supplementary Notes 1 to 7, wherein the conductive portion is configured by a metal plate material. Supplementary Note 9: The semiconductor device according to any one of Supplementary Notes 1 to 8, wherein the first rear surface is exposed from the resin rear surface.Appendix 10. The semiconductor device according to any one of Appendixes 1 to 9, further comprising a heat sink fixed to the first back surface and having a thermal conductivity higher than that of the sealing resin, wherein the heat sink has a second heat sink surface facing the other side in the thickness direction, and the second heat sink surface is exposed from the resin back surface. Appendix 11. The semiconductor device according to Appendix 10, wherein the heat sink includes an insulating layer overlapping the die pad portion when viewed in the thickness direction. Appendix 12. The semiconductor device according to Appendix 11, wherein the heat sink includes the insulating layer, a first metal layer stacked on one side of the insulating layer in the thickness direction, and a second metal layer stacked on the other side of the insulating layer in the thickness direction, wherein the first metal layer is bonded to the first back surface, and the second metal layer has the second heat sink surface. Appendix 13. The semiconductor device according to any one of Appendixes 10 to 12, wherein the second heat sink surface is flush with the resin back surface. Appendix 14. The semiconductor device according to any one of Supplementary Notes 1 to 13, wherein the semiconductor element is a switching element.Supplementary Note 15. The semiconductor device according to Supplementary Note 14, wherein the semiconductor element has a main surface facing one side in the thickness direction, a back surface facing the other side in the thickness direction, a source electrode and a gate electrode disposed on the main surface, and a drain electrode disposed on the back surface, the drain electrode being conductively joined to the first main surface, and the conductive portion being conductively joined to the source electrode.Supplementary Note 16. A method for manufacturing a semiconductor device comprising: a first lead including a die pad portion having a first main surface facing one side in a thickness direction and a first back surface facing the other side in the thickness direction, a semiconductor element supported on the first main surface, a conductive portion arranged on one side of the semiconductor element in the thickness direction and conductively joined to the semiconductor element, and a sealing resin covering at least a portion of the die pad portion and the semiconductor element, wherein the conductive portion has a conductive main surface facing one side in the thickness direction, and the sealing resin has a resin main surface facing one side in the thickness direction, and the method comprises the step of irradiating the resin main surface with a laser to form a recess exposing at least a portion of the conductive main surface.Supplementary Note 17. A method for manufacturing a semiconductor device according to Supplementary Note 16, further comprising the step of filling the recess with a heat dissipation portion.

[0077] A10, A11, A12, A20, A21: semiconductor device 1A: first lead 1B: second lead 1C: third lead 11: die pad portion 111: first main surface 112: first back surface 12, 14, 17: terminal portion 121, 141, 171: back surface mounting portion 13, 16: pad portion 15, 18: bending portion 19: metal layer 2: semiconductor element 20: element body 201: element main surface 202: element back surface 21: source electrode 22: drain electrode 23: gate electrode 3: conductive member 31: conductive portion 311: conductive main surface 32: lead side bonding portion 33: intermediate portion 4: heat dissipation portion 41: first heat dissipation surface 5: heat sink 51: insulating layer 52: first metal layer 53: second metal layer 531: Second heat dissipation surface 61, 62, 63: Conductive bonding material 67: Bonding material 68: Wire 7: Sealing resin 71: Main surface of resin 710: Recess 711: Bottom surface of recess 72: Back surface of resin 73, 74, 75, 76: Side surface of resin 9: Laser

Claims

1. a first lead including a die pad portion having a first main surface facing one side in a thickness direction and a first back surface facing the other side in the thickness direction; a semiconductor element supported on the first main surface; a conductive portion disposed on one side of the semiconductor element in the thickness direction and conductively joined to the semiconductor element; a sealing resin that covers at least a portion of the die pad portion and the semiconductor element, the conductive portion has a conductive main surface facing one side in the thickness direction, the sealing resin has a resin main surface facing one side in the thickness direction, a resin back surface spaced from the resin main surface toward the other side in the thickness direction and facing the other side in the thickness direction, and a recess recessed from the resin main surface toward the other side in the thickness direction, the recess is in contact with the conductive main surface, At least a portion of the conductive main surface is exposed from the sealing resin.

2. The semiconductor device according to claim 1 , further comprising a heat dissipation portion filled in said recess and having a thermal conductivity higher than that of said sealing resin.

3. 3. The semiconductor device according to claim 2, wherein said heat dissipation portion is formed by metal plating laminated on said conductive main surface.

4. The semiconductor device according to claim 2 , wherein said heat dissipation portion is made of a thermally conductive material.

5. the entire conductive main surface is exposed from the sealing resin, 5. The semiconductor device according to claim 4, wherein said recess is annular in shape surrounding said conductive main surface when viewed in said thickness direction, and has a bottom surface of said recess facing one side in said thickness direction.

6. The semiconductor device according to claim 5 , wherein the bottom surface of the recess is flush with the main conductive surface or is located on the other side of the main conductive surface in the thickness direction.

7. the heat dissipation portion has a first heat dissipation surface facing one side in the thickness direction, 7. The semiconductor device according to claim 1, wherein the first heat dissipation surface is flush with the resin main surface or is positioned on one side of the resin main surface in the thickness direction.

8. 7. The semiconductor device according to claim 1, wherein said conductive portion is made of a metal plate material.

9. 7. The semiconductor device according to claim 1, wherein said first rear surface is exposed from said resin rear surface.

10. a heat sink fixed to the first rear surface and having a higher thermal conductivity than the sealing resin; the heat sink has a second heat dissipation surface facing the other side in the thickness direction, 7. The semiconductor device according to claim 1, wherein said second heat dissipation surface is exposed from said resin rear surface.

11. The semiconductor device according to claim 10 , wherein the heat sink includes an insulating layer overlapping the die pad portion when viewed in the thickness direction.

12. the heat sink includes the insulating layer, a first metal layer stacked on one side of the insulating layer in the thickness direction, and a second metal layer stacked on the other side of the insulating layer in the thickness direction, the first metal layer is bonded to the first back surface; The semiconductor device according to claim 11 , wherein the second metal layer comprises the second heat dissipation surface.

13. The semiconductor device according to claim 10 , wherein the second heat dissipation surface is flush with the rear surface of the resin.

14. 7. The semiconductor device according to claim 1, wherein the semiconductor element is a switching element.

15. the semiconductor element has a main surface facing one side in the thickness direction, a back surface facing the other side in the thickness direction, a source electrode and a gate electrode disposed on the main surface, and a drain electrode disposed on the back surface; the drain electrode is conductively joined to the first main surface, The semiconductor device according to claim 14 , wherein the conductive portion is conductively joined to the source electrode.

16. A method for manufacturing a semiconductor device comprising: a first lead including a die pad portion having a first main surface facing one side in a thickness direction and a first back surface facing the other side in the thickness direction; a semiconductor element supported on the first main surface; a conductive portion disposed on one side of the semiconductor element in the thickness direction and conductively joined to the semiconductor element; and a sealing resin covering at least a portion of the die pad portion and the semiconductor element, the conductive portion has a conductive main surface facing one side in the thickness direction, the sealing resin has a resin main surface facing one side in the thickness direction, A method for manufacturing a semiconductor device, comprising: forming a recess that exposes at least a portion of the conductive main surface by irradiating the resin main surface with a laser.

17. The method for manufacturing a semiconductor device according to claim 16, further comprising the step of filling the recess with a heat dissipation portion.