Semiconductor device

Abstract

This semiconductor device comprises a conductive support member, a first semiconductor element, a first mounting part, and a second mounting part. The first semiconductor element is disposed on one side of the conductive support member in the thickness direction. The first mounting part and the second mounting part are spaced apart from each other in a direction orthogonal to the thickness direction. The first semiconductor element has: a first element main surface facing the one side in the thickness direction; and a first element rear surface facing the other side in the thickness direction. The first mounting part is disposed on the first element main surface and is electrically connected to the conductive support member. The second mounting part is disposed on the one side of the conductive support member in the thickness direction and is electrically connected to the conductive support member.

Description

Semiconductor Devices

[0001] The present disclosure relates to semiconductor devices.

[0002] Various configurations have been proposed for semiconductor devices including semiconductor elements. Patent Document 1 discloses an example of a conventional semiconductor device. The semiconductor device disclosed in this document includes a semiconductor element, a first lead, a second lead, and a sealing resin. The sealing resin covers the semiconductor element and portions of the first lead and the second lead. The semiconductor element is mounted on the second lead, and one electrode is bonded to the second lead. Another electrode of the semiconductor element is bonded to the first lead, and the first lead has a bent shape. The mounting surface of the first lead and the mounting surface of the second lead are exposed from the back surface of the sealing resin, and the two mounting surfaces are located at the same position in the thickness direction of the semiconductor element. Such conventional semiconductor devices have room for improvement in terms of simplifying their structure and reducing manufacturing costs.

[0003] Japanese Patent Application Laid-Open No. 2017-168553

[0004] An object of the present disclosure is to provide an improved semiconductor device compared to conventional semiconductor devices. In particular, in view of the above-mentioned circumstances, an object of the present disclosure is to provide a semiconductor device that is suitable for simplifying the structure and reducing manufacturing costs.

[0005] A first aspect of the present disclosure provides a semiconductor device comprising a conductive support member, a first semiconductor element disposed on one side of the conductive support member in a thickness direction, and first and second mounting portions spaced apart from each other in a direction perpendicular to the thickness direction. The first semiconductor element has a first element main surface facing one side in the thickness direction and a first element back surface facing the other side in the thickness direction. The first mounting portion is disposed on the first element main surface and is electrically connected to the conductive support member. The second mounting portion is disposed on one side of the conductive support member in the thickness direction and is electrically connected to the conductive support member.

[0006] According to the above configuration, the structure of the semiconductor device can be simplified and the manufacturing costs can be reduced.

[0007] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0008] FIG. 1 is a plan view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a right side view showing a semiconductor device according to the first embodiment of the present disclosure. FIG. 3 is a bottom view showing a semiconductor device according to the first embodiment of the present disclosure. FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. 1. FIG. 5 is a plan view showing a semiconductor device according to a second embodiment of the present disclosure. FIG. 6 is a right side view showing a semiconductor device according to the second embodiment of the present disclosure. FIG. 7 is a bottom view showing a semiconductor device according to the second embodiment of the present disclosure. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 5. FIG. 9 is a cross-sectional view showing a semiconductor device according to a first modified example of the second embodiment. FIG. 10 is a plan view showing a semiconductor device according to a third embodiment of the present disclosure. FIG. 11 is a right side view showing a semiconductor device according to the third embodiment of the present disclosure. FIG. 12 is a bottom view showing a semiconductor device according to the third embodiment of the present disclosure. FIG. 13 is a cross-sectional view taken along line XIII-XIII in FIG. 10. FIG. 14 is a plan view showing a semiconductor device according to a fourth embodiment of the present disclosure. FIG. 15 is a right side view showing a semiconductor device according to the fourth embodiment of the present disclosure. FIG. 16 is a bottom view showing a semiconductor device according to a fourth embodiment of the present disclosure. FIG. 17 is a cross-sectional view taken along line XVII-XVII in FIG. 14. FIG. 18 is a right side view showing a semiconductor device according to a first modified example of the fourth embodiment. FIG. 19 is a bottom view showing a semiconductor device according to a first modified example of the fourth embodiment. FIG. 20 is a cross-sectional view showing a semiconductor device according to a first modified example of the fourth embodiment. FIG. 21 is a plan view showing a semiconductor device according to a second modified example of the fourth embodiment. FIG. 22 is a right side view showing a semiconductor device according to a second modified example of the fourth embodiment. FIG. 23 is a bottom view showing a semiconductor device according to a second modified example of the fourth embodiment. FIG. 24 is a right side view showing a semiconductor device according to a fifth embodiment of the present disclosure. FIG. 25 is a diagram showing a state in which the semiconductor device according to the fifth embodiment of the present disclosure is in use. FIG. 26 is a plan view showing a semiconductor device according to a sixth embodiment of the present disclosure. FIG. 27 is a right side view showing a semiconductor device according to the sixth embodiment of the present disclosure. FIG. 28 is a bottom view showing a semiconductor device according to the sixth embodiment of the present disclosure. FIG. 29 is a cross-sectional view taken along line XXIX-XXIX in FIG. 26.

[0009] Preferred embodiments of the present disclosure will now be described in detail with reference to the drawings.

[0010] Terms such as "first," "second," and "third" in this disclosure are used merely as labels and are not necessarily intended to dictate any ordering of their objects.

[0011] In this disclosure, unless otherwise specified, "a certain object A is formed on a certain object B" and "a certain object A is formed on a certain object B" include "a certain object A is formed directly on a certain object B" and "a certain object A is formed on a certain object B with another object interposed between the certain object A and the certain object B." Similarly, "a certain object A is disposed on a certain object B" and "a certain object A is disposed on a certain object B" include "a certain object A is disposed directly on a certain object B" and "a certain object A is disposed on a certain object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is located on a certain object B" includes "a certain object A is located on a certain object B with a certain object A in contact with the certain object B" and "a certain object A is located on a certain object B with another object interposed between the certain object A and the certain object B." Unless otherwise specified, the phrase "an object A overlaps an object B when viewed in a certain direction" includes "an object A overlaps the entire object B" and "an object A overlaps a part of an object B." In the present disclosure, "a surface A faces in (one side or the other side of) direction B" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is tilted with respect to direction B.

[0012] 1 to 4, a semiconductor device according to a first embodiment of the present disclosure will be described. The semiconductor device A10 of this embodiment includes a conductive support member 10, a first semiconductor element 20, a first mounting portion 41, and a second mounting portion 42. In this embodiment, the semiconductor device A10 further includes a conductive bonding layer 29. The semiconductor device A10 does not include a sealing resin, and each of the elements constituting the semiconductor device A10 (the conductive support member 10, the first semiconductor element 20, the first mounting portion 41, and the second mounting portion 42) is exposed to the outside.

[0013] Fig. 1 is a plan view of the semiconductor device A10. Fig. 2 is a right side view of the semiconductor device A10. Fig. 3 is a bottom view of the semiconductor device A10. Fig. 4 is a cross-sectional view taken along line IV-IV in Fig. 1.

[0014] The semiconductor device A10 shown in these figures is a device that is surface-mounted on a circuit board of various devices. In describing the semiconductor device A10, three mutually orthogonal directions will be referred to as appropriate. For example, the thickness direction of the conductive support member 10 is an example of a "thickness direction" and will be referred to as the "thickness direction z." One direction that is orthogonal to the thickness direction z (the left-right direction in FIGS. 1 to 4) will be referred to as the "first direction x." A direction that is orthogonal to both the thickness direction z and the first direction x (the up-down direction in FIG. 1) will be referred to as the "second direction y." As shown in FIGS. 1 and 2, the semiconductor device A10 has an elongated rectangular shape when viewed in the thickness direction z (in a plan view).

[0015] As shown in FIGS. 2 and 4 , the conductive support member 10 supports the first semiconductor element 20. In the semiconductor device A10, the conductive support member 10 is made of a metal plate material. The conductive support member 10 is made of, for example, copper (Cu) or a copper alloy. The conductive support member 10 is a metal plate material that has been subjected to, for example, a stamping process or a bending process. In this embodiment, the conductive support member 10 includes a first portion 11, a second portion 12, and a third portion 13. As shown in FIGS. 2 and 4 , the first portion 11, the second portion 12, and the third portion 13 are connected by being appropriately bent when viewed in the second direction y.

[0016] The first portion 11 has a first main surface 111 and a first back surface 112. The first main surface 111 faces the z1 side in the thickness direction z and faces the first semiconductor element 20. The first semiconductor element 20 is supported on the first main surface 111 via a conductive bonding layer 29, which will be described later. The first back surface 112 faces the z2 side in the thickness direction z.

[0017] As shown in Figures 2 and 4, the second part 12 is located on the z1 side in the thickness direction z with respect to the first part 11. The second part 12 has a second main surface 121 and a second back surface 122. The second main surface 121 faces the z1 side in the thickness direction z. The second back surface 122 faces the z2 side in the thickness direction z. The second main surface 121 is located on the z1 side in the thickness direction z with respect to the first main surface 111 of the first part 11.

[0018] The third portion 13 is connected to the end of the first portion 11 on the x1 side in the first direction x. The third portion 13 is connected to the x2 side of the second portion 12 in the first direction x. The first portion 11 and the second portion 12 do not overlap in the thickness direction z. In this manner, in this embodiment, the first portion 11, the second portion 12, and the third portion 13 are bent in a so-called step-like manner. The surfaces of each portion of the conductive support member 10 (the first portion 11, the second portion 12, and the third portion 13) may be plated with, for example, tin (Sn). Instead of tin plating, multiple metal platings, for example, nickel (Ni), palladium (Pd), and gold (Au) layered in this order, may be used.

[0019] The first semiconductor element 20 is an element that performs the electrical function of the semiconductor device A10. The type of the first semiconductor element 20 is not particularly limited. In this embodiment, the first semiconductor element 20 is a diode. In this embodiment, the first semiconductor element 20 has a rectangular shape when viewed in the thickness direction z.

[0020] The first semiconductor element 20 has a first element main surface 21, a first element back surface 22, multiple first element side surfaces 23, and an insulating layer 24. The first element main surface 21 and the first element back surface 22 face opposite each other in the thickness direction z. The first element main surface 21 faces the z1 side in the thickness direction z. The first element back surface 22 faces the z2 side in the thickness direction z. In this embodiment, an electrode is formed on each of the first element main surface 21 and the first element back surface 22. For example, the electrode formed on the first element main surface 21 is an anode electrode, and the electrode formed on the first element back surface 22 is a cathode electrode. As shown in FIGS. 2 and 4 , the first element main surface 21 is located at or approximately the same position as the second main surface 121 of the second portion 12 in the thickness direction z.

[0021] The multiple first element side surfaces 23 are connected to both the first element main surface 21 and the first element rear surface 22. Some of the multiple first element side surfaces 23 face the x1 side and the x2 side in the first direction x, while others (not shown) of the multiple first element side surfaces 23 face both sides in the second direction y. The insulating layer 24 covers at least a portion of each of the multiple first element side surfaces 23. The specific configuration of the insulating layer 24 is not particularly limited. In this embodiment, the insulating layer 24 is, for example, a silicon oxide (SiO2) film covering the surface of the first element side surface 23. The insulating layer 24 is formed, for example, by oxidizing the portion corresponding to the first element side surface 23 during the manufacturing process of the first semiconductor element 20. Unlike this embodiment, the first semiconductor element 20 may not have the insulating layer 24.

[0022] 2 and 4 , the conductive bonding layer 29 is interposed between the first element rear surface 22 of the first semiconductor element 20 and the first main surface 111 of the first portion 11 (conductive support member 10), and is in contact with both the first element rear surface 22 and the first main surface 111. This provides electrical continuity between the first element rear surface 22 (first semiconductor element 20) and the first main surface 111 (conductive support member 10). The specific configuration of the conductive bonding layer 29 is not particularly limited, and it may be formed, for example, by firing a paste containing a metal such as silver (Ag). Instead of firing a metal paste, the conductive bonding layer 29 may be formed of an Au—Si eutectic alloy, solder (a metal containing tin and silver), or the like.

[0023] 2 and 4 , the first mounting portion 41 is disposed on the first element main surface 21 of the first semiconductor element 20. The first mounting portion 41 covers at least a portion of the first element main surface 21 and is in contact with the first element main surface 21. The first mounting portion 41 is conductive. As a result, the first mounting portion 41 is electrically connected to the first part 11 (conductive support member 10) via the first semiconductor element 20 and the conductive bonding layer 29.

[0024] The specific configuration of the first mounting portion 41 is not particularly limited, and may be formed, for example, by metal plating. The constituent material of the first mounting portion 41 is not particularly limited, and may include, for example, gold. The first mounting portion 41 is, for example, a metal plating layer in which nickel, palladium, and gold are laminated in this order. The first mounting portion 41 may also be formed by metal paste or solder.

[0025] As shown in FIGS. 2 and 4 , the second mounting portion 42 is disposed on the z1 side in the thickness direction z of the conductive support member 10. The second mounting portion 42 is located on the x1 side in the first direction x relative to the first mounting portion 41. In this embodiment, the second mounting portion 42 is disposed on the second main surface 121 of the second portion 12. The second mounting portion 42 covers a portion of the second main surface 121 and is in contact with the second main surface 121. The second mounting portion 42 is conductive. This allows the second mounting portion 42 to be electrically connected to the second portion 12 (the conductive support member 10). The second mounting portion 42 is located at the same or substantially the same position as the first mounting portion 41 in the thickness direction z.

[0026] The specific configuration of the second mounting portion 42 is not particularly limited, and may be formed, for example, by metal plating. The constituent material of the second mounting portion 42 is not particularly limited, and may include, for example, gold. The second mounting portion 42 is, for example, a metal plating layer in which nickel, palladium, and gold are laminated in this order. The second mounting portion 42 may also be formed by metal paste or solder. When the semiconductor device A10 is mounted on a circuit board, the first mounting portion 41 and the second mounting portion 42 are the portions that are joined to the circuit board.

[0027] Next, the effects of the semiconductor device A10 will be described.

[0028] The semiconductor device A10 includes a conductive support member 10, a first semiconductor element 20 arranged on the z1 side of the conductive support member 10 in the thickness direction z, and a first mounting portion 41 and a second mounting portion 42. The first mounting portion 41 and the second mounting portion 42 are spaced apart from each other in the first direction x. The first semiconductor element 20 has a first element main surface 21 facing the z1 side of the thickness direction z and a first element back surface 22 facing the z2 side of the thickness direction z. The first mounting portion 41 is arranged on the first element main surface 21 and is electrically connected to the conductive support member 10. The second mounting portion 42 is arranged on the z1 side of the conductive support member 10 in the thickness direction z and is electrically connected to the conductive support member 10. With this configuration, the first mounting portion 41 and the second mounting portion 42 are located on the same side of the conductive support member 10 in the thickness direction z (the z1 side of the thickness direction z). In the semiconductor device A10, the conduction path of the first semiconductor element 20 is formed by a single conductive support member 10. This allows the semiconductor device A10 to have a simplified structure and reduce manufacturing costs.

[0029] The conductive support member 10 includes a first portion 11 and a second portion 12. The first portion 11 has a first main surface 111 facing the z1 side in the thickness direction z. The second portion 12 has a second main surface 121 facing the z1 side in the thickness direction z. The second main surface 121 is located on the z1 side of the first main surface 111 in the thickness direction z. The first semiconductor element 20 is disposed on the first main surface 111, and the second mounting portion 42 is disposed on the second main surface 121. With this configuration, the first mounting portion 41 disposed on the first element main surface 21 of the first semiconductor element 20 and the second mounting portion 42 disposed on the second main surface 121 can be aligned in the thickness direction z.

[0030] The conductive support member 10 is made of a metal plate and further includes a third portion 13. The second portion 12 is located on the z1 side of the first portion 11 in the thickness direction z. The third portion 13 connects to the end of the first portion 11 on the x1 side in the first direction x and the end of the second portion 12 on the x2 side in the first direction x. The first portion 11 and the second portion 12 do not overlap in the thickness direction z. The conductive support member 10 having this configuration can be easily formed by bending a metal plate into a stepped shape.

[0031] The semiconductor device A10 does not include a sealing resin, and each of the components constituting the semiconductor device A10 (the conductive support member 10, the first semiconductor element 20, the first mounting portion 41, and the second mounting portion 42) is exposed to the outside. This configuration is preferable for simplifying the structure of the semiconductor device A10. The semiconductor device A10 can be made smaller and have improved heat dissipation properties.

[0032] The first semiconductor element 20 has an insulating layer 24 that covers the first element side surface 23. With this configuration, the first semiconductor element 20 is protected from surrounding moisture and dust, and deterioration of the first semiconductor element 20 can be suppressed.

[0033] Second Embodiment: Figures 5 to 8 show a semiconductor device according to a second embodiment of the present disclosure. Figure 5 is a plan view showing a semiconductor device A20 according to this embodiment. Figure 6 is a right side view of the semiconductor device A20. Figure 7 is a bottom view of the semiconductor device A20. Figure 8 is a cross-sectional view taken along line VIII-VIII in Figure 5. In Figures 5 and subsequent figures, elements that are the same as or similar to those in the above embodiment are designated by the same reference numerals as those in the above embodiment, and redundant explanations will be omitted.

[0034] The semiconductor device A20 differs from the above-described embodiment in the configuration of the conductive support member 10. In the semiconductor device A20, the conductive support member 10 includes a first portion 11, a second portion 12, and a fourth portion 14. As shown in Figures 6 and 8, the first portion 11, the second portion 12, and the fourth portion 14 are appropriately bent and connected when viewed in the second direction y.

[0035] The fourth portion 14 is connected to the end of the first portion 11 on the x1 side in the first direction x. The fourth portion 14 is connected to the end of the second portion 12 on the x1 side in the first direction x. The first portion 11 and the second portion 12 overlap in the thickness direction z. In this manner, in this embodiment, the first portion 11, the second portion 12, and the fourth portion 14 are bent in a folded manner.

[0036] The semiconductor device A20 includes a conductive support member 10, a first semiconductor element 20 arranged on the z1 side of the conductive support member 10 in the thickness direction z, and a first mounting portion 41 and a second mounting portion 42. The first mounting portion 41 and the second mounting portion 42 are spaced apart from each other in the first direction x. The first semiconductor element 20 has a first element main surface 21 facing the z1 side of the thickness direction z and a first element back surface 22 facing the z2 side of the thickness direction z. The first mounting portion 41 is arranged on the first element main surface 21 and is electrically connected to the conductive support member 10. The second mounting portion 42 is arranged on the z1 side of the conductive support member 10 in the thickness direction z and is electrically connected to the conductive support member 10. With this configuration, the first mounting portion 41 and the second mounting portion 42 are located on the same side (the z1 side) of the conductive support member 10 in the thickness direction z. In the semiconductor device A20, the conduction path of the first semiconductor element 20 is formed by a single conductive support member 10. This allows the semiconductor device A20 to have a simplified structure and reduce manufacturing costs.

[0037] The conductive support member 10 includes a first portion 11 and a second portion 12. The first portion 11 has a first main surface 111 facing the z1 side in the thickness direction z. The second portion 12 has a second main surface 121 facing the z1 side in the thickness direction z. The second main surface 121 is located on the z1 side of the first main surface 111 in the thickness direction z. The first semiconductor element 20 is disposed on the first main surface 111, and the second mounting portion 42 is disposed on the second main surface 121. With this configuration, the first mounting portion 41 disposed on the first element main surface 21 of the first semiconductor element 20 and the second mounting portion 42 disposed on the second main surface 121 can be aligned in the thickness direction z.

[0038] The conductive support member 10 is made of a metal plate material and further includes a fourth portion 14. The second portion 12 is located on the z1 side of the first portion 11 in the thickness direction z. The fourth portion 14 connects the end of the first portion 11 on the x1 side in the first direction x and the end of the second portion 12 on the x1 side in the first direction x. The first portion 11 and the second portion 12 overlap in the thickness direction z. The conductive support member 10 configured in this manner can be easily formed by bending a metal plate material in a folded shape. In addition, the semiconductor device A20 exhibits the same effects as the semiconductor device A10 of the above embodiment.

[0039] First Modification of Second Embodiment: Fig. 9 shows a semiconductor device according to a first modification of the second embodiment. Fig. 9 is a cross-sectional view showing a semiconductor device A21 of this modification, and corresponds to the cross section shown in Fig. 8.

[0040] The semiconductor device A21 differs from the semiconductor device A20 in that it further includes an insulating film 50. The insulating film 50 covers the z2 side of the conductive support member 10 in the thickness direction z. In the illustrated example, the insulating film 50 covers the entire or substantially the entire first rear surface 112 of the first portion 11. The constituent material of the insulating film 50 is not particularly limited, and examples thereof include polyimide resin. The semiconductor device A21 can suppress undesired short circuits due to contact with the outside.

[0041] 10 to 13 show a semiconductor device according to a third embodiment of the present disclosure. FIG. 10 is a plan view showing a semiconductor device A30 of this embodiment. FIG. 11 is a right side view of the semiconductor device A30. FIG. 12 is a bottom view of the semiconductor device A30. FIG. 13 is a cross-sectional view taken along line XIII-XIII in FIG. 10.

[0042] The semiconductor device A30 differs from the above embodiment in the configuration of the conductive support member 10. In the semiconductor device A30, the conductive support member 10 includes a first portion 11 and a second portion 12. The second portion 12 is connected to the x1 side of the first portion 11 in the first direction x. The first back surface 112 of the first portion 11 and the second back surface 122 of the second portion 12 are continuously connected. In the conductive support member 10, the first portion 11 has a stepped shape recessed from the second portion 12 toward the z2 side in the thickness direction z. Such a conductive support member 10 in which the first portion 11 is recessed toward the z2 side in the thickness direction z is formed by removing a portion corresponding to the first portion 11 from the z1 side in the thickness direction z in a metal plate material such as a lead frame by half-etching. Unlike the example shown in the figure, the conductive support member 10 having such a stepped shape may also include an insulating substrate such as a ceramic substrate and a conductive layer formed on the z1 side of the insulating substrate in the thickness direction z.

[0043] The semiconductor device A30 includes a conductive support member 10, a first semiconductor element 20 arranged on the z1 side of the conductive support member 10 in the thickness direction z, and a first mounting portion 41 and a second mounting portion 42. The first mounting portion 41 and the second mounting portion 42 are spaced apart from each other in the first direction x. The first semiconductor element 20 has a first element main surface 21 facing the z1 side of the thickness direction z and a first element back surface 22 facing the z2 side of the thickness direction z. The first mounting portion 41 is arranged on the first element main surface 21 and is electrically connected to the conductive support member 10. The second mounting portion 42 is arranged on the z1 side of the conductive support member 10 in the thickness direction z and is electrically connected to the conductive support member 10. With this configuration, the first mounting portion 41 and the second mounting portion 42 are located on the same side of the conductive support member 10 in the thickness direction z (the z1 side of the thickness direction z). In the semiconductor device A30, the conduction path of the first semiconductor element 20 is formed by a single conductive support member 10. This allows the semiconductor device A30 to have a simplified structure and reduce manufacturing costs.

[0044] The conductive support member 10 includes a first portion 11 and a second portion 12. The first portion 11 has a first main surface 111 facing the z1 side in the thickness direction z. The second portion 12 has a second main surface 121 facing the z1 side in the thickness direction z. The second main surface 121 is located on the z1 side of the first main surface 111 in the thickness direction z. The first semiconductor element 20 is disposed on the first main surface 111, and the second mounting portion 42 is disposed on the second main surface 121. This configuration allows the first mounting portion 41 disposed on the first element main surface 21 of the first semiconductor element 20 and the second mounting portion 42 disposed on the second main surface 121 to be aligned in the thickness direction z. Additionally, the semiconductor device A30 achieves the same effects as the semiconductor device A10 within the same configuration as the semiconductor device A10 of the above embodiment.

[0045] 14 to 17 show a semiconductor device according to a fourth embodiment of the present disclosure. FIG. 14 is a plan view showing a semiconductor device A40 of this embodiment. FIG. 15 is a right side view of the semiconductor device A40. FIG. 16 is a bottom view of the semiconductor device A40. FIG. 17 is a cross-sectional view taken along line XVII-XVII in FIG. 14.

[0046] The semiconductor device A40 differs from the above-described embodiments in the configuration of the conductive support member 10. The semiconductor device A40 further includes a second semiconductor element 30 and a conductive bonding layer 39. In the semiconductor device A40, the conductive support member 10 is made of a metal plate, as in the above-described embodiments. In contrast, in this embodiment, the conductive support member 10 is flat and has a constant or approximately constant thickness throughout. The conductive support member 10 has a main surface 101 and a back surface 102. The main surface 101 faces the z1 side in the thickness direction z and faces the first semiconductor element 20 and the second semiconductor element 30. The first semiconductor element 20 and the second semiconductor element 30 are supported by the main surface 101. The back surface 102 faces the z2 side in the thickness direction z.

[0047] The second semiconductor element 30 is an element that performs the electrical function of the semiconductor device A40. The type of the second semiconductor element 30 is not particularly limited. In this embodiment, the second semiconductor element 30 is a diode. In this embodiment, the second semiconductor element 30 has a rectangular shape when viewed in the thickness direction z. The second semiconductor element 30 is arranged on the z1 side of the conductive support member 10 in the thickness direction z. The second semiconductor element 30 is located on the x1 side of the first direction x with respect to the first semiconductor element 20 in the first direction x.

[0048] The second semiconductor element 30 has a second element main surface 31, a second element back surface 32, multiple second element side surfaces 33, and an insulating layer 34. The second element main surface 31 and the second element back surface 32 face opposite each other in the thickness direction z. The second element main surface 31 faces the z1 side in the thickness direction z. The second element back surface 32 faces the z2 side in the thickness direction z. In this embodiment, an electrode is formed on each of the second element main surface 31 and the second element back surface 32. For example, the electrode formed on the second element main surface 31 is a cathode electrode, and the electrode formed on the second element back surface 32 is an anode electrode. As shown in FIGS. 15 and 17 , the second element main surface 31 is located at or approximately the same position as the first element main surface 21 of the first semiconductor element 20 in the thickness direction z.

[0049] The multiple second element side surfaces 33 are connected to both the second element main surface 31 and the second element rear surface 32. Some of the multiple second element side surfaces 33 face the x1 side and the x2 side in the first direction x, while others (not shown) of the multiple second element side surfaces 33 face both sides in the second direction y. An insulating layer 34 covers at least a portion of each of the multiple second element side surfaces 33. The specific configuration of the insulating layer 34 is not particularly limited. In this embodiment, the insulating layer 34 is, for example, a silicon oxide (SiO) film covering the surface of the second element side surface 33. The insulating layer 34 is formed, for example, by oxidizing the portion corresponding to the second element side surface 33 during the manufacturing process of the second semiconductor element 30. Unlike this embodiment, the second semiconductor element 30 may not have the insulating layer 34.

[0050] As shown in FIGS. 15 and 17 , the conductive bonding layer 39 is interposed between the second element rear surface 32 of the second semiconductor element 30 and the main surface 101 of the conductive support member 10, and is in contact with both the second element rear surface 32 and the main surface 101. This provides electrical continuity between the second element rear surface 32 (second semiconductor element 30) and the main surface 101 (conductive support member 10). The conductive bonding layer 29 is interposed between the first element rear surface 22 of the first semiconductor element 20 and the main surface 101 of the conductive support member 10, and is in contact with both the first element rear surface 22 and the main surface 101. This provides electrical continuity between the first element rear surface 22 (first semiconductor element 20) and the main surface 101 (conductive support member 10). The first semiconductor element 20 and the second semiconductor element 30 are connected in series via the conductive support member 10. The specific configuration of the conductive bonding layer 39 is not particularly limited, and it may be formed, for example, by firing a paste containing a metal such as silver. Instead of firing a metal paste, the conductive bonding layer 39 may be made of an Au-Si eutectic alloy, solder (a metal containing tin and silver), or the like.

[0051] 15 and 17 , the second mounting portion 42 is disposed on the second element main surface 31 of the second semiconductor element 30. The second mounting portion 42 covers at least a portion of the second element main surface 31 and is in contact with the second element main surface 31. This provides electrical continuity between the second mounting portion 42 and the conductive support member 10 via the second semiconductor element 30 and the conductive bonding layer 39. The second mounting portion 42 is located at the same or substantially the same position as the first mounting portion 41 in the thickness direction z.

[0052] The semiconductor device A40 includes a conductive support member 10, a first semiconductor element 20 disposed on the z1 side of the conductive support member 10 in the thickness direction z, and a first mounting portion 41 and a second mounting portion 42. The first mounting portion 41 and the second mounting portion 42 are spaced apart from each other in the first direction x. The first semiconductor element 20 has a first element main surface 21 facing the z1 side of the thickness direction z and a first element back surface 22 facing the z2 side of the thickness direction z. The first mounting portion 41 is disposed on the first element main surface 21 and is electrically connected to the conductive support member 10. The second mounting portion 42 is disposed on the z1 side of the conductive support member 10 in the thickness direction z and is electrically connected to the conductive support member 10. With this configuration, the first mounting portion 41 and the second mounting portion 42 are located on the same side (the z1 side) of the conductive support member 10 in the thickness direction z. In the semiconductor device A40, the conduction path of the first semiconductor element 20 is formed by a single conductive support member 10. This allows the semiconductor device A40 to have a simplified structure and reduce manufacturing costs.

[0053] The semiconductor device A40 further includes a second semiconductor element 30. In this embodiment, the first semiconductor element 20 (diode) and the second semiconductor element 30 (diode) are connected in series, which allows for a large voltage drop. In this manner, the semiconductor device A40 achieves desired electrical characteristics different from those of the above embodiment. In addition, the semiconductor device A40 achieves the same effects as the semiconductor device A10 within the same range of configuration as the semiconductor device A10 of the above embodiment.

[0054] First Modification of Fourth Embodiment: Figures 18 to 20 show a semiconductor device according to a first modification of the fourth embodiment. Figure 18 is a right side view showing a semiconductor device A41 of this modification. Figure 19 is a bottom view of the semiconductor device A41. Figure 20 is a cross-sectional view of the semiconductor device A41, corresponding to the cross section shown in Figure 17.

[0055] The semiconductor device A41 differs from the semiconductor device A40 of the above embodiment in the configuration of the conductive support member 10. In the semiconductor device A41, the conductive support member 10 includes an insulating substrate 10A and a conductive layer 10B. The insulating substrate 10A is flat and has a constant or approximately constant thickness. The insulating substrate 10A has a main surface 101 and a back surface 102. The main surface 101 faces the z1 side in the thickness direction z and faces the first semiconductor element 20 and the second semiconductor element 30. The first semiconductor element 20 and the second semiconductor element 30 are supported by the main surface 101. The back surface 102 faces the z2 side in the thickness direction z. The specific configuration of the insulating substrate 10A is not particularly limited, and the insulating substrate 10A is, for example, a ceramic substrate.

[0056] The conductive layer 10B is formed on the main surface 101 of the insulating substrate 10A, which is on the z1 side in the thickness direction z. The conductive layer 10B has a predetermined width in the second direction y and extends in the first direction x. The conductive layer 10B covers most of the main surface 101 of the insulating substrate 10A. The conductive layer 10B is made of a conductive material. The conductive material that constitutes the conductive layer 10B is not particularly limited. Examples of conductive materials for the conductive layer 10B include those containing silver, copper, gold, etc. The method for forming the conductive layer 10B is not limited, and it can be formed, for example, by firing a paste containing these metals.

[0057] 18 and 20 , the conductive bonding layer 29 is interposed between the first element rear surface 22 of the first semiconductor element 20 and the conductive layer 10B, and is in contact with both the first element rear surface 22 and the conductive layer 10B. This provides electrical continuity between the first element rear surface 22 (first semiconductor element 20) and the conductive layer 10B (conductive support member 10). The conductive bonding layer 39 is interposed between the second element rear surface 32 of the second semiconductor element 30 and the conductive layer 10B, and is in contact with both the second element rear surface 32 and the conductive layer 10B. This provides electrical continuity between the second element rear surface 32 (second semiconductor element 30) and the conductive layer 10B (conductive support member 10). The first semiconductor element 20 and the second semiconductor element 30 are connected in series via the conductive layer 10B (conductive support member 10).

[0058] The semiconductor device A41 includes a conductive support member 10, a first semiconductor element 20 disposed on the z1 side of the conductive support member 10 in the thickness direction z, and a first mounting portion 41 and a second mounting portion 42. The first mounting portion 41 and the second mounting portion 42 are spaced apart from each other in the first direction x. The first semiconductor element 20 has a first element main surface 21 facing the z1 side of the thickness direction z and a first element back surface 22 facing the z2 side of the thickness direction z. The first mounting portion 41 is disposed on the first element main surface 21 and is electrically connected to the conductive support member 10. The second mounting portion 42 is disposed on the z1 side of the conductive support member 10 in the thickness direction z and is electrically connected to the conductive support member 10. With this configuration, the first mounting portion 41 and the second mounting portion 42 are located on the same side of the conductive support member 10 in the thickness direction z (the z1 side of the thickness direction z). In the semiconductor device A41, the conduction path of the first semiconductor element 20 is formed by a single conductive support member 10. This allows the semiconductor device A41 to have a simplified structure and reduce manufacturing costs.

[0059] The semiconductor device A41 further includes a second semiconductor element 30. In this modification, the first semiconductor element 20 (diode) and the second semiconductor element 30 (diode) are connected in series, which allows a large voltage drop. This allows the semiconductor device A41 to achieve desired electrical characteristics different from those of the above embodiment. In addition, the semiconductor device A41 achieves the same effects as the semiconductor device A10 within the same range of configuration as the semiconductor device A10 of the above embodiment.

[0060] The conductive support member 10 including the insulating substrate 10A and the conductive layer 10B may be configured as a printed circuit board. When the conductive support member 10 is configured as a printed circuit board, the insulating substrate 10A is, for example, a glass epoxy board, and the conductive layer 10B is a wiring layer formed on the glass epoxy board.

[0061] Second Modification of Fourth Embodiment: Figures 21 to 23 show a semiconductor device according to a second modification of the fourth embodiment. Figure 21 is a plan view showing a semiconductor device A42 of this modification. Figure 22 is a right side view of the semiconductor device A42. Figure 23 is a bottom view of the semiconductor device A42.

[0062] The semiconductor device A42 differs from the semiconductor device A41 in the configuration of the conductive support member 10. The semiconductor device A42 includes two first semiconductor elements 20 and two second semiconductor elements 30. In the semiconductor device A42, the insulating substrate 10A has a larger dimension in the second direction y. The conductive layer 10B is formed in two regions spaced apart from each other in the second direction y. The first semiconductor elements 20 and the second semiconductor elements 30 are arranged corresponding to the conductive layer 10B in each of the two regions. As shown in FIG. 23 , a pair of the first semiconductor elements 20 and the second semiconductor elements 30 on one side in the second direction y are connected in series via the conductive layer 10B (conductive support member 10) formed on one side in the second direction y. Another pair of the first semiconductor elements 20 and the second semiconductor elements 30 on the other side in the second direction y are connected in series via the conductive layer 10B (conductive support member 10) formed on the other side in the second direction y.

[0063] The semiconductor device A42 includes a conductive support member 10, a first semiconductor element 20 disposed on the z1 side of the conductive support member 10 in the thickness direction z, and a first mounting portion 41 and a second mounting portion 42. The first mounting portion 41 and the second mounting portion 42 are spaced apart from each other in the first direction x. The first semiconductor element 20 has a first element main surface 21 facing the z1 side of the thickness direction z and a first element back surface 22 facing the z2 side of the thickness direction z. The first mounting portion 41 is disposed on the first element main surface 21 and is electrically connected to the conductive support member 10. The second mounting portion 42 is disposed on the z1 side of the conductive support member 10 in the thickness direction z and is electrically connected to the conductive support member 10. With this configuration, the first mounting portion 41 and the second mounting portion 42 are located on the same side (the z1 side) of the conductive support member 10 in the thickness direction z. In the semiconductor device A42, the conduction path of the first semiconductor element 20 is formed by a single conductive support member 10. This allows the semiconductor device A42 to have a simplified structure and reduce manufacturing costs.

[0064] The semiconductor device A42 further includes a second semiconductor element 30. In this modification, the first semiconductor element 20 (diode) and the second semiconductor element 30 (diode) are connected in series, allowing for a large voltage drop. In this modification, two sets of the first semiconductor element 20 and the second semiconductor element 30 are provided, and the first semiconductor element 20 and the second semiconductor element 30 of each set are connected in series with each other. This allows the semiconductor device A42 to achieve desired electrical characteristics different from those of the above embodiment. In addition, the semiconductor device A42 achieves the same effects as the semiconductor device A10 within the same range of configuration as the semiconductor device A10 of the above embodiment.

[0065] Fifth Embodiment: Fig. 24 shows a semiconductor device according to a fifth embodiment of the present disclosure. Fig. 24 is a right side view showing a semiconductor device A50 of this embodiment.

[0066] The semiconductor device A50 differs from the semiconductor device A10 of the above embodiment in the configuration of the conductive support member 10. In the semiconductor device A50, the conductive support member 10 is made of a metal plate, as in the above embodiment. In contrast, in this embodiment, the conductive support member 10 is flat and has a constant or approximately constant thickness throughout. The conductive support member 10 has a main surface 101 and a back surface 102. The main surface 101 faces the z1 side in the thickness direction z and faces the first semiconductor element 20. The first semiconductor element 20 is supported by the main surface 101. The back surface 102 faces the z2 side in the thickness direction z. The second mounting portion 42 is disposed on the main surface 101. The second mounting portion 42 is located on the z2 side in the thickness direction z relative to the first mounting portion 41.

[0067] 25 shows the semiconductor device A50 in use, being a right side view of the semiconductor device A50 mounted on a circuit board 91. The first mounting portion 41 and the second mounting portion 42 are each joined to the circuit board 91 via a conductive bonding material 92. The bonding material 92 is, for example, solder. The semiconductor device A50 can be mounted on the circuit board 91 with the conductive support member 10 tilted relative to the circuit board 91.

[0068] The semiconductor device A50 includes a conductive support member 10, a first semiconductor element 20 arranged on the z1 side of the conductive support member 10 in the thickness direction z, and a first mounting portion 41 and a second mounting portion 42. The first mounting portion 41 and the second mounting portion 42 are spaced apart from each other in the first direction x. The first semiconductor element 20 has a first element main surface 21 facing the z1 side of the thickness direction z and a first element back surface 22 facing the z2 side of the thickness direction z. The first mounting portion 41 is arranged on the first element main surface 21 and is electrically connected to the conductive support member 10. The second mounting portion 42 is arranged on the z1 side of the conductive support member 10 in the thickness direction z and is electrically connected to the conductive support member 10. With this configuration, the first mounting portion 41 and the second mounting portion 42 are located on the same side of the conductive support member 10 in the thickness direction z (the z1 side of the thickness direction z). In the semiconductor device A50, the conduction path of the first semiconductor element 20 is formed by a single conductive support member 10. This allows the structure of the semiconductor device A50 to be simplified, and manufacturing costs to be reduced. In addition, the semiconductor device A50 achieves the same effects as the semiconductor device A10 within the same range of configuration as the semiconductor device A10 of the above embodiment.

[0069] Sixth Embodiment: Figures 26 to 29 show a semiconductor device according to a sixth embodiment of the present disclosure. Figure 26 is a plan view showing a semiconductor device A60 of this embodiment. Figure 27 is a right side view of the semiconductor device A60. Figure 28 is a bottom view of the semiconductor device A60. Figure 29 is a cross-sectional view taken along line XXIX-XXIX in Figure 26.

[0070] The semiconductor device A60 differs from the semiconductor device A10 of the above embodiment in that it further includes a sealing resin 60. The sealing resin 60 covers at least a portion of the conductive support member 10, the first semiconductor element 20, and a portion of each of the first mounting portion 41 and the second mounting portion 42. As shown in Figure 29, in the semiconductor device A60, the first semiconductor element 20 does not have an insulating layer 24, and the first element side surface 23 is covered with the sealing resin 60.

[0071] The sealing resin 60 has a resin main surface 61, a resin rear surface 62, a pair of first resin side surfaces 63, and a pair of second resin side surfaces 64. The constituent material of the sealing resin 60 is, for example, a black epoxy resin.

[0072] The resin main surface 61 faces the same side as the first main surface 111 of the conductive support member 10 (first portion 11) in the thickness direction z. The resin main surface 61 faces the z1 side in the thickness direction z. The resin back surface 62 faces the opposite side to the resin main surface 61. The resin back surface 62 faces the z2 side in the thickness direction z. As shown in FIG. 29 , the first mounting portion 41 and the second mounting portion 42 are exposed from the resin main surface 61. In the illustrated example, a mounting surface 411 of the first mounting portion 41 facing the z1 side in the thickness direction z, and a mounting surface 421 of the second mounting portion 42 facing the z2 side in the thickness direction z, are exposed from the resin main surface 61. The mounting surface 411 and the mounting surface 421 are flush with the resin main surface 61.

[0073] The pair of first resin side surfaces 63 are connected to both the resin main surface 61 and the resin back surface 62 and face the first direction x. The pair of first resin side surfaces 63 are spaced apart from each other in the first direction x. As shown in FIG. 29 , in the illustrated example, an end surface 113 of the first portion 11 facing the x2 side in the first direction x is exposed from the first resin side surface 63 facing the x2 side in the first direction x so as to be flush with the first resin side surface 63. The end surface 123 of the second portion 12 facing the x1 side in the first direction x is exposed from the first resin side surface 63 facing the x1 side in the first direction x so as to be flush with the first resin side surface 63. The pair of second resin side surfaces 64 are connected to all of the resin main surface 61, the resin back surface 62, and the pair of first resin side surfaces 63 and face the second direction y. The pair of second resin side surfaces 64 are spaced apart from each other in the second direction y.

[0074] The semiconductor device A60 includes a conductive support member 10, a first semiconductor element 20 arranged on the z1 side of the conductive support member 10 in the thickness direction z, and a first mounting portion 41 and a second mounting portion 42. The first mounting portion 41 and the second mounting portion 42 are spaced apart from each other in the first direction x. The first semiconductor element 20 has a first element main surface 21 facing the z1 side of the thickness direction z and a first element back surface 22 facing the z2 side of the thickness direction z. The first mounting portion 41 is arranged on the first element main surface 21 and is electrically connected to the conductive support member 10. The second mounting portion 42 is arranged on the z1 side of the conductive support member 10 in the thickness direction z and is electrically connected to the conductive support member 10. With this configuration, the first mounting portion 41 and the second mounting portion 42 are located on the same side of the conductive support member 10 in the thickness direction z (the z1 side of the thickness direction z). In the semiconductor device A60, the conduction path of the first semiconductor element 20 is formed by a single conductive support member 10. This allows the semiconductor device A60 to have a simplified structure and reduce manufacturing costs.

[0075] The conductive support member 10 includes a first portion 11 and a second portion 12. The first portion 11 has a first main surface 111 facing the z1 side in the thickness direction z. The second portion 12 has a second main surface 121 facing the z1 side in the thickness direction z. The second main surface 121 is located on the z1 side of the first main surface 111 in the thickness direction z. The first semiconductor element 20 is disposed on the first main surface 111, and the second mounting portion 42 is disposed on the second main surface 121. This configuration allows the first mounting portion 41 disposed on the first element main surface 21 of the first semiconductor element 20 and the second mounting portion 42 disposed on the second main surface 121 to be aligned in the thickness direction z. Additionally, the semiconductor device A60 achieves the same effects as the semiconductor device A10 within the same configuration as the semiconductor device A10 of the above embodiment.

[0076] The semiconductor device according to the present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the semiconductor device according to the present disclosure can be freely modified in various ways.

[0077] In the above embodiment, the second mounting portion 42 is disposed on the surface (second main surface 121 or main surface 101) of the conductive support member 10 facing the z1 side in the thickness direction z, but the present disclosure is not limited to this. When the conductive support member 10 is made of a metal plate or the like, a portion of the conductive support member 10 including the surface facing the z1 side in the thickness direction z may serve as the second mounting portion without providing a separate second mounting portion 42.

[0078] The present disclosure includes embodiments described in the following appendices. Appendix 1. A semiconductor device comprising: a conductive support member; a first semiconductor element arranged on one side in a thickness direction of the conductive support member; and a first mounting portion and a second mounting portion spaced apart from each other in a direction perpendicular to the thickness direction, wherein the first semiconductor element has a first element main surface facing one side in the thickness direction and a first element back surface facing the other side in the thickness direction, the first mounting portion being arranged on the first element main surface and conducting to the conductive support member, and the second mounting portion being arranged on one side of the conductive support member in the thickness direction and conducting to the conductive support member. Appendix 2. The semiconductor device described in Appendix 1, wherein the first semiconductor element has a first element side surface connected to the first element main surface and the first element back surface, and an insulating layer covering at least a portion of the first element side surface. Appendix 3. The semiconductor device according to Supplementary Note 1 or 2, wherein the conductive support member includes a first portion having a first main surface facing one side in the thickness direction and a second portion having a second main surface facing one side in the thickness direction, the second main surface being located on one side in the thickness direction relative to the first main surface, the first semiconductor element being disposed on the first main surface, and the second mounting portion being located on the second main surface. Supplementary Note 4. The semiconductor device according to Supplementary Note 3, wherein the second portion is located on one side in the thickness direction relative to the first portion, and the second mounting portion is located on one side in a first direction perpendicular to the thickness direction relative to the first mounting portion. Supplementary Note 5. The semiconductor device according to Supplementary Note 4, wherein the conductive support member includes a third portion connected to an end of the first portion on one side in the first direction and an end of the second portion on the other side in the first direction, and the first portion and the second portion do not overlap when viewed in the thickness direction. Supplementary Note 6. The semiconductor device according to claim 4, wherein the conductive support member includes a fourth portion connected to an end portion on one side in the first direction of the first portion and an end portion on one side in the first direction of the second portion, and the first portion and the second portion overlap when viewed in the thickness direction. Appendix 7. The semiconductor device according to any one of appendices 3 to 6, wherein the conductive support member is made of a metal plate material.Appendix 8. The semiconductor device according to any one of Appendixes 3 to 7, wherein the conductive support member is made of a material that includes copper. Appendix 9. The semiconductor device according to any one of Appendixes 1 to 3, wherein the conductive support member includes an insulating substrate and a conductive layer formed on one side of the insulating substrate in the thickness direction. Appendix 10. The semiconductor device according to Appendix 9, wherein the insulating substrate is a ceramic substrate. Appendix 11. The semiconductor device according to Appendix 9, wherein the conductive support member is formed of a printed circuit board. Appendix 12. The semiconductor device according to Appendix 1 or 2, further comprising a second semiconductor element arranged on one side of the conductive support member in the thickness direction, wherein the second semiconductor element has a second element main surface facing one side in the thickness direction and a second element back surface facing the other side in the thickness direction, and wherein the second mounting section is arranged on the second element main surface. Appendix 13. The semiconductor device according to any one of Appendixes 1 to 8, wherein the first mounting section and the second mounting section are each made of a material that includes gold. Appendix 14. The semiconductor device according to any one of Supplementary Notes 3 to 8, further comprising a sealing resin that covers at least a portion of the conductive support member and the first semiconductor element, and the first mounting portion and the second mounting portion are exposed from the sealing resin.Supplementary Note 15. The semiconductor device according to any one of Supplementary Notes 1 to 8, further comprising an insulating film that covers the other side of the conductive support member in the thickness direction.

[0079] A10, A20, A21, A30: Semiconductor device A40, A41, A42, A50, A60: Semiconductor device 10: Conductive support member 10A: Insulating substrate 10B: Conductive layer 101: Main surface 102: Reverse surface 11: First part 111: First main surface 112: First reverse surface 113: End surface 12: Second part 121: Second main surface 122: Second reverse surface 123: End surface 13: Third part 14: Fourth part 20: First semiconductor element 21: First element main surface 22: First element reverse surface 23: First element reverse surface 24: Insulating layer 29: Conductive bonding layer 30: Second semiconductor element 31: Second element main surface 32: Second element reverse surface 33: Second element side surface 34: Insulating layer 39: Conductive bonding layer 41: First mounting portion 42: Second mounting portion 411, 421: Mounting surface 50: Insulating film 60: Sealing resin 61: Resin main surface 62: Resin back surface 63: First resin side surface 64: Second resin side surface 91: Circuit board 92: Bonding material

Claims

1. a conductive support member; a first semiconductor element disposed on one side of the conductive support member in a thickness direction; a first mounting portion and a second mounting portion spaced apart from each other in a direction perpendicular to the thickness direction, the first semiconductor element has a first element main surface facing one side in the thickness direction and a first element back surface facing the other side in the thickness direction, the first mounting portion is disposed on the first element main surface and is electrically connected to the conductive support member; The second mounting portion is disposed on one side of the conductive support member in the thickness direction and is electrically connected to the conductive support member.

2. 2 . The semiconductor device according to claim 1 , wherein the first semiconductor element has a first element side surface connected to the first element main surface and the first element back surface, and an insulating layer covering at least a part of the first element side surface.

3. the conductive support member includes a first portion having a first main surface facing one side in the thickness direction and a second portion having a second main surface facing one side in the thickness direction, the second main surface is located on one side in the thickness direction with respect to the first main surface, the first semiconductor element is disposed on the first main surface, The semiconductor device according to claim 1 , wherein the second mounting portion is disposed on the second main surface.

4. the second portion is located on one side in the thickness direction with respect to the first portion, The semiconductor device according to claim 3 , wherein the second mounting portion is located on one side of the first mounting portion in a first direction perpendicular to the thickness direction.

5. the conductive support member includes a third portion connected to an end portion of the first portion on one side in the first direction and an end portion of the second portion on the other side in the first direction, The semiconductor device according to claim 4 , wherein the first portion and the second portion do not overlap when viewed in the thickness direction.

6. the conductive support member includes a fourth portion connected to one end of the first portion in the first direction and one end of the second portion in the first direction, The semiconductor device according to claim 4 , wherein the first portion and the second portion overlap each other when viewed in the thickness direction.

7. 7. The semiconductor device according to claim 3, wherein said conductive support member is made of a metal plate.

8. 8. The semiconductor device according to claim 7, wherein the conductive support member is made of a material containing copper.

9. 4. The semiconductor device according to claim 1, wherein said conductive support member includes an insulating substrate and a conductive layer formed on one side of said insulating substrate in said thickness direction.

10. 10. The semiconductor device according to claim 9, wherein the insulating substrate is a ceramic substrate.

11. 10. The semiconductor device according to claim 9, wherein said conductive support member is formed of a printed circuit board.

12. a second semiconductor element disposed on one side of the conductive support member in the thickness direction; the second semiconductor element has a second element main surface facing one side in the thickness direction and a second element back surface facing the other side in the thickness direction, The semiconductor device according to claim 1 , wherein the second mounting portion is disposed on the second element main surface.

13. 7. The semiconductor device according to claim 1, wherein the first mounting portion and the second mounting portion are each made of a material containing gold.

14. a sealing resin that covers at least a portion of the conductive support member and the first semiconductor element; 7. The semiconductor device according to claim 3, wherein the first mounting portion and the second mounting portion are exposed from the sealing resin.

15. 7. The semiconductor device according to claim 1, further comprising an insulating film covering the other side of said conductive support member in said thickness direction.