Atomic layer deposition device

Abstract

Provided is an atomic layer deposition device capable of forming a compound layer with good productivity even on a substrate having a porous surface. The disclosed device (an atomic layer deposition device) (10) includes: a conveyance part (120); and a deposition unit (200). The deposition unit (200) includes a plurality of supply parts (210) and a plurality of exhaust parts (220). Each of the plurality of supply parts (210) is sandwiched between two adjacent exhaust parts (220). The plurality of supply parts (210) include a plurality of purge gas supply parts (213), first raw material supply parts (211), and second raw material supply parts. The deposition unit (200) has first to third purge regions (PR1 to PR3), a first raw material supply region (MR1), and a second raw material supply region. At least one purge region selected from the group consisting of the first purge region (PR1) to the third purge region (PR3) includes two or more purge gas supply parts.

Description

Atomic layer deposition equipment

[0001] The present disclosure relates to an atomic layer deposition apparatus.

[0002] An atomic layer deposition apparatus can form a compound layer on a substrate by spraying different gases onto the substrate in sequence. Various proposals have been made regarding atomic layer deposition apparatus.

[0003] US Patent Application Publication No. 2013 / 0064977 discloses a method for depositing atomic layers on a substrate using a drum including a deposition head, in which the substrate is transported so as to move around the drum.

[0004] Patent Document 2 (US Patent Application Publication No. 2012 / 0196050) discloses an apparatus that arranges heads on both sides of a substrate and simultaneously deposits atomic layers on both sides of the substrate, and this apparatus uses a gas bearing to keep the distance between the heads and the substrate constant.

[0005] U.S. Patent Application Publication No. 2013 / 0064977 U.S. Patent Application Publication No. 2012 / 0196050

[0006] In film formation by atomic layer deposition, it is necessary for the supplied gas to reach the surface of the substrate. However, when a substrate having a porous portion on its surface is used, various problems may arise in conventional manufacturing methods. One of the objects of the present disclosure is to provide an atomic layer deposition apparatus that can efficiently form a compound layer even on a substrate having a porous portion on its surface.

[0007] One aspect of the present disclosure relates to an atomic layer deposition apparatus for forming a compound layer on a substrate by atomic layer deposition, the atomic layer deposition apparatus including: a transport unit for transporting the substrate in a transport direction; and at least one deposition unit arranged to face the substrate, the deposition unit including a plurality of supply units and a plurality of exhaust units arranged to face the substrate along the transport direction, each of the plurality of supply units being sandwiched between two adjacent exhaust units, the plurality of supply units including a plurality of purge gas supply units for supplying a purge gas, at least one first source supply unit for supplying a first source, and at least one second source supply unit for supplying a second source, the compound layer being formed by repeating a process including supplying the first source to the substrate and supplying the second source to the substrate, the deposition unit including: a first purge region, a second purge region, and a third purge region arranged along the transport direction; a first source supply region arranged between the first purge region and the second purge region; and a second raw material supply region disposed between the second purge region and the third purge region, wherein the first raw material supply region includes the at least one first raw material supply unit, the second raw material supply region includes the at least one second raw material supply unit, and at least one purge region selected from the group consisting of the first purge region, the second purge region, and the third purge region includes two or more of the purge gas supply units.

[0008] According to the atomic layer deposition apparatus of the present disclosure, a compound layer can be formed with good productivity even on a substrate having a porous portion on the surface.

[0009] FIG. 1 is a diagram schematically showing the configuration of an atomic device deposition apparatus according to embodiment 1. FIG. 2 is a diagram schematically showing the configuration of an example of a deposition unit. FIG. 3A is a diagram schematically showing the configuration of another example of a deposition unit. FIG. 3B is a diagram schematically showing the configuration of another example of a deposition unit. FIG. 4 is a diagram schematically showing the configuration of another example of a deposition unit. FIG. 5 is a diagram schematically showing the configuration of another example of a deposition unit.

[0010] The following describes embodiments of the present disclosure using examples, but the present disclosure is not limited to the examples described below. In the following description, specific numerical values ​​and materials may be exemplified, but other numerical values ​​and other materials may be applied as long as the effects of the present disclosure are obtained. In this specification, the term "numerical value A to numerical value B" includes numerical value A and numerical value B and can be read as "numerical value A or greater and numerical value B or less." In the following description, when lower and upper limits of numerical values ​​related to specific physical properties or conditions are exemplified, any of the exemplified lower limits and any of the exemplified upper limits can be arbitrarily combined, as long as the lower limit is not greater than the upper limit. In the following description, when examples of components or methods are listed, only one of the listed examples may be used, or multiple of the listed examples may be used in combination, unless otherwise specified.

[0011] (Atomic Layer Deposition Apparatus) The atomic layer deposition apparatus (ALD apparatus) according to this embodiment may be referred to as "atomic layer deposition apparatus (A)" or "apparatus (A)" hereinafter.

[0012] The apparatus (A) is an atomic layer deposition apparatus for forming a compound layer on a substrate by atomic layer deposition (ALD). The apparatus (A) includes a transport section for transporting the substrate in a transport direction and at least one deposition unit arranged to face the substrate. The deposition unit includes a plurality of supply sections and a plurality of exhaust sections arranged to face the substrate along the transport direction. Each of the plurality of supply sections is sandwiched between two adjacent exhaust sections. The plurality of supply sections include a plurality of purge gas supply sections for supplying a purge gas, at least one first source supply section for supplying a first source, and at least one second source supply section for supplying a second source. The compound layer is formed by repeating a process including supplying the first source to the substrate and supplying the second source to the substrate. The deposition unit has a first purge region, a second purge region, and a third purge region aligned along the transport direction, a first raw material supply region disposed between the first purge region and the second purge region, and a second raw material supply region disposed between the second purge region and the third purge region. The first raw material supply region includes at least one first raw material supply unit. The second raw material supply region includes at least one second raw material supply unit. At least one purge region selected from the group consisting of the first purge region, the second purge region, and the third purge region includes two or more purge gas supply units. Hereinafter, the substrate transport direction may be referred to as the "transport direction D."

[0013] For substrates with porous surfaces, forming a compound layer deep within the porous regions requires that the raw material reach the porous regions and then be purged before the next raw material is supplied. Possible methods for achieving this include slowing the substrate transport speed or increasing the length (length in the substrate transport direction D) of the head that supplies the raw materials (raw material, purge gas). However, slowing the substrate transport speed reduces productivity. On the other hand, lengthening the head lengthens the region where the raw material and purge gas are supplied, while increasing the distance between exhaust sections. The present inventors have found that this results in the substrate being more prone to warping and rippling. Warping and rippling of the substrate can result in unevenly formed compound layers, damage to the substrate, and poor substrate transport.

[0014] As a result of investigation, the present inventors have found that by using the apparatus (A) having the above configuration, a compound layer can be formed with good productivity and uniformity even on a substrate having a porous portion on its surface. The present disclosure is based on this new finding. Note that the apparatus (A) can also be used to form a compound layer on a substrate having no porous portion on its surface. Even in this case, a compound layer can be formed on the substrate with good productivity and uniformity.

[0015] When forming a compound layer in a porous region, purging the supplied raw material is particularly important. In the apparatus (A), at least one purge region selected from the group consisting of the first purge region, the second purge region, and the third purge region includes two or more purge gas supply units. Furthermore, each purge gas supply unit is sandwiched between two adjacent exhaust units. This configuration allows for sufficient purging without making each purge gas supply unit excessively long. Therefore, bending or rippling of the substrate during film formation can be suppressed.

[0016] The second source material may be a source material different from the first source material. The first source material may contain an element that combines with oxygen to form an oxide, and the second source material may contain oxygen. By using these sources, the oxide layer can be formed. The first source material containing an element that combines with oxygen to form an oxide may be referred to as a "precursor" hereinafter. The second source material containing oxygen may be referred to as an "oxidizer" hereinafter. The first source material and the second source material may be supplied to the surface of the substrate in a gaseous (molecular) state or in a plasma state. For example, the precursor may be supplied to the surface of the substrate in a gaseous state.

[0017] As described above, at least one purge region selected from the group consisting of the first purge region, the second purge region, and the third purge region includes two or more purge gas supply units. Hereinafter, the at least one purge region may be referred to as a "purge region (P)." The number of purge gas supply units included in the purge region (P) may be two or more, or three or more, and may be 150 or less, or 100 or less. Herein, one purge gas supply unit means a supply unit that does not include an exhaust unit therebetween. Similarly, with respect to a supply unit other than the purge gas supply unit, one supply unit means a supply unit that does not include an exhaust unit therebetween.

[0018] The pitch at which the exhaust units are arranged (the distance between two adjacent exhaust units) may be different or may be approximately constant. By making the pitch approximately constant, it is possible to particularly suppress bending of the substrate. When the average distance between two adjacent exhaust units is L, the distance between two adjacent exhaust units may be within a range of 0.2L to 5.0L (for example, a range of 0.5L to 2.0L). Note that the distance between two adjacent exhaust units corresponds to the length (length in the transport direction D) of one supply unit sandwiched between them.

[0019] The distance between two adjacent exhaust units may be selected taking into consideration the type of compound layer, the width of the substrate, the surface shape of the substrate, etc. From the viewpoint of suppressing bending of the substrate, the distance between two adjacent exhaust units may be 100 mm or less (e.g., 50 mm or less, 30 mm or less, 20 mm or less, or 10 mm or less). The distance between two adjacent exhaust units may be 1 mm or more, or 3 mm or more, or may be 100 mm or less, 50 mm or less, 30 mm or less, 20 mm or less, or 10 mm or less.

[0020] When forming an oxide layer on a substrate having a porous portion by ALD, it is important to thoroughly purge the precursor and oxidant. When the second source is an oxidant, the third purge region may include two or more purge gas supply units. When the first source is a precursor, the second purge region may include two or more purge gas supply units.

[0021] Each of the first purge region, the second purge region, and the third purge region may include two or more purge gas supply units. This configuration allows for sufficient purging.

[0022] The second purge region is disposed between the first purge region and the third purge region. The first purge region, the second purge region, and the third purge region may be arranged in this order from the upstream side to the downstream side in the transport direction. Alternatively, the first purge region, the second purge region, and the third purge region may be arranged in this order from the downstream side to the upstream side in the transport direction. In either case, a compound layer is formed by repeating a process including supplying the first source material to the substrate and supplying the second source material to the substrate.

[0023] The apparatus (A) may include two or more deposition units arranged in series along the transport direction. Increasing the number of deposition units allows for a thicker compound layer to be formed. In this case, the third purge region of one of two adjacent deposition units and the first purge region of the other of the two adjacent deposition units may or may not share one or more purge gas supply sections and one or more exhaust sections. The number of deposition units included in the apparatus (A) is not particularly limited. The number of deposition units included in the apparatus (A) may be one or more, two or more, or three or more, and may be 30 or less, or 20 or less. The multiple deposition units may be integrated or separate. Increasing the number of deposition units can increase productivity, but increases the cost of the apparatus.

[0024] The number of purge gas supply units included in the third purge region may be greater than the number of purge gas supply units included in the second purge region. Examples of the second source include substances that are prone to physical adsorption and are difficult to purge (e.g., water). By increasing the number of purge gas supply units included in the third purge region after supplying the second source, it becomes possible to sufficiently purge the second source.

[0025] The first raw material supply region may include two or more first raw material supply units. An exhaust unit is present between the two first raw material supply units. Therefore, with this configuration, a sufficient amount of the first raw material can be supplied to the substrate and bending of the substrate can be suppressed. The number of first raw material supply units included in the first raw material supply region is not particularly limited and may be one or more, two or more, three or more, or five or less. Increasing this number can improve productivity, but increases the cost of the device.

[0026] When the first raw material supply region includes two or more first raw material supply units, the first raw material supply region may further include at least one purge gas supply unit. In this case, the purge gas supply unit can be disposed between two adjacent first raw material supply units in the first raw material supply region. This configuration prevents the partial pressure of the first raw material from becoming too high in the first raw material supply region. By supplying the raw material at a partial pressure equal to or lower than the vapor pressure of the raw material, deposition of the raw material and physical adsorption of the raw material onto the substrate can be suppressed. As a result, dense film formation is possible.

[0027] The second raw material supply region may include two or more second raw material supply units. An exhaust unit is present between the two second raw material supply units. Therefore, with this configuration, a sufficient amount of the second raw material can be supplied to the substrate and bending of the substrate can be suppressed. The number of second raw material supply units included in the second raw material supply region is not particularly limited and may be one or more, two or more, three or more, or five or less. Increasing this number can improve productivity, but increases the cost of the device.

[0028] When the second raw material supply region includes two or more second raw material supply units, the second raw material supply region may further include at least one purge gas supply unit. In this case, the purge gas supply unit can be disposed between two adjacent second raw material supply units in the second raw material supply region. This configuration can prevent the partial pressure of the second raw material from becoming too high in the second raw material supply region.

[0029] The apparatus (A) may further include a moving mechanism that moves the deposition unit along the transport direction D. By moving the deposition unit back and forth along the transport direction D and forming a compound layer in the process, it becomes possible to form a thick compound layer with a small number of deposition units.

[0030] The substrate may be a metal foil having a porous portion on its surface. By using the apparatus (A), a compound layer can be formed on a substrate having a porous portion on its surface with good productivity and uniformity. The substrate may also be a substrate (e.g., a metal foil) that does not have a porous portion on its surface.

[0031] In the apparatus (A), a compound layer may be formed on only one side (one main surface) of the substrate during one transfer, or on both sides (both main surfaces) of the substrate during one transfer. When a compound layer is formed on both sides of the substrate, the apparatus (A) may include a deposition unit arranged to face one main surface of the substrate and a deposition unit arranged to face the other main surface of the substrate. Note that the step of forming a compound layer on one side of the substrate may be performed twice during one transfer, thereby forming compound layers on both sides of the substrate. The two compound layers formed on both sides of the substrate may be the same or different.

[0032] The present disclosure provides a substrate having a compound layer formed on its surface by device (A). For example, the present disclosure provides an electrode foil for an electrolytic capacitor and an electrolytic capacitor using the same. The electrode foil may include a metal foil having a porous portion on its surface and a metal oxide layer (dielectric layer) formed on the surface (porous portion). The electrode foil can be used as an electrode foil including an anode foil and a metal oxide layer (dielectric layer) formed on the anode foil. The metal oxide layer is formed by device (A).

[0033] Examples of components of the apparatus (A) are described below. However, the components of the apparatus (A) are not limited to the following examples. Components used in known atomic layer deposition apparatuses may be applied to components other than those characteristic of the apparatus (A).

[0034] (Supply Unit) The supply unit supplies predetermined raw materials (precursor, oxidizer, etc.) and purge gas. The form of the supply unit is not particularly limited, and known supply unit forms may be used. The supply unit may have an outlet for discharging the raw materials. Examples of the outlet include a slit-shaped outlet extending in a direction perpendicular to the transport direction D, an outlet consisting of multiple through-holes, and a nozzle-shaped outlet. The supply unit is connected to a device for supplying the raw materials discharged from the outlet. For example, the first raw material supply unit, the second raw material supply unit, and the purge gas supply unit may be connected to a supply source of the first raw material, a supply source of the second raw material, and a gas cylinder of the purge gas, respectively, via mass flow controllers.

[0035] The oxide layer formed in the apparatus (A) may be an oxide of a single element or an oxide of multiple elements X (complex oxide). That is, examples of oxides formed in the apparatus (A) include composite oxides. A composite oxide contains multiple elements X that combine with oxygen to form a composite oxide. When forming a composite oxide layer in the apparatus (A), a first source material containing multiple elements X may be supplied from a first source material supply unit. In this case, the first source material may contain gases of multiple compounds. Alternatively, the supply unit of the apparatus (A) may include at least one third source material supply unit for supplying a third source material different from the first source material and the second source material. When the first source material and the third source material are precursors and the second source material is an oxidizing agent, the first to third source material supply units may be arranged in the following order: first source material supply unit / second source material supply unit / third source material supply unit / second source material supply unit.

[0036] When the first raw material and the third raw material are precursors and the second raw material is an oxidizing agent, the apparatus (A) may include a region A in which a first raw material supply unit and a second raw material supply unit are arranged in this order, and a region B in which a third raw material supply unit and a second raw material supply unit are arranged in this order. The apparatus (A) may include a plurality of regions A and / or regions B. At least some of the plurality of regions A may be arranged consecutively, such as region A / region A. At least some of the plurality of regions B may be arranged consecutively, such as region B / region B. When the apparatus (A) includes a plurality of regions A and a plurality of regions B, the regions A and B may be arranged alternately, such as region A / region B / region A / region B.

[0037] The complex oxide layer may be formed by repeating a process including supplying a first source to the substrate, supplying a second source to the substrate, and supplying a third source to the substrate, wherein the first source and the third source may be mixed and supplied to the substrate, or may be supplied separately to the substrate.

[0038] (Exhaust section) The exhaust section sucks and removes gases supplied to the substrate that are not used in compound formation and reaction products of gases that have reacted on the substrate. The exhaust section has an exhaust port for sucking these. The shape of the exhaust port is not particularly limited, and the shapes exemplified as the shapes of the discharge port may be used. The exhaust port is connected to an exhaust device.

[0039] (Transportation Section) The transport section uses a mechanism for transporting the substrate. The transport section is not particularly limited, and a known transport mechanism may be used. For example, a transport mechanism used in a manufacturing method called roll-to-roll may be used for the transport section. An example of the transport section includes an unwinding roll that feeds out the wound substrate, a take-up roll that takes up the unwound substrate, and a support section that supports the substrate being transported. A compound layer is formed during transport from the unwinding roll to the take-up roll.

[0040] The support may be a roll, or may include a gas bearing that supports the substrate by ejecting gas toward the substrate, or may be an endless belt that moves with the substrate and supports it.

[0041] (Chamber) The apparatus (A) usually includes a chamber. A deposition unit is disposed in the chamber. The substrate is transported through the chamber, and a compound layer is formed in the chamber. The pressure in the chamber may or may not be reduced. When the pressure in the chamber is reduced, the apparatus (A) includes a pressure reduction device.

[0042] (Other) The apparatus (A) may include a control unit for controlling the devices within the apparatus (A). The control unit may be the same as a control unit used in a known ALD apparatus. The control unit executes a program to perform the control necessary for forming a compound layer. For example, the control unit controls the amount of raw material supplied, the pressure in the chamber, the substrate transport speed, etc. The control unit may be connected to various sensors and various devices. Examples of sensors include a pressure gauge and a thermometer. Examples of devices include a motor, a heater, an electrode, a power supply, a mass flow controller, etc. The motor may be used to transport the substrate or move the deposition unit.

[0043] The apparatus (A) may include a moving mechanism that moves the deposition unit back and forth along the substrate transport direction D. The deposition unit may then be moved to form a compound layer. This configuration allows a thick compound layer to be formed with fewer deposition units. This allows for the miniaturization of the apparatus. The apparatus (A) may include a heating device for heating the substrate or the raw material. The apparatus (A) may include a device for supplying the raw material to the substrate in a predetermined state. For example, the apparatus (A) may include a device (electrode, power supply, etc.) for plasmatizing the raw material.

[0044] Examples of substrates on which a compound layer is formed by the device (A) and examples of the compound layers formed thereon are described below, although the substrates and compound layers are not limited to the following examples.

[0045] (Substrate) The substrate is not particularly limited, but a substrate having a porous portion on its surface is preferably used. For example, the substrate may be a metal foil used as an electrode foil for an electrolytic capacitor. The porous portion on the surface of the metal foil may be formed by a known method. For example, the porous portion may be formed by etching a normal metal foil having a flat surface. The width of the substrate is not limited, and may be 15 mm or more (e.g., 5 cm or more) or 100 cm or less. The length of the substrate is not limited, but a long substrate can be used. The length of the substrate may be 10 m or more (e.g., 30 m or more) or 2000 m or less.

[0046] Metal foils used as electrode foils for electrolytic capacitors typically include a non-porous core and a porous portion formed outside the core. The porous portion is typically formed on both sides (both main surfaces) of the metal foil. However, when only one side of the metal foil is used, the porous portion may be formed on only one side (one main surface) of the metal foil. The thickness of the porous portion is not particularly limited and is selected depending on the application and desired characteristics of the electrolytic capacitor.

[0047] The metal foil used as the electrode foil of an electrolytic capacitor is formed of a metal (first metal). The metal foil is not particularly limited, and any metal foil used as the electrode foil of an electrolytic capacitor can be used. Examples of the first metal include valve metals and alloys containing valve metals. Examples of valve metals include aluminum (Al), tantalum (Ta), niobium (Nb), and titanium (Ti).

[0048] (Compound Layer) The compound constituting the compound layer is not limited, and any compound formed by atomic layer deposition may be used. Examples of compounds include oxides, nitrides, etc. The compound layer may be composed of only one layer made of one type of compound, or may include multiple layers made of different compounds.

[0049] When manufacturing an electrode foil for an electrolytic capacitor, an oxide layer (dielectric layer) may be formed as a compound layer. Examples of elements other than oxygen that constitute the oxide layer include Al, Ta, Nb, Ti, Si, Zr, and Hf. Examples of oxides that constitute the oxide layer include Al, Ta, Nb, Ti, Si, Zr, and Hf. ２ O ３ , Ta ２ O ５ , Nb ２ O ５ , TiO ２ , SiO ２ , ZrO ２ , HfO ２ , ZnO, and composite oxides. Examples of composite oxides include composite oxides of titanium and silicon, and composite oxides of titanium, silicon, and aluminum. In one example of manufacturing electrode foil for an electrolytic capacitor, an aluminum oxide layer (compound layer) is formed on an aluminum foil (substrate).

[0050] The metal elements constituting the metal foil and the elements other than oxygen contained in the oxide layer may be the same or different. Unlike the method of forming an oxide layer by chemical conversion treatment, the ALD method allows the metal elements constituting the metal foil and the metal elements contained in the oxide layer to be different.

[0051] The thickness of the compound layer is selected depending on the purpose. The thickness of the oxide layer (dielectric layer) formed when producing an electrode foil for an electrolytic capacitor may be 1 nm or more, or 5 nm or more, or may be 300 nm or less, or 200 nm or less.

[0052] The precursor (first raw material) used to form the oxide layer is selected depending on the composition of the oxide layer. The precursor is not particularly limited, and organic compounds conventionally used in the ALD method may be used. For example, precursors containing Al include trimethylaluminum ((CH ３ ) ３ Al) may also be used.

[0053] Examples of the oxidizing agent include water, oxygen, ozone, etc. The oxidizing agent may be supplied to the surface of the substrate in the form of plasma using the oxidizing agent as a raw material. The inert gas used for purging is not particularly limited, and known inert gases (e.g., nitrogen gas) can be used.

[0054] An example of an atomic layer deposition apparatus (A) and an example of forming a compound layer using the same will be specifically described below with reference to the drawings. The example described below can be modified based on the above description. In addition, the matters described below may be applied to the above embodiment.

[0055] (Embodiment 1) The configuration of an apparatus (atomic layer deposition apparatus) 10 of embodiment 1 is shown in Figure 1. The apparatus 10 is an example of an apparatus (A). The apparatus 10 includes a chamber 100, a transport section 120, and a deposition unit 200. The deposition unit 200 is disposed within the chamber 100. The transport section 120 includes an unwinding roll 121, a winding roll 122, and a transport roll 123. A long substrate 1 is transported by the transport section 120. Figure 1 shows a transport direction D of the substrate 1 within the chamber 100. The deposition unit 200 is disposed opposite one main surface of the substrate 1. The apparatus 10 may include a mechanism for reciprocating the deposition unit 200 along the transport direction D, as indicated by arrow A. The apparatus 10 may include a heater for heating the substrate 1 or the raw material. The apparatus 10 may also include various sensors, such as a thermometer and a pressure gauge.

[0056] An example of the configuration of the deposition unit 200 is shown in Fig. 2. The deposition unit 200 shown in Fig. 2 includes a plurality of supply parts 210 and a plurality of exhaust parts (exhaust paths) 220. The plurality of supply parts 210 and the plurality of exhaust parts 220 are arranged so as to face the substrate 1 along the transport direction D. Each of the plurality of supply parts 210 is sandwiched between two exhaust parts 220. In other words, the exhaust parts 220 are present on both sides of the supply part 210.

[0057] The deposition unit 200 includes a first raw material supply unit 211, a second raw material supply unit 212, and a purge gas supply unit 213. Each supply unit is connected to a raw material or purge gas supply source. The first raw material is supplied to the substrate 1 through an opening of the first raw material supply unit 211. The second raw material is supplied to the substrate 1 through an opening of the second raw material supply unit 212. The purge gas is supplied to the substrate 1 through an opening of the purge gas supply unit 213. The exhaust unit 220 is connected to an exhaust device and sucks out excess gas and unnecessary reaction products. The substrate 1 that has passed through the deposition unit 200 becomes a substrate 1x on which a compound layer is formed. The deposition unit 200 is also called a deposition head.

[0058] The deposition unit 200 has a first purge region PR1, a second purge region PR2, a third purge region PR3, a first raw material supply region MR1, and a second raw material supply region MR2. These regions are arranged in the following order from upstream to downstream in the transport direction D: first purge region PR1, first raw material supply region MR1, second purge region PR2, second raw material supply region MR2, and third purge region PR3. Each of the first purge region PR1, second purge region PR2, and third purge region PR3 includes two purge gas supply units 213. The first raw material supply region MR1 includes two first raw material supply units 211. The second raw material supply region MR2 includes two second raw material supply units 212.

[0059] An example of forming an oxide layer on a substrate 1 by the apparatus 10 will be described below. Here, a compound layer formed in one deposition unit 200 will be described as an example in which the deposition units 200 do not move.

[0060] When forming an oxide layer, a precursor gas (first raw material), an oxidizing agent (second raw material), and a purge gas are supplied to the substrate 1 from the respective supply parts, and are exhausted from the respective exhaust parts 220 .

[0061] The substrate 1 moves along the transport direction D. The transported substrate 1 (each portion of the substrate 1) is processed in the following order: first purge region PR1, first source supply region MR1, second purge region PR2, second source supply region MR2, and third purge region PR3. Therefore, first, purging is performed in the first purge region PR1. Next, in the first source supply region MR1, a precursor gas (first source) is supplied to the substrate 1 from the first source supply unit 211. Next, purging is performed in the second purge region PR2. Next, in the second source supply region MR2, an oxidizer (second source) is supplied to the substrate 1 from the second source supply unit 212. This forms an oxide layer on the substrate 1. Next, purging is performed in the third purge region PR3. A thick oxide layer can be formed by reciprocating the deposition unit 200 or the substrate 1, or by using multiple deposition units 200.

[0062] As described above, the apparatus 10 may include multiple deposition units 200. The multiple deposition units 200 may be integrated or separate. FIG. 3A schematically shows a partial configuration of an example of an apparatus 10 having multiple deposition units 200. In the example shown in FIG. 3A, two adjacent deposition units 200 do not share the supply section 210 and the exhaust section 220. FIG. 3B schematically shows a partial configuration of another example of an apparatus 10 having multiple deposition units 200. In the example shown in FIG. 3B, the two adjacent deposition units 200 can be considered to share one or more purge gas supply sections 213 and one or more exhaust sections 220. In this case, at least a portion of the third purge region PR3 of the upstream deposition unit 200 becomes at least a portion of the first purge region PR1 of the downstream deposition unit 200.

[0063] The number of purge gas supply units 213 included in each purge region, the number of first raw material supply units 211 included in the first raw material supply region MR1, and the number of second raw material supply units 212 included in the second raw material supply region MR2 are not limited to those shown in the above figure. Examples of deposition units 200 with different numbers are shown in Figures 4 and 5.

[0064] 4, each of the first to third purge regions PR1 to PR3 includes three purge gas supply parts 213. The first raw material supply region MR1 includes one first raw material supply part 211. The second raw material supply region MR2 includes one second raw material supply part 212.

[0065] 5 , the first purge region PR1 includes two purge gas supply parts 213. The second purge region PR2 and the third purge region PR3 each include three purge gas supply parts 213. The first raw material supply region MR1 includes one first raw material supply part 211. The second raw material supply region MR2 includes one second raw material supply part 212.

[0066] In the above embodiment, the purge regions are arranged in the following order: upstream side / first purge region PR1 / second purge region PR2 / third purge region PR3 / downstream side. However, the purge regions may be arranged in the following order: upstream side / third purge region PR3 / second purge region PR2 / first purge region PR1 / downstream side.

[0067] (Additional Note) The above description discloses the following techniques.

[0068] (Technology 1) An atomic layer deposition apparatus for forming a compound layer on a substrate by atomic layer deposition, comprising: a transport section for transporting the substrate in a transport direction; and at least one deposition unit arranged to face the substrate; the deposition unit includes a plurality of supply sections and a plurality of exhaust sections arranged to face the substrate along the transport direction; each of the plurality of supply sections is sandwiched between two adjacent exhaust sections; the plurality of supply sections include a plurality of purge gas supply sections for supplying a purge gas, at least one first source supply section for supplying a first source, and at least one second source supply section for supplying a second source; the compound layer is formed by repeating a process including supplying the first source to the substrate and supplying the second source to the substrate; and the deposition unit has: a first purge region, a second purge region, and a third purge region arranged along the transport direction; a first source supply region arranged between the first purge region and the second purge region; and a second source supply region arranged between the second purge region and the third purge region; the first source supply region includes the at least one first source supply unit; the second source supply region includes the at least one second source supply unit; and at least one purge region selected from the group consisting of the first purge region, the second purge region, and the third purge region includes two or more of the purge gas supply units.

[0069] (Technology 2) The atomic layer deposition apparatus according to Technology 1, wherein the first source contains an element that combines with oxygen to form an oxide, the second source contains oxygen, and the compound layer is a layer of the oxide.

[0070] (Technology 3) The atomic layer deposition apparatus according to Technology 1 or 2, wherein each of the first purge region, the second purge region, and the third purge region includes two or more of the purge gas supply units.

[0071] (Technology 4) The atomic layer deposition apparatus according to any one of Technologies 1 to 3, wherein the first purge region, the second purge region, and the third purge region are arranged in this order from the upstream side to the downstream side in the transport direction.

[0072] (Technology 5) The atomic layer deposition apparatus according to any one of Technologies 1 to 3, wherein the first purge region, the second purge region, and the third purge region are arranged in this order from the downstream side to the upstream side in the transport direction.

[0073] (Technology 6) The atomic layer deposition apparatus according to any one of Technologies 1 to 5, including two or more of the deposition units arranged successively along the transport direction.

[0074] (Technology 7) The atomic layer deposition apparatus according to Technology 6, wherein the third purge region of one of the two adjacent deposition units and the first purge region of the other of the two adjacent deposition units share one or more of the purge gas supply parts and one or more of the exhaust parts.

[0075] (Technology 8) The atomic layer deposition apparatus according to any one of Techniques 1 to 7, wherein the number of the purge gas supply units included in the third purge region is greater than the number of the purge gas supply units included in the second purge region.

[0076] (Technology 9) The atomic layer deposition apparatus according to any one of Technologies 1 to 8, wherein the first source supply region includes two or more of the first source supply parts.

[0077] (Technology 10) The atomic layer deposition apparatus according to Technology 9, wherein the first source supply region further includes at least one of the purge gas supply units, and the purge gas supply unit is disposed between two adjacent first source supply units in the first source supply region.

[0078] (Technology 11) The atomic layer deposition apparatus according to any one of Techniques 1 to 10, wherein the second source supply region includes two or more of the second source supply parts.

[0079] (Technology 12) The atomic layer deposition apparatus according to Technology 11, wherein the second source supply region further includes at least one of the purge gas supply units, and the purge gas supply unit is disposed between two adjacent second source supply units in the second source supply region.

[0080] (Technology 13) The atomic layer deposition apparatus according to any one of Technologies 1 to 12, further comprising a moving mechanism that moves the deposition unit along the transport direction.

[0081] (Technology 14) The atomic layer deposition apparatus according to any one of Techniques 1 to 13, wherein the substrate is a metal foil having a porous portion on its surface.

[0082] The present disclosure can be used in atomic layer deposition apparatuses.

[0083] 1: Substrate 10: Apparatus (atomic layer deposition apparatus) 100: Chamber 120: Transfer section 200: Deposition unit 210: Supply section 211: First raw material supply section 212: Second raw material supply section 213: Purge gas supply section 220: Exhaust section D: Transfer direction MR1: First raw material supply region MR2: Second raw material supply region PR1: First purge region PR2: Second purge region PR3: Third purge region

Claims

1. An atomic layer deposition apparatus for forming a compound layer on a substrate by atomic layer deposition, a transfer section that transfers the substrate in a transfer direction, and a deposition unit that is disposed opposite the substrate, the deposition unit includes a plurality of supply units and a plurality of exhaust units arranged in the transport direction so as to face the substrate, each of the plurality of supply units is sandwiched between two adjacent exhaust units among the plurality of exhaust units; the plurality of supply units include a plurality of purge gas supply units that supply a purge gas, a first raw material supply unit that supplies a first raw material, and a second raw material supply unit that supplies a second raw material; the deposition unit is configured to form the compound layer by repeating a process including supplying the first source material to the substrate and supplying the second source material to the substrate; The deposition unit comprises: a first purge region, a second purge region, and a third purge region aligned along the conveying direction; a first raw material supply region disposed between the first purge region and the second purge region; a second raw material supply region disposed between the second purge region and the third purge region; the first raw material supply region includes the first raw material supply part, the second raw material supply region includes the second raw material supply part, At least one purge region selected from the group consisting of the first purge region, the second purge region, and the third purge region includes two or more of the plurality of purge gas supply units.

2. the first raw material contains an element that combines with oxygen to form an oxide, the second source material contains oxygen, The atomic layer deposition apparatus of claim 1 , wherein the compound layer is a layer of the oxide.

3. The atomic layer deposition apparatus of claim 1 , wherein each of the first purge region, the second purge region, and the third purge region includes two or more of the plurality of purge gas supply units.

4. 3. The atomic layer deposition apparatus according to claim 1, wherein the first purge region, the second purge region, and the third purge region are arranged in this order from the upstream side to the downstream side in the transport direction.

5. 3. The atomic layer deposition apparatus according to claim 1, wherein the first purge region, the second purge region, and the third purge region are arranged in this order from the downstream side to the upstream side in the transport direction.

6. The atomic layer deposition apparatus according to claim 1 or 2, comprising two or more deposition units arranged in succession along the transport direction, each of the two or more deposition units being the deposition unit.

7. An atomic layer deposition apparatus as described in claim 6, wherein the third purge region of one of two adjacent deposition units among the two or more deposition units and the first purge region of the other of two adjacent deposition units among the two or more deposition units share one or more of the plurality of purge gas supply sections and one or more of the plurality of exhaust sections.

8. The atomic layer deposition apparatus according to claim 1 , wherein the number of the purge gas supply units included in the third purge region is greater than the number of the purge gas supply units included in the second purge region.

9. 3. The atomic layer deposition apparatus according to claim 1, wherein the first source supply region includes two or more first source supply units, and each of the two or more first source supply units is the first source supply unit.

10. the first raw material supply region further includes at least one of the plurality of purge gas supply units; 10. The atomic layer deposition apparatus of claim 9, wherein in the first source supply region, at least one of the plurality of purge gas supply units is disposed between two adjacent first source supply units among the two or more first source supply units.

11. 3. The atomic layer deposition apparatus according to claim 1, wherein the second source supply region includes two or more second source supply units, each of the two or more second source supply units being the second source supply unit.

12. the second raw material supply region further includes at least one of the plurality of purge gas supply units; 12. The atomic layer deposition apparatus of claim 11, wherein in the second source supply region, at least one of the plurality of purge gas supply units is disposed between two adjacent second source supply units among the two or more second source supply units.

13. The atomic layer deposition apparatus according to claim 1 , further comprising a moving mechanism that moves the deposition unit along the transport direction.

14. 3. The atomic layer deposition apparatus according to claim 1, wherein the substrate is a metal foil having a porous portion on its surface.