Semiconductor device

Abstract

A semiconductor device according to the present invention includes a first lead on which a semiconductor element is mounted, a plurality of second leads, and a sealing resin. The sealing resin has first resin side surfaces located on both sides in a first direction and second resin side surfaces located on both sides in a second direction. The first lead has first end faces exposed from the first resin side surfaces. The plurality of second leads protrude from the second resin side surfaces in the second direction. The first end faces have first edges located on one side in the thickness direction. The second leads have second edges located on one side in the thickness direction, at portions where the second leads intersect the second resin side surfaces. The first edges are located on the other side in the thickness direction from the second edges.

Description

Semiconductor Devices

[0001] The present disclosure relates to semiconductor devices.

[0002] Various configurations have been proposed for semiconductor devices including semiconductor elements. Patent Document 1 discloses an example of a conventional semiconductor device. The semiconductor device disclosed in this document includes a semiconductor element, a first lead on which the semiconductor element is mounted, multiple second leads, and a sealing resin. The first lead includes a die pad on which the semiconductor element is mounted, and a fixed portion (34, 35) connected to the die pad. The fixed portion (34, 35) includes an inclined portion (343, 353) bent in the z-direction, which is the thickness direction, and a parallel portion (342, 352) connected to the inclined portion. The parallel portion (342, 352) has end faces (341, 351) facing opposite each other in the x-direction (direction perpendicular to the z-direction). The end faces (341, 351) are exposed from two side surfaces of the sealing resin facing the x-direction. Multiple second leads protrude outward in the y-direction from two side surfaces of the sealing resin facing the y-direction. The end faces (341, 351) of the parallel portion and the portion of the second lead 2 intersecting with the sealing resin are located at the same position in the z direction. The first lead and the multiple second leads are formed by a lead frame. The lead frame is deformed by a depression process at the portion connected to the die pad so that the die pad is located below in the z direction. The portion deformed by the depression process corresponds to the inclined portion (343, 353). The sealing resin is formed by transfer molding. When forming the sealing resin, the parallel portion and the corresponding portions of the multiple second leads located at the same position in the z direction are sandwiched between dies from both sides in the z direction, and fluidized resin is injected into the cavity. In the semiconductor device of Patent Document 1, the shape of the bent fixing portion connected to the die pad allows the back surface of the die pad to be exposed from the bottom surface of the sealing resin. This improves the heat dissipation of the semiconductor device.

[0003] In the above configuration, to increase the planar size of the die pad, it is necessary to increase the bending angle of the inclined portions (343, 353), which are the bending portions. However, increasing the bending angle of the inclined portions may cause problems such as cracks or breakage in the inclined portions (lead frame). Furthermore, in the sealing resin, problems such as cracks may occur in the portion between the fixing portion and the resin bottom surface. Therefore, these limitations on increasing the size of the die pad make it difficult to increase the size of the die pad on which a semiconductor element is mounted relative to the package size of the semiconductor device.

[0004] Japanese Patent Application Laid-Open No. 2022-143166

[0005] An object of the present disclosure is to provide an improved semiconductor device compared to conventional semiconductor devices. In particular, in view of the above-mentioned circumstances, an object of the present disclosure is to provide a semiconductor device that suppresses problems with the leads and the sealing resin and is suitable for increasing the size of the portion of the lead where the semiconductor element is mounted.

[0006] A first aspect of the present disclosure provides a semiconductor device comprising: a semiconductor element; a first lead on which the semiconductor element is mounted; a second lead spaced apart from the first lead; and a sealing resin covering the semiconductor element, the first lead, and the plurality of second leads. The semiconductor element is disposed on one side of the first lead in a thickness direction. The sealing resin has a resin main surface facing one side in the thickness direction, a resin back surface facing the other side in the thickness direction, two first resin side surfaces located between the resin main surface and the resin back surface and spaced apart in a first direction perpendicular to the thickness direction, and two second resin side surfaces located between the resin main surface and the resin back surface and spaced apart in a second direction perpendicular to the thickness direction and the first direction. The first lead has a first end surface exposed from one of the two first resin side surfaces. The plurality of second leads include at least one second lead protruding in the second direction from one of the two second resin side surfaces. The first end face has a first edge located on one side in the thickness direction, and the at least one second lead has a second edge located on one side in the thickness direction at a portion intersecting the one second resin side surface, and the first edge is located on the other side in the thickness direction relative to the second edge.

[0007] According to the above configuration, it is possible to reduce problems with the leads and sealing resin, and also to increase the size of the portion of the lead where the semiconductor element is mounted.

[0008] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0009] FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a perspective view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 3 is a plan view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 4 is a front view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 5 is a side view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 6 is a bottom view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 7 is a plan view corresponding to FIG. 3, seen through a sealing resin. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 7. FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 7. FIG. 10 is a plan view showing a main part of an example of a lead frame used in a method for manufacturing a semiconductor device according to a first embodiment of the present disclosure. FIG. 11 is a perspective view illustrating a mold used in the method for manufacturing a semiconductor device according to a first embodiment of the present disclosure. FIG. 12 is a front view illustrating a mold used in the method for manufacturing a semiconductor device according to a first embodiment of the present disclosure. FIG. 13 is a perspective view showing a semiconductor device according to a first modification of the first embodiment. FIG. 14 is a perspective view showing a semiconductor device according to a first modification of the first embodiment. FIG. 15 is a plan view showing a semiconductor device according to a first modified example of the first embodiment, seen through the sealing resin. FIG. 16 is a cross-sectional view taken along line XVI-XVI in FIG. 15. FIG. 17 is a cross-sectional view taken along line XVII-XVII in FIG. 15. FIG. 18 is a perspective view showing a semiconductor device according to a second modified example of the first embodiment. FIG. 19 is a plan view showing a semiconductor device according to a second modified example of the first embodiment. FIG. 20 is a front view showing a semiconductor device according to a second modified example of the first embodiment. FIG. 21 is a side view showing a semiconductor device according to a second modified example of the first embodiment. FIG. 22 is a plan view corresponding to FIG. 19, seen through the sealing resin. FIG. 23 is a cross-sectional view taken along line XXIII-XXIII in FIG. 22. FIG. 24 is a plan view showing a semiconductor device according to a third modified example of the first embodiment, seen through the sealing resin. FIG. 25 is a cross-sectional view taken along line XXV-XXV in FIG. 24. FIG. 26 is a cross-sectional view taken along line XXVI-XXVI in FIG.

[0010] Preferred embodiments of the present disclosure will now be described in detail with reference to the drawings.

[0011] Terms such as "first," "second," and "third" in this disclosure are used merely as labels and are not necessarily intended to dictate any ordering of their objects.

[0012] In this disclosure, unless otherwise specified, "a certain object A is formed on a certain object B" and "a certain object A is formed on a certain object B" include "a certain object A is formed directly on a certain object B" and "a certain object A is formed on a certain object B with another object interposed between the certain object A and the certain object B." Similarly, "a certain object A is disposed on a certain object B" and "a certain object A is disposed on a certain object B" include "a certain object A is disposed directly on a certain object B" and "a certain object A is disposed on a certain object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is located on a certain object B" includes "a certain object A is located on a certain object B with a certain object A in contact with the certain object B" and "a certain object A is located on a certain object B with another object interposed between the certain object A and the certain object B." Furthermore, unless otherwise specified, the phrase "an object A overlaps an object B when viewed in a certain direction" includes "an object A overlaps the entire object B" and "an object A overlaps a part of an object B." Furthermore, in the present disclosure, "a surface A faces in (one side or the other side of) direction B" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is tilted with respect to direction B.

[0013] 1 to 9 show a semiconductor device according to a first embodiment of the present disclosure. The semiconductor device A1 of this embodiment includes a first lead 1, a plurality of second leads 2, a semiconductor element 3, a plurality of wires 4, and a sealing resin 6. The package format of the semiconductor device A1 is a small outline package (SOP). However, the package format of the semiconductor device A1 is not limited to SOP.

[0014] FIG. 1 is a perspective view showing the semiconductor device A1. FIG. 2 is a perspective view showing the semiconductor device A1, showing the semiconductor device A1 upside down. FIG. 3 is a plan view showing the semiconductor device A1. FIG. 4 is a front view showing the semiconductor device A1. FIG. 5 is a side view showing the semiconductor device A1. FIG. 6 is a bottom view showing the semiconductor device A1. FIG. 7 is a plan view showing the semiconductor device A1, showing the sealing resin 6 through the view. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 7. FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 7. In FIG. 7, the sealing resin 6 through the view is shown by an imaginary line (two-dot chain line).

[0015] In the description of the semiconductor device A1, the thickness direction of the semiconductor element 3 is referred to as the "thickness direction z." One direction perpendicular to the thickness direction z (the up-down direction in FIG. 3 ) is referred to as the "first direction x." A direction perpendicular to both the thickness direction z and the first direction x (the left-right direction in FIG. 3 ) is referred to as the "second direction y." As shown in FIG. 3 , the semiconductor device A1 is rectangular (or approximately rectangular) when viewed in the thickness direction z (in a plan view).

[0016] The first lead 1 is a member that supports the semiconductor element 3, and is formed by cutting and bending a metal plate material such as copper (Cu) or a copper alloy. As shown in Figures 1, 2, 4, and 6 to 9, the first lead 1 of this embodiment has a first portion 11 and four second portions 12. The thickness of the first lead 1 is not particularly limited and is, for example, 0.1 mm to 0.5 mm, with an example of a specific dimension being approximately 0.15 mm.

[0017] The first portion 11 is a portion on which the semiconductor element 3 is mounted. The shape of the first portion 11 is not limited in any way, and in the example shown, it is rectangular. The first portion 11 has a first main surface 111 and a first back surface 112. The first main surface 111 is a surface facing the z1 side in the thickness direction z. The first main surface 111 is covered with the sealing resin 6. The first back surface 112 is a surface facing the z2 side in the thickness direction z. The first back surface 112 is exposed from the sealing resin 6. The size of the first portion 11 is not limited in any way, and when it is rectangular, the length of one side is, for example, approximately 1.5 mm to 5.0 mm.

[0018] The four second portions 12 are located on both outer sides of the first portion 11 in the first direction x (on the x1 side and the x2 side in the first direction x). Specifically, of the four second portions 12, two second portions 12 are located on the x1 side of the first portion 11 in the first direction x, and the other two second portions 12 are located on the x2 side of the first portion 11 in the first direction x. Each of the four second portions 12 is connected to the first portion 11. The two second portions 12 located on the x1 side of the first portion 11 in the first direction x are spaced apart from each other in the second direction y and are connected to the vicinity of both ends of the first portion 11 in the second direction y. The two second portions 12 located on the x2 side of the first portion 11 in the first direction x are spaced apart from each other in the second direction y and are connected to the vicinity of both ends of the first portion 11 in the second direction y. The shape of the second portion 12 is not limited in any way, and in the illustrated example, the second portion 12 has a shape in which the dimension (width) in the second direction y is constant (or approximately constant). The dimension of the second portion 12 in the second direction y is not limited in any way, and is, for example, about 0.2 mm. The second portion 12 has a second main surface 121, a second back surface 122, and a first end surface 123.

[0019] The second main surface 121 is a surface facing the z1 side in the thickness direction z. The second main surface 121 is covered with the sealing resin 6. The second back surface 122 is a surface facing the z2 side in the thickness direction z. The second back surface 122 is exposed from the sealing resin 6. The first end surface 123 is a surface facing outward in the first direction x. The first end surface 123 is connected to the second main surface 121 and the second back surface 122, and is exposed from the sealing resin 6 (a first resin side surface 63 described below).

[0020] 2 , 4 , 7 , and 8 , the second portion 12 is located at the same position as the first portion 11 in the thickness direction z. More specifically, the second main surface 121 is located at the same position as the first main surface 111 of the first portion 11 in the thickness direction z, and is continuously connected to the first main surface 111. The second back surface 122 is located at the same position as the first back surface 112 of the first portion 11 in the thickness direction z, and is continuously connected to the first back surface 112.

[0021] Unlike the illustrated example, the first lead 1 may have, for example, two second portions 12. When the first lead 1 has two second portions 12, one second portion 12 is located on the x1 side of the first portion 11 in the first direction x, and the other second portion 12 is located on the x2 side of the first direction x of the first portion 11. In this case, each of the two second portions 12 is connected to the center of the first portion 11 in the second direction y.

[0022] The second leads 2 are used as terminals for mounting the semiconductor device A1 on a wiring board or the like, and are electrically connected to the semiconductor element 3. The second leads 2 are formed, for example, by cutting and bending a metal plate material such as copper or a copper alloy. As shown in FIGS. 1 to 9 , the second leads 2 are spaced apart from the first portion 11 in the second direction y. The second leads 2 are arranged on both sides of the first portion 11 (first lead 1) in the second direction y (on the y1 side of the second direction y and the y2 side of the second direction y). The second leads 2 are spaced apart in the first direction x, and in this embodiment, are arranged at equal intervals along the first direction x. The second leads 2 of this embodiment have a lead portion 21 and a terminal portion 22. The thickness of the second lead 2 is not particularly limited and is, for example, 0.1 mm to 0.5 mm. An example of a specific dimension is approximately 0.15 mm.

[0023] The lead portion 21 is located on the z1 side in the thickness direction z relative to the first portion 11 in the thickness direction z. The lead portion 21 has a third main surface 211 and a third back surface 212. The third main surface 211 is a surface facing the z1 side in the thickness direction z. The third back surface 212 is a surface facing the z2 side in the thickness direction z. The third main surface 211 is located on the z1 side in the thickness direction z relative to the first main surface 111 and the second main surface 121 in the thickness direction z. The third back surface 212 is located on the z1 side in the thickness direction z relative to the first back surface 112 in the thickness direction z.

[0024] In this embodiment, the lead portion 21 has a pad portion 213 and a strip portion 214. The pad portion 213 is a portion to which the wire 4 is bonded. The strip portion 214 is connected to the pad portion 213 on the opposite side to the first portion 11 in the second direction y. The dimension of the pad portion 213 in the first direction x is larger than the dimension of the strip portion 214 in the first direction x. An example of the dimension of the strip portion 214 in the first direction x is approximately 0.2 mm. In the lead portion 21, a portion of the strip portion 214 and the pad portion 213 are covered with the sealing resin 6, and the other portion of the strip portion 214 is exposed from the sealing resin 6 (a second resin side surface 64 described below).

[0025] The terminal portion 22 is connected to the end of the lead portion 21 that is farthest from the first portion 11 in the second direction y and is located outside the lead portion 21 in the second direction y. In a plan view, the terminal portion 22 has a rectangular shape with the second direction y as its longitudinal direction. As shown in FIGS. 4 and 9 , the terminal portion 22 is bent in a gull-wing shape when viewed in the first direction x. The terminal portion 22 is located on the z2 side of the lead portion 21 in the thickness direction z in the thickness direction z. The tip portion of the terminal portion 22 is a portion that is bonded to a wiring board or the like when mounted on the wiring board or the like. An example of the dimension of the terminal portion 22 in the first direction x is approximately 0.2 mm. The first lead 1 and the plurality of second leads 2 described above are formed from a lead frame LF (see FIG. 10 ) described later.

[0026] The semiconductor element 3 is an element that performs a major electrical function in the semiconductor device A1. Specific examples of the semiconductor element 3 are not limited in any way, and include, for example, an LSI (Large Scale Integration) or an IC (Integrated Circuit). The specific shape and size of the semiconductor element 3 are not limited in any way, and in this embodiment, as shown in FIG. 7 , the semiconductor element 3 has, for example, a rectangular shape that is smaller than the first portion 11 when viewed in the thickness direction z. As shown in FIGS. 8 and 9 , the semiconductor element 3 has an element main surface 31 and an element back surface 32. The element main surface 31 is a surface facing the z1 side in the thickness direction z. The element back surface 32 is a surface facing the z2 side in the thickness direction z.

[0027] A plurality of electrode pads 311 are provided on the element principal surface 31. The plurality of electrode pads 311 are arranged, for example, in two rows on the element principal surface 31 along the first direction x. The element rear surface 32 faces the first principal surface 111 of the first portion 11 and is bonded to the first principal surface 111 by a bonding material 39. As a result, the semiconductor element 3 is supported on the first principal surface 111 via the bonding material 39. The bonding material 39 may be a conductive bonding material such as solder or silver (Ag) paste, or an insulating bonding material such as an epoxy adhesive.

[0028] The plurality of wires 4 electrically connect the semiconductor element 3 and the plurality of second leads 2. As shown in Fig. 7, the plurality of wires 4 are individually bonded to the plurality of electrode pads 311 of the semiconductor element 3 and the pad portions 213 of the lead portions 21 of the plurality of second leads 2. The wires 4 are made of, for example, gold (Au), aluminum (Al), copper, or the like, and are made of gold in this embodiment.

[0029] The sealing resin 6 covers a portion of the first lead 1, a portion of each of the second leads 2, the semiconductor element 3, and the wires 4. The sealing resin 6 is made of an insulating resin, such as a black epoxy resin containing a filler. As shown in FIGS. 1 to 9 , the sealing resin 6 of this embodiment has a resin main surface 61, a resin back surface 62, two first resin side surfaces 63, and two second resin side surfaces 64.

[0030] The resin main surface 61 is a surface facing the z1 side in the thickness direction z. The resin back surface 62 is a surface facing the z2 side in the thickness direction z. In this embodiment, the resin main surface 61 is rectangular. Furthermore, the first back surface 112 of the first portion 11 and the second back surfaces 122 of each of the four second portions 12 are exposed from the resin back surface 62. The outer edge of the resin back surface 62 is rectangular, and the area ratio of the first back surface 112 to the area enclosed by the outer edge of the resin back surface 62 is, for example, 60% or more and 85% or less.

[0031] The two second resin side surfaces 64 are located between the resin main surface 61 and the resin back surface 62, and on both sides in the second direction y (the y1 side and the y2 side in the second direction y). Each second resin side surface 64 in this embodiment has a first region 641, a second region 642, and a third region 643.

[0032] 4, 5, and 9, the first region 641 is connected to the resin main surface 61 and is located between the resin main surface 61 and the third main surface 211 of the lead portion 21 in the thickness direction z. The first region 641 is inclined with respect to the thickness direction z. The second region 642 is connected to the resin back surface 62 and is located between the third back surface 212 and the resin back surface 62 in the thickness direction z. The second region 642 is inclined with respect to the thickness direction z.

[0033] The third region 643 is a region located between the first region 641 and the second region 642 in the thickness direction z. The third region 643 is also located between the third main surface 211 and the third back surface 212 in the thickness direction z, and a portion of each of the multiple lead portions 21 (a portion of each of the multiple second leads 2) protrudes from this third region 643. As shown in FIGS. 1 , 5 , and 9 , the lead portion 21 (second lead 2) has a second edge 215. The second edge 215 is an edge on the z1 side in the thickness direction z of the lead portion 21 (second lead 2) at a portion that intersects with the second resin side surface 64. The second edge 215 is located at the same position as the third main surface 211 in the thickness direction z.

[0034] The two first resin side surfaces 63 are located between the resin main surface 61 and the resin back surface 62, and are located on both sides in the first direction x (the x1 side and the x2 side in the first direction x). Each of the first resin side surfaces 63 in this embodiment has a fourth region 631 and a fifth region 632.

[0035] 4, 5, and 8, the fourth region 631 is a region that is connected to the resin main surface 61 and is located in the thickness direction z between the resin main surface 61 and the second main surface 121 of the second part 12. The fourth region 631 is inclined with respect to the thickness direction z.

[0036] The fifth region 632 is connected to the fourth region 631 on the z2 side in the thickness direction z and is located between the fourth region 631 and the resin back surface 62 in the thickness direction z. The fifth region 632 is located between the second main surface 121 and the second back surface 122 in the thickness direction z, and each first end surface 123 is exposed from the fifth region 632. As shown in FIGS. 4 and 5 , the fifth region 632 is located on the z2 side in the thickness direction z relative to the third region 643 in the thickness direction z. As shown in FIGS. 1 , 4 , and 8 , the first end surface 123 has a first edge 124. The first edge 124 is an edge on the z1 side of the first end surface 123 in the thickness direction z. The first edge 124 is located at the same position as the second main surface 121 in the thickness direction z. As described above, the third main surface 211 is located on the z1 side in the thickness direction z relative to the first main surface 111 and the second main surface 121. The first edge 124, which is located at the same position in the thickness direction z as the second main surface 121, is located on the z2 side in the thickness direction z relative to the second edge 215, which is located at the same position in the thickness direction z as the third main surface 211.

[0037] FIG. 10 shows a lead frame LF, an example of a component used in manufacturing the semiconductor device A1. The lead frame LF includes a frame F, a lead 10 connected to the frame F, multiple leads 20, and a tie bar 210. Most of the lead 10 and most of the multiple leads 20 are cut from the lead frame LF to become the first lead 1 and multiple second leads 2. The lead 10 has a first portion 11, four second portions 120, and four bent portions 130. The second portion 120 is the portion that will become the second portion 12. The lead frame LF has been deformed by a depression process at the portion connecting the frame F and the second portion 120 so that the first portion 11 and the second portion 120 are located on the z2 side of the frame F in the thickness direction z. The bent portion 130 is a portion deformed by the depression process. When the lead frame LF is cut, it is cut along the boundary between the second portion 120 and the bent portion 130. Of the lead frame LF, the frame F, the bending portion 130, and the tie bar 210 do not constitute the semiconductor device A1. If necessary, a plating layer made of silver, nickel (Ni), or the like may be provided on the first main surface 111 of the first portion 11 and the pad portion 213. After mounting the semiconductor element 3 and bonding the multiple wires 4 to the lead frame LF, the sealing resin 6 is formed.

[0038] The sealing resin 6 is formed by, for example, transfer molding. Figures 11 and 12 show a schematic configuration example of a mold used to form the sealing resin 6. When forming the sealing resin 6, the lead frame LF is housed in a mold 8 having multiple cavities. Here, the mold 8 includes, for example, a lower mold 81 having a cavity 810 and an upper mold 82 having a cavity 820, so that the portions of the lead frame LF covered with the sealing resin 6 in the semiconductor device A1 (the lead 10 and parts of the multiple leads 20) are housed in the cavities 810 and 820.

[0039] The lower mold 81 has a mating surface 811 and a mating surface 812. The mating surface 811 is located corresponding to the first resin side surface 63 of the sealing resin 6, and the mating surface 812 is located corresponding to the second resin side surface 64. The mating surface 811 corresponding to the first resin side surface 63 and the mating surface 812 corresponding to the second resin side surface 64 are located at different positions in the thickness direction z. The mating surface 811 is located on the z2 side of the mating surface 812 in the thickness direction z. The upper mold 82 has a mating surface 821 and a mating surface 822. The mating surface 821 is located corresponding to the first resin side surface 63, and the mating surface 822 is located corresponding to the second resin side surface 64. The mating surface 821 corresponding to the first resin side surface 63 and the mating surface 822 corresponding to the second resin side surface 64 are located at different positions in the thickness direction z. The mating surface 821 is located on the z2 side of the mating surface 822 in the thickness direction z. When the lead frame LF is stored in the mold 8, each second part 120 is sandwiched between the mating surface 811 of the lower mold 81 and the mating surface 821 of the upper mold 82, and each lead 20 is sandwiched between the mating surface 821 of the lower mold 81 and the mating surface 822 of the upper mold 82.

[0040] In the process of forming the sealing resin 6, fluidized resin is poured into the cavities 810, 820 of the mold 8, filling them, and then the resin is solidified. Then, by performing a punching process or the like to separate the lead 10 and the multiple leads 20 (portions that will become the first lead 1 and multiple second leads 2) that were connected to each other by the frame F and tie bars 210, they are appropriately separated. Next, bending is performed on the portions of the multiple second leads 2 that protrude from the sealing resin 6. The semiconductor device A1 is manufactured through the processes described above.

[0041] Next, the effects of the semiconductor device A1 will be described.

[0042] In the semiconductor device A1, the first lead 1 has first end faces 123 located on both sides in the first direction x and exposed from the first resin side faces 63. The first end faces 123 have first edges 124 located on the z1 side in the thickness direction z. Multiple second leads 2 protrude outward in the second direction y from the two second resin side faces 64. The second lead 2 has a second edge 215 located on the z1 side in the thickness direction z at a portion intersecting with the second resin side faces 64. The first edge 124 of the first lead 1 is located on the z2 side in the thickness direction z relative to the second edge 215 in the thickness direction z. With this configuration, the first lead 1 on which the semiconductor element 3 is mounted does not have a bent portion deformed in the thickness direction z by the depression process. This eliminates the inconvenience that would occur if a bent portion were formed in the lead due to the depression process, and allows the size of the portion (first portion 11) on which the semiconductor element 3 is mounted to be relatively large.

[0043] The first lead 1 includes a first portion 11 on which the semiconductor element 3 is mounted, and second portions 12 each connected to the first portion 11 and located on both outer sides of the first portion 11 in the first direction x. The second portions 12 have a first end surface 123. With this configuration, for example, in a lead frame LF, which is a member on which the first lead 1 and multiple second leads 2 are formed, a bent portion 130 formed by depression processing can be provided between the frame F and the second portion 120 connected to both outer sides of the first portion 11 in the first direction x. Therefore, by cutting along the boundary between the second portion 120 and the bent portion 130 and dividing the semiconductor device A1 into individual pieces, it is possible to appropriately manufacture the semiconductor device A1 without a bent member formed by depression processing.

[0044] The first portion 11 has a first main surface 111 facing the z1 side in the thickness direction z and a first back surface 112 facing the z2 side in the thickness direction z, and the semiconductor element 3 is supported by the first main surface 111. The first back surface 112 is exposed from the resin back surface 62. This configuration can improve the heat dissipation of the semiconductor device A1. Furthermore, as described above, in the semiconductor device A1, it is possible to relatively increase the size of the first portion 11 on which the semiconductor element 3 is mounted. This is preferable for improving the heat dissipation of the semiconductor device A1.

[0045] The second portion 12 has a second main surface 121 facing the z1 side in the thickness direction z and a second back surface 122 facing the z2 side in the thickness direction z. The second main surface 121 is located at the same position in the thickness direction z as the first main surface 111 of the first portion 11. The second back surface 122 is located at the same position in the thickness direction z as the first back surface 112 of the first portion 11 and is exposed from the resin back surface 62. This configuration makes it possible to easily form the first portion 11 and the second portion 12 connected thereto. Furthermore, because the second back surface 122, in addition to the first back surface 112, is exposed from the resin back surface 62, the heat dissipation performance of the semiconductor device A1 can be further improved.

[0046] In the sealing resin 6, the second resin side surface 64 has a first region 641, a second region 642, and a third region 643. The first region 641 is connected to the resin main surface 61, and the second region 642 is connected to the resin rear surface 62. The third region 643 is located between the first region 641 and the second region 642 in the thickness direction z. A portion of each of the multiple second leads 2 protrudes from the third region 643. The first resin side surface 63 has a fourth region 631 and a fifth region 632. The fourth region 631 is connected to the resin main surface 61, and the fifth region 632 is connected to the z2 side of the fourth region 631 in the thickness direction z and to the resin rear surface 62. The fifth region 632 is located on the z2 side of the third region 643 in the thickness direction z. The first end surface 123 is exposed from the fifth region 632. The semiconductor device A1 having the sealing resin 6 configured as above can be manufactured by forming the sealing resin 6 by the above-mentioned transfer molding.

[0047] First Modification of First Embodiment: FIGS. 13 to 17 show a semiconductor device according to a first modification of the first embodiment. FIG. 13 is a perspective view of a semiconductor device A11 according to this modification. FIG. 14 is a perspective view of the semiconductor device A11, showing the semiconductor device A11 upside down. FIG. 15 is a plan view of the semiconductor device A11, showing the sealing resin 6 in a transparent state. FIG. 16 is a cross-sectional view taken along line XVI-XVI in FIG. 15. FIG. 17 is a cross-sectional view taken along line XVII-XVII in FIG. 15. In FIG. 15, the transparent sealing resin 6 is indicated by an imaginary line (two-dot chain line). Note that in FIG. 13 and subsequent figures, elements that are the same as or similar to those in the semiconductor device A1 of the above embodiment are designated by the same reference numerals as in the above embodiment, and descriptions thereof will be omitted where appropriate.

[0048] In the semiconductor device A11 of this modification, the configurations of the first portion 11 and the second portion 12 are different from those of the semiconductor device A1 of the above embodiment. In this modification, the first portion 11 has a back surface recess 113. The back surface recess 113 is recessed from the first back surface 112 toward the z1 side in the thickness direction z at the outer periphery of the first portion 11 as viewed in the thickness direction z. This back surface recess 113 is covered with sealing resin 6. The second back surface 122 of the second portion 12 is located on the z1 side in the thickness direction z relative to the first back surface 112 in the thickness direction z. The second back surface 122 is covered with sealing resin 6. The back surface recess 113 and second back surface 122 configured as described above are formed, for example, by half-etching the back surface side of the first lead 1.

[0049] In the semiconductor device A11 of this modified example, the first lead 1 has first end surfaces 123 located on both sides in the first direction x and exposed from the first resin side surface 63. The first end surfaces 123 have first edges 124 located on the z1 side in the thickness direction z. Multiple second leads 2 protrude outward in the second direction y from the two second resin side surfaces 64. The second lead 2 has a second edge 215 located on the z1 side in the thickness direction z at a portion intersecting with the second resin side surface 64. The first edge 124 of the first lead 1 is located on the z2 side in the thickness direction z relative to the second edge 215 in the thickness direction z. With this configuration, the first lead 1 on which the semiconductor element 3 is mounted does not have a bent portion deformed in the thickness direction z by the depression process. This eliminates the inconvenience that would occur if a bent portion were formed in the lead due to the depression process, and allows the size of the portion (first portion 11) on which the semiconductor element 3 is mounted to be relatively large.

[0050] In the semiconductor device A11, the first portion 11 has a back-side recess 113. The back-side recess 113 is recessed from the first back surface 112 toward the z1 side in the thickness direction z at the outer periphery of the first portion 11 as viewed in the thickness direction z, and is covered with sealing resin 6. Furthermore, the second back surface 122 of the second portion 12 is located on the z1 side in the thickness direction z relative to the first back surface 112 and is covered with sealing resin 6. With this configuration, the back-side recess 113 and the second back surface 122 engage with a portion of the sealing resin 6, thereby increasing the holding force of the sealing resin 6 for the first lead 1. Additionally, the semiconductor device A11 achieves the same effects as the semiconductor device A1 within the same configuration as the semiconductor device A1 of the above embodiment.

[0051] Second Modification of First Embodiment: Figures 18 to 23 show a semiconductor device according to a second modification of the first embodiment. Figure 18 is a perspective view showing a semiconductor device A12 of this modification. Figure 19 is a plan view showing the semiconductor device A12. Figure 20 is a front view showing the semiconductor device A12. Figure 21 is a side view showing the semiconductor device A12. Figure 22 is a plan view corresponding to Figure 19, showing the sealing resin 6 through the view. Figure 23 is a cross-sectional view taken along line XXIII-XXIII in Figure 22. In Figure 22, the sealing resin 6 through the view is shown by an imaginary line (two-dot chain line).

[0052] The semiconductor device A12 of this modification differs from the semiconductor device A1 of the above embodiment mainly in the configuration of the two first resin side surfaces 63 of the sealing resin 6. In this modification, the first resin side surfaces 63 are shaped entirely along a plane perpendicular to the first direction x. The first resin side surfaces 63 having such a configuration are formed by cutting with a blade after the sealing resin 6 is formed during the manufacturing process of the semiconductor device A12.

[0053] In the semiconductor device A12 of this modified example, the first lead 1 has first end surfaces 123 located on both sides in the first direction x and exposed from the first resin side surface 63. The first end surfaces 123 have first edges 124 located on the z1 side in the thickness direction z. Multiple second leads 2 protrude outward in the second direction y from the two second resin side surfaces 64. The second lead 2 has a second edge 215 located on the z1 side in the thickness direction z at a portion intersecting with the second resin side surface 64. The first edge 124 of the first lead 1 is located on the z2 side in the thickness direction z relative to the second edge 215 in the thickness direction z. With this configuration, the first lead 1 on which the semiconductor element 3 is mounted does not have a bent portion deformed in the thickness direction z by the depression process. This eliminates the inconvenience that would occur if a bent portion were formed in the lead due to the depression process, and allows the size of the portion (first portion 11) on which the semiconductor element 3 is mounted to be relatively large. In addition, the semiconductor device A12 has the same effects as the semiconductor device A1 within the scope of the same configuration as the semiconductor device A1 of the above embodiment.

[0054] Third Modification of First Embodiment: Figures 24 to 26 show a semiconductor device according to a third modification of the first embodiment. Figure 24 is a plan view showing a semiconductor device A13 of this modification, seen through the sealing resin 6. Figure 25 is a cross-sectional view taken along line XXV-XXV in Figure 24. Figure 26 is a cross-sectional view taken along line XXVI-XXVI in Figure 24. In Figure 24, the visible sealing resin 6 is shown by an imaginary line (two-dot chain line).

[0055] The semiconductor device A13 of this modification differs from the semiconductor device A1 of the above embodiment mainly in the configuration of the second portion 12. In this modification, the second portion 12 has a bent portion 125 and an end portion 126. The end portion 126 has a first end surface 123. The surface of the end portion 126 facing the z2 side in the thickness direction z is exposed from the resin back surface 62. The bent portion 125 is interposed between the end portion 126 and the first portion 11 and is inclined toward the z1 side in the thickness direction z as it approaches the first portion 11. The bent portion 125 and end portion 126 configured as described above are formed, for example, by bending the second portion 12 (first lead 1). The first back surface 112 of the first portion 11 is located on the z1 side in the thickness direction z of the resin back surface 62 and is covered with the sealing resin 6.

[0056] In the semiconductor device A13 of this modified example, the first lead 1 has first end faces 123 located on both sides in the first direction x and exposed from the first resin side faces 63. The first end faces 123 have first edges 124 located on the z1 side in the thickness direction z. Multiple second leads 2 protrude outward in the second direction y from the two second resin side faces 64. The second lead 2 has a second edge 215 located on the z1 side in the thickness direction z at a portion intersecting with the second resin side faces 64. The first edge 124 of the first lead 1 is located on the z2 side in the thickness direction z relative to the second edge 215 in the thickness direction z. With this configuration, the first lead 1 on which the semiconductor element 3 is mounted does not have a bent portion deformed in the thickness direction z by the depression process. This eliminates the inconvenience that would occur if a bent portion were formed in the lead due to the depression process, and allows the size of the portion (first portion 11) on which the semiconductor element 3 is mounted to be relatively large. In addition, the semiconductor device A13 has the same effects as the semiconductor device A1 within the scope of the same configuration as the semiconductor device A1 of the above embodiment.

[0057] The semiconductor device according to the present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the semiconductor device according to the present disclosure can be freely modified in various ways.

[0058] In the above embodiment, the semiconductor device is packaged in an SOP format, and the portions of the second leads 2 exposed from the sealing resin 6 are bent in a gull-wing shape, but the present disclosure is not limited to this. The semiconductor device of the present disclosure can be applied to, for example, a DIP (Dual In-line Package) package format in which the second leads 2 exposed from the sealing resin 6 are bent and extend toward the z2 side in the thickness direction z, or an SOJ (Small Outline J-leaded Package) package format in which the second leads 2 exposed from the sealing resin 6 are bent in a J shape.

[0059] The present disclosure includes embodiments described in the following supplementary notes. Supplementary note 1. A semiconductor device comprising: a semiconductor element; a first lead on which the semiconductor element is mounted; a plurality of second leads spaced apart from the first lead; and a sealing resin covering the semiconductor element, the first lead, and the plurality of second leads, wherein the semiconductor element is disposed on one side of the first lead in a thickness direction, the sealing resin having a resin main surface facing one side in the thickness direction, a resin back surface facing the other side in the thickness direction, two first resin side surfaces located between the resin main surface and the resin back surface and spaced apart in a first direction perpendicular to the thickness direction, and two second resin side surfaces located between the resin main surface and the resin back surface and spaced apart in a second direction perpendicular to the thickness direction and the first direction, the first lead having a first end surface exposed from one of the two first resin side surfaces, and the plurality of second leads having at least one second lead protruding in the second direction from one of the two second resin side surfaces, A semiconductor device in which the first end surface has a first edge located on one side in the thickness direction, and the at least one second lead has a second edge located on one side in the thickness direction at a portion intersecting with the one second resin side surface, and the first edge is located on the other side in the thickness direction relative to the second edge. Appendix 2. The semiconductor device according to Appendix 1, in which the first lead includes a first portion, and the first portion has a first main surface facing one side in the thickness direction and a first back surface facing the other side in the thickness direction, and the semiconductor element is supported on the first main surface. Appendix 3. The semiconductor device according to Appendix 2, in which the first back surface is exposed from the resin back surface. Appendix 4. The semiconductor device according to Appendix 2 or 3, in which the first lead includes a second portion connected to the first portion, and the second portion has the first end surface. Appendix 5. The semiconductor device according to claim 4, wherein the second portion has a second main surface facing one side in the thickness direction and a second back surface facing the other side in the thickness direction, and the second main surface is at the same position as the first main surface in the thickness direction. 6. The semiconductor device according to claim 5, wherein the second back surface is exposed from the resin back surface.Appendix 7. The semiconductor device according to Appendix 6, wherein the second back surface is at the same position as the first back surface in the thickness direction. Appendix 8. The semiconductor device according to Appendix 5, wherein the second back surface is covered with the sealing resin. Appendix 9. The semiconductor device according to Appendix 8, wherein the second back surface is located on one side of the first back surface in the thickness direction. Appendix 10. The semiconductor device according to any of Appendixes 2 to 9, wherein the first portion has an outer periphery as viewed in the thickness direction, and the outer periphery has a back surface recess that is recessed from the first back surface to one side in the thickness direction. Appendix 11. The semiconductor device according to any of Appendixes 2 to 10, wherein the at least one second lead includes a lead portion that is partially covered with the sealing resin and extends along the second direction, and the lead portion has the second edge. Appendix 12. The semiconductor device according to Appendix 11, wherein the lead portion has a third main surface facing one side in the thickness direction and a third back surface facing the other side in the thickness direction, and the third main surface is located on one side in the thickness direction relative to the first main surface. Appendix 13. The semiconductor device according to Appendix 12, further comprising a wire, wherein the semiconductor element has an element main surface facing one side in the thickness direction and an element back surface facing the other side in the thickness direction and facing the first main surface, and the wire is bonded to the element main surface and the third main surface. Appendix 14. The semiconductor device according to any of Appendixes 11 to 13, wherein the at least one second lead includes a terminal portion connected to the lead portion, and the terminal portion is located on the other side in the thickness direction relative to the lead portion. Appendix 15. The semiconductor device according to any one of Supplementary Notes 1 to 14, wherein the one second resin side surface has a first region connected to the resin principal surface, a second region connected to the resin rear surface, and a third region located between the first region and the second region in the thickness direction, and the at least one second lead protrudes from the third region.Supplementary Note 16. The semiconductor device according to Supplementary Note 15, wherein the first resin side surface has a fourth region connected to the resin principal surface and a fifth region connected to the other side of the fourth region in the thickness direction, the fifth region is located on the other side of the third region in the thickness direction, and the first end surface is exposed from the fifth region.Appendix 17. The semiconductor device according to Appendix 15, wherein the two first resin side surfaces are each flat surfaces perpendicular to the first direction.

[0060] A1, A11, A12, A13: semiconductor device 1: first lead 10: lead 11: first portion 111: first main surface 112: first back surface 113: back surface recess 12, 120: second portion 121: second main surface 122: second back surface 123: first end surface 124: first edge 125: bending portion 126: end portion 130: bending portion 2: second lead 20: lead 21: lead portion 210: tie bar 211: third main surface 212: third back surface 213: pad portion 214: strip-shaped portion 215: second edge 22: terminal portion 3: semiconductor element 31: element main surface 311: electrode pad 32: element back surface 39: bonding material 4: wire 6: sealing resin 61: resin main surface 62: Resin rear surface 63: First resin side surface 631: Fourth region 632: Fifth region 64: Second resin side surface 641: First region 642: Second region 643: Third region 8: Mold 81: Lower mold 82: Upper mold 810, 820: Cavity 811, 812, 821, 822: Mating surfaces F: Frame LF: Lead frame

Claims

1. A semiconductor element; a first lead on which the semiconductor element is mounted; a plurality of second leads spaced apart from the first leads; a sealing resin that covers the semiconductor element, the first lead, and the plurality of second leads, the semiconductor element is disposed on one side of the first lead in a thickness direction, the sealing resin has a resin main surface facing one side in the thickness direction, a resin back surface facing the other side in the thickness direction, two first resin side surfaces located between the resin main surface and the resin back surface and spaced apart in a first direction perpendicular to the thickness direction, and two second resin side surfaces located between the resin main surface and the resin back surface and spaced apart in a second direction perpendicular to the thickness direction and the first direction, the first lead has a first end surface exposed from one of the two first resin side surfaces, the plurality of second leads include at least one second lead protruding in the second direction from one of the two second resin side surfaces; the first end surface has a first edge located on one side in the thickness direction, the at least one second lead has a second edge located on one side in the thickness direction at a portion intersecting with the one second resin side surface; The semiconductor device, wherein the first edge is located on the other side of the second edge in the thickness direction.

2. the first lead includes a first portion; the first portion has a first main surface facing one side in the thickness direction and a first back surface facing the other side in the thickness direction, The semiconductor device according to claim 1 , wherein said semiconductor element is supported on said first main surface.

3. The semiconductor device according to claim 2 , wherein said first rear surface is exposed from said resin rear surface.

4. the first lead includes a second portion connected to the first portion; The semiconductor device according to claim 2 , wherein the second portion has the first end surface.

5. the second portion has a second main surface facing one side in the thickness direction and a second back surface facing the other side in the thickness direction, The semiconductor device according to claim 4 , wherein said second main surface is at the same position as said first main surface in said thickness direction.

6. The semiconductor device according to claim 5 , wherein the second rear surface is exposed from the resin rear surface.

7. The semiconductor device according to claim 6 , wherein the second rear surface is at the same position as the first rear surface in the thickness direction.

8. The semiconductor device according to claim 5 , wherein the second back surface is covered with the sealing resin.

9. The semiconductor device according to claim 8 , wherein the second rear surface is located on one side in the thickness direction relative to the first rear surface.

10. 3. The semiconductor device according to claim 2, wherein the first portion has an outer periphery as viewed in the thickness direction, and the outer periphery has a back surface side recess recessed from the first back surface to one side in the thickness direction.

11. the at least one second lead includes a lead portion that is partially covered with the sealing resin and extends along the second direction; The semiconductor device according to claim 2 , wherein the lead portion has the second edge.

12. the lead portion has a third main surface facing one side in the thickness direction and a third back surface facing the other side in the thickness direction; The semiconductor device according to claim 11 , wherein the third main surface is located on one side of the first main surface in the thickness direction.

13. Further comprising a wire; the semiconductor element has an element main surface facing one side in the thickness direction and an element back surface facing the other side in the thickness direction and facing the first main surface, The semiconductor device according to claim 12 , wherein the wire is bonded to the element main surface and the third main surface.

14. the second lead further includes a terminal portion; the terminal portion is connected to the end of the lead portion that is farthest from the first portion in the second direction, 14. The semiconductor device according to claim 11, wherein the terminal portion is located on the other side of the lead portion in the thickness direction.

15. the one second resin side surface has a first region connected to the resin main surface, a second region connected to the resin back surface, and a third region located between the first region and the second region in the thickness direction, 4. The semiconductor device according to claim 1, wherein said at least one second lead protrudes from said third region.

16. the one first resin side surface has a fourth region connected to the resin main surface and a fifth region connected to the other side in the thickness direction of the fourth region, the fifth region is located on the other side in the thickness direction with respect to the third region, The semiconductor device according to claim 15 , wherein the first end face is exposed from the fifth region.

17. The semiconductor device according to claim 15 , wherein the two first resin side surfaces are flat surfaces that are orthogonal to the first direction.